US2913561A - Processing semiconductor rods - Google Patents
Processing semiconductor rods Download PDFInfo
- Publication number
- US2913561A US2913561A US806174A US80617459A US2913561A US 2913561 A US2913561 A US 2913561A US 806174 A US806174 A US 806174A US 80617459 A US80617459 A US 80617459A US 2913561 A US2913561 A US 2913561A
- Authority
- US
- United States
- Prior art keywords
- rod
- high frequency
- coil
- semiconductor
- thickness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J11/00—Recovery or working-up of waste materials
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G63/00—Macromolecular compounds obtained by reactions forming a carboxylic ester link in the main chain of the macromolecule
- C08G63/78—Preparation processes
- C08G63/80—Solid-state polycondensation
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/28—Controlling or regulating
- C30B13/30—Stabilisation or shape controlling of the molten zone, e.g. by concentrators, by electromagnetic fields; Controlling the section of the crystal
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B6/00—Heating by electric, magnetic or electromagnetic fields
- H05B6/02—Induction heating
- H05B6/22—Furnaces without an endless core
- H05B6/30—Arrangements for remelting or zone melting
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J2367/00—Characterised by the use of polyesters obtained by reactions forming a carboxylic ester link in the main chain; Derivatives of such polymers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1004—Apparatus with means for measuring, testing, or sensing
- Y10T117/1008—Apparatus with means for measuring, testing, or sensing with responsive control means
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
- Y10T117/1084—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone having details of a stabilizing feature
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
- Y10T117/1088—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone including heating or cooling details
Definitions
- This invention relates to the processing of semiconductor rods and is particularly concerned with automatic thickness regulation incident to zone drawing applied to semiconductor rods.
- Theurer has described a method of zone drawing of semiconductor rods, especially silicon rods, comprising holding a silicon rod at its opposite ends, and drawing a molten zone produced by inductive heating through the medium of a high frequency coil, axially of the rod. Such method is employed for purifying semiconductor material and for producing mono-crystalline semiconductor rods.
- the current fed from a high frequency current source to the coil surrounding the semiconductor rod which changes with changing thickness of the rod, is utilized for controlling the operation of a device adapted to change the spacing between the holding means for the semiconductor rod, such device moving the holding means respectively toward and away from each other, until the current flowing in the high frequency coil again assumes the desired value.
- Fig. 3 illustrates a feature of the heating system.
- variable yresistor 9 is at the start of the operation so adjusted that an anode current corresponding to the desired rod thickness causes a voltage drop at such resistor, which is equal to the voltage delivered by the battery 10, so that the polarized relay 11 willl be in a normal position with the contact spring 15 positioned as shown. If the thickness of the semiconductor rod and therewith the anode current of ⁇ the generator change in the course of the operation, the relay 11 will energize, causing the contact 15 to establish engagement with contact 16 or contact 17, depending upon the direction in which the current change took place.
- rIi'he load resistance ZH may also be such as to permit working within the descending branch of the curve, about at the point B, that is, the power N delivered by the generator and therewith the anode current will become smaller when the rod becomes thinner and ZH increases.
- the relay 11 vmust be oppositely poled as compared with the operationV which utilizes the working point A in the ascending branch of the curve.
- the heating system shown in Fig. 3 is connected when it is desired to change the thickness of the semiconductor rod during the drawing.
- a second coil 25 in series therewith.
- the characteristic impedance of these two coils can again be compensated by means of a'eapacitor 26.
- the inductance of the coil 25 may be varied, for example, by immersion into or withdrawal from the coil 25, of a metallic memberV 27, thereby affecting the operatively effective load resistance of the system between the terminals 12 and 13 and therewith the Vanode current and the thickness of the semiconductor rod.
- a method according to claim 2 comprising connecting a further coil in series with said high frequency coil and changing the inductance of said further coil by disn placement of a metallic member relative'thereto, for the purpose of changing the thickness of the semiconductor rod during the processing thereof.
