TWI827701B - 晶圓加工方法 - Google Patents

晶圓加工方法 Download PDF

Info

Publication number: TWI827701B
Authority: TW; Taiwan
Prior art keywords: wafer; sheet; processing method; item; patent application
Prior art date: 2018-10-16

Application number

TW108136939A

Other languages

English (en)

Chinese (zh)

Other versions

TW202032643A (zh

Inventor

木內逸人

Original Assignee

日商迪思科股份有限公司

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2018-10-16

Filing date

2019-10-14

Publication date

2024-01-01

2019-10-14 Application filed by 日商迪思科股份有限公司 filed Critical 日商迪思科股份有限公司

2020-09-01 Publication of TW202032643A publication Critical patent/TW202032643A/zh

2024-01-01 Application granted granted Critical

2024-01-01 Publication of TWI827701B publication Critical patent/TWI827701B/zh

Links

238000003672 processing method Methods 0.000 title claims abstract description 21
238000007731 hot pressing Methods 0.000 claims abstract description 14
229920000728 polyester Polymers 0.000 claims abstract description 9
229920000098 polyolefin Polymers 0.000 claims abstract description 9
238000010438 heat treatment Methods 0.000 claims description 29
-1 polyethylene Polymers 0.000 claims description 26
238000003825 pressing Methods 0.000 claims description 14
239000004698 Polyethylene Substances 0.000 claims description 10
229920000573 polyethylene Polymers 0.000 claims description 10
238000000034 method Methods 0.000 claims description 9
239000000853 adhesive Substances 0.000 claims description 8
230000001070 adhesive effect Effects 0.000 claims description 8
230000008569 process Effects 0.000 claims description 8
239000004743 Polypropylene Substances 0.000 claims description 7
239000004793 Polystyrene Substances 0.000 claims description 7
229920000139 polyethylene terephthalate Polymers 0.000 claims description 7
239000005020 polyethylene terephthalate Substances 0.000 claims description 7
229920001155 polypropylene Polymers 0.000 claims description 7
229920002223 polystyrene Polymers 0.000 claims description 6
238000002844 melting Methods 0.000 claims description 5
230000008018 melting Effects 0.000 claims description 5
239000011112 polyethylene naphthalate Substances 0.000 claims description 5
229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 claims description 4
239000004642 Polyimide Substances 0.000 claims description 3
239000004744 fabric Substances 0.000 claims description 3
229920001721 polyimide Polymers 0.000 claims description 3
240000007594 Oryza sativa Species 0.000 claims description 2
235000007164 Oryza sativa Nutrition 0.000 claims description 2
235000009566 rice Nutrition 0.000 claims description 2
IKCQWKJZLSDDSS-UHFFFAOYSA-N 2-formyloxyethyl formate Chemical compound O=COCCOC=O IKCQWKJZLSDDSS-UHFFFAOYSA-N 0.000 claims 1
229920000417 polynaphthalene Polymers 0.000 claims 1
235000012431 wafers Nutrition 0.000 description 133
239000010410 layer Substances 0.000 description 30
238000007789 sealing Methods 0.000 description 8
239000002313 adhesive film Substances 0.000 description 4
239000012790 adhesive layer Substances 0.000 description 4
239000000463 material Substances 0.000 description 4
239000007788 liquid Substances 0.000 description 3
230000002093 peripheral effect Effects 0.000 description 3
230000001681 protective effect Effects 0.000 description 3
239000011347 resin Substances 0.000 description 3
229920005989 resin Polymers 0.000 description 3
238000001816 cooling Methods 0.000 description 2
238000005498 polishing Methods 0.000 description 2
239000004575 stone Substances 0.000 description 2
XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
239000000919 ceramic Substances 0.000 description 1
230000000593 degrading effect Effects 0.000 description 1
238000001514 detection method Methods 0.000 description 1
230000000694 effects Effects 0.000 description 1
239000010408 film Substances 0.000 description 1
230000007246 mechanism Effects 0.000 description 1
230000035699 permeability Effects 0.000 description 1
230000009467 reduction Effects 0.000 description 1
238000000926 separation method Methods 0.000 description 1
238000001179 sorption measurement Methods 0.000 description 1
239000010409 thin film Substances 0.000 description 1

