US20090114153A1 - Method and apparatus for sealing an opening of a processing chamber - Google Patents
Method and apparatus for sealing an opening of a processing chamber Download PDFInfo
- Publication number
- US20090114153A1 US20090114153A1 US12/252,055 US25205508A US2009114153A1 US 20090114153 A1 US20090114153 A1 US 20090114153A1 US 25205508 A US25205508 A US 25205508A US 2009114153 A1 US2009114153 A1 US 2009114153A1
- Authority
- US
- United States
- Prior art keywords
- opening
- wall
- chamber
- processing chamber
- door
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45517—Confinement of gases to vicinity of substrate
Definitions
- Embodiments of the present invention generally relate to electronic device manufacturing and more particularly to methods and apparatus for improved sealing of an opening in a plasma processing chamber.
- substrates In the fabrication of flat panel displays, television or computer monitors, solar cell arrays, and the like, various dielectric, semiconductive, and conductive layers are sequentially deposited on surfaces of substrates. These substrates may be made of glass, polymers, metal, or other suitable substrate materials capable of having electronic devices formed thereon. To increase fabrication efficiency and/or lower production costs, the size of the substrates to be processed continues to increase. As a result, the size of processing chambers for forming the layers on the surface of the substrates continues to increase as well.
- a substrate processing chamber typically communicates with a substrate transfer chamber through a sealable opening that is both wide and relatively short to accommodate insertion and removal of horizontally-oriented substrates.
- a chamber isolation valve also known as a slit valve, may be positioned adjacent the processing chamber to seal such an opening.
- an isolation valve may be attached to the processing chamber such that a sealing plate, also known as a door, of the isolation valve may be extended to seal the opening, and retracted to permit passage of substrates through the opening.
- a sealing plate also known as a door
- Embodiments of the present invention generally provide an improved method and apparatus for sealing an opening of a processing chamber, which may be used in a cluster-type substrate processing system.
- an apparatus for sealing an opening in a wall of a processing chamber comprises a closure member at least partially disposed between a front plate adjacent a processing volume and a rear plate of the wall, a conductive bumper disposed between the closure member and the front plate of the wall, and a deployment mechanism configured to move the closure member both vertically and horizontally with respect to the opening.
- the closure member has an extended portion extending vertically away from the opening.
- a method for sealing an opening in a wall of a processing chamber comprises activating a deployment mechanism to move an enclosure member that is at least partially disposed between a front plate and a rear plate of the wall with respect to the opening via an extended portion of the closure member and moving the door member into contact with the front plate to seal the opening in the chamber wall.
- the closure member has a door member and a bracing member.
- a processing chamber comprises a wall having a front plate adjacent a processing volume, a rear plate, and an opening extending therethrough, a closure member configured between the front plate and the rear plate, and a deployment mechanism configured to move the closure member with respect to the opening.
- a processing chamber comprises a chamber body having a bottom and a wall with an opening extending therethrough, a closure member disposed within the chamber body, and a deployment mechanism configured to move the closure member with respect to the opening.
- the closure member has at least one electrically conductive sealing member disposed thereon.
- a method for sealing an opening in a wall of a processing chamber comprises activating a deployment mechanism to move an enclosure member that is disposed within the processing chamber with respect to the opening via an extended portion of the closure member, moving a door member of the closure member that is enclosed within the processing chamber into contact with the wall to seal the opening in the chamber wall, and establishing electrical contact between the door member and the chamber wall.
- FIG. 1 is a schematic plan view of an exemplary substrate processing system that may be adapted to benefit from the invention.
- FIG. 2A is a schematic cross-section view of a prior art processing chamber, with plasma generated therein, positioned adjacent an associated chamber isolation valve.
- FIG. 2B is a partial, enlarged view of the chamber isolation valve of FIG. 2A .
- FIG. 3A is a schematic cross-section view of a processing chamber according to one embodiment of the invention with plasma generated therein.
- FIG. 3B is a partial, enlarged view of a wall of the chamber of FIG. 3A .
- FIG. 4 is a schematic cross-section view of a processing chamber according to another embodiment of the present invention with plasma generated therein.
- FIG. 5 is a schematic cross-section view of one embodiment of a labyrinth seal according to the present invention.
- FIG. 6 is a schematic cross-section view of another embodiment of a labyrinth seal according to the present invention.
- Embodiments of the present invention generally comprise an improved method and apparatus for sealing an opening of a processing chamber, which may be used in a cluster-type substrate processing system.
- FIG. 1 is a schematic plan view of an exemplary substrate processing system 100 that may be adapted to benefit from the invention.
- the substrate processing system 100 may include a load lock 120 , a transfer chamber 130 , a transfer robot 140 , and multiple substrate processing chambers 150 .
- the load lock 120 allows the introduction of one or more substrates into the vacuum environment of the substrate processing system 100 without pressurizing the entire system to atmospheric pressure.
- the processing chambers 150 may be plasma-enhanced chemical vapor deposition (PECVD) chambers.
- PECVD plasma-enhanced chemical vapor deposition
- the substrate processing chambers 150 may be other types of processing chambers as well, such as physical vapor deposition (PVD) chambers.
- PVD physical vapor deposition
- the substrate processing chambers 150 are isolated from each other to minimize infiltration of incompatible process gases and because different processes may require significantly different levels of vacuum.
- the transfer robot 140 inside the transfer chamber 130 , transfers substrates between the substrate processing chambers 150 and the load lock 120 .
- Each chamber 150 of the substrate processing system 100 may be isolated from all other chambers by one or more chamber isolation valves 160 . These chamber isolation valves 160 are positioned between the transfer chamber 130 and the associated process chamber 150 or load lock chamber 120 .
- FIG. 2A is a schematic cross-section view of one embodiment of a processing chamber, such as the processing chamber 150 positioned adjacent the associated chamber isolation valve 160 .
- processing chamber 150 may be a plasma enhanced chemical vapor deposition (PECVD) chamber.
- PECVD plasma enhanced chemical vapor deposition
- FIG. 2B is a partial, enlarged view of the chamber isolation valve 160 .
- the chamber 150 generally includes walls 202 , a wall 203 , a bottom 204 , a showerhead 210 , and a substrate support 230 , which cumulatively define a process volume 206 .
- the process volume 206 is accessed through an opening 208 such that a substrate 102 may be transferred into and out of the chamber 150 .
- the chamber isolation valve 160 is placed adjacent the chamber 150 to allow access to the opening 208 when a substrate is being transferred and to seal the opening 208 when a substrate is not being transferred. This placement creates an elongated tunnel 209 associated with the chamber opening 208 and the chamber isolation valve 160 . In typical chamber configurations, the length of the elongated tunnel 209 may be about 20 cm or greater.
- the chamber isolation valve 160 seals the opening 208 to the adjacent processing chamber 150 so as to permit pressurization of the processing chamber 150 for processing of a substrate contained therein.
- Conventional chamber isolation valves typically are not designed to accommodate the large pressure differentials associated with the plasma-processing of large substrates, such as flat panels.
- An improved apparatus and method has been developed incorporating a moveable bracing member into the chamber isolation valve which exerts a supportive bracing force on the isolation valve door when closed.
- the method and apparatus incorporating a bracing member and bracing force into a chamber isolation valve are discussed in detail below and in U.S. Pat. No. 7,086,638 issued Aug. 8, 2006 to Kurita et al., which is incorporated by reference to the extent not inconsistent with the present disclosure.
- the chamber isolation valve 160 may include a closure member 263 for sealing the chamber opening 208 .
- the chamber isolation valve 160 may also include a valve housing 265 within which at least a portion of the closure member 263 may be movably disposed.
- the valve housing 265 of the chamber isolation valve 160 may be placed against the processing chamber 150 , such that a seal is formed between the valve housing 265 and the processing chamber 160 , at the opening 208 to be sealed.
