TWM613963U - Improved low temperature co-fired ceramic (LTCC) electronic device unit structure - Google Patents

Improved low temperature co-fired ceramic (LTCC) electronic device unit structure Download PDF

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TWM613963U
TWM613963U TW110201375U TW110201375U TWM613963U TW M613963 U TWM613963 U TW M613963U TW 110201375 U TW110201375 U TW 110201375U TW 110201375 U TW110201375 U TW 110201375U TW M613963 U TWM613963 U TW M613963U
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ltcc
electronic device
device unit
unit structure
layer
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TW110201375U
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陳春夏
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悅城科技股份有限公司
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Abstract

一種改進的低溫共燒陶瓷(LTCC)電子器件單元結構,包含一模造層、一基底層及導電體;該模造層與基底層為陶瓷材料層,在模造層上具有由鏤空槽溝所形成的電極圖模,該鏤空槽溝的深度介於10µm至120µm之間,寬度在80µm以上;該基底層與模造層密接疊合在一起,且二者交疊的面積範圍至少包含設置前述電極圖模的區域部分;所述導電體被填設於前述電極圖模的鏤空槽溝中,所述導電體的填充厚度在10µm以上。An improved low-temperature co-fired ceramic (LTCC) electronic device unit structure, including a molded layer, a base layer and a conductor; the molded layer and the base layer are ceramic material layers, and the molded layer has hollow grooves formed Electrode pattern, the depth of the hollow groove is between 10µm and 120µm, and the width is more than 80µm; the base layer and the molding layer are closely laminated together, and the overlapping area of the two at least includes the setting of the aforementioned electrode pattern The area portion; the conductor is filled in the hollow groove of the aforementioned electrode pattern, and the filling thickness of the conductor is more than 10 µm.

Description

改進的低溫共燒陶瓷(LTCC)電子器件單元結構Improved low temperature co-fired ceramic (LTCC) electronic device unit structure

本新型涉及以低溫共燒陶瓷(LTCC)手段製作電子器件之技術領域。 This model relates to the technical field of manufacturing electronic devices by means of low-temperature co-fired ceramics (LTCC).

低溫共燒陶瓷技術(LTCC,Low Temperature Co-fired Ceramic)目前已被廣泛應用於注重體積輕薄短小的可攜式產品上,是無線通訊模組的技術趨勢。使用LTCC製程可將各種被動元件,例如低容值電容、電阻、濾波器、阻抗轉換器、耦合器等元件埋入多層陶瓷基板中,利用印刷塗佈製程燒結形成整合式陶瓷元件。如圖5所示,目前以LTCC手段製作電子器件時,在網印(Screen Printing)製程步驟中,係以網版印刷方式將導電膠印在陶瓷生胚800表面上,形成所需的電極圖案900,經過烘乾之後獲得固化的電極;這種以印刷塗佈方式所形成的電極厚度,通常僅能達到10μm左右,對於必須具備大功率效能的被動元件,如耦合器,其電極厚度需求達40μm或是更高時,前述傳統的印刷塗佈方式無法做到,若是使用重覆數次的印刷及烘乾製程,所形成的電極圖案雖可達到所需的電極厚度,但是電極圖案已經有外擴及毛邊情況發生,導致電子器件成品的電氣特性、功能不符需求,又或是在下一步LTCC製程的加工疊壓時,衍生電極圖案變形或形成電極側邊空洞的缺陷。 Low Temperature Co-fired Ceramic (LTCC) technology has been widely used in portable products that focus on lightness, thinness, and small size, and is the technology trend of wireless communication modules. Using the LTCC process, various passive components, such as low-capacitance capacitors, resistors, filters, impedance converters, couplers, etc., can be embedded in a multilayer ceramic substrate and sintered to form an integrated ceramic component using a printing coating process. As shown in Figure 5, when electronic devices are currently manufactured by LTCC, in the screen printing process step, conductive rubber is printed on the surface of the ceramic green body 800 by screen printing to form the required electrode pattern 900 After drying, the cured electrode is obtained; the thickness of the electrode formed by printing and coating is usually only about 10μm. For passive components that must have high-power performance, such as couplers, the electrode thickness needs to reach 40μm. Or higher, the aforementioned traditional printing and coating methods cannot be achieved. If the printing and drying process is repeated several times, the electrode pattern formed can reach the required electrode thickness, but the electrode pattern already has an external appearance. Extending and flashing occurs, resulting in the electrical characteristics and functions of the finished electronic device that do not meet the requirements, or the deformation of the electrode pattern or the formation of voids on the side of the electrode during the processing and stacking of the next LTCC process.

