US20140034282A1 - Heat radiation component and method for manufacturing heat radiation component - Google Patents
Heat radiation component and method for manufacturing heat radiation component Download PDFInfo
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- US20140034282A1 US20140034282A1 US13/951,582 US201313951582A US2014034282A1 US 20140034282 A1 US20140034282 A1 US 20140034282A1 US 201313951582 A US201313951582 A US 201313951582A US 2014034282 A1 US2014034282 A1 US 2014034282A1
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/007—Electroplating using magnetic fields, e.g. magnets
- C25D5/009—Deposition of ferromagnetic material
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/158—Carbon nanotubes
- C01B32/16—Preparation
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1646—Characteristics of the product obtained
- C23C18/165—Multilayered product
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1655—Process features
- C23C18/1662—Use of incorporated material in the solution or dispersion, e.g. particles, whiskers, wires
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1655—Process features
- C23C18/1664—Process features with additional means during the plating process
- C23C18/1673—Magnetic field
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D15/00—Electrolytic or electrophoretic production of coatings containing embedded materials, e.g. particles, whiskers, wires
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/007—Electroplating using magnetic fields, e.g. magnets
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F28—HEAT EXCHANGE IN GENERAL
- F28F—DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
- F28F3/00—Plate-like or laminated elements; Assemblies of plate-like or laminated elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3736—Metallic materials
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B2202/00—Structure or properties of carbon nanotubes
- C01B2202/20—Nanotubes characterized by their properties
- C01B2202/34—Length
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B2202/00—Structure or properties of carbon nanotubes
- C01B2202/20—Nanotubes characterized by their properties
- C01B2202/36—Diameter
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F28—HEAT EXCHANGE IN GENERAL
- F28F—DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
- F28F21/00—Constructions of heat-exchange apparatus characterised by the selection of particular materials
- F28F21/02—Constructions of heat-exchange apparatus characterised by the selection of particular materials of carbon, e.g. graphite
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F28—HEAT EXCHANGE IN GENERAL
- F28F—DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
- F28F3/00—Plate-like or laminated elements; Assemblies of plate-like or laminated elements
- F28F3/02—Elements or assemblies thereof with means for increasing heat-transfer area, e.g. with fins, with recesses, with corrugations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Definitions
- the embodiments discussed herein are related to a heat radiation component and a method for manufacturing a heat radiation component.
- a semiconductor device used for a CPU (Central Processing Unit) or the like generates heat at a high temperature during operation. Therefore, in order to form the semiconductor device to exhibit a satisfactory performance, it is important to rapidly radiate the heat outside the semiconductor device.
- CPU Central Processing Unit
- a heat radiation component such as a heat spreader or a heat pipe is attached to the semiconductor device for ensuring a path to effectively radiate the heat generated by the semiconductor device.
- studies are being conducted for improving the heat radiating (heat releasing) performance of the heat radiation component such as the heat spreader or the heat pipe.
- a metal layer having carbon materials e.g., carbon nanotubes distributed therein is formed on a surface of the heat radiation component (e.g., heat spreader, heat pipe).
- Some examples of a method for distributing carbon materials (e.g., carbon nanotubes) inside a metal layer are as follows.
- the first method is to arrange carbon nanotubes substantially in a vertical direction by injecting a plating liquid including carbon nanotubes into holes that are narrower than the fiber length of the carbon nanotubes (see, for example, Japanese Laid-Open Patent Publication No. 2006-152372).
- a second method is to form a metal plating layer by an electroplating process, so that carbon nanotubes are in a vertical direction along an electrical flux line (see, for example, Japanese Laid-Open Patent Publication No. 2001-283716).
- a heat radiation component including a substrate including a predetermined surface, a plurality of carbon materials arranged with spaces in between, and a plating layer having a surface and including a plating material that fills the spaces between the plurality of carbon materials. At least one of the plurality of carbon materials is oriented orthogonal to the predetermined surface of the substrate. A part of each of the plurality of carbon materials protrudes from the surface of the plating layer in a direction opposite to the substrate.
- FIG. 1 is a cross-sectional view illustrating a heat radiation component according to a first embodiment of the present invention
- FIGS. 2A and 2B are schematic diagrams for describing processes for manufacturing a heat radiation component according to the first embodiment of the present invention
- FIGS. 3A and 3B are schematic diagrams for describing processes for manufacturing a heat radiation component according to a second embodiment of the present invention.
- FIG. 4 is a graph illustrating the results for confirming a heat radiating property of a heat radiation component according to an embodiment of the present invention.
- FIG. 1 is a cross-sectional view illustrating a heat radiation component 1 according to the first embodiment of the present invention.
- the heat radiation component 1 includes a substrate 10 and a carbon material layer 20 .
- the substrate 10 is preferably formed of a metal material having a satisfactory thermal conductivity.
- the metal material may be, for example, copper (Cu), aluminum (Al), iron (Fe), or an alloy including any of these metals. It is, however, to be noted that a material other than metal may be used as long as the material can provide a satisfactory thermal conductivity.
- the carbon material layer 20 includes a plating layer 22 formed on a surface 10 a of the substrate 10 .
- the plating layer 22 includes carbon nanotubes 21 .
- the plating layer 22 is formed filling the spaces between the carbon nanotubes 21 .
- the thickness T of the plating layer 22 is, for example, approximately 50 ⁇ m.
- the carbon nanotubes 21 are arranged (oriented) orthogonal to the surface 10 a of the substrate 10 . A part of each of the carbon nanotubes 21 protrudes from a surface of the plating layer 22 in a direction opposite to the substrate 10 .
- the term “orthogonal” does not only refer to the carbon nanotubes 21 being completely orthogonal to the surface 10 a of the substrate 10 but also to the carbon nanotubes 21 being substantially orthogonal to the surface 10 a of the substrate 10 to the extent of being able to attain the below-described effects of the heat radiation component 1 .
- the part of each of the carbon nanotubes 21 protruding from a surface 22 a of the plating layer 22 may hereinafter also be referred to as a protruding part of the carbon nanotube 21 .
- the amount L by which the protruding part of the carbon nanotube 21 protrudes from the surface 22 a of the plating layer 22 is, for example, approximately 5 ⁇ m to 10 ⁇ m. It is to be noted that the carbon nanotubes 21 may have different protrusion amounts L.
- a projected area (from a plan view) of the protrusion parts of the carbon nanotubes 21 is, for example, 3% or more with respect to the area of an upper surface of the plating layer 22 .
- the protrusion amount L is preferred to be greater than 5 ⁇ m.
- the protrusion amount L is preferred to be less than 10 ⁇ m.
- the diameter of the carbon nanotube 21 is, for example, approximately 100 nm to 300 nm.
- the length of the carbon nanotube 21 is, for example, approximately 55 ⁇ m to 60 ⁇ m.
- tens of thousands of carbon nanotubes are formed standing close together on the surface 10 a of the substrate 10 .
- the material of the plating layer 22 is preferably a metal having satisfactory thermal conductivity and having a rust-resistant property.
- nickel (Ni), copper (Cu), cobalt (Co), gold, (Au), silver (Ag), or palladium (Pd) may be used as the material of the plating layer 22 .
- carbon materials such as carbon nano-fiber, graphite, or carbon black may be used instead of the carbon nanotubes 21 . Further, a combination of any of these carbon materials may be used instead of the carbon nanotubes 21 .
- the heat radiation component 1 can be applied to, for example, a vapor chamber, a heat pipe, a heat spreader, or a casing of an LED (Light Emitting Diode). That is, by attaching the substrate 10 of the heat radiation component 1 to a heat generating element (e.g., semiconductor device), the heat generated by the heat generating element can be rapidly transmitted to a surface of the carbon material layer 20 via the substrate 10 .
- a heat generating element e.g., semiconductor device
- FIGS. 2A and 2B are schematic diagrams for describing processes for manufacturing the heat radiation component of the first embodiment.
- the substrate 10 is prepared.
- the carbon nanotubes 21 are formed standing close together on the substrate 10 , in a manner that the carbon nanotubes 21 are arranged (oriented) in an orthogonal direction with respect to the surface 10 a of the substrate 10 .
- the substrate 10 is preferably formed of a metal material having a satisfactory thermal conductivity.
- the metal material may be, for example, copper (Cu), aluminum (Al), iron (Fe), or an alloy including any of these metals. It is, however, to be noted that a material other than metal may be used as long as the material can provide a satisfactory thermal conductivity.
- the carbon nanotubes 21 are formed directly on the surface 10 a of the substrate 10 by using a CVD (Chemical Vapor Deposition) method, so that the carbon nanotubes 21 are arranged in the orthogonal direction with respect to the surface 10 a of the substrate 10 . More specifically, the substrate 10 is placed in a heating furnace that is adjusted to a predetermined pressure and temperature. Then, the carbon nanotubes 21 are formed on the surface 10 a of the substrate 10 by performing a CVD process on the substrate 10 .
- the pressure inside the heating furnace is, for example, approximately 100 Pa, and the temperature inside the heating furnace is, for example, approximately 600° C.
- the process gas used in the CVD process may be, for example, acetylene gas.
- the carrier gas used in the CVD process may be, for example, argon gas or hydrogen gas.
- each of the carbon nanotubes 21 has one end contacting the surface 10 a of the substrate 10 .
- the diameter of the carbon nanotube 21 is, for example, approximately 100 nm to 300 nm.
- the length of the carbon nanotube 21 is, for example, approximately 55 ⁇ m to 60 ⁇ m.
- the number of carbon nanotubes 21 is, for example, approximately tens of thousands of carbon nanotubes 21 .
- the length of the carbon nanotube 21 (distance from the surface 10 a of the substrate 10 to a distal end of the carbon nanotube 21 ) can be controlled by adjusting the time of growth of the carbon nanotube 21 .
- a metal catalyst layer may be formed on the surface 10 a of the substrate by using, for example, a sputtering method.
- the carbon nanotubes 21 are formed on the metal catalyst layer by performing a CVD process on the substrate 10 .
- iron (Fe), cobalt (Co), or nickel (Ni) may be used to form the metal catalyst layer.
- the thickness of the metal catalyst layer is, for example, approximately a few nm.
- the plating layer 22 is formed on the surface 10 a of the substrate 10 to obtain a carbon material layer 20 that includes the plating layer 22 having the carbon nanotubes 21 provided therein.
- the plating layer 22 is formed by filling (supplying) a plating material in the spaces between the carbon nanotubes 21 , so that a part of each of the carbon nanotubes 21 protrudes from the surface 22 a of the plating layer 22 in a direction opposite from the substrate 10 .
- the thickness of the plating layer 22 is, for example, approximately 50 ⁇ m.
- the amount L by which the protruding part of the carbon nanotube 21 protrudes from the surface 22 a of the plating layer 22 is, for example, approximately 5 ⁇ m to 10 ⁇ m. It is to be noted that the carbon nanotubes 21 may have different protrusion amounts L.
- a projected area (from a plan view) of the protrusion parts of the carbon nanotubes 21 is, for example, 3% or more with respect to the area of an upper surface of the plating layer 22 .
- a part of each of the carbon nanotubes 21 protrudes from the surface 22 a of the plating layer 22 in a direction opposite to the substrate 10 . Accordingly, heat that is transmitted from the substrate 10 can be radiated from the protruding part of each of the carbon nanotubes 21 . Hence, the heat radiating property of the carbon material layer 20 can be improved.
- each of the carbon nanotubes 21 is constituted by fibers that are oriented in a longitudinal direction of the carbon nanotube 21 , the orientation of the fibers can be sufficiently utilized to further improve the heat radiating property of the carbon material layer 20 .
- the plating layer 22 is formed by using the electroplating method according to the first embodiment, the plating layer 22 may be formed by using an electroless plating method.
- the plating layer 22 with the electroless plating method first, the above-described processes illustrated in FIG. 2A are performed. Then, an electroless plating process is performed on the substrate 10 instead of the electroplating method in the process illustrated in FIG. 2B .
- Ni—P, Ni—B, or Cu may be used as the material of the electroless plating method. The same effects as those of the first embodiment can be attained by forming the plating layer 22 with the electroless plating method.
- the heat radiation component 1 is manufactured by using a method different from the method used in the first embodiment.
- like components/parts are denoted by the same reference numerals as the reference numerals of the first embodiment and are not further explained.
- FIGS. 3A and 3B are schematic diagrams for describing processes for manufacturing the heat radiation component 1 of the second embodiment.
- the substrate 10 is prepared.
- the substrate 10 is placed in a magnetic field generating apparatus (not illustrated).
- a magnetic field M is generated in a direction orthogonal to the surface 10 a of the substrate 10 .
- an apparatus using a superconducting magnet may be used as the magnetic field generating apparatus (not illustrated).
- the magnetic field M is, for example, approximately 5 T (teslas) to 10 T (teslas).
- the material used for the substrate 10 may be the same as the material used for the substrate 10 of the first embodiment.
- the carbon material layer 20 is formed having the carbon nanotubes 21 provided in the plating layer 22 .
- the plating layer 22 is formed by filling a plating material in the spaces between the carbon nanotubes 21 , so that a part of each of the carbon nanotubes 21 protrudes from the surface 22 a of the plating layer 22 in a direction opposite to the substrate 10 .
- a material of the carbon nanotubes 21 (hereinafter also referred to as “carbon nanotube material 21 ”) is dispersed in an electroplating liquid used for forming the plating layer 22 . Then, the electroplating liquid having the carbon nanotube material 21 dispersed therein is used to perform an electroplating process on the surface 10 a of the substrate 10 inside the magnetic field M. Thereby, the carbon material layer 20 is formed including the plating layer 22 having the carbon nanotubes 21 provided therein.
- nickel (Ni), copper (Cu), cobalt (Co), gold (Au), silver (Ag), or palladium (Pd) may be used as the material of the plating layer 22 .
- a material that is not affected or hardly affected by the magnetic field M is preferred to be used as the plating layer 22 . It is to be noted that the plating layer 22 is formed, so that a part of each of the carbon nanotubes 22 protrudes from the surface 22 a of the plating layer in a direction opposite to the substrate 10 .
- a large number of carbon nanotubes 21 can be formed on the surface 10 a of the substrate 10 in a direction orthogonal to the surface 10 a of the substrate. Details such as the thickness of the plating layer 22 or the amount in which the carbon nanotubes 21 protrude from the surface 22 a are substantially the same as those described in the first embodiment. It is to be noted that, in some cases, the ends of the carbon nanotubes 21 of the second embodiment do not contact the surface 10 a of the substrate 10 .
- the electroplating liquid used in FIG. 3B it is preferable to blend the electroplating liquid used in FIG. 3B with a polyacrylic acid to be used as a dispersing agent for dispersing the carbon nanotube material 21 . Further, it is also preferable to blend the electroplating liquid with an alkanediol compound, an alkenediol compound, or an alkynediol compound to be used as a brightening agent.
- an alkynediol compound including alkynediol molecules having an oxyethylene side chain in which the oxyethylene side chain constitutes at least 20% by weight of the molecular weight of the alkynediol compound. It is preferable for the oxyethylene side chain to constitute 85% or less by weight of the molecular weight of the alkynediol compound.
- the electroplating liquid with: an organic compound including a ketone group, an aldehyde group, or a carboxylic acid group; a carbon mono oxide compound with a coumarin derivative; an aryl aldehyde sulfone compound; a sulfone compound including an aryl group; an alkylene carboxy ester; an alkylene aldehyde; an acetylene derivative; a pyridinium compound; an alkane sulfonic compound; or an azo compound to be used as a surface activating agent.
- the carbon nanotube material 21 in the electroplating liquid it is preferable to immerse the carbon nanotube material 21 in a dispersing agent beforehand, so that the dispersibility of the carbon nanotube material 21 is enhanced. Then, the carbon nanotube material 21 having enhanced dispersibility is mixed with the electroplating liquid.
- the amount of the carbon nanotube material 21 mixed with the electroplating liquid is preferably greater than or equal to 100 ppm (more preferably, equal to or greater than 500 ppm, even more preferably, equal to or greater than 1000 ppm).
- the upper limit of the mixture amount of the carbon nanotube material 21 is approximately 1% by weight. In a case where the mixture amount of the carbon nanotube material 21 exceeds 1% by weight, it becomes difficult to disperse the carbon nanotube material 21 .
- the electroplating process When performing the electroplating process with the electroplating liquid having the carbon nanotube material 21 dispersed therein, it is preferable to perform the electroplating process with a current density of 5 A/dm 2 while agitating the electroplating liquid, so that the carbon nanotube material 21 can be maintained in a dispersed state during the electroplating process. In a case where the electroplating process is performed with a current density exceeding 5 A/dm 2 , the plating layer 22 tends to be formed having a rugged surface.
- the substrate 10 Prior to performing the electroplating process, the substrate 10 is connected to a cathode of a direct current power source (not illustrated) and placed orthogonal to a liquid surface of the electroplating liquid. Further, an anode plate (not illustrated), which is connected to an anode of the direct current power source (not illustrated), is placed on a side of the surface 10 a (i.e., surface on which the electroplating process is to be performed) of the substrate 10 . Then, the electroplating process is performed while oscillating the substrate 10 and the anode plate (not illustrated) in a horizontal direction. Thereby, the carbon nanotubes 21 can be evenly arranged on the surface 10 a of the substrate 10 . In addition, a part of each of the carbon nanotubes 21 can be formed protruding from the surface 22 a of the plating layer 22 .
- the carbon material layer 20 having the carbon nanotubes 21 provided in the plating layer 22 can also be formed by dispersing the carbon nanotube material 21 in the electroplating liquid used for forming the plating layer 22 and performing an electroplating process in the magnetic field by using the electroplating liquid.
- the heat radiation component 1 formed by the above-described method of the second embodiment can attain the same effects as the heat radiation component 1 of the first embodiment.
- an electroless plating method may be used instead of the electroplating method.
- Ni—P, Ni—B, or Cu may be used as the material of the plating layer 22 .
- the carbon nanotube material 21 is dispersed in an electroless plating liquid used for forming the plating layer 22 .
- the carbon material layer 20 having the carbon nanotubes 21 provided in the plating layer 22 is formed by performing an electroless plating process on the surface 10 a of the substrate 10 in the magnetic field M.
- example 1 a sample of the heat radiation component 1 manufactured with the method of the first embodiment was prepared (hereinafter also referred to as “example 1”).
- copper (Cu) was used as the material of the substrate 10
- nickel (Ni) was used as the material of the plating layer 22 .
- the thickness T (see FIG. 1 ) of the plating layer 22 was approximately 50 ⁇ m
- the protrusion amount L (see FIG. 1 ) of the protruding part of the carbon nanotubes is approximately 5 ⁇ m to 10 ⁇ m.
- a heat radiation component X manufactured with a method similar to the second embodiment was prepared (hereinafter also referred to as “comparative example X”). It is, however, to be noted that the comparative example X was manufactured without using the magnetic field generating apparatus (not illustrated). That is, the carbon material layer 20 having the carbon nanotubes 21 provided in the plating layer 22 was manufactured by dispersing the carbon nanotube material 21 in the electroplating liquid used for forming the plating layer 22 and performing an electroplating process by using the electroplating liquid in a state where no magnetic field M is generated.
- the carbon nanotubes 21 of the comparative example X were arranged in random directions with respect to the surface 10 a of the substrate 10 .
- the main difference between the carbon nanotubes 21 of the example 1 and the comparative example X is that the carbon nanotubes 21 of the example 1 were arranged (oriented) orthogonal to the surface 10 a of the substrate 10 whereas the carbon nanotubes 21 of the comparative example X were arranged in random directions with respect to the surface 10 a of the substrate 10 .
- each of the samples were attached to a predetermined block together with a heater and a thermometer.
- the heat radiation component 1 (example 1) and the heat radiation component X (example X) were alternately mounted on the block.
- the temperature for each of the samples was measured in a state where a constant voltage was applied to the heater for 30 minutes.
- the result of the measurement is illustrated in FIG. 4 .
- a sample having a small amount of temperature rise during 30 minutes signifies that the sample has a satisfactory heat radiating property.
- the temperature of the heat radiation component X (comparative example X) after the elapse of 30 minutes was approximately 68.3° C.
- the temperature of the heat radiation component 1 (example 1) after the elapse of 30 minutes was approximately 66.9° C.
- the heat radiating property of the heat radiation component 1 (example 1) is improved 1.4° C. in comparison with the heat radiating property of the heat radiation component X (comparative example X).
- the carbon nanotubes 21 of the heat radiation component X were arranged in random directions with respect to the surface 10 a of the substrate 10 . Therefore, some of the distal ends of the carbon nanotubes 21 of the heat radiation component X were bent or abutting the surface 2 a of the plating layer 22 . Thus, some of the carbon nanotubes 21 of the heat radiation component X were unable to contribute to heat radiation. As a result, it is evaluated that heat cannot be sufficiently radiated from the carbon nanotubes 21 of the heat radiation component X.
- the carbon nanotubes 21 of the heat radiation component 1 were arranged orthogonal to the surface 10 a of the substrate 10 . Therefore, hardly any of the distal ends of the carbon nanotubes 21 of the heat radiation component 1 were bent or abutting the surface 2 a of the plating layer 22 . Thus, almost all of the carbon nanotubes 21 included in the plating layer 22 of the heat radiation component 1 were able to contribute to heat radiation. As a result, it is evaluated that heat can be sufficiently radiated from the carbon nanotubes 21 of the heat radiation component 1 .
- the heat radiation component 1 (example 1) having carbon nanotubes 21 arranged orthogonal to the surface 10 a of the substrate 10 is confirmed to have an improved heat radiating property compared to the heat radiation component X (comparative example X) having carbon nanotubes 21 arranged in random directions with respect to the surface 10 a of the substrate 10 .
- a method for manufacturing a heat radiation component comprising:
- a method for manufacturing a heat radiation component comprising:
Abstract
A heat radiation component includes a substrate including a predetermined surface, a plurality of carbon materials arranged with spaces in between, and a plating layer having a surface and including a plating material that fills the spaces between the plurality of carbon materials. At least one of the plurality of carbon materials is oriented orthogonal to the predetermined surface of the substrate. A part of each of the plurality of carbon materials protrudes from the surface of the plating layer in a direction opposite to the substrate.
Description
- This application is based upon and claims the benefit of priority of the prior Japanese Patent Application No. 2012-173143 filed on Aug. 3, 2012, the entire contents of which are incorporated herein by reference.
- The embodiments discussed herein are related to a heat radiation component and a method for manufacturing a heat radiation component.
- A semiconductor device used for a CPU (Central Processing Unit) or the like generates heat at a high temperature during operation. Therefore, in order to form the semiconductor device to exhibit a satisfactory performance, it is important to rapidly radiate the heat outside the semiconductor device.
- Conventionally, a heat radiation component such as a heat spreader or a heat pipe is attached to the semiconductor device for ensuring a path to effectively radiate the heat generated by the semiconductor device. Further, studies are being conducted for improving the heat radiating (heat releasing) performance of the heat radiation component such as the heat spreader or the heat pipe. For example, as one approach for improving the heat radiating (heat releasing) performance of the heat radiation component, a metal layer having carbon materials (e.g., carbon nanotubes) distributed therein is formed on a surface of the heat radiation component (e.g., heat spreader, heat pipe).
- Some examples of a method for distributing carbon materials (e.g., carbon nanotubes) inside a metal layer are as follows. The first method is to arrange carbon nanotubes substantially in a vertical direction by injecting a plating liquid including carbon nanotubes into holes that are narrower than the fiber length of the carbon nanotubes (see, for example, Japanese Laid-Open Patent Publication No. 2006-152372). A second method is to form a metal plating layer by an electroplating process, so that carbon nanotubes are in a vertical direction along an electrical flux line (see, for example, Japanese Laid-Open Patent Publication No. 2001-283716).
- However, with the first method, although a portion of the carbon nanotubes can be arranged in a vertical direction, most of the carbon nanotubes are arranged diagonally with respect to the holes formed in a resist film of a substrate. With the second method, although the proportion of vertical carbon nanotubes may be increased, a large portion of the carbon nanotubes is still diagonally arranged because the power of the electrical flux line of the electroplating process is insufficient. Therefore, with the conventional methods, it is difficult for carbon materials (e.g., carbon nanotubes) to be entirely arranged in a vertical direction.
- According to an aspect of the invention, there is provided a heat radiation component including a substrate including a predetermined surface, a plurality of carbon materials arranged with spaces in between, and a plating layer having a surface and including a plating material that fills the spaces between the plurality of carbon materials. At least one of the plurality of carbon materials is oriented orthogonal to the predetermined surface of the substrate. A part of each of the plurality of carbon materials protrudes from the surface of the plating layer in a direction opposite to the substrate.
- The object and advantages of the invention will be realized and attained by means of the elements and combinations particularly pointed out in the claims.
- It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory and are not restrictive of the invention as claimed.
-
FIG. 1 is a cross-sectional view illustrating a heat radiation component according to a first embodiment of the present invention; -
FIGS. 2A and 2B are schematic diagrams for describing processes for manufacturing a heat radiation component according to the first embodiment of the present invention; -
FIGS. 3A and 3B are schematic diagrams for describing processes for manufacturing a heat radiation component according to a second embodiment of the present invention; and -
FIG. 4 is a graph illustrating the results for confirming a heat radiating property of a heat radiation component according to an embodiment of the present invention. - In the following, illustrative embodiments of the present invention are described with reference to the accompanying drawings. Throughout the drawings, like components/parts may be denoted with like reference numerals and further description thereof may be omitted.
- First, a structure of a heat radiation component according to a first embodiment of the present invention is described.
FIG. 1 is a cross-sectional view illustrating aheat radiation component 1 according to the first embodiment of the present invention. With reference toFIG. 1 , theheat radiation component 1 includes asubstrate 10 and acarbon material layer 20. - The
substrate 10 is preferably formed of a metal material having a satisfactory thermal conductivity. The metal material may be, for example, copper (Cu), aluminum (Al), iron (Fe), or an alloy including any of these metals. It is, however, to be noted that a material other than metal may be used as long as the material can provide a satisfactory thermal conductivity. - The
carbon material layer 20 includes aplating layer 22 formed on asurface 10 a of thesubstrate 10. Theplating layer 22 includescarbon nanotubes 21. Theplating layer 22 is formed filling the spaces between thecarbon nanotubes 21. The thickness T of theplating layer 22 is, for example, approximately 50 μm. Thecarbon nanotubes 21 are arranged (oriented) orthogonal to thesurface 10 a of thesubstrate 10. A part of each of thecarbon nanotubes 21 protrudes from a surface of theplating layer 22 in a direction opposite to thesubstrate 10. - In this embodiment, the term “orthogonal” does not only refer to the
carbon nanotubes 21 being completely orthogonal to thesurface 10 a of thesubstrate 10 but also to thecarbon nanotubes 21 being substantially orthogonal to thesurface 10 a of thesubstrate 10 to the extent of being able to attain the below-described effects of theheat radiation component 1. - The part of each of the
carbon nanotubes 21 protruding from asurface 22 a of theplating layer 22 may hereinafter also be referred to as a protruding part of thecarbon nanotube 21. The amount L by which the protruding part of thecarbon nanotube 21 protrudes from thesurface 22 a of the plating layer 22 (protrusion amount L) is, for example, approximately 5 μm to 10 μm. It is to be noted that thecarbon nanotubes 21 may have different protrusion amounts L. A projected area (from a plan view) of the protrusion parts of thecarbon nanotubes 21 is, for example, 3% or more with respect to the area of an upper surface of theplating layer 22. - In order to prevent degradation of heat radiation performance, the protrusion amount L is preferred to be greater than 5 μm. On the other hand, in order to prevent the
carbon nanotube 21 20, from being bent (damaged) or falling off from theplating layer 22, the protrusion amount L is preferred to be less than 10 μm. - The diameter of the
carbon nanotube 21 is, for example, approximately 100 nm to 300 nm. The length of thecarbon nanotube 21 is, for example, approximately 55 μm to 60 μm. For example, tens of thousands of carbon nanotubes are formed standing close together on thesurface 10 a of thesubstrate 10. - The material of the
plating layer 22 is preferably a metal having satisfactory thermal conductivity and having a rust-resistant property. For example, nickel (Ni), copper (Cu), cobalt (Co), gold, (Au), silver (Ag), or palladium (Pd) may be used as the material of theplating layer 22. - It is to be noted that other carbon materials such as carbon nano-fiber, graphite, or carbon black may be used instead of the
carbon nanotubes 21. Further, a combination of any of these carbon materials may be used instead of thecarbon nanotubes 21. - The
heat radiation component 1 can be applied to, for example, a vapor chamber, a heat pipe, a heat spreader, or a casing of an LED (Light Emitting Diode). That is, by attaching thesubstrate 10 of theheat radiation component 1 to a heat generating element (e.g., semiconductor device), the heat generated by the heat generating element can be rapidly transmitted to a surface of thecarbon material layer 20 via thesubstrate 10. - Next, a method for manufacturing a heat radiation component according to the first embodiment of the present invention is described.
FIGS. 2A and 2B are schematic diagrams for describing processes for manufacturing the heat radiation component of the first embodiment. In the process illustrated inFIG. 2A , thesubstrate 10 is prepared. Then, as illustrated inFIG. 2A , thecarbon nanotubes 21 are formed standing close together on thesubstrate 10, in a manner that thecarbon nanotubes 21 are arranged (oriented) in an orthogonal direction with respect to thesurface 10 a of thesubstrate 10. - The
substrate 10 is preferably formed of a metal material having a satisfactory thermal conductivity. The metal material may be, for example, copper (Cu), aluminum (Al), iron (Fe), or an alloy including any of these metals. It is, however, to be noted that a material other than metal may be used as long as the material can provide a satisfactory thermal conductivity. - The
carbon nanotubes 21 are formed directly on thesurface 10 a of thesubstrate 10 by using a CVD (Chemical Vapor Deposition) method, so that thecarbon nanotubes 21 are arranged in the orthogonal direction with respect to thesurface 10 a of thesubstrate 10. More specifically, thesubstrate 10 is placed in a heating furnace that is adjusted to a predetermined pressure and temperature. Then, thecarbon nanotubes 21 are formed on thesurface 10 a of thesubstrate 10 by performing a CVD process on thesubstrate 10. The pressure inside the heating furnace is, for example, approximately 100 Pa, and the temperature inside the heating furnace is, for example, approximately 600° C. The process gas used in the CVD process may be, for example, acetylene gas. The carrier gas used in the CVD process may be, for example, argon gas or hydrogen gas. - Thereby,
multiple carbon nanotubes 21, which are arranged in a direction orthogonal to thesurface 10 a of thesubstrate 10, are formed on thesurface 10 a of thesubstrate 10. Each of thecarbon nanotubes 21 has one end contacting thesurface 10 a of thesubstrate 10. - The diameter of the
carbon nanotube 21 is, for example, approximately 100 nm to 300 nm. The length of thecarbon nanotube 21 is, for example, approximately 55 μm to 60 μm. The number ofcarbon nanotubes 21 is, for example, approximately tens of thousands ofcarbon nanotubes 21. The length of the carbon nanotube 21 (distance from thesurface 10 a of thesubstrate 10 to a distal end of the carbon nanotube 21) can be controlled by adjusting the time of growth of thecarbon nanotube 21. - In a case where a material other than metal is used for the
substrate 10, a metal catalyst layer may be formed on thesurface 10 a of the substrate by using, for example, a sputtering method. In this case, thecarbon nanotubes 21 are formed on the metal catalyst layer by performing a CVD process on thesubstrate 10. For example, iron (Fe), cobalt (Co), or nickel (Ni) may be used to form the metal catalyst layer. The thickness of the metal catalyst layer is, for example, approximately a few nm. - Then, in the process illustrated in
FIG. 2B , theplating layer 22 is formed on thesurface 10 a of thesubstrate 10 to obtain acarbon material layer 20 that includes theplating layer 22 having thecarbon nanotubes 21 provided therein. In other words, theplating layer 22 is formed by filling (supplying) a plating material in the spaces between thecarbon nanotubes 21, so that a part of each of thecarbon nanotubes 21 protrudes from thesurface 22 a of theplating layer 22 in a direction opposite from thesubstrate 10. The thickness of theplating layer 22 is, for example, approximately 50 μm. - The amount L by which the protruding part of the
carbon nanotube 21 protrudes from thesurface 22 a of the plating layer 22 (protrusion amount L) is, for example, approximately 5 μm to 10 μm. It is to be noted that thecarbon nanotubes 21 may have different protrusion amounts L. A projected area (from a plan view) of the protrusion parts of thecarbon nanotubes 21 is, for example, 3% or more with respect to the area of an upper surface of theplating layer 22. - With the
heat radiation component 1 according to the first embodiment of the present invention, a part of each of the carbon nanotubes 21 (i.e., protruding part) protrudes from thesurface 22 a of theplating layer 22 in a direction opposite to thesubstrate 10. Accordingly, heat that is transmitted from thesubstrate 10 can be radiated from the protruding part of each of thecarbon nanotubes 21. Hence, the heat radiating property of thecarbon material layer 20 can be improved. - Further, because each of the
carbon nanotubes 21 is constituted by fibers that are oriented in a longitudinal direction of thecarbon nanotube 21, the orientation of the fibers can be sufficiently utilized to further improve the heat radiating property of thecarbon material layer 20. - Although the
plating layer 22 is formed by using the electroplating method according to the first embodiment, theplating layer 22 may be formed by using an electroless plating method. - In forming the
plating layer 22 with the electroless plating method, first, the above-described processes illustrated inFIG. 2A are performed. Then, an electroless plating process is performed on thesubstrate 10 instead of the electroplating method in the process illustrated inFIG. 2B . For example, Ni—P, Ni—B, or Cu may be used as the material of the electroless plating method. The same effects as those of the first embodiment can be attained by forming theplating layer 22 with the electroless plating method. - In the following second embodiment of the present invention, the
heat radiation component 1 is manufactured by using a method different from the method used in the first embodiment. In the second embodiment, like components/parts are denoted by the same reference numerals as the reference numerals of the first embodiment and are not further explained. -
FIGS. 3A and 3B are schematic diagrams for describing processes for manufacturing theheat radiation component 1 of the second embodiment. In the process illustrated inFIG. 3A , thesubstrate 10 is prepared. Then, thesubstrate 10 is placed in a magnetic field generating apparatus (not illustrated). By activating the magnetic field generating apparatus (not illustrated), a magnetic field M is generated in a direction orthogonal to thesurface 10 a of thesubstrate 10. For example, an apparatus using a superconducting magnet may be used as the magnetic field generating apparatus (not illustrated). The magnetic field M is, for example, approximately 5 T (teslas) to 10 T (teslas). The material used for thesubstrate 10 may be the same as the material used for thesubstrate 10 of the first embodiment. - Then, in the process illustrated in
FIG. 3B , thecarbon material layer 20 is formed having thecarbon nanotubes 21 provided in theplating layer 22. In other words, theplating layer 22 is formed by filling a plating material in the spaces between thecarbon nanotubes 21, so that a part of each of thecarbon nanotubes 21 protrudes from thesurface 22 a of theplating layer 22 in a direction opposite to thesubstrate 10. - More specifically, first, a material of the carbon nanotubes 21 (hereinafter also referred to as “
carbon nanotube material 21”) is dispersed in an electroplating liquid used for forming theplating layer 22. Then, the electroplating liquid having thecarbon nanotube material 21 dispersed therein is used to perform an electroplating process on thesurface 10 a of thesubstrate 10 inside the magnetic field M. Thereby, thecarbon material layer 20 is formed including theplating layer 22 having thecarbon nanotubes 21 provided therein. - For example, nickel (Ni), copper (Cu), cobalt (Co), gold (Au), silver (Ag), or palladium (Pd) may be used as the material of the
plating layer 22. A material that is not affected or hardly affected by the magnetic field M is preferred to be used as theplating layer 22. It is to be noted that theplating layer 22 is formed, so that a part of each of thecarbon nanotubes 22 protrudes from thesurface 22 a of the plating layer in a direction opposite to thesubstrate 10. - By dispersing a large amount of
carbon nanotube material 21 in the electroplating liquid used to form theplating layer 22 and applying the magnetic field M in a direction orthogonal to thesurface 10 a of thesubstrate 10, a large number ofcarbon nanotubes 21 can be formed on thesurface 10 a of thesubstrate 10 in a direction orthogonal to thesurface 10 a of the substrate. Details such as the thickness of theplating layer 22 or the amount in which thecarbon nanotubes 21 protrude from thesurface 22 a are substantially the same as those described in the first embodiment. It is to be noted that, in some cases, the ends of thecarbon nanotubes 21 of the second embodiment do not contact thesurface 10 a of thesubstrate 10. - It is preferable to blend the electroplating liquid used in
FIG. 3B with a polyacrylic acid to be used as a dispersing agent for dispersing thecarbon nanotube material 21. Further, it is also preferable to blend the electroplating liquid with an alkanediol compound, an alkenediol compound, or an alkynediol compound to be used as a brightening agent. - As the brightening agent, it is particularly preferable to use an alkynediol compound including alkynediol molecules having an oxyethylene side chain in which the oxyethylene side chain constitutes at least 20% by weight of the molecular weight of the alkynediol compound. It is preferable for the oxyethylene side chain to constitute 85% or less by weight of the molecular weight of the alkynediol compound.
- Further, it is preferable to blend the electroplating liquid with: an organic compound including a ketone group, an aldehyde group, or a carboxylic acid group; a carbon mono oxide compound with a coumarin derivative; an aryl aldehyde sulfone compound; a sulfone compound including an aryl group; an alkylene carboxy ester; an alkylene aldehyde; an acetylene derivative; a pyridinium compound; an alkane sulfonic compound; or an azo compound to be used as a surface activating agent. In dispersing the
carbon nanotube material 21 in the electroplating liquid, it is preferable to immerse thecarbon nanotube material 21 in a dispersing agent beforehand, so that the dispersibility of thecarbon nanotube material 21 is enhanced. Then, thecarbon nanotube material 21 having enhanced dispersibility is mixed with the electroplating liquid. - The amount of the
carbon nanotube material 21 mixed with the electroplating liquid (mixture amount) is preferably greater than or equal to 100 ppm (more preferably, equal to or greater than 500 ppm, even more preferably, equal to or greater than 1000 ppm). The upper limit of the mixture amount of thecarbon nanotube material 21 is approximately 1% by weight. In a case where the mixture amount of thecarbon nanotube material 21 exceeds 1% by weight, it becomes difficult to disperse thecarbon nanotube material 21. - When performing the electroplating process with the electroplating liquid having the
carbon nanotube material 21 dispersed therein, it is preferable to perform the electroplating process with a current density of 5 A/dm2 while agitating the electroplating liquid, so that thecarbon nanotube material 21 can be maintained in a dispersed state during the electroplating process. In a case where the electroplating process is performed with a current density exceeding 5 A/dm2, theplating layer 22 tends to be formed having a rugged surface. - Prior to performing the electroplating process, the
substrate 10 is connected to a cathode of a direct current power source (not illustrated) and placed orthogonal to a liquid surface of the electroplating liquid. Further, an anode plate (not illustrated), which is connected to an anode of the direct current power source (not illustrated), is placed on a side of thesurface 10 a (i.e., surface on which the electroplating process is to be performed) of thesubstrate 10. Then, the electroplating process is performed while oscillating thesubstrate 10 and the anode plate (not illustrated) in a horizontal direction. Thereby, thecarbon nanotubes 21 can be evenly arranged on thesurface 10 a of thesubstrate 10. In addition, a part of each of thecarbon nanotubes 21 can be formed protruding from thesurface 22 a of theplating layer 22. - Hence, the
carbon material layer 20 having thecarbon nanotubes 21 provided in theplating layer 22 can also be formed by dispersing thecarbon nanotube material 21 in the electroplating liquid used for forming theplating layer 22 and performing an electroplating process in the magnetic field by using the electroplating liquid. Theheat radiation component 1 formed by the above-described method of the second embodiment can attain the same effects as theheat radiation component 1 of the first embodiment. - In the processes illustrated in
FIG. 3B of the second embodiment, an electroless plating method may be used instead of the electroplating method. In this case, for example, Ni—P, Ni—B, or Cu may be used as the material of theplating layer 22. Further, thecarbon nanotube material 21 is dispersed in an electroless plating liquid used for forming theplating layer 22. Then, thecarbon material layer 20 having thecarbon nanotubes 21 provided in theplating layer 22 is formed by performing an electroless plating process on thesurface 10 a of thesubstrate 10 in the magnetic field M. - In order to confirm the heat radiating property, a sample of the
heat radiation component 1 manufactured with the method of the first embodiment was prepared (hereinafter also referred to as “example 1”). In the example 1, copper (Cu) was used as the material of thesubstrate 10, and nickel (Ni) was used as the material of theplating layer 22. The thickness T (seeFIG. 1 ) of theplating layer 22 was approximately 50 μm, and the protrusion amount L (seeFIG. 1 ) of the protruding part of the carbon nanotubes is approximately 5 μm to 10 μm. - Then, in order to compare with the heat radiating property of example 1, another sample of a heat radiation component X manufactured with a method similar to the second embodiment was prepared (hereinafter also referred to as “comparative example X”). It is, however, to be noted that the comparative example X was manufactured without using the magnetic field generating apparatus (not illustrated). That is, the
carbon material layer 20 having thecarbon nanotubes 21 provided in theplating layer 22 was manufactured by dispersing thecarbon nanotube material 21 in the electroplating liquid used for forming theplating layer 22 and performing an electroplating process by using the electroplating liquid in a state where no magnetic field M is generated. - As a result, although a part of each of the
carbon nanotubes 21 of the comparative example X protrudes from thesurface 22 a of theplating layer 22 in a direction opposite to thesubstrate 10, thecarbon nanotubes 21 of the comparative example X were arranged in random directions with respect to thesurface 10 a of thesubstrate 10. In other words, the main difference between thecarbon nanotubes 21 of the example 1 and the comparative example X is that thecarbon nanotubes 21 of the example 1 were arranged (oriented) orthogonal to thesurface 10 a of thesubstrate 10 whereas thecarbon nanotubes 21 of the comparative example X were arranged in random directions with respect to thesurface 10 a of thesubstrate 10. - After manufacturing the samples, each of the samples were attached to a predetermined block together with a heater and a thermometer. The heat radiation component 1 (example 1) and the heat radiation component X (example X) were alternately mounted on the block. Then, the temperature for each of the samples was measured in a state where a constant voltage was applied to the heater for 30 minutes. The result of the measurement is illustrated in
FIG. 4 . InFIG. 4 , a sample having a small amount of temperature rise during 30 minutes signifies that the sample has a satisfactory heat radiating property. - As illustrated in
FIG. 4 , the temperature of the heat radiation component X (comparative example X) after the elapse of 30 minutes was approximately 68.3° C. In contrast, the temperature of the heat radiation component 1 (example 1) after the elapse of 30 minutes was approximately 66.9° C. The heat radiating property of the heat radiation component 1 (example 1) is improved 1.4° C. in comparison with the heat radiating property of the heat radiation component X (comparative example X). - As described above, the
carbon nanotubes 21 of the heat radiation component X were arranged in random directions with respect to thesurface 10 a of thesubstrate 10. Therefore, some of the distal ends of thecarbon nanotubes 21 of the heat radiation component X were bent or abutting the surface 2 a of theplating layer 22. Thus, some of thecarbon nanotubes 21 of the heat radiation component X were unable to contribute to heat radiation. As a result, it is evaluated that heat cannot be sufficiently radiated from thecarbon nanotubes 21 of the heat radiation component X. - On the other hand, the
carbon nanotubes 21 of theheat radiation component 1 were arranged orthogonal to thesurface 10 a of thesubstrate 10. Therefore, hardly any of the distal ends of thecarbon nanotubes 21 of theheat radiation component 1 were bent or abutting the surface 2 a of theplating layer 22. Thus, almost all of thecarbon nanotubes 21 included in theplating layer 22 of theheat radiation component 1 were able to contribute to heat radiation. As a result, it is evaluated that heat can be sufficiently radiated from thecarbon nanotubes 21 of theheat radiation component 1. - Hence, the heat radiation component 1 (example 1) having
carbon nanotubes 21 arranged orthogonal to thesurface 10 a of thesubstrate 10 is confirmed to have an improved heat radiating property compared to the heat radiation component X (comparative example X) havingcarbon nanotubes 21 arranged in random directions with respect to thesurface 10 a of thesubstrate 10. - Various aspects of the subject-matter described herein are set out non-exhaustively in the following numbered clauses:
- 1. A method for manufacturing a heat radiation component, the method comprising:
-
- forming a plurality of carbon materials on a predetermined surface of a substrate by using a CVD (Chemical Vapor Deposition) method, the plurality of carbon materials being arranged with spaces in between and oriented orthogonal to the predetermined surface of the substrate; and
- forming a plating layer by filling a plating material in the spaces between the plurality of carbon materials, so that a part of each of the plurality of carbon materials protrudes from a surface of the plating layer in a direction opposite to the substrate.
- 2. A method for manufacturing a heat radiation component, the method comprising:
-
- applying a magnetic field in a direction orthogonal to a predetermined surface of a substrate; and
- forming a plating layer by performing a plating process on the predetermined surface of the substrate in the magnetic field by using a plating liquid having a carbon material dispersed therein;
- wherein the forming of the plating layer includes forming a plurality of carbon materials arranged with spaces in between and oriented orthogonal to the predetermined surface of the substrate, and filling a plating material in the spaces between the plurality of carbon materials, so that a part of each of the plurality of carbon materials protrudes from a surface of the plating layer in a direction opposite to the substrate.
- All examples and conditional language recited herein are intended for pedagogical purposes to aid the reader in understanding the invention and the concepts contributed by the inventor to furthering the art, and are to be construed as being without limitation to such specifically recited examples and conditions, nor does the organization of such examples in the specification relate to a showing of the superiority or inferiority of the invention. Although the embodiments of the present invention have been described in detail, it should be understood that the various changes, substitutions, and alterations could be made hereto without departing from the spirit and scope of the invention.
Claims (6)
1. A heat radiation component comprising:
a substrate including a predetermined surface;
a plurality of carbon materials arranged with spaces in between; and
a plating layer having a surface and including a plating material that fills the spaces between the plurality of carbon materials;
wherein at least one of the plurality of carbon materials is oriented orthogonal to the predetermined surface of the substrate,
wherein a part of each of the plurality of carbon materials protrudes from the surface of the plating layer in a direction opposite to the substrate.
2. The heat radiation component as claimed in claim 1 , wherein all of the plurality of carbon materials are oriented orthogonal to the predetermined surface of the substrate.
3. The heat radiation component as claimed in claim 1 , wherein the plurality of carbon materials include linear materials that stand close together on the predetermined surface of the substrate.
4. The heat radiation component as claimed in claim 1 , wherein at least one of the plurality of carbon materials includes an end that contacts the predetermined surface of the substrate.
5. The heat radiation component as claimed in claim 1 , wherein the plurality of carbon materials are formed of carbon nanotubes.
6. The heat radiation component as claimed in claim 1 , wherein the plating layer is formed of nickel.
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US20140124186A1 (en) * | 2012-11-08 | 2014-05-08 | Shinshu University | Radiation member |
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US20170067702A1 (en) * | 2015-09-07 | 2017-03-09 | Shinko Electric Industries Co., Ltd. | Heat transfer device and method of making heat transfer device |
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Also Published As
Publication number | Publication date |
---|---|
CN103579140A (en) | 2014-02-12 |
JP2014033104A (en) | 2014-02-20 |
TW201423920A (en) | 2014-06-16 |
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