TWI821315B - Methods for manufacturing resin films, conductive films and laminated films - Google Patents

Abstract

本發明提供一種即便經由真空製程亦能抑制膜污染之樹脂膜及使用其而獲得之導電性膜、以及積層膜之製造方法。一種樹脂膜，其包含於大氣壓下之沸點或熱分解點為285℃以下之抗氧化劑。上述抗氧化劑之於1.3 Pa之真空下之沸點或熱分解點較佳為50℃以下。The present invention provides a resin film that can suppress film contamination even through a vacuum process, a conductive film obtained using the resin film, and a method for manufacturing a laminated film. A resin film containing an antioxidant whose boiling point or thermal decomposition point is 285°C or lower under atmospheric pressure. The boiling point or thermal decomposition point of the above-mentioned antioxidant under a vacuum of 1.3 Pa is preferably 50°C or lower.

Description

樹脂膜、導電性膜及積層膜之製造方法Methods for manufacturing resin films, conductive films and laminated films

本發明係關於一種樹脂膜、導電性膜及積層膜之製造方法。The present invention relates to a method for manufacturing a resin film, a conductive film and a laminated film.

先前，於樹脂膜之表面形成有導電層之導電性膜被用於柔性電路基板、電磁波屏蔽膜、平板顯示器、接觸式傳感器、非接觸式IC卡、太陽能電池等。導電性膜之主要功能係導電，以獲得符合用途目的之導電性之方式適宜選擇設置於樹脂膜之表面之導電層之組成、或厚度。導電層之形成廣泛採用以濺鍍為代表之真空製程(專利文獻1)。 [先前技術文獻] [專利文獻]Previously, conductive films with a conductive layer formed on the surface of a resin film have been used for flexible circuit substrates, electromagnetic wave shielding films, flat panel displays, contact sensors, non-contact IC cards, solar cells, etc. The main function of the conductive film is to conduct electricity. In order to obtain conductivity that meets the purpose of use, the composition or thickness of the conductive layer provided on the surface of the resin film should be appropriately selected. The conductive layer is formed by a vacuum process represented by sputtering (Patent Document 1). [Prior technical literature] [Patent Document]

[專利文獻1]日本專利特開平2009-249688號公報[Patent Document 1] Japanese Patent Application Laid-Open No. 2009-249688

[發明所欲解決之問題][Problem to be solved by the invention]

然而，明確尤其於藉由真空製程成膜後有時膜之表面被污染。對於被污染之膜，即便進行成膜，有時亦無法獲得期望之膜。另外，有如下之虞：於利用輥對輥法進行成膜時污染物質附著於膜捲取、或輸送用之輥上，或於將被污染之膜捲取成卷狀時污染物質亦會附著於其他部位，經過真空製程而形成薄膜之積層膜之製造之成品率下降。However, it is clear that the surface of the film is sometimes contaminated, especially after film formation through a vacuum process. For a contaminated membrane, even if the film is formed, the desired film may not be obtained. In addition, there is a risk that contaminants may adhere to film winding or conveying rollers when film is formed using the roll-to-roll method, or that contaminants may adhere when the contaminated film is wound into a roll. In other areas, the manufacturing yield of laminated films that form thin films through vacuum processes has decreased.

本發明之目的在於提供一種即便經由真空製程亦能抑制膜污染之樹脂膜及使用其而獲得之導電性膜、以及積層膜之製造方法。 [解決問題之技術手段]An object of the present invention is to provide a resin film that can suppress film contamination even through a vacuum process, a conductive film obtained using the resin film, and a method for manufacturing a laminated film. [Technical means to solve problems]

本發明者等人為了解決上述課題而進行深入研究，結果獲得如下見解：膜之污染可能係由於膜中所包含之添加劑於真空下滲出所引起。進行進一步研究，結果發現藉由採用下述構成而能實現上述目的，從而完成本發明。The present inventors conducted in-depth research in order to solve the above-mentioned problems, and as a result obtained the following knowledge: The fouling of the membrane may be caused by the additives contained in the membrane exuding under vacuum. As a result of further research, it was found that the above object can be achieved by adopting the following structure, and the present invention was completed.

本發明中，於一實施形態中，關於一種樹脂膜，其包含於大氣壓下之沸點或熱分解點為285℃以下之抗氧化劑。In one embodiment, the present invention relates to a resin film containing an antioxidant whose boiling point or thermal decomposition point under atmospheric pressure is 285°C or lower.

藉由使用於大氣壓下之沸點或熱分解點(以下亦稱為「沸點等」)比較低之抗氧化劑，從而於真空下之沸點等亦降低。該樹脂膜中，即便於真空製程中抗氧化劑於膜表面滲出，沸點等較低之抗氧化劑亦會蒸發或分解並自表面擴散，能夠抑制樹脂膜表面之污染。其結果，能夠於樹脂膜上形成期望之薄膜，且能夠防止污染物質附著至樹脂膜之其他部位、或輥上，能夠提高薄膜形成之成品率。抗氧化劑之沸點等超過上述範圍時，變得難以發生自樹脂膜表面之擴散，而有樹脂膜仍會被污染之虞。By using an antioxidant that has a relatively low boiling point or thermal decomposition point (hereinafter also referred to as "boiling point, etc.") under atmospheric pressure, the boiling point, etc. under vacuum is also reduced. In this resin film, even if antioxidants seep out on the film surface during the vacuum process, antioxidants with lower boiling points will evaporate or decompose and diffuse from the surface, which can inhibit contamination on the surface of the resin film. As a result, a desired thin film can be formed on the resin film, contaminants can be prevented from adhering to other parts of the resin film or the roller, and the yield of thin film formation can be improved. When the boiling point of the antioxidant exceeds the above range, diffusion from the surface of the resin film becomes difficult, and the resin film may still be contaminated.

一般而言，為了防止膜之污染，可採用如下方案：使用高分子量之抗氧化劑、或使用與樹脂之親和性較高之抗氧化劑，儘可能地抑制抗氧化劑滲出至膜表面。相對於此，本發明基於如下新型之概念：允許抗氧化劑滲出至膜表面，且藉由採用低沸點等之抗氧化劑而使其積極地自表面擴散以實現防污染。Generally speaking, in order to prevent membrane fouling, the following solutions can be adopted: use high molecular weight antioxidants, or use antioxidants with higher affinity to the resin to suppress antioxidants from seeping to the membrane surface as much as possible. In contrast, the present invention is based on a novel concept of allowing antioxidants to permeate to the membrane surface, and using antioxidants with low boiling points and the like to actively diffuse them from the surface to prevent contamination.

上述抗氧化劑之於1.3 Pa之真空下之沸點或熱分解點較佳為50℃以下。由此能夠進而促進抗氧化劑於真空下之擴散，能夠提高樹脂膜之清潔度。The boiling point or thermal decomposition point of the above-mentioned antioxidant under a vacuum of 1.3 Pa is preferably 50°C or lower. This can further promote the diffusion of antioxidants under vacuum and improve the cleanliness of the resin film.

本發明於一實施形態中，關於一種基材膜，其具備該樹脂膜。In one embodiment, the present invention relates to a base film provided with the resin film.

本發明於一實施形態中，關於一種保護膜，其具備該樹脂膜。In one embodiment, the present invention relates to a protective film provided with the resin film.

本發明於一實施形態中，關於一種導電性膜，其具備： 該基材膜、及 配置於上述基材膜之一面側之導電層。In one embodiment, the present invention relates to a conductive film, which includes: the base film, and A conductive layer disposed on one side of the base film.

該導電性膜由於使用於真空下之污染得到抑制之基材膜，因此能夠成品率良好地製作形成期望之導電層之導電性膜。Since this conductive film is used as a base film in which contamination under vacuum is suppressed, it is possible to produce a conductive film that forms a desired conductive layer with good yield.

上述基材膜之厚度較佳為50 μm以上且250 μm以下。由此使利用輥對輥法之操作變得容易。比上述下限值更薄時，會發生由於在濺鍍時施加之溫度而產生膜變形之類之風險，或比上述上限值更厚時，會發生低聚物等膜添加劑之滲出增多之類之風險。The thickness of the base film is preferably 50 μm or more and 250 μm or less. This makes operation using the roll-to-roll method easy. If it is thinner than the above lower limit, there is a risk of film deformation due to the temperature applied during sputtering, and if it is thicker than the above upper limit, there is a risk of increased bleeding of film additives such as oligomers. Such risks.

上述基材膜之形成材料可為聚酯系樹脂或環烯烴系樹脂。即便為常用作基材膜之形成材料之該等樹脂，亦能夠有效地防止由抗氧化劑所致之污染。The material for forming the base film may be polyester resin or cycloolefin resin. Even these resins, which are commonly used as materials for forming substrate films, can effectively prevent contamination caused by antioxidants.

本發明於一實施形態中，關於一種導電性膜，其具備： 基材膜、 配置於上述基材膜之一面側之導電層、及 配置於上述導電層之與上述基材膜側相反之側及上述基材膜之另一面側中之至少一者之該保護膜。In one embodiment, the present invention relates to a conductive film, which includes: base film, a conductive layer disposed on one side of the above-mentioned base film, and The protective film is disposed on at least one of the side opposite to the base film side of the conductive layer and the other side of the base film.

藉此能夠防止由抗氧化劑所致之保護膜之污染，能夠有效地製造清潔度較高之導電性膜。特別是，作為於基材膜之兩面形成導電層之方法，有時採用如下步驟：於基材膜之一面側形成導電層，於其上配置保護膜後，於基材膜之另一面側形成導電層這樣之步驟。於該步驟中，儘管於形成另一面側之導電層時，保護膜供於真空製程，但由於使用低污染性之保護膜，因此能夠清潔且有效地製造兩面導電性膜。This can prevent contamination of the protective film caused by antioxidants and effectively produce a conductive film with higher cleanliness. In particular, as a method of forming conductive layers on both sides of a base film, the following steps may be used: forming a conductive layer on one side of the base film, disposing a protective film thereon, and then forming a conductive layer on the other side of the base film. Conductive layer such steps. In this step, although the protective film is used in a vacuum process when forming the conductive layer on the other side, the double-sided conductive film can be manufactured cleanly and efficiently due to the use of a low-contamination protective film.

上述基材膜可為本發明之一實施形態之基材膜。由此基材膜及保護膜中之任意者均能夠防止由抗氧化劑所致之污染，能使導電性膜之生產率及清潔度之雙方成為較高之水平。The above-mentioned base film may be the base film according to one embodiment of the present invention. As a result, both the base film and the protective film can prevent contamination caused by antioxidants, and can achieve higher levels of both productivity and cleanliness of the conductive film.

上述保護膜之厚度較佳為5 μm以上且55 μm以下。即便為此種範圍之較薄之保護膜，亦能夠充分地防止由抗氧化劑所致之污染，且能夠實現導電性膜之薄型化。The thickness of the above-mentioned protective film is preferably 5 μm or more and 55 μm or less. Even a relatively thin protective film in this range can fully prevent contamination caused by antioxidants and can achieve thinning of the conductive film.

上述保護膜之形成材料可為烯烴系樹脂、聚酯系樹脂或環烯烴系樹脂。即便為常用作保護膜之形成材料之該等樹脂，亦能夠有效地防止由抗氧化劑所致之污染。The protective film may be formed from an olefin resin, a polyester resin or a cycloolefin resin. Even these resins, which are commonly used as materials for forming protective films, can effectively prevent contamination caused by antioxidants.

上述保護膜之與鄰接層接觸之側之面具有黏著性，上述保護膜與上述鄰接層之間之剝離力較佳為1 N/50 mm以下。藉由將保護膜與鄰接層之間之剝離力設為上述範圍，從而能夠實現剝離步驟中之保護膜之順利剝離。The surface of the protective film in contact with the adjacent layer is adhesive, and the peeling force between the protective film and the adjacent layer is preferably 1 N/50 mm or less. By setting the peeling force between the protective film and the adjacent layer within the above range, smooth peeling of the protective film in the peeling step can be achieved.

上述導電層較佳為濺鍍膜。為了獲得低電阻之導電層而較佳藉由濺鍍來形成緻密層。即便藉由要求更嚴苛之真空條件之濺鍍來形成導電層，亦能夠防止基材膜、或保護膜之污染。The above-mentioned conductive layer is preferably a sputtered film. In order to obtain a conductive layer with low resistance, it is preferable to form a dense layer by sputtering. Even if the conductive layer is formed by sputtering under more stringent vacuum conditions, contamination of the base film or protective film can be prevented.

本發明於一實施形態中，關於一種積層膜之製造方法，其包括如下步驟： 準備該基材膜、或貼合有該保護膜之基材膜之步驟；及 於上述基材膜之至少一面側藉由真空製程形成薄膜之步驟。In one embodiment, the present invention relates to a method for manufacturing a laminated film, which includes the following steps: The steps of preparing the base film or the base film laminated with the protective film; and A step of forming a thin film on at least one side of the base film by a vacuum process.

於該製造方法中，由於供於真空製程之基材膜或保護膜為低污染性，因此能夠以較高水平實現薄膜形成之效率化、基材膜、或保護膜、輥之防污染，能夠提高積層膜於整個製造製程中之成品率。In this manufacturing method, since the base film or protective film used in the vacuum process has low contamination properties, it is possible to achieve a higher level of efficiency in thin film formation, prevention of contamination of the base film, protective film, and roller, and Improve the yield of laminated films in the entire manufacturing process.

於一實施形態中，上述真空製程可為濺鍍。即便藉由要求更嚴苛之真空條件之濺鍍來形成膜，亦能夠防止樹脂膜之污染。In one embodiment, the vacuum process may be sputtering. Even if the film is formed by sputtering that requires more stringent vacuum conditions, contamination of the resin film can be prevented.

