US20130193122A1 - Laser processing apparatus - Google Patents
Laser processing apparatus Download PDFInfo
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- US20130193122A1 US20130193122A1 US13/736,198 US201313736198A US2013193122A1 US 20130193122 A1 US20130193122 A1 US 20130193122A1 US 201313736198 A US201313736198 A US 201313736198A US 2013193122 A1 US2013193122 A1 US 2013193122A1
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- laser beam
- pulsed laser
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Images
Classifications
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- B23K26/385—
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
- B23K26/382—Removing material by boring or cutting by boring
- B23K26/384—Removing material by boring or cutting by boring of specially shaped holes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/03—Observing, e.g. monitoring, the workpiece
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
- B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
- B23K26/382—Removing material by boring or cutting by boring
- B23K26/389—Removing material by boring or cutting by boring of fluid openings, e.g. nozzles, jets
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/71—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light thermally excited
- G01N21/718—Laser microanalysis, i.e. with formation of sample plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/16—Composite materials, e.g. fibre reinforced
- B23K2103/166—Multilayered materials
- B23K2103/172—Multilayered materials wherein at least one of the layers is non-metallic
Definitions
- the present invention relates to a laser processing apparatus for forming a laser processed hole in a workpiece configured by bonding a first member formed of a first material and a second member formed of a second material, the laser processed hole extending from the first member to the second member.
- a plurality of crossing division lines called streets are formed on the front side of a substantially disk-shaped semiconductor wafer to thereby partition a plurality of regions where devices such as ICs and LSIs are respectively formed.
- the semiconductor wafer is cut along the streets to thereby divide the regions where the devices are formed from each other, thus obtaining individual semiconductor chips.
- a module structure having a following configuration is in practical use. This module structure is such that a plurality of devices is stacked and bonding pads provided on each device are connected to each other.
- through holes are formed in a semiconductor wafer at positions corresponding to the bonding pads, and a conductive material such as aluminum is embedded in each via hole so as to be connected to the corresponding bonding pad (see Japanese Patent Laid-open No. 2003-163323, for example).
- Each via hole in the semiconductor wafer mentioned above is formed by using a drill.
- the diameter of each via hole in the semiconductor wafer is as small as 90 to 300 ⁇ m, so that the formation of each via hole by using a drill causes a reduction in productivity.
- a hole forming method for a wafer composed of a substrate and a plurality of devices formed on the front side of the substrate, a plurality of bonding pads being formed on each device, in which a pulsed laser beam is applied to the substrate from the back side thereof to thereby efficiently form a plurality of via holes respectively reaching the plural bonding pads see Japanese Patent Laid-open No. 2007-67082, for example).
- a wavelength of the pulsed laser beam is selected so as to have low absorptivity to a metal forming the bonding pads and have high absorptivity to a material forming the substrate, such as silicon and lithium tantalate.
- a material forming the substrate such as silicon and lithium tantalate.
- 2007-67082 there has been proposed a laser processing apparatus such that a laser beam is applied to a material to generate a plasma from the material, and a spectrum caused by this plasma and inherent in the material is detected to thereby determine that the laser beam has reached each bonding pad formed of metal (see Japanese Patent Laid-open No. 2009-125756, for example).
- Each bonding pad formed of metal is located at the bottom of a fine hole formed by applying a laser beam. Accordingly, even when the laser beam is applied to each bonding pad, it is difficult to capture a moment of proper generation of the plasma from the metal forming each bonding pad and then stop the application of the laser beam, causing a problem that each bonding pad may be melted to be perforated.
- a laser processing apparatus for forming a laser processed hole in a workpiece configured by bonding a first member formed of a first material and a second member formed of a second material, the laser processed hole extending from the first member to the second member, the laser processing apparatus including workpiece holding means for holding the workpiece; laser beam applying means for applying a pulsed laser beam to the workpiece held by the workpiece holding means; plasma detecting means for detecting a wavelength of plasma light generated by applying the pulsed laser beam from the laser beam applying means to the workpiece; and control means for controlling the laser beam applying means according to a detection signal from the plasma detecting means.
- the plasma detecting means includes a bandpass filter for passing only the wavelength of plasma light generated from the first material and a photodetector for detecting the light passed through the bandpass filter and outputting a light intensity signal to the control means.
- the control means controls the laser beam applying means so that, when the laser beam applying means is operated to apply the pulsed laser beam to the workpiece to thereby form the laser processed hole extending from the first member to the second member, the amplitude of a light intensity is detected according to the light intensity signal output from the photodetector, and the application of the pulsed laser beam is stopped after the amplitude of the light intensity is decreased to a predetermined value and a predetermined number of shots of the pulsed laser beam is next applied.
- the plasma detecting means for detecting the wavelength of plasma light generated by applying the pulsed laser beam from the laser beam applying means to the workpiece includes the bandpass filter for passing only the wavelength of plasma light generated from the first material and the photodetector for detecting the light passed through the bandpass filter and outputting the light intensity signal to the control means.
- the control means for controlling the laser beam applying means according to the detection signal from the plasma detecting means controls the laser beam applying means so that, when the laser beam applying means is operated to apply the pulsed laser beam to the workpiece to thereby form the laser processed hole extending from the first member to the second member, the amplitude of the light intensity is detected according to the light intensity signal output from the photodetector, and the application of the pulsed laser beam is stopped after the amplitude of the light intensity is decreased to the predetermined value and the predetermined number shots of the pulsed laser beam is next applied.
