TWI820004B - resin composition - Google Patents

resin composition Download PDF

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TWI820004B
TWI820004B TW106127065A TW106127065A TWI820004B TW I820004 B TWI820004 B TW I820004B TW 106127065 A TW106127065 A TW 106127065A TW 106127065 A TW106127065 A TW 106127065A TW I820004 B TWI820004 B TW I820004B
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resin
resin composition
group
mass
layer
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TW106127065A
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TW201819532A (en
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阪內啓之
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日商味之素股份有限公司
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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L79/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen or carbon only, not provided for in groups C08L61/00 - C08L77/00
    • C08L79/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
    • C08L79/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L69/00—Compositions of polycarbonates; Compositions of derivatives of polycarbonates
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
    • C08G59/62—Alcohols or phenols
    • C08G59/621—Phenols
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/01—Use of inorganic substances as compounding ingredients characterized by their specific function
    • C08K3/013—Fillers, pigments or reinforcing additives
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/16—Nitrogen-containing compounds
    • C08K5/29—Compounds containing one or more carbon-to-nitrogen double bonds
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L71/00—Compositions of polyethers obtained by reactions forming an ether link in the main chain; Compositions of derivatives of such polymers
    • C08L71/08—Polyethers derived from hydroxy compounds or from their metallic derivatives
    • C08L71/10—Polyethers derived from hydroxy compounds or from their metallic derivatives from phenols
    • C08L71/12—Polyphenylene oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H01L23/295—Organic, e.g. plastic containing a filler
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/0313—Organic insulating material
    • H05K1/0353—Organic insulating material consisting of two or more materials, e.g. two or more polymers, polymer + filler, + reinforcement
    • H05K1/0373—Organic insulating material consisting of two or more materials, e.g. two or more polymers, polymer + filler, + reinforcement containing additives, e.g. fillers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L2203/00—Applications
    • C08L2203/20—Applications use in electrical or conductive gadgets
    • C08L2203/206—Applications use in electrical or conductive gadgets use in coating or encapsulating of electronic parts
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L2205/00—Polymer mixtures characterised by other features
    • C08L2205/02—Polymer mixtures characterised by other features containing two or more polymers of the same C08L -group
    • C08L2205/025—Polymer mixtures characterised by other features containing two or more polymers of the same C08L -group containing two or more polymers of the same hierarchy C08L, and differing only in parameters such as density, comonomer content, molecular weight, structure
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L2205/00—Polymer mixtures characterised by other features
    • C08L2205/03—Polymer mixtures characterised by other features containing three or more polymers in a blend
    • C08L2205/035—Polymer mixtures characterised by other features containing three or more polymers in a blend containing four or more polymers in a blend

Abstract

本發明的課題為提供一種抑制翹曲，強度及密著性優異之樹脂組成物；使用該組成物之樹脂薄片、電路基板及半導體晶片封裝。 　　本發明的解決手段係關於含有(a)於分子內具有聚碳酸酯構造之彈性體、(b)環氧樹脂、(c)無機填充材、(d)苯氧基樹脂及(e)碳二亞胺化合物之樹脂組成物等。An object of the present invention is to provide a resin composition that suppresses warpage and is excellent in strength and adhesion; a resin sheet, a circuit board, and a semiconductor chip package using the composition. The solution of the present invention relates to an elastomer containing (a) an elastomer having a polycarbonate structure in the molecule, (b) an epoxy resin, (c) an inorganic filler, (d) a phenoxy resin, and (e) carbon dioxide. Resin compositions of imine compounds, etc.

Description

樹脂組成物resin composition

[0001] 本發明係關於樹脂組成物。進而係關於使用樹脂組成物之樹脂薄片、電路基板及半導體晶片封裝。[0001] The present invention relates to a resin composition. Furthermore, it relates to resin sheets, circuit substrates and semiconductor chip packages using resin compositions.

[0002] 近年來，所謂智慧型手機、平板PC之小型高機能電子裝置的需要增大，伴隨此，此等小型之電子裝置所使用之半導體封裝用絕緣材料(絕緣層)亦正尋求更高機能化。 　　例如，扇出(Fan-out)型晶圓等級晶片尺寸封裝(Wafer Level Package)所使用之模具密封用之絕緣層，尋求翹曲之抑制、將樹脂晶圓從暫時固定膠帶剝離時之充分的強度、對再配線用絕緣層(例如氮化矽或聚醯亞胺等)之充分的密著性。又，具備嵌入型之配線層之配線板所使用之絕緣層，尋求翹曲之抑制、剝離芯基板時之充分的強度、對銅之充分的密著性。 　　專利文獻1中，揭示有作為低彈性率之熱硬化性樹脂組成物，含有特定之線狀改質聚醯亞胺樹脂與熱硬化性樹脂之熱硬化性樹脂組成物。然而，如此之低彈性率的絕緣材料，從與其他樹脂之相溶性的觀點來看，尚未達到限定樹脂組成物之設計，至滿足所要求之特性，乃為現狀。 [先前技術文獻] [專利文獻] 　　[0003] 　　[專利文獻1]日本特開2006-37083號公報[0002] In recent years, the demand for small high-performance electronic devices such as smart phones and tablet PCs has increased. With this, the insulating materials (insulating layers) for semiconductor packages used in these small electronic devices are also seeking higher quality. Functionalization. For example, the insulating layer for mold sealing used in the fan-out type wafer level package (Wafer Level Package) seeks to suppress warpage and provide sufficient strength when peeling off the resin wafer from the temporary fixing tape. Strength and sufficient adhesion to the insulating layer for rewiring (such as silicon nitride or polyimide, etc.). In addition, the insulating layer used in a wiring board having an embedded wiring layer requires suppression of warpage, sufficient strength when the core substrate is peeled off, and sufficient adhesion to copper. Patent Document 1 discloses a thermosetting resin composition containing a specific linear modified polyimide resin and a thermosetting resin as a low elastic modulus thermosetting resin composition. However, from the viewpoint of compatibility with other resins, the insulating material with such a low elastic modulus has not yet reached the design limit of the resin composition to satisfy the required characteristics. This is the current situation. [Prior Art Document] [Patent Document] [0003] [Patent Document 1] Japanese Patent Application Publication No. 2006-37083