- the closure member 263 may include a chamber isolation valve door 267 for sealing the chamber opening 208 .
- the closure member 263 may further include a bracing member 269 that is movable relative to chamber isolation valve door 267 .
- the bracing member 269 may be adapted to extend away from and retract toward the chamber isolation valve door 267 .
- the bracing member 269 may be adapted to brace or buttress the chamber isolation valve door 267 , for example, when the chamber isolation valve door 267 is in position to seal the chamber opening 208 as described above.
- the valve housing 265 may define an enclosure 273 , a first opening 275 to the enclosure 273 , and a second opening 277 to the enclosure 273 .
- the first opening 275 may be adjacent and allow access to the interior of the transfer chamber 150 .
- the second opening 277 and the enclosure 273 are aligned along a common axis with the first opening 275 and the chamber opening 208 , and are sized to permit passage of substrates through the valve housing 265 and into and out of the processing chamber 150 when the closure member 263 is in the open position.
- the first opening 275 correspondingly forms an extension of the elongated tunnel 209 .
- the valve housing 265 may further include a rear plate 279 within which the second opening 277 is formed.
- the rear plate 279 may be adapted to permit the bracing member 269 to contact the rear plate 279 and push against the rear plate 279 for bracing the chamber isolation valve door 267 of the closure member 263 during sealing.
- An elastomeric o-ring 266 may be disposed between the bracing member 269 and the rear plate 279 to provide a pressure tight seal between the bracing member 269 and the rear plate 279 .
- a conductive bumper 268 may be disposed between the bracing member 269 and the rear plate 279 as well.
- the valve housing 265 may further comprise a front plate 281 , within which the first opening 275 is formed.
- the front plate 281 may be adapted to permit the chamber isolation valve door 267 of the closure member 263 to contact the front plate 281 and seal around the first opening 275 .
- the valve door 267 may include the o-ring 266 to provide a pressure seal between the valve door 267 and the front plate 281 of the valve housing 265 .
- FIGS. 2A and 2B further show a schematic cross-sectional representation of plasma 201 generated by a processing chamber 150 positioned adjacent an isolation valve 160 .
- a radio frequency (RF) return path is established along the interior surfaces of the processing chamber 150 , which contains the plasma 201 during processing. Accordingly, an RF return path may be established through the isolation valve 160 to contain the plasma 201 at the opening 208 .
- This return path may be established between the isolation valve housing 265 and the processing chamber wall 203 via conductive contact. Additionally, the return path may be continued across the second opening 277 of the isolation valve 160 via conductive contact between the bracing member 269 and the valve housing 265 provided through the conductive bumper 268 .
- the plasma 201 may be substantially contained, problems associated with this configuration exist.
- the plasma 201 generated is not uniform about the substrate 102 .
- the plasma 201 extends a significant distance into the opening 208 . This occurs because of the significant distance that the plasma 201 may travel to reach the above referenced containment of isolation valve 160 .
- This non-uniform plasma generation results in substantial, non-uniform deposition on the substrate 102 .
- the gas flow in the process chamber 150 is inhibited at the opening 208 , due to the tendency of gas to get trapped in the elongated tunnel 209 associated with the chamber opening 208 .
- This “tunneling effect” at the chamber opening 208 also appears to lead to a non-uniform temperature distribution along the processing chamber wall 203 on which the opening 208 is located. Both of these situations also contribute to non-uniform deposition of material onto the substrate 102 .
- FIG. 3A shows one embodiment of the present invention represented by a schematic cross-section of a processing chamber 350 generating plasma 301 .
- the processing chamber 350 generally includes walls 302 , a wall 303 , a bottom 304 , a showerhead 310 , and a substrate support 330 , which cumulatively define a process volume 306 .
- the substrate support 330 may include a substrate receiving surface 332 for supporting the substrate 102 and stem 334 coupled to a lift system 336 to raise and lower the substrate support 330 .
- Lift pins 338 may be moveably disposed through the substrate support 330 to move the substrate 102 to and from the substrate receiving surface 332 .
- the substrate support 330 may also include RF return straps 331 to provide an RF path between the periphery of the substrate support 330 and the walls 302 , which shortens the RF return path to an RF power source 322 .
- RF return straps are disclosed in U.S. Pat. No. 6,024,044 issued on Feb. 15 2000 to Law et al. and U.S. patent application Ser. No. 11/613,934 filed on Dec. 20 2006 to Park et al., which are both incorporated by reference in their entirety to the extent not inconsistent with the present disclosure.
- the showerhead 310 may be coupled to a backing plate 312 at its periphery by a suspension 314 .
- the showerhead 310 may also be coupled to the backing plate 312 by one or more center supports 316 to help prevent sag and/or control the straightness/curvature of the showerhead 310 .
- a gas source 320 may be coupled to the backing plate 312 to provide gas through the backing plate 312 and through the showerhead 310 to the substrate receiving surface 332 .
- a vacuum pump 309 may be coupled to the chamber 350 to control the process volume 306 at a desired pressure.
- RF power source 322 may be coupled to the backing plate 312 and/or to the showerhead 310 to provide an RF power to the showerhead 310 so that an electric field is created between the showerhead and the substrate support so that plasma may be generated from the gases between the showerhead 310 and the substrate support 330 .
- Various RF frequencies may be used, such as a frequency between about 0.3 MHz and about 200 MHz.
- the RF power source is provided at a frequency of 13.56 MHz.
- Examples of showerheads are disclosed in U.S. Pat. No. 6,477,980 issued on Nov. 12, 2002 to White et al., U.S. Publication 2005/0251990 published on Nov. 17, 2006 to Choi et al., and U.S. Publication 2006/0060138 published on Mar. 23, 2006 to Keller et al., which are all incorporated by reference in their entirety to the extent not inconsistent with the present disclosure.
- a remote plasma source 324 such as an inductively coupled remote plasma source, may also be coupled between the gas source 320 and the backing plate 312 . Between processing substrates, a cleaning gas may be provided to the remote plasma source 324 so that remote plasma is generated and provided to clean chamber components. The cleaning gas may be further excited by the RF power source 322 provided to the showerhead. Suitable cleaning gases include, but are not limited to NF 3 , F 2 , and SF 6 . Examples of remote plasma sources are disclosed in U.S. Pat. No. 5,788,778 issued Aug. 4, 1998 to Shang et al., which is incorporated by reference to the extent not inconsistent with the present disclosure.
- the process volume 306 is accessed through an opening 308 in the chamber wall 303 such that the substrate 102 may be transferred into and out of the chamber 350 .
- the chamber wall 303 may be configured to integrally allow access to the opening 308 when a substrate is being transferred and to seal the opening 308 when a substrate is not being transferred.
- FIG. 3B is a partial, enlarged view of the chamber wall 303 according to one embodiment of the present invention.
- the chamber wall 303 may comprise a front plate 381 and a rear plate 379 between which at least a portion of a closure member 363 may be movably disposed for sealing the chamber opening 308 .
- the closure member 363 may include a door 367 for sealing the chamber opening 308 .
- the door 367 may include a resilient member 366 for maintaining a pressure tight seal at the chamber opening 308 .
- the resilient member 366 may comprise an elastomeric material, such as a silicone-based elastomer.
- the door 367 may include a conductive bumper 368 , which may be comprised of electrically conductive elastomeric materials such as a metal impregnated silicone-based elastomer.
- the conductive bumper 368 may be a metal bumper comprising aluminum plated stainless steel, high nickel alloy steel, chromium-nickel alloy steel, or the like.
- the front plate 381 may include the resilient member 366 and/or the conductive bumper 368 .
- the closure member 363 may further include a bracing member 369 that is movable relative to the door 367 .
- the bracing member 369 may be adapted to extend away from and retract toward the door 367 .
