TWI839393B - Plasma processing systems for modulated plasma and methods of operating the same - Google Patents
Plasma processing systems for modulated plasma and methods of operating the same Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
- H01J37/32155—Frequency modulation
- H01J37/32165—Plural frequencies
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
- H01J37/32183—Matching circuits
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
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- H—ELECTRICITY
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- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
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Abstract
Description
本記載實施例概括關於電漿處理系統，且尤指具有調變電漿的電漿處理系統。 The presently described embodiments generally relate to plasma processing systems, and more particularly to plasma processing systems having modulated plasma.
用於蝕刻與沉積的電漿處理系統已經使用數十年，但是在處理技術與設備技術的進展持續創造愈來愈為更複雜的系統。這些愈來愈為複雜的系統導致在驅動相同電漿系統的多個產生器之間的較有問題的相互作用。 Plasma processing systems for etching and deposition have been used for decades, but advances in processing and equipment technology continue to create increasingly more complex systems. These increasingly complex systems lead to more problematic interactions between multiple generators driving the same plasma system.
一個觀點可描述其特徵為一種電漿處理系統，其包括二者均將功率遞送到電漿室之高頻產生器與低頻產生器。所述系統的濾波器被耦接在電漿室與高頻產生器之間，且所述濾波器抑制在高頻產生器的頻率附近之頻寬外的功率。在高頻產生器的頻率之功率抑制為至多2dB，且在從高頻產生器的頻率開始超過低頻產生器的頻率之頻率的功率抑制是高於在高頻產生器的頻率之功率抑制為至少2dB。 One aspect may be characterized as a plasma processing system including a high frequency generator and a low frequency generator both delivering power to a plasma chamber. A filter of the system is coupled between the plasma chamber and the high frequency generator, and the filter suppresses power outside a bandwidth around a frequency of the high frequency generator. The power suppression at the frequency of the high frequency generator is at most 2 dB, and the power suppression at frequencies starting from the frequency of the high frequency generator and exceeding the frequency of the low frequency generator is at least 2 dB higher than the power suppression at the frequency of the high frequency generator.
另一個觀點可描述其特徵為一種電漿處理系統，其包括經配置以將功率遞送到電漿室之高頻產生器以及經配置以將功率遞送到電漿室之低頻產生器。濾波器被耦接在電漿室與高頻產生器之間，且所述濾波器包括並聯連 接的二或多個螺旋式共振器。 Another aspect may be described as being characterized as a plasma processing system including a high frequency generator configured to deliver power to a plasma chamber and a low frequency generator configured to deliver power to the plasma chamber. A filter is coupled between the plasma chamber and the high frequency generator, and the filter includes two or more spiral resonators connected in parallel.
又一個觀點可描述其特徵為一種用於濾波在電漿處理系統中的功率的方法。所述方法包括：用高頻產生器來將功率供應到電漿室以點燃且維持電漿；及，用低頻產生器來將功率供應到電漿室，低頻產生器被連接到電漿。混合結果的功率是用濾波器來抑制以限制其呈現給高頻產生器之時間變化負載反射係數的變化。 Yet another aspect may be characterized as a method for filtering power in a plasma processing system. The method includes: supplying power to a plasma chamber with a high frequency generator to ignite and maintain the plasma; and, supplying power to the plasma chamber with a low frequency generator, the low frequency generator being connected to the plasma. The resulting power is suppressed with a filter to limit the variation of the time-varying load reflection coefficient presented to the high frequency generator.
100:電漿室 100: Plasma chamber
102:高頻產生器 102: High frequency generator
104:濾波器 104:Filter
106、110:匹配網路 106, 110: Matching network
108:低頻產生器 108:Low frequency generator
112:延遲構件 112: Delayed components
114、118:寬頻測量構件/感測器 114, 118: Broadband measurement components/sensors
116、120:寬頻測量構件/寬頻測量系統 116, 120: Broadband measurement components/broadband measurement systems
122、124:連接 122, 124: Connection
700:流程圖 700: Flowchart
710、720、730、740、750:方塊 710, 720, 730, 740, 750: Blocks
804B:濾波器 804B: Filter
810:輸入電容器 810: Input capacitor
820:輸出電容器 820: Output capacitor
904:濾波器 904:Filter
910、920:水連接 910, 920: Water connection
930:輸入連接器 930: Input connector
1020:中空螺旋線圈 1020:Hollow spiral coil
1022:接地端 1022: Ground terminal
1024:銅塊 1024: Copper block
1026:銅帶 1026: Copper Strip
1028:陶瓷絕緣件 1028: Ceramic insulation parts
1030:金屬化 1030:Metalization
1032:封裝圓柱狀外殼 1032: Encapsulated cylindrical housing
11100:輸入連接器 11100:Input connector
1120、1150:陶瓷絕緣件 1120, 1150: Ceramic insulation parts
1130、1160:中空螺旋線圈 1130, 1160: Hollow spiral coil
1140:輸出連接器 1140: Output connector
1210:水通道 1210: Water channel
1220、1260:陶瓷絕緣件 1220, 1260: Ceramic insulation parts
1230、1270:帶 1230, 1270: belt
1240:銅塊 1240: Copper block
1250、1280:金屬化 1250, 1280: Metallization
1310:絕緣托架 1310: Insulation bracket
1404:濾波器 1404:Filter
1410、1430:杯狀部 1410, 1430: cup-shaped part
1420、1440:調諧芯塊 1420, 1440: tuning chip
1500:流程圖 1500: Flowchart
1510、1520、1530、1540、1550:方塊 1510, 1520, 1530, 1540, 1550: Blocks
1600:計算系統 1600: Computing system
1612:顯示部分 1612: Display part
1620:非依電性記憶體 1620: Non-volatile memory
1622:匯流排 1622:Bus
1624:隨機存取記憶體(RAM) 1624: Random Access Memory (RAM)
1626:處理部分 1626: Processing section
1627:場可程式閘陣列(FPGA) 1627: Field Programmable Gate Array (FPGA)
1628:收發器構件 1628: Transceiver components
圖1是一種電漿處理系統的方塊圖；圖2是描繪功率可如何藉由使用不同測量系統濾波器頻寬來測量功率而感知的曲線圖；圖3A與3B是描繪負載反射係數之調變的曲線圖，且圖3C是描繪當在圖1所描繪的濾波器為未利用時而可由高頻產生器所見到之致使反射功率的曲線圖；圖4A包括描繪針對於在圖1所描繪的濾波器的範例設計之性能層面的二個曲線圖，且圖4B是描繪當在圖1所描繪的濾波器為未利用時而可由在基本與混合結果頻率的高頻產生器所遞送到電漿負載之淨功率的曲線圖；圖5A與5B是描繪負載反射係數之調變的曲線圖，且圖5C是描繪當在圖1所描繪的濾波器為利用時而可由高頻產生器所見到之致使反射功率的曲線圖；圖6A與6B是描繪負載反射係數之調變的曲線圖，且圖6C是描繪其可由在圖1所描繪的濾波器所見到之致使反射功率的曲線圖；圖7是描繪其可關連於本文記載的實施例所詳細論述之方法的流程圖； 圖8A與8B是描繪關於圖1所述的濾波器的實施例之等效電路的示意圖；圖9是具有二個並聯的螺旋式共振器之範例水冷式濾波器設計的立體圖；圖10是具有二個並聯的螺旋式共振器之水冷式濾波器設計的內部圖；圖11是具有二個並聯的螺旋式共振器之水冷式濾波器設計的剖視圖；圖12是具有二個並聯的螺旋式共振器之水冷式濾波器設計的電容器組的詳細圖；圖13是具有二個並聯的螺旋式共振器之水冷式濾波器設計的分解圖；圖14是包括提供調諧濾波器之濾波器的視圖；圖15是描繪其可關連於本文記載的實施例所詳細論述之方法的流程圖；且圖16是描繪其可關連於本文記載的實施例所利用之計算裝置的方塊圖。 FIG. 1 is a block diagram of a plasma processing system; FIG. 2 is a graph depicting how power may be perceived by measuring power using different measurement system filter bandwidths; FIGS. 3A and 3B are graphs depicting modulation of a load reflection coefficient, and FIG. 3C is a graph depicting the resulting reflected power seen by a high frequency generator when the filter depicted in FIG. 1 is not utilized; FIG. 4A includes two graphs depicting performance aspects of an example design for the filter depicted in FIG. 1 , and FIG. 4B 1 is a graph depicting the net power delivered to the plasma load by the high frequency generator at the fundamental and mixed result frequencies when the filter depicted in FIG. 1 is not utilized; FIGS. 5A and 5B are graphs depicting the modulation of the load reflection coefficient, and FIG. 5C is a graph depicting the resulting reflected power seen by the high frequency generator when the filter depicted in FIG. 1 is utilized; FIGS. 6A and 6B are graphs depicting the modulation of the load reflection coefficient, and FIG. 6C is a graph depicting the resulting reflected power seen by the high frequency generator when the filter depicted in FIG. 1 is utilized. FIG. 7 is a flow chart depicting a method that may be discussed in detail in connection with the embodiments described herein; FIGS. 8A and 8B are schematic diagrams depicting equivalent circuits of embodiments of the filter described in FIG. 1; FIG. 9 is a perspective view of an exemplary water-cooled filter design having two parallel spiral resonators; FIG. 10 is an internal view of a water-cooled filter design having two parallel spiral resonators; FIG. 11 is a schematic diagram of a water-cooled filter design having two parallel spiral resonators; FIG. 12 is a detailed view of a capacitor bank of a water-cooled filter design having two parallel spiral resonators; FIG. 13 is an exploded view of a water-cooled filter design having two parallel spiral resonators; FIG. 14 is a view of a filter including a filter providing a tuning filter; FIG. 15 is a flow chart depicting a method that may be discussed in detail in connection with embodiments described herein; and FIG. 16 is a block diagram depicting a computing device that may be utilized in connection with embodiments described herein.
