M323647 八、新型說明： 【新型所屬之技術領域】 本新型是有關於一種散熱片之半成品，特別是指一種 用於晶片封裝之散熱片的半成品。 【先前技術】 如圖1所示，目前用於晶片封裝之散熱片丨包含-散 …體11及自散熱體11周緣向外且向下延伸的支撐體12 (在此以BGA為例說明）。 該用於晶片封裝之散熱片1在製程中，是在沖壓成形 後再一片-片地進行電鑛（Electroplating)，陽極處理或氧化 ^理動作，作法是將該支揮體12與負極電連接，使該散熱 浸滯於含有金屬（例如金、銀、鎳）離子的電鑛液、陽 極處理槽液或氧化處理液中，通電之後即可鍍覆一金屬層 、陽極皮膜層或氧化層，並使該散㈣i具有有防氧㈣ 钱或絕緣的能力。 由於该散熱片1是一片一片地進行處理，不僅費時費 工’也不易應用在可大量生產的自動化生產線上，在輕 效率上相當不理想。 仕表紅 片二電來說，每一散熱片1電鑛後形成在該散熱 1表面的金屬層之品質也會因為是一片一片地加工而來 差不齊。舉例來說，鍍覆在散熱片i表面上之金 二 與分佈平均度會因外在因素，❹散熱4 i浸 2 中的時間長短等而有所不同，如該散熱片i是需要= 生產，就單以金屬層厚度來說，各個完成品之間的變異= M323647 相對提高，造成出貨品質上的參差不齊 影響出產之散熱片1抗氧化触的能力。不易’進而 【新型内容】 因此，本新型之目的，即在提 用散熱片之電鑛處理、陽極處理及 理=曰曰片封裝 提升處理後品質之散熱片的半成品。 “效率’及 於是，本新型之用於晶片封 -框架單元及一散妖片單元二=政熱片半成品，包含 ^,Γ,0 ^ …片早70。該框架單元具有複數相鄰接 之框架，母一框牟_ 银 母【木圍繞界定出一容置空間，及-自該框_ 向该容置空間延伸突出之連 本 位於^熱片早％具有複數 ^ A散熱片’且每—散熱片是與該連接段 運接。 、新型之功效在於利用—框架單元搭載多數個散熱片 :並在電鍍、陽極處理或氧化處理過程中能藉由該框架單 兀一人處理多個散熱片，進而提升製程效能，各批處理後 π成un也會因為接受同樣的處理過程而品質較穩定。 【實施方式】 、有關本新型之前述及其他技術内容、特點與功效，在 下配合參考圖式之五個較佳實施例的詳細說明中，將可 清楚的呈現。 在本新型被詳細描述之前，要注意的是，在以下的說 明中，11¾ /以^Λι -，止 的7^件是以相同的編號來表示，此外，本新型 用 曰 ^ |_ UJ^. 、曰曰、了展之散熱片半成品，可被應用在各種不同的晶 封裝方式上’例如：覆晶封裝（Flip Chip，F/C)、球閘陣M323647 VIII. New description: [New technical field] The present invention relates to a semi-finished product of a heat sink, and more particularly to a semi-finished product for a heat sink of a chip package. [Prior Art] As shown in FIG. 1 , the heat sink 目前 currently used for chip packaging includes a body 11 and a support body 12 extending outward from the periphery of the heat sink 11 and extending downward (here, a BGA is taken as an example) . The heat sink 1 for chip packaging is subjected to electroplating, anodizing or oxidation treatment in a one-piece manner after press forming, in which the support 12 is electrically connected to the negative electrode. The heat dissipation is immersed in an electric ore liquid, an anode treatment bath or an oxidation treatment liquid containing metal (for example, gold, silver, nickel) ions, and a metal layer, an anode film layer or an oxide layer may be plated after being energized. And make the bulk (four) i have the ability to prevent oxygen (four) money or insulation. Since the fins 1 are processed one by one, it is not only time-consuming and labor-intensive, and is not easily applied to an automated production line that can be mass-produced, which is rather unsatisfactory in terms of light efficiency. In the case of the second sheet of electricity, the quality of the metal layer formed on the surface of the heat sink 1 after each heat sink 1 is also caused by the processing of pieces one by one. For example, the distribution of gold on the surface of the heat sink i and the distribution average may vary depending on external factors, the length of time in the heat sink 4 i, etc., such as the heat sink i is required = production In terms of the thickness of the metal layer alone, the variation between the finished products = M323647 is relatively increased, resulting in uneven loading quality affecting the ability of the heat sink 1 to resist oxidation. It is not easy to go further. [The new content] Therefore, the purpose of the present invention is to use a semi-finished product of a heat sink after the heat treatment, the anodizing treatment, and the improvement of the heat treatment of the heat sink. "Efficiency" and thus, the novel for the wafer seal-frame unit and a diffuse film unit 2 = political hot film