- the bracing member 369 may be adapted to brace or buttress the door 367 , for example, when the door 367 is in position to seal the chamber opening 308 .
- the bracing member 369 may include the resilient member 366 for maintaining a pressure tight seal.
- the bracing member 369 may include the conductive member 368 as well.
- the rear plate 379 may include the resilient member 366 and/or the conductive member 368 .
- the closure member 363 may also include an extended portion 371 that is spaced away from the door 367 .
- an end of the extended portion 371 that is spaced away from the door 367 may be manipulated by a deployment mechanism 372 disposed inside or outside of the chamber wall 303 .
- the deployment mechanism 372 may be a combination of pneumatically-driven linear actuators
- the deployment mechanism 372 may move the closure member 363 as a unit, i.e., by moving both the chamber isolation valve door 367 and the bracing member 369 together via the extended portion 371 .
- the deployment mechanism 372 may move the closure member 363 horizontally via extended portion 371 toward and/or away from the chamber opening 308 .
- the deployment mechanism 372 may move the closure member 363 vertically via extended portion 371 .
- the processing chamber wall 303 may define an enclosure 373 .
- the chamber opening 308 contained in the front plate 381 allows access between the processing volume 306 and the enclosure 373 .
- a second chamber opening 377 allows access between the enclosure 373 and a transfer chamber, such as the transfer chamber 130 in FIG. 1 .
- the second chamber opening 377 and the enclosure 373 are aligned along a common axis with the chamber opening 308 , and are sized to permit passage of substrates through the chamber wall 303 and into and out of the processing chamber 350 when the closure member 363 is in the open position.
- the rear plate 379 may be adapted to permit the bracing member 369 to contact the rear plate 379 and push against the rear plate 379 for bracing the valve door 367 of the closure member 363 during sealing.
- the front plate 381 may be adapted to permit the door 367 of the closure member 363 to contact the front plate 381 and seal around the chamber opening 308 .
- an actuator 370 may be employed within the bracing member 369 and/or the door member 367 .
- the actuator 370 may be a pneumatic actuator having a pressure cell that may be expanded via an external source of pressurized gas to force the bracing member 369 against the rear plate 379 .
- the chamber bottom 304 , walls 302 , and wall 303 provide an RF return path, which contains the plasma 301 . Additionally, the RF return path may be continued across the chamber opening 308 of the chamber wall 303 via conductive contact between the door member 367 and the front plate 381 provided by the conductive bumper 368 . This configuration may result in a significantly shorter RF return path for containing plasma 301 at the chamber opening 308 than the configuration in prior embodiments, such as that shown in FIG. 2 for containing plasma 201 about the corresponding chamber opening 208 .
- the distance between the interior chamber surface of front plate 381 and the door member 367 is about 10 cm or less.
- FIG. 4 depicts another embodiment of the present invention represented by a schematic cross-section of a processing chamber 450 generating plasma 401 .
- the processing chamber 450 includes walls 402 , a wall 403 , a bottom 404 , a showerhead 410 , and a substrate support 430 , which cumulatively define a process volume 406 .
- the process volume 406 is accessed through an opening 408 in the chamber wall 403 such that the substrate 102 may be transferred into and out of the chamber 450 .
- a closure member 463 is configured to allow access to the opening 408 when a substrate is being transferred and to seal the opening 408 from the interior of the chamber 450 when a substrate is being processed.
- the closure member 463 includes a door 467 and an extended portion 471 that is spaced away from the door 467 .
- an end of the extended portion 471 that is spaced away from the door 467 may be manipulated by a deployment mechanism 472 disposed below the chamber bottom 404 .
- the deployment mechanism 472 may move the closure member 463 vertically via the extended portion 471 .
- the door 467 includes an upper surface with a tongue member 482 , a first recessed portion 484 and a second recessed portion 486 .
- the first recessed portion 484 and the second recessed portion 486 may each further comprise a resilient member 468 disposed thereon for maintaining a vacuum seal at the chamber opening 408 .
- the resilient member 468 may be comprised of electrically conductive elastomeric materials such as a metal impregnated silicone-based elastomer.
- the resilient member 468 may be a bumper comprising aluminum plated stainless steel, high nickel alloy steel, chromium-nickel alloy steel, or the like.
- the wall 403 includes an upper portion 451 disposed above the opening 408 and a lower portion 456 disposed below the opening 408 .
- the upper portion 451 may include a groove 452 disposed therein.
- the lower portion 456 may include a lip 457 .
- the tongue member 482 is inserted into the groove 452 when the door 467 is in the closed position for sealing the opening 408 .
- the resilient member 468 disposed on the first recessed portion 484 of the door 467 may contact the upper portion 451
- the resilient member 468 disposed on the second recessed portion 486 of the door 467 may contact the lip 457 of the lower portion 456 of the wall 403 when the door 467 is in its closed position for sealing the opening 408 .
- Such a configuration establishes a labyrinth seal of the door 467 to the wall 403 . That is, the “tongue and groove” arrangement of the upper surface of the door 467 to the upper portion 451 of the wall 403 results in a long and difficult path for any excited gas to travel to reach the sealed surfaces about the opening 408 . This prevents the electrical contact area between the door 467 and the wall 403 from becoming coated with extraneous deposits that may be dislodged when the door 467 is moved to its open position allowing access through the opening 408 .
- the groove 452 may be formed by attaching a separate member 500 , 600 to the wall 403 as shown in FIGS. 5 and 6 .
- a recess 510 is formed in a lower surface of the member 500 , which is then attached to the inner surface of the wall 403 .
- a recess 490 is formed in the inner surface of the wall 403 and the member 600 is attached thereto.
- the chamber bottom 404 , the walls 402 , and the wall 403 establish an RF return path for containing the plasma 401 .
- the RF return path may be continued across the chamber opening 408 of the chamber wall 403 via conductive contact between the door 467 and the wall 403 on the interior of the chamber 450 .
- the interior face 459 of the door 467 is substantially flush with the interior side of the wall 403 .
- embodiments of the present invention solve the problems associated with previous processing chamber configurations by shortening the RF return path by eliminating the elongated tunnel associated with the opening 208 , 308 , 408 .
- the plasma 301 , 401 generated by the embodiments of the present invention is substantially uniform about the substrate 102 . This substantially uniform plasma generation results in substantially uniform deposition on the substrate 102 .
- the gas flow in the process chamber 350 , 450 is substantially improved due to the elimination of the elongated tunnel at opening 308 , 408 .
- the temperature distribution along chamber wall 303 , 403 is substantially uniform as compared to prior embodiments. Both of these situations contribute to substantially uniform deposition onto the substrate 102 .
- the present embodiment also reduces production of residual process film at the opening 308 , 408 . In turn, this reduction substantially reduces the amount of material deposited at the opening 308 , 408 as well as the potential for contamination of the substrate 102 during transfer.
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Plasma Technology (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
A method and apparatus for sealing an opening of a processing chamber are provided. In one embodiment, the invention generally provides a closure member integrated within a wall of a process chamber for sealing an opening within the wall of the chamber. In another embodiment, the invention provides a closure member configured to seal an opening in the wall of a processing chamber from the inside of the chamber.
Description
- This application claims the benefit of the U.S. Provisional Patent Application Ser. No. 60/984,478 [Attorney Docket No. APPM 12279L], filed on Nov. 1, 2007, which is herein incorporated by reference.
- 1. Field of the Invention
- Embodiments of the present invention generally relate to electronic device manufacturing and more particularly to methods and apparatus for improved sealing of an opening in a plasma processing chamber.
- 2. Description of the Related Art
- In the fabrication of flat panel displays, television or computer monitors, solar cell arrays, and the like, various dielectric, semiconductive, and conductive layers are sequentially deposited on surfaces of substrates. These substrates may be made of glass, polymers, metal, or other suitable substrate materials capable of having electronic devices formed thereon. To increase fabrication efficiency and/or lower production costs, the size of the substrates to be processed continues to increase. As a result, the size of processing chambers for forming the layers on the surface of the substrates continues to increase as well.
