M434302 五、新型說明： 【新型所屬之技術領域】 [0001] 本創作涉及一種加熱裝置，具體涉及—種用於等離子處 理器的氣體分佈裝置的加熱裝置。 【先前技術】 [_ %有等離子反應腔通常都包括一個放置待加工晶圓的基 座，基座内通有連接到射頻電源的電極和其他控溫裝置 。於基座相對的是一個氣體分佈裝置比如典型的氣體喷 淋頭，通過氣體噴淋頭將混合好的反應氣體按要求向晶 圓表面均勻的喷射出去。由於等離子加工過程中反應腔 内溫度會被射頻能量加熱而升高，所以氣體喷淋頭以及 周圍會被加熱的部件都會隨著溫度的變化而熱脹冷縮。 每個等離子加工步驟完成後都會熄滅等離子，將加工好 的晶圓送出並準備好加工下一片晶圓，或者對反應腔清 洗。但是中間的這段非等離子處理的時間段由於反應腔 工作狀態不同’射蘋能量供應不同所以氣體喷淋頭的溫 度不同°隨著加工週斯的進行這樣的溫度交替變化會造 成反應腔内部件交替的伸縮，這會造成部件之間的磨損 °對於氣*體嘴淋頭造成影響更大，因為氣體噴淋頭的氣 體嗔口現在直徑都是毫米級，甚至只有卜2個毫米，相對 於整個氣體噴淋頭大於300mm的直徑來說，這樣的伸縮很 +易1^成摩擦顆粒物堵塞噴口或者造成不同氣體喷口之 間貫穿漏氣。要防止這一問題的產生，現有技術通常需 要對氣體嘴淋碩及其附屬部件進行控溫，使其在運行狀 態維持在一個穩定的溫度。這些控溫裝置通常安裝在氣 10022244_單編號 A0101 第3頁/共12頁 1013084626-0 M434302 體噴淋頭背面，由大面積的控溫板組成，控溫板上安裝 有加熱裝置如電阻絲或者散熱裝置。加熱裝置可以安裝 在控溫板内，但是這樣就對控溫板的加工提高了難度。 加熱裝置也可以安裝在控溫板上方與控溫板背面也就是 上表面緊貼。現有技術常見的加熱裝置的下表面為了與 控溫板上表面匹配都是平面的。但是這樣的結構存在一 些缺陷^加熱裝置和控溫板之間導熱能力不夠，且需要 額外固定裝置以防止加熱裝置在控溫板上移動。 【新型内容】 [0003] 未創作提供了一種用於刻蝕晶片的加熱裝置，可以增加 加熱器與控溫板的接觸面積，同時使加熱器對基座加熱 時溫度上升均勻。 為了達到上述目的，本創作通過以下技術方案實現： 一種用於等離子處理器的加熱裝置包括：一個等離子反 應腔，反應腔内包括一個基座以放置待加工工件，一個 氣體分佈裝置安裝在反應腔頂部與基座相對，該氣體分 佈裝置與反應氣體氣源連接，氣體分佈裝置上方包括一 控溫板，其特點是： 所述控溫板上包括一加熱裝置，該加熱裝置包含發熱器 和導熱塊，發熱器安裝在導熱塊中，導熱塊具有一與控 溫板上溝槽形狀匹配的接觸介面，該接觸介面與控溫板 平面具有傾斜角度，且該角度大於5度小於70度。 所述的導熱塊接觸介面與控溫板平面具有傾斜角度大於 15度小於60度。 所述的導熱塊與控溫板接觸介面的截面形狀呈V形或U形 10_4f 單编號 Α0101 第4頁/共12頁 1013084626-0 M434302 所述的發熱器採用電熱絲。 所述的導熱塊採用鋁材料，與發熱器通過釺焊或澆鑄為 一體。 所述導熱塊安裝在控溫板上表面。 一種用於等離子處理器的加熱裝置包括：一個等離子反 應腔，反應腔内包括一個基座以放置待加工工件，一個 氣體分佈裝置安裝在反應腔頂部與基座相對，該氣體分 佈裝置與反應氣體氣源連接，氣體分佈裝置上方包括一 控溫板，其特點是： 所述控溫板上包括一散熱裝置，該散熱裝置包含散熱器 和導熱塊，散熱器安裝在導熱塊中，導熱塊具有一與控 溫板上溝槽形狀匹配的接觸介面，該接觸介面與控溫板 平面具有傾斜角度，且該角度大於5度小於75度。 所述的導熱塊接觸介面與控溫板平面具有傾斜角度大於 15度小於60度。 本創作提供的一種用於等離子處理器的加熱裝置與現有 技術相比具有如下優點： 本射-作由於採用發熱器嵌設在導熱塊中，通過加熱導熱 塊，從而完成對控溫板的加熱，使控溫板的溫度上升的 均勻。 本創作由於導熱塊與控溫板接觸介面的截面形狀呈V形或 U形，增加了導熱面積。 【實施方式】 [0004] 下面結合第1圖~第2圖對本創作做進一步闡述，詳細描述 本創作的一個優選實施例 第1圖顯示了本創作等離子反應器的基本結構，其中包括 1(K)22244f單編號A0101 第5頁/共12頁 1013084626-0 M434302 反應腔壁100，反應腔下方還包括一個抽氣裝置l〇6 ^反 應腔内包括:ic裝BB圓的基座1〇，基座上可以是晶圓固定 裝置如靜電夾盤11晶圓12固定在靜電夾盤丨丨上。反應腔 上部有一個氣體分佈裝置包括氣體分佈板如業界常用的 氣體喷淋頭20，氣體噴淋頭上方包括一控溫板21，控溫 板上方包括氟在、部件101。反應氣體源41通過氣體管道43 流入氣體勿佈板20。控溫板上還包括加熱裝置μ對控溫 板21進行加熱。 如第2圖所示，一種用於等離子處理器的加熱裝置的細節 放大圖。氣體管道43穿過控溫板21向下方的氣體分佈板 20供應氣體。加熱裝置23包含發熱器230和導熱塊231和 導熱塊封閉片232 ’導熱塊231和導熱快封閉片232構成 的空間將發熱器固定在導熱塊中，且實現導熱塊與發熱 器良好的熱傳導。發熱器230嵌設在導熱塊231中，發熱 器230與導熱塊231合為一體。發熱器23〇可以是任何可 控的產生熱量的裝置如典型的電阻絲連择外部電源後可 控的產生需要的熱量。導熱塊231設置在控溫板内與導入 塊外形匹配的凹槽中。導熱塊231呈V形或U形。 1013084626-0 如第1圖〜第2圖所示，本創作現場應用時，將發熱器23〇 嵌設在導熱塊2中，在本實施例中發熱器230採用電熱絲 ，導熱塊231與封閉片均可採用鋁合金材料製成，發熱器 230與導熱塊231合為一體，最後將導熱塊231以呈v形或 U形的下凹式設置在控溫板21的凹槽中。加熱裝置23中的 發熱器230，導熱塊和封閉片可以通過澆注或釺焊的方法 構成整體部件，加熱裝置23與控溫板21也可以通過釺焊 或澆鑄的方式合為一體。發熱器230通過導線與外部的電 10022244产單编號A〇101 第6頁/共12頁 M434302 源電連接。當需要刻截晶片時，將發熱器23〇與外部電源 接通’ 片設置在基座10的上表面，導熱塊231隨著發熱 器230的發熱也-同發熱。導熱塊與控溫板之間接觸的 介面並不是所有表面都具有良好的導熱性的，兩者的介 面上存在大量凹凸^平叫獅4果沒有外部壓力的 緊壓，這些接觸面僅僅是點接觸狀態則導熱效率很差。 為了達到緊壓的目的需要額外的機構來將加熱裝置23壓 到控溫板本21上，這需要額外的機構和成本。本創作發 現這—問題提出了加熱裝置23與控溫板21之間的介面是 傾斜的，在整個傾斜面上都受到加熱裝置重力分量的擠 壓所以導熱效率很高，所以本創作在只改變導熱接觸面 的情況下實現了大幅提高有限效導熱面積的功能，提高 了導熱效率，節約f能源，而且由於接觸面嵌入導熱板 中所以不需要額外的固定裝置就可固定加熱裝置到控溫 板上。 综上所述，本創作提供的一種等離子處理器的加熱裝置 具有如下優點： 本創作由於採用發熱器230嵌設在導熱塊231中，通過加 …、導熱塊231，從雨完成對控溫板21的加熱，使控溫板21 的溫度上升的均勻。 本創作由於導熱塊231以呈V形或U形的下凹式嵌設在基座 3的凹槽31中，增加了導熱面積。也可以是其他類似的導 熱介面只要存在受壓的傾斜介面均可構成本創作的高效 導熱介面。其中傾斜介面與控溫板21的平面夹角越大則 導熱面積越大，但是隨著這個夾角的增加加熱裝置23的 第7頁/共12頁 重力在傾斜介面上的壓力就減小，所以導熱效率也會下 10022244^單編號 A0101 1013084626-0 M434302 降，所以本創作導熱介面與控溫板平面的夾角大於5度小 於70度時能達到較佳的效果，大於15度小於60能達到最 佳的導熱效果。導熱介面也可以部分是與控溫板平面平 行部分與控溫板平面傾斜的形成如梯形的截面。這樣的 形狀設計仍然大於傳統的方型截面的加熱裝置的導熱效 率。同樣的創作原理也可以應用到散熱的機構中，如第2 圖所示的加熱裝置内的發熱器230換成散熱器，將熱導出 控溫板時也可以應用本創作的連接結構，以提高熱傳導 效率，簡化安裝。散熱器可以是内部流有冷卻劑的金屬 管道，這些管道與外部的散熱裝置相連實現對控溫板的 高效散熱。 儘管本創作的内容已經通過上述優選實施例作了詳細介 紹，但應當認識到上述的描述不應被認為是對本創作的 限制。在本領域技術人員閱讀了上述内容後，對於本創 作的多種修改和替代都將是顯而易見的。因此，本創作 的保護範圍應由所附的權利要求來限定。 