- an Varl-rangement for automatically regulating the 4thickness of saidv semiconductor rod during the processing thereof comprising a device for varying the spacing between said rod-holding means to'effect respectively stretching and compressing of said rod, operating means for said device,A control means for governing said operating means, and Vcircuit means controlled by the current supplied by said high frequency source to said high frequency coil, which current changes with changing thickness ofpsaid molten zone, for governing theractuation of said control means.
- a structure and cooperation of parts according to claim 10, comprising a capacitor connected in parallel with said high frequency coil.
- control means comprises -a relay connected to the anode circuit of said high frequency current source for governing the actuation of said operating means to control the operation of said device to effect 6 compressing or stretching of said semiconductor rod responsive respectively to decrease and increase of the thickness of said molten zone.
- said operating means comprises a reversible motor for controlling said device in two directions of motion thereof, and circuit means governed by said relay for controlling the directional rotation of said motor depending upon variations of the anode current of said high frequency current source.
- a structure and cooperation of parts according to claim 19, comprising a capacitor and a resistor connected in series with said relay.
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- General Induction Heating (AREA)
- Silicon Compounds (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DES57931A DE1153908B (de) | 1958-04-22 | 1958-04-22 | Verfahren und Vorrichtung zum tiegellosen Zonenschmelzen mit Abstandsaenderung der Stabenden |
Publications (1)
Publication Number | Publication Date |
---|---|
US2913561A true US2913561A (en) | 1959-11-17 |
Family
ID=7492176
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US806174A Expired - Lifetime US2913561A (en) | 1958-04-22 | 1959-04-13 | Processing semiconductor rods |
Country Status (6)
Country | Link |
---|---|
US (1) | US2913561A (fr) |
BE (1) | BE578011A (fr) |
CH (1) | CH373903A (fr) |
DE (1) | DE1153908B (fr) |
FR (1) | FR1222189A (fr) |
GB (1) | GB900545A (fr) |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2992311A (en) * | 1960-09-28 | 1961-07-11 | Siemens Ag | Method and apparatus for floatingzone melting of semiconductor rods |
US3046379A (en) * | 1959-09-11 | 1962-07-24 | Siemens Ag | Method and apparatus for zone melting of semiconductor material |
US3136876A (en) * | 1960-10-26 | 1964-06-09 | Clevite Corp | Indicator and control system |
US3160478A (en) * | 1959-06-12 | 1964-12-08 | Siemens Ag | Apparatus for floating-zone melting |
US3188735A (en) * | 1960-06-27 | 1965-06-15 | Laske Hans | Method for producing very thin and bright metal wires and profiles |
US3259467A (en) * | 1962-12-07 | 1966-07-05 | Siemens Ag | Apparatus for pulling rod-shaped crystals of semiconductor material from a melt in acrucible |
US3265470A (en) * | 1959-08-17 | 1966-08-09 | Siemens Ag | Method and apparatus for floating-zone melting of semiconductor material |
US3270177A (en) * | 1960-01-20 | 1966-08-30 | Merck & Co Inc | Means and method for automatic zone refining a work piece |
US3271551A (en) * | 1963-09-06 | 1966-09-06 | Siemens Ag | Method for crucible free zone melting |
US3275419A (en) * | 1961-03-09 | 1966-09-27 | Siemens Ag | Method and apparatus for producing elongated strip-shaped crystalline semiconductor bodies |
US3321299A (en) * | 1964-10-13 | 1967-05-23 | Monsanto Co | Apparatus and process for preparing semiconductor rods |
US3428436A (en) * | 1963-12-16 | 1969-02-18 | Monsanto Co | Methods and apparatus for zone melting |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL274321A (fr) * | 1961-02-07 | |||
NL6411697A (fr) * | 1963-10-15 | 1965-04-20 | ||
