US10266945B2 - Gas mixing device and substrate processing apparatus - Google Patents

Gas mixing device and substrate processing apparatus Download PDF

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US10266945B2
US10266945B2 US15/622,545 US201715622545A US10266945B2 US 10266945 B2 US10266945 B2 US 10266945B2 US 201715622545 A US201715622545 A US 201715622545A US 10266945 B2 US10266945 B2 US 10266945B2
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gas
stream guide
cylindrical portion
gas stream
peripheral surface
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US20170362704A1 (en
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Jun Yamashita
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
    • B01F25/00—Flow mixers; Mixers for falling materials, e.g. solid particles
    • B01F25/10—Mixing by creating a vortex flow, e.g. by tangential introduction of flow components
    • B01F25/104—Mixing by creating a vortex flow, e.g. by tangential introduction of flow components characterised by the arrangement of the discharge opening
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45514—Mixing in close vicinity to the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45512—Premixing before introduction in the reaction chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
    • B01F23/00—Mixing according to the phases to be mixed, e.g. dispersing or emulsifying
    • B01F23/10—Mixing gases with gases
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
    • B01F23/00—Mixing according to the phases to be mixed, e.g. dispersing or emulsifying
    • B01F23/10—Mixing gases with gases
    • B01F23/19—Mixing systems, i.e. flow charts or diagrams; Arrangements, e.g. comprising controlling means
    • B01F3/02—
    • B01F3/026—
    • B01F5/0068—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/308—Oxynitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45502—Flow conditions in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45531—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations specially adapted for making ternary or higher compositions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
    • B01F2005/0014—
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
    • B01F25/00—Flow mixers; Mixers for falling materials, e.g. solid particles
    • B01F2025/91—Direction of flow or arrangement of feed and discharge openings
    • B01F2025/912—Radial flow
    • B01F2025/9122—Radial flow from the circumference to the center
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
    • B01F2101/00—Mixing characterised by the nature of the mixed materials or by the application field
    • B01F2101/58—Mixing semiconducting materials, e.g. during semiconductor or wafer manufacturing processes
    • B01F2215/0096—

Definitions

  • the present disclosure relates to a gas mixing device and a substrate processing apparatus for mixing plural kinds of gases.
  • an apparatus for processing a substrate with a process gas for example, a film forming apparatus
  • a process gas for example, a film forming apparatus
  • a method of forming a film on a semiconductor wafer (hereinafter, referred to as a “wafer”) as a substrate a method of sequentially supplying a raw material gas and a reaction gas reacting with the raw material gas to the wafer to deposit a molecular layer of a reaction product on a surface of the wafer so as to obtain a thin film, a so-called atomic layer deposition (ALD) method or the like, is known.
  • ALD atomic layer deposition
  • a first gas and a second gas which are film forming gases, are alternately supplied in a state in which a carrier gas flows.
  • the film forming gases are supplied to the substrate in a state of being uniformly mixed with the carrier gas.
  • Some embodiments of the present disclosure provide a technique of uniformly mixing gases, in mixing plural kinds of gases.
  • a gas mixing device for mixing plural kinds of gases, including: a cylindrical portion including an upper surface which is closed; a gas outflow passage which is formed in a central portion of a bottom surface of the cylindrical portion, and extends downward; a plurality of gas stream guide walls which are disposed to be spaced apart from each other in a circumferential direction along an edge of an opening formed by the gas outflow passage in the bottom surface, and which are installed to be rotationally symmetrical to a center of the cylindrical portion, the plurality of gas stream guide walls protruding toward the upper surface; and a gas inlet part installed between the plurality of gas stream guide walls and an inner peripheral surface of the cylindrical portion, and into which a gas to be mixed flows, wherein, when viewed in one direction of a clockwise direction and a counterclockwise direction in the circumferential direction of the cylindrical portion, if the one direction is defined as a front and the other direction is defined as a rear, the plurality of gas stream guide walls guide the gas introduced
  • a substrate processing apparatus including: the aforementioned gas mixing device in which different process gases are introduced from different positions so as to be mixed; a processing vessel to which the process gas mixed in the gas mixing device is supplied; a mounting part installed in the processing vessel, and configured to mount a substrate to be processed by the process gas; and an exhaust part configured to evacuate the interior of the processing vessel.
  • FIG. 1 is a longitudinal sectional view of a film forming apparatus according to an embodiment of the present disclosure.
