US20180159014A1 - Flexible thermoelectric structure and method for manufacturing the same - Google Patents
Flexible thermoelectric structure and method for manufacturing the same Download PDFInfo
- Publication number
- US20180159014A1 US20180159014A1 US15/394,190 US201615394190A US2018159014A1 US 20180159014 A1 US20180159014 A1 US 20180159014A1 US 201615394190 A US201615394190 A US 201615394190A US 2018159014 A1 US2018159014 A1 US 2018159014A1
- Authority
- US
- United States
- Prior art keywords
- thermoelectric
- pattern
- porous
- polymer film
- flexible
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Images
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
- H05B3/34—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater flexible, e.g. heating nets or webs
- H05B3/36—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater flexible, e.g. heating nets or webs heating conductor embedded in insulating material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/85—Thermoelectric active materials
- H10N10/851—Thermoelectric active materials comprising inorganic compositions
- H10N10/852—Thermoelectric active materials comprising inorganic compositions comprising tellurium, selenium or sulfur
-
- H01L35/32—
-
- H01L35/16—
-
- H01L35/18—
-
- H01L35/34—
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/28—Applying non-metallic protective coatings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
- H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/85—Thermoelectric active materials
- H10N10/851—Thermoelectric active materials comprising inorganic compositions
- H10N10/853—Thermoelectric active materials comprising inorganic compositions comprising arsenic, antimony or bismuth
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/85—Thermoelectric active materials
- H10N10/857—Thermoelectric active materials comprising compositions changing continuously or discontinuously inside the material
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/13—Moulding and encapsulation; Deposition techniques; Protective layers
- H05K2203/1377—Protective layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/85—Thermoelectric active materials
Definitions
- Taiwan Application Serial Number 105140214 filed on Dec. 6, 2016, the disclosure of which is hereby incorporated by reference herein in its entirety.
- the technical field relates to a flexible thermoelectric structure and method for manufacturing the same.
- thermoelectric materials e.g. Bi 2 Te 3 -based material
- Bi 2 Te 3 -based material General low-temperature type thermoelectric materials
- a common thermoelectric pattern is formed by the following steps: mixing thermoelectric powder, curable resin, solvent, and other additives to form a printable thermoelectric ink, and then printing the ink on a flexible substrate.
- the printed thermoelectric pattern is bonded to the substrate by the curable and adhesive properties of the resin, and the thermoelectric powder is surrounded by the electrically insulated polymer resin.
- this kind of printed thermoelectric pattern has flexibility, but it also has problems such as insufficient electrical conductivity and thermoelectric properties.
- thermoelectric pattern with flexibility, electrical conductivity, and thermoelectric properties is called for.
- One embodiment of the disclosure provides a flexible thermoelectric structure, comprising: a porous thermoelectric pattern having a first surface and a second surface opposite to the first surface; and a polymer film covering the first surface of the porous thermoelectric pattern, wherein the polymer film has a first surface and a second surface opposite to the first surface; wherein the polymer film fills pores of the porous thermoelectric pattern, and the second surface of the polymer film is coplanar with the second surface of the porous thermoelectric pattern.
- One embodiment of the disclosure provides a method of manufacturing a flexible thermoelectric structure, comprising: forming a pattern of a thermoelectric ink on a substrate; thermal treating the thermoelectric ink to form a porous thermoelectric pattern on the substrate; coating a gel polymer on the porous thermoelectric pattern and the substrate, and curing the gel polymer to form a polymer film, wherein the porous thermoelectric pattern and the polymer film construct a flexible thermoelectric structure; and separating the substrate and the flexible thermoelectric structure, wherein the porous thermoelectric pattern has a first surface and a second surface opposite to the first surface; and wherein the polymer film has a first surface and a second surface opposite to the first surface; wherein the polymer film covers the first surface of the porous thermoelectric pattern and fills pores of the porous thermoelectric pattern, and the second surface of the polymer film is coplanar with a second surface of the porous thermoelectric pattern.
- FIGS. 1 to 5 show a process of manufacturing a flexible thermoelectric structure in one embodiment of the disclosure.
- thermoelectric material includes Bi 2 Te 3 -based material, PbTe-based material, GeTe-based material, Zn 4 Sb 3 -based material, CoSb 3 -based material, or the like.
- a p-type Bi 2 Te 3 -based material includes at least Bi or Sb, and at least Te or Se.
- an n-type Bi2Te3-based material may further include I, Cl, Hg, Br, Ag, Cu, or a combination thereof.
- the binder can be ethyl cellulose.
- the solvent is terpineol, ethanol, or a combination thereof.
- the thermoelectric ink is coated on a substrate to form a pattern of the thermoelectric ink 13 on the substrate 11 .
- the coating method can be screen printing, spray coating, or another enable coating method.
- the substrate 11 can be glass, quartz, stainless steel, or another thermal resistant and substantially rigid substrate.
- the substrate 11 is glass or another transparent substrate, which is beneficial to surveying the second surface of the pattern of the thermoelectric ink 13 , the second surface of a porous thermoelectric pattern 13 ′ (formed in the following steps), and the second surface of a polymer film (formed in subsequent steps).
- the pattern of the thermoelectric ink 13 is formed by screen printing, and the thermoelectric powder in the thermoelectric ink will be stacked horizontally by a blade in the screen printing.
- thermoelectric ink 13 was thermally treated to form a porous thermoelectric pattern 13 ′ on the substrate 11 , as shown in FIG. 2 .
- the horizontally stacked thermoelectric material in the thermoelectric ink is connected to form a continuous phase with a porous structure by the thermal treatment.
- a wetting angle between the thermoelectric material in the porous thermoelectric pattern 13 ′ and a gel polymer can be fine-tuned by the thermal treatment, so that pores of the porous thermoelectric pattern 13 ′ are easier to be filled by the gel polymer.
- the porous thermoelectric pattern 13 ′ has a thickness of 5 ⁇ m to 100 ⁇ m.
- the gel polymer e.g.
- thermoelectric pattern 13 ′ may permeate into a bottom of an overly thin thermoelectric pattern and covers too much second surface of the overly thin thermoelectric pattern, thereby increasing the contact resistivity of a P/N thermoelectric series connection in subsequent steps. If the porous thermoelectric pattern 13 ′ is too thick, a sintering necking phenomenon will occur after thermally treating the thermoelectric ink. However, the sheet-shaped thermoelectric material is inherently brittle, and the overly thick thermoelectric pattern not protected by sufficient polymer film (e.g. PI) cannot sustain a large curvature angle during the step of separating the flexible thermoelectric structure and the rigid substrate.
