TW201919202A - Component of bridge rectifier circuit which has good heat dissipation, can save the processing procedure and cost, and can improve the consistency and reliability of product - Google Patents

Component of bridge rectifier circuit which has good heat dissipation, can save the processing procedure and cost, and can improve the consistency and reliability of product Download PDF

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TW201919202A
TW201919202A TW106138171A TW106138171A TW201919202A TW 201919202 A TW201919202 A TW 201919202A TW 106138171 A TW106138171 A TW 106138171A TW 106138171 A TW106138171 A TW 106138171A TW 201919202 A TW201919202 A TW 201919202A
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wafer
carrier
bridge rectifier
pin
rectifier circuit
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TW106138171A
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TWI647814B (en
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陳文彬
李國棟
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矽萊克電子股份有限公司
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Abstract

The present invention provides a component of bridge rectifier circuit, which can be applied to the single-phase bridge rectifier circuit and the three-phase bridge rectifier circuit, both of which comprise in-line electronic components including a lead frame; a first chip disposed on a first carrier board of the lead frame; and a second chip disposed on a second carrier board of the lead frame, wherein the first chip and the second chip are in contact with the chip substrate through the same surface, a first pin of the lead frame is electrically connected to the first carrier board, a second pin of the lead frame is electrically connected to the second carrier board, one surface of the first chip deviated from the first carrier board is electrically connected to the second carrier board, and one surface of the second chip deviated from the second carrier board is electrically connected to a third pin. The first pin and the third pin of two or three electronic components of the bridge rectifier circuit are respectively served as a first DC output terminal and a second DC output terminal, and the second pin is served as an AC input terminal. The heat dissipation of the present invention is good, which can save processing procedures, costs and improve product consistency and reliability.

Description

橋式整流電路部件  Bridge rectifier circuit component  

本發明係提供一種橋式整流電路部件,尤指涉及應用於交流輸入轉變為直流輸出電路之電路部件,特別是涉及應用於一種單相橋式整流電路,還涉及應用於一種三相橋式整流電路。 The invention provides a bridge rectifier circuit component, in particular to a circuit component applied to an AC input to a DC output circuit, in particular to a single-phase bridge rectifier circuit, and to a three-phase bridge rectifier Circuit.

按,橋式整流器(Bridge Rectifiers)也叫做整流橋堆,係利用二極體的單向導通性進行整流最常用的電路,常用來將交流電轉變為直流電。 Press, Bridge Rectifiers, also known as rectifier bridges, are the most commonly used circuits for rectifying the diodes using the single-conductivity of diodes. They are commonly used to convert alternating current into direct current.

傳統的單相橋式整流器是由四個整流二極體作橋式連接,其中單個整流二極體為利用絕緣塑膠及導體引線進行封裝成一個二極體晶片所構成,然而,四個整流二極體封裝在一個裝置個體內所構成的單相橋式整流器,因為需要在其封裝的裝置本體內形成共陽共陰,以及串聯的多層次關係而結構較為複雜,所以一般只能採用全絕緣式的封裝,導致整體的散熱性較差,且因晶片的封裝加工需要翻轉晶片等程序,亦較難使用全自動加工方式,加工過程較為繁瑣,產品一致性及可靠性較差,即為從事於此行業者所亟欲研究改善之關鍵所在。 The conventional single-phase bridge rectifier is bridged by four rectifying diodes, wherein a single rectifying diode is formed by encapsulating a diode chip with insulating plastic and conductor leads, however, four rectifying diodes A single-phase bridge rectifier composed of a pole body packaged in a single device, because it needs to form a common symmetry in the body of the packaged device, and a multi-level relationship in series and a complicated structure, generally only full insulation can be used. The package is packaged, resulting in poor overall heat dissipation, and the process of wafer packaging requires flipping of the wafer, etc. It is also difficult to use the fully automatic processing method, the processing process is cumbersome, and the product consistency and reliability are poor. The industry is eager to study the key to improvement.

故,發明人有鑑於上述習用之問題與缺失,乃搜集相關資 料經由多方的評估及考量,並利用從事於此行業之多年研發經驗不斷的試作與修改,始有此種橋式整流電路部件發明專利誕生。 Therefore, in view of the above-mentioned problems and deficiencies in the above-mentioned applications, the inventors have collected and evaluated relevant data through various parties, and have used the trial and modification of many years of research and development experience in this industry to start the invention of such bridge rectifier circuit components. The patent was born.