  • FIG. 2 is a cross sectional view of a gas mixing device according to an embodiment of the present disclosure
  • FIG. 3 is an exploded perspective view of a gas diffusion part.
  • FIG. 4 is a cross sectional perspective view of the gas mixing device.
  • FIG. 5 is a longitudinal sectional view of the gas mixing device.
  • FIG. 6 is a plan view of the gas mixing device.
  • FIG. 7 is a timing chart of a gas supply in the embodiment of the present disclosure.
  • FIG. 8 is an explanatory view illustrating a flow of gas in the gas mixing device.
  • FIG. 9 is an explanatory view illustrating a flow of gas in the gas mixing device.
  • FIGS. 10A to 10C are cross sectional perspective views illustrating gas mixing devices according to a comparative example and examples.
  • FIG. 11 is a characteristic view illustrating standard deviations of masses of gases in the comparative example and examples.
  • FIG. 12 is a characteristic view illustrating a standard deviation regarding a mass flow ratio between the reaction gas and the carrier gas.
  • the film forming apparatus is constituted by an apparatus for sequentially supplying a titanium chloride (TiCl 4 ) gas, an ammonia (NH 3 ) gas, and an oxygen (O 2 ) gas to a surface of a wafer W to form a titanium oxynitride (TiON) film by a so-called ALD method. Further, in the present disclosure, it is assumed that a carrier gas is also included in a process gas.
  • TiCl 4 titanium chloride
  • NH 3 ammonia
  • O 2 oxygen
  • the film forming apparatus includes a processing vessel 1 which is a vacuum vessel made of a metal such as aluminum or the like and having a substantially circular planar shape, in which a mounting table 2 on which the wafer W is mounted is installed in the processing vessel 1 .
  • a loading/unloading port 11 of the wafer W and a gate valve 12 for opening and closing the loading/unloading port 11 are installed on a side surface of the processing vessel 1 .
  • An exhaust duct 13 whose vertical cross section is formed by bending a rectangular duct in an annular shape is installed at a position above the loading/unloading port 11 so as to be stacked on a sidewall constituting a main body of the processing vessel 1 .
  • a slit-like opening 131 extending along a circumferential direction is formed on an inner peripheral surface of the exhaust duct 13 .
  • An exhaust port 132 is formed on an outer wall surface of the exhaust duct 13 , and an exhaust part 14 formed of a vacuum pump or the like is connected to the exhaust port 132 .
  • the mounting table 2 is installed at a position inside the exhaust duct 13 .
  • a heater (not shown) for heating the wafer W to a film formation temperature of, for example, 350 to 550 degrees C., is embedded in the mounting table 2 .
  • a cover member 22 is installed in the mounting table 2 to cover a peripheral portion of the mounting table 2 and a side peripheral surface of the mounting table 2 in a circumferential direction.
  • a support member 23 which penetrates a bottom surface of the processing vessel 1 and extends in a vertical direction, is connected to a central part of a lower surface of the mounting table 2 .
  • a lower end portion of the support member 23 is connected to an elevator mechanism 24 via a plate-like support 232 horizontally disposed on a lower side of the processing vessel 1 .
  • the elevator mechanism 24 moves the mounting table 2 up and down between a transfer position (indicated by an alternate long and short dash line in FIG. 1 ) for transferring the wafer W to and from a wafer transfer mechanism (not shown) entered from the loading/unloading port 11 and a processing position indicated by the solid line in FIG. 1 , which is above the transfer position and where the film formation is performed on the wafer W.
  • a bellows 231 is installed between the bottom surface of the processing vessel 1 through which the support member 23 passes and the support 232 so as to cover the support member 23 from the outside in a circumferential direction. The bellows 231 partitions an internal atmosphere of the processing vessel 1 from the outside, and expands and contracts according to an elevation operation of the support 232 .
  • a plurality of (e.g., three) support pins 25 is installed below the mounting table 2 to support and lift up the wafer W from a lower surface side of the wafer W when transferring the wafer W to and from the external wafer transfer mechanism.
  • the support pins 25 are connected to an elevator mechanism 26 so that they can freely move up and down, and the wafer W is transferred to and from the wafer transfer mechanism by protruding and retracting the support pins 25 from an upper surface of the mounting table 2 via a through hole (not shown) penetrating the mounting table 2 in a vertical direction.
