US6339003B1 - Method of fabricating a semiconductor device - Google Patents
Method of fabricating a semiconductor device Download PDFInfo
- Publication number
- US6339003B1 US6339003B1 US09/609,390 US60939000A US6339003B1 US 6339003 B1 US6339003 B1 US 6339003B1 US 60939000 A US60939000 A US 60939000A US 6339003 B1 US6339003 B1 US 6339003B1
- Authority
- US
- United States
- Prior art keywords
- insulating interlayer
- forming
- gate
- semiconductor substrate
- fabricating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 85
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 22
- 239000011229 interlayer Substances 0.000 claims abstract description 95
- 239000010410 layer Substances 0.000 claims abstract description 59
- 239000000758 substrate Substances 0.000 claims abstract description 58
- 238000000151 deposition Methods 0.000 claims abstract description 23
- 239000012212 insulator Substances 0.000 claims abstract description 15
- 239000012535 impurity Substances 0.000 claims abstract description 11
- 238000000059 patterning Methods 0.000 claims abstract description 10
- 238000000206 photolithography Methods 0.000 claims abstract description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 17
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 17
- 125000006850 spacer group Chemical group 0.000 claims description 10
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 7
- 239000005380 borophosphosilicate glass Substances 0.000 claims description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 7
- 239000011521 glass Substances 0.000 claims description 5
- 238000000034 method Methods 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 238000002955 isolation Methods 0.000 claims description 3
- 230000003647 oxidation Effects 0.000 claims description 2
- 238000007254 oxidation reaction Methods 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 239000002356 single layer Substances 0.000 claims 1
- 238000005530 etching Methods 0.000 description 8
- 238000001020 plasma etching Methods 0.000 description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 229920005591 polysilicon Polymers 0.000 description 6
- 239000000126 substance Substances 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 4
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76897—Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
- H01L21/76832—Multiple layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
- H01L21/76834—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers formation of thin insulating films on the sidewalls or on top of conductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
- H01L29/6659—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET
Definitions
- the present invention relates to a method of fabricating a semiconductor device which reduces leakage current by controlling an etch of a field oxide layer when a contact hole is formed.
- a technique of forming a borderless contact has been developed to reduce leakage current by forming the contact hole to be overlapped with a field oxide layer, which provides an easy process and prevents the etch of the field oxide layer.
- FIG. 1A to FIG. 1D show cross-sectional views of fabricating a semiconductor device according to a related art.
- a field oxide layer 13 defining an active area and a field area of a device is formed on a p-typed semiconductor substrate 11 by shallow trench isolation(hereinafter abbreviated STI).
- the field oxide layer 13 is formed by forming a pad oxide layer(not shown in the drawing) and a mask layer(not shown in the drawing) which expose the field area on the semiconductor substrate 11 , by forming trenches 12 which are slant to a predetermined degree by carrying out an anisotropic etch such as reactive ion etching(hereinafter abbreviated RIE) and the like on the exposed parts of the semiconductor substrate 11 , by filling the trenches with silicon oxide, then by removing the pad oxide and mask layers.
- RIE reactive ion etching
- a gate oxide layer 15 has been formed on the active area of the semiconductor substrate 11 .
- polysilicon doped with impurities is deposited on the gate insulating layer 15 by chemical vapor deposition(hereinafter abbreviated CVD).
- CVD chemical vapor deposition
- a gate 17 is formed by patterning the polysilicon to remain on a predetermined portion of the semiconductor substrate 11 by photolithography including anisotropic etches such as RME and the like.
- Lightly doped regions 19 for LDD(lightly doped drain) regions are formed by implanting ions lightly into the exposed portions of the semiconductor substrate 11 with n typed impurities in use of the gate 17 as a mask.
- a sidewall spacer 21 is formed at the sides of the gate 17 .
- the sidewall spacer 21 is formed by deposing silicon oxide on the semiconductor substrate 11 to cover the field oxide layer 13 and gate 17 by CVD, then by etching back the silicon oxide to have the semiconductor substrate 11 exposed by RIE.
- Heavily doped regions 23 for a source and a drain region are formed by implanting with n typed impurity ions heavily into the exposed portions of the semiconductor substrate 11 in use of the gate 17 and sidewall spacer 21 as a mask.
- a first insulating interlayer 25 is formed by depositing silicon nitride on the semiconductor substrate 11 to cover the field oxide layer 13 , gate 17 , and sidewall spacer 21 by CVD.
- a second insulating interlayer 27 is formed by depositing silicon oxide or BPSG(boro phospho silicate glass) on the first insulating interlayer 25 by CVD or by coating the first insulating layer 25 with SOG(spin on glass).
- a first and a second contact hole 29 and 31 exposing the gate and heavily doped regions 23 respectively are formed by patterning the second and first insulating interlayers 27 and 25 by photolithography including anisotropic etch such as RIE and the like.
- the first and second contact holes 29 and 31 are formed by etching the second insulating interlayer 27 sufficiently, which means that the second insulating interlayer 27 is overetched to expose the first insulating interlayer 25 corresponding to the heavily doped regions 23 , then by etching the first insulating interlayer 25 .