本發明之主要目的乃在於橋式整流電路部件應用的單相橋式整流電路和三相橋式整流電路包括直插式之電子元器件,該電子元器件包含引線框架;第一晶片設於引線框架之第一載板上;第二晶片設於引線框架之第二載板上,第一晶片與第二晶片通過相同的面與載晶板接觸,而引線框架之第一引腳電性連接至第一載板上,第二引腳電性連接至第二載板上,且第一晶片背離第一載板之一面電性連接至第二載板上,第二晶片背離第二載板之一面電性連接至第三引腳上;前述橋式整流電路包括二個或三個電子元器件,電子元器件之第一引腳與第三引腳係分別作為第一直流輸出端、第二直流輸出端,第二引腳係分別作為交流輸入端,本發明之電子元器件散熱性良好,並優於傳統的由四個或六個整流二極體封裝在一個晶片內形成的單相或三相橋式整流器,其中第一晶片和第二晶片係通過相同的面與載晶板接觸,即都是P型半導體向上或都是N型半導體向上,因此在封裝時便不需要對晶片進行翻轉,可以節省加工程式,節約成本、提高生產效率。 The main purpose of the present invention is to provide a single-phase bridge rectifier circuit and a three-phase bridge rectifier circuit for use in a bridge rectifier circuit component, including a direct-inserted electronic component including a lead frame; the first chip is disposed on the lead a first carrier on the frame; a second chip is disposed on the second carrier of the lead frame, the first wafer and the second wafer are in contact with the carrier plate through the same surface, and the first pin of the lead frame is electrically connected To the first carrier, the second pin is electrically connected to the second carrier, and the first wafer is electrically connected to the second carrier from the first carrier, and the second carrier is separated from the second carrier. One of the sides is electrically connected to the third pin; the bridge rectifier circuit includes two or three electronic components, and the first pin and the third pin of the electronic component respectively serve as the first DC output terminal, The second DC output terminal and the second pin are respectively used as the AC input terminals, and the electronic component of the invention has good heat dissipation performance, and is superior to the conventional single package formed by four or six rectifier diode packages in one wafer. Phase or three phase bridge rectifier, where A wafer and a second wafer are in contact with the crystal plate through the same surface, that is, the P-type semiconductor is upward or all of the N-type semiconductor is upward, so that the wafer does not need to be flipped during packaging, which saves processing steps and saves Cost and increase production efficiency.

100‧‧‧電子元器件 100‧‧‧Electronic components

102‧‧‧引線框架 102‧‧‧ lead frame

104‧‧‧第一晶片 104‧‧‧First chip

106‧‧‧第二晶片 106‧‧‧second chip

10‧‧‧第一載板 10‧‧‧ first carrier

20‧‧‧第二載板 20‧‧‧Second carrier

30‧‧‧外露散熱部 30‧‧‧Exposed heat sink

32‧‧‧第一引腳 32‧‧‧First pin

34‧‧‧第二引腳 34‧‧‧second pin

36‧‧‧第三引腳 36‧‧‧ third pin

40‧‧‧絕緣保護外層 40‧‧‧Insulation protection outer layer

41‧‧‧鎖固孔 41‧‧‧Lock hole

第一圖 係為本發明應用於單相橋式整流電路之電路原理圖。 The first figure is a circuit schematic diagram of the invention applied to a single-phase bridge rectifier circuit.

第二圖 係為本發明電子元器件之示意圖。 The second figure is a schematic diagram of the electronic components of the present invention.

第三圖 係為本發明電子元器件的引線框架與晶片之連接關係示意圖。 The third figure is a schematic diagram showing the connection relationship between the lead frame and the wafer of the electronic component of the present invention.

第四圖 係為本發明應用於三相橋式整流電路之電路原理圖。 The fourth figure is a circuit schematic diagram of the invention applied to the three-phase bridge rectifier circuit.

為達成上述目的及功效,本發明所採用之技術手段及其構造,茲繪圖就本發明之較佳實施例詳加說明其構造與功能如下,俾利完全瞭解。 In order to achieve the above objects and effects, the technical means and constructions of the present invention will be described in detail with reference to the preferred embodiments of the present invention.