  • a gas supply part 5 for supplying a gas toward the wafer W mounted on the mounting table 2 is installed so as to close a circular opening formed on an upper surface side of the exhaust duct 13 .
  • the gas supply part 5 will be described with reference to FIG. 2 .
  • the gas supply part 5 has a top plate portion 50 , and a cylindrical shower head 51 whose upper side is opened and which has a flat bottom is installed below the top plate portion 50 .
  • a gas mixing device 4 to be described later is installed within the gas supply part 5 , and it is configured so that a gas mixed in the gas mixing device 4 is supplied into the shower head 51 from an opening 52 formed at the center of a lower surface of the top plate portion 50 via a gas outflow passage 41 .
  • a flat cylindrical diffusion chamber 53 for diffusing a gas supplied from the gas mixing device 4 is installed in the shower head 51 around the opening 52 .
  • a plurality of gas diffusion parts 54 is disposed under a lower surface 53 A of the diffusion chamber 53 at equal intervals along a circle centered on a central part of the wafer W mounted on the mounting table 2 in plan view, and another gas diffusion part 54 is also disposed above the central part of the wafer W.
  • the gas diffusion part 54 is constituted by a cylindrical member and installed to protrude downward from the lower surface 53 A of the diffusion chamber 53 .
  • a hole portion 55 for supplying a gas to each gas diffusion part 54 is formed on the lower surface 53 A of the diffusion chamber 53 .
  • a plurality of gas ejection holes 56 is formed to be spaced apart from each other on a side surface of the gas diffusion part 54 in a circumferential direction.
  • a gas introduced to the gas diffusion part 54 from the diffusion chamber 53 is ejected from each of the gas ejection holes 56 so as to be spread uniformly in a horizontal direction. Further, the gas ejected into the shower head 51 is supplied to the wafer W through gas injection holes 57 formed in the shower head 51 .
  • the gas mixing device 4 has a cylindrical portion 40 including a lower member 40 A and an upper member 40 B for closing an upper side of the lower member 40 A.
  • the lower member 40 A has a bottom surface portion 46 and an annular outer wall 47 forming a surrounding wall of the cylindrical portion 40 , and a flange 46 A is formed on an outer periphery of the outer wall 47 .
  • the upper member 40 B has a top plate 48 for covering an upper side of the outer wall 47 which is the annular wall of the lower member 40 A. A periphery of the upper member 40 B is bent downward to form a wall portion 49 .
  • the upper member 40 B engages with the lower member 40 A from an upper side such that the outer wall 47 is brought into close contact with the top plate 48 and the flat cylindrical portion 40 is formed.
  • the gray portions of FIGS. 4 and 6 represent portions of the lower member 40 A in close contact with the top plate 48 of the upper member 40 B.
  • the gas outflow passage 41 extending in a vertical direction is connected to a central portion of a lower surface of the bottom surface portion 46 .
  • the gas mixing device 4 may be constituted that the gas outflow passage 41 horizontally extends.
  • the direction in which the central axis of the cylindrical portion 40 extends is a vertical direction and the gas outflow passage 41 extends in the vertical direction.
  • Three gas stream guide walls 42 A to 42 C formed to extend in a circumferential direction along an edge of opening of the gas outflow passage 41 are installed in the lower member 40 A.
  • Each of the gas stream guide walls 42 A to 42 C is formed to be rotationally symmetrical to the center of the cylindrical portion 40 . Since the three gas stream guide walls 42 A to 42 C have the same structure, only the gas stream guide wall 42 A will be representatively described herein.
  • the gas stream guide wall 42 A protrudes from a bottom surface of the lower member 40 A toward the top plate 48 of the upper member 40 B.
  • an upper surface of the gas stream guide wall 42 A is installed to be in close contact with the top plate 48 of the upper member 40 B.
  • a surface of the gas stream guide wall 42 A facing the inner peripheral surface of the cylindrical portion 40 is bent toward the center of the cylindrical portion 40 in a front direction.
  • the gas stream guide wall 42 A has an arc shape having a smaller diameter than that of the inner peripheral surface of the cylindrical portion 40 in plan view.