有鑒於此,本創作主要的目的在於提供一種改進的低溫共燒陶瓷(LTCC)電子器件單元結構,其在陶瓷生胚上設有電極圖模結構,可依所需填入導電材料,以形成具備符合要求電極厚度的電極圖案。 In view of this, the main purpose of this creation is to provide an improved low-temperature co-fired ceramic (LTCC) electronic device unit structure, which is provided with an electrode pattern structure on the ceramic green embryo, which can be filled with conductive materials as required to form It has an electrode pattern that meets the required electrode thickness.

根據本創作的一實施例,一種改進的低溫共燒陶瓷(LTCC)電子器件單元結構,其至少包含一模造層、一基底層及導電體;所述模造層為一陶瓷材料層,具有由鏤空槽溝所形成的電極圖模,所述鏤空槽溝的深度介於10μm至120μm之間,寬度在80μm以上;所述基底層為一陶瓷材料層,其與所述模造層密接疊合在一起,且二者交疊的面積範圍至少包含設置所述電極圖模的區域部分;以及所述導電體被填設於所述鏤空槽溝中,其填充厚度在10μm以上。 According to an embodiment of the present creation, an improved low-temperature co-fired ceramic (LTCC) electronic device unit structure includes at least a molding layer, a base layer and a conductor; the molding layer is a ceramic material layer with a hollow The electrode pattern formed by the groove, the depth of the hollow groove is between 10 μm and 120 μm, and the width is more than 80 μm; the base layer is a ceramic material layer, which is closely laminated with the molded layer , And the overlapping area of the two includes at least the area where the electrode pattern is set; and the conductor is filled in the hollow groove with a filling thickness of more than 10 μm.

其中,所述模造層的厚度在10μm至120μm之間;所述基底層的厚度在10μm至250μm之間。 Wherein, the thickness of the molding layer is between 10 μm and 120 μm; the thickness of the base layer is between 10 μm and 250 μm.

其中,特別是所述所述鏤空槽溝係貫穿設置於所述模造層之上表面與下表面。 Wherein, in particular, the hollow groove system is provided through the upper surface and the lower surface of the molding layer.

其中,所述導電體係由液態狀的導電體前體烘乾後所形成者,所述導電體前體含有導電金屬與溶劑,所述導電金屬的材料係選自於金、銀或其合金之中的一種或幾種的混合物,但實施的材料範圍不以前述材料為限,對其之選擇係視其尋求之特定效能特性而定,例如是電阻率、耐焊性、黏結性、黏著力、遷移電阻及類似特性。 Wherein, the conductive system is formed by drying a liquid conductor precursor, the conductor precursor contains a conductive metal and a solvent, and the material of the conductive metal is selected from gold, silver or alloys thereof. One or a mixture of several of them, but the range of materials to be implemented is not limited to the aforementioned materials. The choice of materials depends on the specific performance characteristics they seek, such as electrical resistivity, solder resistance, adhesion, and adhesion. , Migration resistance and similar characteristics.

其中,特別是所述導電體前體為含銀Ag重量比80%以上的導電膠。 Among them, in particular, the conductor precursor is a conductive paste containing more than 80% by weight of silver and Ag.

