TWI837291B - Expansion method and method of manufacturing semiconductor device - Google Patents

Expansion method and method of manufacturing semiconductor device Download PDF

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TWI837291B
TWI837291B TW109103019A TW109103019A TWI837291B TW I837291 B TWI837291 B TW I837291B TW 109103019 A TW109103019 A TW 109103019A TW 109103019 A TW109103019 A TW 109103019A TW I837291 B TWI837291 B TW I837291B
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substrate
adhesive sheet
adhesive layer
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TW202036741A (en
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布施啓示
稲男洋一
山田忠知
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日商琳得科股份有限公司
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J201/00—Adhesives based on unspecified macromolecular compounds
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • C09J7/38—Pressure-sensitive adhesives [PSA]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
    • C09J2301/312—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier parameters being the characterizing feature
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/40—Additional features of adhesives in the form of films or foils characterized by the presence of essential components
    • C09J2301/416—Additional features of adhesives in the form of films or foils characterized by the presence of essential components use of irradiation

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Dicing (AREA)
  • Adhesive Tapes (AREA)
  • Adhesives Or Adhesive Processes (AREA)

Abstract

一種擴展方法，其係對具有第1晶圓面及第2晶圓面之晶圓的第2晶圓面黏貼具有第1黏著劑層(12)及第1基材(11)的第1黏著薄片(10)，劃出深度50μm之切口的第1基材(11)的拉伸伸度為300%以上，從第1晶圓面側劃出切口，將晶圓單片化成複數個晶片(CP)，進一步將第1黏著薄片(10)之第1黏著劑層(12)切斷，將第1黏著薄片(10)拉伸，而擴大複數個晶片(CP)之間隔。 An expansion method, which is to adhere a first adhesive sheet (10) having a first adhesive layer (12) and a first substrate (11) to the second wafer surface of a wafer having a first wafer surface and a second wafer surface, cut a 50μm-deep cut in the first substrate (11) with a tensile elongation of more than 300%, cut a cut from the side of the first wafer surface, singulate the wafer into a plurality of chips (CP), further cut the first adhesive layer (12) of the first adhesive sheet (10), stretch the first adhesive sheet (10), and expand the interval between the plurality of chips (CP).

Description

擴展方法及半導體裝置之製造方法Expanding method and manufacturing method of semiconductor device

本發明係有關於一種擴展方法及半導體裝置之製造方法。 The present invention relates to an expansion method and a method for manufacturing a semiconductor device.

近年來，電子設備的小型化、輕量化及高機能化持續發展。電子設備所搭載的半導體裝置亦要求小型化、薄型化及高密度化。半導體晶片有時會安裝於接近其尺寸的封裝體。此種封裝體亦有稱為晶片級封裝體(Chip Scale Package；CSP)。作為CSP之一，可舉出晶圓級封裝體(Wafer Level Package；WLP)。就WLP而言，係在藉由切割予以單片化前，於晶圓形成外部電極等，最終將晶圓切割而予以單片化。作為WLP，可舉出扇入(Fan-In)型與扇出(Fan-Out)型。就扇出型WLP(以下有簡稱為「FO-WLP」)而言，係將半導體晶片以形成大於晶片尺寸之區域的方式以密封構件予以被覆而形成半導體晶片密封體，並將再配線層或外部電極形成於半導體晶片的電路面以及密封構件的表面區域。 舉例而言，文獻1(國際公開第2010/058646號)中記載一種半導體封裝體之製造方法，其係針對由半導體晶圓單片化的複數個半導體晶片，保留其電路形成面，使用模製構件包圍其四周而形成擴展晶圓，且於半導體晶片外的區域將再配線圖型延伸而形成。在文獻1所記載之製造方法中，係在將經單片化的複數個半導體晶片以模製構件包圍前換貼擴展用之晶圓安裝膠帶，並將晶圓安裝膠帶延伸而使複數個半導體晶片之間的距離擴大。 此外，文獻2(日本特開2017-076748號公報)中記載一種黏著薄片，其係依序具備第二基材層、第一基材層與第一黏著劑層，且第二基材層的斷裂延伸度為400%以上。文獻2所記載之半導體裝置之製造方法係具備：於此黏著薄片之第一黏著劑層黏貼半導體晶圓之步驟；將半導體晶圓藉由切割予以單片化，而形成複數個半導體晶片之步驟；及將黏著薄片拉伸而擴大半導體晶片彼此之間隔之步驟。 於文獻1所記載之製造方法中，由於將半導體晶圓單片化時所使用之膠帶與為了擴大半導體晶片之間的距離而擴大膠帶時所使用之膠帶不同，因此需要換貼膠帶。 於文獻2所記載之半導體裝置之製造方法中，將半導體晶圓單片化時所使用之黏著薄片與擴大半導體晶片之間的距離時所使用之黏著薄片係相同。然而，文獻2中所使用之黏著薄片由於為第二基材層、第一基材層與第一黏著劑層層合而成的薄片構成，而有因應能以更簡略之膠帶構成進行切割及擴展之方法的要求。又，於文獻2所記載之製程中，為了防止切割時的切割刀達到第二基材層，而需要謹慎地控制切割刀的切口深度。因此，亦有因應更簡單之擴展方法的要求。In recent years, the miniaturization, lightness, and high functionality of electronic equipment have continued to develop. Semiconductor devices installed in electronic equipment are also required to be miniaturized, thinned, and high-density. Semiconductor chips are sometimes installed in a package that is close to their size. This type of package is also called a chip scale package (CSP). As one of the CSPs, there is a wafer level package (WLP). As for WLP, external electrodes are formed on the wafer before singulation by dicing, and the wafer is finally singulated by dicing. As WLP, there are fan-in (Fan-In) type and fan-out (Fan-Out) type. In the case of fan-out WLP (hereinafter referred to as "FO-WLP"), a semiconductor chip is covered with a sealing member in a manner that forms an area larger than the chip size to form a semiconductor chip sealed body, and a redistribution layer or an external electrode is formed on the circuit surface of the semiconductor chip and the surface area of the sealing member. For example, document 1 (International Publication No. 2010/058646) describes a method for manufacturing a semiconductor package, which is for a plurality of semiconductor chips singulated from a semiconductor wafer, retains their circuit formation surface, uses a molding member to surround them on all sides to form an extended wafer, and extends the redistribution pattern in the area outside the semiconductor chip. In the manufacturing method described in document 1, a wafer mounting tape for expansion is replaced before a plurality of singulated semiconductor chips are surrounded by a molded component, and the wafer mounting tape is extended to expand the distance between the plurality of semiconductor chips. In addition, document 2 (Japanese Patent Publication No. 2017-076748) describes an adhesive sheet having a second substrate layer, a first substrate layer, and a first adhesive layer in sequence, and the fracture elongation of the second substrate layer is 400% or more. The manufacturing method of a semiconductor device described in Document 2 comprises: a step of attaching a semiconductor wafer to the first adhesive layer of the adhesive sheet; a step of singulating the semiconductor wafer by dicing to form a plurality of semiconductor chips; and a step of stretching the adhesive sheet to expand the distance between the semiconductor chips. In the manufacturing method described in Document 1, since the adhesive tape used when singulating the semiconductor wafer is different from the adhesive tape used when expanding the distance between the semiconductor chips, it is necessary to replace the adhesive tape. In the method for manufacturing a semiconductor device described in Document 2, the adhesive sheet used when singulating a semiconductor wafer is the same as the adhesive sheet used when expanding the distance between semiconductor chips. However, since the adhesive sheet used in Document 2 is a sheet structure formed by laminating a second substrate layer, a first substrate layer, and a first adhesive layer, there is a demand for a method that can be cut and expanded with a simpler tape structure. In addition, in the process described in Document 2, in order to prevent the cutting blade from reaching the second substrate layer during cutting, it is necessary to carefully control the incision depth of the cutting blade. Therefore, there is also a demand for a simpler expansion method.

本發明目的在於提供一種與以往相比可簡化膠帶構成及製程的擴展方法，以及包含該擴展方法的半導體裝置之製造方法。 根據本發明一形態，係提供一種擴展方法，其係對具有第1晶圓面及前述第1晶圓面之相反側的第2晶圓面之晶圓的前述第2晶圓面黏貼具有第1黏著劑層及第1基材的第1黏著薄片，劃出深度50μm之切口的前述第1基材的拉伸伸度為300%以上，從前述第1晶圓面側劃出切口，將前述晶圓單片化成複數個晶片，進一步將前述第1黏著薄片之前述第1黏著劑層切斷，將前述第1黏著薄片拉伸，而擴大前述複數個晶片之間隔。 於本發明一形態之擴展方法中，較佳的是，前述切口係從前述第1晶圓面側以達到前述第1基材的深度而形成。 於本發明一形態之擴展方法中，較佳的是，前述第1基材的厚度為T1，劃入前述第1基材之前述切口的深度T2為0.2×T1以下。 於本發明一形態之擴展方法中，較佳的是，前述第1基材含有熱塑性彈性體。 於本發明一形態之擴展方法中，較佳的是，前述第1基材含有胺基甲酸酯系彈性體。 於本發明一形態之擴展方法中，較佳的是，前述第1黏著劑層含有能量線硬化性樹脂。 於本發明一形態之擴展方法中，較佳的是，將前述第1黏著薄片拉伸，而擴大前述複數個晶片之間隔後，對前述第1黏著劑層照射能量線而使前述第1黏著劑層硬化。 於本發明一形態之擴展方法中，較佳的是，前述第1黏著薄片為擴展薄片。 於本發明一形態之擴展方法中，較佳的是，前述晶圓為半導體晶圓。 於本發明一形態之擴展方法中，較佳的是，前述第1晶圓面具有電路。 根據本發明一形態，係提供一種半導體裝置之製造方法，其包含前述本發明一形態之擴展方法。 根據本發明一形態，可提供一種與以往相比可簡化膠帶構成及製程的擴展方法。根據本發明另一形態，可提供一種包含該擴展方法的半導體裝置之製造方法。The purpose of the present invention is to provide an expansion method that can simplify the tape structure and process compared with the past, and a manufacturing method of a semiconductor device including the expansion method. According to one form of the present invention, an expansion method is provided, which is to adhere a first adhesive sheet having a first adhesive layer and a first substrate to the second wafer surface of a wafer having a first wafer surface and a second wafer surface on the opposite side of the first wafer surface, and the tensile elongation of the first substrate with a cut of 50 μm in depth is greater than 300%, cut from the side of the first wafer surface, singulate the wafer into a plurality of chips, further cut the first adhesive layer of the first adhesive sheet, stretch the first adhesive sheet, and expand the interval between the plurality of chips. In the expansion method of one form of the present invention, it is preferred that the aforementioned cut is formed from the side of the aforementioned first wafer surface to a depth reaching the aforementioned first substrate. In the expansion method of one form of the present invention, it is preferred that the thickness of the aforementioned first substrate is T1, and the depth T2 of the aforementioned cut cut into the aforementioned first substrate is less than 0.2×T1. In the expansion method of one form of the present invention, it is preferred that the aforementioned first substrate contains a thermoplastic elastomer. In the expansion method of one form of the present invention, it is preferred that the aforementioned first substrate contains a urethane elastomer. In the expansion method of one form of the present invention, it is preferred that the aforementioned first adhesive layer contains an energy ray curable resin. In the expansion method of one form of the present invention, it is preferred that the first adhesive sheet is stretched to expand the interval between the plurality of chips, and then the first adhesive layer is irradiated with energy rays to harden the first adhesive layer. In the expansion method of one form of the present invention, it is preferred that the first adhesive sheet is an expansion sheet. In the expansion method of one form of the present invention, it is preferred that the wafer is a semiconductor wafer. In the expansion method of one form of the present invention, it is preferred that the first wafer surface has a circuit. According to one form of the present invention, a method for manufacturing a semiconductor device is provided, which includes the expansion method of one form of the present invention. According to one aspect of the present invention, a method for expanding the structure and manufacturing process of the adhesive tape can be simplified compared with the conventional method. According to another aspect of the present invention, a method for manufacturing a semiconductor device including the method for expanding the structure and manufacturing process of the adhesive tape can be provided.