在驅動相同電漿的產生器之間的相互作用是隨著功率位準提高而變得愈來愈有問題，其中產生器的一者調變由另一個產生器所看見的負載；因此，存有針對用於處理這問題之新穎且改良式的方法與系統之需要。 Interaction between generators driving the same plasma becomes increasingly problematic as power levels increase, with one of the generators modulating the load seen by another generator; therefore, a need exists for new and improved methods and systems for dealing with this problem.
字詞“範例”使用在本文以意指“作為實例、例子或例示”。在本文描述為“範例”的任何實施例無須構成為較佳或優於其他實施例。 The word "exemplary" is used herein to mean "serving as an example, instance, or illustration." Any embodiment described herein as "exemplary" is not necessarily preferred or advantageous over other embodiments.
參考圖1，圖示為方塊圖，其描繪實施例可經實施在其中的範例環境。如圖所示，電漿室100的電漿負載經由濾波器104與匹配網路106而耦接到高頻產生器102。此外，低頻產生器108經由匹配網路110而亦耦接到電漿負載。在諸多應用中，匹配網路106可和匹配網路110為結合。亦顯示的是選用式寬頻測量構件114、116、118、與120以及選用式延遲構件112。選用式延遲構件112可使用某長度的同軸纜線或固定或可變RLCM電路(即：含有電阻器、電感器、電容器、與耦合式電感器的電路)或含有分佈式電路元件的電路(即：傳輸線路電路)來實現。亦顯示的是選用式連接122與124，其若選用式延遲元件112為適當特徵化而允許選用式寬頻測量系統116、120的一者來接替另一者的功能性。 Referring to FIG. 1 , a block diagram is shown that depicts an example environment in which embodiments may be implemented. As shown, a plasma load of a plasma chamber 100 is coupled to a high frequency generator 102 via a filter 104 and a matching network 106. Additionally, a low frequency generator 108 is also coupled to the plasma load via a matching network 110. In many applications, the matching network 106 may be combined with the matching network 110. Also shown are optional wideband measurement components 114, 116, 118, and 120 and an optional delay component 112. The optional delay element 112 may be implemented using a length of coaxial cable or a fixed or variable RLCM circuit (i.e., a circuit containing resistors, inductors, capacitors, and coupled inductors) or a circuit containing distributed circuit elements (i.e., a transmission line circuit). Also shown are optional connections 122 and 124 which allow one of the optional broadband measurement systems 116, 120 to take over the functionality of the other if the optional delay element 112 is properly characterized.
雖然高頻產生器102與低頻產生器108可各自操作於某個範圍的頻率，概括而言，高頻產生器102操作在高於低頻產生器108的頻率。在諸多實施例中，高頻產生器102可為以10MHz到200MHz頻率範圍而將RF功率遞送到電漿室100中的電漿負載之產生器，且低頻產生器108可為例如在100kHz到2MHz範圍。故，低頻產生器108的頻率對高頻產生器102的頻率之範例頻率比是在0.0005與0.2之間。在諸多實施例中，舉例來說，低頻產生器108的頻率對高頻產生器102的頻率之頻率比是小於0.05，且在一些實施例中，低頻產生器108對高頻產生器102之頻率比是小於0.01。舉例來說，比值可為1：150或約0.0067。 Although the high frequency generator 102 and the low frequency generator 108 may each operate at a range of frequencies, in general, the high frequency generator 102 operates at a higher frequency than the low frequency generator 108. In many embodiments, the high frequency generator 102 may be a generator that delivers RF power to a plasma load in the plasma chamber 100 at a frequency range of 10 MHz to 200 MHz, and the low frequency generator 108 may be, for example, in the range of 100 kHz to 2 MHz. Thus, an example frequency ratio of the frequency of the low frequency generator 108 to the frequency of the high frequency generator 102 is between 0.0005 and 0.2. In many embodiments, for example, the frequency ratio of the low frequency generator 108 to the frequency of the high frequency generator 102 is less than 0.05, and in some embodiments, the frequency ratio of the low frequency generator 108 to the high frequency generator 102 is less than 0.01. For example, the ratio may be 1:150 or approximately 0.0067.
就應用而論，高頻產生器102可使用以點燃且維持電漿室100中的電漿負載，且低頻產生器108可經利用以將週期性電壓函數施加到電漿室100的基板支架，來實現離子能量在電漿室100的基板表面的期望分佈。 In applications, the high frequency generator 102 may be used to ignite and maintain a plasma load in the plasma chamber 100, and the low frequency generator 108 may be utilized to apply a periodic voltage function to a substrate support of the plasma chamber 100 to achieve a desired distribution of ion energy on a substrate surface of the plasma chamber 100.
關於功率位準，低頻產生器108可將相當大量的功率(例如：在10kW到30kW範圍)施加到電漿室100的電漿負載。以低頻而施加到電漿的大量功率調變所呈現給高頻產生器102的電漿阻抗。 With respect to power levels, the low frequency generator 108 may apply a relatively large amount of power (e.g., in the range of 10 kW to 30 kW) to the plasma load of the plasma chamber 100. The large amount of power applied to the plasma at a low frequency modulates the plasma impedance presented to the high frequency generator 102.
本申請人已發現的是，在具有調變電漿負載的產生器(例如：低頻產生器108)之先前系統，功率並未以系統所產生的充分數目個混合結果來測量。且未能作成此舉是導致在功率測量之大約100%或更多的誤差之問題。過去(當存在干擾電漿的低頻功率)所採取的典型方式是僅濾除由於將高頻功率施加到以低頻所調變之負載所造成的混合頻率成分(例如：當低與高產生器頻率分別為400kHz與60MHz而濾除59.6MHz與60.4MHz成分)。但當低通濾波器被使用，視在複數阻抗軌跡陷落到一點，且就誤導而言看起來彷彿高頻產生器102正在遞送功率到50歐姆。 The present applicant has discovered that in previous systems having a generator (e.g., low frequency generator 108) that modulates a plasma load, power is not measured with a sufficient number of mixed results produced by the system. And the failure to do so is a problem that results in errors of about 100% or more in the power measurement. The typical approach taken in the past (when there is low frequency power interfering with the plasma) is to filter out only the mixed frequency components caused by applying high frequency power to a load modulated at a low frequency (e.g., filtering out 59.6 MHz and 60.4 MHz components when the low and high generator frequencies are 400 kHz and 60 MHz, respectively). But when the low pass filter is used, the apparent complex impedance trace collapses to a point and falsely it appears as if the high frequency generator 102 is delivering power into 50 ohms.
參考圖2，圖示為曲線圖，其描繪功率如何藉由使用不同的測量系統濾波器頻寬來測量功率而加以感知。測量系統濾波是在測量訊號的降頻或解調變之後而施加；因此，測量系統過濾置中在產生器輸出頻率的頻率成分。舉例來說，施加到產生60MHz輸出的產生器之100kHz的測量系統頻寬將抑制低於59.9MHz與高於60.1MHz的頻率成分。如圖所示，當測量系統的濾波器頻寬被選擇為小於電漿的調變頻率，則看起來彷彿具有比實際存在者為較小許多的反射功率(故，看起來彷彿僅有順向功率為進行到電漿負載)，但實際上並非如此發生。 Referring to Figure 2, illustrated is a graph depicting how power is perceived by measuring power using different measurement system filter bandwidths. The measurement system filter is applied after downconversion or demodulation of the measurement signal; therefore, the measurement system filter mediates frequency components at the generator output frequency. For example, a measurement system bandwidth of 100kHz applied to a generator producing a 60MHz output will suppress frequency components below 59.9MHz and above 60.1MHz. As shown in the figure, when the filter bandwidth of the measurement system is chosen to be less than the modulation frequency of the plasma, it appears that there is much less reflected power than actually exists (so it appears that only forward power is carried to the plasma load), but this is not actually the case.
反之，當功率是以充分頻寬而測量(例如：藉由寬頻測量系統116、120的一者或二者)，顯然的是僅有一部分功率(例如：僅有一半的功率)傳送到電漿負載。故，本記載內容的觀點包括調整測量系統，使得其濾波器頻寬超過調變頻率以捕捉在較高頻率的混合結果。除了可由寬頻測量系統116、120所利用之濾波器頻寬的取樣及處理技術，標題為“用於監測功率之系統、方法、與裝置”之美國專利第7,970,562號亦揭示可用以實現感測器114、118的感測器型式(例如：方向耦接器或電壓/電流(VI)感測器)，以達成能夠捕捉關於較高頻率的混合結果的資訊。應指出的是，測量系統116、120的濾波器頻寬不應 和濾波器104混淆。 Conversely, when power is measured at a sufficient bandwidth (e.g., by one or both of the broadband measurement systems 116, 120), it is apparent that only a portion of the power (e.g., only half of the power) is delivered to the plasma load. Therefore, aspects of the present disclosure include adjusting the measurement system so that its filter bandwidth exceeds the modulation frequency to capture mixing results at higher frequencies. In addition to the sampling and processing techniques for the filter bandwidth that can be utilized by the broadband measurement systems 116, 120, U.S. Patent No. 7,970,562, entitled "System, Method, and Apparatus for Monitoring Power," also discloses sensor types (e.g., directional couplers or voltage/current (VI) sensors) that can be used to implement sensors 114, 118 to achieve information about the mixed results of higher frequencies. It should be noted that the filter bandwidth of the measurement systems 116, 120 should not be confused with the filter 104.
