US20060144687A1 - Apparatus for treating thin film and method of treating thin film - Google Patents
Apparatus for treating thin film and method of treating thin film Download PDFInfo
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- US20060144687A1 US20060144687A1 US11/286,602 US28660205A US2006144687A1 US 20060144687 A1 US20060144687 A1 US 20060144687A1 US 28660205 A US28660205 A US 28660205A US 2006144687 A1 US2006144687 A1 US 2006144687A1
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- energy source
- thin film
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
- C23C16/483—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using coherent light, UV to IR, e.g. lasers
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
- C23C16/047—Coating on selected surface areas, e.g. using masks using irradiation by energy or particles
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45517—Confinement of gases to vicinity of substrate
Definitions
- the present invention relates to an apparatus for treating a thin film and a method of treating a thin film.
- CTRs cathode-ray tubes
- LCD liquid crystal display
- PDPs plasma display panels
- ELDs electro-luminescence displays
- These flat panel displays have a light emitting layer or a light polarizing layer on at least one transparent substrate.
- an active matrix type flat panel display where a plurality of thin film transistors (TFTs) are arranged in a matrix manner, has become widely used due to high resolution and high ability of displaying moving images.
- TFTs thin film transistors
- the flat panel display includes multiple thin films. Accordingly, the flat panel display is fabricated through the repetition of a thin film-depositing process, a photolithography process and a thin film-etching process. Also, when a thin film pattern formed through such processes has defects such as an open circuit or a short circuit, a process for repairing the defects of the thin film pattern is conducted.
- a thin film-treating process such as a depositing process, an etching process and a repairing process is conducted in a vacuum chamber for thin film-treating.
- the vacuum chamber has a vacuum condition area.
- large sized substrates are problematic for the vacuum chamber.
- a size of the chamber also increases in accordance to a size of the substrate. Accordingly, the space occupied by the vacuum chamber increases.
- a large sized vacuum chamber is advantageous for treating a large area of a substrate but is disadvantageous for treating a small area of a substrate such as repairing a part of a substrate having defects.
- FIG. 1 is a cross-sectional view of a gas shield type thin film-treating apparatus according to the related art.
- a gas shield type thin film-treating apparatus uses laser-induced chemical vapor deposition.
- thin film treatment is conducted by photolysis using light to irradiate a part of a substrate 2 and a reaction gas supplied to the irradiated part of the substrate 2 under atmospheric pressure.
- the gas shield type apparatus includes a stage 10 where the substrate 2 is placed, a gas shield 30 over the stage 10 , and an energy source 50 over the gas shield 30 .
- the stage 10 moves up/down and left/right i.e., horizontally and vertically, by using an operating unit (not shown).
- the gas shield 30 has a retention space 32 , which is open up and down, disposed at a center portion of the gas shield 30 corresponding to the energy source 50 .
- the upper open portion of the retention space 32 is shielded by a transparent window 34 .
- a laser beam “L” irradiates a part of the substrate 2 through the transparent window 34 and the retention space 32 .
- a reaction gas supplied to the retention space 32 flows into the substrate 2 .
- a plurality of exhaust grooves 38 are disposed at a rear surface of the gas shield 30 facing the substrate 2 to exhaust the residual reaction gas on the substrate 2 .
- a gas exhaust path 40 is connected to the exhaust grooves 38 to exhaust the residual reaction gas outside.
- a gas supply path 36 is connected to the retention space 32 to supply the reaction gas. Both the energy source 50 and the gas shield 30 are fixed, and the laser beam “L” of the energy source is focused on a part of the substrate 2 .
- the substrate 2 is placed on the stage 10 , and the stage 10 moves to align the energy source 50 and the gas shield 30 with the substrate 2 . Then, the laser beam “L” from the energy source 50 is focused on the part of the substrate 2 , and the reaction gas is supplied to the retention space 32 and flows into a surface of the substrate 2 . The reaction gas is activated by the laser beam “L” at the focused part of the substrate 2 , and thus a thin film pattern having a dot shape is formed. Then, the stage 10 moves with the energy source 50 and the gas shield 30 fixed. Accordingly, a repair line as a thin film pattern having a line shape is formed by continuing to form the dot-shape thin film pattern. Therefore, an open-circuited line pattern is repaired with the repair line.
- a zapping process if necessary, is conducted prior to repairing the open-circuited line.
- density and intensity of the laser beam “L” are adjusted adequately and the laser beam “L” irradiates the substrate 2 without the reaction gas, and thus an insulating layer on the open-circuited line pattern is removed to expose the open-circuited portion of the line pattern.
- a short-circuited line pattern is separated.
- FIG. 2 is a cross-sectional view illustrating a flow of a reaction gas on a substrate in the related art gas shield type thin film-treating apparatus.
- the reaction gas supplied to the substrate 2 through the retention space 32 flows, which is shown as a flowing line “G”, according to moving of the stage 10 .
- friction between the reaction gas and the substrate 2 is generated due to moving of the substrate 2 to the right.
- the exhaust grooves 38 exhausting the reaction gas move relative to the substrate 2 . Accordingly, the reaction gas flows with the moving direction of the substrate 2 and is wasted. Therefore, sufficient reaction gas is not supplied to the focused part (focal point) “F” of the substrate 2 irradiated by the laser beam “L”.
- the stage moves, the space occupied by the gas shield type apparatus increases as a size of the flat panel display recently has increased. Also, a heavy burden is imposed on the operating unit to move the large-sized stage 10 .
- an apparatus for treating a thin film on a substrate includes a stage adapted to receive the substrate; a gas shield facing the stage and having a space; an energy source disposed to face the stage through the space; a first operating unit operative to move the gas shield; and a second operating unit operative to move the energy source.
- a method of treating a thin film on a substrate includes loading the substrate on a stage; moving the energy source to align the energy source with a part of the substrate to be treated through a space of a gas shield; and irradiating the part of the substrate with radiation from the energy source through the space of the gas shield while moving the energy source to treat the thin film.
- a method of manufacturing a substrate includes: loading the substrate, on which a thin film is formed, on a stage; moving an energy source and a gas shield such that the energy source faces a part of the substrate to be treated through a space of a gas shield; and repairing an open circuit and/or a short circuit in the thin film by irradiating the thin film with radiation from the energy source through the space of the gas shield while moving the energy source.
- FIG. 1 is a cross-sectional view of a gas shield type thin film-treating apparatus according to the related art
- FIG. 2 is a cross-sectional view illustrating a flow of a reaction gas on a substrate in the related art gas shield type thin film-treating apparatus
- FIG. 3 is a cross-sectional view of a gas shield type thin film-treating apparatus according to a first embodiment of the present invention
- FIG. 4 is a cross-sectional view of a gas shield type thin film-treating apparatus according to a second embodiment of the present invention.
- FIG. 5A is a cross-sectional view illustrating one example that the energy source only moves when forming the repair line using the gas shield type thin film-treating apparatus according to the embodiments of the present invention.
- FIG. 5B is a cross-sectional view illustrating another example that the energy source and the gas shield moves opposite to each other when forming the repair line using the gas shield type thin film-treating apparatus according to the embodiments of the present invention.
- FIG. 3 is a cross-sectional view of a gas shield type thin film-treating apparatus according to a first embodiment of the present invention.
- the thin film-treating apparatus according to the embodiment of the present invention is applicable not only to flat panel displays but also to devices including thin films such as semiconductor devices.
- the process of treating a thin film includes processes related to forming a thin film on a substrate such as depositing, etching, repairing and the like.
- the thin film-treating apparatus includes a stage 110 where a substrate 102 is placed, a gas shield 130 disposed over and facing the substrate 102 , and an energy source 150 over the gas shield 130 .
- the thin film-treating apparatus further includes first and second operating units 142 , 152 to move the gas shield 130 and the energy source 150 , respectively, up/down and left/right, i.e., horizontally and vertically, with respect to the substrate 102 . Accordingly, the gas shield 130 may move separately from the energy source 150 .
- the stage 110 may remain fixed, and the stage 110 may have a heater therein (not shown) to heat the substrate 102 .
- the gas shield 130 is spaced apart from the substrate 102 by several micrometers to several hundred micrometers.
- the gas shield 130 may be made of aluminum (Al) and have a circle-banded shape or a polygon-banded shape.
- a retention space 132 is disposed at a center portion of the gas shield 130 .
- the retention space 132 may have a width of about 2 mm to 5 mm.
- the retention space 132 is open up and down, and upper open portion of the retention space 132 is shielded by a transparent window 134 .
- the transparent window 134 may be made of quartz.
- a plurality of exhaust grooves 138 is disposed in a rear surface of the gas shield 130 .
- the gas shield 130 has supply members to supply a reaction gas and exhaust members to exhaust the residual reaction gas.
- a gas supply path 136 is formed in the gas shield 130 , and the gas supply path 136 connects a gas supply system 162 and a retention space 132 .
- a gas exhaust path 140 is formed in the gas shield 130 , a plurality of exhaust grooves 138 is formed on a rear surface facing the substrate 102 , and the gas exhaust path 140 connects the exhaust grooves 138 and a gas exhaust system 164 .
- the gas supply system 162 may use an Upstream Pressure Control (UPC) structure including a Mass Flow Controller (MFC), and the gas exhaust system 164 may use a vacuum pump. Accordingly, the reaction gas can be effectively supplied and exhausted by using the supply members and the exhaust members.
- UPC Upstream Pressure Control
- MFC Mass Flow Controller
- a laser beam “L” emitted from the energy source 150 irradiates a part of the substrate 102 through the retention space 132 .
- the retention space 132 provides the majority of the reaction gas therein to the focused part of the substrate 102 .
- the transparent window 134 prevents the reaction gas, which is generally poisonous, from leaking outside.
- a non-reflective plane lens may be used as the transparent window 134 .
- the energy source 150 moves separately from the gas shield 130 , distortion of a focal point of the laser beam “L” can be prevented due to the transparent window 134 using the non-reflective plane lens.
- the laser beam “L” is focused on the part of the substrate 102 through the transparent window 134 and the retention space 132 .
- the energy source 150 may emit ultraviolet (UV) radiation, radio frequency (RF) radiation, or u-wave radiation rather than, or in addition to, the laser beam “L”.
- the gas shield 130 and the energy source 150 are separately moved by the first and second operating units 142 , 152 .
- the gas shield 130 and the energy source 150 move independently from each other.
- one of the gas shield 130 and the energy source 150 may move dependent on the other.
- Such the dependency of the movement between the gas shield 130 and the energy source 150 is explained with reference to a second embodiment of the present invention.
- FIG. 4 is a cross-sectional view of a gas shield type thin film-treating apparatus according to a second embodiment of the present invention.
- the apparatus of the second embodiment is similar to the apparatus of the first embodiment, except for dependency structures of the movement between the gas shield and the energy source. Accordingly, detailed explanation of the similar parts to the first embodiment will be omitted.
- the gas shield 130 and the energy source 150 are connected through a connection frame 170 .
- a first operating unit 142 is connected to the connection frame 170 . Accordingly, the first operating unit 142 moves the gas shield 130 vertically and horizontally. Further, a second operating unit 152 moves not only the energy source 150 but also the connection frame 170 , the first operating unit 142 and the gas shield 130 connected to the energy source 150 , vertically and horizontally. Thus, movement of the gas shield 130 is dependent on movement of the energy source 150 .
- movement of the energy source 150 may be dependent on movement of the gas shield 130 , in which case the second operating unit 152 may be connected to the connection frame 170 and the first operating unit 142 may move the gas shield 130 , the connection frame 170 , the second operating unit 152 and the energy source 150 .
- an energy source 150 and gas shield 130 whose movements are dependent on one another may be effective when the gas shield 130 and the energy source 150 moves by a long distance beyond the retention space 132 .
- it may be effective that both the energy source 150 and the gas shield 130 are dependent on the second operating unit 152 to move.
- a minute movement of the energy source 150 and the gas shield 130 may be required.
- the gas shield 130 may move independently from the energy source 150 by using the first operating unit 142 .
- the above-explained apparatus can be used to treat a thin film.
- a process of forming a repair line for an open-circuited line pattern can be effectively conducted with the apparatus of the embodiments of the present invention.
- a process of separating a short-circuited line pattern by adjusting density and intensity of the laser beam without the reaction gas can be conducted.
- a zapping process can be conducted in which an insulating layer covering the open-circuited or short-circuited line is removed to expose the open-circuited or short-circuited line.
- the substrate 102 is placed on the stage 110 .
- a line pattern having defects such as a short circuit or open circuit, is formed previously.
- a zapping process is conducted to expose the defects of the line pattern. If the line pattern has an open-circuited portion, both ends of the open-circuited portion are exposed.
- both the gas shield 130 and the energy source 150 are aligned with the substrate 102 by using the first and second operating units 142 and 152 .
- this alignment is such that the focal point of the laser beam “L” is aligned with one end of the open-circuited portion. This end of the open-circuited portion is a starting point to form a repair line.
- the reaction gas After aligning the focal point of the laser beam “L”, the reaction gas is supplied to the retention space 132 , and at the same time, a laser beam “L” irradiates the end of the open-circuited portion on the substrate 102 . Accordingly, photolysis of the reaction gas is generated at the focal point, and thus a thin film pattern having a dot shape is formed. During this process, the residual reaction gas is exhausted through the exhaust grooves 138 .
- This process continues along the one end to the other end of the open-circuited portion by moving the focal point of the laser beam “L” along one end of the open-circuited portion to the other end of the open-circuited portion.
- the dot-shaped thin film patterns are continuously formed, and thus a repair line constituted by the continuous dot-shaped thin film patterns is formed.
- the gas shield 130 and the energy source 150 may be controlled by the first operating unit 142 .
- the energy source 150 and the gas shield 130 may move in various manners. A movement of the energy source 150 and the gas shield 130 is explained with reference to FIGS. 5A and 5B .
- FIG. 5A is a cross-sectional view illustrating one example in which only the energy source 150 moves when forming the repair line using the gas shield type thin film-treating apparatus according to the embodiments of the present invention
- FIG. 5B is a cross-sectional view illustrating another example in which the energy source 150 and the gas shield 130 move opposite to each other when forming the repair line using the gas shield type thin film-treating apparatus according to the embodiments of the present invention.
- the stage 110 and the substrate 102 are fixed, and the gas shield 130 also is fixed. Accordingly, the reaction gas remains static on the substrate 102 and does not flow horizontally. Thus, a sufficient amount of reaction gas remains on the substrate 102 below the retention space 132 . Further, a moving path of the energy source 150 is within the retention space 132 , and thus a moving path of the focal point “F” of the laser beam “L” is within the retention space 132 . Therefore, within the moving path of the focal point “F”, the reaction gas is sufficiently supplied. As a result, reliability of the repair line can increase.
- both the gas shield 130 and the energy source 150 move, however, the moving directions of the gas shield 130 and the energy source 150 are opposite to each other.
- a moving path of the energy source 150 of FIG. 5B is within the retention space 132 in a manner similar to the energy source of FIG. 5A . Accordingly, only when both ends of the open-circuited portion of the line pattern are below the retention space 132 does the gas shield 130 move opposite to the energy source 150 .
- the reaction gas supplied on the substrate 102 through the retention space 132 flows, which is shown as a flowing line “G”, opposite to a moving direction of the gas shield 130 .
- the reaction gas flows according to a moving path of the focal point “F” of the laser beam “L”. Therefore, within the moving path of the focal point “F”, the reaction gas is sufficiently supplied. As a result, reliability of the repair line can increase.
- repair is effective when the moving path of the focal point “F” is within the retention space 132 .
- this relationship has a sufficient margin since the retention space 132 has a width of about 2 mm to 5 mm and the repair line has a length of 20 micrometers ( ⁇ m) to 50 micrometers ( ⁇ m).
- the gas shield type apparatus since the gas shield and the energy source move rather than the stage, the gas shield type apparatus can be applied to a large sized substrate without using a large space. Further, since a stable and sufficient amount of reaction gas is supplied to the focal point of the laser beam due to movement of only the energy source or of both the energy source and the gas shield, reliability for thin film treatment can be obtained.
- the method of treating may correspond to a repairing process and the thin film may be formed on a large-sized substrate.
- the operating unit according to the present invention may include a motor portion and a controlling portion.
- the motor portion may include a motor that can minutely control movement.
- the motor portion thus can include motors such as a linear motor, a stepping motor or a servomotor.
Abstract
Description
- The present invention claims benefit of Korean Patent Application No. P2004-0116195, filed in Korea on Dec. 30, 2004, which is hereby incorporated by reference.
- The present invention relates to an apparatus for treating a thin film and a method of treating a thin film.
- Until recently, display devices have typically used cathode-ray tubes (CRTs). Presently, much effort is being expended to study and develop various types of flat panel displays, such as liquid crystal display (LCD) devices, plasma display panels (PDPs), field emission displays, and electro-luminescence displays (ELDs), as a substitute for CRTs.
- These flat panel displays have a light emitting layer or a light polarizing layer on at least one transparent substrate. Recently, an active matrix type flat panel display, where a plurality of thin film transistors (TFTs) are arranged in a matrix manner, has become widely used due to high resolution and high ability of displaying moving images.
- The flat panel display includes multiple thin films. Accordingly, the flat panel display is fabricated through the repetition of a thin film-depositing process, a photolithography process and a thin film-etching process. Also, when a thin film pattern formed through such processes has defects such as an open circuit or a short circuit, a process for repairing the defects of the thin film pattern is conducted.
- A thin film-treating process such as a depositing process, an etching process and a repairing process is conducted in a vacuum chamber for thin film-treating. The vacuum chamber has a vacuum condition area. However, large sized substrates are problematic for the vacuum chamber. In other words, as a size of the flat panel display recently has increased, a size of the chamber also increases in accordance to a size of the substrate. Accordingly, the space occupied by the vacuum chamber increases. Further, a large sized vacuum chamber is advantageous for treating a large area of a substrate but is disadvantageous for treating a small area of a substrate such as repairing a part of a substrate having defects.
- To solve these problems, instead of the vacuum chamber requiring a large-sized vacuum condition area, a gas shield type thin film-treating apparatus for treating a part of a substrate having defects such as a short circuit or an open circuit has been suggested.
-
FIG. 1 is a cross-sectional view of a gas shield type thin film-treating apparatus according to the related art. - As shown in
FIG. 1 , a gas shield type thin film-treating apparatus uses laser-induced chemical vapor deposition. In other words, thin film treatment is conducted by photolysis using light to irradiate a part of asubstrate 2 and a reaction gas supplied to the irradiated part of thesubstrate 2 under atmospheric pressure. - The gas shield type apparatus includes a
stage 10 where thesubstrate 2 is placed, agas shield 30 over thestage 10, and anenergy source 50 over thegas shield 30. - The
stage 10 moves up/down and left/right i.e., horizontally and vertically, by using an operating unit (not shown). Thegas shield 30 has aretention space 32, which is open up and down, disposed at a center portion of thegas shield 30 corresponding to theenergy source 50. The upper open portion of theretention space 32 is shielded by atransparent window 34. A laser beam “L” irradiates a part of thesubstrate 2 through thetransparent window 34 and theretention space 32. A reaction gas supplied to theretention space 32 flows into thesubstrate 2. A plurality ofexhaust grooves 38 are disposed at a rear surface of thegas shield 30 facing thesubstrate 2 to exhaust the residual reaction gas on thesubstrate 2. Agas exhaust path 40 is connected to theexhaust grooves 38 to exhaust the residual reaction gas outside. Agas supply path 36 is connected to theretention space 32 to supply the reaction gas. Both theenergy source 50 and thegas shield 30 are fixed, and the laser beam “L” of the energy source is focused on a part of thesubstrate 2. - The
substrate 2 is placed on thestage 10, and thestage 10 moves to align theenergy source 50 and thegas shield 30 with thesubstrate 2. Then, the laser beam “L” from theenergy source 50 is focused on the part of thesubstrate 2, and the reaction gas is supplied to theretention space 32 and flows into a surface of thesubstrate 2. The reaction gas is activated by the laser beam “L” at the focused part of thesubstrate 2, and thus a thin film pattern having a dot shape is formed. Then, thestage 10 moves with theenergy source 50 and thegas shield 30 fixed. Accordingly, a repair line as a thin film pattern having a line shape is formed by continuing to form the dot-shape thin film pattern. Therefore, an open-circuited line pattern is repaired with the repair line. With the gas shield type apparatus, a zapping process, if necessary, is conducted prior to repairing the open-circuited line. In other words, density and intensity of the laser beam “L” are adjusted adequately and the laser beam “L” irradiates thesubstrate 2 without the reaction gas, and thus an insulating layer on the open-circuited line pattern is removed to expose the open-circuited portion of the line pattern. In a similar manner, a short-circuited line pattern is separated. - In the related art gas shield type apparatus, enough reaction gas is supplied to the focused part of the
substrate 2 to conduct thin film treatment. However, since thin film treatment is conducted under atmospheric pressure, a large amount of reaction gas is wasted. Also, since thestage 10 moves to conduct thin film treatment, a sufficient amount of the reaction gas is sometimes not supplied to the focused part of thesubstrate 2. -
FIG. 2 is a cross-sectional view illustrating a flow of a reaction gas on a substrate in the related art gas shield type thin film-treating apparatus. - As shown in
FIG. 2 , the reaction gas supplied to thesubstrate 2 through theretention space 32 flows, which is shown as a flowing line “G”, according to moving of thestage 10. In other words, friction between the reaction gas and thesubstrate 2 is generated due to moving of thesubstrate 2 to the right. Also, theexhaust grooves 38 exhausting the reaction gas move relative to thesubstrate 2. Accordingly, the reaction gas flows with the moving direction of thesubstrate 2 and is wasted. Therefore, sufficient reaction gas is not supplied to the focused part (focal point) “F” of thesubstrate 2 irradiated by the laser beam “L”. - Further, when a moving speed of the
stage 10 increases, a flow of the reaction gas further increases. Accordingly, the reaction gas does not remain and flows away from the focused part “F” of thesubstrate 2. Therefore, reliability of thin film treatment is reduced. - As a result, a moving speed of the
stage 10 is limited for thin film treatment, and thus productivity and efficiency of the apparatus are reduced. - Further, since the stage moves, the space occupied by the gas shield type apparatus increases as a size of the flat panel display recently has increased. Also, a heavy burden is imposed on the operating unit to move the large-sized
stage 10. - By way of introduction only, an apparatus for treating a thin film on a substrate includes a stage adapted to receive the substrate; a gas shield facing the stage and having a space; an energy source disposed to face the stage through the space; a first operating unit operative to move the gas shield; and a second operating unit operative to move the energy source.
- In another aspect, a method of treating a thin film on a substrate includes loading the substrate on a stage; moving the energy source to align the energy source with a part of the substrate to be treated through a space of a gas shield; and irradiating the part of the substrate with radiation from the energy source through the space of the gas shield while moving the energy source to treat the thin film.
- In another aspect, a method of manufacturing a substrate includes: loading the substrate, on which a thin film is formed, on a stage; moving an energy source and a gas shield such that the energy source faces a part of the substrate to be treated through a space of a gas shield; and repairing an open circuit and/or a short circuit in the thin film by irradiating the thin film with radiation from the energy source through the space of the gas shield while moving the energy source.
- It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory and are intended to provide further explanation of the invention as claimed.
- The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the principles of the invention. In the drawings:
-
FIG. 1 is a cross-sectional view of a gas shield type thin film-treating apparatus according to the related art; -
FIG. 2 is a cross-sectional view illustrating a flow of a reaction gas on a substrate in the related art gas shield type thin film-treating apparatus; -
FIG. 3 is a cross-sectional view of a gas shield type thin film-treating apparatus according to a first embodiment of the present invention; -
FIG. 4 is a cross-sectional view of a gas shield type thin film-treating apparatus according to a second embodiment of the present invention; -
FIG. 5A is a cross-sectional view illustrating one example that the energy source only moves when forming the repair line using the gas shield type thin film-treating apparatus according to the embodiments of the present invention; and -
FIG. 5B is a cross-sectional view illustrating another example that the energy source and the gas shield moves opposite to each other when forming the repair line using the gas shield type thin film-treating apparatus according to the embodiments of the present invention. - Reference will now be made in detail to the illustrated embodiments of the present invention, which are illustrated in the accompanying drawings.
-
FIG. 3 is a cross-sectional view of a gas shield type thin film-treating apparatus according to a first embodiment of the present invention. The thin film-treating apparatus according to the embodiment of the present invention is applicable not only to flat panel displays but also to devices including thin films such as semiconductor devices. The process of treating a thin film includes processes related to forming a thin film on a substrate such as depositing, etching, repairing and the like. - As shown in
FIG. 3 , the thin film-treating apparatus includes astage 110 where asubstrate 102 is placed, agas shield 130 disposed over and facing thesubstrate 102, and anenergy source 150 over thegas shield 130. The thin film-treating apparatus further includes first andsecond operating units gas shield 130 and theenergy source 150, respectively, up/down and left/right, i.e., horizontally and vertically, with respect to thesubstrate 102. Accordingly, thegas shield 130 may move separately from theenergy source 150. - The
stage 110 may remain fixed, and thestage 110 may have a heater therein (not shown) to heat thesubstrate 102. Thegas shield 130 is spaced apart from thesubstrate 102 by several micrometers to several hundred micrometers. Thegas shield 130 may be made of aluminum (Al) and have a circle-banded shape or a polygon-banded shape. Aretention space 132 is disposed at a center portion of thegas shield 130. Theretention space 132 may have a width of about 2 mm to 5 mm. Theretention space 132 is open up and down, and upper open portion of theretention space 132 is shielded by atransparent window 134. Thetransparent window 134 may be made of quartz. A plurality ofexhaust grooves 138 is disposed in a rear surface of thegas shield 130. - The
gas shield 130 has supply members to supply a reaction gas and exhaust members to exhaust the residual reaction gas. In other words, to supply the reaction gas, agas supply path 136 is formed in thegas shield 130, and thegas supply path 136 connects agas supply system 162 and aretention space 132. To exhaust the residual reaction gas, agas exhaust path 140 is formed in thegas shield 130, a plurality ofexhaust grooves 138 is formed on a rear surface facing thesubstrate 102, and thegas exhaust path 140 connects theexhaust grooves 138 and agas exhaust system 164. Thegas supply system 162 may use an Upstream Pressure Control (UPC) structure including a Mass Flow Controller (MFC), and thegas exhaust system 164 may use a vacuum pump. Accordingly, the reaction gas can be effectively supplied and exhausted by using the supply members and the exhaust members. - A laser beam “L” emitted from the
energy source 150 irradiates a part of thesubstrate 102 through theretention space 132. Theretention space 132 provides the majority of the reaction gas therein to the focused part of thesubstrate 102. Thetransparent window 134 prevents the reaction gas, which is generally poisonous, from leaking outside. - As the
transparent window 134, a non-reflective plane lens may be used. In other words, when theenergy source 150 moves separately from thegas shield 130, distortion of a focal point of the laser beam “L” can be prevented due to thetransparent window 134 using the non-reflective plane lens. - The laser beam “L” is focused on the part of the
substrate 102 through thetransparent window 134 and theretention space 132. Theenergy source 150 may emit ultraviolet (UV) radiation, radio frequency (RF) radiation, or u-wave radiation rather than, or in addition to, the laser beam “L”. - In the above-explained first embodiment, the
gas shield 130 and theenergy source 150 are separately moved by the first andsecond operating units gas shield 130 and theenergy source 150 move independently from each other. Meanwhile, one of thegas shield 130 and theenergy source 150 may move dependent on the other. Such the dependency of the movement between thegas shield 130 and theenergy source 150 is explained with reference to a second embodiment of the present invention. -
FIG. 4 is a cross-sectional view of a gas shield type thin film-treating apparatus according to a second embodiment of the present invention. The apparatus of the second embodiment is similar to the apparatus of the first embodiment, except for dependency structures of the movement between the gas shield and the energy source. Accordingly, detailed explanation of the similar parts to the first embodiment will be omitted. - As shown in
FIG. 4 , thegas shield 130 and theenergy source 150 are connected through aconnection frame 170. Afirst operating unit 142 is connected to theconnection frame 170. Accordingly, thefirst operating unit 142 moves thegas shield 130 vertically and horizontally. Further, asecond operating unit 152 moves not only theenergy source 150 but also theconnection frame 170, thefirst operating unit 142 and thegas shield 130 connected to theenergy source 150, vertically and horizontally. Thus, movement of thegas shield 130 is dependent on movement of theenergy source 150. In addition, movement of theenergy source 150 may be dependent on movement of thegas shield 130, in which case thesecond operating unit 152 may be connected to theconnection frame 170 and thefirst operating unit 142 may move thegas shield 130, theconnection frame 170, thesecond operating unit 152 and theenergy source 150. - Using an
energy source 150 andgas shield 130 whose movements are dependent on one another may be effective when thegas shield 130 and theenergy source 150 moves by a long distance beyond theretention space 132. In other words, for movement between defects of a line pattern, it may be effective that both theenergy source 150 and thegas shield 130 are dependent on thesecond operating unit 152 to move. To the contrary, to repair a defect of the line pattern, a minute movement of theenergy source 150 and thegas shield 130 may be required. In this case, thegas shield 130 may move independently from theenergy source 150 by using thefirst operating unit 142. - The above-explained apparatus according to the embodiments of the present invention can be used to treat a thin film. In other words, a process of forming a repair line for an open-circuited line pattern can be effectively conducted with the apparatus of the embodiments of the present invention. Also, a process of separating a short-circuited line pattern by adjusting density and intensity of the laser beam without the reaction gas can be conducted. Further, before repairing the open-circuited or short-circuited line, a zapping process can be conducted in which an insulating layer covering the open-circuited or short-circuited line is removed to expose the open-circuited or short-circuited line.
- Hereinafter, a method of treating a thin film by using the apparatus according to the embodiments of the present invention is explained. In particular, forming a repair line is mainly explained.
- First, the
substrate 102 is placed on thestage 110. On thesubstrate 102, a line pattern having defects, such as a short circuit or open circuit, is formed previously. When an insulating layer is formed on the line pattern, a zapping process is conducted to expose the defects of the line pattern. If the line pattern has an open-circuited portion, both ends of the open-circuited portion are exposed. - Then, both the
gas shield 130 and theenergy source 150 are aligned with thesubstrate 102 by using the first andsecond operating units - After aligning the focal point of the laser beam “L”, the reaction gas is supplied to the
retention space 132, and at the same time, a laser beam “L” irradiates the end of the open-circuited portion on thesubstrate 102. Accordingly, photolysis of the reaction gas is generated at the focal point, and thus a thin film pattern having a dot shape is formed. During this process, the residual reaction gas is exhausted through theexhaust grooves 138. - This process continues along the one end to the other end of the open-circuited portion by moving the focal point of the laser beam “L” along one end of the open-circuited portion to the other end of the open-circuited portion. In this manner, the dot-shaped thin film patterns are continuously formed, and thus a repair line constituted by the continuous dot-shaped thin film patterns is formed.
- If the
second operating unit 152 is not operational, thegas shield 130 and theenergy source 150 may be controlled by thefirst operating unit 142. - When forming the repair line, the
energy source 150 and thegas shield 130 may move in various manners. A movement of theenergy source 150 and thegas shield 130 is explained with reference toFIGS. 5A and 5B . -
FIG. 5A is a cross-sectional view illustrating one example in which only theenergy source 150 moves when forming the repair line using the gas shield type thin film-treating apparatus according to the embodiments of the present invention, andFIG. 5B is a cross-sectional view illustrating another example in which theenergy source 150 and thegas shield 130 move opposite to each other when forming the repair line using the gas shield type thin film-treating apparatus according to the embodiments of the present invention. - As shown in
FIG. 5A , thestage 110 and thesubstrate 102 are fixed, and thegas shield 130 also is fixed. Accordingly, the reaction gas remains static on thesubstrate 102 and does not flow horizontally. Thus, a sufficient amount of reaction gas remains on thesubstrate 102 below theretention space 132. Further, a moving path of theenergy source 150 is within theretention space 132, and thus a moving path of the focal point “F” of the laser beam “L” is within theretention space 132. Therefore, within the moving path of the focal point “F”, the reaction gas is sufficiently supplied. As a result, reliability of the repair line can increase. - As shown in
FIG. 5B , both thegas shield 130 and theenergy source 150 move, however, the moving directions of thegas shield 130 and theenergy source 150 are opposite to each other. A moving path of theenergy source 150 ofFIG. 5B is within theretention space 132 in a manner similar to the energy source ofFIG. 5A . Accordingly, only when both ends of the open-circuited portion of the line pattern are below theretention space 132 does thegas shield 130 move opposite to theenergy source 150. When thegas shield 130 moves opposite to theenergy source 150, the reaction gas supplied on thesubstrate 102 through theretention space 132 flows, which is shown as a flowing line “G”, opposite to a moving direction of thegas shield 130. In other words, the reaction gas flows according to a moving path of the focal point “F” of the laser beam “L”. Therefore, within the moving path of the focal point “F”, the reaction gas is sufficiently supplied. As a result, reliability of the repair line can increase. - Regardless of whether only the
energy source 150 moves or both theenergy source 150 and thegas shield 130 move, repair is effective when the moving path of the focal point “F” is within theretention space 132. In general, this relationship has a sufficient margin since theretention space 132 has a width of about 2 mm to 5 mm and the repair line has a length of 20 micrometers (μm) to 50 micrometers (μm). - As explained above, in the gas shield type thin film-treating apparatus according to the embodiments of the present invention, since the gas shield and the energy source move rather than the stage, the gas shield type apparatus can be applied to a large sized substrate without using a large space. Further, since a stable and sufficient amount of reaction gas is supplied to the focal point of the laser beam due to movement of only the energy source or of both the energy source and the gas shield, reliability for thin film treatment can be obtained.
- Accordingly, the method of treating may correspond to a repairing process and the thin film may be formed on a large-sized substrate.
- Furthermore, the operating unit according to the present invention may include a motor portion and a controlling portion. The motor portion may include a motor that can minutely control movement. The motor portion thus can include motors such as a linear motor, a stepping motor or a servomotor.
- It will be apparent to those skilled in the art that various modifications and variations can be made in the apparatus for treating the thin film and the method of treating the thin film of the present invention without departing from the spirit or scope of the invention. For instance, the present invention may also be applied to other display devices. Thus, it is intended that the present invention cover the modifications and variations of this invention provided they come within the scope of the appended claims and their equivalents.
Claims (40)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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KR2004-0116195 | 2004-12-30 | ||
KR1020040116195A KR20060077363A (en) | 2004-12-30 | 2004-12-30 | Atmospheric thin film treatment apparatus and thin film treatment method for flat panel display device |
Publications (2)
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US20060144687A1 true US20060144687A1 (en) | 2006-07-06 |
US9200369B2 US9200369B2 (en) | 2015-12-01 |
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US11/286,602 Active 2026-11-05 US9200369B2 (en) | 2004-12-30 | 2005-11-23 | Apparatus for treating thin film and method of treating thin film |
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US (1) | US9200369B2 (en) |
KR (1) | KR20060077363A (en) |
CN (1) | CN1796599A (en) |
TW (1) | TWI279855B (en) |
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KR100824964B1 (en) * | 2006-12-26 | 2008-04-28 | 주식회사 코윈디에스티 | Apparatus and method for forming thin metal film using laser |
US9111729B2 (en) * | 2009-12-03 | 2015-08-18 | Lam Research Corporation | Small plasma chamber systems and methods |
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US4801352A (en) * | 1986-12-30 | 1989-01-31 | Image Micro Systems, Inc. | Flowing gas seal enclosure for processing workpiece surface with controlled gas environment and intense laser irradiation |
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US6336975B1 (en) * | 1999-03-24 | 2002-01-08 | Nec Corporation | Thin film forming equipment and method |
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US6764386B2 (en) * | 2002-01-11 | 2004-07-20 | Applied Materials, Inc. | Air bearing-sealed micro-processing chamber |
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JP3175731B2 (en) * | 1999-05-18 | 2001-06-11 | 日本電気株式会社 | Laser CVD equipment |
-
2004
- 2004-12-30 KR KR1020040116195A patent/KR20060077363A/en not_active Application Discontinuation
-
2005
- 2005-10-17 CN CNA2005101090627A patent/CN1796599A/en active Pending
- 2005-11-23 US US11/286,602 patent/US9200369B2/en active Active
- 2005-11-30 TW TW094142137A patent/TWI279855B/en active
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US4778693A (en) * | 1986-10-17 | 1988-10-18 | Quantronix Corporation | Photolithographic mask repair system |
US4801352A (en) * | 1986-12-30 | 1989-01-31 | Image Micro Systems, Inc. | Flowing gas seal enclosure for processing workpiece surface with controlled gas environment and intense laser irradiation |
US5014646A (en) * | 1988-03-25 | 1991-05-14 | Matsushita Electric Industrial Co., Ltd. | Method and apparatus for writing oxide film |
US5103102A (en) * | 1989-02-24 | 1992-04-07 | Micrion Corporation | Localized vacuum apparatus and method |
US5385633A (en) * | 1990-03-29 | 1995-01-31 | The United States Of America As Represented By The Secretary Of The Navy | Method for laser-assisted silicon etching using halocarbon ambients |
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US6764386B2 (en) * | 2002-01-11 | 2004-07-20 | Applied Materials, Inc. | Air bearing-sealed micro-processing chamber |
Also Published As
Publication number | Publication date |
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CN1796599A (en) | 2006-07-05 |
US9200369B2 (en) | 2015-12-01 |
TW200629391A (en) | 2006-08-16 |
TWI279855B (en) | 2007-04-21 |
KR20060077363A (en) | 2006-07-05 |
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