TWI835892B - 用於預清除及蝕刻設備之高溫塗層及相關方法 - Google Patents

用於預清除及蝕刻設備之高溫塗層及相關方法 Download PDF

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TWI835892B
TWI835892B TW108137620A TW108137620A TWI835892B TW I835892 B TWI835892 B TW I835892B TW 108137620 A TW108137620 A TW 108137620A TW 108137620 A TW108137620 A TW 108137620A TW I835892 B TWI835892 B TW I835892B
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Taiwan
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coating
layer
oxide
gas
thickness
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TW108137620A
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TW202020209A (zh
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高培培
林興
亞歷山德羅斯 迪摩斯
魏創
王文濤
馬明陽
普賴瓦爾 納加拉吉
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荷蘭商Ａｓｍ Ｉｐ私人控股有限公司
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    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/04—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material
    • C—CHEMISTRY; METALLURGY
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45536—Use of plasma, radiation or electromagnetic fields
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    • H01L21/67005—Apparatus not specifically provided for elsewhere
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    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C—CHEMISTRY; METALLURGY
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/403—Oxides of aluminium, magnesium or beryllium
    • C—CHEMISTRY; METALLURGY
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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    • C23C16/45529—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations specially adapted for making a layer stack of alternating different compositions or gradient compositions
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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Abstract

提出一種用於半導體膜預清潔及蝕刻設備之塗層及形成該塗層之方法。該塗層可用於其中難以使用傳統塗層或塗佈方法的環境中。塗層提供包括以下之優點：能夠有效地在一個設備中或個別地在兩個設備中將氫自由基及氟自由基遞送至晶圓表面處；覆蓋處於關鍵組件上之高縱橫比特徵；在超出150℃之高溫中可操作；及保護該塗層下方的具有高縱橫比特徵之部件，藉此防止在所處理之晶圓上出現金屬及粒子。

Description

用於預清除及蝕刻設備之高溫塗層及相關方法
本揭示案大體上係關於一種用於對半導體晶圓執行預清潔或蝕刻製程的設備及相關方法。更特定言之，本發明係關於經由原子層沉積(ALD)製程所形成用於該設備內之部件的塗層。塗層提供以下優點：能夠有效地在一個設備中或個別地在兩個設備中將由遠端電漿單元形成之氫自由基及氟自由基遞送至晶圓表面處，覆蓋處於關鍵組件上之高縱橫比特徵及在高溫條件下操作而表現出無金屬且無粒子。
塗層被使用在半導體膜製造設備內之部件上以便避免可能對半導體晶圓上形成之膜具有不利影響的粒子生成。此等塗層尤其出現於進行預清潔或蝕刻製程之設備上。舉例而言，塗層可包括金屬及陶瓷，諸如鎳、氧化鋁、氧化釔、氧化鋯、氧化鎂或氧化鈣。預清潔或蝕刻製程可涉及可能與塗層下方之部件反應的化學物質或電漿。因此，塗層充當保護性阻擋層用於部件。
然而，使用此等傳統塗層有一些問題。首先，氫自由基展示出在諸如鎳之一些塗層上極其快速重組，鎳常用作氟自由基環境中之保護性阻擋層。在此設備中不能達成碳移除功能，此係因為遞送至晶圓處之氫自由基的量有限。
第二，在一個設備中適應分別使用反應性F及H來進行之氧化物移除及碳移除兩者對於傳統塗層為巨大挑戰。在不同化學過程之間，氟、氫及塗層材料可能反應且生成粒子。可能需要季化(seasoning)步驟或虛設晶圓以限制此問題，但其導致低處理量。
第三，某些塗層可能不能承受其中溫度超出150oC 之環境。許多預清潔/蝕刻製程可能超出150oC 之溫度，因此可證明此等塗層因該等塗層在該等製程期間之物理及化學分解而不利於在彼等較高溫度下使用。舉例而言，電漿噴射Y2 O3 塗層在加熱至約150oC 時開裂，導致粒子生成。在具有陽極化PEO及ALD Al2 O3 塗層之晶圓上，在高於150oC 之反應性氟及反應性氫化學環境中出現鋁金屬問題。
第四，可能難以將塗層均勻地施用在具有高縱橫比特徵之部件上。舉例而言，經由電漿噴射製程施用之塗層可能不能覆蓋處於噴淋頭及氣體分配隧道上之高縱橫比孔洞。未經覆蓋之基板可能引起生成可能對半導體晶圓上形成之膜具有不利影響的粒子。
因此，在遞送反應性氟及反應性氫物種兩者之設備中需要能夠將氫自由基高效地遞送至晶圓處，同時承受較高溫度及嚴苛化學環境的異位或原位塗層。亦需要塗層以均勻厚度進行施用且當經受較高溫度及嚴苛化學環境時不生成金屬/粒子。
提供本發明內容來以簡化形式來介紹一系列之概念。此等概念會在下文本發明示例具體例之詳細描述中進行進一步詳述。本發明內容沒有意欲要確認所主張之標的的關鍵特徵或必要特徵，亦沒有意欲用來限制所主張之標的的範圍。
根據至少一個具體例，半導體膜預清潔/蝕刻設備包含：反應腔室；處於該反應腔室內之晶圓固持器，該晶圓固持器經配置以固持半導體晶圓；氣體輸送路徑，該氣體輸送路徑經配置以確保進入該反應腔室之氣體遞送及至少兩種氣體之均勻混合；氣體分配裝置，該氣體分配裝置用於在整個該半導體晶圓上分散氣體；氣體歧管，該氣體歧管用以幫助將氫自由基遞送至晶圓邊緣處；遠端電漿單元，該遠端電漿單元將由第一氣體源提供之第一氣體轉化為自由基氣體；其中該晶圓固持器、該反應腔室、該氣體輸送路徑、該氣體分配裝置、該氣體歧管或該遠端電漿單元中之至少一者包含具有第一層及第二層之塗層；其中該塗層之該第一層或該第二層中的至少一者係藉由原子層沉積(ALD)形成；且其中該第一層及該第二層包含不同材料。
根據至少一個具體例，一種用於半導體膜預清潔/蝕刻設備之塗層的形成方法包含：準備待塗佈之第一表面；清潔該第一表面；用原子層沉積(ALD)技術將第一塗層沉積在該第一表面上；將第二塗層沉積在該第一塗層上以形成多層塗層；視需要重複形成該第一塗層及形成該第二塗層之步驟；及在複合塗層上執行塗佈後處理；其中該第一塗層包含與該第二塗層之材料不同的材料；其中該半導體膜沉積設備包含：晶圓固持器；反應腔室；氣體輸送路徑；氣體分配裝置；氣體歧管；及遠端電漿單元；且其中該複合塗層安置於以下中之至少一者上：該晶圓固持器；該反應腔室；該氣體輸送路徑；該氣體分配裝置；該氣體歧管；及該遠端電漿單元。
