US20020081465A1 - Sputtering targets and method for the preparation thereof - Google Patents

Sputtering targets and method for the preparation thereof Download PDF

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US20020081465A1
US20020081465A1 US09/966,636 US96663601A US2002081465A1 US 20020081465 A1 US20020081465 A1 US 20020081465A1 US 96663601 A US96663601 A US 96663601A US 2002081465 A1 US2002081465 A1 US 2002081465A1
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titanium dioxide
target
plasma
argon
sputtering
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Johan Vanderstraeten
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
    • C03C17/23—Oxides
    • C03C17/245—Oxides by deposition from the vapour phase
    • C03C17/2456—Coating containing TiO2
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/04—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material
    • C23C4/10—Oxides, borides, carbides, nitrides or silicides; Mixtures thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/04—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material
    • C23C4/10—Oxides, borides, carbides, nitrides or silicides; Mixtures thereof
    • C23C4/11—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/12—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the method of spraying
    • C23C4/134—Plasma spraying
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00—Coatings on glass
    • C03C2217/20—Materials for coating a single layer on glass
    • C03C2217/21—Oxides
    • C03C2217/212—TiO2
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2218/00—Methods for coating glass
    • C03C2218/10—Deposition methods
    • C03C2218/15—Deposition methods from the vapour phase
    • C03C2218/154—Deposition methods from the vapour phase by sputtering

Definitions

  • the present invention relates to improved sputtering targets and, in particular to sputtering targets of titanium dioxide, and to a method for the preparation thereof.
  • Sputtered coatings of various oxides e.g. silica
  • nitrides e.g. silicon nitride
  • optical coatings showing interesting properties on a number of substrates.
  • Known applications include low emissivity films on window glasses, cold mirrors on reflectors, enhanced mirrors for photocopiers and antireflective coatings on picture glass or TV screens.
  • These coatings are usually made of stacks of several different layers with different refractive indices, preferably of low and high refractive index, to produce optical filters.
  • refractive indices preferably of low and high refractive index
  • antireflective coatings it is preferred to combine two materials showing the highest and the lowest possible refractive indices. Such materials are titania and silica. Another advantage of these materials is their durability.
  • Titanium dioxide coatings have a high refractive index and can thus be used to provide coatings of a high refractive index or to provide the high refractive index coatings in optical stacks.
  • the existing process for producing titanium dioxide coatings comprises using titanium metal as the sputtering target and using oxygen as a component of the plasma gas. The titanium is thus converted to titanium dioxide during the sputtering process. Although satisfactory coatings of titanium dioxide can be produced, the rate of production is very slow and much slower than coating with silica.
  • niobium oxide As a substitute for titanium dioxide it has been suggested to use alternative materials such as niobium oxide. Whilst it is possible to coat a substrate with niobium oxide using a niobium metal target at slightly higher speeds than the equivalent process using titanium, niobium is very expensive.
  • titanium dioxide can be sputtered from a target comprising sub-stoichiometric titanium dioxide to provide coatings on a substrate either of sub-stoichiometric titanium dioxide, or titanium dioxide, depending upon the sputtering conditions.
  • the present invention provides a sputtering target which comprises sub-stoichiometric titanium dioxide, TiO x , where x is below 2.
  • Sub-stoichiometric titanium dioxide, TiO x , where x is below 2 and generally is in the range of from 1.55 to 1.95 is known in the art. It may be produced by the reduction of stoichiometric TiO 2 . It is a form of titanium dioxide which is conductive.
  • the sputtering target of the present invention may comprise sub-stoichiometric titanium dioxide, TiO x coated onto a target base.
  • a target base such as a backing tube or plate, for example a target base of an electrically conductive material, for example stainless steel or titanium metal.
  • the target may be of any type known in the art, for example a rotatable target or a flat magnetron target.
  • the sputtering target of the present invention may be prepared by plasma spraying titanium dioxide onto a target base. During the plasma spraying process, the titanium dioxide loses some oxygen atoms from its lattice and is converted into the sub-stoichiometric form.
  • the primary plasma gas used for the plasma spraying is preferably argon, with hydrogen as the secondary plasma gas.
  • the titanium dioxide which is subjected to plasma spraying preferably has a particle size in the range of from 1 to 60 micrometers. It is also important to cool the sputtering target during the plasma spraying in order to quench the titanium dioxide in sub-stoichiometric form and to improve the conductivity thereof. It also important to use a certain amount of hydrogen in the plasma gas in order to produce a high temperature plasma and to assist in the reduction.
  • the present invention also provides in another aspect a process for coating a substrate surface with titanium dioxide, which process comprises using as a sputtering target a target comprising sub-stoichiometric titanium dioxide, TiO x .
  • the sputtering from the target is preferably carried out using as the plasma gas argon, a mixture of argon and oxygen, a mixture of nitrogen and argon, or a mixture of nitrogen and oxygen. If the plasma gas does not contain oxygen, e.g. if pure argon is used, then the coating will comprise sub-stoichiometric titanium dioxide.
  • the coating is not completely transparent and possesses some conductivity.
  • the sub-stoichiometric form of titanium dioxide is converted into the transparent form which is stoichiometric or substantially stoichiometric.
  • the degree of transparency will depend upon the amount of oxygen contained in the plasma gas.
  • a preferred gas mixture to form transparent titanium dioxide as the coating comprises 70-90% by volume argon and 30-10% by volume of oxygen.
  • the substrate which is coated according to this process may comprise, for example, optical glass, the screen of a cathode ray tube, such as a TV screen, cold mirrors, low-emissivity glasses, architectural glasses, antireflective panels, flexible films or oxygen barrier films.
  • the coating process will be carried out under conditions such that the sub-stoichiometric titanium dioxide is converted into the stoichiometric form.
  • the present invention also provides a process for the preparation of sub-stoichiometric titanium dioxide, TiO x , where x is below 2 which process comprises subjecting titanium dioxide to a plasma flame.
  • the titanium dioxide is preferably sprayed through a plasma flame, for example a plasma flame using a mixture of argon and hydrogen as the plasma gas.
  • the main advantage of the present invention is that from the sub-stoichiometric titanium dioxide targets used in the present invention the rate of sputtering is increased by a factor of about ten as compared to sputtering from a titanium metal target, thus making the process industrially attractive.
  • a rotatable target comprising a tube of titanium metal of diameter 133 mm and length 800 mm was used to sputter titanium metal onto a glass plate placed at a distance of 18 cm from the target.
  • the sputtering was carried out at a power level of 35 kW (80A, 446V) under a pressure of 5 ⁇ 10 ⁇ 3 mBar of argon as the plasma gas.
  • Example 1 The procedure of Example 1 was repeated but substituting a mixture of 80% O 2 and 20% Ar as the primary plasma gas to replace the argon primary plasma gas of Example 1.
  • the sputtering was carried out at a power level of 45 kW (97A, 460V) under a pressure of 4.5 ⁇ 10 ⁇ 3 mBar.
  • a titanium metal target as described in Example 1 a titanium dioxide layer of thickness 1500 Angstroms was deposited on a glass plate place above the target in 31 ⁇ 2 minutes.
  • a rotatable target comprising a tube of stainless steel of diameter 133 mm and length 800 mm was coated with sub-stoichiometric titanium dioxide, TiO x , where x is below 2 as hereinbefore described by plasma spraying titanium dioxide onto the target using argon as the primary plasma gas and hydrogen as the secondary plasma gas. 72 liters (60% argon, 40% hydrogen) were used. The power level was 45 kW (455A, 96V).
  • This target was then used as a sputtering target in the manner as described in Example 1.
  • argon as the primary plasma gas the sputtering was carried out at a power level of 45 kW (97A, 460V) under a pressure of 5.4 ⁇ 10 ⁇ 3 mBar Ar.
  • a rotatable target prepared as described in Example 3 was used as a sputtering target in the manner as described in Example 3 using a mixture of 75% Ar and 25% O 2 as the plasma gas.
  • the sputtering was carried out at a power of 45 kW (95A, 473V) under a pressure of 5 ⁇ 10 ⁇ 3 mBar.
  • a clear transparent coating of stoichiometric titanium dioxide of thickness 12500 Angstroms was deposited on a glass plate placed above the target in 31 ⁇ 2 minutes. The sputtering proceeded smoothly without significant arcing.
  • a rotatable target was prepared as described in Example 3 by using pure argon (40 liters) at a power level of 34 kW (820A, 42V).
  • the electrical conductivity of the target was ten times inferior to that of Example 3. Sputtering from the target was difficult due to arcing. The process was not stable enough to produce samples.

Abstract

Sputtering targets comprising sub-stoichiometric titanium dioxide, TiOx, where x is below 2, are provided. The targets are preferably formed by plasma spraying so as to have an electrical resistivity of less than 0.5 ohm.cm.

Description

  • The present invention relates to improved sputtering targets and, in particular to sputtering targets of titanium dioxide, and to a method for the preparation thereof. [0001]
  • Sputtered coatings of various oxides (e.g. silica) and nitrides (e.g. silicon nitride) are used to form optical coatings showing interesting properties on a number of substrates. Known applications include low emissivity films on window glasses, cold mirrors on reflectors, enhanced mirrors for photocopiers and antireflective coatings on picture glass or TV screens. These coatings are usually made of stacks of several different layers with different refractive indices, preferably of low and high refractive index, to produce optical filters. For antireflective coatings it is preferred to combine two materials showing the highest and the lowest possible refractive indices. Such materials are titania and silica. Another advantage of these materials is their durability. [0002]
  • Titanium dioxide coatings have a high refractive index and can thus be used to provide coatings of a high refractive index or to provide the high refractive index coatings in optical stacks. The existing process for producing titanium dioxide coatings comprises using titanium metal as the sputtering target and using oxygen as a component of the plasma gas. The titanium is thus converted to titanium dioxide during the sputtering process. Although satisfactory coatings of titanium dioxide can be produced, the rate of production is very slow and much slower than coating with silica. [0003]
  • As a substitute for titanium dioxide it has been suggested to use alternative materials such as niobium oxide. Whilst it is possible to coat a substrate with niobium oxide using a niobium metal target at slightly higher speeds than the equivalent process using titanium, niobium is very expensive. [0004]
  • Thus, there is a need for an improved process for coating titanium dioxide onto substrate materials. We have now surprisingly discovered that titanium dioxide can be sputtered from a target comprising sub-stoichiometric titanium dioxide to provide coatings on a substrate either of sub-stoichiometric titanium dioxide, or titanium dioxide, depending upon the sputtering conditions. [0005]
  • Accordingly, the present invention provides a sputtering target which comprises sub-stoichiometric titanium dioxide, TiO[0006] x, where x is below 2. Sub-stoichiometric titanium dioxide, TiOx, where x is below 2 and generally is in the range of from 1.55 to 1.95 is known in the art. It may be produced by the reduction of stoichiometric TiO2. It is a form of titanium dioxide which is conductive.
  • The sputtering target of the present invention may comprise sub-stoichiometric titanium dioxide, TiO[0007] x coated onto a target base. such as a backing tube or plate, for example a target base of an electrically conductive material, for example stainless steel or titanium metal. The target may be of any type known in the art, for example a rotatable target or a flat magnetron target.
  • The sputtering target of the present invention may be prepared by plasma spraying titanium dioxide onto a target base. During the plasma spraying process, the titanium dioxide loses some oxygen atoms from its lattice and is converted into the sub-stoichiometric form. The primary plasma gas used for the plasma spraying is preferably argon, with hydrogen as the secondary plasma gas. The titanium dioxide which is subjected to plasma spraying preferably has a particle size in the range of from 1 to 60 micrometers. It is also important to cool the sputtering target during the plasma spraying in order to quench the titanium dioxide in sub-stoichiometric form and to improve the conductivity thereof. It also important to use a certain amount of hydrogen in the plasma gas in order to produce a high temperature plasma and to assist in the reduction. [0008]
  • The present invention also provides in another aspect a process for coating a substrate surface with titanium dioxide, which process comprises using as a sputtering target a target comprising sub-stoichiometric titanium dioxide, TiO[0009] x. The sputtering from the target is preferably carried out using as the plasma gas argon, a mixture of argon and oxygen, a mixture of nitrogen and argon, or a mixture of nitrogen and oxygen. If the plasma gas does not contain oxygen, e.g. if pure argon is used, then the coating will comprise sub-stoichiometric titanium dioxide. The coating is not completely transparent and possesses some conductivity. If, however, the plasma gas contains oxygen then the sub-stoichiometric form of titanium dioxide is converted into the transparent form which is stoichiometric or substantially stoichiometric. The degree of transparency will depend upon the amount of oxygen contained in the plasma gas. A preferred gas mixture to form transparent titanium dioxide as the coating comprises 70-90% by volume argon and 30-10% by volume of oxygen.
  • The substrate which is coated according to this process may comprise, for example, optical glass, the screen of a cathode ray tube, such as a TV screen, cold mirrors, low-emissivity glasses, architectural glasses, antireflective panels, flexible films or oxygen barrier films. In this case the coating process will be carried out under conditions such that the sub-stoichiometric titanium dioxide is converted into the stoichiometric form. [0010]
  • In a further aspect the present invention also provides a process for the preparation of sub-stoichiometric titanium dioxide, TiO[0011] x, where x is below 2 which process comprises subjecting titanium dioxide to a plasma flame. In carrying out this process the titanium dioxide is preferably sprayed through a plasma flame, for example a plasma flame using a mixture of argon and hydrogen as the plasma gas.
  • The main advantage of the present invention is that from the sub-stoichiometric titanium dioxide targets used in the present invention the rate of sputtering is increased by a factor of about ten as compared to sputtering from a titanium metal target, thus making the process industrially attractive. [0012]
  • The present invention will be further described with reference to the following Examples.[0013]
    • EXAMPLE 1 Comparative
  • A rotatable target comprising a tube of titanium metal of diameter 133 mm and length 800 mm was used to sputter titanium metal onto a glass plate placed at a distance of 18 cm from the target. The sputtering was carried out at a power level of 35 kW (80A, 446V) under a pressure of 5×10[0014] −3 mBar of argon as the plasma gas.
  • After 3½ minutes a layer of titanium metal 18000 Angstroms in thickness as measured by a profilometer had been deposited upon the glass plate. [0015]
    • EXAMPLE 2 Comparative
  • The procedure of Example 1 was repeated but substituting a mixture of 80% O[0016] 2 and 20% Ar as the primary plasma gas to replace the argon primary plasma gas of Example 1. The sputtering was carried out at a power level of 45 kW (97A, 460V) under a pressure of 4.5×10−3 mBar. Using a titanium metal target as described in Example 1 a titanium dioxide layer of thickness 1500 Angstroms was deposited on a glass plate place above the target in 3½ minutes.
    • EXAMPLE 3
  • A rotatable target comprising a tube of stainless steel of diameter 133 mm and length 800 mm was coated with sub-stoichiometric titanium dioxide, TiO[0017] x, where x is below 2 as hereinbefore described by plasma spraying titanium dioxide onto the target using argon as the primary plasma gas and hydrogen as the secondary plasma gas. 72 liters (60% argon, 40% hydrogen) were used. The power level was 45 kW (455A, 96V).
  • This target was then used as a sputtering target in the manner as described in Example 1. Using argon as the primary plasma gas the sputtering was carried out at a power level of 45 kW (97A, 460V) under a pressure of 5.4×10[0018] −3 mBar Ar. A dark blue semitransparent layer of sub-stoichiometric titanium dioxide, TiOx, of thickness 14000 Angstroms was deposited on a glass plate placed above the target in 3½ minutes. The sputtering proceeded smoothly without significant arcing.
    • EXAMPLE 4
  • A rotatable target prepared as described in Example [0019] 3 was used as a sputtering target in the manner as described in Example 3 using a mixture of 75% Ar and 25% O2 as the plasma gas. The sputtering was carried out at a power of 45 kW (95A, 473V) under a pressure of 5×10−3 mBar. A clear transparent coating of stoichiometric titanium dioxide of thickness 12500 Angstroms was deposited on a glass plate placed above the target in 3½ minutes. The sputtering proceeded smoothly without significant arcing.
    • EXAMPLE 5 Comparative
  • A rotatable target was prepared as described in Example 3 by using pure argon (40 liters) at a power level of 34 kW (820A, 42V). The electrical conductivity of the target was ten times inferior to that of Example 3. Sputtering from the target was difficult due to arcing. The process was not stable enough to produce samples. [0020]

Claims (15)

1. A sputtering target which comprises sub-stoichiometric titanium dioxide, TiOx, where x is below 2.
2. A sputtering target as claimed in claim 1 wherein the TiOx is coated onto an electrically conductive base.
3. A process for the preparation of a sputtering target as claimed in claim 1 or claim 2, which process comprises plasma spraying titanium dioxide, TiO2, onto a target base.
4. A process as claimed in claim 3 wherein the target base is cooled during the plasma spraying.
5. A process as claimed in claim 3 or claim 4 wherein the plasma spraying is carried out using argon as the plasma gas and hydrogen as the secondary plasma gas.
6. A process as claimed in any one of claims 3 to 5 wherein the target bas e is titanium.
7. A process as claimed in any one of claims 3 to 6 wherein the titanium dioxide which is plasma sprayed has particle size in the range of from 1 to 60 micrometers.
8. A process for coating a substrate surface with titanium dioxide, which process comprises the use as a sputtering target of a target as claimed in claim 1 or claim 2.
9. A process as claimed in claim 8 wherein the sputtering from the target is carried out using as the plasma gas argon, a mixture of argon and oxygen, a mixture or argon and nitrogen, or a mixture of nitrogen and oxygen.
10. A process as claimed in claim 9 wherein the plasma gas comprises 70 to 90% by volume argon and 30 to 10% by volume oxygen.
11. A process as claimed in any one of claims 8 to 10 wherein the substrate which is coated is optical glass, the screen of a cathode ray tube, a flexible film or an oxygen barrier film.
12. A substrate which has been coated by a process as claimed in any one of claims 8 to 11.
13. A process for the preparation of sub-stoichiometric titanium dioxide, TiOx, where x is below 2 which process comprises subjecting titanium dioxide to a plasma flame.
14. A process as claimed in claim 13 wherein titanium dioxide is sprayed through a plasma flame.
15. A process as claimed in claim 13 wherein the titanium dioxide is sprayed using a combustion flame.
US09/966,636 1996-01-05 2001-09-28 Sputtering targets and method for the preparation thereof Abandoned US20020081465A1 (en)

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US09/966,636 US20020081465A1 (en) 1996-01-05 2001-09-28 Sputtering targets and method for the preparation thereof

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
GB9600210.0 1996-01-05
GBGB9600210.0A GB9600210D0 (en) 1996-01-05 1996-01-05 Improved sputtering targets and method for the preparation thereof
PCT/EP1997/000020 WO1997025451A1 (en) 1996-01-05 1997-01-03 Sputtering targets and method for the preparation thereof
PCT/EP1997/000021 WO1997025450A1 (en) 1996-01-05 1997-01-03 Process for coating a substrate with titanium dioxide
EPPCT/EP97/00020 1997-01-03
EPPCT/EP97/00021 1997-01-03
US4468198A 1998-03-06 1998-03-06
US09/966,636 US20020081465A1 (en) 1996-01-05 2001-09-28 Sputtering targets and method for the preparation thereof

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US4468198A Continuation 1996-01-05 1998-03-06

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US20020081465A1 true US20020081465A1 (en) 2002-06-27

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US09/101,405 Expired - Lifetime US6461686B1 (en) 1996-01-05 1997-01-03 Sputtering targets and method for the preparation thereof
US09/589,098 Expired - Fee Related US6468402B1 (en) 1996-01-05 2000-06-08 Process for coating a substrate with titanium dioxide
US09/759,661 Abandoned US20010019738A1 (en) 1996-01-05 2001-01-12 Sputtering targets and method for the preparation thereof
US09/780,537 Abandoned US20010010288A1 (en) 1996-01-05 2001-02-12 Sputtering targets and method for the preparation thereof
US09/899,581 Abandoned US20020071971A1 (en) 1996-01-05 2001-07-05 Process for coating a substrate with titanium dioxide
US09/966,636 Abandoned US20020081465A1 (en) 1996-01-05 2001-09-28 Sputtering targets and method for the preparation thereof
US10/032,901 Abandoned US20020127349A1 (en) 1996-01-05 2001-10-19 Sputtering targets and method for the preparation thereof
US10/001,964 Expired - Fee Related US6511587B2 (en) 1996-01-05 2001-12-05 Sputtering targets and method for the preparation thereof
US10/008,949 Abandoned US20020125129A1 (en) 1996-01-05 2001-12-07 Sputtering targets and method for the preparation thereof
US10/417,413 Abandoned US20040069623A1 (en) 1996-01-05 2003-04-17 Sputtering targets and method for the preparation thereof
US11/346,372 Abandoned US20060249373A1 (en) 1996-01-05 2006-02-03 Sputtering targets and method for the preparation thereof

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US09/101,405 Expired - Lifetime US6461686B1 (en) 1996-01-05 1997-01-03 Sputtering targets and method for the preparation thereof
US09/589,098 Expired - Fee Related US6468402B1 (en) 1996-01-05 2000-06-08 Process for coating a substrate with titanium dioxide
US09/759,661 Abandoned US20010019738A1 (en) 1996-01-05 2001-01-12 Sputtering targets and method for the preparation thereof
US09/780,537 Abandoned US20010010288A1 (en) 1996-01-05 2001-02-12 Sputtering targets and method for the preparation thereof
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US10/008,949 Abandoned US20020125129A1 (en) 1996-01-05 2001-12-07 Sputtering targets and method for the preparation thereof
US10/417,413 Abandoned US20040069623A1 (en) 1996-01-05 2003-04-17 Sputtering targets and method for the preparation thereof
US11/346,372 Abandoned US20060249373A1 (en) 1996-01-05 2006-02-03 Sputtering targets and method for the preparation thereof

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080280078A1 (en) * 2006-06-30 2008-11-13 Krisko Annette J Carbon nanotube glazing technology

Families Citing this family (77)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6193856B1 (en) 1995-08-23 2001-02-27 Asahi Glass Company Ltd. Target and process for its production, and method for forming a film having a highly refractive index
GB9600210D0 (en) * 1996-01-05 1996-03-06 Vanderstraeten E Bvba Improved sputtering targets and method for the preparation thereof
US6292302B1 (en) 1998-11-03 2001-09-18 Cardinal Glass Industries, Inc. Heat-treatable dichroic mirrors
US6262850B1 (en) 1998-11-03 2001-07-17 Cardinal Glass Industries, Inc. Heat-treatable dichroic mirrors
DK1179516T3 (en) † 1998-12-21 2003-10-27 Cardinal Cg Co Dirt-resistant coating for glass surfaces
DE19958424C2 (en) * 1999-12-03 2002-05-29 Zentrum Fuer Material Und Umwe Atomization target for thin coating of large-area substrates and process for its production
CN1158403C (en) * 1999-12-23 2004-07-21 西南交通大学 Process for modifying surface of artificial organ
WO2001071055A1 (en) * 2000-03-22 2001-09-27 Nippon Sheet Glass Co., Ltd. Substrate with photocatalytic film and method for producing the same
JP3708429B2 (en) * 2000-11-30 2005-10-19 Ｈｏｙａ株式会社 Method for manufacturing vapor deposition composition, method for manufacturing optical component having vapor deposition composition and antireflection film
WO2002057508A2 (en) * 2001-01-17 2002-07-25 N.V. Bekaert S.A. Method for the production of sputtering targets
DE10140514A1 (en) 2001-08-17 2003-02-27 Heraeus Gmbh W C Sputtering target based on titanium dioxide
US20040240093A1 (en) * 2001-10-18 2004-12-02 Masato Yoshikawa Optical element and production method therefor, and band pass filter, near infrared cut filter and anti-reflection film
US20040115362A1 (en) * 2002-01-14 2004-06-17 Klause Hartig Photocatalytic sputtering targets and methods for the production and use thereof
US7067195B2 (en) 2002-04-29 2006-06-27 Cardinal Cg Company Coatings having low emissivity and low solar reflectance
KR20020077852A (en) * 2002-08-30 2002-10-14 주식회사 새롬원 Glass board members for anti-contamination
EP1583852A4 (en) * 2002-10-24 2008-03-05 Honeywell Int Inc Target designs and related methods for enhanced cooling and reduced deflection and deformation
US20040149307A1 (en) * 2002-12-18 2004-08-05 Klaus Hartig Reversible self-cleaning window assemblies and methods of use thereof
DE10320472A1 (en) * 2003-05-08 2004-12-02 Kolektor D.O.O. Plasma treatment for cleaning copper or nickel
US6915095B2 (en) * 2003-06-16 2005-07-05 Xerox Corporation Charging member having titanium oxide outer coating on grit blasted substrate
WO2005035822A1 (en) * 2003-10-07 2005-04-21 Deposition Sciences, Inc. Apparatus and process for high rate deposition of rutile titanium dioxide
DE10359508B4 (en) * 2003-12-18 2007-07-12 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Method and apparatus for magnetron sputtering
US7294404B2 (en) * 2003-12-22 2007-11-13 Cardinal Cg Company Graded photocatalytic coatings
JP5329081B2 (en) 2004-02-25 2013-10-30 エージーシー・フラット・グラス・ノース・アメリカ・インコーポレイテッド Thermally stabilized substoichiometric dielectrics
WO2005100013A1 (en) * 2004-04-06 2005-10-27 Teijin Dupont Films Japan Limited Antireflective film
EP1780299A4 (en) * 2004-06-29 2008-03-12 Pioneer Corp Sputtering target for thin film formation, dielectric thin film, optical disk, and process for producing the same
DE102004032635A1 (en) * 2004-07-06 2006-02-09 Gfe Metalle Und Materialien Gmbh Process for producing a titanium-suboxide-based coating material, correspondingly produced coating material and sputtering target provided therewith
JP2008505841A (en) 2004-07-12 2008-02-28 日本板硝子株式会社 Low maintenance coating
US20060033867A1 (en) * 2004-08-10 2006-02-16 Krisko Annette J LCD mirror system and method
JP5301833B2 (en) * 2004-10-04 2013-09-25 カーディナル・シージー・カンパニー Thin film coating and temporary protection technology, heat insulating glass unit, and related methods
US8092660B2 (en) 2004-12-03 2012-01-10 Cardinal Cg Company Methods and equipment for depositing hydrophilic coatings, and deposition technologies for thin films
US7923114B2 (en) 2004-12-03 2011-04-12 Cardinal Cg Company Hydrophilic coatings, methods for depositing hydrophilic coatings, and improved deposition technology for thin films
US7968216B2 (en) * 2005-01-08 2011-06-28 Toyoda Gosei Co., Ltd. Internal gear pump
US7442933B2 (en) * 2005-02-03 2008-10-28 Lin Alice L Bolometer having an amorphous titanium oxide layer with high resistance stability
FR2881757B1 (en) * 2005-02-08 2007-03-30 Saint Gobain THERMAL PROJECTION DEVELOPING METHOD OF TARGET BASED ON SILICON AND ZIRCONIUM
US8053048B2 (en) * 2005-04-25 2011-11-08 Baxter International Inc. Overpouch film and container and method of making same
DE102005029952B3 (en) * 2005-06-28 2007-01-11 Lanxess Deutschland Gmbh Leveling bracket
US7342716B2 (en) 2005-10-11 2008-03-11 Cardinal Cg Company Multiple cavity low-emissivity coatings
WO2007053586A2 (en) * 2005-11-01 2007-05-10 Cardinal Cg Company Reactive sputter deposition processes and equipment
US20070134500A1 (en) * 2005-12-14 2007-06-14 Klaus Hartig Sputtering targets and methods for depositing film containing tin and niobium
WO2007121211A2 (en) 2006-04-11 2007-10-25 Cardinal Cg Company Photocatalytic coatings having improved low-maintenance properties
WO2007124291A2 (en) 2006-04-19 2007-11-01 Cardinal Cg Company Opposed functional coatings having comparable single surface reflectances
DE102006027029B4 (en) * 2006-06-09 2010-09-30 W.C. Heraeus Gmbh Sputtering target with a sputtering material based on TiO2 and manufacturing process
US20070289869A1 (en) * 2006-06-15 2007-12-20 Zhifei Ye Large Area Sputtering Target
US20080011599A1 (en) 2006-07-12 2008-01-17 Brabender Dennis M Sputtering apparatus including novel target mounting and/or control
JP5261397B2 (en) * 2006-11-17 2013-08-14 サン−ゴバン グラス フランス Electrode for organic light emitting device, acid etching thereof, and organic light emitting device incorporating the same
US7807248B2 (en) * 2007-08-14 2010-10-05 Cardinal Cg Company Solar control low-emissivity coatings
US7622717B2 (en) * 2007-08-22 2009-11-24 Drs Sensors & Targeting Systems, Inc. Pixel structure having an umbrella type absorber with one or more recesses or channels sized to increase radiation absorption
JP5474796B2 (en) 2007-09-14 2014-04-16 日本板硝子株式会社 Low maintenance coating and method of manufacturing low maintenance coating
US7655274B2 (en) † 2007-11-05 2010-02-02 Guardian Industries Corp. Combustion deposition using aqueous precursor solutions to deposit titanium dioxide coatings
JP4993745B2 (en) * 2007-12-28 2012-08-08 株式会社アルバック Deposition equipment
US8324414B2 (en) 2009-12-23 2012-12-04 Battelle Energy Alliance, Llc Methods of forming single source precursors, methods of forming polymeric single source precursors, and single source precursors and intermediate products formed by such methods
US20130026535A1 (en) * 2011-07-26 2013-01-31 Battelle Energy Alliance, Llc Formation of integral composite photon absorber layer useful for photoactive devices and sensors
US8951446B2 (en) 2008-03-13 2015-02-10 Battelle Energy Alliance, Llc Hybrid particles and associated methods
US9371226B2 (en) 2011-02-02 2016-06-21 Battelle Energy Alliance, Llc Methods for forming particles
US8003070B2 (en) * 2008-03-13 2011-08-23 Battelle Energy Alliance, Llc Methods for forming particles from single source precursors
EP2116631A1 (en) * 2008-04-30 2009-11-11 Applied Materials, Inc. Sputter target
US20090272641A1 (en) * 2008-04-30 2009-11-05 Applied Materials, Inc. Sputter target, method for manufacturing a layer, particularly a tco (transparent conductive oxide) layer, and method for manufacturing a thin layer solar cell
JP5624712B2 (en) * 2008-09-01 2014-11-12 豊田合成株式会社 Manufacturing method of conductive transparent layer made of TiO2 and manufacturing method of semiconductor light emitting device using manufacturing method of said conductive transparent layer
JP2010231172A (en) * 2009-03-04 2010-10-14 Seiko Epson Corp Optical article and method for producing the same
FR2944293B1 (en) * 2009-04-10 2012-05-18 Saint Gobain Coating Solutions THERMAL PROJECTION DEVELOPING METHOD OF A TARGET
JP5588135B2 (en) * 2009-08-10 2014-09-10 ホーヤ レンズ マニュファクチャリング フィリピン インク Method for manufacturing optical article
JP2012032690A (en) 2010-08-02 2012-02-16 Seiko Epson Corp Optical article and manufacturing method thereof
DE102010048089B4 (en) * 2010-10-01 2016-09-01 Carl Zeiss Vision International Gmbh A method of producing a multilayer antistatic coating for a lens element
EP2723915A1 (en) 2011-06-27 2014-04-30 Soleras Ltd. Sputtering target
CN102286717B (en) * 2011-09-01 2013-07-03 基迈克材料科技（苏州）有限公司 Cylindrical large-area film coating target prepared through plasma spray coating and method
DE102011116062A1 (en) * 2011-10-18 2013-04-18 Sintertechnik Gmbh Ceramic product for use as a target
EP2613358A2 (en) * 2012-01-04 2013-07-10 OC Oerlikon Balzers AG Double layer antireflection coating for silicon based solar cell modules
DE102012112742A1 (en) * 2012-10-23 2014-04-24 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Highly absorbent layer system, method for producing the layer system and suitable sputtering target
DE102012022237A1 (en) 2012-11-14 2014-05-15 Heraeus Materials Technology Gmbh & Co. Kg Sputtering target with optimized usage properties
JP2016507004A (en) * 2013-02-05 2016-03-07 ソレラス・アドヴァンスト・コーティングス・ビーヴイビーエー (Ga) ZnSn oxide sputtering target
RU2013158730A (en) * 2013-12-27 2015-07-10 Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Самарский государственный аэрокосмический университет имени академика С.П. Королева" (национальный исследовательский университет)" (СГАУ) METHOD FOR PRODUCING A CATHODE TARGET FOR SPRAYING CERAMIC MATERIALS
JP5784849B2 (en) * 2015-01-21 2015-09-24 三井金属鉱業株式会社 Ceramic cylindrical sputtering target material and manufacturing method thereof
EP3541762B1 (en) 2016-11-17 2022-03-02 Cardinal CG Company Static-dissipative coating technology
ES2913535T3 (en) 2017-03-14 2022-06-02 Materion Advanced Mat Germany Gmbh Titanium oxide cylindrical sputtering target and method for manufacturing the same
DE102017118172A1 (en) * 2017-08-09 2019-02-14 Forplan AG Coating method, coating device for carrying out this method and coating system with such a coating device
CN110257790B (en) * 2019-07-29 2020-07-03 福建阿石创新材料股份有限公司 Aluminum oxide-TiOxTarget material and preparation method and application thereof
WO2023097583A1 (en) * 2021-12-01 2023-06-08 宁德时代新能源科技股份有限公司 Doped nickel oxide target material, and preparation method therefor and use thereof

Family Cites Families (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US232680A (en) 1880-09-28 Peters
US1231280A (en) 1916-11-16 1917-06-26 John F Metten Safety-valve.
US1438462A (en) 1919-04-17 1922-12-12 Skf Svenska Kullagerfab Ab Shock indicator
US1595061A (en) 1922-10-17 1926-08-03 Valerius Johann Electric cut-out
GB232680A (en) 1924-01-23 1925-04-23 Metal & Thermit Corp Improvements in the production of a form of titanium oxide
US3616445A (en) 1967-12-14 1971-10-26 Electronor Corp Titanium or tantalum base electrodes with applied titanium or tantalum oxide face activated with noble metals or noble metal oxides
DE2300422C3 (en) * 1973-01-05 1981-10-15 Hoechst Ag, 6000 Frankfurt Method of making an electrode
DE2405010C3 (en) 1974-02-02 1982-08-05 Sigri Elektrographit Gmbh, 8901 Meitingen Sintered electrode for electrochemical processes and methods of manufacturing the electrode
GB1595061A (en) * 1976-11-22 1981-08-05 Atomic Energy Authority Uk Electrically conductive layers produced by plasma spraying
DE2752875C2 (en) 1977-11-26 1986-05-15 Sigri GmbH, 8901 Meitingen Electrode for electrochemical processes and processes for their production
GB2028376B (en) 1978-08-23 1982-11-03 Ppg Industries Inc Electrically conductive coatings
US4216259A (en) 1979-01-02 1980-08-05 Bfg Glassgroup Heat reflecting pane and a method of producing it
US4422917A (en) * 1980-09-10 1983-12-27 Imi Marston Limited Electrode material, electrode and electrochemical cell
DE3039821A1 (en) * 1980-10-22 1982-06-03 Robert Bosch Gmbh, 7000 Stuttgart MULTI-LAYER SYSTEM FOR HEAT PROTECTION APPLICATION
US4336119A (en) 1981-01-29 1982-06-22 Ppg Industries, Inc. Method of and apparatus for control of reactive sputtering deposition
US4422916A (en) * 1981-02-12 1983-12-27 Shatterproof Glass Corporation Magnetron cathode sputtering apparatus
US5126218A (en) 1985-04-23 1992-06-30 Clarke Robert L Conductive ceramic substrate for batteries
JPS62161945A (en) * 1985-08-20 1987-07-17 Toyo Soda Mfg Co Ltd Production of ceramic sputtering target
JPS63178474A (en) 1987-01-19 1988-07-22 日立金属株式会社 Heater radiating long wavwlength infrared radiation
US4931213A (en) 1987-01-23 1990-06-05 Cass Richard B Electrically-conductive titanium suboxides
JPH0812302B2 (en) * 1987-11-02 1996-02-07 株式会社日立製作所 Method for producing titanium oxide thin film
US5618388A (en) * 1988-02-08 1997-04-08 Optical Coating Laboratory, Inc. Geometries and configurations for magnetron sputtering apparatus
US4861680A (en) 1988-02-11 1989-08-29 Southwall Technologies Bronze-grey glazing film and window made therefrom
US5354446A (en) * 1988-03-03 1994-10-11 Asahi Glass Company Ltd. Ceramic rotatable magnetron sputtering cathode target and process for its production
US5605609A (en) 1988-03-03 1997-02-25 Asahi Glass Company Ltd. Method for forming low refractive index film comprising silicon dioxide
US5196400A (en) * 1990-08-17 1993-03-23 At&T Bell Laboratories High temperature superconductor deposition by sputtering
US5105310A (en) 1990-10-11 1992-04-14 Viratec Thin Films, Inc. Dc reactively sputtered antireflection coatings
US5100527A (en) * 1990-10-18 1992-03-31 Viratec Thin Films, Inc. Rotating magnetron incorporating a removable cathode
US5616263A (en) * 1992-11-09 1997-04-01 American Roller Company Ceramic heater roller
US5589280A (en) 1993-02-05 1996-12-31 Southwall Technologies Inc. Metal on plastic films with adhesion-promoting layer
US5489369A (en) 1993-10-25 1996-02-06 Viratec Thin Films, Inc. Method and apparatus for thin film coating an article
GB9324069D0 (en) 1993-11-23 1994-01-12 Glaverbel A glazing unit and a method for its manufacture
US5451457A (en) 1993-12-20 1995-09-19 Libbey-Owens-Ford Co. Method and material for protecting glass surfaces
JPH07215074A (en) 1994-02-07 1995-08-15 Toyota Motor Corp Under-cover device for vehicle
JP3836163B2 (en) 1994-02-22 2006-10-18 旭硝子セラミックス株式会社 Method for forming high refractive index film
US5616225A (en) 1994-03-23 1997-04-01 The Boc Group, Inc. Use of multiple anodes in a magnetron for improving the uniformity of its plasma
JPH08134638A (en) 1994-11-04 1996-05-28 Asahi Glass Co Ltd Formation of titanium oxide film
US5593786A (en) 1994-11-09 1997-01-14 Libbey-Owens-Ford Company Self-adhering polyvinyl chloride safety glass interlayer
DE4441206C2 (en) 1994-11-19 1996-09-26 Leybold Ag Device for the suppression of rollovers in cathode sputtering devices
US5574079A (en) 1994-12-21 1996-11-12 Union Carbide Chemicals & Plastics Technology Corporation Method for the preparation of water-borne coating compositions using thermoplastic polyhydroxyether resins having narrow polydispersity
ES2124048T3 (en) 1995-07-08 1999-01-16 Leybold Ag CATHODIC SYSTEM FOR A SPRAY DEVICE ON AN OBJECT.
EP0840653B1 (en) 1995-07-24 2004-06-30 Southwall Technologies, Inc. Improved laminate structure and process for its production
US5743931A (en) 1995-08-14 1998-04-28 Libbey-Owens-Ford Co. Glass sheet conveying and bending apparatus
US6193856B1 (en) * 1995-08-23 2001-02-27 Asahi Glass Company Ltd. Target and process for its production, and method for forming a film having a highly refractive index
JPH09189801A (en) 1996-01-09 1997-07-22 Shin Etsu Chem Co Ltd Optical parts with heat resistant antireflection film
GB9600210D0 (en) * 1996-01-05 1996-03-06 Vanderstraeten E Bvba Improved sputtering targets and method for the preparation thereof
WO1997025201A1 (en) 1996-01-11 1997-07-17 Libbey-Owens-Ford Co. Coated glass article having a solar control coating

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080280078A1 (en) * 2006-06-30 2008-11-13 Krisko Annette J Carbon nanotube glazing technology
US7754336B2 (en) 2006-06-30 2010-07-13 Cardinal Cg Company Carbon nanotube glazing technology
US20100247820A1 (en) * 2006-06-30 2010-09-30 Cardinal Cg Company Carbon nanotube glazing technology
EP2279986A2 (en) 2006-06-30 2011-02-02 Cardinal CG Company Carbon nanotube coating technology

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CN1208495C (en) 2005-06-29
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US20020125129A1 (en) 2002-09-12
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EP0871792A1 (en) 1998-10-21
US6511587B2 (en) 2003-01-28
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US20020036135A1 (en) 2002-03-28
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US20020127349A1 (en) 2002-09-12
CN1727514A (en) 2006-02-01
US20010019738A1 (en) 2001-09-06
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US20020071971A1 (en) 2002-06-13
EP0871794A1 (en) 1998-10-21
US6468402B1 (en) 2002-10-22
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DE69723053D1 (en) 2003-07-31
EP0871792B1 (en) 2003-06-25
EP0871794B1 (en) 2002-09-18
IL125103A0 (en) 1999-01-26
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US20010010288A1 (en) 2001-08-02
JP2000503070A (en) 2000-03-14

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