US20140144019A1 - Heat Dissipation Device and Method of Manufacturing Same - Google Patents
Heat Dissipation Device and Method of Manufacturing Same Download PDFInfo
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- US20140144019A1 US20140144019A1 US14/167,447 US201414167447A US2014144019A1 US 20140144019 A1 US20140144019 A1 US 20140144019A1 US 201414167447 A US201414167447 A US 201414167447A US 2014144019 A1 US2014144019 A1 US 2014144019A1
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- heat dissipation
- heat
- dissipation device
- main body
- ceramic main
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- 230000017525 heat dissipation Effects 0.000 title claims abstract description 90
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 14
- 239000000919 ceramic Substances 0.000 claims abstract description 34
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910052802 copper Inorganic materials 0.000 claims abstract description 8
- 239000010949 copper Substances 0.000 claims abstract description 8
- 238000000034 method Methods 0.000 claims abstract description 4
- 238000003466 welding Methods 0.000 claims abstract description 4
- 239000000463 material Substances 0.000 claims description 10
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 8
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 8
- ZVWKZXLXHLZXLS-UHFFFAOYSA-N zirconium nitride Chemical compound [Zr]#N ZVWKZXLXHLZXLS-UHFFFAOYSA-N 0.000 claims description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 5
- 238000005219 brazing Methods 0.000 claims description 3
- 238000009792 diffusion process Methods 0.000 claims description 3
- 238000005476 soldering Methods 0.000 claims description 3
- 238000012546 transfer Methods 0.000 abstract description 17
- 239000005022 packaging material Substances 0.000 description 6
- 229910010293 ceramic material Inorganic materials 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000002411 adverse Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000008642 heat stress Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B21—MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
- B21D—WORKING OR PROCESSING OF SHEET METAL OR METAL TUBES, RODS OR PROFILES WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
- B21D53/00—Making other particular articles
- B21D53/02—Making other particular articles heat exchangers or parts thereof, e.g. radiators, condensers fins, headers
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F28—HEAT EXCHANGE IN GENERAL
- F28D—HEAT-EXCHANGE APPARATUS, NOT PROVIDED FOR IN ANOTHER SUBCLASS, IN WHICH THE HEAT-EXCHANGE MEDIA DO NOT COME INTO DIRECT CONTACT
- F28D15/00—Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls ; Heat-exchange apparatus employing intermediate heat-transfer medium or bodies
- F28D15/02—Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls ; Heat-exchange apparatus employing intermediate heat-transfer medium or bodies in which the medium condenses and evaporates, e.g. heat pipes
- F28D15/0233—Heat-exchange apparatus with the intermediate heat-transfer medium in closed tubes passing into or through the conduit walls ; Heat-exchange apparatus employing intermediate heat-transfer medium or bodies in which the medium condenses and evaporates, e.g. heat pipes the conduits having a particular shape, e.g. non-circular cross-section, annular
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F28—HEAT EXCHANGE IN GENERAL
- F28F—DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
- F28F21/00—Constructions of heat-exchange apparatus characterised by the selection of particular materials
- F28F21/04—Constructions of heat-exchange apparatus characterised by the selection of particular materials of ceramic; of concrete; of natural stone
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3731—Ceramic materials or glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
- H01L23/427—Cooling by change of state, e.g. use of heat pipes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
- H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23P—METAL-WORKING NOT OTHERWISE PROVIDED FOR; COMBINED OPERATIONS; UNIVERSAL MACHINE TOOLS
- B23P2700/00—Indexing scheme relating to the articles being treated, e.g. manufactured, repaired, assembled, connected or other operations covered in the subgroups
- B23P2700/10—Heat sinks
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F28—HEAT EXCHANGE IN GENERAL
- F28F—DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
- F28F3/00—Plate-like or laminated elements; Assemblies of plate-like or laminated elements
- F28F3/02—Elements or assemblies thereof with means for increasing heat-transfer area, e.g. with fins, with recesses, with corrugations
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F28—HEAT EXCHANGE IN GENERAL
- F28F—DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
- F28F3/00—Plate-like or laminated elements; Assemblies of plate-like or laminated elements
- F28F3/12—Elements constructed in the shape of a hollow panel, e.g. with channels
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/4935—Heat exchanger or boiler making
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/4935—Heat exchanger or boiler making
- Y10T29/49353—Heat pipe device making
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/4935—Heat exchanger or boiler making
- Y10T29/49393—Heat exchanger or boiler making with metallurgical bonding
Definitions
- the present invention relates to a heat dissipation device, and more particularly to a heat dissipation device having a heat dissipation element being directly connected at a heat transfer section to an clement made of a ceramic material, so as to overcome the problem of crack at an interface between the heat dissipation element and a heat source due to thermal fatigue.