- sufficient polymer film e.g. PI
- the thermal treatment includes sequential drying, degreasing, and reduction sintering under a reducing atmosphere.
- the drying step is performed under normal atmosphere at a temperature of 80° C. to 120° C. for a period of 8 minutes to 12 minutes. If the drying step is performed at an overly low temperature and/or for an overly short period, some solvent will not be removed to easily crack the thermoelectric pattern in the following degreasing step due to fast gasification of the solvent in the film. If the drying step is performed at an overly high temperature and/or for an overly long period, the thermoelectric pattern will be easily cracked due to fast gasification of the solvent in the film.
- the degreasing step is performed under normal atmosphere at a temperature of 160° C.
- the degreasing step is performed at an overly low temperature and/or for an overly short period, the binder in the thermoelectric pattern will not be completely removed to form residual carbon.
- the residual carbon is not easily removed in the following reduction sintering, which may negatively influence the sintering effect of the thermoelectric powder and the electrical properties of the porous thermoelectric pattern.
- the degreasing step is performed at an overly high temperature and/or for an overly long period, the surface of the thermoelectric powder will be oxidized more due to the degreasing step is performed under the normal atmosphere.
- the reduction sintering is performed under a reduction atmosphere (e.g.
- the porous thermoelectric pattern has poor electrical properties. If the reduction sintering is performed at an overly high temperature, the alloy content ratios of the porous thermoelectric pattern will be easily changed. If the reduction sintering is performed for an overly long period, the porous thermoelectric pattern will gradually contract, deform, or crack.
- a gel polymer is coated on the porous thermoelectric pattern 13 ′ and the substrate 11 , and then cured to form a polymer film 15 , as shown in FIG. 3 .
- the porous thermoelectric pattern 13 ′ has a first surface and a second surface opposite to the first surface.
- the polymer film 15 has a first surface and a second surface opposite to the first surface.
- the polymer film 15 covers a first surface of the porous thermoelectric pattern 13 ′ and fills the pores of the porous thermoelectric pattern 13 ′, and the second surface of the polymer film 15 is coplanar with the second surface of the porous thermoelectric pattern 13 ′ when the flexible thermoelectric structure is not bended. Note that the polymer film 15 does not cover the second surface of the porous thermoelectric pattern 13 ′.
- the polymer film 15 can be composed of polyimide or polyvinylidene fluoride.
- the gel polymer includes not only the above composition, but also solvent and additives (optional) to fine-tune its properties.
- the solvent can be N-methyl-2-pyrrolidone (NMP).
- NMP N-methyl-2-pyrrolidone
- the gel polymer may have a solid content of 10 wt % to 30 wt %, and the gel polymer and the thermoelectric material of the porous thermoelectric pattern have a wetting angle of 15° to 45° therebetween. If the gel polymer has an overly high solid content and/or the gel polymer and the thermoelectric material have an overly large wetting angle therebetween, the gel polymer cannot easily fill the pores of the porous thermoelectric pattern. If the gel polymer has an overly low solid content and/or the gel polymer and the thermoelectric material have an overly little wetting angle therebetween, the gel polymer cannot easily cover the first surface of the porous thermoelectric pattern 13 ′
- the substrate 11 and the flexible thermoelectric structure 100 are subsequently separated.
- the separated flexible thermoelectric structure 100 is the product.
- the flexible thermoelectric structure 100 has a thickness of 10 micrometers to 150 micrometers.
- An overly thick flexible thermoelectric structure 100 means an overly thick polymer film (e.g. polyimide), which will not influence the thermoelectric properties of the product but increase the material cost and the device volume.
- An overly thin flexible thermoelectric structure 100 may lack the toughness provided by the polymer film, such that the porous thermoelectric pattern easily becomes damaged during use. In addition, an overly thin porous thermoelectric pattern has a lower thermoelectric transfer effect.
- the porous thermoelectric pattern in the flexible thermoelectric structure 100 is the p-type Bi 2 Te 3 -based material, and the flexible thermoelectric structure 100 has electrical conductivity of 400 S/cm to 500 S/cm, Seebeck coefficient of 200 mV/K to 210 mV/K, heat transfer coefficient of 0.3 W/mK to 0.6 W/mK, and thermoelectric figure of merit (ZT) of 0.6 to 0.8.
- a substrate made of the flexible thermoelectric structure 100 had a bendable radius of curvature greater than 0.5 cm.
- the porous thermoelectric pattern in the flexible thermoelectric structure 100 is the n-type Bi 2 Te 3 -based material, and the flexible thermoelectric structure 100 has an electrical conductivity of 250 S/cm to 350 S/cm, Seebeck coefficient of 150 mV/K to 160 mV/K, heat transfer coefficient of 0.3 W/mK to 0.6 W/mK, and thermoelectric figure of merit (ZT) of 0.4 to 0.7.
- a substrate made of the flexible thermoelectric structure 100 had a bendable radius of curvature greater than 0.5 cm.
- the described flexible thermoelectric structure can be applied in power modules, such as for capturing waste heat in the steel industry, petroleum industry, cement industry, metal industry, automobile industry, incineration, hot springs, or solar energy, or utilizing the temperature difference between the power module and the environment.
- Gel polyimide having a solid content of 19% (prepared as disclosed in U.S. Pub. No. 2011/0155235A1) was selected, and the gel polyimide and the thermoelectric material had a wetting angle of 40° ⁇ 2° therebetween (measured by sessile drop method).
- the gel polyimide was coated on the porous thermoelectric pattern (after the thermal treatment) and the glass substrate, in which the gel polyimide covered the porous thermoelectric pattern and filled into the pores of the porous thermoelectric pattern.
- the gel polyimide was then thermally treated at 210° C. for 1 hour to be cured, thereby obtaining a polyimide film.
- the second surface of the polyimide film was coplanar with the second surface of the porous thermoelectric pattern, and the polyimide film and the porous thermoelectric pattern constructed a flexible thermoelectric structure.
- the flexible thermoelectric structure was then separated from the glass substrate.
