US3578420A - Metal film resistor - Google Patents

Metal film resistor Download PDF

Info

Publication number
US3578420A
US3578420A US761050A US3578420DA US3578420A US 3578420 A US3578420 A US 3578420A US 761050 A US761050 A US 761050A US 3578420D A US3578420D A US 3578420DA US 3578420 A US3578420 A US 3578420A
Authority
US
United States
Prior art keywords
thin film
evaporated
gold
resistance
evaporation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US761050A
Other languages
English (en)
Inventor
Yasuro Nishimura
Masao Tanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of US3578420A publication Critical patent/US3578420A/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/06—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material including means to minimise changes in resistance with changes in temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/18—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material comprising a plurality of layers stacked between terminals
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12535—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.] with additional, spatially distinct nonmetal component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12535—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.] with additional, spatially distinct nonmetal component
    • Y10T428/12597—Noncrystalline silica or noncrystalline plural-oxide component [e.g., glass, etc.]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771—Transition metal-base component
    • Y10T428/12778—Alternative base metals from diverse categories

Definitions

  • a metal film resistor by first evaporating a thin film including nickel, chromium, gold or other additive lmetals and provide an electrically stable second evaporated thin film on vsaid first evaporated thin film. This second film prevents diffusion and precipitation of gold in the first evaporated thin film and protects the first evaporated thin film.
  • the first evaporated thin film is fundamentally constituted of nickel, chromium and gold and can include other additives such as, for example, aluminum and copper.
  • the gold content of the first evaporated thin film is not so intimately related to the ratio of nickel and chromium and constitutes 60 to 95% by weight. Consequently, the temperature coefiicient of resistance of the ffirst evaporated thin film becomes small and the specific resistance also becomes very small. The time required for evaporation of the first evaporated thin film can, therefore, be shortened and the influence of the ratio between compositions during evaporation can be reduced.
  • gold is the chief constituent of the resistor thin film.
  • the second film can be formed by evaporating only the molecules of a nickel chromium alloy by stopping the evaporation of ⁇ gold or impeding the evaporated gold molecules by a shutter after the formation of the first film.
  • This method is simpler than one of forming the second evaporated thin film by using an additional evaporation source. It will be evident in view of the aforementioned that the second thin film need not only be a nickel chromium alloy but may also contain metals as can be used as the first thin film.
  • the first and second evaporated thin films are formed on an insulating base body.
  • Any material used in the conventional evaporation technique such as, for example, glass or ceramic, can be used as said base body.
  • the metal film resistor of this invention can be manufactured by the use of the well known vacuum evaporation apparatus.
  • Evaporation sources i.e., gold, nickel chromium alloy, nickel chromium gold alloy or alloys containing other metals, for constituting the evaporated thin films are evaporated by thermionic beam heating or resistance heating. Evaporation and accumulation can also be accomplished by ion bombardment.
  • a resistance film of small temperature coefiicient of resistance and specific resistance can be obtained. Further, the period of time for evaporation can be greatly shortened compared to the conventional manufacturing method Y and therefore the ratio between composition of the resistance thin film is not greatly varied and a metal film resistor of uniform characteristics can be obtained.
  • FIG. 1 shows at A and B the constitution of the resistor of the invention
  • FIG. 2 shows the arrangement of an evaporation source in vacuum evaporation apparatus to obtain a thin film constituting the resistor of this invention
  • lFIG. 4 shows the relationship between temperature and resistance in an example of this invention.
  • a first evaporated thin film 2 of nickel, chromium and gold was formed on a ceramic base body 1.
  • the thin film 2 can be formed as shown in FIG. 2.
  • a crucible containing a Nichrome alloy block 4 in which the ratio of nickel to chromium is 80 to 20 by weight and a Crucible containing gold 5 are provided in a single vacuum chamber. The temperatures, that is the vapor pressure of materials in the two ⁇ crucibles, are adjusted independently one from the other.
  • the crucible containing the Nichrome alloy block was kept 4 coefficient of resistance has been eliminated by this invention by forming the second evaporated thin film 3 on the first evaporated thin film 2 as shown in FIG. 1B.
  • This second layer creates the possibility that a conductive gold layer formed on the surface by diffusion and precipitation in the heat treatment is eliminated while the favorable electrcial characteristics of the first evaporated thin film are maintained.
