TWI842941B - Semiconductor device manufacturing method, adhesive layer selection method, and dicing-bonding integrated film and manufacturing method thereof - Google Patents
Semiconductor device manufacturing method, adhesive layer selection method, and dicing-bonding integrated film and manufacturing method thereof Download PDFInfo
- Publication number
- TWI842941B TWI842941B TW109127740A TW109127740A TWI842941B TW I842941 B TWI842941 B TW I842941B TW 109127740 A TW109127740 A TW 109127740A TW 109127740 A TW109127740 A TW 109127740A TW I842941 B TWI842941 B TW I842941B
- Authority
- TW
- Taiwan
- Prior art keywords
- adhesive layer
- dicing
- layer
- active energy
- film
- Prior art date
Links
- 239000012790 adhesive layer Substances 0.000 title claims abstract description 254
- 239000004065 semiconductor Substances 0.000 title claims abstract description 45
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 40
- 238000010187 selection method Methods 0.000 title claims description 7
- 239000010410 layer Substances 0.000 claims abstract description 61
- 235000012431 wafers Nutrition 0.000 claims abstract description 53
- 239000000758 substrate Substances 0.000 claims abstract description 50
- 239000007767 bonding agent Substances 0.000 claims abstract description 32
- 239000002923 metal particle Substances 0.000 claims abstract description 29
- 230000001678 irradiating effect Effects 0.000 claims abstract description 16
- 239000000853 adhesive Substances 0.000 claims description 59
- 230000001070 adhesive effect Effects 0.000 claims description 59
- 238000000034 method Methods 0.000 claims description 41
- 239000002245 particle Substances 0.000 claims description 25
- 229920005989 resin Polymers 0.000 claims description 15
- 239000011347 resin Substances 0.000 claims description 15
- 239000011248 coating agent Substances 0.000 claims description 7
- 238000000576 coating method Methods 0.000 claims description 7
- 229920001187 thermosetting polymer Polymers 0.000 claims description 7
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 239000004332 silver Substances 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- 239000011203 carbon fibre reinforced carbon Substances 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 238000001029 thermal curing Methods 0.000 claims description 3
- 239000010408 film Substances 0.000 description 108
- 239000003822 epoxy resin Substances 0.000 description 41
- 229920000647 polyepoxide Polymers 0.000 description 41
- 239000002966 varnish Substances 0.000 description 28
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 20
- 230000003746 surface roughness Effects 0.000 description 20
- 238000011282 treatment Methods 0.000 description 19
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 18
- 238000005520 cutting process Methods 0.000 description 16
- -1 o-catechol Chemical compound 0.000 description 16
- 238000005259 measurement Methods 0.000 description 15
- 230000017525 heat dissipation Effects 0.000 description 14
- 229920000178 Acrylic resin Polymers 0.000 description 13
- 239000004925 Acrylic resin Substances 0.000 description 13
- 239000000203 mixture Substances 0.000 description 13
- 239000005011 phenolic resin Substances 0.000 description 13
- 239000002904 solvent Substances 0.000 description 12
- 238000009499 grossing Methods 0.000 description 11
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 10
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 9
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 9
- 239000005020 polyethylene terephthalate Substances 0.000 description 9
- 229920000139 polyethylene terephthalate Polymers 0.000 description 9
- 238000003825 pressing Methods 0.000 description 9
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 description 8
- 238000010438 heat treatment Methods 0.000 description 8
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 7
- 238000011156 evaluation Methods 0.000 description 7
- 229920001568 phenolic resin Polymers 0.000 description 7
- 239000000126 substance Substances 0.000 description 7
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 239000004593 Epoxy Substances 0.000 description 6
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 6
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 6
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 6
- 229920001971 elastomer Polymers 0.000 description 6
- 239000007788 liquid Substances 0.000 description 6
- 229920003986 novolac Polymers 0.000 description 6
- 239000007787 solid Substances 0.000 description 6
- 239000000243 solution Substances 0.000 description 6
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 5
- 239000004698 Polyethylene Substances 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 239000004848 polyfunctional curative Substances 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 239000003795 chemical substances by application Substances 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 238000001035 drying Methods 0.000 description 4
- 239000000806 elastomer Substances 0.000 description 4
- 230000005484 gravity Effects 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000002156 mixing Methods 0.000 description 4
- 229920000573 polyethylene Polymers 0.000 description 4
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 4
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 3
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000032683 aging Effects 0.000 description 3
- 239000004305 biphenyl Substances 0.000 description 3
- 235000010290 biphenyl Nutrition 0.000 description 3
- 238000003851 corona treatment Methods 0.000 description 3
- 229930003836 cresol Natural products 0.000 description 3
- 238000001723 curing Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 125000003700 epoxy group Chemical group 0.000 description 3
- 125000000524 functional group Chemical group 0.000 description 3
- 238000005227 gel permeation chromatography Methods 0.000 description 3
- 150000002460 imidazoles Chemical class 0.000 description 3
- 238000004898 kneading Methods 0.000 description 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 150000002989 phenols Chemical class 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000003756 stirring Methods 0.000 description 3
- KJCVRFUGPWSIIH-UHFFFAOYSA-N 1-naphthol Chemical compound C1=CC=C2C(O)=CC=CC2=C1 KJCVRFUGPWSIIH-UHFFFAOYSA-N 0.000 description 2
- OZAIFHULBGXAKX-UHFFFAOYSA-N 2-(2-cyanopropan-2-yldiazenyl)-2-methylpropanenitrile Chemical compound N#CC(C)(C)N=NC(C)(C)C#N OZAIFHULBGXAKX-UHFFFAOYSA-N 0.000 description 2
- JWAZRIHNYRIHIV-UHFFFAOYSA-N 2-naphthol Chemical compound C1=CC=CC2=CC(O)=CC=C21 JWAZRIHNYRIHIV-UHFFFAOYSA-N 0.000 description 2
- BVYPJEBKDLFIDL-UHFFFAOYSA-N 3-(2-phenylimidazol-1-yl)propanenitrile Chemical compound N#CCCN1C=CN=C1C1=CC=CC=C1 BVYPJEBKDLFIDL-UHFFFAOYSA-N 0.000 description 2
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 2
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 2
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 2
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 2
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 description 2
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 2
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 2
- 239000004743 Polypropylene Substances 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 2
- 229920000800 acrylic rubber Polymers 0.000 description 2
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000007822 coupling agent Substances 0.000 description 2
- 238000004132 cross linking Methods 0.000 description 2
- RWGFKTVRMDUZSP-UHFFFAOYSA-N cumene Chemical compound CC(C)C1=CC=CC=C1 RWGFKTVRMDUZSP-UHFFFAOYSA-N 0.000 description 2
- SWXVUIWOUIDPGS-UHFFFAOYSA-N diacetone alcohol Chemical compound CC(=O)CC(C)(C)O SWXVUIWOUIDPGS-UHFFFAOYSA-N 0.000 description 2
- 239000003480 eluent Substances 0.000 description 2
- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 description 2
- 230000009477 glass transition Effects 0.000 description 2
- 239000003999 initiator Substances 0.000 description 2
- 238000000691 measurement method Methods 0.000 description 2
- RBQRWNWVPQDTJJ-UHFFFAOYSA-N methacryloyloxyethyl isocyanate Chemical compound CC(=C)C(=O)OCCN=C=O RBQRWNWVPQDTJJ-UHFFFAOYSA-N 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- UAEPNZWRGJTJPN-UHFFFAOYSA-N methylcyclohexane Chemical compound CC1CCCCC1 UAEPNZWRGJTJPN-UHFFFAOYSA-N 0.000 description 2
- 150000004780 naphthols Chemical class 0.000 description 2
- HFPZCAJZSCWRBC-UHFFFAOYSA-N p-cymene Chemical compound CC(C)C1=CC=C(C)C=C1 HFPZCAJZSCWRBC-UHFFFAOYSA-N 0.000 description 2
- 229920000058 polyacrylate Polymers 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 238000006116 polymerization reaction Methods 0.000 description 2
- 229920000306 polymethylpentene Polymers 0.000 description 2
- 239000011116 polymethylpentene Substances 0.000 description 2
- 229920000098 polyolefin Polymers 0.000 description 2
- 229920001955 polyphenylene ether Polymers 0.000 description 2
- 229920001155 polypropylene Polymers 0.000 description 2
- 239000004810 polytetrafluoroethylene Substances 0.000 description 2
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 238000009849 vacuum degassing Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 239000008096 xylene Substances 0.000 description 2
- QNODIIQQMGDSEF-UHFFFAOYSA-N (1-hydroxycyclohexyl)-phenylmethanone Chemical compound C=1C=CC=CC=1C(=O)C1(O)CCCCC1 QNODIIQQMGDSEF-UHFFFAOYSA-N 0.000 description 1
- JYEUMXHLPRZUAT-UHFFFAOYSA-N 1,2,3-triazine Chemical compound C1=CN=NN=C1 JYEUMXHLPRZUAT-UHFFFAOYSA-N 0.000 description 1
- HGCMSCWGVAYWHR-UHFFFAOYSA-N 1,3,5-trimethyl-2-[[phenyl-[(2,4,6-trimethylphenyl)methyl]phosphoryl]methyl]benzene Chemical compound CC1=CC(C)=CC(C)=C1CP(=O)(C=1C=CC=CC=1)CC1=C(C)C=C(C)C=C1C HGCMSCWGVAYWHR-UHFFFAOYSA-N 0.000 description 1
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 1
- MODAACUAXYPNJH-UHFFFAOYSA-N 1-(methoxymethyl)-4-[4-(methoxymethyl)phenyl]benzene Chemical group C1=CC(COC)=CC=C1C1=CC=C(COC)C=C1 MODAACUAXYPNJH-UHFFFAOYSA-N 0.000 description 1
- FBHPRUXJQNWTEW-UHFFFAOYSA-N 1-benzyl-2-methylimidazole Chemical compound CC1=NC=CN1CC1=CC=CC=C1 FBHPRUXJQNWTEW-UHFFFAOYSA-N 0.000 description 1
- 239000012956 1-hydroxycyclohexylphenyl-ketone Substances 0.000 description 1
- HECLRDQVFMWTQS-RGOKHQFPSA-N 1755-01-7 Chemical compound C1[C@H]2[C@@H]3CC=C[C@@H]3[C@@H]1C=C2 HECLRDQVFMWTQS-RGOKHQFPSA-N 0.000 description 1
- BLBVJHVRECUXKP-UHFFFAOYSA-N 2,3-dimethoxy-1,4-dimethylbenzene Chemical group COC1=C(C)C=CC(C)=C1OC BLBVJHVRECUXKP-UHFFFAOYSA-N 0.000 description 1
- GOXQRTZXKQZDDN-UHFFFAOYSA-N 2-Ethylhexyl acrylate Chemical compound CCCCC(CC)COC(=O)C=C GOXQRTZXKQZDDN-UHFFFAOYSA-N 0.000 description 1
- CDAWCLOXVUBKRW-UHFFFAOYSA-N 2-aminophenol Chemical compound NC1=CC=CC=C1O CDAWCLOXVUBKRW-UHFFFAOYSA-N 0.000 description 1
- OMIGHNLMNHATMP-UHFFFAOYSA-N 2-hydroxyethyl prop-2-enoate Chemical compound OCCOC(=O)C=C OMIGHNLMNHATMP-UHFFFAOYSA-N 0.000 description 1
- LXBGSDVWAMZHDD-UHFFFAOYSA-N 2-methyl-1h-imidazole Chemical compound CC1=NC=CN1 LXBGSDVWAMZHDD-UHFFFAOYSA-N 0.000 description 1
- SESYNEDUKZDRJL-UHFFFAOYSA-N 3-(2-methylimidazol-1-yl)propanenitrile Chemical compound CC1=NC=CN1CCC#N SESYNEDUKZDRJL-UHFFFAOYSA-N 0.000 description 1
- LVNLBBGBASVLLI-UHFFFAOYSA-N 3-triethoxysilylpropylurea Chemical compound CCO[Si](OCC)(OCC)CCCNC(N)=O LVNLBBGBASVLLI-UHFFFAOYSA-N 0.000 description 1
- VPWNQTHUCYMVMZ-UHFFFAOYSA-N 4,4'-sulfonyldiphenol Chemical compound C1=CC(O)=CC=C1S(=O)(=O)C1=CC=C(O)C=C1 VPWNQTHUCYMVMZ-UHFFFAOYSA-N 0.000 description 1
- LPEKGGXMPWTOCB-UHFFFAOYSA-N 8beta-(2,3-epoxy-2-methylbutyryloxy)-14-acetoxytithifolin Natural products COC(=O)C(C)O LPEKGGXMPWTOCB-UHFFFAOYSA-N 0.000 description 1
- 229920002126 Acrylic acid copolymer Polymers 0.000 description 1
- NLHHRLWOUZZQLW-UHFFFAOYSA-N Acrylonitrile Chemical compound C=CC#N NLHHRLWOUZZQLW-UHFFFAOYSA-N 0.000 description 1
- 238000007088 Archimedes method Methods 0.000 description 1
- 229930185605 Bisphenol Natural products 0.000 description 1
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-M Methacrylate Chemical compound CC(=C)C([O-])=O CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 description 1
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 1
- 239000004697 Polyetherimide Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 239000004820 Pressure-sensitive adhesive Substances 0.000 description 1
- XBDQKXXYIPTUBI-UHFFFAOYSA-M Propionate Chemical compound CCC([O-])=O XBDQKXXYIPTUBI-UHFFFAOYSA-M 0.000 description 1
- 101100233916 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) KAR5 gene Proteins 0.000 description 1
- PJANXHGTPQOBST-VAWYXSNFSA-N Stilbene Natural products C=1C=CC=CC=1/C=C/C1=CC=CC=C1 PJANXHGTPQOBST-VAWYXSNFSA-N 0.000 description 1
- XQBCVRSTVUHIGH-UHFFFAOYSA-L [dodecanoyloxy(dioctyl)stannyl] dodecanoate Chemical compound CCCCCCCCCCCC(=O)O[Sn](CCCCCCCC)(CCCCCCCC)OC(=O)CCCCCCCCCCC XQBCVRSTVUHIGH-UHFFFAOYSA-L 0.000 description 1
- KXKVLQRXCPHEJC-UHFFFAOYSA-N acetic acid trimethyl ester Natural products COC(C)=O KXKVLQRXCPHEJC-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 230000001476 alcoholic effect Effects 0.000 description 1
- 125000003172 aldehyde group Chemical group 0.000 description 1
- 150000001338 aliphatic hydrocarbons Chemical class 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- 238000004873 anchoring Methods 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 230000003078 antioxidant effect Effects 0.000 description 1
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- LLEMOWNGBBNAJR-UHFFFAOYSA-N biphenyl-2-ol Chemical compound OC1=CC=CC=C1C1=CC=CC=C1 LLEMOWNGBBNAJR-UHFFFAOYSA-N 0.000 description 1
- MQDJYUACMFCOFT-UHFFFAOYSA-N bis[2-(1-hydroxycyclohexyl)phenyl]methanone Chemical compound C=1C=CC=C(C(=O)C=2C(=CC=CC=2)C2(O)CCCCC2)C=1C1(O)CCCCC1 MQDJYUACMFCOFT-UHFFFAOYSA-N 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 230000005587 bubbling Effects 0.000 description 1
- 229940043232 butyl acetate Drugs 0.000 description 1
- QHIWVLPBUQWDMQ-UHFFFAOYSA-N butyl prop-2-enoate;methyl 2-methylprop-2-enoate;prop-2-enoic acid Chemical compound OC(=O)C=C.COC(=O)C(C)=C.CCCCOC(=O)C=C QHIWVLPBUQWDMQ-UHFFFAOYSA-N 0.000 description 1
- 238000011088 calibration curve Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 150000004649 carbonic acid derivatives Chemical class 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 239000003431 cross linking reagent Substances 0.000 description 1
- 238000007766 curtain coating Methods 0.000 description 1
- 150000004292 cyclic ethers Chemical class 0.000 description 1