[發明欲解決之課題] 　　[0004] 本發明係解決上述課題而完成者，提供一種抑制翹曲，強度及密著性優異之樹脂組成物、使用該樹脂組成物之樹脂薄片、電路基板及半導體晶片封裝。 [用以解決課題之手段] 　　[0005] 本發明者們發現，含有(a)於分子內具有聚碳酸酯構造之彈性體、(b)環氧樹脂、(c)無機填充材、(d)苯氧基樹脂及(e)碳二亞胺化合物之樹脂組成物，抑制翹曲，強度及密著性優異，而終至完成本發明。 　　[0006] 亦即，本發明係包含以下之內容。 　　[1] 一種樹脂組成物，其係含有(a)於分子內具有聚碳酸酯構造之彈性體、(b)環氧樹脂、(c)無機填充材、(d)苯氧基樹脂及(e)碳二亞胺化合物。 　　[2] 如[1]所記載之樹脂組成物，其中，(c)成分的含量係將樹脂組成物之不揮發成分定為100質量%的情況下，為75質量%～95質量%。 　　[3] 如[1]或[2]所記載之樹脂組成物，其中，(a)成分的含量係將去除(c)成分之樹脂組成物之不揮發成分定為100質量%的情況下，為30質量%～85質量%。 　　[4] 如[1]～[3]中任一項記載之樹脂組成物，其中，使樹脂組成物於180℃熱硬化1小時之硬化物在23℃之彈性率為8GPa以上。 　　[5] 如[1]～[4]中任一項記載之樹脂組成物，其中，(a)成分係具有式(1-a)表示之構造及式(1-b)表示之構造的樹脂，[式中，R1係表示去除聚碳酸酯二醇的羥基之殘基，R2係表示去除多元酸或其酐的羧基或酸酐基之殘基，R3係表示去除二異氰酸酯化合物的異氰酸酯基之殘基]。 　　[6] 如[1]～[5]中任一項記載之樹脂組成物，其中，(a)成分具有可與(b)成分進行反應之官能基。 　　[7] 如[1]～[6]中任一項記載之樹脂組成物，其中，(a)成分具有酚性羥基。 　　[8] 如[1]～[7]中任一項記載之樹脂組成物，其係進一步包含(f)硬化劑，該硬化劑選自酚系硬化劑中之1種以上。 　　[9] 如[1]～[8]中任一項記載之樹脂組成物，其係半導體晶片封裝之絕緣層用樹脂組成物。 　　[10] 一種樹脂薄片，其係具有支持體、與樹脂組成物層，該樹脂組成物層係包含設置在該支持體上之如[1]～[9]中任一項記載之樹脂組成物。 　　[11] 如[10]所記載之樹脂薄片，其係半導體晶片封裝之絕緣層用樹脂薄片。 　　[12] 一種電路基板，其係包含藉由如[1]～[9]中任一項記載之樹脂組成物的硬化物形成之絕緣層。 　　[13] 一種半導體晶片封裝，其係於如[12]所記載之電路基板上搭載半導體晶片。 　　[14] 一種半導體晶片封裝，其係包含如[1]～[9]中任一項記載之樹脂組成物、或藉由[10]所記載之樹脂薄片密封之半導體晶片。 [發明的效果] 　　[0007] 根據本發明，可提供一種得到抑制翹曲，強度及密著性優異之硬化物(絕緣層)之樹脂組成物；使用該組成物之樹脂薄片、電路基板及半導體晶片封裝。[Problems to be Solved by the Invention] [0004] The present invention is accomplished by solving the above problems, and provides a resin composition that suppresses warpage and has excellent strength and adhesion, a resin sheet, a circuit board, and a semiconductor using the resin composition. Chip packaging. [Means for Solving the Problems] The inventors of the present invention have discovered that an elastomer containing (a) an elastomer having a polycarbonate structure in the molecule, (b) an epoxy resin, (c) an inorganic filler, and (d) The resin composition of a phenoxy resin and (e) a carbodiimide compound suppresses warpage and is excellent in strength and adhesion, and finally the present invention is completed. [0006] That is, the present invention includes the following contents. [1] A resin composition containing (a) an elastomer having a polycarbonate structure in the molecule, (b) epoxy resin, (c) inorganic filler, (d) phenoxy resin, and (e) ) carbodiimide compounds. [2] The resin composition according to [1], wherein the content of component (c) is 75 to 95 mass %, assuming that the non-volatile content of the resin composition is 100 mass %. [3] The resin composition as described in [1] or [2], wherein the content of component (a) is 100% by mass of the non-volatile content of the resin composition excluding component (c), It is 30 mass % to 85 mass %. [4] The resin composition according to any one of [1] to [3], wherein the cured product obtained by thermally curing the resin composition at 180°C for 1 hour has an elastic modulus of 8 GPa or more at 23°C. [5] The resin composition according to any one of [1] to [4], wherein the component (a) is a resin having a structure represented by formula (1-a) and a structure represented by formula (1-b) , [In the formula, R1 represents the residue obtained by removing the hydroxyl group of the polycarbonate diol, R2 represents the residue obtained by removing the carboxyl group or acid anhydride group of the polybasic acid or its anhydride, and R3 represents the residue obtained by removing the isocyanate group of the diisocyanate compound. ]. [6] The resin composition according to any one of [1] to [5], wherein the component (a) has a functional group capable of reacting with the component (b). [7] The resin composition according to any one of [1] to [6], wherein the component (a) has a phenolic hydroxyl group. [8] The resin composition according to any one of [1] to [7], further comprising (f) a curing agent, and the curing agent is at least one selected from the group consisting of phenolic curing agents. [9] The resin composition according to any one of [1] to [8], which is a resin composition for an insulating layer of a semiconductor chip package. [10] A resin sheet having a support and a resin composition layer, the resin composition layer including the resin composition described in any one of [1] to [9] provided on the support . [11] The resin sheet as described in [10], which is a resin sheet for an insulating layer of a semiconductor chip package. [12] A circuit board including an insulating layer formed of a cured product of the resin composition according to any one of [1] to [9]. [13] A semiconductor chip package in which a semiconductor chip is mounted on the circuit substrate as described in [12]. [14] A semiconductor chip package including the resin composition according to any one of [1] to [9], or a semiconductor chip sealed by the resin sheet according to [10]. [Effects of the Invention] According to the present invention, it is possible to provide a resin composition that obtains a cured product (insulating layer) that suppresses warpage and has excellent strength and adhesion; resin sheets, circuit boards and semiconductors using the composition Chip packaging.