本「新型內容」係以簡化形式介紹一些選定概念,在下文之「實施方式」中將進一步闡明本新型的其他功能及技術特徵,熟習本技術者熟讀文中的說明後即可據以實現本新型。 This "new content" introduces some selected concepts in a simplified form. The following "implementation mode" will further clarify other functions and technical features of the new model. Those who are familiar with the technology can read the descriptions in the text and realize this New.

100:模造層 100: Molded layer

101:上表面 101: upper surface

102:下表面 102: lower surface

110:鏤空槽溝 110: Hollow groove

200:基底層 200: basal layer

300:導電體 300: Conductor

800:陶瓷生胚 800: ceramic embryo

900:電極圖案 900: Electrode pattern

圖1為本創作實施例之模造層的平面圖。 Figure 1 is a plan view of the molding layer of the creative embodiment.

圖2為圖1在II-II截線部位的側面剖示圖。 Fig. 2 is a side cross-sectional view of Fig. 1 at the section of line II-II.

圖3為本創作實施例之模造層與基底層疊合的側面剖示圖。 Fig. 3 is a side cross-sectional view of the laminated layer of the molded layer and the base of the creative embodiment.

圖4為本創作實施例之電子器件單元結構的側面剖示圖。 Fig. 4 is a side cross-sectional view of the electronic device unit structure of the creative embodiment.

圖5為傳統LTCC手段製作之電子器件單元結構的側面剖示圖。 Fig. 5 is a side cross-sectional view of an electronic device unit structure produced by traditional LTCC means.

於下文中將以製作具有40μm電極厚度之導電圖案的低溫共燒陶瓷(LTCC)電子器件單元結構為實施例,進一步闡明本創作的技術特徵,其中,為提供更清楚的描述及更易理解本創作的技術特徵,圖式內各部分並沒有依照其相對尺寸繪圖,某些尺寸與其他相關尺度相比已經被誇張;不相關之細節部分也未完全繪出,以求圖式的簡潔。 In the following, the production of a low-temperature co-fired ceramic (LTCC) electronic device unit structure with a conductive pattern of 40 μm electrode thickness will be taken as an example to further clarify the technical features of this creation, among which, to provide a clearer description and easier understanding of this creation The technical characteristics of the various parts of the drawing are not drawn according to their relative dimensions. Some dimensions have been exaggerated compared with other relevant scales; the irrelevant details are not completely drawn, in order to simplify the drawing.

如后附各圖所示,本創作實施例的改進的低溫共燒陶瓷(LTCC)電子器件單元結構包含一模造層100、一基底層200及導電體300;考慮到低介電損耗及導體損耗的影響因素,該模造層100及基底層200係採用具低介電常數及低介電損耗的陶瓷材料。在本實施例中,該模造層100使用厚度約為40μm的陶瓷生 胚,通過切割裝置(例如是沖模機)在該模造層100裁切出所需的電極圖模,如圖1及圖2所示,該電極圖模包含至少一鏤空槽溝110,該鏤空槽溝110的寬度在80μm以上,例如是100μm,且呈貫穿設置於該模造層的上表面101與下表面102。 As shown in the attached figures, the improved low-temperature co-fired ceramic (LTCC) electronic device unit structure of this creative embodiment includes a molding layer 100, a base layer 200, and a conductor 300; considering low dielectric loss and conductor loss Influencing factors of, the molding layer 100 and the base layer 200 are made of ceramic materials with low dielectric constant and low dielectric loss. In this embodiment, the molding layer 100 uses a ceramic green sheet with a thickness of about 40 μm. The blank is cut by a cutting device (for example, a die machine) on the molding layer 100 to cut out the desired electrode pattern. As shown in FIGS. 1 and 2, the electrode pattern includes at least one hollow groove 110, and the hollow groove The width of the groove 110 is greater than 80 μm, for example, 100 μm, and is provided through the upper surface 101 and the lower surface 102 of the molding layer.

