US4956744A - Multilayer capacitor - Google Patents
Multilayer capacitor Download PDFInfo
- Publication number
- US4956744A US4956744A US07/319,005 US31900589A US4956744A US 4956744 A US4956744 A US 4956744A US 31900589 A US31900589 A US 31900589A US 4956744 A US4956744 A US 4956744A
- Authority
- US
- United States
- Prior art keywords
- electrode material
- end contacts
- layers
- lead
- palladium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000003990 capacitor Substances 0.000 title claims abstract description 33
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims abstract description 54
- 229910052709 silver Inorganic materials 0.000 claims abstract description 34
- 239000004332 silver Substances 0.000 claims abstract description 34
- 239000007772 electrode material Substances 0.000 claims abstract description 28
- 229910052763 palladium Inorganic materials 0.000 claims abstract description 27
- 229910010293 ceramic material Inorganic materials 0.000 claims abstract description 16
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 12
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 12
- 239000011521 glass Substances 0.000 claims description 22
- 239000002245 particle Substances 0.000 claims description 14
- 229910000464 lead oxide Inorganic materials 0.000 claims description 13
- 239000000203 mixture Substances 0.000 claims description 13
- YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical compound [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 claims description 13
- 238000004519 manufacturing process Methods 0.000 claims description 11
- 239000011230 binding agent Substances 0.000 claims description 9
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 5
- 229910000510 noble metal Inorganic materials 0.000 claims description 3
- 239000006104 solid solution Substances 0.000 claims description 3
- 238000009792 diffusion process Methods 0.000 abstract description 14
- 230000032798 delamination Effects 0.000 abstract description 4
- 238000005336 cracking Methods 0.000 abstract description 3
- 230000015572 biosynthetic process Effects 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 39
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 26
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 239000000919 ceramic Substances 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- 239000003985 ceramic capacitor Substances 0.000 description 3
- 239000011888 foil Substances 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 description 2
- 239000001856 Ethyl cellulose Substances 0.000 description 2
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229920001249 ethyl cellulose Polymers 0.000 description 2
- 235000019325 ethyl cellulose Nutrition 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000005012 migration Effects 0.000 description 2
- 238000013508 migration Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910018404 Al2 O3 Inorganic materials 0.000 description 1
- 229910004742 Na2 O Inorganic materials 0.000 description 1
- 229910018487 Ni—Cr Inorganic materials 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 230000009931 harmful effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- HTUMBQDCCIXGCV-UHFFFAOYSA-N lead oxide Chemical compound [O-2].[Pb+2] HTUMBQDCCIXGCV-UHFFFAOYSA-N 0.000 description 1
- LQBJWKCYZGMFEV-UHFFFAOYSA-N lead tin Chemical compound [Sn].[Pb] LQBJWKCYZGMFEV-UHFFFAOYSA-N 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 238000007736 thin film deposition technique Methods 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/005—Electrodes
- H01G4/008—Selection of materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/228—Terminals
- H01G4/232—Terminals electrically connecting two or more layers of a stacked or rolled capacitor
- H01G4/2325—Terminals electrically connecting two or more layers of a stacked or rolled capacitor characterised by the material of the terminals
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/43—Electric condenser making
- Y10T29/435—Solid dielectric type
Definitions
- the invention relates to a multilayer capacitor comprising alternate layers of a dielectric oxidic ceramic material and a palladium-containing electrode material, and having metallic end contacts which electrically conductively contact a prescribed part of the layers of electrode material, the metallic end contacts containing silver.
- the invention also relates to such a multilayer capacitor, in which the metallic end contacts electrically conductively contact the layers of electrode material via an intermediate layer of a conductive metal oxide.
- the invention also relates to a method of manufacturing such a multilayer capacitor.
- the electrode material consists of a mixture of silver and palladium and use is made of an intermediate layer.
- the intermediate layer is a homogeneous thin layer having a thickness which must not exceed 2 ⁇ m, the layer being applied by means of a thin-film deposition method such as sputtering, vapour deposition or chemical deposition from the vapor phase.
- a thin-film deposition method such as sputtering, vapour deposition or chemical deposition from the vapor phase.
- layers of Ni-Cr, Ni and/or Ag are applied by means of vapor deposition and sputtering so as to obtain solderable end contacts.
- the intermediate metal oxide layer is provided to avoid a reduction of the ceramic material. Said reduction may occur as a result of diffusion of oxygen from the ceramic material to the metallic end contacts at a raised temperature, and it causes the insulation resistance of the ceramic material to be substantially reduced.
- a mixture of metal, such as silver and, for example, palladium or other noble metals, and glass in the form of a paste is used.
- the paste can readily be applied by immersing and it can be fired together with the internal electrode layers of the multilayer capacitor.
- the metallic end contacts thus obtained contain a quantity of glass particles.