- the first insulating interlayer 25 as an etch stop layer prevents the field oxide layer 13 from being etched in spite of etching the second insulating interlayer 27 sufficiently.
- an electrically-conductive substance such as polysilicon, Al, and the like is deposited on the second insulating interlayer 27 to be contacted with the gate 17 and heavily of doped regions 23 through the first and second contact holes 29 and 31 .
- a first and a second plug 33 and 35 are formed in the first and second contact holes 29 and 31 respectively by removing the electrically-conductive substance to expose the surface of the second insulating interlayer 27 by chemical-mechanical polishing(hereinafter abbreviated CMP).
- the above-mentioned method of fabricating a semiconductor device prevents the field oxide layer from being etched by overetching the second insulating interlayer to expose portions of the first insulating interlayer corresponding to the heavily doped regions for forming the first and second contact holes exposing the gate and heavily doped regions and by etching the first insulating interlayer successively.
- the method of fabricating a semiconductor device of the related art causes leakage current due to the difference in heat expansion coefficient between the semiconductor substrate and the first insulating interlayer of silicon nitride as well as stress caused by lattice mismatch.
- the present invention is directed to a method of fabricating a semiconductor device that substantially obviates one or more of the proulenis due to limitations and disadvantages of the related art.
- the object of the present invention is to provide a method of fabricating a semiconductor device which prevents the leakage current occurrence by avoiding the stress due to the contact between the semiconductor substrate and insulating interlayer.
- the present invention includes the steps of forming a field oxide layer defining an active area and a field area on a semiconductor substrate of a first conductive type, forming a gate on the active area of the semiconductor substrate by inserting a gate insulating layer between the semiconductor substrate and the gate, forming impurity regions of a second conductive type in the semiconductor substrate in use of the gate as a mask, forming a first insulating interlayer on the semiconductor substrate by depositing an insulator of which heat expansion coefficient and lattice mismatch are less than those of the semiconductor substrate to cover the field oxide layer and the gate, forming a second insulating interlayer on the first insulating interlayer by depositing another insulator of which etch rate is different from that of the first insulating interlayer, forming a third insulating interlayer on the second insulating interlayer by depositing another insulator of which etch rate is different from that of the second insulating
- the present invention includes the steps of forming a field oxide layer defining an active area and a field area on a semiconductor substrate of a first conductive type, forming a gate on the active area of the semiconductor substrate by inserting a gate insulating layer between the semiconductor substrate and the gate, forming a sidewall spacer at a side of the gate, forming lightly doped regions of a second conductive type in exposed portions of the semiconductor substrate, forming heavily doped regions of the second conductive type in the semiconductor substrate in use of the gate as a mask wherein the heavily doped regions are overlapped with the lightly doped regions, forming a first insulating interlayer on the semiconductor substrate by depositing an insulator of which heat expansion coefficient and lattice mismatch are less than those of the semiconductor substrate to cover the field oxide layer and the gate, forming a second insulating interlayer on the first insulating interlayer by depositing another insulator of which etch rate is different from that of the first insulating interlayer, forming a third insulating interlayer
- FIG. 1A to FIG. 1D show cross-sectional views of fabricating a semiconductor device according to a related art
- FIG. 2A to FIG. 2D show cross-sectional views of fabricating a semiconductor device according to the present invention.
- FIG. 2A to FIG. 2D show cross-sectional views of fabricating a semiconductor device according to the present invention.
- a field oxide layer 43 defining an active area and a field area of a device is formed on a p-typed semiconductor substrate 41 by shallow trench isolation(hereinafter abbreviated STI).
- the field oxide layer 43 is formed by forming a pad oxide layer(not shown in the drawing) and a mask layer(not shown in the drawing) which expose the field area on the semiconductor substrate 41 , by forming trenches 42 which are slant to a predetermined degree by carrying out an anisotropic etch such as RIE and the like on the exposed parts of the semiconductor substrate 41 , by filling the trenches with silicon oxide, then by removing the pad oxide and mask layers.
- the field oxide layer 41 may be formed by local oxidation of silicon(LOCOS).
- a gate oxide layer 45 has been formed on the active area of the semiconductor substrate 41 .
- polysilicon doped with impurities is deposited on the gate insulating layer 45 by CVD.
- a gate 47 is formed by patterning the polysilicon to remain on a predetermined portion of the semiconductor substrate 41 by photolithography including anisotropic etches such as RIE and the like.
- Lightly doped regions 49 for LDD regions are formed by implanting ions lightly into the exposed portions of the semiconductor substrate 41 with n typed impurities such as P, As, etc, in use of the gate 17 as a mask.
- a sidewall spacer 51 is formed at the sides of the gate 47 .
- the sidewall spacer 51 is formed by deposing silicon oxide on the semiconductor substrate 41 to cover the field oxide layer 43 and gate 47 by CVD, then by etching back the silicon oxide to have the semiconductor substrate 41 exposed by RIE.
- Heavily doped regions 53 for a source and a drain region are formed by implanting with n typed impurity ions such as P, As, etc, heavily into the exposed portions of the semiconductor substrate 41 in use of the gate 47 and sidewall spacer 51 as a mask.
