US11056308B2

US11056308B2 - System and method for depth-selectable x-ray analysis

Info

Publication number: US11056308B2
Application number: US16/560,287
Authority: US
Inventors: Wenbing Yun; Janos Kirz
Original assignee: Sigray Inc
Current assignee: Sigray Inc
Priority date: 2018-09-07
Filing date: 2019-09-04
Publication date: 2021-07-06
Anticipated expiration: 2039-09-04
Also published as: WO2020051221A2; CN112823280A; DE112019004478T5; WO2020051221A3; US20200098537A1

Abstract

A system for x-ray analysis includes at least one x-ray source configured to emit x-rays. The at least one x-ray source includes at least one silicon carbide sub-source on or embedded in at least one thermally conductive substrate and configured to generate the x-rays in response to electron bombardment of the at least one silicon carbide sub-source. At least some of the x-rays emitted from the at least one x-ray source includes Si x-ray emission line x-rays. The system further includes at least one x-ray optical train configured to receive the Si x-ray emission line x-rays and to irradiate a sample with at least some of the Si x-ray emission line x-rays.

Description

CLAIM OF PRIORITY

This application claims the benefit of priority to U.S. Provisional Appl. No. 62/728,574 filed on Sep. 7, 2018 and incorporated in its entirety by reference herein.

BACKGROUND Field

This application relates generally to systems and methods for analyzing samples using x-rays, and more particularly, to x-ray sources configured to provide soft and/or tender x-rays selectable across an x-ray energy range.

Description of the Related Art

Conventional laboratory-based x-ray sources generate x-rays by bombarding a target material (e.g., solid anode; liquid metal jet) with an electron beam. The generated x-rays include emission (e.g., fluorescence) x-rays generated by the electron beam creating holes in the inner core electron orbitals of the target atoms, which are then filled by electrons of the target with binding energies that are lower than the inner core electron orbitals, with concomitant generation of emission x-rays. The emission x-rays have discrete energies that are characteristic of the target atoms and that are less than the kinetic energy of the electron beam. In addition, the generated x-rays include Bremsstrahlung x-rays generated by the deceleration of the electron beam within the target material, the Bremsstrahlung x-rays having a continuum of energies from zero to the kinetic energy of the electron beam. Generally, in x-ray analysis applications (e.g., x-ray photoelectron spectroscopy) in which x-rays having a predetermined energy irradiate the sample, the target material of the x-ray source is selected based on the characteristic discrete energies of the emission x-rays.

For example, FIG. 1 shows the x-ray photoelectron cross sections for the is, 2p, 3d, and 4s core levels of titanium and the is, 2s, and 2p core levels of oxygen. In addition, FIG. 1 shows the energy of the Al Kα emission x-ray line (1.49 keV) (e.g., as can be obtained from conventional Al-based x-ray sources) and the energy of the Ga Kα emission x-ray line (9.25 keV) (e.g., as can be obtained from conventional Ga-based liquid jet x-ray sources). In the range of x-ray photon energies between these two example conventional x-ray sources, the one-electron cross-sections of the Ti 2p, Ti 3d, O 1s, and O 2s core levels change by between 2 and 3 orders of magnitude, and the one-electron cross-sections of the Ti 4s and O 2p core levels change by about 4 orders of magnitude.

SUMMARY

In one aspect disclosed herein, a system for x-ray analysis comprises at least one x-ray source configured to emit x-rays. The at least one x-ray source comprises at least one silicon carbide sub-source on or embedded in at least one thermally conductive substrate and configured to generate the x-rays in response to electron bombardment of the at least one silicon carbide sub-source. At least some of the x-rays emitted from the at least one x-ray source comprises Si x-ray emission line x-rays. The system further comprises at least one x-ray optical train configured to receive the Si x-ray emission line x-rays and to irradiate a sample with at least some of the Si x-ray emission line x-rays.

In another aspect disclosed herein, an x-ray source comprises at least one electron source configured to generate at least one electron beam and at least one target. The at least one target comprises at least one thermally conductive substrate and a plurality of sub-sources on or embedded in at least a portion of the at least one thermally conductive substrate. The sub-sources are separate from one another and in thermal communication with the at least one thermally conductive substrate. At least one sub-source of the plurality of the sub-sources comprises silicon carbide and is configured to emit Si x-ray emission line x-rays in response to bombardment by the at least one electron beam.

In another aspect disclosed herein, a method of x-ray analysis comprises bombarding a target material comprising silicon carbide with electrons. The method further comprises emitting Si x-ray emission line x-rays from the target material. The method further comprises irradiating a sample with at least some of the Si x-ray emission line x-rays. The method further comprises detecting x-rays and/or electrons emitted from the sample.

In another aspect disclosed herein, an x-ray illumination system comprises at least one x-ray source comprising at least a first x-ray sub-source and a second x-ray sub-source. The first and second x-ray sub-sources are on or embedded in at least one thermally conductive substrate. The first x-ray sub-source comprises a first material configured to generate first x-rays in response to electron bombardment of the first x-ray sub-source. The second x-ray sub-source comprises a second material different from the first material, the second material configured to generate second x-rays in response to electron bombardment of the second x-ray sub-source. The system further comprises a plurality of x-ray optical trains comprising a first optical train and a second optical train. The first optical train comprises at least one first collimating x-ray mirror, at least one first energy-selective x-ray monochromator or multilayer, and at least one first focusing x-ray mirror. The first optical train is configured to be positioned to direct at least some of the first x-rays emitted from the first x-ray sub-source to irradiate a sample. The second optical train comprises at least one second collimating x-ray mirror, at least one second energy-selective x-ray monochromator or multilayer, and at least one second focusing x-ray mirror. The second optical train is configured to be positioned to direct at least some of the second x-rays emitted from the second x-ray sub-source to irradiate the sample.

In another aspect disclosed herein, an x-ray photoelectron spectroscopy system comprises at least one x-ray source comprising a plurality of x-ray sub-sources on or embedded in at least one thermally conductive substrate. The x-ray sub-sources comprise a plurality of materials configured to generate x-rays in response to electron bombardment. The system further comprises a plurality of x-ray optical trains, each optical train comprising at least one collimating x-ray optical element, at least one energy-selective optical element, and at least one focusing x-ray optical element. The plurality of x-ray optical trains is configured to be positioned to direct at least some of the x-rays emitted from a selected one of the plurality of x-ray sub-sources to irradiate a sample. The system further comprises a sample chamber configured to contain the sample at a sample pressure. The system further comprises a first chamber and a first electrostatic lens contained in the first chamber at a first pressure less than the sample pressure. The sample chamber and the first chamber are separated from one another by a first wall having a first aperture configured to allow at least some photoelectrons from the sample to propagate from the sample chamber to the first chamber. The system further comprises a second chamber and a second electrostatic lens contained in the second chamber at a second pressure less than the first pressure. The first chamber and the second chamber are separated from one another by a second wall having a second aperture configured to allow at least some of the photoelectrons in the first chamber to propagate to the second chamber.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 shows the photoemission cross sections for the is, 2p, 3d, and 4s core levels of titanium and the is, 2s, and 2p core levels of oxygen with the energy of the Al Kα x-ray line (1.49 keV) and the energy of the Ga Kα x-ray line (9.25 keV).

FIGS. 2A-2C schematically illustrate various examples of a system for x-ray analysis in accordance with certain embodiments described herein.

FIG. 3 schematically illustrates an example x-ray source configured to emit x-rays in accordance with certain embodiments described herein.

FIG. 4A shows the attenuation length of photons incident on a silicon surface as a function of photon energy in accordance with certain embodiments described herein.

FIG. 4B shows the attenuation length of photons incident on a hafnium surface as a function of photon energy in accordance with certain embodiments described herein.

FIG. 5A shows a plot of the parametric inelastic mean free path of electrons as a function of electron kinetic energy in accordance with certain embodiments described herein.

FIG. 5B shows the plot of the parametric inelastic mean free path of electrons as a function of electron kinetic energy with arrows denoting the energies of the Hf M₅(3d_5/2) photoelectrons generated by three x-ray lines (Si Kα₁; Rh Kα; Cr Kα₁) and a corresponding table of values in accordance with certain embodiments described herein.

FIG. 5C shows the plot of the parametric inelastic mean free path of electrons as a function of electron kinetic energy with arrows denoting the energies of the Al K (is) photoelectrons and the Al L (2p) photoelectrons generated by three x-ray lines (Si Kα₁; Rh Kα; Cr Kα₁) and a corresponding table of values in accordance with certain embodiments described herein.

FIG. 5D shows the plot of the parametric inelastic mean free path of electrons as a function of electron kinetic energy with arrows denoting the energies of the Ti K (is) photoelectrons and the Ti L (2p) photoelectrons generated by three x-ray lines (Si Kα₁; Rh Kα; Cr Kα₁) and a corresponding table of values in accordance with certain embodiments described herein.

FIG. 6 shows a plot of the relative photoelectron intensity as a function of depth for Si 2p photoelectrons generated using various x-ray energies in accordance with certain embodiments described herein.

FIG. 7 shows a plot of the inelastic mean free path of electrons in liquid water as a function of electron kinetic energy in accordance with certain embodiments described herein.

FIG. 8A schematically illustrate the Fe 2p photoemission peak intensity as a function of x-ray energy from a silicon substrate with a 1-nm-thick Fe layer and a carbon overlayer having three thicknesses of 10 nm, 20 nm, and 30 nm in accordance with certain embodiments described herein.

FIG. 8B shows a simulation from the “NIST Database for the Simulation of Electron Spectra for Surface Analysis (SESSA).”

FIG. 9A schematically illustrates a portion of an example system utilizing small focus enabling atmospheric pressure XPS in accordance with certain embodiments described herein.

FIGS. 9B and 9C show an example electrostatic lens assembly and an example APXPS system (located at the Advanced Light Source), respectively, in accordance with certain embodiments described herein.

FIG. 10 shows example advantages of ambient pressure XPS in accordance with certain embodiments described herein.

FIG. 11 shows the equilibrium vapor pressure of water as a function of temperature.

DETAILED DESCRIPTION

Certain embodiments described herein advantageously provide emission x-rays with energies within the range between the Al Kα x-ray line (1.49 keV) and the Ga Kα x-ray line (9.25 keV). In certain embodiments, these emission x-rays are used to advantageously provide valuable information regarding samples under analysis (e.g., by selecting the emission x-ray energy to optimize the photoelectron cross sections).

Certain embodiments described herein provide a source of soft and/or tender x-rays (e.g., soft x-rays with energies in a range of 0.5 keV to about 1.8 keV; tender x-rays with energies in a range of about 1.8 keV to 6 keV) selectable across a broad energy range for tuning depth sensitivity as well as studying interfaces (e.g., gas/solid; gas/liquid; liquid/solid). The system in certain embodiments is optimized to provide a high flux of monochromatic and focused x-rays. The x-ray source of certain embodiments described herein is mountable on a 4.5″ ConFlat® flange, includes a replaceable window (e.g., Be), and includes a mechanism with sufficient travel (e.g., 50 mm) to move and position the x-ray source relative to the x-ray optical elements without breaking vacuum and without requiring re-alignment.

Certain embodiments described herein provide selectable (e.g., tunable) x-ray energies (e.g., selectable among 1.74 keV, 2.7 keV, and 5.4 keV), thereby advantageously providing selectable probing depths (e.g., from 1 nm to 15 nm) for surface, interface, and bulk analysis, and with optimized sensitivity to selected elements (e.g., Hf; Al; Ti). Certain embodiments described herein provide high x-ray energy resolution (e.g., better than 0.7 eV for all energies), small x-ray focus spot sizes (e.g., in a range from 10 μm to 200 μm; 15 μm or less; 20 μm or less; 100 μm or less) for small spot analysis and imaging, and high flux of monochromatic x-rays (e.g., greater than 2×10⁹photons/second at 100 μm spot size and 200 W or 300 W electron beam power; up to 5×10⁹photons/second) for high-speed analysis). Certain embodiments described herein provide in situ, in vitro, and/or in operando analysis in combination with small focus spot sizes and high excitation energies, thereby advantageously enabling near-ambient pressure operation. For example, by using an x-ray spot size of 100 μm, certain embodiments described herein can include electron energy analyzer slit sizes of 100 μm, thereby allowing a pressure in the sample region of about 20 mbar, which is comparable to the vapor pressure of water (e.g., about 17 mbar at 15 degrees Celsius). For another example, by using an x-ray spot size of 10 μm, certain embodiments described herein can include electron energy analyzer slit sizes of 10 μm, thereby allowing a pressure in the sample region of about 100 mbar or even higher (e.g., 1 bar), with concomitant reduced signal strength, which can be advantageously used for the study of catalysis. Certain embodiments described herein provide fully automated selection of excitation energy and/or focus spot size, with no cross-contamination of different x-rays.

FIGS. 2A-2C schematically illustrate various examples of a system 10 for x-ray analysis in accordance with certain embodiments described herein. The system 10 comprises at least one x-ray source 20 configured to emit x-rays 22. In certain embodiments, the at least one x-ray source 20 comprises at least one silicon carbide sub-source on (e.g., adhered to; affixed to; sputtered onto) or embedded in at least one thermally conductive substrate (e.g., diamond) and configured to generate the x-rays 22 in response to electron bombardment of the at least one silicon carbide sub-source. For example, the at least one silicon carbide sub-source can be in thermal communication with the at least one thermally conductive substrate, thereby providing a heat flow path away from the at least one silicon carbide sub-source. At least some of the x-rays 22 emitted from the at least one silicon carbide sub-source of the at least one x-ray source 20 comprise Si characteristic x-rays (e.g., Si x-ray emission line x-rays; Si Kα₁x-ray emission line x-rays; Si x-ray emission line x-rays that have an energy approximately equal to 1.74 keV).

While prior systems have included x-ray sources with anodes having a heat dissipation layer comprising silicon carbide, these the x-ray sources have not been configured to emit Si characteristic x-rays (e.g., the Si Kα₁line) generated in the silicon carbide (see, e.g., U.S. Pat. Appl. Publ. No. 2014/0185778). The x-ray source 20 of certain embodiments described herein is optimized to emit the Si characteristic x-rays (e.g., the Si Kα₁line) generated in the silicon carbide sub-source (e.g., to provide the Si characteristic x-rays for use by the system 10).

FIG. 3 schematically illustrates an example x-ray source 20 configured to emit x-rays 22 in accordance with certain embodiments described herein. The x-ray source 20 comprises at least one electron source 21 (e.g., at least one electron gun column having an electron emitter cathode and associated grids, lenses, and power supplies) configured to generate at least one electron beam 23. The x-ray source 20 further comprises at least one target 24 comprising at least one thermally conductive substrate 25 and a plurality of sub-sources 26 on (e.g., adhered to; affixed to; sputtered onto) or embedded in at least a portion of the at least one thermally conductive substrate 25 (e.g., diamond). The sub-sources 26 (e.g., microstructured, sub-micron-sized, or micron-sized) are separate from one another and in thermal communication with the at least one thermally conductive substrate 25. In certain embodiments, at least one sub-source 26 a of the plurality of the sub-sources 26 comprises silicon carbide (SiC) and is configured to emit Si x-ray emission line x-rays 22 a in response to bombardment by the at least one electron beam 23. For example, the x-rays 22 a emitted from the at least one SiC sub-source 26 a have energies corresponding to the Si KcL line (1.74 keV). SiC is electrically conductive and has a high melting point, and certain embodiments described herein advantageously use SiC as a target material to generate the x-rays 22 a with energies and high fluxes that have previously been unavailable from laboratory-based x-ray sources.

In certain embodiments, the at least one x-ray source 20 is configured to bombard a selected sub-source 26 with the at least one electron beam 23 (e.g., by moving, relative to one another, one or both of the at least one electron beam 23 and the at least one target 24). For example, the at least one electron source 21 of certain embodiments can be configured to direct the at least one electron beam 23 (e.g., via electric and/or magnetic fields) to bombard at least one selected sub-source 26 of the plurality of sub-sources 26 (e.g., as denoted in FIG. 3 by the dashed double-headed arrow). For another example, the at least one target 24 can be mounted on a stage (not shown) to move the at least one target 24 laterally relative to the electron beam 23 (e.g., as denoted in FIG. 3 by the solid double-headed arrow).

As schematically illustrated by FIG. 3, the at least one silicon carbide sub-source 26 a of certain embodiments comprises a substrate portion 25 a (e.g., diamond) on or embedded in another substrate portion 25 b and at least one layer 27 a on the substrate portion 25 a, the at least one layer 27 a comprising silicon carbide. In certain embodiments, the at least one layer 27 a comprising silicon carbide is formed (e.g., via chemical vapor deposition, sputtering, sol-gel coating, plasma spraying, and/or reactant spraying) onto the thermally conductive substrate portion 25 a. For example, RF or DC magnetron sputtering can be used with a silicon carbide sputtering target (e.g., available from Saint-Gobain Ceramic Material of Courbevoie France or American Elements of Los Angeles Calif.) to form a silicon carbide film (see, e.g., U.S. Pat. No. 5,944,963) on a thermally conductive substrate (e.g., diamond). In certain embodiments, the at least one layer 27 a comprising silicon carbide comprises single-crystal silicon carbide (e.g., 4H A-grade, N-type silicon carbide crystal available from MSE Supplies of Tucson Ariz.). In certain embodiments, the silicon carbide is doped to be electrically conductive (e.g., with an electrical conductivity sufficient to prevent charging of the silicon carbide film due to the electron bombardment), while in certain other embodiments, the silicon carbide has an electrically-conductive surface coating (e.g., with nanometer-scale thickness).

In certain embodiments, the at least one layer 27 a comprises at least one intermediate layer (e.g., W) between the substrate portion 25 a and the silicon carbide, the at least one intermediate layer configured to facilitate adhesion of the silicon carbide to the substrate portion 25 a and/or to provide a diffusion barrier between the silicon carbide and the substrate portion 25 a. While pure, stoichiometric silicon carbide is a semiconductor, in certain embodiments, the silicon carbide can be non-stoichiometric (e.g., containing excess carbon; a molar ratio of carbon to silicon in a range between 1 and 1.45), can be doped, and/or can be coated with a thin metal layer to provide a predetermined electrical conductivity so that the sub-source 26 a is configured to be used in the anode of the x-ray source 20.

In certain embodiments, the plurality of sub-sources 26 comprises at least one first sub-source 26 a comprising SiC and at least one second sub-source 26 b comprising at least one target material different from SiC (e.g., Al, Ag, Rh, Cr, Au, Ti, Fe, and/or Mo). In certain other embodiments, the plurality of sub-sources 26 comprises a plurality of target materials (e.g., 3, 4, or more) selected from the group consisting of: Al, Ag, Rh, Cr, Au, Ti, Fe, and Mo. The at least one target material can be on (e.g., adhered to; affixed to; sputtered onto) or embedded in a single thermally conductive substrate (e.g., diamond) or a plurality of thermally conductive substrates. For example, the at least one target material can be in thermal communication with the at least one thermally conductive substrate 26, thereby providing a heat flow path away from the at least one target material. The emitted x-rays 22 have energies corresponding to one or more characteristic x-ray lines (e.g., x-ray emission lines) of the at least one target material and ultrahigh source brightness. For example, the emitted x-rays 22 can comprise at least one of: Al Kα x-ray emission line x-rays (about 1.49 keV); Ag Lα x-ray emission line x-rays (about 2.98 keV); Rh Lα x-ray emission line x-rays (about 2.70 keV); Cr Kα₁x-ray emission line x-rays (about 5.42 keV); Au Lα x-ray emission line x-rays (about 9.70 keV); Ti Kα x-ray emission line x-rays (about 4.51 keV); Fe Kα x-ray emission line x-rays (about 6.40 keV); Mo Lα x-ray emission line x-rays (about 2.29 keV); Mo Lβ₁and Mo Lβ₂x-ray emission line x-rays (about 2.39 keV and 2.52 keV, respectively).

In certain embodiments, the at least one x-ray source 20 further comprises an x-ray window 28 (e.g., Be) configured to allow at least some of the Si x-ray emission line x-rays 22 a to propagate from a first region within the x-ray source 20 and containing the at least one sub-source 27 a, through the x-ray window 28, to a second region outside the x-ray source 20.

In certain embodiments, the at least one target 24 comprises an anode disk configured to be rapidly rotated while under vacuum with different regions of the anode disk along a circular track being sequentially irradiated by the electron beam 23, thereby distributing the heat load from the electron beam 23 over the circular track of the anode disk. In certain such embodiments, the anode disk is cooled by coolant (e.g., water) flowing through cooling channels within the anode disk. In certain other embodiments, the at least one target 24 is radiatively cooled. For example, a rotating anode disk of the at least one target 24 can comprise silicon carbide (which can withstand operating temperatures of about 2000 degrees Celsius), and at least one heat sink can be positioned in close proximity to a surface portion of the rotating anode disk in a region of the rotating anode disk that is separate from the region of the rotating anode disk being irradiated by the electron beam 23. While conventional rotating source anodes with cooling channels can be operated with an electron beam 23 having a power of 1000 W in a spot size of about 80 μm×80 μm, certain embodiments described herein (utilizing a rotating anode disk comprising silicon carbide) can be operated with an electron beam 23 having a power of 200 W or 300 W in a spot size of about 5 μm×5 μm, resulting in at least about a 50× improvement in x-ray brightness (80 μm/5 μm×80 μm/5 μm×200 W/1000 W).

Example parameters of the at least one x-ray source 20 include, but are not limited to: variable anode voltage in a range of 5 keV to 30 keV; electron power of up to 300 W, an electron beam footprint on at least one selected sub-source having a user-selectable size (e.g., full-width-at-half-maximum) with a first lateral dimension within a range of 5 μm to 50 μm (e.g., 5 μm to 25 μm; 10 μm to 50 μm; 10 μm to 25 μm; 25 μm to 50 μm) and a second lateral dimension perpendicular to the first lateral dimension, the second lateral dimension within a range of 30 μm to 200 μm (e.g., 30 μm to 150 μm, 30 μm to 100 μm). Examples of the at least one x-ray source 20 comprising a plurality of sub-sources 26 compatible with certain embodiments described herein are disclosed by U.S. Pat. Nos. 9,874,531, 9,823,203, 9,719,947, 9,594,036, 9,570,265, 9,543,109, 9,449,781, 9,448,190, and 9,390,881, each of which is incorporated in its entirety by reference herein.

In certain embodiments, the system 10 comprises one or more of: an x-ray photoelectron spectroscopy (XPS) system, a photoemission electron microscopy (PEEM) system, an angle-resolved photoemission spectroscopy (ARPES) system, an ambient-pressure x-ray photoelectron spectroscopy (APXPS) system, an x-ray fluorescence (XRF) system, an x-ray emission (XES) system, an x-ray phase contrast imaging system, and a computed tomography imaging system. Other types of systems and/or applications of the system are also compatible with certain embodiments described herein. The samples under analysis can comprise one or more biological samples (e.g., tissue samples), one or more semiconductor samples, one or more geological samples, and/or other types of samples.

For trace element analysis of semiconductor and geological samples, the use of the Si Kα₁x-ray emission line x-rays can advantageously reduce the background contribution from the silicon in the samples. Since the energy of the Si Kα₁x-ray emission line x-rays (about 1.74 keV) is lower than the Si K absorption edge energy, the Si Kα₁x-ray emission line x-rays do not generate the background photoelectron and/or fluorescence contributions from Si that would be seen if x-rays above the Si K absorption edge energy were used.

In certain embodiments, as schematically illustrated by FIGS. 2A-2C, the system 10 further comprises at least one first x-ray optical element 30 configured to receive at least some of the x-rays 22 emitted from the at least one x-ray source 20 and to generate a collimated first x-ray beam 32. The system 10 further comprises at least one second x-ray optical element 40 configured to receive at least a portion of the collimated first x-ray beam 32 and to emit a monochromatic second x-ray beam 42. The system 10 further comprises at least one third x-ray optical element 50 configured to receive at least a portion of the monochromatic second x-ray beam 42 and to focus a third x-ray beam 52 at a sample 60 to be analyzed.

FIG. 2B schematically illustrates an example system 10 comprising in accordance with certain embodiments described herein. The at least one first x-ray optical element 30 of FIG. 2B comprises at least one x-ray collimating optical element 34 (e.g., mirror; mirror lens) configured to receive at least some of the x-rays 22 emitted from the at least one x-ray source 20 (e.g., including at least some of the Si x-ray emission line x-rays) and to generate the collimated first x-ray beam 32. The surface 36 can be concave and curved in at least one cross-sectional plane parallel to a longitudinal axis 38 of the at least one x-ray collimating optical element 34 (e.g., in a cross-sectional plane that includes the longitudinal axis 38). The at least one x-ray collimating optical element 34 can comprise an axially symmetric x-ray collimating optic (e.g., a paraboloidal mirror lens; a Wolter optic) having a surface 36 configured to collect and to efficiently direct (e.g., reflect; diffract) at least some x-rays 22 from the at least one x-ray source 20 into the collimated first x-ray beam 32. For example, the at least one x-ray sub-source being bombarded by the at least one electron beam can be positioned at or near a focus of the at least one x-ray collimating optical element 30 such that at least some of the emitted x-rays 22 impinge the surface 36 at an incident grazing angle that is smaller than the critical angle and are reflected into the collimated first x-ray beam 32. In certain embodiments, the at least one collimating optical element 34 comprises at least one layer (e.g., a depth-graded multilayer coating; a mosaic crystal layer) at the surface 36, the at least one layer configured to efficiently collect and direct (e.g., reflect; diffract) the x-rays 22 with specific x-ray energies. Examples of x-ray collimating optical elements 34 compatible with certain embodiments described herein are disclosed by U.S. Pat. Nos. 9,874,531, 9,823,203, 9,719,947, 9,594,036, 9,570,265, 9,543,109, 9,449,781, 9,448,190, and 9,390,881, each of which is incorporated in its entirety by reference herein.

In certain embodiments, the at least one x-ray collimating optical element 34 comprises at least one substrate (e.g., comprising glass or silicon oxide). For example, the at least one substrate can be a single, unitary, hollow, axially symmetric structure (e.g., an axially symmetric tube) comprising an inner surface 36 that extends fully around the longitudinal axis 38 (e.g., encircles the longitudinal axis 38; extends 360 degrees around the longitudinal axis 38). In certain other embodiments, the at least one substrate can comprise a portion of a hollow, axially symmetric structure (e.g., a portion of an axially symmetric tube) extending along the longitudinal axis 38 with a surface 36 that extends only partially around the longitudinal axis 38 (e.g., less than 360 degrees; in a range of 45 degrees to 315 degrees; in a range of 45 degrees to 360 degrees; in a range of 180 degrees to 360 degrees; in a range of 90 degrees to 270 degrees). In certain other embodiments, the at least one substrate comprises multiple portions (e.g., 2, 3, 4, 5, 6, or more) separate from one another (e.g., with spaces between the portions) and distributed around the longitudinal axis 38, with the surface 36 of each portion extending at least partially around and along the longitudinal axis 38. For example, the surfaces 36 of the multiple portions can each extend around the longitudinal axis 38 by an angle in a range of 15 degrees to 175 degrees, in a range of 30 degrees to 115 degrees, and/or in a range of 45 degrees to 85 degrees.

In certain embodiments, at least a portion of the surface 36 has a profile that comprises a portion of a quadric profile in a cross-sectional plane that comprises the longitudinal axis 38. In certain embodiments, the surface 36 comprises multiple portions having cross-sectional profiles (e.g., in a cross-sectional plane that comprises the longitudinal axis 38) comprising corresponding quadric profiles. Examples of quadric profiles compatible with certain embodiments described herein include, but are not limited to: at least one ellipsoid; at least one paraboloid; at least one hyperboloid; or a combination of two or more thereof. In certain embodiments, the surface 36 has a first linear dimension (e.g., length) parallel to the longitudinal axis 38 in a range of 3 mm to 150 mm, a second linear dimension (e.g., width) perpendicular to the first linear dimension in a range of 1 mm to 50 mm, and a maximum linear dimension (e.g., an inner diameter; a maximum length of a straight line segment joining two points on the surface 36) in a range of 1 mm to 50 mm in a plane perpendicular to the longitudinal axis 38, a surface roughness in a range of 0.1 nm to 1 nm, and/or a plurality of surface tangent planes having a range of angles relative to the longitudinal axis 38 in a range of 0.002 radian to 0.5 radian (e.g., in a range of 0.002 radian to 0.4 radian; in a range of 0.002 radian to 0.3 radian; in a range of 0.002 radian to 0.2 radian).

The at least one second x-ray optical element 40 of FIG. 2B comprises at least one energy-selective component (e.g., x-ray monochromator; multilayer; multilayer-coated optical substrate) configured to receive at least a portion of the collimated first x-ray beam 32 and to emit the monochromatic second x-ray beam 42 (e.g., including at least some of the Si x-ray emission line x-rays). In certain embodiments, the at least one second x-ray optical element 40 has an energy resolution better than 2 eV. For example, the at least one second x-ray optical element 40 can comprise at least one x-ray crystal monochromator (e.g., a single-crystal monochromator; a double-crystal monochromator; a quartz monochromator; an InSb(111) monochromator; a Ge(111) monochromator; a Ge(220) monochromator; a Si(111) monochromator) having a resolution of at least 1×10⁻⁴. For another example, the at least one second x-ray optical element 40 can comprise at least one multilayer-coated optical substrate having a resolution of at least 1×10⁻³. While FIG. 2B schematically illustrate the at least one second x-ray optical element 40 as being separate from the at least one first x-ray optical element 30 and from the at least one third x-ray optical element 50, in certain other embodiments, the at least one second x-ray optical element 40 comprises an energy-selective coating (e.g., a multilayer coating configured to substantially reflect x-rays within a predetermined energy range) at a reflecting surface of the at least one first x-ray optical element 30 and/or at a reflecting surface of the at least one third x-ray optical element 50. Examples of an energy-selective component compatible with certain embodiments described herein are disclosed by U.S. Pat. Nos. 9,874,531, 9,823,203, 9,719,947, 9,594,036, 9,570,265, 9,543,109, 9,449,781, 9,448,190, and 9,390,881, each of which is incorporated in its entirety by reference herein.

The at least one third x-ray optical element 50 of FIG. 2B comprises at least one x-ray focusing optical element 54 (e.g., mirror; mirror lens) configured to receive at least a portion of the monochromatic second x-ray beam 42 and to focus the third x-ray beam 52 (e.g., including at least some of the Si x-ray emission line x-rays) at the sample 60 (e.g., focused at a surface region of the sample 60). The surface 56 can be concave and curved in at least one cross-sectional plane parallel to a longitudinal axis 58 of the at least one x-ray focusing optical element 54 (e.g., in a cross-sectional plane that includes the longitudinal axis 58). The at least one x-ray focusing optical element 54 can comprise an axially symmetric x-ray focusing optic (e.g., a paraboloidal mirror lens; a Wolter optic) having a surface 56 configured to collect and to efficiently direct (e.g., reflect; diffract) and focus at least some of the monochromatic second x-ray beam 42 at the sample 60 to be analyzed. For example, the at least one x-ray focusing optical element 50 can be positioned relative to the at least one second x-ray optical element 40 such that the monochromatic second x-ray beam 42 impinges the surface 56 at an incident grazing angle that is smaller than the critical angle and focused by the at least one x-ray focusing optical element 50 into the third x-ray beam 52 with a focus at the sample 60 to be analyzed. In certain embodiments, the at least one x-ray focusing optical element 54 comprises at least one layer (e.g., a depth-graded multilayer coating; a mosaic crystal layer) at the surface 56, the at least one layer configured to efficiently collect the second x-ray beam 42 and to focus the third x-ray beam 52 at the sample 60. Examples of x-ray focusing optical elements 54 compatible with certain embodiments described herein are disclosed by U.S. Pat. Nos. 9,874,531, 9,823,203, 9,719,947, 9,594,036, 9,570,265, 9,543,109, 9,449,781, 9,448,190, and 9,390,881, each of which is incorporated in its entirety by reference herein.

In certain embodiments, the at least one x-ray focusing optical element 54 comprises at least one substrate (e.g., comprising glass or silicon oxide). For example, the at least one substrate can be a single, unitary, hollow, axially symmetric structure (e.g., an axially symmetric tube) comprising an inner surface 56 that extends fully around the longitudinal axis 58 (e.g., encircles the longitudinal axis 58; extends 360 degrees around the longitudinal axis 58). In certain other embodiments, the at least one substrate can comprise a portion of a hollow, axially symmetric structure (e.g., a portion of an axially symmetric tube) extending along the longitudinal axis 58 with a surface 56 that extends only partially around the longitudinal axis 58 (e.g., less than 360 degrees; in a range of 45 degrees to 315 degrees; in a range of 45 degrees to 360 degrees; in a range of 180 degrees to 360 degrees; in a range of 90 degrees to 270 degrees). In certain other embodiments, the at least one substrate comprises multiple portions (e.g., 2, 3, 4, 5, 6, or more) separate from one another (e.g., with spaces between the portions) and distributed around the longitudinal axis 58, with the surface 56 of each portion extending at least partially around and along the longitudinal axis 58. For example, the surfaces 56 of the multiple portions can each extend around the longitudinal axis 58 by an angle in a range of 15 degrees to 175 degrees, in a range of 30 degrees to 115 degrees, and/or in a range of 45 degrees to 85 degrees.

In certain embodiments, at least a portion of the surface 56 has a profile that comprises a portion of a quadric profile in a cross-sectional plane that comprises the longitudinal axis 58. In certain embodiments, the surface 56 comprises multiple portions having cross-sectional profiles (e.g., in a cross-sectional plane that comprises the longitudinal axis 58) comprising corresponding quadric profiles. Examples of quadric profiles compatible with certain embodiments described herein include, but are not limited to: at least one ellipsoid; at least one paraboloid; at least one hyperboloid; or a combination of two or more thereof. In certain embodiments, the surface 56 has a first linear dimension (e.g., length) parallel to the longitudinal axis 58 in a range of 3 mm to 150 mm, a second linear dimension (e.g., width) perpendicular to the first linear dimension in a range of 1 mm to 50 mm, and a maximum linear dimension (e.g., an inner diameter; a maximum length of a straight line segment joining two points on the surface 56) in a range of 1 mm to 50 mm in a plane perpendicular to the longitudinal axis 58, a surface roughness in a range of 0.1 nm to 1 nm, and/or a plurality of surface tangent planes having a range of angles relative to the longitudinal axis 58 in a range of 0.002 radian to 0.5 radian (e.g., in a range of 0.002 radian to 0.4 radian; in a range of 0.002 radian to 0.3 radian; in a range of 0.002 radian to 0.2 radian).

In certain embodiments, the system 10 further comprises at least one beam stop 80 configured to prevent a non-reflected portion of the x-rays 22 from impinging the at least one second x-ray optical element 40. As schematically illustrated by FIG. 2B, the at least one beam stop 80 can be positioned on a longitudinal axis 38 of the at least one first x-ray optical element 30 (e.g., at or near an upstream end of the at least one first x-ray optical element 30; at or near a downstream end of the at least one first x-ray optical element 30; upstream from the at least one first x-ray optical element 30; downstream from the at least one first x-ray optical element 30). Example beam stops 80 compatible with certain embodiments described herein are disclosed by U.S. Pat. Nos. 9,874,531, 9,823,203, 9,719,947, 9,594,036, 9,570,265, 9,543,109, 9,449,781, 9,448,190, and 9,390,881, each of which is incorporated in its entirety by reference herein.

In certain embodiments, the system 10 further comprises at least one detector subsystem 70 (e.g., comprising an energy dispersive x-ray energy analyzer and/or an energy dispersive electron energy analyzer) configured to detect x-rays 62 and/or electrons 64 emitted from the sample 60 (e.g., in response to the sample 60 being irradiated by the third x-ray beam 52). For example, for a system 10 selected from the group consisting of an x-ray photoelectron spectroscopy (XPS) system, a photoemission electron microscopy (PEEM) system, and an ambient-pressure x-ray photoelectron spectroscopy (APXPS) system, the at least one detector subsystem 70 can be configured to detect photoelectrons 62 (e.g., with electron energy resolution) emitted from the sample 60 in response to at least a portion of the third x-ray beam 52. For another example, for a system 10 selected from the group consisting of an x-ray fluorescence (XRF) system and an x-ray emission (XES) system, the at least one detector subsystem 70 can be configured to detect emission (e.g., fluorescence) x-rays 64 (e.g., with x-ray energy resolution) emitted from the sample 60 in response to at least a portion of the third x-ray beam 52. In certain embodiments, the at least one detector subsystem 70 comprises a pixel array 72 configured to generate images indicative of a spatial distribution of the elemental distribution of portions of the sample 60 from which the detected electrons 62 and/or detected x-rays 64 are emitted. In certain embodiments, the focused third x-ray beam 52 irradiates a portion of a first surface of the sample 60, and the at least one detector subsystem 70 can be positioned to detect x-rays 62 and/or electrons 64 emitted from at least one of: the same portion of the first surface, a different portion of the first surface, and a second surface of the sample 60 different from the first surface (e.g., the second surface opposite to the first surface). Example detector subsystems 70 compatible with certain embodiments described herein are disclosed by U.S. Pat. Nos. 9,874,531, 9,823,203, 9,719,947, 9,594,036, 9,570,265, 9,543,109, 9,449,781, 9,448,190, and 9,390,881, each of which is incorporated in its entirety by reference herein.

FIG. 2C schematically illustrates an example system 10 comprising a plurality of x-ray optical trains 90 (e.g., beamlines) in accordance with certain embodiments described herein. The plurality of x-ray optical trains 90 of FIG. 2C are configured to be moved relative to the at least one x-ray source 20, the sample 60, and/or the at least one detector subsystem 70 such that a selected x-ray optical train 90 is positioned to receive x-rays 22 from the at least one x-ray source 20 and to irradiate the sample 60 with the third x-ray beam 52. Example x-ray optical trains compatible with certain embodiments described herein are disclosed by U.S. Pat. Nos. 9,823,203 and 9,594,036, each of which is incorporated in its entirety by reference herein.

In certain embodiments, each of the x-ray optical trains 90 is mounted to a controllably movable stage 92 (e.g., motorized translation and/or rotation stage) configured to controllably position and select an x-ray optical train 90 for use. For example, as schematically illustrated by FIG. 2C, the system 10 comprises first, second, and third x-ray optical trains 90 a-90 c each comprising a corresponding first x-ray optical element 30 a-30 c (e.g., an x-ray collimating optical element), a corresponding second x-ray optical element 40 a-40 c (e.g., an x-ray monochromator; multilayer; multilayer-coated optical substrate), and a corresponding third x-ray optical element 50 a-50 c (e.g., an x-ray focusing optical element). Each of the x-ray optical trains 90 a-90 c is configured for conversion (e.g., optimized for efficient conversion) of x-rays 22 a-22 c from a corresponding target sub-source material of the x-ray source 20 into a third x-ray beam 52 a-52 c having a corresponding energy for irradiating the sample 60. While FIG. 2C schematically illustrates an example system 10 in which the multiple components of the plurality of x-ray optical trains 90 are fixed relative to one another on a single controllably movable stage 92 and are moved together (indicated in FIG. 2C by arrows 94), in certain other embodiments, the plurality of first x-ray optical elements 30 are fixed relative to one another on a first controllably movable stage, the plurality of second x-ray optical elements 40 are fixed relative to one another on a second controllably movable stage, and the plurality of third x-ray optical elements 50 are fixed relative to one another on a third controllably movable stage, such that the first, second, and third stages can be controllably moved independently from one another to form an x-ray optical train comprising selected combinations of one x-ray optical element from each of the first, second, and third pluralities of x-ray

optical elements

30, 40, 50.

In certain embodiments, a first x-ray optical train 90 a is configured to be positioned to receive the x-rays 22 from the x-ray source 20 while a first target material of the x-ray source 20 comprising SiC is emitting x-rays 22 a (e.g., including at least some of the Si x-ray emission line x-rays) and a second x-ray optical train 90 b is configured to be positioned to receive the x-rays 22 from the x-ray source 20 while a second target material (e.g., Cr) of the x-ray source 20 is emitting x-rays 22 b (e.g., including at least some of the x-ray emission line x-rays of the second target material). In certain embodiments further comprising a third x-ray optical train 90 c, the third x-ray optical train 90 c is configured to be positioned to receive the x-rays 22 from the x-ray source 20 while a third target material (e.g., Rh) of the x-ray source 20 is emitting x-rays 22 c (e.g., including at least some of the x-ray emission line x-rays of the third target material).

In certain embodiments, the system 10 is configured to generate a Si Kα (1.74 keV) monochromatic focused third x-ray beam 52 and comprises (i) an x-ray source 20 comprising an anode comprising microstructured SiC; (ii) a first x-ray optical element 30 comprising a collimating parabolic mirror having a silver coating; (iii) a second x-ray optical element 40 comprising a channel-cut quartz or InSb (111) double-crystal monochromator, and (iv) a third x-ray optical element 50 comprising a focusing parabolic mirror having a silver coating. The monochromatic third x-ray beam 52 can have a line width with a full-width-at-half-maximum in a range of 0.5 eV to 0.7 eV, a focused x-ray spot size selectable in a range of 10 μm to 200 μm (e.g., by selecting an electron spot size on the anode; fully automated), and can be optimized for high flux (e.g., at least 2×10⁹photons/second for a 100 μm spot size at 200 W or 300 W of electron beam power).

In certain embodiments, in addition to being configured to generate a Si Kα (1.74 keV) monochromatic focused third x-ray beam 52 as described above, the system 10 is further configured to generate a Cr Kα (5.42 keV) monochromatic focused third x-ray beam 52 and comprises (i) an x-ray source 20 comprising an anode comprising microstructured chromium imbedded in diamond; (ii) a first x-ray optical element 30 comprising a collimating parabolic mirror having a platinum coating; (iii) a second x-ray optical element 40 comprising a channel-cut Ge (111) or Ge (220) double-crystal monochromator, and (iv) a third x-ray optical element 50 comprising a focusing parabolic mirror having a platinum coating. The monochromatic third x-ray beam 52 can have a line width with a full-width-at-half-maximum of 0.5 eV, a focused x-ray spot size selectable in a range of 10 μm to 200 μm (e.g., by selecting an electron spot size on the anode; fully automated), and can be optimized for high flux (e.g., at least 2×10⁹photons/second for a 100 μm spot size at 200 W or 300 W of electron beam power).

In certain embodiments, in addition to being configured to generate a Si Kα (1.74 keV) monochromatic focused third x-ray beam 52 as described above, the system 10 is further configured to generate a Rh Lα (2.70 keV) monochromatic focused third x-ray beam 52 and comprises (i) an x-ray source 20 comprising an anode comprising microstructured rhodium imbedded in diamond; (ii) a first x-ray optical element 30 comprising a collimating parabolic mirror having a silver coating; (iii) a second x-ray optical element 40 comprising a channel-cut Ge (111) or Si (111) double-crystal monochromator, and (iv) a third x-ray optical element 50 comprising a focusing parabolic mirror having a silver coating. The monochromatic third x-ray beam 52 can have a line width with a full-width-at-half-maximum of 0.5 eV, a focused x-ray spot size selectable in a range of 10 μm to 200 μm (e.g., by selecting an electron spot size on the anode; fully automated), and can be optimized for high flux (e.g., at least 2×10⁹photons/second for a 100 μm spot size at 200 W or 300 W of electron beam power).

Depth Selectivity

In certain embodiments, the system 10 is configured to provide depth selectivity by virtue of one or more of the following: the attenuation length within the sample 60 of the excitation third x-ray beam 52 (e.g., the distance that the third x-ray beam 52 propagates within the sample 60 where the intensity of the third x-ray beam 52 has dropped by a factor of 1/e; I_{attenuation length}/I_incident=1/e); the attenuation length within the sample 60 of the emission (e.g., fluorescence) x-rays 62 (e.g., the distance that the emission x-rays 62 propagate within the sample 60 where the intensity of the emission x-rays 62 has dropped by a factor of 1/e), and/or the inelastic mean free path within the sample 60 of the photoelectrons 64 (e.g., the distance, on average, that the photoelectrons 64 propagate, without loss of kinetic energy, within the sample 60 where the intensity of the photoelectrons 64 has dropped by a factor of 1/e). These attenuation lengths of the

x-rays

52, 62 and the inelastic mean free path of the photoelectrons 64 are dependent on the material of the sample 60 and the energies of the

excitation x-rays

52, 62 and the kinetic energies of the photoelectrons 64, respectively.

For example, FIGS. 4A and 4B show the attenuation lengths for photons within silicon and hafnium, respectively, in accordance with certain embodiments described herein. FIG. 4A shows the attenuation length of photons incident on a silicon surface as a function of photon energy in accordance with certain embodiments described herein. The arrows indicate that Si Kα₁(1.74 keV) x-rays (which are above the L edge of Si and below the K edge of Si) have an attenuation length in Si of about 10 μm, Rh Lα (2.70 keV) x-rays (which are above the K edge of Si) have an attenuation length in Si of about 3 μm, and Cr Kα₁(5.42 keV) x-rays (which are above the K edge of Si) have an attenuation length in Si of about 21 μm. Therefore, x-rays with these three photon energies can be used in certain embodiments described herein to analyze different depths of a Si sample.

FIG. 4B shows the attenuation length of photons incident on a hafnium surface as a function of photon energy in accordance with certain embodiments described herein. The arrows indicate that Si Kα₁(1.74 keV) x-rays (which are above the Mα edge of Hf) have an attenuation length in Hf of about 0.15 μm, Rh Lα (2.70 keV) x-rays (which are above the Mα edge of Hf) have an attenuation length in Hf of about 0.3 μm, and Cr Kα₁(5.42 keV) x-rays (which are above the Mα edge of Hf) have an attenuation length in Hf of about 1.7 μm. Therefore, x-rays with these three photon energies can be used in certain embodiments described herein to analyze different depths of a Hf sample.

FIGS. 5A-5D, 6, 7, 8A, and 8B relate to selecting probe depth by selecting at least one optimal x-ray energy in accordance with certain embodiments described herein.

FIG. 5A shows a plot of a parametric (and conservative) estimate of the inelastic mean free path (IMFP) of electrons as a function of electron kinetic energy in accordance with certain embodiments described herein. The curve and parametric equation of FIG. 5A has been referred to as a “universal curve” since it generally applies to electrons propagating many materials. This same parametric estimate of the inelastic mean free path of electrons as a function of electron kinetic energy is also included in FIGS. 5B-5D with regard to various photoelectrons.

FIG. 5B illustrates the selectable probing depth from Hf of certain embodiments described herein by showing the parametric inelastic mean free path (IMFP) of electrons as a function of electron kinetic energy with arrows denoting the energies of the Hf M₅(3d_5/2) photoelectrons generated by three x-ray lines (Si Kα₁; Rh Kα; Cr Kα₁) and a corresponding table of values. As seen in FIG. 4B, Si Kα₁(1.74 keV) x-rays generate 78 eV photoelectrons which have an IMFP of about 0.5 nm and a “5% penetration depth” (e.g., depth at which only 5% of the photoelectrons escape from the sample surface without an inelastic loss of energy) of 1.5 nm. FIG. 5B also shows that Rh Lα (2.67 keV) x-rays generate 1035 eV photoelectrons which have an IMFP of about 1.5 nm and a “5% penetration depth” of 4.5 nm. FIG. 5B also shows that Cr Kα₁(5.42 keV) x-rays generate 3753 eV photoelectrons which have an IMFP of about 3.1 nm and a “5% penetration depth” of 9.3 nm. Therefore, x-rays with these three photon energies can be used in certain embodiments described herein to analyze different depths of a Hf sample.

FIG. 5C illustrates the selectable probing depth from Al of certain embodiments described herein by showing the parametric inelastic mean free path of electrons as a function of electron kinetic energy with arrows denoting the energies of the Al K (is) photoelectrons and the Al L (2p) photoelectrons generated by three x-ray lines (Si Kα₁; Rh Kα; Cr Kα₁) and a corresponding table of values. As seen in FIG. 5C, Si Kα₁(1.74 keV) x-rays generate 180 eV photoelectrons which have an IMFP of about 0.8 nm and a “5% penetration depth” of 2.4 nm and generate 1622 eV photoelectrons which have an IMFP of about 2 nm and a “5% penetration depth” of 6 nm. FIG. 5C also shows that Rh Lα (2.70 keV) x-rays generate 1137 eV photoelectrons which have an IMFP of about 1.5 nm and a “5% penetration depth” of 4.5 nm, and generate 2579 eV photoelectrons which have an IMFP of about 2.8 nm and a “5% penetration depth” of 8.4 nm. FIG. 5C also shows that Cr Kα₁(5.42 keV) x-rays generate 3855 eV photoelectrons which have an IMFP of about 3.1 nm and a “5% penetration depth” of 9.3 nm, and generate 5297 eV photoelectrons which have an IMFP of about 3.7 nm and a “5% penetration depth” of 11.1 nm. Therefore, x-rays with these three photon energies can be used in certain embodiments described herein to analyze different depths of an Al sample.

FIG. 5D illustrates the selectable probing depth from Ti of certain embodiments described herein by showing the parametric inelastic mean free path of electrons as a function of electron kinetic energy with arrows denoting the energies of the Ti K (is) photoelectrons and the Ti L (2p) photoelectrons generated by three x-ray lines (Si Kα₁; Rh Kα; Cr Kα₁) and a corresponding table of values. As seen in FIG. 5D, Si Kα₁(1.74 keV) x-rays and Rh Lα (2.70 keV) x-rays do not generate photoelectrons since its energy (4.97 keV) is higher than that of the Si Kα₁and Rh Lα x-rays. FIG. 5D also shows that Si Kα₁(1.74 keV) x-rays generate 1286 eV photoelectrons which have an IMFP of about 1.6 nm and a “5% penetration depth” of 4.8 nm. FIG. 5D also shows that Rh Lα (2.70 keV) x-rays generate 2243 eV photoelectrons which have an IMFP of about 2.6 nm and a “5% penetration depth” of 7.8 nm. FIG. 5D also shows that Cr Kα₁(5.42 keV) x-rays generate 449 eV photoelectrons which have an IMFP of about 1 nm and a “5% penetration depth” of 3 nm, and generate 4961 eV photoelectrons which have an IMFP of about 3.5 nm and a “5% penetration depth” of 10.5 nm. Therefore, x-rays with these three photon energies can be used in certain embodiments described herein to analyze different depths of a Ti sample.

FIG. 6 shows a plot of the relative photoelectron intensity as a function of depth for Si 2p photoelectrons generated using various x-ray energies in accordance with certain embodiments described herein. For example, Si 2p photoelectrons excited by Mg Kα x-rays have a penetration depth (e.g., depth at which the x-rays have an intensity that equals 1/10 the incident intensity; denoted by the horizontal dotted line of FIG. 6) of 6 nm, Si 2p photoelectrons excited by Al Kα x-rays have a penetration depth of 7 nm, Si 2p photoelectrons excited by Ag Lα x-rays have a penetration depth of 13 nm, Si 2p photoelectrons excited by Cr Kα x-rays have a penetration depth of 22 nm, and Si 2p photoelectrons excited by Ga Kα x-rays have a penetration depth of 34 nm. While FIG. 6 shows that the photoelectrons have differing penetration depths depending on their energy, the probing depth shown in FIG. 6 is at least two times larger than the calculated values from the parametric inelastic mean free path of electrons as a function of electron energy shown in FIGS. 5A-5D.

FIG. 7 shows a plot of the inelastic mean free path of electrons in liquid water as a function of electron kinetic energy (from Emfietzoglou & Nikjoo, Rad. Res. 2007) in accordance with certain embodiments described herein. As seen in FIG. 7, in certain embodiments described herein, photoelectrons having various energies can provide depth-sensitive information from an interface comprising water.

FIG. 8A schematically illustrate the Fe 2p photoemission peak intensity as a function of x-ray energy from a silicon substrate with a 1-nm-thick Fe layer and a carbon overlayer having three thicknesses of 10 nm, 20 nm, and 30 nm (from Stafanos et al., Nature Scientific Report, 2013). The Fe 2p photoemission peak intensity is reduced for larger thicknesses of the carbon overlayer. FIG. 8B shows a simulation from the “NIST Database for the Simulation of Electron Spectra for Surface Analysis (SESSA).” The electron inelastic mean free path is proportional to E^0.8, and the proportionality of the photoelectron cross section as a function of the photon energy hv is in a range of about (hv)⁻²to (hv)⁻³.

Example Configurations

FIGS. 9-11 relate to advantages of small focus spot sizes in accordance with certain embodiments described herein. Certain embodiments described herein provide small focus spot sizes which can provide one or more of the following advantages: small spot analysis with simple sample preparation; imaging/mapping; atmospheric pressure XPS; in situ, in vitro, and/or in operando analysis.

FIG. 9A schematically illustrates a portion of an example system 10 utilizing small focus enabling atmospheric pressure XPS in accordance with certain embodiments described herein. For example, the system 10 of FIG. 9A can be used to perform XPS at 20 Torr water vapor pressure (e.g., about equilibrium water vapor pressure at 20 degrees Celsius). In certain embodiments, the example system 10 comprises at least one x-ray source 20 comprising a plurality of x-ray sub-sources 26 on or embedded in at least one thermally conductive substrate 25, the x-ray sub-sources comprising a plurality of materials configured to generate x-rays in response to electron bombardment. The example system 10 further comprises a plurality of x-ray optical trains 90, each optical train 90 comprising at least one collimating x-ray optical element 30 (e.g., mirror; mirror lens), at least one energy-selective optical element 40 (e.g., x-ray monochromator; multilayer; multilayer-coated optical substrate), and at least one focusing x-ray optical element 50 (e.g., mirror; mirror lens). As described herein, the plurality of x-ray optical trains 90 is configured to be positioned to direct at least some of the x-rays emitted from a selected one of the plurality of x-ray sub-sources 26 to irradiate a sample 60.

As schematically illustrated by FIG. 9A, the example system 10 further comprises a sample chamber 100 configured to contain a sample 60 at a sample pressure, a first chamber 110 and a first electrostatic lens 111 contained in the first chamber 110 at a first pressure, and a second chamber 120 and a second electrostatic lens 121 contained in the second chamber 120 at a second pressure. The sample chamber 100 and the first chamber 110 are separated from one another by a first wall 104 having a first aperture 102 configured to allow at least some photoelectrons from the sample 60 to propagate from the sample chamber 100 to the first chamber 110. The first chamber 110 and the second chamber 120 are separated from one another by a second wall 114 having a second aperture 112 configured to allow at least some of the photoelectrons in the first chamber to propagate to the second chamber 120. The second chamber 120 is separated from an energy dispersive electron energy analyzer (e.g., a hemispherical analyzer; not shown) by a third wall 124 having a third aperture 122 configured to allow at least some of the photoelectrons in the second chamber to propagate to the energy dispersive electron energy analyzer.

As schematically illustrated by FIG. 9A, the at least one x-ray source 20 and the plurality of x-ray optical trains 90 are configured to irradiate the sample 60 with a small focus x-ray spot impinging the sample 60 (e.g., a third x-ray beam 52 having a spot size or largest dimension in a surface plane of the sample 60 in a range from 10 μm to 200 μm; 15 μm or less; 20 μm or less; 100 μm or less). The sample pressure P₀within the sample chamber 100 can be in a range of 20 mbar to 1 bar (e.g., in a range of 100 mbar to 1 bar). The first chamber 110 containing the first electrostatic lens 111 can be pumped (e.g., differentially pumped) to a pressure P₁less than P₀, and the second chamber 120 containing the second electrostatic lens 121 can be pumped (e.g., differentially pumped) to a pressure P₂less than P₁. In certain embodiments, each of the first aperture 102, the second aperture 112, and the third aperture 122 has a size (e.g., a largest lateral dimension parallel to the

respective wall

104, 114, 124) configured to allow at least some of the photoelectrons to propagate therethrough while preventing unwanted pressure increases in the first and

second chambers

110, 120 due to gas from the sample chamber 100 entering the first chamber 110 and gas from the first chamber 110 entering the second chamber 120 (e.g., sizes in a range from m to 200 μm; 15 μm or less; 20 μm or less; 100 μm or less). The first electrostatic lens 111 is configured to receive photoelectrons from the first aperture 102 and to focus at least some of the photoelectrons through the second aperture 112, and the second electrostatic lens 121 is configured to receive photoelectrons from the second aperture 112 and to focus at least some of the photoelectrons through the third aperture 122. In this way, certain embodiments described herein can provide a 1000X increase in detection efficiency. FIGS. 9B and 9C show an example electrostatic lens assembly and an example APXPS system (located at the Advanced Light Source), respectively, which can be configured to be used by the system 10 of certain embodiments described herein.

FIG. 10 shows example advantages of ambient pressure XPS in accordance with certain embodiments described herein. FIG. 11 shows the equilibrium vapor pressure of water as a function of temperature. The inelastic mean free path of electrons with 100 eV kinetic energy in 1 Torr water vapor is about 1 mm, so ambient pressure XPS can be performed in accordance with certain embodiments described herein.

Example Configuration

Table 1 lists various components of an example configuration of an APXPS system in accordance with certain embodiments described herein. The example configuration can be used in studying various processes and/or phenomena at liquid-solid interfaces (e.g., corrosion of metallic biomaterials, such as medical implants and medical devices; surface chemistry under realistic, ambient pressure environments).

TABLE 1

X-ray source	Target (sub-sources): X-ray target comprising a plurality of x-ray sub-
	sources (e.g., micro-sized) comprising (i) at least one Rh sub-source
	embedded in a diamond substrate, (ii) at least one Cr sub-source
	embedded in the diamond substrate, and (iii) single crystal SiC sub-
	source in thermal contact with the diamond substrate (e.g., positioned
	next to the other sub-sources.
	Source size: 10 microns in the dispersive direction of the x-ray crystal
	monochromator achieved with 6-degree take-off angle of an electron
	beam footprint of 100 microns and 300 microns in the orthogonal
	direction (e.g., corresponding to the nondispersive direction of the x-ray
	crystal monochromator).
	X-ray source power and electron acceleration voltage: 300 W and 10-20
	kVp.
	X-ray spectral change: software control of motorized translation of the
	target.
Paraboloidal	Surface figure: Three sets of two each axially symmetric paraboloidal
Mirror Lenses	surfaces with parameters optimized for the three x-ray energies from the
	Rh, Cr, and SiC sub-sources.
	Surface figure error: better than 20 μrad.
	Mirror surface coating: Pt for Cr Kα₁and for Si Kα₁; Pd for Rh Lα₁.
Resolution (X-	Less than 0.7 eV, which is comparable to natural line widths (e.g., life
ray line width)	time broadening) of core levels.
Photon flux	4 × 10⁹photons/second for a spot of 100 micron diameter.
Focus spot size	20 microns to 200 microns.
at sample
Detector	HIPPIII electron energy analyzer available from Scienta-Omicron GmbH
	of Taunusstein Germany.
	Kinetic energies of up to 6 keV; Analyzer allows ambient pressure up to
	100 mbar with 100 micron diameter entrance aperture.

The example configuration compatible with certain embodiments described herein can be characterized by a figure of merit (e.g., for comparison to other APXPS systems. For example, the figure of merit for comparing different APXPS systems for studying solid-liquid interfaces of biomaterials with depth profiling can be expressed as the intensity of the photoelectron peak (Ii) for an element of interest i at a depth (z) from the surface from where photoelectrons are emitted. The intensity Ii is dependent on the photon flux (F) incident on the interface, the average atomic concentration of element i (Ni), the photoelectron cross-section of element i related to the mentioned peak (σi), the inelastic mean free path (Λ_i) of photoelectrons from element i related to the mentioned peak, and the solid angle of the acceptance (Ω(hv)) of the analyzer (approximately inversely proportional to hv). In the simplest form, Ii=F*Ni*σi*exp(−z/Λ_i)*Ω(hv) K_hv, where K_hvcorresponds to all other factors (which can be assumed to remain constant for a specific photon energy during the measurement).

In certain embodiments described herein, the example configuration provides five times more flux at the sample than currently marketed APXPS systems. For example, a laboratory-based APXPS system marketed by SPECS Surface Nano Analysis GMBH of Berlin Germany uses Al Kα x-rays at 1.487 keV, which are not suitable for studying solid-liquid interfaces of in-vitro biomaterials (e.g., medical implants) due to the limited IMFP of the photoelectrons. For another example, a Ga Kα (9.3 keV) x-ray source using a Ga liquid jet anode, marketed by Scienta-Omicron GmbH of Taunusstein Germany), suffers from lower cross sections and thus lower detection efficiencies (e.g., by a factor of 6, as compared to using Cr Kα x-rays). In addition, the accepted solid angle of the analyzer for 9.3 keV photoelectrons, as compared to 5.4 keV photoelectrons is about 60% less due to larger retardation used by the analyzer which reduces the solid angle. For still another example, a dual Al Kα and Cr Kα x-ray source marketed as “Phi Quantes” by Ulvac-Phi, Inc. of Kanagawa Japan, utilizes Rowland circle geometry Bragg crystals for monochromatization, which provides high resolution at the expense of lower flux and larger divergence angle.

In certain embodiments described herein, the example configuration provide three different x-ray energies, thereby allowing systematic study of depth profiling and optimizing the performance for signal strength, with a figure of merit about 50 times larger than currently marketed APXPS systems (e.g., equal to about 5 (flux)×6 (cross-section)×1.6 (acceptance solid angle)). As a result, the example configuration can provide higher flux (e.g., by a factor of five) with significantly higher cross sections and the ability for optimization depending on the element of interest and various thicknesses of the liquid and passivation layer of the sample.

Conditional language, such as “can,” “could,” “might,” or “may,” unless specifically stated otherwise, or otherwise understood within the context as used, is generally intended to convey that certain embodiments include, while other embodiments do not include, certain features, elements, and/or steps. Thus, such conditional language is not generally intended to imply that features, elements, and/or steps are in any way required for one or more embodiments.

Conjunctive language such as the phrase “at least one of X, Y, and Z,” unless specifically stated otherwise, is to be understood within the context used in general to convey that an item, term, etc. may be either X, Y, or Z. Thus, such conjunctive language is not generally intended to imply that certain embodiments require the presence of at least one of X, at least one of Y, and at least one of Z.

Language of degree, as used herein, such as the terms “approximately,” “about,” “generally,” and “substantially,” represent a value, amount, or characteristic close to the stated value, amount, or characteristic that still performs a desired function or achieves a desired result. For example, the terms “approximately,” “about,” “generally,” and “substantially” may refer to an amount that is within ±10% of, within ±5% of, within ±2% of, within ±1% of, or within ±0.1% of the stated amount. As another example, the terms “generally parallel” and “substantially parallel” refer to a value, amount, or characteristic that departs from exactly parallel by ±10 degrees, by ±5 degrees, by ±2 degrees, by ±1 degree, or by ±0.1 degree, and the terms “generally perpendicular” and “substantially perpendicular” refer to a value, amount, or characteristic that departs from exactly perpendicular by ±10 degrees, by ±5 degrees, by ±2 degrees, by ±1 degree, or by ±0.1 degree.

Various configurations have been described above. Although this invention has been described with reference to these specific configurations, the descriptions are intended to be illustrative of the invention and are not intended to be limiting. Various modifications and applications may occur to those skilled in the art without departing from the true spirit and scope of the invention. Thus, for example, in any method or process disclosed herein, the acts or operations making up the method/process may be performed in any suitable sequence and are not necessarily limited to any particular disclosed sequence. Features or elements from various embodiments and examples discussed above may be combined with one another to produce alternative configurations compatible with embodiments disclosed herein. Various aspects and advantages of the embodiments have been described where appropriate. It is to be understood that not necessarily all such aspects or advantages may be achieved in accordance with any particular embodiment. Thus, for example, it should be recognized that the various embodiments may be carried out in a manner that achieves or optimizes one advantage or group of advantages as taught herein without necessarily achieving other aspects or advantages as may be taught or suggested herein.

Claims

What is claimed is:

1. A system for x-ray analysis, the system comprising:

at least one x-ray source configured to emit x-rays, the at least one x-ray source comprising at least one silicon carbide sub-source on or embedded in at least one thermally conductive substrate and configured to generate the x-rays in response to electron bombardment of the at least one silicon carbide sub-source, at least some of the x-rays emitted from the at least one x-ray source comprising Si x-ray emission line x-rays;

an electron beam source configured to bombard the at least one silicon carbide sub-source with an electron beam having an electron energy in a range of 5 keV to 30 keV; and

at least one x-ray optical train configured to receive the Si x-ray emission line x-rays and to irradiate a sample with at least some of the Si x-ray emission line x-rays.

2. The system of claim 1, wherein the Si x-ray emission line x-rays comprise Si Kai x-ray emission line x-rays.

3. The system of claim 1, wherein the at least one x-ray source further comprises at least one second sub-source on or embedded in the at least one thermally conductive substrate, the at least one second sub-source configured to generate x-rays in response to electron bombardment of the at least one second sub-source, the at least one second sub-source comprising at least one material different from silicon carbide, at least some of the x-rays emitted from the at least one x-ray source comprising x-ray emission line x-rays of the at least one material.

4. The system of claim 3, wherein the at least one material is selected from the group consisting of: Al, Ag, Rh, Cr, Au, Ti, Fe, and Mo and the x-ray emission line x-rays of the at least one material comprise at least one of: Al Kα x-ray emission line x-rays; Ag Lα x-ray emission line x-rays; Rh Lα x-ray emission line x-rays; Cr Kα₁x-ray emission line x-rays; Au Lα x-ray emission line x-rays; Ti Kα x-ray emission line x-rays; Fe Kα x-ray emission line x-rays; Mo Lα x-ray emission line x-rays; Mo Lβ₁x-ray emission line x-rays, and Mo Lβ₂x-ray emission line x-rays.

5. The system of claim 3, wherein the at least one x-ray optical train comprises a plurality of x-ray optical trains configured to be moved relative to the at least one x-ray source and/or the sample such that a selected x-ray optical train of the plurality of x-ray optical trains is positioned to receive the x-rays emitted from the at least one x-ray source and to irradiate the sample with an x-ray beam comprising at least some of the received x-rays emitted from the at least one x-ray source.

6. The system of claim 5, wherein a first x-ray optical train of the plurality of x-ray optical trains is configured for conversion of the Si x-ray emission line x-rays into the x-ray beam and a second x-ray optical train of the plurality of x-ray optical trains is configured for conversion of the x-ray emission line x-rays of the at least one material into the x-ray beam.

7. The system of claim 1, wherein the at least one optical train is configured to focus at least some of the Si x-ray emission line x-rays at the sample.

8. The system of claim 7, wherein the at least one optical train comprises:

at least one first x-ray optical element configured to receive at least some of the x-rays emitted from the at least one x-ray source and to generate a collimated first x-ray beam;

at least one second x-ray optical element configured to receive at least a portion of the collimated first x-ray beam and to emit a monochromatic second x-ray beam comprising the Si x-ray emission line x-rays; and

at least one third x-ray optical element configured to receive at least a portion of the monochromatic second x-ray beam and to focus a third x-ray beam at the sample.

9. The system of claim 8, wherein the at least one first x-ray optical element comprises at least one axially symmetric x-ray collimating optic.

10. The system of claim 8, wherein the at least one second x-ray optical element comprises at least one x-ray crystal monochromator.

11. The system of claim 8, wherein the at least one third x-ray optical element comprises at least one axially symmetric x-ray focusing optic.

12. The system of claim 8, wherein the system further comprises at least one detector subsystem configured to detect x-rays and/or electrons emitted from the sample in response to the sample being irradiated by the third x-ray beam.

13. The system of claim 1, wherein the system comprises one or more of: an x-ray photoelectron spectroscopy (XPS) system, a photoemission electron microscopy (PEEM) system, an angle-resolved photoemission spectroscopy (ARPES) system, an ambient-pressure x-ray photoelectron spectroscopy (APXPS) system, an x-ray fluorescence (XRF) system, an x-ray emission (XES) system, an x-ray phase contrast imaging system, and a computed tomography imaging system.

14. An x-ray source comprising:

at least one electron source configured to generate at least one electron beam having an electron energy in a range of 5 keV to 30 keV; and

at least one target comprising:

at least one thermally conductive substrate; and

a plurality of sub-sources on or embedded in at least a portion of the at least one thermally conductive substrate, the sub-sources separate from one another and in thermal communication with the at least one thermally conductive substrate, at least one sub-source of the plurality of the sub-sources comprising silicon carbide and configured to emit Si x-ray emission line x-rays in response to bombardment by the at least one electron beam.

15. The x-ray source of claim 14, further comprising an x-ray window configured to allow at least some of the Si x-ray emission line x-rays to propagate from a first region within the x-ray source and containing the at least one target, through the x-ray window, to a second region outside the x-ray source.

16. The x-ray source of claim 14, wherein the at least one electron source comprises at least one electron gun column configured to generate and direct the at least one electron beam to bombard at least one selected sub-source of the plurality of sub-sources.

17. The x-ray source of claim 14, wherein the at least one thermally conductive substrate comprises diamond and the at least last one sub-source comprises a silicon carbide layer sputtered onto the at least one thermally conductive substrate.

18. The x-ray source of claim 14, wherein the plurality of sub-sources further comprises at least one second sub-source comprising at least one target material different from silicon carbide and configured to emit x-ray emission line x-rays of the at least one target material in response to bombardment by the at least one electron beam.

19. The x-ray source of claim 18, wherein the at least one target material is selected from the group consisting of: Al, Ag, Rh, Cr, Au, Ti, Fe, and Mo.

20. A method of x-ray analysis, the method comprising:

bombarding a target material comprising silicon carbide with electrons with kinetic energy in a range of 5 keV to 30 keV;

emitting Si x-ray emission line x-rays from the target material;

irradiating a sample with at least some of the Si x-ray emission line x-rays; and

detecting x-rays and/or electrons emitted from the sample.

21. The method of claim 20, wherein irradiating the sample with at least some of the Si x-ray emission line x-rays comprises using at least one x-ray optical train to receive the Si x-ray emission line x-rays and to direct the at least some of the Si x-ray emission line x-rays to irradiate the sample.

22. The method of claim 20, further comprising:

bombarding at least one second target material different from silicon carbide with electrons;

emitting x-ray emission line x-rays from the at least one second target material; and

irradiating the sample with at least some of the x-ray emission line x-rays from the at least one second target material.

23. The method of claim 22, wherein irradiating the sample with at least some of the x-ray emission line x-rays from the at least one second target material comprises using at least one x-ray optical train to receive the x-ray emission line x-rays from the at least one second target material and to direct the at least some of the x-ray emission line x-rays from the at least one second target material to irradiate the sample.

24. An x-ray illumination system comprising:

at least one x-ray source comprising at least a first x-ray sub-source and a second x-ray sub-source, the first and second x-ray sub-sources on or embedded in at least one thermally conductive substrate, the first x-ray sub-source comprising a first material configured to generate first x-rays in response to electron bombardment of the first x-ray sub-source, the second x-ray sub-source comprising a second material different from the first material, the second material configured to generate second x-rays in response to electron bombardment of the second x-ray sub-source; and

a plurality of x-ray optical trains comprising:

a first optical train comprising at least one first collimating x-ray mirror, at least one first energy-selective x-ray monochromator or multilayer, and at least one first focusing x-ray mirror, the first optical train configured to be positioned to direct at least some of the first x-rays emitted from the first x-ray sub-source to irradiate a sample; and

a second optical train comprising at least one second collimating x-ray mirror, at least one second energy-selective x-ray monochromator or multilayer, and at least one second focusing x-ray mirror, the second optical train configured to be positioned to direct at least some of the second x-rays emitted from the second x-ray sub-source to irradiate the sample.

25. The system of claim 24, wherein the at least one x-ray source is configured to bombard a selected sub-source of the first and second x-ray sub-sources with at least one electron beam by moving, relative to one another, one or both of the at least one electron beam and the at least one substrate.

26. The system of claim 24, wherein the at least one x-ray sub-source comprises a third x-ray sub-source on or embedded in the at least one thermally conductive substrate, the third x-ray sub-source comprising a third material different from the first material and the second material, the third material configured to generate third x-rays in response to electron bombardment of the third x-ray sub-source, the plurality of x-ray optical trains further comprising a third optical train comprising at least one third collimating x-ray mirror, at least one third energy-selective x-ray monochromator or multilayer, and at least one third focusing x-ray mirror, the third optical train configured to be positioned to direct at least some of the third x-rays emitted from the third x-ray sub-source to irradiate the sample.

27. The system of claim 24, further comprising at least one controllably movable stage mechanically coupled to the plurality of x-ray optical trains, the at least one stage configured to controllably position the plurality of x-ray optical trains such that a selected one x-ray optical train of the plurality of x-ray optical trains is positioned to receive x-rays from the at least one x-ray source and to direct at least some of the received x-rays to irradiate the sample.

28. The system of claim 27, wherein the at least one controllably movable stage consists essentially of a single controllably movable stage.

29. The system of claim 27, wherein the at least one controllably movable stage comprises a first stage, a second stage, and a third stage, the first stage mechanically coupled to the first and second collimating x-ray mirrors, the second stage mechanically coupled to the first and second energy-selective x-ray monochromators or multilayers, and the third stage mechanically coupled to the first and second focusing x-ray mirrors, the first, second, and third stages configured to be controlled independently from one another.

30. An x-ray photoelectron spectroscopy system comprising:

at least one x-ray source comprising a plurality of x-ray sub-sources on or embedded in at least one thermally conductive substrate, the x-ray sub-sources comprising a plurality of materials configured to generate x-rays in response to electron bombardment;

a plurality of x-ray optical trains, each optical train comprising at least one collimating x-ray optical element, at least one energy-selective optical element, and at least one focusing x-ray optical element, the plurality of x-ray optical trains configured to be positioned to direct at least some of the x-rays emitted from a selected one of the plurality of x-ray sub-sources to irradiate a sample;

a sample chamber configured to contain the sample at a sample pressure;

a first chamber and a first electrostatic lens contained in the first chamber at a first pressure less than the sample pressure, the sample chamber and the first chamber separated from one another by a first wall having a first aperture configured to allow at least some photoelectrons from the sample to propagate from the sample chamber to the first chamber; and

a second chamber and a second electrostatic lens contained in the second chamber at a second pressure less than the first pressure, the first chamber and the second chamber separated from one another by a second wall having a second aperture configured to allow at least some of the photoelectrons in the first chamber to propagate to the second chamber.

31. The system of claim 30, wherein the sample pressure is in a range of 20 mbar to 1 bar.

32. The system of claim 30, wherein the first electrostatic lens is configured to receive photoelectrons from the first aperture and to focus at least some of the photoelectrons from the first aperture through the second aperture.

33. The system of claim 30, further comprising an energy dispersive electron energy analyzer separated from the second chamber by a third wall having a third aperture configured to allow at least some of the photoelectrons in the second chamber to propagate to the energy dispersive electron energy analyzer.

34. The system of claim 33, wherein the second electrostatic lens is configured to receive photoelectrons from the second aperture and to focus at least some of the photoelectrons from the second aperture through the third aperture.