如圖3所示,該基底層200通過疊壓機對位貼合而密接疊合於該模造層的下表面102,二者交疊的面積範圍包含設置電極圖模的區域部分,使該等鏤空槽溝110的下方開口形成封閉;該基底層200可對該模造層100提供支撐力以及增進組合結構的強度,在本實施例中該基底層200是採用厚度約略相同於前述模造層100的厚度。 As shown in FIG. 3, the base layer 200 is closely laminated on the lower surface 102 of the molded layer by aligning with a laminator, and the overlapping area of the two includes the area where the electrode pattern is set, so that the The lower opening of the hollow groove 110 is closed; the base layer 200 can provide support to the molded layer 100 and increase the strength of the combined structure. In this embodiment, the base layer 200 is made of a thickness approximately the same as that of the aforementioned molded layer 100 thickness.

再如圖4所示,該導電體300形成在前述模造層100的鏤空槽溝110內,具有與該模造層100約略相同的厚度,亦即該導電體300的厚度為40μm。該導電體300的形成方法大體上是通過將呈液態狀的導電體前體,例如銀(Ag)含量80%以上的導電膠,塗布填充到該電極圖模的鏤空槽溝110之內,再對該導電體前體進行加熱烘乾,從而在鏤空槽溝110內形成乾固的導電體300,據此形成所需的電極圖案,然後接續再對所述電子器件單元結構實施堆疊和層壓(stacking and lamination)、燒結(burn-out and sintering)等後續的LTCC製程以完成整個電子器件製作。 As shown in FIG. 4 again, the conductor 300 is formed in the hollow groove 110 of the aforementioned molding layer 100, and has approximately the same thickness as the molding layer 100, that is, the thickness of the conductor 300 is 40 μm. The method for forming the conductor 300 is generally by coating and filling a liquid conductor precursor, such as a conductive paste with a silver (Ag) content of more than 80%, into the hollow groove 110 of the electrode pattern, and then The conductive body precursor is heated and dried to form a dry conductive body 300 in the hollow groove 110, thereby forming the required electrode pattern, and then successively stacking and laminating the electronic device unit structure (stacking and lamination), sintering (burn-out and sintering) and other follow-up LTCC process to complete the entire electronic device manufacturing.

綜上所述可知,本創作所提供的低溫共燒陶瓷(LTCC)電子器件單元結構,其可依電子器件設計上所需求的電極厚度,而選用與所需電極厚度相同厚度或略大厚度的模造層,並在該模造層上切割出鏤空槽溝以形成所需的電極圖模,然後將一基底層壓貼疊合於該模造層的一表面,接續將導電材料按所需的定量填充至所述電極圖模的鏤空槽溝中,再經對導電材料加熱烘乾之後,以在所 述鏤空槽溝中形成所需厚度導電體,據此獲得所需電極厚度的電極圖案;因此,本創作適合應用於製作需要較大電極厚度的大功率效能電子器件。 In summary, it can be seen that the low-temperature co-fired ceramic (LTCC) electronic device unit structure provided by this creation can be selected according to the electrode thickness required by the electronic device design, and the thickness of the electrode is the same or slightly larger. Molding layer, and cutting hollow grooves on the molding layer to form the required electrode pattern, and then laminating a substrate on a surface of the molding layer, and then filling the conductive material according to the required quantity Into the hollow grooves of the electrode pattern, and after heating and drying the conductive material, Conductors with required thickness are formed in the hollow grooves, and an electrode pattern with required electrode thickness is obtained accordingly; therefore, this creation is suitable for the production of high-power efficiency electronic devices that require a larger electrode thickness.

雖然本創作已以實施例揭露如上,然其並非用以限定本創作,任何熟習此技術者,在不脫離本創作之精神和範圍內,當可作各種之更動與潤飾,因此本創作之保護範圍當視後附之創作申請專利範圍所界定者為準。 Although this creation has been disclosed in the above examples, it is not intended to limit this creation. Anyone who is familiar with this technique can make various changes and modifications without departing from the spirit and scope of this creation. Therefore, this creation is protected. The scope shall be subject to the definition of the attached creation application patent scope.

100:模造層 100: Molded layer

110:鏤空槽溝 110: Hollow groove

200:基底層 200: basal layer

300:導電體 300: Conductor

Claims (7)

一種改進的低溫共燒陶瓷(LTCC)電子器件單元結構,包含: 一模板層,為一陶瓷材料層,具有由鏤空槽溝所形成的電極圖模,所述鏤空槽溝的深度介於10µm至120µm之間,寬度在80µm以上; 一基底層,為一陶瓷材料層,其與所述模造層密接疊合在一起,且二者交疊的面積範圍至少包含設置所述電極圖模的區域部分;以及 導電體,其被填設於所述基底層與所述模板層疊合後的所述鏤空槽溝中,所述導電體的填充厚度在10µm以上。 An improved low-temperature co-fired ceramic (LTCC) electronic device unit structure, including: A template layer, a ceramic material layer, with an electrode pattern formed by hollow grooves, the depth of the hollow grooves is between 10 µm and 120 µm, and the width is more than 80 µm; A base layer is a ceramic material layer, which is closely laminated with the molding layer, and the overlapping area of the two includes at least the area where the electrode pattern is set; and The conductive body is filled in the hollow groove after the base layer and the template are laminated, and the filling thickness of the conductive body is more than 10 μm. 如請求項1所述之改進的低溫共燒陶瓷(LTCC)電子器件單元結構,其中,所述模造層的厚度在10µm至120µm之間。The improved low-temperature co-fired ceramic (LTCC) electronic device unit structure as described in claim 1, wherein the thickness of the molding layer is between 10 μm and 120 μm. 如請求項1所述之改進的低溫共燒陶瓷(LTCC)電子器件單元結構,其中,所述基底層的厚度在10µm至250µm之間。The improved low-temperature co-fired ceramic (LTCC) electronic device unit structure as described in claim 1, wherein the thickness of the base layer is between 10 μm and 250 μm. 如請求項1所述之改進的低溫共燒陶瓷(LTCC)電子器件單元結構,其中,所述所述鏤空槽溝係貫穿設置於所述模造層之上表面與下表面。The improved low-temperature co-fired ceramic (LTCC) electronic device unit structure according to claim 1, wherein the hollow grooves are formed through the upper surface and the lower surface of the molding layer. 如請求項1所述之改進的低溫共燒陶瓷(LTCC)電子器件單元結構,其中,所述導電體係由液態狀的導電體前體烘乾後所形成者,所述導電體前體含有導電金屬與溶劑。The improved low-temperature co-fired ceramic (LTCC) electronic device unit structure according to claim 1, wherein the conductive system is formed by drying a liquid conductor precursor, and the conductor precursor contains conductive Metals and solvents. 如請求項5所述之改進的低溫共燒陶瓷(LTCC)電子器件單元結構,其中,所述導電金屬的材料係選自於金、銀或其合金之中的一種或幾種的混合物。The improved low-temperature co-fired ceramic (LTCC) electronic device unit structure according to claim 5, wherein the material of the conductive metal is selected from one or a mixture of gold, silver or alloys thereof. 如請求項5所述之改進的低溫共燒陶瓷(LTCC)電子器件單元結構,其中,所述導電體前體為含銀重量比80%以上的導電膠。The improved low-temperature co-fired ceramic (LTCC) electronic device unit structure described in claim 5, wherein the conductor precursor is a conductive paste containing more than 80% silver by weight.
TW110201375U 2021-02-04 2021-02-04 Improved low temperature co-fired ceramic (LTCC) electronic device unit structure TWM613963U (en)

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