  • the surface of the gas stream guide wall 42 A facing the inner periphery of the cylindrical portion 40 is defined as an outer peripheral surface of the gas stream guide wall 42 A and a surface of the gas stream guide wall 42 A on the central side of the cylindrical portion 40 is defined as an inner peripheral surface of the gas stream guide wall 42 A
  • a front end portion of the outer peripheral surface of the gas stream guide wall 42 A and a rear end portion of the inner peripheral surface of the gas stream guide wall 42 B installed on the front side of the gas stream guide wall 42 A are disposed to face each other with a gap therebetween, and a region sandwiched between a front end portion of the outer peripheral surface of the gas stream guide wall 42 A on the rear side and a rear end portion of the inner peripheral surface of the gas stream guide wall 42 B on the front side becomes a gas stream guide passage 43 .
  • a front side portion of the inner peripheral surface of the gas stream guide wall 42 A is an inclined surface inclined downward, and a rear side of the inner peripheral surface of the gas stream guide wall 42 A is a surface standing straight.
  • the inclined surface is a curved surface continuous with the inner peripheral surface of the gas outflow passage 41 , and as illustrated in FIG. 5 , the inner peripheral surface of the gas outflow passage 41 is inclined to be gradually narrow downward from the opening in the bottom surface of the cylindrical portion 40 .
  • first to third gas inlet pipes 45 A to 45 C respectively corresponding to the gas stream guide walls 42 A to 42 C is connected through the top plate 48 of the upper member 40 B to a rear position, relative to the center, when viewed from the front-rear side of the gas stream guide walls 42 A to 42 C, between each of the gas stream guide walls 42 A to 42 C in the cylindrical portion 40 and the inner peripheral surface of the cylindrical portion 40 .
  • the first to third gas inlet pipes 45 A to 45 C are disposed to be rotationally symmetrical to each other with respect to the center of the cylindrical portion 40 .
  • the inner peripheral surface of the cylindrical portion 40 and the outer peripheral surface of each of the gas stream guide walls 42 A to 42 c are bent along a contour of opening portions of the first to third gas inlet pipes 45 A to 45 C.
  • the opening portions of the first to third gas inlet pipes 45 A to 45 C in the cylindrical portion 40 correspond to gas inlet parts.
  • the other end of the first gas inlet pipe 45 A is branched into two parts, and a nitrogen (N 2 ) gas supply source 61 and a titanium chloride (TiCl 4 ) gas supply source 62 are connected to the ends of the branches, respectively.
  • the other end of the second gas inlet pipe 45 B is branched into two parts, and a nitrogen (N 2 ) gas supply source 63 and an ammonia (NH 3 ) gas supply source 64 are connected to the ends of the branches, respectively.
  • the other end of the third gas inlet pipe 45 C is branched into two parts, and a nitrogen (N 2 ) gas supply source 65 and an oxygen (O 2 ) gas supply source 66 are connected to the ends of the branches, respectively.
  • reference symbols M 1 to M 6 denote flow rate adjusting parts
  • reference symbols V 1 to V 6 denote valves.
  • the first to third gas inlet pipes 45 A to 45 C are heated to, for example, 200 degrees C. by a heater (not shown).
  • the N 2 gas corresponds to the carrier gas
  • the TiCl 4 gas, the NH 3 gas and the O 2 gas correspond to the film forming gases.
  • the film forming apparatus is connected with a control part 9 .
  • the control part 9 is configured with, for example, a computer having a CPU and a memory part (not shown).
  • a program having groups of steps (commands) organized to control operations of the film forming apparatus, namely operations of moving the wafers W mounted on the mounting table 2 up to the processing position, supplying a reaction gas, an oxide gas, and a substituting gas toward the wafers W in a given order to form a TiON film, and unloading the wafers W after the film formation is stored in the memory part.
  • This program is stored in, for example, a storage medium such as a hard disc, a compact disc, a magneto-optical disc, a memory card or the like, and installed on the computer therefrom.
  • FIG. 7 is a timing chart of a gas supply in the film forming process of a TiON film by an ALD method. Further, in FIG. 7 , the horizontal axis does not accurately represent a time interval of supply and stop of each gas.
  • the interior of the processing vessel 1 is depressurized to a predetermined vacuum atmosphere in advance and the mounting table 2 is subsequently moved down to a transfer position.
  • the gate valve 12 is opened and a transfer arm of the wafer transfer mechanism installed in, for example, a vacuum transfer chamber (not shown), connected to the loading/unloading port 11 is entered so that the wafers W are transferred to and from the support pins 25 .
  • the support pins 25 are moved down and the wafers W are mounted on the mounting table 2 heated by the heater to, e.g., 440 degrees C.