另一個問題是在於，高頻產生器102必須將功率遞送給時間變化負載(調變電漿負載)，其中，時間平均負載反射係數大小為高。參考例如圖3A與3B，圖示為曲線圖，其描繪在低頻產生器108的一個週期的時間期間而由高頻產生器102所見到的負載反射係數大小，且圖3C為曲線圖，其描繪當在圖1所繪的濾波器104為未利用時而可由高頻產生器102所見到的致使反射功率。如圖所示，由高頻產生器102所見到的峰值負載反射係數大小可為接近1(且可能甚至超過1，意指淨功率是從電漿負載流通到高頻產生器102)而由高頻產生器102所見到的平均負載反射係數大小可為0.76。相對高的負載反射係數大小意指的是，概括而言，高頻產生器102可能難以施加期望位準的功率且更為容易遭受到失敗。因此，高頻產生器102可能需要比正常所需要者為更多的功率裝置(雙極性電晶體、MOSFET、等等)以將所需量的功率遞送到電漿室100。 Another problem is that the high frequency generator 102 must deliver power to a time varying load (modulated plasma load) where the time averaged load reflection coefficient magnitude is high. Referring to, for example, FIGS. 3A and 3B , there are shown graphs depicting the load reflection coefficient magnitude seen by the high frequency generator 102 during the time of one cycle of the low frequency generator 108, and FIG. 3C is a graph depicting the resulting reflected power seen by the high frequency generator 102 when the filter 104 depicted in FIG. 1 is not utilized. As shown, the peak load reflection coefficient magnitude seen by the high frequency generator 102 may be close to 1 (and may even exceed 1, meaning that net power is flowing from the plasma load to the high frequency generator 102) while the average load reflection coefficient magnitude seen by the high frequency generator 102 may be 0.76. The relatively high load reflection coefficient magnitude means that, in general, the high frequency generator 102 may have difficulty applying the desired level of power and may be more susceptible to failure. Therefore, the high frequency generator 102 may require more power devices (bipolar transistors, MOSFETs, etc.) than normally required to deliver the required amount of power to the plasma chamber 100.
本文記載內容的觀點是針對於移除或減緩對於電漿調變效應的解決方式。在圖1所描繪的觀點是描繪的濾波器104。如上所論述，不存在描繪的濾波器104，調變電漿負載將時間變化的非線性負載呈現給高頻產生器102，此呈現有挑戰性的問題。 The subject matter described herein is directed to solutions for removing or mitigating the effects of plasma modulation. The subject matter depicted in FIG. 1 is the depicted filter 104. As discussed above, without the depicted filter 104, the modulated plasma load presents a time varying nonlinear load to the high frequency generator 102, which presents a challenging problem.
在諸多實施例中，在圖1所描繪的濾波器104可實施為極窄頻寬、高功率的濾波器，其配置在高頻產生器102與電漿室100之間。濾波器104可具有在高頻產生器102的頻率之合理低的損失，且充分抑制混合結果以限制在對於濾波器104的輸入之所呈現給高頻產生器102的負載反射係數的變化，同時在施加高功率之下為穩定的。當實施時，濾波器104可具有窄的頻寬以過濾邊帶頻率。如在本文所使用，頻寬被定義為存在於截止頻率下限與截止頻率上限之間的頻率範圍，其中截止頻率各者是低於最大中心或共振峰值為3dB，同時衰減或弱化在此二點之外的其他頻率為超過3dB。 In many embodiments, the filter 104 depicted in FIG1 may be implemented as an extremely narrow bandwidth, high power filter disposed between the high frequency generator 102 and the plasma chamber 100. The filter 104 may have a reasonably low loss at the frequency of the high frequency generator 102, and sufficiently suppress mixing results to limit the variation in the reflection coefficient of the load presented to the high frequency generator 102 for the input of the filter 104, while being stable under high applied power. When implemented, the filter 104 may have a narrow bandwidth to filter the sideband frequencies. As used herein, bandwidth is defined as the frequency range existing between a lower cutoff frequency and an upper cutoff frequency, where the cutoff frequencies are each 3 dB below the maximum center or resonant peak, while attenuating or weakening other frequencies outside these two points by more than 3 dB.
在一些實施例中，舉例來說，低頻產生器108是由400kHz產生器所實現，且高頻產生器102是由60MHz RF產生器所實現；因此，呈現1對150的頻率比值。結果，在這些實施例中，濾波器104可抑制在小於離中心頻率為某個百分比的頻率之功率。 In some embodiments, for example, the low frequency generator 108 is implemented by a 400 kHz generator and the high frequency generator 102 is implemented by a 60 MHz RF generator; thus, a frequency ratio of 1 to 150 is presented. As a result, in these embodiments, the filter 104 can suppress power at frequencies less than a certain percentage away from the center frequency.
且在諸多實施例中，在高頻產生器102的頻率之功率抑制是至多2dB，且在從高頻產生器102的頻率開始超過低頻產生器108的頻率之頻率的功率抑制是高於在高頻產生器102的頻率之功率抑制為至少2dB。在一些實施中，濾波器104的頻寬是高頻產生器102的頻率之2%(或更小)。若高頻產生器102例如是由60MHz RF產生器所實現，則濾波器的頻寬可為1.2MHz或更小。 And in many embodiments, the power suppression at the frequency of the high frequency generator 102 is at most 2 dB, and the power suppression at the frequency starting from the frequency of the high frequency generator 102 and exceeding the frequency of the low frequency generator 108 is at least 2 dB higher than the power suppression at the frequency of the high frequency generator 102. In some embodiments, the bandwidth of the filter 104 is 2% (or less) of the frequency of the high frequency generator 102. If the high frequency generator 102 is implemented by a 60 MHz RF generator, for example, the bandwidth of the filter can be 1.2 MHz or less.
參考圖4A，圖示為描繪針對於濾波器104的範例設計之性能層面的曲線圖。在圖4A，濾波器104的頻寬具有約60MHz的中心頻率，且在離中心頻率之百萬赫茲的幾分之一，功率被抑制8dB。圖4B顯示當在圖1所描繪的濾波器為未利用而可由高頻產生器所遞送到電漿負載的淨功率。圖4B顯示的是，具有諸如在圖4A所示的響應之濾波器將允許以60MHz的基本頻率所遞送給電漿負載之功率為以相當高效率而從高頻產生器102通過到電漿負載且抑制從電漿負載所反射回到高頻產生器102的功率。 Referring to FIG4A , a graph is shown depicting performance aspects for an example design of filter 104. In FIG4A , the bandwidth of filter 104 has a center frequency of approximately 60 MHz, and the power is suppressed by 8 dB at a fraction of a million Hertz from the center frequency. FIG4B shows the net power that can be delivered to the plasma load by the high frequency generator when the filter depicted in FIG1 is unutilized. FIG. 4B shows that a filter having a response as shown in FIG. 4A will allow power delivered to the plasma load at a fundamental frequency of 60 MHz to pass from the high frequency generator 102 to the plasma load with considerable efficiency and suppress power reflected from the plasma load back to the high frequency generator 102.
但在此領域的一般技術人士尚未被引導實施具有特徵為類似於在圖4A的濾波器特徵之濾波器104。理由在於欠缺認知電漿調變的根本問題。此外，設計具有在圖4A所繪的特徵之濾波器是有挑戰性(甚至在低功率位準)。但在諸多實施例中，濾波器104掌控高量的功率(例如：數kW的功率)，且高功率與窄頻寬的組合並非熟習此領域技術人士所可能嘗試的組合。 However, those skilled in the art have not been guided to implement a filter 104 having features similar to those of the filter in FIG. 4A. The reason is a lack of understanding of the fundamental problem of plasma modulation. Furthermore, designing a filter having features as depicted in FIG. 4A is challenging (even at low power levels). However, in many embodiments, the filter 104 handles high amounts of power (e.g., several kW of power), and the combination of high power and narrow bandwidth is not a combination that those skilled in the art would attempt.
如上所論述，圖3A與3B描繪當濾波器104為未利用時而由高頻產生器所見到的負載反射係數。且圖5A與5B描繪當範例的濾波器104為實施時而由高頻產生器102所見到的負載反射係數。如在圖5A所示，當濾波器104為部 署時，反射係數被壓縮以在電漿調變整個過程期間而保持更接近於曲線圖的中心(相較於在圖3A的負載反射係數)。 As discussed above, FIGS. 3A and 3B depict the loaded reflection coefficient seen by the high frequency generator when the filter 104 is not utilized. And FIGS. 5A and 5B depict the loaded reflection coefficient seen by the high frequency generator 102 when the example filter 104 is implemented. As shown in FIG. 5A , when the filter 104 is deployed, the reflection coefficient is compressed to remain closer to the center of the graph (compared to the loaded reflection coefficient in FIG. 3A ) throughout the plasma modulation process.