[0008] 以下，針對本發明之樹脂組成物、樹脂薄片、電路基板及半導體晶片封裝進行詳細說明。 　　[0009] [樹脂組成物] 　　本發明之樹脂組成物可包含(a)於分子內具有聚碳酸酯構造之彈性體、(b)環氧樹脂、(c)無機填充材、(d)苯氧基樹脂及(e)碳二亞胺化合物。如有必要，可進一步包含(f)硬化劑、(g)硬化促進劑及(h)阻燃劑。以下，針對樹脂組成物所包含之各成分進行詳細說明。 　　[0010] ＜(a)於分子內具有聚碳酸酯構造之彈性體＞ 　　本發明之樹脂組成物係包含(a)於分子內具有聚碳酸酯構造之彈性體。藉由包含如(a)成分之柔軟樹脂，可得到絕緣信賴性優異，抑制翹曲的發生，線熱膨脹係數低之絕緣層。 　　在本發明，彈性體較佳為具有橡膠彈性之樹脂、或進行聚合或固形化而顯示橡膠彈性之樹脂。作為橡膠彈性，例如依據日本工業規格(JIS K7161)，在溫度25℃、濕度40%RH，進行拉伸試驗的情況下，較佳為顯示1GPa以下之彈性率之樹脂。 　　[0011] (a)成分之彈性體從抑制翹曲的觀點來看，較佳為選自玻璃轉移溫度(Tg)為25℃以下之樹脂及於25℃為液狀之樹脂中之1種以上的樹脂。 　　[0012] 玻璃轉移溫度(Tg)為25℃以下之樹脂的玻璃轉移溫度較佳為20℃以下，更佳為15℃以下。玻璃轉移溫度的下限雖並未特別限定，但通常可成為-15℃以上。又，作為於25℃為液狀之樹脂，較佳為於20℃以下為液狀之樹脂，更佳為於15℃以下為液狀之樹脂。 　　[0013] 作為(a)成分之適合的一實施形態，係具有式(1-a)表示之構造(胺基甲酸乙酯及聚碳酸酯構造以下有時簡稱為「構造(1-a)」)及式(1-b)表示之構造(醯亞胺構造以下有時簡稱為「構造(1-b)」)的樹脂。 　　[0014][0015] [式中，R1係表示去除聚碳酸酯二醇的羥基之殘基，R2係表示去除多元酸或其酐的羧基或酸酐基之殘基，R3係表示去除二異氰酸酯化合物的異氰酸酯基之殘基]。 　　尚，上述化學式之末端並非甲基而是表示鍵結位置。其他化學式亦相同。 　　[0016] 前述聚碳酸酯二醇之數平均分子量，從樹脂組成物之硬化物之柔軟性的觀點及從成分(A)之溶劑溶解性的觀點來看，較佳為500～5,000，更佳為1,000～3,000。前述聚碳酸酯二醇之羥基當量，從樹脂組成物之硬化物之柔軟性的觀點及從耐藥品性的觀點來看，較佳為250～1,250，更佳為500～1,000。 　　[0017] 作為前述二異氰酸酯化合物，例如可列舉甲苯-2,4-二異氰酸酯、甲苯-2,6-二異氰酸酯、苯二甲基二異氰酸酯、二苯基甲烷二異氰酸酯等之芳香族二異氰酸酯；六亞甲基二異氰酸酯等之脂肪族二異氰酸酯；異佛爾酮二異氰酸酯等之脂環式二異氰酸酯。此等當中，較佳為芳香族二異氰酸酯，更佳為甲苯-2,4-二異氰酸酯。 　　[0018] 作為前述多元酸或其酐，例如可列舉苯均四酸、二苯甲酮四羧酸、聯苯四羧酸、萘四羧酸、5-(2,5-二氧四氫呋喃基)-3-甲基-環己烯-1,2-二羧酸、3,3’-4,4’-二苯基碸四羧酸等之四元酸及此等之酐、偏苯三酸、環己烷三羧酸等之三元酸及此等之酐、1,3,3a,4,5,9b-六氫-5-(四氫-2,5-二氧代-3-呋喃基)-萘并(1,2-C)呋喃-1,3-二酮等。此等當中，較佳為四元酸酐，更佳為四元酸二酐，再更佳為二苯甲酮四羧酸二酐。 　　[0019] R1較佳為式(1-c)表示之2價基，[0020] [式中，k+1個之R4分別獨立表示可具有取代基之碳數1～20之伸烷基，k係表示5～30之整數]。 　　[0021] R4之伸烷基可為直鏈狀，亦可為分枝鏈狀。作為R4之伸烷基可具有之取代基，例如可列舉鹵素原子、碳數4～8之環烷基、碳數6～14之芳基。R4之伸烷基較佳為無取代。 　　[0022] 作為鹵素原子，例如可列舉氟原子、氯原子、溴原子、碘原子。 　　作為碳數4～8之環烷基，例如可列舉環戊基、環己基、環庚基。 　　作為碳數6～14之芳基，例如可列舉苯基、1-萘基、2-萘基、1-蔥基、2-蔥基、9-蔥基。 　　[0023] k+1個之R4分別獨立為，較佳為碳數1～20之伸烷基，更佳為碳數2～18之伸烷基，再更佳為碳數3～16之伸烷基。k較佳為5～25之整數，更佳為5～20之整數。 　　[0024] R2較佳為選自由下述式中之任一種表示之4價基的群組中之1種以上， 　　[0025][0026] [式中，A係表示氧原子、硫原子、CO、SO、SO2 、CH2 、CH(CH3 )、C(CH3 )2 、C(CF3 )2 、或C(CCl3 )2 。式中，與碳原子鍵結之氫原子可用選自鹵素原子及碳數1～8之烷基中之取代基取代]。 　　[0027] 上述式表示之R2(4價基)當中，較佳為具有芳香環之4價基，更佳為具有2個以上芳香環之4價基，最佳為下述式表示之4價基， 　　[0028][0029] [式中，A係表示氧原子、硫原子、CO、SO、SO2 、CH2 、CH(CH3 )、C(CH3 )2 、C(CF3 )2 ，或C(CCl3 )2 。式中，與碳原子鍵結之氫原子可用選自鹵素原子及碳數1～8之烷基中之取代基取代]。 　　[0030] A較佳為CO。 　　[0031] 與上述式中之碳原子鍵結之氫原子(即，與R2之4價基中之碳原子鍵結之氫原子)，可用選自鹵素原子及碳數1～8之烷基中之取代基取代。該氫原子較佳為未被取代。 　　[0032] 作為鹵素原子，可列舉上述者。 　　烷基可為直鏈狀亦可為分枝鏈。作為碳數1～8之烷基，例如可列舉甲基、乙基、丙基、異丙基、丁基、異丁基、sec-丁基、tert-丁基、戊基、異戊基、新戊基、1-乙基丙基、己基、異己基、1,1-二甲基丁基、2,2-二甲基丁基、3,3-二甲基丁基、2-乙基丁基、庚基、辛基。 　　[0033] R3較佳為選自由下述式中之任一種表示之2價基的群組中之1種以上， 　　[0034][0035] [式中，與碳原子鍵結之氫原子可用選自鹵素原子及碳數1～8之烷基中之取代基取代]。 　　尚，上述式之末端並非甲基而是表示鍵結位置。例如，上述式之最後並非辛烷，而是表示六亞甲基。 　　[0036] 與上述式中之碳原子鍵結之氫原子(即，與R3之2價基中之碳原子鍵結之氫原子)，可用選自鹵素原子及碳數1～8之烷基中之取代基(較佳為碳數1～8之烷基，更佳為碳數1～6之烷基，最佳為甲基)取代。 　　[0037] 作為鹵素原子及碳數1～8之烷基，可列舉上述者。