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02016—Backside treatment
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/185—Joining of semiconductor bodies for junction formation
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
- H01L2221/68386—Separation by peeling

Landscapes

Engineering & Computer Science (AREA)
Microelectronics & Electronic Packaging (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Manufacturing & Machinery (AREA)
Computer Hardware Design (AREA)
Physics & Mathematics (AREA)
Power Engineering (AREA)
Mechanical Treatment Of Semiconductor (AREA)
Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
Grinding Of Cylindrical And Plane Surfaces (AREA)
Dicing (AREA)

TW108136939A 2018-10-16 2019-10-14 晶圓加工方法 TWI827701B (zh)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
JP2018194922A JP7317483B2 (ja)	2018-10-16	2018-10-16	ウエーハの加工方法
JP2018-194922		2018-10-16

Publications (2)

Publication Number	Publication Date
TW202032643A TW202032643A (zh)	2020-09-01
TWI827701B true TWI827701B (zh)	2024-01-01

Family

ID=70297526

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
TW108136939A TWI827701B (zh)	2018-10-16	2019-10-14	晶圓加工方法

Country Status (4)

Country	Link
JP (1)	JP7317483B2 (ja)
KR (1)	KR20200042849A (ja)
CN (1)	CN111063608A (ja)
TW (1)	TWI827701B (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
CN112735978B (zh) *	2020-12-16	2024-01-30	全球能源互联网研究院有限公司	压接装置和有压烧结设备

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP2005246491A (ja) *	2004-03-01	2005-09-15	Disco Abrasive Syst Ltd	研削装置及びウェーハの研削方法
JP2011029450A (ja) *	2009-07-27	2011-02-10	Disco Abrasive Syst Ltd	ウエーハの加工方法
JP5762213B2 (ja) *	2011-08-15	2015-08-12	株式会社ディスコ	板状物の研削方法
JP5997477B2 (ja) *	2012-03-30	2016-09-28	リンテック株式会社	表面保護用シート
US9096032B2 (en) *	2012-04-24	2015-08-04	Shin-Etsu Chemical Co., Ltd.	Wafer processing laminate, wafer processing member, temporary bonding arrangement, and thin wafer manufacturing method
WO2014003056A1 (ja) *	2012-06-29	2014-01-03	日立化成株式会社	半導体装置の製造方法
JP2014088523A (ja) *	2012-10-31	2014-05-15	Nitto Denko Corp	半導体装置製造用接着シート及び半導体装置の製造方法
JP6219196B2 (ja) *	2014-02-26	2017-10-25	リンテック株式会社	シート貼付方法および貼付装置

2018
- 2018-10-16 JP JP2018194922A patent/JP7317483B2/ja active Active
2019
- 2019-09-30 KR KR1020190120747A patent/KR20200042849A/ko active Search and Examination
- 2019-10-14 TW TW108136939A patent/TWI827701B/zh active
- 2019-10-15 CN CN201910977745.6A patent/CN111063608A/zh active Pending

Also Published As

Publication number	Publication date
TW202032643A (zh)	2020-09-01
KR20200042849A (ko)	2020-04-24
JP7317483B2 (ja)	2023-07-31
JP2020064922A (ja)	2020-04-23
CN111063608A (zh)	2020-04-24

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TWI787535B (zh)	2022-12-21	晶圓加工方法
JP5027460B2 (ja)	2012-09-19	ウエハの接着方法、薄板化方法、及び剥離方法
US10916466B2 (en)	2021-02-09	Wafer uniting method
TWI810309B (zh)	2023-08-01	晶圓的加工方法
TWI827701B (zh)	2024-01-01	晶圓加工方法
JP2019186488A (ja)	2019-10-24	ウエーハの加工方法
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