[第1實施形態] 以下就本實施形態之擴展方法及包含該擴展方法的半導體裝置之製造方法加以說明。 圖1(圖1A及圖1B)、圖2、圖3(圖3A及圖3B)及圖4(圖4A及圖4B)為說明包含本實施形態之擴展方法的半導體裝置之製造方法的剖面示意圖。 本實施形態之擴展方法係具備下列步驟(P1)～(P3)之步驟。(P1)對具有第1晶圓面及第2晶圓面之晶圓的第2晶圓面黏貼第1黏著薄片之步驟。第1黏著薄片係具有第1黏著劑層與第1基材。 (P2)從第1晶圓面側劃出切口，將晶圓及第1黏著劑層切斷而單片化成複數個晶片之步驟。第1晶圓面為晶片之電路面，第2晶圓面則為晶片背面。切口係深達第1黏著劑層。若為既定深度之切口，則亦可達到第1基材。 (P3)將第1黏著薄片拉伸，而擴大複數個晶片之間隔之步驟。 圖1A為用來說明步驟(P1)的圖。圖1A中記載黏貼有第1黏著薄片10的晶圓W。 半導體晶圓W係具有作為第1晶圓面之電路面W1與作為第2晶圓面之背面W3。電路面W1上形成有電路W2。 半導體晶圓W例如可為矽晶圓或砷化鎵等化合物半導體晶圓。作為在半導體晶圓W之電路面W1形成電路W2之方法，可舉出通用方法，可列舉例如蝕刻法及剝離法等。 半導體晶圓W係保持於第1黏著薄片10上。於本實施形態中，係舉以電路面W1露出之狀態進行製程的形態為例加以說明，惟其他形態之實例可舉出例如以在電路面W1黏貼有保護薄片或保護膜等保護構件之狀態進行製程的形態。 第1黏著薄片10係具有第1黏著劑層12與第1基材11。 本實施形態之第1基材11，在劃出既定深度的切口並測定拉伸伸度時為300%以上。具體而言，劃出深度50μm的切口之第1基材11的拉伸伸度較佳為300%以上。該拉伸伸度若為300%以上，即使在切割步驟中對第1基材11劃出深度50μm的切口，亦無需換貼其他的黏著薄片而直接擴展第1黏著薄片10，可在不弄破第1黏著薄片下擴展半導體晶片CP彼此之間隔。劃出深度50μm的切口之第1基材11的拉伸伸度較佳為3000%以下。 例如，即使對厚度60μm的第1基材形成深度50μm的切口時，亦即對第1基材11的厚度60μm形成約83%(50μm/ 60μm≒0.83)之深度的切口時，只要第1基材11具有如上述之拉伸伸度，縱使經擴展，第1黏著薄片也不會斷裂。切口的深度，相對於第1基材11的厚度，較佳為85%以下，更佳為70%以下，再更佳為60%以下。 (拉伸伸度之測定方法) 將基材裁切成15mm×140mm之尺寸而得到試片。對此試片，依據JIS K6732：2006測定23℃下的拉伸伸度。具體而言，係對上述試片，以拉伸試驗機(島津製作所製，製品名「Autograph AG-IS 500N」)，夾頭間距離設定為100mm後，以200mm/min的速度進行拉伸試驗，並測定伸度(%)。 第1基材11係具有第1基材表面11a及與第1基材表面11a相反之一側的第1基材背面11b(茲參照圖2)。第1黏著劑層12係層合於第1基材表面11a。 與第1黏著薄片10有關的其他細節係於後述。 [背面研磨步驟] 於步驟(P1)中所準備之半導體晶圓W較佳為藉由經過背面研磨步驟而得到的晶圓。 於背面研磨步驟中，係將半導體晶圓W之電路面W1之相反側的面研磨至晶圓成為既定的厚度。背面W3較佳為將半導體晶圓W進行背面研磨而形成的面。以研磨半導體晶圓W後所露出的面作為背面W3。 研磨半導體晶圓W之方法不特別限定，可舉出例如使用研磨機等的週知方法。於研磨半導體晶圓W時，為了保護電路W2，較佳將所稱「背面研磨薄片」的黏著薄片黏貼於電路面W1。晶圓的背面研磨係將半導體晶圓W之電路面W1側，亦即背面研磨薄片側藉由吸盤台等予以固定，並藉由研磨機研磨未形成有電路的背面側。 研磨前之半導體晶圓W的厚度不特別限定，通常為500μm以上1000μm以下。 研磨後之半導體晶圓W的厚度不特別限定，通常為20μm以上500μm以下。 [第1黏著薄片之黏貼步驟] 步驟(P1)中所準備之半導體晶圓W較佳為經過背面研磨步驟，並進一步經過對背面W3黏貼第1黏著薄片10之黏貼步驟而得到的晶圓。有將此黏貼步驟稱為第1黏著薄片之黏貼步驟。 諸如後述，於步驟(P2)中，半導體晶圓W係藉由切割單片化成複數個半導體晶片CP，且於步驟(P3)中，藉由擴展而擴大複數個半導體晶片CP彼此之間隔。於本實施形態中，為了在切割半導體晶圓W時保持半導體晶圓W，及為了在擴展黏著薄片時保持半導體晶片CP，而對背面W3黏貼第1黏著薄片10。 [切割步驟] 圖1B為用來說明步驟(P2)的圖。有將步驟(P2)稱為切割步驟。圖1B中示出保持於第1黏著薄片10的複數個半導體晶片CP。切割係使用切割鋸等的切斷手段。 背面W3黏貼有第1黏著薄片10之狀態的半導體晶圓W係藉由切割而單片化，而形成複數個半導體晶片CP。作為第1晶圓面之電路面W1係相當於晶片之電路面。作為第2晶圓面之背面W3則相當於晶片背面。 於本實施形態中，從電路面W1側劃出切口，將半導體晶圓W切斷，並進一步將第1黏著劑層12切斷。切割時的切斷深度，只要是可將半導體晶圓W及第1黏著劑層12單片化的深度則不特別限定。於本實施形態中，基於更確實地切斷半導體晶圓W及第1黏著劑層12之觀點，係如圖1B所示地舉切口深入至第1基材11之形態為例加以說明。此外，本發明非限定於此種形態。例如，於其他實施形態中，亦較佳為藉由切割，使切口未達到第1基材11且將第1黏著劑層12切斷。 圖2示出將在切割步驟中將半導體晶圓W及第1黏著劑層12切斷之部位一部分放大而表示的剖面示意圖。 於本實施形態中，係對第1基材11劃出既定深度的切口。如圖2所示，在切割步驟中劃出之切口的深度當中，係將距離第1基材11之第1基材表面11a側之切口的深度設為T2。將第1基材11的厚度設為T1。此時，厚度T1與切口深度T2較佳滿足以下(數1)之關係。T1及T2的單位為μm(微米)。 T2≦0.2×T1・・・(數1) 於本實施形態中，藉由切割步驟，可獲得在半導體晶片CP的背面W3側，在複數個半導體晶片CP與第1基材11之間介隔著經單片化之第1黏著劑層12的層合構造。 [擴展步驟] 圖3A為用來說明步驟(P3)的圖。有將步驟(P3)稱為擴展步驟。圖3A中示出在切割步驟後，將第1黏著薄片10拉伸而擴大複數個半導體晶片CP之間隔之狀態。 在擴展複數個半導體晶片CP之間隔時，較佳在藉由所稱擴展薄片之黏著薄片保持複數個半導體晶片CP的狀態下將擴展薄片拉伸。於本實施形態中，第1黏著薄片10較佳為擴展薄片。 於本實施形態之擴展步驟中，係直接使用切割步驟中所使用的第1黏著薄片10。於本實施形態之切割步驟中，係對第1基材11劃出既定深度的切口，而就第1基材，由於劃出深度50μm之切口的該第1基材11的拉伸伸度為300%以上，即使實施擴展步驟，第1基材11也不會斷裂。 於擴展步驟中拉伸第1黏著薄片10之方法不特別限定。拉伸第1黏著薄片10之方法可舉出例如緊壓環狀或者圓形的擴展器而拉伸第1黏著薄片10的方法及使用夾持構件等抓持第1黏著薄片10的外周部而予以拉伸的方法等。於本實施形態中，由於複數個半導體晶片CP之間隔D1係相依於半導體晶片CP的尺寸，而不特別限制。尤其是，黏貼於黏著薄片的單面之複數個半導體晶片CP中相鄰之半導體晶片CP的相互之間隔D1較佳為200μm以上。此外，該半導體晶片CP的相互之間隔的上限不特別限制。該半導體晶片CP的相互之間隔的上限可為例如6000μm。 [能量線照射步驟] 將第1黏著薄片10拉伸，而擴大複數個半導體晶片CP之間隔後，較佳實施對第1黏著劑層12照射能量線而使第1黏著劑層12硬化之步驟。有將此步驟稱為「能量線照射步驟」。 茲依據第1黏著劑層12所含有之能量線硬化性樹脂的種類，來適宜選擇照射至第1黏著劑層12的能量線。當第1黏著劑層12含有紫外線硬化性樹脂而具有紫外線硬化性時，於能量線照射步驟中，係對第1黏著薄片10照射紫外線。藉由在擴展步驟後使第1黏著劑層12硬化，可提升延伸後之第1黏著薄片10的形狀保持性。其結果，即容易維持黏貼於第1黏著劑層12之複數個半導體晶片CP的整齊排列性。 實施能量線照射步驟的時間點可於擴展步驟後且後述之第1黏著薄片之剝離步驟前。基於容易維持複數個半導體晶片CP的整齊排列性之觀點，能量線照射步驟較佳於擴展步驟後且第1轉印步驟前實施。 [第1轉印步驟] 於本實施形態中，在擴展步驟後，亦可實施將黏貼於第1黏著薄片10的複數個半導體晶片CP轉印於其他黏著薄片(例如第2黏著薄片)之步驟(以下有稱為「第1轉印步驟」)。 圖3B中示出說明將黏貼於第1黏著薄片10的複數個半導體晶片CP轉印於第2黏著薄片20之步驟(有稱為「第1轉印步驟」)的圖。 第2黏著薄片20，只要可保持複數個半導體晶片CP則不特別限定。第2黏著薄片20係具有第2基材21與第2黏著劑層22。欲密封第2黏著薄片20上的複數個半導體晶片CP時，作為第2黏著薄片20，較佳使用密封步驟用之黏著薄片，更佳使用具耐熱性之黏著薄片。再者，當第2黏著薄片20使用具耐熱性之黏著薄片時，第2基材21及第2黏著劑層22較佳分別以具有可承受密封步驟中所施加之溫度的耐熱性之材料所形成。 於本實施形態中實施轉印步驟時，係以例如在擴展步驟後，對複數個半導體晶片CP的電路面W1黏貼第2黏著薄片20，其後將第1黏著薄片10由背面W3剝離為佳。 [第1黏著薄片之剝離步驟] 圖4A為說明將第1黏著薄片10由背面W3剝離之步驟的圖，有將此步驟稱為第1黏著薄片之剝離步驟。 第1黏著薄片之剝離步驟後，亦較佳維持在擴展步驟中所擴展之複數個半導體晶片CP間之間隔D1。 將第1黏著薄片10由背面W3剝離時，基於抑制黏膠殘留於背面W3之一觀點，第1黏著薄片10之第1黏著劑層12較佳含有能量線硬化性樹脂。當第1黏著劑層12含有能量線硬化性樹脂時，係對第1黏著薄片10照射能量線，而使能量線硬化性樹脂硬化。若使能量線硬化性樹脂硬化，可提高第1黏著劑層12中之黏著成分的凝聚力，而使第1黏著劑層12與半導體晶片CP的背面W3之間的黏著力降低或消失。能量線可舉出例如紫外線(UV)或電子束(EB)等，較佳為紫外線。從而，能量線硬化性樹脂較佳為紫外線硬化型樹脂。第1基材11較佳具有能量線之穿透性。 第2黏著薄片20亦可與複數個半導體晶片CP共同黏貼於環框上。此時，係於第2黏著薄片20之第2黏著劑層22上載置環框，將其輕輕按壓而固定。其後，將在環框的環狀內側露出的第2黏著劑層22緊壓於半導體晶片CP之電路面W1，而將複數個半導體晶片CP固定於第2黏著薄片20。 [密封步驟] 圖4B中示出說明使用密封構件300來密封複數個半導體晶片CP之步驟(以下有稱為「密封步驟」)的圖。 於本實施形態中，密封步驟係在將複數個半導體晶片CP轉印於第2黏著薄片20後實施。 於密封步驟中，係藉由在電路面W1被第2黏著薄片20保護的狀態下將複數個半導體晶片CP藉由密封構件300被覆而形成密封體3。在複數個半導體晶片CP之間亦填充有密封構件300。由於係藉由第2黏著薄片20被覆電路面W1及電路W2，而能夠防止電路面W1被密封構件300被覆。 藉由密封步驟，可獲得各以既定距離隔開的複數個半導體晶片CP嵌入至密封構件300中的密封體3。於密封步驟中，複數個半導體晶片CP較佳在維持實施擴展步驟後之間隔D1的狀態下由密封構件300被覆。 於密封步驟後，將第2黏著薄片20剝離。若剝離第2黏著薄片20，則與半導體晶片CP之電路面W1及密封體3之第2黏著薄片20接觸的面3A會露出。 於前述擴展步驟後，藉由重複任意次數之轉印步驟及擴展步驟，可使半導體晶片CP間的距離成為期望的距離，而能夠使密封半導體晶片CP時之電路面的位向成為期望的位向。 [其他步驟] 由密封體3剝離黏著薄片後，對此密封體3依序進行：再配線層形成步驟，係形成與半導體晶片CP電性連接之再配線層；及連接步驟，係將再配線層與外部端子電極電性連接。藉由再配線層形成步驟及與外部端子電極的連接步驟，而將半導體晶片CP之電路與外部端子電極電性連接。 以半導體晶片CP為單元將連接有外部端子電極的密封體3單片化。使密封體3單片化之方法不特別限定。藉由將密封體3單片化，即製成半導體晶片CP單元的半導體封裝體。連接有扇出至半導體晶片CP之區域外的外部電極之半導體封裝體係以扇出型晶圓級封裝體(FO-WLP)製造。 (第1黏著薄片) 第1黏著薄片10係具有第1基材11與第1黏著劑層12。第1黏著劑層12係層合於第1基材11。 ・第1基材 第1基材11，只要在擴展步驟等期望的步驟(例如步驟(P1)～(P3))中可適當地發揮其機能，則其構成材料不特別限定。 第1基材11係具有第1基材表面11a及第1基材背面11b。第1基材背面11b係與第1基材表面11a之相反之一側的面。 於第1黏著薄片10中，較佳在第1基材表面11a及第1基材背面11b的其中一面設有第1黏著劑層12，另一面則較佳為未設有黏著劑層。於本實施形態中，係於第1基材表面11a設有第1黏著劑層12。 第1基材11之材料，基於容易大幅延伸之觀點，較佳為熱塑性彈性體、或橡膠系材料，更佳為熱塑性彈性體。 又，第1基材11之材料，基於容易大幅延伸之觀點，較佳使用玻璃轉移溫度(Tg)較低的樹脂。此種樹脂之玻璃轉移溫度(Tg)較佳為90℃以下，更佳為80℃以下，再更佳為70℃以下。 熱塑性彈性體可舉出胺基甲酸酯系彈性體、烯烴系彈性體、氯乙烯系彈性體、聚酯系彈性體、苯乙烯系彈性體、丙烯酸系彈性體及醯胺系彈性體等。熱塑性彈性體可單獨使用1種或組合使用2種以上。熱塑性彈性體，基於容易大幅延伸之觀點，較佳使用胺基甲酸酯系彈性體。 一般而言，胺基甲酸酯系彈性體係使長鏈多元醇、鏈延長劑及二異氰酸酯反應而得。胺基甲酸酯系彈性體係由具有衍生至長鏈多元醇之構成單元的軟鏈段，與具有由鏈延長劑與二異氰酸酯之反應而得之聚胺基甲酸酯結構的硬鏈段所構成。 若將胺基甲酸酯系彈性體根據長鏈多元醇的種類來分類，則可分為聚酯系聚胺基甲酸酯彈性體、聚醚系聚胺基甲酸酯彈性體及聚碳酸酯系聚胺基甲酸酯彈性體等。胺基甲酸酯系彈性體可單獨使用1種或組合使用2種以上。於本實施形態中，胺基甲酸酯系彈性體，基於容易大幅延伸之觀點，較佳為聚醚系聚胺基甲酸酯彈性體。 長鏈多元醇之實例可舉出內酯系聚酯多元醇及己二酸酯系聚酯多元醇等聚酯多元醇；聚丙烯(乙烯)多元醇及聚四亞甲基醚二醇等聚醚多元醇；聚碳酸酯多元醇等。於本實施形態中，長鏈多元醇，基於容易大幅延伸之觀點，較佳為己二酸酯系聚酯多元醇。 二異氰酸酯之實例可舉出2,4-甲苯二異氰酸酯、2,6-甲苯二異氰酸酯、4,4’-二苯基甲烷二異氰酸酯及六亞甲基二異氰酸酯等。於本實施形態中，二異氰酸酯，基於容易大幅延伸之觀點，較佳為六亞甲基二異氰酸酯。 鏈延長劑可舉出低分子多元醇(例如1,4-丁二醇及1,6-己二醇等)及芳香族二胺等。此等當中，基於容易大幅延伸之觀點，較佳使用1,6-己二醇。 烯烴系彈性體可舉出包含選自由乙烯・α-烯烴共聚物、丙烯・α-烯烴共聚物、丁烯・α-烯烴共聚物、乙烯・丙烯・α-烯烴共聚物、乙烯・丁烯・α-烯烴共聚物、丙烯・丁烯-α烯烴共聚物、乙烯・丙烯・丁烯-α・烯烴共聚物、苯乙烯・異戊二烯共聚物及苯乙烯・乙烯・丁烯共聚物所成群組的至少1種樹脂之彈性體。烯烴系彈性體可單獨使用1種或組合使用2種以上。 烯烴系彈性體的密度不特別限定。例如，烯烴系彈性體的密度較佳為0.860g/cm3 以上且未達0.905g/cm3 ，更佳為0.862g/cm3 以上且未達0.900g/cm3 ，特佳為0.864g/cm3 以上且未達0.895g/cm3 。透過烯烴系彈性體的密度滿足上述範圍，基材其將作為被黏物之半導體晶圓等半導體裝置黏貼於黏著薄片時的凹凸順應性等優異。 就烯烴系彈性體，用以形成此彈性體的全部單體當中，由烯烴系化合物所構成之單體的質量比率(於本說明書中亦稱為「烯烴含有率」)較佳為50質量%以上100質量%以下。 烯烴含有率過低時，不易顯現作為包含烯烴所衍生之結構單元的彈性體之性質，使得基材不易顯示柔軟性及橡膠彈性。 基於穩定獲得柔軟性及橡膠彈性之觀點，烯烴含有率較佳為50質量%以上，更佳為60質量%以上。 苯乙烯系彈性體可舉出苯乙烯-共軛二烯共聚物及苯乙烯-烯烴共聚物等。苯乙烯-共軛二烯共聚物之具體例可舉出苯乙烯-丁二烯共聚物、苯乙烯-丁二烯-苯乙烯共聚物(SBS)、苯乙烯-丁二烯-丁烯-苯乙烯共聚物、苯乙烯-異戊二烯共聚物、苯乙烯-異戊二烯-苯乙烯共聚物(SIS)、苯乙烯-乙烯-異戊二烯-苯乙烯共聚物等未氫化苯乙烯-共軛二烯共聚物、苯乙烯-乙烯/丙烯-苯乙烯共聚物(SEPS，苯乙烯-異戊二烯-苯乙烯共聚物之氫化物)及苯乙烯-乙烯-丁烯-苯乙烯共聚物(SEBS，苯乙烯-丁二烯共聚物之氫化物)等的氫化苯乙烯-共軛二烯共聚物等。又，工業上，作為苯乙烯系彈性體，可舉出Tufprene(旭化成股份有限公司製)、Kraton(Kraton Polymer Japan股份有限公司製)、住友TPE-SB(住友化學股份有限公司製)、Epofriend(DAICEL股份有限公司製)、RABALON(Mitsubishi Chemical股份有限公司製)、Septon(Kuraray股份有限公司製)及Tuftec(旭化成股份有限公司製)等商品名。苯乙烯系彈性體可為氫化物或未氫化物。 橡膠系材料可舉出例如天然橡膠、合成異戊二烯橡膠(IR)、丁二烯橡膠(BR)、苯乙烯-丁二烯橡膠(SBR)、氯丁二烯橡膠(CR)、丙烯腈-丁二烯共聚合橡膠(NBR)、丁基橡膠(IIR)、鹵化丁基橡膠、丙烯酸橡膠、胺基甲酸酯橡膠及多硫化橡膠等。橡膠系材料可單獨使用此等的1種或組合使用2種以上。 第1基材11亦可為由如上述之材料(例如熱塑性彈性體或橡膠系材料)所構成的薄膜以多層層合而成的層合薄膜。又，第1基材11也可為由如上述之材料(例如熱塑性彈性體或橡膠系材料)所構成的薄膜與其他薄膜層合而成的層合薄膜。 第1基材11亦可在以上述樹脂系材料為主材料的薄膜內含有添加劑。添加劑可舉出例如顏料、染料、阻燃劑、塑化劑、抗靜電劑、滑劑及填料等。顏料可舉出例如二氧化鈦及碳黑等。又，填料可例示如三聚氰胺樹脂之有機系材料、如發煙二氧化矽之無機系材料及如鎳粒子之金屬系材料。可含於薄膜內之添加劑的含量不特別限定，較佳僅限於可使第1基材11發揮期望之機能的範圍。 第1基材11係於第1基材11的單面或兩面實施有用來提升與層合於第1基材11的表面之第1黏著劑層12的密合性之處理。 當第1黏著劑層12含有能量線硬化性黏著劑時，第1基材11較佳具有對能量線之穿透性。能量線使用紫外線時，第1基材11較佳對紫外線具有穿透性。能量線使用電子束時，第1基材11較佳具有電子束之穿透性。 第1基材11的厚度，只要第1黏著薄片10可於期望的步驟中適當地發揮其機能則不予限定。第1基材11的厚度較佳為60μm以上，更佳為80μm以上。又，第1基材11的厚度較佳為250μm以下，更佳為200μm以下。 又，在第1基材11之第1基材表面11a或第1基材背面11b的面內方向以2cm間隔測定多處的厚度時之第1基材11的厚度的標準差較佳為2μm以下，更佳為1.5μm以下，再更佳為1μm以下。透過該標準差為2μm以下，第1黏著薄片10即具有高精確度之厚度，而能夠均勻地延伸第1黏著薄片10。 較佳的是，於23℃下第1基材11之MD方向及CD方向的拉伸彈性率分別為10MPa以上350MPa以下，於23℃下第1基材11之MD方向及CD方向的100%應力分別為3MPa以上20MPa以下。 透過拉伸彈性率及100%應力為上述範圍，可大幅延伸第1黏著薄片10。 第1基材11的100%應力係如下列方式所獲得的值。由第1基材11切出150mm(長度方向)×15mm(寬度方向)之大小的試片。以夾具間的長度為100mm的方式用夾具夾住切出之試片的長度方向的兩端。用夾具夾住試片後，以速度200mm/min朝長度方向拉伸，讀取夾具間的長度成為200mm時之拉伸力的測定值。第1基材11的100%應力係由讀取之拉伸力的測定值除以基材之剖面積而得到的值。第1基材11之剖面積係以寬度方向長度15mm×第1基材11(試片)的厚度算出。該切出係以基材製造時之流動方向(MD方向)或與MD方向正交之方向(CD方向)和試片的長度方向一致的方式來進行。此外，於此拉伸試驗中，試片的厚度不特別限制，亦可與作為試驗對象之基材的厚度相同。 於23℃下第1基材11之MD方向及CD方向的斷裂延伸度分別較佳為100%以上。 透過第1基材11之MD方向及CD方向的斷裂延伸度分別為100%以上，可不發生斷裂地大幅延伸第1黏著薄片10。 基材的拉伸彈性率(MPa)及基材的斷裂延伸度(%)可如下測定。將基材裁切成15mm×140mm而得到試片。對該試片，依據JIS K7161：2014及JIS K7127：1999測定23℃下的斷裂延伸度及拉伸彈性率。具體而言，係對上述試片，以拉伸試驗機(島津製作所股份有限公司製，製品名「Autograph AG-IS 500N」)，夾頭間距離設定為100mm後，以200mm/min的速度進行拉伸試驗，並測定斷裂延伸度(%)及拉伸彈性率(MPa)。此外，測定係於基材製造時之流動方向(MD)及與其呈垂直的方向(CD)此兩者進行。 ・第1黏著劑層 第1黏著劑層12，只要在擴展步驟等期望之步驟中可適當地發揮其機能則其構成材料不特別限定。第1黏著劑層12所含之黏著劑可舉出例如橡膠系黏著劑、丙烯酸系黏著劑、聚矽氧系黏著劑、聚酯系黏著劑及胺基甲酸酯系黏著劑。 ・能量線硬化性樹脂(ax1) 第1黏著劑層12較佳含有能量線硬化性樹脂(ax1)。能量線硬化性樹脂(ax1)係於分子內具有能量線硬化性雙鍵。 含有能量線硬化性樹脂之黏著劑層，可藉由照射能量線硬化而使黏著力降低。欲分離被黏物與黏著薄片時，藉由將能量線照射至黏著劑層，可容易地分離。 能量線硬化性樹脂(ax1)較佳為(甲基)丙烯酸系樹脂。 能量線硬化性樹脂(ax1)較佳為紫外線硬化性樹脂，更佳為紫外線硬化性(甲基)丙烯酸系樹脂。 能量線硬化性樹脂(ax1)係一受到能量線的照射便會聚合硬化的樹脂。能量線可舉出例如紫外線及電子束等。 能量線硬化性樹脂(ax1)之實例可舉出具有能量線聚合性基之低分子量化合物(單官能單體、多官能單體、單官能寡聚物及多官能寡聚物)。能量線硬化性樹脂(ax1)，具體而言可使用三羥甲基丙烷三丙烯酸酯、四羥甲基甲烷四丙烯酸酯、季戊四醇三丙烯酸酯、二季戊四醇單羥基五丙烯酸酯、二季戊四醇六丙烯酸酯、1,4-丁二醇二丙烯酸酯及1,6-己二醇二丙烯酸酯等丙烯酸酯、二環戊二烯二甲氧基二丙烯酸酯及丙烯酸異莰酯等含環狀脂肪族骨架之丙烯酸酯，以及聚乙二醇二丙烯酸酯、寡酯丙烯酸酯、胺基甲酸酯丙烯酸酯寡聚物、環氧改質丙烯酸酯、聚醚丙烯酸酯及伊康酸寡聚物等丙烯酸酯系化合物。能量線硬化性樹脂(a1)可單獨使用1種或組合使用2種以上。 能量線硬化性樹脂(ax1)的分子量通常為100以上30000以下，較佳為300以上10000以下左右。 ・(甲基)丙烯酸系共聚物(b1) 第1黏著劑層12較佳進一步包含(甲基)丙烯酸系共聚物(b1)。(甲基)丙烯酸系共聚物係有別於前述之能量線硬化性樹脂(ax1)。 (甲基)丙烯酸系共聚物(b1)較佳具有能量線硬化性碳-碳雙鍵。亦即，於本實施形態中，第1黏著劑層12較佳含有能量線硬化性樹脂(ax1)與能量線硬化性(甲基)丙烯酸系共聚物(b1)。 第1黏著劑層12，相對於(甲基)丙烯酸系共聚物(b1) 100質量份，能量線硬化性樹脂(ax1)較佳以10質量份以上的比例含有，更佳以20質量份以上的比例含有，再更佳以25質量份以上的比例含有。 第1黏著劑層12，相對於(甲基)丙烯酸系共聚物(b1) 100質量份，能量線硬化性樹脂(ax1)較佳以80質量份以下的比例含有，更佳以70質量份以下的比例含有，再更佳以60質量份以下的比例含有。 (甲基)丙烯酸系共聚物(b1)的重量平均分子量(Mw)較佳為1萬以上，更佳為15萬以上，再更佳為20萬以上。 又，(甲基)丙烯酸系共聚物(b1)的重量平均分子量(Mw)較佳為150萬以下，更佳為100萬以下。 此外，本說明書中之重量平均分子量(Mw)係根據凝膠滲透層析法(GPC法)所測得的標準聚苯乙烯換算值。 (甲基)丙烯酸系共聚物(b1)較佳為側鏈導入有具能量線硬化性之官能基(能量線硬化性基)的(甲基)丙烯酸酯聚合物(b2)(以下有稱為「能量線硬化性聚合物(b2)」)。 ・能量線硬化性聚合物(b2) 能量線硬化性聚合物(b2)較佳為使具有含官能基單體單元之丙烯酸系共聚物(b21)，與具有鍵結於該官能基之官能基的含不飽和基化合物(b22)反應而得的共聚物。 於本說明書中，(甲基)丙烯酸酯係指丙烯酸酯及甲基丙烯酸酯此兩者。其他類似用語亦同。 丙烯酸系共聚物(b21)較佳包含衍生自含官能基單體的構成單元，與衍生自(甲基)丙烯酸酯單體或(甲基)丙烯酸酯單體之衍生物的構成單元。 作為丙烯酸系共聚物(b21)之構成單元的含官能基單體較佳為分子內具有聚合性雙鍵與官能基的單體。官能基較佳為選自由羥基、羧基、胺基、經取代胺基及環氧基等所成群組的至少任一種官能基。 含羥基單體可舉出例如(甲基)丙烯酸2-羥基乙酯、(甲基)丙烯酸2-羥基丙酯、(甲基)丙烯酸3-羥基丙酯、(甲基)丙烯酸2-羥基丁酯、(甲基)丙烯酸3-羥基丁酯及(甲基)丙烯酸4-羥基丁酯等。含羥基單體可單獨使用1種或組合使用2種以上。 含羧基單體可舉出例如丙烯酸、甲基丙烯酸、巴豆酸、馬來酸、伊康酸及檸康酸等乙烯性不飽和羧酸。含羧基單體可單獨使用1種或組合使用2種以上。 含胺基單體或經取代含胺基單體可舉出例如(甲基)丙烯酸胺基乙酯及(甲基)丙烯酸正丁基胺基乙酯等。含胺基單體或經取代含胺基單體可單獨使用1種或組合使用2種以上。 構成丙烯酸系共聚物(b21)之(甲基)丙烯酸酯單體，除烷基之碳數為1以上20以下的(甲基)丙烯酸烷基酯外，較佳使用例如分子內具有脂環式結構之單體(含脂環式結構單體)。 (甲基)丙烯酸烷基酯較佳為烷基之碳數為1以上18以下的(甲基)丙烯酸烷基酯。(甲基)丙烯酸烷基酯更佳為例如(甲基)丙烯酸甲酯、(甲基)丙烯酸乙酯、(甲基)丙烯酸丙酯、(甲基)丙烯酸正丁酯及(甲基)丙烯酸2-乙基己酯等。(甲基)丙烯酸烷基酯可單獨使用1種或組合使用2種以上。 含脂環式結構單體較佳使用例如(甲基)丙烯酸環己酯、(甲基)丙烯酸二環戊酯、(甲基)丙烯酸金剛烷酯、(甲基)丙烯酸異莰酯、(甲基)丙烯酸二環戊烯酯及(甲基)丙烯酸二環戊烯基氧基乙酯等。含脂環式結構單體可單獨使用1種或組合使用2種以上。 丙烯酸系共聚物(b21)，衍生自上述含官能基單體的構成單元較佳以1質量%以上的比例含有，更佳以5質量%以上的比例含有，再更佳以10質量%以上的比例含有。 又，丙烯酸系共聚物(b21)，衍生自上述含官能基單體的構成單元較佳以35質量%以下的比例含有，更佳以30質量%以下的比例含有，再更佳以25質量%以下的比例含有。 再者，丙烯酸系共聚物(b21)，衍生自(甲基)丙烯酸酯單體或其衍生物的構成單元較佳以50質量%以上的比例含有，更佳以60質量%以上的比例含有，再更佳以70質量%以上的比例含有。 此外，丙烯酸系共聚物(b21)，衍生自(甲基)丙烯酸酯單體或其衍生物的構成單元較佳以99質量%以下的比例含有，更佳以95質量%以下的比例含有，再更佳以90質量%以下的比例含有。 丙烯酸系共聚物(b21)可藉由將如上述之含官能基單體與(甲基)丙烯酸酯單體或其衍生物以常用方法共聚合而得。 丙烯酸系共聚物(b21)，除上述單體外，亦可含有選自由二甲基丙烯醯胺、甲酸乙烯酯、乙酸乙烯酯及苯乙烯等所成群組的至少任一種構成單元。 藉由使具有上述含官能基單體單元之丙烯酸系共聚物(b21)，與具有鍵結於該官能基之官能基的含不飽和基化合物(b22)反應，可獲得能量線硬化性聚合物(b2)。 含不飽和基化合物(b22)所具有之官能基可依據丙烯酸系共聚物(b21)所具有之含官能基單體單元之官能基的種類適宜選擇。例如，當丙烯酸系共聚物(b21)所具有之官能基為羥基、胺基或經取代胺基時，含不飽和基化合物(b22)所具有之官能基較佳為異氰酸酯基或環氧基；當丙烯酸系共聚物(b21)所具有之官能基為環氧基時，含不飽和基化合物(b22)所具有之官能基較佳為胺基、羧基或氮丙啶基。 含不飽和基化合物(b22)係於1分子中至少含有1個能量線聚合性碳-碳雙鍵，較佳含有1個以上6個以下，更佳含有1個以上4個以下。 含不飽和基化合物(b22)可舉出例如2-甲基丙烯醯氧乙基異氰酸酯(2-異氰酸基乙基甲基丙烯酸酯)、間-異丙烯基-α,α-二甲基苯甲基異氰酸酯、甲基丙烯醯基異氰酸酯、烯丙基異氰酸酯、1,1-(雙丙烯醯氧甲基)乙基異氰酸酯；根據二異氰酸酯化合物或聚異氰酸酯化合物與(甲基)丙烯酸羥基乙酯之反應而得之丙烯醯基單異氰酸酯化合物；根據二異氰酸酯化合物或聚異氰酸酯化合物、多元醇化合物與(甲基)丙烯酸羥基乙酯之反應而得之丙烯醯基單異氰酸酯化合物；(甲基)丙烯酸環氧丙酯；(甲基)丙烯酸、2-(1-氮丙啶基)乙基(甲基)丙烯酸酯、2-乙烯基-2-噁唑啉、2-異丙烯基-2-噁唑啉等。 含不飽和基化合物(b22)，相對於丙烯酸系共聚物(b21)之含官能基單體的莫耳數，較佳以50莫耳%以上的比例(加成率)使用，更佳以60莫耳%以上的比例使用，再更佳以70莫耳%以上的比例使用。 又，含不飽和基化合物(b22)，相對於丙烯酸系共聚物(b21)之含官能基單體的莫耳數，較佳以95莫耳%以下的比例使用，更佳以93莫耳%以下的比例使用，再更佳以90莫耳%以下的比例使用。 在丙烯酸系共聚物(b21)與含不飽和基化合物(b22)的反應中，可依據丙烯酸系共聚物(b21)所具有之官能基與含不飽和基化合物(b22)所具有之官能基的組合而適宜選擇反應的溫度、壓力、溶媒、時間、有無觸媒及觸媒的種類。藉此，丙烯酸系共聚物(b21)所具有之官能基與含不飽和基化合物(b22)所具有之官能基便會反應，使不飽和基導入至丙烯酸系共聚物(b21)的側鏈，而獲得能量線硬化性聚合物(b2)。 能量線硬化性聚合物(b2)的重量平均分子量(Mw)較佳為1萬以上，更佳為15萬以上，再更佳為20萬以上。 又，能量線硬化性聚合物(b2)的重量平均分子量(Mw)較佳為150萬以下，更佳為100萬以下。 ・光聚合起始劑(C) 當第1黏著劑層12含有紫外線硬化性化合物(例如紫外線硬化性樹脂)時，第1黏著劑層12較佳含有光聚合起始劑(C)。 透過第1黏著劑層12含有光聚合起始劑(C)，可減少聚合硬化時間及光線照射量。 光聚合起始劑(C)之具體例可舉出例如安息香化合物、苯乙酮化合物、醯基膦氧化物化合物、二茂鈦化合物、噻噸酮化合物及過氧化物化合物。再者，光聚合起始劑(C)可舉出例如胺或醌等光敏化劑等。 更具體的光聚合起始劑(C)可舉出例如1-羥基環己基苯基酮、2-羥基-2-甲基-1-苯基-丙烷-1-酮、安息香、安息香甲醚、安息香***、安息香異丙醚、苯甲基苯基硫醚、四甲基秋蘭姆單硫醚、偶氮雙異丁腈、聯苄、聯乙醯、8-氯蒽醌及雙(2,4,6-三甲基苯甲醯基)苯基膦氧化物。光聚合起始劑(C)可單獨使用1種或併用2種以上。 光聚合起始劑(C)的摻混量，相對於黏著性樹脂100質量份，較佳為0.01質量份以上10質量份以下，更佳為0.03質量份以上5質量份以下，再更佳為0.05質量份以上5質量份以下。 光聚合起始劑(C)，在黏著劑層中摻混能量線硬化性樹脂(ax1)及(甲基)丙烯酸系共聚物(b1)時，相對於能量線硬化性樹脂(ax1)及(甲基)丙烯酸系共聚物(b1)的合計量100質量份較佳以0.1質量份以上的量使用，更佳以0.5質量份以上的量使用。 又，光聚合起始劑(C)，在黏著劑層中摻混能量線硬化性樹脂(ax1)及(甲基)丙烯酸系共聚物(b1)時，相對於能量線硬化性樹脂(ax1)及(甲基)丙烯酸系共聚物(b1)的合計量100質量份較佳以10質量份以下的量使用，更佳以6質量份以下的量使用。 第1黏著劑層12，除上述成分以外，亦可適當摻混其他成分。其他成分可舉出例如交聯劑(E)等。 ・交聯劑(E) 交聯劑(E)可使用具有與(甲基)丙烯酸系共聚物(b1)等所具有之官能基的反應性之多官能性化合物。第1黏著薄片10中之多官能性化合物之實例可舉出異氰酸酯化合物、環氧化合物、胺化合物、三聚氰胺化合物、氮丙啶化合物、肼化合物、醛化合物、噁唑啉化合物、金屬醇鹽化合物、金屬螯合化合物、金屬鹽、銨鹽及反應性酚樹脂等。 交聯劑(E)的摻混量，相對於(甲基)丙烯酸系共聚物(b1)100質量份，較佳為0.01質量份以上，更佳為0.03質量份以上，再更佳為0.04質量份以上。 又，交聯劑(E)的摻混量，相對於(甲基)丙烯酸系共聚物(b1)100質量份，較佳為8質量份以下，更佳為5質量份以下，再更佳為3.5質量份以下。 第1黏著劑層12的厚度不特別限定。第1黏著劑層12的厚度例如較佳為10μm以上，更佳為20μm以上。又，第1黏著劑層12的厚度較佳為150μm以下，更佳為100μm以下。 第1黏著薄片10的恢復率較佳為70%以上，更佳為80%以上，再更佳為85%以上。第1黏著薄片10的恢復率較佳為100%以下。透過恢復率為上述範圍，可大幅延伸黏著薄片。 恢復率係在將黏著薄片切出成150mm(長度方向)×15mm(寬度方向)的試片中，以夾具間的長度為100mm的方式用夾具夾住長度方向的兩端，其後，以200mm/min的速度拉伸至夾具間的長度成為200mm，在夾具間的長度擴展成200mm的狀態下保持1分鐘，其後，以200mm/min的速度沿長度方向使夾具間的長度回復至100mm，在夾具間的長度回復至100mm的狀態下保持1分鐘，其後，以60mm/min的速度沿長度方向拉伸，測定拉伸力之測定值顯示0.1N/15mm時之夾具間的長度，在將由該長度減去初始夾具間的長度100mm的長度設為L2(mm)，由前述經擴展之狀態下之夾具間的長度200mm減去初始夾具間的長度100mm的長度設為L1(mm)時，以下述算式(數2)算出。 恢復率(%)={1-(L2÷L1)}×100 ・・・ (數2) 當恢復率為上述範圍時，意指黏著薄片在經大幅延伸後亦容易復原。一般而言，若將具有屈服點的薄片延伸至屈服點以上，則薄片容易發生塑性變形，在發生塑性變形的部分，即經極度延伸的部分會成為不均勻分佈之狀態。若將此種狀態之薄片進一步延伸，則會由上述經極度延伸的部分發生斷裂；或者即使未發生斷裂，擴展亦會不均勻。又，在分別將應變繪成x軸、伸長率繪成y軸的應力-應變線圖中，無法獲得斜率dx/dy變為正值至0或負值的應力值，縱為未顯示明確的屈服點之薄片，隨著拉伸量變大，薄片仍會發生塑性變形，而同樣地發生斷裂，或使擴展不均勻。另一方面，非為塑性變形而發生彈性變形時，藉由去除應力則薄片容易恢復至原本的形狀。因此，透過表示在極大的拉伸量之100%伸長後會以何種程度恢復之指標的恢復率處於上述範圍，在大幅延伸黏著薄片時，可將薄膜的塑性變形壓低至最低限度，不易發生斷裂，且可均勻地擴展。 ・剝離薄片 第1黏著薄片10的表面亦可黏貼有剝離薄片。具體而言，剝離薄片係黏貼於第1黏著薄片10之第1黏著劑層12的表面。藉由剝離薄片黏貼於第1黏著劑層12的表面，在輸送時及保存時可保護第1黏著劑層12。剝離薄片係以可剝離方式黏貼於第1黏著薄片10，在使用第1黏著薄片10前，係由第1黏著薄片10剝離而去除。 剝離薄片係使用至少其中一面經剝離處理的剝離薄片。具體而言，可舉出例如具備剝離薄片用基材與在此基材的表面上塗佈剝離劑而形成的剝離劑層之剝離薄片。 剝離薄片用基材較佳為樹脂薄膜。構成作為剝離薄片用基材之樹脂薄膜的樹脂，可舉出例如聚對苯二甲酸乙二酯樹脂、聚對苯二甲酸丁二酯樹脂及聚萘二甲酸乙二酯樹脂等聚酯樹脂薄膜，以及聚丙烯樹脂及聚乙烯樹脂等聚烯烴樹脂等。 剝離劑可舉出例如聚矽氧系樹脂、烯烴系樹脂、異戊二烯系樹脂、丁二烯系樹脂等橡膠系彈性體、長鏈烷基系樹脂、醇酸系樹脂及氟系樹脂。 剝離薄片的厚度不特別限制，較佳為10μm以上200μm以下，更佳為20μm以上150μm以下。 ・黏著薄片之製造方法 第1黏著薄片10及其他本說明書所記載之黏著薄片之製造方法不特別限制，可藉由週知之方法來製造。 例如，將設置於剝離薄片上的黏著劑層貼合於基材的單面，可製造黏著劑層的表面上黏貼有剝離薄片的黏著薄片。又，藉由將設置於剝離薄片上的緩衝層與基材貼合並去除剝離薄片，可獲得緩衝層與基材之層合體。然後，將設置於剝離薄片上的黏著劑層貼合於層合體之基材側，可製造黏著劑層的表面上黏貼有剝離薄片的黏著薄片。此外，在將緩衝層設於基材的兩面時，黏著劑層係形成於緩衝層上。黏貼於黏著劑層的表面之剝離薄片只要在使用黏著薄片前適宜剝離而去除即可。 黏著薄片之製造方法之更具體的一例可舉出下列方法。首先，調製構成黏著劑層之黏著性組成物及視需求進一步含有溶媒或分散媒的塗佈液。其次，將塗佈液藉由塗佈手段塗佈於基材的一面上而形成塗膜。塗佈手段可舉出例如模塗佈機、簾式塗佈機、噴霧塗佈機、狹縫塗佈機及刀式塗佈機等。其次，藉由使該塗膜乾燥，可形成黏著劑層。就塗佈液而言，只要可進行塗佈則其性質狀態不特別限定。塗佈液有時含有供形成黏著劑層的成分作為溶質，有時則含有供形成黏著劑層的成分作為分散質。同樣地，亦可在基材之單面或緩衝層上直接塗佈黏著劑組成物而形成黏著劑層。 再者，黏著薄片之製造方法之更具體的另一例可舉出下列方法。首先，在前述剝離薄片的剝離面上塗佈塗佈液而形成塗膜。其次，使塗膜乾燥而形成由黏著劑層與剝離薄片所構成的層合體。接著，對此層合體之黏著劑層之與剝離薄片側的面相反之一側的面黏貼基材，亦可獲得黏著薄片與剝離薄片的層合體。此層合體中之剝離薄片能以工程材料之形式剝離，亦可在對黏著劑層黏貼被黏物(例如半導體晶片及半導體晶圓等)前保護黏著劑層。 當塗佈液含有交聯劑時，只要藉由改變塗膜的乾燥條件(例如溫度及時間等)，或透過另外進行加熱處理，例如使塗膜內之(甲基)丙烯酸系共聚物與交聯劑的交聯反應進行，而於黏著劑層內以期望的存在密度形成交聯結構即可。為了使此交聯反應充分進行，亦可藉由上述方法等使黏著劑層層合於基材後，進行將所得黏著薄片靜置於例如23℃、相對濕度50%的環境下數日等的熟化。 第1黏著薄片10的厚度較佳為60μm以上，更佳為70μm以上，再更佳為80μm以上。第1黏著薄片10的厚度較佳為400μm以下，更佳為300μm以下。 [本實施形態之效果] 根據本實施形態之擴展方法，透過使用具有第1基材11及第1黏著劑層12的第1黏著薄片10，切割步驟及擴展步驟能以一片黏著薄片(第1黏著薄片10)來實施。亦即，根據本實施形態之擴展方法，不需要如習知製程般在每個步驟中換貼黏著薄片，而能夠簡化製程。 又，根據第1黏著薄片10，由於劃出深度50μm的切口之第1基材11的拉伸伸度為300%以上，即使在切割步驟中對第1基材11劃出既定深度的切口並直接在擴展步驟中拉伸第1黏著薄片10，亦可不使該第1黏著薄片10斷裂地擴展複數個半導體晶片CP彼此之間隔。因此，相較於習知黏著薄片(黏著劑層與2個基材層層合而成的黏著薄片)，第1黏著薄片10其膠帶構成更為簡單且亦可簡化製程。 再者，根據本實施形態，可提供一種包含本實施形態之擴展方法的半導體裝置之製造方法。 [實施形態的變形] 本發明不受上述實施形態任何限定。本發明在可達成本發明目的之範圍內係包含變更上述實施形態之形態等。 例如，半導體晶圓或半導體晶片中之電路等非限定於圖示之排列或形狀等。半導體封裝體中與外部端子電極的連接構造等亦未限定於前述實施形態中所說明之形態。於前述實施形態中，係舉出製造FO-WLP型半導體封裝體之形態為例加以說明，惟本發明亦可適用於製造扇入型WLP等其他的半導體封裝體之形態。 上述FO-WLP之製造方法亦可變更一部分步驟或省略一部分步驟。 切割步驟中的切割，為替代使用上述之切斷手段，亦可對半導體晶圓照射雷射光來進行。例如，藉由照射雷射光，亦可將半導體晶圓完全切斷而單片化成複數個半導體晶片。於此等方法中，雷射光的照射可從半導體晶圓之任一側進行。實施例 以下舉出實施例對本發明更詳細地加以說明。本發明不受此等實施例任何限定。 (黏著薄片的製作) [實施例1] 將丙烯酸丁酯(BA)62質量份、甲基丙烯酸甲酯(MMA) 10質量份及丙烯酸2-羥基乙酯(2HEA)28質量份共聚合而得到丙烯酸系共聚物。調製對此丙烯酸系共聚物加成甲基丙烯酸2-異氰酸基乙酯(昭和電工股份有限公司製、製品名「Karenz MOI」(註冊商標))之樹脂(丙烯酸A)的溶液(黏著劑主劑，固含量35.0質量%)。就加成率，係相對於丙烯酸系共聚物的2HEA100莫耳%，將甲基丙烯酸2-異氰酸基乙酯定為90莫耳%。 所得樹脂(丙烯酸A)的重量平均分子量(Mw)為60萬，Mw/Mn為4.5。根據凝膠滲透層析(GPC)法測定標準聚苯乙烯換算的重量平均分子量Mw及數量平均分子量Mn，並由各測定值求出分子量分布(Mw/Mn)。 