- the flexible thermoelectric structure had an electrical conductivity of 450 S/cm (measured by four-point probe to obtain the resistivity), Seebeck coefficient of 208 uV/K, heat transfer coefficient of 0.45 W/mK (measured by 3-omega method), and thermoelectric figure of merit (ZT) of 0.70.
- a substrate made of the flexible thermoelectric structure had bendable radius of curvature greater than 0.5 cm.
- the Seebeck coefficient was measured as described below: the test sample of the printed material was contacted by two probes (with a distance of 5 mm therebetween), in which one probe was heated, such that the two contacts had a temperature difference (DT) of 5° C. The voltage difference (DV) of the two contacts was then measured. DV was divided by DT (DV/DT) to obtain the Seebeck coefficient.
- Example 2 was similar to Example 1, and the differences in Example 2 were that the p-type thermoelectric powder of Bi 0.5 Sb 1.5 Te 3 was replaced with n-type thermoelectric powder of Bi 2 Te 2.7 Se 0.3 and 0.12 wt % BiI 3 , and the reduction sintering under hydrogen (400° C./30 minutes) in the thermal treatment for the pattern of the thermoelectric ink was replaced by a reduction sintering under hydrogen (400° C./15 minutes) and a sintering under nitrogen (400° C./15 minutes).
- the n-type thermoelectric powder of Bi 2 Te 2.7 Se 0.3 and 0.12 wt % BiI 3 was prepared as described below: Elements were stoichiometrically weighed, put into a quartz tube, vacuumed, and sealed. The elements were treated by zone melting to form a compound, and then cracked and ball milled to form the n-type thermoelectric powder for the printing process. In the flexible thermoelectric structure of Example 2, the polyimide filled into the pores of the porous thermoelectric pattern, and the second surface of the polyimide film was coplanar with the second surface of the porous thermoelectric pattern.
- the flexible thermoelectric structure had an electrical conductivity of 300 S/cm (measured by four-point probe to obtain the resistivity), Seebeck coefficient of ⁇ 156 uV/K, heat transfer coefficient of 0.40 W/mK (measured by 3-omega method), and thermoelectric figure of merit (ZT) of 0.40.
- a substrate made of the flexible thermoelectric structure had a bendable radius of curvature greater than 0.5 cm.
- the Seebeck coefficient was measured as described below: the test sample of the printed material was contacted by two probes (with a distance of 5 mm therebetween), in which one probe was heated, such that the two contacts had a temperature difference (DT) of 5° C. The voltage difference (DV) of the two contacts was then measured. DV was divided by DT (DV/DT) to obtain the Seebeck coefficient.
- the gel polyimide in Example 1 was directly formed on the glass substrate, and then heated to be cured for forming a polyimide film.
- the thermoelectric ink in Example 1 was printed on the polyimide film by screen printing to form a pattern of the thermoelectric ink.
- the pattern of the thermoelectric ink was thermally treated to form a porous thermoelectric pattern.
- the thermal treatment included sequentially drying (100° C. /10 minutes), degreasing (200° C./30 minutes), and reduction sintering under hydrogen (400° C./30 minutes).
- the porous thermoelectric pattern on the polyimide film was cracked after being bended, meaning that the structure of the porous thermoelectric pattern and the polyimide film was not flexible.
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Measuring Temperature Or Quantity Of Heat (AREA)
- Manufacture Of Porous Articles, And Recovery And Treatment Of Waste Products (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Description
- The present application is based on, and claims priority from, Taiwan Application Serial Number 105140214, filed on Dec. 6, 2016, the disclosure of which is hereby incorporated by reference herein in its entirety.
- The technical field relates to a flexible thermoelectric structure and method for manufacturing the same.
- General low-temperature type thermoelectric materials (e.g. Bi2Te3-based material) are inherently brittle, and the surface of the thermoelectric material can easily become oxidized by coming into contact with air. A common thermoelectric pattern is formed by the following steps: mixing thermoelectric powder, curable resin, solvent, and other additives to form a printable thermoelectric ink, and then printing the ink on a flexible substrate. The printed thermoelectric pattern is bonded to the substrate by the curable and adhesive properties of the resin, and the thermoelectric powder is surrounded by the electrically insulated polymer resin. As such, this kind of printed thermoelectric pattern has flexibility, but it also has problems such as insufficient electrical conductivity and thermoelectric properties.
- Accordingly, a novel method of manufacturing a thermoelectric pattern with flexibility, electrical conductivity, and thermoelectric properties is called for.
- One embodiment of the disclosure provides a flexible thermoelectric structure, comprising: a porous thermoelectric pattern having a first surface and a second surface opposite to the first surface; and a polymer film covering the first surface of the porous thermoelectric pattern, wherein the polymer film has a first surface and a second surface opposite to the first surface; wherein the polymer film fills pores of the porous thermoelectric pattern, and the second surface of the polymer film is coplanar with the second surface of the porous thermoelectric pattern.
- One embodiment of the disclosure provides a method of manufacturing a flexible thermoelectric structure, comprising: forming a pattern of a thermoelectric ink on a substrate; thermal treating the thermoelectric ink to form a porous thermoelectric pattern on the substrate; coating a gel polymer on the porous thermoelectric pattern and the substrate, and curing the gel polymer to form a polymer film, wherein the porous thermoelectric pattern and the polymer film construct a flexible thermoelectric structure; and separating the substrate and the flexible thermoelectric structure, wherein the porous thermoelectric pattern has a first surface and a second surface opposite to the first surface; and wherein the polymer film has a first surface and a second surface opposite to the first surface; wherein the polymer film covers the first surface of the porous thermoelectric pattern and fills pores of the porous thermoelectric pattern, and the second surface of the polymer film is coplanar with a second surface of the porous thermoelectric pattern.
- A detailed description is given in the following embodiments with reference to the accompanying drawings.
- The disclosure can be more fully understood by reading the subsequent detailed description and examples with references made to the accompanying drawings, wherein:
-
FIGS. 1 to 5 show a process of manufacturing a flexible thermoelectric structure in one embodiment of the disclosure. - In the following detailed description, for the purposes of explanation, numerous specific details are set forth in order to provide a thorough understanding of the disclosed embodiments. It will be apparent, however, that one or more embodiments may be practiced without these specific details. In other instances, well-known structures and devices are shown schematically in order to simplify the drawing.