- a first insulating interlayer 55 100 to 300 ⁇ thick is formed by depositing silicon oxide on the semiconductor substrate 41 to cover the field oxide layer 43 , gate 47 , and sidewall spacer 51 by CVD.
- a heat expansion coefficient and lattice mismatch of silicon oxide for the first insulating layer 55 against the semiconductor substrate 41 are less than those of silicon nitride, thereby reducing leakage current due to stress.
- a second insulating interlayer 57 100 to 300 ⁇ thick is formed by depositing silicon nitride of which etch rate is different that of silicon oxide on the first insulating layer 55 by CVD.
- a third insulating interlayer 59 500 to 10000 ⁇ thick is formed by depositing silicon oxide or BPSG(boro phospho silicate glass) on the second insulating interlayer 57 by CVD or by coating the second insulating layer 57 with SOG(spin on glass).
- the portions of the third insulating interlayer 59 corresponding to the gate 47 and the heavily doped regions 53 differ in thickness. Namely, the portion of the third insulating interlayer 59 corresponding to the heavily doped regions 59 is thicker than the other portion corresponding to the gate 47 .
- the third insulating interlayer 59 may be formed with at least double layers of the above-mentioned substances.
- a first and a second contact hole 61 and 63 exposing the gate 47 and heavily doped regions 53 respectively are formed by patterning the third, second, and first insulating interlayers 59 , 57 , and 55 successively by photolithography including an anisotropic etch such as RIE and the like.
- portions of the second insulating layer 57 corresponding to the heavily doped regions 53 are exposed by overetching the third insulating interlayer 59 with a gas of C2F6 or C4F8 which is mixed with O2.
- the second insulating layer 57 of which etch rate is different from that of the third insulating layer 59 is used as an etch-stop layer.
- the first and second contact holes 61 and 63 are formed by etching the first insulating layer 55 to expose the semiconductor substrate 41 in use of the gas of C2F6 or C4F8 which is mixed with O2. which has been used for etching the third insulating interlayer 59 .
- the field oxide layer 43 is prevented from being damaged because it is easy to control the etch-end point owing to the thin first insulating interlayer 55 .
- an electrically-conductive substance such as polysilicon, Al, and the like is deposited on the third insulating interlayer 59 by CVD to be contacted with the gate 47 and heavily doped regions 53 through the first and second contact holes 61 and 63 . Then, a first and a second plug 65 and 67 are formed in the first and second contact holes 61 and 63 respectively by removing the electrically-conductive substance to expose the surface of the third insulating interlayer 59 by CMP.
- a first insulating layer of silicon oxide of which heat expansion coefficient and lattice mismatch are less than those of silicon nitride is formed on a semiconductor substrate, and a second insulating interlayer of silicon nitride used as an etch-stop layer and a third insulating interlayer of silicon oxide are formed on the first insulating interlayer successively.
- a first and a second contact hole exposing a gate and heavily doped regions are formed by patterning the third to first insulating interlayers by photolithography in order, wherein the third insulating interlayer are overetched to expose a portion of the second insulating interlayer corresponding to the heavily doped regions.
- the second insulating interlayer used as an etch-stop layer prevents the first insulating interlayer and field oxide layer from being etched.
- the present invention prevents the leakage current occurrence by avoiding the stress due to the contact between the semiconductor substrate and insulating interlayer.
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
The present invention relates to a method of fabricating a semiconductor device which reduces leakage current by controlling an etch of a field oxide layer when a contact hole is formed. The present invention includes the steps of forming a field oxide layer defining an active area and a field area on a semiconductor substrate of a first conductive type, forming a gate on the active area of the semiconductor substrate by inserting a gate insulating layer between the semiconductor substrate and the gate, forming impurity regions of a second conductive type in the semiconductor substrate in use of the gate as a mask, forming a first insulating interlayer on the semiconductor substrate by depositing an insulator of which heat expansion coefficient and lattice mismatch less than those of the semiconductor substrate to cover the field oxide layer and the gate, forming a second insulating interlayer on the first insulating interlayer by depositing another insulator of which etch rate is different from that of the first insulating interlayer, forming a third insulating interlayer on the second insulating interlayer by depositing another insulator of which etch rate is different from that of the second insulating interlayer, and forming a first contact hole and second contact holes exposing the gate and heavily doped regions respectively by patterning the third to first insulating interlayer successively by photolithography.
Description
1. Field of Invention
The present invention relates to a method of fabricating a semiconductor device which reduces leakage current by controlling an etch of a field oxide layer when a contact hole is formed.
2. Discussion of Related Art
As the integration of a semiconductor device increases, so the size of an unit transistor decreases. Thus, sizes of contact holes exposing impurity regions are reduced as well as the impurity regions for source and drain regions are decreased in size, causing difficulty in process. Besides, leakage current on the operation of the device is brought about by the etch of a field oxide layer due to misalignment in forming the contact holes.
Therefore, a technique of forming a borderless contact has been developed to reduce leakage current by forming the contact hole to be overlapped with a field oxide layer, which provides an easy process and prevents the etch of the field oxide layer.
FIG. 1A to FIG. 1D show cross-sectional views of fabricating a semiconductor device according to a related art.