對此黏著劑主劑添加UV樹脂A(10官能胺基甲酸酯丙烯酸酯、Mitsubishi Chemical股份有限公司製、製品名「UV-5806」、Mw=1740、包含光聚合起始劑)及作為交聯劑之甲苯二異氰酸酯系交聯劑(Nippon Polyurethane Industry股份有限公司製、製品名「Colonate L」)。相對於黏著劑主劑中之固含量100質量份，添加50質量份的UV樹脂A，添加0.2質量份的交聯劑。添加後，攪拌30分鐘，而調製成黏著劑組成物A1。 其次，將調製之黏著劑組成物A1的溶液塗佈於聚對苯二甲酸乙二酯(PET)系剝離薄膜(LINTEC股份有限公司製、製品名「SP-PET381031」、厚度38μm)上並使其乾燥，而將厚度40μm的黏著劑層形成於剝離薄膜上。就此黏著劑層，於本實施例中係與前述實施形態中之說明對應而有稱為第1黏著劑層。 對該第1黏著劑層貼合作為基材之聚酯系聚胺基甲酸酯彈性體薄片(Sheedom股份有限公司製，製品名「Pyrex DUS202」，厚度100μm)後，裁切去除寬度方向之端部的多餘部分而製成黏著薄片SA1。就此基材，於本實施例中係與前述實施形態中之說明對應而有稱為第1基材。對第1基材劃出深度50μm的切口，並測定該第1基材的拉伸伸度的結果為300%以上。依循前述拉伸伸度之測定方法，測定劃出切口後之第1基材的拉伸伸度。 (晶片間隔之測定方法) 將實施例1中所得之黏著薄片SA1切成210mm×210mm而得到試驗用薄片。此時，係以裁切後之薄片的各邊與黏著薄片中之第1基材之MD方向平行或垂直的方式裁切。 剝離試驗用薄片之剝離薄膜，對露出之第1黏著劑層的中心部黏貼6吋矽晶圓。其次，切割6吋矽晶圓，而得到共計25個大小3mm×3mm的晶片。藉由切割而得之共計25個晶片係沿X軸方向排成5列，及沿Y軸方向排成5列。此外，於矽晶圓的切割時，亦對試驗用薄片劃出深度50μm的切口。 其次，將黏貼有晶片的試驗用薄片設置於可實施雙軸延伸的擴展裝置(隔開裝置)。圖5示出說明該擴展裝置100的俯視圖。圖5中，X軸及Y軸係處於彼此正交之關係，將該X軸的正方向設為+X軸方向，該X軸的負方向設為-X軸方向，將該Y軸的正方向設為+Y軸方向，該Y軸的負方向設為-Y軸方向。試驗用薄片200係以各邊與X軸或Y軸平行的方式設置於擴展裝置100。其結果，試驗用薄片200中之基材之MD方向係與X軸或Y軸呈平行。此外，圖5中係省略晶片。 如圖5所示，擴展裝置100係於+X軸方向、-X軸方向、+Y軸方向及-Y軸方向各具備5個保持手段101(共計20個保持手段101)。各方向的5個保持手段101當中，保持手段101A係位於兩端，保持手段101C係位於中央，保持手段101B則位於保持手段101A與保持手段101C之間。藉由此等保持手段101夾持試驗用薄片200的各邊。 於此，如圖5所示，試驗用薄片200的一邊為210mm。又，各邊之保持手段101彼此之間隔為40mm。此外，試驗用薄片200之一邊的端部(薄片的頂點)與存在於該邊且最靠近該端部之保持手段101A之間隔為25mm。 接著，使對應各個保持手段101的未圖示之複數個張力賦予手段驅動，而使保持手段101各自獨立地移動。以夾具固定試驗用薄片的四邊，朝X軸方向及Y軸方向各以5mm/s的速度、200mm的擴展量擴展試驗用薄片。其後，藉由環框保持試驗用薄片200的擴展狀態。 在保持擴展狀態的狀態下以數位顯微鏡測定各晶片間的距離，以各晶片間之距離的平均值作為晶片間隔。 晶片間隔若為1800μm以上則判定為合格「A」；晶片間隔若未達1800μm則判定為不合格「B」。 (晶片整齊排列性之測定方法) 測定從測定上述晶片間隔之工件的X軸及Y軸方向之相鄰晶片之中心線的偏移率。 圖6示出具體的測定方法的示意圖。 選出沿X軸方向排列有5個晶片的一行，以數位顯微鏡測定該列當中晶片之最上端與晶片之最下端的距離Dy。Y軸方向的偏移率係基於下述數式(數3)算出。Sy為Y軸方向的晶片尺寸，於本實施例中係定為3mm。 Y軸方向的偏移率[%]=[(Dy-Sy)/2]/Sy×100…(數3) 對於沿X軸方向排列有5個晶片的其他4行，亦以同樣方式算出Y軸方向的偏移率。 選出沿Y軸方向排列有5個晶片的一行，以數位顯微鏡測定該列當中晶片之最左端與晶片之最右端的距離Dx。X軸方向的偏移率係基於下述數式(數4)算出。Sx為X軸方向的晶片尺寸，於本實施例中係定為3mm。 X軸方向的偏移率[%]=[(Dx-Sx)/2]/Sx×100…(數4) 對於沿Y軸方向排列有5個晶片的其他4行，亦以同樣方式算出X軸方向的偏移率。 數式(數3)及(數4)中，之所以除以2，係為了以絕對值表現擴展後之晶片從既定位置偏移的最大距離之故。 就X軸方向及Y軸方向的所有列(共計10列)，將偏移率未達±10%的情形判定為合格「A」；若有1列以上為±10%以上則判定為不合格「B」。 使用實施例1之黏著薄片擴展的結果，可在不使黏著薄片斷裂下擴展複數個半導體晶片CP彼此之間隔。再者，擴展黏著薄片後之晶片間隔的評定結果為合格「A」判定；晶片整齊排列性的評定結果為合格「A」判定。[First embodiment] The following describes an expansion method of the present embodiment and a method for manufacturing a semiconductor device including the expansion method. FIG. 1 (FIG. 1A and FIG. 1B), FIG. 2, FIG. 3 (FIG. 3A and FIG. 3B), and FIG. 4 (FIG. 4A and FIG. 4B) are cross-sectional schematic diagrams illustrating a method for manufacturing a semiconductor device including the expansion method of the present embodiment. The expansion method of the present embodiment comprises the following steps (P1) to (P3). (P1) A step of attaching a first adhesive sheet to the second wafer surface of a wafer having a first wafer surface and a second wafer surface. The first adhesive sheet has a first adhesive layer and a first substrate. (P2) A step of cutting a first wafer surface side, cutting the wafer and the first adhesive layer to singulate into a plurality of chips. The first wafer surface is the electrical surface of the chip, and the second wafer surface is the back of the chip. The cut is deep enough to reach the first adhesive layer. If the cut is of a predetermined depth, the first substrate can also be reached. (P3) A step of stretching the first adhesive sheet to increase the spacing between a plurality of chips. FIG. 1A is a diagram for illustrating step (P1). FIG. 1A shows a wafer W to which the first adhesive sheet 10 is attached. The semiconductor wafer W has an electrical surface W1 as the first wafer surface and a back surface W3 as the second wafer surface. A circuit W2 is formed on the electrical surface W1. The semiconductor wafer W may be, for example, a silicon wafer or a compound semiconductor wafer such as gallium arsenide. As a method for forming a circuit W2 on the conductive surface W1 of the semiconductor wafer W, a general method may be cited, such as an etching method and a stripping method. The semiconductor wafer W is held on the first adhesive sheet 10. In the present embodiment, the process is performed in a state where the conductive surface W1 is exposed, but other forms may be exemplified, such as a process in a state where a protective member such as a protective sheet or a protective film is attached to the conductive surface W1. The first adhesive sheet 10 has a first adhesive layer 12 and a first substrate 11. The first substrate 11 of the present embodiment has a tensile elongation of 300% or more when a cut of a predetermined depth is made and the tensile elongation is measured. Specifically, the tensile elongation of the first substrate 11 with a cut of 50 μm in depth is preferably 300% or more. If the tensile elongation is 300% or more, even if a cut of 50 μm in depth is made on the first substrate 11 in the cutting step, the first adhesive sheet 10 can be directly expanded without replacing another adhesive sheet, and the interval between the semiconductor chips CP can be expanded without breaking the first adhesive sheet. The tensile elongation of the first substrate 11 with a cut of 50 μm in depth is preferably 3000% or less. For example, even when a 50 μm deep cut is formed on the first substrate 11 having a thickness of 60 μm, that is, when a cut is formed on the first substrate 11 having a depth of about 83% (50 μm/60 μm ≒ 0.83) of the thickness of 60 μm, as long as the first substrate 11 has the tensile elongation as described above, the first adhesive sheet will not break even after expansion. The depth of the cut is preferably 85% or less, more preferably 70% or less, and even more preferably 60% or less relative to the thickness of the first substrate 11. (Determination of tensile elongation) The substrate is cut into a size of 15 mm × 140 mm to obtain a test piece. For this test piece, the tensile elongation at 23°C is measured in accordance with JIS K6732:2006. Specifically, the above-mentioned test piece is subjected to a tensile test at a speed of 200 mm/min with a tensile testing machine (manufactured by Shimadzu Corporation, product name "Autograph AG-IS 500N"), with the chuck distance set to 100 mm, and the elongation (%) is measured. The first substrate 11 has a first substrate surface 11a and a first substrate back surface 11b on the opposite side of the first substrate surface 11a (see Figure 2). The first adhesive layer 12 is laminated on the first substrate surface 11a. Other details related to the first adhesive sheet 10 are described later. [Back grinding step] The semiconductor wafer W prepared in step (P1) is preferably a wafer obtained by a back grinding step. In the back grinding step, the surface on the opposite side of the circuit surface W1 of the semiconductor wafer W is ground until the wafer reaches a predetermined thickness. The back side W3 is preferably a surface formed by grinding the back side of the semiconductor wafer W. The surface exposed after grinding the semiconductor wafer W is referred to as the back side W3. The method of grinding the semiconductor wafer W is not particularly limited, and known methods such as using a grinder can be cited. When grinding the semiconductor wafer W, in order to protect the circuit W2, it is preferred to stick an adhesive sheet called a "back grinding sheet" to the circuit surface W1. The back grinding of the wafer is to fix the circuit surface W1 side of the semiconductor wafer W, that is, the back grinding sheet side, by a suction cup table, etc., and grind the back side where the circuit is not formed by a grinder. The thickness of the semiconductor wafer W before grinding is not particularly limited, and is generally not less than 500 μm and not more than 1000 μm. The thickness of the semiconductor wafer W after grinding is not particularly limited, and is generally not less than 20 μm and not more than 500 μm. [Step of sticking the first adhesive sheet] The semiconductor wafer W prepared in step (P1) is preferably a wafer obtained by a back grinding step and further a sticking step of sticking the first adhesive sheet 10 to the back surface W3. This sticking step is referred to as the sticking step of the first adhesive sheet. As described later, in step (P2), the semiconductor wafer W is singulated into a plurality of semiconductor chips CP by cutting, and in step (P3), the intervals between the plurality of semiconductor chips CP are expanded by expansion. In this embodiment, in order to hold the semiconductor wafer W when cutting the semiconductor wafer W and to hold the semiconductor chip CP when expanding the adhesive sheet, the first adhesive sheet 10 is pasted on the back side W3. [Cutting step] Figure 1B is a figure used to illustrate step (P2). Step (P2) is called a cutting step. Figure 1B shows a plurality of semiconductor chips CP held on the first adhesive sheet 10. Cutting is a cutting method using a cutting saw or the like. The semiconductor wafer W with the first adhesive sheet 10 pasted on the back side W3 is singulated by cutting to form a plurality of semiconductor chips CP. The electrical surface W1 as the first wafer surface is equivalent to the electrical surface of the chip. The back side W3 as the second wafer surface is equivalent to the back side of the chip. In this embodiment, a cut is made from the side of the conductive surface W1 to cut the semiconductor wafer W, and further cut the first adhesive layer 12. The cutting depth during cutting is not particularly limited as long as it is a depth that can separate the semiconductor wafer W and the first adhesive layer 12. In this embodiment, based on the viewpoint of more accurately cutting the semiconductor wafer W and the first adhesive layer 12, the form in which the cut goes deep into the first substrate 11 is used as an example to illustrate as shown in Figure 1B. In addition, the present invention is not limited to this form. For example, in other embodiments, it is also preferred to cut the first adhesive layer 12 by cutting so that the cut does not reach the first substrate 11. FIG2 is a schematic cross-sectional view showing a portion of the semiconductor wafer W and the first adhesive layer 12 cut in the cutting step. In the present embodiment, a cut of a predetermined depth is made in the first substrate 11. As shown in FIG2, among the depths of the cuts made in the cutting step, the depth of the cut on the first substrate surface 11a side of the first substrate 11 is set to T2. The thickness of the first substrate 11 is set to T1. At this time, the thickness T1 and the cut depth T2 preferably satisfy the following relationship (number 1). The units of T1 and T2 are μm (micrometer). T2≦0.2×T1… (number 1) In the present embodiment, by the cutting step, a laminated structure in which the first adhesive layer 12 which has been singulated is interposed between the plurality of semiconductor chips CP and the first substrate 11 on the back surface W3 side of the semiconductor chip CP can be obtained. [Expansion step] FIG3A is a diagram for explaining step (P3). Step (P3) is referred to as the expansion step. FIG3A shows a state in which the first adhesive sheet 10 is stretched to expand the interval between the plurality of semiconductor chips CP after the cutting step. When expanding the intervals between a plurality of semiconductor chips CP, it is preferred to stretch the expansion sheet while the plurality of semiconductor chips CP are maintained by an adhesive sheet called an expansion sheet. In the present embodiment, the first adhesive sheet 10 is preferably the expansion sheet. In the expansion step of the present embodiment, the first adhesive sheet 10 used in the cutting step is directly used. In the cutting step of the present embodiment, a cut of a predetermined depth is made on the first substrate 11, and as for the first substrate, since the tensile elongation of the first substrate 11 with a cut of 50 μm in depth is greater than 300%, the first substrate 11 will not break even if the expansion step is performed. The method of stretching the first adhesive sheet 10 in the expansion step is not particularly limited. Methods for stretching the first adhesive sheet 10 include, for example, a method of stretching the first adhesive sheet 10 by pressing a ring-shaped or circular expander, and a method of stretching the first adhesive sheet 10 by grasping the outer periphery of the first adhesive sheet 10 using a clamping member or the like. In this embodiment, since the interval D1 between the plurality of semiconductor chips CP depends on the size of the semiconductor chip CP, there is no particular restriction. In particular, the interval D1 between adjacent semiconductor chips CP among the plurality of semiconductor chips CP adhered to a single side of the adhesive sheet is preferably greater than 200 μm. In addition, the upper limit of the interval between the semiconductor chips CP is not particularly limited. The upper limit of the interval between the semiconductor chips CP may be, for example, 6000 μm. [Energy ray irradiation step] After stretching the first adhesive sheet 10 and expanding the interval between the plurality of semiconductor chips CP, it is preferred to implement a step of irradiating the first adhesive layer 12 with energy rays to harden the first adhesive layer 12. This step is referred to as an "energy ray irradiation step". The energy rays irradiated to the first adhesive layer 12 are appropriately selected according to the type of energy ray curable resin contained in the first adhesive layer 12. When the first adhesive layer 12 contains an ultraviolet ray curable resin and has ultraviolet curability, in the energy ray irradiation step, the first adhesive sheet 10 is irradiated with ultraviolet rays. By hardening the first adhesive layer 12 after the expansion step, the shape retention of the first adhesive sheet 10 after the extension can be improved. As a result, it is easy to maintain the neat arrangement of the plurality of semiconductor chips CP adhered to the first adhesive layer 12. The energy ray irradiation step can be performed after the expansion step and before the first adhesive sheet peeling step described later. From the perspective of easily maintaining the neat arrangement of the plurality of semiconductor chips CP, the energy ray irradiation step is preferably performed after the expansion step and before the first transfer step. [First transfer step] In this embodiment, after the expansion step, a step of transferring the plurality of semiconductor chips CP adhered to the first adhesive sheet 10 to another adhesive sheet (e.g., the second adhesive sheet) (hereinafter referred to as the "first transfer step") may be implemented. FIG. 3B shows a diagram illustrating the step of transferring the plurality of semiconductor chips CP adhered to the first adhesive sheet 10 to the second adhesive sheet 20 (hereinafter referred to as the "first transfer step"). The second adhesive sheet 20 is not particularly limited as long as it can hold a plurality of semiconductor chips CP. The second adhesive sheet 20 has a second substrate 21 and a second adhesive layer 22. When sealing the plurality of semiconductor chips CP on the second adhesive sheet 20, it is preferred to use an adhesive sheet for the sealing step, and more preferably a heat-resistant adhesive sheet, as the second adhesive sheet 20. Furthermore, when a heat-resistant adhesive sheet is used as the second adhesive sheet 20, the second substrate 21 and the second adhesive layer 22 are preferably formed of heat-resistant materials that can withstand the temperature applied in the sealing step. In the present embodiment, when performing the transfer step, for example, after the expansion step, the second adhesive sheet 20 is attached to the electrical path W1 of the plurality of semiconductor chips CP, and then the first adhesive sheet 10 is peeled off from the back surface W3. [Step of peeling off the first adhesive sheet] FIG. 4A is a diagram for explaining the step of peeling off the first adhesive sheet 10 from the back surface W3. This step is referred to as the step of peeling off the first adhesive sheet. After the step of peeling off the first adhesive sheet, it is also preferable to maintain the interval D1 between the plurality of semiconductor chips CP expanded in the expansion step. When peeling off the first adhesive sheet 10 from the back surface W3, the first adhesive layer 12 of the first adhesive sheet 10 preferably contains an energy ray curable resin from the viewpoint of suppressing adhesive residues from remaining on the back surface W3. When the first adhesive layer 12 contains an energy ray-hardening resin, the first adhesive sheet 10 is irradiated with energy rays to harden the energy ray-hardening resin. If the energy ray-hardening resin is hardened, the cohesive force of the adhesive component in the first adhesive layer 12 can be increased, and the adhesive force between the first adhesive layer 12 and the back surface W3 of the semiconductor chip CP can be reduced or eliminated. Energy rays can be, for example, ultraviolet rays (UV) or electron beams (EB), preferably ultraviolet rays. Therefore, the energy ray-hardening resin is preferably an ultraviolet ray-hardening resin. The first substrate 11 preferably has energy ray permeability. The second adhesive sheet 20 can also be adhered to the ring frame together with a plurality of semiconductor chips CP. At this time, a ring frame is placed on the second adhesive layer 22 of the second adhesive sheet 20 and is lightly pressed to fix it. Thereafter, the second adhesive layer 22 exposed on the inner side of the ring frame is pressed against the electric path W1 of the semiconductor chip CP, and the plurality of semiconductor chips CP are fixed to the second adhesive sheet 20. [Sealing step] FIG. 4B shows a diagram illustrating the step of sealing the plurality of semiconductor chips CP using the sealing member 300 (hereinafter referred to as the "sealing step"). In this embodiment, the sealing step is performed after the plurality of semiconductor chips CP are transferred to the second adhesive sheet 20. In the sealing step, a plurality of semiconductor chips CP are covered by a sealing member 300 while the electric surface W1 is protected by the second adhesive sheet 20 to form a sealed body 3. The sealing member 300 is also filled between the plurality of semiconductor chips CP. Since the electric surface W1 and the circuit W2 are covered by the second adhesive sheet 20, the electric surface W1 can be prevented from being covered by the sealing member 300. Through the sealing step, a sealed body 3 can be obtained in which a plurality of semiconductor chips CP separated by a predetermined distance are embedded in the sealing member 300. In the sealing step, the plurality of semiconductor chips CP are preferably covered by the sealing member 300 while maintaining the interval D1 after the expansion step. After the sealing step, the second adhesive sheet 20 is peeled off. If the second adhesive film 20 is peeled off, the surface 3A in contact with the electrical path W1 of the semiconductor chip CP and the second adhesive film 20 of the sealing body 3 will be exposed. After the aforementioned expansion step, by repeating the transfer step and the expansion step any number of times, the distance between the semiconductor chips CP can be made the desired distance, and the orientation of the electrical path when the semiconductor chip CP is sealed can be made the desired orientation. [Other steps] After the adhesive film is peeled off from the sealing body 3, the sealing body 3 is sequentially processed as follows: a redistribution layer forming step is to form a redistribution layer electrically connected to the semiconductor chip CP; and a connection step is to electrically connect the redistribution layer to the external terminal electrode. By means of a redistribution layer forming step and a connection step with external terminal electrodes, the circuit of the semiconductor chip CP is electrically connected to the external terminal electrodes. The sealing body 3 connected to the external terminal electrodes is singulated with the semiconductor chip CP as a unit. The method of singulating the sealing body 3 is not particularly limited. By singulating the sealing body 3, a semiconductor package of the semiconductor chip CP unit is manufactured. The semiconductor package connected to the external electrode fanned out to the area outside the semiconductor chip CP is manufactured as a fan-out wafer-level package (FO-WLP). (First adhesive sheet) The first adhesive sheet 10 has a first substrate 11 and a first adhesive layer 12. The first adhesive layer 12 is laminated on the first substrate 11.・First substrate The first substrate 11 is not particularly limited in terms of its constituent material as long as it can properly perform its function in the desired step such as the expansion step (e.g., steps (P1) to (P3)). The first substrate 11 has a first substrate surface 11a and a first substrate back surface 11b. The first substrate back surface 11b is a surface on the opposite side of the first substrate surface 11a. In the first adhesive sheet 10, it is preferred that the first adhesive layer 12 is provided on one of the first substrate surface 11a and the first substrate back surface 11b, and it is preferred that the other side is not provided with an adhesive layer. In this embodiment, the first adhesive layer 12 is provided on the first substrate surface 11a. The material of the first substrate 11 is preferably a thermoplastic elastomer or a rubber-based material, and more preferably a thermoplastic elastomer, from the viewpoint of being easily and significantly extended. Furthermore, the material of the first substrate 11 is preferably a resin having a low glass transition temperature (Tg), from the viewpoint of being easily and significantly extended. The glass transition temperature (Tg) of such a resin is preferably below 90°C, more preferably below 80°C, and even more preferably below 70°C. Examples of thermoplastic elastomers include urethane elastomers, olefin elastomers, vinyl chloride elastomers, polyester elastomers, styrene elastomers, acrylic elastomers, and amide elastomers. Thermoplastic elastomers may be used alone or in combination of two or more. As thermoplastic elastomers, urethane elastomers are preferably used from the viewpoint of being easy to be greatly extended. Generally speaking, urethane elastomers are obtained by reacting long-chain polyols, chain extenders, and diisocyanates. Urethane elastomers are composed of a soft segment having a constituent unit derived from a long-chain polyol, and a hard segment having a polyurethane structure obtained by the reaction of a chain extender and diisocyanates. If urethane elastomers are classified according to the type of long-chain polyols, they can be divided into polyester polyurethane elastomers, polyether polyurethane elastomers, and polycarbonate polyurethane elastomers. The urethane elastomer may be used alone or in combination of two or more. In the present embodiment, the urethane elastomer is preferably a polyether polyurethane elastomer from the viewpoint of being easy to extend to a large extent. Examples of long-chain polyols include polyester polyols such as lactone polyester polyols and adipate polyester polyols; polyether polyols such as polypropylene (ethylene) polyols and polytetramethylene ether glycol; polycarbonate polyols, etc. In the present embodiment, the long-chain polyol is preferably an adipate polyester polyol from the viewpoint of being easy to extend to a large extent. Examples of diisocyanates include 2,4-toluene diisocyanate, 2,6-toluene diisocyanate, 4,4'-diphenylmethane diisocyanate, and hexamethylene diisocyanate. In the present embodiment, the diisocyanate is preferably hexamethylene diisocyanate from the viewpoint of easy and large extension. Examples of the chain extender include low molecular weight polyols (e.g., 1,4-butanediol and 1,6-hexanediol) and aromatic diamines. Among these, 1,6-hexanediol is preferably used from the viewpoint of easy and large extension. Examples of the olefin elastomer include an elastomer comprising at least one resin selected from the group consisting of ethylene and α-olefin copolymers, propylene and α-olefin copolymers, butene and α-olefin copolymers, ethylene and propylene and α-olefin copolymers, ethylene and butene and α-olefin copolymers, propylene and butene-α-olefin copolymers, ethylene and propylene and butene-α-olefin copolymers, styrene and isoprene copolymers, and styrene and ethylene and butene copolymers. The olefinic elastomer may be used alone or in combination of two or more. The density of the olefinic elastomer is not particularly limited. For example, the density of the olefinic elastomer is preferably 0.860 g/cm 3 or more and less than 0.905 g/cm 3 , more preferably 0.862 g/cm 3 or more and less than 0.900 g/cm 3 , and particularly preferably 0.864 g/cm 3 or more and less than 0.895 g/cm 3. When the density of the olefinic elastomer satisfies the above range, the substrate has excellent conformity to unevenness when a semiconductor device such as a semiconductor wafer as an adherend is attached to the adhesive sheet. For olefinic elastomers, the mass ratio of monomers composed of olefinic compounds among all monomers used to form the elastomer (also referred to as "olefin content" in this specification) is preferably 50 mass% or more and 100 mass% or less. When the olefin content is too low, it is difficult to show the properties of an elastomer as a structural unit derived from olefins, making it difficult for the substrate to show flexibility and rubber elasticity. From the viewpoint of stably obtaining flexibility and rubber elasticity, the olefin content is preferably 50 mass% or more, and more preferably 60 mass% or more. Examples of styrene-based elastomers include styrene-copolymers of diene and styrene-olefin copolymers. Specific examples of the styrene-copolymer include styrene-butadiene copolymer, styrene-butadiene-styrene copolymer (SBS), styrene-butadiene-butylene-styrene copolymer, styrene-isoprene copolymer, styrene-isoprene-styrene copolymer (SIS), unhydrogenated styrene-copolymer such as styrene-ethylene-isoprene-styrene copolymer, hydrogenated styrene-copolymer such as styrene-ethylene/propylene-styrene copolymer (SEPS, hydrogenated product of styrene-isoprene-styrene copolymer) and styrene-ethylene-butylene-styrene copolymer (SEBS, hydrogenated product of styrene-butadiene copolymer), and the like. In industry, styrene-based elastomers include Tufprene (manufactured by Asahi Kasei Corporation), Kraton (manufactured by Kraton Polymer Japan Co., Ltd.), Sumitomo TPE-SB (manufactured by Sumitomo Chemical Co., Ltd.), Epofriend (manufactured by DAICEL Co., Ltd.), RABALON (manufactured by Mitsubishi Chemical Co., Ltd.), Septon (manufactured by Kuraray Co., Ltd.), and Tuftec (manufactured by Asahi Kasei Corporation). Styrene-based elastomers may be hydride or non-hydrogenate. Examples of rubber materials include natural rubber, synthetic isoprene rubber (IR), butadiene rubber (BR), styrene-butadiene rubber (SBR), chloroprene rubber (CR), acrylonitrile-butadiene copolymer rubber (NBR), butyl rubber (IIR), halogenated butyl rubber, acrylic rubber, urethane rubber, and polysulfide rubber. The rubber material may be used alone or in combination of two or more. The first substrate 11 may also be a laminated film formed by laminating multiple layers of films made of the above-mentioned materials (e.g., thermoplastic elastomers or rubber materials). Furthermore, the first substrate 11 may also be a laminated film formed by laminating a film made of the above-mentioned material (e.g., a thermoplastic elastomer or a rubber-based material) with other films. The first substrate 11 may also contain additives in the film with the above-mentioned resin-based material as the main material. Examples of additives include pigments, dyes, flame retardants, plasticizers, antistatic agents, lubricants, and fillers. Examples of pigments include titanium dioxide and carbon black. Examples of fillers include organic materials such as melamine resins, inorganic materials such as fuming silica, and metal materials such as nickel particles. The content of the additive that can be contained in the film is not particularly limited, but is preferably limited to a range that allows the first substrate 11 to perform the desired function. The first substrate 11 is processed on one or both sides of the first substrate 11 to improve the adhesion with the first adhesive layer 12 laminated on the surface of the first substrate 11. When the first adhesive layer 12 contains an energy ray-curing adhesive, the first substrate 11 preferably has the ability to penetrate the energy ray. When ultraviolet rays are used as energy rays, the first substrate 11 preferably has the ability to penetrate the ultraviolet rays. When electron beams are used as energy rays, the first substrate 11 preferably has the ability to penetrate electron beams. The thickness of the first substrate 11 is not limited as long as the first adhesive sheet 10 can properly perform its function in the desired step. The thickness of the first substrate 11 is preferably 60 μm or more, and more preferably 80 μm or more. In addition, the thickness of the first substrate 11 is preferably 250 μm or less, and more preferably 200 μm or less. Furthermore, when the thickness of the first substrate 11 is measured at multiple locations at 2 cm intervals in the in-plane direction of the first substrate surface 11a or the first substrate back surface 11b of the first substrate 11, the standard deviation of the thickness is preferably 2 μm or less, more preferably 1.5 μm or less, and even more preferably 1 μm or less. By having the standard deviation of 2 μm or less, the first adhesive sheet 10 has a highly accurate thickness, and the first adhesive sheet 10 can be stretched uniformly. Preferably, the tensile elasticity in the MD direction and the CD direction of the first substrate 11 at 23°C is 10 MPa or more and 350 MPa or less, respectively, and the 100% stress in the MD direction and the CD direction of the first substrate 11 at 23°C is 3 MPa or more and 20 MPa or less, respectively. By having the tensile elasticity and the 100% stress in the above ranges, the first adhesive sheet 10 can be greatly stretched. The 100% stress of the first substrate 11 is a value obtained in the following manner. A test piece of 150 mm (in the length direction) × 15 mm (in the width direction) is cut out from the first substrate 11. The two ends of the cut test piece in the length direction are clamped with a clamp so that the length between the clamps is 100 mm. After the test piece is clamped with the clamp, it is stretched in the length direction at a speed of 200 mm/min, and the measured value of the tensile force is read when the length between the clamps becomes 200 mm. The 100% stress of the first substrate 11 is a value obtained by dividing the measured value of the read tensile force by the cross-sectional area of the substrate. The cross-sectional area of the first substrate 11 is calculated as the length in the width direction of 15 mm × the thickness of the first substrate 11 (test piece). The cutting is performed in a manner that the flow direction (MD direction) of the substrate during manufacture or the direction orthogonal to the MD direction (CD direction) is consistent with the length direction of the test piece. In addition, in this tensile test, the thickness of the test piece is not particularly limited and may be the same as the thickness of the substrate to be tested. At 23°C, the elongation at break of the first substrate 11 in the MD direction and the CD direction is preferably 100% or more, respectively. The first adhesive sheet 10 can be greatly extended without breaking because the elongation at break of the first substrate 11 in the MD direction and the CD direction is 100% or more, respectively. The tensile elasticity (MPa) of the substrate and the elongation at break (%) of the substrate can be measured as follows. The substrate is cut into 15 mm × 140 mm to obtain a test piece. The elongation at break and the tensile modulus at 23°C were measured for the test piece in accordance with JIS K7161:2014 and JIS K7127:1999. Specifically, the test piece was subjected to a tensile test at a speed of 200 mm/min with the distance between the chucks set to 100 mm using a tensile testing machine (manufactured by Shimadzu Corporation, product name "Autograph AG-IS 500N"), and the elongation at break (%) and the tensile modulus (MPa) were measured. The measurement was performed in both the flow direction (MD) and the direction perpendicular to the flow direction (CD) when the substrate was manufactured. ・First adhesive layer The first adhesive layer 12 is not particularly limited in terms of its constituent material as long as it can properly perform its function in the desired step such as the expansion step. The adhesive contained in the first adhesive layer 12 includes, for example, rubber adhesives, acrylic adhesives, silicone adhesives, polyester adhesives, and urethane adhesives. ・Energy ray curable resin (ax1) The first adhesive layer 12 preferably contains an energy ray curable resin (ax1). The energy ray curable resin (ax1) has an energy ray curable double bond in the molecule. The adhesive layer containing the energy ray curable resin can reduce the adhesive force by curing by irradiating energy rays. When the adherend and the adhesive sheet are to be separated, they can be easily separated by irradiating the adhesive layer with energy rays. The energy ray curable resin (ax1) is preferably a (meth)acrylic resin. The energy ray curable resin (ax1) is preferably an ultraviolet ray curable resin, and more preferably an ultraviolet ray curable (meth) acrylic resin. The energy ray curable resin (ax1) is a resin that polymerizes and cures upon exposure to energy rays. Examples of energy rays include ultraviolet rays and electron beams. Examples of energy ray curable resins (ax1) include low molecular weight compounds (monofunctional monomers, polyfunctional monomers, monofunctional oligomers, and polyfunctional oligomers) having energy ray polymerizable groups. Specifically, the energy ray-curable resin (ax1) may be trihydroxymethylpropane triacrylate, tetrahydroxymethylmethane tetraacrylate, pentaerythritol triacrylate, dipentaerythritol monohydroxy pentaacrylate, dipentaerythritol hexaacrylate, 1,4-butanediol diacrylate, 1,6-hexanediol diacrylate and other acrylates, cyclic aliphatic skeleton-containing acrylates such as dicyclopentadiene dimethoxy diacrylate and isoborneol acrylate, and acrylate compounds such as polyethylene glycol diacrylate, oligoester acrylate, urethane acrylate oligomer, epoxy-modified acrylate, polyether acrylate, and itaconic acid oligomer. The energy ray-curable resin (a1) may be used alone or in combination of two or more. The molecular weight of the energy ray curable resin (ax1) is generally in the range of 100 to 30,000, preferably in the range of 300 to 10,000. ・(Meth)acrylic copolymer (b1) The first adhesive layer 12 preferably further comprises a (meth)acrylic copolymer (b1). The (meth)acrylic copolymer is different from the aforementioned energy ray curable resin (ax1). The (meth)acrylic copolymer (b1) preferably has an energy ray curable carbon-carbon double bond. That is, in the present embodiment, the first adhesive layer 12 preferably contains an energy ray curable resin (ax1) and an energy ray curable (meth)acrylic copolymer (b1). The first adhesive layer 12 preferably contains the energy ray curable resin (ax1) in an amount of 10 parts by mass or more, more preferably 20 parts by mass or more, and even more preferably 25 parts by mass or more, relative to 100 parts by mass of the (meth)acrylic copolymer (b1). The first adhesive layer 12 preferably contains the energy ray curable resin (ax1) in an amount of 80 parts by mass or less, more preferably 70 parts by mass or less, and even more preferably 60 parts by mass or less, relative to 100 parts by mass of the (meth)acrylic copolymer (b1). The weight average molecular weight (Mw) of the (meth)acrylic copolymer (b1) is preferably 10,000 or more, more preferably 150,000 or more, and even more preferably 200,000 or more. Furthermore, the weight average molecular weight (Mw) of the (meth)acrylic copolymer (b1) is preferably 1.5 million or less, and more preferably 1 million or less. In addition, the weight average molecular weight (Mw) in the present specification is a standard polystyrene conversion value measured by gel permeation chromatography (GPC method). The (meth)acrylic copolymer (b1) is preferably a (meth)acrylate polymer (b2) having a functional group having energy ray curability (energy ray curable group) introduced into the side chain (hereinafter referred to as "energy ray curable polymer (b2)"). ・Energy ray curable polymer (b2) The energy ray curable polymer (b2) is preferably a copolymer obtained by reacting an acrylic copolymer (b21) having a monomer unit containing a functional group with an unsaturated group and a functional group bonded to the functional group. In this specification, (meth)acrylate refers to both acrylate and methacrylate. Other similar terms are the same. The acrylic copolymer (b21) preferably includes a constituent unit derived from a functional group-containing monomer and a constituent unit derived from a (meth)acrylate monomer or a derivative of a (meth)acrylate monomer. The functional group-containing monomer as a constituent unit of the acrylic copolymer (b21) is preferably a monomer having a polymerizable double bond and a functional group in the molecule. The functional group is preferably at least any one functional group selected from the group consisting of a hydroxyl group, a carboxyl group, an amino group, a substituted amino group, and an epoxy group. Examples of hydroxyl-containing monomers include 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 3-hydroxypropyl (meth)acrylate, 2-hydroxybutyl (meth)acrylate, 3-hydroxybutyl (meth)acrylate, and 4-hydroxybutyl (meth)acrylate. Hydroxyl-containing monomers may be used alone or in combination of two or more. Examples of carboxyl-containing monomers include ethylenically unsaturated carboxylic acids such as acrylic acid, methacrylic acid, crotonic acid, maleic acid, itaconic acid, and citric acid. Examples of carboxyl-containing monomers may be used alone or in combination of two or more. Examples of amino-containing monomers or substituted amino-containing monomers include aminoethyl (meth)acrylate and n-butylaminoethyl (meth)acrylate. Examples of amino-containing monomers or substituted amino-containing monomers may be used alone or in combination of two or more. The (meth)acrylate monomer constituting the acrylic copolymer (b21) is preferably a monomer having an alicyclic structure in the molecule (including an alicyclic structure monomer), in addition to a (meth)acrylate alkyl ester having an alkyl group with a carbon number of 1 to 20. The (meth)acrylate alkyl ester is preferably an (meth)acrylate alkyl ester having an alkyl group with a carbon number of 1 to 18. More preferably, the (meth)acrylate alkyl ester is, for example, methyl (meth)acrylate, ethyl (meth)acrylate, propyl (meth)acrylate, n-butyl (meth)acrylate, and 2-ethylhexyl (meth)acrylate. The (meth)acrylate alkyl ester may be used alone or in combination of two or more. Preferred monomers containing aliphatic cyclic structures include, for example, cyclohexyl (meth)acrylate, dicyclopentyl (meth)acrylate, adamantyl (meth)acrylate, isoborneol (meth)acrylate, dicyclopentenyl (meth)acrylate, and dicyclopentenyloxyethyl (meth)acrylate. Monomers containing aliphatic cyclic structures can be used alone or in combination of two or more. The acrylic copolymer (b21) preferably contains constituent units derived from the above-mentioned functional group-containing monomers in a ratio of 1% by mass or more, more preferably in a ratio of 5% by mass or more, and even more preferably in a ratio of 10% by mass or more. In addition, the acrylic copolymer (b21) preferably contains constituent units derived from the above-mentioned functional group-containing monomers in a ratio of less than 35% by mass, more preferably in a ratio of less than 30% by mass, and even more preferably in a ratio of less than 25% by mass. Furthermore, the acrylic copolymer (b21) preferably contains constituent units derived from (meth)acrylate monomers or derivatives thereof in a ratio of 50 mass % or more, more preferably 60 mass % or more, and even more preferably 70 mass % or more. In addition, the acrylic copolymer (b21) preferably contains constituent units derived from (meth)acrylate monomers or derivatives thereof in a ratio of 99 mass % or less, more preferably 95 mass % or less, and even more preferably 90 mass % or less. The acrylic copolymer (b21) can be obtained by copolymerizing the functional group-containing monomers as described above with (meth)acrylate monomers or derivatives thereof in a conventional manner. The acrylic copolymer (b21) may contain, in addition to the above-mentioned monomers, at least any one constituent unit selected from the group consisting of dimethylacrylamide, vinyl formate, vinyl acetate and styrene. By reacting the acrylic copolymer (b21) having the above-mentioned functional group-containing monomer unit with an unsaturated group-containing compound (b22) having a functional group bonded to the functional group, an energy ray-curable polymer (b2) can be obtained. The functional group of the unsaturated group-containing compound (b22) can be appropriately selected according to the type of functional group of the functional group-containing monomer unit of the acrylic copolymer (b21). For example, when the functional group of the acrylic copolymer (b21) is a hydroxyl group, an amino group, or a substituted amino group, the functional group of the unsaturated group-containing compound (b22) is preferably an isocyanate group or an epoxy group; when the functional group of the acrylic copolymer (b21) is an epoxy group, the functional group of the unsaturated group-containing compound (b22) is preferably an amino group, a carboxyl group, or an aziridine group. The unsaturated group-containing compound (b22) contains at least one energy-ray-polymerizable carbon-carbon double bond in one molecule, preferably contains one or more and six or more, and more preferably contains one or more and four or less. Examples of the unsaturated group-containing compound (b22) include 2-methacryloyloxyethyl isocyanate (2-isocyanatoethyl methacrylate), m-isopropenyl-α,α-dimethylbenzyl isocyanate, methacryloyl isocyanate, allyl isocyanate, 1,1-(diacryloyloxymethyl)ethyl isocyanate; based on the reaction of a diisocyanate compound or a polyisocyanate compound with hydroxyethyl (meth)acrylate, acryl monoisocyanate compound obtained by reaction of a diisocyanate compound or a polyisocyanate compound, a polyol compound and hydroxyethyl (meth)acrylate; glycidyl (meth)acrylate; (meth)acrylic acid, 2-(1-aziridinyl)ethyl (meth)acrylate, 2-vinyl-2-oxazoline, 2-isopropenyl-2-oxazoline, etc. The unsaturated group-containing compound (b22) is preferably used in a ratio (addition rate) of 50 mol% or more, more preferably 60 mol% or more, and even more preferably 70 mol% or more, relative to the molar number of the functional group-containing monomer of the acrylic copolymer (b21). Furthermore, the unsaturated group-containing compound (b22) is preferably used in a ratio of 95 mol% or less, more preferably 93 mol% or less, and even more preferably 90 mol% or less, relative to the molar number of the functional group-containing monomer of the acrylic copolymer (b21). In the reaction of the acrylic copolymer (b21) and the unsaturated group-containing compound (b22), the reaction temperature, pressure, solvent, time, presence or absence of a catalyst, and the type of catalyst can be appropriately selected according to the combination of the functional groups of the acrylic copolymer (b21) and the functional groups of the unsaturated group-containing compound (b22). Thereby, the functional group of the acrylic copolymer (b21) reacts with the functional group of the unsaturated group-containing compound (b22), so that the unsaturated group is introduced into the side chain of the acrylic copolymer (b21), and an energy ray-curable polymer (b2) is obtained. The weight average molecular weight (Mw) of the energy ray-curable polymer (b2) is preferably 10,000 or more, more preferably 150,000 or more, and even more preferably 200,000 or more. In addition, the weight average molecular weight (Mw) of the energy ray-curable polymer (b2) is preferably 1.5 million or less, and more preferably 1 million or less. ・Photopolymerization initiator (C) When the first adhesive layer 12 contains an ultraviolet-curable compound (e.g., an ultraviolet-curable resin), the first adhesive layer 12 preferably contains a photopolymerization initiator (C). By including a photopolymerization initiator (C) in the first adhesive layer 12, the polymerization curing time and the amount of light exposure can be reduced. Specific examples of the photopolymerization initiator (C) include benzoin compounds, acetophenone compounds, acylphosphine oxide compounds, titanocene compounds, thioxanone compounds, and peroxide compounds. Furthermore, the photopolymerization initiator (C) includes photosensitizers such as amines or quinones. More specific examples of the photopolymerization initiator (C) include 1-hydroxycyclohexyl phenyl ketone, 2-hydroxy-2-methyl-1-phenyl-propane-1-one, benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzyl phenyl sulfide, tetramethylthiuram monosulfide, azobisisobutyronitrile, bibenzyl, diacetyl, 8-chloroanthraquinone, and bis(2,4,6-trimethylbenzyl)phenylphosphine oxide. The photopolymerization initiator (C) may be used alone or in combination of two or more. The amount of the photopolymerization initiator (C) blended is preferably 0.01 to 10 parts by mass, more preferably 0.03 to 5 parts by mass, and even more preferably 0.05 to 5 parts by mass, relative to 100 parts by mass of the adhesive resin. When the energy ray-curable resin (ax1) and the (meth)acrylic copolymer (b1) are blended in the adhesive layer, the photopolymerization initiator (C) is preferably used in an amount of 0.1 parts by mass or more, and more preferably 0.5 parts by mass or more, relative to 100 parts by mass of the total amount of the energy ray-curable resin (ax1) and the (meth)acrylic copolymer (b1). Furthermore, when the energy ray curable resin (ax1) and the (meth) acrylic copolymer (b1) are mixed in the adhesive layer, the photopolymerization initiator (C) is preferably used in an amount of 10 parts by mass or less, and more preferably used in an amount of 6 parts by mass or less, relative to 100 parts by mass of the total amount of the energy ray curable resin (ax1) and the (meth) acrylic copolymer (b1). The first adhesive layer 12 may also appropriately mix other components in addition to the above-mentioned components. Examples of other components include a crosslinking agent (E). ・Crosslinking agent (E) The crosslinking agent (E) may be a multifunctional compound having a reactivity with a functional group possessed by the (meth) acrylic copolymer (b1) or the like. Examples of the multifunctional compound in the first adhesive sheet 10 include isocyanate compounds, epoxy compounds, amine compounds, melamine compounds, aziridine compounds, hydrazine compounds, aldehyde compounds, oxazoline compounds, metal alkoxide compounds, metal chelate compounds, metal salts, ammonium salts, and reactive phenol resins. The amount of the crosslinking agent (E) is preferably 0.01 parts by mass or more, more preferably 0.03 parts by mass or more, and even more preferably 0.04 parts by mass or more, relative to 100 parts by mass of the (meth)acrylic copolymer (b1). In addition, the amount of the crosslinking agent (E) is preferably 8 parts by mass or less, more preferably 5 parts by mass or less, and even more preferably 3.5 parts by mass or less, relative to 100 parts by mass of the (meth)acrylic copolymer (b1). The thickness of the first adhesive layer 12 is not particularly limited. The thickness of the first adhesive layer 12 is, for example, preferably 10 μm or more, more preferably 20 μm or more. Furthermore, the thickness of the first adhesive layer 12 is preferably 150 μm or less, more preferably 100 μm or less. The recovery rate of the first adhesive sheet 10 is preferably 70% or more, more preferably 80% or more, and even more preferably 85% or more. The recovery rate of the first adhesive sheet 10 is preferably 100% or less. By having the recovery rate within the above range, the adhesive sheet can be greatly extended. The recovery rate is measured by cutting the adhesive sheet into a test piece of 150 mm (length direction) × 15 mm (width direction), clamping the two ends of the length direction with a clamp so that the length between the clamps is 100 mm, then stretching it at a speed of 200 mm/min until the length between the clamps becomes 200 mm, keeping it at the state of 200 mm length for 1 minute, then restoring the length between the clamps to 100 mm at a speed of 200 mm/min, and then holding it at the state of 100 mm length. The length of the clamp is restored to 100mm and held for 1 minute. Thereafter, it is stretched in the longitudinal direction at a speed of 60mm/min. The length between the clamps when the measured value of the tensile force shows 0.1N/15mm is measured. The length obtained by subtracting the initial length between the clamps of 100mm from the length is set as L2 (mm). The length obtained by subtracting the initial length between the clamps of 200mm in the above-mentioned expanded state from the initial length between the clamps of 100mm is set as L1 (mm). The following formula (Formula 2) is used to calculate the recovery rate (%) = {1-(L2÷L1)}×100 ・・・ (Formula 2) When the recovery rate is within the above range, it means that the adhesive sheet can easily recover after being greatly stretched. Generally speaking, if a sheet with a yield point is extended beyond the yield point, the sheet is prone to plastic deformation, and the portion where plastic deformation occurs, that is, the portion that is stretched to the extreme, will become unevenly distributed. If the sheet in this state is further extended, the portion that is stretched to the extreme will break; or even if it does not break, the expansion will be uneven. In addition, in the stress-strain graph where strain is plotted on the x-axis and elongation is plotted on the y-axis, it is impossible to obtain the stress value at which the slope dx/dy becomes positive to 0 or negative. Even if the sheet does not show a clear yield point, as the amount of stretching increases, the sheet will still undergo plastic deformation, and will break in the same way, or the expansion will be uneven. On the other hand, when elastic deformation occurs instead of plastic deformation, the sheet easily returns to its original shape by removing the stress. Therefore, by having the recovery rate, which is an indicator indicating the degree of recovery after 100% elongation at an extremely large stretch, fall within the above range, the plastic deformation of the film can be minimized when the adhesive sheet is greatly stretched, and it is less likely to break and can be expanded uniformly. ・Peeling sheet A peeling sheet may also be attached to the surface of the first adhesive sheet 10. Specifically, the peeling sheet is attached to the surface of the first adhesive layer 12 of the first adhesive sheet 10. By attaching the peeling sheet to the surface of the first adhesive layer 12, the first adhesive layer 12 can be protected during transportation and storage. The peeling sheet is attached to the first adhesive sheet 10 in a releasable manner, and is peeled off and removed from the first adhesive sheet 10 before using the first adhesive sheet 10. The peeling sheet is a peeling sheet at least one side of which has been subjected to a peeling treatment. Specifically, there can be cited a peeling sheet having a peeling sheet substrate and a peeling agent layer formed by coating a peeling agent on the surface of the substrate. The peeling sheet substrate is preferably a resin film. Examples of the resin constituting the resin film as the substrate for the release sheet include polyester resin films such as polyethylene terephthalate resin, polybutylene terephthalate resin, and polyethylene naphthalate resin, and polyolefin resins such as polypropylene resin and polyethylene resin. Examples of the stripping agent include rubber elastomers such as polysilicone resins, olefin resins, isoprene resins, and butadiene resins, long-chain alkyl resins, alkyd resins, and fluorine resins. The thickness of the release sheet is not particularly limited, but is preferably 10 μm to 200 μm, and more preferably 20 μm to 150 μm.・Method for manufacturing adhesive sheets The method for manufacturing the first adhesive sheet 10 and other adhesive sheets described in this specification is not particularly limited and can be manufactured by a known method. For example, an adhesive layer provided on a release sheet is bonded to one side of a substrate to manufacture an adhesive sheet having a release sheet bonded to the surface of the adhesive layer. Furthermore, a composite body of the buffer layer and the substrate can be obtained by bonding a buffer layer provided on the release sheet to the substrate and removing the release sheet. Then, an adhesive layer provided on the release sheet is bonded to the substrate side of the composite body to manufacture an adhesive sheet having a release sheet bonded to the surface of the adhesive layer. In addition, when the buffer layer is provided on both sides of the substrate, the adhesive layer is formed on the buffer layer. The peeling sheet adhered to the surface of the adhesive layer can be removed by peeling it off appropriately before using the adhesive sheet. A more specific example of the manufacturing method of the adhesive sheet can be cited as follows. First, an adhesive composition constituting the adhesive layer and a coating liquid further containing a solvent or a dispersant as required are prepared. Next, the coating liquid is applied to one side of the substrate by a coating means to form a coating film. Coating means include, for example, die coaters, curtain coaters, spray coaters, slit coaters, and knife coaters. Next, by drying the coating film, an adhesive layer can be formed. As for the coating liquid, its properties are not particularly limited as long as it can be coated. The coating liquid sometimes contains a component for forming an adhesive layer as a solute, and sometimes contains a component for forming an adhesive layer as a dispersoid. Similarly, the adhesive layer can be formed by directly coating the adhesive composition on one side of the substrate or the buffer layer. Furthermore, another more specific example of the method for manufacturing the adhesive sheet is the following method. First, a coating liquid is applied on the peeling surface of the aforementioned peeling sheet to form a coating film. Next, the coating film is dried to form a laminate consisting of an adhesive layer and a peeling sheet. Next, a substrate is adhered to the side of the adhesive layer of this laminate opposite to the side of the peeling sheet, and a laminate of the adhesive sheet and the peeling sheet can also be obtained. The peeling sheet in this laminate can be peeled off in the form of an engineering material, and the adhesive layer can also be protected before an adherend (such as a semiconductor chip and a semiconductor wafer, etc.) is adhered to the adhesive layer. When the coating liquid contains a crosslinking agent, by changing the drying conditions of the coating (such as temperature and time, etc.), or by performing another heat treatment, for example, the crosslinking reaction between the (meth) acrylic copolymer and the crosslinking agent in the coating is carried out, and a crosslinked structure is formed in the adhesive layer with the desired density. In order to allow this crosslinking reaction to proceed fully, the adhesive layer can be laminated to the substrate by the above method, and then the resulting adhesive sheet can be left to mature for several days, for example, at 23°C and a relative humidity of 50%. The thickness of the first adhesive sheet 10 is preferably 60 μm or more, more preferably 70 μm or more, and even more preferably 80 μm or more. The thickness of the first adhesive sheet 10 is preferably 400 μm or less, and more preferably 300 μm or less. [Effects of the present embodiment] According to the expansion method of the present embodiment, by using the first adhesive sheet 10 having the first substrate 11 and the first adhesive layer 12, the cutting step and the expansion step can be performed with one adhesive sheet (the first adhesive sheet 10). That is, according to the expansion method of the present embodiment, there is no need to replace the adhesive sheet in each step as in the conventional process, and the process can be simplified. Furthermore, according to the first adhesive sheet 10, since the tensile elongation of the first substrate 11 with a cut of 50 μm in depth is 300% or more, even if a cut of a predetermined depth is made in the first substrate 11 in the cutting step and the first adhesive sheet 10 is directly stretched in the expansion step, the intervals between the plurality of semiconductor chips CP can be expanded without breaking the first adhesive sheet 10. Therefore, compared with the conventional adhesive sheet (adhesive sheet formed by laminating an adhesive layer and two substrate layers), the first adhesive sheet 10 has a simpler tape structure and can also simplify the process. Furthermore, according to the present embodiment, a method for manufacturing a semiconductor device including the expansion method of the present embodiment can be provided. [Variations of Implementation Forms] The present invention is not limited to the above-mentioned implementation forms. The present invention includes changes in the form of the above-mentioned implementation forms within the scope that can achieve the purpose of the present invention. For example, the circuits in the semiconductor wafer or semiconductor chip are not limited to the arrangement or shape shown in the figure. The connection structure with the external terminal electrode in the semiconductor package is also not limited to the form described in the above-mentioned implementation forms. In the above-mentioned implementation forms, the form of manufacturing FO-WLP type semiconductor package is cited as an example for explanation, but the present invention can also be applied to the form of manufacturing other semiconductor packages such as fan-in WLP. The above-mentioned FO-WLP manufacturing method can also change some steps or omit some steps. In the cutting step, instead of using the above-mentioned cutting means, the cutting can also be performed by irradiating the semiconductor wafer with laser light. For example, by irradiating laser light, a semiconductor wafer can be completely cut and singulated into a plurality of semiconductor chips. In these methods, the irradiation of laser light can be performed from either side of the semiconductor wafer. Examples The following examples are given to illustrate the present invention in more detail. The present invention is not limited to these examples. (Preparation of adhesive sheet) [Example 1] 62 parts by mass of butyl acrylate (BA), 10 parts by mass of methyl methacrylate (MMA) and 28 parts by mass of 2-hydroxyethyl acrylate (2HEA) are copolymerized to obtain an acrylic copolymer. A solution of a resin (acrylic acid A) was prepared by adding 2-isocyanatoethyl methacrylate (produced by Showa Denko Co., Ltd., product name "Karenz MOI" (registered trademark)) to this acrylic copolymer (adhesive main agent, solid content 35.0% by mass). The addition rate was 90% by mole of 2-isocyanatoethyl methacrylate relative to 100% by mole of 2HEA of the acrylic copolymer. The weight average molecular weight (Mw) of the obtained resin (acrylic acid A) was 600,000, and Mw/Mn was 4.5. The weight average molecular weight Mw and number average molecular weight Mn converted to standard polystyrene were measured by gel permeation chromatography (GPC), and the molecular weight distribution (Mw/Mn) was calculated from each measured value. To this adhesive main agent, UV resin A (10-functional urethane acrylate, manufactured by Mitsubishi Chemical Co., Ltd., product name "UV-5806", Mw = 1740, containing a photopolymerization initiator) and a toluene diisocyanate crosslinking agent (manufactured by Nippon Polyurethane Industry Co., Ltd., product name "Colonate L") as a crosslinking agent were added. With respect to 100 parts by mass of the solid content in the adhesive main agent, 50 parts by mass of UV resin A and 0.2 parts by mass of the crosslinking agent were added. After addition, the mixture was stirred for 30 minutes to prepare an adhesive composition A1. Next, the prepared adhesive composition A1 solution is applied to a polyethylene terephthalate (PET) release film (manufactured by LINTEC Co., Ltd., product name "SP-PET381031", thickness 38 μm) and dried to form an adhesive layer with a thickness of 40 μm on the release film. This adhesive layer is referred to as the first adhesive layer in this embodiment in correspondence with the description in the aforementioned embodiment. After the first adhesive layer is bonded to a polyester polyurethane elastomer sheet (manufactured by Sheedom Co., Ltd., product name "Pyrex DUS202", thickness 100 μm) as a base material, the excess portion at the end in the width direction is cut off to produce an adhesive sheet SA1. This substrate is referred to as the first substrate in this embodiment in correspondence with the description in the aforementioned embodiment. A cut with a depth of 50 μm is made on the first substrate, and the tensile elongation of the first substrate is measured to be more than 300%. The tensile elongation of the first substrate after the cut is measured according to the aforementioned tensile elongation measurement method. (Method for measuring chip spacing) The adhesive sheet SA1 obtained in Example 1 is cut into 210 mm × 210 mm to obtain a test sheet. At this time, the sheets are cut in such a way that the edges of the cut sheets are parallel or perpendicular to the MD direction of the first substrate in the adhesive sheet. The peeling film of the test sheet is peeled off, and a 6-inch silicon wafer is attached to the center of the exposed first adhesive layer. Next, the 6-inch silicon wafer is cut to obtain a total of 25 chips of 3 mm × 3 mm in size. A total of 25 chips obtained by cutting are arranged in 5 rows along the X-axis direction and 5 rows along the Y-axis direction. In addition, when cutting the silicon wafer, a cut with a depth of 50μm is also made on the test sheet. Next, the test sheet with the chip attached is placed in an expansion device (partitioning device) that can implement dual-axis extension. Figure 5 shows a top view of the expansion device 100. In Figure 5, the X-axis and the Y-axis are in a mutually orthogonal relationship, the positive direction of the X-axis is set to the +X-axis direction, the negative direction of the X-axis is set to the -X-axis direction, the positive direction of the Y-axis is set to the +Y-axis direction, and the negative direction of the Y-axis is set to the -Y-axis direction. The test sheet 200 is set in the expansion device 100 in such a manner that each side is parallel to the X-axis or the Y-axis. As a result, the MD direction of the substrate in the test sheet 200 is parallel to the X-axis or the Y-axis. In addition, the chip is omitted in FIG5 . As shown in FIG5 , the expansion device 100 has 5 holding means 101 in each of the +X-axis direction, the -X-axis direction, the +Y-axis direction, and the -Y-axis direction (a total of 20 holding means 101). Among the 5 holding means 101 in each direction, the holding means 101A is located at both ends, the holding means 101C is located in the center, and the holding means 101B is located between the holding means 101A and the holding means 101C. Each side of the test sheet 200 is clamped by these holding means 101. Here, as shown in FIG5 , one side of the test sheet 200 is 210 mm. Furthermore, the interval between the retaining means 101 on each side is 40 mm. In addition, the interval between the end of one side of the test sheet 200 (the vertex of the sheet) and the retaining means 101A that exists on the side and is closest to the end is 25 mm. Next, a plurality of tension imparting means not shown corresponding to each retaining means 101 are driven to move the retaining means 101 independently. The four sides of the test sheet are fixed with a clamp, and the test sheet is expanded in the X-axis direction and the Y-axis direction at a speed of 5 mm/s and an expansion amount of 200 mm. Thereafter, the expanded state of the test sheet 200 is maintained by a ring frame. While maintaining the expanded state, the distance between each chip is measured with a digital microscope, and the average value of the distance between each chip is taken as the chip spacing. If the chip spacing is 1800μm or more, it is judged as qualified "A"; if the chip spacing is less than 1800μm, it is judged as unqualified "B". (Method for measuring chip neatness) Measure the deviation rate of the center line of the adjacent chip in the X-axis and Y-axis directions of the workpiece measuring the above-mentioned chip spacing. Figure 6 shows a schematic diagram of the specific measurement method. Select a row with 5 chips arranged along the X-axis direction, and use a digital microscope to measure the distance Dy between the top end of the chip and the bottom end of the chip in the row. The deviation rate in the Y-axis direction is calculated based on the following formula (number 3). Sy is the chip size in the Y-axis direction, which is set to 3mm in this embodiment. The deviation rate in the Y-axis direction [%] = [(Dy-Sy)/2]/Sy×100… (Number 3) For the other 4 rows with 5 chips arranged along the X-axis direction, the deviation rate in the Y-axis direction is calculated in the same way. Select a row with 5 chips arranged along the Y-axis direction, and use a digital microscope to measure the distance Dx between the leftmost end and the rightmost end of the chip in the row. The deviation rate in the X-axis direction is calculated based on the following formula (Number 4). Sx is the chip size in the X-axis direction, which is set to 3mm in this embodiment. The deviation rate in the X-axis direction [%] = [(Dx-Sx)/2]/Sx×100… (Number 4) For the other 4 rows with 5 chips arranged along the Y-axis direction, the deviation rate in the X-axis direction is calculated in the same way. The reason for dividing by 2 in equations (3) and (4) is to express the maximum distance that the chip after expansion is offset from the predetermined position as an absolute value. For all rows in the X-axis direction and the Y-axis direction (a total of 10 rows), the case where the offset rate is less than ±10% is judged as qualified "A"; if more than one row is more than ±10%, it is judged as unqualified "B". As a result of using the adhesive sheet expansion of Example 1, the spacing between multiple semiconductor chips CP can be expanded without breaking the adhesive sheet. Furthermore, the evaluation result of the chip spacing after expanding the adhesive sheet is qualified "A"; the evaluation result of the chip neatness is qualified "A".