作為碳數1～6之烷基，例如可列舉甲基、乙基、丙基、異丙基、丁基、異丁基、sec-丁基、tert-丁基、戊基、異戊基、新戊基、1-乙基丙基、己基、異己基、1,1-二甲基丁基、2,2-二甲基丁基、3,3-二甲基丁基、2-乙基丁基。 　　[0038] 上述式表示之R3(2價基)當中，較佳為具有芳香環或脂環式環之2價基，更佳為具有脂環式環之2價有機基。具有芳香環之2價基的情況下，較佳為下述式之任一種表示之2價基， 　　[0039][0040] [式中，與碳原子鍵結之氫原子可用碳數1～8之烷基(較佳為碳數1～6之烷基，更佳為甲基)取代]。 　　特佳為4-甲基-1,3-伸苯基(即，去除甲苯-2,4-二異氰酸酯的異氰酸酯基之殘基)。 　　[0041] 作為(a)成分，較佳為具有可與後述之(b)成分進行反應之官能基。 　　[0042] 在適合之一實施形態，可與(b)成分進行反應之官能基，為選自由羥基(更佳為酚性羥基)、羧基、酸酐基、胺基、環氧基、異氰酸酯基及胺基甲酸乙酯基所構成之群組中之1種以上的官能基。其中，作為該官能基，較佳為羥基、酸酐基、環氧基、異氰酸酯基，更佳為羥基、酸酐基、環氧基。 　　[0043] 數平均分子量(Mn)較佳為1,000～100,000，更佳為5,000～50,000，更佳為7,500～30,000，再更佳為10,000～15,000。於此，樹脂之數平均分子量(Mn)係使用GPC(凝膠滲透層析)測定之聚苯乙烯換算的數平均分子量。 　　[0044] 具有官能基時之官能基當量較佳為100～10000，更佳為200～5000。尚，所謂官能基當量，係包含1克當量之官能基的樹脂之克數。例如，環氧基當量可依JIS K7236測定。羥基當量可藉由以依JIS K1557-1測定之羥基價除以KOH的分子量算出。 　　[0045] 作為(a)成分之適合的一實施形態，較佳為玻璃轉移溫度為25℃以下之聚碳酸酯樹脂，較佳為選自由含有羥基之聚碳酸酯樹脂(更佳為含有酚性羥基之聚碳酸酯樹脂)、含有羧基之聚碳酸酯樹脂、含有酸酐基之聚碳酸酯樹脂、含有環氧基之聚碳酸酯樹脂、含有異氰酸酯基之聚碳酸酯樹脂及含有胺基甲酸乙酯基之聚碳酸酯樹脂所構成之群組中之1種以上的樹脂。於此，所謂「聚碳酸酯樹脂」，係指含有聚碳酸酯構造之樹脂，在此等之樹脂，聚碳酸酯構造可包含在主鏈，亦可包含在側鏈。 　　[0046] 樹脂組成物中之(a)成分的含量從賦予柔軟性的觀點來看，將去除(c)成分之樹脂組成物的不揮發成分定為100質量%的情況下，較佳為85質量%以下，更佳為80質量%以下，再更佳為75質量%以下，又再更佳為73質量%以下。又，下限較佳為30質量%以上，更佳為35質量%以上，再更佳為45質量%以上，又再更佳為55質量%以上。 　　[0047] ＜(b)環氧樹脂＞ 　　樹脂組成物係包含環氧樹脂。作為環氧樹脂，例如可列舉雙酚A型環氧樹脂、雙酚F型環氧樹脂、雙酚S型環氧樹脂、雙酚AF型環氧樹脂、雙環戊二烯型環氧樹脂、參酚型環氧樹脂、萘酚酚醛清漆型環氧樹脂、酚酚醛清漆型環氧樹脂、具有酯骨架之脂環式環氧樹脂、tert-丁基-兒茶酚型環氧樹脂、萘型環氧樹脂、萘酚型環氧樹脂、蔥型環氧樹脂、縮水甘油胺型環氧樹脂、縮水甘油酯型環氧樹脂、甲酚酚醛清漆型環氧樹脂、聯苯型環氧樹脂、線狀脂肪族環氧樹脂、具有丁二烯構造之環氧樹脂、脂環式環氧樹脂、雜環式環氧樹脂、含有螺環之環氧樹脂、環己烷二甲醇型環氧樹脂、伸萘醚型環氧樹脂、三羥甲基型環氧樹脂、四苯基乙烷型環氧樹脂等。環氧樹脂可1種單獨使用，亦可組合2種以上使用。 　　[0048] 環氧樹脂較佳為包含於1分子中具有2個以上環氧基之環氧樹脂。將環氧樹脂的不揮發成分定為100質量%的情況下，較佳為至少50質量%以上為於1分子中具有2個以上環氧基之環氧樹脂。其中，較佳為包含於1分子中具有2個以上環氧基，且於溫度20℃為液狀之環氧樹脂(以下稱為「液狀環氧樹脂」)、與於1分子中具有3個以上環氧基，且於溫度20℃為固體狀之環氧樹脂(以下稱為「固體狀環氧樹脂」)。作為環氧樹脂，藉由併用液狀環氧樹脂與固體狀環氧樹脂，而得到具有優異可撓性之樹脂組成物。又，亦提昇樹脂組成物之硬化物的斷裂強度。 　　[0049] 作為液狀環氧樹脂，較佳為雙酚A型環氧樹脂、雙酚F型環氧樹脂、雙酚AF型環氧樹脂、萘型環氧樹脂、具有芳香族構造之縮水甘油酯型環氧樹脂、具有芳香族構造之縮水甘油胺型環氧樹脂、酚酚醛清漆型環氧樹脂、具有芳香族構造之具有酯骨架之脂環式環氧樹脂、具有具芳香族構造之環己烷二甲醇型環氧樹脂及具有芳香族構造之丁二烯構造之環氧樹脂，更佳為雙酚A型環氧樹脂、雙酚F型環氧樹脂、雙酚AF型環氧樹脂及萘型環氧樹脂，再更佳為雙酚A型環氧樹脂、雙酚F型環氧樹脂。作為液狀環氧樹脂之具體例，可列舉DIC公司製之「HP4032」、「HP4032D」、「HP4032SS」(萘型環氧樹脂)、三菱化學公司製之「828US」、「jER828EL」(雙酚A型環氧樹脂)、「JER806」、「jER807」(雙酚F型環氧樹脂)、「jER152」(酚酚醛清漆型環氧樹脂)、「630」、「630LSD」(胺基酚型環氧樹脂)、新日鐵住金化學公司製之「ZX1059」(雙酚A型環氧樹脂與雙酚F型環氧樹脂之混合品)、Nagase ChemteX公司製之「EX-721」(縮水甘油酯型環氧樹脂)、Daicel公司製之「Celoxide2021P」(具有酯骨架之脂環式環氧樹脂)、新日鐵化學公司製之「ZX1658」、「ZX1658GS」(液狀1,4-縮水甘油環己烷)。此等可1種單獨使用，亦可組合2種以上使用。 　　[0050] 樹脂組成物中之液狀環氧樹脂的含量，將樹脂組成物中之不揮發成分定為100質量%時，從提昇(a)成分之相溶性的觀點來看，較佳為1質量%以上，更佳為2質量%以上，再更佳為2.5質量%以上。環氧樹脂的含量的上限，只要能發揮本發明的效果，雖並未特別限定，但較佳為15質量%以下，更佳為10質量%以下，再更佳為5質量%以下。 　　[0051] 液狀環氧樹脂的環氧當量較佳為50～5000，更佳為50～3000，再更佳為80～2000，又再更佳為110～1000。藉由成為此範圍，樹脂組成物之硬化物的交聯密度變充分，將硬化物作為絕緣層使用時，可帶來表面粗糙度較小之絕緣層。尚，液狀環氧樹脂之環氧當量可依JIS K7236測定，為包含1當量之環氧基之樹脂的質量。 　　[0052] 液狀環氧樹脂之重量平均分子量較佳為100～5000，更佳為250～3000，再更佳為400～1500。於此，液狀環氧樹脂之重量平均分子量係藉由凝膠滲透層析(GPC)法測定之聚苯乙烯換算的重量平均分子量。 　　