Referring to FIG. 1A, a field oxide layer 13 defining an active area and a field area of a device is formed on a p-typed semiconductor substrate 11 by shallow trench isolation(hereinafter abbreviated STI). In this case, the field oxide layer 13 is formed by forming a pad oxide layer(not shown in the drawing) and a mask layer(not shown in the drawing) which expose the field area on the semiconductor substrate 11, by forming trenches 12 which are slant to a predetermined degree by carrying out an anisotropic etch such as reactive ion etching(hereinafter abbreviated RIE) and the like on the exposed parts of the semiconductor substrate 11, by filling the trenches with silicon oxide, then by removing the pad oxide and mask layers.
After a gate oxide layer 15 has been formed on the active area of the semiconductor substrate 11, polysilicon doped with impurities is deposited on the gate insulating layer 15 by chemical vapor deposition(hereinafter abbreviated CVD). Then, a gate 17 is formed by patterning the polysilicon to remain on a predetermined portion of the semiconductor substrate 11 by photolithography including anisotropic etches such as RME and the like.
Lightly doped regions 19 for LDD(lightly doped drain) regions are formed by implanting ions lightly into the exposed portions of the semiconductor substrate 11 with n typed impurities in use of the gate 17 as a mask.
Referring to FIG. 1B, a sidewall spacer 21 is formed at the sides of the gate 17. In this case, the sidewall spacer 21 is formed by deposing silicon oxide on the semiconductor substrate 11 to cover the field oxide layer 13 and gate 17 by CVD, then by etching back the silicon oxide to have the semiconductor substrate 11 exposed by RIE.
Heavily doped regions 23 for a source and a drain region are formed by implanting with n typed impurity ions heavily into the exposed portions of the semiconductor substrate 11 in use of the gate 17 and sidewall spacer 21 as a mask.
Referring to FIG. 1C, a first insulating interlayer 25 is formed by depositing silicon nitride on the semiconductor substrate 11 to cover the field oxide layer 13, gate 17, and sidewall spacer 21 by CVD. And, a second insulating interlayer 27 is formed by depositing silicon oxide or BPSG(boro phospho silicate glass) on the first insulating interlayer 25 by CVD or by coating the first insulating layer 25 with SOG(spin on glass).
A first and a second contact hole 29 and 31 exposing the gate and heavily doped regions 23 respectively are formed by patterning the second and first insulating interlayers 27 and 25 by photolithography including anisotropic etch such as RIE and the like. As the thickness of the second insulating interlayer 27 is irregular due to the height difference between the gate 17 and heavily doped regions 23, the first and second contact holes 29 and 31 are formed by etching the second insulating interlayer 27 sufficiently, which means that the second insulating interlayer 27 is overetched to expose the first insulating interlayer 25 corresponding to the heavily doped regions 23, then by etching the first insulating interlayer 25.
In this case, as the etch rate of the first insulating interlayer 25 is different from that of the second insulating interlayer 27, the first insulating interlayer 25 as an etch stop layer prevents the field oxide layer 13 from being etched in spite of etching the second insulating interlayer 27 sufficiently.
Referring to FIG. 1D, an electrically-conductive substance such as polysilicon, Al, and the like is deposited on the second insulating interlayer 27 to be contacted with the gate 17 and heavily of doped regions 23 through the first and second contact holes 29 and 31. Then, a first and a second plug 33 and 35 are formed in the first and second contact holes 29 and 31 respectively by removing the electrically-conductive substance to expose the surface of the second insulating interlayer 27 by chemical-mechanical polishing(hereinafter abbreviated CMP).
The above-mentioned method of fabricating a semiconductor device prevents the field oxide layer from being etched by overetching the second insulating interlayer to expose portions of the first insulating interlayer corresponding to the heavily doped regions for forming the first and second contact holes exposing the gate and heavily doped regions and by etching the first insulating interlayer successively.
Unfortunately, the method of fabricating a semiconductor device of the related art causes leakage current due to the difference in heat expansion coefficient between the semiconductor substrate and the first insulating interlayer of silicon nitride as well as stress caused by lattice mismatch.
Accordingly, the present invention is directed to a method of fabricating a semiconductor device that substantially obviates one or more of the proulenis due to limitations and disadvantages of the related art.
The object of the present invention is to provide a method of fabricating a semiconductor device which prevents the leakage current occurrence by avoiding the stress due to the contact between the semiconductor substrate and insulating interlayer.
Additional features and advantages of the invention will be set forth in the description which follows and in part will be apparent from the description, or may be learned by practice of the invention. The objectives and other advantages of the invention will be realized and attained by the structure particularly pointed out in the written description and claims hereof as well as the appended drawings.
