US2913561A - Processing semiconductor rods - Google Patents

Processing semiconductor rods Download PDF

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Publication number
US2913561A
US2913561A US806174A US80617459A US2913561A US 2913561 A US2913561 A US 2913561A US 806174 A US806174 A US 806174A US 80617459 A US80617459 A US 80617459A US 2913561 A US2913561 A US 2913561A
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US
United States
Prior art keywords
rod
high frequency
coil
semiconductor
thickness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US806174A
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English (en)
Inventor
Rummel Theodor
Keller Wolfgang
Quast Hans-Friedrich
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens and Halske AG
Siemens AG
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Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
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Publication of US2913561A publication Critical patent/US2913561A/en
Anticipated expiration legal-status Critical
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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J11/00—Recovery or working-up of waste materials
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G63/00—Macromolecular compounds obtained by reactions forming a carboxylic ester link in the main chain of the macromolecule
    • C08G63/78—Preparation processes
    • C08G63/80—Solid-state polycondensation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28—Controlling or regulating
    • C30B13/30—Stabilisation or shape controlling of the molten zone, e.g. by concentrators, by electromagnetic fields; Controlling the section of the crystal
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B6/00—Heating by electric, magnetic or electromagnetic fields
    • H05B6/02—Induction heating
    • H05B6/22—Furnaces without an endless core
    • H05B6/30—Arrangements for remelting or zone melting
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J2367/00—Characterised by the use of polyesters obtained by reactions forming a carboxylic ester link in the main chain; Derivatives of such polymers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y10T117/1008—Apparatus with means for measuring, testing, or sensing with responsive control means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y10T117/1084—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone having details of a stabilizing feature
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y10T117/1088—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone including heating or cooling details

Definitions

  • This invention relates to the processing of semiconductor rods and is particularly concerned with automatic thickness regulation incident to zone drawing applied to semiconductor rods.
  • Theurer has described a method of zone drawing of semiconductor rods, especially silicon rods, comprising holding a silicon rod at its opposite ends, and drawing a molten zone produced by inductive heating through the medium of a high frequency coil, axially of the rod. Such method is employed for purifying semiconductor material and for producing mono-crystalline semiconductor rods.
  • the current fed from a high frequency current source to the coil surrounding the semiconductor rod which changes with changing thickness of the rod, is utilized for controlling the operation of a device adapted to change the spacing between the holding means for the semiconductor rod, such device moving the holding means respectively toward and away from each other, until the current flowing in the high frequency coil again assumes the desired value.
  • Fig. 3 illustrates a feature of the heating system.
  • variable yresistor 9 is at the start of the operation so adjusted that an anode current corresponding to the desired rod thickness causes a voltage drop at such resistor, which is equal to the voltage delivered by the battery 10, so that the polarized relay 11 willl be in a normal position with the contact spring 15 positioned as shown. If the thickness of the semiconductor rod and therewith the anode current of ⁇ the generator change in the course of the operation, the relay 11 will energize, causing the contact 15 to establish engagement with contact 16 or contact 17, depending upon the direction in which the current change took place.
  • rIi'he load resistance ZH may also be such as to permit working within the descending branch of the curve, about at the point B, that is, the power N delivered by the generator and therewith the anode current will become smaller when the rod becomes thinner and ZH increases.
  • the relay 11 vmust be oppositely poled as compared with the operationV which utilizes the working point A in the ascending branch of the curve.
  • the heating system shown in Fig. 3 is connected when it is desired to change the thickness of the semiconductor rod during the drawing.
  • a second coil 25 in series therewith.
  • the characteristic impedance of these two coils can again be compensated by means of a'eapacitor 26.
  • the inductance of the coil 25 may be varied, for example, by immersion into or withdrawal from the coil 25, of a metallic memberV 27, thereby affecting the operatively effective load resistance of the system between the terminals 12 and 13 and therewith the Vanode current and the thickness of the semiconductor rod.
  • a method according to claim 2 comprising connecting a further coil in series with said high frequency coil and changing the inductance of said further coil by disn placement of a metallic member relative'thereto, for the purpose of changing the thickness of the semiconductor rod during the processing thereof.
  • an Varl-rangement for automatically regulating the 4thickness of saidv semiconductor rod during the processing thereof comprising a device for varying the spacing between said rod-holding means to'effect respectively stretching and compressing of said rod, operating means for said device,A control means for governing said operating means, and Vcircuit means controlled by the current supplied by said high frequency source to said high frequency coil, which current changes with changing thickness ofpsaid molten zone, for governing theractuation of said control means.
  • a structure and cooperation of parts according to claim 10, comprising a capacitor connected in parallel with said high frequency coil.
  • control means comprises -a relay connected to the anode circuit of said high frequency current source for governing the actuation of said operating means to control the operation of said device to effect 6 compressing or stretching of said semiconductor rod responsive respectively to decrease and increase of the thickness of said molten zone.
  • said operating means comprises a reversible motor for controlling said device in two directions of motion thereof, and circuit means governed by said relay for controlling the directional rotation of said motor depending upon variations of the anode current of said high frequency current source.
  • a structure and cooperation of parts according to claim 19, comprising a capacitor and a resistor connected in series with said relay.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • General Induction Heating (AREA)
  • Silicon Compounds (AREA)
US806174A 1958-04-22 1959-04-13 Processing semiconductor rods Expired - Lifetime US2913561A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES57931A DE1153908B (de) 1958-04-22 1958-04-22 Verfahren und Vorrichtung zum tiegellosen Zonenschmelzen mit Abstandsaenderung der Stabenden