  • a nickel chromium alloy or a metal the temperature coefficient of resistance of which is not very large can be used as the metal for the second thin film.
  • a single metal of chromium, titanium or nickel can be used.
  • the percentage of gold Iby weight in the first evaporated thin film is determined by the temperature of the evaporation source, the mass of the metal added from said evaporation source and the distance between said evaporation source and the base body. Therefore, by previously measuring the amount of attachment by evaporation of gold, nickel and chromium on the base body separately from each other under a certain condition of. evaporation, it becomes possible to know indirectly the percentage by weight of gold under the condition of evaporation. In the instant embodiment, the evaporation conditions were varied in order to obtain the relationship between the gold content and the temperature coefficient of resistance.
  • the temperature coefficient of resistance is varied as shown by curve a in FIG. 3.
  • the abscissa R indicates the gold content (percent by weight) of the thin film and the ordinate ⁇ C indicates the temperature coefficient of resistance (p.p.m./ C.).
  • the gold content in order for the temperature coefiicient of resistance of the thin film to be set at a value required in an ordinary resistor, for example a value within $50 p.p.m./ C., the gold content must be about 60% by weight. This value must be controlled correctly.
  • the sheet resistivity of the thin film can be varied as shown in FIG. 5.
  • This lFIG. 5 shows the relationship between the gold content R (percent by weight) and the area resistance Rs Q/sq. when the thin film is 300 A. thick.
  • the sheet resistivity is 57 .Q/sq. for a 300 A. thick film.
  • the heating temperature can be selected at 20D-300 C. and the heating can continue for a period of time of from several hours to over ten hours. Since the heating period can be varied arbitrarily, the heating temperature range can be further widened to 15G-350 C.
  • the second evaporated thin -film must be evaporated to a thickness that will not disturb the electrical characteristic of the first evaporated thin film. The thickness can be varied arbitrarily by one skilled in this field depending on the material used.
  • FIG. 3 shows the temperature coefiicient of resistance of a metal film obtained by evaporating the second evaporated thin film comprising nickel and chromium to a thickness of 200 A. on the first evaporated thin film comprising nickel, chromium and gold.
  • the gold AR/R when gold contents are 62%, 75%, 83% and 90%, respectively. These resistance changes are computed based on the resistance values available when the ambient temperature is 30 C. It is seen from the above that in a thin film, the gold content of which is about 80%, the temperature coefficient of resistance is approximately zero and the variation of the resistance to the temperature is a minimum when the temperature is near the room temperature.
  • the gold content of the first evaporated thin film of the resistor of which the temperature coefficient of resistance is approximately zero is higher by about 20% than the gold content of the resistor obtained by heating the first evaporated thin film only of which the temperature coefficient of resistance is approximately zero and that the slope of the curve is v gentle.
  • the gold content is 80%, the temperature coefficient of resistance is very small and the sheet resistivity is 30 f/sq.
  • the gold content of the first evaporated thin film is selected between 60% and 95%.
  • the temperature coefficient of resistance is varied approximately between -50 p.p.m./ C. and ⁇
  • the sheet resistivity is less than 60 Q/sq.
  • each of the first and second evaporated thin films comprises a mixture of nickel, chromium and other copper.
  • a first evaporated thin film comprising nickel,
  • chromium, aluminum, copper and gold of which the gold content is 33% by weight was formed on a ceramic base body by evaporating an evaporation source of gold and another evaporation source of a nickel chromium alloy in which the ratio by weight of nickel to chromium, aluminum and copper is 75:20:2.5:2.5, and the second evaporated thin film comprising nickel, chromium, aluminum and copper was further formed on said first evaporated thin film by evaporating an evaporation source of an alloy in which the ratio by weight of nickel to chromium, aluminum and copper is 75:20:2.5:2.5.
  • the first evaporated thin film of the metal film resistor was evaporated to a thickness of about 300 A.
  • the second evaporated thin film was evaporated to a thickness of 150 A. After the evaporation was finished, the two films were heated for 10 hours at 250 C.
  • This metal film resistor has a resistance of about 309 and a temperature coefficient of resistance of within 10 p.p.m./ C. The resistance change of this resistor in rela- 2.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Non-Adjustable Resistors (AREA)
  • Physical Vapour Deposition (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)
US761050A 1967-09-23 1968-09-20 Metal film resistor Expired - Lifetime US3578420A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP42061093A JPS503868B1 (de) 1967-09-23 1967-09-23