- In one embodiment, a method of manufacturing a flexible thermoelectric structure is provided. First, a thermoelectric material, a binder, and a solvent are mixed to form a thermoelectric ink. In one embodiment, the thermoelectric material includes Bi2Te3-based material, PbTe-based material, GeTe-based material, Zn4Sb3-based material, CoSb3-based material, or the like. For example, a p-type Bi2Te3-based material includes at least Bi or Sb, and at least Te or Se. For example, an n-type Bi2Te3-based material may further include I, Cl, Hg, Br, Ag, Cu, or a combination thereof. In one embodiment, the binder can be ethyl cellulose. In one embodiment, the solvent is terpineol, ethanol, or a combination thereof.
- As shown in
FIG. 1 , the thermoelectric ink is coated on a substrate to form a pattern of thethermoelectric ink 13 on thesubstrate 11. In one embodiment, the coating method can be screen printing, spray coating, or another enable coating method. In one embodiment, thesubstrate 11 can be glass, quartz, stainless steel, or another thermal resistant and substantially rigid substrate. In one embodiment, thesubstrate 11 is glass or another transparent substrate, which is beneficial to surveying the second surface of the pattern of thethermoelectric ink 13, the second surface of a porousthermoelectric pattern 13′ (formed in the following steps), and the second surface of a polymer film (formed in subsequent steps). In one embodiment, the pattern of thethermoelectric ink 13 is formed by screen printing, and the thermoelectric powder in the thermoelectric ink will be stacked horizontally by a blade in the screen printing. - Subsequently, the pattern of the
thermoelectric ink 13 was thermally treated to form a porousthermoelectric pattern 13′ on thesubstrate 11, as shown inFIG. 2 . In one embodiment, the horizontally stacked thermoelectric material in the thermoelectric ink is connected to form a continuous phase with a porous structure by the thermal treatment. In addition, a wetting angle between the thermoelectric material in the porousthermoelectric pattern 13′ and a gel polymer (described below) can be fine-tuned by the thermal treatment, so that pores of the porousthermoelectric pattern 13′ are easier to be filled by the gel polymer. In one embodiment, the porousthermoelectric pattern 13′ has a thickness of 5 μm to 100 μm. The gel polymer (e.g. PI) may permeate into a bottom of an overly thin thermoelectric pattern and covers too much second surface of the overly thin thermoelectric pattern, thereby increasing the contact resistivity of a P/N thermoelectric series connection in subsequent steps. If the porousthermoelectric pattern 13′ is too thick, a sintering necking phenomenon will occur after thermally treating the thermoelectric ink. However, the sheet-shaped thermoelectric material is inherently brittle, and the overly thick thermoelectric pattern not protected by sufficient polymer film (e.g. PI) cannot sustain a large curvature angle during the step of separating the flexible thermoelectric structure and the rigid substrate. - In one embodiment, the thermal treatment includes sequential drying, degreasing, and reduction sintering under a reducing atmosphere. In one embodiment, the drying step is performed under normal atmosphere at a temperature of 80° C. to 120° C. for a period of 8 minutes to 12 minutes. If the drying step is performed at an overly low temperature and/or for an overly short period, some solvent will not be removed to easily crack the thermoelectric pattern in the following degreasing step due to fast gasification of the solvent in the film. If the drying step is performed at an overly high temperature and/or for an overly long period, the thermoelectric pattern will be easily cracked due to fast gasification of the solvent in the film. In one embodiment, the degreasing step is performed under normal atmosphere at a temperature of 160° C. to 240° C. for a period of 24 minutes to 36 minutes. If the degreasing step is performed at an overly low temperature and/or for an overly short period, the binder in the thermoelectric pattern will not be completely removed to form residual carbon. The residual carbon is not easily removed in the following reduction sintering, which may negatively influence the sintering effect of the thermoelectric powder and the electrical properties of the porous thermoelectric pattern. If the degreasing step is performed at an overly high temperature and/or for an overly long period, the surface of the thermoelectric powder will be oxidized more due to the degreasing step is performed under the normal atmosphere. In one embodiment, the reduction sintering is performed under a reduction atmosphere (e.g. hydrogen, a mixture of hydrogen and nitrogen such as 5% H2 in N2, or a mixture of hydrogen and argon such as 5% H2 in Ar) at a temperature of 320° C. to 480° C. for a period of 24 minutes to 36 minutes. If the reduction sintering is performed at an overly low temperature and/or for an overly short period, the sintering effect will not be sufficient and the de-oxidation on the surface of the porous thermoelectric pattern will not be complete. As a result, the porous thermoelectric pattern has poor electrical properties. If the reduction sintering is performed at an overly high temperature, the alloy content ratios of the porous thermoelectric pattern will be easily changed. If the reduction sintering is performed for an overly long period, the porous thermoelectric pattern will gradually contract, deform, or crack.