請參閱第一、二、三圖所示,係分別為本發明應用於單相橋式整流電路之電路原理圖、電子元器件之示意圖及電子元器件的引線框架與晶片之連接關係示意圖,由圖中可清楚看出,本發明之橋式整流電路部件在本實施例中應用的單相橋式整流電路包括二個直插式之電子元器件100,並於電子元器件100包含引線框架102、第一晶片104、第二晶片106及絕緣保護外層40,其中:該引線框架102為導體材質,包含第一引腳32、第二引腳34、第三引腳36、用於設置晶片的載晶板及連接於載晶板之外露散熱部30,載晶板包含第一載板10及與第一載板10隔離之第二載板20,需要說明的是,第三圖係為了示意出第一晶片104和第二晶片106的正面、背面與引線框架102的位置關係以及連接關係的示意圖,因此第一引腳32和第二引腳34的實際延伸方向與第三圖中不同,應該如第二圖中一樣係與第一晶片104、第二晶片106平行的,且第三圖省略了與第二載板20相連接的第二引腳34。 Please refer to the first, second and third figures, which are schematic diagrams of the circuit schematic diagram of the invention applied to the single-phase bridge rectifier circuit, the schematic diagram of the electronic components and the connection relationship between the lead frame of the electronic component and the wafer, respectively. As can be clearly seen from the figure, the single-phase bridge rectifier circuit to which the bridge rectifier circuit component of the present invention is applied in the present embodiment includes two in-line electronic components 100, and the electronic component 100 includes the lead frame 102. The first wafer 104, the second wafer 106, and the insulating protective outer layer 40, wherein the lead frame 102 is made of a conductor material, and includes a first pin 32, a second pin 34, and a third pin 36 for setting a wafer. The crystal plate and the exposed crystal heat dissipation portion 30 are connected to the crystal plate. The crystal plate includes a first carrier 10 and a second carrier 20 separated from the first carrier 10. The third figure is for illustration. A schematic diagram of the positional relationship and the connection relationship between the front surface and the back surface of the first wafer 104 and the second wafer 106 and the lead frame 102, and thus the actual extension directions of the first pin 32 and the second pin 34 are different from those in the third figure. Should be as in the second picture The first system and the wafer 104, the wafer 106 parallel to the second, and the third FIG omit the second pin 34 and the second carrier plate 20 is connected.

該第一晶片104為二極體晶片,即晶片可以作為一個二極體,晶片的正面與背面的極性相反,並設於第一載板10上。 The first wafer 104 is a diode wafer, that is, the wafer can be used as a diode. The front and back sides of the wafer have opposite polarities and are disposed on the first carrier 10.

該第二晶片106為二極體晶片,晶片的正面與背面的極性相反,並設於第二載板20上,第一晶片104和第二晶片106被絕 緣保護外層40覆蓋,所以第二圖中所示出的二個二極體只是示意出第一晶片104和第二晶片106在引線框架102上的位置。 The second wafer 106 is a diode wafer. The front and back sides of the wafer have opposite polarities and are disposed on the second carrier 20. The first wafer 104 and the second wafer 106 are covered by the insulating protective outer layer 40. The two diodes shown in the figure merely illustrate the position of the first wafer 104 and the second wafer 106 on the lead frame 102.

該第一晶片104和第二晶片106係通過相同的面與載晶板接觸,在第二、三圖所示實施例中,晶片的背面係P型半導體以作為二極體的陽極,而正面係N型半導體以作為二極體的陰極,並在其他實施例中也可以是正面為陽極、背面為陰極,且第一晶片104係通過陽極與載晶板接觸,第二晶片106係陰極通過引線電性連接至第三引腳36,第一晶片104係陽極通過引線電性連接至第二載板20。 The first wafer 104 and the second wafer 106 are in contact with the crystal plate through the same surface. In the embodiment shown in the second and third figures, the back surface of the wafer is a P-type semiconductor as an anode of the diode, and the front side The N-type semiconductor is used as the cathode of the diode, and in other embodiments, the anode is the front side and the cathode is the back surface, and the first wafer 104 is in contact with the crystal plate through the anode, and the second wafer 106 is passed through the cathode. The lead is electrically connected to the third lead 36, and the first wafer 104 is electrically connected to the second carrier 20 through the lead.

該第一引腳32係電性連接至第一載板10上,第二引腳34係電性連接至第二載板20上,並於第一晶片104背離第一載板10之一面係電性連接至第二載板20上,第二晶片106背離第二載板20之一面係電性連接至第三引腳36上。 The first pin 32 is electrically connected to the first carrier 10, and the second pin 34 is electrically connected to the second carrier 20, and the first wafer 104 faces away from the first carrier 10. The second wafer 106 is electrically connected to the third pin 36 from the surface of the second carrier 20 .

該絕緣保護外層40為覆蓋第一晶片104和第二晶片106,請參閱第二圖所示,外露散熱部30不被絕緣保護外層40覆蓋,可以更好地對第一晶片104和第二晶片106進行散熱,並在較佳實施例中,絕緣保護外層40的材質為環氧樹脂絕緣塑膠,可以理解的,在其他實施例中,引線框架102的散熱設計,也可以不採用外露的散熱片,例如載晶板的後背(或者是引線框架102上除了第一引腳32、第二引腳34、第三引腳36外的部分結構)不被絕緣保護外層40包覆,從而能夠直接與外界空氣接觸來進行散熱。 The insulating protective outer layer 40 covers the first wafer 104 and the second wafer 106. Referring to the second figure, the exposed heat sink 30 is not covered by the insulating protective outer layer 40, and the first wafer 104 and the second wafer can be better. The heat dissipation is performed on the insulating protective outer layer 40. It is understood that in other embodiments, the heat dissipation design of the lead frame 102 may not use the exposed heat sink. For example, the back of the crystal plate (or part of the structure of the lead frame 102 except the first pin 32, the second pin 34, and the third pin 36) is not covered by the insulating protective outer layer 40, thereby being able to directly External air contacts to dissipate heat.

請參閱第一圖所示,二個電子元器件100之第一引腳32係相互電性連接以作為單相橋式整流電路之第一直流輸出端,而二個電 子元器件100之第三引腳36係相互電性連接以作為單相橋式整流電路之第二直流輸出端,二個電子元器件100之第二引腳34係分別作為單相橋式整流電路之交流輸入端。 Referring to the first figure, the first pins 32 of the two electronic components 100 are electrically connected to each other as the first DC output terminal of the single-phase bridge rectifier circuit, and the two electronic components 100 The three pins 36 are electrically connected to each other to serve as a second DC output terminal of the single-phase bridge rectifier circuit, and the second pins 34 of the two electronic components 100 are respectively used as AC input terminals of the single-phase bridge rectifier circuit.

然而,上述之單相橋式整流電路為由二個電子元器件100所組成,該電子元器件100自身帶有外露散熱部30(如外露之金屬散熱片),散熱性良好,並優於傳統的由四個整流二極體晶片封裝在一個裝置內形成的單相橋式整流器,第一晶片104和第二晶片106係通過相同的面與載晶板接觸,即都是P型半導體向上或N型半導體向上,因此在封裝時便不需要對晶片進行翻轉,進而達到節省加工程序,節約成本及可提高生產效率之效用。 However, the single-phase bridge rectifier circuit described above is composed of two electronic components 100. The electronic component 100 itself has an exposed heat sink 30 (such as an exposed metal heat sink), which has good heat dissipation and is superior to the conventional one. A single-phase bridge rectifier formed by a rectifying diode chip packaged in a device, the first wafer 104 and the second wafer 106 are in contact with the carrier plate through the same surface, that is, the P-type semiconductor is up or The N-type semiconductor is upward, so there is no need to flip the wafer during packaging, thereby saving the processing procedure, saving cost and improving the efficiency of production.

請參閱第二圖所示,在該實施例中外露散熱部30為開設有鎖固孔41,用於供緊固件(如螺絲)穿過鎖固孔41後將半導體器件固定於其他物體上。 Referring to the second figure, in the embodiment, the exposed heat dissipating portion 30 is provided with a locking hole 41 for fixing a semiconductor device to other objects after the fastener (such as a screw) passes through the locking hole 41.

在一個實施例中電子元器件100之第一晶片104和第二晶片106係取自一片晶圓(Wafer)上相鄰之二個晶片,可以理解的,本技術領域常用的自動化固晶設備從晶圓上拾取晶片(Die),然後放置在引線框架102上進行固晶時,通常都是按晶片在晶圓上的排列順序一個個拾取,因此很容易做到電子元器件100上之二個晶片係取自一片晶圓上相鄰之二個晶片,相對於由四個單獨的整流二極體組成的方案,搭建單相橋式整流器時無法保證各個整流二極體的一致性(因為不同的整流二極體可能來自不同的晶圓上),本發明之橋式整流電路部件所應用的單相橋式整流電路一致性更高,可靠性更好。 In one embodiment, the first wafer 104 and the second wafer 106 of the electronic component 100 are taken from two adjacent wafers on a wafer (wafer). It will be understood that automated die bonding equipment commonly used in the art is When the wafer is picked up on the wafer and then placed on the lead frame 102 for solid crystal bonding, it is usually picked up one by one in the order of the wafers on the wafer, so that it is easy to achieve two on the electronic component 100. The wafer is taken from two adjacent wafers on a wafer. Compared to a scheme consisting of four separate rectifier diodes, the consistency of the rectifier diodes cannot be guaranteed when a single-phase bridge rectifier is built (because different The rectifier diodes may be from different wafers. The single-phase bridge rectifier circuit used in the bridge rectifier circuit component of the present invention has higher consistency and better reliability.

在一個實施例中第一載板10和第二載板20之正投影面積為接近一致,以使得第一載板10對第一晶片104的散熱性能與第二載板20對第二晶片106的散熱性能趨向一致,從而可避免第一晶片104和第二晶片106在單相橋式整流電路工作時溫度不一致,導致電子元器件的特性因溫度不同所產生之差異。 In one embodiment, the front projection areas of the first carrier 10 and the second carrier 20 are nearly uniform, such that the first carrier 10 has a heat dissipation performance for the first wafer 104 and the second carrier 20 to the second wafer 106. The heat dissipation performance tends to be uniform, so that the temperature difference between the first wafer 104 and the second wafer 106 during operation of the single-phase bridge rectifier circuit can be avoided, resulting in a difference in characteristics of the electronic components due to temperature differences.

請搭配參閱第四圖所示,係為本發明應用於三相橋式整流電路之電路原理圖,由圖中可清楚看出,本發明還提供橋式整流電路部件應用的三相橋式整流電路,係包括三個電子元器件100,該電子元器件100可以是前述任一實施例中所述之電子元器件100,三個電子元器件100之第一引腳32係相互電性連接以作為三相橋式整流電路之第一直流輸出端,而三個電子元器件100之第三引腳36係相互電性連接以作為三相橋式整流電路之第二直流輸出端,三個電子元器件100之第二引腳34係分別作為三相橋式整流電路之交流輸入端。 Please refer to the fourth figure, which is a schematic diagram of the circuit applied to the three-phase bridge rectifier circuit. It can be clearly seen from the figure that the invention also provides three-phase bridge rectifier for the application of the bridge rectifier circuit component. The circuit includes three electronic components 100. The electronic component 100 can be the electronic component 100 described in any of the foregoing embodiments. The first pins 32 of the three electronic components 100 are electrically connected to each other. As the first DC output end of the three-phase bridge rectifier circuit, the third pins 36 of the three electronic components 100 are electrically connected to each other to serve as the second DC output terminal of the three-phase bridge rectifier circuit, three The second pin 34 of the electronic component 100 serves as an AC input terminal of the three-phase bridge rectifier circuit, respectively.

然而,上述之三相橋式整流電路為由三個電子元器件100所組成,該電子元器件100自身帶有外露散熱部30(如外露之金屬散熱片),散熱性良好,並優於傳統的由六個整流二極體封裝在一個晶片內形成的三相橋式整流器(功率模組),且第一晶片104和第二晶片106係通過相同的面與載晶板接觸,即都是P型半導體向上或N型半導體向上,因此在封裝時便不需要對晶片進行翻轉,進而達到節省加工程序,節約成本及可提高生產效率之效用。 However, the above-mentioned three-phase bridge rectifier circuit is composed of three electronic components 100, and the electronic component 100 itself has an exposed heat dissipation portion 30 (such as an exposed metal heat sink), which has good heat dissipation and is superior to the conventional one. a three-phase bridge rectifier (power module) formed by a rectifying diode packaged in one wafer, and the first wafer 104 and the second wafer 106 are in contact with the crystal carrying plate through the same surface, that is, The P-type semiconductor is upward or the N-type semiconductor is upward, so that it is not necessary to flip the wafer during packaging, thereby saving the processing procedure, saving cost and improving the efficiency of production.

