M286458 八、新型說明： 【新型所屬之技術領域】 本創作有關一種半導體封裝結構，特別是一種具有 咼散熱效率之發光二極體（Light Emitting Diode，LED )封 裝結構。 【先前技術】M286458 VIII. New Description: [New Technology Field] This creation relates to a semiconductor package structure, in particular to a Light Emitting Diode (LED) package structure with heat dissipation efficiency. [Prior Art]
以發光二極體（Light Emitting Diode，LED )為應用光 源之消費性電子產品已擴充至背光模組、車燈、投影機 冬在發光效率、產品壽命及應用模式需求增加下，高 亮度與高效率之功率型LED成為LED的發展趨勢。 矹抚向發光效率而言，一般LED製造廠商即著手 提高光電轉換效率或加大LED功率，由於LED晶片輸 入功率不斷提高，而高功率（Highp〇wer)LED所衍生的 熱量累積問題將導致晶片發光效率與壽命的嚴重劣 =如f LED封裝體單位面積輸出光通量的因素包含 置子效率、晶片尺寸（發光面積）、輸入功率與封裳體之 散熱能力等。為了轉晶片具有穩定的發光效率，由發 發散出的熱量必須快速地排出封裝體。若封 無法消散（Dissipati〇nU古此刼田人 衣假 成材料會因為彼此間胺 種、、’ 封，职m '膜係數的不同而有導線斷裂或 封裝膠材頁化等可靠声 著溫产的上弁Η 曰粒的發光效率更會隨 者度的上升而有明顯地下降，卄、皮少甘士人 卜降並xe成其哥命明顯地縮 6 M286458 短與波長、順向電壓（Vf)飄移等現象。 為了解決高功率LED散熱的問題，美國第6274924 號專利案提出了表面黏著LED .封裝結構（如_ mountableLEDpackage) ’ 924案係提出了將晶片直接黏著 在散熱墊上，使熱量由下方導出至外加之散熱塊上，似 案透過配置在晶片下方之散熱塊進行散熱，而封裝之社 構體是用組裝方式再與散熱塊接合1而這樣的做法將 會改變原有之封裝作業流程，而其將散熱塊設置於晶片 之下方’在貫際應用於產品（如車燈）上，其與車燈電 路板的組裝位置，仍需考量實際的配置空間：：或：實 際應用的產品可以提供配置空間，然而實際應用產品二 下方通常空《較為狹卩益，其亦無法提供較充分的執交 換介質（空氣），使其散熱效率仍受到限制，因而似 案提出在晶片下方結合散熱塊之設計，在實際應用於產 品上時，仍有許多的問題存在。 【創作内容】 η力率LED的政熱問題為提高發光效率及口鸟 命最重要的問題，目前雖已有提出利用散熱塊結合= 片下方進行熱交換的設計，然而上述所揭露之專利案: 具體貫現仍有大幅改變封裝製程，應用產品植裝 以及散熱效率不佳等問題，是以，本新型提出卜種\ 散熱效率的高功率光電半導體封裝結構。 " M286458 根據本創作所揭露之半導體封裝結構，其包括有一 基板至夕一半導體晶片、至少二導電引線、至少二導 電片 熱傳導體、-封裝體及-散熱塊’其中熱傳導 體係：置於基板上’半導體晶片直接設置於熱傳導體 曰‘電引線電性連接至導電片，而封裝體包覆住半導 =晶片，散熱塊則結合於熱傳導體上，使得半導體晶片 V電後所產生之熱能透過熱傳導體傳遞至散熱塊上 行熱交換。 根據本創作所揭露之半導體封裝結構，其中半導體 晶片直接設置在基板上之熱料體上，錢散熱塊結合 於熱傳導體上進行熱傳遞及熱交換，因散熱塊設置在基 ㈣上方’在與實際應用產品組裝時，其配置空間較不 又到限制且位在基板上方之散熱塊能夠有效地進行 熱f換’而提高散熱效率，而成為半導體封裝結構之最 佳设計。 ，有關本創作的特徵與實作，兹配合圖示作最佳實施 例詳細說明如下。 【實施方式】 據本創作所揭露之半導體封裝結構，其中所應用 的、> V體日日片係為如發光二極體（[刷㈣也叩 一、4 e [ED)、半導體雷射（LaserDi〇de，lD)等之光電 、…、體而在以下本創作的詳細說明中，將以應用於發 M286458 光二極體做為本創作之最佳實施例。 凊參閱「第1、9 〇 θ 之半導以 目」所^ ’㈣本創作所揭露 ^體封裝結構，其包括有一基才反η、_ 12、至少—半導體晶^、至少二㈣引線⑷體 採用：柄：體12係設置於基板11上，熱傳導體12係 =如銅#具有高熱傳導係數的材質，半導體晶片Μ 係直接設置於熱傳導體12中央位置處，導電引線⑷、 142分別一端電性連接至半導體晶片13的兩侧，另— 端則電性連接錢置在基板11下方之兩導電片161、 162’·續而將封裝#15包覆住半導體晶片13，散熱塊 17則透過共晶製程（Euteetie)、焊接㈤加―）或是 高熱傳導接著劑（HighconductivityAdhesi〇n)等结合 ，段固定於熱傳導體12上，散熱塊17並可以根據散熱 效率之需求’於散熱塊17上可以設計出不同形狀、不 同數量的散熱鰭片171。 因此當半導體晶片13透過導電片161、162與導電 引線141、142導電後’其工作所產生之熱能透過熱傳 導體12傳遞至政熱塊17上進行熱交換，透過散熱塊 17位於基板U上方之設計，配置空間較不受到限制， 且能夠有效地對半導體晶片13所產生之熱能進行散 熱，如應用於發光二極體等之光電半導體，其可有效提 M286458 延長使 昇發光效率，並防止封裝體15因离 口冋溫而黃化 用哥命。 一如第4A、4B圖」所示，圖中所示係為本 二貫施例，其t散熱塊對應半導體晶片n -圓錐面而形成一光反射部172，光反射部⑺：： 可以塗佈或黏著等技術而形成一鏡㈣η"，因而:、 以根據不同的發光需求’設計出光反射；Μ之二可 二::#半/Γ晶片13所產生之光線可以透過光反射部 172來使光線集中或使光線散射。 如「第5圖」所示，圖中所示係為本創作第三 =’其中於基板U上設置有複數導熱柱18，導敎柱U 二越過基板η而與熱傳導體12接觸，因而亦可於基板 ⑼的下方設置第二散熱塊19，以根據散㈣求而增加 放熱面積，提昇散熱效率。 雖然本創作以前述之較佳實施例揭露如1，然其並 =以限定本創作，任何熟習相關技藝者，在不脫離本 ★之精神和範圍内，當可作些許之更動與潤飾，因此 士創作之專利保護範圍須視本說明書所附之申請專利 範圍所界定者為準。 【圖式簡單說明】 囷係為本創作第一實施例之結構組成分解示 M286458 弟2圖 意圖； ，係為本創作第一實 施例之結構組成組合 第3圖， 意圖； 係為本創作第-實施例之結構組成剖面示 苐4A、4B圖 示意圖；及 ’係為本創作第二實施例之結構組成 弟5圖，係為本創作筮-每^ 主要貫施例之結構組成示意圖 土罟兀件付號說明】 11 基板 12 熱傳導體 13 半導體晶片 141 、 142 導電引線 15 封裝體 161 、 162 導電片 17 散熱塊 171 散熱鰭片 172 光反射部 1721 鏡面層 18 導熱柱 19 第二散熱塊 11Consumer electronics products using Light Emitting Diodes (LEDs) as application light sources have been extended to backlight modules, lamps, and projectors. In the winter, luminous efficiency, product life and application mode demand increase, high brightness and high The efficiency of power LED has become the development trend of LED. In terms of luminous efficiency, general LED manufacturers are beginning to increase the photoelectric conversion efficiency or increase the LED power. As the input power of LED chips continues to increase, the heat accumulation problem caused by high-power LEDs will lead to wafers. Difficulty in luminous efficiency and longevity = factors such as the output luminous flux per unit area of the LED package include the efficiency of the placement, the size of the wafer (light-emitting area), the input power, and the heat dissipation capability of the body. In order for the wafer to have a stable luminous efficiency, the heat dissipated by the emission must be quickly discharged out of the package. If the seal can not be dissipated (Dissipati〇nU ancient 刼田人衣假成材料 will have a reliable sound temperature due to the difference in the amine species, 'sealing, job m' membrane coefficient, etc. The luminous efficiency of the sputum produced by the sputum is significantly reduced with the increase of the degree. The sputum, the skin, the lesser, the scorpion, and the xe, the sacredness of the scorpion, is significantly reduced. 6 M286458 Short and wavelength, forward voltage (Vf In order to solve the problem of high-power LED heat dissipation, U.S. Patent No. 6,274,924 proposes a surface-adhesive LED. The package structure (such as _mountableLEDpackage) '924 case proposes to directly attach the wafer to the heat-dissipating pad to make heat The lower part is exported to the external heat sink block, and the heat sink is arranged to dissipate heat through the heat sink block disposed under the wafer, and the packaged social body is assembled and connected with the heat sink block. This will change the original package operation. The process, while the heat sink is placed under the wafer' is applied to the product (such as the lamp), and the assembly position with the lamp circuit board still needs to consider the actual configuration space: Or: the actual application of the product can provide the configuration space, but the actual application product 2 is usually empty, which is relatively narrow and beneficial, and it can not provide a sufficient exchange medium (air), so that the heat dissipation efficiency is still limited, so it seems like It is proposed that the design of the heat sink block is combined under the wafer. When it is actually applied to the product, there are still many problems. [Creation content] The political heat problem of the η force rate LED is the most important problem to improve the luminous efficiency and the life of the bird. At present, there has been a proposal to use heat sink block combination = heat exchange under the sheet. However, the above-mentioned disclosed patents: There are still significant changes in the packaging process, application of planting, and poor heat dissipation efficiency. The present invention proposes a high-power optoelectronic semiconductor package structure of heat dissipation efficiency. " M286458 The semiconductor package structure disclosed in the present invention comprises a substrate to a semiconductor wafer, at least two conductive leads, and at least two conductive sheets for heat conduction. Body, package and heat sink block where heat transfer system: placed on the substrate 'semiconductor The film is directly disposed on the heat conducting body, the electrical lead is electrically connected to the conductive sheet, and the package covers the semiconductor wafer=the heat sink is bonded to the heat conducting body, so that the heat generated by the semiconductor wafer V is transmitted through the heat conducting body. According to the semiconductor package structure disclosed in the present invention, the semiconductor wafer is directly disposed on the hot material on the substrate, and the heat dissipation block is combined with the heat conductor for heat transfer and heat exchange, due to the heat sink It is disposed above the base (4). When assembled with the actual application product, the configuration space is less limited and the heat sink block located above the substrate can effectively perform heat-fitting to improve heat dissipation efficiency, and become the most semiconductor package structure. Good design. The features and implementations of this creation are described in detail below with reference to the preferred embodiment. [Embodiment] According to the semiconductor package structure disclosed in the present invention, the V-body day film used in the present invention is, for example, a light-emitting diode ([Brush (4), 4 e [ED], semiconductor laser) (LaserDi〇de, lD) and other optoelectronics, ..., and in the following detailed description of this creation, will be applied to the M286458 optical diode as the best embodiment of the creation.凊 Refer to “Parts 1 and 9 〇 θ 以 以 」 」 ^ ( ( ( ( ( ( ( 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本The body adopts: a handle: the body 12 is disposed on the substrate 11, and the thermal conductor 12 is a material having a high thermal conductivity such as copper. The semiconductor wafer is directly disposed at the center of the thermal conductor 12, and one end of the conductive leads (4) and 142 are respectively Electrically connected to both sides of the semiconductor wafer 13, the other end is electrically connected to the two conductive sheets 161, 162' placed under the substrate 11, and the package #15 is covered with the semiconductor wafer 13, and the heat sink 17 is Through the combination of Euteetie, welding (5) plus -) or high heat conduction adhesive (Highconductivity Adhesi〇n), the segment is fixed on the thermal conductor 12, and the heat dissipating block 17 can be disposed on the heat dissipating block 17 according to the heat dissipation efficiency. Different shapes and different numbers of heat dissipation fins 171 can be designed. Therefore, when the semiconductor wafer 13 is electrically conducted through the conductive sheets 161 and 162 and the conductive leads 141 and 142, the heat generated by the operation of the semiconductor wafer 13 is transmitted to the thermal block 17 through the heat conductor 12 for heat exchange, and the heat dissipation block 17 is located above the substrate U. The design and the configuration space are relatively unrestricted, and the heat energy generated by the semiconductor wafer 13 can be effectively dissipated, such as an optoelectronic semiconductor applied to a light-emitting diode, etc., which can effectively improve the luminous efficiency of the M286458 and prevent packaging. The body 15 is yellowed by the stagnation of the mouth. As shown in Fig. 4A and Fig. 4B, the figure shows a two-part embodiment in which the t heat sink block forms a light reflecting portion 172 corresponding to the semiconductor wafer n-conical surface, and the light reflecting portion (7): can be coated A technique such as cloth or adhesion forms a mirror (four) η ", thus: to design a light reflection according to different lighting requirements; Μ二二二::#The light generated by the half/Γ wafer 13 can pass through the light reflecting portion 172. Focus or scatter light. As shown in the "figure 5", the figure shows that the third part of the creation is that the plurality of thermally conductive columns 18 are disposed on the substrate U, and the guide post U is in contact with the thermal conductor 12 across the substrate η. A second heat dissipation block 19 may be disposed under the substrate (9) to increase the heat release area according to the dispersion (four), thereby improving heat dissipation efficiency. Although the present invention has been disclosed in the foregoing preferred embodiments as in the above, it is intended to limit the present invention, and anyone skilled in the art can make some changes and refinements without departing from the spirit and scope of the present invention. The scope of patent protection shall be subject to the definition of the scope of the patent application attached to this specification. [Simple diagram of the diagram] The structure of the first embodiment of the creation is shown in the decomposition of the structure of the M286458 brother 2, which is the structure of the first embodiment of the creation of the composition of the third figure, the intention; - The structural composition of the embodiment is shown in a schematic diagram of FIG. 4A and FIG. 4B; and the structure of the second embodiment of the second embodiment is shown in FIG. 5, which is a schematic diagram of the structure of the composition of the present invention.付 付 】 11 11 11 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12 12