於一實施形態中，上述薄膜可為導電層。即便於要求基於濺鍍來形成低電阻之導電層之情形時，亦能夠提高樹脂膜之清潔度且提高積層膜之生產效率。In one embodiment, the above-mentioned thin film can be a conductive layer. Even when it is required to form a low-resistance conductive layer by sputtering, the cleanliness of the resin film can be improved and the production efficiency of the laminated film can be improved.

以下一面參照附圖一面對本發明之一實施形態之樹脂膜及導電性膜進行說明。於圖之一部分或全部中，省略不需要說明之部分，此外，存在為了容易說明而進行放大或縮小等來圖示之部分。表示上下等位置關係之術語僅僅係為了容易進行說明而使用，完全未意圖限定本發明之構成。The resin film and conductive film according to one embodiment of the present invention will be described below with reference to the drawings. In some or all of the drawings, portions that do not require explanation are omitted, and some portions are enlarged or reduced for ease of explanation. Terms indicating positional relationships such as upper and lower are used merely for ease of description and are not intended to limit the structure of the present invention at all.

＜樹脂膜＞ 圖1係本發明之一實施形態之樹脂膜之模式剖視圖。樹脂膜10包含於大氣壓下之沸點或熱分解點為285℃以下之抗氧化劑。藉由使用沸點等較低之抗氧化劑，從而即便於真空製程中抗氧化劑於樹脂膜之表面滲出，亦能夠促進其擴散並防止表面之污染。＜Resin film＞ Fig. 1 is a schematic cross-sectional view of a resin film according to an embodiment of the present invention. The resin film 10 contains an antioxidant whose boiling point or thermal decomposition point is 285° C. or lower under atmospheric pressure. By using antioxidants with lower boiling points, even if the antioxidant seeps out on the surface of the resin film during the vacuum process, it can promote its diffusion and prevent surface contamination.

(抗氧化劑) 作為抗氧化劑，只要於大氣壓下之沸點或熱分解點為285℃以下則無特別限定，可列舉調配於合成樹脂中之先前公知之抗氧化劑。例如可使用：受阻酚系抗氧化劑、胺系抗氧化劑、內酯系抗氧化劑、羥胺系抗氧化劑等一次抗氧化劑(Primary antioxidant)；及硫系抗氧化劑、或磷系抗氧化劑等二次抗氧化劑(Secondary antioxidant)等。(antioxidant) The antioxidant is not particularly limited as long as its boiling point or thermal decomposition point under atmospheric pressure is 285° C. or lower. Examples thereof include conventionally known antioxidants blended into synthetic resins. For example, primary antioxidants such as hindered phenol antioxidants, amine antioxidants, lactone antioxidants, and hydroxylamine antioxidants; and secondary antioxidants such as sulfur antioxidants or phosphorus antioxidants can be used. (Secondary antioxidant) etc.

該等抗氧化劑可單獨使用或併用2種以上。特別藉由組合使用受阻酚系抗氧化劑、胺系抗氧化劑、內酯系抗氧化劑、羥胺系抗氧化劑等一次抗氧化劑與硫系抗氧化劑、或磷系抗氧化劑等二次抗氧化劑，從而可發揮優異之耐候性、或耐熱性。These antioxidants can be used individually or in combination of 2 or more types. In particular, primary antioxidants such as hindered phenol-based antioxidants, amine-based antioxidants, lactone-based antioxidants, and hydroxylamine-based antioxidants are used in combination with secondary antioxidants such as sulfur-based antioxidants or phosphorus-based antioxidants. Excellent weather resistance or heat resistance.

作為抗氧化劑之含量，並無特別限制，可於能夠獲得期望之抗氧化效果之範圍內進行適宜設定。The content of the antioxidant is not particularly limited and can be appropriately set within the range in which the desired antioxidant effect can be obtained.

(樹脂) 就作為樹脂膜10之主要成分之樹脂材料及針對樹脂膜10之處理而言，可根據樹脂膜10之用途進行適宜變更。以下分別對將樹脂膜10用作基材膜之情形及將樹脂膜10用作保護膜之情形進行說明。(resin) The resin material that is the main component of the resin film 10 and the treatment of the resin film 10 can be appropriately changed according to the use of the resin film 10 . The case where the resin film 10 is used as a base film and the case where the resin film 10 is used as a protective film will be described below respectively.

(基材膜) 樹脂膜10可適宜地用作基材膜。基材膜係成為形成有各種膜、或功能層之積層膜之強度基底之膜。於將積層膜裝入顯示元件、或傳感器元件等中之情形時，基材膜亦原樣滯留於其中。基材膜可僅具備樹脂膜10，亦可以除了樹脂膜10以外具備其他層等。(Substrate film) The resin film 10 can be suitably used as a base film. The base film is a film that serves as a strong base for a laminated film on which various films or functional layers are formed. When the laminated film is incorporated into a display element, a sensor element, or the like, the base film remains there as it is. The base film may include only the resin film 10 or may include other layers in addition to the resin film 10 .

作為基材膜之形成材料，並無特別限定，例如可列舉：聚對苯二甲酸乙二酯(PET)、聚對苯二甲酸丁二酯(PBT)、聚萘二甲酸乙二酯(PEN)等聚酯系樹脂、聚醯亞胺(PI)等聚醯亞胺系樹脂、聚乙烯(PE)、聚丙烯(PP)等聚烯烴系樹脂、乙酸酯系樹脂、聚醚碸系樹脂、聚碳酸酯系樹脂、聚醯胺系樹脂、環烯烴系樹脂、(甲基)丙烯酸系樹脂、聚氯乙烯系樹脂、聚偏氯乙烯系樹脂、聚苯乙烯系樹脂、聚乙烯醇系樹脂、聚芳酯系樹脂、聚苯硫醚系樹脂等。該等之中，就耐熱性、耐久性、柔軟性、生產效率、成本等觀點而言，較佳為聚對苯二甲酸乙二酯(PET)、聚萘二甲酸乙二酯(PEN)等聚酯系樹脂、聚醯亞胺(PI)等聚醯亞胺系樹脂。特別是就性價比之觀點而言，較佳為聚對苯二甲酸乙二酯(PET)。The material for forming the base film is not particularly limited, and examples thereof include polyethylene terephthalate (PET), polybutylene terephthalate (PBT), and polyethylene naphthalate (PEN). ) and other polyester-based resins, polyimide-based resins such as polyimide (PI), polyolefin-based resins such as polyethylene (PE), polypropylene (PP), acetate-based resins, and polyether-based resins , polycarbonate resin, polyamide resin, cycloolefin resin, (meth)acrylic resin, polyvinyl chloride resin, polyvinylidene chloride resin, polystyrene resin, polyvinyl alcohol resin , polyarylate resin, polyphenylene sulfide resin, etc. Among these, polyethylene terephthalate (PET), polyethylene naphthalate (PEN), etc. are preferred from the viewpoints of heat resistance, durability, flexibility, production efficiency, cost, etc. Polyester-based resin, polyimide-based resin such as polyimide (PI). In particular, from the viewpoint of cost performance, polyethylene terephthalate (PET) is preferred.

基材膜可無延伸地使用，亦可根據需要使用實施單軸或雙軸延伸處理而成者。The base film may be used without stretching, or may be subjected to uniaxial or biaxial stretching as needed.

對於基材膜，可於追加之膜、或功能層之配置或形成之前，對表面預先實施濺鍍、電暈放電、火焰、紫外線照射、電子束照射、化學轉化、氧化等蝕刻處理、或底塗處理，以確保與形成於基材膜上之薄膜等之密接性。另外，於形成薄膜等之前，亦可根據需要藉由溶劑清洗、或超音波清洗等對基材膜表面進行除塵、淨化。For the base film, before the additional film or functional layer is arranged or formed, the surface can be subjected to etching treatment such as sputtering, corona discharge, flame, ultraviolet irradiation, electron beam irradiation, chemical conversion, oxidation, etc., or primer treatment. Coating treatment to ensure adhesion with the film formed on the base film. In addition, before forming a thin film, etc., the surface of the base film can also be dusted and purified by solvent cleaning, ultrasonic cleaning, etc. as needed.

基材膜之厚度較佳為50 μm以上且250 μm以下之範圍內，更佳為80 μm以上且200 μm以下之範圍內，進而較佳為100 μm以上且180 μm以下之範圍內。通常，基材膜之厚度較厚時不易受到加熱時之熱收縮等之影響，因此較理想。然而，由於電子零件等之小型化，期望基材膜之厚度亦進行某種程度之減薄。另一方面，基材膜之厚度變得過薄時，基材膜之透濕性、或透過性上升，而使水分、或氣體等透過，導電層等薄膜容易被氧化。因此，本實施形態中，藉由使基材膜之厚度具有某種程度之厚度並減薄，而使積層膜(例如，導電性膜等)自身亦能夠減薄，能夠抑制用於電磁波屏蔽片、或傳感器等時之厚度。因此，能夠應對電磁波屏蔽片、或傳感器等之薄型化。進而，基材膜之厚度在上述之範圍內時，能夠確保基材膜之柔軟性且機械強度充分，能夠實現使膜成為卷狀並連續地形成基底層、或導電層之操作。The thickness of the base film is preferably in the range of 50 μm to 250 μm, more preferably 80 μm to 200 μm, and further preferably 100 μm to 180 μm. Generally, a thick base film is preferable because it is less susceptible to thermal shrinkage during heating. However, due to the miniaturization of electronic components and the like, it is expected that the thickness of the base film is also reduced to some extent. On the other hand, when the thickness of the base film becomes too thin, the moisture permeability or permeability of the base film increases, allowing moisture, gas, etc. to pass through, and thin films such as conductive layers are easily oxidized. Therefore, in this embodiment, by making the thickness of the base film thin to a certain extent, the laminated film (for example, conductive film, etc.) itself can also be thinned, and the use of the electromagnetic wave shielding sheet can be suppressed. , or the thickness of the sensor. Therefore, it is possible to reduce the thickness of electromagnetic wave shielding sheets, sensors, etc. Furthermore, when the thickness of the base film is within the above range, flexibility and sufficient mechanical strength of the base film can be ensured, and the operation of rolling the film into a roll shape and continuously forming a base layer or a conductive layer can be realized.

(保護膜) 樹脂膜10亦可適宜地用作保護膜。保護膜係為了增強薄型基材膜之強度而提高操作性、或為了防止形成於基材膜上之薄膜之氧化、或損傷而設置。因此，主要在積層膜之製造過程及保管過程中暫時設置保護膜之情況較多，於將積層膜裝入顯示元件、或傳感器元件等中時，剝離並去除保護膜之情況較多。當然，亦可根據設計將保護膜直接裝入元件中等。保護膜可僅具備樹脂膜10，亦可除了樹脂膜10以外具備其他層等。(protective film) The resin film 10 can also be suitably used as a protective film. The protective film is provided to enhance the strength of the thin base film to improve operability, or to prevent oxidation or damage of the thin film formed on the base film. Therefore, the protective film is often temporarily provided mainly during the manufacturing process and storage process of the laminated film. When the laminated film is installed in a display element, a sensor element, etc., the protective film is often peeled off and removed. Of course, the protective film can also be directly installed into the component according to the design. The protective film may include only the resin film 10 or may include other layers in addition to the resin film 10 .

作為保護膜之材質及結構，並無特別限定，理想為具有：含有聚烯烴系樹脂之基材層及含有熱塑性彈性體之黏著層。保護膜以黏著層與鄰接層(基材膜、或基底層、導電層等薄膜)側對向之方式來配置。作為形成黏著層之材料，亦可使用可再剝離之丙烯酸系黏著劑等公知之黏著劑。The material and structure of the protective film are not particularly limited, but it is ideal to have a base material layer containing a polyolefin-based resin and an adhesive layer containing a thermoplastic elastomer. The protective film is arranged so that the adhesive layer and the adjacent layer (base film, base layer, conductive layer and other thin films) face each other. As a material for forming the adhesive layer, a known adhesive such as a releasable acrylic adhesive can also be used.

對形成上述基材層之聚烯烴系樹脂並無特別限制，例如可例示聚丙烯或包含丙烯成分及乙烯成分之嵌段系、無規系等丙烯系聚合物；低密度、高密度、線性低密度聚乙烯等乙烯系聚合物；環烯烴系聚合物；乙烯-α烯烴共聚物等烯烴系聚合物、乙烯-乙酸乙烯酯共聚物、乙烯-甲基丙烯酸甲酯共聚物等乙烯成分與其他單體之烯烴系聚合物等。該等聚烯烴系樹脂可單獨使用1種或使用2種以上。可對包含該等材料之膜進行單軸延伸或雙軸延伸。The polyolefin-based resin forming the above-mentioned base material layer is not particularly limited. Examples thereof include polypropylene or propylene-based polymers such as block type and random type including propylene components and ethylene components; low density, high density, low linearity Density polyethylene and other ethylene polymers; cyclic olefin polymers; olefin polymers such as ethylene-α olefin copolymers, ethylene-vinyl acetate copolymers, ethylene-methyl methacrylate copolymers and other ethylene components and other monomers Body olefin polymers, etc. These polyolefin resins can be used individually by 1 type or in 2 or more types. Films containing these materials can be uniaxially or biaxially stretched.

上述基材層含有烯烴系樹脂作為主要成分，除了特定之抗氧化劑以外，亦可適宜調配例如抗靜電劑、填充劑(氧化鈣、氧化鎂、二氧化矽、氧化鋅、氧化鈦等)、顏料、防積料劑、潤滑劑、抗黏連劑等添加劑。The above-mentioned base material layer contains an olefin-based resin as a main component. In addition to specific antioxidants, antistatic agents, fillers (calcium oxide, magnesium oxide, silicon dioxide, zinc oxide, titanium oxide, etc.), pigments, etc. may also be appropriately blended. , anti-accumulation agent, lubricant, anti-adhesion agent and other additives.