Publications (1)

Publication Number Publication Date
US2913561A true US2913561A (en) 1959-11-17

Family

ID=7492176

Family Applications (1)

Application Number Title Priority Date Filing Date
US806174A Expired - Lifetime US2913561A (en) 1958-04-22 1959-04-13 Processing semiconductor rods

Country Status (6)

Country Link
US (1) US2913561A (fr)
BE (1) BE578011A (fr)
CH (1) CH373903A (fr)
DE (1) DE1153908B (fr)
FR (1) FR1222189A (fr)
GB (1) GB900545A (fr)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2992311A (en) * 1960-09-28 1961-07-11 Siemens Ag Method and apparatus for floatingzone melting of semiconductor rods
US3046379A (en) * 1959-09-11 1962-07-24 Siemens Ag Method and apparatus for zone melting of semiconductor material
US3136876A (en) * 1960-10-26 1964-06-09 Clevite Corp Indicator and control system
US3160478A (en) * 1959-06-12 1964-12-08 Siemens Ag Apparatus for floating-zone melting
US3188735A (en) * 1960-06-27 1965-06-15 Laske Hans Method for producing very thin and bright metal wires and profiles
US3259467A (en) * 1962-12-07 1966-07-05 Siemens Ag Apparatus for pulling rod-shaped crystals of semiconductor material from a melt in acrucible
US3265470A (en) * 1959-08-17 1966-08-09 Siemens Ag Method and apparatus for floating-zone melting of semiconductor material
US3270177A (en) * 1960-01-20 1966-08-30 Merck & Co Inc Means and method for automatic zone refining a work piece
US3271551A (en) * 1963-09-06 1966-09-06 Siemens Ag Method for crucible free zone melting
US3275419A (en) * 1961-03-09 1966-09-27 Siemens Ag Method and apparatus for producing elongated strip-shaped crystalline semiconductor bodies
US3321299A (en) * 1964-10-13 1967-05-23 Monsanto Co Apparatus and process for preparing semiconductor rods
US3428436A (en) * 1963-12-16 1969-02-18 Monsanto Co Methods and apparatus for zone melting

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL274321A (fr) * 1961-02-07
NL6411697A (fr) * 1963-10-15 1965-04-20
GB2146186A (en) * 1983-08-25 1985-04-11 Electroheating Int Apparatus for electrically heating a metallic workpiece

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3160478A (en) * 1959-06-12 1964-12-08 Siemens Ag Apparatus for floating-zone melting
US3265470A (en) * 1959-08-17 1966-08-09 Siemens Ag Method and apparatus for floating-zone melting of semiconductor material
US3046379A (en) * 1959-09-11 1962-07-24 Siemens Ag Method and apparatus for zone melting of semiconductor material
US3270177A (en) * 1960-01-20 1966-08-30 Merck & Co Inc Means and method for automatic zone refining a work piece
US3188735A (en) * 1960-06-27 1965-06-15 Laske Hans Method for producing very thin and bright metal wires and profiles
US2992311A (en) * 1960-09-28 1961-07-11 Siemens Ag Method and apparatus for floatingzone melting of semiconductor rods
US3136876A (en) * 1960-10-26 1964-06-09 Clevite Corp Indicator and control system
US3275419A (en) * 1961-03-09 1966-09-27 Siemens Ag Method and apparatus for producing elongated strip-shaped crystalline semiconductor bodies
US3259467A (en) * 1962-12-07 1966-07-05 Siemens Ag Apparatus for pulling rod-shaped crystals of semiconductor material from a melt in acrucible
US3271551A (en) * 1963-09-06 1966-09-06 Siemens Ag Method for crucible free zone melting
US3428436A (en) * 1963-12-16 1969-02-18 Monsanto Co Methods and apparatus for zone melting
US3321299A (en) * 1964-10-13 1967-05-23 Monsanto Co Apparatus and process for preparing semiconductor rods

Also Published As

Publication number Publication date
GB900545A (en) 1962-07-04
BE578011A (fr) 1959-08-17
FR1222189A (fr) 1960-06-08
DE1153908B (de) 1963-09-05
CH373903A (de) 1963-12-15

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