TWI834888B - 封裝基板 - Google Patents
封裝基板 Download PDFInfo
- Publication number
- TWI834888B TWI834888B TW109121584A TW109121584A TWI834888B TW I834888 B TWI834888 B TW I834888B TW 109121584 A TW109121584 A TW 109121584A TW 109121584 A TW109121584 A TW 109121584A TW I834888 B TWI834888 B TW I834888B
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- Taiwan
- Prior art keywords
- layer
- conductive
- molding layer
- molding
- packaging substrate
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 68
- 238000000465 moulding Methods 0.000 claims abstract description 97
- 238000004806 packaging method and process Methods 0.000 claims description 59
- 238000005530 etching Methods 0.000 claims description 16
- 229910000679 solder Inorganic materials 0.000 claims description 12
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 abstract description 22
- 238000004519 manufacturing process Methods 0.000 abstract description 13
- 239000010410 layer Substances 0.000 description 249
- 229920001299 polypropylene fumarate Polymers 0.000 description 21
- 238000000034 method Methods 0.000 description 19
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 18
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 18
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 16
- 229910052802 copper Inorganic materials 0.000 description 16
- 239000010949 copper Substances 0.000 description 16
- 239000000463 material Substances 0.000 description 14
- 239000010931 gold Substances 0.000 description 12
- 238000009713 electroplating Methods 0.000 description 8
- 239000000945 filler Substances 0.000 description 8
- 239000004020 conductor Substances 0.000 description 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 6
- 229910052737 gold Inorganic materials 0.000 description 6
- 229910052759 nickel Inorganic materials 0.000 description 6
- 229910052763 palladium Inorganic materials 0.000 description 6