基材層之厚度並無特別限制，較佳為18 μm以上，進而較佳為20 μm以上。另一方面，基材層之厚度較佳為30 μm以下，更佳為25 μm以下。另外，基材層可為單層或為包含兩層以上之多層。The thickness of the base material layer is not particularly limited, but is preferably 18 μm or more, and more preferably 20 μm or more. On the other hand, the thickness of the base material layer is preferably 30 μm or less, more preferably 25 μm or less. In addition, the base material layer may be a single layer or a multi-layer including two or more layers.

再者，亦可根據需要對基材層之與黏著層附設面相反之面實施例如電暈放電處理、火焰處理、電漿處理、或濺鍍蝕刻處理、底漆等底塗處理等表面處理。Furthermore, if necessary, the surface of the base material layer opposite to the surface where the adhesive layer is attached may be subjected to surface treatment such as corona discharge treatment, flame treatment, plasma treatment, sputter etching treatment, primer treatment such as primer, etc.

作為形成黏著層之熱塑性彈性體，可無特別限制地使用苯乙烯系彈性體、胺基甲酸酯系彈性體、酯系彈性體、烯烴系彈性體等用作黏著劑之基礎聚合物之彈性體。更具體而言，可列舉：苯乙烯・丁二烯・苯乙烯(SBS)、苯乙烯・異戊二烯・苯乙烯(SIS)、苯乙烯・乙烯-丁烯共聚物・苯乙烯(SEBS)、苯乙烯・乙烯-丙烯共聚物・苯乙烯(SEPS)等A-B-A型嵌段聚合物；苯乙烯・丁二烯(SB)、苯乙烯・異戊二烯(SI)、苯乙烯・乙烯-丁烯共聚物(SEB)、苯乙烯・乙烯-丙烯共聚物(SEP)等A-B型嵌段聚合物；苯乙烯・丁二烯橡膠(SBR)等苯乙烯系無規共聚物；苯乙烯・乙烯-丁烯共聚物・烯烴晶體(SEBC)等A-B-C型苯乙烯・烯烴晶體系嵌段聚合物；烯烴晶體・乙烯-丁烯共聚物・烯烴晶體(CEBC)等C-B-C型烯烴晶體系嵌段聚合物；乙烯-α烯烴、乙烯-丙烯-α烯烴、丙烯-α烯烴等烯烴系彈性體、以及該等之氫化物等。該等熱塑性彈性體可單獨使用1種或使用2種以上。As the thermoplastic elastomer forming the adhesive layer, the elasticity of the base polymer used as the adhesive, such as styrene elastomer, urethane elastomer, ester elastomer, olefin elastomer, etc., can be used without particular limitation. body. More specifically, examples include: styrene, butadiene, styrene (SBS), styrene, isoprene, styrene (SIS), styrene, ethylene-butylene copolymer, styrene (SEBS) , styrene/ethylene-propylene copolymer/styrene (SEPS) and other A-B-A block polymers; styrene/butadiene (SB), styrene/isoprene (SI), styrene/ethylene-butadiene A-B block polymers such as ethylene copolymer (SEB) and styrene-ethylene-propylene copolymer (SEP); styrene-based random copolymers such as styrene-butadiene rubber (SBR); styrene-ethylene- A-B-C type styrene and olefin crystal block polymers such as butene copolymer and olefin crystal (SEBC); C-B-C type olefin crystal block polymers such as olefin crystal and ethylene-butene copolymer and olefin crystal (CEBC); Olefin elastomers such as ethylene-α olefin, ethylene-propylene-α olefin, propylene-α olefin, and their hydrogenated products, etc. These thermoplastic elastomers may be used individually by 1 type or in 2 or more types.

於黏著層之形成時，以黏著特性之控制等為目的，可根據需要於上述熱塑性彈性體中適宜調配例如軟化劑、烯烴系樹脂、矽氧系聚合物、液狀丙烯酸系共聚物、磷酸酯系化合物、增黏劑、防老化劑、受阻胺系光穩定劑、紫外線吸收劑、其他例如氧化鈣、氧化鎂、二氧化矽、氧化鋅、氧化鈦等填充劑、或顏料等添加劑。When forming the adhesive layer, for the purpose of controlling the adhesive properties, etc., softeners, olefin resins, silicone polymers, liquid acrylic copolymers, and phosphate esters can be appropriately blended into the above-mentioned thermoplastic elastomer as needed. Compounds, tackifiers, anti-aging agents, hindered amine light stabilizers, UV absorbers, other fillers such as calcium oxide, magnesium oxide, silicon dioxide, zinc oxide, titanium oxide and other fillers, or pigments and other additives.

黏著層之厚度並無特別限定，根據所要求之密接力等來適宜決定即可，通常為0.1 μm左右，較佳為0.2 μm以上，進而較佳為0.3 μm以上。黏著層之厚度較佳為20 μm以下，更佳為10 μm以下，進而較佳為5 μm以下。The thickness of the adhesive layer is not particularly limited and can be appropriately determined according to the required adhesion force, etc., but it is usually about 0.1 μm, preferably 0.2 μm or more, and further preferably 0.3 μm or more. The thickness of the adhesive layer is preferably 20 μm or less, more preferably 10 μm or less, further preferably 5 μm or less.

再者，亦可根據需要對黏著層之表面實施例如電暈放電處理、紫外線照射處理、火焰處理、電漿處理、或濺鍍蝕刻處理等以黏著性之控制、或貼附操作性等為目的之表面處理。進而亦可根據需要於供於實用之前之期間於黏著層上臨時黏接隔離膜等進行保護。Furthermore, the surface of the adhesive layer can also be subjected to corona discharge treatment, ultraviolet irradiation treatment, flame treatment, plasma treatment, or sputter etching treatment as needed for the purpose of controlling adhesion or attaching operability. surface treatment. Furthermore, if necessary, an isolation film or the like can be temporarily bonded on the adhesive layer for protection before being put into practical use.

另外，可根據需要於基材層之與黏著層之附設面相反之面形成用於賦予脫模性之脫模層。脫模層可藉由與基材層及黏著層一起共擠出來形成，亦可藉由塗佈來形成。In addition, if necessary, a release layer for imparting release properties may be formed on the surface of the base material layer opposite to the surface on which the adhesive layer is attached. The release layer can be formed by co-extrusion with the base material layer and the adhesive layer, or can be formed by coating.

藉由共擠出形成脫模層時，較佳使用包含2種以上之聚烯烴系樹脂之混合物來形成。其原因在於，藉由使用包含2種以上之聚烯烴系樹脂之混合物，藉由控制2種聚烯烴系樹脂之相溶性，能形成適度之表面粗糙度，賦予適度之脫模性。藉由共擠出形成脫模層時，其厚度通常為1～30 μm左右，較佳為2～20 μm，進而較佳為3～10 μm。When the release layer is formed by co-extrusion, it is preferably formed using a mixture containing two or more types of polyolefin-based resins. The reason for this is that by using a mixture containing two or more types of polyolefin-based resins and controlling the compatibility of the two types of polyolefin-based resins, appropriate surface roughness can be formed and appropriate mold releasability can be imparted. When the release layer is formed by coextrusion, its thickness is usually about 1 to 30 μm, preferably 2 to 20 μm, and further preferably 3 to 10 μm.

作為藉由塗佈形成脫模層時之脫模劑，可無特別限制地使用能賦予脫模性者。例如，作為脫模劑，可列舉包含矽氧系聚合物、或長鏈烷基系聚合物者。脫模劑可為無溶劑型、溶解於有機溶劑而成之溶劑型、於水中進行乳化之乳化型中之任意類型，溶劑型、乳化型之脫模劑能夠穩定地將脫模層附設於基材層。此外，作為脫模劑，可列舉紫外線硬化型之脫模劑等。作為脫模劑之具體例，可獲得Peeloil(一方社油脂公司製造)、Shin-Etsu Silicone(信越化學工業公司製造)等。When the release layer is formed by coating, any release agent that can impart release properties can be used without particular limitation. For example, examples of the release agent include silicone-based polymers or long-chain alkyl-based polymers. The release agent can be any type of solvent-free type, solvent type dissolved in an organic solvent, or emulsified type emulsified in water. Solvent-based and emulsified type release agents can stably attach the release layer to the base. material layer. Examples of the release agent include ultraviolet curable release agents. As specific examples of the release agent, Peeloil (manufactured by Ichisha Oils & Fats Co., Ltd.), Shin-Etsu Silicone (manufactured by Shin-Etsu Chemical Industry Co., Ltd.), etc. are available.

脫模層之厚度並無特別限定，如前所述，就薄膜化形成時污染減少效果較大之方面而言，通常較佳為1～1000 nm左右，進而較佳為5～500 nm，特別較佳為10～100 nm。The thickness of the release layer is not particularly limited. As mentioned above, in order to achieve a greater effect of reducing contamination when forming a thin film, it is usually preferably about 1 to 1000 nm, and more preferably 5 to 500 nm. Especially Preferably it is 10~100 nm.

保護膜之厚度(配置有黏著層、或脫模層時，為包含該等在內之厚度)較佳為5 μm以上且55 μm以下。保護膜之厚度之下限值更佳為8 μm，進而較佳為10 μm，特別較佳為15 μm。保護膜之厚度之上限值更佳為50 μm，進而較佳為45 μm，特別較佳為40 μm。藉由將保護膜之厚度設為上述範圍，從而能夠發揮充分之保護功能且實現薄型化。The thickness of the protective film (when an adhesive layer or a release layer is provided, the thickness includes these) is preferably 5 μm or more and 55 μm or less. The lower limit of the thickness of the protective film is more preferably 8 μm, further preferably 10 μm, and particularly preferably 15 μm. The upper limit of the thickness of the protective film is more preferably 50 μm, further preferably 45 μm, and particularly preferably 40 μm. By setting the thickness of the protective film within the above range, a sufficient protective function can be exerted and the thickness can be reduced.

如上所述，保護膜之與鄰接層接觸之側之面較佳為具有黏著性。具體而言，保護膜與鄰接層之間之剝離力較佳為1 N/50 mm以下，更佳為0.8 N/50 mm以下，進而較佳為0.6 N/50 mm以下。另一方面，上述剝離力較佳為0.01 N/50 mm以上，更佳為0.02 N/50 mm以上，進而較佳為0.04 N/50 mm以上。藉由將保護膜與鄰接層之間之剝離力設為上述範圍，從而能夠防止不期望之保護膜之剝離並且實現剝離步驟中之保護膜之順利剝離。As mentioned above, the surface of the protective film that contacts the adjacent layer is preferably adhesive. Specifically, the peeling force between the protective film and the adjacent layer is preferably 1 N/50 mm or less, more preferably 0.8 N/50 mm or less, and further preferably 0.6 N/50 mm or less. On the other hand, the peeling force is preferably 0.01 N/50 mm or more, more preferably 0.02 N/50 mm or more, and still more preferably 0.04 N/50 mm or more. By setting the peeling force between the protective film and the adjacent layer within the above range, it is possible to prevent unintended peeling of the protective film and achieve smooth peeling of the protective film in the peeling step.

(樹脂膜之製造方法) 樹脂膜10之製造方法並無特別限定，可採用先前公知之製膜方法。作為製膜方法，例如可例示：壓延製膜法、於有機溶劑中之流延法、於密閉系統中之吹脹擠出法、T模擠出法、共擠出法、乾式層壓法等。使用加入上述樹脂及抗氧化劑、以及根據需要加入溶劑、或其他添加材料之樹脂組合物，能夠利用上述製膜方法形成樹脂膜。(Manufacturing method of resin film) The manufacturing method of the resin film 10 is not particularly limited, and conventionally known film manufacturing methods can be used. Examples of the film forming method include: calendering film forming method, casting method in organic solvent, inflation extrusion method in a closed system, T-die extrusion method, co-extrusion method, dry lamination method, etc. . A resin film can be formed using the above-mentioned film-forming method by using a resin composition in which the above-mentioned resin and antioxidant are added, and if necessary, a solvent or other additive materials are added.

＜導電性膜＞ 以下對具備樹脂膜10作為基材膜、或保護膜之導電性膜進行說明。圖2A～圖2C及圖3A～圖3C分別係本發明之一實施形態之導電性膜之模式剖視圖。首先，對各導電性膜之層結構進行說明，然後，對除了基材膜及保護膜以外之構成進行說明。其中，本發明不限定於以下說明之層結構，可於本發明之範圍內進行各種變更。＜Conductive film＞ Next, a conductive film including the resin film 10 as a base film or a protective film will be described. 2A to 2C and 3A to 3C are respectively schematic cross-sectional views of the conductive film according to one embodiment of the present invention. First, the layer structure of each conductive film will be described, and then, the structure other than the base film and the protective film will be described. However, the present invention is not limited to the layer structure described below, and various changes can be made within the scope of the present invention.

(具備樹脂膜作為基材膜之導電性膜之層結構) 圖2A所示之導電性膜101具備基材膜1及配置於基材膜1之一面側之導電層2a。如圖2A所示，亦可於基材膜1與導電層2a之間設置基底層4a。(Layer structure of a conductive film having a resin film as a base film) The conductive film 101 shown in FIG. 2A includes a base film 1 and a conductive layer 2 a arranged on one side of the base film 1 . As shown in FIG. 2A , a base layer 4a may also be provided between the base film 1 and the conductive layer 2a.

圖2B所示之導電性膜102具備：基材膜1、配置於基材膜1之一面側之導電層2a及配置於基材膜1之另一面側之導電層2b。如圖2B所示，亦可於基材膜1與導電層2a之間、及基材膜1與導電層2b之間分別設置基底層4a、4b。The conductive film 102 shown in FIG. 2B includes a base film 1, a conductive layer 2a disposed on one side of the base film 1, and a conductive layer 2b disposed on the other side of the base film 1. As shown in FIG. 2B , base layers 4a and 4b may be respectively provided between the base film 1 and the conductive layer 2a, and between the base film 1 and the conductive layer 2b.

圖2C所示之導電性膜103依次具備：基材膜1、導電層2a及保護膜3a。於基材膜1之相反側進而具備導電層2b。如圖2C所示，亦可於基材膜1與導電層2a之間、及基材膜1與導電層2b之間分別設置基底層4a、4b。進而，雖然未圖示，亦可於導電層2b之最表面側配置其他保護膜。The conductive film 103 shown in FIG. 2C includes a base film 1, a conductive layer 2a, and a protective film 3a in this order. The conductive layer 2b is further provided on the opposite side of the base film 1. As shown in FIG. 2C , base layers 4a and 4b may be respectively provided between the base film 1 and the conductive layer 2a, and between the base film 1 and the conductive layer 2b. Furthermore, although not shown in the figure, another protective film may be disposed on the outermost surface side of the conductive layer 2b.

導電性膜101～103中，具備作為基材膜1之樹脂膜10。作為導電性膜103中之保護膜，可具備樹脂膜10，亦可具備其他膜。圖2A～圖2C中，對於導電層及基底層，分別圖示包含1層之構成，亦可分別為2層以上之多層構成。The conductive films 101 to 103 include the resin film 10 as the base film 1 . As the protective film in the conductive film 103, the resin film 10 may be provided, or other films may be provided. In FIGS. 2A to 2C , the conductive layer and the base layer each illustrate a structure including one layer, but may also have a multi-layer structure of two or more layers.

(具備樹脂膜作為保護膜之導電性膜之層結構) 圖3A所示之導電性膜201具備：基材膜1、配置於基材膜1之一面側之導電層2a及配置於導電層2a之最表面側之保護膜3a。如圖3A所示，亦可於基材膜1與導電層2a之間設置基底層4a。(Layer structure of a conductive film with a resin film as a protective film) The conductive film 201 shown in FIG. 3A includes a base film 1, a conductive layer 2a disposed on one surface side of the base film 1, and a protective film 3a disposed on the outermost surface side of the conductive layer 2a. As shown in FIG. 3A , a base layer 4a may also be provided between the base film 1 and the conductive layer 2a.

或者，如圖3B所示之導電性膜202般，保護膜3b亦可配置於基材膜1之與導電層2a側相反之一側。進而，亦可於基材膜1與保護膜3b之間設置基底層、或導電層(均未圖示)。Alternatively, like the conductive film 202 shown in FIG. 3B , the protective film 3b may be disposed on the side of the base film 1 opposite to the conductive layer 2a side. Furthermore, a base layer or a conductive layer (both not shown) may be provided between the base film 1 and the protective film 3b.

進而，如圖3C所示之導電性膜203般，保護膜3a、3b亦可配置於基材膜1之兩面側之最表面側。對於導電性膜203，亦可於基材膜1與保護膜3b之間設置基底層、或導電層(均未圖示)。Furthermore, like the conductive film 203 shown in FIG. 3C , the protective films 3 a and 3 b may be disposed on the outermost surface side of both sides of the base film 1 . For the conductive film 203, a base layer or a conductive layer (both not shown) may be provided between the base film 1 and the protective film 3b.

導電性膜201～203中，具備作為保護膜3a、3b之樹脂膜10。作為導電性膜201～203中之基材膜，可具備樹脂膜10，亦可具備其他膜。圖3A～圖3C中，對於導電層及基底層，分別圖示包含1層之構成，亦可分別為2層以上之多層構成。The conductive films 201 to 203 include the resin film 10 as the protective films 3a and 3b. As the base film among the conductive films 201 to 203, the resin film 10 may be provided, or other films may be provided. In FIGS. 3A to 3C , the conductive layer and the base layer each illustrate a structure including one layer, but may also have a multi-layer structure of two or more layers.

導電性膜之厚度可為上述任意之形態，較佳為50 μm以上且250 μm以下，較佳為80 μm以上且200 μm以下，較佳為100 μm以上且180 μm以下。藉由將導電性膜之厚度設為上述範圍，從而能使利用輥對輥法之操作容易。The thickness of the conductive film may be any of the above-mentioned forms, but is preferably 50 μm or more and 250 μm or less, preferably 80 μm or more and 200 μm or less, and preferably 100 μm or more and 180 μm or less. By setting the thickness of the conductive film within the above range, operation by the roll-to-roll method can be facilitated.

(導電層) 為了充分地獲得電磁波屏蔽效果、或傳感器功能等，導電層2a、2b之電阻率較佳為100 μΩcm以下。作為導電層2a、2b之形成材料，只要滿足此種電阻率並具有導電性，則無特別限定，例如，適宜使用Cu、Al、Fe、Cr、Ti、Si、Nb、In、Zn、Sn、Au、Ag、Co、Cr、Ni、Pb、Pd、Pt、W、Zr、Ta、Hf、Mo、Mn、Mg、V等金屬。另外，亦可使用含有2種以上該等金屬之物質、以該等金屬為主要成分之合金、或氧化物等。要求透明性之情形時，亦較佳使用銦-錫複合氧化物(ITO)。該等導電性化合物之中，就有助於電磁波屏蔽特性或傳感器功能之導電率較高、價格較低之觀點而言，較佳為包含Cu、Al。特別是就性價比及生產效率之觀點而言，較佳為包含Cu，可以雜質程度包含除Cu以外之元素。由此，電阻率充分小、導電率較高，因此能夠提高電磁波屏蔽特性、或傳感器功能。(conductive layer) In order to fully obtain the electromagnetic wave shielding effect or sensor function, the resistivity of the conductive layers 2a and 2b is preferably 100 μΩcm or less. The material for forming the conductive layers 2a and 2b is not particularly limited as long as it satisfies the resistivity and has conductivity. For example, Cu, Al, Fe, Cr, Ti, Si, Nb, In, Zn, Sn, Au, Ag, Co, Cr, Ni, Pb, Pd, Pt, W, Zr, Ta, Hf, Mo, Mn, Mg, V and other metals. In addition, substances containing two or more of these metals, alloys containing these metals as main components, or oxides can also be used. When transparency is required, indium-tin composite oxide (ITO) is also preferred. Among these conductive compounds, Cu and Al are preferably contained from the viewpoint of higher conductivity that contributes to electromagnetic wave shielding characteristics or sensor function and lower price. In particular, from the viewpoint of cost performance and production efficiency, it is preferable to contain Cu, and elements other than Cu may be contained to an impurity level. As a result, the resistivity is sufficiently small and the electrical conductivity is high, so that the electromagnetic wave shielding characteristics or the sensor function can be improved.

導電層2a、2b之形成方法並無特別限定，可採用先前公知之方法。具體而言，例如就膜厚之均勻性、或成膜效率之觀點而言，較佳為藉由濺鍍法、化學氣相沈積法(CVD)、或物理氣相沈積法(PVD)等真空成膜法、或離子鍍法、鍍覆法(電解鍍、無電解鍍)、燙印法、塗佈法等進行成膜。另外，亦可組合複數個該等製膜方法，亦可根據所需之膜厚採用適宜之方法。其中，較佳為濺鍍法、真空成膜法，特別較佳為藉由濺鍍法獲得之濺鍍膜。藉此，能夠藉由卷對卷製法連續生產、提高生產效率，並且能夠控制成膜時之膜厚、或表面粗糙度，因此能夠抑制導電性膜之表面電阻值之上升。另外，能夠較薄且膜厚均勻地形成緻密之導電層。The formation method of the conductive layers 2a and 2b is not particularly limited, and previously known methods can be used. Specifically, for example, from the viewpoint of film thickness uniformity or film formation efficiency, it is preferable to use a vacuum method such as sputtering, chemical vapor deposition (CVD), or physical vapor deposition (PVD). The film is formed by a film forming method, an ion plating method, a plating method (electrolytic plating, electroless plating), a hot stamping method, a coating method, or the like. In addition, a plurality of these film-making methods can also be combined, and an appropriate method can be adopted according to the required film thickness. Among them, the sputtering method and the vacuum film forming method are preferred, and a sputtered film obtained by the sputtering method is particularly preferred. This enables continuous production by the roll-to-roll method, improving production efficiency, and controlling the film thickness or surface roughness during film formation, thereby suppressing an increase in the surface resistance of the conductive film. In addition, a dense conductive layer can be formed thinly and with a uniform film thickness.

導電層2a、2b之厚度並無特別限定，分別獨立地較佳為10 nm以上且250 nm以下。導電層2a、2b之厚度之下限值較佳為20 nm，更佳為50 nm。另一方面，導電層2a、2b之厚度之上限值較佳為200 nm。導電層2a、2b之厚度超過上述上限值時，加熱後之導電性膜容易發生捲取，或器件之薄型化變得困難。另外，會發生由導電層2a、2b之強度降低所導致之圖案佈線之剝離。厚度小於上述下限值時，有時於加濕熱條件下導電性膜之表面電阻值容易高電阻化、無法獲得目標加濕熱可靠性。The thickness of the conductive layers 2a and 2b is not particularly limited, but each independently preferably is 10 nm or more and 250 nm or less. The lower limit of the thickness of the conductive layers 2a and 2b is preferably 20 nm, more preferably 50 nm. On the other hand, the upper limit of the thickness of the conductive layers 2a and 2b is preferably 200 nm. When the thickness of the conductive layers 2a and 2b exceeds the above upper limit, the conductive film after heating is likely to be rolled up, or it becomes difficult to reduce the thickness of the device. In addition, peeling of the pattern wiring may occur due to a decrease in the strength of the conductive layers 2a and 2b. When the thickness is less than the above lower limit, the surface resistance value of the conductive film tends to become high under humidification heat conditions, and the target humidification heat reliability may not be obtained.

(保護層) 例如為了防止導電層2a、2b受到大氣中之氧氣之影響而自然氧化，可於導電層2a、2b之最表面側形成保護層(未圖示)。保護層只要表現出防止導電層生銹之效果，則無特別限定，較佳為能夠濺鍍之金屬，可使用選自由Ni、Cu、Ti、Si、Zn、Sn、Cr、Fe、銦、鎵、銻、鋯、鎂、鋁、金、銀、鈀、鎢所組成之金屬中之任1種以上金屬或該等之氧化物。Ni、Cu、Ti由於會形成鈍化層，因此不易被腐蝕，Si由於耐腐蝕性提高，因此不易被腐蝕，Zn、Cr由於會於表面形成緻密之氧化覆膜，因此為不易被腐蝕之金屬，故而較佳。(protective layer) For example, in order to prevent the conductive layers 2a and 2b from being naturally oxidized under the influence of oxygen in the atmosphere, a protective layer (not shown) may be formed on the outermost surface side of the conductive layers 2a and 2b. The protective layer is not particularly limited as long as it can prevent the conductive layer from rusting. It is preferably a metal that can be sputtered. It can be selected from the group consisting of Ni, Cu, Ti, Si, Zn, Sn, Cr, Fe, indium, and gallium. , any one or more metals composed of antimony, zirconium, magnesium, aluminum, gold, silver, palladium, tungsten or their oxides. Ni, Cu, and Ti are not easily corroded because they form a passivation layer. Si has improved corrosion resistance and is therefore not easily corroded. Zn and Cr are metals that are not easily corroded because they form a dense oxide film on the surface. Therefore it is better.

作為保護層之材料，就確保與導電層2a、2b之密接性且防止導電層2a、2b生銹之觀點而言，可使用包含2種金屬之合金，較佳為包含3種以上金屬之合金。作為包含3種以上金屬之合金，可列舉：Ni-Cu-Ti、Ni-Cu-Fe、Ni-Cu-Cr等，就防銹功能及生產效率之觀點而言，較佳為Ni-Cu-Ti。再者，就確保與導電層2a、2b之密接性之觀點而言，較佳為包含導電層2a、2b之形成材料之合金。由此，能夠防止導電層2a、2b之氧化。As the material of the protective layer, from the viewpoint of ensuring adhesion with the conductive layers 2a and 2b and preventing the conductive layers 2a and 2b from rusting, an alloy containing two kinds of metals can be used, and an alloy containing three or more kinds of metals is preferred. . Examples of alloys containing three or more metals include Ni-Cu-Ti, Ni-Cu-Fe, Ni-Cu-Cr, etc. From the viewpoint of anti-rust function and production efficiency, Ni-Cu- Ti. Furthermore, from the viewpoint of ensuring adhesion with the conductive layers 2a and 2b, an alloy containing the material forming the conductive layers 2a and 2b is preferred. This can prevent the conductive layers 2a and 2b from being oxidized.

另外，作為保護層之材料，例如，可包含摻雜銦氧化錫(ITO)、含有銻之氧化錫(ATO)、摻雜鋁氧化鋅(AZO)、摻雜鎵氧化鋅(GZO)、摻雜銦氧化鋅(IZO)。不僅能抑制導電性膜之初期之表面電阻值之上升，而且能夠抑制加濕熱條件下之表面電阻值之上升，能夠使表面電阻值之穩定化最佳，故而較佳。In addition, as the material of the protective layer, for example, it may include doped indium tin oxide (ITO), doped antimony-containing tin oxide (ATO), doped aluminum zinc oxide (AZO), doped gallium zinc oxide (GZO), doped Indium zinc oxide (IZO). It is preferable because it can suppress not only the increase in surface resistance value in the initial stage of the conductive film but also the increase in surface resistance value under humidified heat conditions, thereby optimally stabilizing the surface resistance value.

上述金屬之氧化物較佳SiO_x (x＝1.0～2.0)、氧化銅、氧化銀、氧化鈦等氧化物。再者，亦可藉由代替上述之金屬、合金、氧化物等而於導電層上形成丙烯酸系樹脂、或環氧系樹脂般之樹脂層，由此獲得防銹效果。The oxides of the above metals are preferably oxides such as SiO _x (x = 1.0 to 2.0), copper oxide, silver oxide, titanium oxide and the like. Furthermore, the anti-rust effect can also be obtained by forming a resin layer such as acrylic resin or epoxy resin on the conductive layer instead of the above-mentioned metals, alloys, oxides, etc.

保護層之膜厚較佳為1～50 nm，更佳為2～30 nm，較佳為3～20 nm。藉此，耐久性提高，能夠防止自表面層氧化，因此能夠抑制於加濕熱條件下之表面電阻值上升。The film thickness of the protective layer is preferably 1 to 50 nm, more preferably 2 to 30 nm, and more preferably 3 to 20 nm. This improves durability and prevents oxidation of the surface layer, thereby suppressing an increase in surface resistance under humidification and heat conditions.

(基底層) 對於基底層，藉由設置滿足導電層2a、2b對基材膜1之密接性、或對導電性膜之強度賦予、電特性之控制等目的之基底層，從而能夠實現導電性膜之高功能化。作為基底層4a、4b，並無特別限定，可列舉：易密接層、硬塗層(包括作為抗黏連層等而起作用之層)、電介質層等。(basal layer) By providing a base layer that satisfies the purpose of adhesion of the conductive layers 2a and 2b to the base film 1, imparting strength to the conductive film, controlling electrical characteristics, etc., it is possible to achieve high functionality of the conductive film. change. The base layers 4a and 4b are not particularly limited, and examples thereof include easy-adhesion layers, hard coat layers (including layers that function as anti-adhesion layers, etc.), dielectric layers, and the like.

(易密接層) 易密接層為接著性樹脂組合物之硬化膜。易密接層對導電層具有良好之密接性。(Easy bonding layer) The easy-adhesion layer is a cured film of an adhesive resin composition. The easy-adhesion layer has good adhesion to the conductive layer.

作為接著性樹脂組合物，可無特別限制地使用作為易密接層形成後之硬化膜具有充分之接著性及強度之物質。作為使用之樹脂，可列舉熱硬化型樹脂、熱塑型樹脂、紫外線硬化型樹脂、電子束硬化型樹脂、二液混合型樹脂、及該等之混合物等，該等之中，能夠藉由基於紫外線照射之硬化處理，以簡單之加工操作效率良好地形成易密接層之紫外線硬化型樹脂較為適當。藉由包含紫外線硬化型樹脂，容易獲得具有紫外線硬化性之接著性樹脂組合物。As the adhesive resin composition, one having sufficient adhesiveness and strength as a cured film after the formation of the easy-adhesion layer can be used without particular limitation. Examples of resins used include thermosetting resins, thermoplastic resins, ultraviolet curing resins, electron beam curing resins, two-liquid mixed resins, and mixtures thereof. Among these, a resin based on For the curing treatment by ultraviolet irradiation, an ultraviolet curable resin that can efficiently form an easy-adhesion layer with simple processing operations is more suitable. By containing an ultraviolet curable resin, an adhesive resin composition having ultraviolet curability can be easily obtained.

作為接著性樹脂組合物，較佳為於硬化時形成交聯結構之材料。其原因在於推測：若易密接層中之交聯結構得到促進，則在此之前較鬆散之膜內部結構變得堅固，膜強度提高。此種膜強度之提高有助於密接性之提高。The adhesive resin composition is preferably a material that forms a cross-linked structure when cured. The reason is that it is speculated that if the cross-linked structure in the easy-to-adhesion layer is promoted, the internal structure of the film that was previously loose will become stronger and the film strength will increase. This increase in film strength contributes to improved adhesion.

接著性樹脂組合物較佳為包含(甲基)丙烯酸酯單體及(甲基)丙烯酸酯低聚物中之至少1種。由此，起因於丙烯醯基中包含之C=C雙鍵之交聯結構之形成變得容易，能夠有效地實現膜強度之提高。再者，本說明書中，(甲基)丙烯酸酯係指丙烯酸酯或甲基丙烯酸酯。The adhesive resin composition preferably contains at least one kind of a (meth)acrylate monomer and a (meth)acrylate oligomer. This makes it easier to form a cross-linked structure due to the C=C double bond contained in the acryl group, thereby effectively improving the film strength. In addition, in this specification, (meth)acrylate means acrylate or methacrylate.

本實施形態中使用之作為主要成分之具有(甲基)丙烯醯基之(甲基)丙烯酸酯單體及/或丙烯酸酯低聚物具有形成塗膜之作用，具體而言，可列舉：三羥甲基丙烷三(甲基)丙烯酸酯、環氧乙烷改性三羥甲基丙烷三(甲基)丙烯酸酯、環氧丙烷改性三羥甲基丙烷三(甲基)丙烯酸酯、三羥甲基丙烷四(甲基)丙烯酸酯、三(丙烯醯氧基乙基)異氰脲酸酯、己內酯改性三(丙烯醯氧基乙基)異氰脲酸酯、季戊四醇三(甲基)丙烯酸酯、季戊四醇四(甲基)丙烯酸酯、二季戊四醇五(甲基)丙烯酸酯、二季戊四醇六(甲基)丙烯酸酯、烷基改性二季戊四醇三(甲基)丙烯酸酯、烷基改性二季戊四醇四(甲基)丙烯酸酯、烷基改性二季戊四醇五(甲基)丙烯酸酯、己內酯改性二季戊四醇六(甲基)丙烯酸酯、及該等之2種以上之混合物。The (meth)acrylate monomer and/or acrylate oligomer having a (meth)acrylyl group as the main component used in this embodiment has the function of forming a coating film. Specifically, three can be listed: Methylolpropane tri(meth)acrylate, ethylene oxide modified trimethylolpropane tri(meth)acrylate, ethylene oxide modified trimethylolpropane tri(meth)acrylate, trimethylolpropane tri(meth)acrylate Hydroxymethylpropane tetra(meth)acrylate, tris(acryloxyethyl)isocyanurate, caprolactone modified tris(acryloxyethyl)isocyanurate, pentaerythritol tris( Meth)acrylate, pentaerythritol tetra(meth)acrylate, dipentaerythritol penta(meth)acrylate, dipentaerythritol hexa(meth)acrylate, alkyl modified dipentaerythritol tri(meth)acrylate, alkyl Base-modified dipentaerythritol tetra(meth)acrylate, alkyl-modified dipentaerythritol penta(meth)acrylate, caprolactone-modified dipentaerythritol hexa(meth)acrylate, and 2 or more of these mixture.

上述(甲基)丙烯酸酯之中，就耐磨耗性、硬化性之方面而言，尤其較佳為季戊四醇三(甲基)丙烯酸酯、二季戊四醇六(甲基)丙烯酸酯、二季戊四醇五(甲基)丙烯酸酯、或該等之混合物。Among the above-mentioned (meth)acrylates, in terms of wear resistance and hardening properties, pentaerythritol tri(meth)acrylate, dipentaerythritol hexa(meth)acrylate, and dipentaerythritol penta(meth)acrylate are particularly preferred. Meth)acrylates, or mixtures thereof.

另外，亦可使用胺基甲酸酯丙烯酸酯低聚物。對於胺基甲酸酯(甲基)丙烯酸酯低聚物，可列舉：使多元醇與聚異氰酸酯反應後，與具有羥基之(甲基)丙烯酸酯反應之方法；使聚異氰酸酯與具有羥基之(甲基)丙烯酸酯反應後，與多元醇反應之方法；使聚異氰酸酯、多元醇、具有羥基之(甲基)丙烯酸酯反應之方法等，並無特別限定。Alternatively, urethane acrylate oligomers may be used. Examples of the urethane (meth)acrylate oligomer include: reacting a polyol with a polyisocyanate, and then reacting it with a (meth)acrylate having a hydroxyl group; making a polyisocyanate and a (meth)acrylate having a hydroxyl group The method of reacting the methacrylate with the polyol after reacting it; the method of reacting the polyisocyanate, the polyol, and the (meth)acrylate having a hydroxyl group are not particularly limited.

作為多元醇，例如可列舉：聚乙二醇、聚丙二醇、聚四亞甲基醚二醇及該等之共聚物、乙二醇、丙二醇、1,4-丁二醇、2,2'-硫代二乙醇等。Examples of the polyol include polyethylene glycol, polypropylene glycol, polytetramethylene ether glycol and copolymers thereof, ethylene glycol, propylene glycol, 1,4-butanediol, and 2,2'- Thiodiethanol, etc.

作為聚異氰酸酯，例如可列舉：異佛爾酮二異氰酸酯、2,4-甲苯二異氰酸酯、2,6-甲苯二異氰酸酯、間苯二異氰酸酯、對苯二異氰酸酯、六亞甲基二異氰酸酯、三甲基六亞甲基二異氰酸酯、4,4'-二苯基甲烷二異氰酸酯、氫化二苯基甲烷二異氰酸酯、1,3-苯二亞甲基二異氰酸酯、1,4-苯二亞甲基二異氰酸酯等。Examples of the polyisocyanate include isophorone diisocyanate, 2,4-toluene diisocyanate, 2,6-toluene diisocyanate, isophthalic diisocyanate, terephthalic diisocyanate, hexamethylene diisocyanate, and trimethyldiisocyanate. Hexamethylene diisocyanate, 4,4'-diphenylmethane diisocyanate, hydrogenated diphenylmethane diisocyanate, 1,3-phenylene diisocyanate, 1,4'-phenylene diisocyanate Isocyanates, etc.

若交聯密度過高，則作為底漆之性能降低、導電層密接性容易降低，因此可使用具有羥基之低官能(甲基)丙烯酸酯(以下，稱為含羥基(甲基)丙烯酸酯)。作為含羥基(甲基)丙烯酸酯，例如可列舉：(甲基)丙烯酸2-羥基乙酯、1,4-環己烷二甲醇單(甲基)丙烯酸酯、(甲基)丙烯酸2-羥基丙酯、(甲基)丙烯酸2-羥基丁酯、(甲基)丙烯酸4-羥基丁酯、2-羥基-3-苯氧基丙基(甲基)丙烯酸酯、2-羥基-3-丙烯醯氧基丙基(甲基)丙烯酸酯、季戊四醇三(甲基)丙烯酸酯等。上述(甲基)丙烯酸酯單體成分及/或(甲基)丙烯酸酯低聚物成分可單獨使用，亦可使用2種以上。If the cross-linking density is too high, the performance as a primer is reduced and the adhesiveness of the conductive layer is likely to be reduced. Therefore, a low-functional (meth)acrylate having a hydroxyl group (hereinafter referred to as a hydroxyl-containing (meth)acrylate) can be used. . Examples of hydroxyl-containing (meth)acrylates include: (meth)acrylic acid 2-hydroxyethyl ester, 1,4-cyclohexanedimethanol mono(meth)acrylate, (meth)acrylic acid 2-hydroxyethyl Propyl ester, 2-hydroxybutyl (meth)acrylate, 4-hydroxybutyl (meth)acrylate, 2-hydroxy-3-phenoxypropyl (meth)acrylate, 2-hydroxy-3-propene Dioxypropyl (meth)acrylate, pentaerythritol tri(meth)acrylate, etc. The above-mentioned (meth)acrylate monomer component and/or (meth)acrylate oligomer component may be used alone, or two or more types may be used.

本實施形態之具有紫外線硬化性之接著性樹脂組合物藉由調配含(甲基)丙烯醯基之矽烷偶合劑來提高抗黏連性。作為含(甲基)丙烯醯基之矽烷偶合劑，可列舉：3-丙烯醯氧基丙基三甲氧基矽烷、3-甲基丙烯醯氧基丙基甲基二甲氧基矽烷、3-甲基丙烯醯氧基丙基三甲氧基矽烷、3-甲基丙烯醯氧基丙基甲基二乙氧基矽烷、3-甲基丙烯醯氧基丙基三乙氧基矽烷等，作為市售品，可列舉：KR-513、KBM-5103(信越化學股份有限公司製造，商品名)。The ultraviolet curable adhesive resin composition of this embodiment improves anti-adhesion properties by blending a (meth)acrylyl group-containing silane coupling agent. Examples of the (meth)acrylyl group-containing silane coupling agent include: 3-acryloxypropyltrimethoxysilane, 3-methacryloxypropylmethyldimethoxysilane, Methacryloxypropyltrimethoxysilane, 3-methacryloxypropylmethyldiethoxysilane, 3-methacryloxypropyltriethoxysilane, etc., are commercially available Products for sale include: KR-513, KBM-5103 (trade name manufactured by Shin-Etsu Chemical Co., Ltd.).

矽烷偶合劑之調配量相對於上述(甲基)丙烯酸酯單體及/或(甲基)丙烯酸酯低聚物100重量份設為0.1重量份～50重量份，更佳為設為1～20重量份。若為該範圍，則與導電層之密接性提高，能夠維持塗膜物性。The compounding amount of the silane coupling agent is 0.1 to 50 parts by weight, more preferably 1 to 20 parts by weight based on 100 parts by weight of the above-mentioned (meth)acrylate monomer and/or (meth)acrylate oligomer. parts by weight. If it is within this range, the adhesiveness with the conductive layer will be improved, and the physical properties of the coating film can be maintained.

本實施形態之易密接層可包含奈米二氧化矽微粒。作為奈米二氧化矽微粒，可使用由烷基矽烷合成之有機矽溶膠或利用等離子弧合成之奈米二氧化矽。作為市售品，為前者時，可列舉PL-7-PGME(扶桑化學公司製造，商品名)，為後者時，可列舉SIRMIBK15WT%-M36(CIK NanoTek製造，商品名)等。奈米二氧化矽微粒之調配比例相對於上述具有(甲基)丙烯醯基之(甲基)丙烯酸酯單體及/或丙烯酸酯低聚物與矽烷偶合劑之總重量100重量份，較佳為5～30重量份，更佳為5～10重量份。藉由設為下限以上，從而形成表面凹凸，能夠賦予抗黏連性，能實現利用卷對卷(roll to roll)之生產。藉由設為上限以下，能夠防止與導電層之密接性之降低。The easy-adhesion layer of this embodiment may include nano-silica particles. As nanosilica particles, organosilica sol synthesized from alkyl silane or nanosilica synthesized by plasma arc can be used. As a commercially available product, in the case of the former, PL-7-PGME (manufactured by Fuso Chemical Co., Ltd., trade name) can be used, and in the case of the latter, SIRMIBK15WT%-M36 (manufactured by CIK NanoTek, trade name), etc. can be used. The proportion of nanosilica particles is preferably 100 parts by weight relative to the total weight of the above-mentioned (meth)acrylate monomer and/or acrylate oligomer and silane coupling agent having (meth)acrylyl groups. It is 5-30 parts by weight, more preferably 5-10 parts by weight. By setting it above the lower limit, surface irregularities are formed, anti-blocking properties can be imparted, and roll-to-roll production can be realized. By setting it below the upper limit, it is possible to prevent deterioration in the adhesiveness with the conductive layer.

奈米二氧化矽微粒之平均粒徑較佳為100～500nm。平均粒徑未達100 nm時，於表面形成凹凸所需之添加量變多，因此，無法獲得與導電層之密接性，與此相對，若超過500 nm，則表面凹凸變大，會產生針孔之問題。The average particle size of nano-silica particles is preferably 100 to 500 nm. When the average particle diameter is less than 100 nm, the amount of addition required to form unevenness on the surface becomes larger, so adhesion with the conductive layer cannot be obtained. On the other hand, when the average particle size exceeds 500 nm, the unevenness on the surface becomes larger, resulting in pinholes. problem.

為了賦予紫外線硬化性，接著性樹脂組合物較佳為包含光聚合起始劑。作為光聚合起始劑，可列舉：安息香正丁基醚、安息香異丁基醚等安息香醚類、苯偶醯二甲基縮酮、苯偶醯二乙基縮酮等苯偶醯縮酮類、2,2-二甲氧基苯乙酮、2,2-二乙氧基苯乙酮等苯乙酮類、1-羥基環己基苯基酮、[2-羥基-2-甲基-1-(4-伸乙基苯基)丙烷-1-酮]、2-羥基-2-甲基-1-苯基丙烷-1-酮、1-[4-(2-羥基乙氧基)苯基]-2-羥基-2-甲基-1-丙烷-1-酮、2-羥基-2-甲基-1-(4-異丙基苯基)丙烷-1-酮等α-羥基烷基苯酮類、2-甲基-1-[4-(甲基硫代)苯基]-1-嗎啉基丙烷、2-苄基-2-二甲基胺基-1-(4-嗎啉基苯基)-1-丁酮等α-胺基烷基苯酮類、2,4,6-三甲基苯甲醯基二苯基氧化膦、2,4,6-三甲基苯甲醯基苯基乙氧基氧化膦等單醯基氧化膦類、雙(2,6-二甲氧基苯甲醯基)-2,4,4-三甲基戊基氧化膦、雙(2,4,6-三甲基苯甲醯基)苯基氧化膦等單醯基氧化膦類等。In order to provide ultraviolet curability, the adhesive resin composition preferably contains a photopolymerization initiator. Examples of photopolymerization initiators include benzoin ethers such as benzoin n-butyl ether and benzoin isobutyl ether, benzoyl ketals such as benzoyl dimethyl ketal and benzoyl diethyl ketal. , 2,2-dimethoxyacetophenone, 2,2-diethoxyacetophenone and other acetophenones, 1-hydroxycyclohexylphenylketone, [2-hydroxy-2-methyl-1 -(4-ethylphenyl)propan-1-one], 2-hydroxy-2-methyl-1-phenylpropan-1-one, 1-[4-(2-hydroxyethoxy)benzene base]-2-hydroxy-2-methyl-1-propan-1-one, 2-hydroxy-2-methyl-1-(4-isopropylphenyl)propan-1-one and other α-hydroxyalkanes phenones, 2-methyl-1-[4-(methylthio)phenyl]-1-morpholinopropane, 2-benzyl-2-dimethylamino-1-(4- α-aminoalkylphenones such as morpholinylphenyl)-1-butanone, 2,4,6-trimethylbenzyldiphenylphosphine oxide, 2,4,6-trimethyl Benzylphenyl ethoxyphosphine oxide and other monoylphosphine oxides, bis(2,6-dimethoxybenzyl)-2,4,4-trimethylpentylphosphine oxide, bis(2,6-dimethoxybenzyl)-2,4,4-trimethylpentylphosphine oxide, (2,4,6-Trimethylbenzyl)phenylphosphine oxide and other monoylphosphine oxides.

就樹脂之硬化性、光穩定性、與樹脂之相容性、低揮發、低臭味之方面而言，較佳為烷基苯酮系光聚合起始劑，更佳為1-羥基環己基苯基酮、2-羥基-2-甲基-1-苯基-丙烷-1-酮、(2-羥基-1-{4-[4-(2-羥基-2-甲基-丙醯基)-苄基]苯基}-2-甲基-丙烷-1-酮、1-[4-(2-羥基乙氧基)-苯基]-2-羥基-2-甲基-1-丙烷-1-酮。作為市售品，可列舉：Irgacure127、184、369、651、500、891、907、2959、Darocure1173、TPO(BASF JAPAN股份有限公司製造，商品名)等。光聚合起始劑相對於具有(甲基)丙烯醯基之(甲基)丙烯酸酯單體及/或丙烯酸酯低聚物100重量份調配固形物成分3～10重量份。In terms of resin hardening, light stability, compatibility with resin, low volatility, and low odor, an alkylphenone photopolymerization initiator is preferred, and 1-hydroxycyclohexyl is more preferred. Phenyl ketone, 2-hydroxy-2-methyl-1-phenyl-propan-1-one, (2-hydroxy-1-{4-[4-(2-hydroxy-2-methyl-propanyl) )-benzyl]phenyl}-2-methyl-propan-1-one, 1-[4-(2-hydroxyethoxy)-phenyl]-2-hydroxy-2-methyl-1-propane -1-one. Commercially available products include: Irgacure 127, 184, 369, 651, 500, 891, 907, 2959, Darocure 1173, TPO (trade name manufactured by BASF JAPAN Co., Ltd.), etc. Photopolymerization initiator A solid content of 3 to 10 parts by weight is prepared with respect to 100 parts by weight of the (meth)acrylate monomer and/or the acrylate oligomer having a (meth)acryl group.

於易密接層之形成時，將以分子內具有(甲基)丙烯醯基之(甲基)丙烯酸酯及/或(甲基)丙烯酸酯低聚物為主要成分之接著性樹脂組合物於甲苯、乙酸丁酯、異丁醇、乙酸乙酯、環己烷、環己酮、甲基環己酮、己烷、丙酮、甲基乙基酮、甲基異丁基酮、丙二醇單甲醚、二***、乙二醇等溶劑中稀釋，製備成固形物成分為30～50%之清漆。When forming the easy-adhesion layer, an adhesive resin composition containing (meth)acrylate and/or (meth)acrylate oligomer having a (meth)acryl group in the molecule as the main component is mixed with toluene. , Butyl acetate, isobutyl alcohol, ethyl acetate, cyclohexane, cyclohexanone, methylcyclohexanone, hexane, acetone, methyl ethyl ketone, methyl isobutyl ketone, propylene glycol monomethyl ether, Dilute it in diethyl ether, ethylene glycol and other solvents to prepare a varnish with a solid content of 30 to 50%.

易密接層藉由於樹脂膜1上塗佈上述清漆來形成。清漆之塗佈方法可根據清漆及塗裝步驟之狀況來適宜選擇，例如可藉由浸塗法、氣刀塗佈法、簾式塗佈法、輥塗法、線棒塗佈法、凹版塗佈法、模塗法、或擠出塗佈法等進行塗佈。The easy-adhesion layer is formed by coating the resin film 1 with the above-mentioned varnish. The coating method of varnish can be appropriately selected according to the conditions of the varnish and coating steps. For example, it can be dip coating, air knife coating, curtain coating, roller coating, wire bar coating, gravure coating. Coating is carried out by cloth method, die coating method, or extrusion coating method.

將清漆塗佈後，使塗膜硬化，藉此能夠形成易密接層。作為具有紫外線硬化性之接著性樹脂組合物之硬化處理，於清漆包含溶劑之情形時，可列舉如下步驟：基於乾燥(例如於80℃下1分鐘)將溶劑去除後，使用紫外線照射機，以500 mW/cm² ～3000 mW/cm² 之照射強度進行劑量為50～400 mJ/cm² 之紫外線處理使其硬化。作為紫外線產生源，通常使用紫外線燈，具體而言，可列舉：低壓水銀燈、高壓水銀燈、超高壓水銀燈、氙氣燈、金屬鹵化物燈等，進行照射時，可於空氣中，亦可於氮氣、氬氣等惰性氣體中。After applying the varnish, the coating film is hardened to form an easy-adhesion layer. When the varnish contains a solvent, the curing treatment of the adhesive resin composition having ultraviolet curability can include the following steps: after removing the solvent by drying (for example, 80° C. for 1 minute), using an ultraviolet irradiation machine, Use an irradiation intensity of 500 mW/cm ² to 3000 mW/cm ² to perform ultraviolet treatment with a dose of 50 to 400 mJ/cm ² to harden it. As an ultraviolet generating source, an ultraviolet lamp is usually used. Specifically, there are: low-pressure mercury lamp, high-pressure mercury lamp, ultra-high-pressure mercury lamp, xenon lamp, metal halide lamp, etc. When irradiating, it can be in the air, or in nitrogen, In inert gases such as argon.

較佳為紫外線硬化處理時進行加熱。藉由紫外線照射，接著性樹脂組合物之硬化反應進行，同時形成交聯結構。此時藉由進行加熱，從而以低紫外線量亦能夠充分促進交聯結構之形成。加熱溫度可根據交聯度來設定，較佳為50℃～80℃。對加熱手段並無特別限定，可適宜採用熱風乾燥機、輻射熱乾燥機、膜輸送輥之加熱等。It is preferable to perform heating during ultraviolet curing treatment. By irradiation with ultraviolet rays, the curing reaction of the adhesive resin composition proceeds and a cross-linked structure is formed. By heating at this time, the formation of the cross-linked structure can be fully promoted even with a low amount of ultraviolet rays. The heating temperature can be set according to the degree of cross-linking, and is preferably 50°C to 80°C. The heating means is not particularly limited, and hot air dryers, radiant heat dryers, heating of film transport rollers, etc. can be suitably used.

作為易密接層之厚度，並無特別限定，較佳為0.2 μm～2 μm，更佳為0.4 μm～1.5 μm，進而較佳為0.6 μm～1.2 μm。藉由將易密接層之厚度設為上述範圍，從而能夠提高導電層之密接性與膜之柔軟性。The thickness of the easy-adhesion layer is not particularly limited, but is preferably 0.2 μm to 2 μm, more preferably 0.4 μm to 1.5 μm, and further preferably 0.6 μm to 1.2 μm. By setting the thickness of the easy-adhesion layer within the above range, the adhesion of the conductive layer and the flexibility of the film can be improved.

(硬塗層) 作為基底層，可設置硬塗層。進而，為了防止導電層與保護膜之間、捲取成卷狀時之導電層與保護膜之間之黏連從而能實現基於卷對卷法之製造，可於硬塗層中調配粒子。(hard coat) As a base layer, a hard coat layer may be provided. Furthermore, in order to prevent adhesion between the conductive layer and the protective film, or between the conductive layer and the protective film when rolled into a roll, so as to realize manufacturing based on the roll-to-roll method, particles can be blended in the hard coat layer.

硬塗層之形成中可適當地使用與易密接層同樣之接著性組合物。為了賦予抗黏連性，較佳為於上述接著性組合物中調配粒子。由此能夠於硬塗層之表面形成凹凸，能夠適當地對導電性膜賦予抗黏連性。The same adhesive composition as that of the easy-adhesion layer can be suitably used for the formation of the hard coat layer. In order to impart anti-blocking properties, it is preferable to mix particles with the above-mentioned adhesive composition. As a result, unevenness can be formed on the surface of the hard coat layer, and anti-blocking properties can be appropriately imparted to the conductive film.

作為上述粒子，可無特別限制地使用各種金屬氧化物、玻璃、塑膠等具有透明性之粒子。例如可列舉：二氧化矽、氧化鋁、二氧化鈦、氧化鋯、氧化鈣等無機系粒子、包含聚甲基丙烯酸甲酯、聚苯乙烯、聚胺基甲酸酯、丙烯酸系樹脂、丙烯酸-苯乙烯共聚物、苯并胍胺、三聚氰胺、聚碳酸酯等各種聚合物之交聯或未交聯之有機系粒子、或矽氧系粒子等。上述粒子可適宜選擇1種或2種以上來使用。As the above-mentioned particles, transparent particles such as various metal oxides, glass, and plastics can be used without particular limitation. Examples include inorganic particles such as silica, alumina, titanium dioxide, zirconium oxide, and calcium oxide, including polymethylmethacrylate, polystyrene, polyurethane, acrylic resin, and acrylic-styrene. Cross-linked or non-cross-linked organic particles of copolymers, benzoguanamine, melamine, polycarbonate and other polymers, or silicone particles, etc. One type or two or more types of the above-mentioned particles can be appropriately selected and used.

對於上述粒子之平均粒徑、或調配量，可考慮表面凹凸之程度來適宜設定。作為平均粒徑，較佳為0.5 μm～2.0 μm，作為調配量，相對於組合物之樹脂固形物成分100重量份，較佳為0.2～5.0重量份。The average particle diameter or the blending amount of the above-mentioned particles can be appropriately set taking into consideration the degree of surface unevenness. The average particle diameter is preferably 0.5 μm to 2.0 μm, and the blending amount is preferably 0.2 to 5.0 parts by weight relative to 100 parts by weight of the resin solid component of the composition.

(電介質層) 作為基底層，可具備1層以上之電介質層。電介質層由無機物、有機物、或無機物與有機物之混合物形成。作為形成電介質層之材料，可列舉：NaF、Na₃ AlF₆ 、LiF、MgF₂ 、CaF₂ 、SiO₂ 、LaF₃ 、CeF₃ 、Al₂ O₃ 、TiO₂ 、Ta₂ O₅ 、ZrO₂ 、ZnO、ZnS、SiOx(x為1.5以上且未達2)等無機物、或丙烯酸系樹脂、胺基甲酸酯樹脂、三聚氰胺樹脂、醇酸樹脂、矽氧烷系聚合物等有機物。特別是作為有機物，較佳為使用包含三聚氰胺樹脂、醇酸樹脂及有機矽烷縮合物之混合物之熱硬化型樹脂。電介質層可使用上述材料，藉由凹版塗佈法、或棒塗法等塗佈法、真空蒸鍍法、濺鍍法、離子鍍法等來形成。(Dielectric layer) As the base layer, one or more dielectric layers may be provided. The dielectric layer is formed of inorganic substances, organic substances, or a mixture of inorganic substances and organic substances. Examples of materials forming the dielectric layer include: NaF, Na ₃ AlF ₆ , LiF, MgF ₂ , CaF 2 , SiO ₂ , LaF ₃ , CeF ₃ , Al ₂ O ₃ , TiO _{2 ,} Ta ₂ O ₅ , ZrO ₂ , Inorganic substances such as ZnO, ZnS, and SiOx (x is 1.5 or more and less than 2), or organic substances such as acrylic resin, urethane resin, melamine resin, alkyd resin, and siloxane polymer. In particular, as the organic substance, it is preferable to use a thermosetting resin containing a mixture of a melamine resin, an alkyd resin, and an organosilane condensate. The dielectric layer can be formed by a coating method such as a gravure coating method or a rod coating method, a vacuum evaporation method, a sputtering method, an ion plating method, or the like using the above-mentioned materials.

電介質層之厚度較佳為10 nm～250 nm，更佳為20 nm～200 nm，進而較佳為20 nm～170 nm。若電介質層之厚度過小，則不易形成連續覆膜。另外，若電介質層之厚度過大，則有容易於電介質層產生裂紋之傾向。The thickness of the dielectric layer is preferably 10 nm to 250 nm, more preferably 20 nm to 200 nm, and further preferably 20 nm to 170 nm. If the thickness of the dielectric layer is too small, it will be difficult to form a continuous coating. In addition, if the thickness of the dielectric layer is too large, cracks tend to easily occur in the dielectric layer.

電介質層可具有平均粒徑為1 nm～500 nm之奈米微粒。電介質層中之奈米微粒之含量較佳為0.1重量%～90重量%。電介質層中所用之奈米微粒之平均粒徑如上所述較佳為1 nm～500 nm之範圍，更佳為5 nm～300 nm。另外，電介質層中之奈米微粒之含量更佳為10重量%～80重量%，進而較佳為20重量%～70重量%。The dielectric layer may have nanoparticles with an average particle size of 1 nm to 500 nm. The content of nanoparticles in the dielectric layer is preferably 0.1% to 90% by weight. As mentioned above, the average particle size of the nanoparticles used in the dielectric layer is preferably in the range of 1 nm to 500 nm, and more preferably 5 nm to 300 nm. In addition, the content of the nanoparticles in the dielectric layer is preferably 10% to 80% by weight, and further preferably 20% to 70% by weight.

作為形成奈米微粒之無機氧化物，例如可列舉：氧化矽(二氧化矽)、中空奈米二氧化矽、氧化鈦、氧化鋁、氧化鋅、氧化錫、氧化鋯、氧化鈮等微粒。該等之中，較佳為氧化矽(二氧化矽)、氧化鈦、氧化鋁、氧化鋅、氧化錫、氧化鋯、氧化鈮之微粒。該等可單獨使用1種，亦可併用2種以上。Examples of inorganic oxides that form nanoparticles include particles such as silicon oxide (silica), hollow nanosilica, titanium oxide, aluminum oxide, zinc oxide, tin oxide, zirconium oxide, and niobium oxide. Among these, fine particles of silicon oxide (silica), titanium oxide, aluminum oxide, zinc oxide, tin oxide, zirconium oxide, and niobium oxide are preferred. These may be used individually by 1 type, and may be used in combination of 2 or more types.

(導電性膜之製造方法) 導電性膜可藉由如下之卷對卷法來製造：於根據需要形成有基底層之基材膜之一個面上形成導電層後，捲取成卷狀，繼而一面將膜自卷放出一面於導電層上貼合保護膜。或者，可於形成導電層之生產線之下游貼合保護膜後捲取成卷狀。於兩面形成導電層之情形時，於基材膜之一個面上形成導電層後，捲取成卷狀，然後一面放出膜一面於所形成之導電層上貼合保護膜，再次以膜狀捲取。繼而，一面放出膜一面於與貼合有保護膜之面相反側之面形成導電層，藉此能夠製造導電性膜。(Method for manufacturing conductive film) The conductive film can be produced by the following roll-to-roll method: after forming the conductive layer on one side of the base film on which the base layer is formed if necessary, it is rolled into a roll shape, and then the film is unrolled while being unrolled. A protective film is attached to the conductive layer. Alternatively, the protective film can be attached downstream of the production line for forming the conductive layer and then rolled into a roll. When the conductive layer is formed on both sides, after forming the conductive layer on one side of the base film, roll it into a roll, then unroll the film while laminating the protective film on the formed conductive layer, and roll it into a film again. Pick. Then, a conductive film can be produced by forming a conductive layer on the surface opposite to the surface on which the protective film is bonded while releasing the film.

例如，藉由濺鍍法將包含銅之導電層2a、2b成膜之情形時，較佳為，作為靶，使用銅(較佳為無氧銅)，首先，進行排氣直至濺鍍裝置內之真空度(到達真空度)變為較佳為1×10^-3 Pa以下，成為將濺鍍裝置內之水分、或由樹脂膜1產生之有機氣體等雜質去除之氣氛。For example, when the conductive layers 2a and 2b containing copper are formed by sputtering, it is preferable to use copper (preferably oxygen-free copper) as a target, and first, exhaust gas into the sputtering device. The degree of vacuum (reached vacuum degree) is preferably 1×10 ^-3 Pa or less, and it becomes an atmosphere in which impurities such as moisture in the sputtering device and organic gas generated from the resin film 1 are removed.

向如上操作經過排氣之濺鍍裝置內導入Ar等惰性氣體，較佳為於賦予張力之條件下一面輸送樹脂膜一面於減壓下進行濺鍍成膜。導電層成膜時之樹脂膜之溫度較佳為10℃～100℃，更佳為15℃～80℃，進而較佳為20℃～60℃。成膜時之壓力較佳為0.05 Pa～1.0 Pa，更佳為0.1 Pa～0.7 Pa。若成膜壓力過高，則有成膜速度降低之傾向，相反若壓力過低，則有放電變不穩定之傾向。It is preferable to introduce an inert gas such as Ar into the sputtering device that has been exhausted in the above operation, and perform sputtering film formation under reduced pressure while conveying the resin film under conditions that provide tension. The temperature of the resin film when forming the conductive layer is preferably 10°C to 100°C, more preferably 15°C to 80°C, and further preferably 20°C to 60°C. The pressure during film formation is preferably 0.05 Pa to 1.0 Pa, more preferably 0.1 Pa to 0.7 Pa. If the film-forming pressure is too high, the film-forming speed tends to decrease. On the contrary, if the pressure is too low, the discharge tends to become unstable.

保護膜之貼合之壓力並無特別限定，較佳為0.05 MPa以上且3 MPa以下，更佳為0.1 MPa以上且2 MPa以下，進而較佳為0.15 MPa以上且1 MPa以下。The bonding pressure of the protective film is not particularly limited, but is preferably from 0.05 MPa to 3 MPa, more preferably from 0.1 MPa to 2 MPa, and further preferably from 0.15 MPa to 1 MPa.

(導電性膜之特性) 導電層2a、2b之表面電阻值R1較佳為0.001 Ω/□～20 Ω/□，更佳為0.01 Ω/□～10 Ω/□，進而較佳為0.1 Ω/□～5 Ω/□。由此能夠提供生產效率優異之實用之附保護膜之導電性膜。(Characteristics of conductive film) The surface resistance value R1 of the conductive layers 2a and 2b is preferably 0.001 Ω/□ to 20 Ω/□, more preferably 0.01 Ω/□ to 10 Ω/□, and further preferably 0.1 Ω/□ to 5 Ω/□. This makes it possible to provide a practical conductive film with a protective film that is excellent in production efficiency.

就輸送性、或處理性之觀點而言，導電性膜可捲繞成卷狀。藉由利用卷對卷法於樹脂膜上連續形成基底層、或導電層，從而能夠效率良好地製造導電性膜。From the viewpoint of transportability or handleability, the conductive film can be wound into a roll shape. By continuously forming a base layer or a conductive layer on a resin film using a roll-to-roll method, a conductive film can be manufactured efficiently.

(導電性膜之用途) 附保護膜之導電性膜可應用於各種用途，例如，可應用於電磁波屏蔽片、或面狀傳感器、顯示器等。於裝入該等器件前將保護膜剝離。電磁波屏蔽片使用剝離保護膜之導電性膜，可以觸摸面板等形態適當地使用。上述電磁波屏蔽片之厚度較佳為20 μm～300 μm。(Use of conductive film) Conductive films with protective films can be used in various applications, such as electromagnetic wave shielding sheets, planar sensors, displays, etc. Peel off the protective film before installing these devices. The electromagnetic wave shielding sheet uses a conductive film that peels off the protective film and can be used appropriately in forms such as touch panels. The thickness of the electromagnetic wave shielding sheet is preferably 20 μm to 300 μm.

另外，電磁波屏蔽片之形狀並無特別限定，可根據要設置之對象物之形狀等，選擇自積層方向(與片之厚度方向相同之方向)觀察到之形狀為方形形狀、圓形形狀、三角形形狀、多邊形形狀等適宜之形狀。In addition, the shape of the electromagnetic wave shielding sheet is not particularly limited. Depending on the shape of the object to be installed, etc., the shape viewed from the stacking direction (the same direction as the thickness direction of the sheet) can be selected as a square shape, a circular shape, or a triangular shape. shape, polygonal shape, etc. suitable shapes.

面狀傳感器使用導電性膜，包括：用於在移動設備之觸摸面板、或控制器等之用戶界面測定載荷之力敏傳感器；將以對對象物之傳感區域例如汽車之外表面、機器人、或玩偶之表面所施加之外力為代表之各種物理量等進行傳感之傳感器。面狀傳感器可以力敏傳感器、屏蔽體等形態適當地使用。上述面狀傳感器之厚度較佳為20 μm～300 μm。Planar sensors use conductive films, including force-sensitive sensors used to measure load on touch panels of mobile devices or user interfaces of controllers; they will be used in sensing areas of objects such as exterior surfaces of cars, robots, etc. Or a sensor that senses various physical quantities represented by external forces exerted on the surface of the doll. Planar sensors can be used appropriately in the form of force sensors, shields, etc. The thickness of the above planar sensor is preferably 20 μm to 300 μm.

＜積層膜之製造方法＞ 本實施形態之積層膜之製造方法包括如下步驟：準備(i)基材膜、或(ii)貼合有保護膜之基材膜之步驟；及藉由真空製程於上述基材膜之至少一面側形成薄膜之步驟。於本實施形態中，至少(i)之基材膜及(ii)之保護膜分別具備樹脂膜10。進而(ii)之基材膜亦可具備樹脂膜10。＜Manufacturing method of laminated film＞ The manufacturing method of the laminated film of this embodiment includes the following steps: preparing (i) a base film or (ii) a base film bonded with a protective film; and applying a vacuum process to at least one side of the base film. The step of forming a thin film on the side. In this embodiment, at least the base film of (i) and the protective film of (ii) are each provided with the resin film 10 . Furthermore, the base film of (ii) may be provided with the resin film 10 .

積層膜可藉由如下之輥對輥法來製造：於根據需要形成基底層之基材膜之一面上藉由真空製程形成薄膜後捲取成卷狀，繼而一面自輥上將膜放出一面將保護膜貼合於導電層上。或者，亦可於形成薄膜之生產線之下游貼合保護膜後捲取成卷狀。於兩面形成薄膜之情形時，可藉由如下方式製造積層膜：於基材膜之一面上藉由真空製程形成薄膜後捲取成卷狀，然後一面將膜放出一面將保護膜貼合於所形成之薄膜上，再次以膜狀捲取。繼而，一面將膜放出一面於與貼合有保護膜之面相反側之面形成膜層，藉此製造積層膜。The laminated film can be produced by the following roll-to-roll method: a thin film is formed on one side of the base film on which the base layer is formed as required by a vacuum process, and then rolled into a roll, and then the film is unrolled from the roll. The protective film is attached to the conductive layer. Alternatively, the protective film may be attached downstream of the film forming production line and then rolled into a roll. When thin films are formed on both sides, a laminated film can be produced by the following method: forming a thin film on one side of the base film through a vacuum process, then rolling it into a roll, and then laminating the protective film to the desired surface while unwinding the film. On the formed film, the film is rolled up again. Then, a film layer is formed on the surface opposite to the surface on which the protective film is bonded while the film is being released, thereby producing a laminated film.