【圖式簡單說明】 [0005] 第1圖為本創作一種用於等離子處理器的加熱裝置的結構 不意圖， 第2圖為本創作一種用於等離子處理器的加熱裝置的細節 放大圖。 【主要元件符號說明】 [0006] 10安裝晶圓的基座 11靜電夾盤 12晶圓 臓244产單编號A〇101 第8頁/共12頁 1013084626-0 M434302 20氣體喷淋頭 21控溫板 23加熱裝置 41反應氣體源 43氣體管道 100反應腔壁 101氣密部件 106抽氣裝置 230發熱器 231導熱塊 232導熱塊封閉片M434302 V. New description: [New technical field] [0001] The present invention relates to a heating device, and in particular to a heating device for a gas distribution device of a plasma processor. [Prior Art] [_% The plasma reaction chamber usually includes a base on which the wafer to be processed is placed, and the base is connected to electrodes and other temperature control devices connected to the RF power source. Opposite the pedestal is a gas distribution device such as a typical gas shower head through which a mixed reaction gas is sprayed uniformly onto the surface of the wafer as required. Since the temperature in the reaction chamber is increased by the RF energy during plasma processing, the gas shower head and the surrounding heated parts will expand and contract with temperature. After each plasma processing step is completed, the plasma is extinguished, the processed wafer is sent out and ready to be processed, or the reaction chamber is cleaned. However, the period of the non-plasma treatment in the middle is different due to the different working conditions of the reaction chamber. The temperature of the gas shower head is different. As the processing cycle is performed, such temperature changes alternately to cause the components in the reaction chamber. Alternate expansion and contraction, which will cause wear between the parts. The gas nozzle of the gas sprinkler is now in millimeters, even only 2 mm, relative to the whole. In the case of a gas sprinkler having a diameter greater than 300 mm, such expansion and contraction is very easy to cause the friction particles to block the nozzle or cause a gas leakage between the different gas nozzles. To prevent this from happening, the prior art typically requires temperature control of the gas nozzle and its associated components to maintain a stable temperature during operation. These temperature control devices are usually installed on the back of the body sprinkler head, which is composed of a large-area temperature control plate, and a heating device such as a resistance wire is installed on the temperature control plate. Or a heat sink. The heating device can be installed in the temperature control plate, but this makes the processing of the temperature control plate more difficult. The heating device can also be mounted above the temperature control plate and against the back of the temperature control plate, that is, the upper surface. The lower surface of the prior art heating device is planar in order to match the surface of the temperature control plate. However, such a structure has some drawbacks: the thermal conductivity between the heating device and the temperature control plate is insufficient, and an additional fixing device is required to prevent the heating device from moving on the temperature control plate. [New Content] [0003] A non-authoring heating device for etching a wafer is provided, which can increase the contact area between the heater and the temperature control plate, and at the same time, the temperature rises evenly when the heater is heated to the susceptor. In order to achieve the above object, the present invention is achieved by the following technical solutions: A heating device for a plasma processor includes: a plasma reaction chamber including a susceptor for placing a workpiece to