US20080045124A1 - Sawing method for a wafer - Google Patents

Sawing method for a wafer Download PDF

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Publication number
US20080045124A1
US20080045124A1 US11/785,710 US78571007A US2008045124A1 US 20080045124 A1 US20080045124 A1 US 20080045124A1 US 78571007 A US78571007 A US 78571007A US 2008045124 A1 US2008045124 A1 US 2008045124A1
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United States
Prior art keywords
wafer
sawing
protection layer
active surface
grinding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US11/785,710
Inventor
Fu-Tang Chu
Chi-Yuam Chung
Ji-Ping Teng
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Advanced Semiconductor Engineering Inc
Original Assignee
Advanced Semiconductor Engineering Inc
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Filing date
Publication date
Application filed by Advanced Semiconductor Engineering Inc filed Critical Advanced Semiconductor Engineering Inc
Assigned to ADVANCED SEMICONDUCTOR ENGINEERING, INC. reassignment ADVANCED SEMICONDUCTOR ENGINEERING, INC. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: CHU, FU-TANG, CHUNG, CHI-YUAM, TENG, JI-PING
Publication of US20080045124A1 publication Critical patent/US20080045124A1/en
Abandoned legal-status Critical Current

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
    • B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
    • B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer

Definitions

  • the invention relates to a sawing method for a wafer, particularly to a sawing method for a wafer with a protection layer coating on a surface of the wafer.
  • FIGS. 1 to 4 show the steps for a conventional sawing method.
  • a wafer 10 is provided.
  • the wafer 10 has an active surface 101 and a back surface 102 , and the active surface 101 has a plurality of sawing lines (not shown).
  • a grinding tape 11 is then taped on the active surface 101 .
  • the grinding tape 11 is used to protect the active surface 101 in the following grinding process.
  • the wafer 10 is thinned by grinding the back surface 102 .
  • the wafer 10 is thinned by using the grinding wheel of a grinding machine (not shown) to grind the back surface 102 .
  • the grinding tape 11 is then removed, as shown in FIG. 3 .
  • the wafer 10 is sawed by using cutting tools along the sawing lines on the active surface 101 to form a plurality of dice 12 , as shown in FIG. 4 .
  • the conventional sawing method there is no protection layer to protect the wafer 10 after the step of thinning the wafer 10 , so that the surfaces of the sawing lines peel when sawing the wafer 10 . Furthermore, a larger area near the sawing lines may also peel, and the active surface 101 of the wafer 10 will be damaged and scratched.
  • the grinding tape 11 after the grinding step, the grinding tape 11 must be removed, and the wafer 10 is then sawed. Therefore, when sawing the wafer to form a plurality of dice, the active surface of the dice will be contaminated.
  • the sawing method of the invention comprises: (a) providing a wafer, the wafer having an active surface and a back surface, the active surface having a plurality of sawing lines; (b) coating a protection layer on the active surface and the sawing lines; (c) taping a grinding tape on a surface of the protection layer; (d) grinding the back surface of the wafer to thin the wafer; (e) removing the grinding tape; and (f) sawing the wafer to form a plurality of dice.
  • the protection layer still attaches to the wafer after the step of thinning the wafer, so that the protection layer can provide protection for the wafer. Therefore, the surfaces of the sawing lines will not peel when sawing the wafer. Also, a larger peeling area near the sawing lines can be avoided, and the active surface of the wafer is not damaged and scratched. Furthermore, the protection layer is removed after the wafer is sawed, so that the active surface of the dice will not be contaminated when sawing the wafer to form the dice.
  • FIG. 1 shows the step for taping a grinding tape on a wafer according to a conventional method
  • FIG. 2 shows the step for grinding the wafer according to the conventional method
  • FIG. 3 shows the step for removing the grinding tape according to the conventional method
  • FIG. 4 shows the step for sawing the wafer according to the conventional method
  • FIG. 5 shows a wafer of the present invention
  • FIG. 6 shows the step for coating a protection layer on the wafer according to the present invention
  • FIG. 7 shows the step for taping a grinding tape on the wafer according to the present invention
  • FIG. 8 shows the step for grinding the wafer according to the present invention
  • FIG. 9 shows the step for removing the grinding tape according to the present invention.
  • FIG. 10 shows the step for sawing the wafer according to the present invention.
  • FIG. 11 shows the step for removing the protection layer according to the present invention.
  • FIGS. 5 to 10 show a sawing method for a wafer according to the present invention.
  • a wafer 20 is provided.
  • the wafer 20 has an active surface 201 and a back surface 202 , and the active surface 201 has a plurality of sawing lines (not shown).
  • a protection layer 21 is coated on the active surface 201 and the sawing lines, and the protection layer 21 totally covers the active surface 201 and the sawing lines.
  • the protection layer 21 is coated on the active surface 201 and the sawing lines by using a spin-coating method.
  • the protection layer 21 is an adhesive.
  • the adhesive is epoxy.
  • a baking step for solidifying the protection layer 21 proceeds so as to protect the wafer 20 . Since the protection layer 21 coated on the active surface 201 is liquid material, the protection layer 21 can totally cover the active surface 201 and the sawing lines. Furthermore, by utilizing the liquid characteristics of the protection layer 21 , the protection layer 21 can tightly attach to the active surface 201 and the sawing lines, and form with a very flat surface.
  • a grinding tape 22 is taped on a surface of the protection layer 21 .
  • the grinding tape 22 can provide more protection for the wafer 20 .
  • the wafer 20 is thinned by using the grinding wheel of a grinding machine (not shown) to grind the back surface 202 .
  • the tightly attached protection layer 21 and the grinding tape 22 can provide a supporting force for the edge of the wafer 20 . Therefore, the problems of die cracking can be avoided, and the active surface 201 of the wafer 20 will not be damaged.
  • the grinding tape 22 is removed.
  • the wafer 20 is then sawed by using cutting tools along the sawing lines on the active surface 201 to form a plurality of dice 23 , as shown in FIG. 10 .
  • the protection layer 21 may further be removed by using a solvent, as shown in FIG. 11 .
  • the protection layer 21 still attaches to the wafer 20 after the step of thinning the wafer 20 , so that the protection layer 21 can provide protection for the wafer 20 . Therefore, the surfaces of the sawing lines will not peel when sawing the wafer 20 . Also, a larger peeling area near the sawing lines can be avoided, and the active surface 201 of the wafer 20 is not damaged and scratched. Furthermore, the protection layer 21 is removed after the wafer 20 is sawed, so that the active surface 201 of the dice 23 will not be contaminated when sawing the wafer 20 to form the dice 23 .

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

The present invention relates to a sawing method for a wafer. The sawing method of the invention comprises: (a) providing a wafer, the wafer having an active surface and a back surface, the active surface having a plurality of sawing lines; (b) coating a protection layer on the active surface and the sawing lines; (c) taping a grinding tape on a surface of the protection layer; (d) grinding the back surface of the wafer to thin the wafer; (e) removing the grinding tape; and (f) sawing the wafer to form a plurality of dice. Whereby, the problems of die cracking, die scratching, die contamination and peeling of the surface of the sawing lines can be avoided.

Description

    BACKGROUND OF THE INVENTION
  • 1. Field of the Invention
  • The invention relates to a sawing method for a wafer, particularly to a sawing method for a wafer with a protection layer coating on a surface of the wafer.
  • 2. Description of the Related Art
  • FIGS. 1 to 4 show the steps for a conventional sawing method. Referring to FIG. 1, firstly, a wafer 10 is provided. The wafer 10 has an active surface 101 and a back surface 102, and the active surface 101 has a plurality of sawing lines (not shown). A grinding tape 11 is then taped on the active surface 101. The grinding tape 11 is used to protect the active surface 101 in the following grinding process.
  • Referring to FIG. 2, the wafer 10 is thinned by grinding the back surface 102. For the conventional sawing method, the wafer 10 is thinned by using the grinding wheel of a grinding machine (not shown) to grind the back surface 102. The grinding tape 11 is then removed, as shown in FIG. 3. Finally, the wafer 10 is sawed by using cutting tools along the sawing lines on the active surface 101 to form a plurality of dice 12, as shown in FIG. 4.
  • According to the conventional sawing method, there is no protection layer to protect the wafer 10 after the step of thinning the wafer 10, so that the surfaces of the sawing lines peel when sawing the wafer 10. Furthermore, a larger area near the sawing lines may also peel, and the active surface 101 of the wafer 10 will be damaged and scratched. In addition, after the grinding step, the grinding tape 11 must be removed, and the wafer 10 is then sawed. Therefore, when sawing the wafer to form a plurality of dice, the active surface of the dice will be contaminated.
  • Consequently, there is an existing need for providing a sawing method for a wafer to solve the above-mentioned problems.
    • SUMMARY OF THE INVENTION
  • One objective of the present invention is to provide a sawing method for a wafer. The sawing method of the invention comprises: (a) providing a wafer, the wafer having an active surface and a back surface, the active surface having a plurality of sawing lines; (b) coating a protection layer on the active surface and the sawing lines; (c) taping a grinding tape on a surface of the protection layer; (d) grinding the back surface of the wafer to thin the wafer; (e) removing the grinding tape; and (f) sawing the wafer to form a plurality of dice.
  • According to the sawing method of the invention, the protection layer still attaches to the wafer after the step of thinning the wafer, so that the protection layer can provide protection for the wafer. Therefore, the surfaces of the sawing lines will not peel when sawing the wafer. Also, a larger peeling area near the sawing lines can be avoided, and the active surface of the wafer is not damaged and scratched. Furthermore, the protection layer is removed after the wafer is sawed, so that the active surface of the dice will not be contaminated when sawing the wafer to form the dice.
    • BRIEF DESCRIPTION OF THE DRAWINGS
  • FIG. 1 shows the step for taping a grinding tape on a wafer according to a conventional method;
  • FIG. 2 shows the step for grinding the wafer according to the conventional method;
  • FIG. 3 shows the step for removing the grinding tape according to the conventional method;
  • FIG. 4 shows the step for sawing the wafer according to the conventional method;
  • FIG. 5 shows a wafer of the present invention;
  • FIG. 6 shows the step for coating a protection layer on the wafer according to the present invention;
  • FIG. 7 shows the step for taping a grinding tape on the wafer according to the present invention;
  • FIG. 8 shows the step for grinding the wafer according to the present invention;
  • FIG. 9 shows the step for removing the grinding tape according to the present invention;
  • FIG. 10 shows the step for sawing the wafer according to the present invention; and
  • FIG. 11 shows the step for removing the protection layer according to the present invention.
    •  DETAILED DESCRIPTION OF THE INVENTION
  • FIGS. 5 to 10 show a sawing method for a wafer according to the present invention. Referring to FIG. 5, firstly, a wafer 20 is provided. The wafer 20 has an active surface 201 and a back surface 202, and the active surface 201 has a plurality of sawing lines (not shown). Referring to FIG. 6, a protection layer 21 is coated on the active surface 201 and the sawing lines, and the protection layer 21 totally covers the active surface 201 and the sawing lines. In the embodiment, the protection layer 21 is coated on the active surface 201 and the sawing lines by using a spin-coating method. The protection layer 21 is an adhesive. In the embodiment, the adhesive is epoxy.
  • After the step of coating the protection layer 21 on the active surface 201 and on the sawing lines, a baking step for solidifying the protection layer 21 proceeds so as to protect the wafer 20. Since the protection layer 21 coated on the active surface 201 is liquid material, the protection layer 21 can totally cover the active surface 201 and the sawing lines. Furthermore, by utilizing the liquid characteristics of the protection layer 21, the protection layer 21 can tightly attach to the active surface 201 and the sawing lines, and form with a very flat surface.
  • Referring to FIG. 7, a grinding tape 22 is taped on a surface of the protection layer 21. The grinding tape 22 can provide more protection for the wafer 20. Referring to FIG. 8, the wafer 20 is thinned by using the grinding wheel of a grinding machine (not shown) to grind the back surface 202. When the wafer 20 is ground, the tightly attached protection layer 21 and the grinding tape 22 can provide a supporting force for the edge of the wafer 20. Therefore, the problems of die cracking can be avoided, and the active surface 201 of the wafer 20 will not be damaged. Referring to FIG. 9, the grinding tape 22 is removed. The wafer 20 is then sawed by using cutting tools along the sawing lines on the active surface 201 to form a plurality of dice 23, as shown in FIG. 10. Finally, after the step of sawing the wafer 20, the protection layer 21 may further be removed by using a solvent, as shown in FIG. 11.
  • According to the sawing method of the invention, the protection layer 21 still attaches to the wafer 20 after the step of thinning the wafer 20, so that the protection layer 21 can provide protection for the wafer 20. Therefore, the surfaces of the sawing lines will not peel when sawing the wafer 20. Also, a larger peeling area near the sawing lines can be avoided, and the active surface 201 of the wafer 20 is not damaged and scratched. Furthermore, the protection layer 21 is removed after the wafer 20 is sawed, so that the active surface 201 of the dice 23 will not be contaminated when sawing the wafer 20 to form the dice 23.
  • While the embodiment of the present invention has been illustrated and described, various modifications and improvements can be made by those skilled in the art. The embodiments of the present invention are therefore described in an illustrative but not restrictive sense. It is intended that the present invention may not be limited to the particular forms as illustrated, and that all modifications that maintain the spirit and scope of the present invention are within the scope as defined in the appended claims.

Claims (7)

1. A sawing method for a wafer, comprising the following steps of:
(a) providing a wafer, the wafer having an active surface and a back surface, the active surface having a plurality of sawing lines;
(b) coating a protection layer on the active surface and the sawing lines;
(c) taping a grinding tape on a surface of the protection layer;
(d) grinding the back surface of the wafer to thin the wafer;
(e) removing the grinding tape; and
(f) sawing the wafer to form a plurality of dice.
2. The sawing method according to claim 1, wherein the protection layer is coated on the active surface of the wafer by using a spin-coating method in step (b).
3. The sawing method according to claim 1, wherein the protection layer is an adhesive.
4. The sawing method according to claim 3, wherein the adhesive is epoxy.
5. The sawing method according to claim 1, further comprising a baking step for solidifying the protection layer after step (b).
6. The sawing method according to claim 1, further comprising a step for removing the protection layer after step (f).
7. The sawing method according to claim 6, wherein the protection layer is removed by using a solvent.
US11/785,710 2006-08-18 2007-04-19 Sawing method for a wafer Abandoned US20080045124A1 (en)

Applications Claiming Priority (2)

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TW095130525 2006-08-18
TW095130525A TWI317973B (en) 2006-08-18 2006-08-18 Sawing method for a wafer

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104425234A (en) * 2013-08-29 2015-03-18 三星钻石工业股份有限公司 Disjunction method of semiconductor wafer

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105097431A (en) * 2014-05-09 2015-11-25 中芯国际集成电路制造(上海)有限公司 Wafer front protecting method

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5776799A (en) * 1996-11-08 1998-07-07 Samsung Electronics Co., Ltd. Lead-on-chip type semiconductor chip package using an adhesive deposited on chip active surfaces at a wafer level and method for manufacturing same
US6551438B1 (en) * 1999-10-21 2003-04-22 Tdk Corporation Method of manufacturing magnetic head slider, method of fixing row bars, and curing agent
US7307340B2 (en) * 2003-12-05 2007-12-11 Samsung Electronics Co., Ltd. Wafer-level electronic modules with integral connector contacts

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5776799A (en) * 1996-11-08 1998-07-07 Samsung Electronics Co., Ltd. Lead-on-chip type semiconductor chip package using an adhesive deposited on chip active surfaces at a wafer level and method for manufacturing same
US6551438B1 (en) * 1999-10-21 2003-04-22 Tdk Corporation Method of manufacturing magnetic head slider, method of fixing row bars, and curing agent
US7307340B2 (en) * 2003-12-05 2007-12-11 Samsung Electronics Co., Ltd. Wafer-level electronic modules with integral connector contacts

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104425234A (en) * 2013-08-29 2015-03-18 三星钻石工业股份有限公司 Disjunction method of semiconductor wafer

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Publication number Publication date
TW200811936A (en) 2008-03-01
TWI317973B (en) 2009-12-01

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Owner name: ADVANCED SEMICONDUCTOR ENGINEERING, INC., TAIWAN

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:CHU, FU-TANG;CHUNG, CHI-YUAM;TENG, JI-PING;REEL/FRAME:019272/0488

Effective date: 20070412

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