3:密封體 3A:面 10:第1黏著片 11:第1基材 11a:第1基材表面 11b:第1基材背面 12:第1黏著劑層 20:第2薄片 21:第2基材 22:第2黏著劑層 100:擴展裝置 101:保持手段 101A:保持手段 101B:保持手段 101C:保持手段 200:試驗用薄片 300:密封構件 CP:半導體晶片 D1:間隔 Dx:距離 Dy:距離 Sx:晶片尺寸 Sy:晶片尺寸 T1:厚度 T2:切口深度 W:半導體晶圓 W1:電路面 W2:電路 W3:背面3: Sealing body 3A: Surface 10: First adhesive sheet 11: First substrate 11a: First substrate surface 11b: First substrate back 12: First adhesive layer 20: Second sheet 21: Second substrate 22: Second adhesive layer 100: Extension device 101: Holding means 101A: Holding means 101B: Holding means 101C: Holding means 200: Test sheet 300: Sealing member CP: Semiconductor chip D1: Interval Dx: Distance Dy: Distance Sx: Chip size Sy: Chip size T1: Thickness T2: Cut depth W: Semiconductor wafer W1: Circuit surface W2: Circuit W3: Back

[圖1A]為說明第1實施形態之製造方法的剖面圖。 [圖1B]為說明第1實施形態之製造方法的剖面圖。 [圖2]為說明第1實施形態之製造方法的剖面圖。 [圖3A]為說明第1實施形態之製造方法的剖面圖。 [圖3B]為說明第1實施形態之製造方法的剖面圖。 [圖4A]為說明第1實施形態之製造方法的剖面圖。 [圖4B]為說明第1實施形態之製造方法的剖面圖。 [圖5]為說明實施例中使用之雙軸延伸擴展裝置的俯視圖。 [圖6]為用來說明晶片整齊排列性之測定方法的示意圖。[FIG. 1A] is a cross-sectional view illustrating the manufacturing method of the first embodiment. [FIG. 1B] is a cross-sectional view illustrating the manufacturing method of the first embodiment. [FIG. 2] is a cross-sectional view illustrating the manufacturing method of the first embodiment. [FIG. 3A] is a cross-sectional view illustrating the manufacturing method of the first embodiment. [FIG. 3B] is a cross-sectional view illustrating the manufacturing method of the first embodiment. [FIG. 4A] is a cross-sectional view illustrating the manufacturing method of the first embodiment. [FIG. 4B] is a cross-sectional view illustrating the manufacturing method of the first embodiment. [FIG. 5] is a top view illustrating the biaxial extension device used in the embodiment. [FIG. 6] is a schematic diagram for illustrating a method for measuring the alignment of a chip.

