US3598645A - Method of activating cds-photoresistors by heating in contact with cds admixed with cdo and cdse - Google Patents
Method of activating cds-photoresistors by heating in contact with cds admixed with cdo and cdse Download PDFInfo
- Publication number
- US3598645A US3598645A US783772A US3598645DA US3598645A US 3598645 A US3598645 A US 3598645A US 783772 A US783772 A US 783772A US 3598645D A US3598645D A US 3598645DA US 3598645 A US3598645 A US 3598645A
- Authority
- US
- United States
- Prior art keywords
- cds
- bodies
- powder
- cdo
- weight
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000000034 method Methods 0.000 title abstract description 30
- 230000003213 activating effect Effects 0.000 title abstract description 5
- 238000010438 heat treatment Methods 0.000 title description 14
- 239000000843 powder Substances 0.000 abstract description 36
- 239000000203 mixture Substances 0.000 abstract description 11
- 238000001953 recrystallisation Methods 0.000 description 20
- 230000004913 activation Effects 0.000 description 17
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 12
- 230000007935 neutral effect Effects 0.000 description 9
- 239000010949 copper Substances 0.000 description 8
- 229910052802 copper Inorganic materials 0.000 description 7
- 229910052709 silver Inorganic materials 0.000 description 7
- 239000000126 substance Substances 0.000 description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- 238000005286 illumination Methods 0.000 description 6
- 239000004332 silver Substances 0.000 description 6
- 239000002184 metal Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 150000002739 metals Chemical class 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 229910010293 ceramic material Inorganic materials 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000007669 thermal treatment Methods 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- LSNNMFCWUKXFEE-UHFFFAOYSA-N Sulfurous acid Chemical class OS(O)=O LSNNMFCWUKXFEE-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 150000003467 sulfuric acid derivatives Chemical class 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B60—VEHICLES IN GENERAL
- B60R—VEHICLES, VEHICLE FITTINGS, OR VEHICLE PARTS, NOT OTHERWISE PROVIDED FOR
- B60R1/00—Optical viewing arrangements; Real-time viewing arrangements for drivers or passengers using optical image capturing systems, e.g. cameras or video systems specially adapted for use in or on vehicles
- B60R1/02—Rear-view mirror arrangements
- B60R1/06—Rear-view mirror arrangements mounted on vehicle exterior
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
Definitions
- the invention relates to a method of manufacturing CdS-photoresistors with CdS bodies which are subjected to a thermal treatment in contact with CdS.
- a CdS- body is manufactured by compressing CdS powder or by sputtering or vapourdepositing CdS On a neutral support, for example, of ceramic material or glass. Doping of these bodies by copper and/or silver is carried out either by vapour deposition of these metals or by a thermal treatment in an atmosphere which contains the said materials.
- the CdS- bodies thus manufactured are then recrystallized and activated by a thermal treatment, the doping substances being incorporated in the newly-formed CdScrystals.
- the CdS-photoresistor is ready for use.
- the following properties are demanded, the simultaneous realisation of which in one resistor could so far he achieved only unsatisfactorily:
- a high dark resistance i.e. a high electrical resistance at illumination intensity of zero
- a low -value i.e. a low ratio of a resistance variation occurring at a given variation of the illumination intensity to this variation of the illumination intensity. Normally 'y is stated for a variation of the illumination intensity between 0.4 lux and 25.6 lux.
- the invention is characterized in that, for activation and possibly recrystallisation, the CdS-bodies are heated in contact with a mixture of CdS, CdSe and CdO in an atmosphere containing at least temporarily free oxygen or an oxygen-supplying compound.
- This method provides the advantages that the photoresistors thus manufactured simultaneously show a high dark resistance, a low 7- value, a suitable distribution of the spectral sensitivity and a high stability of these properties during the lifetime of the photoresistors.
- Recrystallisation of the CdS-body may be performed simultaneously with the activation or, according to further embodiments according to the invention, prior to activation by heating in contact with CdS or by heating in a HCl-containing atmosphere.
- the contact with the said substances CdS, CdSe and CdO is preferably obtained by embedding the CdS-bodies in powders of these substances.
- Doping of the CdS bodies is preferably carried out so that prior to recrystallisation copper and/or silver is vapour-deposited on the body and is then incorporated therein during the recrystallisation process.
- the CdS-bodies serving as bodies for the photoresistors to be manufactured can be produced by compressing CdS- powders to pellets of suitable size. Such compact bodies, however, have a rather large thickness, so that the danger exists that after a rather long recrystallisation and activation treatment the bodies are not homogeneous. Therefore, the CdS-bodies are preferably manufactured by spraying or vapour deposition of CdS on a neutral support, for example, a plate of a ceramic material. Usually a CdS-layer of approximately 5 m. to 10 am. thickness is vapour-deposited.
- the doping of the CdS-bodies with copper and/or silver is effected either by vapour depositing said metals on the bodies or by admixing to the CdS-powder in which recrystallisation takes place, so that during the recrystallisation process the two above metals are incorporated in the CdS.