參考圖3B，圖示為在濾波器104為未利用時而於時域中之反射係數大小的描繪。在圖3C所描繪的順向功率(接近100瓦)之對應位準比在電漿處理期間所利用的功率較低許多，但在圖3B所描繪的反射係數及在圖3C的順向與反射功率的相對大小是指導性質。如圖所示，順向功率是99.8瓦且反射功率是63.4瓦。反之，如在圖5C所示，當存在有濾波器104時，具有99.9瓦的順向功率與3.4瓦的反射功率；因此，高頻產生器102處在壓力低許多的定位。且在濾波器104的負載側，如在圖6C所示，濾波器104可提高平均順向功率。 Referring to FIG. 3B , a depiction of the magnitude of the reflection coefficient in the time domain when the filter 104 is not utilized is shown. The corresponding level of the forward power (approximately 100 watts) depicted in FIG. 3C is much lower than the power utilized during the plasma process, but the reflection coefficient depicted in FIG. 3B and the relative magnitude of the forward and reflected power in FIG. 3C are indicative properties. As shown, the forward power is 99.8 watts and the reflected power is 63.4 watts. Conversely, as shown in FIG. 5C , when the filter 104 is present, there is a forward power of 99.9 watts and a reflected power of 3.4 watts; therefore, the high frequency generator 102 is in a much lower stress position. And on the load side of the filter 104, as shown in FIG6C, the filter 104 can increase the average forward power.
參考圖7，圖示為流程圖700，其描繪用於在調變電漿系統中的電漿處理之方法。如圖所示，功率是用高頻產生器102而供應到電漿室100以點燃且維持電漿(方塊710)。此外，功率是用低頻產生器108而供應到電漿室100(方塊720)。在高頻產生器102與電漿室100之間的功率轉移是用配置在電漿室100與高頻產生器之間的濾波器104而抑制在對應於高與低頻的混合結果之頻率(方塊730)。匹配網路106的調諧可作調整(例如：最佳化)以平衡用以提供適當匹配的阻抗到高頻產生器102之需求與功率轉移到電漿室100之效率(方塊740)。 Referring to FIG. 7 , a flow chart 700 is shown that depicts a method for plasma processing in a modulated plasma system. As shown, power is supplied to the plasma chamber 100 using the high frequency generator 102 to ignite and maintain the plasma (block 710). Additionally, power is supplied to the plasma chamber 100 using the low frequency generator 108 (block 720). The power transfer between the high frequency generator 102 and the plasma chamber 100 is suppressed at frequencies corresponding to the mixed results of the high and low frequencies using the filter 104 disposed between the plasma chamber 100 and the high frequency generator (block 730). The tuning of the matching network 106 may be adjusted (e.g., optimized) to balance the need to provide a properly matched impedance to the high frequency generator 102 and the efficiency of power transfer to the plasma chamber 100 (block 740).
簡短回到參考圖6A，注意到負載反射係數的軌跡並未如同在圖3A的情形為對稱於原點。這是在濾波器104的負載側所需之阻抗的特徵，藉以使濾波器104的輸入匹配到其為接近零的負載反射係數，且得到從高頻產生器102到電漿負載之有效率的功率轉移。在濾波器104的負載側之平均負載反射係數是以在圖6A的“+”所指示。如在圖6A所指示，在濾波器104的負載側之負載反射係數平均值是大約-0.23-j0.00。如在圖5A所指示，在濾波器104的高頻產生器102側之負載反射係數平均值是大約0.04-j0.02。這說明使用此濾波器104的觀點，即：在濾波器104的負載側之負載反射係數並未調諧到匹配負載(在 大多數系統為50歐姆)，但典型為設定以達成如由寬頻測量系統所測量之低、時間平均的負載反射係數大小。結果，在諸多實施方式中，寬頻測量構件116或120被利用以捕捉至少第一階的混合結果。寬頻測量構件116或120可經實施為匹配網路106、高頻產生器102的整體構件，或可經實施為單獨構件。因此，在方塊740之調整匹配的步驟是不同於匹配網路106之正常所需者。 Referring briefly back to FIG. 6A , it is noted that the locus of the load reflection coefficient is not symmetrical about the origin as is the case in FIG. 3A . This is characteristic of the impedance required on the load side of the filter 104 so that the input of the filter 104 is matched to its load reflection coefficient which is close to zero and efficient power transfer from the high frequency generator 102 to the plasma load is obtained. The average load reflection coefficient on the load side of the filter 104 is indicated by the “+” in FIG. 6A . As indicated in FIG. 6A , the average value of the load reflection coefficient on the load side of the filter 104 is approximately -0.23-j0.00. As indicated in FIG. 5A , the average value of the load reflection coefficient on the high frequency generator 102 side of the filter 104 is approximately 0.04-j0.02. This illustrates the point of using this filter 104, namely that the load reflection coefficient on the load side of the filter 104 is not tuned to match the load (50 ohms in most systems), but is typically set to achieve a low, time-averaged load reflection coefficient magnitude as measured by a broadband measurement system. As a result, in many embodiments, a broadband measurement component 116 or 120 is utilized to capture at least first order mixing results. The broadband measurement component 116 or 120 may be implemented as an integral component of the matching network 106, the high frequency generator 102, or may be implemented as a separate component. Therefore, the step of adjusting the match at block 740 is different from that normally required for the matching network 106.
在諸多實施方式中，由電漿室100所呈現給濾波器104的阻抗被調整以最佳化從高頻產生器102到電漿室100的功率轉移之效率。舉例來說，所呈現給濾波器的負載反射係數的絕對值的時間平均值可為最小化，且負載反射係數可使用至少等於低頻產生器108的頻率之頻寬而作測量(例如：藉由寬頻測量構件116或120)。亦預期到離開0+j0的負載反射係數的時間平均值被最佳化。 In various embodiments, the impedance presented by the plasma chamber 100 to the filter 104 is adjusted to optimize the efficiency of power transfer from the high frequency generator 102 to the plasma chamber 100. For example, the time average of the absolute value of the load reflection coefficient presented to the filter can be minimized, and the load reflection coefficient can be measured using a bandwidth at least equal to the frequency of the low frequency generator 108 (e.g., by a wideband measurement component 116 or 120). It is also contemplated that the time average of the load reflection coefficient away from 0+j0 is optimized.
再次參考圖7，在匹配網路106與濾波器104之間的纜線長度可作調整(例如：最佳化)以控制其關於混合結果為終止之阻抗(方塊750)。雖然纜線長度(在匹配網路與電漿處理室之間)是在其他電漿處理系統作調整(例如：為了穩定度)，然而當濾波器104被使用時，存有當選取此纜線長度時的另外考量，即：藉由濾波器104在混合結果之頻率所提供到電漿系統的終止阻抗；將濾波器104連接到匹配網路106的纜線；及匹配網路106。改變纜線長度將改變在濾波器104的負載側之調變性質。此纜線長度亦影響在多狀態應用中的頻率調諧；因此，此纜線長度的選取可能比在先前的電漿處理系統中更為複雜。 7, the length of the cable between the matching network 106 and the filter 104 can be adjusted (e.g., optimized) to control the impedance at which the mixing result is terminated (block 750). Although the cable length (between the matching network and the plasma processing chamber) is adjusted in other plasma processing systems (e.g., for stability), when the filter 104 is used, there are additional considerations when selecting the cable length, namely: the terminating impedance provided to the plasma system by the filter 104 at the frequency of the mixing result; the cable connecting the filter 104 to the matching network 106; and the matching network 106. Changing the cable length will change the modulation properties on the load side of the filter 104. The cable length also affects frequency tuning in multi-state applications; therefore, the selection of the cable length may be more complex than in previous plasma processing systems.
圖8A與8B是關於圖1所述的濾波器104之實施例的等效電路。圖8A顯示無損式原型的等效電路，且圖8B顯示當使用可實現的有損式構件而予以實施之濾波器104的等效電路。存在實現所述窄頻、高功率濾波器之其他方式(例如：使用大的環式共振器或腔部)，但在所有情況下，必須小心注意存在於如此濾波器中之高電壓、高電流、與高功率的耗散。 Figures 8A and 8B are equivalent circuits of an embodiment of the filter 104 described in Figure 1. Figure 8A shows the equivalent circuit of a lossless prototype, and Figure 8B shows the equivalent circuit of the filter 104 when implemented using realizable lossy components. There are other ways to implement the narrowband, high power filters (e.g., using large ring resonators or cavities), but in all cases, care must be taken to dissipate the high voltages, high currents, and high powers present in such filters.
接著參考圖9，顯示其設計有二個並聯的螺旋式共振器之水冷式 濾波器904的外部立體圖。濾波器含有用於使水流通過濾波器以供冷卻的二個水連接910與920、輸入連接器930、與輸出連接器(在此圖為見不到)。 Next, referring to FIG. 9, an external perspective view of a water-cooled filter 904 having two parallel spiral resonators is shown. The filter includes two water connections 910 and 920 for passing water through the filter for cooling, an input connector 930, and an output connector (not visible in this figure).
圖10是設計有二個並聯的螺旋式共振器之濾波器904的內部圖。如圖所示，螺旋式共振器各者包括中空螺旋線圈1020，且各個中空螺旋線圈1020被耦接到銅塊1024。銅帶1026從銅塊1024延伸，且陶瓷絕緣件1028使銅帶1026和銅塊1024為絕緣。在這實施方式中，金屬化1030被配置在陶瓷絕緣件1028以形成輸入與輸出電容器810與820。此外，各個中空螺旋線圈1020包括接地端1022。濾波器904亦包括封裝圓柱狀外殼1032(為了檢視濾波器104的內部構件而為透視描繪)，其環繞中空螺旋線圈1020與銅塊1024。 FIG. 10 is an internal diagram of a filter 904 designed with two parallel spiral resonators. As shown, each of the spiral resonators includes a hollow spiral coil 1020, and each hollow spiral coil 1020 is coupled to a copper block 1024. A copper strip 1026 extends from the copper block 1024, and a ceramic insulator 1028 insulates the copper strip 1026 from the copper block 1024. In this embodiment, metallization 1030 is disposed on the ceramic insulator 1028 to form input and output capacitors 810 and 820. In addition, each hollow spiral coil 1020 includes a ground terminal 1022. The filter 904 also includes an encapsulating cylindrical housing 1032 (depicted in perspective for viewing the internal components of the filter 104) that surrounds the hollow spiral coil 1020 and the copper block 1024.
圖11顯示濾波器904的剖視圖。此圖顯示銅帶1026為如何連接到輸入與輸出連接器1110與1140、到所形成在陶瓷絕緣件1120與1150之上的電容器。此圖亦顯示中空螺旋線圈1130與1160如何連接到銅塊1024。 FIG. 11 shows a cross-sectional view of filter 904. This figure shows how copper strip 1026 is connected to input and output connectors 1110 and 1140, to capacitors formed on ceramic insulators 1120 and 1150. This figure also shows how hollow helical coils 1130 and 1160 are connected to copper block 1024.
圖12顯示銅塊1240(在圖10的1024)的更多細節。此組件提供從輸入與輸出到螺旋式共振器之所需的電容耦合。歸因於所需電容器之小值、電容器須承受的高電壓、及電容器須耗散的功率，將電容器實施在陶瓷基板上被使用在濾波器的設計。銅塊含有水通道1210，中空螺旋線圈被附接(藉由例如焊接)到其中。形成在陶瓷絕緣件1220與1260之上的電容器因此為水冷卻的。陶瓷絕緣件分別具有正面與背面金屬化1280與1250。正面金屬化1280的尺寸控制由此組件所實現的電容。陶瓷絕緣件可使用導電環氧樹脂而被附接到銅塊1240。帶1270與1230可被焊接到正面金屬化且到輸入與輸出連接器1110與1140。 FIG. 12 shows more detail of the copper block 1240 (1024 in FIG. 10). This assembly provides the required capacitive coupling from the input and output to the spiral resonator. Due to the small value of the capacitor required, the high voltage that the capacitor must withstand, and the power that the capacitor must dissipate, implementing the capacitor on a ceramic substrate is used in the design of filters. The copper block contains a water channel 1210 to which the hollow spiral coil is attached (by, for example, welding). The capacitor formed on the ceramic insulators 1220 and 1260 is therefore water-cooled. The ceramic insulator has front and back metallization 1280 and 1250, respectively. The size of the front metallization 1280 controls the capacitance achieved by this assembly. The ceramic insulator can be attached to the copper block 1240 using a conductive epoxy. The strips 1270 and 1230 can be soldered to the front side metallization and to the input and output connectors 1110 and 1140.
圖13顯示濾波器904的分解圖。絕緣托架1310將中空螺旋線圈保持在適當位置且提供對於組件的機械穩定度。托架是由例如PTFE塑膠或陶瓷之適合的低損失介電材料所作成，且含有孔以允許封裝材料流通於其中。歸因於在此設計中可遭遇的高電壓，濾波器的高電壓區域被封裝(例如：使用矽介電凝 膠)以降低其歸因於空氣擊穿的失效風險。替代而言，整體組件可抽真空為高真空或填充有高品質的介電液體。 FIG. 13 shows an exploded view of filter 904. An insulating bracket 1310 holds the hollow helical coil in place and provides mechanical stability to the assembly. The bracket is made of a suitable low-loss dielectric material such as PTFE plastic or ceramic, and contains holes to allow the encapsulation material to flow therethrough. Due to the high voltages that may be encountered in this design, the high voltage areas of the filter are encapsulated (e.g., using silicone dielectric gel) to reduce the risk of failure due to air breakdown. Alternatively, the entire assembly may be evacuated to a high vacuum or filled with a high quality dielectric fluid.
應理解的是，鑒於本記載內容，本領域此技術人士能夠設計中空螺旋線圈1020的層面(例如：匝數、半徑、長度、間距、內部與外部線圈直徑、與線圈的外徑)以達成期望的頻寬與散熱。亦應理解的是，在圖9-13所描繪之濾波器904的設計上的變化必定為所預期。 It should be understood that, in light of the present disclosure, one skilled in the art will be able to design aspects of the hollow helical coil 1020 (e.g., number of turns, radius, length, spacing, inner and outer coil diameters, and outer diameter of the coil) to achieve desired bandwidth and heat dissipation. It should also be understood that variations in the design of the filter 904 depicted in FIGS. 9-13 are certainly contemplated.
使用接近在低頻的共振或共振的電感側之螺旋式共振器而非電感器以達成相較於使用電感器的設計之類似頻寬，但相比使用電感器的設計，螺旋式共振器提供較小有效電感。此外，使用並聯的二個共振器允許整個組件之接地連接式水冷卻，其中水系統可維持接地。更明確而言，從接地連接式水系統所提供的水被饋送通過中空螺旋線圈1020，致使大量的熱被消散。舉例來說，濾波器904(與濾波器904的變化)可操作在相當高功率位準(例如：在1kW到30kW功率範圍中)。經由其設計，濾波器904(與其變化例)可操作在相當高功率位準而且以至少75%的效率來操作。 A spiral resonator is used rather than an inductor near resonance or the inductive side of resonance at low frequencies to achieve similar bandwidths compared to designs using inductors, but the spiral resonator provides a smaller effective inductance than designs using inductors. In addition, the use of two resonators in parallel allows for ground-connected water cooling of the entire assembly, where the water system can be maintained at ground. More specifically, water provided from the ground-connected water system is fed through the hollow spiral coil 1020, causing a large amount of heat to be dissipated. For example, filter 904 (and variations of filter 904) can operate at relatively high power levels (e.g., in the 1 kW to 30 kW power range). By design, filter 904 (and variations thereof) can operate at relatively high power levels and operate at an efficiency of at least 75%.
圖14顯示具有調諧芯塊(slug)之濾波器1404。調諧可能歸因於構件製造容許度而為需要以供設定濾波器的頻率，但亦可能為主動調整以補償歸因於例如濾波器1404的自熱而在構件值的變化。調諧芯塊1420與1440可例如為鐵氧體桿，其可沿著描繪的Y軸而移動在中空螺旋線圈1020之內，但更典型而言，調諧芯塊可由銅所作成。由適合的絕緣體(例如：PTFE塑膠)所作成之杯狀部1410與1430提供無封裝化合物的區域，其中，調諧芯塊可被移動。 FIG. 14 shows a filter 1404 with a tuning slug. Tuning may be necessary due to component manufacturing tolerances to set the filter frequency, but may also be active adjustment to compensate for variations in component values due to, for example, self-heating of the filter 1404. The tuning slugs 1420 and 1440 may be, for example, ferrite rods that are movable within the hollow helical coil 1020 along the depicted Y axis, but more typically the tuning slugs may be made of copper. Cups 1410 and 1430 made of a suitable insulator (e.g., PTFE plastic) provide an area free of encapsulating compound in which the tuning slugs may be moved.
濾波器104、804B、904、1404之使用將於其上可進行頻率調諧(用於阻抗匹配)的頻率範圍壓縮到極小的頻率範圍。此需要不同方式以處理產生器的多狀態操作。多狀態操作的實例可切換在多個功率位準之間，其中，各個功率位準代表一個狀態，且其中，高頻產生器102歸因於電漿之非線性的性 質而在各個狀態看見不同的負載阻抗，且其中，高頻產生器102在各個狀態可操作於不同頻率，藉以改善針對於所述狀態的阻抗匹配或穩定度。為了有利於在使用濾波器104之系統中的多狀態操作，可能必須確保的是，針對於不同狀態所呈現給濾波器104的負載側之阻抗是置於沿著或接近可藉由頻率調諧高頻產生器102的頻率加以匹配之阻抗線。此可藉由將諸如延遲構件112之固定或可變時間延遲附加在濾波器的負載側而作成。 The use of filters 104, 804B, 904, 1404 compresses the frequency range over which frequency tuning (for impedance matching) can be performed to a very small frequency range. This requires a different approach to handle multi-state operation of the generator. An example of multi-state operation may be switching between multiple power levels, where each power level represents a state, and where the high frequency generator 102 sees a different load impedance in each state due to the nonlinear nature of the plasma, and where the high frequency generator 102 may operate at a different frequency in each state to improve impedance matching or stability for that state. To facilitate multi-state operation in a system using filter 104, it may be necessary to ensure that the impedance presented to the load side of filter 104 for the different states is placed along or close to an impedance line that can be matched by frequency tuning the high frequency generator 102. This can be accomplished by adding a fixed or variable time delay such as delay element 112 to the load side of the filter.
接著參考圖15，圖示為描繪可關連於本文記載的實施例所實行之方法的流程圖1500。如圖所示，具有多狀態波形的功率是用高頻產生器102而施加到電漿室100(方塊1510)，且功率亦為用低頻產生器1082而施加到電漿室100(方塊1520)。高與低頻的混合結果是用濾波器104來抑制(方塊1530)。且如圖所示，在濾波器104與電漿室100之間的功率訊號被延遲(方塊1540)，且高頻產生器102的頻率是在各個狀態期間被調整以調整所呈現給高頻產生器的阻抗(方塊1550)。 Referring next to FIG. 15 , a flow chart 1500 is shown depicting a method that may be performed in connection with embodiments described herein. As shown, power having a multi-state waveform is applied to the plasma chamber 100 using the high frequency generator 102 (block 1510), and power is also applied to the plasma chamber 100 using the low frequency generator 1082 (block 1520). The mixed results of the high and low frequencies are suppressed using the filter 104 (block 1530). And as shown, the power signal is delayed between the filter 104 and the plasma chamber 100 (block 1540), and the frequency of the high frequency generator 102 is adjusted during each state to adjust the impedance presented to the high frequency generator (block 1550).
準確的功率測量可能需要以充分捕捉充分量的混合結果之頻寬來測量在濾波器之負載側的功率。這是因為濾波器104的效率取決於所呈現給濾波器104的負載阻抗軌跡。在濾波器104的高頻產生器102一側之測量可能未提供所遞送給電漿負載的功率之準確測量，因為在於很難甚至不是不可能考量濾波器104的效率。 Accurate power measurement may require measuring the power on the load side of the filter with a bandwidth sufficient to capture a sufficient amount of mixing results. This is because the efficiency of the filter 104 depends on the load impedance trajectory presented to the filter 104. Measurements on the high frequency generator 102 side of the filter 104 may not provide an accurate measurement of the power delivered to the plasma load because it is difficult, if not impossible, to account for the efficiency of the filter 104.
本領域技術人士將瞭解的是，資訊與訊號可使用種種不同技術的任一者來代表。舉例來說，可能在上述說明中所提到之資料、指令、命令、資訊、訊號、位元、符號、與晶片可由電壓、電流、電磁波、磁場或粒子、光場或粒子、或其任何組合所代表。 Those skilled in the art will appreciate that information and signals may be represented using any of a variety of different technologies. For example, data, instructions, commands, information, signals, bits, symbols, and chips that may be mentioned in the above description may be represented by voltage, current, electromagnetic waves, magnetic fields or particles, optical fields or particles, or any combination thereof.
本領域技術人士將進而理解的是，關連於本文記載的實施例所述之種種說明性的邏輯方塊、模組、電路、與演算法步驟可經實施為電子硬 體、電腦軟體、或二者的組合。關連於本文記載的實施例所述之種種說明性的邏輯方塊、模組、與電路可以通用處理器、數位訊號處理器(DSP,digital signal processor)、特定應用積體電路(ASIC,application specific integrated circuit)、場可程式閘陣列(FPGA,field programmable gate array)或其他可程式邏輯裝置、離散的閘或電晶體邏輯、離散的硬體構件、或設計以實行本文記載的功能之其任何組合來實施或實行。通用處理器可為微處理器，但替代而言，處理器可為任何習用的處理器、控制器、微控制器、或狀態機器。處理器亦可實施為計算裝置之組合，例如：DSP與微處理器之組合、複數個微處理器、結合DSP核心之一個或多個微處理器、或任何其他所述組態。 It will be further understood by those skilled in the art that the various illustrative logic blocks, modules, circuits, and algorithm steps described in connection with the embodiments described herein may be implemented as electronic hardware, computer software, or a combination of both. The various illustrative logic blocks, modules, and circuits described in connection with the embodiments described herein may be implemented or performed by a general purpose processor, a digital signal processor (DSP), an application specific integrated circuit (ASIC), a field programmable gate array (FPGA) or other programmable logic device, discrete gate or transistor logic, discrete hardware components, or any combination thereof designed to perform the functions described herein. A general purpose processor may be a microprocessor, but alternatively, the processor may be any conventional processor, controller, microcontroller, or state machine. The processor may also be implemented as a combination of computing devices, such as a combination of a DSP and a microprocessor, a plurality of microprocessors, one or more microprocessors combined with a DSP core, or any other such configuration.
關連於本文記載實施例所述之方法或演算法的步驟可直接用硬體、用處理器所執行的軟體模組、或用二者之組合而實施。軟體模組可存在於RAM記憶體、快閃記憶體、ROM記憶體、EPROM記憶體、EEPROM記憶體、暫存器、硬碟、可移除式碟、CD-ROM、或在本領域習知之任何其他形式的儲存媒體。範例的儲存媒體被耦接到處理器，俾使處理器可讀取來自儲存媒體的資訊且將資訊寫入到儲存媒體。替代而言，儲存媒體可整合於處理器。處理器與儲存媒體可存在於ASIC。ASIC可存在於使用者終端。替代而言，處理器與儲存媒體可如同離散構件而存在於使用者終端。 The steps of the methods or algorithms described in the embodiments described herein may be implemented directly in hardware, in a software module executed by a processor, or in a combination of the two. The software module may be present in RAM memory, flash memory, ROM memory, EPROM memory, EEPROM memory, cache, hard disk, removable disk, CD-ROM, or any other form of storage medium known in the art. The exemplary storage medium is coupled to the processor so that the processor can read information from the storage medium and write information to the storage medium. Alternatively, the storage medium may be integrated into the processor. The processor and the storage medium may be present in an ASIC. The ASIC may be present in a user terminal. Alternatively, the processor and storage medium may exist as discrete components on the user terminal.
參考圖16，圖示者可關連於本文記載的實施例所利用之計算系統1600的實例。如圖所示，顯示部分1612與非依電性記憶體1620被耦接到匯流排1622，其亦耦接到隨機存取記憶體(RAM,random access memory)1624、處理部分(其包括N個處理構件)1626、場可程式閘陣列(FPGA)1627、以及包括N個收發器的收發器構件1628。雖然在圖16所繪的構件代表實際的構件，圖16並無意為詳細的硬體圖；因此，在圖16所繪的諸多構件可由共同建構、或分散在另外的實際構件之間而實現。甚者，預期的是，其他現存與尚待開發的實際構件 與架構可被利用來實施有關於圖16所述的作用構件。 Referring to FIG. 16 , an example of a computing system 1600 that may be used in accordance with the embodiments described herein is illustrated. As shown, a display portion 1612 and a non-volatile memory 1620 are coupled to a bus 1622, which is also coupled to a random access memory (RAM) 1624, a processing portion (which includes N processing components) 1626, a field programmable gate array (FPGA) 1627, and a transceiver component 1628 including N transceivers. Although the components depicted in FIG. 16 represent actual components, FIG. 16 is not intended to be a detailed hardware diagram; therefore, many of the components depicted in FIG. 16 may be implemented by being co-constructed or distributed among other actual components. Furthermore, it is contemplated that other existing and yet to be developed practical components and architectures may be utilized to implement the functional components described with respect to FIG. 16 .
此顯示部分1612概括操作以提供用於使用者的使用者介面，且在數個實施中，顯示是藉由觸控螢幕顯示器來實現。概括而言，非依電性記憶體1620為非暫時記憶體，其作用以儲存(例如：持續儲存)資料與機器可讀取(例如：處理器可執行)碼(包括：關聯於實施本文所述方法的可執行碼)。在一些實施例，舉例來說，非依電性記憶體1620包括啟動載入碼、作業系統碼、檔案系統碼、與非暫時處理器可執行碼，以利於本文進一步描述之關於圖4與5所述方法之執行。 This display portion 1612 generally operates to provide a user interface for a user, and in several implementations, the display is implemented by a touch screen display. In general, the non-volatile memory 1620 is a non-transitory memory that functions to store (e.g., persist) data and machine-readable (e.g., processor-executable) code (including executable code associated with implementing the methods described herein). In some embodiments, for example, the non-volatile memory 1620 includes boot loader code, operating system code, file system code, and non-transitory processor executable code to facilitate the execution of the methods described in Figures 4 and 5 further described herein.
在諸多實施中，非依電性記憶體1620是由快閃記憶體(例如：NAND或ONENAND記憶體)所實現，但預期的是可同樣利用其他記憶體型式。雖然可能執行來自非依電性記憶體1620的碼，在非依電性記憶體中的可執行碼典型為載入到RAM 1624且由處理部分1626之中的N個處理構件的一者或多者加以執行。 In many implementations, non-volatile memory 1620 is implemented as flash memory (e.g., NAND or ONENAND memory), but it is contemplated that other memory types may be utilized as well. While it is possible to execute code from non-volatile memory 1620, the executable code in the non-volatile memory is typically loaded into RAM 1624 and executed by one or more of the N processing components in processing portion 1626.
在操作時，關連於RAM 1624之N個處理構件可概括操作以執行在非依電性記憶體1620上儲存的指令，來實現寬頻測量系統116、120的層面且控制高頻產生器102的層面(例如：頻率調諧層面)與匹配網路106。舉例來說，用以實行關於圖7與15所述方法的觀點之非暫時處理器可執行指令可持續儲存在非依電性記憶體1620且由關連於RAM 1624之N個處理構件加以執行。如在本領域的一般人士將理解，處理部分1626可包括視訊處理器、數位訊號處理器(DSP)、圖形處理單元(GPU,graphics processing unit)、與其他處理構件。 In operation, the N processing components associated with the RAM 1624 may generally operate to execute instructions stored on the non-volatile memory 1620 to implement aspects of the broadband measurement systems 116, 120 and control aspects of the high frequency generator 102 (e.g., frequency tuning aspects) and the matching network 106. For example, non-transitory processor executable instructions for implementing aspects of the methods described with respect to FIGS. 7 and 15 may be persistently stored in the non-volatile memory 1620 and executed by the N processing components associated with the RAM 1624. As will be understood by those skilled in the art, the processing portion 1626 may include a video processor, a digital signal processor (DSP), a graphics processing unit (GPU), and other processing components.
此外或替代而言，場可程式閘陣列(FPGA)1627可經配置以實行本文所述方法(例如：關於圖7與15所述方法)的一個或多個觀點。舉例來說，非暫時FPGA組態指令可持續儲存在非依電性記憶體1620且由FPGA 1627(例如：在啟動期間)所存取，以配置FPGA 627來實現寬頻測量系統116、120的層面且 控制高頻產生器102的層面(例如：頻率調諧層面)與匹配網路106。 Additionally or alternatively, a field programmable gate array (FPGA) 1627 may be configured to implement one or more aspects of the methods described herein (e.g., the methods described with respect to FIGS. 7 and 15 ). For example, non-transient FPGA configuration instructions may be persistently stored in non-volatile memory 1620 and accessed by FPGA 1627 (e.g., during startup) to configure FPGA 627 to implement aspects of broadband measurement systems 116 , 120 and control aspects of high frequency generator 102 (e.g., frequency tuning aspects) and matching network 106 .
輸入構件可操作以接收表示功率的一個或多個層面之訊號(例如：來自感測器114、118)。在輸入構件所接收的訊號可包括例如電壓、電流、順向功率、反射功率與電漿負載阻抗。輸出構件概括操作以提供一個或多個類比或數位訊號，來實行高頻產生器102、低頻產生器108、匹配網路106、及/或寬頻測量系統116、120的操作層面。舉例來說，輸出部分可提供由高頻產生器102、低頻產生器108、匹配網路106、及/或寬頻測量系統116、120所利用的控制訊號。 The input component is operable to receive signals representing one or more aspects of power (e.g., from sensors 114, 118). The signals received at the input component may include, for example, voltage, current, forward power, reflected power, and plasma load impedance. The output component generally operates to provide one or more analog or digital signals to implement the operating aspects of the high frequency generator 102, the low frequency generator 108, the matching network 106, and/or the broadband measurement system 116, 120. For example, the output portion may provide control signals utilized by the high frequency generator 102, the low frequency generator 108, the matching network 106, and/or the broadband measurement system 116, 120.
描繪的收發器構件628包括N個收發器鏈路，其可使用以供經由無線或有線網路來和外部裝置進行通訊。N個收發器鏈路各者可代表和特定通訊方式(例如：WiFi、乙太網路、Profibus、等等)有關聯的收發器。 The depicted transceiver component 628 includes N transceiver links that can be used to communicate with external devices via a wireless or wired network. Each of the N transceiver links can represent a transceiver associated with a specific communication method (e.g., WiFi, Ethernet, Profibus, etc.).
記載實施例的先前描述被提供以致使本領域技術人士能夠作成或使用本發明。對於這些實施例的種種修改將對於本領域技術人士為顯於易見，且本文所界定的概括原理可在沒有脫離本發明精神或範疇的情況下應用到其他實施例。因此，本發明並無意受限於本文所例示的實施例，而是給予其符合在本文所記載的原理與新穎特徵之最廣範疇。 The previous description of the embodiments is provided to enable one skilled in the art to make or use the invention. Various modifications to these embodiments will be apparent to one skilled in the art, and the general principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Therefore, the invention is not intended to be limited to the embodiments illustrated herein, but rather to be given the widest scope consistent with the principles and novel features described herein.
100:電漿室 100: Plasma chamber
102:高頻產生器 102: High frequency generator
104:濾波器 104: Filter
106、110:匹配網路 106, 110: Matching network
108:低頻產生器 108:Low frequency generator
112:延遲構件 112: Delayed components
114、118:感測器 114, 118: Sensor
116、120:寬頻測量系統 116, 120: Broadband measurement system
122、124:連接 122, 124: Connection
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Families Citing this family (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10555412B2 (en) | 2018-05-10 | 2020-02-04 | Applied Materials, Inc. | Method of controlling ion energy distribution using a pulse generator with a current-return output stage |
| US10896771B2 (en) * | 2018-09-14 | 2021-01-19 | Volt Holdings, LLC | Power cable with an overmolded probe for power transfer to a non-thermal plasma generator and a method for constructing the overmolded probe |
| US11476145B2 (en) | 2018-11-20 | 2022-10-18 | Applied Materials, Inc. | Automatic ESC bias compensation when using pulsed DC bias |
| US11804362B2 (en) * | 2018-12-21 | 2023-10-31 | Advanced Energy Industries, Inc. | Frequency tuning for modulated plasma systems |
| US11515123B2 (en) * | 2018-12-21 | 2022-11-29 | Advanced Energy Industries, Inc. | Apparatus and system for modulated plasma systems |
| CN113169026B (en) | 2019-01-22 | 2024-04-26 | 应用材料公司 | Feedback loop for controlling pulse voltage waveform |
| US11508554B2 (en) | 2019-01-24 | 2022-11-22 | Applied Materials, Inc. | High voltage filter assembly |
| US11232931B2 (en) | 2019-10-21 | 2022-01-25 | Mks Instruments, Inc. | Intermodulation distortion mitigation using electronic variable capacitor |
| US11462389B2 (en) | 2020-07-31 | 2022-10-04 | Applied Materials, Inc. | Pulsed-voltage hardware assembly for use in a plasma processing system |
| KR102593141B1 (en) * | 2020-11-05 | 2023-10-25 | 세메스 주식회사 | Apparatus for treating substrate and method for treating apparatus |
| US11901157B2 (en) | 2020-11-16 | 2024-02-13 | Applied Materials, Inc. | Apparatus and methods for controlling ion energy distribution |
| US11798790B2 (en) | 2020-11-16 | 2023-10-24 | Applied Materials, Inc. | Apparatus and methods for controlling ion energy distribution |
| JP6928407B1 (en) * | 2021-03-15 | 2021-09-01 | 株式会社アドテックプラズマテクノロジー | High-frequency power supply that can arbitrarily set the time-dependent change pattern of the high-frequency power to be output |
| US11495470B1 (en) | 2021-04-16 | 2022-11-08 | Applied Materials, Inc. | Method of enhancing etching selectivity using a pulsed plasma |
| US11948780B2 (en) | 2021-05-12 | 2024-04-02 | Applied Materials, Inc. | Automatic electrostatic chuck bias compensation during plasma processing |
| US11791138B2 (en) | 2021-05-12 | 2023-10-17 | Applied Materials, Inc. | Automatic electrostatic chuck bias compensation during plasma processing |
| US11967483B2 (en) | 2021-06-02 | 2024-04-23 | Applied Materials, Inc. | Plasma excitation with ion energy control |
| US20220399185A1 (en) | 2021-06-09 | 2022-12-15 | Applied Materials, Inc. | Plasma chamber and chamber component cleaning methods |
| US11810760B2 (en) | 2021-06-16 | 2023-11-07 | Applied Materials, Inc. | Apparatus and method of ion current compensation |
| US11569066B2 (en) | 2021-06-23 | 2023-01-31 | Applied Materials, Inc. | Pulsed voltage source for plasma processing applications |
| US11776788B2 (en) | 2021-06-28 | 2023-10-03 | Applied Materials, Inc. | Pulsed voltage boost for substrate processing |
| US11476090B1 (en) | 2021-08-24 | 2022-10-18 | Applied Materials, Inc. | Voltage pulse time-domain multiplexing |
| TW202329195A (en) * | 2021-09-08 | 2023-07-16 | 美商蘭姆研究公司 | Hybrid frequency plasma source |
| US11694876B2 (en) | 2021-12-08 | 2023-07-04 | Applied Materials, Inc. | Apparatus and method for delivering a plurality of waveform signals during plasma processing |
| US11972924B2 (en) | 2022-06-08 | 2024-04-30 | Applied Materials, Inc. | Pulsed voltage source for plasma processing applications |
| WO2024136245A1 (en) * | 2022-12-23 | 2024-06-27 | 주식회사 에프엔에스 | Electromagnetic wave filter and plasma substrate processing device comprising same |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7156949B2 (en) * | 2000-07-19 | 2007-01-02 | Tokyo Electron Limited | Plasma processing apparatus |
| TW200845090A (en) * | 2007-01-30 | 2008-11-16 | Applied Materials Inc | Improving plasma process uniformity across a wafer by apportioning power among plural VHF sources |
| US9773643B1 (en) * | 2016-06-30 | 2017-09-26 | Lam Research Corporation | Apparatus and method for deposition and etch in gap fill |
| US20180025930A1 (en) * | 2016-07-25 | 2018-01-25 | Lam Research Corporation | Control of wafer bow in multiple stations |
Family Cites Families (47)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3733608A (en) | 1971-12-09 | 1973-05-15 | Motorola Inc | Circuit for coupling radio receiver and radio transmitter to a common antenna for duplex operation |
| DE69509046T2 (en) | 1994-11-30 | 1999-10-21 | Applied Materials Inc | Plasma reactors for the treatment of semiconductor wafers |
| US6020794A (en) | 1998-02-09 | 2000-02-01 | Eni Technologies, Inc. | Ratiometric autotuning algorithm for RF plasma generator |
| US6046641A (en) | 1998-07-22 | 2000-04-04 | Eni Technologies, Inc. | Parallel HV MOSFET high power stable amplifier |