上述真空製程並無特別限定，可列舉：真空蒸鍍、濺鍍、離子鍍等物理氣相沈積法、電漿CVD等化學氣相沈積法等。其中，就膜質之均勻性、或膜壓控制、緻密性之觀點而言，較佳為濺鍍。The above-mentioned vacuum process is not particularly limited, and may include physical vapor deposition methods such as vacuum evaporation, sputtering, and ion plating, chemical vapor deposition methods such as plasma CVD, and the like. Among them, sputtering is preferred from the viewpoint of uniformity of film quality, film pressure control, and density.

作為上述薄膜，並無特別限定，可列舉：導電層、易密接層、電介質層、阻氣層等。藉由根據用途選擇所形成之膜，從而能夠製作各種積層膜。例如，藉由採用導電層作為薄膜，能夠有效地製造作為導電性膜之積層膜。 實施例The film is not particularly limited, and examples thereof include a conductive layer, an easy-adhesion layer, a dielectric layer, a gas barrier layer, and the like. By selecting the film to be formed according to the application, various laminated films can be produced. For example, by using a conductive layer as a thin film, a laminated film as a conductive film can be efficiently produced. Example

以下，用實施例對本發明詳細地進行說明，但本發明只要不超出其主旨，則不限定於以下之實施例。Hereinafter, the present invention will be described in detail using examples. However, the present invention is not limited to the following examples unless the gist thereof is exceeded.

＜實施例1：單面附保護膜之兩面導電性膜之製作＞ (導電層之形成) 作為樹脂膜，使用厚度150 μm、寬度1100 mm之退火PET膜(東麗膜加工公司製造，「150-TT00A」)，對其單面進行濺鍍成膜，形成導電層。作為濺鍍條件，如下所述。使濺鍍裝置內為3.0×10^-3 Torr以下(0.4 Pa以下)之高真空，於該狀態下，一面將長條狀樹脂膜自送出輥送向捲取輥，一面進行濺鍍成膜。於包含Ar氣體100體積%之3.0×10^-3 Torr之氛圍中，使用Cu靶材料，藉由燒結體DC磁控濺鍍法，於單面將導電層以150 nm之厚度濺鍍成膜。將成膜後之膜捲取到捲取輥上，由此製作於一個面形成有導電層之單面導電性膜之捲繞體。<Example 1: Preparation of a double-sided conductive film with a protective film attached to one side> (Formation of conductive layer) As the resin film, an annealed PET film with a thickness of 150 μm and a width of 1100 mm (manufactured by Toray Film Processing Co., Ltd., "150 -TT00A"), perform sputtering on one side to form a conductive layer. The sputtering conditions are as follows. The inside of the sputtering device is maintained at a high vacuum of 3.0×10 ^-3 Torr or less (0.4 Pa or less). In this state, sputtering film formation is performed while feeding the long resin film from the feed roller to the winding roller. In an atmosphere of 3.0×10 ^-3 Torr containing 100 volume % of Ar gas, using Cu target material, the conductive layer was sputtered to a thickness of 150 nm on one side by the sintered body DC magnetron sputtering method. The formed film is wound up on a winding roller, thereby producing a rolled body of a single-sided conductive film having a conductive layer formed on one surface.

(保護膜之貼合) 將表1所示之包含抗氧化劑之保護膜(東麗公司製造，「MS05」)貼合於藉由濺鍍成膜形成之導電層上。作為貼合條件，如下所示。一面將製作之單面導電性膜自送出輥送向捲取輥，一面於其間以0.3 MPa之壓力將保護膜貼合於導電層面(濺鍍面)，將膜捲取至捲取輥上，由此製作於單面導電性膜之導電面(濺鍍面)上貼合有作為最外層之保護膜之積層體之捲繞體。(Laying of protective film) A protective film containing an antioxidant shown in Table 1 (manufactured by Toray Industries, "MS05") was bonded to the conductive layer formed by sputtering. The bonding conditions are as follows. On the one hand, the produced single-sided conductive film is sent from the feed roller to the winding roller, and on the other hand, the protective film is attached to the conductive layer (sputtering surface) with a pressure of 0.3 MPa, and the film is wound onto the winding roller. In this way, a rolled body is produced in which a laminate of a protective film as the outermost layer is bonded to the conductive surface (sputtering surface) of the single-sided conductive film.

(導電層之形成) 於製作之單面導電性膜之捲繞體之與導電層配設面相反之側，於與形成上述導電層相同之條件下以140 nm之厚度將導電層濺鍍成膜，藉此製作於樹脂膜之兩面形成有導電層，於單面貼合有保護膜之單面附保護膜之兩面導電性膜之捲繞體。(Formation of conductive layer) On the side of the roll of the single-sided conductive film that is opposite to the surface where the conductive layer is arranged, the conductive layer is sputtered to a thickness of 140 nm under the same conditions as for forming the above-mentioned conductive layer, thereby producing a A conductive layer is formed on both sides of a resin film, and a roll of a conductive film on both sides with a protective film attached to one side is bonded to one side.

＜實施例2＞ 作為保護膜，使用表1所示之包含抗氧化劑之東麗公司製造，「MS05」，除此以外利用與實施例1同樣之製法製作單面附保護膜之兩面導電性膜之半裁捲繞體。<Example 2> As the protective film, "MS05" produced by Toray Corporation containing an antioxidant shown in Table 1 was used, except that the same production method as in Example 1 was used to prepare a half-cut roll of a double-sided conductive film with a protective film on one side. .

＜比較例1＞ 作為保護膜，使用表1所示之包含抗氧化劑之FUTAMURA公司製造，「FSA020M」，除此以外利用與實施例1同樣之製法製作單面附保護膜之兩面導電性膜之半裁捲繞體。＜Comparative example 1＞ As a protective film, "FSA020M" produced by FUTAMURA Corporation containing an antioxidant shown in Table 1 was used, except that the same manufacturing method as in Example 1 was used to prepare a half-cut roll of a double-sided conductive film with a protective film on one side.

＜比較例2＞ 作為保護膜，使用表1所示之包含抗氧化劑之FUTAMURA公司製造，「FSA020M」，除此以外利用與實施例1同樣之製法製作單面附保護膜之兩面導電性膜之半裁捲繞體。＜Comparative example 2＞ As a protective film, "FSA020M" produced by FUTAMURA Corporation containing an antioxidant shown in Table 1 was used, except that the same manufacturing method as in Example 1 was used to prepare a half-cut roll of a double-sided conductive film with a protective film on one side.

＜評價＞ 對製作之附保護膜之導電性膜進行以下之評價。將各自之結果示於表1。＜Evaluation＞ The following evaluation was performed on the produced conductive film with a protective film. The respective results are shown in Table 1.

(1)於大氣壓下之抗氧化劑之沸點或熱分解點之測定 依據「OECD試驗指南103」測定沸點或熱分解點。另外，抗氧化劑為已知之情形，使用化學品數據基礎、或製品安全數據表等中收錄之標稱值。再者，大氣壓為1013 hPa。(1) Determination of the boiling point or thermal decomposition point of antioxidants under atmospheric pressure Determine the boiling point or thermal decomposition point according to "OECD Test Guideline 103". In addition, if the antioxidant is known, use the nominal value recorded in the Chemical Data Base or Product Safety Data Sheet. Furthermore, the atmospheric pressure is 1013 hPa.

(2)於真空下(1.3 Pa)之抗氧化劑之沸點或熱分解點之計算 圖4所示之「沸點換算圖表」(出處：Science of Petroleum, Vol. II. p.1281 (1938))中，於B線上取在上述(1)中求出之大氣壓下之沸點，用直線連接該沸點與C線上之減壓度(1.3 Pa)，將該直線與A線之交點作為於減壓下(1.3 Pa)之沸點求出。(2) Calculation of boiling point or thermal decomposition point of antioxidant under vacuum (1.3 Pa) In the "Boiling Point Conversion Chart" shown in Figure 4 (Source: Science of Petroleum, Vol. II. p.1281 (1938)), take the boiling point at atmospheric pressure calculated in the above (1) on line B, and use a straight line The boiling point is connected to the degree of reduced pressure (1.3 Pa) on line C, and the intersection point of this straight line and line A is determined as the boiling point under reduced pressure (1.3 Pa).

(3)污染發生有無之觀察 藉由目視觀察於濺鍍步驟中之輸送輥表面之附著物之有無。將未觀察到附著物之情形評價為「無污染」，將觀察到附著物之情形評價為「有污染」。(3) Observation of whether pollution occurs or not Observe visually whether there are attachments on the surface of the conveyor roller during the sputtering step. The case where no adherent matter is observed is evaluated as "no contamination", and the case where adhering matter is observed is evaluated as "contaminated".

[表1] [Table 1]

(結果) 根據表1，實施例之導電性膜未產生輥之污染。另一方面，比較例中產生污染。根據以上，推測實施例之導電性膜之污染評價結果起因於藉由促進抗氧化劑自保護膜表面之擴散從而減少或抑制對輥之附著。(result) According to Table 1, the conductive films of the examples did not cause contamination of the rollers. On the other hand, contamination occurred in the comparative example. Based on the above, it is speculated that the contamination evaluation results of the conductive films of the examples are caused by promoting the diffusion of antioxidants from the protective film surface to reduce or inhibit adhesion to the roller.

1‧‧‧基材膜 2a、2b‧‧‧導電層 3‧‧‧保護膜 4a、4b‧‧‧基底層 10‧‧‧樹脂膜 101、102、103、201、202、203‧‧‧導電性膜 1‧‧‧Substrate film 2a, 2b‧‧‧Conductive layer 3‧‧‧Protective film 4a, 4b‧‧‧Basilar layer 10‧‧‧Resin film 101, 102, 103, 201, 202, 203‧‧‧Conductive film

圖1係本發明之一實施形態之樹脂膜之模式剖視圖。 圖2A係本發明之一實施形態之導電性膜之模式剖視圖。 圖2B係本發明之一實施形態之導電性膜之模式剖視圖。 圖2C係本發明之一實施形態之導電性膜之模式剖視圖。 圖3A係本發明之一實施形態之導電性膜之模式剖視圖。 圖3B係本發明之一實施形態之導電性膜之模式剖視圖。 圖3C係本發明之一實施形態之導電性膜之模式剖視圖。 圖4係用於求出在真空下之沸點之沸點換算圖表。Fig. 1 is a schematic cross-sectional view of a resin film according to an embodiment of the present invention. FIG. 2A is a schematic cross-sectional view of a conductive film according to an embodiment of the present invention. 2B is a schematic cross-sectional view of the conductive film according to one embodiment of the present invention. 2C is a schematic cross-sectional view of the conductive film according to one embodiment of the present invention. 3A is a schematic cross-sectional view of a conductive film according to an embodiment of the present invention. 3B is a schematic cross-sectional view of the conductive film according to one embodiment of the present invention. 3C is a schematic cross-sectional view of the conductive film according to one embodiment of the present invention. Figure 4 is a boiling point conversion chart used to determine the boiling point under vacuum.

10‧‧‧樹脂膜 10‧‧‧Resin film

Claims (9)

一種導電性膜，其具備：基材膜、配置於上述基材膜之一面側之導電層、及配置於上述導電層之與上述基材膜側相反之側及上述基材膜之另一面側中之至少一者之保護膜，其中上述保護膜為具備包含於大氣壓下之沸點或熱分解點為285℃以下之抗氧化劑之樹脂膜之保護膜。 A conductive film comprising: a base film, a conductive layer disposed on one side of the base film, and a side of the conductive layer opposite to the side of the base film and the other side of the base film. At least one of the protective films, wherein the protective film is a protective film having a resin film containing an antioxidant whose boiling point or thermal decomposition point under atmospheric pressure is 285°C or lower. 如請求項1之導電性膜，其中上述抗氧化劑之於1.3Pa之真空下之沸點或熱分解點為50℃以下。 The conductive film of claim 1, wherein the boiling point or thermal decomposition point of the above-mentioned antioxidant under a vacuum of 1.3 Pa is 50°C or less. 如請求項1之導電性膜，其中上述基材膜為具備包含於大氣壓下之沸點或熱分解點為285℃以下之抗氧化劑之樹脂膜之基材膜。 The conductive film according to claim 1, wherein the base film is a base film having a resin film containing an antioxidant whose boiling point or thermal decomposition point under atmospheric pressure is 285°C or lower. 如請求項1之導電性膜，其中上述保護膜之厚度為5μm以上且55μm以下。 The conductive film of claim 1, wherein the thickness of the protective film is 5 μm or more and 55 μm or less. 如請求項1之導電性膜，其中上述保護膜之形成材料為烯烴系樹脂、聚酯系樹脂或環烯烴系樹脂。 The conductive film of claim 1, wherein the protective film is formed from an olefin resin, a polyester resin or a cycloolefin resin. 如請求項1之導電性膜，其中上述保護膜之與鄰接層接觸之側之面具 有黏著性，上述保護膜與上述鄰接層之間之剝離力為1N/50mm以下。 The conductive film of claim 1, wherein the mask of the side of the protective film in contact with the adjacent layer It is adhesive, and the peeling force between the above protective film and the above adjacent layer is 1N/50mm or less. 如請求項1至6中任一項之導電性膜，其中上述導電層為濺鍍膜。 The conductive film according to any one of claims 1 to 6, wherein the conductive layer is a sputtered film. 一種積層膜之製造方法，其包括如下步驟：準備貼合有保護膜之基材膜之步驟，該保護膜具備包含於大氣壓下之沸點或熱分解點為285℃以下之抗氧化劑之樹脂膜，及於上述基材膜之至少一面側藉由真空製程形成導電層之步驟。 A method for manufacturing a laminated film, which includes the following steps: preparing a base film to be bonded with a protective film having a resin film containing an antioxidant whose boiling point or thermal decomposition point under atmospheric pressure is 285°C or lower, and the step of forming a conductive layer on at least one side of the base film through a vacuum process. 如請求項8之積層膜之製造方法，其中上述真空製程為濺鍍。 As claimed in claim 8, the method for manufacturing a laminated film, wherein the vacuum process is sputtering.