- A substrate processing chamber typically communicates with a substrate transfer chamber through a sealable opening that is both wide and relatively short to accommodate insertion and removal of horizontally-oriented substrates. A chamber isolation valve, also known as a slit valve, may be positioned adjacent the processing chamber to seal such an opening.
- For example, an isolation valve may be attached to the processing chamber such that a sealing plate, also known as a door, of the isolation valve may be extended to seal the opening, and retracted to permit passage of substrates through the opening.
- Unfortunately, as the size of the substrates, and corresponding size of the needed opening in the process chamber, continues to grow, so do problems associated with current sealing systems associated with plasma uniformity, gas flow, particle contamination, and temperature uniformity. Accordingly, a need exists for improved methods and apparatus for sealing the opening of a process chamber.
- Embodiments of the present invention generally provide an improved method and apparatus for sealing an opening of a processing chamber, which may be used in a cluster-type substrate processing system.
- In one embodiment of the present invention, an apparatus for sealing an opening in a wall of a processing chamber comprises a closure member at least partially disposed between a front plate adjacent a processing volume and a rear plate of the wall, a conductive bumper disposed between the closure member and the front plate of the wall, and a deployment mechanism configured to move the closure member both vertically and horizontally with respect to the opening. In one embodiment, the closure member has an extended portion extending vertically away from the opening.
- In another embodiment, a method for sealing an opening in a wall of a processing chamber comprises activating a deployment mechanism to move an enclosure member that is at least partially disposed between a front plate and a rear plate of the wall with respect to the opening via an extended portion of the closure member and moving the door member into contact with the front plate to seal the opening in the chamber wall. In one embodiment, the closure member has a door member and a bracing member.
- In another embodiment, a processing chamber comprises a wall having a front plate adjacent a processing volume, a rear plate, and an opening extending therethrough, a closure member configured between the front plate and the rear plate, and a deployment mechanism configured to move the closure member with respect to the opening.
- In another embodiment of the present invention, a processing chamber comprises a chamber body having a bottom and a wall with an opening extending therethrough, a closure member disposed within the chamber body, and a deployment mechanism configured to move the closure member with respect to the opening. In one embodiment, the closure member has at least one electrically conductive sealing member disposed thereon.
- In yet another embodiment of the present invention, a method for sealing an opening in a wall of a processing chamber comprises activating a deployment mechanism to move an enclosure member that is disposed within the processing chamber with respect to the opening via an extended portion of the closure member, moving a door member of the closure member that is enclosed within the processing chamber into contact with the wall to seal the opening in the chamber wall, and establishing electrical contact between the door member and the chamber wall.
- So that the manner in which the above recited features of the present invention can be understood in detail, a more particular description of the invention, briefly summarized above, may be had by reference to embodiments, some of which are illustrated in the appended drawings. It is to be noted, however, that the appended drawings illustrate only typical embodiments of this invention and are therefore not to be considered limiting of its scope, for the invention may admit to other equally effective embodiments.
-
FIG. 1 is a schematic plan view of an exemplary substrate processing system that may be adapted to benefit from the invention. -
FIG. 2A is a schematic cross-section view of a prior art processing chamber, with plasma generated therein, positioned adjacent an associated chamber isolation valve. -
FIG. 2B is a partial, enlarged view of the chamber isolation valve ofFIG. 2A . -
FIG. 3A is a schematic cross-section view of a processing chamber according to one embodiment of the invention with plasma generated therein. -
FIG. 3B is a partial, enlarged view of a wall of the chamber ofFIG. 3A . -
FIG. 4 is a schematic cross-section view of a processing chamber according to another embodiment of the present invention with plasma generated therein. -
FIG. 5 is a schematic cross-section view of one embodiment of a labyrinth seal according to the present invention. -
FIG. 6 is a schematic cross-section view of another embodiment of a labyrinth seal according to the present invention. - Embodiments of the present invention generally comprise an improved method and apparatus for sealing an opening of a processing chamber, which may be used in a cluster-type substrate processing system.
-
FIG. 1 is a schematic plan view of an exemplarysubstrate processing system 100 that may be adapted to benefit from the invention. Thesubstrate processing system 100 may include aload lock 120, atransfer chamber 130, atransfer robot 140, and multiplesubstrate processing chambers 150. - The
load lock 120 allows the introduction of one or more substrates into the vacuum environment of thesubstrate processing system 100 without pressurizing the entire system to atmospheric pressure. - Substrates are processed in the
processing chambers 150. Theprocessing chambers 150 may be plasma-enhanced chemical vapor deposition (PECVD) chambers. Thesubstrate processing chambers 150 may be other types of processing chambers as well, such as physical vapor deposition (PVD) chambers. Typically, thesubstrate processing chambers 150 are isolated from each other to minimize infiltration of incompatible process gases and because different processes may require significantly different levels of vacuum. - The
transfer robot 140, inside thetransfer chamber 130, transfers substrates between thesubstrate processing chambers 150 and theload lock 120. Eachchamber 150 of thesubstrate processing system 100 may be isolated from all other chambers by one or morechamber isolation valves 160. Thesechamber isolation valves 160 are positioned between thetransfer chamber 130 and theassociated process chamber 150 orload lock chamber 120. -
FIG. 2A is a schematic cross-section view of one embodiment of a processing chamber, such as theprocessing chamber 150 positioned adjacent the associatedchamber isolation valve 160. For example,processing chamber 150 may be a plasma enhanced chemical vapor deposition (PECVD) chamber. One suitable plasma enhanced chemical vapor deposition chamber is available from Applied Materials, Inc., located in Santa Clara, Calif.FIG. 2B is a partial, enlarged view of thechamber isolation valve 160. - The
chamber 150 generally includeswalls 202, awall 203, abottom 204, ashowerhead 210, and asubstrate support 230, which cumulatively define aprocess volume 206. Theprocess volume 206 is accessed through anopening 208 such that asubstrate 102 may be transferred into and out of thechamber 150. Thechamber isolation valve 160 is placed adjacent thechamber 150 to allow access to theopening 208 when a substrate is being transferred and to seal theopening 208 when a substrate is not being transferred. This placement creates an elongated tunnel 209 associated with thechamber opening 208 and thechamber isolation valve 160. In typical chamber configurations, the length of the elongated tunnel 209 may be about 20 cm or greater. - The
chamber isolation valve 160 seals theopening 208 to theadjacent processing chamber 150 so as to permit pressurization of theprocessing chamber 150 for processing of a substrate contained therein. Conventional chamber isolation valves typically are not designed to accommodate the large pressure differentials associated with the plasma-processing of large substrates, such as flat panels. An improved apparatus and method has been developed incorporating a moveable bracing member into the chamber isolation valve which exerts a supportive bracing force on the isolation valve door when closed. The method and apparatus incorporating a bracing member and bracing force into a chamber isolation valve are discussed in detail below and in U.S. Pat. No. 7,086,638 issued Aug. 8, 2006 to Kurita et al., which is incorporated by reference to the extent not inconsistent with the present disclosure. - Referring to
FIGS. 2A and 2B , thechamber isolation valve 160 may include aclosure member 263 for sealing thechamber opening 208. Thechamber isolation valve 160 may also include avalve housing 265 within which at least a portion of theclosure member 263 may be movably disposed. To permit thechamber isolation valve 160 to be used in conjunction with theopening 208 of theprocessing chamber 150, thevalve housing 265 of thechamber isolation valve 160 may be placed against theprocessing chamber 150, such that a seal is formed between thevalve housing 265 and theprocessing chamber 160, at theopening 208 to be sealed. - The