- the further treatment of these CdS-bodies is carried out in two steps. First the vapour-deposited CdS-bodies are recrystallized either by heating in contact with CdS in which the bodies either lie on CdS-powder or are 3 buried in CdS-powder, or by heat ng in a HCl-containing atmosphere.
- the powder may be mixed with at most 30% by weight and preferably 8% by weight of CdO.
- the CdS-bodies are heated at a temperature between 350 C. and 650 C. preferably at 600 C.
- the duration of the heating is from 10 minutes to 60 minutes, preferably 45 minutes.
- the activation of the recrystallized CdS bodies is carried out by heating bodies in contact with the mixture of CdS, CdSe and CdO.
- the CdS-bodies are preferably embedded in a mixture consisting of powders of these substances.
- the mixture may consist of 2 to 14 parts by weight of CdS, 1 to 6 parts by weight of CdSe and 1 part by weight of CdO, preferably of 7 parts by weight of CdS, 3 parts by weight of CdSe and 1 part by weight of CdO.
- the activation takes place at a temperature between 450 C. and 550 C. preferably at 480 C.
- the duration of heating is from 5 minutes to 70 minutes preferably 16 minutes.
- the activation is first carried out in a neutral atmosphere, then, however, for at least one minute in an atmosphere containing S0 or 0
- the neutral atmosphere may consist of N CO or A.
- the doping substances are vapour-deposited on 8 ,um. thick CdS-layers provided on a support of a neutral ceramic material from a Ta-boat with 3 mgms. of Cu and 3 mgms. of Ag, which is arranged at a distance of 25 cm. from the CdS layers.
- the bodies are embedded in a powder consisting of 92% by weight of CdS and 8% by weight of CdO and heated for 45 minutes at 600 C. in an S0 atmosphere.
- the CdS-bodies are then again embedded in a powder which consists of 7 parts by weight of CdS, 3 parts by weight of CdSe and 1 part by weight of CdO.
- the bodies are heated at 480 C. for 16 minutes in an atmosphere consisting of N for 14 minutes succeeded by an atmosphere consisting of S0 for 2 minutes.
- Electrodes consisting of indium and gold are then vapour-deposited on the CdS-bodies which are now photosensitive and the resistors are sealed hermetically in an envelope under dry air (H O content under 100 p.p.m.)
- the resistors thus manufactured have excellent properties. Their dark resistance lies at approximately 1M0, the 'y-value is approximately 0.65 and the stability in time is very good.
- the photoresistors are stored in complete darkness first for four hours at 60 C. and then for 20 hours at 25 C. and finally at 60 C. for four hours and an illumination intensity of 400 lux. Prior to and after every storage the resistance values are measured at 25 C. and an illumination intensity of 0.4 lux. In the photoresistors manufactured as described above, the average value of the variation is less than 7% of the value of the resistance.
- EXAMPLE 2 CdS-layers, likewise 8 urn. thick, which, as described in Example I, are doped and recrystallized by embedding them in a powder which likewise consists of 7 parts by weight of CdS, 3 parts by weight of CdSe and 1 part by weight of CdO, and heating at 450 'C. for 16 minutes in an atmosphere consisting of N for 14 minutes and then consisting of 0 for 2 minutes.
- the recrystallisation then takes on or above a powder which consists of CdS alone.
- the CdS-bodies and the powder are for this purpose heated for 30 minutes in an N atmosphere, succeeded by heating for 10 minutes in an S0 atmosphere at 600 C.
- a powder is used which consists of 5 parts by weight of CdS, 5 parts by weight of CdSe and 3 parts by weight of CdO on which powder, as described, the CdS-bodies are laid or provided above it.
- the CdS-bodies and the powder are heated at 480 C. for 12 minutes in an N -atmosphere, succeeded by heating at 480 C. for 4 minutes in an S0 atmosphere.
- Example I electrodes are vapour deposited on the CdS bodies and enclosed in envelopes; the properties of the photoresistors manufactured according to this example correspond to those which are manufactured according to Example I.
- the step of activating a CdS body by heating the body while in contact with a powder mixture of 2 to 14 parts by weight of CdS, 1 to 6 parts by weight of CdSe and 1 part by weight of 'CdO in an oxygen-free atmosphere.