雖然在下文中揭示特定具體例及實例，但是熟悉本技藝者可理解，本發明延伸超出本發明所具體揭示之具體例及/或用途及其明顯修改及其等效物。因此，其目的在於所揭示之本發明的範疇不應受下文所描述的特定揭示之具體例的限制。
本文呈現之圖解說明並非意謂任何特定材料、結構或裝置的實際視圖，而僅為用於描述本揭示案之具體例的理想表示。
如本文所使用，術語「原子層沉積(ALD)」可指在製程腔室中進行沉積循環(較佳地，複數個連續沉積循環)的氣相沉積製程。通常，在每個循環期間，前驅物被化學吸附至沉積表面(例如，基板表面或例如來自前一個ALD循環之材料的先前所沉積之底層表面)，從而形成不容易與其它前驅物反應之單層或次單層(亦即，自限性反應(self-limiting reaction))。之後，若需要，則可隨後將反應物(例如，另一種前驅物或反應氣體)引入至製程腔室中，以用於在沉積表面上將經化學吸附之前驅物轉化為所要材料。通常，此反應物能夠進一步與前驅物反應。此外，亦可在每個循環期間利用沖洗步驟，自製程腔室移除過量前驅物，及/或在轉化經化學吸附之前驅物之後，自製程腔室移除過量反應物及/或反應副產物。此外，當用前驅物組合物、反應氣體及沖洗(例如，惰性載體)氣體之交替脈衝執行時，如本文所使用之術語「原子層沉積」亦意謂包括由相關術語所表示之製程，例如，「化學氣相原子層沉積」、「原子層磊晶(ALE)」、分子束磊晶(MBE)、氣體源MBE或有機金屬MBE及化學束磊晶。
如本文所使用，術語「化學氣相沉積(CVD)」可指其中基板依序暴露於一種或多種揮發性前驅物中之任何製程，該等前驅物可在基板上反應及/或分解以產生所需沉積物。
圖1圖解說明根據本發明之至少一個具體例的具有異位塗層之半導體膜預清潔設備100。半導體膜預清潔設備100包含：反應腔室殼體110；晶圓固持器或基座120，該晶圓固持器或基座經配置以固持半導體晶圓130；氣體分配系統或噴淋頭140；氣體歧管150；氣體輸送路徑160；遠端電漿單元170；第一氣體源180；第二氣體源190A；第三氣體源190B；及第四氣體源190C。
遠端電漿單元170將由第一氣體源180提供之氣體轉化為自由基氣體。自由基氣體之實例可包括用於自半導體晶圓130移除膜之氟自由基氣體，該膜諸如矽氧化物(SiOx )或矽鍺氧化物(SiGeOx )。第二氣體源190A可將稀釋氣體或反應物氣體與來自第一氣體源180之氣體一起提供至半導體晶圓130處以便移除膜，諸如矽氧化物或矽鍺氧化物。第三氣體源190B可提供由遠端電漿單元170活化之氣體以在碳移除製程期間形成氫自由基氣體。第四氣體源190C可提供惰性氣體以幫助點燃遠端電漿單元170，且可亦將自由基遞送至晶圓130處。氣體輸送路徑160確保待遞送至反應腔室110處的來自第一氣體源180及第二氣體源190A之氣體均勻混合。氣體分配系統或噴淋頭140將氣體均勻分配在半導體晶圓130之表面上。氣體歧管150可有助於將由第三氣體源190B生成之自由基氣體高效地遞送至晶圓邊緣處且改良碳移除均勻性。
圖2圖解說明根據本發明之具體例的具有原位塗層之半導體膜預清潔設備200。半導體膜預清潔設備200包含：反應腔室殼體110；晶圓固持器或基座120，該晶圓固持器或基座經配置以固持半導體晶圓130；氣體分配系統或噴淋頭140；氣體歧管150；氣體輸送路徑160；遠端電漿單元170；第一氣體源180；第二氣體源190A；第三氣體源190B；第四氣體源190C；多個前驅物源195A-195D；及第五氣體源195E。
類似於異位塗層裝置100，原位塗層裝置200亦可添加前驅物及沖洗氣體源以允許原位塗佈功能。以具有ALD沉積之氧化鋁(Al2 O3 )及ALD沉積之氧化釔(Y2 O3 )的複合塗層或雙層塗層為例，原位塗層裝置200可包括用於原位ALD沉積之氧化鋁塗層的三甲基鋁(TMA)源195A及水(H2 O)源195B。原位塗層裝置200可包括用於原位ALD沉積之氧化釔的釔氣體源195C (諸如Y(thd)、CP3 Y或(CpCH3 )3 Y)及氧氣源195D (諸如氧氣、臭氧、臭氧及氧氣之混合物、或H2 O) (如美國專利第7,351,658號中所描述，其以引用之方式併入本文中)。此外，沖洗氣體源195E可與前體氣體源(195A-195D)之上游連接以在轉化經化學吸附之前驅物之後移除過量前驅物或前驅物副產物。
若干類型之部件結構可受益於該塗佈方法。一種類型之結構為具有封閉空間之部件，諸如遠端電漿單元，其中最初生成自由基氣體。遠程電漿單元可能需要塗層，此係因為電漿轟擊及腐蝕性化學環境。然而，常見塗佈方法展示出問題或不可行。舉例而言，在常見RPU塗層，諸如陽極化及PEO塗層上生成之粒子可在碳移除與氧化物移除製程之間轉變。電漿噴射因所封閉空間及較小氣體入口/出口而不能塗佈。圖3A及3B圖解說明代表性遠端電漿單元300。遠端電漿單元300包含主體310、氣體入口320、RF生成器330、氣體出口340及塗層350。塗層350覆蓋主體310之內壁。遠端電漿單元300之其他部分可由塗層350覆蓋。塗層350可包含陶瓷塗層，諸如氧化鋁(Al2 O3 )、氧化釔(Y2 O3 )、氟化釔(YF3 )、釔氟氧化物(YOx Fy )、氟化鋁(AlF3 )、氧化鈧(Sc2 O3 )、氧化鉿(HfO2 )、氧化鑭(La2 O3 )、氧化釤(Sm2 O3 )、氧化釓(Gd2 O3 )、氧化鉺(Er2 O3 )、氧化鋯(ZrO2 )、氧化鈰(CeO2 )，或上文之任何組合。
氣體分配系統或噴淋頭140、氣體遞送路徑135及氣體歧管190為亦可經塗佈之部件，此係由於此類部件暴露於由遠端電漿單元160產生之自由基氣體中。圖4A圖解說明根據本發明之至少一個具體例的另一類型的具有高縱橫比孔洞之部件，諸如氣體分配系統或噴淋頭140。氣體分配系統或噴淋頭140包含噴淋頭體410及複數個孔洞420。氣體通過複數個孔洞420流動至半導體晶圓130上。複數個孔洞420可包含具有高縱橫比之特徵，且可亦包含不同形狀，諸如斜面及曲面。該等特徵可提供較大區域表面，在該等表面上，粒子可由噴淋頭體410整體產生。
圖4B圖解說明併有防止形成粒子之塗層的氣體分配系統或噴淋頭140。將複數個塗層430施用於複數個孔洞420處。複數個塗層430可包含陶瓷塗層，諸如氧化鋁(Al2 O3 )、氧化釔(Y2 O3 )、釔氧氟化物(YOx Fy )、氟化釔(YF3 )、氟化鋁(AlF3 )、氧化鈧(Sc2 O3 )、氧化鉿(HfO2 )、氧化鑭(La2 O3 )、氧化釤(Sm2 O3 )、氧化釓(Gd2 O3 )、氧化鉺(Er2 O3 )、氧化鋯(ZrO2 )、氧化鈰(CeO2 )，或上文之任何組合。複數個塗層430亦可覆蓋噴淋頭體410之其他部分。雖然圖4A及4B圖解說明部件之塗層的一種幾何形狀，但亦可施用塗層之內部結構仍可能更複雜。此可包括氣體輸送路徑135及氣體歧管150，其可具有處於幾何形狀內之孔洞及彎曲。
部件之塗層可較佳為複合塗層。圖5圖解說明一種塗層佈置500。塗層佈置500包括待塗佈之部件510。部件510可由包含以下中之至少一者的材料製成：鋁合金、鑄鐵、不鏽鋼、赫史特合金(Hastelloy)、英高鎳(Inconel)、鎳合金、陶瓷、陶瓷塗層或金屬塗層。部件510塗佈有一層第一塗層520，繼而為一層第二塗層530，且重複一層該第一塗層520及一層該第二塗層530。第一塗層520或第二塗層530中之至少一者或兩者可經由原子層沉積(ALD)技術來進行施用。使用ALD技術之益處包括形成完全緻密塗層，同時生成各向同性微觀結構。在僅一個塗層藉由ALD來得到之情況下，另一塗層可藉由陽極化、化學氣相沉積(CVD)、電漿氣相沉積(PVD)、電漿噴射塗佈或電漿電解氧化(PEO)來得到。層之重複可視需要或所需來進行。
第一塗層520可包含以下中之一者：氧化鋁(Al2 O3 )、氧化釔(Y2 O3 )、氟化釔(YF3 )、釔氧氟化物(YOx Fy )、氟化鋁(AlF3 )、氧化鈧(Sc2 O3 )、氧化鉿(HfO2 )、氧化鑭(La2 O3 )、氧化釤(Sm2 O3 )、氧化釓(Gd2 O3 )、氧化鉺(Er2 O3 )、氧化鋯(ZrO2 )或氧化鈰(CeO2 )。第二塗層530可包含以下中之一者：氧化鋁(Al2 O3 )、氧化釔(Y2 O3 )、氟化釔(YF3 )、釔氧氟化物(YOx Fy )、氟化鋁(AlF3 )、氧化鈧(Sc2 O3 )、氧化鉿(HfO2 )、氧化鑭(La2 O3 )、氧化釤(Sm2 O3 )、氧化釓(Gd2 O3 )、氧化鉺(Er2 O3 )、氧化鋯(ZrO2 )或氧化鈰(CeO2 )。第一塗層420及第二塗層530在理想情況下不包含相同材料。
圖6圖解說明根據本發明之至少一個具體例的塗層佈置600。塗層佈置600包括待塗佈之部件610。部件610可由包含以下中之至少一者的材料製成：鋁合金、鑄鐵、不鏽鋼、赫史特合金、英高鎳、鎳合金、陶瓷、陶瓷塗層或金屬塗層。部件610塗佈有一層第一塗層620，繼而為一層第二塗層630。第一塗層620或第二塗層630中之至少一者或兩者可經由原子層沉積(ALD)技術來進行施用。在僅一個塗層藉由ALD來得到之情況下，另一塗層可藉由陽極化、化學氣相沉積(CVD)、電漿氣相沉積(PVD)、電漿噴射塗佈或電漿電解氧化(PEO)來得到。塗層可擴展至超過兩層不同ALD塗層(諸如氧化釔及氧化鋁)或可包含僅一層塗層(諸如氧化釔)。層之重複可視需要或所需來進行。
第一塗層620可包含以下中之一者：氧化鋁(Al2 O3 )、氧化釔(Y2 O3 )、氟化釔(YF3 )、釔氧氟化物(YOx Fy )、氟化鋁(AlF3 )、氧化鈧(Sc2 O3 )、氧化鉿(HfO2 )、氧化鑭(La2 O3 )、氧化釤(Sm2 O3 )、氧化釓(Gd2 O3 )、氧化鉺(Er2 O3 )、氧化鋯(ZrO2 )或氧化鈰(CeO2 )。第二塗層630可包含以下中之一者：氧化鋁(Al2 O3 )、氧化釔(Y2 O3 )、釔氧氟化物(YOx Fy )、氟化釔(YF3 )、氟化鋁(AlF3 )、氧化鈧(Sc2 O3 )、氧化鉿(HfO2 )、氧化鑭(La2 O3 )、氧化釤(Sm2 O3 )、氧化釓(Gd2 O3 )、氧化鉺(Er2 O3 )、氧化鋯(ZrO2 )或氧化鈰(CeO2 )。第一塗層620及第二塗層630在理想情況下不包含相同材料。
圖7圖解說明根據本發明之至少一個具體例的塗層佈置700。塗層佈置700包括待塗佈之部件710。部件710可由包含以下中之至少一者的材料製成：鋁合金、鑄鐵、不鏽鋼、赫史特合金、英高鎳、鎳合金、陶瓷、陶瓷塗層或金屬塗層。部件710塗佈有一層第一塗層720，繼而為一層第二塗層730及一層第三塗層740。第一塗層720、第二塗層730及第三塗層740中之至少一者或全部可經由原子層沉積(ALD)技術來進行施用。在僅一個塗層藉由ALD來得到之情況下，另一塗層可藉由陽極化、化學氣相沉積(CVD)、電漿氣相沉積(PVD)、電漿噴射塗佈或電漿電解氧化(PEO)來得到。塗層可擴展至超過兩層不同ALD塗層或可包含僅一層塗層。層之重複可視所需來進行。
第一塗層720可包含以下中之一者：氧化鋁(Al2 O3 )、氧化釔(Y2 O3 )、氟化釔(YF3 )、釔氧氟化物(YOx Fy )、氟化鋁(AlF3 )、氧化鈧(Sc2 O3 )、氧化鉿(HfO2 )、氧化鑭(La2 O3 )、氧化釤(Sm2 O3 )、氧化釓(Gd2 O3 )、氧化鉺(Er2 O3 )、氧化鋯(ZrO2 )或氧化鈰(CeO2 )。第二塗層730可包含以下中之一者：氧化鋁(Al2 O3 )、氧化釔(Y2 O3 )、釔氧氟化物(YOx Fy )、氟化釔(YF3 )、氟化鋁(AlF3 )、氧化鈧(Sc2 O3 )、氧化鉿(HfO2 )、氧化鑭(La2 O3 )、氧化釤(Sm2 O3 )、氧化釓(Gd2 O3 )、氧化鉺(Er2 O3 )、氧化鋯(ZrO2 )或氧化鈰(CeO2 )。第三塗層740可包含以下中之一者：氧化鋁(Al2 O3 )、氧化釔(Y2 O3 )、釔氧氟化物(YOx Fy )、氟化釔(YF3 )、氟化鋁(AlF3 )、氧化鈧(Sc2 O3 )、氧化鉿(HfO2 )、氧化鑭(La2 O3 )、氧化釤(Sm2 O3 )、氧化釓(Gd2 O3 )、氧化鉺(Er2 O3 )、氧化鋯(ZrO2 )或氧化鈰(CeO2 )。第一塗層720、第二塗層730及第三塗層740在理想情況下不包含相同材料，諸如氧化釔、氧化鉿及氧化鋁。
對部件之塗佈可需要若干步驟。圖8圖解說明一種用於執行塗佈之方法800。該方法800包含：表面準備步驟810；清潔步驟820；塗佈步驟830；及塗佈後處理步驟840。基板準備步驟810可包括確保最佳化之塗佈的步驟，包括移除可能在塗層上引起應力之銳邊、收緊間隙上之公差及使較小孔洞設計最佳化以便減少在ALD塗佈期間由所捕獲之前驅物造成的局部不均勻塗層缺陷或牛頓環。為了增加塗層黏附且確保良好塗層品質，部件可藉由紋理化、拋光及/或電解拋光來進行處理。
清潔步驟820可視待塗佈之部件而定。清潔步驟820可自部件移除表面碳、粒子及過量金屬。清潔步驟820可尤其包括鹼處理、酸處理、電清潔處理及/或臭氧處理步驟。藉由執行清潔步驟820，可使塗層之均勻性及表面覆蓋率最佳化。
塗佈步驟830可包含藉由ALD技術形成至少一個塗層。ALD技術可藉由原位或異位方法來進行。例示性方法可為經由ALD方法形成第一層氧化鋁及第二層氧化釔(如美國專利第7,351,658號中所描述，其以引用之方式併入本文中)。氣體分配裝置或噴淋頭上的氧化鋁之厚度可在以下之間的範圍：1-10,000 nm；10-2,500 nm；或100-500 nm。若將氧化釔沉積為用於氣體分配裝置或噴淋頭之塗層，則氧化釔之厚度可在以下之間的範圍：1-10,000 nm；10-2,500 nm；或100-500 nm。遠端電漿單元上的氧化鋁之厚度可在以下之間的範圍：1-50,000 nm；10-25,000 nm；或100-10,000 nm。若將氧化釔沉積在遠端電漿單元上，則氧化釔之厚度可在以下之間的範圍：1-50,000 nm；10-25,000 nm；或100-10,000 nm。
以上文所描述之方式形成的塗層可可靠地用於在高於150oC 之溫度下運行的製程。另外，與氧化釔相比，氧化鋁層可在待塗佈之部件上達成更好的塗層品質。隨後，氧化鋁層可減小由熱膨脹在氧化釔層中產生之應力，藉此降低在氧化釔中開裂之可能性。氧化鋁層亦可高效阻礙金屬遷移至表面，該等金屬諸如鎂及鈉。
塗佈後處理步驟840可包含改良塗層之品質或特性。實例可包括對塗層之表面進行氟化或氯化以更好地適應具有氟或氯之環境。另外，塗佈後處理步驟840可涉及對表面進行退火以移除內應力及缺陷。此外，藉由加熱至某一溫度，可獲得二元或三元陶瓷。舉例而言，Al2 O3 及Y2 O3 之複合塗層在特定的Al2 O3 與Y2 O3 之比率下，可在高溫處理之後轉變為釔鋁石榴石(yttrium aluminum garnet，YAG)或單斜釔鋁(yttrium aluminum monoclinic，YAM)。
所展示及描述之特定實施方案為對本發明及其最佳模式之說明，且並不意欲以任何方式另外限制態樣及實施方案之範疇。實際上，為簡潔起見，系統之習知製造、連接、製備及其他功能性態樣可不加以詳細描述。此外，各種圖中展示之連接線意欲表示各種元件之間的例示性功能性關係及/或實體耦接。許多替代或附加功能關係或實體連接可存在於實際系統中及/或在一些具體例中可不存在。
應理解，本文中所描述之配置及/或方法本質上為例示性的，且此等特定具體例或實例不視為具有限制意義，原因在於可能存在諸多變化。本文中所描述之特定程序或方法可表示任何數目之處理程序策略中的一或多者。因此，所說明之各種動作可於所說明之順序執行，以其他順序執行，或在一些情況下被省略。
本揭示案之標的物包括本文中所揭示之各種製程、系統及配置，以及其他特徵、功能、動作及/或特性，以及其任何和所有等效物的所有新穎但非顯而易見之組合及子組合。
100:具有異位塗層之半導體膜預清潔設備 110:反應腔室殼體 120:晶圓固持器/基座 130:半導體晶圓 140:氣體分配系統/噴淋頭 150:氣體歧管 160:氣體輸送路徑 170:遠端電漿單元 180:第一氣體源 190A:第二氣體源 190B:第三氣體源 190C:第四氣體源 195A:前驅物源/三甲基鋁源 195B:前驅物源/水源 195C:前驅物源/釔氣體源 195D:前驅物源/氧氣源 195E:第五氣體源/沖洗氣體源 200:具有原位塗層之半導體膜預清潔設備 310:主體 320:氣體入口 330:RF生成器 340:氣體出口 350:塗層 410:噴淋頭體 420:孔洞 430:塗層 500:塗層佈置 510:待塗佈之部件 520:第一塗層 530:第二塗層 600:塗層佈置 610:待塗佈之部件 620:第一塗層 630:第二塗層 700:塗層佈置 710:待塗佈之部件 720:第一塗層 730:第二塗層 740:第三塗層 800:方法 810:表面準備步驟 820:清潔步驟 830:塗佈步驟 840:塗佈後處理步驟
本文所揭示的本發明之此等及其他特徵、態樣及優點在下文參考某些具體例之圖式來描述，該等具體例意欲說明而不限制本發明。
圖1為根據本發明之至少一個具體例的具有異位塗層之半導體膜預清潔設備的橫截面圖解說明。
圖2為根據本發明之至少一個具體例的具有原位塗層之半導體膜預清潔設備的橫截面圖解說明。
圖3A及3B為根據本發明之至少一個具體例的具有封閉空間(enclosure space)之部件，即遠端電漿單元之實例的橫截面圖解說明。
圖4A及4B為根據本發明之至少一個具體例的具有高縱橫比特徵之部件，即氣體分配系統或噴淋頭的橫截面圖解說明。
圖5為根據本發明之至少一個具體例的具有一定塗層佈置之部件的橫截面圖解說明。
圖6為根據本發明之至少一個具體例的具有一定塗層佈置之部件的橫截面圖解說明。
圖7為根據本發明之至少一個具體例的具有一定塗層佈置之部件的橫截面圖解說明。
圖8為圖解說明根據本發明之至少一個具體例進行塗佈之方法的流程圖。
應瞭解，附圖中之元件係為了簡單及清楚起見而進行圖解說明且未必按比例繪製。舉例而言，附圖中一些元件之尺寸可相對於其他元件而放大，以幫助提昇對本揭示案所說明之具體例的理解。
100:具有異位塗層之半導體膜預清潔設備
110:反應腔室殼體
120:晶圓固持器/基座
130:半導體晶圓
140:氣體分配系統/噴淋頭
150:氣體歧管
160:氣體輸送路徑
170:遠端電漿單元
180:第一氣體源
190A:第二氣體源
190B:第三氣體源
190C:第四氣體源

Claims (35)

  1. 一種半導體膜預清潔/蝕刻設備，其包含：一反應腔室；處於該反應腔室內之一晶圓固持器，該晶圓固持器經配置以固持一半導體晶圓；一氣體輸送路徑，該氣體輸送路徑經配置以確保進入該反應腔室之氣體遞送及至少兩種氣體之均勻混合；一氣體分配裝置，該氣體分配裝置用於在整個該半導體晶圓上分散氣體；一氣體歧管，該氣體歧管用以幫助將氫自由基遞送至晶圓邊緣處；及一遠端電漿單元，該遠端電漿單元將由一第一氣體源提供之一第一氣體轉化為一自由基氣體；其中該晶圓固持器、該反應腔室、該氣體輸送路徑、該氣體分配裝置、該氣體歧管或該遠端電漿單元中之至少一者包含具有一第一層及一第二層之一塗層；其中該塗層之該第一層或該第二層中的至少一者係藉由原子層沉積(ALD)形成；且其中該第一層及第二層包含不同材料。
  2. 如請求項1之設備，其中，該第一層處於該氣體分配裝置上，且該第一層之厚度在以下之間的範圍：1-10,000nm。
  3. 如請求項1之設備，其中，該第一層處於該氣體分配裝置上，且該第一層之厚度在以下之間的範圍：10-2,500nm。
  4. 如請求項1之設備，其中，該第一層處於該氣體分配裝置上，且該第一層之厚度在以下之間的範圍：100-500nm。
  5. 如請求項1之設備，其中，該第二層處於該氣體分配裝置上，且 該第二層之厚度在以下之間的範圍：1-10,000nm。
  6. 如請求項1之設備，其中，該第二層處於該氣體分配裝置上，且該第二層之厚度在以下之間的範圍：10-2,500nm。
  7. 如請求項1之設備，其中，該第二層處於該氣體分配裝置上，且該第二層之厚度在以下之間的範圍：100-500nm。
  8. 如請求項1之設備，其中，該第一層處於該遠端電漿單元上，且該第一層之厚度在以下之間的範圍：1-50,000nm。
  9. 如請求項1之設備，其中，該第一層處於該遠端電漿單元上，且該第一層之厚度在以下之間的範圍：10-25,000nm。
  10. 如請求項1之設備，其中，該第一層處於該遠端電漿單元上，且該第一層之厚度在以下之間的範圍：100-10,000nm。
  11. 如請求項1之設備，其中，該第二層處於該遠端電漿單元上，且該第二層之厚度在以下之間的範圍：1-50,000nm。
  12. 如請求項1之設備，其中，該第二層處於該遠端電漿單元上，且該第二層之厚度在以下之間的範圍：10-25,000nm。
  13. 如請求項1之設備，其中，該第二層處於該遠端電漿單元上，且該第二層之厚度在以下之間的範圍：100-10,000nm。
  14. 如請求項1之設備，其中，該第一層包含以下中之至少一者：氧化鋁(Al2O3)、氧化釔(Y2O3)、氟化釔(YF3)、釔氧氟化物(YOxFy)、氟化鋁(AlF3)、氧化鈧(Sc2O3)、氧化鉿(HfO2)、氧化鑭(La2O3)、氧化釤(Sm2O3)、氧化釓(Gd2O3)、氧化鉺(Er2O3)、氧化鋯(ZrO2)或氧化鈰(CeO2)。
  15. 如請求項1之設備，其中，該第二層包含以下中之至少一者：氧化鋁(Al2O3)、氧化釔(Y2O3)、氟化釔(YF3)、釔氧氟化物(YOxFy)、氟化鋁(AlF3)、氧化鈧(Sc2O3)、氧化鉿(HfO2)、氧化鑭(La2O3)、氧化釤(Sm2O3)、氧化釓(Gd2O3)、 氧化鉺(Er2O3)、氧化鋯(ZrO2)或氧化鈰(CeO2)。
  16. 如請求項1之設備，其中，該第一層及該第二層兩者係藉由ALD形成。
  17. 如請求項1之設備，其中，該第一層係藉由ALD形成，且該第二層係藉由以下中之至少一者形成：陽極化、化學氣相沉積(CVD)、電漿氣相沉積(PVD)、電漿噴射塗佈或電漿電解氧化(PEO)。
  18. 如請求項1之設備，其中，該第一層及該第二層在以下中之至少一者上形成複合塗層：該晶圓固持器、該反應腔室、該氣體輸送路徑、該氣體分配裝置、該氣體歧管或該遠端電漿單元。
  19. 如請求項18之設備，其中，該複合塗層之形成在以下中之至少一者上重複若干次：該晶圓固持器、該反應腔室、該氣體輸送路徑、該氣體分配裝置、該氣體歧管或該遠端電漿單元。
  20. 一種用於半導體膜預清潔/蝕刻設備之塗層的形成方法，其包含：準備待塗佈之一第一表面；清潔該第一表面；用原子層沉積(ALD)技術將一第一塗層沉積在該第一表面上；將一第二塗層沉積在該第一塗層上以形成一多層塗層；重複該形成該第一塗層及形成該第二塗層之步驟；及在複合塗層上執行塗佈後處理；其中該第一塗層包含與該第二塗層之材料不同的材料；其中該半導體膜沉積設備包含：一晶圓固持器；一反應腔室；一氣體輸送路徑；一氣體分配裝置；一氣體歧管；及一遠端電漿單元；且其中該複合塗層安置於以下中之至少一者上：該晶圓固持器；該反應腔室；該氣體輸送路徑；該氣體分配裝置；該氣體歧管；或該遠端電漿單元。
  21. 如請求項20之方法，其中，沉積該第二層藉由以下中之至少一者來執行：陽極化、化學氣相沉積(CVD)、電漿氣相沉積(PVD)、電漿噴射塗佈或電漿電解氧化(PEO)。
  22. 如請求項20之方法，其中，該第一塗層包含以下中之至少一者：氧化鋁(Al2O3)、氧化釔(Y2O3)、氟化釔(YF3)、釔氧氟化物(YOxFy)、氟化鋁(AlF3)、氧化鈧(Sc2O3)、氧化鉿(HfO2)、氧化鑭(La2O3)、氧化釤(Sm2O3)、氧化釓(Gd2O3)、氧化鉺(Er2O3)、氧化鋯(ZrO2)或氧化鈰(CeO2)。
  23. 如請求項20之方法，其中，該第二塗層包含以下中之至少一者：氧化鋁(Al2O3)、氧化釔(Y2O3)、氟化釔(YF3)、釔氧氟化物(YOxFy)、氟化鋁(AlF3)、氧化鈧(Sc2O3)、氧化鉿(HfO2)、氧化鑭(La2O3)、氧化釤(Sm2O3)、氧化釓(Gd2O3)、氧化鉺(Er2O3)、氧化鋯(ZrO2)或氧化鈰(CeO2)。
  24. 如請求項20之方法，其中，該第一塗層處於該氣體分配裝置上，且該第一塗層之厚度在以下之間的範圍：1-10,000nm。
  25. 如請求項20之方法，其中，該第一塗層處於該氣體分配裝置上，且該第一塗層之厚度在以下之間的範圍：10-2,500nm。
  26. 如請求項20之方法，其中，該第一塗層處於該氣體分配裝置上，且該第一塗層之厚度在以下之間的範圍：100-500nm。
  27. 如請求項20之方法，其中，該第二塗層處於該氣體分配裝置上，且該第二塗層之厚度在以下之間的範圍：1-10,000nm。
  28. 如請求項10之方法，其中，該第二塗層處於該氣體分配裝置上，且該第二塗層之厚度在以下之間的範圍：10-2,500nm。
  29. 如請求項10之方法，其中，該第二塗層處於該氣體分配裝置上，且該第二塗層之厚度在以下之間的範圍：100-500nm。
  30. 如請求項20之方法，其中，該第一塗層處於該遠端電漿單元上， 且該第一塗層之厚度在以下之間的範圍：1-50,000nm。
  31. 如請求項20之方法，其中，該第一塗層處於該遠端電漿單元上，且該第一塗層之厚度在以下之間的範圍：10-25,000nm。
  32. 如請求項20之方法，其中，該第一塗層處於該遠端電漿單元上，且該第一塗層之厚度在以下之間的範圍：100-10,000nm。
  33. 如請求項20之方法，其中，該第二塗層處於該遠端電漿單元上，且該第二塗層之厚度在以下之間的範圍：1-50,000nm。
  34. 如請求項20之方法，其中，該第二塗層處於該遠端電漿單元上，且該第二塗層之厚度在以下之間的範圍：10-25,000nm。
  35. 如請求項20之方法，其中，該第二塗層處於該遠端電漿單元上，且該第二塗層之厚度在以下之間的範圍：100-10,000nm。
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