[0053] 作為固體狀環氧樹脂，較佳為萘型4官能環氧樹脂、甲酚酚醛清漆型環氧樹脂、具有芳香族構造之雙環戊二烯型環氧樹脂、參酚型環氧樹脂、萘酚型環氧樹脂、聯苯型環氧樹脂、伸萘醚型環氧樹脂、蔥型環氧樹脂、雙酚A型環氧樹脂、雙酚AF型環氧樹脂、四苯基乙烷型環氧樹脂，更佳為萘型4官能環氧樹脂、萘酚型環氧樹脂及聯苯型環氧樹脂、伸萘醚型環氧樹脂，再更佳為萘型4官能環氧樹脂、伸萘醚型環氧樹脂。作為固體狀環氧樹脂之具體例，可列舉DIC公司製之「HP4032H」(萘型環氧樹脂)、「HP-4700」、「HP-4710」(萘型4官能環氧樹脂)、「N-690」(甲酚酚醛清漆型環氧樹脂)、「N-695」(甲酚酚醛清漆型環氧樹脂)、「HP-7200」、「HP-7200L」、「HP-7200HH」、「HP-7200H」、「HP-7200HHH」(雙環戊二烯型環氧樹脂)、「EXA7311」、「EXA7311-G3」、「EXA7311-G4」、「EXA7311-G4S」、「HP6000」(伸萘醚型環氧樹脂)、日本化藥公司製之「EPPN-502H」(參酚型環氧樹脂)、「NC7000L」(萘酚酚醛清漆型環氧樹脂)、「NC3000H」、「NC3000」、「NC3000L」、「NC3100」(聯苯型環氧樹脂)、新日鐵住金化學公司製之「ESN475V」(萘酚型環氧樹脂)、「ESN485」(萘酚酚醛清漆型環氧樹脂)、三菱化學公司製之「YX4000H」、「YL6121」(聯苯型環氧樹脂)、「YX4000HK」(二甲酚型環氧樹脂)、「YL7760」(雙酚AF型環氧樹脂)、「YX8800」(蔥型環氧樹脂)、大阪Gas Chemicals公司製之「PG-100」、「CG-500」、三菱化學公司製之「YL7800」(茀型環氧樹脂)、三菱化學公司製之「jER1010」(固體狀雙酚A型環氧樹脂)、「jER1031S」(四苯基乙烷型環氧樹脂)、「157S70」(雙酚酚醛清漆型環氧樹脂)、三菱化學公司製之「YX4000HK」(二甲酚型環氧樹脂)、「YX8800」(蔥型環氧樹脂)、大阪Gas Chemicals公司製之「PG-100」、「CG-500」、三菱化學公司製之「YL7800」(茀型環氧樹脂)、三菱化學公司製之「jER1031S」(四苯基乙烷型環氧樹脂)等。此等可1種單獨使用，亦可組合2種以上使用。 　　[0054] 樹脂組成物中之固體狀環氧樹脂的含量，將樹脂組成物中之不揮發成分定為100質量%時，從調整樹脂組成物黏度的觀點來看，較佳為0.1質量%以上，更佳為0.2質量%以上，再更佳為0.3質量%以上。環氧樹脂的含量的上限，只要能發揮本發明的效果，雖並未特別限定，但較佳為10質量%以下，更佳為5質量%以下，再更佳為1質量%以下。 　　[0055] 固體狀環氧樹脂之環氧當量較佳為50～5000，更佳為50～3000，再更佳為80～2000，又再更佳為110～1000。藉由成為此範圍，硬化物的交聯密度變充分，可帶來表面粗糙度較小之絕緣層。尚，固體狀環氧樹脂之環氧當量可依JIS K7236測定，為包含1當量之環氧基之樹脂的質量。 　　[0056] 固體狀環氧樹脂之重量平均分子量較佳為100～5000，更佳為250～3000，再更佳為400～1500。於此，固體狀環氧樹脂之重量平均分子量係藉由凝膠滲透層析(GPC)法測定之聚苯乙烯換算的重量平均分子量。 　　[0057] 將液狀環氧樹脂的含量定為B1(質量%)，固體狀環氧樹脂的含量定為B2(質量%)時，從調整熔融黏度的觀點來看，較佳為滿足B1＞B2的關係。又，B1及B2的差(B1-B2)較佳為0.1質量%以上，更佳為0.2質量%以上，再更佳為0.3質量%以上、0.5質量%以上、或1質量%以上。差(B1-B2)的上限雖並未特別限定，但通常可成為10質量%以下、5質量%以下等。 　　[0058] 液狀環氧樹脂與固體狀環氧樹脂的量比(固體狀環氧樹脂/液狀環氧樹脂)，以質量比較佳為0.01～1的範圍。藉由將液狀環氧樹脂與固體狀環氧樹脂的量比定為該範圍，得到i)以樹脂薄片的形態使用時帶來適度的黏著性、ii)以樹脂薄片的形態使用時得到充分之可撓性，提昇操作性以及iii)可得到具有充分斷裂強度之硬化物等之效果。從上述i)～iii)之效果的觀點來看，液狀環氧樹脂與固體狀環氧樹脂的量比(固體狀環氧樹脂/液狀環氧樹脂)以質量比，更佳為0.05～0.8的範圍，再更佳為0.1～0.5的範圍。 　　[0059] ＜(c)無機填充材＞ 　　樹脂組成物包含(c)無機填充材。無機填充材之材料雖並未特別限定，但例如可列舉二氧化矽、氧化鋁、玻璃、堇青石、矽氧化物、硫酸鋇、碳酸鋇、滑石、黏土、雲母粉、氧化鋅、水滑石、勃姆石、氫氧化鋁、氫氧化鎂、碳酸鈣、碳酸鎂、氧化鎂、氮化硼、氮化鋁、氮化錳、硼酸鋁、碳酸鍶、鈦酸鍶、鈦酸鈣、鈦酸鎂、鈦酸鉍、氧化鈦、氧化鋯、鈦酸鋇、鈦酸鋯酸鋇、鋯酸鋇、鋯酸鈣、磷酸鋯及磷酸鎢酸鋯等。此等當中，適合二氧化矽或氧化鋁，尤其適合二氧化矽。又，作為二氧化矽，較佳為球形二氧化矽。無機填充材可1種單獨使用，亦可組合2種以上使用。 　　[0060] 無機填充材之平均粒徑，從提昇電路嵌入性，得到表面粗糙度低之絕緣層的觀點來看，較佳為5μm以下，更佳為2.5μm以下，再更佳為2.2μm以下，更佳為2μm以下。該平均粒徑的下限雖並未特別限定，但較佳為0.01μm以上，更佳為0.05μm以上，再更佳為0.1μm以上。作為具有如此之平均粒徑之無機填充材的市售品，例如可列舉Admatechs公司製「YC100C」、「YA050C」、「YA050C-MJE」、「YA010C」、電氣化學工業公司製「UFP-30」、德山公司製「Sifil NSS-3N」、「Sifil NSS-4N」、「Sifil NSS-5N」、Admatechs公司製「SC2500SQ」、「SO-C6」、「SO-C4」、「SO-C2」、「SO-C1」等。 　　[0061] 無機填充材之平均粒徑可根據米氏(Mie)散射理論藉由雷射繞射暨散射法測定。具體而言，藉由雷射繞射散射式粒度分布測定裝置，將無機填充材之粒度分布以體積基準作成，可藉由將其中位徑作為平均粒徑來測定。測定樣品較佳可使用將無機填充材藉由超音波而使其分散於水中者。作為雷射繞射散射式粒度分布測定裝置，可使用堀場製作所公司製「LA-500」等。 　　[0062] 無機填充材從提高耐濕性及分散性的觀點來看，較佳為以胺基矽烷系偶合劑、環氧矽烷系偶合劑、巰基矽烷系偶合劑、矽烷系偶合劑、烷氧基矽烷化合物、有機矽氮烷化合物、鈦酸酯系偶合劑等之1種以上的表面處理劑處理。作為表面處理劑之市售品，例如可列舉信越化學工業公司製「KBM403」(3-縮水甘油氧基丙基三甲氧基矽烷)、信越化學工業公司製「KBM803」(3-巰基丙基三甲氧基矽烷)、信越化學工業公司製「KBE903」(3-胺基丙基三乙氧基矽烷)、信越化學工業公司製「KBM573」(N-苯基-3-胺基丙基三甲氧基矽烷)、信越化學工業公司製「SZ-31」(六甲基二矽氮烷)、信越化學工業公司製「KBM103」(苯基三甲氧基矽烷)、信越化學工業公司製「KBM-4803」(長鏈環氧型矽烷偶合劑)等。 　　[0063] 藉由表面處理劑之表面處理的程度可藉由每一無機填充材之單位表面積之碳量來評估。每一無機填充材之單位表面積之碳量，從無機填充材之分散性提昇的觀點來看，較佳為0.02mg/m2 以上，更佳為0.1mg/m2 以上，再更佳為0.2mg/m2 以上。另外，從防止樹脂清漆之熔融黏度或以薄片形態之熔融黏度的上昇觀點來看，較佳為1mg/m2 以下，更佳為0.8mg/m2 以下，再更佳為0.5mg/m2 以下。 　　[0064] 每一無機填充材之單位表面積之碳量，可將表面處理後之無機填充材藉由溶劑(例如甲基乙基酮(MEK))進行洗淨處理後來測定。具體而言，作為溶劑係將充分量之MEK加在以表面處理劑進行表面處理之無機填充材，再以25℃超音波洗淨5分鐘。去除上清液，使固形分乾燥後，可使用碳分析計測定每一無機填充材之單位表面積之碳量。作為碳分析計，可使用堀場製作所公司製「EMIA-320V」等。 　　[0065] 樹脂組成物中之無機填充材的含量較佳為75質量%～95質量%。較佳為78質量%以上，更佳為80質量%以上，再更佳為83質量%以上。上限從絕緣層之機械強度，尤其是從延伸的觀點來看，較佳為90質量%以下。 　　[0066] ＜(d)苯氧基樹脂＞ 　　本發明之樹脂組成物作為(d)成分，係包含苯氧基樹脂。 　　[0067] 從得到機械強度良好之絕緣層的觀點來看，苯氧基樹脂之重量平均分子量較佳為10000以上，更佳為15000以上，再更佳為20000以上，又再更佳為25000以上或30000以上。從得到良好之相溶性的觀點來看，熱塑性樹脂之重量平均分子量的上限較佳為200000以下，更佳為180000以下，再更佳為160000以下，又再更佳為150000以下。熱塑性樹脂之重量平均分子量，例如可用凝膠滲透層析(GPC)法測定。詳細而言，熱塑性樹脂之重量平均分子量(聚苯乙烯換算)可使用(股)島津製作所製LC-9A/RID-6A作為測定裝置，使用昭和電工(股)製Shodex K-800P/K-804L/K-804L作為管柱，使用氯仿等作為移動相，在管柱溫度40℃測定，使用標準聚苯乙烯之檢量線算出。 　　[0068] 在(a)於分子內具有聚碳酸酯構造之彈性體、(b)環氧樹脂、(c)無機填充材及(e)碳二亞胺化合物的組合，從得到強度及密著性的觀點，尤其是得到優異之密著性的觀點來看，熱塑性樹脂較佳為具有選自由氧原子、氮原子及硫原子所構成之群組中之1種以上的原子或含有碳-碳雙鍵之官能基。作為該官能基，可列舉選自由羥基、羧基、酸酐基、環氧基、胺基、硫醇基、烯醇基、烯胺基、脲基、氰酸酯基、異氰酸酯基、硫異氰酸酯基、二醯亞胺基、烯基、丙二烯基及烯酮基所構成之群組中之1種以上。作為酸酐基，較佳羧酸酐基。作為烯基之適合的例，可列舉乙烯基、烯丙基、苯乙烯基。藉由使用具有該官能基之熱塑性樹脂，所得之絕緣層的玻璃轉移溫度有提高的傾向，可實現顯示良好耐熱性之絕緣層。熱塑性樹脂包含該官能基的情況下，熱塑性樹脂之官能基當量較佳為100000以下，更佳為90000以下、80000以下、70000以下、60000以下、50000以下、40000以下、30000以下、20000以下、10000以下、8000以下、6000以下或5000以下。該官能基當量的下限雖並未特別限定，但通常可成為50以上、100以上等。 　　[0069] 作為苯氧基樹脂，例如可列舉具有選自由雙酚A骨架、雙酚F骨架、雙酚S骨架、雙酚苯乙酮骨架、酚醛清漆骨架、聯苯骨架、茀骨架、雙環戊二烯骨架、降莰烯骨架、萘骨架、蔥骨架、金剛烷骨架、萜烯骨架及三甲基環己烷骨架所構成之群組中之1種以上骨架的苯氧基樹脂。苯氧基樹脂的末端可為酚性羥基、環氧基等之任一種官能基。作為苯氧基樹脂之具體例，可列舉三菱化學(股)製之「1256」及「4250」(皆為含有雙酚A骨架之苯氧基樹脂)、「YX8100」(含有雙酚S骨架之苯氧基樹脂)及「YX6954」(含有雙酚苯乙酮骨架之苯氧基樹脂)，其他，亦可列舉新日鐵住金化學(股)製之「FX280」及「FX293」、三菱化學(股)製之「YL7553」、「YL6794」、「YL7213」、「YL7290」及「YL7482」等。 　　[0070] ＜(e)碳二亞胺化合物＞ 　　本發明之樹脂組成物作為(e)成分，係包含碳二亞胺化合物。 　　[0071] 碳二亞胺化合物係於1分子中具有1個以上碳二亞胺基(-N=C=N-)之化合物，藉由與上述之(a)於分子內具有聚碳酸酯構造之彈性體、(b)環氧樹脂、(c)無機填充材及(d)苯氧基樹脂組合使用，可帶來強度及密著性優異之絕緣層。作為碳二亞胺化合物，較佳為於1分子中具有2個以上碳二亞胺基之化合物。碳二亞胺化合物可1種單獨使用，亦可組合2種以上使用。 　　[0072] 在一實施形態，本發明之樹脂組成物所包含之碳二亞胺化合物，含有下述式(2)表示之構造單位。 　　[0073](式(2)中，X係表示伸烷基、環伸烷基或伸芳基，此等可具有取代基；p係表示1～5之整數；X為複數存在的情況下，該等可為相同亦可為相異；*係表示鍵結部)。[0008] Hereinafter, the resin composition, resin sheet, circuit substrate and semiconductor chip package of the present invention will be described in detail. [Resin composition] The resin composition of the present invention may include (a) an elastomer having a polycarbonate structure in the molecule, (b) epoxy resin, (c) inorganic filler, (d) phenoxy base resin and (e) carbodiimide compound. If necessary, (f) hardener, (g) hardening accelerator and (h) flame retardant may be further included. Each component contained in the resin composition will be described in detail below. <(a) Elastomer having a polycarbonate structure in the molecule> The resin composition of the present invention contains (a) an elastomer having a polycarbonate structure in the molecule. By containing a soft resin such as component (a), an insulating layer with excellent insulation reliability, suppressed warping, and low linear thermal expansion coefficient can be obtained. In the present invention, the elastomer is preferably a resin having rubber elasticity, or a resin that is polymerized or solidified to exhibit rubber elasticity. As the rubber elasticity, for example, in accordance with Japanese Industrial Standards (JIS K7161), when a tensile test is performed at a temperature of 25° C. and a humidity of 40% RH, a resin showing an elastic modulus of 1 GPa or less is preferred. From the viewpoint of suppressing warpage, the elastomer of the component (a) is preferably at least one selected from the group consisting of resins with a glass transition temperature (Tg) of 25°C or less and resins that are liquid at 25°C. of resin. [0012] The glass transition temperature of the resin having a glass transition temperature (Tg) of 25°C or lower is preferably 20°C or lower, more preferably 15°C or lower. The lower limit of the glass transition temperature is not particularly limited, but it can usually be -15°C or higher. Moreover, as a resin which is liquid at 25 degreeC, resin which is liquid at 20 degreeC or less is preferable, and resin which is liquid at 15 degreeC or less is more preferable. As a suitable embodiment of the component (a), there is a structure represented by the formula (1-a) (urethane and polycarbonate structure), which may be referred to as "structure (1-a)" below. ) and a resin having a structure represented by formula (1-b) (imide structure may be referred to as "structure (1-b)" below). [0014] [In the formula, R1 represents the residue that removes the hydroxyl group of the polycarbonate diol, R2 represents the residue that removes the carboxyl group or acid anhydride group of the polybasic acid or its anhydride, and R3 represents the residue that removes the isocyanate group of the diisocyanate compound. residue]. However, the end of the above chemical formula is not a methyl group but represents the bonding position. Other chemical formulas are also the same. The number average molecular weight of the polycarbonate diol is preferably 500 to 5,000, more preferably from the viewpoint of the flexibility of the cured product of the