closure member 263 may include a chamberisolation valve door 267 for sealing thechamber opening 208. Theclosure member 263 may further include a bracingmember 269 that is movable relative to chamberisolation valve door 267. For example, the bracingmember 269 may be adapted to extend away from and retract toward the chamberisolation valve door 267. Further, the bracingmember 269 may be adapted to brace or buttress the chamberisolation valve door 267, for example, when the chamberisolation valve door 267 is in position to seal the chamber opening 208 as described above. - The
valve housing 265 may define anenclosure 273, afirst opening 275 to theenclosure 273, and a second opening 277 to theenclosure 273. Thefirst opening 275 may be adjacent and allow access to the interior of thetransfer chamber 150. As shown inFIG. 2 , the second opening 277 and theenclosure 273 are aligned along a common axis with thefirst opening 275 and thechamber opening 208, and are sized to permit passage of substrates through thevalve housing 265 and into and out of theprocessing chamber 150 when theclosure member 263 is in the open position. Thefirst opening 275 correspondingly forms an extension of the elongated tunnel 209. - In embodiments of the
chamber isolation valve 160 intended for sealing a processing chamber in the presence of a large pressure differential, thevalve housing 265 may further include arear plate 279 within which the second opening 277 is formed. Therear plate 279 may be adapted to permit the bracingmember 269 to contact therear plate 279 and push against therear plate 279 for bracing the chamberisolation valve door 267 of theclosure member 263 during sealing. An elastomeric o-ring 266 may be disposed between the bracingmember 269 and therear plate 279 to provide a pressure tight seal between the bracingmember 269 and therear plate 279. In addition, aconductive bumper 268 may be disposed between the bracingmember 269 and therear plate 279 as well. Thevalve housing 265 may further comprise afront plate 281, within which thefirst opening 275 is formed. Thefront plate 281 may be adapted to permit the chamberisolation valve door 267 of theclosure member 263 to contact thefront plate 281 and seal around thefirst opening 275. Thevalve door 267 may include the o-ring 266 to provide a pressure seal between thevalve door 267 and thefront plate 281 of thevalve housing 265. -
FIGS. 2A and 2B further show a schematic cross-sectional representation ofplasma 201 generated by aprocessing chamber 150 positioned adjacent anisolation valve 160. A radio frequency (RF) return path is established along the interior surfaces of theprocessing chamber 150, which contains theplasma 201 during processing. Accordingly, an RF return path may be established through theisolation valve 160 to contain theplasma 201 at theopening 208. This return path may be established between theisolation valve housing 265 and theprocessing chamber wall 203 via conductive contact. Additionally, the return path may be continued across the second opening 277 of theisolation valve 160 via conductive contact between the bracingmember 269 and thevalve housing 265 provided through theconductive bumper 268. - However, although the
plasma 201 may be substantially contained, problems associated with this configuration exist. First, as shown inFIG. 2 , theplasma 201 generated is not uniform about thesubstrate 102. In fact, because of the length of elongated tunnel 209 created at theopening 208, theplasma 201 extends a significant distance into theopening 208. This occurs because of the significant distance that theplasma 201 may travel to reach the above referenced containment ofisolation valve 160. This non-uniform plasma generation results in substantial, non-uniform deposition on thesubstrate 102. - Additionally, the gas flow in the
process chamber 150 is inhibited at theopening 208, due to the tendency of gas to get trapped in the elongated tunnel 209 associated with thechamber opening 208. This “tunneling effect” at the chamber opening 208 also appears to lead to a non-uniform temperature distribution along theprocessing chamber wall 203 on which theopening 208 is located. Both of these situations also contribute to non-uniform deposition of material onto thesubstrate 102. - Another problem associated with the previous configuration is the production of residual process film in the elongated tunnel 209 at the
chamber opening 208. This excess of residual process film in the elongated tunnel 209 leads to excess material deposition on the chamber surfaces in the tunnel 209. Correspondingly, these deposits may flake off onto thesubstrate 102 during transfer, resulting in contamination of thesubstrate 102. - In contrast, embodiments of the present invention significantly improve on the aforementioned configuration by shortening the distance to the RF return path of the
isolation valve 160 through the elimination of the elongated tunnel 209 atopening 208.FIG. 3A shows one embodiment of the present invention represented by a schematic cross-section of aprocessing chamber 350 generatingplasma 301. - Similar to the previously described
chamber 150, theprocessing chamber 350 generally includeswalls 302, awall 303, a bottom 304, ashowerhead 310, and asubstrate support 330, which cumulatively define aprocess volume 306. Thesubstrate support 330 may include asubstrate receiving surface 332 for supporting thesubstrate 102 and stem 334 coupled to alift system 336 to raise and lower thesubstrate support 330. Lift pins 338 may be moveably disposed through thesubstrate support 330 to move thesubstrate 102 to and from thesubstrate receiving surface 332. Thesubstrate support 330 may also include RF return straps 331 to provide an RF path between the periphery of thesubstrate support 330 and thewalls 302, which shortens the RF return path to anRF power source 322. Examples of RF return straps are disclosed in U.S. Pat. No. 6,024,044 issued on Feb. 15 2000 to Law et al. and U.S. patent application Ser. No. 11/613,934 filed on Dec. 20 2006 to Park et al., which are both incorporated by reference in their entirety to the extent not inconsistent with the present disclosure. - The
showerhead 310 may be coupled to abacking plate 312 at its periphery by asuspension 314. Theshowerhead 310 may also be coupled to thebacking plate 312 by one or more center supports 316 to help prevent sag and/or control the straightness/curvature of theshowerhead 310. Agas source 320 may be coupled to thebacking plate 312 to provide gas through thebacking plate 312 and through theshowerhead 310 to thesubstrate receiving surface 332. Avacuum pump 309 may be coupled to thechamber 350 to control theprocess volume 306 at a desired pressure. ThenRF power source 322 may be coupled to thebacking plate 312 and/or to theshowerhead 310 to provide an RF power to theshowerhead 310 so that an electric field is created between the showerhead and the substrate support so that plasma may be generated from the gases between theshowerhead 310 and thesubstrate support 330. Various RF frequencies may be used, such as a frequency between about 0.3 MHz and about 200 MHz. In one embodiment the RF power source is provided at a frequency of 13.56 MHz. Examples of showerheads are disclosed in U.S. Pat. No. 6,477,980 issued on Nov. 12, 2002 to White et al., U.S. Publication 2005/0251990 published on Nov. 17, 2006 to Choi et al., and U.S. Publication 2006/0060138 published on Mar. 23, 2006 to Keller et al., which are all incorporated by reference in their entirety to the extent not inconsistent with the present disclosure. - A
remote plasma source 324, such as an inductively coupled remote plasma source, may also be coupled between thegas source 320 and thebacking plate 312. Between processing substrates, a cleaning gas may be provided to theremote plasma source 324 so that remote plasma is generated and provided to clean chamber components. The cleaning gas may be further excited by theRF power source 322 provided to the showerhead. Suitable cleaning gases include, but are not limited to NF3, F2, and SF6. Examples of remote plasma sources are disclosed in U.S. Pat. No. 5,788,778 issued Aug. 4, 1998 to Shang et al., which is incorporated by reference to the extent not inconsistent with the present disclosure. - Similar to the embodiment shown in
FIG. 2A , theprocess volume 306 is accessed through anopening 308 in thechamber wall 303 such that thesubstrate 102 may be transferred into and out of thechamber 350. However, contrary to prior configurations, thechamber wall 303 may be configured to integrally allow access to theopening 308 when a substrate is being transferred and to seal theopening 308 when a substrate is not being transferred. -
FIG. 3B is a partial, enlarged view of thechamber wall 303 according to one embodiment of the present invention. Referring toFIGS. 3A and 3B , thechamber wall 303 may comprise afront plate 381 and arear plate 379 between which at least a portion of aclosure member 363 may be movably disposed for sealing thechamber opening 308. Theclosure member 363 may include adoor 367 for sealing thechamber opening 308. Thedoor 367 may include aresilient member 366 for maintaining a pressure tight seal at thechamber opening 308. Theresilient member 366 may comprise an elastomeric material, such as a silicone-based elastomer. Additionally, thedoor 367 may include aconductive bumper 368, which may be comprised of electrically conductive elastomeric materials such as a metal impregnated silicone-based elastomer. Alternatively, theconductive bumper 368 may be a metal bumper comprising aluminum plated stainless steel, high nickel alloy steel, chromium-nickel alloy steel, or the like. Alternatively, thefront plate 381 may include theresilient member 366 and/or theconductive bumper 368. - The
closure member 363 may further include a bracingmember 369 that is movable relative to thedoor 367. For example, the bracingmember 369 may be adapted to extend away from and retract toward thedoor 367. Further, the bracingmember 369 may be adapted to brace or buttress thedoor 367, for example, when thedoor 367 is in position to seal thechamber opening 308. Additionally, the bracingmember 369 may include theresilient member 366 for maintaining a pressure tight seal. Moreover, the bracingmember 369 may include theconductive member 368 as well. Alternatively, therear plate 379 may include theresilient member 366 and/or theconductive member 368. - To provide for movement of the
closure member 363 relative to thechamber opening 308, theclosure member 363 may also include anextended portion 371 that is spaced away from thedoor 367. In such an embodiment, an end of theextended portion 371 that is spaced away from thedoor 367 may be manipulated by adeployment mechanism 372 disposed inside or outside of thechamber wall 303. Thedeployment mechanism 372 may be a combination of pneumatically-driven linear actuators Thedeployment mechanism 372 may move theclosure member 363 as a unit, i.e., by moving both the chamberisolation valve door 367 and the bracingmember 369 together via theextended portion 371. For example, thedeployment mechanism 372 may move theclosure member 363 horizontally viaextended portion 371 toward and/or away from thechamber opening 308. Additionally, thedeployment mechanism 372 may move theclosure member 363 vertically viaextended portion 371. - The
processing chamber wall 303 may define anenclosure 373. Thechamber opening 308 contained in thefront plate 381 allows access between theprocessing volume 306 and theenclosure 373. A second chamber opening 377 allows access between theenclosure 373 and a transfer chamber, such as thetransfer chamber 130 inFIG. 1 . As shown inFIG. 3 , the second chamber opening 377 and theenclosure 373 are aligned along a common axis with thechamber opening 308, and are sized to permit passage of substrates through thechamber wall 303 and into and out of theprocessing chamber 350 when theclosure member 363 is in the open position. - In embodiments of the
chamber wall 303 intended for sealing a processing chamber in the presence of a large pressure differential, therear plate 379 may be adapted to permit the bracingmember 369 to contact therear plate 379 and push against therear plate 379 for bracing thevalve door 367 of theclosure member 363 during sealing. Thefront plate 381 may be adapted to permit thedoor 367 of theclosure member 363 to contact thefront plate 381 and seal around thechamber opening 308. - To provide for movement of the bracing
member 369 relative to thedoor member 367, anactuator 370 may be employed within the bracingmember 369 and/or thedoor member 367. Theactuator 370 may be a pneumatic actuator having a pressure cell that may be expanded via an external source of pressurized gas to force the bracingmember 369 against therear plate 379. - The
chamber bottom 304,walls 302, andwall 303 provide an RF return path, which contains theplasma 301. Additionally, the RF return path may be continued across the chamber opening 308 of thechamber wall 303 via conductive contact between thedoor member 367 and thefront plate 381 provided by theconductive bumper 368. This configuration may result in a significantly shorter RF return path for containingplasma 301 at the chamber opening 308 than the configuration in prior embodiments, such as that shown inFIG. 2 for containingplasma 201 about thecorresponding chamber opening 208. Preferably, the distance between the interior chamber surface offront plate 381 and thedoor member 367 is about 10 cm or less. -
FIG. 4 depicts another embodiment of the present invention represented by a schematic cross-section of aprocessing chamber 450 generatingplasma 401. Similar to the previously described chambers, theprocessing chamber 450 includeswalls 402, awall 403, a bottom 404, ashowerhead 410, and asubstrate support 430, which cumulatively define aprocess volume 406. Also, similar to the previous embodiment, theprocess volume 406 is accessed through anopening 408 in thechamber wall 403 such that thesubstrate 102 may be transferred into and out of thechamber 450. However, contrary to prior configurations, aclosure member 463 is configured to allow access to theopening 408 when a substrate is being transferred and to seal theopening 408 from the interior of thechamber 450 when a substrate is being processed. - In one embodiment, the
closure member 463 includes adoor 467 and anextended portion 471 that is spaced away from thedoor 467. In such an embodiment, an end of theextended portion 471 that is spaced away from thedoor 467 may be manipulated by adeployment mechanism 472 disposed below thechamber bottom 404. Thedeployment mechanism 472 may move theclosure member 463 vertically via theextended portion 471. - In one embodiment, the
door 467 includes an upper surface with atongue member 482, a first recessedportion 484 and a second recessedportion 486. The first recessedportion 484 and the second recessedportion 486 may each further comprise aresilient member 468 disposed thereon for maintaining a vacuum seal at thechamber opening 408. Theresilient member 468 may be comprised of electrically conductive elastomeric materials such as a metal impregnated silicone-based elastomer. Alternatively, theresilient member 468 may be a bumper comprising aluminum plated stainless steel, high nickel alloy steel, chromium-nickel alloy steel, or the like. - In one embodiment, the
wall 403 includes anupper portion 451 disposed above theopening 408 and alower portion 456 disposed below theopening 408. Theupper portion 451 may include agroove 452 disposed therein. Thelower portion 456 may include a lip 457. - In one embodiment, the
tongue member 482 is inserted into thegroove 452 when thedoor 467 is in the closed position for sealing theopening 408. Additionally, theresilient member 468 disposed on the first recessedportion 484 of thedoor 467 may contact theupper portion 451, and theresilient member 468 disposed on the second recessedportion 486 of thedoor 467 may contact the lip 457 of thelower portion 456 of thewall 403 when thedoor 467 is in its closed position for sealing theopening 408. - Such a configuration establishes a labyrinth seal of the
door 467 to thewall 403. That is, the “tongue and groove” arrangement of the upper surface of thedoor 467 to theupper portion 451 of thewall 403 results in a long and difficult path for any excited gas to travel to reach the sealed surfaces about theopening 408. This prevents the electrical contact area between thedoor 467 and thewall 403 from becoming coated with extraneous deposits that may be dislodged when thedoor 467 is moved to its open position allowing access through theopening 408. - The above-reference labyrinth seal may be established with a variety of configurations of which are applicable to the present invention. For instance, the
groove 452 may be formed by attaching aseparate member wall 403 as shown inFIGS. 5 and 6 . InFIG. 5 , arecess 510 is formed in a lower surface of themember 500, which is then attached to the inner surface of thewall 403. InFIG. 6 , arecess 490 is formed in the inner surface of thewall 403 and themember 600 is attached thereto. - In the embodiment depicted in
FIG. 4 , thechamber bottom 404, thewalls 402, and thewall 403 establish an RF return path for containing theplasma 401. Additionally, the RF return path may be continued across the chamber opening 408 of thechamber wall 403 via conductive contact between thedoor 467 and thewall 403 on the interior of thechamber 450. This results in a significantly shorter RF return path for containing theplasma 401 at the chamber opening 408 than the configuration in prior embodiments, such as that shown inFIG. 2 for containingplasma 201 about thecorresponding chamber opening 208. Preferably, theinterior face 459 of thedoor 467 is substantially flush with the interior side of thewall 403. - As previously stated, embodiments of the present invention solve the problems associated with previous processing chamber configurations by shortening the RF return path by eliminating the elongated tunnel associated with the
opening FIG. 3 and 4 , theplasma substrate 102. This substantially uniform plasma generation results in substantially uniform deposition on thesubstrate 102. - Correspondingly, the gas flow in the
process chamber chamber wall substrate 102. - The present embodiment also reduces production of residual process film at the
opening opening substrate 102 during transfer. - It should be understood that while the foregoing embodiments depict a sliding-type closure member, a flap-type closure member that incorporates the necessary modifications associated with flap-type isolation valves may be equally applicable within certain embodiments of the present invention.