be processed, and a gas distribution device mounted in the reaction chamber The gas distribution device is connected to the reaction gas source, and the gas distribution device includes a temperature control plate, wherein the temperature control plate comprises a heating device, and the heating device comprises a heater and a heat conduction. The heat generating block is mounted in the heat conducting block, and the heat conducting block has a contact interface matched with the shape of the groove on the temperature control plate. The contact interface has an inclined angle with the plane of the temperature control plate, and the angle is greater than 5 degrees and less than 70 degrees. The thermal block contact interface and the temperature control plate plane have an inclination angle greater than 15 degrees and less than 60 degrees. The cross-sectional shape of the contact interface between the heat conducting block and the temperature control plate is V-shaped or U-shaped. 10_4f Single number Α0101 Page 4/Total 12 page 1013084626-0 The heating device described in M434302 uses a heating wire. The heat conducting block is made of aluminum material and is integrated with the heater by soldering or casting. The heat conducting block is mounted on a surface of the temperature control plate. A heating device for a plasma processor includes: a plasma reaction chamber including a susceptor for placing a workpiece to be processed, and a gas distribution device mounted on the top of the reaction chamber opposite to the susceptor, the gas distribution device and the reaction gas The gas source is connected to the gas distribution device, and comprises a temperature control plate, wherein: the temperature control plate comprises a heat dissipating device, the heat dissipating device comprises a heat sink and a heat conducting block, and the heat sink is installed in the heat conducting block, and the heat conducting block has A contact interface matching the shape of the groove on the temperature control plate, the contact interface having an inclined angle with the plane of the temperature control plate, and the angle is greater than 5 degrees and less than 75 degrees. The thermal block contact interface and the temperature control plate plane have an inclination angle greater than 15 degrees and less than 60 degrees. The heating device for plasma processor provided by the present invention has the following advantages compared with the prior art: The present invention is constructed by heating a heat conducting block by heating a heat conducting block by using a heater, thereby completing heating of the temperature regulating plate. , so that the temperature of the temperature control plate rises evenly. In this creation, the cross-sectional shape of the contact interface between the heat-conducting block and the temperature-control plate is V-shaped or U-shaped, which increases the heat-conducting area. [Embodiment] [0004] The present invention will be further described below in conjunction with Figs. 1 to 2, and a preferred embodiment of the present invention will be described in detail. Fig. 1 shows the basic structure of the present plasma reactor, including 1 (K). 22244f单单 A0101 Page 5 / Total 12 pages 1013084626-0 M434302 Reaction chamber wall 100, below the reaction chamber also includes a suction device l〇6 ^The reaction chamber includes: ic BB round base 1〇, base A wafer holder 12 such as an electrostatic chuck 11 wafer 12 can be attached to the electrostatic chuck. There is a gas distribution device on the upper part of the reaction chamber including a gas distribution plate such as a gas shower head 20 commonly used in the industry. The gas shower head includes a temperature control plate 21 above, and the fluorine plate is included above the temperature control plate. The reaction gas source 41 flows into the gas doping plate 20 through the gas pipe 43. The temperature control plate further includes a heating device μ for heating the temperature control plate 21. As shown in Fig. 2, an enlarged view of a detail of a heating device for a plasma processor. The gas pipe 43 is supplied through the temperature control plate 21 to the gas distribution plate 20 below. The heating means 23 comprises a space formed by the heater 230 and the heat conducting block 231 and the heat conducting block closing piece 232' heat conducting block 231 and the heat conducting quick closing piece 232 to fix the heater in the heat conducting block and to achieve good heat conduction between the heat conducting block and the heater. The heater 230 is embedded in the heat transfer block 231, and the heater 230 is integrated with the heat transfer block 231. The heater 23 can be any controllable heat generating device such as a typical electrical resistance wire that can be controlled to generate the required heat. The heat conducting block 231 is disposed in a groove in the temperature control plate that matches the shape of the lead-in block. The heat conducting block 231 has a V shape or a U shape. 1013084626-0 As shown in Fig. 1 to Fig. 2, in the field application, the heater 23 is embedded in the heat conducting block 2. In the embodiment, the heater 230 is made of a heating wire, and the heat conducting block 231 is closed. The sheet may be made of an aluminum alloy material, and the heater 230 is integrated with the heat conducting block 231. Finally, the heat conducting block 231 is recessed in a v-shape or a U-shape in the recess of the temperature regulating plate 21. The heater 230, the heat conducting block and the closing piece in the heating device 23 can be integrally formed by casting or brazing, and the heating device 23 and the temperature regulating plate 21 can also be integrated by means of brazing or casting. The heater 230 is electrically connected to the external power source 10022244 by the wire No. A 〇 101 page 6 / 12 page M434302 source. When the wafer needs to be diced, the heater 23 is connected to the external power source. The sheet is disposed on the upper surface of the susceptor 10. The heat-conducting block 231 is also heated by the heat generated by the heater 230. The interface between the thermal block and the temperature control plate does not have good thermal conductivity on all surfaces. There are a lot of irregularities on the interface between the two. The lions have no external pressure, and these contact faces are only points. The contact state is inefficient in thermal conductivity. In order to achieve the purpose of compaction, an additional mechanism is required to press the heating device 23 onto the temperature control plate 21, which requires additional mechanisms and costs. This creation finds that the problem is that the interface between the heating device 23 and the temperature control plate 21 is inclined, and the entire inclined surface is pressed by the gravity component of the heating device, so the heat conduction efficiency is high, so the creation is only changed. In the case of a thermally conductive contact surface, the function of greatly improving the finite effective heat conduction area is realized, the heat conduction efficiency is improved, the energy source is saved, and since the contact surface is embedded in the heat conducting plate, the heating device can be fixed to the temperature control plate without an additional fixing device. on. In summary, the heating device of the plasma processor provided by the present invention has the following advantages: The present invention is embedded in the heat conducting block 231 by using the heater 230, and the temperature control plate is completed from the rain by adding... The heating of 21 causes the temperature of the temperature control plate 21 to rise uniformly. The present invention increases the heat transfer area because the heat conducting block 231 is recessed in the V shape or the U shape in the recess 31 of the base 3. It is also possible that other similar thermal interfaces can form the highly efficient thermal interface of the present invention as long as there is a stressed tilt interface. Wherein the larger the angle between the inclined interface and the plane of the temperature control plate 21, the larger the heat transfer area, but as the angle increases, the pressure of the seventh page/12 pages of the heating device 23 on the inclined interface decreases. The thermal conductivity will also drop under the 10022244^ single number A0101 1013084626-0 M434302, so the angle between the heat conduction interface and the temperature control plate plane is greater than 5 degrees and less than 70 degrees, which can achieve better results. Good thermal conductivity. The heat conducting interface may also be partially formed into a trapezoidal cross section with the plane parallel portion of the temperature control plate and the plane of the temperature control plate. Such a shape design is still greater than the thermal conductivity of a conventional square section heating device. The same principle of creation can also be applied to the heat-dissipating mechanism. For example, the heater 230 in the heating device shown in FIG. 2 is replaced with a heat sink, and the connection structure of the present invention can also be applied when the heat is led out to the temperature control plate. Heat transfer efficiency, simplifying installation. The heat sink can be a metal pipe with coolant inside, which is connected to an external heat sink to achieve efficient heat dissipation from the temperature control plate. Although the content of the present invention has been described in detail by the above-described preferred embodiments, it should be understood that the above description should not be construed as limiting the present invention. Various modifications and substitutions of the present invention will be apparent to those skilled in the art after reading this. Accordingly, the scope of the invention should be limited by the appended claims. BRIEF DESCRIPTION OF THE DRAWINGS [0005] Fig. 1 is a schematic view showing the construction of a heating device for a plasma processor. Fig. 2 is an enlarged view showing the details of a heating device for a plasma processor. [Main component symbol description] [0006] 10 mounting wafer pedestal 11 electrostatic chuck 12 wafer 臓 244 production order number A 〇 101 page 8 / total 12 pages 1013084626-0 M434302 20 gas shower head 21 control Warm plate 23 heating device 41 reaction gas source 43 gas pipe 100 reaction chamber wall 101 airtight member 106 air extracting device 230 heater 231 heat conducting block 232 heat conducting block closing piece
觀2244严編號A0101 第9頁/共12頁 1013084626-0View 2244 Yan No. A0101 Page 9 / Total 12 Page 1013084626-0