To achieve these and other advantages and in accordance with the purpose of the present invention, as embodied and broadly described, the present invention includes the steps of forming a field oxide layer defining an active area and a field area on a semiconductor substrate of a first conductive type, forming a gate on the active area of the semiconductor substrate by inserting a gate insulating layer between the semiconductor substrate and the gate, forming impurity regions of a second conductive type in the semiconductor substrate in use of the gate as a mask, forming a first insulating interlayer on the semiconductor substrate by depositing an insulator of which heat expansion coefficient and lattice mismatch are less than those of the semiconductor substrate to cover the field oxide layer and the gate, forming a second insulating interlayer on the first insulating interlayer by depositing another insulator of which etch rate is different from that of the first insulating interlayer, forming a third insulating interlayer on the second insulating interlayer by depositing another insulator of which etch rate is different from that of the second insulating interlayer, and forming a first contact hole and second contact holes exposing the gate and heavily doped regions respectively by patterning the third to first insulating interlayer successively by photolithography.
In another aspect, the present invention includes the steps of forming a field oxide layer defining an active area and a field area on a semiconductor substrate of a first conductive type, forming a gate on the active area of the semiconductor substrate by inserting a gate insulating layer between the semiconductor substrate and the gate, forming a sidewall spacer at a side of the gate, forming lightly doped regions of a second conductive type in exposed portions of the semiconductor substrate, forming heavily doped regions of the second conductive type in the semiconductor substrate in use of the gate as a mask wherein the heavily doped regions are overlapped with the lightly doped regions, forming a first insulating interlayer on the semiconductor substrate by depositing an insulator of which heat expansion coefficient and lattice mismatch are less than those of the semiconductor substrate to cover the field oxide layer and the gate, forming a second insulating interlayer on the first insulating interlayer by depositing another insulator of which etch rate is different from that of the first insulating interlayer, forming a third insulating interlayer on the second insulating interlayer by depositing another insulator of which etch rate is different from that of the second insulating interlayer, forming a first contact hole and second contact holes exposing the gate and heavily doped regions respectively by patterning the third to first insulating interlayer successively by photolithography, and forming first and second plugs in the first and second contact holes.
It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory and are intended to provide further explanation of the invention as claimed.
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this application, illustrate embodiments of the inventing and together with the description serve to explain the principle of the invention. In the drawings:
FIG. 1A to FIG. 1D show cross-sectional views of fabricating a semiconductor device according to a related art; and
FIG. 2A to FIG. 2D show cross-sectional views of fabricating a semiconductor device according to the present invention.
Reference will now be made in detail to the preferred embodiments of the present invention, examples of which are illustrated in the accompanying drawings.
FIG. 2A to FIG. 2D show cross-sectional views of fabricating a semiconductor device according to the present invention.
Referring to FIG. 2A, a field oxide layer 43 defining an active area and a field area of a device is formed on a p-typed semiconductor substrate 41 by shallow trench isolation(hereinafter abbreviated STI). In this case, the field oxide layer 43 is formed by forming a pad oxide layer(not shown in the drawing) and a mask layer(not shown in the drawing) which expose the field area on the semiconductor substrate 41, by forming trenches 42 which are slant to a predetermined degree by carrying out an anisotropic etch such as RIE and the like on the exposed parts of the semiconductor substrate 41, by filling the trenches with silicon oxide, then by removing the pad oxide and mask layers. Besides, the field oxide layer 41 may be formed by local oxidation of silicon(LOCOS).
After a gate oxide layer 45 has been formed on the active area of the semiconductor substrate 41, polysilicon doped with impurities is deposited on the gate insulating layer 45 by CVD. Then, a gate 47 is formed by patterning the polysilicon to remain on a predetermined portion of the semiconductor substrate 41 by photolithography including anisotropic etches such as RIE and the like.
Lightly doped regions 49 for LDD regions are formed by implanting ions lightly into the exposed portions of the semiconductor substrate 41 with n typed impurities such as P, As, etc, in use of the gate 17 as a mask.
Referring to FIG. 2B, a sidewall spacer 51 is formed at the sides of the gate 47. In this case, the sidewall spacer 51 is formed by deposing silicon oxide on the semiconductor substrate 41 to cover the field oxide layer 43 and gate 47 by CVD, then by etching back the silicon oxide to have the semiconductor substrate 41 exposed by RIE.
Heavily doped regions 53 for a source and a drain region are formed by implanting with n typed impurity ions such as P, As, etc, heavily into the exposed portions of the semiconductor substrate 41 in use of the gate 47 and sidewall spacer 51 as a mask.
Referring to FIG. 2C, a first insulating interlayer 55 100 to 300 Å thick is formed by depositing silicon oxide on the semiconductor substrate 41 to cover the field oxide layer 43, gate 47, and sidewall spacer 51 by CVD. In this case, a heat expansion coefficient and lattice mismatch of silicon oxide for the first insulating layer 55 against the semiconductor substrate 41 are less than those of silicon nitride, thereby reducing leakage current due to stress.
And, a second insulating interlayer 57 100 to 300 Å thick is formed by depositing silicon nitride of which etch rate is different that of silicon oxide on the first insulating layer 55 by CVD.
Then, a third insulating interlayer 59 500 to 10000 Å thick is formed by depositing silicon oxide or BPSG(boro phospho silicate glass) on the second insulating interlayer 57 by CVD or by coating the second insulating layer 57 with SOG(spin on glass).
