Державний Вищий Навчальний Заклад "Ужгородський Національний Університет"
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Priority to UAA201214055ApriorityCriticalpatent/UA109136C2/en
Publication of UA109136C2publicationCriticalpatent/UA109136C2/en
This invention relates to inorganic chemistry and inorganic material science. A method for growing single crystals of copper (I) hexathiophosphate Cu7PS6 is claimed. The single crystals are grown by a method of directional crystallization from the melt, which includes stage heating of the vacuumized quartz vessels containing raw ingredients copper, phosphorus, sulfur in the desired stoichiometric ratio. The heating is carried out to a peak temperature and the vessels are held for 24 hours. The growth of single crystals is carried out at a maximum temperature of +1380 K at a rate of 3 mm/day in double beveled end ampoules. The proposed method allows to produce single crystals of large dimensions and can be realized using standard equipment.
UAA201214055A2012-12-102012-12-10method for growing single crystals of copper (I) hexathiophosphate Cu7PS6
UA109136C2
(en)