- the present invention also relates to a method of manufacturing the above described heat dissipation device.
- the progress in semiconductor technology enables various integrated circuits (ICs) to have a gradually reduced volume.
- the number of computing elements provided on the presently available ICs is several times higher than that on the conventional ICs of the same volume.
- the heat generated by the computing elements during the operation thereof also increases.
- the heat generated by a central processing unit (CPU) at full-load condition is high enough to burn out the whole CPU.
- CPU central processing unit
- the CPU and other chips are heat sources in the electronic device. When the electronic device operates, these heat sources will generate heat.
- the CPU and other chips are mainly encapsulated with a ceramic material.
- the ceramic material has a low thermal expansion coefficient close to that of chips used in general electronic devices and is electrically non-conductive, and is therefore widely employed as packaging material and semiconductor material.
- a heat dissipation device usually includes a heat dissipating structure made of an aluminum material or a copper material, and is often used along with other heat dissipation elements, such as fans and heat pipes, in order to provide enhanced heat dissipation effect.
- heat dissipation structure made of an aluminum material or a copper material
- other heat dissipation elements such as fans and heat pipes
- the use of a heat dissipation structure with cooling fans and heat pipes would usually have adverse influence on the overall reliability of the electronic device.
- a heat dissipation device with simpler structural design would be better to the overall reliability of the electronic device.
- the heat transfer efficiency of the electronic device can be directly improved when the heat dissipation device used therewith uses a material having better heat transferring and radiating ability than copper.
- heat stress is another potential factor having adverse influence on the reliability of the electronic device in contact with the heat dissipation device.
- the heat source such as the chip in the CPU, has a relatively low thermal expansion coefficient.
- the electronic device manufacturers would usually use a ceramic material with low thermal expansion coefficient, such as aluminum nitride (AlN) or silicon carbide (SiC), to package the chip.
- heat dissipation for example, aluminum and copper materials forming the heat dissipation device have thermal expansion coefficients much higher than that of an LED sapphire chip and the ceramic packaging material thereof.
- an interface between the aluminum or copper material of the heat dissipation device and the ceramic packaging material of the LED sapphire chip tends to crack due to thermal fatigue caused by the difference in the thermal expansion coefficients thereof when the LED has been used over a long period of time.
- the interface crack in turn causes a rising thermal resistance at the interface.
- the rising thermal resistance at the heat dissipation interface would result in heat accumulation to cause burnout of the LED chip and bring permanent damage to the LED.
- a primary object of the present invention is to provide a heat dissipation device that overcomes the problem of crack at an interface between the heat dissipation device and a heat source due to thermal fatigue.
- Another object of the present invention is to provide a method of manufacturing a heat dissipation device that can overcome the problem of crack at an interface between the heat dissipation device and a heat source due to thermal fatigue.
- the heat dissipation device includes a heat dissipation element and a ceramic main body.
- the heat dissipation element includes a heat transfer section and a heat dissipation section located on one side of the heat transfer section; and the ceramic main body is connected to another side of the heat transfer section opposite to the heat dissipation section.
- the heat dissipation element can be any one of a heat sink, a vapor chamber, a heat pipe, and a water block.
- the ceramic main body is made of a material selected from the group consisting of silicon nitride (Si 3 N 4 ), zirconium nitride (ZrO 2 ), and aluminum oxide (Al 2 O 3 ).
- the heat dissipation device manufacturing method includes the following steps:
- the heat dissipation element and the ceramic main body are connected to each other in a manner selected from the group consisting of soldering, brazing, diffusion bonding, ultrasonic welding, and direct bonding copper (DBC) process.