10:第1黏著薄片 10: 1st adhesive sheet

11:第1基材 11: The first substrate

12:第1黏著劑層 12: 1st adhesive layer

CP:半導體晶片 CP: semiconductor chip

W1:電路面 W1: Electric road surface

W2:電路 W2: Circuit

W3:背面 W3: Back

Claims (11)

一種擴展方法，其係對具有第1晶圓面及前述第1晶圓面之相反側的第2晶圓面之晶圓的前述第2晶圓面黏貼具有第1黏著劑層及第1基材的第1黏著薄片，劃出深度50μm之切口的前述第1基材的拉伸伸度為300%以上，前述第1基材之材料為熱塑性彈性體或橡膠系材料，從前述第1晶圓面側劃出切口，將前述晶圓單片化成複數個晶片，進一步將前述第1黏著薄片之前述第1黏著劑層切斷，將前述第1黏著薄片拉伸，而擴大前述複數個晶片之間隔。 An expansion method is provided, wherein a first adhesive sheet having a first adhesive layer and a first substrate is attached to the second wafer surface of a wafer having a first wafer surface and a second wafer surface on the opposite side of the first wafer surface, the first substrate having a cut with a depth of 50 μm and a tensile elongation of 300% or more, the first substrate being made of a thermoplastic elastomer or a rubber material, a cut is made from the side of the first wafer surface, the wafer is singulated into a plurality of chips, the first adhesive layer of the first adhesive sheet is further cut, the first adhesive sheet is stretched, and the interval between the plurality of chips is expanded. 如請求項1之擴展方法，其中，前述切口係從前述第1晶圓面側以達到前述第1基材的深度而形成。 As in the expansion method of claim 1, the cut is formed from the side of the first wafer surface to a depth reaching the first substrate. 如請求項2之擴展方法，其中，前述第1基材的厚度為T1，劃入前述第1基材之前述切口的深度T2為0.2×T1以下。 As in the expansion method of claim 2, the thickness of the aforementioned first substrate is T1, and the depth T2 of the aforementioned cut cut into the aforementioned first substrate is less than 0.2×T1. 如請求項1之擴展方法，其中，前述第1基材之材料為前述熱塑性彈性體。 As in the expansion method of claim 1, the material of the aforementioned first substrate is the aforementioned thermoplastic elastomer. 如請求項1之擴展方法，其中，前述第1基材含有胺基甲酸酯系彈性體。 As in the expansion method of claim 1, wherein the first substrate contains a urethane elastomer. 如請求項1之擴展方法，其中， 前述第1黏著劑層含有能量線硬化性樹脂。 As in the expansion method of claim 1, wherein the first adhesive layer contains an energy ray-hardening resin. 如請求項6之擴展方法，其中，將前述第1黏著薄片拉伸，而擴大前述複數個晶片之間隔後，對前述第1黏著劑層照射能量線而使前述第1黏著劑層硬化。 As in claim 6, the expansion method, wherein the first adhesive sheet is stretched to expand the interval between the plurality of chips, and then the first adhesive layer is irradiated with energy rays to harden the first adhesive layer. 如請求項1之擴展方法，其中，前述第1黏著薄片為擴展薄片。 As in the expansion method of claim 1, wherein the first adhesive sheet is an expansion sheet. 如請求項1之擴展方法，其中，前述晶圓為半導體晶圓。 As in the expansion method of claim 1, wherein the aforementioned wafer is a semiconductor wafer. 如請求項1至9中任一項之擴展方法，其中，前述第1晶圓面具有電路。 An expansion method as in any one of claims 1 to 9, wherein the first wafer surface has a circuit. 一種半導體裝置之製造方法，其包含如請求項1至10中任一項之擴展方法。 A method for manufacturing a semiconductor device, comprising an extended method as described in any one of claims 1 to 10.
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CN113366079A (en) 2021-09-07
KR20210118080A (en) 2021-09-29
JPWO2020158770A1 (en) 2021-12-02
WO2020158770A1 (en) 2020-08-06

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