- Subsequently, a gel polymer is coated on the porous
thermoelectric pattern 13′ and thesubstrate 11, and then cured to form apolymer film 15, as shown inFIG. 3 . The porousthermoelectric pattern 13′ has a first surface and a second surface opposite to the first surface. Thepolymer film 15 has a first surface and a second surface opposite to the first surface. Thepolymer film 15 covers a first surface of the porousthermoelectric pattern 13′ and fills the pores of the porousthermoelectric pattern 13′, and the second surface of thepolymer film 15 is coplanar with the second surface of the porousthermoelectric pattern 13′ when the flexible thermoelectric structure is not bended. Note that thepolymer film 15 does not cover the second surface of the porousthermoelectric pattern 13′. - The
polymer film 15 can be composed of polyimide or polyvinylidene fluoride. In one embodiment, the gel polymer includes not only the above composition, but also solvent and additives (optional) to fine-tune its properties. In one embodiment, the solvent can be N-methyl-2-pyrrolidone (NMP). For example, the gel polymer may have a solid content of 10 wt % to 30 wt %, and the gel polymer and the thermoelectric material of the porous thermoelectric pattern have a wetting angle of 15° to 45° therebetween. If the gel polymer has an overly high solid content and/or the gel polymer and the thermoelectric material have an overly large wetting angle therebetween, the gel polymer cannot easily fill the pores of the porous thermoelectric pattern. If the gel polymer has an overly low solid content and/or the gel polymer and the thermoelectric material have an overly little wetting angle therebetween, the gel polymer cannot easily cover the first surface of the porousthermoelectric pattern 13′ and even cannot form a film. - In one embodiment, the gel polymer is cured by thermal treatment at a temperature of 170° C. to 250° C. for a period of 30 minutes to 2 hours. If the thermal treatment is performed at an overly high temperature and/or for an overly long period, the polymer (e.g. polyimide) will not sustain the temperature and therefore being deteriorated or brittle. As such, the polymer film is brittle and cracked or cannot be separated from the substrate. If the thermal treatment is performed at an overly low temperature and/or for an overly short period, the
polymer film 15 cannot be completely cured. After the described steps, the porousthermoelectric pattern 13′ and the polymer film construct a flexiblethermoelectric structure 100. - As shown in
FIG. 4 , thesubstrate 11 and the flexiblethermoelectric structure 100 are subsequently separated. As shown inFIG. 5 , the separated flexiblethermoelectric structure 100 is the product. In one embodiment, the flexiblethermoelectric structure 100 has a thickness of 10 micrometers to 150 micrometers. An overly thick flexiblethermoelectric structure 100 means an overly thick polymer film (e.g. polyimide), which will not influence the thermoelectric properties of the product but increase the material cost and the device volume. An overly thin flexiblethermoelectric structure 100 may lack the toughness provided by the polymer film, such that the porous thermoelectric pattern easily becomes damaged during use. In addition, an overly thin porous thermoelectric pattern has a lower thermoelectric transfer effect. - In one embodiment, the porous thermoelectric pattern in the flexible
thermoelectric structure 100 is the p-type Bi2Te3-based material, and the flexiblethermoelectric structure 100 has electrical conductivity of 400 S/cm to 500 S/cm, Seebeck coefficient of 200 mV/K to 210 mV/K, heat transfer coefficient of 0.3 W/mK to 0.6 W/mK, and thermoelectric figure of merit (ZT) of 0.6 to 0.8. A substrate made of the flexiblethermoelectric structure 100 had a bendable radius of curvature greater than 0.5 cm. In one embodiment, the porous thermoelectric pattern in the flexiblethermoelectric structure 100 is the n-type Bi2Te3-based material, and the flexiblethermoelectric structure 100 has an electrical conductivity of 250 S/cm to 350 S/cm, Seebeck coefficient of 150 mV/K to 160 mV/K, heat transfer coefficient of 0.3 W/mK to 0.6 W/mK, and thermoelectric figure of merit (ZT) of 0.4 to 0.7. A substrate made of the flexiblethermoelectric structure 100 had a bendable radius of curvature greater than 0.5 cm. The described flexible thermoelectric structure can be applied in power modules, such as for capturing waste heat in the steel industry, petroleum industry, cement industry, metal industry, automobile industry, incineration, hot springs, or solar energy, or utilizing the temperature difference between the power module and the environment. - Below, exemplary embodiments will be described in detail with reference to accompanying drawings so as to be easily realized by a person having ordinary knowledge in the art. The inventive concept may be embodied in various forms without being limited to the exemplary embodiments set forth herein. Descriptions of well-known parts are omitted for clarity, and like reference numerals refer to like elements throughout.
- Elements were stoichiometrically weighed, put into a quartz tube, vacuumed, and sealed. The elements were treated by zone melting to form a compound, and then cracked and ball milled to form p-type thermoelectric powder of Bi0.5 Sb1.5Te3 for a printing process. 40 g of the p-type thermoelectric powder, 2.5 g of the ethyl cellulose (Aqualon EC-N100) serving as a binder, and 7.5 g of terpineol serving as solvent were mixed to form a thermoelectric ink. The thermoelectric ink was printed on a glass substrate by screen printing, thereby forming a pattern of the thermoelectric ink. In the pattern of the thermoelectric ink, the thermoelectric powder was stacked horizontally. The pattern of the thermoelectric ink was then thermally treated to form a porous thermoelectric pattern. The thermal treatment included sequentially drying (100° C./10 minutes), degreasing (200° C./30 minutes), and reduction sintering under hydrogen atmosphere (400° C./30 minutes). After the thermal treatment, the horizontally stacked thermoelectric powder was connected to each other to form a continuous phase.
- Gel polyimide having a solid content of 19% (prepared as disclosed in U.S. Pub. No. 2011/0155235A1) was selected, and the gel polyimide and the thermoelectric material had a wetting angle of 40°±2° therebetween (measured by sessile drop method). The gel polyimide was coated on the porous thermoelectric pattern (after the thermal treatment) and the glass substrate, in which the gel polyimide covered the porous thermoelectric pattern and filled into the pores of the porous thermoelectric pattern. The gel polyimide was then thermally treated at 210° C. for 1 hour to be cured, thereby obtaining a polyimide film. Therefore, the second surface of the polyimide film was coplanar with the second surface of the porous thermoelectric pattern, and the polyimide film and the porous thermoelectric pattern constructed a flexible thermoelectric structure. The flexible thermoelectric structure was then separated from the glass substrate. The flexible thermoelectric structure had an electrical conductivity of 450 S/cm (measured by four-point probe to obtain the resistivity), Seebeck coefficient of 208 uV/K, heat transfer coefficient of 0.45 W/mK (measured by 3-omega method), and thermoelectric figure of merit (ZT) of 0.70. A substrate made of the flexible thermoelectric structure had bendable radius of curvature greater than 0.5 cm. The Seebeck coefficient was measured as described below: the test sample of the printed material was contacted by two probes (with a distance of 5 mm therebetween), in which one probe was heated, such that the two contacts had a temperature difference (DT) of 5° C. The voltage difference (DV) of the two contacts was then measured. DV was divided by DT (DV/DT) to obtain the Seebeck coefficient.
