TWM281297U - High-power LED chip - Google Patents

Description

(1)M281297 化 位 接 效 發 丨主 的 製 0 射 聚 之 、創作說明 新型所 本創 物布拉 置，並 ’使得 提高發 光二極 先前技 按， 要包括 介電層 溝渠D 作。然 〜3 〇 的問題 本創 光效果 功效的 以提供 屬之技術 作係有關 格反射鏡 與P層布 本創作具 光效率之 體晶片或 術】 習用之高 • 一遙晶 c，該布 發射出光 傳統之高 度’易發 ，乃為其 作人有鑑 佳，且具 而功率發 消費大眾 領域】 (=咼功率發光二極體晶片，藉由將氧 B R )，設於介電層所挖成之溝渠 格反射鏡（D B R )的歐姆接觸層連 古集中聚光、且可選擇發光光源，可有 二功率發光二極體晶片，適用於高功率 類似結構者。 手 功率發光二 層A、一布 拉袼反射鏡 線，藉以完 功率發光二 生發光均勻 最主要之缺 於上述缺失 有提高發光 光二極體晶 使用，為本 極體晶 拉格反 (D B 成高功 極體晶 性較難 失者。 ’期能 效率， 片，乃 創作所 片，如第1 射鏡（D B R ) B藉由 率發光二極 片的發光角 控制，造成 提供一種發 使發光角變 潛心研思、 欲研創之倉j 有 用 新型内容】 曰本創作之主要 提高發光效率， 性及便利性者 圖所示， R ) B及 介電層C 體晶片的 度約為2 了光子散 光均勻、 乍及渡波 設計組製 作動機者 I係在使高功率發光二極髀曰 使發光角變窄月M、走、Λ/ 晶片具 Θ文乍及具濾波之功致， 旎有實(1) M281297 Positioning effect development 丨 Master's system 0 Shooting concentrator, creative description New type of original creation, and ‘enhance the light emitting diode ’s previous technology, including the dielectric layer trench D’. However, the problem of ~ 30 is based on the technical effect of the original light effect. It is related to the grid mirror and the P layer cloth. The light-efficient body chip or technique is used.] Highly used • A remote crystal c, the cloth emits The height of the light-emitting tradition is easy to produce, which is a good example for the people, and has the power to consume the public field] (= 咼 Power light-emitting diode chip, by digging the oxygen BR), which is dug in the dielectric layer The ohmic contact layer of the Cheng's Ditch Grid Reflector (DBR) condenses the light and can choose a light source. It can have a two-power light-emitting diode chip, which is suitable for high-power similar structures. The hand-powered light-emitting two-layer A and one Brass mirror line, in order to complete the power of light-emitting two-phase uniform light emission. The main deficiency is that the above-mentioned lack of enhanced light-emitting diodes is used. Those with high power poles are more difficult to lose. 'Periodic energy efficiency, film, is the film created, such as the first lens (DBR) B through the light emitting angle of the light emitting diode control, resulting in a kind of light emitting Angular change is concentrating on thinking and wanting to create a warehouse. Useful new content] As shown in the figure, the main purpose of this book is to improve the luminous efficiency, convenience, and convenience. The degree of R) B and the dielectric layer C bulk chip is about 2 photons. The astigmatism uniformity, and the motivation of the design team of the wave design team I is to make the high-power light-emitting diodes narrow the luminous angle. M, go, Λ / chip with Θ Wencha and filter function, there is no real

第5 1 M281297 四、創作說明（2) 本創作之 有選擇光源發 為達上述 體晶片’係包 歐姆接觸層、 R )。該P層 介電層係全部 觸層上成長， 電層中所挖成 ，係設於介 射鏡（D B R 高發光效率、 本創作之 詳細說明中， [實施方式】 請參第2 體晶片，主要 B R ) 14、 >氧化物布拉格 有磊晶層1 Q 拉格反射鏡（ 2 、多層量 3及p層布 ‘ef lectors) 次要目的， 光之高功率 目的，本創 含有基板、 介電層、電 布拉格反射 設於P層布 且該介電層 之溝渠處， 電層所挖成 )的歐姆接 發光角變窄 其他特點及 進一步瞭解 乃具有 發光二 作主要 P層布 極及氧 鏡（D 拉格反 係挖成 吕亥氧化 之溝渠 觸層連 及濾波 具體實 發光均 極體晶 係設一 拉袼反 化物布 B R ) 射鏡（ 一溝渠 物布拉 位置， 接，藉 之功效 施例可 勻、聚 片者。 種高功 射鏡（ 拉袼反 設於磊 D B R ，而電 格反射 並與P 此，雙 者。 於以下 光效果及可 率發光二極 D B R )、 射鏡（D B 晶層内部， )的歐姆接 極係設於介 鏡（D B R 層布拉格反 重共振以提 配合附圖之 〕3圖所示’本創作係一種高功率發光二極 係包括有基板1 i 、P層布拉格反射鏡（D 歐姆接觸層1 5 、介電層20、電極22及 反射鏡（D B R ) 3 0。該基板1 1上係設 ’該磊晶層1 〇係由下而上依序設有N層布 ^ B R ? Distributed Bragg Reflectors) 子井（MQW ， Multiple Quantum Well) 拍1 袼反射鏡（D B R ’ Distributed Bragg 1 4 。而蠢晶層i 〇内所含n層布拉格反射Section 5 1 M281297 IV. Creation Instructions (2) The selective light source for this creation is to reach the above-mentioned body wafer 'system including ohmic contact layer, R). The P-layer dielectric layer is grown on all the contact layers. The excavated layer is located in the dielectric mirror (DBR high luminous efficiency, detailed description of this creation, [Embodiment] Please refer to the second body chip, Main BR) 14, > oxide Bragg has epitaxial layer 1 Q rag mirror (2, multilayer amount 3 and p-layer cloth 'ef lectors) secondary purpose, high power purpose of light, the original contains a substrate, dielectric The electric layer and the electric Bragg reflection are provided on the P layer cloth and the dielectric layer has a trench. The ohmic connection has a narrower light emitting angle. Other characteristics and further understanding are that the light emitting layer is used as the main P layer cloth and oxygen Mirror (D Lagger reaction system dug into Lu Hai oxidation channel contact layer and filtering concrete solid light emitting homogeneous crystal system with a pull-up anti-reflection cloth BR) Efficacy examples can be uniform, film collectors. A kind of high-powered mirror (the pull is reversed to Lei DBR, and the grid reflects and P, both. The following light effects and the rate of light-emitting diode DBR), The ohmic electrode of the mirror (inside the DB crystal layer) is set at Dielectric mirror (DBR layer Bragg anti-resonance to match the drawing) 3) 'This creative system is a high-power light-emitting diode system including a substrate 1 i and a P-layer Bragg reflector (D ohmic contact layer 1 5, The dielectric layer 20, the electrode 22, and the reflector (DBR) 30. The substrate 11 is provided with 'the epitaxial layer 10', and N layers of cloth are sequentially arranged from bottom to top ^ BR? Distributed Bragg Reflectors) Well (MQW, Multiple Quantum Well) shot 1 chirped mirror (DBR 'Distributed Bragg 1 4. And the n-layer Bragg reflection contained in the stupid crystal layer i 〇

M281297 四、創作說明（3) 鏡（D B R ) J 2 及 為對數層以上，日，P層布拉格反射鏡（D B R )〗4 Μ布拉格反射鏡拉格反射鏡（…）"及 V族元素所組成之化人R ) 1 4係由元素週期表瓜族及 :1 4上設有歐姆接‘ ：：P層布拉格反射鏡（D B R 數的砷化鋁鎵/砷化曰」，该P層為發光層，係為對 ’ P層布拉格反射、(二G a A s / A i A s )結構 射率約為7 5 % = ) 1 4之對數為8對，其反 出來的光會有擴展的】” m光的選擇性較低。所發 、外部量子效應、心:子：二,大大的降低了發光功率 件反應的速度。該N;=:Sf與頻寬’ t因此降低了元 1 A s )結構"亥：ΐ i 砷（A 1 G a “ / A 數為3 2胃，其；射：：=射鏡（DBR) 1 2之對 =6 5 〇 nm的光子可有 2擇：代表所有發光頻M281297 IV. Creation instructions (3) Mirror (DBR) J 2 and above are logarithmic, P-layer Bragg reflector (DBR) 4M Bragg reflector Lager mirror (...) " The composition of the person R) 1 4 is composed of the melon family of the periodic table and: 1 4 is provided with an ohmic connection ':: P-layer Bragg reflector (DBR number of aluminum gallium arsenide / arsenide), the P layer is The light-emitting layer is a reflection of the 'P-layer Bragg, and the emissivity of the structure (two GaAs / AiAs) is about 75% =) The logarithm of 1 is 8 pairs, and the reflected light will expand. The selectivity of m-light is low. The emission, external quantum effects, and core: sub: two greatly reduce the response speed of the light-emitting power element. The N; =: Sf and bandwidth 't therefore reduce the element 1 A s) structure " Hai: ΐ i arsenic (A 1 G a "/ A number is 3 2 stomach, which; shot: = = mirror (DBR) 1 2 pairs = 6 5 0 nm photons may have 2 Choice: Represents all luminous frequencies

E D多出在發光層 k擇並反射。比傳統L ，光層上方的半透明铲面:此率鏡面（Mirror)以及在 高低折射率相間的分；型布2 :鏡面是利用週期性排列且 成’同時在上下層：二：鏡：！ B R )結構所 層在共振腔中所形成沾伞备目二形成一個共振腔，且活性 象。若直接調整D β 二1建，性與破壞性的干涉現 共振的條件，可達到 =，微調共振腔長度來控制 發光功率。 乂、、、’ D更高的外部量子效率及E D is more selected and reflected in the light emitting layer k. Than the traditional L, the translucent shovel surface above the light layer: this rate mirror surface (Mirror) and the difference between high and low refractive index; type cloth 2: the mirror surface is periodically arranged and formed at the same time in the upper and lower layers: two: mirror: !! (B R) The layer formed in the resonant cavity of the structure layer forms a resonant cavity and has an active image. If you directly adjust the D β 2 1 build, the conditions for sexual and destructive interference to reach resonance can be reached, and the length of the resonant cavity can be fine-tuned to control the luminous power.更高 ,,, ’’ higher external quantum efficiency and

"電層2 0 ’係全部設於p層布拉格反射鏡（D B R M281297" Electrical layer 2 0 ’are all set in p-layer Bragg reflectors (D B R M281297

四、創作說明（4) 1 4的歐姆接觸層 工^ 1 ’而電極2 2 ϋί介以電層2 0係挖成 “以打::;;;：？。局部溝以：：; = 乳化物布拉格反射鏡（D β 化矽/氮化矽之交替薄獏結 ^ 3 〇係為對數的二氧 DBR)3〇係選自SiJ 、 D".乳化物布拉格反射鏡（ 〇 2、B a F 2、τ a 2 〇 5所;艾 1 3 N 4、T i 〇 2、η f 布拉格反射鏡（D B R ) 3 伤」、'且成之氧化物，而氧化物 Γ21位置，並與ρ層布層20所挖成之 接，該氧化物布拉格反射鏡（=鏡（D B R ) i 4連 :各反：鏡（DBR) 14的歐姆接觸層布拉 達到 = : = :以 BR)30" 二上再成長氧化物布拉格反以=鏡(= =升對6 5 0 nm光子的選擇性。 藉由上述之結構，構成_猫古 a 請參第9 q回匕 菁成種回功率發光二極體晶片，Fourth, the creation instructions (4) 1 4 of the ohmic contact layer ^ 1 ', and the electrode 2 2 ϋ 介 dielectric layer 20 is dug into "以 打 :: ;;;;:?. Local grooves ::; = emulsification Object Bragg Mirror (Alternating Thin Junction of D β Siliconized Silicon / Silicon Nitride ^ 3 〇 is a logarithmic dioxy DBR) 30 is selected from SiJ, D ". Emulsified Bragg Mirror (〇2, B a F2, τa 2 〇5; Ai 1 3 N 4, T i 〇2, η f Bragg reflector (DBR) 3 damage ", and the oxide formed, and the oxide Γ21 position, and the ρ layer Digged by cloth layer 20, the oxide Bragg mirror (= mirror (DBR) i 4th connection: each counter: mirror (DBR) 14 ohmic contact layer Brad ===: to BR) 30 " Re-growth of the oxide on the Bragg inverse mirror = (mirror selectivity to 6 50 nm photons. With the above-mentioned structure, constitute _ cat ancient a, please refer to the 9th q back to the power of the light emitting diode Body chip,

格反射铲：2:了’本創作之特點係在於該氧化物布拉 B R ) Γ 3 0係成長於P層布拉格反射鏡（D 溝^) 4的歐姆接觸層上，並設於介電層2 〇所挖成之 約1 η #位置，藉以使具有提高發光效率，該發光角變窄 選擇2 t及遽波之功效，且可具有發光均勻、聚光及可有 片。，原發光等效果，進而形成一種高功率發光二極體晶Grid reflection shovel: 2: I'm the characteristic of this creation is that the oxide Bra BR) Γ 3 0 is grown on the ohmic contact layer of the P-layer Bragg reflector (D groove ^) 4 and is set on the dielectric layer The position of about 1 η # excavated by 20 has the effect of improving luminous efficiency, narrowing the luminous angle and selecting the effect of 2 t and chirp wave, and can have uniform luminescence, condensing and may have a sheet. , Original luminescence and other effects, and then form a high-power light-emitting diode crystal

M281297 四、創作說明（5) 請參第4圖所示 片，該介電層20中 常數的特性，因此可 ，提高元件反應的速 )3 0之發光係以微 離子#刻的方式餘刻 )3 0 ，最後將晶片 能均勻且有聚光效果 惟以上所述者， 以限定本創作可實施 作變化與修飾，皆應 綜上所述，本創 創作具有提高發光效 效，具有實用價值無 ，本創作係 所引入的介 作為絕緣層 率。該氧化 影技術來定 部份的氧化 4 0藉以拋 0 僅為本創作 之範圍，凡 視為不悖離 作確可達到 率、發光角 疑，爰依法 體 曰曰 種高功率發光 電質因具有絕緣與低介電 並有效的降低事聯電容值 物布拉格反射鏡（D B R 義發光區3 1 ，並以活性 物布拉格反射鏡（D B R 光方式來磨薄，而使發光 之較佳實施例，當不能用 習於本業之人士所明顯可 本創作之實質内容。 創作之預期目的，提供本 變窄約1 0度及濾波之功 提出新型專利申請。 ΦM281297 4. Creation instructions (5) Please refer to the sheet shown in Figure 4. The constant characteristics of the dielectric layer 20 can improve the response speed of the device.) 3 The light-emitting system is engraved with micro-ion #etching. ) 3 0, finally, the wafer can be uniform and has a light-concentrating effect, but the above-mentioned ones, to limit the creation can be implemented to make changes and modifications, all should be summarized above. The original creation has improved luminous efficacy and has practical value. No, the dielectric introduced in this creative department serves as the insulation layer rate. The oxidation shadow technology is used to determine the partial oxidation of 4 0, and throwing 0 is only the scope of this creation. Anyone who does not deviate from the work can really achieve the rate, the light emitting angle is doubtful, according to the legal system, it is a kind of high-power light-emitting electric quality factor. The preferred embodiment is an insulation Bragg reflector (DBR light-emitting area 3 1) which effectively reduces the capacitance of the event, and is thinned with an active Bragg reflector (DBR light), so that it emits light. When it is impossible to use the essential content of this creation as apparent to those who are accustomed to the industry. The intended purpose of the creation is to provide a new patent application by narrowing down about 10 degrees and filtering the power. Φ

第9頁 M281297 圖式簡單說明 【圖式簡單說明】 第1圖係為習用高功率發 第2圖係為本創作實施^ 二極體晶片之剖面示意圖 第3圖係為本創作^:例2 =體外觀圖。 第4圖係為本創作實施例之體分解圖。 【主要元件符號說明】 〇丨面不意圖。 1 0 、蠢晶層 1 1、基板Page 9 M281297 Schematic illustration [Schematic description] Figure 1 is a conventional high-power hair. Figure 2 is a schematic diagram of the implementation of a diode chip. Figure 3 is a schematic diagram of a diode chip. ^: Example 2 = Body appearance. Figure 4 is an exploded view of this creative embodiment. [Description of main component symbols] 〇 丨 It is not intended. 1 0, stupid crystal layer 1 1, substrate

Distributed BraggDistributed Bragg

1 2、N層布拉格反射鏡（D1 2. N-layer Bragg reflector (D

Reflectors) R ， 4 13、多層量子井（Mqw， P 層布拉格反射鏡（D MultiPle Quantum Wel !) Ref lectors) B R，Distributed Bragg 1 5、歐姆接觸層 2 0 、介電層 2 1 、溝渠 2 2、電極 3 0、氧化物布拉格反射锫Reflectors) R, 4 13. Multi-layer quantum wells (Mqw, P-layer Bragg reflector (D MultiPle Quantum Wel!) Ref lectors) BR, Distributed Bragg 1 5. Ohmic contact layer 2 0, dielectric layer 2 1, trench 2 2 , Electrode 3 0, oxide Bragg reflection 锫

Bragg Reflectors) ^ ^ V D B R ? Distributed 發光區Bragg Reflectors) ^ ^ V D B R? Distributed light-emitting area

4 0 A B 晶片 蠢晶層 布拉格反射鏡（D B R，Distributed Bragg Ref lectors) *4 0 A B wafer Stupid layer Bragg reflector (D B R, Distributed Bragg Ref lectors) *

第10頁 M281297 圖式簡單說明 c 、介電層 D、溝渠 ΙΙΙΗΙΙΙ 第11頁Page 10 M281297 Schematic illustration c, Dielectric layer D, Ditch ΙΙΙΗΙΙΙ Page 11

Claims (1)

M281297 五、申請專利範1 1 、一種高功率發光二極體晶片，係包含： 基板，該基板上係設有磊晶層； ?層布拉格反射鏡（DBR)，該P層布拉格反射 鏡（D B R )設診磊晶層内部，以提昇發光效率； 介電層，係全部設於P層布拉格反射鏡（D B R ) 的歐姆接觸層上成長，且該介電層係挖成一溝渠； ，極，係設於介電層中所挖成之溝渠處；以及 *氧化物布拉格反射鏡（D B R )，係設於介電層所 =之溝渠位置，並與？層布拉格反射鏡（DBR) 2M281297 V. Patent application range 1 1. A high-power light-emitting diode wafer, comprising: a substrate, an epitaxial layer is provided on the substrate;? -Layer Bragg reflector (DBR), and the P-layer Bragg reflector (DBR) ) The interior of the epitaxial layer is set to improve the luminous efficiency; the dielectric layer is all grown on the ohmic contact layer of the P-layer Bragg reflector (DBR), and the dielectric layer is dug into a trench; It is located at the trench dug in the dielectric layer; and * Oxide Bragg Reflector (DBR), is located at the trench position where the dielectric layer =, and Layer Bragg Mirror (DBR) 2 精此，雙重共 具濾波之功效者 如申請專利範圍 ’其中该蟲晶層 (D B R )、多 射鏡（D B R ) 如申請專利範圍 ’其中該磊晶層 P層布拉袼反射 如申請專利範圍 ’其中§亥蟲晶層 P層布拉格反射 v族元素所組成 如申請專利範圍 派以捉馬發光效率，使發光角變窄及 第1項 由下而 層量子 者。 第2項 内的N 鏡（D 第2項 内的N 鏡（D 之化合 第1項 所述之 上依序 井（Μ 所述之 層布拉 B R ) 所述之 層布拉 B R ) 物者。 所述之 高功率 設有ΝQ W ) 兩功率 格反射 係為對 焉功率 袼反射 係為元 咼功率 發光二極體晶} 層布拉格反射！ 及ρ層布拉格2 發光二極體晶} 鏡（D B R ) i 數層者。 發光二極體晶少 鏡（D B R ) i 素週期表m族石 發光 極體晶片For this reason, those who have dual common filtering effects such as the scope of patent application, where the worm crystal layer (DBR), multi-mirror (DBR) are patent application scope, where the epitaxial layer P layer Bragg reflection is as patent application scope. 'Among them, the helium crystal layer P layer of the Bragg reflection v group element is composed of the patent application range to capture the horse's luminous efficiency, narrow the luminous angle and the first item from the bottom to the quantum. Mirror N in item 2 (D Mirror N in item 2 (combination of D described in item 1 above) (Sequence well BR described by M) Strata BR described above) The high power is provided with NQ W) The two power grid reflection system is opposite power, and the reflection system is element power light emitting diode} layer Bragg reflection! And p-layer Bragg 2 light-emitting diode crystal} mirror (D B R) i with several layers. Light Emitting Diode Crystal (D B R) i Prime Periodic Table M Group Stone Light Emitting Polarity Chip M281297 五、申請專利範圍 ，其中該P層布拉格反射鏡（D B R )係為發光層者 〇 6 、如申請專利範圍第2項所述之高功率發光二極體晶片 ，其中該N層布拉格反射鏡（D B R )係為折射層者 發光二極體晶片 )及P層布拉格 鎵/砷化鋁（A 發光二極體晶片 R )係選自S i 、B a F T a 發光二極體晶片 R )係為對數的 發光二極體晶片 R )係在P層布 上成長者。 7 、如申請專利範圍絮2項所述之高功率 ，其中該N層布拉格反射鏡（DBR 反射鏡（D B R )係為對數的砷化鋁 1 GaAs/A lAs )結構者。 8 、如申請專利範圍第1項所述之高功率 ，其中該氧化物布拉格反射鏡（D B 〇2、Si3N4、Ti〇2、Hf〇2 2〇5所搭配組成之氧化物者。 9 、如申請專利範圍第1項所述之高功率 ，其中該氧化物布拉格反射鏡（D B 二氧化石夕/氮化石夕之交替薄膜者。 1 0、如申請專利範圍第1項所述之高功率 ，其中該氧化物布拉格反射鏡（D B 拉格反射鏡（D B R )的歐姆接觸層M281297 5. The scope of patent application, in which the P-layer Bragg reflector (DBR) is a light-emitting layer. 06. The high-power light-emitting diode wafer described in item 2 of the patent scope, where the N-layer Bragg mirror (DBR) is a refractive layer light emitting diode wafer) and P-layer Bragg gallium / aluminum arsenide (A light emitting diode wafer R) is selected from Si, Ba a FT a light emitting diode wafer R) system The logarithmic light-emitting diode wafer (R) is grown on a P-layer cloth. 7. The high power as described in item 2 of the patent application scope, wherein the N-layer Bragg reflector (DBR reflector (DBR) is a logarithmic aluminum arsenide 1 GaAs / AlAs) structure. 8. The high power as described in item 1 of the scope of the patent application, wherein the oxide Bragg reflector (DB 02, Si3N4, Ti02, Hf 02 2 05 is an oxide with a matching composition. 9, such as The high power described in the first scope of the patent application, among which the oxide Bragg reflector (DB dioxide dioxide / nitride stone alternate thin film. 10, the high power as described in the first scope of the patent application, Wherein the ohmic contact layer of the oxide Bragg reflector (DB Bragg reflector (DBR)) 第13頁Page 13