- 239000011229 interlayer Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000003822 epoxy resin Substances 0.000 description 4
- 239000004033 plastic Substances 0.000 description 4
- 229920000647 polyepoxide Polymers 0.000 description 4
- 238000000926 separation method Methods 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 238000007772 electroless plating Methods 0.000 description 3
- 239000012778 molding material Substances 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 230000032798 delamination Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 239000013067 intermediate product Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- 235000002017 Zea mays subsp mays Nutrition 0.000 description 1
- 241000482268 Zea mays subsp. mays Species 0.000 description 1
- 239000008393 encapsulating agent Substances 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
Classifications
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- H01L21/4853—Connection or disconnection of other leads to or from a metallisation, e.g. pins, wires, bumps
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Abstract
提供一種封裝基板及一種製造一封裝基板及一半導體裝置封裝之方法。該封裝基板包括一電路層、一模製層及一犧牲層。該電路層包括導電跡線及導電襯墊。該模製層具有一上表面及與該上表面相對之一下表面,其中該模製層部分地覆蓋該等導電跡線及該等導電襯墊,且該等導電跡線之第一表面及該等導電襯墊的第一表面自該模製層的該上表面暴露。該犧牲層覆蓋該模製層之該下表面、該等導電襯墊之第二表面。
Description
本發明係關於一種封裝基板及其製造方法,且更特定地係關於一種具有薄的厚度及足夠的結構強度之封裝基板及其製造方法。
由於緊湊的大小及高效能已成為對消費型電子及通信產品的典型要求,因此半導體裝置封裝經預期具有優良的電性質、薄的總厚度及大量I/O埠。為了提供足夠的結構強度來支撐半導體晶粒及形成於其上之電子組件,封裝基板需要足夠厚。通常,封裝基板之厚度需要超過100微米以提供足夠的結構強度。然而,封裝基板之厚發厚度增加了半導體裝置封裝之總厚度。
因此,需要研發一種具有薄的厚度但具有足夠的結構強度之封裝基板,以滿足對消費型電子及通信產品之緊湊性要求。
本發明之一個態樣係關於一種封裝基板。在一些實施例中,該封裝基板包括一電路層、一模製層及一犧牲層。該電路層包括導電跡線及導電襯墊。該模製層具有一上表面及與該上表面相對之一下表面,其中該模製層部分地覆蓋該等導電跡線及該等導電襯墊,且該等導電跡線
之第一表面及該等導電襯墊的第一表面自該模製層的該上表面暴露。該犧牲層覆蓋該模製層之該下表面、該等導電襯墊之第二表面。
本發明之另一態樣係關於一種製造一封裝基板的方法。在一些實施例中,該方法包括以下操作。形成一電路層,其中該電路包括導電跡線及導電襯墊。一模製層經形成以覆蓋該等導電跡線及該等導電襯墊。使該模製層薄化以暴露該等導電襯墊。一犧牲層形成在該模製層上及暴露之導電襯墊上。
本發明之另一態樣係關於一種製造一半導體裝置封裝的方法。在一些實施例中,該方法包括以下操作。提供上文所提及之封裝基板。將一晶粒安置於電連接至該等導電跡線之該模製層上。一第二模製層形成在該模製層上以包封該晶粒。自該模製層及該等暴露之導電襯墊移除該犧牲層。複數個電導體形成在該等暴露之導電襯墊上。
1:封裝基板
2:封裝基板
10:載體
12:晶種層
14:抗蝕劑層
14':抗蝕劑層
14H:開口
20:電路層
22:導電跡線
22E:邊緣
22S1:第一表面
22S2:第二表面
24:導電襯墊
24E:邊緣
24S1:第一表面
24S2:第二表面
30:模製層
30L:下表面
30U:上表面
40:預鍍框架
40E:邊緣
40S:表面
42:中間膜
50:犧牲層
60:晶粒
60P:電端子
62:導電結構
70:第二模製層
80:電導體
100:半導體裝置封裝
200:半導體裝置封裝
241:第一部分
242:第二部分
A:區
T1:厚度
T2:厚度
當結合附圖閱讀時,自以下詳細描述容易理解本發明之一些實施例的態樣。各種結構可能未按比例繪製,且各種結構之尺寸可出於論述清晰起見而任意增大或減小。
圖1係根據本發明之一些實施例的封裝基板之示意性橫截面圖。
圖2A、圖2B、圖2C、圖2D、圖2E、圖2F、圖2G、圖2H及圖2I說明根據本發明之一些實施例的製造封裝基板及半導體裝置封裝之操作。
圖3係根據本發明之一些實施例的封裝基板之示意性橫截面圖。
圖3A、圖3B及圖3C係根據本發明之一些實施例的圖2中的封裝基板之區A之示意性橫截面圖。
圖4A、圖4B、圖4C、圖4D及圖4E說明根據本發明之一些實施例的製造封裝基板及半導體裝置封裝之操作。
以下揭示內容提供用於實施所提供主題之不同特徵的許多不同實施例或實例。下文描述組件及配置的具體實例以闡明本發明之某些態樣。當然,此等組件及配置僅為實例且並不意欲為限制性的。舉例而言,在以下描述中,在第二特徵上方或在第二特徵上形成第一特徵可包括第一特徵與第二特徵直接接觸地形成或安置之實施例,且亦可包括在第一特徵與第二特徵之間形成或安置額外特徵以使得第一特徵與第二特徵不直接接觸的實施例。另外,本發明可在各種實例中重複附圖標號及/或字母。此重複係出於簡單及清晰之目的,且本身並不規定所論述的各種實施例及/或組態之間的關係。
如本文中所使用,為了易於描述,在本文中可使用諸如「在......之下」、「在......下方」、「在......之上」、「在......上方」、「在......上」、「上」、「下」、「左」、「右」、「豎直」、「水平」、「側」及類似者的空間相對術語來描述如圖式中所說明的一個元件或特徵與另一元件或特徵的關係。除圖式中所描繪的定向之外,空間相對術語亦意欲涵蓋裝置在使用或操作中的不同定向。裝置可以其他方式定向(旋轉90度或處於其他定向)且本文中所使用的空間相對描述詞同樣可相應地進行解釋。應理解,當將元件稱為「連接至」或「耦接至」另一元件時,該元件可直接連接至或耦接至另一元件,或可存在介入元件。
本發明提供具有薄的厚度及較強穩健性的封裝基板。封裝基板可經組態以支撐半導體晶粒及/或電子組件,且可經組態以將半導體晶粒及電子組件電連接至外部電子裝置,諸如印刷電路板。封裝基板可為包括暫時支撐電路層之犧牲層的中間產品。犧牲層可增強封裝基板之結構強度,且可在半導體晶粒及/或電子組件經形成且藉由包封體進行包封之後容易地經移除。因此,可減小最終產品(諸如半導體裝置封裝)之總厚度。封裝基板包括經組態為封裝基板之介電基底的模製層。模製層及包封體可由均質模製材料製成,且因此模製層及包封體包括均質介面。因此,確保了模製層與包封體之間的接合之可靠性。
圖1係根據本發明之一些實施例的封裝基板1之示意性橫截面圖。如圖1中所展示,封裝基板1包括電路層20、模製層30及犧牲層50。電路層20可包括複數個導電跡線22及導電襯墊24。在一些實施例中,導電襯墊24之寬度可比導電跡線22之寬度更寬,但不限於此。導電跡線22各自可包括第一表面22S1、與第一表面22S1相對的第二表面22S2,及連接第一表面22S1與第二表面22S2之邊緣22E。此外,導電襯墊24各自可包括第一表面24S1、與第一表面24S1相對的第二表面24S2,及連接第一表面24S1與第二表面24S2之邊緣24E。導電跡線22及導電襯墊24可包括導電材料,諸如金屬,包括銅或類似者。
模製層30具有上表面30U及與上表面30U相對的下表面30L。在一些實施例中,上表面30U可為封裝基板1之用於安置電子組件(諸如晶粒)的組件側,且下表面30L可為封裝基板1之用於安置電導體(諸如焊料)的焊料側(球側)。模製層30之材料可包括封裝材料(諸如環氧樹脂或類似者)及施配於封裝材料中之填充劑,諸如氧化矽填充劑。電路層20
可至少部分地嵌入於模製層30中,且相鄰導電跡線22及/或導電襯墊24可藉由模製層30間隔開。模製層30可部分地覆蓋導電跡線22及導電襯墊24。導電跡線22之第一表面22S1及導電襯墊24之第一表面24S1可自模製層30的上表面30U暴露。在一些實施例中,導電跡線22之邊緣22E及導電襯墊24之邊緣24E可由模製層30部分或完全地覆蓋。在一些實施例中,導電跡線22之第一表面22S1及導電襯墊24之第一表面24S1安置於相同水平位準處,且可實質上共面。在一些實施例中,導電襯墊24比導電跡線22更厚,且導電襯墊24之厚度T2大於導電跡線22之厚度T1。因此,導電跡線22之第二表面22S2可由模製層30覆蓋,而導電襯墊24之第二表面24S2可自模製層30的下表面30L暴露。
由於電路層20嵌入於模製層30中,因此電路層20與模製層30之總厚度可主要由模製層30之厚度決定。在一些實施例中,模製層30之厚度實質上等於50微米或比50微米薄、比40微米薄或甚至更薄來滿足薄的厚度要求。
在一些實施例中,導電襯墊24之第一表面24S1及/或第二表面24S2經組態以收納電連接件,諸如焊球、焊料凸塊、金屬支柱、金屬柱或類似者。在一些實施例中,導電跡線22之第一表面22S1可經組態以收納電連接件,諸如焊球、焊料凸塊、金屬支柱、金屬柱或類似者。
在一些實施例中,導電襯墊24中之每一者可包括彼此堆疊之第一部分241及第二部分242。第一部分241及第二部分242可包括相同的導電材料,諸如銅或類似者。第一部分241及第二部分242可彼此接觸,或經由介入導電層連接。第一部分241可比第二部分242更寬。第一部分241可包括導電襯墊24之第一表面24S1,且第二部分242可包括導電
襯墊24之第二表面24S2。在一些實施例中,導電襯墊24之第一部分241與導電跡線22可藉由相同製程一體形成,且可在厚度上實質上相等。
犧牲層50覆蓋模製層30之下表面30L及導電襯墊24之第二表面24S2。在一些實施例中,在導電襯墊24之第二表面24S2與犧牲層50之間不存在氣隙。借助於實例,導電襯墊24之第二表面24S2與犧牲層50以間隙間隔開,且中間膜42安置在模製層30的下表面30L與犧牲層50之間及導電襯墊24之第二表面24S2與犧牲層50之間以填充間隙。在一些其他實施例中,犧牲層50與導電襯墊24之第二表面24S2可接觸,且因此沒有氣隙形成於導電襯墊24的第二表面24S2與犧牲層50之間。由於沒有氣隙形成於導電襯墊24之第二表面24S2與犧牲層50之間,可避免歸因於在連續熱製程(successive thermal process)期間的氣泡而導致的爆裂問題(popcorn issue)。中間膜42可包括導電膜,諸如銅膜。在一些實施例中,犧牲層50可包括導電層,諸如銅層。中間膜42可藉由無電極電鍍、沈積或其他合適的製程來形成。在一些實施例中,導電層可藉由電鍍來形成,且中間膜42可經組態為用於電鍍犧牲層50之晶種層。在一些實施例中,犧牲層50包括絕緣層,諸如乾膜。在一些實施例中,乾膜可貼合至模製層30之下表面30L,且中間膜42可在將乾膜分離時經組態為脫模層。
在一些實施例中,封裝基板1係中間產品。犧牲層50可經組態為暫時增強層,以支撐具有薄的厚度之模製層30及電路層20。犧牲層50將在晶粒及/或其他組件形成於模製層30之上表面30U上之後經移除。犧牲層50之厚度可經選擇為小於、等於或大於模製層30之厚度,只要犧牲層50可為模製層30提供足夠的支撐即可。因此,藉由犧牲層50支撐之模製層30及電路層20可在輸送製程及相繼製程期間進行處置。借助
於實例,犧牲層之厚度與具有嵌入式電路層20的模製層之厚度的厚度總和實質上等於或大於約50微米、等於或大於約80微米、實質上等於或大於約90微米、實質上等於或大於約100微米、實質上等於或大於約110微米或甚至更大。在一些實施例中,模製層30與嵌入式電路層20之總厚度的範圍介於約20微米至約50微米,且犧牲層50之厚度可為模製層30與嵌入式電路層20之總厚度的約一至五倍,使得犧牲層50之結構強度足以向模製層30及嵌入式電路層20提供支撐力。借助於實例,模製層30與嵌入式電路層20之總厚度為約20微米,且犧牲層50之厚度的範圍介於約20微米至約100微米。
圖2A、圖2B、圖2C、圖2D、圖2E、圖2F、圖2G、圖2H及圖2I說明根據本發明之一些實施例的製造封裝基板及半導體裝置封裝之操作。如圖2A中所展示,提供載體10,諸如玻璃載體、塑膠載體或半導體載體。晶種層12可視情況形成於載體10上。晶種層12可包括藉由無電極電鍍或其他合適的製程形成的薄金屬層,諸如薄銅層。
電路層20隨後形成於載體10上。在一些實施例中,電路層20藉由如圖2B及圖2C中所說明之操作來形成。如圖2B中所展示,複數個導電跡線22及導電襯墊24之第一部分241形成於載體10上。在一些實施例中,具有複數個開口14H之抗蝕劑層14形成於載體10上,且導電跡線22及導電襯墊24之第一部分241形成於開口14H中。抗蝕劑層14可包括光敏材料(諸如光阻),且開口14H可藉由曝光及顯影(exposure and development)操作來形成。導電跡線22及導電襯墊24之第一部分241可藉由相同電鍍而形成於晶種層12上。因此,導電跡線22及導電襯墊24之第一部分241可在厚度上實質上相等。如圖2C中所展示,抗蝕劑層14可經移除,且另一抗
蝕劑層14'(諸如光阻層)可形成於載體10上。抗蝕劑層14'可覆蓋導電跡線22且暴露導電襯墊24之第一部分241,且舉例而言,導電襯墊24之第二部分242可藉由電鍍形成於導電襯墊24暴露出之第一部分241上。在一些實施例中,第二部分242比第一部分241更窄。導電襯墊24之厚度T2大於導電跡線22之厚度T1。
導電跡線22可包括面朝載體10之第一表面22S1及與第一表面22S1相對的第二表面22S2。導電襯墊24之第一部分241可包括面朝載體10之第一表面24S1,且導電襯墊24之第二部分242可包括與第一表面24S1相對的第二表面24S2。
如圖2D中所展示,抗蝕劑層14'經移除。模製層30形成於載體10上以覆蓋導電跡線22及導電襯墊24。模製層30可包括封裝材料(諸如環氧樹脂)及填充劑(諸如氧化矽填充劑),且可藉由用塑封模具進行模製操作來形成。模製層30包括面朝載體10之上表面30U及與上表面30U相對的下表面30L。
如圖2E中所展示,藉由例如經由下表面30L進行研磨來使模製層30薄化,以暴露導電襯墊24之第二表面24S2。導電襯墊之厚度T2與導電跡線22的厚度T1之間的厚度差等於或大於研磨製程的厚度公差,使得在研磨製程之後,導電跡線22可由模製層30覆蓋及保護。
如圖2F中所展示,中間膜42可視情況形成於模製層30上及暴露之導電襯墊24上。中間膜42可藉由無電極電鍍、電鍍、沈積或其他合適的製程來形成。在一些實施例中,中間膜42可包括薄銅層。
如圖2G中所展示,犧牲層50形成於模製層30及中間膜42上。在一些實施例中,犧牲層50包括導電層,諸如金屬層。借助於實例,
導電層可包括銅層。銅層可藉由將中間膜42用作晶種層進行電鍍來形成。在一些其他實施例中,犧牲層50包括絕緣層。借助於實例,絕緣層可包括乾膜。犧牲層50可幫助支撐模製層30及電路層20,且因此載體10可自模製層30經移除。在存在晶種層12之情況下,模製層30之上表面30U可藉由如下操作經處理:例如蝕刻以移除晶種層12來形成如圖1中所說明的封裝基板1。在一些實施例中,導電跡線22之第一表面22S1與導電襯墊24之第一表面24S1可在表面處理之後略微低於模製層30之上表面30U或與該上表面30U共面。
如圖2H中所展示,複數個晶粒60可安置於模製層30上且電連接至導電跡線22。在一些實施例中,晶粒60以倒裝晶片方式電連接至電路層20。舉例而言,晶粒60可包括電端子60P(諸如接合襯墊),其面朝電路層20且經由導電結構62(諸如焊料凸塊或類似者)電連接至導電跡線22及/或導電襯墊24。在一些其他實施例中,晶粒60可經由線接合電連接至導電跡線22及/或導電襯墊24。第二模製層70可形成於模製層30上以包封晶粒60。第二模製層70可包括封裝材料(諸如環氧樹脂)及填充劑(諸如氧化矽填充劑),且可藉由用塑封模具進行模製操作來形成。在一些實施例中,第二模製層70與模製層30接觸。模製層30及第二模製層70可由在特性(諸如熱膨脹係數(CTE)、彈性模數及類似者)上類似之均質模製材料製成。因此,可緩解翹曲及分層問題。
在一些實施例中,中間膜42安置在模製層30之下表面30L與犧牲層50之間及導電襯墊24的第二表面24S2與犧牲層50之間。因此,可不存在形成於導電襯墊24之第二表面24S2與犧牲層50之間的氣隙,且可避免歸因於在用導電結構62將晶粒60與電路層20接合之熱製程期間的
氣泡而導致的爆裂問題。
如圖2I中所展示,犧牲層50及中間膜42經移除以暴露導電襯墊24之第二表面24S2。中間膜42及犧牲層50可各自藉由蝕刻、分離或其他合適的製程來移除。借助於實例,中間膜42可包括導電膜(諸如銅膜),且可藉由蝕刻來移除。在犧牲層50包括導電層(諸如銅層)之情況下,導電層可藉由蝕刻來移除。在犧牲層50為絕緣層(諸如乾膜)之情況下,絕緣層可藉由分離來移除,且絕緣層之殘餘物可連同中間膜42一起移除。複數個電導體80(諸如焊球)可形成於導電襯墊24之第二表面24S2上,以便於與外部電組件(諸如印刷電路板(PCB)或類似者)進行外部電連接。可進行單切以將封裝基板1、晶粒60及第二模製層70分割成複數個半導體裝置封裝100。
封裝基板1包括嵌入於模製層30中的電路層20,且因此可減小封裝基板1之厚度。電路層20及模製層30暫時由犧牲層50支撐,該犧牲層50增強封裝基板1之結構強度且允許在相繼製造操作中載送及處置封裝基板1。犧牲層50可在其他電子組件(諸如半導體晶粒)安置於封裝基板1上之後經移除,且因此可減小半導體裝置封裝100之總厚度。
本發明之封裝基板及製造方法不限於上文所描述的實施例,且可根據其他實施例來實施。為了簡化描述且為了在本發明之各種實施例之間方便比較,以下實施例的類似組件係以相同數字標記且可能不會冗餘地描述。
圖3係根據本發明之一些實施例的封裝基板2之示意性橫截面圖。如圖3中所展示,相比於如圖1中所說明之封裝基板1,封裝基板2可進一步包括分別安置於導電襯墊24之第二表面24S2上的複數個預鍍框
架(PPF)40。PPF 40之材料與犧牲層50之材料不同,使得PPF 40與犧牲層50可具有不同蝕刻選擇性。因此,PPF 40可在蝕刻導電層期間經組態為蝕刻終止層,且導電襯墊24在移除犧牲層50期間未經損壞。PPF 40之材料的實例可包括但不限於鎳(Ni)、鈀(Pd)、金(Au)或其組合,且犧牲層50及導電襯墊24之材料的實例可包括但不限於銅。PPF 40可為包括鎳(Ni)、鈀(Pd)、金(Au)或其合金之單層結構或具有各自包括鎳(Ni)、鈀(Pd)或金(Au)的層之多層結構。在一些實施例中,預鍍框架40之邊緣40E分別與導電襯墊24之邊緣24E實質上對準。
圖3A、圖3B及圖3C係根據本發明之一些實施例的圖2中的封裝基板2之區A之示意性橫截面圖。如圖3A中所展示,PPF 40之表面40S可與模製層30之下表面30L實質上共面。如圖3B中所展示,PPF 40之表面40S可實質上低於模製層30之下表面30L。如圖3C中所展示,PPF 40之表面40S可實質上高於模製層30之下表面30L。在一些實施例中,PPF 40之表面40S可包括凸形表面,且PPF 40可進一步部分地覆蓋模製層30之下表面30L。
圖4A、圖4B、圖4C、圖4D及圖4E說明根據本發明之一些實施例的製造封裝基板及半導體裝置封裝之操作。如圖4A中所展示,晶種層12、電路層20及模製層30可形成於載體10上。晶種層12、電路層20及模製層30可藉由與圖2A至圖2E中所說明之操作類似的操作來形成。在一些實施例中,導電襯墊24之第二表面24S2可自模製層30之下表面30L略微凹入。在一些其他實施例中,導電襯墊24之第二表面24S2可與模製層30之下表面30L實質上共面。
如圖4B中所展示,複數個PPF 40在形成犧牲層50之前分別
形成於導電襯墊24之暴露的第二表面24S2上。PPF 40可藉由電鍍或其他合適的製程來形成。在一些實施例中,中間膜42可視情況形成於模製層30上及PPF 40上。
如圖4C中所展示,犧牲層50形成於中間膜42上。在一些實施例中,犧牲層50包括導電層,諸如銅層。銅層可藉由將中間膜42用作晶種層進行電鍍來形成。在一些實施例中,犧牲層50包括絕緣層(諸如乾膜),且乾膜可貼合至中間膜42。犧牲層50可幫助支撐模製層30及電路層20,且因此載體10可自模製層30經移除。在存在晶種層12之情況下,模製層30之上表面30U可藉由如下操作經處理:例如蝕刻以移除晶種層12來形成如圖3中所說明的封裝基板2。在一些實施例中,導電跡線22之第一表面22S1與導電襯墊24之第一表面24S1可在表面處理之後略微低於模製層30之上表面30U或與該上表面30U共面。
如圖4D中所展示,複數個晶粒60可安置於模製層30上且電連接至導電跡線22及/或導電襯墊24。在一些實施例中,晶粒60以倒裝晶片方式電連接至電路層20。舉例而言,晶粒60可包括電端子60P(諸如接合襯墊),其面朝電路層20且經由導電結構62(諸如焊料凸塊或類似者)電連接至導電跡線22。在一些其他實施例中,晶粒60可經由線接合電連接至導電跡線22及/或導電襯墊24。第二模製層70可形成於模製層30上以包封晶粒60。第二模製層70可包括封裝材料(諸如環氧樹脂)及填充劑(諸如氧化矽填充劑),且可藉由用塑封模具進行模製操作來形成。在一些實施例中,第二模製層70與模製層30接觸。模製層30及第二模製層70可由在特性(諸如熱膨脹係數(CTE)、彈性模數及類似者)上類似之均質模製材料製成。因此,可緩解翹曲及分層問題。
如圖4E中所展示,犧牲層50及中間膜42經移除以暴露PPF 40。中間膜42及犧牲層50可各自藉由蝕刻、分離或其他合適的製程來移除。在一些實施例中,中間膜42可包括導電膜(諸如銅膜),且可藉由蝕刻來移除。
在犧牲層50包括導電層(諸如銅層)之情況下,導電層可藉由蝕刻來移除。PPF 40之材料與犧牲層50及中間膜42之材料不同,使得PPF 40可具有與犧牲層50及中間膜42之蝕刻選擇性不同的蝕刻選擇性。因此,PPF 40可在蝕刻犧牲層50或中間膜42期間經組態為蝕刻終止層,且導電襯墊24在移除犧牲層50或中間膜42期間未經損壞。PPF 40之材料的實例可包括但不限於鎳(Ni)、鈀(Pd)、金(Au)或其組合,且犧牲層50及導電襯墊24之實例可包括但不限於銅。PPF 40可為包括鎳(Ni)、鈀(Pd)、金(Au)或其合金之單層結構或具有各自包括鎳(Ni)、鈀(Pd)或金(Au)的層之多層結構。在犧牲層50為絕緣層(諸如乾膜)之情況下,絕緣層可藉由分離來移除,且絕緣層之殘餘物可連同中間膜42一起移除。
複數個電導體80(諸如焊球)可形成於PPF 40上,以便於與外部電組件(諸如印刷電路板(PCB)或類似者)進行外部電連接。可進行單切以將封裝基板1、晶粒60及第二模製層70分割成複數個半導體裝置封裝200。
在本發明之一些實施例中,封裝基板包括嵌入於模製層中的電路層,且因此可減小封裝基板之厚度。電路層及模製層暫時由犧牲層支撐,該犧牲層增強封裝基板之結構強度且允許在相繼製造操作中載送及處置封裝基板。犧牲層可在其他電子組件(諸如半導體晶粒)安置於封裝基板上之後經移除,且因此可減小半導體裝置封裝之總厚度。
除非上下文另外清楚地規定,否則如本文中所使用,單數術語「一(a/an)」及「該」可包括複數個參照物。
如本文中所使用,術語「大約」、「實質上」、「實質的」及「約」用於描述及考慮較小變化。當與事件或情形結合使用時,術語可指事件或情形精確發生之情況以及事件或情形極其近似發生之情況。舉例而言,當與數值結合使用時,該等術語可指小於或等於彼數值之±10%的變化範圍,諸如小於或等於±5%、小於或等於±4%、小於或等於±3%、小於或等於±2%、小於或等於±1%、小於或等於±0.5%、小於或等於±0.1%或小於或等於±0.05%之變化範圍。舉例而言,若兩個數值之間的差小於或等於該等值之平均值的±10%,諸如小於或等於±5%、小於或等於±4%、小於或等於±3%、小於或等於±2%、小於或等於±1%、小於或等於±0.5%、小於或等於±0.1%或小於或等於±0.05%,則可認為兩個值「實質上」相同或相等。舉例而言,「實質上」平行可指相對於0°而言小於或等於±10°之角度變化範圍,諸如小於或等於±5°、小於或等於±4°、小於或等於±3°、小於或等於±2°、小於或等於±1°、小於或等於±0.5°、小於或等於±0.1°或小於或等於±0.05°之角度變化範圍。舉例而言,「實質上」垂直可指相對於90°而言小於或等於±10°之角度變化範圍,諸如小於或等於±5°、小於或等於±4°、小於或等於±3°、小於或等於±2°、小於或等於±1°、小於或等於±0.5°、小於或等於±0.1°或小於或等於±0.05°的角度變化範圍。
另外,有時在本文中以範圍格式呈現量、比率及其他數值。應理解,此類範圍格式出於便利及簡潔起見而使用,且應靈活地理解為包括明確地指定為範圍限制之數值,而且亦包括涵蓋於彼範圍內之所有
個別數值或子範圍,如同明確地指定每一數值及子範圍一般。
儘管已參考本發明之具體實施例描述並說明本發明,但此等描述及說明並不限制本發明。熟習此項技術者應理解,在不脫離如由所附申請專利範圍所定義之本發明的真實精神及範疇之情況下,可進行各種改變且可替換等效物。說明可不必按比例繪製。歸因於製造製程及公差,在本發明中之藝術再現與實際設備之間可存在區別。可存在並未具體說明的本發明之其他實施例。應將本說明書及圖式視為說明性而非限制性的。可進行修改,以使特定情形、材料、物質組成、方法或製程適應於本發明之目標、精神及範疇。所有此等修改意欲在此處附加之申請專利範圍之範疇內。儘管參考按特定次序執行之特定操作來描述本文中所揭示的方法,但應理解,在不脫離本發明之教示的情況下,可組合、再細分或重新定序此等操作以形成等效方法。因此,除非在本文中具體指示,否則操作之次序及分組並非對本發明之限制。
1:封裝基板
20:電路層
22:導電跡線
22E:邊緣
22S1:第一表面
22S2:第二表面
24E:邊緣
24S1:第一表面
24S2:第二表面
30:模製層
30U:上表面
30L:下表面
42:中間膜
50:犧牲層
241:第一部分
242:第二部分
T1:厚度
T2:厚度
Claims (13)
- 一種封裝基板,其包含:一電路層,其包含一導電跡線及一導電襯墊;一模製層,包覆該電路層,該模製層具有一上表面與相對該上表面之一下表面,其中,該導電跡線的一上表面與該導電襯墊的一上表面完全從該模製層的該上表面凹陷,其中,該模製層的該上表面具有暴露該導電襯墊的一開口,其中該開口的一內表面在剖視圖中與該導電襯墊的一側表面大致對齊,及一犧牲層,其覆蓋該模製層之該下表面,其中,該導電襯墊的一下表面從該模製層的該下表面暴露,其中,該導電襯墊在剖視圖中呈T字形,且該導電襯墊的該上表面寬於該導電襯墊的該下表面,其中,該模製層為整體結構,其中,該導電襯墊的該下表面完全從該模製層的該下表面凹陷。
- 一種封裝基板,其包含:一電路層,其包含一導電跡線及一導電襯墊;一模製層,包覆該電路層,該模製層具有一上表面與相對該上表面之一下表面,其中,該導電跡線的一上表面與該導電襯墊的一上表面完全從該模製層的該上表面凹陷, 其中,該模製層的該上表面具有暴露該導電襯墊的一開口,其中該開口的一內表面在剖視圖中與該導電襯墊的一側表面大致對齊,及一犧牲層,其覆蓋該模製層之該下表面,其中,該導電襯墊的一下表面從該模製層的該下表面暴露,其中,該導電襯墊在剖視圖中呈T字形,且該導電襯墊的該上表面寬於該導電襯墊的該下表面,其中,該模製層為整體結構,其中,該導電跡線的一下表面未從該模製層的該下表面暴露。
- 如請求項2之封裝基板,其中該犧牲層包含一金屬。
- 如請求項2之封裝基板,進一步包含設置在該模製層的該下表面與該犧牲層之間的一晶種層,該晶種層與該犧牲層接觸。
- 如請求項4之封裝基板,進一步包含嵌於該模製層且與該晶種層接觸的一蝕刻終止層。
- 如請求項5之封裝基板,其中該蝕刻終止層延伸至該晶種層中。
- 如請求項5之封裝基板,其中在一剖視圖中,該蝕刻終止層的一寬度與該導電襯墊的下表面的一寬度實質相同。
- 如請求項5之封裝基板,其中該蝕刻終止層不延伸超過該模製層的該 下表面。
- 如請求項2之封裝基板,其中該導電跡線的該上表面完全從該模製層的該上表面暴露。
- 一種封裝基板,其包含:一整體的模製層,其具有一上表面與相對該上表面之一下表面;一電路結構,其嵌於該模製層中且包含至少一導電襯墊,其中,該至少一導電襯墊的一上表面從該模製層的該上表面暴露並完全凹陷,其中該至少一導電襯墊的一下表面從該模製層的該下表面暴露並完全凹陷,其中,該電路結構進一步包含嵌於該模製層的至少一導電跡線,其中,該至少一導電跡線的一上表面從該模製層的該上表面暴露並完全凹陷,其中,該至少一導電跡線的一下表面未從該模製層暴露;一晶粒,設置於該模製層的該上表面,其中在一剖視圖中,該晶粒與該導電襯墊不重疊;及一焊料,其與該導電跡線的該上表面及該晶粒接觸,其中,該焊料未與該至少一導電襯墊的該上表面接觸。
- 如請求項10之封裝基板,其進一步包含一第二模製層,其設置於該模製層的該上表面且延伸入該模製層中。
- 如請求項11之封裝基板,其中該第二模製層與該至少一導電襯墊的該上表面接觸。
- 如請求項11之封裝基板,進一步包含一電連接器,其設置於該至少一導電襯墊的該下表面,其中在一剖視圖中,該晶粒不與該電連接器重疊。
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