- Example 2 was similar to Example 1, and the differences in Example 2 were that the p-type thermoelectric powder of Bi0.5Sb1.5Te3 was replaced with n-type thermoelectric powder of Bi2Te2.7Se0.3 and 0.12 wt % BiI3, and the reduction sintering under hydrogen (400° C./30 minutes) in the thermal treatment for the pattern of the thermoelectric ink was replaced by a reduction sintering under hydrogen (400° C./15 minutes) and a sintering under nitrogen (400° C./15 minutes). The n-type thermoelectric powder of Bi2Te2.7Se0.3 and 0.12 wt % BiI3 was prepared as described below: Elements were stoichiometrically weighed, put into a quartz tube, vacuumed, and sealed. The elements were treated by zone melting to form a compound, and then cracked and ball milled to form the n-type thermoelectric powder for the printing process. In the flexible thermoelectric structure of Example 2, the polyimide filled into the pores of the porous thermoelectric pattern, and the second surface of the polyimide film was coplanar with the second surface of the porous thermoelectric pattern. The flexible thermoelectric structure had an electrical conductivity of 300 S/cm (measured by four-point probe to obtain the resistivity), Seebeck coefficient of −156 uV/K, heat transfer coefficient of 0.40 W/mK (measured by 3-omega method), and thermoelectric figure of merit (ZT) of 0.40. A substrate made of the flexible thermoelectric structure had a bendable radius of curvature greater than 0.5 cm. The Seebeck coefficient was measured as described below: the test sample of the printed material was contacted by two probes (with a distance of 5 mm therebetween), in which one probe was heated, such that the two contacts had a temperature difference (DT) of 5° C. The voltage difference (DV) of the two contacts was then measured. DV was divided by DT (DV/DT) to obtain the Seebeck coefficient.
- The gel polyimide in Example 1 was directly formed on the glass substrate, and then heated to be cured for forming a polyimide film. The thermoelectric ink in Example 1 was printed on the polyimide film by screen printing to form a pattern of the thermoelectric ink. The pattern of the thermoelectric ink was thermally treated to form a porous thermoelectric pattern. The thermal treatment included sequentially drying (100° C. /10 minutes), degreasing (200° C./30 minutes), and reduction sintering under hydrogen (400° C./30 minutes). The porous thermoelectric pattern on the polyimide film was cracked after being bended, meaning that the structure of the porous thermoelectric pattern and the polyimide film was not flexible.
- It will be apparent to those skilled in the art that various modifications and variations can be made to the disclosed methods and materials. It is intended that the specification and examples be considered as exemplary only, with the true scope of the disclosure being indicated by the following claims and their equivalents.
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US16/862,724 US11812663B2 (en) | 2016-12-06 | 2020-04-30 | Method for manufacturing flexible thermoelectric structure |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW105140214A TWI608639B (en) | 2016-12-06 | 2016-12-06 | Flexible thermoelectric structure and method for manufacturing the same |
TW105140214 | 2016-12-06 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US16/862,724 Division US11812663B2 (en) | 2016-12-06 | 2020-04-30 | Method for manufacturing flexible thermoelectric structure |
Publications (1)
Publication Number | Publication Date |
---|---|
US20180159014A1 true US20180159014A1 (en) | 2018-06-07 |
Family
ID=61230849
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US15/394,190 Abandoned US20180159014A1 (en) | 2016-12-06 | 2016-12-29 | Flexible thermoelectric structure and method for manufacturing the same |
US16/862,724 Active 2039-04-29 US11812663B2 (en) | 2016-12-06 | 2020-04-30 | Method for manufacturing flexible thermoelectric structure |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US16/862,724 Active 2039-04-29 US11812663B2 (en) | 2016-12-06 | 2020-04-30 | Method for manufacturing flexible thermoelectric structure |
Country Status (3)
Country | Link |
---|---|
US (2) | US20180159014A1 (en) |
CN (1) | CN108156678B (en) |
TW (1) | TWI608639B (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10411222B2 (en) * | 2017-05-23 | 2019-09-10 | University Of Maryland, College Park | Transparent hybrid substrates, devices employing such substrates, and methods for fabrication and use thereof |
WO2020071396A1 (en) * | 2018-10-03 | 2020-04-09 | リンテック株式会社 | Method for manufacturing intermediate body for thermoelectric conversion module |
KR20200108675A (en) * | 2019-03-11 | 2020-09-21 | 한국과학기술연구원 | Wearable structure with thermoelectric elements and method thereof |
WO2021153668A1 (en) * | 2020-01-29 | 2021-08-05 | 旭化成株式会社 | Transparent heater |
US11877391B2 (en) | 2018-07-30 | 2024-01-16 | Asahi Kasei Kabushiki Kaisha | Conductive film and conductive film roll, electronic paper, touch panel and flat-panel display comprising the same |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5040381A (en) * | 1990-04-19 | 1991-08-20 | Prime Computer, Inc. | Apparatus for cooling circuits |
US6348650B1 (en) * | 1999-03-24 | 2002-02-19 | Ishizuka Electronics Corporation | Thermopile infrared sensor and process for producing the same |
US20080173344A1 (en) * | 2004-12-07 | 2008-07-24 | Minjuan Zhang | Nanostructured bulk thermoelectric material |
US20140060601A1 (en) * | 2012-08-29 | 2014-03-06 | International Business Machines Corporation | Thermoelectric elements |
US20150130012A1 (en) * | 2013-11-08 | 2015-05-14 | Electronics And Telecommunications Research Institute | Thermoelectric device and method of manufacturing the same |
US9082930B1 (en) * | 2012-10-25 | 2015-07-14 | Alphabet Energy, Inc. | Nanostructured thermolectric elements and methods of making the same |
Family Cites Families (47)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2648828B2 (en) * | 1991-09-19 | 1997-09-03 | 光照 木村 | Micro heater |
TWI243004B (en) | 2003-12-31 | 2005-11-01 | Ind Tech Res Inst | Method for manufacturing low-temperature highly conductive layer and its structure |
JP2006332592A (en) * | 2005-04-28 | 2006-12-07 | Ricoh Co Ltd | Electric component, method of forming conductive pattern, and inkjet head |
CN101384425A (en) * | 2006-02-20 | 2009-03-11 | 大赛璐化学工业株式会社 | Porous film and multilayer assembly using the same |
CN101154643B (en) * | 2006-09-25 | 2010-09-29 | 财团法人工业技术研究院 | Substrate structure and its manufacturing method |
US7763791B2 (en) | 2006-12-29 | 2010-07-27 | Caterpillar Inc | Thin film with oriented cracks on a flexible substrate |
CN101376989A (en) * | 2007-08-28 | 2009-03-04 | 汉达精密电子(昆山)有限公司 | On micro-arc oxidation metallic surface pattern preparing method |
TWI423930B (en) | 2008-12-31 | 2014-01-21 | Ind Tech Res Inst | Nano metal solution, nanometal complex grains and manufacturing method of metal film |
CN101798683B (en) | 2009-02-11 | 2012-05-30 | 财团法人工业技术研究院 | Nano metal solution, nano metal composite particles and metal film manufacturing method |
JP2010245299A (en) | 2009-04-06 | 2010-10-28 | Three M Innovative Properties Co | Composite thermoelectric material and method of manufacturing the same |
TWI383950B (en) | 2009-04-22 | 2013-02-01 | Ind Tech Res Inst | Method of forming nanometer-scale point materials |
CN101908388B (en) | 2009-06-04 | 2013-01-23 | 财团法人工业技术研究院 | Forming method of nano-dotted materials |
CN101931043B (en) | 2009-06-19 | 2013-03-20 | 清华大学 | Thermoelectric conversion material |
TWI415139B (en) | 2009-11-02 | 2013-11-11 | Ind Tech Res Inst | Electrically conductive composition and fabrication method thereof |
TWI481087B (en) | 2010-01-20 | 2015-04-11 | Nat I Lan University | Flexible thermoelectric energy converter and its manufacturing method |
FR2968598B1 (en) * | 2010-12-10 | 2013-01-04 | Commissariat Energie Atomique | DEPOSIT OF THERMOELECTRIC MATERIALS BY PRINTING |
TWI471072B (en) | 2010-12-30 | 2015-01-21 | Ind Tech Res Inst | Substrate assembly containing conductive film and fabrication method thereof |
CN102555323B (en) | 2010-12-31 | 2015-01-21 | 财团法人工业技术研究院 | Base board combination with conducting film layer and manufacture method thereof |
CA2827978A1 (en) | 2011-02-22 | 2012-08-30 | Purdue Research Foundation | Flexible polymer-based thermoelectric materials and fabrics incorporating the same |
CN103459549A (en) * | 2011-03-31 | 2013-12-18 | 松下电器产业株式会社 | Fluorescent film and display film |
CN103688379A (en) * | 2011-07-20 | 2014-03-26 | 中弥浩明 | Thermoelectric conversion element and thermoelectric conversion power generation system |
US20130218241A1 (en) | 2012-02-16 | 2013-08-22 | Nanohmics, Inc. | Membrane-Supported, Thermoelectric Compositions |
JP6127041B2 (en) | 2012-03-21 | 2017-05-10 | リンテック株式会社 | Thermoelectric conversion material and manufacturing method thereof |
WO2013146750A1 (en) * | 2012-03-30 | 2013-10-03 | アルプス電気株式会社 | Conducting pattern forming substrate fabrication method |
WO2013161645A1 (en) * | 2012-04-27 | 2013-10-31 | リンテック株式会社 | Thermoelectric conversion material and method for manufacturing same |
US20140097002A1 (en) * | 2012-10-05 | 2014-04-10 | Tyco Electronics Amp Gmbh | Electrical components and methods and systems of manufacturing electrical components |
US20140116491A1 (en) * | 2012-10-29 | 2014-05-01 | Alphabet Energy, Inc. | Bulk-size nanostructured materials and methods for making the same by sintering nanowires |
TWI478405B (en) * | 2012-12-13 | 2015-03-21 | Ind Tech Res Inst | Structure of thermoelectric film |
US8956905B2 (en) | 2013-02-01 | 2015-02-17 | Berken Energy Llc | Methods for thick films thermoelectric device fabrication |
TWI524991B (en) | 2013-02-04 | 2016-03-11 | Toyo Boseki | A laminated body, a method for producing a laminated body, and a method for manufacturing the flexible electronic device |
JP6297025B2 (en) * | 2013-03-21 | 2018-03-20 | 国立大学法人長岡技術科学大学 | Thermoelectric conversion element |
JP5960178B2 (en) * | 2013-03-28 | 2016-08-02 | 富士フイルム株式会社 | Method for producing thermoelectric conversion element and method for producing dispersion for thermoelectric conversion layer |
CN203288656U (en) * | 2013-06-09 | 2013-11-13 | 中国华能集团清洁能源技术研究院有限公司 | A micro thermoelectric device |
WO2014201430A1 (en) | 2013-06-14 | 2014-12-18 | The Regents Of The University Of California | Dispenser printed mechanically-alloyed p-type flexible thermoelectric generators |
JP5712340B1 (en) | 2013-08-09 | 2015-05-07 | リンテック株式会社 | Thermoelectric conversion material and manufacturing method thereof |
TWI589178B (en) * | 2013-08-19 | 2017-06-21 | 友達光電股份有限公司 | Heater and haeting method |
CN203490670U (en) * | 2013-09-27 | 2014-03-19 | 南昌欧菲光科技有限公司 | Touch control display module and electronic device |
KR101493797B1 (en) | 2013-10-18 | 2015-02-17 | 한국과학기술원 | Flexible thermoelectric device using mesh substrate and fabricating method thereof |
JP6297821B2 (en) | 2013-11-15 | 2018-03-20 | 株式会社小松製作所 | Work vehicle |
TW201533937A (en) | 2014-02-20 | 2015-09-01 | Univ Feng Chia | Flexible thermoelectric material film and manufacturing method thereof |
TWI617223B (en) | 2014-02-25 | 2018-03-01 | 財團法人工業技術研究院 | Flexible substrate embedded with wires and method for fabricating the same |
CN104869754B (en) | 2014-02-25 | 2018-06-26 | 财团法人工业技术研究院 | Flexible substrate embedded with conducting wire and manufacturing method thereof |
CN105320313B (en) * | 2014-05-28 | 2020-07-21 | 群创光电股份有限公司 | Touch panel |
KR101636908B1 (en) | 2014-05-30 | 2016-07-06 | 삼성전자주식회사 | Stretchable thermoelectric material and thermoelectric device including the same |
CN104064516B (en) * | 2014-07-17 | 2017-12-26 | 深圳市华星光电技术有限公司 | Array base palte and its manufacture method |
WO2017082558A1 (en) * | 2015-11-09 | 2017-05-18 | Kookmin University Industry Academy Cooperation Foundation | Thermoelectric material, thermoelectric module and thermoelectric device including the same |
TWI538581B (en) | 2015-11-20 | 2016-06-11 | 財團法人工業技術研究院 | Metal conducting structure and wiring structure |
-
2016
- 2016-12-06 TW TW105140214A patent/TWI608639B/en active
- 2016-12-26 CN CN201611216706.7A patent/CN108156678B/en active Active
- 2016-12-29 US US15/394,190 patent/US20180159014A1/en not_active Abandoned
-
2020
- 2020-04-30 US US16/862,724 patent/US11812663B2/en active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5040381A (en) * | 1990-04-19 | 1991-08-20 | Prime Computer, Inc. | Apparatus for cooling circuits |
US6348650B1 (en) * | 1999-03-24 | 2002-02-19 | Ishizuka Electronics Corporation | Thermopile infrared sensor and process for producing the same |
US20080173344A1 (en) * | 2004-12-07 | 2008-07-24 | Minjuan Zhang | Nanostructured bulk thermoelectric material |
US20140060601A1 (en) * | 2012-08-29 | 2014-03-06 | International Business Machines Corporation | Thermoelectric elements |
US9082930B1 (en) * | 2012-10-25 | 2015-07-14 | Alphabet Energy, Inc. | Nanostructured thermolectric elements and methods of making the same |
US20150130012A1 (en) * | 2013-11-08 | 2015-05-14 | Electronics And Telecommunications Research Institute | Thermoelectric device and method of manufacturing the same |
Non-Patent Citations (1)
Title |
---|
Lee et al., (Thermoelectric properties of screen-printed ZnSb film), 2011 * |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10411222B2 (en) * | 2017-05-23 | 2019-09-10 | University Of Maryland, College Park | Transparent hybrid substrates, devices employing such substrates, and methods for fabrication and use thereof |
US11877391B2 (en) | 2018-07-30 | 2024-01-16 | Asahi Kasei Kabushiki Kaisha | Conductive film and conductive film roll, electronic paper, touch panel and flat-panel display comprising the same |
WO2020071396A1 (en) * | 2018-10-03 | 2020-04-09 | リンテック株式会社 | Method for manufacturing intermediate body for thermoelectric conversion module |
JPWO2020071396A1 (en) * | 2018-10-03 | 2021-09-02 | リンテック株式会社 | Manufacturing method of intermediate for thermoelectric conversion module |
US20220045258A1 (en) * | 2018-10-03 | 2022-02-10 | Lintec Corporation | Method for manufacturing intermediate body for thermoelectric conversion module |
JP7386801B2 (en) | 2018-10-03 | 2023-11-27 | リンテック株式会社 | Method for manufacturing intermediate for thermoelectric conversion module |
KR20200108675A (en) * | 2019-03-11 | 2020-09-21 | 한국과학기술연구원 | Wearable structure with thermoelectric elements and method thereof |
KR102332127B1 (en) * | 2019-03-11 | 2021-11-30 | 한국과학기술연구원 | Wearable structure with thermoelectric elements and method thereof |
WO2021153668A1 (en) * | 2020-01-29 | 2021-08-05 | 旭化成株式会社 | Transparent heater |
JPWO2021153668A1 (en) * | 2020-01-29 | 2021-08-05 | ||
JP7305805B2 (en) | 2020-01-29 | 2023-07-10 | 旭化成株式会社 | transparent heater |
Also Published As
Publication number | Publication date |
---|---|
US20200259063A1 (en) | 2020-08-13 |
TWI608639B (en) | 2017-12-11 |
CN108156678A (en) | 2018-06-12 |
US11812663B2 (en) | 2023-11-07 |
CN108156678B (en) | 2021-09-14 |
TW201822387A (en) | 2018-06-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US11812663B2 (en) | Method for manufacturing flexible thermoelectric structure | |
Zhou et al. | Solution-Processed Antimony Selenide Heterojunction Solar Cells. | |
US20120024332A1 (en) | Thermoelectric material coated with a protective layer | |
TW201630745A (en) | Peltier cooling element and method for manufacturing same | |
Sugahara et al. | Fabrication with semiconductor packaging technologies and characterization of a large‐scale flexible thermoelectric module | |
KR101493792B1 (en) | Flexible thermoelectric device and fabricating method thereof | |
US20110030759A1 (en) | Method for manufacturing solar cell, method for manufacturing solar cell module, and solar cell module | |
US20150228879A1 (en) | Thermoelectric conversion material and production method therefor | |
US20120148764A1 (en) | Deposition of thermoelectric materials by printing | |
US11424397B2 (en) | Electrode material for thermoelectric conversion modules and thermoelectric conversion module using same | |
US20130118541A1 (en) | Thermoelectric module and method of manufacturing the same | |
US20110272027A1 (en) | Solar photovoltaic devices and methods of making them | |
Sutherland et al. | Vacuum‐free and solvent‐free deposition of electrodes for roll‐to‐roll fabricated perovskite solar cells | |
Choi et al. | UV‐curable silver electrode for screen‐printed thermoelectric generator | |
CN103153850A (en) | Method for manufacturing infrared sensor material, infrared sensor material, infrared sensor element and infrared image sensor | |
TWI783078B (en) | Conductive paste | |
Hamada et al. | Fabrication and characterization of roll-type thin-film thermoelectric generators | |
Jang et al. | Thermoelectric properties enhancement of p-type composite films using wood-based binder and mechanical pressing | |
US20170345989A1 (en) | Methods of fabrication of flexible micro-thermoelectric generators | |
JPH06318724A (en) | Electrode and photovoltaic element | |
TW201119048A (en) | Method for forming a back electrode used in a thin-film solar cell | |
JP6776381B2 (en) | How to make a thermoelectric microcooler | |
KR101357172B1 (en) | Synthesis of Antimony Telluride (Sb-Te) paste and p-type thermoelectric material forming method using paste | |
US11974504B2 (en) | Thermoelectric conversion body, thermoelectric conversion module, and method for manufacturing thermoelectric conversion body | |
Kassaei et al. | Inflexible silicon solar cell encapsulation process on curved surfaces: Experimental investigation |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE, TAIWAN Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:CHIANG, YING-JUNG;JEAN, REN-DER;LIN, HONG-CHING;AND OTHERS;REEL/FRAME:040900/0315 Effective date: 20170103 |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: DOCKETED NEW CASE - READY FOR EXAMINATION |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: NON FINAL ACTION MAILED |
|
STCV | Information on status: appeal procedure |
Free format text: NOTICE OF APPEAL FILED |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: NON FINAL ACTION MAILED |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: RESPONSE TO NON-FINAL OFFICE ACTION ENTERED AND FORWARDED TO EXAMINER |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: FINAL REJECTION MAILED |
|
STCB | Information on status: application discontinuation |
Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION |