US20080191235A1 - Light emitting diode structure with high heat dissipation - Google Patents

Light emitting diode structure with high heat dissipation Download PDF

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Publication number
US20080191235A1
US20080191235A1 US11/757,356 US75735607A US2008191235A1 US 20080191235 A1 US20080191235 A1 US 20080191235A1 US 75735607 A US75735607 A US 75735607A US 2008191235 A1 US2008191235 A1 US 2008191235A1
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US
United States
Prior art keywords
chip
light emitting
emitting diode
carrying portion
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US11/757,356
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English (en)
Inventor
Bily Wang
Jonnie Chuang
Miko Huang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Harvatek Corp
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Assigned to HARVATEK CORPORATION reassignment HARVATEK CORPORATION ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: CHUANG, JONNIE, HUANG, MILO, WANG, BILY
Publication of US20080191235A1 publication Critical patent/US20080191235A1/en
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/647—Heat extraction or cooling elements the elements conducting electric current to or from the semiconductor body

Definitions

  • the present invention relates to a light emitting diode, and more particular to a light emitting diode with a high heat dissipating effect.
  • LED Traditional light emitting diode
  • Traditional light emitting diode gradually replaces traditional light bulb due to its compact size, low power consumption, and long life expectancy, and thus LEDs are used extensively in the different areas such as traffic lights, signal lights, flashlights, mobile phones, lamps and large outdoor billboards. Since the brightness of a single piece of light emitting diode is very limited, several pieces of light emitting diodes are combined to produce a high-brightness light source, but such arrangement causes more complicated manufacturing processes and incurs higher costs.
  • a high-power light emitting diode is introduced to the market, and the high-power light emitting diode can produce a super high brightness light source, and its application simply requires several light emitting diodes to achieve the brightness required for illuminations and displays. Since the high-power light emitting diode can produce a super high-brightness light source and its application also causes a very high heat source, therefore a heat sinking slug is usually combined with the high-power light emitting diode to guide and dissipate the heat source produced by the light emitting chip, so as to ensure a long life expectancy of the high-power light emitting diode.
  • U.S. Pat. No. 6,274,924 entitled “Surface mountable LED package” discloses a heat sinking slug combined with a high-power light emitting diode.
  • a metal frame is prepared first; a base filled with a plastic material is formed on the metal frame; a through hole is created at the center of the base for inserting a reflector cup on the heat sinking slug into the through hole, an insulating base is produced in the reflector cup, and a chip is mounted onto the base; a lead wire is bonded between the chip and the frame; and an optical lens is packaged onto the base.
  • the inventor of the present invention based on years of experience in the related industry to conduct experiments and modifications, and finally developed a light emitting diode with a high heat dissipating effect by using simple equipment to overcome the shortcomings of the prior art and lower the manufacturing cost significantly.
  • the structure comprises: a lead frame, a chip, two lead wires, an internal casing and an external casing.
  • the lead frame has a first electrode and a second electrode, a carrying portion disposed on the first electrode, a cavity and a plurality of through holes disposed on the carrying portion, a lead coupled to an end of the carrying portion, a heat dissipating protrusion disposed on the back side of the carrying portion, a solder portion and a lead disposed on the second electrode, a plurality of through holes disposed on the solder portion for installing the visible or invisible light chip into a cavity of the first electrode, two lead wires electrically coupled to the chip, an end of the two lead wires respectively and electrically coupled to the lead frame, an internal casing formed on the chip, and an external casing having a base and a lens formed at the internal casing, the two lead wires and the lead frame.
  • FIG. 1 is a flow chart of a manufacturing procedure of a light emitting diode of the present invention
  • FIG. 2 is a front view of a lead frame of the present invention
  • FIG. 3 is a rear view of a lead frame of the present invention.
  • FIG. 4 is a schematic view of adhering a chip onto a lead frame of the present invention.
  • FIG. 5 is a schematic view of wire bonding a chip of the present invention.
  • FIG. 6 is a schematic view of packaging a casing of the present invention
  • FIG. 7 is a schematic view of applying the present invention.
  • FIG. 8 is a schematic view of a light emitting diode of another preferred embodiment of the present invention.
  • the manufacturing procedure of a light emitting diode with a high heat dissipation effect comprises the steps of:
  • Step 10 preparing a thick metal
  • Step 20 shaping the thick metal into a plurality of connected lead frames by an etching technology or a punching technology
  • Step 30 fixing a visible or invisible light chip onto the lead frame by an adhesive to complete a chip bonding process, wherein the adhesive is either non-conductive or conductive (such as a silver paste or a thermal paste);
  • Step 40 soldering the two lead wires onto the chip, and then soldering the two lead wires with the lead frame to complete a wire bonding process
  • Step 50 dispensing silicon onto the chip to protect the chip, and dispensing an epoxy compound on the surface of the silicon (such as the manufacture of yellow light emitting diodes) at the chip, adhesive, lead wire and lead frame, and if it is necessary to manufacture a white light emitting diode, a fluorescent colloid is dispensed onto the chip first, and then silicon is dispensed onto the fluorescent colloid, and finally the epoxy resin is dispensed onto silicon; and
  • Step 60 pressing the compound into cylindrical, hemispherical or square base and lens by a thermal compression technology to complete the manufacture of a light emitting diode.
  • a thick metal is etched and punched into a first electrode 11 and a second electrode 12 , both coupled to a lead frame 1
  • the first electrode 11 has a carrying portion 111
  • the carrying portion 111 has a circular cavity 112 and a plurality of through holes 113
  • an end of the carrying portion 111 is coupled to a lead 114
  • the back side of the carrying portion 111 forms a circular heat dissipating protrusion 115
  • the second electrode 12 forms a solder portion 121 and a lead 122
  • the solder portion 121 has a plurality of through holes 123
  • the through holes 113 , 123 are provided for passing the compound of the casing through the through holes 113 , 123 and securing the lead frame 11 during the thermal compressing process of the casing of the light emitting diode.
  • the chip bonding is performed for the lead frame 1 , and an adhesive 2 is coated onto a cavity 112 of the first electrode 11 , and then the visible or invisible light chip 3 is adhered into the cavity 112 .
  • the adhesive 2 is a non-conductive silver paste or thermal paste.
  • two lead wires 31 , 32 are soldered onto the chip 3 after a chip bonding is performed for the first electrode 11 of the lead frame 1 , and the two lead wires 31 , 32 are respectively and electrically coupled to the carrying portion 111 of the first electrode 11 and the solder portion 121 of the second electrode 12 , such that if the two lead wires 31 , 32 are electrically conducted, the chip 3 will produce a light source.
  • the chip 3 is a light emitting diode chip.
  • silicon is dispensed onto the chip 3 to form an internal casing 4 for protecting the chip 3 after the chip bonding and wire bonding are performed at the lead frame 1 , and then an external casing 5 is covered onto the lead frame 1 , chip 3 and lead wire 31 , 32 and internal casing 4 , wherein the external casing 5 is made of an epoxy compound.
  • a base 51 and a lens 52 are formed integrally by a thermal compression technology, a light emitting diode with a high heat dissipating effect is completed.
  • FIG. 7 for a schematic view of applying the present invention, the back sides of first and second electrodes 11 , 12 of the lead frame 1 are exposed, after the external casing 5 is thermally pressed.
  • the back sides of the first and second electrodes 11 , 12 are in full contact with the aluminum board 6 , so that when the light emitting diodes are lit, the heat produced by the light emitting diodes are conducted through the back sides of the first electrode 11 (including a heat dissipating protrusion 115 ) and the second electrode 12 to the aluminum board 6 .
  • Such arrangement can expedite the heat dissipation of the light emitting diodes to extend the life expectancy of the light emitting diodes.
  • FIG. 8 for a schematic view of a light emitting diode of another preferred embodiment of the present invention.
  • a lead frame 1 , a light chip 3 and lead wires 31 , 32 are produced first, and then a fluorescent colloid is dispensed onto the chip 3 to form a fluorescent layer 7 , and silicon is dispensed onto the fluorescent layer 7 to form an internal casing 4 for protecting the chip 3 , and an external casing 5 is covered onto the lead frame 1 , chip 3 , lead wires 31 , 32 and internal casing 4 , wherein the external casing 5 is made of an epoxy compound, and the compound is used for integrally shaping a base 51 and a lens 52 by a thermal compression technology, so as to complete the manufacture of a light emitting diode with a high heat dissipating effect.
  • the light emitting diode of the invention comes with a simple structure, an easy manufacturing process, and easy-to-use equipments for lowering the manufacturing cost of the light emitting diode.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)
US11/757,356 2007-02-13 2007-06-02 Light emitting diode structure with high heat dissipation Abandoned US20080191235A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
TW096105230A TW200834968A (en) 2007-02-13 2007-02-13 Method of making light-emitting diode structure with high heat dissipation effect and structure made thereby
TW096105230 2007-02-13

Publications (1)

Publication Number Publication Date
US20080191235A1 true US20080191235A1 (en) 2008-08-14

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Family Applications (2)

Application Number Title Priority Date Filing Date
US11/757,356 Abandoned US20080191235A1 (en) 2007-02-13 2007-06-02 Light emitting diode structure with high heat dissipation
US11/757,355 Expired - Fee Related US7749781B2 (en) 2007-02-13 2007-06-02 Method for manufacturing a light-emitting diode having high heat-dissipating efficiency

Family Applications After (1)

Application Number Title Priority Date Filing Date
US11/757,355 Expired - Fee Related US7749781B2 (en) 2007-02-13 2007-06-02 Method for manufacturing a light-emitting diode having high heat-dissipating efficiency

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US (2) US20080191235A1 (ja)
TW (1) TW200834968A (ja)

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080038923A1 (en) * 2004-01-30 2008-02-14 International Business Machines Corporation Device and methodology for reducing effective dielectric constant in semiconductor devices
US20080194048A1 (en) * 2007-02-13 2008-08-14 Bily Wang Method for manufacturing a light-emitting diode having high heat-dissipating efficiency
US20090191669A1 (en) * 2008-01-24 2009-07-30 Peng Yu-Kang Method of encapsulating an electronic component
US20100264437A1 (en) * 2009-04-17 2010-10-21 Avago Technologies Ecbu Ip (Singapore) Pte.Ltd. PLCC Package With A Reflector Cup Surrounded By An Encapsulant
US20100264436A1 (en) * 2009-04-17 2010-10-21 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. PLCC Package With A Reflector Cup Surrounded By A Single Encapsulant
US20100270580A1 (en) * 2009-04-22 2010-10-28 Jason Loomis Posselt Substrate based light source package with electrical leads
US20110157868A1 (en) * 2009-12-30 2011-06-30 Harvatek Corporation Light emission module with high-efficiency light emission and high-efficiency heat dissipation and applications thereof
EP2348550A3 (en) * 2010-01-20 2011-10-26 Silitek Electronic (Guangzhou) Co., Ltd. Package structure and LED package structure
US20120044679A1 (en) * 2010-08-17 2012-02-23 Lextar Electronics Corporation Point light source and light source module using the same
EP2466655A1 (en) * 2010-12-14 2012-06-20 Liang Meng Plastic Share Co. Ltd. LED package structure and manufacturing method for the same
CN103022275A (zh) * 2011-09-23 2013-04-03 展晶科技(深圳)有限公司 发光二极管的封装方法
CN103065983A (zh) * 2011-10-24 2013-04-24 安华高科技Ecbuip(新加坡)私人有限公司 在耦合器上同时分配硅树脂
CN103187409A (zh) * 2011-12-31 2013-07-03 刘胜 基于引线框架的led阵列封装光源模块
CN106328642A (zh) * 2016-10-18 2017-01-11 深圳成光兴光电技术股份有限公司 一种混合光源贴片led
US20170062665A1 (en) * 2007-12-03 2017-03-02 Seoul Semiconductor Co., Ltd. Slim led package
JP2018113460A (ja) * 2013-04-12 2018-07-19 日亜化学工業株式会社 発光装置

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TW200939869A (en) * 2008-03-05 2009-09-16 Harvatek Corp An LED chip package structure with a high-efficiency heat-dissipating substrate and packaging method thereof
TWI483418B (zh) 2009-04-09 2015-05-01 Lextar Electronics Corp 發光二極體封裝方法
CN103378252B (zh) 2012-04-16 2016-01-06 展晶科技(深圳)有限公司 发光二极管模组
CN108538989A (zh) * 2018-06-23 2018-09-14 江苏罗化新材料有限公司 一种高光效单面发光csp led灯珠及其制造方法
CN112635646B (zh) * 2021-01-14 2021-10-01 深圳市科润光电股份有限公司 一种应用于低热阻的晶圆级led封装结构
CN114038978B (zh) * 2021-09-15 2023-07-07 深圳市华笙光电子有限公司 一种圆片级玻璃型腔的硅通孔led封装结构

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US20080254630A1 (en) * 2004-01-30 2008-10-16 International Business Machines Corporation Device and methodology for reducing effective dielectric constant in semiconductor devices
US8129286B2 (en) 2004-01-30 2012-03-06 International Business Machines Corporation Reducing effective dielectric constant in semiconductor devices
US8343868B2 (en) 2004-01-30 2013-01-01 International Business Machines Corporation Device and methodology for reducing effective dielectric constant in semiconductor devices
US20110111590A1 (en) * 2004-01-30 2011-05-12 International Business Machines Corporation Device and methodology for reducing effective dielectric constant in semiconductor devices
US20080038923A1 (en) * 2004-01-30 2008-02-14 International Business Machines Corporation Device and methodology for reducing effective dielectric constant in semiconductor devices
US7892940B2 (en) * 2004-01-30 2011-02-22 International Business Machines Corporation Device and methodology for reducing effective dielectric constant in semiconductor devices
US20080194048A1 (en) * 2007-02-13 2008-08-14 Bily Wang Method for manufacturing a light-emitting diode having high heat-dissipating efficiency
US7749781B2 (en) * 2007-02-13 2010-07-06 Harvatek Corporation Method for manufacturing a light-emitting diode having high heat-dissipating efficiency
US20170062665A1 (en) * 2007-12-03 2017-03-02 Seoul Semiconductor Co., Ltd. Slim led package
US9899573B2 (en) * 2007-12-03 2018-02-20 Seoul Semiconductor Co., Ltd. Slim LED package
US20090191669A1 (en) * 2008-01-24 2009-07-30 Peng Yu-Kang Method of encapsulating an electronic component
US20100264436A1 (en) * 2009-04-17 2010-10-21 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. PLCC Package With A Reflector Cup Surrounded By A Single Encapsulant
US20100264437A1 (en) * 2009-04-17 2010-10-21 Avago Technologies Ecbu Ip (Singapore) Pte.Ltd. PLCC Package With A Reflector Cup Surrounded By An Encapsulant
US8101955B2 (en) * 2009-04-17 2012-01-24 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. PLCC package with a reflector cup surrounded by an encapsulant
US8089075B2 (en) * 2009-04-17 2012-01-03 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. LFCC package with a reflector cup surrounded by a single encapsulant
US20100270580A1 (en) * 2009-04-22 2010-10-28 Jason Loomis Posselt Substrate based light source package with electrical leads
WO2010123647A3 (en) * 2009-04-22 2011-03-24 Bridgelux, Inc. Substrate based light source package with electrical leads
WO2010123647A2 (en) * 2009-04-22 2010-10-28 Bridgelux, Inc. Substrate based light source package with electrical leads
US20110157868A1 (en) * 2009-12-30 2011-06-30 Harvatek Corporation Light emission module with high-efficiency light emission and high-efficiency heat dissipation and applications thereof
EP2348550A3 (en) * 2010-01-20 2011-10-26 Silitek Electronic (Guangzhou) Co., Ltd. Package structure and LED package structure
US20120044679A1 (en) * 2010-08-17 2012-02-23 Lextar Electronics Corporation Point light source and light source module using the same
US8511853B2 (en) * 2010-08-17 2013-08-20 Lextar Electronics Corporation Point light source and light source module using the same
EP2466655A1 (en) * 2010-12-14 2012-06-20 Liang Meng Plastic Share Co. Ltd. LED package structure and manufacturing method for the same
CN103022275A (zh) * 2011-09-23 2013-04-03 展晶科技(深圳)有限公司 发光二极管的封装方法
CN103065983A (zh) * 2011-10-24 2013-04-24 安华高科技Ecbuip(新加坡)私人有限公司 在耦合器上同时分配硅树脂
US8563337B2 (en) 2011-10-24 2013-10-22 Avago Technologies General Ip (Singapore) Pte. Ltd. Simultaneous silicone dispension on coupler
CN103187409A (zh) * 2011-12-31 2013-07-03 刘胜 基于引线框架的led阵列封装光源模块
JP2018113460A (ja) * 2013-04-12 2018-07-19 日亜化学工業株式会社 発光装置
JP2020010053A (ja) * 2013-04-12 2020-01-16 日亜化学工業株式会社 発光装置
CN106328642A (zh) * 2016-10-18 2017-01-11 深圳成光兴光电技术股份有限公司 一种混合光源贴片led

Also Published As

Publication number Publication date
TW200834968A (en) 2008-08-16
US7749781B2 (en) 2010-07-06
TWI331814B (ja) 2010-10-11
US20080194048A1 (en) 2008-08-14

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