Publications (1)

Publication Number Publication Date
US3578420A true US3578420A (en) 1971-05-11

Family

ID=13161105

Family Applications (1)

Application Number Title Priority Date Filing Date
US761050A Expired - Lifetime US3578420A (en) 1967-09-23 1968-09-20 Metal film resistor

Country Status (5)

Country Link
US (1) US3578420A (de)
JP (1) JPS503868B1 (de)
DE (1) DE1790082C3 (de)
FR (1) FR1581389A (de)
GB (1) GB1220964A (de)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4929494A (de) * 1972-07-19 1974-03-15
US4164607A (en) * 1977-04-04 1979-08-14 General Dynamics Corporation Electronics Division Thin film resistor having a thin layer of resistive metal of a nickel, chromium, gold alloy
US4226899A (en) * 1978-08-21 1980-10-07 General Dynamics Corporation Electronics Division Method for fabricating controlled TCR thin film resistors
US5835112A (en) * 1996-10-08 1998-11-10 Hewlett-Packard Company Segmented electrical distribution plane

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS549762U (de) * 1977-06-22 1979-01-22
DE3003136A1 (de) * 1980-01-29 1981-07-30 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von thermisch stabilen, metallischen schichten

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4929494A (de) * 1972-07-19 1974-03-15
JPS5328630B2 (de) * 1972-07-19 1978-08-16
US4164607A (en) * 1977-04-04 1979-08-14 General Dynamics Corporation Electronics Division Thin film resistor having a thin layer of resistive metal of a nickel, chromium, gold alloy
US4226899A (en) * 1978-08-21 1980-10-07 General Dynamics Corporation Electronics Division Method for fabricating controlled TCR thin film resistors
US5835112A (en) * 1996-10-08 1998-11-10 Hewlett-Packard Company Segmented electrical distribution plane

Also Published As

Publication number Publication date
DE1790082C3 (de) 1973-09-20
DE1790082A1 (de) 1972-04-13
FR1581389A (de) 1969-09-12
JPS503868B1 (de) 1975-02-12
DE1790082B2 (de) 1973-03-01
GB1220964A (en) 1971-01-27

Similar Documents

Publication Publication Date Title
EP0245900B1 (de) Mehrschicht-Filmwiderstand mit hohem Widerstand und hoher Stabilität
US3218194A (en) Gold loaded tantalum film
US2962393A (en) Method of preparing electrical resistors
US4454495A (en) Layered ultra-thin coherent structures used as electrical resistors having low temperature coefficient of resistivity
US3578420A (en) Metal film resistor
US4164607A (en) Thin film resistor having a thin layer of resistive metal of a nickel, chromium, gold alloy
US4758321A (en) Method of sputtered depositing chromium-silicon-nitrogen resistor
US4323875A (en) Method of making temperature sensitive device and device made thereby
US4172718A (en) Ta-containing amorphous alloy layers and process for producing the same
US4063211A (en) Method for manufacturing stable metal thin film resistors comprising sputtered alloy of tantalum and silicon and product resulting therefrom
US3058842A (en) Evaporation method
US2953484A (en) Cobalt-chromium electrical resistance device
US4042479A (en) Thin film resistor and a method of producing the same
US3665599A (en) Method of making refractory metal carbide thin film resistors
US4226899A (en) Method for fabricating controlled TCR thin film resistors
Siddall et al. Vacuum-deposited metal film resistors
Dorey et al. The variation of resistance of gold films with time and annealing procedure
US3503030A (en) Indirectly-heated thermistor
US3674549A (en) Manufacturing process for an insb thin film semiconductor element
US3018198A (en) Film resistor and method of making same
US3545967A (en) Metal-semiconductor alloys for thin-film resistors
US2842463A (en) Vapor deposited metal films
US3112222A (en) Precision electrical resistors
Dhere et al. Composition and temperature coefficient of resistance of Ni-Cr thin films
Isler et al. Influence of deposition and processing parameters on the tcr of ni-cr-cu-al alloy film resistors