- the application of the pulsed laser beam is stopped at the time the laser processed hole (fine hole) formed in the first member by applying the pulsed laser beam thereto has reached the second member, so that there is no possibility that the second member may be melted.
- the workpiece is a wafer including a lithium tantalate substrate (first member), a plurality of devices formed on the front side of the substrate, and a plurality of bonding pads (second member) provided on each device and that the plural laser processed holes respectively extend from the back side of the lithium tantalate substrate (first member) to the plural bonding pads (second member), there is no possibility that each bonding pad (second member) may be melted to be perforated.
- FIG. 1 is a perspective view of a laser processing apparatus according to a preferred embodiment of the present invention
- FIG. 2 is a block diagram showing a configuration laser beam applying means included in the laser processing apparatus shown in FIG. 1 ;
- FIG. 3 is a block diagram showing a configuration of plasma detecting means included in the laser processing apparatus shown in FIG. 1 ;
- FIG. 4 is a block diagram showing a configuration of control means included in the laser processing apparatus shown in FIG. 1 ;
- FIG. 5 is a plan view of a semiconductor wafer as a workpiece
- FIG. 6 is an enlarged plan view of part of the semiconductor wafer shown in FIG. 5 ;
- FIG. 7 is a perspective view showing a condition where the semiconductor wafer shown in FIG. 5 is attached to a protective tape supported to an annular frame;
- FIG. 8 is a plan view showing a relation between the semiconductor wafer shown in FIG. 5 and coordinates in a condition where the wafer is held at a predetermined position on a chuck table included in the laser processing apparatus shown in FIG. 1 ;
- FIGS. 9A and 9B are views for illustrating a hole forming step to be performed by the laser processing apparatus shown in FIG. 1 ;
- FIGS. 10A and 10B are views similar to FIGS. 9A and 9B , showing the step subsequent to the step shown in FIGS. 9A and 9B ;
- FIG. 11 is a graph showing an output voltage from a photodetector for detecting the light intensity of plasma light generated by applying a pulsed laser beam to a lithium tantalate substrate.
- FIG. 1 is a perspective view of a laser processing apparatus 1 according to the present invention.
- the laser processing apparatus 1 shown in FIG. 1 includes a stationary base 2 , a chuck table mechanism 3 for holding a workpiece, the chuck table mechanism 3 being provided on the stationary base 2 so as to be movable in a feeding direction (X direction) shown by an arrow X, a laser beam applying unit supporting mechanism 4 provided on the stationary base 2 so as to be movable in an indexing direction (Y direction) shown by an arrow Y perpendicular to the X direction, and a laser beam applying unit 5 provided on the laser beam applying unit supporting mechanism 4 so as to be movable in a focal position adjusting direction (Z direction) shown by an arrow Z.
- X direction feeding direction
- Y direction indexing direction
- Z direction focal position adjusting direction
- a lower surface of the first slide block 32 is formed with a pair of guided grooves 321 for slidably engaging the pair of guide rails 31 mentioned above.
- a pair of guide rails 322 is provided on an upper surface of the first slide block 32 so as to extend parallel to each other in the Y direction. Accordingly, the first slide block 32 is movable in the X direction along the guide rails 31 by the slidable engagement of the guided grooves 321 with the guide rails 31 .
- the chuck table mechanism 3 in the shown embodiment further includes feeding means 37 (X direction moving means) for moving the first slide block 32 in the X direction along the guide rails 31 .
- the feeding means 37 includes an externally threaded rod 371 extending parallel to the guide rails 31 so as to be interposed therebetween and a pulse motor 372 as a drive source for rotationally driving the externally threaded rod 371 .
- the externally threaded rod 371 is rotatably supported at one end thereof to a bearing block 373 fixed to the stationary base 2 and is connected at the other end to an output shaft of the pulse motor 372 so as to receive the torque thereof.
- the externally threaded rod 371 is engaged with a tapped through hole formed in an internally threaded block not shown) projecting from the lower surface of the first slide block 32 at a central portion thereof. Accordingly, the first slide block 32 is moved in the X direction along the guide rails 31 by operating the pulse motor 372 to normally or reversely rotate the externally threaded rod 371 .
- the laser processing apparatus 1 includes X position detecting means 374 for detecting the feed amount, or X position of the chuck table 36 .
- the X position detecting means 374 includes a linear scale 374 a extending along one of the guide rails 31 and a read head 374 b provided on the first slide block 32 and movable along the linear scale 374 a together with the first slide block 32 .
- the read head 374 b of the X position detecting means 374 transmits a pulse signal of one pulse every 1 ⁇ m in this preferred embodiment to control means which will be hereinafter described. This control means counts the number of pulses as the pulse signal input from the read head 374 b to thereby detect the feed amount, or X position of the chuck table 36 .
- the number of pulses as a drive signal output from the control means to the pulse motor 372 may be counted by the control means to thereby detect the feed amount, or X position of the chuck table 36 .
- a servo motor is used as the drive source for the feeding means 37
- a pulse signal output from a rotary encoder for detecting the rotational speed of the servo motor may be sent to the control means, and the number of pulses as the pulse signal input from the rotary encoder into the control means may be counted by the control means to thereby detect the feed amount, or X position of the chuck table 36 .
- the laser processing apparatus 1 includes Y position detecting means 384 for detecting the index amount, or Y position of the chuck table 36 .
- the Y position detecting means 384 includes a linear scale 384 a extending along one of the guide rails 322 and a read head 384 b provided on the second slide block 33 and movable along the linear scale 384 a together with the second slide block 33 .
- the read head 384 b of the Y position detecting means 384 transmits a pulse signal of one pulse every 1 ⁇ m in this preferred embodiment to the control means which will be hereinafter described. This control means counts the number of pulses as the pulse signal input from the read head 384 b to thereby detect the index amount, or Y position of the chuck table 36 .
- the laser beam applying unit supporting mechanism 4 in the shown embodiment further includes second indexing means (second Y direction moving means) for moving the movable support base 42 in the Y direction along the guide rails 41 .
- the second indexing means 43 includes an externally threaded rod 431 extending parallel to the guide rails 41 so as to be interposed therebetween and a pulse motor 432 as a drive source for rotationally driving the externally threaded rod 431 .
- the externally threaded rod 431 is rotatably supported at one end thereof to a bearing block (not shown) fixed to the stationary base 2 and is connected at the other end to an output shaft of the pulse motor 432 so as to receive the torque thereof.
- the externally threaded rod 431 is engaged with a tapped through hole formed in an internally threaded block (not shown) projecting from a lower surface of the horizontal portion 421 at a central portion thereof. Accordingly, the movable support base 42 is moved in the Y direction along the guide rails 41 by operating the pulse motor 432 to normally or reversely rotate the externally threaded rod 431 .
- the laser beam applying unit 5 includes a unit holder 51 and laser beam applying means 52 mounted to the unit holder 51 .
- the unit holder 51 is formed with a pair of guided grooves 511 for slidably engaging the pair of guide rails 423 provided on the vertical portion 422 of the movable support base 42 . Accordingly, the unit holder 51 is supported to the movable support base 42 so as to be movable in the Z direction by the slidable engagement of the guided grooves 511 with the guide rails 423 .
- the laser beam applying unit 5 further includes focal position adjusting means 53 (Z direction moving means) for moving the unit holder 51 along the guide rails 423 in the Z direction.
- the focal position adjusting means 53 includes an externally threaded rod (not shown) extending parallel to the guide rails 423 so as to be interposed therebetween and a pulse motor 532 as a drive source for rotationally driving this externally threaded rod. Accordingly, the unit holder 51 and the laser beam applying means 52 are moved in the Z direction along the guide rails 423 by operating the pulse motor 532 to normally or reversely rotate this externally threaded rod. In this preferred embodiment, when the pulse motor 532 is normally operated, the laser beam applying means 52 is moved upward, whereas when the pulse motor 532 is reversely operated, the laser beam applying means 52 is moved downward.
- the laser beam applying means 52 includes a cylindrical casing 521 disposed so as to extend in a substantially horizontal direction, pulsed laser beam oscillating means 6 (see FIG. 2 ) provided in the casing 521 , acoustooptic deflecting means 7 (see FIG. 2 ) as light deflecting means for deflecting a beam axis of a laser beam oscillated by the pulsed laser beam oscillating means 6 in the feeding direction (X direction), and focusing means 8 (see FIGS. 1 and 2 ) for applying the pulsed laser beam passed through the acoustooptic deflecting means 7 to a workpiece W held on the chuck table 36 .
- the pulsed laser beam oscillating means 6 is composed of a pulsed laser beam oscillator 61 such as a FAG laser oscillator or a YVO4 laser oscillator and repetition frequency setting means 62 connected to the pulsed laser beam oscillator 61 .
- the pulsed laser beam oscillator 61 functions to oscillate a pulsed laser beam (LB) having a predetermined frequency set by the repetition frequency setting means 62 .
- the repetition frequency setting means 62 functions to set the repetition frequency of the pulsed laser beam to be oscillated by the pulsed laser beam oscillator 61 .
- the acoustooptic deflecting means 7 includes an acoustooptic device 71 for deflecting the beam axis of the pulsed laser beam (LB) oscillated by the pulsed laser beam oscillating means 6 , an RF oscillator 72 for generating an RF (radio frequency) signal to be applied to the acoustooptic device 71 , an RF amplifier 73 for amplifying the power of the RF signal generated by the RF oscillator 72 and applying the amplified RF signal to the acoustooptic device 71 , deflection angle adjusting means 74 for adjusting the frequency of the RF signal to be generated by the RF oscillator 72 , and power adjusting means 75 for adjusting the amplitude of the RF signal to be generated by the RF oscillator 72 .
- acoustooptic device 71 for deflecting the beam axis of the pulsed laser beam (LB) oscillated by the pulsed laser beam oscillating means 6
- the acoustooptic device 71 can adjust the angle of deflection of the beam axis of the pulsed laser beam according to the frequency of the RF signal applied and can also adjust the power of the pulsed laser beam according to the amplitude of the RF signal applied.
- the acoustooptic deflecting means 7 as the light deflecting means may be replaced by electrooptic deflecting means using an electrooptic device.
- the deflection angle adjusting means 74 and the power adjusting means 75 are controlled by the control means to be described later.
- the laser beam applying means 52 further includes laser beam absorbing means 76 for absorbing the pulsed laser beam deflected by the acoustooptic device 71 as shown by a broken line in FIG. 2 in the case that an RF signal having a predetermined frequency is applied to the acoustooptic device 71 .
- the focusing means 8 is mounted at a front end of the casing 521 and it includes direction changing mirror 81 for downwardly changing the traveling direction of the pulsed laser beam deflected by the acoustooptic deflecting means 7 and a focusing lens 82 provided by a telecentric lens for focusing the pulsed laser beam whose traveling direction has been changed by the direction changing mirror 81 .
- the laser beam applying means 52 is configured in the above described manner and its operation will now be described with reference to FIG. 2 .
- a voltage of 5 V for example, is applied from the control means to the deflection angle adjusting means 74 of the acoustooptic deflecting means 7 and an RF signal having a frequency corresponding to 5 V is applied to the acoustooptic device 71
- the pulsed laser beam oscillated by the pulsed laser beam oscillating means 6 is deflected in beam axis as shown by a single dot and dash line in FIG. 2 and focused at a focal point Pa.
- the pulsed laser beam oscillated by the pulsed laser beam oscillating means 6 is deflected in beam axis as shown by a solid line in FIG. 2 and focused at a focal point Pb displaced from the focal point Pa to the left as viewed in FIG. 2 in the feeding direction (X direction) by a predetermined amount.
- the pulsed laser beam oscillated by the pulsed laser beam oscillating means 6 is deflected in beam axis as shown by a double dot and dash line in FIG. 2 and focused at a focal point Pc displaced from the focal point Pb to the left as viewed in FIG. 2 in the X direction by a predetermined amount.
- the pulsed laser beam oscillated by the pulsed laser beam oscillating means 6 is led to the laser beam absorbing means 76 as shown by the broken line in FIG. 2 .
- the pulsed laser beam is deflected in the X direction by the acoustooptic device 71 according to the voltage applied to the deflection angle adjusting means 74 .
- the laser processing apparatus 1 further includes plasma detecting means 9 mounted on the casing 521 of the laser beam applying means 52 constituting the laser beam applying unit 5 for detecting plasma light generated by applying the laser beam from the laser beam applying means 52 to the workpiece W. As shown in FIG.
- the plasma detecting means 9 includes plasma capturing means 91 for capturing plasma light generated by applying the laser beam from the focusing means 8 of the laser beam applying means 52 to the workpiece W held on the chuck table 36 , a dichroic mirror 92 for separating the plasma light captured by the plasma capturing means 91 into a first optical path 92 a and a second optical path 92 b, a first bandpass filter 93 provided on the first optical path 92 a for passing only the light having a first set wavelength (the wavelength to be generated from a first material forming a first member of the workpiece W to be hereinafter described), a first photodetector 94 for detecting the light passed through the first bandpass filter 93 to output a light intensity signal, a direction changing mirror 95 provided on the second optical path 92 b, a second bandpass filter 96 for passing only the light having a second set wavelength (the wavelength to be generated from a second material farming a second member of the workpiece W to be hereinafter described) after the light
- the plasma capturing means 91 is composed of a focusing lens 911 and a lens case 912 for accommodating the focusing lens 911 .
- the lens case 912 is mounted on the casing 521 of the laser beam applying means 52 .
- the lens case 912 is provided with an angle adjusting knob 913 for adjusting the installation angle of the focusing lens 911 .
- the first bandpass filter 93 is so configured as to pass the light having a wavelength range of 660 to 680 nm because only the wavelength (670 nm) of plasma light to be generated from lithium tantalate is to be passed.
- the second bandpass filter 96 is so configured as to pass the light having a wavelength range of 500 to 540 nm because only the wavelength (515 nm) of plasma light to be generated from copper is to be passed.
- the first photodetector 94 detects the light passed through the first bandpass filter 93 and outputs to the control means a voltage signal corresponding to the intensity of the light detected.
- the second photodetector 97 detects the light passed through the second bandpass filter 96 and outputs to the control means a voltage signal corresponding to the intensity of the light detected.
- the plasma detecting means 9 in this preferred embodiment uses the dichroic mirror 92 to separate the plasma light captured by the plasma capturing means 91 into the first optical path 92 a and the second optical path 92 b
- the dichroic mirror 92 may be replaced by a beam splitter.
- the laser processing apparatus 1 further includes imaging means 11 provided at a front end portion of the casing 521 for imaging a subject area to be laser-processed by the laser beam applying means 52 .
- the imaging means 11 includes an ordinary imaging device (CCD) for imaging by using visible light, infrared light applying means for applying infrared light to the workpiece W, an optical system for capturing the infrared light applied by the infrared light applying means, and an imaging device (infrared CCD) for outputting an electrical signal corresponding to the infrared light captured by the optical system.
- An image signal output from the imaging means 11 is transmitted to the control means described below.
- the laser processing apparatus 1 includes the control means 20 shown in FIG. 4 .
- the control means 20 is configured by a computer, and it includes a central processing unit (CPU) 201 for performing operational processing according to a control program, a read only memory (ROM) 202 storing the control program and the like, a readable and writable random access memory (RAM) 203 for storing a control map to be described later, data on design value for the workpiece W, the results of computation, etc., a counter 204 , an input interface 205 , and an output interface 206 .
- CPU central processing unit
- ROM read only memory
- RAM readable and writable random access memory
- Detection signals from the X position detecting means 374 , the Y position detecting means 384 , the first and second photodetectors 94 and 97 of the plasma detecting means 9 , and the imaging means 11 are input into the input interface 205 of the control means 20 .
- control signals are output from the output interface 206 of the control means 20 to the pulse motor 372 , the pulse motor 382 , the pulse motor 432 , the pulse motor 532 , the laser beam applying means 52 , and display means 200 .
- FIG. 5 is a plan view of a wafer 30 as the workpiece W to be laser-processed.
- the wafer 30 in the preferred embodiment shown in FIG. 5 is formed from a lithium tantalate substrate 300 (first member) having a thickness of 300 ⁇ m, for example.
- a plurality of crossing division lines 301 are formed on a front side 300 a of the substrate 300 , thereby partitioning a plurality of rectangular regions where a plurality of devices 302 are respectively formed. All of the devices 302 have the same configuration.
- a plurality of bonding pads 303 ( 303 a to 303 j ) (second member) are formed on a front side of each device 302 .
- these bonding pads 303 ( 303 a to 303 j ) as the second member are formed of copper.
- the bonding pads 303 a and 303 f have the same X position
- the bonding pads 303 b and 303 g have the same X position
- the bonding pads 303 c and 303 h have the same X position
- the bonding pads 303 d and 303 i have the same X position
- the bonding pads 303 e and 303 j have the same X position.
- a processed hole (via hole) is formed so as to extend from a back side 300 b of the substrate 300 to each of the bonding pads 303 ( 303 a to 303 j ).
- the bonding pads 303 ( 303 a to 303 j ) are equally spaced at given intervals A in the X direction (horizontal direction as viewed in FIG. 6 ). More specifically, the spacing A between the bonding pads 303 a and 303 b is equal to the spacing between the bonding pads 303 b and 303 c, the spacing between the bonding pads 303 c and 303 d, the spacing between the bonding pads 303 d and 303 e, the spacing between the bonding pads 303 f and 303 g, the spacing between the bonding pads 303 g and 303 h, the spacing between the bonding pads 303 h and 303 i, and the spacing between the bonding pads 303 i and 303 j.
- the adjacent bonding pads 303 are equally spaced at given intervals B in the X direction. More specifically, the spacing B between the bonding pads 303 e and 303 a in the adjacent devices 302 in the X direction is equal to the spacing between the bonding pads 303 j and 303 f in the adjacent devices 302 in the X direction. Further, in each device 302 , the bonding pads 303 ( 303 a to 303 j ) are equally spaced at given intervals C in the Y direction (vertical direction as viewed in FIG. 6 ).
- the spacing C between the bonding pads 303 a and 303 f is equal to the spacing between the bonding pads 303 h and 303 g, the spacing between the bonding pads 303 c and 303 h, the spacing between the bonding pads 303 d and 303 l, and the spacing between the bonding pads 303 e and 303 j.
- the adjacent bonding pads 303 are equally spaced at given intervals D in the Y direction.
- the spacing D between the bonding pads 303 f and 303 a in the adjacent devices 302 in the Y direction is equal to the spacing between the bonding pads 303 g and 303 b in the adjacent devices 302 in the Y direction, the spacing between the bonding pads 303 h and 303 c in the adjacent devices 302 in the Y direction, the spacing between the bonding pads 303 i and 303 d in the adjacent devices 302 in the Y direction, and the spacing between the bonding pads 303 j and 303 e in the adjacent devices 302 in the Y direction.
- the wafer 30 configured in the above described manner, referring to FIG.
- the back side 300 b of the substrate 300 constituting the wafer 30 attached to the protective tape 50 is oriented upward.
- the wafer 30 supported through the protective tape 50 to the annular frame 40 is placed on the chuck table 36 of the laser processing apparatus 1 shown in FIG. 1 in the condition where the protective tape 50 comes into contact with an upper surface of the chuck table 36 .
- the suction means (not shown) is operated to hold the wafer 30 through the protective tape 50 on the chuck table 36 under suction. Accordingly, the wafer 30 is held on the chuck table 36 in the condition where the back side 300 b of the substrate 300 constituting the wafer 30 is oriented upward.
- the annular frame 40 is fixed by the clamp 362 .
- the feeding means 37 is operated to move the chuck table 36 holding the wafer 30 under suction to a position directly below the imaging means 11 .
- the wafer 30 on the chuck table 36 is set at a coordinate position shown in FIG. 8 .
- an alignment operation is performed to detect whether or not the crossing division lines 301 of the wafer 30 held on the chuck table 36 are parallel to the X direction and the Y direction. That is, the imaging means 11 is operated to image the wafer 30 held on the chuck table 36 and perform image processing such as pattern matching, thus performing the alignment operation.
- the division lines 301 of the wafer 30 can be imaged from the back side 300 b through the substrate 300 of the wafer 30 because the lithium tantalate substrate 300 constituting the wafer 30 is transparent.
- the chuck table 36 is moved to position the leftmost device 302 on the uppermost row E 1 as viewed in FIG. 8 directly below the imaging means 11 . Further, a left upper electrode (bonding pad) 303 a of electrodes (bonding pads) 303 ( 303 a to 303 j ) in this leftmost device 302 as viewed in FIG. 8 is positioned directly below the imaging means 11 . In this condition, the electrode 303 a is detected by the imaging means 11 and a coordinate value (a 1 ) for the electrode 303 a is sent as a first feed start position coordinate value to the control means 20 .
- the chuck table 36 After detecting the first feed start position coordinate value (a 1 ) in the leftmost device 302 on the uppermost row E 1 as viewed in FIG. 8 , the chuck table 36 is moved in the Y direction by the pitch of the division lines 301 and also moved in the X direction to position the leftmost device 302 on the second uppermost row E 2 as viewed in FIG. 8 directly below the imaging means 11 . Further, the left upper electrode 303 a of the electrodes 303 ( 303 a to 303 j ) in this leftmost device 302 as viewed in FIG. 8 is positioned directly below the imaging means 11 .
- the electrode 303 a is detected by the imaging means 11 and a coordinate value (a 2 ) for the electrode 303 a is sent as a second feed start position coordinate value to the control means 20 .
- the control means 20 stores this coordinate value (a 2 ) as the second feed start position coordinate value into the random access memory (RAM) 203 .
- the imaging means 11 and the focusing means 8 of the laser beam applying means 52 are spaced a predetermined distance in the X direction. Accordingly, the sum of the X coordinate value constituting the second feed start position coordinate value and the above distance between the imaging means 11 and the focusing means 8 is stored into the RAM 203 .
- control means 20 repeatedly performs the indexing operation (stepwise movement in the Y direction) and the feed start position detecting step mentioned above until the lowermost row En as viewed in FIG. 8 to detect the feed start position coordinate values (a 3 to an) for the leftmost devices 302 on the other rows (E 3 to En) and store these coordinate values into the random access memory (RAM) 203 .
- a hole forming step is performed to form a laser processed hole (via hole) from the back side of the substrate 300 of the wafer 30 at each of the electrodes 303 ( 303 a to 303 j ) formed in each device 302 .
- the feeding means 37 is first operated to move the chuck table 36 so that the bonding pad 303 a corresponding to the first feed start position coordinate value (a 1 ) stored in the random access memory (RAM) 203 is positioned directly below the focusing means 8 of the laser beam applying means 52 .
- FIG. 9A shows this condition where the bonding pad 303 a corresponding to the first feed start position coordinate value (a 1 ) is positioned directly below the focusing means 8 .
- control means 20 outputs a control signal for controlling the deflection angle adjusting means 74 and the power adjusting means 75 of the acoustooptic deflecting means 7 according to a detection signal from the read head 374 b of the X position detecting means 374 .
- the RF oscillator 72 outputs an RF signal corresponding to the control signal from the deflection angle adjusting means 74 and the power adjusting means 75 .
- the power of the RF signal output from the RF oscillator 72 is amplified by the RF amplifier 73 , and the amplified RF signal is applied to the acoustooptic device 71 .
- the acoustooptic device 71 deflects the beam axis of the pulsed laser beam oscillated by the pulsed laser beam oscillating means 6 in the range from the position shown by the single dot and dash line in FIG. 2 to the position shown by the double dot and dash line in FIG.
- the hole forming step mentioned above may be performed under the following processing conditions.
- Light source LD pumped Q-switched Nd:YVO4 pulsed laser
- Pulse width 10 ps
- Focused spot diameter ⁇ 15 ⁇ m
- the control means 20 operates the counter 204 to count the number of shots of the pulsed laser beam oscillated by the pulsed laser beam oscillating means 6 and also operates the plasma detecting means 9 to input a light intensity signal from the first photodetector 94 .
- the light intensity signal to be output from the first photodetector 94 will now be described.
- the pulsed laser beam is applied to a transparent member of lithium tantalate, for example, the surface of the transparent member is roughened by a first operation of the pulsed laser beam and the roughened surface of the transparent member is next ablated by a second operation of the pulsed laser beam.
- the pulsed laser beam is applied to a transparent member of lithium tantalate, for example, the roughening and the ablation of the surface of the transparent member are repeatedly performed.
- the light intensity of plasma light generated from the transparent member by the ablation is higher than the light intensity of plasma light generated from the transparent member by the roughening. Accordingly, when the pulsed laser beam is applied to a transparent member of lithium tantalate, for example, the light intensity of plasma light varies every time each pulse of the pulsed laser beam is applied.
- FIG. 11 shows an output voltage from the first photodetector 94 for detecting the light intensity of plasma light generated by applying the pulsed laser beam to the lithium tantalate substrate 300 .
- a horizontal axis represents the number of shots of the pulsed laser beam
- a vertical axis represents voltage (V).
- a lower limit of voltage in each shot of the pulsed laser beam corresponds to the light intensity of plasma light generated by the first operation of pulsed laser beam to roughen the surface of a transparent member
- an upper limit of voltage in each shot of the pulsed laser beam corresponds to the light intensity of plasma light generated by the second operation of pulsed laser beam to ablate the roughened surface of the transparent member.
- FIG. 11 shows an output voltage from the first photodetector 94 for detecting the light intensity of plasma light generated by applying the pulsed laser beam to the lithium tantalate substrate 300 .
- a horizontal axis represents the number of shots of the pulsed laser beam
- a vertical axis represents voltage (V).
- the output voltage from the first photodetector 94 varies in a range from 1.5 V to 3 V with an amplitude of about 1.1 V until the number of shots of the pulsed laser beam becomes about 60.
- the number of shots of the pulsed laser beam exceeds 60, both the upper limit and the lower limit of the output voltage are gradually decreased.
- the amplitude (the range of variations) of the output voltage from the first photodetector 94 is gradually decreased.
- the output voltage from the first photodetector 94 becomes zero, which means that the processing of the lithium tantalite substrate 300 has been finished.
- the time of stopping the application of the pulsed laser beam can be set by experimentally determining how many shots of the pulsed laser beam should be applied from the time the amplitude of the output voltage from the first photodetector 94 is decreased to a predetermined value (0.1 V) to the time the pulsed laser beam reaches the bonding pad 303 a.
- the plasma detecting means 9 includes the second bandpass filter 96 allowing the pass of only the wavelength (515 nm) of plasma light generated from copper in the wavelength range of plasma light guided to the second optical path 92 b and also includes the second photodetector 97 for detecting the plasma light passed through the second bandpass filter 96 to output a light intensity signal. Accordingly, the moment of processing of the bonding pad 303 a can be captured.
- the application of the pulsed later beam is to be stopped after the amplitude of the output voltage from the first photodetector 94 is decreased to the predetermined value (0.1 V) and then five shots of the pulsed laser beam are applied.
- the control means 20 determines that the pulsed laser beam has reached the bonding pad 303 a formed of copper and then applies a voltage of 0 V to the deflection angle adjusting means 74 of the acoustooptic deflecting means 7 . Accordingly, an RF signal having a frequency corresponding to 0 V is applied to the acoustooptic device 71 , so that the pulsed laser beam oscillated by the pulsed laser beam oscillating means 6 is led to the laser beam absorbing means 76 as shown by the broken line in FIG. 2 . Accordingly, the pulsed laser beam is not applied to the wafer 30 held on the chuck table 36 , thereby preventing the bonding pad 303 a from being melted to be perforated.
- the control means 20 inputs a detection signal from the read head 374 b of the X position detecting means 374 and counts this detection signal through the counter 204 .
- the control means 20 controls the laser beam applying means 52 to similarly perform the hole forming step.
- the control means 20 operates the laser beam applying means 52 to similarly perform the hole forming step.
- the control means 20 controls the first indexing means 38 to index the focusing means 8 of the laser beam applying means 52 in a direction perpendicular to the sheet plane of FIG. 9B , i.e., in the Y direction.
- the control means 20 inputs a detection signal from the read head 384 b of the Y position detecting means 384 and counts this detection signal through the counter 204 .
- the count value by the counter 204 reaches a value corresponding to the spacing C of the bonding pads 303 in the Y direction shown in FIG. 6 , the operation of the first indexing means 38 is stopped to stop the indexing of the focusing means 8 .
- FIG. 10A shows this condition where the focusing means 8 is positioned directly above the bonding pad 303 j in the rightmost device 302 on the uppermost row E 1 .
- the control means 20 controls the feeding means 37 to feed the chuck table 36 in a direction shown by an arrow X 2 in FIG. 10A at a predetermined feed speed.
- the control means 20 operates the laser beam applying means 52 to perform the hole forming step.
- the control means 20 inputs a detection signal from the read head 374 b of the X position detecting means 374 and counts this detection signal through the counter 204 . Every time the count value reaches the coordinate value for each bonding pad 303 ( 303 j to 303 f ), the control means 20 operates the laser beam applying means 52 to similarly perform the hole forming step.
- the hole forming step is performed at the position of the leftmost bonding pad 303 f in the leftmost device 302 on the uppermost row E 1 of the wafer 30 as shown in FIG. 10B , the operation of the feeding means 37 is stopped to stop the movement of the chuck table 36 .
- the laser processed holes 304 are formed through the substrate 300 of the wafer 30 on the back side of the bonding pads 303 in each device 302 on the uppermost row E 1 as described above.
- the control means 20 operates the feeding means 37 and the first indexing means 38 to position the bonding pad 303 a corresponding to the second feed start position coordinate value (a 2 ) directly below the focusing means 8 of the laser beam applying means 52 , the bonding pad 303 a corresponding to the second feed start position coordinate value (a 2 ) being formed in the leftmost device 302 on the second uppermost row E 2 of the wafer 30 and being stored in the random access memory (RAM) 203 .
- RAM random access memory
- control means 20 controls the laser beam applying means 52 , the feeding means 37 , and the first indexing means 38 to perform the hole forming step on the back side of the bonding pads 303 in the other devices 302 on the second uppermost row E 2 of the wafer 30 .
- the hole forming step is similarly performed on the back side of the bonding pads 303 in the devices 302 on the other rows E 3 to En of the wafer 30 .
- a plurality of laser processed holes 304 on the back side of the bonding pads 303 in all the devices 302 on the other rows E 3 to En are formed through the lithium tantalate substrate 300 of the wafer 30 .
- the pulsed laser beam is not applied to the areas of the wafer 30 corresponding to the spacing A and the spacing B in the X direction and the spacing C and the spacing D in the Y direction shown in FIG. 6 .
