TW202032643A - 晶圓加工方法 - Google Patents
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Abstract
[課題] 提供一種晶圓加工方法,即使加工晶圓的背面亦不會使元件的品質下降。[解決手段] 根據本發明,提供一種晶圓加工方法,將由分割預定線12劃分成多個元件11並形成於正面10a之晶圓10的背面10b進行加工,該晶圓加工方法至少由下述步驟所構成:晶圓配設步驟,在上表面22形成為平坦的支撐台20的該上表面22,鋪設與晶圓110的形狀相等以上大小的聚烯烴系薄片或聚酯系薄片中任一種的薄片14,並且在薄片14的上表面鋪上較晶圓10直徑小的剝離層16,將晶圓10的正面10a定位於薄片14的上表面;薄片熱壓著步驟,透過薄片14及剝離層16將配設於支撐台20的晶圓10在密閉環境內減壓而加熱薄片14,並按壓晶圓10將晶圓10的外周熱壓著於薄片14;加工步驟,對晶圓10的背面10b施予加工;以及剝離步驟,將薄片14從晶圓10剝離。
Description
本發明係一種加工晶圓背面的晶圓加工方法。
由分割預定線劃分並在正面形成IC、LSI等多個元件的晶圓,是藉由研削裝置使背面研削而加工到預定厚度後,藉由切割裝置分割為各個元件晶片,並被利用於行動電話、電腦等電子設備。
研削裝置係至少由以下構件所構成而可將晶圓加工到期望厚度:卡盤台,具有保持晶圓的保持面;研削手段,其具備可旋轉的研削輪,該研削輪將該卡盤台所保持的晶圓的上表面進行研削;以及進給手段,將研削磨石研削進給(例如參閱專利文獻1)。
在上述的研削裝置中將晶圓進行研削之際,在晶圓的正面黏貼具有黏著層的保護膠膜,以使在晶圓的正面形成的多個元件不會由於卡盤台的保持面與晶圓的正面的接觸而發生損傷。
[習知技術文獻]
[專利文獻]
[專利文獻1]日本特開2005-246491號公報
[發明所欲解決的課題]
如上所述,藉由在晶圓的正面黏貼具有黏著層的保護膠膜,迴避了在研削晶圓的背面時傷及晶圓的正面等的問題,但在研削結束後從晶圓的正面剝離保護膠膜時,黏著層的一部分(黏著屑)附著而殘留,會有將晶圓分割為一個個的晶片後的元件品質下降之問題。
本發明鑒於上述事實,以此為主要技術課題提供一種晶圓加工方法,即使加工晶圓的背面亦不會使元件的品質下降。
[解決課題的技術手段]
為了解決上述主要技術課題,根據本發明提供一種晶圓加工方法,將由分割預定線劃分成多個元件並形成於正面之晶圓的背面進行加工,該晶圓加工方法至少由下述步驟所構成:晶圓配設步驟,在上表面形成為平坦的支撐台的該上表面,鋪設與晶圓的形狀相等以上大小的聚烯烴系薄片或聚酯系薄片中任一種的薄片,並且在該薄片的上表面鋪設較晶圓直徑小的剝離層,將晶圓的正面定位於該薄片的上表面;薄片熱壓著步驟,透過該薄片及該剝離層將配設於該支撐台的晶圓在密閉環境內減壓而加熱該薄片,並按壓晶圓將晶圓的外周熱壓著於該薄片;加工步驟,對晶圓的背面施予加工;以及剝離步驟,將該薄片從晶圓剝離。
該剝離層可包含紙、布、糯米紙或聚醯亞胺薄片中至少任一者。
較佳為,該支撐台包含加熱手段,在該薄片熱壓著步驟中,以使該支撐台藉由該加熱手段加熱之方式構成。較佳為,該支撐台的上表面以氟樹脂覆蓋。進而,在該加工步驟中,可實施研削晶圓的背面之研削加工。
較佳為,該聚烯烴系薄片係由聚乙烯薄片,聚丙烯薄片或聚苯乙烯薄片中的任一者所構成。較佳為,在該薄片熱壓著步驟中,選擇該聚乙烯薄片的情況之加熱溫度為120至140℃,選擇該聚丙烯薄片的情況之加熱溫度為160至180℃,選擇該聚苯乙烯薄片的情況之加熱溫度為220至240℃。
較佳為,該聚酯系薄片係由聚對苯二甲酸乙二醇酯薄片、聚萘二甲酸乙二醇酯薄片中的任一者所構成。較佳為,在該薄片熱壓著步驟中,選擇該聚對苯二甲酸乙二醇酯薄片的情況之加熱溫度為250至270℃,選擇該聚萘二甲酸乙二醇酯薄片的情況之加熱溫度為160至180℃。
較佳為,在該薄片熱壓著步驟中,該薄片圍繞晶圓並以***之方式按壓晶圓。
[發明功效]
本發明的晶圓加工方法至少由以下所構成:晶圓配設步驟,在上表面形成為平坦的支撐台的該上表面,鋪設與晶圓的形狀相等以上大小的聚烯烴系薄片或聚酯系薄片中任一種的薄片,並且在該薄片的上表面鋪設較晶圓直徑小的剝離層,將晶圓的正面定位於該薄片的上表面;薄片熱壓著步驟,透過該薄片及該剝離層將配設於該支撐台的晶圓在密閉環境內減壓而加熱該薄片,並按壓晶圓將晶圓的外周熱壓著於該薄片;加工步驟,對晶圓的背面施予加工;以及剝離步驟,將該薄片從晶圓剝離。藉此,當將背面進行加工的加工步驟結束,即使從晶圓的正面剝離薄片,也可解決黏著層的一部分附著於突起電極而使元件的品質下降等的問題。另外,薄片與晶元之間因為置入有剝離層,固可從晶圓的正面輕易剝離熱壓著的薄片。
以下參閱隨附圖式,詳細說明本發明的晶圓加工方法的實施方式。
在圖1(a)中,表示由分割預定線12劃分成多個元件11並形成於正面10a之晶圓10。在本實施型態中,使晶圓10的該背面10b進行加工。
在實行本實施型態的晶圓加工方法之際,首先,準備在上述晶圓10、薄片14,以及晶圓10與薄片14之間配設的剝離層16。薄片14係以與晶圓10相同直徑以上的尺寸,從聚烯烴系薄片、或聚酯系薄片中選擇任一者,在本實施型態中選擇聚乙烯(PE)薄片。剝離層16係較晶圓10直徑小的圓形狀的薄片,且不具有黏著性的薄膜素材,例如選擇紙。再者,剝離層16並非限定於紙,亦可從布、糯米紙、聚醯亞胺薄片中選擇。
(晶圓配設步驟)
在實施晶圓配設步驟之際,首先,在作為實施後述熱壓著步驟的熱壓著裝置30(參閱圖2(a))之保持手段的支撐台20的上表面22中央鋪設薄片14。使支撐台20的上表面22以氟樹脂覆蓋,並且形成為平坦狀。進而,如圖2(a)所示,在支撐台20的內部內置電子加熱器24,其包含作為加熱手段的溫度感測器(省略圖示)。
回到圖1(a)繼續說明,在鋪設於支撐台20的上表面22之薄片14的上表面,鋪設剝離層16。在將剝離層16鋪設於薄片14之際,較佳為使薄片14的中心與剝離層16的中心對準。如上所述,薄片14係相對於晶圓10以相同直徑以上所形成,因為剝離層16係形成為較晶圓10直徑小,故在剝離層16的外側為薄片14的外周露出之狀態。
若在薄片14上鋪設剝離層16的話,則在鋪設了剝離層16的薄片14的上表面將晶圓10的正面10a定位並以背面10b向上方露出之方式配設。藉由以上完成晶圓配設步驟(參閱圖1(b))。
(薄片熱壓著步驟)
若上述的晶圓配設步驟結束的話,則接著實施薄片熱壓著步驟。薄片熱壓著步驟係透過薄片14及剝離層16將配設於支撐台20上的晶圓10在密閉環境內減壓而加熱薄片14,並按壓晶圓10將晶圓10的外周熱壓著於薄片14之步驟。一邊參閱圖2,一邊說明實施該薄片熱壓著步驟的熱壓著裝置30的功能與作用。
熱壓著裝置30係具備:支撐台20,內置上述的電子加熱器24;支撐基台32,載置固定有支撐台20;吸引孔34,形成於支撐基台32;以及密閉蓋構件36,用於將包含支撐台20的支撐基台32上的空間S作為密閉空間。再者,密閉蓋構件36雖係覆蓋支撐基台32的上表面整體的箱型構件,在表示熱壓著裝置30的側面圖的圖2(a)中,為了方便說明內部的構成,僅表示密閉蓋構件36的剖面。
於密閉蓋構件36的上壁36a的中央形成開口36b,該開口36b用於使按壓構件38的支撐軸38a貫穿並在箭頭Z所表示的上下方向進退。在開口36b的周圍使支撐軸38a在上下進退,且為了將密閉蓋構件36的空間S與外部遮斷作為密閉環境,形成有薄片構造36c。在支撐軸38a的下端配設有按壓板38b。按壓板38b係形成為至少較晶圓10大的直徑之圓盤形狀,較佳為設定成與支撐台20相同直徑程度的尺寸。在密閉蓋構件36的下端面,可配設遍及整個外周而彈性適宜的薄片構件(圖示省略)。另外,在按壓構件38的上方配設有用於使按壓構件38在上下方向進退的未圖示驅動手段。
藉由上述的晶圓配設步驟使晶圓10載置於包含支撐台20的支撐基台32上,使密閉蓋構件36下降,讓空間S為密閉環境。此時,按壓板38b如圖2所示,拉升至不接觸晶圓10的上表面之上方位置。
若形成於密閉蓋構件36的內部的空間S為密閉環境的話,則作動未圖示的吸引手段,透過吸引孔34吸引空間S的空氣,將包含晶圓10的區域減壓至接近真空的狀態。與此同時,作動內置於支撐台20的電子加熱器24,控制支撐台20的上表面22的溫度。具體而言,將構成薄片14的聚乙烯薄片加熱至接近熔融溫度附近的120至140℃。進而,作動未圖示的驅動手段使按壓板38b在箭頭Z所示方向下降,以均等的力按壓晶圓10的上表面整體。使容納晶圓10的空間S減壓至接近真空的狀態,從晶圓10、剝離層16以及薄片14的各對準面適當吸引而除去空氣。然後,使薄片14藉由加熱到上述的薄片14的熔融溫度附近(120至140℃)而軟化,並發揮黏著性,使晶圓10、剝離層16以及薄片14在如圖2(b)剖面圖所示的狀態下熱壓著。剝離層16係選擇即使加熱亦不會發揮黏著性的素材(紙),剝離層16的配設位置為大致真空狀態,並與晶圓10及薄片14在外周區域熱壓著。再者,此時藉由按壓板38b按壓晶圓10,藉此如圖2(b)所示,配設於晶圓10的正下方並在軟化的薄片14的外周***,形成圍繞晶圓10的外周的***部14a。如此一來,結束熱壓著步驟,晶圓10、薄片14、剝離層16成為一體而形成一體化晶圓W。
(加工步驟)
結束上述的熱壓著步驟,若形成一體化晶圓W的話,則實施將晶圓10的背面進行加工的加工步驟。本實施型態的加工步驟係實施研削背面10b的研削加工的步驟,一邊參閱圖3、圖4一邊進行具體說明。
在圖3中,表示有研削裝置50(僅表示局部)的卡盤台52,卡盤台52的上表面係由具有通氣性的多孔陶瓷所組成的吸附卡盤54所構成。在該吸附卡盤54上,將一體化晶圓W的薄片14側向下來載置。若在吸附卡盤54上載置一體化晶圓W的話,則作動連接卡盤台52的未圖示吸引手段,吸引保持一體化晶圓W。
如圖4所示,研削裝置50具備研削手段60,該研削手段60係用來將吸引保持於卡盤台52上的晶圓10的背面10b進行研削而薄化。研削手段60係具備:旋轉主軸62,藉由未圖示的旋轉驅動機構來旋轉;貼片機64,裝設於旋轉主軸62的下端;以及研削輪66,安裝於貼片機64的下表面;在研削輪66下表面環狀配設有多個研削磨石68。
若將一體化晶圓W保持吸引於卡盤台52上的話,則使研削手段60的旋轉主軸62在圖4中箭頭R1所示方向上以例如6000rpm旋轉,且使卡盤台52在圖4中箭頭R2所示方向上以例如300rpm旋轉。然後,藉由未圖示的研削水供給手段,將研削水供給於在一體化晶圓W的上表面露出的晶圓10,並且使研削磨石68接觸晶圓10的背面10b,將支撐研削磨石68的研削輪66以例如1µm/秒的研削進給速度向下方進行研削進給。此時,可一邊藉由未圖示的厚度檢測裝置測量晶圓10的厚度,一邊進行研削,將晶圓10的背面10b研削預定量,到達晶圓10的預定厚度(例如50µm),並停止研削手段60。如此,研削晶圓10的背面10b之加工步驟結束。如上所述,在本實施型態中,將晶圓10熱壓著於薄片14並支撐。藉此,薄片14發揮了保護膠膜的作用,防止傷及晶圓10的正面10a。進而,相對於晶圓10的薄片14發揮充分的保持力,即使對晶圓10的背面10b施予研削加工,晶圓10亦不會移動。
若將上述晶圓10的背面10b進行加工的加工步驟結束的話,則從研削裝置50搬出一體化晶圓W。如上所述,在研削裝置5的支撐台20的上表面22以氟樹脂覆蓋,即使藉由實施薄片熱壓著步驟在薄片14上發揮黏著力,仍可輕易從支撐台20的上表面22搬出一體化晶圓W。
(剝離步驟)
若從支撐台20搬出一體化晶圓W的話,則如圖5(a)所示,搬送至用來實施剝離步驟的保持手段70。保持手段70的上表面係與上述的卡盤台52相同,藉由具有通氣性的吸附卡盤72所形成,連接有未圖示的吸引手段。
搬送至保持手段70的一體化晶圓W係將晶圓10的背面10b側向下,將薄片14側朝向上方並載置於保持手段70的吸附卡盤72上。若在吸附卡盤72載置一體化晶圓W的話,則作動未圖示吸引手段,吸引保持一體化晶圓W。
若在保持手段70吸引保持一體化晶圓W的話,則如圖5(b)所示,一體化晶圓W之中,在將晶圓10留在保持手段70的狀態下,從晶圓10剝離薄片14及剝離層16。此時,較佳為加熱或冷卻一體化晶圓W。薄片14因為如上述一般以加熱而軟化,成為即使有黏著力亦能輕易從晶圓10剝離的狀態。另外,藉由冷卻,因為薄片14會硬化而黏著力下降,成為即使冷卻亦能輕易剝離的狀態。實施剝離步驟之際,關於應該實施加熱、冷卻的哪一者,可考慮構成薄片14的素材或是薄片14的黏著力等來選擇。藉由以上結束剝離步驟。
在本實施型態中,不使用液態樹脂、蠟、雙面膠等,而是將會藉由加熱發揮黏著力的薄片14黏貼於晶圓10。藉此,即使從晶圓10剝離薄片14,也不會發生在構成突起電極的凸塊周邊有液態樹脂、蠟、雙面膠的糊劑等的黏著屑附著而殘留的問題,不會使元件11的品質降低。進而,在晶圓10與薄片14之間,將較晶圓10直徑小的剝離層16在真空狀態下置入而僅熱壓著於外周,故在從晶圓10剝離薄片14的過程中空氣進入剝離層16的區域,可使熱壓著的薄片14更輕易從晶圓10剝離,提升作業性。
再者,在上述的實施型態中,雖由聚乙烯所構成薄片14,但本發明並不限定於此。作為不使用液態樹脂、雙面膠、蠟等而可熱壓著於晶圓10的薄片14,可從聚烯烴系薄片、聚酯系薄片中適當選擇。作為聚烯烴系薄片,可選擇上述的聚乙烯薄片以外的例如聚丙烯(PP)薄片或聚苯乙烯薄片(PS)。另外,作為聚酯系薄片,可選擇例如聚對苯二甲酸乙二醇酯(PET)薄片、聚萘二甲酸乙二醇酯(PEN)薄片。
在上述的實施型態中,雖將在薄片熱壓著步驟中加熱薄片14時的溫度設定為聚乙烯薄片的熔點附近的溫度(120至140℃),但如上所述,在選擇其他薄片來構成薄片14的情況,較佳為加熱至所選擇的薄片素材的熔點附近的溫度。舉例而言,較佳為以聚丙烯薄片構成薄片14的情況,將加熱時的溫度設定為160至180℃,以聚苯乙烯薄片構成薄片14的情況,將加熱時的溫度設定為220至240℃。另外,較佳為以聚對苯二甲酸乙二酯薄片構成薄片14的情況,將加熱時的溫度設定為250至270℃,以聚萘二甲酸乙二醇酯薄片構成薄片14的情況,將加熱時的溫度設定為160至180℃。
在上述的實施型態中,雖將剝離層16以圓形狀形成,並非必須為圓形,只要為較晶圓10直徑小,與晶圓10及薄片14可接著於外周區域的形狀皆可。
在上述的實施型態中,作為將晶圓10的背面10b進行加工的加工步驟,雖是以實施研削晶圓10的背面10b的研削加工的情況來說明,但本發明並不限定於此,只要實施將晶圓10的背面10b進行研磨的研磨步驟之技術皆適用。
另外,在上述的實施型態中,雖藉由如圖2所示的裝置實施熱壓著,但本發明並不限定於此,亦可使用具備未圖示的加熱手段之滾筒一邊按壓晶圓10側的整面,一邊將薄片加熱至期望溫度,實施在晶圓10熱壓著薄片14的薄片熱壓著步驟。再者,此時較佳為以氟樹脂覆蓋在滾筒的表面。
10:晶圓
11:元件
12:分割預定線
14:薄片
16:剝離層
20:支撐台
22:支撐台的上表面
24:電子加熱器(加熱手段)
30:熱壓著裝置
32:支撐基台
34:吸引孔
36:密閉蓋構件
38:按壓構件
38b:按壓板
50:研削裝置
52:卡盤台
60:研削手段
66:研削輪
68:研削磨石
70:保持手段
圖1係表示晶圓配置步驟的實施樣態之立體圖。
圖2(a)係實施薄片熱壓著步驟的熱壓著裝置之側面圖,圖2(b)係藉由薄片熱壓著步驟形成一體化晶圓之剖面圖。
圖3係表示在實施加工步驟的研削裝置的卡盤台上載置一體化晶圓的態樣之立體圖。
圖4係表示使用研削裝置的研削加工的實施態樣之立體圖。
圖5(a)係表示在剝離用的保持手段載置一體化晶圓的態樣之立體圖,圖5(b)係表示從晶圓剝離薄片的剝離步驟的實施態樣之立體圖。
10:晶圓
10b:晶圓的背面
14:薄片
14a:***部
16:剝離層
20:支撐台
24:電子加熱器(加熱手段)
32:支撐基台
34:吸引孔
36:密閉蓋構件
36a:上壁
36b:開口
36c:薄片構造
38:按壓構件
38a:支撐軸
38b:按壓板
S:空間
W:一體化晶圓
Claims (10)
- 一種晶圓加工方法,將由分割預定線劃分成多個元件並形成於正面之晶圓的背面進行加工,該晶圓加工方法至少由下述步驟所構成: 晶圓配設步驟,在上表面形成為平坦狀的支撐台的該上表面,鋪設與晶圓的形狀相等以上大小的聚烯烴系薄片或聚酯系薄片中任一種的薄片,並且在該薄片的上表面鋪設較晶圓直徑小的剝離層,將晶圓的正面定位於該薄片的上表面; 薄片熱壓著步驟,透過該薄片及該剝離層將配設於該支撐台的晶圓在密閉環境內減壓而加熱該薄片,並按壓晶圓將晶圓的外周熱壓著於該薄片; 加工步驟,對晶圓的背面施予加工;以及 剝離步驟,將該薄片從晶圓剝離。
- 如申請專利範圍第1項所載之晶圓加工方法,其中,該剝離層包含紙、布、糯米紙或聚醯亞胺薄片中至少任一者。
- 如申請專利範圍第1或2項所載之晶圓加工方法,其中,該支撐台包含加熱手段,在該薄片熱壓著步驟中,使該支撐台藉由該加熱手段加熱。
- 如申請專利範圍第3項所載之晶圓加工方法,其中,該支撐台的上表面以氟樹脂覆蓋。
- 如申請專利範圍第1或2項所載之晶圓加工方法,其中,在該加工步驟中,實施研削晶圓的背面之研削加工。
- 如申請專利範圍第1或2項所載之晶圓加工方法,其中,聚烯烴系薄片係由聚乙烯薄片,聚丙烯薄片或聚苯乙烯薄片中的任一者所構成。
- 如申請專利範圍第6項中所載之晶圓加工方法,其中,在該薄片熱壓著步驟中,該聚乙烯薄片的加熱溫度為120至140℃,該聚丙烯薄片的加熱溫度為160至180℃,該聚苯乙烯薄片的加熱溫度為220至240℃。
- 如申請專利範圍第1或2項所載之晶圓加工方法,其中,該聚酯系薄片係由聚對苯二甲酸乙二醇酯薄片、聚萘二甲酸乙二醇酯薄片中的任一者所構成。
- 如申請專利範圍第8項中所載之晶圓加工方法,其中,在該薄片熱壓著步驟中,該聚對苯二甲酸乙二醇酯薄片的加熱溫度為250至270℃,該聚萘二甲酸乙二醇酯薄片的加熱溫度為160至180℃。
- 如申請專利範圍第1或2項所載之晶圓加工方法,其中,在該薄片熱壓著步驟中,該薄片圍繞晶圓並以***之方式按壓晶圓。
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JP2014088523A (ja) * | 2012-10-31 | 2014-05-15 | Nitto Denko Corp | 半導体装置製造用接着シート及び半導体装置の製造方法 |
JP6219196B2 (ja) * | 2014-02-26 | 2017-10-25 | リンテック株式会社 | シート貼付方法および貼付装置 |
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CN111063608A (zh) | 2020-04-24 |
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