- While the foregoing is directed to embodiments of the present invention, other and further embodiments of the invention may be devised without departing from the basic scope thereof, and the scope thereof is determined by the claims that follow.
Claims (25)
1. An apparatus for sealing an opening in a wall of a processing chamber, comprising:
a closure member at least partially disposed between a front plate adjacent a processing volume and a rear plate of the wall, wherein the closure member has an extended portion extending vertically away from the opening;
a conductive bumper disposed between the closure member and the front plate of the wall; and
a deployment mechanism configured to move the closure member both vertically and horizontally with respect to the opening.
2. The apparatus of claim 1 , wherein the closure member comprises a door member adapted to contact the front plate and seal the opening.
3. The apparatus of claim 2 , wherein the door member comprises resilient member.
4. The apparatus of claim 3 , wherein the closure member further comprises a bracing member moveable relative to the door member and adapted to contact the rear plate.
5. The apparatus of claim 4 , further comprising an actuator adapted to move the bracing member away from the door member and into contact with the rear plate so as to brace the door member against the front plate.
6. A method for sealing an opening in a wall of a processing chamber, comprising:
activating a deployment mechanism to move an enclosure member with respect to the opening via an extended portion of the closure member, wherein the closure member is disposed between a front plate and a rear plate of the wall, and wherein the closure member has a door member and a bracing member;
moving the door member into contact with the front plate to seal the opening in the chamber wall.
7. The method of claim 6 , further comprising establishing electrical contact between the door member and the front plate of the chamber wall.
8. The method of claim 7 , wherein the door member includes an electrically conductive resilient member for sealing the opening.
9. The method of claim 8 , further comprising moving the bracing member with respect to the door member via an actuator.
10. The method of claim 9 , further comprising activating the actuator to move the bracing member into contact with the rear plate of the chamber wall so as to brace the door member against the front wall.
11. A processing chamber, comprising:
a wall having a front plate adjacent a processing volume, a rear plate, and an opening extending therethrough;
a closure member configured between the front plate and the rear plate; and
a deployment mechanism configured to move the closure member with respect to the opening.
12. The processing chamber of claim 11 , wherein the closure member comprises a door member configured to contact the front plate to seal the opening and a bracing member moveable with respect to the door member configured to contact the rear plate.
13. The processing chamber of claim 12 , further comprising an actuator configured to move the bracing member away from the door member and into contact with the rear plate so as to brace the door member against the front plate.
14. The processing chamber of claim 13 , further comprising a conductive bumper to establish electrical contact between the door member and the front plate.
15. A processing chamber, comprising:
a chamber body having a bottom and a wall with an opening extending therethrough;
a closure member disposed within the chamber body, wherein the closure member has at least one electrically conductive sealing member disposed thereon; and
a deployment mechanism configured to move the closure member with respect to the opening.
16. The processing chamber of claim 15 , wherein the wall comprises an upper portion with a groove disposed in a lower surface thereof and a lower portion with a lip extending therefrom.
17. The processing chamber of claim 16 , wherein the closure member has a tongue member extending from an upper surface thereof and a recess with an electrically conductive resilient member disposed thereon.
18. The processing chamber of claim 17 , wherein the electrically conductive resilient member is a conductive elastomer.
19. The processing chamber of claim 17 , wherein the electrically conductive resilient member comprises a material selected from the group consisting of aluminum plated stainless steel, high nickel alloy steel, and chromium-nickel alloy steel.
20. The processing chamber of claim 17 , wherein the wall comprises a wall member attached to the floor and a plate member fastened to the wall member above the opening.
21. The processing chamber of claim 20 , wherein a recess is formed in the plate member.
22. A method for sealing an opening in a wall of a processing chamber, comprising:
activating a deployment mechanism to move an enclosure member that is disposed within the processing chamber with respect to the opening via an extended portion of the closure member;
moving a door member of the closure member that is enclosed within the processing chamber into contact with the wall to seal the opening in the chamber wall; and
establishing electrical contact between the door member and the chamber wall.
23. The method of claim 22 , wherein the door member includes an electrically conductive resilient member for sealing the opening.
24. The method of claim 23 , further comprising inserting a tongue member of the door member within a recess formed in the wall to form a labyrinth seal.
25. The method of claim 24 , wherein an interior surface of the door member is substantially flush with an interior surface of the wall.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/252,055 US20090114153A1 (en) | 2007-11-01 | 2008-10-15 | Method and apparatus for sealing an opening of a processing chamber |
US13/349,307 US9458538B2 (en) | 2007-11-01 | 2012-01-12 | Method and apparatus for sealing an opening of a processing chamber |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US98447807P | 2007-11-01 | 2007-11-01 | |
US12/252,055 US20090114153A1 (en) | 2007-11-01 | 2008-10-15 | Method and apparatus for sealing an opening of a processing chamber |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US13/349,307 Continuation US9458538B2 (en) | 2007-11-01 | 2012-01-12 | Method and apparatus for sealing an opening of a processing chamber |
Publications (1)
Publication Number | Publication Date |
---|---|
US20090114153A1 true US20090114153A1 (en) | 2009-05-07 |
Family
ID=40586846
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US12/252,055 Abandoned US20090114153A1 (en) | 2007-11-01 | 2008-10-15 | Method and apparatus for sealing an opening of a processing chamber |
US13/349,307 Expired - Fee Related US9458538B2 (en) | 2007-11-01 | 2012-01-12 | Method and apparatus for sealing an opening of a processing chamber |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US13/349,307 Expired - Fee Related US9458538B2 (en) | 2007-11-01 | 2012-01-12 | Method and apparatus for sealing an opening of a processing chamber |
Country Status (5)
Country | Link |
---|---|
US (2) | US20090114153A1 (en) |
KR (1) | KR101588565B1 (en) |
CN (1) | CN101842514B (en) |
TW (1) | TWI524447B (en) |
WO (1) | WO2009058562A1 (en) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102117735A (en) * | 2009-12-22 | 2011-07-06 | 应用材料股份有限公司 | Slit valve tunnel support assembly |
US20120055400A1 (en) * | 2009-03-31 | 2012-03-08 | Tokyo Electron Limited | Gate valve and substrate processing apparatus equipped with the same |