- the ceramic main body is directly connected to the heat dissipation element for contacting with a ceramic packaging material of a heat source, it is able to avoid the problem of crack at an interface between the heat dissipation device and the heat source due to thermal fatigue caused by different thermal expansion coefficients of the heat dissipation element and the heat source package.
- FIG. 1 a is an exploded perspective view of a heat dissipation device according to a first embodiment of the present invention
- FIG. 1 b is an assembled view of FIG. 1 ;
- FIG. 2 is a front view of FIG. 1 b;
- FIG. 3 is an exploded perspective view of a heat dissipation device according to a second embodiment of the present invention.
- FIG. 4 is an assembled view of FIG. 3 ;
- FIG. 5 is a cross sectional view of a heat dissipation device according to a third embodiment of the present invention.
- FIG. 6 is an exploded perspective view of a heat dissipation device according to a fourth embodiment of the present invention.
- FIG. 7 is an assembled view of FIG. 6 ;
- FIG. 8 is a flowchart showing the steps included in a method of manufacturing heat dissipation device according to the present invention.
- FIGS. 1 a and 1 b are exploded and assembled perspective views, respectively, of a heat dissipation device according to a first embodiment of the present invention, and to FIG. 2 that is a front view of FIG. 1 b.
- the heat dissipation device is generally denoted by reference numeral 1 , and includes a heat dissipation element 11 and a ceramic main body 12 .
- the heat dissipation element 11 includes a heat transfer section 111 and a heat dissipation section 112 located on one side of the heat transfer section 111 .
- the ceramic main body 12 is connected to another side of the heat transfer section 111 opposite to the heat dissipation section 112 .
- the heat dissipation element 11 is a heat sink, and the ceramic main body 12 is made of a material selected from the group consisting of silicon nitride (Si 3 N 4 ), zirconium nitride (ZrO 2 ), and aluminum oxide (Al 2 O 3 ).
- FIGS. 3 and 4 are exploded and assembled perspective views, respectively, of a heat dissipation device according to a second embodiment of the present invention.
- the second embodiment is generally structurally similar to the first embodiment, except that the heat dissipation element 11 in the second embodiment is a vapor chamber.
- the ceramic main body 12 is similarly connected to the heat transfer section 111 of the heat dissipation element 11 .
- FIG. 5 is a cross sectional view of a heat dissipation device according to a third embodiment of the present invention.
- the third embodiment is generally structurally similar to the first embodiment, except that the heat dissipation element 11 in the third embodiment is a heat pipe. And, the ceramic main body 12 is similarly connected to the heat transfer section 111 of the heat dissipation element 11 .
- FIGS. 6 and 7 are exploded and assembled perspective views, respectively, of a heat dissipation device according to a fourth embodiment of the present invention.
- the fourth embodiment is generally structurally similar to the first embodiment, except that the heat dissipation element 11 in the fourth embodiment is a water block. And, the ceramic main body 12 is similarly connected to the heat transfer section 111 of the heat dissipation element 11 .
- FIG. 8 is a flowchart showing the steps included in a method of manufacturing heat dissipation device according to an embodiment of the present invention. Please refer to FIG. 8 along with FIGS. 1 to 7 .
- the heat dissipation device manufacturing method of the present invention includes the following steps S 1 and S 2 .
- step S 1 a heat dissipation element and a ceramic main body are provided.
- the heat dissipation element 11 can be any one of a heat sink, a vapor chamber, a heat pipe, and a water block.
- the ceramic main body 12 is made of a material selected from the group consisting of silicon nitride (Si 3 N 4 ), zirconium nitride (ZrO 2 ), and aluminum oxide (Al 2 O 3 ).
- the heat dissipation element and the ceramic main body are connected to each other.
- the heat dissipation element 11 and the ceramic main body 12 are connected to each other by way of soldering, brazing, diffusion bonding, ultrasonic welding, or direct bonding copper (DBC) process.
- soldering brazing, diffusion bonding, ultrasonic welding, or direct bonding copper (DBC) process.