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electromagnetism (AREA)
- Multimedia (AREA)
- Mechanical Engineering (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Battery Electrode And Active Subsutance (AREA)
- Thermistors And Varistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE1614351 | 1967-12-15 |
Publications (1)
Publication Number | Publication Date |
---|---|
US3598645A true US3598645A (en) | 1971-08-10 |
Family
ID=5681983
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US783772A Expired - Lifetime US3598645A (en) | 1967-12-15 | 1968-12-13 | Method of activating cds-photoresistors by heating in contact with cds admixed with cdo and cdse |
Country Status (7)
Country | Link |
---|---|
US (1) | US3598645A (de) |
JP (1) | JPS46541B1 (de) |
CH (1) | CH527490A (de) |
DE (1) | DE1614351C2 (de) |
DK (1) | DK129747B (de) |
FR (1) | FR1596891A (de) |
NL (1) | NL6817721A (de) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3754985A (en) * | 1971-04-05 | 1973-08-28 | Photophysics | Process for making a sintered photoconductive body |
US4759951A (en) * | 1985-09-25 | 1988-07-26 | Sharp Kabushiki Kaisha | Heat-treating Cd-containing photoelectric conversion film in the presence of a cadmium halide |
CN105206700A (zh) * | 2015-10-09 | 2015-12-30 | 南阳师范学院 | 一种可见光光敏电阻及其制作方法 |
CN105336798A (zh) * | 2015-10-09 | 2016-02-17 | 南阳师范学院 | 一种光敏电阻及其制作方法 |
CN106816489A (zh) * | 2017-02-28 | 2017-06-09 | 安徽拓吉泰新型陶瓷科技有限公司 | 一种光敏电阻瓷及其制备方法 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1077509A (fr) * | 1951-04-20 | 1954-11-09 | France Etat | Procédé d'homogénéisation et d'activation de cristaux semi-conducteurs et de couches semi-conductrices |
-
1967
- 1967-12-15 DE DE1967P0043621 patent/DE1614351C2/de not_active Expired
-
1968
- 1968-12-11 NL NL6817721A patent/NL6817721A/xx unknown
- 1968-12-12 CH CH1854568A patent/CH527490A/de not_active IP Right Cessation
- 1968-12-12 DK DK608768AA patent/DK129747B/da unknown
- 1968-12-13 US US783772A patent/US3598645A/en not_active Expired - Lifetime
- 1968-12-16 FR FR1596891D patent/FR1596891A/fr not_active Expired
- 1968-12-16 JP JP9167768A patent/JPS46541B1/ja active Pending
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3754985A (en) * | 1971-04-05 | 1973-08-28 | Photophysics | Process for making a sintered photoconductive body |
US4759951A (en) * | 1985-09-25 | 1988-07-26 | Sharp Kabushiki Kaisha | Heat-treating Cd-containing photoelectric conversion film in the presence of a cadmium halide |
CN105206700A (zh) * | 2015-10-09 | 2015-12-30 | 南阳师范学院 | 一种可见光光敏电阻及其制作方法 |
CN105336798A (zh) * | 2015-10-09 | 2016-02-17 | 南阳师范学院 | 一种光敏电阻及其制作方法 |
CN105206700B (zh) * | 2015-10-09 | 2017-03-22 | 南阳师范学院 | 一种可见光光敏电阻及其制作方法 |
CN106816489A (zh) * | 2017-02-28 | 2017-06-09 | 安徽拓吉泰新型陶瓷科技有限公司 | 一种光敏电阻瓷及其制备方法 |
Also Published As
Publication number | Publication date |
---|---|
DK129747B (da) | 1974-11-11 |
DE1614351C2 (de) | 1971-09-02 |
CH527490A (de) | 1972-08-31 |
DK129747C (de) | 1975-04-28 |
JPS46541B1 (de) | 1971-01-08 |
DE1614351B1 (de) | 1971-02-04 |
NL6817721A (de) | 1969-06-17 |
FR1596891A (de) | 1970-06-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US2879182A (en) | Photosensitive devices | |
US3598645A (en) | Method of activating cds-photoresistors by heating in contact with cds admixed with cdo and cdse | |
US4547702A (en) | Thin film electroluminscent display device | |
US2843914A (en) | Method of producing a photoconductive device | |
US3870558A (en) | Process for preparing a layer of compounds of groups II and VI | |
US3142586A (en) | Method for the manufacture of photosensitive elements | |
US2908594A (en) | Sintered photoconducting photocells and methods of making them | |
Sathaye et al. | Studies on thin films of cadmium sulphide prepared by a chemical deposition method | |
US2958932A (en) | Manufacture of cadmium sulfide photoconductive cell bodies | |
US3717837A (en) | Potentiometer | |
GB314838A (en) | Improvements in or relating to light sensitive cells | |
US2879362A (en) | Photosensitive device | |
US3706673A (en) | Aqueous composition for depositing phosphors | |
US3222215A (en) | Method of producing a photoconductive layer | |
US3351516A (en) | Photoconductive structural element and process of manufacturing same | |
US3284235A (en) | Method of manufacturing photoconductive layers | |
US3945935A (en) | Semiconductive metal chalcogenides of the type Cu3 VS4 and methods for preparing them | |
US3832298A (en) | Method for producing a photoconductive element | |
US3597259A (en) | Method of making high resolution image devices | |
US3598760A (en) | Cdse or cds-se photoconductors doped with a ib element and either bromine or iodine | |
US3492718A (en) | Method for preparing infrared quenching photoconductive material | |
US2903631A (en) | Selenium cells | |
US3704265A (en) | Sintered inorganic photoconductive elements and their method of preparation | |
DE2156045C3 (de) | In ihrer Lichtdurchlässigkeit veränderbare Vorrichtung mit einer phototropen Schicht | |
JPH0473635B2 (de) |