- this method a number of problems are encountered, as will be explained hereinafter.
- the inner electrodes are made in the usual manner, preferably, of palladium which has a large affinity for silver.
- the volume and thickness of the inner electrodes increases locally which may lead to delamination and cracking.
- Outward migration of palladium caused by diffusion or increased pressure on the inner electrodes also takes place, albeit to a lesser extent.
- the material of the end contacts may become locally detached from the ceramic material and cavities may be formed. The formation of cavities may be counteracted by using a silver paste having a high glass-particle content, but then the problem arises that it is difficult to apply solderable layers onto such end contacts. Moreover, silver diffusion continues.
- a further object of the invention is to provide products which have no cracks and cavities in the vicinity of the end contacts and in which electrical faults are absent.
- An additional object of the invention is to provide a multilayer capacitor in which the end contacts can be manufactured, if desired, from a paste in a readily conceivable manner.
- multilayer capacitor as described in the opening paragraph, which multilayer capacitor is characterized in that the electrode material comprises metallic lead.
- the electrode material of the inner electrodes preferably consists of palladium with 1 to 10% by weight of lead.
- a quantity of lead below 1% by weight is substantially ineffective in suppressing silver diffusion. If a quantity exceeding 10% by weight of lead is used, the properties of the dielectric ceramic material are adversely affected.
- FIGURE in the drawing is a schematic cross-sectional view of a ceramic capacitor according to the inventor.
- the metallic end contacts electrically conductively contact the layers of electrode material via an intermediate layer of a conductive metal oxide
- a further improvement of the result is obtained in that the intermediate layer is a heterogeneous layer which comprises glass particles in addition to the conductive metal oxide, and which has a thickness of at least 1 ⁇ m.
- the glass particles consist of a glass composition comprising lead oxide.
- a part of the lead oxide is reduced to lead having sufficient affinity for palladium to form an additional protective layer between the palladium inner electrodes and the silver-containing end contacts, and which lead forms a very effective barrier against silver diffusion.
- the end contact comprises a layer of glass particles and a noble metal, preferably selected from silver and mixtures of silver and palladium.
- the glass particles consist of a glass composition comprising lead oxide, the lead oxide content preferably exceeding 15% by weight.
- solderability for the multilayer capacity and suppress metal diffusion to the solder material
- it is efficacious to cover the end contact with a common solder coating for example a nickel layer followed by a layer of tin or lead-tin.
- the object of providing a method of manufacturing a multilayer capacitor which is made of alternate layers of a dielectric oxidic ceramic material and an electrode material, which capacitor is provided with metallic end contacts which electrically conductively contact a prescribed part of the layers of electrode material, the metallic end contacts containing silver, is achieved by a method in which the layers of electrode material are manufactured from a paste comprising palladium, a temporary binder and lead in the form of lead oxide or metallic lead, the paste being fired in order to remove the temporary binder to form electrodes from a solid solution of metallic lead in palladium.
- a finely ground ceramic, dielectric powder for example manufactured from BaTiO 3
- a binder such as polyvinyl alcohol, a dispersing agent and water to form a slurry.
- the slurry is deposited in thin layers, for example having a thickness of 50 ⁇ m, which are dried to obtain foils.
- a lead-containing palladium paste is manufactured from pure palladium containing less than 1% by weight of impurities lead in the form of finely dispersed lead oxide is added to this paste, for example in a quantity of 4% by weight, and the rest is palladium.
- the metal paste comprises, for example, 70% by weight of metal and metal oxide, 2 to 3% by weight of ethyl cellulose as a binder, and 2-ethoxy-ethyl acetate as a solvent.
- the ceramic foils are provided with electrodes by means of screen printing using the palladium paste.
- the foils are stacked, for example in ten layers, compressed and divided into separate capacitor bodies, for example, having dimensions of 3 ⁇ 1.5 mm 2 .
- the capacitor bodies are sintered at temperatures between 1100° and 1400° C., dependent upon the composition of the ceramic material, according to the present example at 1250° C.
- the ceramic material shrinks during sintering and densifies into a dense polycrystalline structure.
- the thickness of the ceramic layers amounts to approximately 25 ⁇ m.
- the powder particles of the metal paste are simultaneously sintered into electrode layers of metal which form a coherent unity with the dielectric layers.
- the palladium reacts with the lead oxide to form a solid solution of metallic lead in palladium.
- a metal oxide paste is manufactured from 60% by weight of RuO 2 powder and 40% by weight of glass particles, ethyl cellulose being used as a binder and 2-ethoxy-ethyl acetate as a solvent to obtain a suitable viscosity.
- the solids content of the paste amounts to 70 to 80% by weight, the quantity of binder amounts to 2 to 3% by weight and the rest is solvent.
- the composition of the glass particles which have dimensions from 1 to 2 ⁇ m, is for example: 37% by weight of PbO, 18% by weight of B 2 O 3 , 22% by weight of SiO 2 , 11% by weight of ZnO, 3% by weight of Al 2 O 3 , 1.5% by weight of Na 2 O and 7.5% by weight of BaO.
- the capacitor bodies Prior to the manufacture of the end contacts, the capacitor bodies are partly immersed in the metal oxide paste and fired at 850° C., layers having a thickness of approximately 15 ⁇ m being formed on both sides.
- the resistivity of the layers formed amounts to approximately 0.01 ⁇ cm.
- end contacts are manufactured from a metal paste consisting of 95% by weight of silver particles and 5% by weight of glass particles, for example having the composition as has been described.
- the binder and the solvent used are also the same as in the metal oxide paste.
- the metal paste is fired at a temperature of 750° C. If desired, solderable layers of Ni and/or Sn/Pb are additionally provided electrolytically or by means of electro-deposition or vacuum evaporation.
- the Figure is a schematic cross-sectional view of a ceramic capacitor according to the invention, which comprises ceramic layers 1 and internal electrode layers or inner electrodes 2, and which is provided with metallic end contacts 4 having conductive intermediate layers 3.
- Ceramic multilayer capacitors are manufactured as indicated in Example 1, the intermedicate layers 3 from the metal oxide paste being omitted.
- the invention provides ceramic multilayer capacitors and a method of manufacturing thereof, their quality being improved and the number of rejects being substantially reduced. Comparative experiments have shown that silver diffusion to the inner electrodes can be effectively suppressed as well as the negative consequences of such a diffusion.
- the glass which is commonly added to the metal paste used for the manufacture of end contacts is mainly used to fill up cracks and cavities so as to suppress the harmful effects of silver diffusion. When silver diffusion no longer occurs, the glass content of the silver paste can be selected to be very low (less than 5% by weight) or the glass can even be omitted. It is alternatively possible to manufacture an end contact which is composed of two layers, the first layer consisting of a glass-containing silver paste and the second layer consisting of a glass-free silver paste, which layers can be fired simultaneously.
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Ceramic Capacitors (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL8800559A NL8800559A (nl) | 1988-03-07 | 1988-03-07 | Keramische meerlaagscondensator. |
NL8800559 | 1988-03-07 | ||
NL8900079A NL8900079A (nl) | 1989-01-13 | 1989-01-13 | Meerlaagscondensator. |
NL8900079 | 1989-01-13 |
Publications (1)
Publication Number | Publication Date |
---|---|
US4956744A true US4956744A (en) | 1990-09-11 |
Family
ID=26646358
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US07/319,005 Expired - Lifetime US4956744A (en) | 1988-03-07 | 1989-03-03 | Multilayer capacitor |
Country Status (4)
Country | Link |
---|---|
US (1) | US4956744A (de) |
EP (1) | EP0332254B1 (de) |
KR (1) | KR970009772B1 (de) |
DE (1) | DE68912365T2 (de) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5021921A (en) * | 1989-07-07 | 1991-06-04 | Murata Manufacturing Co., Ltd. | Monolithic ceramic capacitor |
US5655209A (en) * | 1995-03-28 | 1997-08-05 | International Business Machines Corporation | Multilayer ceramic substrates having internal capacitor, and process for producing same |
US5712758A (en) * | 1995-04-18 | 1998-01-27 | Rohm Co., Ltd. | Multilayer ceramic chip capacitor and a process for its manufacture |
US20080017987A1 (en) * | 2004-06-03 | 2008-01-24 | International Rectifier Corporation | Semiconductor device with reduced contact resistance |
US20080183644A1 (en) * | 2007-01-31 | 2008-07-31 | Microsoft Corporation | Lightweight physical design alerter |
US20080183764A1 (en) * | 2007-01-31 | 2008-07-31 | Microsoft Corporation | Continuous physical design tuning |
US20120306323A1 (en) * | 2010-01-22 | 2012-12-06 | Epcos Ag | Method for Producing a Piezoelectric Multilayer Component and a Piezoelectric Multilayer Component |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102004003523B4 (de) * | 2004-01-23 | 2006-03-16 | Epcos Ag | Elektrisches Bauelement und Verfahren zu dessen Herstellung |
JP4540355B2 (ja) | 2004-02-02 | 2010-09-08 | 富士通株式会社 | 液晶表示装置及びその製造方法 |
DE102004005664B4 (de) | 2004-02-05 | 2018-12-06 | Epcos Ag | Elektrisches Bauelement und Verfahren zu dessen Herstellung |
FR2886449B1 (fr) * | 2005-05-25 | 2010-08-27 | Tpc | Condensateur film multicouche presentant une bonne soudabilite et procede de fabrication d'un tel condensateur |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3811937A (en) * | 1967-03-27 | 1974-05-21 | Sprague Electric Co | Low temperature fired electrical components and method of making same |
US3900773A (en) * | 1972-06-12 | 1975-08-19 | Era Patents Ltd | Electrical capacitors |
EP0011389A1 (de) * | 1978-11-16 | 1980-05-28 | Union Carbide Corporation | Keramischer Kondensator mit gleichzeitig gebrennten Stirnkontaktierungen aus Base-Metall und Paste oder Tinte zum Herstellen dieser Kontaktierungen |
DD151529A1 (de) * | 1980-06-17 | 1981-10-21 | Renate Gesemann | Keramischer kondensator und verfahren zu dessen herstellung |
US4401767A (en) * | 1981-08-03 | 1983-08-30 | Johnson Matthey Inc. | Silver-filled glass |
US4604676A (en) * | 1984-10-02 | 1986-08-05 | Murata Manufacturing Co., Ltd. | Ceramic capacitor |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4426356A (en) * | 1982-09-30 | 1984-01-17 | E. I. Du Pont De Nemours And Company | Method for making capacitors with noble metal electrodes |
-
1989
- 1989-03-01 EP EP89200510A patent/EP0332254B1/de not_active Expired - Lifetime
- 1989-03-01 DE DE68912365T patent/DE68912365T2/de not_active Expired - Fee Related
- 1989-03-03 US US07/319,005 patent/US4956744A/en not_active Expired - Lifetime
- 1989-03-13 KR KR1019890003039A patent/KR970009772B1/ko not_active IP Right Cessation
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3811937A (en) * | 1967-03-27 | 1974-05-21 | Sprague Electric Co | Low temperature fired electrical components and method of making same |
US3900773A (en) * | 1972-06-12 | 1975-08-19 | Era Patents Ltd | Electrical capacitors |
EP0011389A1 (de) * | 1978-11-16 | 1980-05-28 | Union Carbide Corporation | Keramischer Kondensator mit gleichzeitig gebrennten Stirnkontaktierungen aus Base-Metall und Paste oder Tinte zum Herstellen dieser Kontaktierungen |
DD151529A1 (de) * | 1980-06-17 | 1981-10-21 | Renate Gesemann | Keramischer kondensator und verfahren zu dessen herstellung |
US4401767A (en) * | 1981-08-03 | 1983-08-30 | Johnson Matthey Inc. | Silver-filled glass |
US4604676A (en) * | 1984-10-02 | 1986-08-05 | Murata Manufacturing Co., Ltd. | Ceramic capacitor |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5021921A (en) * | 1989-07-07 | 1991-06-04 | Murata Manufacturing Co., Ltd. | Monolithic ceramic capacitor |
US5655209A (en) * | 1995-03-28 | 1997-08-05 | International Business Machines Corporation | Multilayer ceramic substrates having internal capacitor, and process for producing same |
US5712758A (en) * | 1995-04-18 | 1998-01-27 | Rohm Co., Ltd. | Multilayer ceramic chip capacitor and a process for its manufacture |
US20080017987A1 (en) * | 2004-06-03 | 2008-01-24 | International Rectifier Corporation | Semiconductor device with reduced contact resistance |
US20080183644A1 (en) * | 2007-01-31 | 2008-07-31 | Microsoft Corporation | Lightweight physical design alerter |
US20080183764A1 (en) * | 2007-01-31 | 2008-07-31 | Microsoft Corporation | Continuous physical design tuning |
US8150790B2 (en) | 2007-01-31 | 2012-04-03 | Microsoft Corporation | Lightweight physical design alerter |
US20120306323A1 (en) * | 2010-01-22 | 2012-12-06 | Epcos Ag | Method for Producing a Piezoelectric Multilayer Component and a Piezoelectric Multilayer Component |
US9343652B2 (en) * | 2010-01-22 | 2016-05-17 | Epcos Ag | Method for producing a piezoelectric multilayer component and a piezoelectric multilayer component |
US20160233409A1 (en) * | 2010-01-22 | 2016-08-11 | Epcos Ag | Method for Producing a Piezoelectric Multilayer Component and a Piezoelectric Multilayer Component |
US9825212B2 (en) * | 2010-01-22 | 2017-11-21 | Epcos Ag | Method for producing a piezoelectric multilayer component and a piezoelectric multilayer component |
Also Published As
Publication number | Publication date |
---|---|
KR970009772B1 (ko) | 1997-06-18 |
DE68912365T2 (de) | 1994-07-28 |
DE68912365D1 (de) | 1994-03-03 |
EP0332254A3 (en) | 1990-02-07 |
KR900015196A (ko) | 1990-10-26 |
EP0332254B1 (de) | 1994-01-19 |
EP0332254A2 (de) | 1989-09-13 |
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