在一個實施例中電子元器件100之第一晶片104和第二晶片106係取自一片晶圓(Wafer)上相鄰之二個晶片,可以理 解的,本技術領域常用的自動化固晶設備從晶圓上拾取晶片(Die),然後放置在引線框架102上進行固晶時,通常都是按晶片在晶圓上的排列順序一個個拾取,因此很容易做到電子元器件100上之二個晶片係取自一片晶圓上相鄰之二個晶片,相對於由六個單獨的整流二極體組成的方案,搭建三相橋式整流器時無法保證各個整流二極體的一致性(因為不同的整流二極體可能來自不同的晶圓上),本發明之橋式整流電路部件所應用的三相橋式整流電路一致性更高,可靠性更好。 In one embodiment, the first wafer 104 and the second wafer 106 of the electronic component 100 are taken from two adjacent wafers on a wafer (wafer). It will be understood that automated die bonding equipment commonly used in the art is When the wafer is picked up on the wafer and then placed on the lead frame 102 for solid crystal bonding, it is usually picked up one by one in the order of the wafers on the wafer, so that it is easy to achieve two on the electronic component 100. The wafer is taken from two adjacent wafers on a wafer. Compared with the scheme consisting of six separate rectifier diodes, the consistency of the rectifier diodes cannot be guaranteed when the three-phase bridge rectifier is built (because different The rectifier diodes may be from different wafers. The three-phase bridge rectifier circuit used in the bridge rectifier circuit component of the present invention has higher consistency and better reliability.

本發明主要針對橋式整流電路部件所應用的單相和三相橋式整流電路包括直插式之電子元器件100,該電子元器件100包含第一晶片104設於引線框架102之第一載板10上;第二晶片106設於第二載板20上,第一晶片104與第二晶片106通過相同的面與載晶板接觸,引線框架102之第一引腳32與第二引腳34分別電性連接至第一載板10、第二載板20上,第一晶片104背離第一載板10之一面係電性連接至第二載板20上,第二晶片106背離第二載板20之一面係電性連接至第三引腳36上;前述橋式整流電路包括二個或三個電子元器件100之第一引腳32與第三引腳36係分別作為第一、第二直流輸出端,第二引腳34係分別作為交流輸入端,本發明之散熱性良好,可以節省加工程序、成本並提高產品一致性及可靠性。 The single-phase and three-phase bridge rectifier circuit applied to the bridge rectifier circuit component includes an in-line electronic component 100, and the electronic component 100 includes a first chip 104 disposed on the lead frame 102. The second wafer 106 is disposed on the second carrier 20, and the first wafer 104 and the second wafer 106 are in contact with the carrier via the same surface, and the first pin 32 and the second pin of the lead frame 102 34 is electrically connected to the first carrier 10 and the second carrier 20, respectively. The first wafer 104 is electrically connected to the second carrier 20 from the first carrier 10, and the second wafer 106 is separated from the second. One side of the carrier 20 is electrically connected to the third pin 36; the bridge rectifier circuit includes two or three electronic components 100, the first pin 32 and the third pin 36 are respectively used as the first The second DC output terminal and the second pin 34 are respectively used as the AC input terminals, and the heat dissipation of the present invention is good, which can save processing procedures, cost, and improve product consistency and reliability.

上述詳細說明為針對本發明一種較佳之可行實施例說明而已,惟該實施例並非用以限定本發明之申請專利範圍,凡其他未脫離本發明所揭示之技藝精神下所完成之均等變化與修飾變更,均應包含於本發明所涵蓋之專利範圍中。 The detailed description of the present invention is intended to be a preferred embodiment of the present invention, and is not intended to limit the scope of the present invention, and other equivalents and modifications may be made without departing from the spirit of the invention. Changes are intended to be included in the scope of the patents covered by the present invention.

綜上所述,本發明上述之橋式整流電路部件使用時為確實能達到其功效及目的,故本發明誠為一實用性優異之發明,實符合發明專利之申請要件,爰依法提出申請,盼 審委早日賜准本案,以保障發明人之辛苦發明,倘若 鈞局有任何稽疑,請不吝來函指示,發明人定當竭力配合,實感德便。 In summary, the above-mentioned bridge rectifier circuit component of the present invention can achieve its efficacy and purpose when used. Therefore, the invention is an invention with excellent practicability, and is in fact conforming to the application requirements of the invention patent, and submitting an application according to law. I hope that the trial committee will grant this case as soon as possible to protect the inventor's hard work. If there is any doubt in the bureau, please do not hesitate to give instructions, the inventor will try his best to cooperate with him.

Claims (10)

一種橋式整流電路部件,係應用於單相橋式整流電路,該單相橋式整流電路包括直插式之電子元器件,該電子元器件包含:引線框架,係導體材質,包含第一引腳、第二引腳、第三引腳及用於設置晶片的載晶板,該載晶板包含第一載板及與第一載板隔離之第二載板;第一晶片,係二極體晶片,晶片的正面與背面的極性相反,並設於第一載板上;第二晶片,係二極體晶片,晶片的正面與背面的極性相反,並設於第二載板上,第一晶片與第二晶片係通過相同的面與載晶板接觸,第一引腳係電性連接至第一載板上,而第二引腳係電性連接至第二載板上,第一晶片背離第一載板之一面係電性連接至第二載板上,且第二晶片背離第二載板之一面係電性連接至第三引腳上;及絕緣保護外層,係覆蓋第一晶片和第二晶片,並於引線框架除了第一引腳、第二引腳、第三引腳外的部分結構不被絕緣保護外層包覆從而進行散熱;其中,該單相橋式整流電路包括二個電子元器件,二個電子元器件之第一引腳係相互電性連接以作為第一直流輸出端,二個電子元器件之第三引腳係相互電性連接以作為第二直流輸出端,二個電子元器件之第二引腳係分別作為交流輸入端。  A bridge rectifier circuit component is applied to a single-phase bridge rectifier circuit, and the single-phase bridge rectifier circuit comprises an in-line electronic component, the electronic component comprises: a lead frame, a conductor material, and includes a first lead a second pin, a second pin, and a crystal carrying plate for arranging the wafer, the crystal plate includes a first carrier and a second carrier separated from the first carrier; the first chip is a diode The body wafer, the front side and the back side of the wafer have opposite polarities and are disposed on the first carrier board; the second wafer is a diode chip, and the front and back sides of the wafer have opposite polarities and are disposed on the second carrier board, The first lead is electrically connected to the first carrier, and the second lead is electrically connected to the second carrier, and the second lead is electrically connected to the second carrier. The surface of the wafer facing away from the first carrier is electrically connected to the second carrier, and the surface of the second wafer facing away from the second carrier is electrically connected to the third pin; and the outer layer of the insulating protection covers the first a wafer and a second wafer, and in the lead frame except the first pin, the second pin, The three-pin outer portion structure is not covered by the insulating protective outer layer for heat dissipation; wherein the single-phase bridge rectifier circuit includes two electronic components, and the first pins of the two electronic components are electrically connected to each other. As the first DC output end, the third pins of the two electronic components are electrically connected to each other as the second DC output terminal, and the second pin of the two electronic components are respectively used as the AC input terminals.   如申請專利範圍第1項所述之橋式整流電路部件,其中該引線框架包含不被絕緣保護外層覆蓋之外露散熱部。  The bridge rectifier circuit component of claim 1, wherein the lead frame comprises an exposed heat dissipation portion that is not covered by the insulating protective outer layer.   如申請專利範圍第1項所述之橋式整流電路部件,其中該第一晶片和第二晶片係通過陽極與載晶板接觸,第二晶片係陰極通過引線電性連接至第三引腳,第一晶片係陰極通過引線電性連接至第二載板。  The bridge rectifier circuit component of claim 1, wherein the first wafer and the second wafer are in contact with the crystal plate through the anode, and the second wafer is electrically connected to the third pin through the lead. The first wafer system cathode is electrically connected to the second carrier via a lead.   如申請專利範圍第1項所述之橋式整流電路部件,其中該電子元器件之第一晶片和第二晶片係取自一片晶圓上相鄰之二個晶片。  The bridge rectifier circuit component of claim 1, wherein the first and second wafers of the electronic component are taken from two adjacent wafers on a wafer.   如申請專利範圍第1項所述之橋式整流電路部件,其中該第一載板和第二載板之正投影面積接近一致,以使得第一載板對第一晶片的散熱性能與第二載板對第二晶片的散熱性能趨向一致。  The bridge rectifier circuit component of claim 1, wherein the front projection areas of the first carrier and the second carrier are nearly uniform, so that the first carrier has heat dissipation performance to the first wafer and the second The heat dissipation performance of the carrier to the second wafer tends to be uniform.   