US20080191235A1 - Light emitting diode structure with high heat dissipation - Google Patents
Light emitting diode structure with high heat dissipation Download PDFInfo
- Publication number
- US20080191235A1 US20080191235A1 US11/757,356 US75735607A US2008191235A1 US 20080191235 A1 US20080191235 A1 US 20080191235A1 US 75735607 A US75735607 A US 75735607A US 2008191235 A1 US2008191235 A1 US 2008191235A1
- Authority
- US
- United States
- Prior art keywords
- chip
- light emitting
- emitting diode
- carrying portion
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 230000017525 heat dissipation Effects 0.000 title claims description 4
- 229910000679 solder Inorganic materials 0.000 claims description 9
- 239000000853 adhesive Substances 0.000 claims description 7
- 230000001070 adhesive effect Effects 0.000 claims description 7
- 150000001875 compounds Chemical class 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims description 5
- 239000004593 Epoxy Substances 0.000 claims description 4
- 239000003822 epoxy resin Substances 0.000 claims description 2
- 229920000647 polyepoxide Polymers 0.000 claims description 2
- 230000008878 coupling Effects 0.000 claims 1
- 238000010168 coupling process Methods 0.000 claims 1
- 238000005859 coupling reaction Methods 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 7
- 238000004519 manufacturing process Methods 0.000 description 16
- 238000005516 engineering process Methods 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000000084 colloidal system Substances 0.000 description 3
- 230000006835 compression Effects 0.000 description 3
- 238000007906 compression Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 238000007493 shaping process Methods 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/647—Heat extraction or cooling elements the elements conducting electric current to or from the semiconductor body
Definitions
- the present invention relates to a light emitting diode, and more particular to a light emitting diode with a high heat dissipating effect.
- LED Traditional light emitting diode
- Traditional light emitting diode gradually replaces traditional light bulb due to its compact size, low power consumption, and long life expectancy, and thus LEDs are used extensively in the different areas such as traffic lights, signal lights, flashlights, mobile phones, lamps and large outdoor billboards. Since the brightness of a single piece of light emitting diode is very limited, several pieces of light emitting diodes are combined to produce a high-brightness light source, but such arrangement causes more complicated manufacturing processes and incurs higher costs.
- a high-power light emitting diode is introduced to the market, and the high-power light emitting diode can produce a super high brightness light source, and its application simply requires several light emitting diodes to achieve the brightness required for illuminations and displays. Since the high-power light emitting diode can produce a super high-brightness light source and its application also causes a very high heat source, therefore a heat sinking slug is usually combined with the high-power light emitting diode to guide and dissipate the heat source produced by the light emitting chip, so as to ensure a long life expectancy of the high-power light emitting diode.
- U.S. Pat. No. 6,274,924 entitled “Surface mountable LED package” discloses a heat sinking slug combined with a high-power light emitting diode.
- a metal frame is prepared first; a base filled with a plastic material is formed on the metal frame; a through hole is created at the center of the base for inserting a reflector cup on the heat sinking slug into the through hole, an insulating base is produced in the reflector cup, and a chip is mounted onto the base; a lead wire is bonded between the chip and the frame; and an optical lens is packaged onto the base.
- the inventor of the present invention based on years of experience in the related industry to conduct experiments and modifications, and finally developed a light emitting diode with a high heat dissipating effect by using simple equipment to overcome the shortcomings of the prior art and lower the manufacturing cost significantly.
- the structure comprises: a lead frame, a chip, two lead wires, an internal casing and an external casing.
- the lead frame has a first electrode and a second electrode, a carrying portion disposed on the first electrode, a cavity and a plurality of through holes disposed on the carrying portion, a lead coupled to an end of the carrying portion, a heat dissipating protrusion disposed on the back side of the carrying portion, a solder portion and a lead disposed on the second electrode, a plurality of through holes disposed on the solder portion for installing the visible or invisible light chip into a cavity of the first electrode, two lead wires electrically coupled to the chip, an end of the two lead wires respectively and electrically coupled to the lead frame, an internal casing formed on the chip, and an external casing having a base and a lens formed at the internal casing, the two lead wires and the lead frame.
- FIG. 1 is a flow chart of a manufacturing procedure of a light emitting diode of the present invention
- FIG. 2 is a front view of a lead frame of the present invention
- FIG. 3 is a rear view of a lead frame of the present invention.
- FIG. 4 is a schematic view of adhering a chip onto a lead frame of the present invention.
- FIG. 5 is a schematic view of wire bonding a chip of the present invention.
- FIG. 6 is a schematic view of packaging a casing of the present invention
- FIG. 7 is a schematic view of applying the present invention.
- FIG. 8 is a schematic view of a light emitting diode of another preferred embodiment of the present invention.
- the manufacturing procedure of a light emitting diode with a high heat dissipation effect comprises the steps of:
- Step 10 preparing a thick metal
- Step 20 shaping the thick metal into a plurality of connected lead frames by an etching technology or a punching technology
- Step 30 fixing a visible or invisible light chip onto the lead frame by an adhesive to complete a chip bonding process, wherein the adhesive is either non-conductive or conductive (such as a silver paste or a thermal paste);
- Step 40 soldering the two lead wires onto the chip, and then soldering the two lead wires with the lead frame to complete a wire bonding process
- Step 50 dispensing silicon onto the chip to protect the chip, and dispensing an epoxy compound on the surface of the silicon (such as the manufacture of yellow light emitting diodes) at the chip, adhesive, lead wire and lead frame, and if it is necessary to manufacture a white light emitting diode, a fluorescent colloid is dispensed onto the chip first, and then silicon is dispensed onto the fluorescent colloid, and finally the epoxy resin is dispensed onto silicon; and
- Step 60 pressing the compound into cylindrical, hemispherical or square base and lens by a thermal compression technology to complete the manufacture of a light emitting diode.
- a thick metal is etched and punched into a first electrode 11 and a second electrode 12 , both coupled to a lead frame 1
- the first electrode 11 has a carrying portion 111
- the carrying portion 111 has a circular cavity 112 and a plurality of through holes 113
- an end of the carrying portion 111 is coupled to a lead 114
- the back side of the carrying portion 111 forms a circular heat dissipating protrusion 115
- the second electrode 12 forms a solder portion 121 and a lead 122
- the solder portion 121 has a plurality of through holes 123
- the through holes 113 , 123 are provided for passing the compound of the casing through the through holes 113 , 123 and securing the lead frame 11 during the thermal compressing process of the casing of the light emitting diode.
- the chip bonding is performed for the lead frame 1 , and an adhesive 2 is coated onto a cavity 112 of the first electrode 11 , and then the visible or invisible light chip 3 is adhered into the cavity 112 .
- the adhesive 2 is a non-conductive silver paste or thermal paste.
- two lead wires 31 , 32 are soldered onto the chip 3 after a chip bonding is performed for the first electrode 11 of the lead frame 1 , and the two lead wires 31 , 32 are respectively and electrically coupled to the carrying portion 111 of the first electrode 11 and the solder portion 121 of the second electrode 12 , such that if the two lead wires 31 , 32 are electrically conducted, the chip 3 will produce a light source.
- the chip 3 is a light emitting diode chip.
- silicon is dispensed onto the chip 3 to form an internal casing 4 for protecting the chip 3 after the chip bonding and wire bonding are performed at the lead frame 1 , and then an external casing 5 is covered onto the lead frame 1 , chip 3 and lead wire 31 , 32 and internal casing 4 , wherein the external casing 5 is made of an epoxy compound.
- a base 51 and a lens 52 are formed integrally by a thermal compression technology, a light emitting diode with a high heat dissipating effect is completed.
- FIG. 7 for a schematic view of applying the present invention, the back sides of first and second electrodes 11 , 12 of the lead frame 1 are exposed, after the external casing 5 is thermally pressed.
- the back sides of the first and second electrodes 11 , 12 are in full contact with the aluminum board 6 , so that when the light emitting diodes are lit, the heat produced by the light emitting diodes are conducted through the back sides of the first electrode 11 (including a heat dissipating protrusion 115 ) and the second electrode 12 to the aluminum board 6 .
- Such arrangement can expedite the heat dissipation of the light emitting diodes to extend the life expectancy of the light emitting diodes.
- FIG. 8 for a schematic view of a light emitting diode of another preferred embodiment of the present invention.
- a lead frame 1 , a light chip 3 and lead wires 31 , 32 are produced first, and then a fluorescent colloid is dispensed onto the chip 3 to form a fluorescent layer 7 , and silicon is dispensed onto the fluorescent layer 7 to form an internal casing 4 for protecting the chip 3 , and an external casing 5 is covered onto the lead frame 1 , chip 3 , lead wires 31 , 32 and internal casing 4 , wherein the external casing 5 is made of an epoxy compound, and the compound is used for integrally shaping a base 51 and a lens 52 by a thermal compression technology, so as to complete the manufacture of a light emitting diode with a high heat dissipating effect.
- the light emitting diode of the invention comes with a simple structure, an easy manufacturing process, and easy-to-use equipments for lowering the manufacturing cost of the light emitting diode.
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW096105230A TW200834968A (en) | 2007-02-13 | 2007-02-13 | Method of making light-emitting diode structure with high heat dissipation effect and structure made thereby |
TW096105230 | 2007-02-13 |
Publications (1)
Publication Number | Publication Date |
---|---|
US20080191235A1 true US20080191235A1 (en) | 2008-08-14 |
Family
ID=39685075
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US11/757,356 Abandoned US20080191235A1 (en) | 2007-02-13 | 2007-06-02 | Light emitting diode structure with high heat dissipation |
US11/757,355 Expired - Fee Related US7749781B2 (en) | 2007-02-13 | 2007-06-02 | Method for manufacturing a light-emitting diode having high heat-dissipating efficiency |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US11/757,355 Expired - Fee Related US7749781B2 (en) | 2007-02-13 | 2007-06-02 | Method for manufacturing a light-emitting diode having high heat-dissipating efficiency |
Country Status (2)
Country | Link |
---|---|
US (2) | US20080191235A1 (ja) |
TW (1) | TW200834968A (ja) |
Cited By (16)
Publication number | Priority date | Publication date | Assignee | Title |
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US20080038923A1 (en) * | 2004-01-30 | 2008-02-14 | International Business Machines Corporation | Device and methodology for reducing effective dielectric constant in semiconductor devices |
US20080194048A1 (en) * | 2007-02-13 | 2008-08-14 | Bily Wang | Method for manufacturing a light-emitting diode having high heat-dissipating efficiency |
US20090191669A1 (en) * | 2008-01-24 | 2009-07-30 | Peng Yu-Kang | Method of encapsulating an electronic component |
US20100264437A1 (en) * | 2009-04-17 | 2010-10-21 | Avago Technologies Ecbu Ip (Singapore) Pte.Ltd. | PLCC Package With A Reflector Cup Surrounded By An Encapsulant |
US20100264436A1 (en) * | 2009-04-17 | 2010-10-21 | Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. | PLCC Package With A Reflector Cup Surrounded By A Single Encapsulant |
US20100270580A1 (en) * | 2009-04-22 | 2010-10-28 | Jason Loomis Posselt | Substrate based light source package with electrical leads |
US20110157868A1 (en) * | 2009-12-30 | 2011-06-30 | Harvatek Corporation | Light emission module with high-efficiency light emission and high-efficiency heat dissipation and applications thereof |
EP2348550A3 (en) * | 2010-01-20 | 2011-10-26 | Silitek Electronic (Guangzhou) Co., Ltd. | Package structure and LED package structure |
US20120044679A1 (en) * | 2010-08-17 | 2012-02-23 | Lextar Electronics Corporation | Point light source and light source module using the same |
EP2466655A1 (en) * | 2010-12-14 | 2012-06-20 | Liang Meng Plastic Share Co. Ltd. | LED package structure and manufacturing method for the same |
CN103022275A (zh) * | 2011-09-23 | 2013-04-03 | 展晶科技(深圳)有限公司 | 发光二极管的封装方法 |
CN103065983A (zh) * | 2011-10-24 | 2013-04-24 | 安华高科技Ecbuip(新加坡)私人有限公司 | 在耦合器上同时分配硅树脂 |
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US20170062665A1 (en) * | 2007-12-03 | 2017-03-02 | Seoul Semiconductor Co., Ltd. | Slim led package |
JP2018113460A (ja) * | 2013-04-12 | 2018-07-19 | 日亜化学工業株式会社 | 発光装置 |
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- 2007-02-13 TW TW096105230A patent/TW200834968A/zh unknown
- 2007-06-02 US US11/757,356 patent/US20080191235A1/en not_active Abandoned
- 2007-06-02 US US11/757,355 patent/US7749781B2/en not_active Expired - Fee Related
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Cited By (30)
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US20080254630A1 (en) * | 2004-01-30 | 2008-10-16 | International Business Machines Corporation | Device and methodology for reducing effective dielectric constant in semiconductor devices |
US8129286B2 (en) | 2004-01-30 | 2012-03-06 | International Business Machines Corporation | Reducing effective dielectric constant in semiconductor devices |
US8343868B2 (en) | 2004-01-30 | 2013-01-01 | International Business Machines Corporation | Device and methodology for reducing effective dielectric constant in semiconductor devices |
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US20080194048A1 (en) * | 2007-02-13 | 2008-08-14 | Bily Wang | Method for manufacturing a light-emitting diode having high heat-dissipating efficiency |
US7749781B2 (en) * | 2007-02-13 | 2010-07-06 | Harvatek Corporation | Method for manufacturing a light-emitting diode having high heat-dissipating efficiency |
US20170062665A1 (en) * | 2007-12-03 | 2017-03-02 | Seoul Semiconductor Co., Ltd. | Slim led package |
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US20090191669A1 (en) * | 2008-01-24 | 2009-07-30 | Peng Yu-Kang | Method of encapsulating an electronic component |
US20100264436A1 (en) * | 2009-04-17 | 2010-10-21 | Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. | PLCC Package With A Reflector Cup Surrounded By A Single Encapsulant |
US20100264437A1 (en) * | 2009-04-17 | 2010-10-21 | Avago Technologies Ecbu Ip (Singapore) Pte.Ltd. | PLCC Package With A Reflector Cup Surrounded By An Encapsulant |
US8101955B2 (en) * | 2009-04-17 | 2012-01-24 | Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. | PLCC package with a reflector cup surrounded by an encapsulant |
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US20100270580A1 (en) * | 2009-04-22 | 2010-10-28 | Jason Loomis Posselt | Substrate based light source package with electrical leads |
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US20120044679A1 (en) * | 2010-08-17 | 2012-02-23 | Lextar Electronics Corporation | Point light source and light source module using the same |
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EP2466655A1 (en) * | 2010-12-14 | 2012-06-20 | Liang Meng Plastic Share Co. Ltd. | LED package structure and manufacturing method for the same |
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US8563337B2 (en) | 2011-10-24 | 2013-10-22 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Simultaneous silicone dispension on coupler |
CN103187409A (zh) * | 2011-12-31 | 2013-07-03 | 刘胜 | 基于引线框架的led阵列封装光源模块 |
JP2018113460A (ja) * | 2013-04-12 | 2018-07-19 | 日亜化学工業株式会社 | 発光装置 |
JP2020010053A (ja) * | 2013-04-12 | 2020-01-16 | 日亜化学工業株式会社 | 発光装置 |
CN106328642A (zh) * | 2016-10-18 | 2017-01-11 | 深圳成光兴光电技术股份有限公司 | 一种混合光源贴片led |
Also Published As
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TW200834968A (en) | 2008-08-16 |
US7749781B2 (en) | 2010-07-06 |
TWI331814B (ja) | 2010-10-11 |
US20080194048A1 (en) | 2008-08-14 |
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