As the surface of the third insulating interlayer 59 becomes even, the portions of the third insulating interlayer 59 corresponding to the gate 47 and the heavily doped regions 53 differ in thickness. Namely, the portion of the third insulating interlayer 59 corresponding to the heavily doped regions 59 is thicker than the other portion corresponding to the gate 47. In this case, the third insulating interlayer 59 may be formed with at least double layers of the above-mentioned substances.
A first and a second contact hole 61 and 63 exposing the gate 47 and heavily doped regions 53 respectively are formed by patterning the third, second, and first insulating interlayers 59, 57, and 55 successively by photolithography including an anisotropic etch such as RIE and the like.
When the first and second contact holes 61 and 63 are formed, portions of the second insulating layer 57 corresponding to the heavily doped regions 53 are exposed by overetching the third insulating interlayer 59 with a gas of C2F6 or C4F8 which is mixed with O2. In this case, the second insulating layer 57 of which etch rate is different from that of the third insulating layer 59 is used as an etch-stop layer.
After the exposed portions of the second insulating interlayer 57 has been etched by C2HF6O2, the first and second contact holes 61 and 63 are formed by etching the first insulating layer 55 to expose the semiconductor substrate 41 in use of the gas of C2F6 or C4F8 which is mixed with O2. which has been used for etching the third insulating interlayer 59. In this case, the field oxide layer 43 is prevented from being damaged because it is easy to control the etch-end point owing to the thin first insulating interlayer 55.
Referring to FIG. 2D, an electrically-conductive substance such as polysilicon, Al, and the like is deposited on the third insulating interlayer 59 by CVD to be contacted with the gate 47 and heavily doped regions 53 through the first and second contact holes 61 and 63. Then, a first and a second plug 65 and 67 are formed in the first and second contact holes 61 and 63 respectively by removing the electrically-conductive substance to expose the surface of the third insulating interlayer 59 by CMP.
As mentioned in the above description of the method of fabricating a semiconductor device of the present invention, a first insulating layer of silicon oxide of which heat expansion coefficient and lattice mismatch are less than those of silicon nitride is formed on a semiconductor substrate, and a second insulating interlayer of silicon nitride used as an etch-stop layer and a third insulating interlayer of silicon oxide are formed on the first insulating interlayer successively.
And, a first and a second contact hole exposing a gate and heavily doped regions are formed by patterning the third to first insulating interlayers by photolithography in order, wherein the third insulating interlayer are overetched to expose a portion of the second insulating interlayer corresponding to the heavily doped regions. In this case, the second insulating interlayer used as an etch-stop layer prevents the first insulating interlayer and field oxide layer from being etched.
Accordingly, the present invention prevents the leakage current occurrence by avoiding the stress due to the contact between the semiconductor substrate and insulating interlayer.
It will be apparent to those skilled in the art that various modifications and variations can be made in a method of fabricating a semiconductor device of the present invention without departing from the spirit or scope of the inventions. Thus, it is intended that the present invention cover the modifications and variations of this invention provided they come within the scope of the appended claims and equivalents.
Claims (13)
1. A method of fabricating a semiconductor device comprising the steps of:
forming a field oxide layer defining an active area and a field area on a semiconductor substrate of a first conductive type;
forming a gate on the active area of the semiconductor substrate by inserting a gate insulating layer between the semiconductor substrate and the gate;
forming impurity regions of a second conductive type in the semiconductor substrate in use of the gate as a mask;
forming a first insulating interlayer on the semiconductor substrate by depositing an insulator of which heat expansion coefficient and lattice mismatch are less than those of the semiconductor substrate to cover the field oxide layer and the gate;
forming a second insulating interlayer on the first insulating interlayer by depositing another insulator of which etch rate is different from that of the first insulating interlayer;
forming a third insulating interlayer on the second insulating interlayer by depositing another insulator of which etch rate is different from that of the second insulating interlayer; and
forming a first contact hole and second contact holes exposing the gate and heavily doped regions respectively by patterning the third to first insulating interlayer successively by photolithography.
2. The method of fabricating a semiconductor device according to claim 1 , wherein the field oxide layer is formed by shallow trench isolation or by local oxidation of silicon.
3. The method of fabricating a semiconductor device according to claim 1 , wherein the first insulating interlayer is formed by depositing silicon oxide 100 to 300 Å thick.
4. The method of fabricating a semiconductor device according to claim 3 , wherein the first insulating interlayer is etched by a mixed gas of (C2F6+O2) or (C4F8+O2).
5. The method of fabricating a semiconductor device according to claim 1 , wherein the second insulating interlayer is formed by depositing silicon nitride 100 to 300 Å thick.
6. The method of fabricating a semiconductor device according to claim 5 , wherein the second insulating interlayer is etched by C2HF6O2.
7. The method of fabricating a semiconductor device according to claim 1 , wherein the third insulating interlayer is formed by depositing silicon oxide or boro phospho silicate glass or by coating with spin on glass.
8. The method of fabricating a semiconductor device according to claim 7 , wherein the third insulating interlayer of a single layer is formed with one of silicon oxide, boro phospho silicate glass, or spin on glass or wherein the third insulating interlayer of at least double layers is formed with silicon oxide, boro phospho silicate glass and spin on glass.
9. The method of fabricating a semiconductor device according to claim 7 , wherein a surface of the third insulating interlayer is formed to be even.
10. The method of fabricating a semiconductor device according to claim 7 , wherein the third insulating interlayer is etched by a mixed gas of (C2F6+O2) or (C4F8+O2).
11. The method of fabricating a semiconductor device according to claim 10 , wherein the third insulating interlayer is overetched to expose the second insulating interlayer corresponding to the heavily doped regions.
12. The method of fabricating a semiconductor device according to claim 1 , the method further comprising the step of forming first and second plugs in the first and second contact holes.
13. A method of fabricating a semiconductor device comprising the steps of
forming a field oxide layer defining an active area and a field area on a semiconductor substrate of a first conductive type;
forming a gate on the active area of the semiconductor substrate by inserting a gate insulating layer between the semiconductor substrate and the gate;
forming a sidewall spacer at a side of the gate;
forming lightly doped regions of a second conductive type in exposed portions of the semiconductor substrate;
forming heavily doped regions of the second conductive type in the semiconductor substrate in use of the gate as a mask wherein the heavily doped regions are overlapped with the lightly doped regions;
forming a first insulating interlayer on the semiconductor substrate by depositing an insulator of which heat expansion coefficient and lattice mismatch are less than those of the semiconductor substrate to cover the field oxide layer and the gate;
forming a second insulating interlayer on the first insulating interlayer by depositing another insulator of which etch rate is different from that of the first insulating interlayer;
forming a third insulating interlayer on the second insulating interlayer by depositing another insulator of which etch rate is different from that of the second insulating interlayer;
forming a first contact hole and second contact holes exposing the gate and heavily doped regions respectively by patterning the third to first insulating interlayer successively by photolithography; and
forming first and second plugs in the first and second contact holes.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/952,576 USRE41205E1 (en) | 1999-08-21 | 2004-09-28 | Method of fabricating a semiconductor device |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019990034743A KR100333361B1 (en) | 1999-08-21 | 1999-08-21 | a method for fabricating a semiconductor device |
KR99-34743 | 1999-08-21 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/952,576 Reissue USRE41205E1 (en) | 1999-08-21 | 2004-09-28 | Method of fabricating a semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
US6339003B1 true US6339003B1 (en) | 2002-01-15 |
Family
ID=19608138
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US09/609,390 Ceased US6339003B1 (en) | 1999-08-21 | 2000-07-03 | Method of fabricating a semiconductor device |
US10/952,576 Expired - Lifetime USRE41205E1 (en) | 1999-08-21 | 2004-09-28 | Method of fabricating a semiconductor device |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/952,576 Expired - Lifetime USRE41205E1 (en) | 1999-08-21 | 2004-09-28 | Method of fabricating a semiconductor device |
Country Status (2)
Country | Link |
---|---|
US (2) | US6339003B1 (en) |
KR (1) | KR100333361B1 (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6551901B1 (en) * | 2001-08-21 | 2003-04-22 | Lsi Logic Corporation | Method for preventing borderless contact to well leakage |
US7098515B1 (en) | 2001-08-21 | 2006-08-29 | Lsi Logic Corporation | Semiconductor chip with borderless contact that avoids well leakage |
US20100190328A1 (en) * | 2008-02-29 | 2010-07-29 | Roland Hampp | Self Aligned Silicided Contacts |
CN115295615A (en) * | 2022-10-08 | 2022-11-04 | 合肥晶合集成电路股份有限公司 | Semiconductor structure and manufacturing method thereof |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4966870A (en) | 1988-04-14 | 1990-10-30 | International Business Machines Corporation | Method for making borderless contacts |
US5949092A (en) * | 1997-08-01 | 1999-09-07 | Advanced Micro Devices, Inc. | Ultra-high-density pass gate using dual stacked transistors having a gate structure with planarized upper surface in relation to interlayer insulator |
US6077731A (en) * | 1996-01-19 | 2000-06-20 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for fabricating the same |
US6159839A (en) * | 1999-02-11 | 2000-12-12 | Vanguard International Semiconductor Corporation | Method for fabricating borderless and self-aligned polysilicon and metal contact landing plugs for multilevel interconnections |
US6159844A (en) * | 1998-05-29 | 2000-12-12 | Philips Electronics North America Corp. | Fabrication of gate and diffusion contacts in self-aligned contact process |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5811343A (en) * | 1996-07-15 | 1998-09-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Oxidation method for removing fluorine gas inside polysilicon during semiconductor manufacturing to prevent delamination of subsequent layer induced by fluorine outgassing dielectric |
US5912188A (en) * | 1997-08-04 | 1999-06-15 | Advanced Micro Devices, Inc. | Method of forming a contact hole in an interlevel dielectric layer using dual etch stops |
JPH11340321A (en) * | 1998-05-27 | 1999-12-10 | Sony Corp | Semiconductor device and its manufacture |