一種橋式整流電路部件,係應用於三相橋式整流電路,該三相橋式整流電路包括直插式之電子元器件,該電子元器件包含:引線框架,係導體材質,包含第一引腳、第二引腳、第三引腳及用於設置晶片的載晶板,該載晶板包含第一載板及與第一載板隔離之第二載板;第一晶片,係二極體晶片,晶片的正面與背面的極性相反,並設於第一載板上;第二晶片,係二極體晶片,晶片的正面與背面的極性相反,並設於第二載板上,第一晶片與第二晶片係通過相同的面與載晶板接觸,第一引腳係電性連接至第一載板上,而第二引腳係電性連接至第二載板上,第一晶片背離第一載板之一面係電性連接至第二載板上,且第二晶片背離第二載板之一面係電性連接至第三引腳上;及絕緣保護外層,係覆蓋第一晶片和第二晶片,並於引線框架除了第一引腳、第二引腳、第三引腳外的部分結構不被絕緣保護外層包覆從而 進行散熱;其中,該三相橋式整流電路包括三個電子元器件,三個電子元器件之第一引腳係相互電性連接以作為第一直流輸出端,三個電子元器件之第三引腳係相互電性連接以作為第二直流輸出端,三個電子元器件之第二引腳係分別作為交流輸入端。  A bridge rectifier circuit component is applied to a three-phase bridge rectifier circuit, the three-phase bridge rectifier circuit comprises a direct insertion type electronic component, the electronic component comprises: a lead frame, a conductor material, and includes a first lead a second pin, a second pin, and a crystal carrying plate for arranging the wafer, the crystal plate includes a first carrier and a second carrier separated from the first carrier; the first chip is a diode The body wafer, the front side and the back side of the wafer have opposite polarities and are disposed on the first carrier board; the second wafer is a diode chip, and the front and back sides of the wafer have opposite polarities and are disposed on the second carrier board, The first lead is electrically connected to the first carrier, and the second lead is electrically connected to the second carrier, and the second lead is electrically connected to the second carrier. The surface of the wafer facing away from the first carrier is electrically connected to the second carrier, and the surface of the second wafer facing away from the second carrier is electrically connected to the third pin; and the outer layer of the insulating protection covers the first a wafer and a second wafer, and in the lead frame except the first pin, the second pin, The three-pin outer portion structure is not covered by the insulating protective layer for heat dissipation; wherein the three-phase bridge rectifier circuit includes three electronic components, and the first pins of the three electronic components are electrically connected to each other As the first DC output terminal, the third pins of the three electronic components are electrically connected to each other as the second DC output terminal, and the second pin of the three electronic components are respectively used as the AC input terminals.   如申請專利範圍第6項所述之橋式整流電路部件,其中該引線框架包含不被絕緣保護外層覆蓋之外露散熱部。  The bridge rectifier circuit component of claim 6, wherein the lead frame comprises an exposed heat sink that is not covered by the insulating protective outer layer.   如申請專利範圍第6項所述之橋式整流電路部件,其中該第一晶片和第二晶片係通過陽極與載晶板接觸,第二晶片係陰極通過引線電性連接至第三引腳,第一晶片係陰極通過引線電性連接至第二載板。  The bridge rectifier circuit component of claim 6, wherein the first wafer and the second wafer are in contact with the crystal plate through the anode, and the second wafer is electrically connected to the third pin through the lead. The first wafer system cathode is electrically connected to the second carrier via a lead.   如申請專利範圍第6項所述之橋式整流電路部件,其中該電子元器件之第一晶片和第二晶片係取自一片晶圓上相鄰之二個晶片。  The bridge rectifier circuit component of claim 6, wherein the first and second wafers of the electronic component are taken from two adjacent wafers on a wafer.   如申請專利範圍第6項所述之橋式整流電路部件,其中該第一載板和第二載板之正投影面積接近一致,以使得第一載板對第一晶片的散熱性能與第二載板對第二晶片的散熱性能趨向一致。  The bridge rectifier circuit component of claim 6, wherein the front projection areas of the first carrier and the second carrier are nearly uniform, so that the first carrier has heat dissipation performance to the first wafer and the second The heat dissipation performance of the carrier to the second wafer tends to be uniform.  
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