TWI830830B - 訊號發送及接收裝置、其操作方法、記憶體元件以及其操作方法 - Google Patents

訊號發送及接收裝置、其操作方法、記憶體元件以及其操作方法 Download PDF

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Publication number
TWI830830B
TWI830830B TW108144444A TW108144444A TWI830830B TW I830830 B TWI830830 B TW I830830B TW 108144444 A TW108144444 A TW 108144444A TW 108144444 A TW108144444 A TW 108144444A TW I830830 B TWI830830 B TW I830830B
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TW
Taiwan
Prior art keywords
die
circuit
signal
pin
terminal
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TW108144444A
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English (en)
Chinese (zh)
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TW202030993A (zh
Inventor
李昶敎
李東建
張晋熏
河慶洙
吳起碩
金經綸
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南韓商三星電子股份有限公司
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1048—Data bus control circuits, e.g. precharging, presetting, equalising
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1051—Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management 

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  • Memory System (AREA)
  • Logic Circuits (AREA)
TW108144444A 2018-12-21 2019-12-05 訊號發送及接收裝置、其操作方法、記憶體元件以及其操作方法 TWI830830B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR10-2018-0167576 2018-12-21
KR20180167576 2018-12-21
KR10-2019-0049826 2019-04-29
KR1020190049826A KR20200078294A (ko) 2018-12-21 2019-04-29 신호를 송수신 하기 위한 장치, 그것의 동작 방법, 메모리 장치 및 그것의 동작 방법

Publications (2)

Publication Number Publication Date
TW202030993A TW202030993A (zh) 2020-08-16
TWI830830B true TWI830830B (zh) 2024-02-01

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TW108144444A TWI830830B (zh) 2018-12-21 2019-12-05 訊號發送及接收裝置、其操作方法、記憶體元件以及其操作方法

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KR (1) KR20200078294A (ko)
TW (1) TWI830830B (ko)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100109704A1 (en) * 2008-10-30 2010-05-06 Dennis Carr Differential on-line termination
US20130002291A1 (en) * 2011-06-30 2013-01-03 Joon-Young Park Semiconductor memory device, memory controller and memory system having on die termination and on die termination controlling method
TW201709065A (zh) * 2015-05-29 2017-03-01 英特爾公司 記憶體裝置特定之自我更新進入與退出技術
US20170288634A1 (en) * 2016-03-31 2017-10-05 Dae-Woon Kang Nonvolatile memory device, memory system including the same and method of operating the same
US20180026634A1 (en) * 2016-07-21 2018-01-25 Samsung Electronics Co., Ltd. On-die termination circuit, a memory device including the on-die termination circuit, and a memory system including the memory device
US20180039588A1 (en) * 2016-08-04 2018-02-08 Samsung Electronics Co ., Ltd. Memory system including on-die termination and method of controlling on-die termination thereof

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100109704A1 (en) * 2008-10-30 2010-05-06 Dennis Carr Differential on-line termination
US20130002291A1 (en) * 2011-06-30 2013-01-03 Joon-Young Park Semiconductor memory device, memory controller and memory system having on die termination and on die termination controlling method
TW201709065A (zh) * 2015-05-29 2017-03-01 英特爾公司 記憶體裝置特定之自我更新進入與退出技術
US20170288634A1 (en) * 2016-03-31 2017-10-05 Dae-Woon Kang Nonvolatile memory device, memory system including the same and method of operating the same
US20180026634A1 (en) * 2016-07-21 2018-01-25 Samsung Electronics Co., Ltd. On-die termination circuit, a memory device including the on-die termination circuit, and a memory system including the memory device
US20180039588A1 (en) * 2016-08-04 2018-02-08 Samsung Electronics Co ., Ltd. Memory system including on-die termination and method of controlling on-die termination thereof

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Publication number Publication date
KR20200078294A (ko) 2020-07-01
TW202030993A (zh) 2020-08-16

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