US20120103989A1 (en) * | 2007-11-01 | 2012-05-03 | Shinichi Kurita | Method and apparatus for sealing an opening of a processing chamber |
US10319568B2 (en) * | 2013-11-12 | 2019-06-11 | Tokyo Electron Limited | Plasma processing apparatus for performing plasma process for target object |
US20190211452A1 (en) * | 2018-01-09 | 2019-07-11 | Boe Technology Group Co., Ltd. | Plasma enhanced chemical vapor deposition equipment |
US10636629B2 (en) | 2017-10-05 | 2020-04-28 | Applied Materials, Inc. | Split slit liner door |
US11367595B2 (en) * | 2017-06-23 | 2022-06-21 | Tokyo Electron Limited | Plasma processing apparatus |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104109847A (en) * | 2013-04-16 | 2014-10-22 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Reaction cavity and plasma processing equipment |
JP6209043B2 (en) * | 2013-09-30 | 2017-10-04 | 東京エレクトロン株式会社 | Gate valve and substrate processing apparatus |
KR20160061204A (en) * | 2014-11-21 | 2016-05-31 | (주)에스티아이 | Substrate treating apparatus having vortex prevention gate and the manufacturing method |
CN106929826B (en) * | 2015-12-31 | 2019-04-23 | 北京北方华创微电子装备有限公司 | Inlet duct and semiconductor processing equipment |
CN112750738B (en) * | 2021-01-18 | 2024-02-23 | 中国电子科技集团公司第四十八研究所 | Ion beam etching equipment and etching method thereof |
KR20230155564A (en) | 2021-03-18 | 2023-11-10 | 가부시키가이샤 닛폰 쇼쿠바이 | Method for producing absorbent resin |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5324540A (en) * | 1992-08-17 | 1994-06-28 | Tokyo Electron Limited | System and method for supporting and rotating substrates in a process chamber |
US6079693A (en) * | 1998-05-20 | 2000-06-27 | Applied Komatsu Technology, Inc. | Isolation valves |
US6192827B1 (en) * | 1998-07-03 | 2001-02-27 | Applied Materials, Inc. | Double slit-valve doors for plasma processing |
US7086638B2 (en) * | 2003-05-13 | 2006-08-08 | Applied Materials, Inc. | Methods and apparatus for sealing an opening of a processing chamber |
US7105463B2 (en) * | 2000-09-15 | 2006-09-12 | Applied Materials, Inc. | Load lock chamber having two dual slot regions |
US20070000608A1 (en) * | 2005-07-01 | 2007-01-04 | Applied Materials, Inc. | Chamber isolation valve RF grounding |
US20070166133A1 (en) * | 2006-01-13 | 2007-07-19 | Applied Materials, Inc. | Decoupled chamber body |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050150452A1 (en) * | 2004-01-14 | 2005-07-14 | Soovo Sen | Process kit design for deposition chamber |
KR101588565B1 (en) * | 2007-11-01 | 2016-01-26 | 어플라이드 머티어리얼스, 인코포레이티드 | Method and apparatus for sealing an opening of a processing chamber |
-
2008
- 2008-10-15 KR KR1020107011958A patent/KR101588565B1/en not_active IP Right Cessation
- 2008-10-15 WO PCT/US2008/079957 patent/WO2009058562A1/en active Application Filing
- 2008-10-15 US US12/252,055 patent/US20090114153A1/en not_active Abandoned
- 2008-10-15 CN CN2008801145157A patent/CN101842514B/en not_active Expired - Fee Related
- 2008-10-29 TW TW097141676A patent/TWI524447B/en not_active IP Right Cessation
-
2012
- 2012-01-12 US US13/349,307 patent/US9458538B2/en not_active Expired - Fee Related
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5324540A (en) * | 1992-08-17 | 1994-06-28 | Tokyo Electron Limited | System and method for supporting and rotating substrates in a process chamber |
US6079693A (en) * | 1998-05-20 | 2000-06-27 | Applied Komatsu Technology, Inc. | Isolation valves |
US6192827B1 (en) * | 1998-07-03 | 2001-02-27 | Applied Materials, Inc. | Double slit-valve doors for plasma processing |
US7105463B2 (en) * | 2000-09-15 | 2006-09-12 | Applied Materials, Inc. | Load lock chamber having two dual slot regions |
US7086638B2 (en) * | 2003-05-13 | 2006-08-08 | Applied Materials, Inc. | Methods and apparatus for sealing an opening of a processing chamber |
US20070000608A1 (en) * | 2005-07-01 | 2007-01-04 | Applied Materials, Inc. | Chamber isolation valve RF grounding |
US7469715B2 (en) * | 2005-07-01 | 2008-12-30 | Applied Materials, Inc. | Chamber isolation valve RF grounding |
US20070166133A1 (en) * | 2006-01-13 | 2007-07-19 | Applied Materials, Inc. | Decoupled chamber body |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20120103989A1 (en) * | 2007-11-01 | 2012-05-03 | Shinichi Kurita | Method and apparatus for sealing an opening of a processing chamber |
US9458538B2 (en) * | 2007-11-01 | 2016-10-04 | Applied Materials, Inc. | Method and apparatus for sealing an opening of a processing chamber |
US20120055400A1 (en) * | 2009-03-31 | 2012-03-08 | Tokyo Electron Limited | Gate valve and substrate processing apparatus equipped with the same |
US8590861B2 (en) * | 2009-03-31 | 2013-11-26 | Tokyo Electron Limited | Gate valve and substrate processing apparatus equipped with the same |
CN102117735A (en) * | 2009-12-22 | 2011-07-06 | 应用材料股份有限公司 | Slit valve tunnel support assembly |
US10319568B2 (en) * | 2013-11-12 | 2019-06-11 | Tokyo Electron Limited | Plasma processing apparatus for performing plasma process for target object |
US11367595B2 (en) * | 2017-06-23 | 2022-06-21 | Tokyo Electron Limited | Plasma processing apparatus |
US10636629B2 (en) | 2017-10-05 | 2020-04-28 | Applied Materials, Inc. | Split slit liner door |
US20190211452A1 (en) * | 2018-01-09 | 2019-07-11 | Boe Technology Group Co., Ltd. | Plasma enhanced chemical vapor deposition equipment |
Also Published As
Publication number | Publication date |
---|---|
CN101842514A (en) | 2010-09-22 |
US20120103989A1 (en) | 2012-05-03 |
KR20100095427A (en) | 2010-08-30 |
US9458538B2 (en) | 2016-10-04 |
TW200931570A (en) | 2009-07-16 |
TWI524447B (en) | 2016-03-01 |
KR101588565B1 (en) | 2016-01-26 |
CN101842514B (en) | 2013-01-23 |
WO2009058562A1 (en) | 2009-05-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US9458538B2 (en) | Method and apparatus for sealing an opening of a processing chamber | |
US6878234B2 (en) | Plasma processing device and exhaust ring | |
KR102330725B1 (en) | Thin film encapsulation processing system and process kit permitting low-pressure tool replacement | |
US8864936B2 (en) | Apparatus and method for processing substrate | |
CN1327493C (en) | Mechanism and method for assembling processing device parts, and lock mechanism and method for locking the lock mechanism | |
US7789963B2 (en) | Chuck pedestal shield | |
US8327878B2 (en) | Chamber isolation valve RF grounding | |
CN109477221B (en) | Plasma processing apparatus | |
US20070186857A1 (en) | Plasma processing apparatus and method of using the same | |
US20080286463A1 (en) | Rf shutter | |
US20090107955A1 (en) | Offset liner for chamber evacuation | |
WO2010079756A1 (en) | Plasma processing apparatus | |
EP2080817B1 (en) | Method and apparatus for chamber cleaning by in-situ plasma excitation | |
JP4364335B2 (en) | Sputtering equipment | |
CN102117735B (en) | There is the process chamber of slit valve tunnel support | |
US11817291B2 (en) | Faraday shield and apparatus for treating substrate | |
CN113261078A (en) | Vacuum processing apparatus and method for cleaning vacuum processing apparatus | |
KR20070020903A (en) | Semiconductor manufacturing apparatus | |
JP2009246392A (en) | Substrate processing apparatus | |
KR20180093685A (en) | Plasma enhanced chemical vapor deposition apparatus | |
JP2001190944A (en) | Vacuum valve and vacuum treatment apparatus |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: APPLIED MATERIALS, INC., CALIFORNIA Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:KURITA, SHINICHI;MATSUMOTO, TAKAYUKI;TINER, ROBIN L.;AND OTHERS;REEL/FRAME:022054/0136;SIGNING DATES FROM 20081017 TO 20081106 |
|
STCB | Information on status: application discontinuation |
Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION |