US10395703B2 - Column decoder of memory device - Google Patents
Column decoder of memory device Download PDFInfo
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- US10395703B2 US10395703B2 US16/045,772 US201816045772A US10395703B2 US 10395703 B2 US10395703 B2 US 10395703B2 US 201816045772 A US201816045772 A US 201816045772A US 10395703 B2 US10395703 B2 US 10395703B2
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/08—Address circuits; Decoders; Word-line control circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/10—Decoders
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1006—Data managing, e.g. manipulating data before writing or reading out, data bus switches or control circuits therefor
- G11C7/1012—Data reordering during input/output, e.g. crossbars, layers of multiplexers, shifting or rotating
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1006—Data managing, e.g. manipulating data before writing or reading out, data bus switches or control circuits therefor
Definitions
- the invention relates a decoding technique of a memory device and more particularly, to a column decoder of a memory device.
- a memory device may select a memory cell in a memory array by a column decoder and a row decoder, so as to perform a reading operation, a verification operation or a programming operation on the selected memory cell.
- a control logic circuit in the memory device successively accumulates a column address of the memory cell, so as to perform a corresponding operation on a predetermined block in the memory array.
- a conventional column decoder may decode the column address into first decoded data to third decoded data, thereby controlling first to third selection circuits therein respectively. Additionally, during the process where the successively incremental column address is processed, multiple simultaneous transitions usually occur to the decoded data which is decoded by the conventional column decoder. For instance, taking the conventional column decoder as an example, during the process where the column address is gradually accumulated one by one from ⁇ 000000 ⁇ to ⁇ 111111 ⁇ , the number of times of the simultaneous transitions occurring to the first to the third decoded data is 4, and the number of times of the simultaneous transitions occurring to two of the first to the third decoded data is 12.
- the invention provides a column decoder of a memory device, in which a first decoder of a decoding circuit may decode a first sub-address into first decoded data based on a first predetermined bit of a second sub-address. Thereby, power consumption of the column decoder may be reduced, and a decoding speed and reliability of the column decoder may be increased.
- a column decoder of a memory device of the invention includes a first selection circuit, a second selection circuit and a decoding circuit.
- the decoding circuit includes a first decoder.
- the first selection circuit and the second selection circuit are electrically connected in cascade with a memory array in the memory device.
- the decoding circuit is electrically connected to the first selection circuit and the second selection circuit and receives a column address including a first sub-address and a second sub-address.
- the decoding circuit generates first decoded data for controlling the first selection circuit based on the first sub-address and generates second decoded data for controlling the second selection circuit based on the second sub-address.
- the first decoder decodes the first sub-address into the first decoded data, and the first decoded data is reversed in response to a change of a first predetermined bit of the second sub-address.
- the column decoder of the memory device further includes a third selection circuit.
- the third selection circuit is electrically connected to the decoding circuit and electrically connected to the first selection circuit through the second selection circuit.
- the column address further includes a third sub-address, and the first predetermined bit is a least significant bit of the second sub-address.
- the decoding circuit further generates third decoded data for controlling the third selection circuit based on the third sub-address.
- the decoding circuit further includes a second decoder and a third decoder. The second decoder decodes the second sub-address into the second decoded data.
- the third decoder decodes the third sub-address into the third decoded data.
- the decoding circuit of the column decoder of the invention can receive the column address including the first sub-address and the second sub-address.
- the first decoder of the decoding circuit can decode the first sub-address into the first decoded data, and the first decoded data is reversed in response to the change of the first predetermined bit of the second sub-address.
- FIG. 1 is a schematic diagram illustrating a memory device according to an embodiment of the invention.
- FIG. 2 is a schematic diagram illustrating a part of the column decoder according to an embodiment of the invention.
- FIG. 3 illustrates a truth table of the decoding circuit according to an embodiment of the invention.
- FIG. 4 is a schematic diagram illustrating the first decoder according to an embodiment of the invention.
- FIG. 5 illustrates a truth table for describing the first decoder according to an embodiment of the invention.
- FIG. 6 is a schematic diagram illustrating the first decoder according to another embodiment of the invention.
- FIG. 7 illustrates a truth table for describing the first decoder according to another embodiment of the invention.
- FIG. 8 is a schematic diagram illustrating a part of the column decoder according to another embodiment of the invention.
- FIG. 9 illustrates a truth table of the decoding circuit according to another embodiment of the invention.
- FIG. 10 is a schematic diagram illustrating the second decoder according to an embodiment of the invention.
- FIG. 11 is a schematic diagram illustrating the second decoder according to another embodiment of the invention.
- FIG. 1 is a schematic diagram illustrating a memory device according to an embodiment of the invention.
- a memory device 100 includes a memory array 110 and a column decoder 120 , and the column decoder 120 includes a decoding circuit 130 and first to third selection circuits 141 to 143 .
- the first to the third selection circuits 141 to 143 are electrically connected in cascade with the memory array 110 , so as to be arranged in a hierarchical structure.
- the first selection circuit 141 includes N 2 selectors (e.g., selectors 151 to 15 N and 161 to 16 N), and each of the N 2 selectors is electrically connected to N local bit lines.
- the second selection circuit 142 includes N selectors 171 to 17 N, and each of the selectors 171 to 17 N is electrically connected to the first selection circuit 141 through N global bit lines.
- the third selection circuit 143 includes a selector 180 .
- the selector 180 is electrically connected to a data line DL 1
- the selector 180 is electrically connected to the second selection circuit 142 through N local data lines.
- each selector in the first to the third selection circuits 141 to 143 includes N switches. Therein, N is a positive integer, and the number of the switches may be determined according to a selected decoding scheme.
- the decoding circuit 130 decodes the column address A[3K ⁇ 1:0] into first to third decoded data X[N ⁇ 1:0], Y[N ⁇ 1:0] and Z[N ⁇ 1:0], each of which has N bits for controlling the first to the third selection circuits 141 to 143 respectively.
- each selector of the first selection circuit 141 is controlled by the first decoded data X[N ⁇ 1:0].
- Each selector of the second selection circuit 142 is controlled by the second decoded data Y[N ⁇ 1:0].
- the selector 180 of the third selection circuit 143 is controlled by the third decoded data Z[N ⁇ 1:0].
- the first to the third selection circuits 141 to 143 may select a local bit line from the N 3 local bit lines connected therewith and conduct the selected local bit line to the data line DL 1 .
- the memory device 100 may conduct the data line DL 1 to a sensing amplifier 102 or a voltage generator 103 in response to a change of a selection switch 101 .
- the selected local bit line may be further conducted to the sensing amplifier 102 or the voltage generator 103 through the switching of the selection switch 101 , such that the memory device 100 may further perform a predetermined operation (e.g., a reading operation, a verification operation or a programming operation) on the memory array 110 .
- a predetermined operation e.g., a reading operation, a verification operation or a programming operation
- the selected local bit line when the selected local bit line is conducted to the voltage generator 103 through the selection switch 101 , the selected local bit line may be maintained at a high voltage level, such that the memory device 100 may perform a programming operation on the memory array 110 .
- the sensing amplifier 102 when the selected local bit line is conducted to the sensing amplifier 102 through the selection switch 101 , the sensing amplifier 102 may compare a voltage from the selected local bit line with a reference voltage VR 1 , such that the memory device 100 may perform a reading operation or a verification operation on the memory array 110 .
- the decoding circuit 130 includes a first decoder 211 , a second decoder 212 and a third decoder 213 .
- Each selector (e.g., each of the selectors 151 to 154 ) of the first selection circuit 141 includes 4 switches 221 to 224 .
- Each selector (e.g., the selector 171 ) of the second selection circuit 142 includes 4 switches 231 to 234 .
- the selector 180 of the third selection circuit 143 includes 4 switches, where only a switch 241 of the selector 180 is illustrated in FIG. 2 .
- a column address A[5:0] received by the decoding circuit 130 includes a first sub-address A[1:0], a second sub-address A[3:2] and a third sub-address A[5:4]. Additionally, the decoding circuit 130 generates first decoded data X[3:0] for controlling the first selection circuit 141 based on the first sub-address A[1:0], generates second decoded data Y[3:0] for controlling the second selection circuit 142 based on the second sub-address A[3:2] and generates third decoded data Z[3:0] for controlling the third selection circuit 143 based on the third sub-address A[5:4].
- the first decoder 211 further reverses the first decoded data X[3:0] in response to a change of a first predetermined bit A 2 of the second sub-address A[3:2].
- the first predetermined bit A 2 is a least significant bit of the second sub-address A[3:2].
- the second decoder 212 decodes the second sub-address A[3:2] into the second decoded data Y[3:0].
- the third decoder 213 decodes the third sub-address A[5:4] into the third decoded data Z[3:0].
- FIG. 3 illustrates a truth table of the decoding circuit according to an embodiment of the invention.
- a bit value of the column address A[5:0] is gradually accumulated one by one from ⁇ 000000 ⁇ to ⁇ 111111 ⁇ .
- the first decoder 211 may decode and obtain different first decoded data X[3:0] based on the same first sub-address A[1:0].
- the first decoded data X[3:0] decoded and obtained by the first decoder 211 is ⁇ 0001 ⁇ , ⁇ 0010 ⁇ , ⁇ 0100 ⁇ and ⁇ 1000 ⁇ respectively.
- the first decoded data X[3:0] decoded and obtained by the first decoder 211 is ⁇ 1000 ⁇ , ⁇ 0100 ⁇ , ⁇ 0010 ⁇ and ⁇ 0001 ⁇ respectively.
- the first decoded data X[3:0] may be reversed in response to a change of a state of the first predetermined bit A 2 .
- the first decoder 211 reverses a bit sequence of the first decoded data X[3:0] in the period T 41 .
- the first predetermined bit A 2 is ⁇ 0 ⁇
- the first decoded data X[3:0] is ⁇ 0001 ⁇ , ⁇ 0010 ⁇ , ⁇ 0100 ⁇ and ⁇ 1000 ⁇ respectively.
- the first predetermined bit A 2 is ⁇ 1 ⁇
- the first decoder 211 reverses the first decoded data X[3:0], such that the first decoded data X[3:0] is ⁇ 1000 ⁇ , ⁇ 0100 ⁇ , ⁇ 0010 ⁇ and ⁇ 0001 ⁇ respectively.
- the first to the third decoded data X[3:0], Y[3:0] and Z[3:0] are not transited at the same time, and the second decoded data Y[3:0] and the third decoded data Z[3:0] are transited simultaneously only at transient points P 30 to P 33 .
- each selector e.g., the selector 171
- the selector 180 of the third selection circuit 143 may also simultaneously switch two switches therein.
- the column decoder 120 of the embodiment illustrated in FIG. 2 may prevent the first to the third decoded data from being simultaneously transited and may contribute to reducing the number of times that two of the first to the third decoded data are transited at the same time.
- the number of the switches in the first to the third selection circuits 141 to 143 whose states are simultaneously switched may be significantly reduced, so as to reduce switching loss of the first to the third selection circuits 141 to 143 .
- power consumption of the column decoder 120 may be reduced, and a decoding speed of the column decoder 120 may be increased.
- the column decoder 120 can be prevented from being failed, which contributes to increasing reliability of the column decoder 120 .
- FIG. 4 is a schematic diagram illustrating the first decoder according to an embodiment of the invention.
- the first decoder 211 includes a first inverter 411 and a second inverter 412 , first to fourth multiplexers 421 to 424 and first to fourth AND gates 431 to 434 .
- the first inverter 411 receives a first bit A 0 of the first sub-address A[1:0].
- the first and the second multiplexers 421 and 422 respectively receive the first bit A 0 and an output bit of the first inverter 411 .
- the second inverter 412 receives a second bit A 1 of the first sub-address A[1:0].
- the third and the fourth multiplexers 423 and 424 respectively receive the second bit A 1 and an output bit of the second inverter 412 .
- Each of the first to the fourth multiplexers 421 to 424 is controlled by the first predetermined bit A 2 . Thereby, output bits of the first and the second multiplexers 421 and 422 may be inverted to each other, output bits of the third and the fourth multiplexers 423 and 424 may be inverted to each other.
- the first AND gate 431 is electrically connected to an output terminal of the first multiplexer 421 and an output terminal of the third multiplexer 423 and generates a bit X 0 of the first decoded data X[3:0].
- the second AND gate 432 is electrically connected to an output terminal of the second multiplexer 422 and the output terminal of the third multiplexer 423 and generates a bit X 1 of the first decoded data X[3:0].
- the third AND gate 433 is electrically connected to the output terminal of the first multiplexer 421 and the output terminal of the fourth multiplexer 424 and generates a bit X 2 of the first decoded data X[3:0].
- the fourth AND gate 434 is electrically connected to the output terminal of the second multiplexer 422 and the output terminal of the fourth multiplexer 424 and generates a bit X 3 of the first decoded data X[3:0].
- FIG. 5 illustrates a truth table for describing the first decoder according to an embodiment of the invention, in which B 0 and B 1 respectively represent the output bits of the second and the fourth multiplexers 422 and 424 .
- the first to the fourth multiplexers 421 to 424 are inserted between the first sub-address A[1:0] and the first to the fourth AND gates 431 to 434 .
- the first to the fourth multiplexers 421 to 424 may adjust the output bits thereof in response to the first predetermined bit A 2 , and the first to the fourth AND gates 431 to 434 may generate the first decoded data X[3:0] in response to the output bits of the first to the fourth multiplexers 421 to 424 .
- the first predetermined bit A 2 may be regarded as reversed information of the first decoder 211 .
- the first decoded data X[3:0] may be ⁇ 0001 ⁇ , ⁇ 0010 ⁇ , ⁇ 0100 ⁇ and ⁇ 1000 ⁇ respectively.
- the first decoded data X[3:0] may be ⁇ 1000 ⁇ , ⁇ 0100 ⁇ , ⁇ 0010 ⁇ and ⁇ 0001 ⁇ respectively.
- FIG. 6 is a schematic diagram illustrating the first decoder according to another embodiment of the invention.
- the first decoder 211 includes first and second XNOR gates 611 and 612 , first and second inverters 621 and 622 and first to fourth AND gates 631 to 634 .
- the first XNOR gate 611 receives the first bit A 0 of the first sub-address A[1:0] and the first predetermined bit A 2 .
- the second XNOR gate 612 receives the second bit A 1 of the first sub-address A[1:0] and the first predetermined bit A 2 .
- the first inverter 621 is electrically connected to an output terminal of the first XNOR gate 611 .
- the second inverter 622 is electrically connected to an output terminal of the second XNOR gate 612 .
- the first AND gate 631 is electrically connected to the output terminal of the first XNOR gate 611 and the output terminal of the second XNOR gate 612 .
- the second AND gate 632 is electrically connected to the output terminal of the second XNOR gate 612 and an output terminal of the first inverter 621 .
- the third AND gate 633 is electrically connected to the output terminal of the first XNOR gate 611 and an output terminal of the second inverter 622 .
- the fourth AND gate 634 is electrically connected to the output terminal of the first inverter 621 and the output terminal of the second inverter 622 .
- the first to the fourth AND gates 631 to 634 generate the first decoded data X[3:0].
- FIG. 7 illustrates a truth table for describing the first decoder according to another embodiment of the invention, in which C 0 and C 1 respectively represent output bits of the first and the second XNOR gates 611 and 612 .
- the first and the second XNOR gates 611 and 612 may directly output the first sub-address A[1:0] or generate an inverted signal of the first sub-address A[1:0].
- the first predetermined bit A 2 may be regarded as reversed information of the first decoder 211 .
- the first decoded data X[3:0] may be ⁇ 0001 ⁇ , ⁇ 0010 ⁇ , ⁇ 0100 ⁇ and ⁇ 1000 ⁇ respectively.
- the first decoded data X[3:0] may be ⁇ 1000 ⁇ , ⁇ 0100 ⁇ , ⁇ 0010 ⁇ and ⁇ 0001 ⁇ respectively.
- FIG. 8 is a schematic diagram illustrating a part of the column decoder according to another embodiment of the invention.
- a second decoder 810 of the decoding circuit 130 illustrated in FIG. 8 is different from the second decoder 212 illustrated in FIG. 2 .
- the second decoder 810 further reverses the second decoded data Y[3:0] in response to a change of a second predetermined bit A 4 of the third sub-address A[5:4].
- the second predetermined bit A 4 is a least significant bit of the third sub-address A[5:4].
- FIG. 9 illustrates a truth table of the decoding circuit according to another embodiment of the invention.
- the bit value of the column address A[5:0] is gradually accumulated one by one from ⁇ 000000 ⁇ to ⁇ 111111 ⁇ .
- the second decoder 810 may decode and obtain different second decoded data Y[3:0] based on the same second sub-address A[3:2].
- the second decoded data Y[3:0] decoded by the second decoder 810 may be ⁇ 0001 ⁇ , ⁇ 0010 ⁇ , ⁇ 0100 ⁇ and ⁇ 1000 ⁇ respectively.
- the second decoded data Y[3:0] decoded by the second decoder 810 may be ⁇ 1000 ⁇ , ⁇ 0100 ⁇ , ⁇ 0010 ⁇ and ⁇ 0001 ⁇ respectively.
- the second decoder 810 reverses a bit sequence of the second decoded data Y[3:0] in the periods T 92 and T 94 .
- the first decoder 211 may determine whether to reverse the first decoded data X[3:0] based on the first predetermined bit A 2 .
- any two of the first to the third decoded data X[3:0], Y[3:0] and Z[3:0] are not transited at the same time.
- the number of times that the first to the third decoded data are simultaneously transited is 0, and the number of times that two of the first to the third decoded data are simultaneously transited is also 0.
- the power consumption of the column decoder 120 may be reduced, and the decoding speed and the reliability of the column decoder 120 may be increased.
- Detailed configurations and operations of the other elements of the embodiment illustrated in FIG. 8 may refer to the embodiments that have been described above and thus, will not be repeated.
- FIG. 10 is a schematic diagram illustrating the second decoder according to an embodiment of the invention.
- the second decoder 810 includes first and second inverters 1011 and 1012 , first to fourth multiplexers 1021 to 1024 and first to fourth AND gates 1031 to 1034 .
- the first inverter 1011 receives a first bit A 2 (i.e., a least significant bit) of the second sub-address A[3:2].
- the first and the second multiplexers 1021 and 1022 respectively receive the first bit A 2 and an output bit of the first inverter 1011 .
- the second inverter 1012 receives a second bit A 3 of the second sub-address A[3:2].
- the third and the fourth multiplexers 1023 and 1024 respectively receive the second bit A 3 and an output bit of the second inverter 1012 .
- the first to the fourth multiplexers 1021 to 1024 are respectively controlled by the second predetermined bit A 4 . Thereby, output bits of the first and the second multiplexers 1021 and 1022 may be inverted to each other, and output bits of the third and the fourth multiplexers 1023 and 1024 may be inverted to each other.
- the first AND gate 1031 is electrically connected to an output terminal of the first multiplexer 1021 and an output terminal of the third multiplexer 1023 .
- the second AND gate 1032 is electrically connected to an output terminal of the second multiplexer 1022 and the output terminal of the third multiplexer 1023 .
- the third AND gate 1033 is electrically connected to the output terminal of the first multiplexer 1021 and an output terminal of the fourth multiplexer 1024 .
- the fourth AND gate 1034 is electrically connected to the output terminal of the second multiplexer 1022 and the output terminal of the fourth multiplexer 1024 .
- the first to the fourth AND gates 1031 to 1034 generate the second decoded data Y[3:0].
- the operation of the second decoder of the embodiment illustrated in FIG. 10 is similar to the operation of the first decoder of the embodiment illustrated in FIG. 4 and thus, will not be repeated.
- FIG. 11 is a schematic diagram illustrating the second decoder according to another embodiment of the invention.
- the second decoder 810 includes first and second XNOR gates 1111 and 1112 , first and second inverters 1121 and 1122 and first to fourth AND gates 1131 to 1134 .
- the first XNOR gate 1111 receives the first bit A 2 (i.e., the least significant bit) of the second sub-address A[3:2] and the second predetermined bit A 4 .
- the second XNOR gate 1112 receives the second bit A 3 of the second sub-address A[3:2] and the second predetermined bit A 4 .
- the first inverter 1121 is electrically connected to an output terminal of the first XNOR gate 1111 .
- the second inverter 1122 is electrically connected to an output terminal of the second XNOR gate 1112 .
- the first AND gate 1131 is electrically connected to the output terminal of the first XNOR gate 1111 and the output terminal of the second XNOR gate 1112 .
- the second AND gate 1132 is electrically connected to the output terminal of the second XNOR gate 1112 and an output terminal of the first inverter 1121 .
- the third AND gate 1133 is electrically connected to the output terminal of the first XNOR gate 1111 and an output terminal of the second inverter 1122 .
- the fourth AND gate 1134 is electrically connected to the output terminal of the first inverter 1121 and the output terminal of the second inverter 1122 .
- the first to the fourth AND gate 1131 to 1134 generate the second decoded data Y[3:0].
- the operation of the second decoder of the embodiment illustrated in FIG. 11 is similar to the operation of the first decoder of the embodiment illustrated in FIG. 6 and thus, will not be repeated.
- the decoding circuit of the column decoder of the invention can receive a column address including M sub-addresses, and (i ⁇ 1) th decoded data generated by an (i ⁇ 1) th decoder of the decoding circuit can not only be based on an (i ⁇ 1) th sub-address, but also be reversed in response to a change of a predetermined bit (e.g., a least significant bit) of an i th sub-address. Namely, in response to the change of the predetermined bit of the i th sub-address, the (i ⁇ 1) th decoder of the decoding circuit outputs the reversed (i ⁇ 1) th decoded data.
- i is a positive integer greater than 1 and less than M.
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CN201710628795.4A CN109308928B (en) | 2017-07-28 | 2017-07-28 | Row decoder for memory device |
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US20070214335A1 (en) * | 2006-03-10 | 2007-09-13 | Bellows Chad A | Memory device with mode-selectable prefetch and clock-to-core timing |
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US7307912B1 (en) * | 2004-10-25 | 2007-12-11 | Lattice Semiconductor Corporation | Variable data width memory systems and methods |
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JP5018074B2 (en) * | 2006-12-22 | 2012-09-05 | 富士通セミコンダクター株式会社 | Memory device, memory controller and memory system |
EP2143107B1 (en) * | 2007-04-12 | 2017-03-22 | Rambus Inc. | Memory system with point-to-point request interconnect |
US8151171B2 (en) * | 2007-05-07 | 2012-04-03 | Broadcom Corporation | Operational parameter adaptable LDPC (low density parity check) decoder |
KR101458792B1 (en) * | 2008-02-11 | 2014-11-10 | 삼성전자주식회사 | Flash memory device |
CN101771421B (en) * | 2010-03-11 | 2012-10-17 | 复旦大学 | Ultrahigh-speed and low-power-consumption QC-LDPC code decoder based on TDMP |
JP2012069583A (en) * | 2010-09-21 | 2012-04-05 | Toshiba Corp | Semiconductor memory |
US8284608B2 (en) * | 2010-10-05 | 2012-10-09 | Nxp B.V. | Combined EEPROM/flash non-volatile memory circuit |
CN102768858B (en) * | 2011-05-04 | 2015-11-25 | 旺宏电子股份有限公司 | A kind of memory body |
CN104601178B (en) * | 2013-10-30 | 2018-02-02 | 群联电子股份有限公司 | Coding/decoding method, decoding circuit, memory storage apparatus and control circuit unit |
US9418719B2 (en) * | 2013-11-28 | 2016-08-16 | Gsi Technology Israel Ltd. | In-memory computational device |
US9390792B2 (en) * | 2013-12-23 | 2016-07-12 | Micron Technology, Inc. | Apparatuses, memories, and methods for address decoding and selecting an access line |
KR102235492B1 (en) * | 2014-08-25 | 2021-04-05 | 삼성전자주식회사 | Nonvolatile memory device and program-verifying method of the same |
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US20070214335A1 (en) * | 2006-03-10 | 2007-09-13 | Bellows Chad A | Memory device with mode-selectable prefetch and clock-to-core timing |
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CN109308928A (en) | 2019-02-05 |
CN109308928B (en) | 2020-10-27 |
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