semi-finished product, including ^, Γ, 0 ^ ... piece early 70. The frame unit has a plurality of adjacent connections Frame, mother frame _ _ mother mother [wood surrounding defines a accommodating space, and - from the frame _ to the accommodating space to extend the contiguous located in the ^ hot film early% has a plurality of ^ A heat sink ' and each - The heat sink is transported to the connection section. The new function is to use the frame unit to mount a plurality of heat sinks: and in the electroplating, anodizing or oxidation process, the heat sink can be processed by the frame alone. In order to improve the process efficiency, the π into un after each batch processing will be more stable because of the same process. [Embodiment] The above-mentioned and other technical contents, features and effects of the present invention are combined with the reference pattern. In the detailed description of the five preferred embodiments, it will be clearly shown. Before the present invention is described in detail, it should be noted that in the following description, 113⁄4 / by ^Λι -, the 7 pieces are Same as In addition, the new type of heat sink semi-finished product of 曰^ |_ UJ^., 曰曰, and exhibits can be applied to various crystal packaging methods. For example: flip chip package (Flip Chip, F/ C), the ball gate array
M323647 列封裝（Ball Grid Array，BGA)、方塊形扁平封裝（Qua(j platM323647 Column Grid Array (BGA), Square Flat Package (Qua(j plat)
Package，QFP)，超薄方塊形扁平封裝（L〇w Pr〇fUe Quad汛以 Package，LQFP)等。 #如圖2所示，本新型用於晶片封裝之散熱片半成品之 第一較佳實施例，是適用於球閘陣列封裝（BaU GHd Am% bga)用之散熱片，BGA封裝在電子產品巾，主要應用於 300接腳數以上高密度構裝的產品，如晶片組、cpu、 、部份通訊用IC等；由於BGA封裝所具有的良好電氣、 散熱性質’以及可有效縮小封裝體面積的特性，使其需求 成長率遠高於其他型態的封裝方式。 框加21。：匡一單元2具有複數相鄰接之框架21，且該等 邊二出矩形。在本實施例中’每-框架21由四個側 遭阗繞界疋出一容詈处. Λ ., 伸突出-連接ρ211隹0 邊向該容置空間延 开4右/ 進而形成如圖2所示每一框架21上 個連接段211。之所以選擇此連接段211 式，疋為了讓連接於該等連接段叫上方 鍍、陽極處理志ϋ儿占 …、片早凡3在電 ^ ^ 处理後形成之金屬層、陽極皮膜居i 虱化層之厚度更為平均。 ㈣皮膜層或 韻熱片單元3,具有複數位於該 31，母一散埶片31 間中的散熱片 …連接=形成?其相對應之框架2〗之連接 裝用之敎熱片。 31疋與8知相似之供球間陣列封 7 M323647 在本實施例中，每一連接於其相對應框架21上之气熱 片31是預先經沖壓成形後之後才進行電鍍、陽極處理二: 化處理作業。 3氧 採用本實施例之優點在於： 1.該框架單元2可搭載包含複數散熱片31的該散熱片單 兀3,在電鍍、陽極處理或氧化處理作業中可將框架單 凡2直接浸滯在一含有金屬離子的電鍍液、陽極處理槽 液或氧化處理槽液中，並藉此一次對多個散熱片Μ、曰 行處理，進而提高製程效率且各個完成品之間的電鍍、 陽極處理及氧化處理品質之較不易參差不齊。 又 2·該框架單元2可配合自純設備將魏、陽極處理或氧 化處理步驟自動化，並藉此進一步地提高製程效率。 3·該框架單元2可搭載不同種類的晶片封裝用散熱片，例 如· BGA封裝用或是覆晶（Flip chip，F/c)封裝用。 4·每一連接於其相對應框架21上之散熱片31是預先經沖 壓成形後之後才進行電鍍、陽極處理或氧化處理作業， 如此一來即可避免沖壓成形作業對金屬層、陽極皮膜或 氧化層所造成的損壞。 如圖3所示，為本新型用於晶片封裝之散熱片半成品 之第二較佳實施例，該第二較佳實施例大致上是與該第一 較佳實施例相同，相同之處於此不再贅言，其中不相同之 處在於，該第二較佳實施例中散熱片單元3中的複數散熱 片31是適用於覆晶封裝（FlipChip，F/c)之散熱片31。覆晶 封裝技術應用的應用範圍包括高階電腦、PCMCIA卡、軍事 M323647 設備、個人通訊產品、鐘錶以及液晶顯示器等。好處為可 縮小晶片封裝後的尺寸，使得晶片封裝前後大小差不多。 如圖4所示，為本新型用於晶片封裝之散熱片半成品 之苐一較佳貝施例，邊第二較佳實施例大致上是與該第二 較佳實施例相同，相同之處於此不再贅言，其中不相同之 處在於，該第三較佳實施例中每一正矩形之框架21之每一 角更可向該容置空間延伸突出一連接段211。 ★如圖5所示，為本新型用於晶片封裝之散熱片半成品 之第四較佳實施例，該第四較佳實施例大致上是與該第一 較佳實施例相同，相同之處於此不再贅言，其中不相同之 處在於，該第四較佳實施例之每一框架21也可僅形成有一 個連接段211。 产如圖6所示，為本新型用於晶片封裝之散熱片半成品 之第五較佳實施例，該第五較佳實施例大致上是與該第二 較佳實施例相同，相同之處於此不再贊言，其中不相同之 :在於，該第五較佳實施例之每一框架21之各個側邊向該 谷f工間延伸突出二連接段211，進而形成如圖6所示每一 框架上形成有人個連接段211。該等連接段2ιι之形成 置。配置方式也可再進—步地變化，所以並不應以上述 之各個較佳實施例所限。 卸納上述，本新型之用於晶片封裝之散熱片半成品， :二框架早兀2將多個散熱片31搭載，使該等散熱片” ::次進行電鍍、陽極處理或氧化處理作業，不僅提高製 ^也藉此增進成品及成品間電鍍、陽極處理及氧化 9 疋一立體圖，說明習知用Package, QFP), ultra-thin square flat package (L〇w Pr〇fUe Quad汛 Package, LQFP). As shown in FIG. 2, the first preferred embodiment of the novel heat sink semi-finished product for chip packaging is a heat sink for a ball grid array package (BaU GHd Am% bga), and the BGA is packaged in an electronic product towel. It is mainly used in high-density products with more than 300 pins, such as chipset, cpu, and some communication ICs; due to the good electrical and thermal properties of the BGA package, and the effective reduction of the package area. The characteristics make its demand growth rate much higher than other types of packaging. Add 21 to the box. The unit 2 has a plurality of adjacent frames 21, and the sides are rectangular. In the present embodiment, each of the frames 21 is surrounded by four sides, and a ridge is formed. Λ., the protrusion-connection ρ211隹0 is extended to the accommodating space by 4 right/and thus forms as shown in the figure. 2 is shown as a connection segment 211 for each frame 21. The reason for choosing this type of connection section is 211, in order to make the connection to the connection section called the upper plating, the anode treatment, the 金属 ϋ 占 、, the film is 3, the metal layer formed after the treatment, the anode film is i 虱The thickness of the layer is more even. (4) The film layer or the rhyme sheet unit 3 has a plurality of heat sinks located between the 31 and the mother and the bulk sheet 31. The connection is formed by the corresponding frame 2 of the frame. 31 323 8 相似 之 M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M M Processing jobs. The advantages of the present embodiment are as follows: 1. The frame unit 2 can carry the heat sink unit 3 including a plurality of fins 31, and the frame can be directly immersed in the plating, anodizing or oxidation processing. In a plating solution containing metal ions, an anode treatment bath or an oxidation treatment bath, and thereby processing a plurality of fins at a time, thereby improving process efficiency and plating and anodizing between the finished products. And the quality of the oxidation treatment is not easy to be uneven. Further, the frame unit 2 can be automated with the auto-purity equipment to automate the processing of the Wei, anode or oxidation treatments, thereby further improving the process efficiency. 3. The frame unit 2 can be mounted with different types of heat sinks for chip packaging, for example, for BGA packaging or Flip chip (F/c) packaging. 4. Each of the fins 31 connected to the corresponding frame 21 is subjected to electroplating, anodizing or oxidizing treatment before being formed by stamping, thereby avoiding the stamping forming operation on the metal layer, the anode film or Damage caused by the oxide layer. As shown in FIG. 3, which is a second preferred embodiment of the heat sink semi-finished product for chip packaging, the second preferred embodiment is substantially the same as the first preferred embodiment, and the same is true here. In other words, the difference is that the plurality of heat sinks 31 in the heat sink unit 3 in the second preferred embodiment are heat sinks 31 suitable for flip chip packages (F/C). Applications for flip chip packaging applications include high-end computers, PCMCIA cards, military M323647 devices, personal communication products, clocks, and liquid crystal displays. The benefit is that the size of the chip package can be reduced, making the chip package approximately the same size before and after. As shown in FIG. 4, the second preferred embodiment of the present invention is substantially the same as the second preferred embodiment. It is no longer arguable that the corners of each of the positive rectangular frames 21 in the third preferred embodiment are more likely to extend toward the accommodating space to protrude from the connecting portion 211. As shown in FIG. 5, which is a fourth preferred embodiment of the heat sink semi-finished product for chip packaging, the fourth preferred embodiment is substantially the same as the first preferred embodiment, and the same is true here. It is no longer a rumor that the frame 21 of the fourth preferred embodiment may be formed with only one connecting segment 211. The fifth preferred embodiment of the heat sink semi-finished product for chip packaging is shown in FIG. 6. The fifth preferred embodiment is substantially the same as the second preferred embodiment, and the same is the same. It is no longer the same, in which the different sides of each frame 21 of the fifth preferred embodiment extend toward the valley f to protrude the two connecting segments 211, thereby forming each as shown in FIG. A connecting section 211 is formed on the frame. The connection segments 2 are formed. The configuration may also be changed step by step, and therefore should not be limited to the preferred embodiments described above. Disposing the above-mentioned heat sink semi-finished product for chip packaging, the two frames are mounted on the plurality of heat sinks 31, so that the heat sinks are selectively electroplated, anodized or oxidized. Improve the system to enhance the plating, anodizing and oxidation between the finished product and the finished product.
M323647 處理之品質的穩定性，故確實能達到本新型之目的。 惟以上所述者，僅為本新型之五個較佳實施例而已， 當不能以此限定本新型實施之範圍，即大凡依本新型申請 專利範圍及新型說明内容所作之簡單的等效變化與修飾， 皆仍屬本新型專利涵蓋之範圍内。 【圖式簡單說明】 罔 圖2是一俯視圖，說明本新型用於晶片封裝之散熱片 半成品之第一較佳實施例； 圖3是-俯視圖，說明本新型用於晶片封|之散熱片 牛成之苐二較佳實施例； 圖4是一俯視圖，說明本新型用於晶片封裝^ 半成品之第三較佳實施例； 、之散熱片 圖51是一俯視圖，說明本新型用於晶片 半成品之第四較佳實施例；及 “之散熱片 圖6是一俯視圖，說明本新型用於晶片 半成品之第五較佳實施例。 纟之散熱片 10 M323647 【主要元件符號說明】 2…… •…框架單元 3 ••… ••…散熱片單元 21 ····. …·框架 31···· •…·散熱片 211… •…連接部 11The stability of the quality of the M323647 treatment can indeed achieve the purpose of this new model. However, the above-mentioned ones are only the five preferred embodiments of the present invention, and the scope of the present invention cannot be limited thereto, that is, the simple equivalent changes made by the novel patent application scope and the new description contents are Modifications are still within the scope of this new patent. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 2 is a top plan view showing a first preferred embodiment of the present invention for a heat sink semi-finished product for wafer packaging; FIG. 3 is a plan view showing the heat sink of the present invention for a wafer package | FIG. 4 is a plan view showing a third preferred embodiment of the present invention for a wafer package, and a heat sink, FIG. 51 is a top view showing the novel for a wafer semi-finished product. Fourth Preferred Embodiment; and "The Heatsink Figure 6 is a top view illustrating the fifth preferred embodiment of the present invention for a wafer semi-finished product. 纟 Heat sink 10 M323647 [Main component symbol description] 2... •... Frame unit 3 ••... ••... Heat sink unit 21 ·······Frame 31······· Heat sink 211... • Connection unit 11