- the present invention is characterized in that the heat dissipation element 11 , which can be a heat sink, a vapor chamber, a heat pipe or a water block, has a heat transfer section 111 for transferring heat from a heat source to a heat dissipation 112 ; and that the ceramic main body 12 is connected to the heat transfer section 111 of the heat dissipation element 11 for contacting with the heat source. Since the ceramic main body 12 has a thermal expansion coefficient close to that of a ceramic packaging material of the heat source, it is able to avoid the problem of crack at an interface between the heat dissipation element 11 and the heat source due to thermal fatigue caused by different thermal expansion coefficients of the heat dissipation element 11 and the heat source package. Further, the heat dissipation element with the ceramic main body connected to the heat transfer section thereof can be applied to more different fields.
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Thermal Sciences (AREA)
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- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
A heat dissipation device includes a heat dissipation element and a ceramic main body. The heat dissipation element includes a heat transfer section and a heat dissipation section located on one side of the heat transfer section; and the ceramic main body is directly connected to another side of the heat transfer section opposite to the heat dissipation section by way of welding or a direct bonding copper process, so as to overcome the problem of crack at an interface between the heat dissipation device and a heat source due to thermal fatigue. A method of manufacturing the above-described heat dissipation device is also disclosed.
Description
- This application claims the priority benefit of Taiwan patent application number 100130953 filed on Aug. 29, 2011.
- The present invention relates to a heat dissipation device, and more particularly to a heat dissipation device having a heat dissipation element being directly connected at a heat transfer section to an clement made of a ceramic material, so as to overcome the problem of crack at an interface between the heat dissipation element and a heat source due to thermal fatigue. The present invention also relates to a method of manufacturing the above described heat dissipation device.
- The progress in semiconductor technology enables various integrated circuits (ICs) to have a gradually reduced volume. For the purpose of processing more data, the number of computing elements provided on the presently available ICs is several times higher than that on the conventional ICs of the same volume. When the number of computing elements on the ICs increases, the heat generated by the computing elements during the operation thereof also increases. For example, the heat generated by a central processing unit (CPU) at full-load condition is high enough to burn out the whole CPU. Thus, it is always an important issue to properly provide a heat dissipation device for ICs.
- The CPU and other chips are heat sources in the electronic device. When the electronic device operates, these heat sources will generate heat. The CPU and other chips are mainly encapsulated with a ceramic material. The ceramic material has a low thermal expansion coefficient close to that of chips used in general electronic devices and is electrically non-conductive, and is therefore widely employed as packaging material and semiconductor material.
- On the other hand, a heat dissipation device usually includes a heat dissipating structure made of an aluminum material or a copper material, and is often used along with other heat dissipation elements, such as fans and heat pipes, in order to provide enhanced heat dissipation effect. However, in considering the reliability of the electronic device, the use of a heat dissipation structure with cooling fans and heat pipes would usually have adverse influence on the overall reliability of the electronic device.
- Generally speaking, a heat dissipation device with simpler structural design would be better to the overall reliability of the electronic device. Thus, the heat transfer efficiency of the electronic device can be directly improved when the heat dissipation device used therewith uses a material having better heat transferring and radiating ability than copper.
- In addition, heat stress is another potential factor having adverse influence on the reliability of the electronic device in contact with the heat dissipation device. The heat source, such as the chip in the CPU, has a relatively low thermal expansion coefficient. To pursue good product reliability, the electronic device manufacturers would usually use a ceramic material with low thermal expansion coefficient, such as aluminum nitride (AlN) or silicon carbide (SiC), to package the chip.
- Further, in the application field of light-emitting diode (LED) heat dissipation, for example, aluminum and copper materials forming the heat dissipation device have thermal expansion coefficients much higher than that of an LED sapphire chip and the ceramic packaging material thereof. In a high-brightness LED, an interface between the aluminum or copper material of the heat dissipation device and the ceramic packaging material of the LED sapphire chip tends to crack due to thermal fatigue caused by the difference in the thermal expansion coefficients thereof when the LED has been used over a long period of time. The interface crack in turn causes a rising thermal resistance at the interface. For the high-brightness LED products, the rising thermal resistance at the heat dissipation interface would result in heat accumulation to cause burnout of the LED chip and bring permanent damage to the LED.
- In brief, the difference between the thermal expansion coefficients of the ceramic packaging material of a heat source and the metal material of a heat dissipation device would cause crack at an interface between the heat source and the heat dissipation device due to thermal fatigue; and it is necessary to work out a way to solve the problem of such crack at the interface.
