• M324231 八、新型說明： 【新型所屬之技術領域】 本創作係係有關-種具有熱均句性之熱處理裝置 指有關-種半導體it件之製程之熱處理裝置，#由控㈣ 氣流動來控制溫度的均勻化。 …、 【先前技術】 在半導體製程中，光刻技術係應用於將各種型式之薄 膜予以刻以圖案，其中各種型式之薄膜包括例如形成於半 •導體基板上之二氧化石夕膜或氮化石夕膜之絕緣膜，與例如銘 合金膜或銅合金膜之導電膜。 . 傳統上，在光刻技術中，對紫外線輻射有感光性之光 •阻i係被塗佈至一薄膜以形成一光阻膜，然後，紫外線輻 __射係經由一光罩圖案而照射（曝光）至光阻膜；接著光阻膜顯 影，且溶解的區域係被一溶劑移除，以形成一光阻圖案； •然後，藉由使用光阻圖案作為光罩，而對薄膜作選擇性地 姓刻出圖案。 隨著積體電路集積度的增加，需要更細微的光刻技 術，例如一種化學增強型光阻已被揭露，其能應用於更細 微處理之光刻技術。化學增強型光阻係一種應用酸催化反 應之光阻，其被塗佈至一個半導體基板，且受遠紫外線照 射’然後其内的光學酸產生劑產生氳離子，以作為化學增 強之觸發物質。在執行於曝光後之曝光後烘烤（PEB)處理期 間’氫離子替代原本連接至鹼基樹脂之保護基，俾能使保 護基解除，不可溶於鹼之光阻係因此改變成可溶解於鹼。 此種反應被稱為一種酸催化感光反應，此種酸催化感光反 5 .M324231 .應增強光阻之可溶解選擇性，俾能實現高度感光特徵。因 此，在曝光之後，如果此種光阻係以一種鹼顯影液進行顯 影’則可獲得一種期望細微光阻圖案。 「第1圖」係為以工序步驟之順序顯示一種使用上述 化學增強型光阻以形成一光阻圖案之流程圖。如步驟A所 示，將有待形成一光阻圖案之半導體基板之表面，進行一 種疏水處理，俾能增加光阻之黏著性。如步驟B所示，將 化學增強型光阻旋轉塗佈至半導體基板之表面，藉以形成 _ 一光阻膜。接著如步驟C所示，光阻膜係被預先烘烤以從 該處移除溶劑。半導體基板係被冷卻至室溫，如步驟D所 不。而光阻膜係經由一種以期望圖案畫出之光罩圖案，以 、來自如KrF準分子雷射之遠紫外線輻射照射曝露，如步驟 、-E所示。光阻膜接著受到一種pEB(曝光後烘烤）處理，以促 進從光阻膜消除保護基之消去反應（酸催化感光反應），如 步驟F所示。 _ 然後，半導體基板再次冷卻至室溫，如「第丨圖」之 步驟G所示。而光阻膜係以鹼顯影液顯影以形成一光阻圖 案，如步驟Η所示。形成光阻圖案之光阻膜係受到後烘烤， 以移除由顯影所產生之水汽，如步驟j所示。接著，於半 導體基板上之薄膜，係藉由使用上述光阻圖案作為光罩以 對薄膜刻以圖案，而選擇性地被蝕刻。 、化學增強型光阻具有解像性優異之優點，但另一方面 卻對環境敏感。亦即與大氣中的鹼性物質反應，酸失效， ^之圖案形狀或解像度劣化等問題。為了防止此劣化而進 仃環境控制。一般而言，環境控制係於曝光裝置及進行光 6 M324231 =佈：顯=處理之塗佈顯影機内，設置化學滤網等而 而：處Γ序，PEB係為了使曝光工序中所發生的酸擴： 。所以’化學增強型光阻除了前述酸之失活外， 還口為ΡΕΒ處理中之酸的蒸發而消失。 ΡΕΒ =即提出數種方法作為減低化學增強型光阻因 阻2 酸㈣發㈣失的方法。❹··可舉例使光 吏：Γ劑揮發為目的所進行之預烤溫度比通常 可兴例Γ ^常㈣，以減低㈣蒸發时法。或者 酸之蒸發的方法。 树㈣處理’以減少 度條件(通常條件)的停件下 1進=，^ I ”⑽件下進仃預烤處理及ΡΕΒ處理，故 1可知在具有之曝光量或對錢度充分發揮成 處理程序時^f拉阻圖f的要求下’使用熱處理裝置行熱 制，® & θ'別'主思半導體晶圓上被處理膜的溫度控 i成=溫度變化會對半導體晶圓表面被處理膜的控制性 故成問題，及抑制其表面的變化。 生源之埶處理H二 成為巧染粒子（Particle)之發 内幵，点二^ ，因此，一般係於熱處理裝置的反應室 蒸發物=乳流’用以將加入過程中半導體晶圓表面中的 …载走排出，抑制蒸發物對表面的變化影響。 然而，現有熱處理農置之的進氣排風系統;常因為氣 M324231 體溫度低而使蒸發物在氣體排放口遇冷凝 至變成固態，使得氣體排放口大小改變，甚 程序時淨化㈣wx，該=== Γ段短時間就必須停機進行處理室的清潔，且淨 :二也將會使光"表面的溫度不均，進而導= 表面的I辰度不同’使得顯影處理後之妹尺寸產 根據上述，為了避免溫度不均，減少熱處理程序• M324231 VIII. New description: [New technical field] This series is related to the heat treatment device with heat uniformity refers to the heat treatment device of the process of the semiconductor device, #控控(四)气流控制Homogenization of temperature. ..., [Prior Art] In the semiconductor process, lithography is applied to pattern various types of films, including various types of films including, for example, a dioxide film or a nitride formed on a semi-conductor substrate. An insulating film of a cerium film, and a conductive film such as an alloy film or a copper alloy film. Traditionally, in lithography, a light that is sensitive to ultraviolet radiation is applied to a film to form a photoresist film, and then the ultraviolet radiation is irradiated through a mask pattern. (exposure) to the photoresist film; then the photoresist film is developed, and the dissolved region is removed by a solvent to form a photoresist pattern; • Then, the film is selected by using the photoresist pattern as a mask Sexually surnamed patterns. As the degree of integration of integrated circuits increases, more subtle lithography techniques are needed. For example, a chemically enhanced photoresist has been disclosed which can be applied to more fine-grained lithography. A chemically enhanced photoresist is a photoresist that is subjected to an acid catalyzed reaction, which is applied to a semiconductor substrate and is irradiated by far ultraviolet rays, and then the optical acid generator therein generates erbium ions as a trigger for chemical enhancement. During the post-exposure post-exposure bake (PEB) process, the hydrogen ion replaces the protecting group originally attached to the base resin, the hydrazine can release the protecting group, and the insoluble alkali resistive system is thus changed to be soluble. Alkali. This reaction is called an acid-catalyzed photoreaction, and this acid-catalyzed photoreaction is enhanced by the solubility selectivity of the photoresist. Therefore, after exposure, if such a photoresist is developed by an alkali developer, a desired fine photoresist pattern can be obtained. "Fig. 1" is a flow chart showing the use of the above chemically enhanced photoresist to form a photoresist pattern in the order of process steps. As shown in step A, the surface of the semiconductor substrate on which a photoresist pattern is to be formed is subjected to a hydrophobic treatment to increase the adhesion of the photoresist. As shown in step B, a chemically-enhanced photoresist is spin-coated onto the surface of the semiconductor substrate to form a photoresist film. Next, as shown in step C, the photoresist film is prebaked to remove the solvent therefrom. The semiconductor substrate is cooled to room temperature as in step D. The photoresist film is exposed to light from a far-rading ultraviolet radiation such as a KrF excimer laser via a reticle pattern drawn in a desired pattern, as shown in steps -E. The photoresist film is then subjected to a pEB (post exposure bake) treatment to promote elimination of the protective group from the photoresist film (acid-catalyzed photoreaction) as shown in step F. Then, the semiconductor substrate is cooled again to room temperature as shown in step G of the "Fig. The photoresist film is developed with an alkali developer to form a photoresist pattern as shown in step Η. The photoresist film forming the photoresist pattern is subjected to post-baking to remove moisture generated by development, as shown in step j. Next, the film on the semiconductor substrate is selectively etched by patterning the film by using the above-described photoresist pattern as a mask. Chemically amplified photoresists have the advantage of excellent resolution, but on the other hand are sensitive to the environment. That is, it reacts with an alkaline substance in the atmosphere, and the acid is deactivated, and the pattern shape or resolution is deteriorated. In order to prevent this deterioration, environmental control is carried out. In general, the environmental control is performed in an exposure apparatus and a coating and developing machine that performs light 6 M324231 = cloth: display = processing, and a chemical filter or the like is provided instead of: the PEB is used to make the acid generated in the exposure process. Expansion: Therefore, in addition to the inactivation of the aforementioned acid, the chemically-enhanced photoresist disappears due to evaporation of the acid in the hydrazine treatment. ΡΕΒ = Several methods have been proposed as methods for reducing the chemically-enhanced photoresist resistance (acid) (four) hair (four) loss. ❹··················································································· Or the method of evaporation of acid. The tree (4) handles the 'pre-baking treatment and the sputum treatment under the stop condition of the reduction condition (normal condition), so that it can be fully utilized in the amount of exposure or the amount of money. When processing the program, the requirements of the pull-down diagram f are 'heated using a heat treatment device, ® & θ' don't think about the temperature of the processed film on the semiconductor wafer, the temperature change will be on the surface of the semiconductor wafer. The controllability of the treated film is a problem, and the surface change is suppressed. The raw material treatment H 2 becomes the internal enthalpy of the particle, which is generally evaporated in the reaction chamber of the heat treatment device. The material = milk flow is used to remove the ... in the surface of the semiconductor wafer during the joining process, and to suppress the influence of the evaporation on the surface. However, the existing heat treatment of the agricultural intake air exhaust system; often because of the gas M324231 body temperature The degree is low, so that the evaporant is condensed in the gas discharge port to become solid, so that the size of the gas discharge port changes, even when the program is cleaned (4) wx, the === Γ section must be shut down for a short time to clean the treatment room, and net: two Will also make light & "The temperature of the surface is uneven, and then the thickness of the surface is different", so that the size of the sister after the development process is produced. According to the above, in order to avoid temperature unevenness, the heat treatment procedure is reduced.
0因為温度不均造成半導體晶圓表面被處理膜的控制性問 靖’因此需改良現有的熱處理裝置。 【新型内容】 爰疋本創作之主要目的係揭露一種熱處理裝置，获 .由熱空氣流動使加熱過程均勻化，且調節排氣之流量 .制排出該處理室内之氣體流量，形成一具有熱均句性之ς •處理裝置。藉此降低淨化氣流造成光阻表面溫度不均之情 況，使光阻表面的酸濃度變化相@，使得顯影處理後可獲 Β得一種期望細微光阻圖案。 又 本創作係一種具有熱均勻性之熱處理裝置，同一般熱 處理裝置’其裝置包括一底部及一蓋體，及該底部與蓋體 所夾设形成之一處理室；一加熱平台設置於該處理室，用 以加熱半導體晶圓；一氣體供給口設於該蓋體中央處，且 /氣體t、、、、6 口接入一氣體供給管；以及一位於該底部侧邊 t在該蓋體内之排氣管，且該排氣管延伸至一氣體排放 官，用以排出處理室内之氣體。本創作之特徵在於該加熱 平台轉動該半導體晶圓，使該半導體晶圓上下的熱空氣流 動，使加熱過程均勻化；且該氣體排放管設有一流量控制 8 M324231 裝置，用以調節該氣體排放管内之排放口大小，控制排出 該處理室内之氣體流量；以及一設置於該流量控制裝置前 之流量計，該流量計用於量測該氣體排放管内之排氣流 量，且回授信號給該流量控制裝置，使該流量控制裝置機 動調整該氣體排放管内之排放口大小，藉此降低淨化氣流 造成晶圓上待處理膜表面溫度不均之情況，使光阻表面的 酸濃度變化相同，使·頁影處理後可獲得一種期望細微光 阻圖案。 _ 彡中’該半導體晶圓的轉動方式係藉由該加埶平台自 我旋轉，帶動該半導體晶圓轉動，利用轉動方式形成熱空 _氣流動使加熱過程均勻化；或該加熱平台中央區域設有複 '數個頂氣孔，該些頂氣孔用以喷出氣體頂住該半導體晶 圓，且中央區域外圍設有複數個轉動氣孔，藉由該些轉動 氣孔噴出氣體使該半導體晶圓轉動。 又，該氣體供給管上設有複數個環繞該氣體供給管之 .2熱70件，心加減通於該氣體供給管之氣體，而使氣 體本身溫度升高，該被升溫之氣體再由該氣體供給口進入 到该處理室，再由該排氣管排出。 另肖蓋體外表面係設有一絕熱層，用以減少該蓋體 本身的熱輻射，使該蓋體具有保持溫度之效果。 【實施方式】 ^俾使貴審查㈣對本創作之目的、特徵及功效，得 L致更深-層之瞭解與認同，兹列舉實施例並配合圖式說 听如后： 請參閱「第2圖」，本創作之熱處理震置之剖面示意圖。 9 M324231 m—種具有熱物生之熱處理裝置跡熱處理裝置 ’、；加熱半導體晶圓w(其上已具待處理之化學增強 光阻膜）進行溫度控制，同時施行熱處理之處理裝置。同 Γ般熱處理裝置_，其包括-底部no及-蓋體120,及 /底邛110與盍體120所夾設形成之一處理室汕〇,且該處 理室200内用以放置欲加熱之半導體晶圓W至一預定溫产 之加熱平台m。-氣體供給口 121設於該蓋體12〇中二 處二且該氣體供給口 121接入一氣體供給管140;以及一位 於该底部11〇侧邊且在該蓋體内之排氣管15〇，且該排氣管 150延伸至一氣體排放管16〇，用以排出處理室2⑻内之淨 化氣體（如氮氣）。 产該氣體排放管160設有一流量控制裝置161，用以調節 該氣體排放管内160排放口之大小，控制排出該處理室2〇〇 内之氣體流量；以及一設置於該流量控制裝置前之流量計 162 ’該流量計162用於量測該氣體排放管16〇内之排氣流 量，且回授信號給該流量控制裝置161，使該流量控制裝置 161機動調整該氣體排放管16〇内之排放口大小。本創作藉 由可控制與改變之排放口大小，使執行熱處理程序時淨化 氣流流量穩定，形成一具有熱均勻性之熱處理裝置1〇〇，降 低淨化氣流因為不穩定的流速造成在晶圓w上光阻膜表面 所產生溫度不均之情況，使光阻表面的酸濃度變化更穩 定，使得顯影處理後可獲得一種期望細微光阻圖案。 請參閱「第3圖」，為本創作之另一熱處理裝置之剖面 示意圖。該氣體供給管140上進一步可設置複數個環繞於 該氣體供給管140之加熱元件4〇〇,該加熱元件400用以加 M324231 職體供給管刚之淨化氣體_氮氣，而使氣體本 身二度升馬，該被升溫之氣體再由該氣體供給口 ΐ2ι進入 到°亥處理室鳩’再由該排氣管150排出，於該處理室2〇〇 熱氣體對流，利用熱氣體將半導體晶圓W表面中 物载走排出，且也抑制蒸發物對半導體晶圓W表面 =變，響，也控制熱處理裝置，⑻之整個處理室表20面0 .置】。。之元件’如處理室 160之沉積物影塑，所,v外丸名 ”孔體排放官 時間而不須停機;t行相關二、r、=f _可操作一段長 間成本，也減少相關作業::本“’㈣作業程序上的時 -、、、邑…、力月匕’使該蓋體120呈右徂姓、、田 又之效果。該絕熱層300可減少該蓋體1 ”/皿 進一步使影響本創作之熱處理 身的熱輪射’ 素都被排除，降低溫度不均之情況。心皿度不穩定之因 本創作旋轉該半導體晶圓w的方式來 圖」，可以利用旋轉該加埶平A 二 > 閱苐4-1 圓”轉動，使半導雜晶該， 體晶圓W放置於該加熱平台130時，藉由二田5亥半導 上的導引栓131限定半導體晶圓w的位曰置厂且X平台130 台130旋轉自我旋轉時，將帶 J該加熱平 該半導體晶圓W也會因為加敎承a體阳® W轉動，·且 「…」所示)而與加熱平台千二^ 、十口 130間具有間隙，所以利 11 M324231 用轉動方式使半導體晶圓w上下都會形成熱空氣流動 由熱空氣流動使加熱平台區域間溫度差減少』 均勻性最佳化。 …、過私 印參閱「第5-1圖」，本創作也可以利用旋轉烘 導體晶圓W，使半導體晶B w加熱過程均勻化。例如 用該：熱平台130中央區域設置的複數個頂氣孔13 ^生乳塾’使半導體晶圓w與加熱平台13()間保持間隙（如 圖)’再利用中央區域外圍設置的複數個轉動氣孔⑼ 队軋產生推力使半導體晶圓w轉動（如第5_丨圖），該半導 體晶圓W在加熱平台13〇上旋轉減少區域間溫度差了使加 熱過程均勻性最佳化。 以上介紹的僅僅是基於本創作的實施例，並不能以此 =定本創作的範圍。任何對本創作的裝置作本技術領域 ^熟知的部件的替換、組合、分立的等同改變或替換均不 超出本創作的揭露以及保護範圍。 【圖式簡單說明】 第1圖’為以步驟順序顯示一般光阻圖案形成方法之流程 圖。 =2圖，為本創作之熱處理裝置之剖面示意圖。 筮圖為本創作之另一熱處理裝置之剖面示意圖。 t 4圖，為加熱平台自我旋轉之示意圖。 f 4_2圖，為第4-1圖之側視示意圖。 :^圖，為加熱平台喷氣體使半導體晶圓旋轉之示意圖。 弟5-2圖，為第5-1圖之剖面示意圖。 【主要元件符號說明】 12 M324231 . 100 熱處理裝置 110 底部 120 蓋體 121 氣體供給口 130 131 加熱平台 導引栓 132 頂針 133 頂氣孔 134 ⑩140 150 轉動氣孔 氣體供給管 排氣管 160 200 氣體排放管 處理室 161 流罝控制裝置 ,162 流量計 300 絕熱層 400 加熱元件0 The controllability of the treated film on the surface of the semiconductor wafer is caused by temperature unevenness. Therefore, it is necessary to improve the existing heat treatment apparatus. [New content] The main purpose of Sakamoto's creation is to expose a heat treatment device that achieves homogenization of the heating process by hot air flow and regulates the flow rate of the exhaust gas. The gas flow rate discharged from the treatment chamber is formed to form a heat average. Sentences of the sentence • Processing device. Thereby, the temperature of the photoresist surface is unevenly caused by the purifying airflow, and the acid concentration of the photoresist surface is changed to phase @, so that a desired fine photoresist pattern can be obtained after the development process. The present invention is a heat treatment device having thermal uniformity, and the same as the general heat treatment device, the device includes a bottom and a cover, and the bottom and the cover are sandwiched to form a processing chamber; a heating platform is disposed in the treatment a chamber for heating the semiconductor wafer; a gas supply port is disposed at the center of the cover body, and / gas t, , , and 6 ports are connected to a gas supply pipe; and a bottom side of the bottom portion is at the cover body An exhaust pipe inside, and the exhaust pipe extends to a gas discharge officer for discharging the gas in the processing chamber. The present invention is characterized in that the heating platform rotates the semiconductor wafer to flow hot air above and below the semiconductor wafer to homogenize the heating process; and the gas discharge pipe is provided with a flow control 8 M324231 device for regulating the gas discharge a discharge port size in the tube, controlling a gas flow rate discharged into the processing chamber; and a flow meter disposed in front of the flow control device, the flow meter is configured to measure an exhaust gas flow in the gas discharge pipe, and feedback a signal to the a flow control device that causes the flow control device to maneuverly adjust the size of the discharge port in the gas discharge pipe, thereby reducing the uneven temperature of the surface of the film to be treated on the wafer by the purge airflow, and changing the acid concentration of the photoresist surface to be the same • A desired fine photoresist pattern can be obtained after the image processing. _ 彡中' The rotation mode of the semiconductor wafer is self-rotating by the twisting platform to drive the semiconductor wafer to rotate, forming a hot air_gas flow by rotation to homogenize the heating process; or the central portion of the heating platform There are a plurality of top air holes for ejecting gas against the semiconductor wafer, and a plurality of rotating air holes are arranged around the central portion, and the semiconductor wafer is rotated by the rotating holes. Further, the gas supply pipe is provided with a plurality of .70 heats surrounding the gas supply pipe, and the gas is added to the gas supply pipe to increase the temperature of the gas itself, and the heated gas is further The gas supply port enters the processing chamber and is discharged by the exhaust pipe. In addition, the outer surface of the cover is provided with a heat insulating layer for reducing the heat radiation of the cover itself, so that the cover has the effect of maintaining temperature. [Embodiment] ^ 俾 贵 审查 审查 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四The schematic diagram of the heat treatment shock of this creation. 9 M324231 m—a heat treatment device for a heat treatment device with a thermal substance ’, a heating semiconductor wafer w (a chemically reinforced photoresist film to be processed thereon) for temperature control, and a heat treatment device. The same heat treatment device _, including - bottom no and - cover 120, and / bottom 邛 110 and the body 120 are formed to form a processing chamber 汕〇, and the processing chamber 200 is used to place the heating The semiconductor wafer W is heated to a predetermined temperature. - a gas supply port 121 is provided at two places in the cover body 12 and the gas supply port 121 is connected to a gas supply pipe 140; and an exhaust pipe 15 located at the side of the bottom portion 11 and inside the cover body 〇, and the exhaust pipe 150 extends to a gas discharge pipe 16〇 for discharging a purge gas (such as nitrogen) in the process chamber 2 (8). The gas discharge pipe 160 is provided with a flow control device 161 for adjusting the size of the discharge port of the gas discharge pipe 160, controlling the flow rate of the gas discharged from the process chamber 2; and a flow rate disposed before the flow control device The flow meter 162 is configured to measure the exhaust gas flow rate in the gas discharge pipe 16〇, and feed back a signal to the flow control device 161, so that the flow control device 161 maneuverably adjusts the gas discharge pipe 16〇 The size of the discharge port. The present invention stabilizes the flow rate of the purified gas stream during the heat treatment process by controlling and changing the size of the discharge port to form a heat treatment device having thermal uniformity, reducing the purge gas flow due to the unstable flow rate on the wafer w. The temperature unevenness generated on the surface of the photoresist film makes the acid concentration change of the photoresist surface more stable, so that a desired fine photoresist pattern can be obtained after the development process. Please refer to Figure 3 for a cross-sectional view of another heat treatment unit. The gas supply pipe 140 can further be provided with a plurality of heating elements 4〇〇 surrounding the gas supply pipe 140. The heating element 400 is used to add the purge gas _nitrogen of the M324231 service body supply pipe, and the gas itself is twice. When the horse is warmed up, the heated gas is further discharged from the gas supply port 2 into the processing chamber, and then discharged from the exhaust pipe 150. In the processing chamber 2, hot gas is convected, and the semiconductor wafer is heated by the hot gas. The surface of the W surface is discharged, and the evaporation of the surface of the semiconductor wafer W is also suppressed, and the heat treatment device is also controlled, and the entire processing chamber of the (8) surface is 0. . The components 'such as the deposition of the processing chamber 160 shadow, the v, the name of the pill" hole discharge official time without stopping; t line related two, r, = f _ can operate a long-term cost, also reduce related operations :: The "(4) operating procedures on the time -,,, 邑 ..., 匕月匕" make the cover 120 the right 徂 surname, and the effect of the field. The heat insulating layer 300 can reduce the heat of the cover body 1"/dish further, and further reduce the temperature unevenness of the heat-treated body which affects the creation, and reduce the temperature unevenness. The way of the wafer w is as shown in FIG. 2, which can be rotated by the rotation of the A 二 二 , , , , , , , , , 苐 苐 苐 苐 苐 苐 苐 苐 苐 苐 苐 苐 苐 苐 苐 苐 苐 苐 苐 苐 苐 苐 苐 苐 苐 苐When the guiding pin 131 on the second half of the 5th half of the semiconductor defines the semiconductor wafer w and the X platform 130 rotates and rotates itself, the heating of the semiconductor wafer W is also caused by the heating. a body Yang® W rotates, and “...” has a gap with the heating platform, and the ten ports 130, so the 11 M324231 turns the semiconductor wafer w up and down to form hot air flow by heat. The air flow reduces the temperature difference between the heating platform zones. The uniformity is optimized. ..., for the private printing, refer to "Picture 5-1". This creation can also use the rotating baking conductor wafer W to homogenize the semiconductor crystal B w heating process. For example, the plurality of top air holes 13 disposed in the central region of the heat platform 130 are used to maintain a gap between the semiconductor wafer w and the heating platform 13 (see FIG.) 'reuse the plurality of rotating air holes provided at the periphery of the central portion. (9) The team roll generates a thrust to rotate the semiconductor wafer w (as shown in FIG. 5), and the semiconductor wafer W rotates on the heating stage 13〇 to reduce the temperature difference between the regions to optimize the uniformity of the heating process. The above description is only based on the embodiment of the present creation, and cannot be used as the scope of the original creation. Any substitutions, combinations, discrete equivalent changes or substitutions of the components of the present invention which are well known in the art are not beyond the scope of the present disclosure. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a flow chart showing a method of forming a general photoresist pattern in the order of steps. Fig. 2 is a schematic cross-sectional view of the heat treatment device of the present invention. A cross-sectional view of another heat treatment device of the present invention. The t 4 diagram is a schematic diagram of the self-rotation of the heating platform. The f 4_2 diagram is a side view of Figure 4-1. : ^, a schematic diagram of a gas spray on a heating platform to rotate a semiconductor wafer. Figure 5-2 is a schematic cross-sectional view of Figure 5-1. [Main component symbol description] 12 M324231 . 100 Heat treatment device 110 Bottom 120 Cover 121 Gas supply port 130 131 Heating platform guide pin 132 Thimble 133 Top air hole 134 10140 150 Rotating air supply gas supply pipe Exhaust pipe 160 200 Gas discharge pipe treatment Room 161 flow control device, 162 flow meter 300 insulation layer 400 heating element