GB2146186A (en) * | 1983-08-25 | 1985-04-11 | Electroheating Int | Apparatus for electrically heating a metallic workpiece |
-
1958
- 1958-04-22 DE DES57931A patent/DE1153908B/de active Pending
-
1959
- 1959-04-13 US US806174A patent/US2913561A/en not_active Expired - Lifetime
- 1959-04-16 CH CH7213259A patent/CH373903A/de unknown
- 1959-04-22 BE BE578011A patent/BE578011A/fr unknown
- 1959-04-22 FR FR792841A patent/FR1222189A/fr not_active Expired
- 1959-04-22 GB GB13710/59A patent/GB900545A/en not_active Expired
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3160478A (en) * | 1959-06-12 | 1964-12-08 | Siemens Ag | Apparatus for floating-zone melting |
US3265470A (en) * | 1959-08-17 | 1966-08-09 | Siemens Ag | Method and apparatus for floating-zone melting of semiconductor material |
US3046379A (en) * | 1959-09-11 | 1962-07-24 | Siemens Ag | Method and apparatus for zone melting of semiconductor material |
US3270177A (en) * | 1960-01-20 | 1966-08-30 | Merck & Co Inc | Means and method for automatic zone refining a work piece |
US3188735A (en) * | 1960-06-27 | 1965-06-15 | Laske Hans | Method for producing very thin and bright metal wires and profiles |
US2992311A (en) * | 1960-09-28 | 1961-07-11 | Siemens Ag | Method and apparatus for floatingzone melting of semiconductor rods |
US3136876A (en) * | 1960-10-26 | 1964-06-09 | Clevite Corp | Indicator and control system |
US3275419A (en) * | 1961-03-09 | 1966-09-27 | Siemens Ag | Method and apparatus for producing elongated strip-shaped crystalline semiconductor bodies |
US3259467A (en) * | 1962-12-07 | 1966-07-05 | Siemens Ag | Apparatus for pulling rod-shaped crystals of semiconductor material from a melt in acrucible |
US3271551A (en) * | 1963-09-06 | 1966-09-06 | Siemens Ag | Method for crucible free zone melting |
US3428436A (en) * | 1963-12-16 | 1969-02-18 | Monsanto Co | Methods and apparatus for zone melting |
US3321299A (en) * | 1964-10-13 | 1967-05-23 | Monsanto Co | Apparatus and process for preparing semiconductor rods |
Also Published As
Publication number | Publication date |
---|---|
GB900545A (en) | 1962-07-04 |
BE578011A (fr) | 1959-08-17 |
FR1222189A (fr) | 1960-06-08 |
DE1153908B (de) | 1963-09-05 |
CH373903A (de) | 1963-12-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US2913561A (en) | Processing semiconductor rods | |
US2992311A (en) | Method and apparatus for floatingzone melting of semiconductor rods | |
US2773161A (en) | Combination control system for continuous heat treatment | |
US3046379A (en) | Method and apparatus for zone melting of semiconductor material | |
US2916593A (en) | Induction heating apparatus and its use in silicon production | |
US2631268A (en) | Voltage regulator | |
US3265470A (en) | Method and apparatus for floating-zone melting of semiconductor material | |
US2266569A (en) | Temperature control system | |
US2306479A (en) | Measuring apparatus | |
US2485757A (en) | Unwind reel control | |
US3697335A (en) | Method for annealing flexible metallic material | |
US3202800A (en) | Glass fiber bushing temperature controller | |
US3136876A (en) | Indicator and control system | |
US3165686A (en) | Motor control apparatus | |
US2343116A (en) | Electrical system | |
US4331698A (en) | Method for making a very pure silicon | |
US3715652A (en) | High speed buck-boost alternating current regulator | |
US2521639A (en) | Frequency regulator | |
US2194299A (en) | Frequency compensator | |
US2426937A (en) | Current control apparatus | |
US2958033A (en) | Regulating apparatus for generators | |
US3275419A (en) | Method and apparatus for producing elongated strip-shaped crystalline semiconductor bodies | |
GB931975A (en) | Method of drawing monocrystalline semi-conductor rods | |
GB1008300A (en) | Process for the manufacture of crystalline rods of semiconductor material | |
US4107448A (en) | Method and device for crucible-free floating zone melting |