- 150000001924 cycloalkanes Chemical class 0.000 description 1
- 150000004985 diamines Chemical class 0.000 description 1
- GYZLOYUZLJXAJU-UHFFFAOYSA-N diglycidyl ether Chemical class C1OC1COCC1CO1 GYZLOYUZLJXAJU-UHFFFAOYSA-N 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- ODQWQRRAPPTVAG-GZTJUZNOSA-N doxepin Chemical compound C1OC2=CC=CC=C2C(=C/CCN(C)C)/C2=CC=CC=C21 ODQWQRRAPPTVAG-GZTJUZNOSA-N 0.000 description 1
- 238000000921 elemental analysis Methods 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229940093499 ethyl acetate Drugs 0.000 description 1
- 229940116333 ethyl lactate Drugs 0.000 description 1
- 125000003983 fluorenyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3CC12)* 0.000 description 1
- 238000005187 foaming Methods 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- 238000007756 gravure coating Methods 0.000 description 1
- LHGVFZTZFXWLCP-UHFFFAOYSA-N guaiacol Chemical compound COC1=CC=CC=C1O LHGVFZTZFXWLCP-UHFFFAOYSA-N 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- VRINOTYEGADLMW-UHFFFAOYSA-N heptyl(trimethoxy)silane Chemical compound CCCCCCC[Si](OC)(OC)OC VRINOTYEGADLMW-UHFFFAOYSA-N 0.000 description 1
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 239000012948 isocyanate Substances 0.000 description 1
- 150000002513 isocyanates Chemical class 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 239000004850 liquid epoxy resins (LERs) Substances 0.000 description 1
- AUHZEENZYGFFBQ-UHFFFAOYSA-N mesitylene Substances CC1=CC(C)=CC(C)=C1 AUHZEENZYGFFBQ-UHFFFAOYSA-N 0.000 description 1
- 125000001827 mesitylenyl group Chemical group [H]C1=C(C(*)=C(C([H])=C1C([H])([H])[H])C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 229940057867 methyl lactate Drugs 0.000 description 1
- GYNNXHKOJHMOHS-UHFFFAOYSA-N methyl-cycloheptane Natural products CC1CCCCCC1 GYNNXHKOJHMOHS-UHFFFAOYSA-N 0.000 description 1
- 239000003595 mist Substances 0.000 description 1
- CQDGTJPVBWZJAZ-UHFFFAOYSA-N monoethyl carbonate Chemical compound CCOC(O)=O CQDGTJPVBWZJAZ-UHFFFAOYSA-N 0.000 description 1
- PHQOGHDTIVQXHL-UHFFFAOYSA-N n'-(3-trimethoxysilylpropyl)ethane-1,2-diamine Chemical compound CO[Si](OC)(OC)CCCNCCN PHQOGHDTIVQXHL-UHFFFAOYSA-N 0.000 description 1
- KBJFYLLAMSZSOG-UHFFFAOYSA-N n-(3-trimethoxysilylpropyl)aniline Chemical compound CO[Si](OC)(OC)CCCNC1=CC=CC=C1 KBJFYLLAMSZSOG-UHFFFAOYSA-N 0.000 description 1
- NXPPAOGUKPJVDI-UHFFFAOYSA-N naphthalene-1,2-diol Chemical compound C1=CC=CC2=C(O)C(O)=CC=C21 NXPPAOGUKPJVDI-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000010943 off-gassing Methods 0.000 description 1
- 150000002903 organophosphorus compounds Chemical class 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000013034 phenoxy resin Substances 0.000 description 1
- 229920006287 phenoxy resin Polymers 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 229920006255 plastic film Polymers 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 125000003367 polycyclic group Chemical group 0.000 description 1
- 229920001601 polyetherimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 239000002987 primer (paints) Substances 0.000 description 1
- FOWDZVNRQHPXDO-UHFFFAOYSA-N propyl hydrogen carbonate Chemical compound CCCOC(O)=O FOWDZVNRQHPXDO-UHFFFAOYSA-N 0.000 description 1
- 150000003242 quaternary ammonium salts Chemical class 0.000 description 1
- 239000012925 reference material Substances 0.000 description 1
- GHMLBKRAJCXXBS-UHFFFAOYSA-N resorcinol Chemical compound OC1=CC=CC(O)=C1 GHMLBKRAJCXXBS-UHFFFAOYSA-N 0.000 description 1
- 229960001755 resorcinol Drugs 0.000 description 1
- 238000000518 rheometry Methods 0.000 description 1
- 238000007761 roller coating Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000000790 scattering method Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000012798 spherical particle Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- PJANXHGTPQOBST-UHFFFAOYSA-N stilbene Chemical compound C=1C=CC=CC=1C=CC1=CC=CC=C1 PJANXHGTPQOBST-UHFFFAOYSA-N 0.000 description 1
- 235000021286 stilbenes Nutrition 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 238000010345 tape casting Methods 0.000 description 1
- 150000003512 tertiary amines Chemical class 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
- 125000005023 xylyl group Chemical group 0.000 description 1
Abstract
本揭示的半導體裝置的製造方法包括：（A）準備依序包括基材層、黏著劑層、及接著劑層的切割-黏晶一體型膜的步驟；（B）向所述一體型膜照射活性能量射線的步驟；（C）對接著劑層黏貼晶圓的步驟；（D）藉由將晶圓及接著劑層單片化而獲得多個帶接著劑片的晶片的步驟；（E）自黏著劑層拾取帶接著劑片的晶片的步驟；以及（F）將帶接著劑片的晶片安裝在基板或其他晶片上的步驟，且接著劑層以該接著劑層的總質量基準計含有75質量%以上的金屬粒子。The manufacturing method of the semiconductor device disclosed in the present invention includes: (A) preparing a dicing-bonding monolithic film including a substrate layer, an adhesive layer, and a bonding agent layer in sequence; (B) irradiating the monolithic film with active energy rays; (C) bonding a wafer to the bonding agent layer; (D) obtaining a plurality of chips with bonding agent wafers by singulating the wafer and the bonding agent layer; (E) picking up the chip with bonding agent wafer from the adhesive layer; and (F) mounting the chip with bonding agent wafer on a substrate or other chip, wherein the bonding agent layer contains 75% by mass or more of metal particles based on the total mass of the bonding agent layer.
Description
本揭示是有關於一種半導體裝置的製造方法、接著劑層的選定方法、以及包括接著劑層的切割-黏晶一體型膜及其製造方法。The present disclosure relates to a method for manufacturing a semiconductor device, a method for selecting an adhesive layer, and a dicing-die bonding integrated film including an adhesive layer and a method for manufacturing the same.
先前，半導體裝置經過以下的步驟而製造。首先，將半導體晶圓貼附於切割用黏著片，於該狀態下，將半導體晶圓單片化為半導體晶片（切割步驟）。其後，實施拾取步驟、壓接步驟、及黏晶步驟等。專利文獻1揭示兼具於切割步驟中將半導體晶圓固定的功能及於黏晶步驟中使半導體晶片與基板接著的功能的黏接著片（切割黏晶片）。在切割步驟中，藉由將半導體晶圓及接著劑層單片化，而獲得帶接著劑片的晶片。Previously, semiconductor devices were manufactured through the following steps. First, a semiconductor wafer was attached to a dicing adhesive sheet, and in this state, the semiconductor wafer was singulated into semiconductor chips (dicing step). Thereafter, a picking step, a pressing step, and a die bonding step were performed. Patent document 1 discloses an adhesive sheet (dicing adhesive chip) that has the function of fixing the semiconductor wafer in the dicing step and the function of bonding the semiconductor chip to the substrate in the die bonding step. In the dicing step, a chip with an adhesive sheet is obtained by singulating the semiconductor wafer and the adhesive layer.
近年來，進行電力的控制等的被稱為功率半導體裝置的元件正在普及。功率半導體裝置容易因供給的電流而發熱，從而要求優異的散熱性。專利文獻2揭示了硬化後的散熱性較硬化前的散熱性高的導電性膜狀接著劑及帶膜狀接著劑的切割帶。 [現有技術文獻] [專利文獻]In recent years, components called power semiconductor devices that control electric power, etc. have become popular. Power semiconductor devices are prone to heat generation due to the supplied current, and thus require excellent heat dissipation. Patent document 2 discloses a conductive film adhesive and a dicing tape with a film adhesive having a higher heat dissipation after curing than before curing. [Prior art document] [Patent document]
[專利文獻1]日本專利特開2008-218571號公報 [專利文獻2]日本專利第6396189號公報[Patent document 1] Japanese Patent Publication No. 2008-218571 [Patent document 2] Japanese Patent Publication No. 6396189
[發明所欲解決之課題] 本發明者等人在開發具有優異的散熱性的半導體裝置的過程中發現，在切割-黏晶一體型膜的接著劑層中，調配以所述接著劑層的總質量基準計為75質量%以上的金屬粒子時，接著劑層與黏著劑層的密接性容易變得不充分。兩者的密接性不充分時，會產生在切割步驟中帶接著劑片的晶片自黏著劑層脫離的不良情況。[Problem to be solved by the invention] The inventors of the present invention and others have discovered during the process of developing a semiconductor device with excellent heat dissipation that when the adhesive layer of the dicing-bonding integrated film contains 75% or more of metal particles based on the total mass of the adhesive layer, the adhesion between the adhesive layer and the adhesive layer is likely to become insufficient. When the adhesion between the two is insufficient, the chip with the adhesive sheet will separate from the adhesive layer during the dicing step.
本揭示提供一種在將晶圓及接著劑層單片化而在黏著劑層上製作多個帶接著劑片的晶片的切割步驟中，能夠充分抑制帶接著劑片的晶片自黏著劑層脫離，而能夠有效率地製造具有優異的散熱性的半導體裝置的方法。另外，本揭示提供一種選定對於有效率地製造所述半導體裝置有用的接著劑層的方法、以及包括接著劑層的切割-黏晶一體型膜及其製造方法。 [解決課題之手段]The present disclosure provides a method for efficiently manufacturing a semiconductor device with excellent heat dissipation by sufficiently suppressing the separation of the chip with the adhesive chip from the adhesive layer during the dicing step of singulating a wafer and an adhesive layer to produce a plurality of chips with adhesive chips on the adhesive layer. In addition, the present disclosure provides a method for selecting an adhesive layer useful for efficiently manufacturing the semiconductor device, and a dicing-bonding integrated film including an adhesive layer and a method for manufacturing the same. [Means for Solving the Problem]
先前，作為降低接著劑層與黏著劑層的密接性的方法，已知有對黏著劑層照射活性能量射線（例如紫外線）（參照專利文獻1段落[0088]）。本發明者等人發現，當接著劑層包含大量的金屬粒子時，照射活性能量射線反而增大接著劑層與黏著劑層的密接性，從而完成了以下的本揭示的發明。Previously, as a method for reducing the adhesion between the adhesive layer and the adhesive layer, it is known to irradiate the adhesive layer with active energy rays (e.g., ultraviolet rays) (see patent document 1, paragraph [0088]). The inventors and others found that when the adhesive layer contains a large amount of metal particles, irradiation with active energy rays increases the adhesion between the adhesive layer and the adhesive layer, thereby completing the following invention disclosed herein.
本揭示的一方面是有關於一種半導體裝置的製造方法。所述製造方法包括以下的步驟，且切割-黏晶一體型膜的接著劑層含有以該接著劑層的總質量基準計為75質量%以上的金屬粒子。 （A）準備依序包括基材層、黏著劑層、及接著劑層的切割-黏晶一體型膜的步驟； （B）向所述一體型膜照射活性能量射線的步驟； （C）對所述一體型膜的接著劑層黏貼晶圓的步驟； （D）藉由將晶圓及接著劑層單片化而獲得多個帶接著劑片的晶片的步驟； （E）自黏著劑層拾取帶接著劑片的晶片的步驟；以及 （F）將帶接著劑片的晶片安裝在基板或其他晶片上的步驟。One aspect of the present disclosure is a method for manufacturing a semiconductor device. The manufacturing method includes the following steps, and the adhesive layer of the dicing-bonding film contains metal particles accounting for 75% or more of the total mass of the adhesive layer. (A) preparing a dicing-bonding monolithic film including a substrate layer, an adhesive layer, and a bonding agent layer in sequence; (B) irradiating the monolithic film with active energy rays; (C) bonding a wafer to the bonding agent layer of the monolithic film; (D) obtaining a plurality of chips with bonding agent wafers by singulating the wafer and the bonding agent layer; (E) picking up the chip with bonding agent wafer from the adhesive layer; and (F) mounting the chip with bonding agent wafer on a substrate or other chip.
根據上述製造方法，藉由在（D）步驟（切割步驟）之前實施（B）步驟（活性能量射線照射步驟），能夠提高接著劑層與黏著劑層的密接性，在切割步驟中，能夠充分抑制帶接著劑片的晶片自黏著劑層脫離。再者，在所述製造方法中，可在（B）步驟之後實施（C）步驟，亦可在（C）步驟之後實施（B）步驟。According to the above manufacturing method, by performing step (B) (active energy ray irradiation step) before step (D) (cutting step), the adhesion between the adhesive layer and the adhesive layer can be improved, and in the cutting step, the wafer with the adhesive sheet can be sufficiently suppressed from separating from the adhesive layer. Furthermore, in the above manufacturing method, step (C) can be performed after step (B), or step (B) can be performed after step (C).
在本揭示中，照射活性能量射線後的黏著劑層與接著劑層的T形剝離強度B只要較照射活性能量射線前的兩者的T形剝離強度A大即可。自切割步驟中的兩者的充分的密接性的觀點出發，照射活性能量射線後的T形剝離強度B的下限值例如為0.07 N/25 mm。另一方面，自優異的拾取性的觀點出發，T形剝離強度B的上限值例如為0.5 N/25 mm。再者，此處所說的T形剝離強度是指藉由實施例中記載的方法計算出的值。In the present disclosure, the T-peel strength B of the adhesive layer and the adhesive layer after irradiation with active energy rays only needs to be greater than the T-peel strength A of the two before irradiation with active energy rays. From the perspective of sufficient adhesion between the two in the cutting step, the lower limit value of the T-peel strength B after irradiation with active energy rays is, for example, 0.07 N/25 mm. On the other hand, from the perspective of excellent pickup, the upper limit value of the T-peel strength B is, for example, 0.5 N/25 mm. Furthermore, the T-peel strength mentioned here refers to the value calculated by the method described in the embodiment.
本發明者等人推測，在接著劑層含有大量的金屬粒子的情況下，活性能量射線對接著劑層中含有的金屬粒子的表面以及與其相接的黏著劑層的至少一者進行改質是金屬粒子與黏著劑層的密接性增大的主要原因。本發明者等人藉由掃描型電子顯微鏡（scanning electron microscope，SEM）確認到在自接著劑層剝離的黏著劑層的表面附著有原本包含在接著劑層中的金屬粒子。The inventors of the present invention speculate that, when the adhesive layer contains a large amount of metal particles, the active energy rays modify at least one of the surface of the metal particles contained in the adhesive layer and the adhesive layer in contact therewith, which is the main reason for the increase in the adhesion between the metal particles and the adhesive layer. The inventors of the present invention confirmed by scanning electron microscope (SEM) that the metal particles originally contained in the adhesive layer were attached to the surface of the adhesive layer peeled off from the adhesive layer.
本揭示的一形態中，黏著劑層含有具有對活性能量射線的照射具有反應性的碳-碳雙鍵的樹脂。在此種情況下，藉由活性能量射線的照射，黏著劑層被改質，與金屬粒子的密接性容易增大。In one embodiment of the present disclosure, the adhesive layer contains a resin having a carbon-carbon double bond that is reactive to irradiation with active energy rays. In this case, the adhesive layer is modified by irradiation with active energy rays, and the adhesion with the metal particles is easily increased.
本揭示的一方面是一種與基材層及黏著劑層一起構成切割-黏晶一體型膜的接著劑層的選定方法。所述選定方法包括以下的步驟，且選定照射活性能量射線後的T形剝離強度B大於照射活性能量射線前的T形剝離強度A的接著劑層。 ·準備包括基材層、及設置在基材層的其中一個面上的黏著劑層的切割膜的步驟； ·在黏著劑層的表面上，形成含有以接著劑層的總質量基準計為75質量%以上的金屬粒子的接著劑層，從而獲得切割-黏晶一體型膜的步驟； ·向所述一體型膜照射活性能量射線的步驟； ·測定照射活性能量射線前的黏著劑層與接著劑層的T形剝離強度A的步驟；以及 ·測定照射活性能量射線後的黏著劑層與接著劑層的T形剝離強度B的步驟。One aspect of the present disclosure is a method for selecting an adhesive layer that forms a dicing-bonding integrated film together with a substrate layer and an adhesive layer. The selection method includes the following steps, and the adhesive layer is selected such that the T-shaped peeling strength B after irradiation with active energy rays is greater than the T-shaped peeling strength A before irradiation with active energy rays. ·Preparing a dicing film including a substrate layer and an adhesive layer disposed on one surface of the substrate layer; ·Forming an adhesive layer containing metal particles accounting for 75% by mass or more of the total mass of the adhesive layer on the surface of the adhesive layer to obtain a dicing-bonding monolithic film; ·Irradiating the monolithic film with active energy rays; ·Determining the T-peel strength A of the adhesive layer and the adhesive layer before irradiation with active energy rays; and ·Determining the T-peel strength B of the adhesive layer and the adhesive layer after irradiation with active energy rays.
根據所述選定方法，能夠選定對於有效率地製造具有優異的散熱性的半導體裝置而言有用的接著劑層。According to the selection method, it is possible to select an adhesive layer useful for efficiently manufacturing a semiconductor device having excellent heat dissipation performance.
本揭示的一方面是有關於一種依序包括基材層、黏著劑層、及接著劑層的切割-黏晶一體型膜的製造方法。所述製造方法包括以下的步驟。 ·準備包括基材層、及設置在基材層的其中一個面上的黏著劑層的切割膜的步驟； ·在黏著劑層的表面上，形成含有以接著劑層的總質量基準計為75質量%以上的金屬粒子的接著劑層，從而獲得切割-黏晶一體型膜的步驟； ·藉由向所述切割-黏晶一體型膜照射活性能量射線，增大黏著劑層與接著劑層的T形剝離強度的步驟。One aspect of the present disclosure is related to a method for manufacturing a dicing-bonding integrated film that sequentially includes a substrate layer, an adhesive layer, and a bonding agent layer. The manufacturing method includes the following steps. · A step of preparing a dicing film that includes a substrate layer and an adhesive layer disposed on one surface of the substrate layer; · A step of forming a bonding agent layer containing metal particles that accounts for 75% by mass or more of the total mass of the bonding agent layer on the surface of the adhesive layer to obtain a dicing-bonding integrated film; · A step of increasing the T-peel strength of the adhesive layer and the bonding agent layer by irradiating the dicing-bonding integrated film with active energy rays.
根據所述製造方法，能夠製造對於有效率地製造具有優異的散熱性的半導體裝置而言有用的切割-黏晶一體型膜。在所述製造方法中，作為接著劑層，可使用藉由本揭示的所述選定方法而選定的接著劑層。According to the manufacturing method, a dicing-die bonding integrated film useful for efficiently manufacturing a semiconductor device having excellent heat dissipation can be manufactured. In the manufacturing method, as the adhesive layer, an adhesive layer selected by the selection method disclosed in the present invention can be used.
本揭示的一方面是有關於一種切割-黏晶一體型膜。所述一體型膜包括基材層；黏著劑層，具有與基材層相對的第一表面及其相反側的第二表面；以及接著劑層，以覆蓋第二表面的中央部的方式設置，且黏著劑層與接著劑層的界面具有與接著劑層中的晶圓的貼附位置對應、且被照射了活性能量射線的區域，所述區域中的黏著劑層與接著劑層的T形剝離強度為0.07 N/25 mm以上。One aspect of the present disclosure is a dicing-bonding integrated film. The integrated film includes a substrate layer; an adhesive layer having a first surface opposite to the substrate layer and a second surface opposite to the substrate layer; and an adhesive layer arranged to cover the central portion of the second surface, wherein the interface between the adhesive layer and the adhesive layer has an area corresponding to the attachment position of the wafer in the adhesive layer and irradiated with active energy rays, and the T-peel strength of the adhesive layer and the adhesive layer in the area is greater than 0.07 N/25 mm.
所述切割-黏晶一體型膜藉由照射活性能量射線，使黏著劑層與接著劑層具有充分的密接性。因此，在切割步驟中，能夠充分抑制帶接著劑片的晶片自黏著劑層脫離。另外，由於所述切割-黏晶一體型膜處於已經照射了活性能量射線的狀態，因此在半導體裝置的製造製程中能夠省略照射活性能量射線的步驟。The dicing-die-bonding integrated film is irradiated with active energy rays, so that the adhesive layer and the bonding agent layer have sufficient adhesion. Therefore, in the dicing step, the wafer with the bonding agent sheet can be sufficiently suppressed from separating from the adhesive layer. In addition, since the dicing-die-bonding integrated film is in a state of being irradiated with active energy rays, the step of irradiating active energy rays can be omitted in the manufacturing process of the semiconductor device.
在所述切割-黏晶一體型膜中，自優異的拾取性的觀點出發，黏著劑層與接著劑層的T形剝離強度例如為0.5 N/25 mm以下。所述接著劑層可含有熱硬化性樹脂成分，熱硬化後的接著劑層的熱傳導率例如為1.5 W/m·K～20 W/m·K。可根據接著劑層中調配的金屬粒子的量及種類，來調整熱硬化後的接著劑層的熱傳導率。 [發明的效果]In the dicing-bonding integrated film, from the perspective of excellent pickup, the T-peel strength of the adhesive layer and the adhesive layer is, for example, 0.5 N/25 mm or less. The adhesive layer may contain a thermosetting resin component, and the thermal conductivity of the adhesive layer after thermal curing is, for example, 1.5 W/m·K to 20 W/m·K. The thermal conductivity of the adhesive layer after thermal curing can be adjusted according to the amount and type of metal particles mixed in the adhesive layer. [Effect of the invention]
根據本揭示，提供一種在將晶圓及接著劑層單片化而在黏著劑層上製作多個帶接著劑片的晶片的切割步驟中，能夠充分抑制帶接著劑片的晶片自黏著劑層脫離，而能夠有效率地製造具有優異的散熱性的半導體裝置的方法。另外，根據本揭示，提供一種對於有效率地製造所述半導體裝置而言有用的接著劑層的選定方法、以及包括該接著劑層的切割-黏晶一體型膜及其製造方法。According to the present disclosure, a method is provided in which, in the dicing step of singulating a wafer and an adhesive layer to produce a plurality of wafers with adhesive wafers on the adhesive layer, the wafers with adhesive wafers can be sufficiently suppressed from detaching from the adhesive layer, thereby efficiently producing a semiconductor device with excellent heat dissipation. In addition, according to the present disclosure, a method for selecting an adhesive layer useful for efficiently producing the semiconductor device, a dicing-bonding integrated film including the adhesive layer, and a method for producing the same are provided.
以下，一邊適宜參照圖式，一邊對本揭示的實施方式進行說明。其中，本揭示並不限定於以下的實施方式。以下實施方式中，除特別明示的情況以外，其構成要素（亦包含步驟等）並非必需。各圖中的構成要素的大小為概念性的大小，構成要素之間的大小的相對關係不限於各圖所示的關係。Hereinafter, the embodiments of the present disclosure will be described with reference to the drawings as appropriate. However, the present disclosure is not limited to the following embodiments. In the following embodiments, except for the cases specifically indicated, the components (including steps, etc.) are not essential. The sizes of the components in each figure are conceptual sizes, and the relative relationship between the sizes of the components is not limited to the relationship shown in each figure.
本說明書中的數值及其範圍亦同樣，並不限制本揭示。在本說明書中，使用「～」表示的數值範圍表示包含「～」的前後所記載的數值來分別作為最小值及最大值的範圍。在本說明書中分階段記載的數值範圍中，在一個數值範圍中記載的上限值或下限值可替換為另一分階段記載的數值範圍的上限值或下限值。另外，在本說明書中記載的數值範圍內，該數值範圍的上限值或下限值亦可替換為實施例中所示的值。The same applies to the numerical values and their ranges in this specification, and they do not limit the present disclosure. In this specification, the numerical range represented by "～" indicates a range that includes the numerical values recorded before and after "～" as the minimum value and the maximum value, respectively. In the numerical range recorded in stages in this specification, the upper limit value or lower limit value recorded in one numerical range can be replaced by the upper limit value or lower limit value of the numerical range recorded in another stage. In addition, within the numerical range recorded in this specification, the upper limit value or lower limit value of the numerical range can also be replaced by the value shown in the embodiment.
在本說明書中，(甲基)丙烯酸酯是指丙烯酸酯或與其對應的甲基丙烯酸酯。對於(甲基)丙烯醯基、(甲基)丙烯酸共聚物等其他類似表達亦同樣。In this specification, (meth)acrylate refers to acrylate or its corresponding methacrylate. The same applies to other similar expressions such as (meth)acryl, (meth)acrylic acid copolymer, etc.
＜切割-黏晶一體型膜＞ 圖1的（a）是表示本實施方式的切割-黏晶一體型膜的的平面圖，圖1的（b）是沿著圖1的（a）的B-B線的示意剖面圖。圖2是表示在切割-黏晶一體型膜10（以下，視情況簡稱為「膜10」）的黏著劑層2的周緣部貼附有切割環DR，並且在接著劑層5的表面貼附有晶圓W的狀態的示意圖。膜10適用於包括將晶圓W單片化為多個晶片的切割步驟及其後的拾取步驟的半導體裝置的製造製程（參照圖4的（c）及圖4的（d））。再者，在本實施方式中，例示了在正方形的基材層1上形成一個黏著劑層2與接著劑層5的積層體的形態，但亦可為基材層1具有規定的長度（例如，100 m以上），以沿其長度方向排列的方式，以規定的間隔配置黏著劑層2與接著劑層5的積層體的形態。膜10可更包括覆蓋接著劑層5的覆膜（未圖示）。<Dicing-bonding integrated film> Figure 1 (a) is a plan view of the dicing-bonding integrated film of the present embodiment, and Figure 1 (b) is a schematic cross-sectional view along the B-B line of Figure 1 (a). Figure 2 is a schematic view showing a state in which a dicing ring DR is attached to the periphery of an adhesive layer 2 of a dicing-bonding integrated film 10 (hereinafter referred to as "film 10" as the case may be) and a wafer W is attached to the surface of an adhesive layer 5. The film 10 is suitable for a manufacturing process of a semiconductor device including a dicing step of singulating a wafer W into a plurality of chips and a subsequent pick-up step (refer to Figures 4 (c) and 4 (d)). Furthermore, in the present embodiment, a laminate of an adhesive layer 2 and an adhesive layer 5 is formed on a square substrate layer 1, but the substrate layer 1 may have a predetermined length (e.g., 100 m or more), and the adhesive layer 2 and the adhesive layer 5 may be arranged at predetermined intervals along the length direction. The film 10 may further include a coating (not shown) covering the adhesive layer 5.
膜10依序包括：基材層1；黏著劑層2，具有與基材層1相對的第一表面2a及第一表面2a相反側的第二表面2b；以及接著劑層5，設置成覆蓋黏著劑層2的第二表面2b的中央部。藉由對包含大量金屬粒子的接著劑層5與黏著劑層2的界面照射活性能量射線，提高兩層的密接性。即，照射活性能量射線後的兩層的界面處的T形剝離強度為0.07 N/25 mm以上，亦可為0.1 N/25 mm～0.5 N/25 mm、0.15 N/25 mm～0.4 N/25 mm或0.2 N/25 mm～0.4 N/25 mm。以下，對構成膜10的各層進行說明。The film 10 includes, in order: a substrate layer 1; an adhesive layer 2 having a first surface 2a opposite to the substrate layer 1 and a second surface 2b opposite to the first surface 2a; and an adhesive layer 5 arranged to cover the central portion of the second surface 2b of the adhesive layer 2. By irradiating the interface between the adhesive layer 5 containing a large number of metal particles and the adhesive layer 2 with active energy rays, the adhesion of the two layers is improved. That is, the T-peel strength at the interface of the two layers after irradiation with active energy rays is greater than 0.07 N/25 mm, and may also be 0.1 N/25 mm to 0.5 N/25 mm, 0.15 N/25 mm to 0.4 N/25 mm, or 0.2 N/25 mm to 0.4 N/25 mm. The following describes each layer constituting the film 10.
（接著劑層） 接著劑層5含有（a）金屬粒子，亦可視需要更含有（b）熱硬化性樹脂、（c）硬化劑、及（d）彈性體。接著劑層5為熱硬化性，經過半硬化（B階段）狀態，硬化處理後可成為完全硬化物（C階段）狀態。(Adhesive layer) Adhesive layer 5 contains (a) metal particles, and may further contain (b) thermosetting resin, (c) hardener, and (d) elastomer as needed. Adhesive layer 5 is thermosetting, and after a semi-hardening (B stage) state, it can become a fully hardened (C stage) state after hardening treatment.
由於大量含有的金屬粒子，硬化後的接著劑層5具有優異的熱傳導性。硬化後的接著劑層5的熱傳導率例如為1.5 W/m·K～20 W/m·K。硬化後的接著劑層5的熱傳導率為1.5 W/m·K以上時，可製造散熱性優異的半導體裝置。硬化後的接著劑層5的熱傳導率可為1.6 W/m·K以上、1.7 W/m·K以上、2.0 W/m·K以上、或者2.3 W/m·K以上。再者，此處所說的熱傳導率是指藉由實施例中記載的方法計算出的值。Due to the large amount of metal particles contained, the adhesive layer 5 after hardening has excellent thermal conductivity. The thermal conductivity of the adhesive layer 5 after hardening is, for example, 1.5 W/m·K to 20 W/m·K. When the thermal conductivity of the adhesive layer 5 after hardening is 1.5 W/m·K or more, a semiconductor device with excellent heat dissipation can be manufactured. The thermal conductivity of the adhesive layer 5 after hardening can be 1.6 W/m·K or more, 1.7 W/m·K or more, 2.0 W/m·K or more, or 2.3 W/m·K or more. Furthermore, the thermal conductivity mentioned here refers to the value calculated by the method described in the embodiment.
（a）成分：金屬粒子 （a）成分是用於提高接著劑層5的熱傳導性、提高半導體裝置的散熱性的成分。作為（a）成分，例如可列舉出鎳粒子、銅粒子、銀粒子、鋁粒子。作為（a）成分，亦可使用用金屬包覆基材粒子（例如金屬粒子或樹脂粒子）的表面而得到的粒子。該些可單獨使用一種或將兩種以上組合使用。該些中，自難以氧化的觀點出發，（a）成分可以是銀粒子或用銀包覆金屬粒子（例如銅粒子等）的表面而得的粒子。Component (a): Metal particles Component (a) is a component used to improve the thermal conductivity of the adhesive layer 5 and the heat dissipation of the semiconductor device. Examples of component (a) include nickel particles, copper particles, silver particles, and aluminum particles. Component (a) may also include particles obtained by coating the surface of substrate particles (e.g., metal particles or resin particles) with metal. These may be used alone or in combination of two or more. Among these, component (a) may be silver particles or particles obtained by coating the surface of metal particles (e.g., copper particles) with silver from the viewpoint of being difficult to oxidize.
（a）成分的形狀沒有特別限制，例如為薄片狀、球狀等。（a）成分的平均粒徑可為0.01 μm～10 μm。（a）成分的平均粒徑為0.01 μm以上時，具有能夠防止製作接著劑清漆時的黏度上升，使接著劑層5中含有期望量的（a）成分，並且能夠確保接著劑層5對被黏物的潤濕性而發揮更良好的接著性的傾向。（a）成分的平均粒徑為10 μm以下時，具有膜成形性更優異、藉由添加金屬粒子而能夠進一步提高導電性的傾向。另外，藉由設為此種範圍，具有能夠使接著劑層5的厚度更薄，進而能夠使半導體晶片高積層化，並且能夠防止因金屬粒子自接著劑層5突出而產生晶片裂紋的傾向。（a）成分的平均粒徑可為0.1 μm以上、0.5 μm以上、1.0 μm以上、或者1.5 μm以上，亦可為8.0 μm以下、7.0 μm以下、6.0 μm以下、5.0 μm以下、4.0 μm以下或者3.0 μm以下。（a）成分的平均粒徑為5.0 μm以下時，具有即使不進行物理的平滑化處理，亦容易獲得具有規定的表面粗糙度的接著劑層5的傾向。再者，（a）成分的平均粒徑是指相對於（a）成分整體體積的比率（體積分率）為50%時的粒徑（D50 ）。（a）成分的平均粒徑（D50 ）可藉由使用雷射散射型粒徑測定裝置（例如，麥奇克（MICROTRAC）），利用雷射散射法測定在水中懸浮有（a）成分的懸浮液來求出。The shape of the component (a) is not particularly limited, and may be, for example, flake-shaped or spherical. The average particle size of the component (a) may be 0.01 μm to 10 μm. When the average particle size of the component (a) is 0.01 μm or more, the viscosity of the adhesive varnish can be prevented from increasing, so that the adhesive layer 5 contains a desired amount of the component (a), and the adhesive layer 5 has a tendency to ensure wettability to the adherend and exhibit better adhesion. When the average particle size of the component (a) is 10 μm or less, the film formability is better, and the conductivity tends to be further improved by adding metal particles. In addition, by setting it within such a range, the thickness of the adhesive layer 5 can be made thinner, thereby making the semiconductor chip highly stacked, and it is likely to prevent chip cracks caused by metal particles protruding from the adhesive layer 5. The average particle size of the component (a) may be 0.1 μm or more, 0.5 μm or more, 1.0 μm or more, or 1.5 μm or less, or 8.0 μm or less, 7.0 μm or less, 6.0 μm or less, 5.0 μm or less, 4.0 μm or less, or 3.0 μm or less. When the average particle size of the component (a) is 5.0 μm or less, it is likely that the adhesive layer 5 having a predetermined surface roughness can be easily obtained even without physical smoothing treatment. The average particle size of component (a) refers to the particle size (D 50 ) when the ratio (volume fraction) of component (a) to the total volume is 50%. The average particle size (D 50 ) of component (a) can be determined by measuring a suspension of component (a) in water using a laser scattering type particle size measuring device (e.g., MICROTRAC) by a laser scattering method.
以接著劑層5的總量為基準，（a）成分的含量為75質量%以上。當以接著劑層5的總量為基準，（a）成分的含量為75質量%以上時，能夠提高接著劑層5的熱傳導率，結果，能夠提高散熱性。以接著劑層5的總量為基準，（a）成分的含量可為77質量%以上、80質量%以上、83質量%以上或85質量%以上。（a）成分的含量的上限並無特別限制，以接著劑層5的總量為基準，可為95質量%以下、92質量%以下、或90質量%以下。The content of component (a) is 75% by mass or more based on the total amount of the adhesive layer 5. When the content of component (a) is 75% by mass or more based on the total amount of the adhesive layer 5, the thermal conductivity of the adhesive layer 5 can be improved, and as a result, the heat dissipation can be improved. The content of component (a) can be 77% by mass or more, 80% by mass or more, 83% by mass or more, or 85% by mass or more based on the total amount of the adhesive layer 5. The upper limit of the content of component (a) is not particularly limited, and can be 95% by mass or less, 92% by mass or less, or 90% by mass or less based on the total amount of the adhesive layer 5.
（b）成分：熱硬化性樹脂 （b）成分是具有藉由加熱等在分子間形成三維鍵並硬化的性質，且硬化後顯示接著作用的成分。（b）成分可為環氧樹脂。（b）成分亦可包含25℃下為液狀的環氧樹脂。環氧樹脂只要為分子內具有環氧基者，則可並無特別限制地使用。環氧樹脂亦可在分子內具有兩個以上的環氧基。Component (b): Thermosetting resin Component (b) has the property of forming three-dimensional bonds between molecules and hardening by heating, etc., and exhibits bonding function after hardening. Component (b) may be an epoxy resin. Component (b) may also include an epoxy resin that is liquid at 25°C. Epoxy resins may be used without particular limitation as long as they have an epoxy group in the molecule. Epoxy resins may also have two or more epoxy groups in the molecule.
作為環氧樹脂，例如可列舉：雙酚A型環氧樹脂、雙酚F型環氧樹脂、雙酚S型環氧樹脂、苯酚酚醛清漆型環氧樹脂、甲酚酚醛清漆型環氧樹脂、雙酚A酚醛清漆型環氧樹脂、雙酚F酚醛清漆型環氧樹脂、二苯乙烯型環氧樹脂、含三嗪骨架的環氧樹脂、含芴骨架的環氧樹脂、三苯酚甲烷型環氧樹脂、聯苯型環氧樹脂、伸二甲苯基型環氧樹脂、聯苯基芳烷基型環氧樹脂、萘型環氧樹脂、二環戊二烯型環氧樹脂、多官能苯酚類、蒽等多環芳香族類的二縮水甘油醚化合物等。該些可單獨使用一種或將兩種以上組合使用。該些中，自硬化物的耐熱性等觀點出發，環氧樹脂亦可為雙酚型環氧樹脂或甲酚酚醛清漆型環氧樹脂。Examples of epoxy resins include bisphenol A type epoxy resins, bisphenol F type epoxy resins, bisphenol S type epoxy resins, phenol novolac type epoxy resins, cresol novolac type epoxy resins, bisphenol A novolac type epoxy resins, bisphenol F novolac type epoxy resins, stilbene type epoxy resins, triazine-containing epoxy resins, Epoxy resins containing a fluorene skeleton, trisphenol methane type epoxy resins, biphenyl type epoxy resins, xylyl type epoxy resins, biphenyl aralkyl type epoxy resins, naphthalene type epoxy resins, dicyclopentadiene type epoxy resins, polyfunctional phenols, diglycidyl ether compounds of polycyclic aromatics such as anthracene, etc. These can be used alone or in combination of two or more. Among these, the epoxy resin may be a bisphenol type epoxy resin or a cresol novolac type epoxy resin from the viewpoint of heat resistance of the self-curing material.
環氧樹脂亦可為25℃下為液狀的環氧樹脂。藉由使用此種環氧樹脂，存在容易獲得具有規定表面粗糙度的黏晶膜的傾向。另外，即使在進行物理平滑化處理的情況下，亦存在能夠在更溫和的條件下進行的傾向。作為在25℃下為液狀的環氧樹脂的市售品，例如可列舉EXA-830CRP（商品名、迪愛生股份有限公司（Dainippon Ink and Chemicals，DIC）製造）、YDF-8170C（商品名、日鐵化學&材料股份有限公司）等。The epoxy resin may be a liquid epoxy resin at 25°C. By using such an epoxy resin, a die-bonding film having a predetermined surface roughness tends to be easily obtained. In addition, even when a physical smoothing treatment is performed, it tends to be performed under milder conditions. Examples of commercially available epoxy resins that are liquid at 25°C include EXA-830CRP (trade name, manufactured by Dainippon Ink and Chemicals (DIC)) and YDF-8170C (trade name, manufactured by Nippon Steel Chemicals & Materials Co., Ltd.).
環氧樹脂的環氧當量並無特別限制，可為90 g/eq～300 g/eq、110 g/eq～290 g/eq。若（b）成分的環氧當量處於此種範圍內，則存在維持接著劑層5的整體強度的同時，容易確保形成接著劑層5時的接著劑組成物的流動性的傾向。The epoxy equivalent of the epoxy resin is not particularly limited, and may be 90 g/eq to 300 g/eq, or 110 g/eq to 290 g/eq. If the epoxy equivalent of the component (b) is within such a range, the overall strength of the adhesive layer 5 is maintained, and the fluidity of the adhesive composition when the adhesive layer 5 is formed tends to be easily ensured.
以接著劑層5的總量為基準，（b）成分的含量可為0.1質量%以上、1質量%以上、2質量%以上或3質量%以上，亦可為15質量%以下、12質量%以下、10質量%以下或8質量%以下。The content of component (b) may be 0.1 mass % or more, 1 mass % or more, 2 mass % or more, or 3 mass % or less, or 15 mass % or less, 12 mass % or less, 10 mass % or less, or 8 mass % or less, based on the total amount of the adhesive layer 5.
在（b）成分含有25℃下為液狀的環氧樹脂的情況下，該環氧樹脂相對於（b）成分的質量比（該環氧樹脂的質量/（b）成分的總質量）以百分率計可為10%～100%、40%～100%、60%～100%、或80%～100%。在（b）成分含有25℃下為液狀的環氧樹脂的情況下，以接著劑層5的總量為基準，該環氧樹脂的含量可為1質量%以上、2質量%以上、3質量%以上、或4質量%以上。該環氧樹脂的含量亦可為15質量%以下、12質量%以下、10質量%以下、或8質量%以下。When the component (b) contains an epoxy resin that is liquid at 25°C, the mass ratio of the epoxy resin to the component (b) (mass of the epoxy resin/total mass of the component (b)) may be 10% to 100%, 40% to 100%, 60% to 100%, or 80% to 100% in percentage. When the component (b) contains an epoxy resin that is liquid at 25°C, the content of the epoxy resin may be 1% by mass or more, 2% by mass or more, 3% by mass or more, or 4% by mass or more based on the total amount of the adhesive layer 5. The content of the epoxy resin may also be 15% by mass or less, 12% by mass or less, 10% by mass or less, or 8% by mass or less.
（c）成分：硬化劑 （c）成分可為能夠成為環氧樹脂的硬化劑的酚樹脂。酚樹脂只要在分子內具有酚性羥基，則可無特別限制地使用。作為酚樹脂，例如可列舉：使苯酚、甲酚、間苯二酚（resorcin）、鄰苯二酚、雙酚A、雙酚F、苯基苯酚、胺基苯酚等苯酚類及/或α-萘酚、β-萘酚、二羥基萘等萘酚類與甲醛等具有醛基的化合物於酸性觸媒下縮合或共縮合而獲得的酚醛清漆型酚樹脂、由烯丙基化雙酚A、烯丙基化雙酚F、烯丙基化萘二酚、苯酚酚醛清漆、苯酚等苯酚類及/或萘酚類與二甲氧基對二甲苯或雙(甲氧基甲基)聯苯所合成的苯酚芳烷基樹脂、萘酚芳烷基樹脂、聯苯基芳烷基型酚樹脂、苯基芳烷基型酚樹脂等。該些可單獨使用一種，亦可將兩種以上組合使用。Component (c): Hardener Component (c) may be a phenolic resin that can serve as a hardener for epoxy resin. Any phenolic resin may be used without particular limitation as long as it has a phenolic hydroxyl group in the molecule. Examples of the phenol resin include novolac-type phenol resins obtained by condensing or co-condensing phenols such as phenol, cresol, resorcin, o-catechol, bisphenol A, bisphenol F, phenylphenol, and aminophenol and/or naphthols such as α-naphthol, β-naphthol, and dihydroxynaphthalene with a compound having an aldehyde group such as formaldehyde under an acidic catalyst; phenol aralkyl resins synthesized from phenols such as allylated bisphenol A, allylated bisphenol F, allylated naphthenediol, phenol novolac, phenol and/or naphthols with dimethoxy-p-xylene or bis(methoxymethyl)biphenyl; naphthol aralkyl resins; biphenyl aralkyl-type phenol resins; and phenyl aralkyl-type phenol resins. These may be used alone or in combination of two or more.
酚樹脂的羥基當量可為40 g/eq～300 g/eq、70 g/eq～290 g/eq、或100 g/eq～280 g/eq。若酚樹脂的羥基當量為40 g/eq以上，則有膜的儲存彈性係數進一步提高的傾向，若為300 g/eq以下，則可防止因產生發泡、逸氣等而引起的不良情況。The hydroxyl equivalent of the phenolic resin may be 40 g/eq to 300 g/eq, 70 g/eq to 290 g/eq, or 100 g/eq to 280 g/eq. If the hydroxyl equivalent of the phenolic resin is 40 g/eq or more, the storage elastic coefficient of the film tends to be further improved, and if it is 300 g/eq or less, undesirable conditions caused by the generation of foaming, outgassing, etc. can be prevented.
自硬化性的觀點出發，作為（b）成分的環氧樹脂的環氧當量與作為（c）成分的酚樹脂的羥基當量的比（作為（b）成分的環氧樹脂的環氧當量/作為（c）成分的酚樹脂的羥基當量）可為：0.30/0.70～0.70/0.30、0.35/0.65～0.65/0.35、0.40/0.60～0.60/0.40、或0.45/0.55～0.55/0.45。若該當量比為0.30/0.70以上，則有獲得更充分的硬化性的傾向。若該當量比為0.70/0.30以下，則可防止黏度變得過高，且可獲得更充分的流動性。From the viewpoint of self-hardening property, the ratio of the epoxy equivalent of the epoxy resin as the component (b) to the hydroxyl equivalent of the phenol resin as the component (c) (epoxy equivalent of the epoxy resin as the component (b)/hydroxyl equivalent of the phenol resin as the component (c)) may be 0.30/0.70 to 0.70/0.30, 0.35/0.65 to 0.65/0.35, 0.40/0.60 to 0.60/0.40, or 0.45/0.55 to 0.55/0.45. If the equivalent ratio is 0.30/0.70 or more, more sufficient hardening property tends to be obtained. When the equivalent ratio is 0.70/0.30 or less, the viscosity can be prevented from becoming too high and more sufficient fluidity can be obtained.
以接著劑層5的總量為基準，（c）成分的含量可為0.1質量%以上、1質量%以上、2質量%以上或3質量%以上，亦可為15質量%以下、12質量%以下、10質量%以下或8質量%以下。The content of component (c) may be 0.1 mass % or more, 1 mass % or more, 2 mass % or more, or 3 mass % or less, or 15 mass % or less, 12 mass % or less, 10 mass % or less, or 8 mass % or less, based on the total amount of adhesive layer 5.
（d）成分：彈性體 作為（d）成分，例如可列舉聚醯亞胺樹脂、丙烯酸樹脂、胺基甲酸酯樹脂、聚苯醚樹脂、聚醚醯亞胺樹脂、苯氧基樹脂、改質聚苯醚樹脂等具有交聯性官能基者。此處，丙烯酸樹脂是指含有源自(甲基)丙烯酸酯的結構單元的聚合物。丙烯酸樹脂可以是含有源自具有環氧基、醇性羥基或酚性羥基、羧基等交聯性官能基的(甲基)丙烯酸酯的結構單元來作為結構單元的聚合物。另外，丙烯酸樹脂亦可為(甲基)丙烯酸酯與丙烯腈的共聚物等丙烯酸橡膠。該些可單獨使用一種，亦可將兩種以上組合使用。(d) Component: Elastomer As the (d) component, for example, polyimide resins, acrylic resins, urethane resins, polyphenylene ether resins, polyetherimide resins, phenoxy resins, modified polyphenylene ether resins, etc. having crosslinking functional groups can be listed. Here, acrylic resin refers to a polymer containing structural units derived from (meth)acrylate. The acrylic resin can be a polymer containing structural units derived from (meth)acrylate having crosslinking functional groups such as epoxy groups, alcoholic hydroxyl groups or phenolic hydroxyl groups, carboxyl groups, etc. as structural units. In addition, the acrylic resin can also be an acrylic rubber such as a copolymer of (meth)acrylate and acrylonitrile. These can be used alone or in combination of two or more.
作為丙烯酸樹脂的市售品，例如可列舉：SG-70L、SG-708-6、WS-023 EK30、SG-280 EK23、HTR-860P-3、HTR-860P-3CSP、HTR-860P-3CSP-3DB（均為長瀨化成（Nagase ChemteX）股份有限公司製造）等。Examples of commercially available acrylic resins include SG-70L, SG-708-6, WS-023 EK30, SG-280 EK23, HTR-860P-3, HTR-860P-3CSP, and HTR-860P-3CSP-3DB (all manufactured by Nagase ChemteX Co., Ltd.).
（d）成分的玻璃轉移溫度（Tg）可為-50℃～50℃或-30℃～20℃。若丙烯酸樹脂的Tg為-50℃以上，則接著劑層5的黏性降低，因此存在操作性進一步提高的傾向。若丙烯酸樹脂的Tg為50℃以下，則存在能夠更充分地確保形成接著劑層5時的接著劑組成物的流動性的傾向。此處，（d）成分的玻璃轉移溫度（Tg）是指使用熱示差掃描熱量計（示差掃描熱析儀（Differential Scanning Calorimeter，DSC））（例如，理學（Rigaku）股份有限公司製造、商品名：賽摩普拉斯（Thermo Plus） 2）測定而得的值。The glass transition temperature (Tg) of the component (d) may be -50°C to 50°C or -30°C to 20°C. If the Tg of the acrylic resin is -50°C or higher, the viscosity of the adhesive layer 5 decreases, so there is a tendency for the workability to be further improved. If the Tg of the acrylic resin is 50°C or lower, there is a tendency for the fluidity of the adhesive composition when the adhesive layer 5 is formed to be more sufficiently ensured. Here, the glass transition temperature (Tg) of the component (d) refers to a value measured using a thermal differential scanning calorimeter (DSC) (for example, manufactured by Rigaku Co., Ltd., trade name: Thermo Plus 2).
（d）成分的重量平均分子量（Mw）可為5萬～120萬、10萬～120萬、或30萬～90萬。（d）成分的重量平均分子量為5萬以上時，存在成膜性更優異的傾向。（d）成分的重量平均分子量為120萬以下時，存在形成接著劑層5時的接著劑組成物的流動性更優異的傾向。再者，重量平均分子量（Mw）為藉由凝膠滲透層析法（Gel Permeation Chromatography，GPC）測定，且使用基於標準聚苯乙烯的校準曲線換算而得的值。The weight average molecular weight (Mw) of the component (d) may be 50,000 to 1.2 million, 100,000 to 1.2 million, or 300,000 to 900,000. When the weight average molecular weight of the component (d) is 50,000 or more, the film-forming property tends to be better. When the weight average molecular weight of the component (d) is 1.2 million or less, the fluidity of the adhesive composition when the adhesive layer 5 is formed tends to be better. The weight average molecular weight (Mw) is measured by gel permeation chromatography (GPC) and is converted using a calibration curve based on standard polystyrene.
（d）成分的重量平均分子量（Mw）的測定裝置、測定條件等如以下所述。 泵：L-6000（日立製作所股份有限公司製造） 管柱：將吉爾帕（Gelpack）GL-R440（日立化成股份有限公司製造）、吉爾帕（Gelpack）GL-R450（日立化成股份有限公司製造）、以及吉爾帕GL-R400M（日立化成股份有限公司製造）（各為10.7 mm（直徑）×300 mm）依序連結而成的管柱 溶離液：四氫呋喃（以下稱為「THF（tetrahydrofuran）」。） 樣品：將試樣120 mg溶解在THF5 mL中而得的溶液 流速：1.75 mL/分鐘(d) The measuring device and measuring conditions of the weight average molecular weight (Mw) of the component are as follows. Pump: L-6000 (manufactured by Hitachi, Ltd.) Column: A column formed by connecting Gelpack GL-R440 (manufactured by Hitachi Chemical, Ltd.), Gelpack GL-R450 (manufactured by Hitachi Chemical, Ltd.), and Gelpack GL-R400M (manufactured by Hitachi Chemical, Ltd.) (each 10.7 mm (diameter) × 300 mm) in sequence Eluent: Tetrahydrofuran (hereinafter referred to as "THF (tetrahydrofuran)") Sample: A solution obtained by dissolving 120 mg of the sample in 5 mL of THF Flow rate: 1.75 mL/min
以接著劑層5的總量為基準，（d）成分的含量可為0.1質量%以上、0.5質量%以上、1質量%以上或2質量%以上，亦可為10質量%以下、8質量%以下、6質量%以下或5質量%以下。The content of component (d) may be 0.1 mass % or more, 0.5 mass % or more, 1 mass % or more, or 2 mass % or less, or 10 mass % or less, 8 mass % or less, 6 mass % or less, or 5 mass % or less, based on the total amount of the adhesive layer 5.
（e）成分：硬化促進劑 接著劑層5亦可更含有（e）硬化促進劑。藉由使接著劑層5含有（e）成分，存在能夠進一步兼顧接著性及連接可靠性的傾向。作為（e）成分，例如可列舉：咪唑類及其衍生物、有機磷系化合物、二級胺類、三級胺類、四級銨鹽等。該些可單獨使用一種，亦可將兩種以上組合使用。該些中，自反應性的觀點出發，（e）成分可為咪唑類及其衍生物。(e) Component: Hardening accelerator The adhesive layer 5 may further contain (e) a hardening accelerator. By making the adhesive layer 5 contain (e) component, there is a tendency to be able to further take into account both the adhesiveness and the connection reliability. As the (e) component, for example, imidazoles and their derivatives, organic phosphorus compounds, diamines, tertiary amines, quaternary ammonium salts, etc. can be listed. These can be used alone or in combination of two or more. Among these, from the viewpoint of self-reactivity, the (e) component can be imidazoles and their derivatives.
作為咪唑類，例如可列舉：2-甲基咪唑、1-苄基-2-甲基咪唑、1-氰基乙基-2-苯基咪唑、1-氰基乙基-2-甲基咪唑等。該些可單獨使用一種，亦可將兩種以上組合使用。Examples of imidazoles include 2-methylimidazole, 1-benzyl-2-methylimidazole, 1-cyanoethyl-2-phenylimidazole, and 1-cyanoethyl-2-methylimidazole. These may be used alone or in combination of two or more.
（e）成分的含量以接著劑層5的總量為基準可為0.001質量%～1質量%。（e）成分的含量在此種範圍時，存在能夠進一步兼顧接著性及連接可靠性的傾向。The content of the component (e) may be 0.001 mass % to 1 mass % based on the total amount of the adhesive layer 5. When the content of the component (e) is within this range, there is a tendency that both the adhesiveness and the connection reliability can be better balanced.
接著劑層5可更含有偶合劑、抗氧化劑、流變控制劑、調平劑等作為（a）成分～（e）成分以外的其他成分。作為偶合劑，例如可列舉γ-脲基丙基三乙氧基矽烷、γ-巰基丙基三甲氧基矽烷、3-苯基胺基丙基三甲氧基矽烷、3-(2-胺基乙基)胺基丙基三甲氧基矽烷等。以接著劑層5的總量為基準，其他成分的含量可為0.01質量%～3質量%。The adhesive layer 5 may further contain a coupling agent, an antioxidant, a rheology control agent, a leveling agent, etc. as other components other than components (a) to (e). Examples of coupling agents include γ-ureidopropyltriethoxysilane, γ-butylpropyltrimethoxysilane, 3-phenylaminopropyltrimethoxysilane, and 3-(2-aminoethyl)aminopropyltrimethoxysilane. The content of other components may be 0.01 mass % to 3 mass % based on the total amount of the adhesive layer 5.
接著劑層5可藉由將含有上述的（a）成分、視需要的（b）成分～（e）成分及其它成分的接著劑組成物形成為膜狀來製作。此種接著劑層5可藉由將接著劑組成物塗佈在支撐膜（未圖示）上而形成。接著劑組成物可作為用溶劑稀釋的接著劑清漆來使用。在使用接著劑清漆的情況下，可藉由將接著劑清漆塗佈在支撐膜上，將溶劑加熱乾燥而除去來形成接著劑層5。The adhesive layer 5 can be prepared by forming an adhesive composition containing the above-mentioned component (a), components (b) to (e) as needed, and other components into a film. Such an adhesive layer 5 can be formed by applying the adhesive composition on a support film (not shown). The adhesive composition can be used as an adhesive varnish diluted with a solvent. When using an adhesive varnish, the adhesive layer 5 can be formed by applying the adhesive varnish on a support film and removing the solvent by heating and drying.
溶劑只要能夠溶解（a）成分以外的成分，則沒有特別限制。作為溶劑，例如可列舉：甲苯、二甲苯、均三甲苯、枯烯、對異丙基甲苯等芳香族烴；己烷、庚烷等脂肪族烴；甲基環己烷等環狀烷烴；四氫呋喃、1,4-二噁烷等環狀醚；丙酮、甲基乙基酮、甲基異丁基酮、環己酮、4-羥基-4-甲基-2-戊酮等酮；乙酸甲酯、乙酸乙酯、乙酸丁酯、乳酸甲酯、乳酸乙酯、γ-丁內酯等酯；碳酸伸乙酯、碳酸伸丙酯等碳酸酯；N,N-二甲基甲醯胺、N,N-二甲基乙醯胺、N-甲基-2-吡咯啶酮等醯胺等。該些可單獨使用一種，亦可將兩種以上組合使用。該些中，自溶解性及沸點的觀點出發，溶劑可以是甲苯、二甲苯、甲基乙基酮、甲基異丁基酮或環己酮。以接著劑清漆的總質量為基準，接著劑清漆中的固體成分濃度可為10質量%～80質量%。The solvent is not particularly limited as long as it can dissolve the components other than component (a). Examples of the solvent include aromatic hydrocarbons such as toluene, xylene, mesitylene, cumene, and p-isopropyltoluene; aliphatic hydrocarbons such as hexane and heptane; cyclic alkanes such as methylcyclohexane; cyclic ethers such as tetrahydrofuran and 1,4-dioxane; ketones such as acetone, methyl ethyl ketone, methyl isobutyl ketone, cyclohexanone, and 4-hydroxy-4-methyl-2-pentanone; esters such as methyl acetate, ethyl acetate, butyl acetate, methyl lactate, ethyl lactate, and γ-butyrolactone; carbonates such as ethyl carbonate and propyl carbonate; amides such as N,N-dimethylformamide, N,N-dimethylacetamide, and N-methyl-2-pyrrolidone; and the like. These can be used alone or in combination of two or more. Among these, from the viewpoint of solubility and boiling point, the solvent can be toluene, xylene, methyl ethyl ketone, methyl isobutyl ketone or cyclohexanone. The solid content concentration in the adhesive varnish can be 10 mass % to 80 mass % based on the total mass of the adhesive varnish.
接著劑清漆可藉由將（a）成分～（e）成分、其他成分及溶劑混合、混煉來製備。再者，各成分的混合、混煉的順序沒有特別限制，可適當設定。混合及混煉可將通常的攪拌機、擂潰機、三輥磨機、球磨機、珠磨機等分散機適當組合來進行。製備接著劑清漆後，可藉由真空脫氣等除去清漆中的氣泡。The adhesive varnish can be prepared by mixing and kneading the components (a) to (e), other components and a solvent. The order of mixing and kneading the components is not particularly limited and can be set appropriately. Mixing and kneading can be performed by appropriately combining a common agitator, a pestle, a three-roll mill, a ball mill, a bead mill or other disperser. After preparing the adhesive varnish, air bubbles in the varnish can be removed by vacuum degassing or the like.
作為供塗佈所述清漆的支撐膜，沒有特別限制，例如可列舉：聚四氟乙烯、聚乙烯、聚丙烯、聚甲基戊烯、聚對苯二甲酸乙二酯、聚醯亞胺等膜。支撐膜的厚度例如可為10 μm～200 μm或20 μm～170 μm。The supporting film for coating the varnish is not particularly limited, and examples thereof include films of polytetrafluoroethylene, polyethylene, polypropylene, polymethylpentene, polyethylene terephthalate, polyimide, etc. The thickness of the supporting film may be, for example, 10 μm to 200 μm or 20 μm to 170 μm.
作為將接著劑清漆塗佈在支撐膜上的方法，可使用公知的方法，例如可列舉：刀塗法、輥塗法、噴塗法、凹版塗佈法、棒塗法、簾塗法等。加熱乾燥的條件只要是所使用的溶劑充分揮發的條件即可，沒有特別限制，例如可為在50℃～200℃下為0.1分鐘～90分鐘。As a method for applying the adhesive varnish on the support film, a known method can be used, for example, knife coating, roller coating, spray coating, gravure coating, rod coating, curtain coating, etc. The heat drying conditions are not particularly limited as long as the solvent used is sufficiently volatilized, and for example, it can be 0.1 minute to 90 minutes at 50°C to 200°C.
接著劑層5的厚度可根據用途進行適當調整，例如，可為3 μm～200 μm。若接著劑層5的厚度為3 μm以上，則存在接著力變得充分的傾向，若為200 μm以下，則存在散熱性變得充分的傾向。自接著力及半導體裝置的薄型化的觀點出發，接著劑層5的厚度可為10 μm～100 μm或120 μm～75 μm。The thickness of the adhesive layer 5 can be appropriately adjusted according to the application, and can be, for example, 3 μm to 200 μm. If the thickness of the adhesive layer 5 is 3 μm or more, there is a tendency that the adhesive force becomes sufficient, and if it is 200 μm or less, there is a tendency that the heat dissipation becomes sufficient. From the viewpoint of the adhesive force and the thinning of the semiconductor device, the thickness of the adhesive layer 5 can be 10 μm to 100 μm or 120 μm to 75 μm.
在接著劑層5中，第一表面5a的表面粗糙度例如為1.0 μm以下，第二表面5b的表面粗糙度例如為1.0 μm以下。將與黏著劑層2的第二表面2b相接的表面設為第一表面5a，將貼合有晶圓W的一側的面設為第二表面5b，以下進行說明。再者，此處所說的表面粗糙度是指算術平均粗糙度Ra，「算術平均粗糙度Ra」是指用實施例記載的方法計算出的值。測定倍率可以是50倍～100倍。In the adhesive layer 5, the surface roughness of the first surface 5a is, for example, less than 1.0 μm, and the surface roughness of the second surface 5b is, for example, less than 1.0 μm. The surface in contact with the second surface 2b of the adhesive layer 2 is set as the first surface 5a, and the surface on the side of the wafer W is bonded is set as the second surface 5b, which is described below. Furthermore, the surface roughness mentioned here refers to the arithmetic mean roughness Ra, and the "arithmetic mean roughness Ra" refers to the value calculated by the method described in the embodiment. The measurement magnification can be 50 times to 100 times.
第二表面5b在藉由將接著劑清漆塗佈在支撐膜上、將溶劑加熱乾燥而除去的製造方法來形成的情況下，通常，與接著劑清漆的含有成分無關地，具有該面的表面粗糙度成為1.0 μm以下的傾向。另一方面，第一表面5a在藉由將接著劑清漆塗佈在支撐膜上、將溶劑加熱乾燥而除去的製造方法來形成的情況下，通常，具有受到接著劑清漆的含有成分的影響的傾向。第一表面5a例如藉由使用平均粒徑5.0 μm以下的粒子、及/或球狀粒子的（a）成分，可將該表面的表面粗糙度調整為1.0 μm以下。再者，在第一表面5a的表面粗糙度超過1.0 μm的情況下，例如可藉由進行物理平滑化處理，將其表面粗糙度調整為1.0 μm以下。When the second surface 5b is formed by a manufacturing method in which an adhesive varnish is applied on a support film and the solvent is removed by heat drying, the surface roughness of the surface is usually 1.0 μm or less, regardless of the components contained in the adhesive varnish. On the other hand, when the first surface 5a is formed by a manufacturing method in which an adhesive varnish is applied on a support film and the solvent is removed by heat drying, the surface roughness of the first surface 5a is usually affected by the components contained in the adhesive varnish. The surface roughness of the first surface 5a can be adjusted to 1.0 μm or less by using, for example, particles having an average particle size of 5.0 μm or less and/or spherical particles (a). Furthermore, when the surface roughness of the first surface 5a exceeds 1.0 μm, the surface roughness can be adjusted to 1.0 μm or less by, for example, performing a physical smoothing treatment.
平滑化處理例如能夠藉由隔著聚乙烯膜（PE（Polyethylene）膜）、聚對苯二甲酸乙二酯膜（PET（polyethylene terephthalate）膜）等按壓接著劑層5的第一表面5a來進行。在此種情況下，亦可一邊加溫接著劑層5一邊進行。按壓例如可使用橡膠輥、金屬輥等進行。按壓時的負荷可為0.01 Mpa～3.0 MPa或0.3 MPa～1.0 MPa。若按壓時的負荷為0.01 Mpa以上，則存在獲得充分的平滑化效果的傾向，若按壓時的負荷為3.0 MPa以下，則存在減輕裝置的負擔而能夠進行連續的處理的傾向。按壓時的加溫溫度可為室溫（20℃）～200℃或50℃～140℃。若按壓時的加溫溫度為200℃以下，則存在能夠抑制接著劑層5的硬化反應進行的傾向。再者，藉由（b）成分在規定範圍內含有25℃下為液狀的環氧樹脂，能夠在更溫和的條件下進行平滑化處理。藉由調整平滑化處理的條件（例如，溫度和壓力），能夠提高接著劑層5的第一表面5a與黏著劑層2的第二表面2b的T形剝離強度。平滑化處理的條件例如是溫度140℃及壓力0.5 MPa。除了平滑化處理的條件之外，作為影響T形剝離強度的因素，還可列舉膜10的活性能量射線的照射量、以及老化條件（例如，溫度以及期間）等。老化條件例如是溫度40℃及期間4天。The smoothing treatment can be performed, for example, by pressing the first surface 5a of the adhesive layer 5 through a polyethylene film (PE (Polyethylene) film), a polyethylene terephthalate film (PET (polyethylene terephthalate) film), or the like. In this case, the treatment can also be performed while heating the adhesive layer 5. Pressing can be performed, for example, using a rubber roller, a metal roller, or the like. The load during pressing can be 0.01 MPa to 3.0 MPa or 0.3 MPa to 1.0 MPa. If the load during pressing is greater than 0.01 MPa, there is a tendency to obtain a sufficient smoothing effect, and if the load during pressing is less than 3.0 MPa, there is a tendency to reduce the burden on the device and enable continuous treatment. The heating temperature during pressing can be room temperature (20°C) to 200°C or 50°C to 140°C. If the heating temperature during pressing is below 200°C, there is a tendency to suppress the hardening reaction of the adhesive layer 5. Furthermore, by containing an epoxy resin that is liquid at 25°C in the specified range as component (b), the smoothing treatment can be performed under milder conditions. By adjusting the conditions of the smoothing treatment (for example, temperature and pressure), the T-peel strength of the first surface 5a of the adhesive layer 5 and the second surface 2b of the adhesive layer 2 can be increased. The conditions of the smoothing treatment are, for example, a temperature of 140°C and a pressure of 0.5 MPa. In addition to the smoothing treatment conditions, factors that affect the T-peel strength include the amount of active energy radiation irradiated to the film 10 and aging conditions (e.g., temperature and duration). The aging conditions are, for example, a temperature of 40° C. and a duration of 4 days.
第一表面5a的表面粗糙度較佳為大於第二表面5b的表面粗糙度。藉由將此種接著劑層5適用於膜10，具有切割時的接著劑層5與黏著劑層2的密接力更優異、能夠抑制晶片飛散等的傾向。The surface roughness of the first surface 5a is preferably greater than the surface roughness of the second surface 5b. By applying such an adhesive layer 5 to the film 10, the adhesive layer 5 and the adhesive layer 2 have a better adhesion during dicing, and there is a tendency to suppress chip scattering.
自防止由表面粗糙度引起的接著性降低的觀點出發，第一表面5a的表面粗糙度為1.0 μm以下，例如亦可為0.9 μm以下、0.8 μm以下、或0.75 μm以下。自防止由表面的平滑性變得過高而引起的錨定效果降低的觀點出發，第一表面5a的表面粗糙度可為0.25 μm以上、0.3 μm以上、0.4 μm以上、0.5 μm以上、0.6 μm以上、或0.65 μm以上。自同樣的觀點出發，第二表面5b的表面粗糙度例如可為0.9 μm以下、0.8 μm以下、0.7 μm以下、或小於0.65 μm，亦可為0.25 μm以上、0.3 μm以上、0.4 μm以上、或0.45 μm以上。From the viewpoint of preventing the decrease in adhesion due to surface roughness, the surface roughness of the first surface 5a is 1.0 μm or less, and may be, for example, 0.9 μm or less, 0.8 μm or less, or 0.75 μm or less. From the viewpoint of preventing the decrease in anchoring effect due to excessive surface smoothness, the surface roughness of the first surface 5a may be 0.25 μm or more, 0.3 μm or more, 0.4 μm or more, 0.5 μm or more, 0.6 μm or more, or 0.65 μm or more. From the same viewpoint, the surface roughness of the second surface 5b may be, for example, 0.9 μm or less, 0.8 μm or less, 0.7 μm or less, or less than 0.65 μm, and may be 0.25 μm or more, 0.3 μm or more, 0.4 μm or more, or 0.45 μm or more.
再者，在測定第一表面5a（與黏著劑層2接觸的一側的面）的表面粗糙度時，例如，以第二表面5b與半導體晶圓、基材等接觸的方式在40℃～80℃左右層壓並轉印膜10，藉此使第一表面5a露出即可。Furthermore, when measuring the surface roughness of the first surface 5a (the surface on the side in contact with the adhesive layer 2), for example, the transfer film 10 is laminated at about 40°C to 80°C in a manner such that the second surface 5b is in contact with a semiconductor wafer, a substrate, etc., thereby exposing the first surface 5a.
（黏著劑層） 黏著劑層2只要包含在切割帶的領域中使用的黏著劑即可。即，黏著劑層2可包含感壓型黏著劑，亦可包含藉由照射活性能量（例如紫外線）而硬化的黏著劑。在黏著劑層2含有具有對活性能量射線的照射具有反應性的碳-碳雙鍵的樹脂的情況下，藉由活性能量射線的照射，黏著劑層2被改質，藉此，與存在於接著劑層5的第一表面5a的金屬粒子的密接性容易提高。(Adhesive layer) The adhesive layer 2 only needs to contain an adhesive used in the field of dicing tapes. That is, the adhesive layer 2 may contain a pressure-sensitive adhesive or an adhesive that hardens by irradiation with active energy (e.g., ultraviolet rays). When the adhesive layer 2 contains a resin having a carbon-carbon double bond that is reactive to irradiation with active energy rays, the adhesive layer 2 is modified by irradiation with active energy rays, thereby easily improving the adhesion with the metal particles present on the first surface 5a of the adhesive layer 5.
作為構成基材層1的膜，例如可列舉：聚四氟乙烯膜、聚對苯二甲酸乙二酯膜、聚乙烯膜、聚丙烯膜、聚甲基戊烯膜、聚醯亞胺膜等塑膠膜等。另外，基材層1可視需要實施底漆塗佈、紫外線（ultraviolet，UV）處理、電暈放電處理、研磨處理、蝕刻處理等表面處理。Examples of the film constituting the substrate layer 1 include plastic films such as polytetrafluoroethylene film, polyethylene terephthalate film, polyethylene film, polypropylene film, polymethylpentene film, and polyimide film. In addition, the substrate layer 1 may be subjected to surface treatments such as primer coating, ultraviolet (UV) treatment, corona discharge treatment, polishing treatment, and etching treatment as required.
＜切割-黏晶一體型膜的製造方法＞ 膜10對於有效率地製造具有優異的散熱性的半導體裝置而言有用。膜10經過以下的步驟來製造。 ·準備包括基材層1、及設置在基材層1的其中一個面上的黏著劑層2的切割膜3的步驟。 ·在黏著劑層2的表面上形成接著劑層5，從而獲得切割-黏晶一體型膜的步驟。 ·藉由向切割-黏晶一體型膜照射活性能量射線，獲得增大了黏著劑層與接著劑層的T形剝離強度的膜10的步驟。<Method for manufacturing a dicing-die-bonding integrated film> The film 10 is useful for efficiently manufacturing a semiconductor device having excellent heat dissipation. The film 10 is manufactured through the following steps. · A step of preparing a dicing film 3 including a substrate layer 1 and an adhesive layer 2 provided on one surface of the substrate layer 1. · A step of forming an adhesive layer 5 on the surface of the adhesive layer 2 to obtain a dicing-die-bonding integrated film. · A step of obtaining a film 10 having increased T-peel strength between the adhesive layer and the adhesive layer by irradiating the dicing-die-bonding integrated film with active energy rays.
活性能量射線對膜10的照射量例如為10 mJ/cm2 ～1000 mJ/cm2 ，亦可為100 mJ/cm2 ～700 mJ/cm2 或200 mJ/cm2 ～500 mJ/cm2 。The irradiation dose of the active energy ray to the film 10 is, for example, 10 mJ/cm 2 to 1000 mJ/cm 2 , or may be 100 mJ/cm 2 to 700 mJ/cm 2 or 200 mJ/cm 2 to 500 mJ/cm 2 .
＜接著劑層的選定方法＞ 在製造膜10之前，可以如下方式選定較佳的接著劑層（黏晶膜）。即，藉由實施包括以下步驟的選定方法，可選定照射活性能量射線後的T形剝離強度B大於照射活性能量射線前的T形剝離強度A的接著劑層。 ·準備包括基材層1、及設置在基材層1的其中一個面上的黏著劑層2的切割膜3的步驟。 ·在黏著劑層2的表面上形成接著劑層，從而獲得切割-黏晶一體型膜的步驟。 ·向所述切割-黏晶一體型膜照射活性能量射線的步驟。 ·測定照射活性能量射線前的黏著劑層2與接著劑層的T形剝離強度A的步驟。 ·測定照射活性能量射線後的黏著劑層2與接著劑層的T形剝離強度B的步驟。<Adhesive layer selection method> Before manufacturing the film 10, a preferred adhesive layer (die bonding film) can be selected as follows. That is, by implementing a selection method including the following steps, an adhesive layer having a T-shaped peel strength B after irradiation with active energy rays greater than a T-shaped peel strength A before irradiation with active energy rays can be selected. · A step of preparing a dicing film 3 including a substrate layer 1 and an adhesive layer 2 provided on one surface of the substrate layer 1. · A step of forming an adhesive layer on the surface of the adhesive layer 2 to obtain a dicing-die bonding integrated film. · A step of irradiating the dicing-die bonding integrated film with active energy rays. · A step of measuring the T-shaped peel strength A of the adhesive layer 2 and the adhesive layer before irradiation with active energy rays. · A step of measuring the T-shaped peel strength B of the adhesive layer 2 and the adhesive layer after irradiation with active energy rays.
＜半導體裝置及其製造方法＞ 圖3是示意性表示半導體裝置的一例的剖面圖。該圖所示的半導體裝置100包括基板70；積層在基板70的表面上的四個晶片S1、S2、S3、S4；將基板70的表面上的電極（未圖示）與四個晶片S1、S2、S3、S4電連接的導線W1、導線W2、導線W3、導線W4；以及將該些密封的密封層50。<Semiconductor device and its manufacturing method> Figure 3 is a cross-sectional view schematically showing an example of a semiconductor device. The semiconductor device 100 shown in the figure includes a substrate 70; four chips S1, S2, S3, and S4 stacked on the surface of the substrate 70; wires W1, wires W2, wires W3, and wires W4 that electrically connect the electrodes on the surface of the substrate 70 (not shown) to the four chips S1, S2, S3, and S4; and a sealing layer 50 that seals them.
基板70例如是有機基板，亦可為引線框架等金屬基板。關於基板70，自抑制半導體裝置100的翹曲的觀點出發，基板70的厚度例如為70 μm～140 μm，亦可為80 μm～100 μm。The substrate 70 is, for example, an organic substrate, or a metal substrate such as a lead frame. From the viewpoint of suppressing warping of the semiconductor device 100, the thickness of the substrate 70 is, for example, 70 μm to 140 μm, or 80 μm to 100 μm.
四個晶片S1、S2、S3、S4經由接著劑片5P的硬化物5C而積層。俯視下的晶片S1、晶片S2、晶片S3、晶片S4的形狀例如是正方形或長方形。晶片S1、晶片S2、晶片S3、晶片S4的面積為9 mm2 以下，亦可為0.1 mm2 ～4 mm2 或0.1 mm2 ～2 mm2 。晶片S1、晶片S2、晶片S3、晶片S4的一邊的長度例如為3 mm以下，亦可為0.1 mm～2.0 mm或0.1 mm～1.0 mm。晶片S1、晶片S2、晶片S3、晶片S4的厚度例如為10 μm～170 μm，亦可為25 μm～100 μm。再者，四個晶片S1、S2、S3、S4的一邊的長度可相同，亦可相互不同，關於厚度亦同樣。Four chips S1, S2, S3, and S4 are stacked via a hardened material 5C connected to a tablet 5P. The shapes of chips S1, S2, S3, and S4 when viewed from above are, for example, square or rectangular. The areas of chips S1, S2, S3, and S4 are less than 9 mm2 , and may be 0.1 mm2 to 4 mm2 or 0.1 mm2 to 2 mm2 . The length of one side of chips S1, S2, S3, and S4 is, for example, less than 3 mm, and may be 0.1 mm to 2.0 mm or 0.1 mm to 1.0 mm. The thickness of chips S1, S2, S3, and S4 is, for example, 10 μm to 170 μm, and may be 25 μm to 100 μm. Furthermore, the lengths of one side of the four chips S1, S2, S3, and S4 may be the same or different from each other, and the same applies to the thickness.
半導體裝置100的製造方法包括：準備上述膜10的步驟；對膜10的接著劑層5黏貼晶圓W，並且對黏著劑層2的第二表面2b黏貼切割環DR的步驟；將晶圓W單片化為多個晶片S的步驟（切割步驟）；自黏著劑層2的第一區域拾取帶接著劑片的晶片8（晶片S1與接著劑片5P的積層體，參照圖4的（d））的步驟；以及經由接著劑片5P將晶片S1安裝到基板70上的步驟。The manufacturing method of the semiconductor device 100 includes: a step of preparing the above-mentioned film 10; a step of adhering a wafer W to the adhesive layer 5 of the film 10 and adhering a cutting ring DR to the second surface 2b of the adhesive layer 2; a step of singulating the wafer W into a plurality of chips S (cutting step); a step of picking up a chip 8 with an adhesive chip from the first area of the adhesive layer 2 (a laminate of the chip S1 and the adhesive chip 5P, refer to (d) of Figure 4); and a step of mounting the chip S1 on the substrate 70 via the adhesive chip 5P.
參照圖4的（a）～圖4的（d）對帶接著劑片的晶片8的製作方法的一例進行說明。首先，準備上述的膜10。如圖4的（a）及圖4的（b）所示，以接著劑層5與晶圓W的一個面接觸的方式貼附膜10。另外，對黏著劑層2的第二表面2b貼附切割環DR。An example of a method for producing a wafer 8 with an adhesive sheet is described with reference to FIG. 4 (a) to FIG. 4 (d). First, the above-mentioned film 10 is prepared. As shown in FIG. 4 (a) and FIG. 4 (b), the film 10 is attached in such a manner that the adhesive layer 5 contacts one surface of the wafer W. In addition, a dicing ring DR is attached to the second surface 2b of the adhesive layer 2.
對晶圓W、接著劑層5及黏著劑層2進行切割。藉此，如圖4的（c）所示，晶圓W被單片化而成為晶片S。接著劑層5亦被單片化而成為接著劑片5P。作為切割方法，可舉出使用切割刀片或雷射的方法。再者，亦可在切割晶圓W之前藉由研削晶圓W來實現薄膜化。The wafer W, the adhesive layer 5, and the adhesive layer 2 are cut. As shown in FIG. 4 (c), the wafer W is singulated into chips S. The adhesive layer 5 is also singulated into adhesive chips 5P. As a cutting method, a method using a dicing blade or a laser can be cited. Furthermore, the wafer W can also be ground to achieve thin film before cutting.
切割後，如圖4的（d）所示，藉由在常溫或冷卻條件下擴張基材層1，使晶片S相互分離，並且藉由用銷42上推，使接著劑片5P自黏著劑層2剝離，並且用抽吸夾頭44抽吸並拾取帶接著劑片的晶片8。After cutting, as shown in (d) of Figure 4, the chips S are separated from each other by expanding the substrate layer 1 at room temperature or under cooling conditions, and the adhesive sheet 5P is peeled off from the adhesive layer 2 by pushing up with the pin 42, and the chip 8 with the adhesive sheet is sucked and picked up with the suction chuck 44.
參照圖5～圖7對半導體裝置100的製造方法進行具體說明。首先，如圖5所示，經由接著劑片5P將第一段的晶片S1（晶片S）壓接在基板70的規定的位置上。接著，藉由加熱使接著劑片5P硬化。藉此，接著劑片5P硬化而成為硬化物5C。自減少空隙的觀點出發，接著劑片5P的硬化處理可在加壓環境下實施。The manufacturing method of the semiconductor device 100 is specifically described with reference to FIGS. 5 to 7. First, as shown in FIG. 5, the first-stage chip S1 (chip S) is pressed and bonded to a predetermined position of the substrate 70 via the bonding agent sheet 5P. Then, the bonding agent sheet 5P is hardened by heating. Thus, the bonding agent sheet 5P is hardened to become a hardened material 5C. From the perspective of reducing the gap, the hardening process of the bonding agent sheet 5P can be implemented in a pressurized environment.
與相對於基板70安裝晶片S1同樣地，在晶片S1的表面上安裝第二段的晶片S2。進而，安裝第三段及第四段的晶片S3、晶片S4，藉此製作圖6所示的結構體60。在用導線W1、導線W2、導線W3、導線W4將晶片S1、晶片S2、晶片S3、晶片S4與基板70電連接後（參照圖7），藉由利用密封層50密封半導體元件及導線，而完成圖3所示的半導體裝置100。 [實施例]In the same manner as the chip S1 is mounted relative to the substrate 70, the second-stage chip S2 is mounted on the surface of the chip S1. Furthermore, the third-stage and fourth-stage chips S3 and S4 are mounted to produce the structure 60 shown in FIG6. After the chips S1, S2, S3, and S4 are electrically connected to the substrate 70 by wires W1, W2, W3, and W4 (see FIG7), the semiconductor elements and wires are sealed by a sealing layer 50, thereby completing the semiconductor device 100 shown in FIG3. [Example]
以下，藉由實施例對本揭示進行說明，但本揭示並不限定於所述實施例。The present disclosure is described below by way of embodiments, but the present disclosure is not limited to the embodiments.
[接著劑清漆的製備] 按照表1所示的符號及組成比（單位：質量%），在作為（b）熱硬化性樹脂的環氧樹脂、作為（c）硬化劑的酚樹脂、以及作為（d）彈性體的丙烯酸橡膠中加入環己酮，進行攪拌而獲得混合物。各成分溶解後，在混合物中加入（a）金屬粒子，用分散器葉片攪拌，使各成分分散至均勻。然後，加入（e）硬化促進劑，使各成分分散至均勻，藉此獲得接著劑清漆A～接著劑清漆C。[Preparation of adhesive varnish] According to the symbols and composition ratios (unit: mass %) shown in Table 1, cyclohexanone was added to (b) an epoxy resin as a thermosetting resin, (c) a phenolic resin as a hardener, and (d) an acrylic rubber as an elastomer, and the mixture was stirred to obtain a mixture. After each component was dissolved, (a) metal particles were added to the mixture, and the mixture was stirred with a disperser blade to disperse the components uniformly. Then, (e) a hardening accelerator was added to disperse the components uniformly, thereby obtaining adhesive varnishes A to C.
表1的符號是指下述成分。 （a）金屬粒子 ·20%Ag-Cu-MA（福田金屬箔粉工業股份有限公司製造、銀塗佈銅粉的產品名、形狀：薄片狀、平均粒徑（雷射50%粒徑（D50 ））：6.0 μm～8.8 μm） （b）熱硬化性樹脂 ·EXA-830CRP（商品名、迪愛生（DIC）股份有限公司製造、雙酚型環氧樹脂、環氧當量：159 g/eq、25℃下為液狀） ·N500P-10（商品名、迪愛生（DIC）股份有限公司製造、雙酚型環氧樹脂、環氧當量：203 g/eq） ·YDCN-700-10（商品名、日鐵化學&材料（NIPPON STEEL Chemical & Material）股份有限公司製造，甲酚酚醛清漆型環氧樹脂、環氧當量：215 g/eq） （c）硬化劑 ·MEH-7800M（商品名、明和化成股份有限公司製造、酚樹脂，黏度（150℃）：0.31 Pa·s～0.43 Pa·s（3.1泊（poise）～4.3 poise），羥基當量：175 g/eq） ·HE-100C-30（商品名、愛沃特（AIR WATER）股份有限公司製造、苯基芳烷基型酚樹脂，黏度（150℃）：0.27 Pa·s～0.41 Pa·s（2.7 poise～4.1 poise），羥基當量：170 g/eq） （d）彈性體 ·HTR-860P-3（商品名、長瀨化成（Nagase ChemteX）股份有限公司製造、含縮水甘油基的丙烯酸橡膠，重量平均分子量：100萬、Tg：-7℃） （e）硬化促進劑 ·固唑（Curezol）2PZ-CN（商品名、四國化成工業股份有限公司製造、1-氰基乙基-2-苯基咪唑）The symbols in Table 1 refer to the following components. (a) Metal particles · 20% Ag-Cu-MA (manufactured by Fukuda Metal Foil Co., Ltd., product name of silver-coated copper powder, shape: flake-shaped, average particle size (laser 50% particle size (D 50 )): 6.0 μm to 8.8 μm) (b) Thermosetting resin · EXA-830CRP (trade name, manufactured by DIC Corporation, bisphenol-type epoxy resin, epoxy equivalent: 159 g/eq, liquid at 25°C) · N500P-10 (trade name, manufactured by DIC Corporation, bisphenol-type epoxy resin, epoxy equivalent: 203 g/eq) · YDCN-700-10 (trade name, manufactured by NIPPON STEEL Chemical & Materials Co., Ltd. (c) Hardener · MEH-7800M (trade name, manufactured by Meiwa Chemicals Co., Ltd., phenolic resin, viscosity (150°C): 0.31 Pa·s to 0.43 Pa·s (3.1 poise to 4.3 poise), hydroxyl equivalent: 175 g/eq) · HE-100C-30 (trade name, manufactured by Air Water Co., Ltd., phenyl aralkyl type phenolic resin, viscosity (150°C): 0.27 Pa·s to 0.41 Pa·s (2.7 poise to 4.1 poise), hydroxyl equivalent: 170 g/eq) (d) Elastomer · HTR-860P-3 (trade name, manufactured by Nagase Chemicals Co., Ltd., (e) Curezol 2PZ-CN (trade name, manufactured by Shikoku Chemical Industries, Ltd., 1-cyanoethyl-2-phenylimidazole)
[表1]
＜實施例1＞ [接著劑層的形成] 接著劑層的形成使用了接著劑清漆A。將真空脫泡後的接著劑清漆A塗佈於作為支撐膜的實施了脫模處理的聚對苯二甲酸乙二酯（PET）膜（厚度38 μm）上。對塗佈的清漆以90℃5分鐘、繼而140℃5分鐘的兩階段進行加熱乾燥，從而在支撐膜上形成處於B階段狀態的接著劑層（厚度20 μm）。<Example 1> [Formation of adhesive layer] The adhesive varnish A was used to form the adhesive layer. The adhesive varnish A after vacuum degassing was applied to a polyethylene terephthalate (PET) film (thickness 38 μm) that had been subjected to mold release treatment as a support film. The applied varnish was heat-dried in two stages at 90°C for 5 minutes and then at 140°C for 5 minutes, thereby forming an adhesive layer (thickness 20 μm) in the B stage state on the support film.
[表面粗糙度的測定] 藉由使用形狀測定雷射顯微鏡VK-X100（基恩士（KEYENCE）股份有限公司製造）以倍率50倍測定接著劑層的第一表面（與黏著劑層相接一側的面）的表面粗糙度（算術平均粗糙度Ra）而求出。將結果示於表2中。[Measurement of surface roughness] The surface roughness (arithmetic mean roughness Ra) of the first surface (the surface in contact with the adhesive layer) of the adhesive layer was measured at a magnification of 50 times using a shape measurement laser microscope VK-X100 (manufactured by KEYENCE Co., Ltd.). The results are shown in Table 2.
[熱傳導率的測定] （測定試樣的製作） 使用Leon13DX（拉米股份有限公司（LamiCorporation）製造），以厚度為100 μm以上的方式在70℃下層壓接著劑層，獲得積層體。對於積層體，施加110℃下30分鐘，175℃下180分鐘的熱歷程，獲得了測定試樣。[Measurement of thermal conductivity] (Preparation of test sample) Using Leon 13DX (manufactured by Lami Corporation), the adhesive layer was laminated at 70°C in a manner of 100 μm or more to obtain a laminate. The laminate was subjected to a thermal history of 110°C for 30 minutes and 175°C for 180 minutes to obtain a test sample.
（熱傳導率的測定） 測定試樣的熱傳導率藉由下式計算。將結果示於表2中。 熱傳導率（W/m·K）=比熱（J/kg·K）×熱擴散率（m2 /s）×比重（kg/m3 ） 再者，比熱、熱擴散率及比重藉由以下方法測定。熱傳導率變高意味著散熱性更優異。(Measurement of Thermal Conductivity) The thermal conductivity of the measured sample was calculated by the following formula. The results are shown in Table 2. Thermal conductivity (W/m·K) = specific heat (J/kg·K) × heat diffusion rate (m 2 /s) × specific gravity (kg/m 3 ) The specific heat, heat diffusion rate and specific gravity were measured by the following method. A higher thermal conductivity means better heat dissipation.
（比熱（25℃）的測定） ·測定裝置：差示掃描熱量測定裝置（日本帕金艾爾瑪（Perkin Elmer Japan）股份有限公司製造、商品名：DSC8500） ·基準物質：藍寶石 ·升溫速度：10℃/分 ·升溫溫度範圍：20℃～100℃(Measurement of specific heat (25°C)) · Measurement device: Differential scanning calorimeter (manufactured by Perkin Elmer Japan Co., Ltd., trade name: DSC8500) · Reference material: Sapphire · Heating rate: 10°C/min · Heating temperature range: 20°C to 100°C
（熱擴散率的測定） ·測定裝置：熱擴散率測定裝置（日本耐馳（NETZSCH Japan）股份有限公司製造、商品名：LFA467 海珀弗萊士（HyperFlash）） ·測定試樣的處理：用碳噴霧對測定試樣的兩面進行黑化處理 ·測定方法：氙閃光法 ·測定環境溫度：25℃(Measurement of thermal diffusion rate) · Measurement device: Thermal diffusion rate measurement device (manufactured by NETZSCH Japan Co., Ltd., trade name: LFA467 HyperFlash) · Treatment of the test sample: Blackening of both sides of the test sample with carbon spray · Measurement method: Xenon flash method · Measurement environment temperature: 25°C
（比重的測定） ·測定裝置：電子比重計（阿爾法米拉治（Alfa Mirage）股份有限公司製造、商品名：SD200L） ·測定方法：阿基米德法（Archimedes method）(Measurement of specific gravity) · Measurement device: Electronic specific gravity meter (manufactured by Alfa Mirage Co., Ltd., trade name: SD200L) · Measurement method: Archimedes method
[黏著劑層的形成] 如下般合成黏著劑層中調配的丙烯酸樹脂。即，在裝配有三一馬達（Three-One Motor）、攪拌葉片、氮氣導入管的容量為2000 ml的燒瓶中加入了以下成分。 ·乙酸乙酯（溶劑）：635 g ·丙烯酸2-乙基己酯：395 g ·丙烯酸2-羥基乙酯：100 g ·甲基丙烯酸：5 g ·偶氮二異丁腈：0.08 g[Formation of adhesive layer] The acrylic resin prepared in the adhesive layer was synthesized as follows. Specifically, the following components were added to a 2000 ml flask equipped with a Three-One Motor, a stirring blade, and a nitrogen inlet tube. · Ethyl acetate (solvent): 635 g · 2-ethylhexyl acrylate: 395 g · 2-hydroxyethyl acrylate: 100 g · Methacrylic acid: 5 g · Azobisisobutyronitrile: 0.08 g
將內容物攪拌至充分均勻，以流量500 ml/分實施60分鐘起泡，對系統中的溶存氧進行脫氣。用1小時升溫至78℃，在升溫後聚合6小時。然後，將反應溶液轉移到裝配有三一馬達、攪拌葉片、氮氣導入管的容量2000 mL的加壓釜中，在120℃、0.28 MPa條件下加溫4.5小時後，冷卻至室溫（25℃，以下相同）。Stir the contents until fully uniform, and perform bubbling at a flow rate of 500 ml/min for 60 minutes to degas the dissolved oxygen in the system. Raise the temperature to 78°C in 1 hour, and polymerize for 6 hours after the temperature rise. Then, transfer the reaction solution to a 2000 mL autoclave equipped with a Sany motor, stirring blades, and a nitrogen inlet tube, and heat at 120°C and 0.28 MPa for 4.5 hours, then cool to room temperature (25°C, the same below).
接著，加入490 g乙酸乙酯進行攪拌稀釋。向其中添加作為聚合抑制劑的甲氧基苯酚0.025 g及作為胺基甲酸酯化觸媒的二月桂酸二辛基錫0.10 g後，加入2-甲基丙烯醯氧基乙基異氰酸酯（昭和電工股份有限公司製造、卡萊茲（Karenz）MOI（商品名））42.5 g，在70℃下反應6小時後，冷卻至室溫。然後，加入乙酸乙酯，使丙烯酸樹脂溶液中的不揮發成分含量調整為35質量%，從而獲得包含具有能夠鏈聚合的官能基的（A）丙烯酸樹脂的溶液。Next, 490 g of ethyl acetate was added and stirred for dilution. 0.025 g of methoxyphenol as a polymerization inhibitor and 0.10 g of dioctyltin dilaurate as a urethanization catalyst were added thereto, and 42.5 g of 2-methacryloyloxyethyl isocyanate (Karenz MOI (trade name), manufactured by Showa Denko Co., Ltd.) was added, and the mixture was reacted at 70°C for 6 hours, and then cooled to room temperature. Ethyl acetate was then added to adjust the non-volatile component content in the acrylic resin solution to 35% by mass, thereby obtaining a solution containing (A) acrylic resin having a functional group capable of chain polymerization.
將以上述方式獲得的包含（A）丙烯酸樹脂的溶液在60℃下真空乾燥一晚。利用全自動元素分析裝置（艾里蒙塔（Elementar）公司製造、商品名：瓦瑞奧（vario）EL）對以上述方式獲得的固體成分進行元素分析，自氮含量算出導入的2-甲基丙烯醯氧基乙基異氰酸酯的含量，結果為0.50 mmol/g。The solution containing the acrylic resin (A) obtained in the above manner was vacuum dried at 60°C overnight. The solid component obtained in the above manner was subjected to elemental analysis using a fully automatic elemental analyzer (manufactured by Elementar, trade name: Variol EL), and the content of the introduced 2-methacryloyloxyethyl isocyanate was calculated from the nitrogen content, and the result was 0.50 mmol/g.
另外，使用以下的裝置求出（A）丙烯酸樹脂的聚苯乙烯換算重量平均分子量。即，使用東曹（Tosoh）股份有限公司製造的SD-8022/DP-8020/RI-8020、管柱使用日立化成股份有限公司製造的蓋爾派克（Gelpack） GL-A150-S/GL-A160-S、溶離液使用四氫呋喃，進行GPC測定。其結果，聚苯乙烯換算重量平均分子量為80萬。按照日本工業標準（Japanese industrial standard，JIS）K0070記載的方法測定的羥值及酸值為61.1 mgKOH/g及6.5 mgKOH/g。In addition, the polystyrene-equivalent weight average molecular weight of (A) acrylic resin was determined using the following apparatus. That is, GPC measurement was performed using SD-8022/DP-8020/RI-8020 manufactured by Tosoh Co., Ltd., Gelpack GL-A150-S/GL-A160-S manufactured by Hitachi Chemical Co., Ltd. as a column, and tetrahydrofuran as an eluent. As a result, the polystyrene-equivalent weight average molecular weight was 800,000. The hydroxyl value and acid value measured by the method described in Japanese industrial standard (JIS) K0070 were 61.1 mgKOH/g and 6.5 mgKOH/g.
藉由混合以下成分，製備黏著劑層形成用的清漆。再者，由該清漆形成的黏著劑層藉由照射紫外線而硬化。乙酸乙酯（溶劑）的量以清漆的總固體成分含量為25質量%的方式調整。 ·（A）丙烯酸樹脂溶液：100 g（固體成分） ·（B）光聚合起始劑（1-羥基環己基苯基酮、汽巴精化（Ciba Specialty Chemicals）股份有限公司製造、豔佳固（IRGACURE）184）、「豔佳固（IRGACURE）」是註冊商標）：0.8 g ·（B）光聚合起始劑（雙(2,4,6-三甲基苯甲醯基)-苯基氧化膦、汽巴精化（Ciba Specialty Chemicals）股份有限公司製造、豔佳固（IRGACURE）819）、「豔佳固（IRGACURE）」是註冊商標）：0.2 g ·（C）交聯劑（多官能異氰酸酯、日本聚胺基甲酸酯工業股份有限公司製造、科羅耐特（Coronate）L、固體成分：75%）：8.0g（固體成分） ·乙酸乙酯（溶劑）A varnish for forming an adhesive layer is prepared by mixing the following components. The adhesive layer formed by the varnish is cured by irradiating ultraviolet rays. The amount of ethyl acetate (solvent) is adjusted so that the total solid content of the varnish is 25% by mass. · (A) Acrylic resin solution: 100 g (solid content) · (B) Photopolymerization initiator (1-hydroxycyclohexyl phenyl ketone, manufactured by Ciba Specialty Chemicals Co., Ltd., IRGACURE 184), "IRGACURE" is a registered trademark): 0.8 g · (B) Photopolymerization initiator (bis(2,4,6-trimethylbenzyl)-phenylphosphine oxide, manufactured by Ciba Specialty Chemicals Co., Ltd., IRGACURE 819), "IRGACURE" is a registered trademark): 0.2 g · (C) Crosslinking agent (multifunctional isocyanate, manufactured by Japan Polyurethane Industry Co., Ltd., Coronate L, solid content: 75%): 8.0 g (solid content) · Ethyl acetate (solvent)
準備其中一面實施了脫模處理的聚對苯二甲酸乙二酯膜（寬450 mm、長500 mm、厚38 μm）。使用塗敷機將黏著劑層形成用的清漆塗佈在實施了脫模處理的面上後，在80℃下乾燥5分鐘。藉此，獲得包括聚對苯二甲酸乙二醇酯膜、在其上形成的黏著劑層（厚度30 μm）的積層體（切割膜）。A polyethylene terephthalate film (450 mm wide, 500 mm long, 38 μm thick) with one side subjected to mold release treatment was prepared. A varnish for forming an adhesive layer was applied to the surface subjected to mold release treatment using a coating machine, and then dried at 80°C for 5 minutes. In this way, a laminate (cut film) including a polyethylene terephthalate film and an adhesive layer (30 μm thick) formed thereon was obtained.
準備其中一面實施了電暈處理的聚烯烴膜（寬450 mm、長500 mm、厚80 μm）。在室溫下將實施了電暈處理的面與所述積層體的黏著劑層貼合。繼而，用橡膠輥按壓，藉此將黏著劑層轉印到聚烯烴膜（覆膜）上。然後，在室溫下放置3天，藉此獲得本實施例的黏著劑層。A polyolefin film (450 mm wide, 500 mm long, 80 μm thick) with one side subjected to corona treatment was prepared. The surface subjected to corona treatment was bonded to the adhesive layer of the laminate at room temperature. Then, the adhesive layer was transferred to the polyolefin film (laminated film) by pressing with a rubber roller. Then, the film was left at room temperature for 3 days to obtain the adhesive layer of this embodiment.
[切割-黏晶一體型膜的製作] 在25℃下貼合接著劑層與黏著劑層，藉此獲得積層膜。對該積層膜照射300 mJ/cm2 的紫外線（照度：100 mW/cm2 ）。之後，經過在40℃的溫度條件下老化4天的步驟，獲得實施例1的切割-黏晶一體型膜。[Preparation of a dicing-die-bonding integrated film] The adhesive layer and the adhesive layer were bonded at 25°C to obtain a laminated film. The laminated film was irradiated with 300 mJ/ cm2 of ultraviolet light (illuminance: 100 mW/ cm2 ). Thereafter, the laminated film was aged at 40°C for 4 days to obtain the dicing-die-bonding integrated film of Example 1.
[T形剝離強度的測定] 按照JIS K6854-3:1999「接著劑-剝離接著強度試驗方法-第三部分：T形剝離」中記載的方法測定接著劑層與黏著劑層的界面的T形剝離強度。以下條件如下。將結果示於表2中。 ·溫度：23℃ ·試驗片寬度：25 mm ·剝離速度：10 mm/分鐘[Measurement of T-peel strength] The T-peel strength of the interface between the adhesive layer and the adhesive layer was measured according to the method described in JIS K6854-3:1999 "Adhesives - Test methods for peel strength of adhesives - Part 3: T-peel". The following conditions are as follows. The results are shown in Table 2. · Temperature: 23°C · Test piece width: 25 mm · Peeling speed: 10 mm/min
[切割性的評價] 在以下條件下將切割-黏晶一體型膜貼附在矽晶圓（直徑：12英吋、厚度：50 μm）及切割環上。貼附矽晶圓及切割環後的切割-黏晶一體型膜的MD方向的伸長率為1.0%～1.3%左右。 （貼附條件） ·貼附裝置：DFM2800（迪士科（Disco）股份有限公司製造） ·貼附溫度：70℃ ·貼附速度：10 mm/s ·貼附張力等級：6級[Evaluation of cutting properties] The dicing-bonding film was attached to a silicon wafer (diameter: 12 inches, thickness: 50 μm) and a dicing ring under the following conditions. The elongation of the dicing-bonding film in the MD direction after attaching the silicon wafer and dicing ring was about 1.0% to 1.3%. (Attachment conditions) ·Attachment device: DFM2800 (manufactured by Disco Co., Ltd.) ·Attachment temperature: 70°C ·Attachment speed: 10 mm/s ·Attachment tension level: 6
接著，用刀片切割（blade dicing）將帶有切割-黏晶一體型膜的矽晶圓單片化為多個帶接著劑片的晶片（尺寸2 mm×2 mm）。切割後確認有無晶片飛散。將結果示於表2中。 （切割條件） ·切片機：DFD6361（迪士科（Disco）股份有限公司製造） ·刀片：ZH05-SD4000-N1-70-BB（迪士科（Disco）股份有限公司製造） ·刀片轉速：40000 rpm ·切割速度：30 mm/秒 ·刀片高度：90 μm ·切割膜距基材表面的切入深度：20 μm ·切割時的水量 刀片式冷卻器：1.5 L/分鐘 噴淋：1.0 L/分鐘 噴霧：1.0 L/分鐘Next, the silicon wafer with the dicing-bonding film was singulated into multiple chips (size 2 mm×2 mm) with bonding agent using blade dicing. After dicing, check whether the chips were scattered. The results are shown in Table 2. (Cutting conditions) · Slicer: DFD6361 (manufactured by Disco Co., Ltd.) · Blade: ZH05-SD4000-N1-70-BB (manufactured by Disco Co., Ltd.) · Blade speed: 40000 rpm · Cutting speed: 30 mm/sec · Blade height: 90 μm · Cutting depth of dicing film from substrate surface: 20 μm · Water volume during cutting Blade cooler: 1.5 L/min Spray: 1.0 L/min Mist: 1.0 L/min
＜比較例1＞ 除不對接著劑層與黏著劑層的積層膜照射紫外線之外，與實施例1同樣地獲得切割-黏晶一體型膜。將評價結果示於表2中。<Comparative Example 1> Except that the laminated film of the bonding agent layer and the adhesive layer was not irradiated with ultraviolet rays, a dicing-bonding integrated film was obtained in the same manner as in Example 1. The evaluation results are shown in Table 2.
＜實施例2＞ 除使用接著劑清漆B形成接著劑層、以及在貼合接著劑層與黏著劑層之前，進行接著劑層的第二表面的平滑化處理之外，與實施例1同樣地獲得切割-黏晶一體型膜。將評價結果示於表2中。再者，平滑化處理的條件如下。 ·溫度：140℃ ·壓力：0.5 MPa ·速度：0.1 m/分<Example 2> Except that the adhesive layer was formed using adhesive varnish B and the second surface of the adhesive layer was smoothed before the adhesive layer and the adhesive layer were bonded together, a dicing-bonding integrated film was obtained in the same manner as in Example 1. The evaluation results are shown in Table 2. The smoothing treatment conditions were as follows. · Temperature: 140°C · Pressure: 0.5 MPa · Speed: 0.1 m/min
＜比較例2＞ 除不對接著劑層與黏著劑層的積層膜照射紫外線之外，與實施例2同樣地獲得切割-黏晶一體型膜。將評價結果示於表2中。<Comparative Example 2> Except that the laminated film of the bonding agent layer and the adhesive layer was not irradiated with ultraviolet rays, a dicing-bonding integrated film was obtained in the same manner as in Example 2. The evaluation results are shown in Table 2.
＜比較例3＞ 除使用接著劑清漆C形成接著劑層之外，與實施例1同樣地獲得切割-黏晶一體型膜。將評價結果示於表2中。<Comparative Example 3> Except that the adhesive varnish C was used to form the adhesive layer, a dicing-bonding integrated film was obtained in the same manner as in Example 1. The evaluation results are shown in Table 2.
＜比較例4＞ 除不對接著劑層與黏著劑層的積層膜照射紫外線之外，與比較例3同樣地獲得切割-黏晶一體型膜。將評價結果示於表2中。<Comparative Example 4> Except that the laminated film of the bonding agent layer and the adhesive layer was not irradiated with ultraviolet rays, a dicing-bonding integrated film was obtained in the same manner as in Comparative Example 3. The evaluation results are shown in Table 2.
[表2]
根據本揭示，提供一種在將晶圓及接著劑層單片化而在黏著劑層上製作多個帶接著劑片的晶片的切割步驟中，能夠充分抑制帶接著劑片的晶片自黏著劑層脫離，而能夠有效率地製造具有優異的散熱性的半導體裝置的方法。另外，根據本揭示，提供一種對於有效率地製造所述半導體裝置而言有用的接著劑層的選定方法、以及包括該接著劑層的切割-黏晶一體型膜及其製造方法。According to the present disclosure, a method is provided in which, in the dicing step of singulating a wafer and an adhesive layer to produce a plurality of wafers with adhesive wafers on the adhesive layer, the wafers with adhesive wafers can be sufficiently suppressed from detaching from the adhesive layer, thereby efficiently producing a semiconductor device with excellent heat dissipation. In addition, according to the present disclosure, a method for selecting an adhesive layer useful for efficiently producing the semiconductor device, a dicing-bonding integrated film including the adhesive layer, and a method for producing the same are provided.
1:基材層 2:黏著劑層 2a:第一表面 2b:第二表面 3:切割膜 5:接著劑層 5a:第一表面 5b:第二表面 5C:接著劑片5P的硬化物 5P:接著劑片 8:帶接著劑片的晶片 10:切割-黏晶一體型膜 42:銷 44:抽吸夾頭 50:密封層 60:結構體 70:基板 100:半導體裝置 DR:切割環 S、S1、S2、S3、S4:晶片 W:晶圓 W1、W2、W3、W4:導線1: Base material layer 2: Adhesive layer 2a: First surface 2b: Second surface 3: Cutting film 5: Adhesive layer 5a: First surface 5b: Second surface 5C: Hardened adhesive sheet 5P 5P: Adhesive sheet 8: Wafer with adhesive sheet 10: Cutting-bonding integrated film 42: Pin 44: Suction chuck 50: Sealing layer 60: Structure 70: Substrate 100: Semiconductor device DR: Cutting ring S, S1, S2, S3, S4: Wafer W: Wafer W1, W2, W3, W4: Wire
圖1的（a）是表示切割-黏晶一體型膜的一實施方式的平面圖，圖1的（b）是沿著圖1的（a）所示的B-B線的示意剖面圖。 圖2是表示在切割-黏晶一體型膜的黏著劑層的周緣部貼附有切割環並且在接著劑層的表面貼附有晶圓的狀態的示意圖。 圖3是示意性表示半導體裝置的一例的剖面圖。 圖4的（a）～圖4的（d）是示意性表示製造帶接著劑片的晶片的過程的剖面圖。 圖5是示意性表示製造圖3所示的半導體裝置的過程的剖面圖。 圖6是示意性表示製造圖3所示的半導體裝置的過程的剖面圖。 圖7是示意性表示製造圖3所示的半導體裝置的過程的剖面圖。FIG. 1 (a) is a plan view showing an embodiment of a dicing-die bonding film, and FIG. 1 (b) is a schematic cross-sectional view along the B-B line shown in FIG. 1 (a). FIG. 2 is a schematic view showing a state in which a dicing ring is attached to the periphery of the adhesive layer of the dicing-die bonding film and a wafer is attached to the surface of the adhesive layer. FIG. 3 is a cross-sectional view schematically showing an example of a semiconductor device. FIG. 4 (a) to FIG. 4 (d) are cross-sectional views schematically showing a process of manufacturing a wafer with an adhesive sheet. FIG. 5 is a cross-sectional view schematically showing a process of manufacturing the semiconductor device shown in FIG. 3. FIG. 6 is a cross-sectional view schematically showing a process of manufacturing the semiconductor device shown in FIG. 3. FIG. 7 is a cross-sectional view schematically showing a process of manufacturing the semiconductor device shown in FIG. 3.
1:基材層 1: Base material layer
2:黏著劑層 2: Adhesive layer
2a:第一表面 2a: First surface
2b:第二表面 2b: Second surface
3:切割膜 3: Cutting film
5:接著劑層 5: Next is the agent layer
5a:第一表面 5a: First surface
5b:第二表面 5b: Second surface
10:切割-黏晶一體型膜 10: Cutting-bonding-body film
W:晶圓 W: Wafer
Claims (11)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| WOPCT/JP2019/035973 | 2019-09-12 | ||
| PCT/JP2019/035973 WO2021048986A1 (en) | 2019-09-12 | 2019-09-12 | Method for manufacturing semiconductor device, method for selecting adhesive layer, and dicing die bonding integrated film and method for manufacturing same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW202112997A TW202112997A (en) | 2021-04-01 |
| TWI842941B true TWI842941B (en) | 2024-05-21 |
Family
ID=
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201631674A (en) | 2014-11-27 | 2016-09-01 | Nitto Denko Corp | Conductive film-like adhesive, dicing tape attached with film-like adhesive, and manufacturing method of semiconductor device |
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201631674A (en) | 2014-11-27 | 2016-09-01 | Nitto Denko Corp | Conductive film-like adhesive, dicing tape attached with film-like adhesive, and manufacturing method of semiconductor device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR100831153B1 (en) | Bonding film composition for semiconductor assembly, bonding film therefrom, and dicing die bond film comprising the same | |
| TWI827632B (en) | Semiconductor device manufacturing method, thermosetting resin composition, and die-cutting-bonding integrated film | |
| TW202035605A (en) | Adhesive film, adhesive film with dicing tape and method for manufacturing semiconductor device | |
| TWI774916B (en) | Manufacturing method of semiconductor device, film-like adhesive, and adhesive sheet | |
| CN111656500B (en) | Method for manufacturing semiconductor device and adhesive film | |
| TW202045676A (en) | Adhesive agent composition, film-like adhesive agent, adhesive sheet, and semiconductor device manufacturing method | |
| TWI465537B (en) | Non-uv type dicing die bonding film | |
| JP7287477B2 (en) | Semiconductor device manufacturing method, adhesive layer selection method, and dicing/die bonding integrated film manufacturing method | |
| TWI785197B (en) | Semiconductor device manufacturing method and film adhesive | |
| JP2004352871A (en) | Adhesive composition, adhesive film, and semiconductor device using the same | |
| TWI842941B (en) | Semiconductor device manufacturing method, adhesive layer selection method, and dicing-bonding integrated film and manufacturing method thereof | |
| JP7255146B2 (en) | FILM ADHESIVE, ADHESIVE SHEET, SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF | |
| TW202209455A (en) | Integrated dicing die-bonding film, die-bonding film, and method for producing semiconductor device | |
| JP2010199626A (en) | Adhesive film for die bonding, and semiconductor device using the same | |
| WO2021079968A1 (en) | Adhesive agent composition, film-like adhesive agent, dicing/die-bonding all-in-one film, and semiconductor and method for producing same | |
| TW202024270A (en) | Film-shaped adhesive, adhesive sheet, semiconductor device, and production method for semiconductor device | |
| WO2021006158A1 (en) | Integrated dicing/die bonding film, die bonding film, and method for producing semiconductor device | |
| JP2015156441A (en) | Temporarily fixing film, and method of manufacturing semiconductor device | |
| JP7409030B2 (en) | Dicing/die bonding integrated film and its manufacturing method, and semiconductor device manufacturing method | |
| TWI785196B (en) | Thermosetting resin composition, film adhesive, adhesive sheet and method for manufacturing semiconductor device | |
| TW202209454A (en) | Integrated dicing die-bonding film, die-bonding film, and method for producing semiconductor device | |
| JP7140143B2 (en) | Semiconductor device manufacturing method and film adhesive | |
| JP2017098316A (en) | Dicing tape integrated adhesive sheet | |
| JP2024072584A (en) | Method for manufacturing semiconductor device | |
| TW202121512A (en) | Method for evaluating pickup performance, integrated dicing/die-bonding film, method for evaluating and selecting integrated dicing/die-bonding film, and method for manufacturing semiconductor device |