- A primary object of the present invention is to provide a heat dissipation device that overcomes the problem of crack at an interface between the heat dissipation device and a heat source due to thermal fatigue.
- Another object of the present invention is to provide a method of manufacturing a heat dissipation device that can overcome the problem of crack at an interface between the heat dissipation device and a heat source due to thermal fatigue.
- To achieve the above and other objects, the heat dissipation device according to the present invention includes a heat dissipation element and a ceramic main body. The heat dissipation element includes a heat transfer section and a heat dissipation section located on one side of the heat transfer section; and the ceramic main body is connected to another side of the heat transfer section opposite to the heat dissipation section.
- In the present invention, the heat dissipation element can be any one of a heat sink, a vapor chamber, a heat pipe, and a water block.
- In the present invention, the ceramic main body is made of a material selected from the group consisting of silicon nitride (Si3N4), zirconium nitride (ZrO2), and aluminum oxide (Al2O3).
- To achieve the above and other objects, the heat dissipation device manufacturing method according to the present invention includes the following steps:
- providing a heat dissipation element and a ceramic main body; and
- connecting the heat dissipation element and the ceramic main body to each other.
- In the present invention, the heat dissipation element and the ceramic main body are connected to each other in a manner selected from the group consisting of soldering, brazing, diffusion bonding, ultrasonic welding, and direct bonding copper (DBC) process.
- In the present invention, since the ceramic main body is directly connected to the heat dissipation element for contacting with a ceramic packaging material of a heat source, it is able to avoid the problem of crack at an interface between the heat dissipation device and the heat source due to thermal fatigue caused by different thermal expansion coefficients of the heat dissipation element and the heat source package.
- The structure and the technical means adopted by the present invention to achieve the above and other objects can be best understood by referring to the following detailed description of the preferred embodiments and the accompanying drawings, wherein
-
FIG. 1 a is an exploded perspective view of a heat dissipation device according to a first embodiment of the present invention; -
FIG. 1 b is an assembled view ofFIG. 1 ; -
FIG. 2 is a front view ofFIG. 1 b; -
FIG. 3 is an exploded perspective view of a heat dissipation device according to a second embodiment of the present invention; -
FIG. 4 is an assembled view ofFIG. 3 ; -
FIG. 5 is a cross sectional view of a heat dissipation device according to a third embodiment of the present invention; -
FIG. 6 is an exploded perspective view of a heat dissipation device according to a fourth embodiment of the present invention; -
FIG. 7 is an assembled view ofFIG. 6 ; and -
FIG. 8 is a flowchart showing the steps included in a method of manufacturing heat dissipation device according to the present invention. - The present invention will now be described with some preferred embodiments thereof and with reference to the accompanying drawings. For the purpose of easy to understand, elements that are the same in the preferred embodiments are denoted by the same reference numerals.
- Please refer to
FIGS. 1 a and 1 b that are exploded and assembled perspective views, respectively, of a heat dissipation device according to a first embodiment of the present invention, and toFIG. 2 that is a front view ofFIG. 1 b. As shown, the heat dissipation device is generally denoted by reference numeral 1, and includes aheat dissipation element 11 and a ceramicmain body 12. - The
heat dissipation element 11 includes aheat transfer section 111 and aheat dissipation section 112 located on one side of theheat transfer section 111. The ceramicmain body 12 is connected to another side of theheat transfer section 111 opposite to theheat dissipation section 112. In the illustrated first embodiment, theheat dissipation element 11 is a heat sink, and the ceramicmain body 12 is made of a material selected from the group consisting of silicon nitride (Si3N4), zirconium nitride (ZrO2), and aluminum oxide (Al2O3). - Please refer to
FIGS. 3 and 4 that are exploded and assembled perspective views, respectively, of a heat dissipation device according to a second embodiment of the present invention. As shown, the second embodiment is generally structurally similar to the first embodiment, except that theheat dissipation element 11 in the second embodiment is a vapor chamber. And, the ceramicmain body 12 is similarly connected to theheat transfer section 111 of theheat dissipation element 11. -
FIG. 5 is a cross sectional view of a heat dissipation device according to a third embodiment of the present invention. As shown, the third embodiment is generally structurally similar to the first embodiment, except that theheat dissipation element 11 in the third embodiment is a heat pipe. And, the ceramicmain body 12 is similarly connected to theheat transfer section 111 of theheat dissipation element 11. - Please refer to
FIGS. 6 and 7 that are exploded and assembled perspective views, respectively, of a heat dissipation device according to a fourth embodiment of the present invention. As shown, the fourth embodiment is generally structurally similar to the first embodiment, except that theheat dissipation element 11 in the fourth embodiment is a water block. And, the ceramicmain body 12 is similarly connected to theheat transfer section 111 of theheat dissipation element 11. -
FIG. 8 is a flowchart showing the steps included in a method of manufacturing heat dissipation device according to an embodiment of the present invention. Please refer toFIG. 8 along withFIGS. 1 to 7 . The heat dissipation device manufacturing method of the present invention includes the following steps S1 and S2. - In the step S1, a heat dissipation element and a ceramic main body are provided.
- More specifically, a
heat dissipation element 11 and a ceramicmain body 12 are provided. Theheat dissipation element 11 can be any one of a heat sink, a vapor chamber, a heat pipe, and a water block. The ceramicmain body 12 is made of a material selected from the group consisting of silicon nitride (Si3N4), zirconium nitride (ZrO2), and aluminum oxide (Al2O3). - In the step S2, the heat dissipation element and the ceramic main body are connected to each other.
- More specifically, the
heat dissipation element 11 and the ceramicmain body 12 are connected to each other by way of soldering, brazing, diffusion bonding, ultrasonic welding, or direct bonding copper (DBC) process. - The present invention is characterized in that the
heat dissipation element 11, which can be a heat sink, a vapor chamber, a heat pipe or a water block, has aheat transfer section 111 for transferring heat from a heat source to aheat dissipation 112; and that the ceramicmain body 12 is connected to theheat transfer section 111 of theheat dissipation element 11 for contacting with the heat source. Since the ceramicmain body 12 has a thermal expansion coefficient close to that of a ceramic packaging material of the heat source, it is able to avoid the problem of crack at an interface between theheat dissipation element 11 and the heat source due to thermal fatigue caused by different thermal expansion coefficients of theheat dissipation element 11 and the heat source package. Further, the heat dissipation element with the ceramic main body connected to the heat transfer section thereof can be applied to more different fields. - The present invention has been described with some preferred embodiments thereof and it is understood that many changes and modifications in the described embodiments can be carried out without departing from the scope and the spirit of the invention that is intended to be limited only by the appended claims.
Claims (7)
1-4. (canceled)
5. A method of manufacturing heat dissipation device, comprising the following steps:
providing a heat dissipation element and a ceramic main body; and
connecting the heat dissipation element and the ceramic main body to each other.
6. The method of manufacturing heat dissipation device as claimed in claim 5 , wherein the heat dissipation element and the ceramic main body are connected to each other in a manner selected from the group consisting of soldering, brazing, and ultrasonic welding.
7. The method of manufacturing heat dissipation device as claimed in claim 5 , wherein the heat dissipation element and the ceramic main body are connected to each other by way of diffusion bonding.
8. The method of manufacturing heat dissipation device as claimed in claim 5 , wherein the ceramic main body is made of a material selected from the group consisting of silicon nitride (Si3N4), zirconium nitride (ZrO2), and aluminum oxide (Al2O3).
9. The method of manufacturing heat dissipation device as claimed in claim 5 , wherein the heat dissipation element and the ceramic main body are connected to each other by way of direct bonding copper (DBC) process.
10. The method of manufacturing heat dissipation device as claimed in claim 5 , wherein the heat dissipation element is selected from the group consisting of a heat sink, a vapor chamber, a heat pipe, and a water block.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/167,447 US20140144019A1 (en) | 2011-08-29 | 2014-01-29 | Heat Dissipation Device and Method of Manufacturing Same |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW100130953 | 2011-08-29 | ||
TW100130953A TWI541488B (en) | 2011-08-29 | 2011-08-29 | Heat dissipation device and method of manufacturing same |
US13/274,359 US20130048253A1 (en) | 2011-08-29 | 2011-10-17 | Heat dissipation device and method of manufacturing same |
US14/167,447 US20140144019A1 (en) | 2011-08-29 | 2014-01-29 | Heat Dissipation Device and Method of Manufacturing Same |
Related Parent Applications (1)
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US13/274,359 Division US20130048253A1 (en) | 2011-08-29 | 2011-10-17 | Heat dissipation device and method of manufacturing same |
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US20140144019A1 true US20140144019A1 (en) | 2014-05-29 |
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US13/274,359 Abandoned US20130048253A1 (en) | 2011-08-29 | 2011-10-17 | Heat dissipation device and method of manufacturing same |
US14/167,447 Abandoned US20140144019A1 (en) | 2011-08-29 | 2014-01-29 | Heat Dissipation Device and Method of Manufacturing Same |
Family Applications Before (1)
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US13/274,359 Abandoned US20130048253A1 (en) | 2011-08-29 | 2011-10-17 | Heat dissipation device and method of manufacturing same |
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US (2) | US20130048253A1 (en) |
TW (1) | TWI541488B (en) |
Families Citing this family (2)
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US10052713B2 (en) * | 2015-08-20 | 2018-08-21 | Ultex Corporation | Bonding method and bonded structure |
JP6710320B2 (en) * | 2017-03-27 | 2020-06-17 | 三菱電機株式会社 | Vehicle power converter |
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US20110024086A1 (en) * | 2009-07-28 | 2011-02-03 | Dsem Led Lighting Sdn. Bhd. | Diffusion Bonding Circuit Submount Directly To Vapor Chamber |
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JPH07211832A (en) * | 1994-01-03 | 1995-08-11 | Motorola Inc | Power radiating device and manufacture thereof |
US5533257A (en) * | 1994-05-24 | 1996-07-09 | Motorola, Inc. | Method for forming a heat dissipation apparatus |
JP3127754B2 (en) * | 1995-01-19 | 2001-01-29 | 富士電機株式会社 | Semiconductor device |
JP3445511B2 (en) * | 1998-12-10 | 2003-09-08 | 株式会社東芝 | Insulating substrate, method of manufacturing the same, and semiconductor device using the same |
US7208191B2 (en) * | 2002-04-23 | 2007-04-24 | Freedman Philip D | Structure with heat dissipating device and method |
JP4133170B2 (en) * | 2002-09-27 | 2008-08-13 | Dowaホールディングス株式会社 | Aluminum-ceramic bonded body |
JP4543279B2 (en) * | 2004-03-31 | 2010-09-15 | Dowaメタルテック株式会社 | Manufacturing method of aluminum joining member |
WO2007142261A1 (en) * | 2006-06-06 | 2007-12-13 | Mitsubishi Materials Corporation | Power element mounting substrate, method for manufacturing the power element mounting substrate, power element mounting unit, method for manufacturing the power element mounting unit, and power module |
US20110108245A1 (en) * | 2009-11-10 | 2011-05-12 | Dsem Holdings Sdn. Bhd. | Circuit Board Forming Diffusion Bonded Wall of Vapor Chamber |
-
2011
- 2011-08-29 TW TW100130953A patent/TWI541488B/en active
- 2011-10-17 US US13/274,359 patent/US20130048253A1/en not_active Abandoned
-
2014
- 2014-01-29 US US14/167,447 patent/US20140144019A1/en not_active Abandoned
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US20090213546A1 (en) * | 2005-01-11 | 2009-08-27 | Vahab Hassani | Low thermal resistance power module assembly |
US20060263235A1 (en) * | 2005-05-20 | 2006-11-23 | Fuji Electric Device Technology Co., Ltd | Solder alloy and a semiconductor device using the solder alloy |
US20100109016A1 (en) * | 2007-04-17 | 2010-05-06 | Toyota Jidosha Kabushiki Kaisha | Power semiconductor module |
US20110024086A1 (en) * | 2009-07-28 | 2011-02-03 | Dsem Led Lighting Sdn. Bhd. | Diffusion Bonding Circuit Submount Directly To Vapor Chamber |
Also Published As
Publication number | Publication date |
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TW201309995A (en) | 2013-03-01 |
TWI541488B (en) | 2016-07-11 |
US20130048253A1 (en) | 2013-02-28 |
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