- the control means 20 applies a voltage of 0 V to the deflection angle adjusting means 74 of the acoustooptic deflecting means 7 .
- an RF signal having a frequency corresponding to 0 V is applied to the acoustooptic device 71 , so that the pulsed laser beam (LB) oscillated by the pulsed laser beam oscillating means 6 is led to the laser beam absorbing means 76 as shown by the broken line in FIG. 2 , thereby avoiding the application of the pulsed laser beam to the wafer 30 .
- the plural laser processed holes are formed in the wafer including the substrate (first member), the plural devices formed on the front side of the substrate, and the plural bonding pads (second member) provided on each device, the plural laser processed holes respectively extending from the back side of the substrate (first member) to the plural bonding pads (second member).
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US20170120388A1 (en) * | 2015-10-30 | 2017-05-04 | Citic Dicastal Co., Ltd | Device and Method for Laser Cutting of Aluminum Alloy Wheel Blank Burrs |
US20170189998A1 (en) * | 2015-10-30 | 2017-07-06 | Citic Dicastal Co., Ltd | Device and Method for Degating of Aluminum Wheel Blank by Laser Cutting |
US9925756B2 (en) * | 2013-03-11 | 2018-03-27 | Samsung Display Co., Ltd. | Substrate peeling device, method for peeling substrate, and method for fabricating flexible display device |
US9969028B2 (en) | 2014-02-28 | 2018-05-15 | Toyota Jidosha Kabushiki Kaisha | Welded portion inspection method |
US10985060B2 (en) * | 2018-10-23 | 2021-04-20 | Disco Corporation | Laser processing method using plasma light detection for forming a pore in a substrate |
US20220115250A1 (en) * | 2020-10-13 | 2022-04-14 | Disco Corporation | Processing apparatus |
US20220143747A1 (en) * | 2020-11-11 | 2022-05-12 | Disco Corporation | Laser processing apparatus |
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JP6034030B2 (ja) * | 2012-03-09 | 2016-11-30 | 株式会社ディスコ | レーザー加工方法およびレーザー加工装置 |
US9919502B2 (en) | 2014-04-23 | 2018-03-20 | Schaublin Sa | Method and apparatus for preparing a surface for bonding a material thereto |
JP6464789B2 (ja) * | 2015-02-10 | 2019-02-06 | オムロン株式会社 | 検査装置及びレーザ加工装置並びにレーザ加工検査方法 |
JP6831246B2 (ja) * | 2017-01-11 | 2021-02-17 | 株式会社ディスコ | ウエーハの加工方法 |
CN109014623A (zh) * | 2018-09-13 | 2018-12-18 | 苏州新火花机床有限公司 | 一种数控超短脉冲激光微小孔加工装置 |
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- 2012-12-14 KR KR1020120146100A patent/KR101953918B1/ko active IP Right Grant
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2013
- 2013-01-08 US US13/736,198 patent/US20130193122A1/en not_active Abandoned
- 2013-01-18 CN CN201310018636.4A patent/CN103223558B/zh active Active
- 2013-01-24 DE DE102013201123.7A patent/DE102013201123B4/de active Active
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US9925756B2 (en) * | 2013-03-11 | 2018-03-27 | Samsung Display Co., Ltd. | Substrate peeling device, method for peeling substrate, and method for fabricating flexible display device |
US9969028B2 (en) | 2014-02-28 | 2018-05-15 | Toyota Jidosha Kabushiki Kaisha | Welded portion inspection method |
US20170120388A1 (en) * | 2015-10-30 | 2017-05-04 | Citic Dicastal Co., Ltd | Device and Method for Laser Cutting of Aluminum Alloy Wheel Blank Burrs |
US20170189998A1 (en) * | 2015-10-30 | 2017-07-06 | Citic Dicastal Co., Ltd | Device and Method for Degating of Aluminum Wheel Blank by Laser Cutting |
US10279432B2 (en) * | 2015-10-30 | 2019-05-07 | Citic Dicastal Co., Ltd | Device and method for laser cutting of aluminum alloy wheel blank burrs |
US10279433B2 (en) * | 2015-10-30 | 2019-05-07 | Citic Dicastal Co., Ltd | Device and method for degating of aluminum wheel blank by laser cutting |
US10985060B2 (en) * | 2018-10-23 | 2021-04-20 | Disco Corporation | Laser processing method using plasma light detection for forming a pore in a substrate |
US20220115250A1 (en) * | 2020-10-13 | 2022-04-14 | Disco Corporation | Processing apparatus |
US20220143747A1 (en) * | 2020-11-11 | 2022-05-12 | Disco Corporation | Laser processing apparatus |
US11839931B2 (en) * | 2020-11-11 | 2023-12-12 | Disco Corporation | Laser processing apparatus |
Also Published As
Publication number | Publication date |
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CN103223558B (zh) | 2016-08-03 |
JP2013154366A (ja) | 2013-08-15 |
US20160199940A1 (en) | 2016-07-14 |
DE102013201123A1 (de) | 2013-08-01 |
KR20130087360A (ko) | 2013-08-06 |
CN103223558A (zh) | 2013-07-31 |
US10207369B2 (en) | 2019-02-19 |
JP5969767B2 (ja) | 2016-08-17 |
KR101953918B1 (ko) | 2019-03-04 |
DE102013201123B4 (de) | 2024-06-13 |
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