| US6887339B1 (en) | 2000-09-20 | 2005-05-03 | Applied Science And Technology, Inc. | RF power supply with integrated matching network |
| US6562190B1 (en) | 2000-10-06 | 2003-05-13 | Lam Research Corporation | System, apparatus, and method for processing wafer using single frequency RF power in plasma processing chamber |
| US6631693B2 (en) * | 2001-01-30 | 2003-10-14 | Novellus Systems, Inc. | Absorptive filter for semiconductor processing systems |
| US6587019B2 (en) * | 2001-04-11 | 2003-07-01 | Eni Technology, Inc. | Dual directional harmonics dissipation system |
| US6537421B2 (en) | 2001-07-24 | 2003-03-25 | Tokyo Electron Limited | RF bias control in plasma deposition and etch systems with multiple RF power sources |
| JP2004152606A (en) * | 2002-10-30 | 2004-05-27 | Matsushita Electric Ind Co Ltd | High-frequency power source device |
| US7049751B2 (en) | 2003-07-16 | 2006-05-23 | Advanced Energy Industries, Inc | Termination of secondary frequencies in RF power delivery |
| US7042311B1 (en) | 2003-10-10 | 2006-05-09 | Novellus Systems, Inc. | RF delivery configuration in a plasma processing system |
| US7780814B2 (en) | 2005-07-08 | 2010-08-24 | Applied Materials, Inc. | Wafer pre-clean reactor cable termination for selective suppression/reflection of source and bias frequency cross products |
| JP2008019494A (en) * | 2006-07-14 | 2008-01-31 | Canon Inc | Plasma treatment apparatus and plasma treatment method |
| US11389171B2 (en) * | 2006-11-21 | 2022-07-19 | David S. Goldsmith | Integrated system for the infixion and retrieval of implants |
| JP5319150B2 (en) | 2008-03-31 | 2013-10-16 | 東京エレクトロン株式会社 | Plasma processing apparatus, plasma processing method, and computer-readable storage medium |
| US7970562B2 (en) * | 2008-05-07 | 2011-06-28 | Advanced Energy Industries, Inc. | System, method, and apparatus for monitoring power |
| US7967944B2 (en) * | 2008-05-29 | 2011-06-28 | Applied Materials, Inc. | Method of plasma load impedance tuning by modulation of an unmatched low power RF generator |
| US20090297404A1 (en) * | 2008-05-29 | 2009-12-03 | Applied Materials, Inc. | Plasma reactor with high speed plasma impedance tuning by modulation of source power or bias power |
| US8018164B2 (en) * | 2008-05-29 | 2011-09-13 | Applied Materials, Inc. | Plasma reactor with high speed plasma load impedance tuning by modulation of different unmatched frequency sources |
| US7811410B2 (en) * | 2008-06-19 | 2010-10-12 | Lam Research Corporation | Matching circuit for a complex radio frequency (RF) waveform |
| GB0823565D0 (en) * | 2008-12-24 | 2009-01-28 | Oxford Instr Plasma Technology | Signal generating system |
| JP5705290B2 (en) * | 2009-01-15 | 2015-04-22 | 株式会社日立ハイテクノロジーズ | Plasma processing equipment |
| JP5405261B2 (en) * | 2009-10-07 | 2014-02-05 | 日本アンテナ株式会社 | Variable capacitors and bandpass filters |
| US8330432B2 (en) * | 2009-12-22 | 2012-12-11 | Advanced Energy Industries, Inc | Efficient active source impedance modification of a power amplifier |
| CN103348414B (en) * | 2011-02-15 | 2016-09-28 | 富士电机株式会社 | Resin volume reduction treatment device and method of work thereof with radioactive substance |
| US9059678B2 (en) * | 2011-04-28 | 2015-06-16 | Lam Research Corporation | TCCT match circuit for plasma etch chambers |
| DE102011080035A1 (en) * | 2011-07-28 | 2013-01-31 | Hüttinger Elektronik Gmbh + Co. Kg | Method and device for protecting passive components connected to a high frequency generator |
| JP5817906B2 (en) * | 2012-02-23 | 2015-11-18 | 東京エレクトロン株式会社 | Plasma processing apparatus and high frequency generator |
| JP2013250231A (en) * | 2012-06-04 | 2013-12-12 | Daihen Corp | Phase difference detection device, phase difference detection program, and plasma processing system using phase difference detection device |
| US9082589B2 (en) * | 2012-10-09 | 2015-07-14 | Novellus Systems, Inc. | Hybrid impedance matching for inductively coupled plasma system |
| US9337000B2 (en) * | 2013-10-01 | 2016-05-10 | Lam Research Corporation | Control of impedance of RF return path |
| WO2014094738A2 (en) * | 2012-12-18 | 2014-06-26 | TRUMPF Hüttinger GmbH + Co. KG | Arc extinguishing method and power supply system having a power converter |
| US9536713B2 (en) * | 2013-02-27 | 2017-01-03 | Advanced Energy Industries, Inc. | Reliable plasma ignition and reignition |
| US20140262031A1 (en) * | 2013-03-12 | 2014-09-18 | Sergey G. BELOSTOTSKIY | Multi-mode etch chamber source assembly |
| US9460894B2 (en) * | 2013-06-28 | 2016-10-04 | Lam Research Corporation | Controlling ion energy within a plasma chamber |
| US9635750B2 (en) * | 2013-10-23 | 2017-04-25 | Perkinelmer Health Sciences, Inc. | Oscillator generators and methods of using them |
| US10224184B2 (en) * | 2014-03-24 | 2019-03-05 | Aes Global Holdings, Pte. Ltd | System and method for control of high efficiency generator source impedance |
| KR20160028612A (en) * | 2014-09-03 | 2016-03-14 | 삼성전자주식회사 | Semiconductor fabricating apparatus and method of fabricating semiconductor device using the same |
| US10340879B2 (en) * | 2015-02-18 | 2019-07-02 | Reno Technologies, Inc. | Switching circuit |
| US9595424B2 (en) * | 2015-03-02 | 2017-03-14 | Lam Research Corporation | Impedance matching circuit for operation with a kilohertz RF generator and a megahertz RF generator to control plasma processes |
| US9596744B2 (en) * | 2015-03-31 | 2017-03-14 | Lam Research Corporation | Radio frequency generator having multiple mutually exclusive oscillators for use in plasma processing |
| US9721759B1 (en) * | 2016-04-04 | 2017-08-01 | Aixtron Se | System and method for distributing RF power to a plasma source |
| US10187032B2 (en) * | 2016-06-17 | 2019-01-22 | Lam Research Corporation | Combiner and distributor for adjusting impedances or power across multiple plasma processing stations |
| US10026592B2 (en) * | 2016-07-01 | 2018-07-17 | Lam Research Corporation | Systems and methods for tailoring ion energy distribution function by odd harmonic mixing |
| US10283330B2 (en) * | 2016-07-25 | 2019-05-07 | Lam Research Corporation | Systems and methods for achieving a pre-determined factor associated with an edge region within a plasma chamber by synchronizing main and edge RF generators |
| GB2562110A (en) * | 2017-05-05 | 2018-11-07 | Creo Medical Ltd | Apparatus for sterilising an instrument channel of a surgical scoping device |
-
2018
- 2018-12-21 US US16/230,923 patent/US10720305B2/en active Active
-
2019
- 2019-09-23 CN CN201980085302.4A patent/CN113243144A/en active Pending
- 2019-09-23 KR KR1020217022836A patent/KR20210104856A/en active Search and Examination
- 2019-09-23 WO PCT/US2019/052391 patent/WO2020131180A1/en unknown
- 2019-09-23 JP JP2021535648A patent/JP7482879B2/en active Active
- 2019-09-23 EP EP19901022.4A patent/EP3900497B1/en active Active
- 2019-10-01 TW TW108135497A patent/TWI839393B/en active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7156949B2 (en) * | 2000-07-19 | 2007-01-02 | Tokyo Electron Limited | Plasma processing apparatus |
| TW200845090A (en) * | 2007-01-30 | 2008-11-16 | Applied Materials Inc | Improving plasma process uniformity across a wafer by apportioning power among plural VHF sources |
| US9773643B1 (en) * | 2016-06-30 | 2017-09-26 | Lam Research Corporation | Apparatus and method for deposition and etch in gap fill |
| US20180025930A1 (en) * | 2016-07-25 | 2018-01-25 | Lam Research Corporation | Control of wafer bow in multiple stations |
Also Published As
| Publication number | Publication date |
|---|---|
| JP7482879B2 (en) | 2024-05-14 |
| WO2020131180A1 (en) | 2020-06-25 |
| TW202038291A (en) | 2020-10-16 |
| CN113243144A (en) | 2021-08-10 |
| EP3900497B1 (en) | 2024-06-12 |
| JP2022514377A (en) | 2022-02-10 |
| KR20210104856A (en) | 2021-08-25 |
| US10720305B2 (en) | 2020-07-21 |
| EP3900497A4 (en) | 2022-08-17 |
| US20200203119A1 (en) | 2020-06-25 |
| EP3900497A1 (en) | 2021-10-27 |
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