  • the gate valve 12 is closed and the mounting table 2 is moved up to the processing position. Further, at time t 0 illustrated in FIG. 7 , the valves V 1 , V 3 , and V 5 of the gas mixing device 4 are opened.
  • the flow rate or time mentioned in the description of the sequence given below is merely an example for explanation. Accordingly, an N 2 gas with a flow rate of 5,000 sccm is supplied from each of the first to third gas inlet pipes 45 A to 45 C into the cylindrical portion 40 . Thus, the N 2 gas with a total flow rate of 15,000 sccm is supplied from the gas mixing device 4 into the processing vessel 1 .
  • the internal pressure of the processing vessel 1 is regulated to a pressure predetermined in a process recipe, and the valve V 2 is then opened for 0.05 seconds from time t 1 .
  • a TiCl 4 gas with a flow rate of, for example, 50 sccm is supplied together with the N 2 gas from the first gas inlet pipe 45 A into the cylindrical portion 40 .
  • the mixture of the TiCl 4 gas and the N 2 gas introduced from the first gas inlet pipe 45 A is mixed with the N 2 gas introduced from each of the second gas inlet pipe 45 B and the third gas inlet pipe 45 C in the cylindrical portion 40 , and is supplied into the processing vessel 1 via the gas outflow passage 41 .
  • valve V 2 by closing the valve V 2 after the lapse of 0.05 seconds from the time t 1 , only the N 2 gas is introduced from the first gas inlet pipe 45 A to the cylindrical portion 40 .
  • the N 2 gas is supplied from the gas mixing device 4 into the processing vessel 1 .
  • the TiCl 4 gas in the processing vessel 1 is substituted by the N 2 gas.
  • the valve V 4 is opened for 0.2 seconds from time t 2 after the lapse of 0.2 seconds from when the valve V 2 is closed.
  • the NH 3 gas with a flow rate of 2,700 sccm is supplied together with the N 2 gas from the second gas inlet pipe 45 B to the cylindrical portion 40 .
  • the gas supplied from the second gas inlet pipe 45 B is mixed with the N 2 gas introduced from each of the first gas inlet pipe 45 A and the third gas inlet pipe 45 C in the cylindrical portion 40 , and is supplied to the processing vessel 1 .
  • valve V 4 by closing the valve V 4 , only the N 2 gas is introduced from the second gas inlet pipe 45 B, and the N 2 gas is supplied from the gas mixing device 4 to the processing vessel 1 and the NH 3 gas in the processing vessel 1 is substituted by the N 2 gas.
  • the valve V 6 is opened for 0.2 seconds from time t 3 after the lapse of 3.3 seconds from when the valve V 4 is closed.
  • the O 2 gas with a flow rate of 50 sccm is supplied together with the N 2 gas from the third gas inlet pipe 45 C to the cylindrical portion 40 , mixed with the N 2 gas introduced from each of the first gas inlet pipe 45 A and the second gas inlet pipe 45 B in the cylindrical portion 40 , and supplied to the processing vessel 1 .
  • the reaction gases TiCl 4 gas and NH 3 gas
  • the oxide gas O 2 gas
  • the substituting gas N 2 gas
  • the gases introduced from the first to third gas inlet pipes 45 A to 45 C are mixed in the gas mixing device 4 and supplied to the processing vessel 1 .
  • a gas with a low flow rate such as the O 2 or the like gas as described in the aforementioned embodiment
  • an N 2 gas with a large flow rate it is difficult to uniformly mix them.
  • the mixing of gases in the gas mixing device 4 according to the aforementioned embodiment will be described by an example in which the O 2 gas is supplied from the time t 3 .
  • a gas supplied from the third gas inlet pipe 45 C into the cylindrical portion 40 is regulated by the gas stream guide wall 42 C, and thus flows in a circumferential direction (the front-rear direction) of the cylindrical portion 40 .
  • a front side of the gas stream guide wall 42 C is bent toward the central side of the cylindrical portion 40 .
  • a front end side of the outer peripheral surface of the gas stream guide wall 42 C is disposed to face a rear end side of the inner peripheral surface of the gas stream guide wall 42 A positioned in front of the gas stream guide wall 42 C.
  • the gas stream guide passage 43 for guiding a gas is provided between a front end side of the outer peripheral surface of the gas stream guide wall 42 C and a rear end side of the inner peripheral surface of the gas stream guide wall 42 A. Further, the gas stream guide wall 42 C has an arc shape having a smaller diameter than that of the inner peripheral surface of the cylindrical portion 40 .
  • a gas which is introduced to the cylindrical portion 40 from the third gas inlet pipe 45 C and flows to a front side along the outer peripheral surface of the gas stream guide wall 42 C, flows while being bent toward the center of the cylindrical portion 40 and enters the inner peripheral surface side of the preceding gas stream guide wall 42 A followed by the gas stream guide wall 42 C from the gas stream guide passage 43 .
  • the gas that has entered the inner peripheral surface side of the gas stream guide wall 42 A flows along the inner peripheral surface of the gas stream guide wall 42 A. Since the front side of the inner peripheral surface of the gas stream guide wall 42 A has a curved surface continuous with the inner surface of the gas outflow passage 41 , the gas introduced to the inner surface side of the gas stream guide wall 42 A enter the gas outflow passage 41 while being bent along the curvature of the inner peripheral surface of the gas stream guide wall 42 A.
  • the gas since the gas flows along the periphery of the gas outflow passage 41 in the circumferential direction and enters the gas outflow passage 41 while flowing along the outer peripheral surface of the gas stream guide wall 42 C and the inner peripheral surface of the gas stream guide wall 42 A, the gas becomes a swirl flow flowing along the inner peripheral surface of the gas outflow passage 41 in the circumferential direction, as illustrated in FIG. 8 .
  • a portion of the gas supplied from the third gas inlet pipe 45 C to the cylindrical portion 40 flows toward the rear side along the outer peripheral surface of the gas stream guide wall 42 C and then flows toward the inner peripheral surface side of the gas stream guide wall 42 C together with a gas, which is supplied from the second gas inlet pipe 45 B and flows toward the front side along the gas stream guide wall 42 B provided right behind the gas stream guide wall 42 C, to become a swirl flow flowing along the inner peripheral surface of the gas outflow passage 41 in the circumferential direction.
  • a space surrounded by the inner surfaces of the gas stream guide walls 42 A to 42 C and the inner peripheral surface of the gas outflow passage 41 is configured to become narrow downward.
  • the N 2 gas supplied from the first gas inlet pipe 45 A and the second gas inlet pipe 45 B to the cylindrical portion 40 also becomes a swirl flow and flows along the gas outflow passage 41 , while gradually increasing the its flow velocity.
  • Each of the gases supplied from the first to third gas inlet pipes 45 A to 45 C becomes a swirl flow and flows along the gas outflow passage 41 while gradually increasing the its flow velocity.
  • the film forming gas having a small flow rate is mixed with the N 2 gas having a large flow rate, they are uniformly mixed, as well as the mixing between the TiCl 4 gas and the N 2 gas and between the NH 3 gas and the N 2 gas.
  • the gas containing a small amount of O 2 supplied from the third gas inlet pipe 45 C and the N 2 gas supplied from the first gas inlet pipe 45 A and the second gas inlet pipe 45 B are mixed with each other and become a mixture gas at a uniform concentration.
  • the mixture gas is supplied to the processing vessel 1 .
  • the mixture gas is diffused in the gas diffusion part 54 and supplied to the wafer W via the shower head 51 .
  • a TiON film having a predetermined film thickness is formed by repeating the supply of the TiCl 4 gas, the supply of the NH 3 gas, and the supply of the O 2 gas, for example, tens of times to hundreds of times
  • a final O 2 gas is discharged by supplying a substituting nitrogen gas, and the mounting table 2 is moved down to the transfer position.
  • the gate valve 12 is opened to allow the transfer arm to enter, and the wafer W is transferred to the transfer arm from the support pins 25 in a reverse order from the loading process.
  • the gas stream guide walls 42 A to 42 C which have the end portions of the front side bent toward the center of the cylindrical portion 40 and are rotationally symmetrical to the center of the cylindrical portion 40 , are disposed to be spaced apart from each other along the edge of the opening of the gas outflow passage 41 .
  • the gases introduced from the first to third gas inlet pipes 45 A to 45 C installed between the gas stream guide walls 42 A to 42 C and the inner peripheral surface of the cylindrical portion 40 flow along the outer peripheral surfaces of the gas stream guide walls 42 A to 42 C and become the swirl flows, which are then guided to the gas outflow passage 41 . Since the gases introduced from the first to third gas inlet pipes 45 A to 45 C becomes the swirl flows, when the gas streams join in the gas outflow passage 41 , non-uniformity of concentration of the mixture gas is difficult to occur, thus the gases can be uniformly mixed.
  • the gases can be sufficiently mixed.
  • a mixture ratio between the film forming gas and the carrier gas a mass flow rate of the film forming gas/mass flow rate of the carrier gas
  • the gases are uniformly mixed.
  • the mixture ratio is a value of (mass flow rate of film forming gas/mass flow rate of the carrier gas) in a gas supplied from one gas inlet pipe to the cylindrical portion 40 , and the same mass flow rate of the carrier gas introduced from the other gas inlet pipe as that of the carrier gas introduced from one gas inlet pipe is introduced to the cylindrical portion 40 .
  • the inner peripheral surfaces of the gas stream guide walls 42 A to 42 C include the inclined surface formed to be inclined downward.
  • the gas outflow passage 41 includes an inclined surface formed to be inclined toward the center of the cylindrical portion 40 from the opening in the bottom surface of the cylindrical portion 40 in a downward direction. With this configuration, it is possible to gradually increase the speed of the swirling flow. Thus, the mixture gas can be more uniformly mixed as illustrated in the examples described hereinbelow.
  • a rear end portion of the inner peripheral surface of the gas stream guide wall on the front side for example, the gas stream guide wall 42 A, and a front end portion of the outer peripheral surface of the gas stream guide wall 42 C on the rear side are disposed to face each other.
  • the gas stream guide passage 43 is provided between the rear end portion of the inner peripheral surface of the gas stream guide wall 42 A and the front end portion of the outer peripheral surface of the gas stream guide wall 42 C.
  • the speed of the swirl flow can be increased by allowing the inner peripheral surfaces of the gas stream guide walls 42 A to 42 C to be inclined, the mixture gas can be more uniformly mixed.
  • the rear end portion side of the inner peripheral surface of the gas stream guide wall 42 A is inclined, the rear end portion of the inner peripheral surface of the gas stream guide wall 42 A and the front end portion of the outer peripheral surface of the gas stream guide wall 42 C are too close. Therefore, it is difficult to guide a gas toward the inner peripheral surface side of the gas stream guide wall 42 A on the front side.
  • the rear side of the inner peripheral surface of the gas stream guide wall 42 A is formed as a surface standing more straight than the front side, whereby the gas can easily enter the gas stream guide passage 43 .
  • a gas of one gas inlet pipe among the three gas inlet pipes 45 A to 45 C is stopped and gases may be supplied from the other two gas inlet pipes so as to be mixed.
  • the supply of a gas of the first gas inlet pipe 45 A is stopped and an N 2 gas is supplied from the second gas inlet pipe 45 B and an N 2 gas and an O 2 gas are supplied from the third gas inlet pipe 45 C.
  • the gases supplied from the second gas inlet pipe 45 B and the third gas inlet pipe 45 C are mixed as swirl flows, they are uniformly mixed.
  • the gas mixing device 4 may be applied to a plasma processing apparatus.
  • the film forming apparatus illustrated in FIGS. 1 and 2 may be configured so that a high-frequency power may be applied to the shower head 51 , and the mounting table 2 is connected to a ground potential. Further, it may be configured so that capacitively coupled plasma is generated between the shower head 51 as an upper electrode and the mounting table 2 as a lower electrode, and a gas mixed by the gas mixing device 4 is supplied between the shower head 51 and the mounting table 2 .
  • a process gas mixed by the gas mixing device 4 may be a raw material gas and a reaction gas reacting with the raw material gas, or it may be applied to a CVD device in which a mixture of the raw material gas and the reaction gas is supplied to the wafer W.
  • the first to third gas inlet pipes 45 A to 45 C may be connected to a side surface of the cylindrical portion 40 . Even when a gas is supplied from the side surface of the cylindrical portion 40 , since a gas stream is guided by the gas stream guide walls 42 A to 42 C, the same effects may be achieved.
  • the number of gas inlet pipes and gas stream guide walls is increased, it is necessary to enlarge the cylindrical portion 40 , making it difficult to mix gases.
  • the number of gas inlet pipes and gas stream guide walls is two or three.
  • the inner peripheral surfaces of the gas stream guide walls 42 A to 42 C may be vertical surfaces instead of inclined surfaces.
  • a film forming apparatus employing the gas mixing device 4 was used and a mixture gas was supplied into the processing vessel 1 , and the uniformity of the upper side of the mounting table 2 was examined by simulation.
  • a mass flow ratio (mass flow rate of the reaction gas/mass flow rate of the carrier gas) between a reaction gas and a carrier gas supplied from the first gas inlet pipe 45 A was set at 0.338 by using the film forming apparatus employing the gas mixing device 4 according to the embodiment of the present disclosure.
  • the same amount of carrier gas as that of the carrier gas supplied from the first gas inlet pipe 45 A was flowed to the other second gas inlet pipe 45 B and the third gas inlet pipe 45 C, respectively.
  • the internal pressure of the processing vessel 1 was set at 3 Torr (400 Pa) and the temperature of the gas was set at 200 degrees C.
  • example 2 an example in which the gas mixing device 4 having the same configuration as that of example 1 is applied, except that the inner peripheral surface of the gas outflow passage 41 was a vertical surface, was illustrated as example 2.
  • FIG. 10B an example in which the gas mixing device 4 having the same configuration as that of example 2 is applied, except that a connection position of the first to third gas inlet pipes 45 A to 45 C to which the respective gases in the cylindrical portion 40 are introduced was set at a position corresponding to the each center of the gas stream guide walls 42 A to 42 C in the front-rear direction, was illustrated as example 3.
  • FIG. 10C an example in which a gas mixing device employing a flow passage, instead of the cylindrical portion 40 illustrated in example 1, was illustrated as a comparative example.
  • the flow passage 91 allows gases supplied from the first to third gas inlet pipes 45 A to 45 C to flow to one side in a circumferential direction when viewed from the gas outflow passage 41 . Subsequently, the gases are bent to be perpendicular to the gas outflow passage side, and discharged from the gas outflow passage 41 . Further, in FIG. 10C , in order to avoid cumbersomeness of description, only a portion through which a gas flows is indicated by the solid line and an outer wall and a bottom surface portion in the lower member 40 A are indicated by the dotted lines.
  • FIG. 11 is a characteristic view illustrating the results and illustrating standard deviations (1 ⁇ ) in examples 1 to 3 and the comparative example as a percentage (1 ⁇ %) to an average value.
  • the comparative example and examples 2 and 3 employ a structure in which a recess is formed in the diffusion chamber 53 , but it does not affect an evaluation of the effects of the gas mixing device 4 .
  • 1 ⁇ % in the comparative example and examples 1 to 3 were 7.8%, 1.08%, 2.9%, and 4.2%, respectively. According to the results, compared with the gas mixing device 4 according to the comparative example, the gas mixing devices 4 according to examples 1 to 3 have a reduced 1 ⁇ %, and thus, it can be seen that gases are more uniformly mixed above the mounting table 2 .
  • Example 2 has a smaller 1 ⁇ % than that of example 3. Thus, it can be said that gases are more uniformly mixed by allowing a connection position of the first to third gas inlet pipes 45 A to 45 C for supplying the respective gases in the cylindrical portion 40 to be set on a rear side, relative to the central part of the gas stream guide walls 42 A to 42 C in the front-rear direction.
  • Example 1 has a smaller 1 ⁇ % than that of example 2. Thus, it can be said that gases are more uniformly mixed by configuring the inner peripheral surface of the gas outflow passage 41 to be gradually narrow downward.
  • mass flow ratios between a reaction gas and a carrier gas were set at 0.338, 0.342, 0.363, 0.830, 0.840, and 0.96 using the film forming apparatus employing the gas mixing device 4 illustrated in example 1, and a standard deviation (1 ⁇ ) of the mass of the gas was obtained as in example 1.
  • FIG. 12 is a characteristic view illustrating the results and illustrating the standard deviations (1 ⁇ ) regarding a mass flow ratio between the reaction gas and the carrier gas. As illustrated in FIG. 12 , 1 ⁇ % was 1.08 or less, which is very low, in any cases where the mass flow ratio was 0.338 to 0.96. According to the results, it can be said that gases are uniformly mixed above the mounting table 2 , regardless of a mass flow ratio, by using the gas mixing device 4 according to the embodiment of the present disclosure.
  • a plurality of gas stream guide walls which are bent toward the center of the cylindrical portion in a circumferential direction and rotationally symmetrical to the center of the cylindrical portion, is disposed to be spaced apart from each other in the circumferential direction along an edge of an opening of the gas outflow passage.

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CN107523805B (zh) 2019-10-01
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JP6792786B2 (ja) 2020-12-02
KR20170142885A (ko) 2017-12-28

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