TWM568020U - High reflectivity solder mask (solder resist) film - Google Patents

Abstract

一種高反射率防焊阻劑薄膜，包括：未完全固化防焊層及層合於未完全固化防焊層一表面上的載體層。所述未完全固化防焊層其厚度為10-200 µm，且其對可見光波長範圍中至少一部份波長的光反射率大於80％。A high reflectivity solder resist film comprising: an incompletely cured solder resist layer and a carrier layer laminated to a surface of the incompletely cured solder resist layer. The incompletely cured solder mask has a thickness of 10-200 μm and a light reflectance of at least a portion of the wavelength in the visible wavelength range of greater than 80%.

Description

高反射率防焊阻劑薄膜High reflectivity solder resist film

本創作是關於一種應用於電路板的薄膜，特別是關於一種用於在電路板表面形成防焊層的高反射率防焊阻劑薄膜。The present invention relates to a film applied to a circuit board, and more particularly to a high reflectance solder resist film for forming a solder resist layer on a surface of a circuit board.

電路板表面一般塗布有防焊層，並以防焊層將不需要焊接的部分導體加以遮蓋。於現有技術中，通常多以網版印刷的方式於電路板表面形成防焊層。於現有技術中，多於電路板表面形成綠色或黑色的防焊層。然而，當將發光元件，例如: 發光二極體晶片或電激發光(Electro Luminescence, EL)晶片設置於電路板上時，因綠色或黑色的防焊層的反射率不佳，容易造成發光元件所產生的光線為綠色或黑色的防焊層所吸收，而導致發光元件整體亮度的下降。另一方面，由於防焊油墨在塗布前，電路板表面已有電路形成，如此使得所形成防焊層的表面平整度不佳，讓照射至防焊層的光線朝向非出光面的方向進行反射，亦因此造成發光元件整體亮度的下降。The surface of the board is typically coated with a solder mask and the solder mask is used to cover portions of the conductor that do not need to be soldered. In the prior art, a solder resist layer is usually formed on the surface of the circuit board by screen printing. In the prior art, a green or black solder resist layer is formed on the surface of the circuit board. However, when a light-emitting element such as a light-emitting diode wafer or an electroluminescence (EL) wafer is disposed on a circuit board, the reflectance of the green or black solder resist layer is poor, and the light-emitting element is easily caused. The generated light is absorbed by the green or black solder resist layer, resulting in a decrease in the overall brightness of the light-emitting element. On the other hand, since the solder resist ink has a circuit formed on the surface of the circuit board before coating, the surface of the solder resist layer formed is not flat, and the light irradiated to the solder resist layer is reflected toward the non-light-emitting surface. Therefore, the overall brightness of the light-emitting element is lowered.

本創作之主要目的在於提供一種用以於電路板表面形成防焊層的高反射率防焊阻劑薄膜，且所形成的防焊層具有較佳的光反射率。The main purpose of the present invention is to provide a high reflectivity solder resist film for forming a solder resist layer on the surface of a circuit board, and the solder resist layer formed has a better light reflectivity.

為了達成上述及其他目的，本創作提供一種高反射率防焊阻劑薄膜，包括：未完全固化防焊層及載體層。其中，未完全固化防焊層的厚度為10-200 µm，且未完全固化防焊層具有相對的第一表面及一第二表面，而未完全固化防焊層對可見光波長範圍中至少一部份波長的光反射率大於80％。而載體層則層合於未完全固化防焊層的第一表面。In order to achieve the above and other objects, the present invention provides a high reflectivity solder resist film comprising: an under-cured solder resist layer and a carrier layer. Wherein, the thickness of the incompletely cured solder resist layer is 10-200 μm, and the fully cured solder resist layer has a first surface and a second surface, and the solder mask layer is not fully cured to at least one of the visible wavelength range The light reflectance of the wavelength is greater than 80%. The carrier layer is laminated to the first surface of the incompletely cured solder resist layer.

於上述較佳實施方式中，高反射率防焊阻劑薄膜更包括保護層，該保護層層合於未完全固化防焊層的第二表面。In the above preferred embodiment, the high reflectivity solder resist film further includes a protective layer laminated to the second surface of the incompletely cured solder resist layer.

於上述較佳實施方式中，未完全固化防焊層的厚度為10-50 µm。In the above preferred embodiment, the thickness of the incompletely cured solder resist layer is 10-50 μm.

於上述較佳實施方式中，載體層的厚度為10-150 µm。In the above preferred embodiment, the carrier layer has a thickness of 10 to 150 μm.

於上述較佳實施方式中，保護層的厚度為10-150 µm。In the above preferred embodiment, the protective layer has a thickness of 10 to 150 μm.

於上述較佳實施方式中，未完全固化防焊層對波長介於625-740 nm範圍中至少一部份波長的可見光的光反射率大於80％。In the above preferred embodiment, the incompletely cured solder resist has a light reflectance of greater than 80% for visible light having a wavelength of at least a portion of the wavelength in the range of 625-740 nm.

於上述較佳實施方式中，未完全固化防焊層對波長介於500-565 nm範圍中至少一部份波長的可見光的光反射率大於80％。In the above preferred embodiment, the incompletely cured solder resist has a light reflectance greater than 80% for visible light having a wavelength of at least a portion of the wavelength in the range of 500-565 nm.

於上述較佳實施方式中，未完全固化防焊層對波長介於485-500 nm範圍中至少一部份波長的可見光的光反射率大於80％。In the above preferred embodiment, the incompletely cured solder resist has a light reflectance greater than 80% for visible light having a wavelength of at least a portion of the wavelength in the range of 485-500 nm.

請參閱第1圖，第1圖為本創作所提供之高反射率防焊阻劑薄膜的剖面圖。於第1圖中，高反射率防焊阻劑薄膜1包括：未完全固化防焊層10、載體層11以及保護層12。所述未完全固化防焊層10具有第一表面101及第二表面102。其中，載體層11設置並層合於未完全固化防焊層10的第一表面101，並用以承載未完全固化防焊層10，而保護層12設置並層合於未完全固化防焊層10的第二表面102，並用以避免未完全固化防焊層10之第二表面102受到污染。Please refer to Fig. 1. Fig. 1 is a cross-sectional view of the high reflectivity solder resist film provided by the present invention. In FIG. 1, the high reflectance solder resist film 1 includes an under-cured solder resist layer 10, a carrier layer 11, and a protective layer 12. The incompletely cured solder resist layer 10 has a first surface 101 and a second surface 102. Wherein, the carrier layer 11 is disposed and laminated on the first surface 101 of the incompletely cured solder resist layer 10, and is used to carry the incompletely cured solder resist layer 10, and the protective layer 12 is disposed and laminated to the incompletely cured solder resist layer 10. The second surface 102 is used to avoid contamination of the second surface 102 of the solder resist layer 10 that is not fully cured.

所述未完全固化防焊層10的厚度d1介於10 µm至200 µm之間，於一較佳的實施方式中，未完全固化防焊層10的厚度d1介於10 µm至150 µm之間。所述載體層11為一膜狀載體，且與未完全固化防焊層10之第一表面101相接的表面可為光滑面或霧面，而載體層11可為聚乙烯對苯二甲酸酯（PET）或其他聚酯薄膜、聚醯亞胺薄膜、聚醯胺醯亞胺薄膜、聚丙烯薄膜、聚苯乙烯薄膜等，其厚度d2較佳介於10 µm至150 µm之間。所述保護層12可為：聚乙烯薄膜、具四氟乙烯薄膜、聚丙烯薄膜或經表面處理的紙，其厚度d3較佳介於10 µm至150 µm之間。The thickness d1 of the incompletely cured solder resist layer 10 is between 10 μm and 200 μm. In a preferred embodiment, the thickness d1 of the fully cured solder resist layer 10 is between 10 μm and 150 μm. . The carrier layer 11 is a film-shaped carrier, and the surface contacting the first surface 101 of the fully cured solder resist layer 10 may be a smooth surface or a matte surface, and the carrier layer 11 may be polyethylene terephthalic acid. The ester (PET) or other polyester film, polyimine film, polyamidimide film, polypropylene film, polystyrene film, etc., preferably have a thickness d2 of between 10 μm and 150 μm. The protective layer 12 may be a polyethylene film, a film of tetrafluoroethylene, a film of polypropylene or a surface treated paper, and the thickness d3 is preferably between 10 μm and 150 μm.

請繼續參閱圖1，未完全固化防焊層10例如可為熱硬化防焊油墨或光硬化防焊油墨類型之雙劑型防焊油墨（double liquid type solder mask ink），其成分例如包括：防焊主劑、著色劑、稀釋劑及硬化劑（Hardener）。Referring to FIG. 1 , the fully cured solder resist layer 10 may be, for example, a double-layer type solder mask ink of a thermosetting solder resist ink or a photo-curable solder resist ink type, and the composition thereof includes, for example, solder resist. Main agent, colorant, diluent and hardener (Hardener).

所述防焊主劑主要包含光可成像防焊樹酯，且光可成像防焊樹酯可為：含羧基光可成像樹酯、併用環氧樹酯之含羧基光可成像樹酯或併用熱硬化性樹酯、光硬化性樹酯之含羧基光可成像樹酯。於一較佳的實施方式中，光可成像防焊樹酯包括：不飽和羧酸與含不飽和基化合物的共聚物、含羧基二醇化合物與二醇化合物的加成聚合物中之至少一者，且含羧基光可成像樹酯的酸價可介於20-200 mgKOH/g，重量平均分子量可介於2000-150000。另一方面，防焊主劑除了光可成像防焊樹酯外，亦可能含有其它電子材料領域中習知的其他添加劑，例如：有機溶劑、抗氧化劑、充填劑、分散劑、可塑劑、抗靜電劑、抗老化劑、紫外線吸收劑、消泡劑、熱聚合防止劑、耦合劑、難燃劑、防黴劑、平坦劑、增黏劑、脫膜劑、表面改質劑、安定劑。The solder resist main agent mainly comprises a photoimageable solder resist resin, and the photoimageable solder resist resin can be: a carboxyl group-containing photoimageable resin, a carboxyl group-containing photoimageable resin with epoxy resin or a combination thereof Carboxyl photoimageable resin of thermosetting resin, photocurable resin. In a preferred embodiment, the photoimageable solder resist resin comprises at least one of a copolymer of an unsaturated carboxylic acid and an unsaturated group-containing compound, an addition polymer of a carboxyl group-containing diol compound and a diol compound. Further, the carboxyl group-containing photoimageable resin may have an acid value of 20 to 200 mgKOH/g and a weight average molecular weight of 2,000 to 150,000. On the other hand, the solder resist main agent may contain other additives conventionally known in the field of electronic materials in addition to photoimageable solder resist resins, such as organic solvents, antioxidants, fillers, dispersants, plasticizers, and anti-wear agents. Electrostatic agent, anti-aging agent, ultraviolet absorber, antifoaming agent, thermal polymerization inhibitor, coupling agent, flame retardant, antifungal agent, flat agent, tackifier, release agent, surface modifier, stabilizer.

所述著色劑例如為白色著色劑，使得未完全固化防焊層10於固化後，對可見光波長範圍中至少一部份波長的光反射率大於80％，其中，所述可見光波長介於625 nm至740 nm之間、介於500 nm至565 nm之間或介於485 nm至500 nm之間。The colorant is, for example, a white colorant such that after curing, the solder resist 10 has a light reflectance of at least a portion of the wavelength in the visible wavelength range of greater than 80% after curing, wherein the visible wavelength is between 625 nm. Between 740 nm, between 500 nm and 565 nm, or between 485 nm and 500 nm.

所述稀釋劑用以調整未完全固化防焊層10的黏度，例如將黏度調整至10 dPa‧s 至200 dPa‧s之間，使得未完全固化防焊層10可均勻的形成於載體層11之上。於一較佳實施方式中，未完全固化防焊層10的黏度介於10 dPa‧s至100 dPa‧s之間。所述稀釋劑可為：二甲基乙醯胺、甲基乙基酮、環己酮、甲苯、二甲苯、四甲基苯、溶纖劑、甲基溶纖劑、丁基溶纖劑、卡必醇、甲基卡必醇、丁基卡必醇、丙二醇單甲基醚、二丙二醇單甲基醚、二丙二醇二乙基醚、二乙二醇單甲基醚乙酸酯、三丙二醇單甲基醚、乙酸乙基酯、乙酸丁基酯、乳酸丁基酯、醋酸纖維素、丁基醋酸纖維素、卡必醇乙酸酯、丁基卡必醇乙酸酯、丙二醇單甲基醚乙酸酯、二丙二醇單甲基醚乙酸酯、碳酸丙烯酯、脂肪族烴類、石油醚、石腦油、溶煤石油精等之石油系溶劑中之至少一者。The diluent is used to adjust the viscosity of the incompletely cured solder resist layer 10, for example, the viscosity is adjusted to between 10 dPa‧s and 200 dPa‧s, so that the fully cured solder resist layer 10 can be uniformly formed on the carrier layer 11 Above. In a preferred embodiment, the adhesion of the fully cured solder mask 10 is between 10 dPa‧s and 100 dPa‧s. The diluent may be: dimethylacetamide, methyl ethyl ketone, cyclohexanone, toluene, xylene, tetramethylbenzene, cellosolve, methyl cellosolve, butyl cellosolve, carbene Alcohol, methyl carbitol, butyl carbitol, propylene glycol monomethyl ether, dipropylene glycol monomethyl ether, dipropylene glycol diethyl ether, diethylene glycol monomethyl ether acetate, tripropylene glycol monomethyl Ether, ethyl acetate, butyl acetate, butyl lactate, cellulose acetate, cellulose butyl acetate, carbitol acetate, butyl carbitol acetate, propylene glycol monomethyl ether At least one of a petroleum solvent such as an acid ester, dipropylene glycol monomethyl ether acetate, propylene carbonate, aliphatic hydrocarbons, petroleum ether, naphtha, or petroleum-soluble petroleum spirit.

前述硬化劑可能包括：光聚合起使劑、硬化助劑、硬化觸媒中之至少一者。所述光聚合起使劑可為膦氧化物類光聚合起使劑。所述硬化助劑包括：多官能酚化物、聚羧酸及其酸酐、脂肪族或芳香族之一級胺或二級胺、聚醯胺樹酯、異氰酸酯化合物中之至少一者。所述硬化觸媒包括：為環氧化合物、氧雜環丁烷化合物中之至少一者。所述硬化劑也可能進一步含有其他電子材料領域中習知的其他添加劑，例如：有機溶劑、抗氧化劑、充填劑、分散劑、著色劑、可塑劑、抗靜電劑、抗老化劑、紫外線吸收劑、消泡劑、熱聚合防止劑、耦合劑、難燃劑、防黴劑、平坦劑、增黏劑、脫膜劑、表面改質劑、安定劑。The foregoing hardener may include at least one of a photopolymerization initiator, a hardening aid, and a hardening catalyst. The photopolymerization initiator may be a phosphine oxide photopolymerization initiator. The hardening aid includes at least one of a polyfunctional phenolate, a polycarboxylic acid and an anhydride thereof, an aliphatic or aromatic monoamine or a secondary amine, a polyamine resin, and an isocyanate compound. The hardening catalyst includes at least one of an epoxy compound and an oxetane compound. The hardener may also further contain other additives conventional in the field of other electronic materials, such as: organic solvents, antioxidants, fillers, dispersants, colorants, plasticizers, antistatic agents, anti-aging agents, ultraviolet absorbers. , antifoaming agent, thermal polymerization inhibitor, coupling agent, flame retardant, antifungal agent, flat agent, tackifier, release agent, surface modifier, stabilizer.

由於所形成之防焊層的加工誤差極小，因此當以表面貼焊技術（Surface Mount Technology, SMT）將電子零件焊接在電路板時，更可有效降低電子零件焊接的公差。另一方面，由於在電路板表面所形成之防焊層的表面平整度極佳，且其對可見光波長範圍中至少一部份波長的光反射率大於80％，因此當電路板上設置有發光元件，例如：發光二極體晶片或電激發光晶片時，更可有效提升發光元件整體的亮度。Since the processing error of the formed solder resist layer is extremely small, when the electronic component is soldered to the circuit board by Surface Mount Technology (SMT), the tolerance of soldering of the electronic component can be effectively reduced. On the other hand, since the surface of the solder resist layer formed on the surface of the circuit board is excellent in flatness and the light reflectance of at least a part of the wavelength in the visible light wavelength range is greater than 80%, the light is disposed on the circuit board. When the element is, for example, a light-emitting diode wafer or an electroluminescent wafer, the brightness of the entire light-emitting element can be effectively improved.

需進步說明的是，高反射率防焊阻劑薄膜1需在未完全固化防焊層10完全硬化前層合於電路板表面。較佳者，在高反射率防焊阻劑薄膜1製作完成後的三天內，將未完全固化防焊層10層合於電路板表面，所述電路板的基材可以是軟板或硬板，當所述基材是軟板時，該基材例如是以聚醯亞胺（PI）製成。在可能的實施方式中，高反射率防焊阻劑薄膜1在經過乾燥處理後，毋須貼覆保護層12即直接層合於電路板表面。在可能的實施方式中，貼覆有保護層12的高反射率防焊阻劑薄膜1先被收捲，而後再移置至壓合機所屬產線進行所述層合作業，或將其放置於低溫環境下進行保存。It should be noted that the high reflectivity solder resist film 1 needs to be laminated to the surface of the board before the fully cured solder resist layer 10 is completely cured. Preferably, the incompletely cured solder resist layer 10 is laminated on the surface of the circuit board within three days after the high reflectance solder resist film 1 is completed, and the substrate of the circuit board may be a soft board or a hard A plate, when the substrate is a soft plate, is made of, for example, polyimine (PI). In a possible embodiment, the high reflectivity solder resist film 1 is directly laminated to the surface of the circuit board after being subjected to a drying process without attaching the protective layer 12. In a possible embodiment, the high reflectivity solder resist film 1 coated with the protective layer 12 is first wound up, and then moved to the line of the press machine for the layer cooperation or placed. Store in a low temperature environment.

而在電路板上所形成的防焊層需要開窗的場合，可進一步對防焊層進行曝光、顯影作業，所述曝光作業可在載體層11移除前或移除後進行，當曝光作業在載體層11移除前進行時，所述載體層11為透明或半透明，而可讓曝光作業所照射的光線通過載體層11。此外，可依據防焊層的熱硬化及/或光硬化特性，再行對電路板進行烘烤或照射紫外線，使得轉置至電路板表面的未完全固化防焊層10完全硬化。When the solder resist layer formed on the circuit board needs to open the window, the solder resist layer may be further exposed and developed. The exposure operation may be performed before or after the carrier layer 11 is removed, when the exposure operation is performed. When the carrier layer 11 is performed before removal, the carrier layer 11 is transparent or translucent, and the light irradiated by the exposure operation can pass through the carrier layer 11. In addition, the circuit board may be baked or irradiated with ultraviolet light according to the thermal hardening and/or photohardening characteristics of the solder resist layer, so that the incompletely cured solder resist layer 10 transposed to the surface of the circuit board is completely hardened.

1‧‧‧高反射率防焊阻劑薄膜1‧‧‧High reflectivity solder resist film

10‧‧‧未完全固化防焊層 10‧‧‧Incompletely cured solder mask

101‧‧‧第一表面 101‧‧‧ first surface

102‧‧‧第二表面 102‧‧‧ second surface

11‧‧‧載體層 11‧‧‧Carrier layer

12‧‧‧保護層 12‧‧‧Protective layer

d1、d2、d3‧‧‧厚度 D1, d2, d3‧‧ thickness

第1圖為本創作所提供之高反射率防焊阻劑薄膜的剖面圖。Figure 1 is a cross-sectional view of a high reflectivity solder resist film provided by the present invention.

Claims (8)

一種高反射率防焊阻劑薄膜，包括： 一未完全固化防焊層，其厚度為10-200 µm，該未完全固化防焊層具有相對的一第一表面及一第二表面，該未完全固化防焊層對可見光波長範圍中至少一部份波長的光反射率大於80％；以及 一載體層，層合於該未完全固化防焊層的第一表面。A high reflectivity solder resist film comprising: an incompletely cured solder resist layer having a thickness of 10 to 200 μm, the incompletely cured solder resist layer having a first surface and a second surface opposite to each other The fully cured solder resist layer has a light reflectance greater than 80% for at least a portion of the wavelength in the visible wavelength range; and a carrier layer laminated to the first surface of the incompletely cured solder resist layer. 如請求項1所述的高反射率防焊阻劑薄膜，更包括一保護層，層合於該未完全固化防焊層的第二表面。The high reflectivity solder resist film according to claim 1, further comprising a protective layer laminated on the second surface of the incompletely cured solder resist layer. 如請求項1所述的高反射率防焊阻劑薄膜，其中該未完全固化防焊層的厚度為10-50 µm。The high reflectance solder resist film according to claim 1, wherein the incompletely cured solder resist layer has a thickness of 10 to 50 μm. 如請求項1所述的高反射率防焊阻劑薄膜，其中該載體層的厚度為10-150 µm。The high reflectance solder resist film according to claim 1, wherein the carrier layer has a thickness of 10 to 150 μm. 如請求項2所述的高反射率防焊阻劑薄膜，其中該保護層的厚度為10-150 µm。The high reflectance solder resist film according to claim 2, wherein the protective layer has a thickness of 10 to 150 μm. 如請求項1所述的高反射率防焊阻劑薄膜，其中該未完全固化防焊層對波長介於625-740 nm範圍中至少一部份波長的可見光的光反射率大於80％。The high reflectivity solder resist film of claim 1, wherein the incompletely cured solder resist has a light reflectance of greater than 80% for visible light having a wavelength of at least a portion of the wavelength in the range of 625-740 nm. 如請求項1所述的高反射率防焊阻劑薄膜，其中該未完全固化防焊層對波長介於500-565 nm範圍中至少一部份波長的可見光的光反射率大於80％。The high reflectivity solder resist film of claim 1, wherein the incompletely cured solder resist has a light reflectance of greater than 80% for visible light having a wavelength of at least a portion of the wavelength in the range of 500-565 nm. 如請求項1所述的高反射率防焊阻劑薄膜，其中該未完全固化防焊層對波長介於485-500 nm範圍中至少一部份波長的可見光的光反射率大於80％。The high reflectivity solder resist film of claim 1, wherein the incompletely cured solder resist has a light reflectance of greater than 80% for visible light having a wavelength of at least a portion of the wavelength in the range of 485-500 nm.