US6211092B1 (en) * | 1998-07-09 | 2001-04-03 | Applied Materials, Inc. | Counterbore dielectric plasma etch process particularly useful for dual damascene |
KR100284905B1 (en) * | 1998-10-16 | 2001-04-02 | 윤종용 | Contact Forming Method of Semiconductor Device |
-
1999
- 1999-08-21 KR KR1019990034743A patent/KR100333361B1/en not_active IP Right Cessation
-
2000
- 2000-07-03 US US09/609,390 patent/US6339003B1/en not_active Ceased
-
2004
- 2004-09-28 US US10/952,576 patent/USRE41205E1/en not_active Expired - Lifetime
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4966870A (en) | 1988-04-14 | 1990-10-30 | International Business Machines Corporation | Method for making borderless contacts |
US6077731A (en) * | 1996-01-19 | 2000-06-20 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for fabricating the same |
US5949092A (en) * | 1997-08-01 | 1999-09-07 | Advanced Micro Devices, Inc. | Ultra-high-density pass gate using dual stacked transistors having a gate structure with planarized upper surface in relation to interlayer insulator |
US6159844A (en) * | 1998-05-29 | 2000-12-12 | Philips Electronics North America Corp. | Fabrication of gate and diffusion contacts in self-aligned contact process |
US6159839A (en) * | 1999-02-11 | 2000-12-12 | Vanguard International Semiconductor Corporation | Method for fabricating borderless and self-aligned polysilicon and metal contact landing plugs for multilevel interconnections |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6551901B1 (en) * | 2001-08-21 | 2003-04-22 | Lsi Logic Corporation | Method for preventing borderless contact to well leakage |
US6893937B1 (en) | 2001-08-21 | 2005-05-17 | Lsi Logic Corporation | Method for preventing borderless contact to well leakage |
US7098515B1 (en) | 2001-08-21 | 2006-08-29 | Lsi Logic Corporation | Semiconductor chip with borderless contact that avoids well leakage |
US20100190328A1 (en) * | 2008-02-29 | 2010-07-29 | Roland Hampp | Self Aligned Silicided Contacts |
US8187962B2 (en) * | 2008-02-29 | 2012-05-29 | Infineon Technologies Ag | Self aligned silicided contacts |
US8643126B2 (en) | 2008-02-29 | 2014-02-04 | Infineon Technologies Ag | Self aligned silicided contacts |
CN115295615A (en) * | 2022-10-08 | 2022-11-04 | 合肥晶合集成电路股份有限公司 | Semiconductor structure and manufacturing method thereof |
Also Published As
Publication number | Publication date |
---|---|
KR20010018687A (en) | 2001-03-15 |
KR100333361B1 (en) | 2002-04-18 |
USRE41205E1 (en) | 2010-04-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6297126B1 (en) | Silicon nitride capped shallow trench isolation method for fabricating sub-micron devices with borderless contacts | |
US5652176A (en) | Method for providing trench isolation and borderless contact | |
US6265302B1 (en) | Partially recessed shallow trench isolation method for fabricating borderless contacts | |
KR100338778B1 (en) | Method for fabricating MOS transistor using selective silicide process | |
US6323104B1 (en) | Method of forming an integrated circuitry isolation trench, method of forming integrated circuitry, and integrated circuitry | |
US6335279B2 (en) | Method of forming contact holes of semiconductor device | |
US6635576B1 (en) | Method of fabricating borderless contact using graded-stair etch stop layers | |
KR20030010507A (en) | Manufacturing method of semiconductor device | |
US6271108B1 (en) | Method of forming a contact in semiconductor device | |
US6699746B2 (en) | Method for manufacturing semiconductor device | |
KR100377833B1 (en) | Semiconductor device with borderless contact structure and method of manufacturing the same | |
US6211021B1 (en) | Method for forming a borderless contact | |
US6339003B1 (en) | Method of fabricating a semiconductor device | |
US6255218B1 (en) | Semiconductor device and fabrication method thereof | |
US6383921B1 (en) | Self aligned silicide contact method of fabrication | |
US6204185B1 (en) | Method for forming self-align stop layer for borderless contact process | |
US6143595A (en) | Method for forming buried contact | |
US6511890B2 (en) | Method of fabricating a semiconductor device | |
US6303449B1 (en) | Method to form self-aligned elevated source/drain by selective removal of gate dielectric in the source/drain region followed by poly deposition and CMP | |
KR20060042460A (en) | Method for manufacturing a transistor having a recess channel | |
KR100589498B1 (en) | Method of manufacturing semiconductor device | |
KR20000039307A (en) | Method for forming contact of semiconductor device | |
KR100574920B1 (en) | Semiconductor device having a self-aligned contact and manufacturing method therefor | |
KR100520514B1 (en) | Method of manufacturing semiconductor device | |
KR20010011651A (en) | A method of forming a contact in semiconductor device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: HYUNDAI ELECTRONICS INDUSTRIES CO., LTD., KOREA, R Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:KIM, JAE-YOUNG;REEL/FRAME:010924/0612 Effective date: 20000623 |
|
STCF | Information on status: patent grant |
Free format text: PATENTED CASE |
|
RF | Reissue application filed |
Effective date: 20040928 |
|
FPAY | Fee payment |
Year of fee payment: 4 |
|
FPAY | Fee payment |
Year of fee payment: 8 |
|
FEPP | Fee payment procedure |
Free format text: PAYOR NUMBER ASSIGNED (ORIGINAL EVENT CODE: ASPN); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY |