TW201626117A - Board processing method, program, compute storage medium, and board processing system - Google Patents
Board processing method, program, compute storage medium, and board processing system Download PDFInfo
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/38—Treatment before imagewise removal, e.g. prebaking
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
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Abstract
Description
本發明，係關於處理形成有光阻膜之基板的基板處理方法、程式、電腦記憶媒體及基板處理系統。 The present invention relates to a substrate processing method, a program, a computer memory medium, and a substrate processing system for processing a substrate on which a photoresist film is formed.
在例如半導體元件之製造中的光微影工程，係依序進行例如：在半導體晶圓(以下稱為「晶圓」。)表面的被處理膜上塗佈光阻液，以形成光阻膜的光阻塗佈處理、對該光阻膜而使預定圖案進行曝光的曝光處理、在曝光後促進光阻膜內之化學反應的加熱處理(後曝光烘烤(post exposure baking))、對已曝光之光阻膜進行顯像的顯像處理等，而在晶圓上形成預定的光阻圖案。 For example, in the photolithography process in the manufacture of a semiconductor device, a photoresist is applied to a film to be processed on a surface of a semiconductor wafer (hereinafter referred to as "wafer") to form a photoresist film. The photoresist coating treatment, the exposure treatment for exposing the predetermined pattern to the photoresist film, and the heat treatment (post exposure baking) for promoting the chemical reaction in the photoresist film after exposure, The exposed photoresist film is subjected to development processing of development or the like, and a predetermined photoresist pattern is formed on the wafer.
然而，近年來，為了謀求半導體元件更進一步高積體化，而要求上述之被處理膜的圖案微細化。因此，光阻圖案之微細化獲得進展，使用例如包含有光酸產生劑之光阻劑(化學增幅型光阻)來作為對應於該微細化的光阻劑。(專利文獻1)。 However, in recent years, in order to further increase the integration of semiconductor elements, it is required to refine the pattern of the above-mentioned film to be processed. Therefore, the miniaturization of the photoresist pattern is progressing, and a photoresist (chemically amplified photoresist) containing, for example, a photoacid generator is used as the photoresist corresponding to the miniaturization. (Patent Document 1).
〔專利文獻1〕日本特開2012-165000號公報 [Patent Document 1] Japanese Patent Laid-Open Publication No. 2012-165000
如上述之化學增幅型光阻，係在藉由曝光處理所曝光的部位，光酸產生劑會進行光分解而產生酸。而且，以在曝光後進行後曝光烘烤(以下，稱為「PEB處理」)的方式，藉由在曝光部產生的酸，而發生光阻劑之去保護反應。 The chemically amplified photoresist as described above is a portion which is exposed by exposure treatment, and the photoacid generator undergoes photodecomposition to generate an acid. Further, the post-exposure baking (hereinafter referred to as "PEB treatment") after the exposure is performed to cause a deprotection reaction of the photoresist by the acid generated in the exposed portion.
然而，在曝光部產生的酸，係不僅藉由PEB處理而引起去保護反應，且藉由熱能而擴散至未曝光部。當酸擴散至未曝光部時，則在顯像處理之際，有因該擴散之酸的影響，未曝光部未被完全去除，且顯像後所形成之光阻圖案的線寬無法成為所期望的尺寸之虞。特別是，在光阻圖案之微細化獲得進展的近年來，不可忽視該未曝光部之酸所致之尺寸變化。 However, the acid generated in the exposed portion is not only caused by the PEB treatment to cause a deprotection reaction, but also diffused to the unexposed portion by thermal energy. When the acid diffuses to the unexposed portion, the unexposed portion is not completely removed due to the influence of the diffused acid during the development process, and the line width of the photoresist pattern formed after the development cannot be obtained. The size of the desired size. In particular, in recent years in which the miniaturization of the photoresist pattern has progressed, the dimensional change due to the acid of the unexposed portion cannot be ignored.
又，在後曝光烘烤後且顯像處理之前，晶圓因某些理由而曝露於加熱環境時，亦有進一步進行未曝光部之酸的擴散，從而更進一步導致圖案尺寸惡化之虞。 Further, after the post-exposure baking and before the development process, when the wafer is exposed to the heating environment for some reason, the acid of the unexposed portion is further diffused, which further deteriorates the pattern size.
本發明，係有鑑於該點進行研究者，且以下述為目的：在顯像處理之前，以使光阻劑中之酸失活的方式，適切地進行顯像處理，而以所期望的尺寸來形成光阻圖案。 The present invention has been made in view of the above, and it is intended for the purpose of performing development processing in a desired size in such a manner that the acid in the photoresist is deactivated before the development process. To form a photoresist pattern.
為了達成前述目的，本發明，係一種處理基板的基板處理方法，其特徵係，具有：光阻膜形成工程，在基板上形成光阻膜；曝光工程，對基板上的光阻膜進行圖案之曝光；PEB處理工程，對前述曝光工程後的基板進行加熱，藉由前述光阻膜中的酸使該光阻膜去保護；酸失活工程，對前述PEB處理工程後之基板上的光阻膜供給鹼性之氣體或鹼溶液之噴霧的至少一者，使前述光阻膜的酸失活；及顯像處理工程，在前述酸失活工程後，對基板供給顯像液，而進行前述光阻膜之顯像處理。 In order to achieve the above object, the present invention provides a substrate processing method for processing a substrate, characterized in that: a photoresist film forming process is performed to form a photoresist film on the substrate; and an exposure process is performed to pattern the photoresist film on the substrate. Exposure; PEB processing, heating the substrate after the exposure process, deprotecting the photoresist film by the acid in the photoresist film; acid deactivation engineering, photoresist on the substrate after the PEB processing project At least one of the film supplying the alkaline gas or the spray of the alkali solution deactivates the acid of the photoresist film; and the development process, after the acid deactivation process, supplying the developer to the substrate, and performing the aforementioned Imaging processing of the photoresist film.
根據本發明，由於是藉由在PEB處理工程後且顯像處理工程之前所進行的酸失活工程，來使光阻膜中的酸失活，因此，在顯像處理之際，不會存在酸(該酸，係光阻圖案之線寬的變動因素)。因此，可不受酸的影響而進行顯像處理，且藉由此來形成所期望之尺寸的光阻圖案。又，即使在酸失活後且顯像處理之前，晶圓被曝露於加熱環境中，由於酸已不存在於光阻劑，因此，亦不會產生因進行酸之擴散而導致圖案尺寸的惡化。 According to the present invention, since the acid in the photoresist film is deactivated by the acid deactivation process performed after the PEB treatment process and before the development process, the image processing does not exist. Acid (the acid, a factor of variation in the line width of the photoresist pattern). Therefore, development processing can be performed without being affected by an acid, and thereby a photoresist pattern of a desired size can be formed. Moreover, even after the acid is deactivated and before the development process, the wafer is exposed to the heating environment, since the acid is not present in the photoresist, the pattern size is not deteriorated due to the diffusion of the acid. .
亦可在前述酸失活工程後且前述顯像處理之前，更具有：改質處理工程，對前述光阻膜進行改質處理。 After the acid deactivation process and before the development process, the modification process may be further performed to modify the photoresist film.
在前述改質處理中，係亦可使前述光阻膜與含矽之化合物反應，而將該光阻膜矽烷化。 In the above modification treatment, the photoresist film may be reacted with a compound containing ruthenium to decinate the photoresist film.
亦可在前述PEB處理工程後且前述酸失活工程之前，更具有：紫外線照射工程，對前述PEB處理工程後的光阻膜照射波長193nm或波長248nm的紫外線，而使該光阻膜中的光酸產生劑失活。 After the PEB treatment process and before the acid deactivation process, the ultraviolet light irradiation process may be performed on the photoresist film after the PEB treatment process, and the ultraviolet light having a wavelength of 193 nm or a wavelength of 248 nm is irradiated to the photoresist film. The photoacid generator is inactivated.
前述光阻膜，係亦可為EUV光阻之膜。 The photoresist film may also be a film of EUV photoresist.
根據另一個觀點之本發明，提供一種程式，其係在控制該基板處理裝置之控制部的電腦上動作，以使得藉由基板處理裝置執行前述基板處理方法。 According to another aspect of the invention, there is provided a program for operating on a computer that controls a control unit of the substrate processing apparatus such that the substrate processing method is performed by the substrate processing apparatus.
又，根據另一觀點之本發明，提供一種儲存有前述程式之可讀取之電腦記憶媒體。 Further, according to another aspect of the present invention, a readable computer memory medium storing the aforementioned program is provided.
而且，另一觀點之本發明，係一種處理基板之基板處理系統，其特徵係，具有：光阻塗佈裝置，在基板上塗佈光阻膜；PEB處理裝置，對藉由曝光裝置(該曝光裝置，係設置於前述基板處理系統的外部)所進行曝光的基板進行加熱，且藉由前述光阻膜中的酸，使該光阻膜去保護；酸失活處理裝置，對前述光阻膜供給鹼性之氣體或鹼溶液之噴霧的至少一者，使光阻膜中的酸失活；及顯像處理裝置，在基板上供給顯像液，而進行前述光阻膜之顯像處理。 Moreover, another aspect of the present invention is a substrate processing system for processing a substrate, comprising: a photoresist coating device for applying a photoresist film on the substrate; and a PEB processing device for the exposure device The exposure device is configured to heat the substrate exposed to the outside of the substrate processing system, and the photoresist film is deprotected by the acid in the photoresist film; the acid deactivation processing device, the photoresist At least one of the film supplying the alkaline gas or the spray of the alkali solution deactivates the acid in the photoresist film; and the development processing device supplies the developing solution on the substrate to perform the development process of the photoresist film .
根據本發明，可在顯像處理之前，以使光阻劑中之酸失活的方式，適切地進行顯像處理，而以所期望的尺寸來形成光阻圖案。 According to the present invention, the development process can be appropriately performed in such a manner that the acid in the photoresist is deactivated before the development process, and the photoresist pattern is formed in a desired size.
1‧‧‧基板處理系統 1‧‧‧Substrate processing system
30‧‧‧顯像處理裝置 30‧‧‧Development processing device
31‧‧‧下部反射防止膜形成裝置 31‧‧‧Bottom reflection preventing film forming device
32‧‧‧光阻塗佈裝置 32‧‧‧Photoresist coating device
33‧‧‧上部反射防止膜形成裝置 33‧‧‧Upper reflection preventing film forming device
40‧‧‧熱處理裝置 40‧‧‧ Heat treatment unit
41‧‧‧疏水化處理裝置 41‧‧‧Hydrochemical treatment unit
42‧‧‧周邊曝光裝置 42‧‧‧ Peripheral exposure device
43‧‧‧紫外線照射裝置 43‧‧‧UV irradiation device
44‧‧‧酸失活處理裝置 44‧‧‧ Acid deactivation treatment device
45‧‧‧改質處理裝置 45‧‧‧Modification processing device
300‧‧‧光阻膜 300‧‧‧Photoresist film
301‧‧‧曝光部 301‧‧‧Exposure Department
302‧‧‧酸 302‧‧‧ Acid
303‧‧‧未曝光部 303‧‧‧Unexposed Department
310‧‧‧光阻圖案 310‧‧‧resist pattern
320‧‧‧光阻圖案 320‧‧‧resist pattern
W‧‧‧晶圓 W‧‧‧ wafer
〔圖1〕表示本實施形態之基板處理系統之構成之概略的平面圖。 Fig. 1 is a plan view showing the outline of a configuration of a substrate processing system of the present embodiment.
〔圖2〕表示本實施形態之基板處理系統之構成之概略的側視圖。 Fig. 2 is a side view showing the outline of the configuration of the substrate processing system of the embodiment.
〔圖3〕表示本實施形態之基板處理系統之構成之概略的側視圖。 Fig. 3 is a side view showing the outline of the configuration of the substrate processing system of the embodiment.
〔圖4〕表示酸失活處理裝置之構成之概略的縱剖面圖。 Fig. 4 is a schematic longitudinal cross-sectional view showing the configuration of an acid deactivation processing apparatus.
〔圖5〕說明晶圓處理之主要工程的流程圖。 [Fig. 5] A flow chart illustrating the main process of wafer processing.
〔圖6〕表示在光阻膜之曝光部產生酸之狀態之縱剖面的說明圖。 Fig. 6 is an explanatory view showing a longitudinal section of a state in which an acid is generated in an exposed portion of a photoresist film.
〔圖7〕表示藉由熱處理，光阻膜之曝光部的酸擴散至未曝光部後之狀態之縱剖面的說明圖。 Fig. 7 is an explanatory view showing a longitudinal section of a state in which an acid in an exposed portion of a resist film is diffused to an unexposed portion by heat treatment.
〔圖8〕表示在晶圓上形成光阻圖案之狀態之縱剖面的說明圖。 FIG. 8 is an explanatory view showing a longitudinal section of a state in which a photoresist pattern is formed on a wafer.
〔圖9〕表示光阻膜之曝光部因矽烷化而膨脹之狀態之縱剖面的說明圖。 FIG. 9 is an explanatory view showing a longitudinal section of a state in which an exposed portion of a photoresist film is expanded by decaneization.
〔圖10〕表示在矽烷化後之光阻膜進行正型顯像而所形成之光阻圖案之狀態之縱剖面的說明圖。 FIG. 10 is an explanatory view showing a longitudinal section of a state in which a resist pattern formed by positive development of a photoresist film after decane is formed.
〔圖11〕表示其他實施形態之基板處理系統之構成之概略的側視圖。 Fig. 11 is a side view showing the outline of a configuration of a substrate processing system according to another embodiment.
以下，說明本發明之實施形態。圖1，係表示實施本實施形態之基板處理方法之基板處理系統1之構成之概略的說明圖。圖2及圖3，係表示基板處理系統1之內部構成之概略的側視圖。另外，在本實施形態中，係以下述情形作為一例而進行說明：基板處理系統1，係對晶圓W進行光微影處理的塗佈顯像處理系統，藉由在PEB處理後且顯像處理之前對晶圓W進行改質處理的方式，使晶圓W曝露於加熱環境。 Hereinafter, embodiments of the present invention will be described. Fig. 1 is an explanatory view showing a schematic configuration of a substrate processing system 1 for carrying out a substrate processing method according to the present embodiment. 2 and 3 are schematic side views showing the internal structure of the substrate processing system 1. In the present embodiment, the substrate processing system 1 is a coating development processing system that performs photolithography on the wafer W by the PEB processing and imaging. The wafer W is subjected to a modification process before the treatment, and the wafer W is exposed to a heating environment.
基板處理系統1，係如圖1所示，具有將下述者一體化連接之構成：卡匣站10，將收容有複數片晶圓W的匣盒C搬入搬出；處理站11，具備有對晶圓W施予預定處理的複數個各種處理裝置；及介面站13，在與鄰接於處理站11的曝光裝置12之間，進行晶圓W之收授。 As shown in FIG. 1, the substrate processing system 1 has a configuration in which the following is integrally connected: the cassette station 10 carries the cassette C in which the plurality of wafers W are accommodated, and the processing station 11 is provided with a pair. The wafer W is subjected to a plurality of various processing devices for predetermined processing; and the interface station 13 performs the wafer W with the exposure device 12 adjacent to the processing station 11.
在卡匣站10，係設置有匣盒載置台20。在匣盒載置台20，係設置有複數個匣盒載置板21(該匣盒載置板，係在對基板處理系統1之外部搬入搬出匣盒C時，載置匣盒C)。 At the cassette station 10, a cassette mounting table 20 is provided. In the cassette mounting table 20, a plurality of cassette mounting plates 21 are provided (the cassette mounting plate is placed on the cassette C when the cassette C is loaded and unloaded outside the substrate processing system 1).
在卡匣站10，係如圖1所示，設置有晶圓搬送裝置23(該晶圓搬送裝置，係在延伸於X方向的搬送路徑22上移動自如)。晶圓搬送裝置23，係亦可在上下方向及垂直軸周圍(θ方向)移動自如，且可在各匣盒載 置板21上的匣盒C與後述之處理站11之第3區塊G3的收授裝置之間搬送晶圓W。 As shown in FIG. 1, the cassette station 10 is provided with a wafer transfer device 23 (the wafer transfer device is movable freely on the transfer path 22 extending in the X direction). The wafer transfer device 23 can also be moved freely in the vertical direction and around the vertical axis (theta direction), and can be carried in each cassette. The wafer W is transferred between the cassette C on the plate 21 and the receiving device of the third block G3 of the processing station 11 to be described later.
在處理站11，係設置有具備各種裝置之複數個例如4個區塊G1、G2、G3、G4。例如在處理站11之正面側(圖1之X方向負方向側)，係設置有第1區塊G1，在處理站11之背面側(圖1之X方向正方向側)，係設置有第2區塊G2。又，在處理站11的卡匣站10側(圖1之Y方向負方向側)，係設置有第3區塊G3，在處理站11之介面站13側(圖1之Y方向正方向側)，係設置有第4區塊G4。 In the processing station 11, a plurality of, for example, four blocks G1, G2, G3, and G4 including various devices are provided. For example, the first block G1 is provided on the front side of the processing station 11 (the negative side in the X direction of FIG. 1), and the first block G1 is provided on the back side of the processing station 11 (the positive side in the X direction of FIG. 1). Block 2 G2. Further, on the side of the cassette station 10 of the processing station 11 (the negative side in the Y direction of Fig. 1), the third block G3 is provided on the side of the interface station 13 of the processing station 11 (the Y direction is the positive side of Fig. 1). ), the fourth block G4 is provided.
例如在第1區塊G1，係如圖2所示，從下依序配置有複數個液處理裝置，例如：顯像處理裝置30，對晶圓W進行顯像處理；下部反射防止膜形成裝置31，在晶圓W之光阻膜的下層形成反射防止膜(以下，稱為「下部反射防止膜」)；光阻塗佈裝置32，在晶圓W上塗佈光阻液，而形成光阻膜；及上部反射防止膜形成裝置33，在晶圓W之光阻膜的上層形成反射防止膜(以下，稱為「上部反射防止膜」)。 For example, in the first block G1, as shown in FIG. 2, a plurality of liquid processing apparatuses, for example, the development processing device 30, are used to perform development processing on the wafer W, and the lower reflection preventing film forming apparatus is disposed. 31. An anti-reflection film (hereinafter referred to as a "lower anti-reflection film") is formed under the photoresist film of the wafer W. The photoresist coating device 32 applies a photoresist to the wafer W to form light. The resist film and the upper anti-reflection film forming device 33 form an anti-reflection film (hereinafter referred to as an "upper reflection preventing film") on the upper layer of the photoresist film of the wafer W.
第1區塊G1之顯像處理裝置30、下部反射防止膜形成裝置31、光阻塗佈裝置32、上部反射防止膜形成裝置33，係於水平方向上具有複數個在處理時收容晶圓W的罩杯F，可將複數個晶圓W並行處理。在該些液處理裝置中，係進行旋轉塗佈(該旋轉塗佈，係在罩杯F內，對晶圓W上塗佈預定的塗佈液)。在旋轉塗佈中， 係例如從塗佈噴嘴對晶圓W上吐出塗佈液，並且使晶圓W旋轉而使塗佈液擴散至晶圓W的表面。 The development processing device 30, the lower reflection preventing film forming device 31, the photoresist coating device 32, and the upper anti-reflection film forming device 33 of the first block G1 have a plurality of wafers W in the horizontal direction during processing. The cup F can process a plurality of wafers W in parallel. In these liquid processing apparatuses, spin coating is applied (this spin coating is applied to the cup F to apply a predetermined coating liquid onto the wafer W). In spin coating, For example, the coating liquid is discharged onto the wafer W from the coating nozzle, and the wafer W is rotated to spread the coating liquid onto the surface of the wafer W.
在第2區塊G2，係如圖3所示，在上下方向與水平方向排列設置有：熱處理裝置40，進行晶圓W之加熱處理或冷卻處理；疏水化處理裝置41，對晶圓W供給HMDS氣體而進行疏水化處理；周邊曝光裝置42，對晶圓W之外周部進行曝光；紫外線照射裝置43，對晶圓W照射紫外線；酸失活處理裝置44，對晶圓W供給鹼性之氣體或鹼溶液之噴霧的至少一者，使光阻膜中的酸失活；及改質處理裝置45，對光阻膜進行改質處理。另外，各裝置40~45的個數或配置，係可任意選擇。另外，關於酸失活處理裝置44之構成，係如後述。又，在本實施形態中，係以在改質處理裝置45所進行之改質處理為光阻膜之矽烷化的情形為例，而進行說明。 In the second block G2, as shown in FIG. 3, a heat treatment device 40 is arranged in the vertical direction and the horizontal direction to heat or cool the wafer W, and the hydrophobization processing device 41 supplies the wafer W. The HMDS gas is hydrophobized; the peripheral exposure device 42 exposes the outer peripheral portion of the wafer W; the ultraviolet irradiation device 43 irradiates the wafer W with ultraviolet rays; and the acid deactivation processing device 44 supplies the wafer W with alkaline At least one of the spray of the gas or the alkali solution deactivates the acid in the photoresist film; and the reforming treatment device 45 performs a modification treatment on the photoresist film. Further, the number or arrangement of the devices 40 to 45 can be arbitrarily selected. The configuration of the acid deactivation processing device 44 will be described later. Further, in the present embodiment, the case where the reforming process performed by the reforming processing device 45 is a crystallization of the photoresist film will be described as an example.
例如在第3區塊G3，係從下依序設置有複數個收授裝置50、51、52、53、54、55、56。又，在第4區塊G4，係從下依序設置有複數個收授裝置60、61、62。 For example, in the third block G3, a plurality of receiving devices 50, 51, 52, 53, 54, 55, 56 are sequentially disposed from below. Further, in the fourth block G4, a plurality of receiving devices 60, 61, and 62 are provided in order from the bottom.
如圖1所示，在第1區塊G1~第4區塊G4所包圍的區域，係形成有晶圓搬送區域D。在晶圓搬送區域D，係配置有複數個晶圓搬送裝置70(該晶圓搬送裝置，係具有在例如Y方向、X方向、θ方向及上下方向移動自如的搬送臂)。晶圓搬送裝置70，係可在晶圓搬送區域D內移動，並將晶圓W搬送至周圍之第1區塊G1、 第2區塊G2、第3區塊G3及第4區塊G4內的預定裝置。 As shown in FIG. 1, the wafer transfer area D is formed in the area surrounded by the first block G1 to the fourth block G4. In the wafer transfer area D, a plurality of wafer transfer apparatuses 70 (having a transfer arm that is movable in, for example, the Y direction, the X direction, the θ direction, and the vertical direction) are disposed. The wafer transfer device 70 is movable in the wafer transfer region D, and transports the wafer W to the surrounding first block G1. A predetermined device in the second block G2, the third block G3, and the fourth block G4.
又，在晶圓搬送區域D，係設置有穿梭搬送裝置80(該穿梭搬送裝置，係在第3區塊G3與第4區塊G4之間直線地搬送晶圓W)。穿梭搬送裝置80，係在例如圖3的Y方向直線地移動自如，且可在第3區塊G3的收授裝置52與第4區塊G4的收授裝置62之間搬送晶圓W。 Further, in the wafer transfer region D, a shuttle transport device 80 is provided (the shuttle transport device linearly transports the wafer W between the third block G3 and the fourth block G4). The shuttle transport device 80 is linearly movable, for example, in the Y direction of FIG. 3, and can transport the wafer W between the receiving device 52 of the third block G3 and the receiving device 62 of the fourth block G4.
如圖1所示，在第3區塊G3之X方向正方向側旁，係設置有晶圓搬送裝置100。晶圓搬送裝置100，係具有例如在X方向、θ方向及上下方向移動自如的搬送臂。晶圓搬送裝置100，係可在支撐晶圓W的狀態下上下移動，並將晶圓W搬送至第3區塊G3內之各收授裝置。 As shown in FIG. 1, the wafer transfer apparatus 100 is provided in the X direction positive side of the 3rd block G3. The wafer transfer device 100 has, for example, a transfer arm that is movable in the X direction, the θ direction, and the vertical direction. The wafer transfer apparatus 100 can move up and down while supporting the wafer W, and transport the wafer W to each of the receiving apparatuses in the third block G3.
在介面站13，係設置有晶圓搬送裝置110與收授裝置111。晶圓搬送裝置110，係具有例如在Y方向、θ方向及上下方向移動自如的搬送臂。晶圓搬送裝置110，係例如可將晶圓W支撐於搬送臂，在第4區塊G4內之各收授裝置、收授裝置111及曝光裝置12之間搬送晶圓W。 The interface station 13 is provided with a wafer transfer device 110 and a transfer device 111. The wafer transfer device 110 has, for example, a transfer arm that is movable in the Y direction, the θ direction, and the vertical direction. The wafer transfer apparatus 110 supports, for example, the wafer W on the transfer arm, and transports the wafer W between each of the transfer apparatuses, the transfer apparatus 111, and the exposure apparatus 12 in the fourth block G4.
接下來，說明上述之酸失活處理裝置44的構成。圖4，係表示酸失活處理裝置44之構成之概略的縱剖面圖。 Next, the configuration of the above-described acid deactivation processing device 44 will be described. FIG. 4 is a schematic longitudinal cross-sectional view showing the configuration of the acid deactivation processing device 44.
酸失活處理裝置44，係具有上部開口而有底之大致呈U字狀的處理容器120與覆蓋處理容器120之開 口的蓋體121。在處理容器120之底面上部，係設置有載置晶圓W的載置台122。在載置台112之內部，係設置有用以加熱晶圓W的加熱器123。 The acid deactivation processing device 44 is a substantially U-shaped processing container 120 having an upper opening and a bottom, and a cover processing container 120. The cover 121 of the mouth. On the upper surface of the bottom surface of the processing container 120, a mounting table 122 on which the wafer W is placed is provided. Inside the mounting table 112, a heater 123 for heating the wafer W is provided.
蓋體121，係具備有水平之頂板130；及側板131，從頂板130之外周緣部延伸於垂直下方而設置。側板131之下端部131a，係與處理容器120之上端部120a相對向。藉此，在處理容器120與蓋體121之間形成處理空間S。 The lid body 121 is provided with a horizontal top plate 130 and a side plate 131 which is provided to extend vertically downward from the outer peripheral edge portion of the top plate 130. The lower end portion 131a of the side plate 131 is opposed to the upper end portion 120a of the processing container 120. Thereby, the processing space S is formed between the processing container 120 and the lid 121.
蓋體121，係具備有：升降機構124，使該蓋體121相對於處理容器120進行升降動作。另外，升降機構124，係只要可使蓋體121與處理容器120彼此相對而升降自如地移動，則亦可設置於處理容器120側。又，藉由升降機構124，以在側板131的下端部131a與處理容器120的上端部120a之間形成預定間隙G的方式，加以調整蓋體121之相對於處理容器120之高度方向的位置。另外，在本實施形態中，預定間隙G，係設定為例如3mm~10mm左右。 The lid body 121 is provided with a lifting mechanism 124 for moving the lid body 121 up and down with respect to the processing container 120. Further, the elevating mechanism 124 may be provided on the side of the processing container 120 as long as the lid body 121 and the processing container 120 can move relative to each other and move up and down. Further, by the elevating mechanism 124, the position of the lid body 121 in the height direction of the processing container 120 is adjusted so that a predetermined gap G is formed between the lower end portion 131a of the side plate 131 and the upper end portion 120a of the processing container 120. Further, in the present embodiment, the predetermined gap G is set to, for example, about 3 mm to 10 mm.
在蓋體121下面之中央部，係設置有氣體供給部132(該氣體供給部，係從晶圓W之上方對該晶圓W供給處理氣體)。氣體供給部132，係如圖4所示，具有縱剖面形狀形成為下底側為狹窄之梯形狀的大致圓錐梯形狀。在氣體供給部132，係連通有形成於蓋體121之內部的氣體流路133。 A gas supply unit 132 (the gas supply unit supplies the processing gas to the wafer W from above the wafer W) is provided at a central portion of the lower surface of the lid body 121. As shown in FIG. 4, the gas supply unit 132 has a substantially conical trapezoidal shape in which a vertical cross-sectional shape is formed so that the lower bottom side has a narrow trapezoidal shape. The gas supply unit 132 communicates with the gas flow path 133 formed inside the lid 121.
如圖4所示，在氣體流路133，係連接有氣體 供給管135。在氣體供給管135之氣體流路133之相反側的端部，係分別連接有：HMDS氣體供給源140，供給作為鹼性之氣體的HMDS氣體；及氮氣供給源141，供給作為沖洗氣體之例如氮氣。在氣體流路133之HMDS氣體供給源140的下游側與氮氣供給源141的下游側，係分別設置有閥體142、143(該閥體，係具備有開關功能及流量調整功能)。藉此，可將對晶圓W供給的氣體交互地切換為HMDS氣體與氮氣。另外，亦可從氣體供給部132供給鹼溶液之噴霧來代替鹼性之氣體。在本實施形態中，係亦可供給例如HMDS之噴霧來代替HMDS氣體。又，作為鹼性之氣體，係亦可使用如本實施形態之HMDS氣體般，在常溫下使液相者蒸汽化的氣體，或例如氨氣般，在常溫下為氣相的氣體之任一。 As shown in FIG. 4, a gas is connected to the gas flow path 133. Supply tube 135. An HMDS gas supply source 140 is connected to an end portion of the gas supply pipe 135 opposite to the gas flow path 133, and an HMDS gas as an alkaline gas is supplied, and a nitrogen gas supply source 141 is supplied, for example, as a flushing gas. Nitrogen. On the downstream side of the HMDS gas supply source 140 of the gas flow path 133 and the downstream side of the nitrogen gas supply source 141, valve bodies 142 and 143 (the valve body having a switching function and a flow rate adjustment function) are provided. Thereby, the gas supplied to the wafer W can be alternately switched to HMDS gas and nitrogen gas. Further, instead of the alkaline gas, a spray of the alkali solution may be supplied from the gas supply unit 132. In the present embodiment, a spray of HMDS, for example, may be supplied instead of the HMDS gas. Further, as the alkaline gas, any gas which vaporizes the liquid phase at normal temperature as in the HMDS gas of the present embodiment or gas which is a gas phase at normal temperature, such as ammonia gas, may be used. .
在蓋體121之下面且氣體供給部132的外側，係形成有中心排氣部150。中心排氣部150，係藉由複數個排氣孔151(該排氣孔，係在與晶圓W之中央部相對向的位置且氣體供給部132的外側，同心圓狀地形成於例如氣體供給部132)所構成。 A central exhaust portion 150 is formed on the lower surface of the lid body 121 and outside the gas supply portion 132. The center exhaust portion 150 is formed concentrically on, for example, a gas by a plurality of exhaust holes 151 (the exhaust holes are located at positions facing the central portion of the wafer W and outside the gas supply portion 132). The supply unit 132) is configured.
在蓋體121之內部，係形成有與各排氣孔151連通的中心排氣路徑152。在中心排氣路徑152，係連接有中心排氣管153。中心排氣管153，係經由排氣集管154(該排氣集管，係共同地設置於該中心排氣管153與後述之外周排氣管163)，連接於例如真空泵等的排氣裝置155。藉此，可從中心排氣部150對處理空間S內的環 境進行排氣。在排氣集管154，係設置有具備開關功能的閥體156。 Inside the lid body 121, a central exhaust path 152 that communicates with each of the exhaust holes 151 is formed. A central exhaust pipe 153 is connected to the center exhaust path 152. The center exhaust pipe 153 is connected to an exhaust device such as a vacuum pump via an exhaust manifold 154 (the exhaust manifold is commonly provided in the center exhaust pipe 153 and an outer peripheral exhaust pipe 163 described later). 155. Thereby, the ring in the processing space S can be accessed from the central exhaust portion 150. Exhaust. A valve body 156 having a switching function is provided in the exhaust header 154.
又，在蓋體121之側板131的下端部131a，係形成有外周排氣部160(該外周排氣部，係從比載置台122上之晶圓W更往外方來對處理空間S內之環境進行排氣)。外周排氣部160，係藉由複數個排氣孔161(該排氣孔，係沿著蓋體121之下端部131a的圓周方向，等間隔地設置為例如環狀)所構成。各排氣孔161，係與形成於蓋體121之內部的外周排氣路徑162連通。 Further, an outer peripheral exhaust portion 160 is formed on the lower end portion 131a of the side plate 131 of the lid body 121 (the outer peripheral exhaust portion is formed outward from the wafer W on the mounting table 122 in the processing space S). The environment is vented). The outer peripheral exhaust portion 160 is constituted by a plurality of exhaust holes 161 (the exhaust holes are provided at equal intervals along the circumferential direction of the lower end portion 131a of the lid body 121, for example, in a ring shape). Each of the exhaust holes 161 communicates with an outer peripheral exhaust path 162 formed inside the lid 121.
外周排氣路徑162，係經由外周排氣管163，連接於排氣集管154。外周排氣管163之排氣集管154側的端部，係連接於閥體156(該閥體，係設置於中心排氣管153)與排氣裝置155之間。在外周排氣管163，係設置有流量限制機構164(該流量限制機構，係限制流經該外周排氣管163之流體的流量)。流量限制機構164，係構成為在開啟操作中心排氣管153之閥體156時，使流經外周排氣管163之流體的流量與流經外周排氣管153之流體的流量相等或變少。作為流量限制機構164，雖係可使用例如孔口等，但流量限制機構164係只要具備有限制流量之功能來作為最小限度的功能即可，且亦可使用除了例如有流量限制的功能以外，亦具有開關功能之針閥等的閥體來代替孔口。 The outer peripheral exhaust path 162 is connected to the exhaust header 154 via the outer peripheral exhaust pipe 163. An end portion of the outer peripheral exhaust pipe 163 on the exhaust manifold 154 side is connected between the valve body 156 (which is provided in the center exhaust pipe 153) and the exhaust device 155. The peripheral exhaust pipe 163 is provided with a flow rate restricting mechanism 164 (which limits the flow rate of the fluid flowing through the outer peripheral exhaust pipe 163). The flow restricting mechanism 164 is configured to make the flow rate of the fluid flowing through the outer peripheral exhaust pipe 163 equal to or smaller than the flow rate of the fluid flowing through the outer peripheral exhaust pipe 153 when the valve body 156 of the operation center exhaust pipe 153 is opened. . As the flow rate restricting means 164, for example, an orifice or the like may be used. However, the flow rate restricting means 164 may have a function of restricting the flow rate as a minimum function, and may use a function other than, for example, a flow restriction. A valve body such as a needle valve having a switching function is also used instead of the orifice.
另外，疏水化處理裝置41，係具有與酸失活處理裝置44相同的構成。又，本實施形態之改質處理裝 置45，係除了從氣體供給部132所供給的氣體為用以光阻膜之矽烷化之含矽低分子化合物、TMSDMA(N一二甲基氨基三甲基矽烷)氣體該點以外，具有與酸失活處理裝置44相同的構成。 Further, the hydrophobization treatment device 41 has the same configuration as the acid deactivation treatment device 44. Moreover, the modified processing device of the embodiment In addition to the point that the gas supplied from the gas supply unit 132 is a ruthenium-containing low molecular compound and a TMSDMA (N-dimethylaminotrimethyl decane) gas for the sulfonation of the photoresist film, The acid deactivation processing device 44 has the same configuration.
在以上之基板處理系統1，係如圖1所示，設置有控制部200。控制部200，係例如為電腦，具有程式儲存部(未圖示)。在程式儲存部，係儲存有控制基板處理系統1之晶圓W之處理的程式。又，在程式儲存部，係亦儲存有用以控制上述之各種裝置或搬送裝置等之驅動系統的動作，從而實現基板處理系統1之塗佈顯像處理的程式。此外，前述程式，係記錄於例如電腦可讀取之硬碟(HD)、軟碟片(FD)、光碟(CD)、磁光碟(MO)、記憶卡等之電腦可讀取之記憶媒體H者，亦可為由其記憶媒體H安裝於控制部200者。 In the above substrate processing system 1, as shown in FIG. 1, a control unit 200 is provided. The control unit 200 is, for example, a computer and has a program storage unit (not shown). In the program storage unit, a program for controlling the processing of the wafer W of the substrate processing system 1 is stored. Further, the program storage unit stores a program for controlling the application of the substrate processing system 1 by controlling the operation of the drive system such as the various devices or the transfer device described above. In addition, the aforementioned program is a computer readable memory medium H recorded on, for example, a computer readable hard disk (HD), a floppy disk (FD), a compact disk (CD), a magneto-optical disk (MO), a memory card, and the like. Alternatively, the memory unit H may be attached to the control unit 200.
接下來，說明使用如上述構成之基板處理系統1所進行的晶圓處理。圖5，係表示該晶圓處理之主要工程之例子的流程圖。另外，在本實施形態中，於改質處理裝置45所進行的改質處理，係如上述，為光阻膜之矽烷化。 Next, wafer processing performed using the substrate processing system 1 configured as described above will be described. Figure 5 is a flow chart showing an example of the main work of the wafer processing. Further, in the present embodiment, the reforming treatment performed by the reforming processing device 45 is as described above, and is a crystallization of the photoresist film.
首先，收納有複數個晶圓W的匣盒C，係被搬入至基板處理系統1的卡匣站10，且藉由晶圓搬送裝置23，匣盒C內的各晶圓W，係被依序搬送至處理站11的收授裝置53。 First, the cassette C in which a plurality of wafers W are stored is carried into the cassette station 10 of the substrate processing system 1, and the wafers W in the cassette C are controlled by the wafer transfer device 23. The order is transferred to the receiving device 53 of the processing station 11.
其次，晶圓W，係藉由晶圓搬送裝置70被搬 送至第2區塊G2之熱處理裝置40，進行溫度調節處理。其後，晶圓W，係藉由晶圓搬送裝置71被搬送至例如第1區塊G1之下部反射防止膜形成裝置31，而在晶圓W上形成下部反射防止膜。其後，晶圓W，係被搬送至第2區塊G2之熱處理裝置40，進行加熱處理。 Next, the wafer W is moved by the wafer transfer device 70. The heat treatment device 40 sent to the second block G2 performs temperature adjustment processing. Thereafter, the wafer W is transported to, for example, the lower portion of the first block G1 under the anti-reflection film forming device 31 by the wafer transfer device 71, and a lower anti-reflection film is formed on the wafer W. Thereafter, the wafer W is transferred to the heat treatment apparatus 40 of the second block G2, and is subjected to heat treatment.
其後，晶圓W，係係藉由晶圓搬送裝置70被搬送至第2區塊G2的疏水化處理裝置41。在疏水化處理裝置41中，係在以例如約90℃來加熱晶圓W的狀態下，供給HMDS氣體而進行疏水化處理。其次，晶圓W，係藉由晶圓搬送裝置70被搬送至第1區塊G1之光阻塗佈裝置32，而在晶圓W上形成光阻膜(圖5之工程S1)。其後，晶圓W，係被搬送至熱處理裝置40，進行預烘處理。另外，在本實施形態中，係使用例如負型之EUV光阻劑作為光阻劑。 Thereafter, the wafer W is transported to the hydrophobization processing apparatus 41 of the second block G2 by the wafer transfer device 70. In the hydrophobization treatment apparatus 41, the HMDS gas is supplied and the hydrophobization treatment is performed in a state where the wafer W is heated at, for example, about 90 °C. Next, the wafer W is transferred to the photoresist coating device 32 of the first block G1 by the wafer transfer device 70, and a photoresist film is formed on the wafer W (the process S1 of FIG. 5). Thereafter, the wafer W is transferred to the heat treatment apparatus 40 to perform prebaking treatment. Further, in the present embodiment, for example, a negative type EUV photoresist is used as the photoresist.
其次，晶圓W，係被搬送至第1區塊G1之上部反射防止膜形成裝置33，而在晶圓W上形成上部反射防止膜。其後，晶圓W，係被搬送至第2區塊G2之熱處理裝置40，進行加熱處理。 Then, the wafer W is transported to the upper portion of the first block G1 and the upper anti-reflection film forming device 33, and an upper anti-reflection film is formed on the wafer W. Thereafter, the wafer W is transferred to the heat treatment apparatus 40 of the second block G2, and is subjected to heat treatment.
其次，晶圓W，係藉由晶圓搬送裝置70被搬送至上部反射防止膜形成裝置33，而在晶圓W上形成上部反射防止膜。其後，晶圓W，係藉由晶圓搬送裝置70被搬送至熱處理裝置40，進行加熱、溫度調節。其後，晶圓W，係被搬送至周邊曝光裝置42，進行周邊曝光處理。 Next, the wafer W is transported to the upper anti-reflection film forming device 33 by the wafer transfer device 70, and an upper anti-reflection film is formed on the wafer W. Thereafter, the wafer W is transferred to the heat treatment apparatus 40 by the wafer transfer apparatus 70 to perform heating and temperature adjustment. Thereafter, the wafer W is transported to the peripheral exposure device 42 to perform peripheral exposure processing.
其後，晶圓W，係被搬送至曝光裝置12，以預定圖案進行曝光處理(圖5之工程S2)。 Thereafter, the wafer W is transported to the exposure device 12, and exposure processing is performed in a predetermined pattern (item S2 of Fig. 5).
其次，晶圓W，係藉由晶圓搬送裝置70被搬送至熱處理裝置40，且以例如約95℃進行加熱並進行PEB處理(圖5之工程S3)。藉此，例如圖6所示，藉由在光阻膜300之曝光部301所產生的酸302，使該光阻膜300的曝光部301進行去保護反應。另外，在本實施形態中，熱處理裝置40，係具有本發明之PEB處理裝置的功能。其後，晶圓W，係藉由晶圓搬送裝置70被搬送至酸失活處理裝置44。 Next, the wafer W is transported to the heat treatment apparatus 40 by the wafer transfer apparatus 70, and is heated at, for example, about 95 ° C to perform PEB processing (engineering S3 of FIG. 5). Thereby, for example, as shown in FIG. 6, the exposure portion 301 of the photoresist film 300 is subjected to a deprotection reaction by the acid 302 generated in the exposure portion 301 of the photoresist film 300. Further, in the present embodiment, the heat treatment apparatus 40 has the function of the PEB processing apparatus of the present invention. Thereafter, the wafer W is transferred to the acid deactivation processing device 44 by the wafer transfer device 70.
在酸失活處理裝置44中，係首先，在藉由升降機構124使蓋體121上昇至預定位置的狀態下，將晶圓W載置於載置台122上。 In the acid deactivation processing apparatus 44, first, the wafer W is placed on the mounting table 122 in a state where the lid body 121 is raised to a predetermined position by the elevating mechanism 124.
其次，使蓋體121下降至在蓋體121的下端部131a與處理容器120的上端部120a之間形成預定間隙G的位置，而形成處理空間S。 Next, the lid body 121 is lowered to a position where a predetermined gap G is formed between the lower end portion 131a of the lid body 121 and the upper end portion 120a of the processing container 120, thereby forming the processing space S.
其次，在藉由加熱器123將晶圓W加熱至低於PEB處理之溫度的溫度(在本實施形態，係例如50℃)後，以預定的開合度來開啟閥體142，從氣體供給部132對處理空間S內以預定流量供給例如濃度大概為1%的HMDS氣體。又，HMDS氣體之供給的同時，起動排氣裝置155，且從外周排氣部160以預定流量來排出HMDS氣體。另外，排氣集管154之閥體156，係設成為關閉的狀態，處理空間S內之排氣，係僅從外周排氣部160來進 行。藉此，從晶圓W之中央上方所供給的HMDS氣體，係以朝向晶圓W之外周緣部均勻擴散的方式，流經晶圓W之上方。藉此，HMDS氣體，係滲透至晶圓W上的光阻膜300內，在曝光部301所產生的酸302被中和而失活(圖5之工程S4)。 Next, after the wafer W is heated to a temperature lower than the temperature of the PEB treatment by the heater 123 (for example, 50 ° C in the present embodiment), the valve body 142 is opened at a predetermined degree of opening, from the gas supply portion. 132 supplies, for example, HMDS gas having a concentration of approximately 1% at a predetermined flow rate in the processing space S. Further, at the same time as the supply of the HMDS gas, the exhaust device 155 is started, and the HMDS gas is discharged from the outer peripheral exhaust portion 160 at a predetermined flow rate. Further, the valve body 156 of the exhaust manifold 154 is closed, and the exhaust gas in the processing space S is only from the outer exhaust portion 160. Row. Thereby, the HMDS gas supplied from the center of the wafer W flows over the wafer W so as to uniformly diffuse toward the outer peripheral portion of the wafer W. Thereby, the HMDS gas permeates into the photoresist film 300 on the wafer W, and the acid 302 generated in the exposure portion 301 is neutralized and deactivated (the process S4 in Fig. 5).
在供給HMDS氣體預定時間而使光阻膜300中的酸302失活後，將閥體142關閉並停止HMDS氣體之供給。而且，以預定開合度開啟閥體143，從氣體供給部132以預定流量供給氮氣，對殘存於處理空間S內的HMDS氣體進行沖洗例如10秒。又，氮氣之供給的同時，開啟操作閥體156，而亦從中心排氣部150對處理空間S內進行排氣。藉此，沖洗處理容器120內之HMDS氣體。 After the HMDS gas is supplied for a predetermined time to deactivate the acid 302 in the photoresist film 300, the valve body 142 is closed and the supply of the HMDS gas is stopped. Then, the valve body 143 is opened at a predetermined opening degree, nitrogen gas is supplied from the gas supply unit 132 at a predetermined flow rate, and the HMDS gas remaining in the processing space S is rinsed, for example, for 10 seconds. Further, while the supply of nitrogen gas is supplied, the operation valve body 156 is opened, and the inside of the processing space S is also exhausted from the center exhaust portion 150. Thereby, the HMDS gas in the treatment container 120 is rinsed.
在處理容器120內之沖洗結束後，關閉各閥體143、156，並且停止排氣裝置155。其次，藉由升降機構124，使蓋體上升至預定高度，而酸失活處理結束後的晶圓W會被搬出至處理容器120的外部。 After the flushing in the processing vessel 120 is completed, the respective valve bodies 143, 156 are closed, and the exhausting means 155 is stopped. Next, the lifter 124 raises the lid to a predetermined height, and the wafer W after the acid deactivation process is completed is carried out to the outside of the processing container 120.
其後，晶圓W，係藉由晶圓搬送裝置70被搬送至改質處理裝置45。在改質處理裝置45中，係進行光阻膜300之矽烷化。在改質處理裝置45中，係在晶圓W以矽烷化溫度以上、光阻膜300之溶解溫度以下(本實施形態中，係例如130℃)來進行加熱後，對光阻膜300供給TMSDMA氣體。藉此，在曝光部301的羧基附加有矽醇基，而光阻膜300之曝光部301進行矽烷化(圖5之工 程S5)。另外，關於在改質處理裝置45中供給TMSDMA氣體之際的順序，係與在酸失活處理裝置44中供給HMDS氣體之際的順序相同。 Thereafter, the wafer W is transferred to the reforming processing device 45 by the wafer transfer device 70. In the reforming treatment device 45, decaneization of the photoresist film 300 is performed. In the reforming processing device 45, the wafer W is heated at a temperature equal to or higher than the melting temperature of the photoresist film 300 (for example, 130 ° C in the present embodiment), and then the TMSDMA is supplied to the photoresist film 300. gas. Thereby, a sterol group is added to the carboxyl group of the exposure portion 301, and the exposure portion 301 of the photoresist film 300 is subjected to decaneization (Fig. 5 Cheng S5). In addition, the order in which the TMSDMA gas is supplied to the reforming processing device 45 is the same as the order in which the HMDS gas is supplied to the acid deactivation processing device 44.
在此，在顯像處理之前，未使光阻膜中的酸失活的情況下，在PEB處理後的光阻膜300中，係例如圖7所示，在曝光部301所產生的酸302，係因PEB處理的熱能而形成為擴散至未曝光部303的狀態。又，如此一來，當在酸302未失活的狀態下，進行例如伴隨有加熱處理的改質處理時，則因改質處理之際的熱能而進一步使酸302擴散，並且即使在本來不應被去保護的未曝光部303，亦進行去保護。該點，在本實施形態中，由於是藉由酸失活處理裝置44已使光阻膜300中的酸302失活，因此，即使在改質處理裝置45以PEB處理之溫度以上的溫度進行加熱，酸302亦不會擴散至光阻膜300內而使未曝光部303去保護。換言之，在PEB處理後，光阻膜300中之已去保護的區域不會改變。 Here, in the case where the acid in the photoresist film is not deactivated before the development process, in the photoresist film 300 after the PEB treatment, for example, the acid 302 generated in the exposure portion 301 is as shown in FIG. It is in a state of being diffused to the unexposed portion 303 by the thermal energy of the PEB treatment. In addition, when the acid 302 is not deactivated, for example, when the reforming process is accompanied by the heat treatment, the acid 302 is further diffused by the heat energy during the reforming process, and even if it is not originally The unexposed portion 303 to be protected is also deprotected. In this regard, in the present embodiment, since the acid 302 in the photoresist film 300 is deactivated by the acid deactivation processing device 44, even if the reforming treatment device 45 is at a temperature higher than the temperature of the PEB treatment. When heated, the acid 302 does not diffuse into the photoresist film 300 to deprotect the unexposed portion 303. In other words, the deprotected area in the photoresist film 300 does not change after the PEB process.
其後，晶圓W，係藉由晶圓搬送裝置70被搬送至顯像處理裝置30，且對晶圓W上供給例如乙酸丁酯而進行負型的顯像處理(圖5之工程S6)。其結果，如圖8所示，未曝光部303被去除而形成預定的光阻圖案310。此時，在光阻膜300，係由於不存在酸302(該酸，係光阻圖案310之線寬的變動因素)，因此，可不受酸302的影響而進行顯像處理。又，由於在PEB處理後，以立即使酸302失活的方式，光阻膜300中之已去保護的區 域，係不會在酸失活工程後變動，因此，即使為進行例如矽烷化般之晶圓W被曝露於加熱環境的改質處理時，亦可獲得所期望之線寬的光阻圖案310。 Thereafter, the wafer W is transferred to the development processing device 30 by the wafer transfer device 70, and a negative development process is performed by supplying, for example, butyl acetate to the wafer W (engineering S6 of FIG. 5). . As a result, as shown in FIG. 8, the unexposed portion 303 is removed to form a predetermined photoresist pattern 310. At this time, in the photoresist film 300, since the acid 302 (the acid is a factor of variation in the line width of the photoresist pattern 310) is not present, the development process can be performed without being affected by the acid 302. Also, due to the manner in which the acid 302 is immediately deactivated after the PEB treatment, the deprotected region in the photoresist film 300 The domain does not change after the acid deactivation process. Therefore, even if the wafer W is exposed to a heating environment, for example, by crystallization, a desired line width resist pattern 310 can be obtained. .
又，由於是以曝光部301進行矽烷化的方式，使該曝光部301硬化，而變得更難以溶解於乙酸丁酯，因此，負型顯像之際的曝光部301與未曝光部303之間之對於乙酸丁酯的溶解對比度提升。其結果，光阻圖案310之線邊緣粗度(LER)或面內均一性(CDU)提升，可獲得更高精度的光阻圖案310。 In addition, since the exposed portion 301 is cured by the exposure unit 301, the exposed portion 301 is hardened and is more difficult to be dissolved in butyl acetate. Therefore, the exposed portion 301 and the unexposed portion 303 during negative development are used. The dissolution contrast of butyl acetate is increased. As a result, the line edge thickness (LER) or in-plane uniformity (CDU) of the photoresist pattern 310 is improved, and a photoresist pattern 310 having higher precision can be obtained.
顯像結束後，晶圓W，係藉由晶圓搬送裝置70被搬送至熱處理裝置40，進行後烘烤處理。其後，晶圓W，係藉由晶圓搬送裝置70被搬送至第3區塊G3的收授裝置50，其後，藉由卡匣站10的晶圓搬送裝置23被搬送至預定之卡匣載置板21的匣盒C。如此一來，一連串的光微影工程結束。 After the development is completed, the wafer W is transferred to the heat treatment apparatus 40 by the wafer transfer apparatus 70, and the post-baking process is performed. Thereafter, the wafer W is transported to the receiving device 50 of the third block G3 by the wafer transfer device 70, and then transported to the predetermined card by the wafer transfer device 23 of the cassette station 10. The cassette C of the mounting plate 21 is placed. As a result, a series of light lithography projects ended.
根據以上之實施形態，由於是對PEB處理(圖5之工程S3)後的晶圓W，以酸失活處理裝置44來供給作為鹼性之氣體的HMDS氣體，從而中和光阻膜300中的酸302並使其失活(圖5之工程S4)，因此，在顯像處理之際，已不存在酸302(該酸，係光阻圖案310之線寬的變動因素)，故可不受酸302的影響而進行顯像處理。因此，可將該光阻圖案310之線寬設成為所期望者。又，由於在酸失活工程後，光阻膜300中之已去保護的區域係不會改變，因此，即使在顯像處理前，進行例如伴隨 有矽烷化般之熱處理的處理，亦可獲得所期望之線寬的光阻圖案310。 According to the above embodiment, the wafer W after the PEB treatment (the process S3 in FIG. 5) is supplied with the HMDS gas as the alkaline gas by the acid deactivation processing device 44, thereby neutralizing the photoresist film 300. The acid 302 is inactivated (engineering S4 of Fig. 5). Therefore, at the time of the development processing, the acid 302 (the acid, the variation factor of the line width of the photoresist pattern 310) is absent, so that it is not affected by the acid. The imaging process is performed with the influence of 302. Therefore, the line width of the photoresist pattern 310 can be set as desired. Moreover, since the deprotected region in the photoresist film 300 does not change after the acid deactivation process, even before the development process, for example, accompanying The photoresist pattern 310 having a desired line width can also be obtained by a heat treatment like a decane.
又，由於是在顯像處理前，以進行光阻膜300之矽烷化的方式，使光阻膜300的曝光部301與未曝光部303之對於乙酸丁酯的溶解對比度提升，因此，光阻圖案310之線邊緣粗度(LER)或面內均一性(CDU)提升，可獲得更高精度的光阻圖案310。 Further, since the photo-resistance of the exposed portion 301 of the photoresist film 300 and the unexposed portion 303 with respect to butyl acetate is improved by performing the crystallization of the photoresist film 300 before the development process, the photoresist is improved. The line edge roughness (LER) or in-plane uniformity (CDU) of the pattern 310 is increased, and a photoresist pattern 310 of higher precision can be obtained.
又，以往在進行光阻圖案310之矽烷化時，係為了避免伴隨著矽烷化的熱處理而導致酸302擴散，而在藉由顯像處理來形成光阻圖案310後，進行光阻圖案310之矽烷化。然而，在該情形下，存在有因伴隨著熱處理之對於光阻圖案310之應力等，而產生光阻圖案310倒毀之所謂圖案倒毀的問題。關於該點，如本實施形態般，在對顯像處理前的光阻膜300進行矽烷化之情況下，在矽烷化時，係處於在顯像處理後，曝光部301尚未鄰接而存在於成為光阻圖案310之未曝光部303的狀態；即便作用有伴隨著例如矽烷化之際之熱處理等的應力，亦不會存在有未曝光部303倒毀的空間。因此，針對在顯像處理後進行矽烷化之際，成為問題之圖案倒毀，亦可消解該問題。 Further, in the conventional crystallization of the photoresist pattern 310, in order to prevent the acid 302 from being diffused by the heat treatment with the decane, the photoresist pattern 310 is formed by the development process, and then the photoresist pattern 310 is formed. Decaneization. However, in this case, there is a problem that the so-called pattern collapse of the photoresist pattern 310 is reversed due to the stress or the like with respect to the photoresist pattern 310 accompanying the heat treatment. In this regard, as in the case of the present embodiment, when the photoresist film 300 before the development process is subjected to the oximation, in the case of the crystallization, the exposure unit 301 is not adjacent to each other after the development process. The state of the unexposed portion 303 of the resist pattern 310; even if a stress such as heat treatment at the time of sulfonation is applied, there is no space in which the unexposed portion 303 is destroyed. Therefore, when the crystallization of the crystallization is carried out after the development process, the problem is broken and the problem can be solved.
另外，在以上的實施形態中，雖係在PEB處理後且顯像處理之前，進行矽烷化來作為光阻劑之改質處理，但不必非要進行改質處理，即使在酸失活處理工程後立即進行顯像處理時，當然亦可獲得如下述之本發明的效果：以可不受到酸302之影響而進行顯像處理的方式，使 光阻圖案310之線寬成為所期望者。 Further, in the above embodiment, the oximation is carried out as a modification treatment of the photoresist after the PEB treatment and before the development processing, but it is not necessary to carry out the reforming treatment even in the acid deactivation treatment project. When the development process is carried out immediately afterwards, it is of course possible to obtain the effect of the present invention as follows: a method of performing development processing without being affected by the acid 302 The line width of the photoresist pattern 310 becomes desirable.
另外，在以上的實施形態中，雖係在PEB處理後使酸失活，而在將光阻膜矽烷化後，藉由負型顯像對光阻膜300進行顯像，但在顯像處理之際，係亦可進行正型顯像。如前述，藉由曝光部301進行矽烷化的方式，使該曝光部301硬化。此時，例如圖9所示，曝光部301，係以推壓未曝光部303的方式而膨脹。因此，例如圖10所示，在進行正型顯像後，殘留為光阻圖案320的未曝光部303，係以被曝光部301推壓的方式，使表面之凹凸得以均勻。其結果，在顯像處理後之光阻圖案320中，可獲得與進行所謂平滑處理時相同的效果。另外，在進行正型顯像時，在例如圖5所示之工程S6的顯像處理中，供給TMAH(四甲銨氫氧化物)等的鹼溶液來代替乙酸丁酯。 Further, in the above embodiment, although the acid is deactivated after the PEB treatment, the photoresist film 300 is developed by negative development after the photoresist film is decylated, but the development process is performed. In the meantime, positive development can also be performed. As described above, the exposure unit 301 is cured by the method of performing oximation by the exposure unit 301. At this time, for example, as shown in FIG. 9, the exposure unit 301 is inflated so as to press the unexposed portion 303. Therefore, for example, as shown in FIG. 10, after the positive development is performed, the unexposed portion 303 remaining in the resist pattern 320 is uniformly pressed to the surface by the exposure portion 301. As a result, in the photoresist pattern 320 after the development processing, the same effect as when the so-called smoothing processing is performed can be obtained. Further, in the case of positive development, an alkali solution such as TMAH (tetramethylammonium hydroxide) is supplied instead of butyl acetate in the development process of the process S6 shown in FIG. 5, for example.
又，在以上的實施形態中，雖係以使用負型之EUV光阻劑來作為光阻劑的情形為例而進行說明，但亦可使用正型之EUV光阻劑來作為光阻劑。在使用正型之光阻劑時，在曝光處理中，係使用正型之遮罩，在顯像處理中，係除了使用屬於鹼溶液之例如TMAH該點以外，其餘與使用負型之EUV光阻劑時相同。另外，亦可與對上述之負型光阻劑使用正型顯像時相同地，對正型光阻劑使用負型顯像。 Further, in the above embodiment, a case where a negative EUV photoresist is used as the photoresist is described as an example, but a positive EUV photoresist may be used as the photoresist. When a positive type photoresist is used, a positive type mask is used in the exposure process, and in the development process, in addition to the point of using TMAH which is an alkali solution, the negative type EUV light is used. The same is true for the resist. Further, negative development may be used for the positive photoresist as in the case of using positive development for the above-described negative photoresist.
在以上之實施形態中，經本發明者們確認，在酸失活處理裝置44中，雖係在以例如50℃來加熱晶圓W的狀態下供給HMDS氣體，但晶圓W之加熱溫度，係 不限定於本實施形態之內容，即使為例如常溫(23℃)左右，亦會使光阻膜300中的酸302失活。因此，酸失活處理裝置44中之晶圓W的溫度，係只要為藉由HMDS氣體而使光阻膜300中之酸302失活之程度的溫度即可。另一方面，從晶圓W處理之生產率的觀點來看，雖係晶圓W之溫度越高則越促進酸之中和，但當加熱至PEB處理之際的溫度以上時，由於光阻膜300中的酸302擴散，及伴隨此之去保護反應獲得進展，因此，酸失活工程中之晶圓加熱的上限溫度，係設成為低於PEB處理溫度例如30℃左右的溫度為較佳。 In the above-described embodiment, the inventors have confirmed that the acid deactivation processing device 44 supplies the HMDS gas while the wafer W is heated at, for example, 50 ° C. However, the heating temperature of the wafer W is The present invention is not limited to the contents of the present embodiment, and the acid 302 in the photoresist film 300 is deactivated even at a normal temperature (23 ° C). Therefore, the temperature of the wafer W in the acid deactivation processing device 44 may be a temperature that is such that the acid 302 in the photoresist film 300 is deactivated by the HMDS gas. On the other hand, from the viewpoint of the productivity of the wafer W process, although the temperature of the wafer W is higher, the acid neutralization is promoted, but when heated to a temperature higher than the PEB treatment, the photoresist film is used. The diffusion of the acid 302 in 300 and the progress of the deprotection reaction accompanying this progress, and therefore, the upper limit temperature of the wafer heating in the acid deactivation process is preferably set to a temperature lower than the PEB treatment temperature, for example, about 30 °C.
另外，在以上之實施形態中，雖係以改質處理裝置45進行光阻膜300之矽烷化，但改質處理之內容，係不限定於本實施形態之內容，除了矽烷化以外，亦可進行例如在使含金屬液浸潤於光阻圖案320後，加熱處理晶圓W來使該光阻圖案320硬化這樣之伴隨著熱處理的處理。又，當然，亦可進行未伴隨有熱處理的處理。 Further, in the above embodiment, the reforming treatment device 45 performs the crystallization of the photoresist film 300, but the content of the modification treatment is not limited to the content of the embodiment, and may be in addition to the decaneization. For example, after the metal-containing liquid is wetted in the photoresist pattern 320, the wafer W is heat-treated to cure the photoresist pattern 320, which is accompanied by heat treatment. Further, of course, it is also possible to carry out a treatment which is not accompanied by heat treatment.
在光阻圖案320之硬化中，係在實施前述之工程S1~S4而使光阻膜300中的酸302失活後，對光阻膜300上供給液體狀的含金屬液。作為含金屬液，係使用例如使金屬溶解於醇的溶液，作為醇，係使用例如IPA(異丙醇)、乙醇、丁醇、MIBC(甲基異丁基甲醇)等。又，作為金屬，係使用例如Zr(鋯)、Ti(鈦)、W(鎢)等。另外，該金屬，係具有微小之徑，例如5nm以下之徑的奈米微粒。 In the curing of the photoresist pattern 320, after the above-described processes S1 to S4 are performed to deactivate the acid 302 in the photoresist film 300, a liquid metal-containing liquid is supplied onto the photoresist film 300. As the metal-containing liquid, for example, a solution in which a metal is dissolved in an alcohol is used, and as the alcohol, for example, IPA (isopropyl alcohol), ethanol, butanol, MIBC (methyl isobutylmethanol) or the like is used. Further, as the metal, for example, Zr (zirconium), Ti (titanium), W (tungsten) or the like is used. Further, the metal is a nanoparticle having a small diameter, for example, a diameter of 5 nm or less.
當含金屬液被塗佈於光阻膜300上時，含金屬液中之醇，係將光阻膜300之曝光部301中的OH基等、親和性良好的官能基設成為靶材，而進入至曝光部301中。伴隨著醇進入到該曝光部301中，並將該醇作為進入路徑，金屬亦進入至曝光部301中。而且，金屬，係與曝光部301中之OH基結合而浸潤於曝光部301中。另外，此時，金屬不會進入至未曝光部303中，金屬會沈積於該未曝光部303的表面。其後，對晶圓W上供給洗淨液，去除沈積於未曝光部303上的金屬，其次，以熱處理裝置40對晶圓W進行熱處理。藉此，進行曝光部301之硬化，其後，以進行顯像處理(工程S6)的方式，在晶圓W上形成已硬化的光阻圖案320。 When the metal-containing liquid is applied to the photoresist film 300, the alcohol in the metal-containing liquid is a target having a good affinity such as an OH group in the exposed portion 301 of the photoresist film 300. The process proceeds to the exposure unit 301. As the alcohol enters the exposure portion 301, and the alcohol is used as an entry path, the metal also enters the exposure portion 301. Further, the metal is bonded to the OH group in the exposure portion 301 to be infiltrated in the exposure portion 301. Further, at this time, the metal does not enter the unexposed portion 303, and the metal is deposited on the surface of the unexposed portion 303. Thereafter, the cleaning liquid is supplied onto the wafer W to remove the metal deposited on the unexposed portion 303, and then the heat treatment device 40 heat-treats the wafer W. Thereby, the exposure portion 301 is cured, and thereafter, the cured photoresist pattern 320 is formed on the wafer W so as to perform development processing (engineering S6).
像這樣之含金屬液的供給或洗淨液的供給，係藉由旋轉塗佈而進行。因此，在酸失活工程(工程S4)後，進行含金屬液所致之光阻圖案320之硬化的情況下，係亦可例如圖11所示，在基板處理系統1設置塗佈處理裝置400來作為液處理裝置(該液處理裝置，係對晶圓W供給含金屬液或洗淨液)。 The supply of the metal-containing liquid or the supply of the cleaning liquid is performed by spin coating. Therefore, in the case where the photoresist pattern 320 due to the molten metal is cured after the acid deactivation process (engineering S4), the coating processing apparatus 400 may be provided in the substrate processing system 1 as shown, for example, in FIG. As a liquid processing apparatus (the liquid processing apparatus supplies a metal-containing liquid or a cleaning liquid to the wafer W).
另外，在矽烷化等之PEB處理後、顯像處理之前所進行的改質處理中，雖係如前述，由於光阻膜300中的酸302已失活，因此，不會對光阻圖案310之線寬帶來影響而可進行PEB溫度以上的加熱，但即使在酸失活後，在光阻膜300中亦殘存有光酸產生劑，從而有該光酸產生劑因加熱而分解，產生酸302的可能性。 Further, in the reforming treatment performed after the PEB treatment such as decane formation or before the development processing, as described above, since the acid 302 in the photoresist film 300 is deactivated, the photoresist pattern 310 is not applied. The wire is heated to a temperature higher than the PEB temperature, but even after the acid is deactivated, a photoacid generator remains in the photoresist film 300, and the photoacid generator is decomposed by heating to generate an acid. The possibility of 302.
因此，亦可在PEB處理後，例如實施紫外線照射工程(該紫外線照射工程，係對光阻膜300照射紫外線，而使光阻膜300中之光酸產生劑失活)。在紫外線照射工程之實施時，係例如在PEB處理後且酸失活處理之前，將晶圓W搬送至紫外線照射裝置43。而且，在紫外線照射裝置43中，對晶圓W照射例如波長為193nm或248nm的紫外線。藉此，光阻膜300中之光酸產生劑失活，且即使在其後之改質處理中加熱晶圓W，亦不會從光酸產生劑產生酸302，或不會因所產生的酸302而使光阻膜300進行去保護。因此，可進行穩定的改質處理。另外，作為照射之紫外線的波長，雖係不限定於193nm或248nm者，且亦可適當使用其他波長的紫外線，但在使用比193nm短之例如波長172nm的紫外線時，由於有能量過高而光阻膜300中之保護基的結合被切斷的可能性，因此，紫外線之波長為193nm以上為較佳。 Therefore, after the PEB treatment, for example, an ultraviolet irradiation process is performed (the ultraviolet irradiation process is performed to irradiate the photoresist film 300 with ultraviolet rays to deactivate the photoacid generator in the photoresist film 300). At the time of implementation of the ultraviolet irradiation process, the wafer W is transported to the ultraviolet irradiation device 43, for example, after the PEB treatment and before the acid deactivation treatment. Further, in the ultraviolet irradiation device 43, the wafer W is irradiated with, for example, ultraviolet rays having a wavelength of 193 nm or 248 nm. Thereby, the photoacid generator in the photoresist film 300 is deactivated, and even if the wafer W is heated in the subsequent reforming process, the acid 302 is not generated from the photoacid generator, or is not generated. The acid 302 is used to deprotect the photoresist film 300. Therefore, stable reforming treatment can be performed. In addition, the wavelength of the ultraviolet ray to be irradiated is not limited to 193 nm or 248 nm, and ultraviolet rays of other wavelengths may be used as appropriate. However, when ultraviolet rays having a wavelength of 172 nm shorter than 193 nm are used, the photoresist film is excessively high in energy. The combination of the protecting groups in 300 is likely to be cleaved. Therefore, it is preferred that the ultraviolet light has a wavelength of 193 nm or more.
在以上之實施形態中，雖係以疏水化處理裝置41進行晶圓W之疏水化，以酸失活處理裝置44進行光阻膜300中之酸302的失活處理，但如前述，疏水化處理裝置41與酸失活處理裝置44，係具有同一構成，僅疏水化處理之際之晶圓W的加熱溫度與酸失活處理之際之晶圓W的加熱溫度有所不同。因此，在基板處理系統1，係亦可設置疏水化處理裝置41與酸失活處理裝置44的至少一者，在疏水化處理與酸失活處理之際，變更加熱晶圓W之加熱器123的設定溫度而進行使用。 In the above embodiment, the hydrophobization treatment device 41 performs the hydrophobization of the wafer W, and the acid deactivation treatment device 44 performs the deactivation treatment of the acid 302 in the photoresist film 300. However, as described above, the hydrophobization is performed. The processing device 41 and the acid deactivation processing device 44 have the same configuration, and the heating temperature of the wafer W at the time of the hydrophobization treatment differs from the heating temperature of the wafer W at the time of the acid deactivation treatment. Therefore, in the substrate processing system 1, at least one of the hydrophobization treatment device 41 and the acid deactivation treatment device 44 may be provided, and the heater 123 for heating the wafer W may be changed during the hydrophobization treatment and the acid deactivation treatment. Use the set temperature.
以上，雖參閱附加圖面說明了本發明之適當的實施形態，但本發明不限定於該例。只要是所屬技術領域中具有通常知識者，可於申請專利範圍所記載之思想範圍內，想到各種變形例或修正例係屬顯見，且了解到關於該等當然亦屬於本發明之技術範圍者。本發明，係不限於該例，可採用各種態樣者。本發明，係亦可適用於基板為晶圓以外的FPD(平板顯示器)、光罩用之掩模原版(Mask Reticle)等其他基板的情形。 Hereinabove, the preferred embodiments of the present invention have been described with reference to the accompanying drawings, but the invention is not limited to the examples. It is obvious that various modifications and variations can be made without departing from the spirit and scope of the invention. The present invention is not limited to this example, and various aspects can be employed. The present invention can also be applied to a case where the substrate is an FPD (flat panel display) other than a wafer, or another substrate such as a mask original for a mask.
本發明，係可應用於對基板形成光阻圖案之際。 The present invention can be applied to the formation of a photoresist pattern on a substrate.
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