resin composition and the solvent solubility of the component (A). It is 1,000~3,000. The hydroxyl equivalent of the polycarbonate diol is preferably 250 to 1,250, more preferably 500 to 1,000, from the viewpoint of flexibility of the cured resin composition and chemical resistance. As the diisocyanate compound, for example, aromatic diisocyanates such as toluene-2,4-diisocyanate, toluene-2,6-diisocyanate, xylylene diisocyanate, diphenylmethane diisocyanate, etc. can be cited; Aliphatic diisocyanates such as hexamethylene diisocyanate; alicyclic diisocyanates such as isophorone diisocyanate. Among these, aromatic diisocyanate is preferred, and toluene-2,4-diisocyanate is more preferred. Examples of the aforementioned polybasic acid or anhydride thereof include pyromellitic acid, benzophenonetetracarboxylic acid, biphenyltetracarboxylic acid, naphthalenetetracarboxylic acid, and 5-(2,5-dioxotetrahydrofuranyl) -Tetrabasic acids such as 3-methyl-cyclohexene-1,2-dicarboxylic acid, 3,3'-4,4'-diphenyltetracarboxylic acid and their anhydrides, trimellitic acid , tribasic acids such as cyclohexanetricarboxylic acid and their anhydrides, 1,3,3a,4,5,9b-hexahydro-5-(tetrahydro-2,5-dioxo-3-furan base)-naphtho(1,2-C)furan-1,3-dione, etc. Among these, tetrabasic acid anhydride is preferable, tetrabasic acid dianhydride is more preferable, and benzophenone tetracarboxylic dianhydride is still more preferable. R1 is preferably a divalent base represented by formula (1-c), [In the formula, k+1 R4 each independently represents an alkylene group having 1 to 20 carbon atoms which may have a substituent, and k represents an integer of 5 to 30]. The alkylene group of R4 can be linear or branched. Examples of the substituent that the alkylene group of R4 may have include a halogen atom, a cycloalkyl group having 4 to 8 carbon atoms, and an aryl group having 6 to 14 carbon atoms. The alkylene group of R4 is preferably unsubstituted. [0022] Examples of the halogen atom include a fluorine atom, a chlorine atom, a bromine atom, and an iodine atom. Examples of the cycloalkyl group having 4 to 8 carbon atoms include cyclopentyl, cyclohexyl, and cycloheptyl. Examples of the aryl group having 6 to 14 carbon atoms include phenyl, 1-naphthyl, 2-naphthyl, 1-oncyl, 2-oncyl, and 9-oncyl. The k+1 R4 are each independently, preferably an alkylene group with 1 to 20 carbon atoms, more preferably an alkylene group with 2 to 18 carbon atoms, and still more preferably an alkylene group with 3 to 16 carbon atoms. alkyl. k is preferably an integer from 5 to 25, more preferably an integer from 5 to 20. R2 is preferably at least one selected from the group of tetravalent groups represented by any one of the following formulas, [0025] [In the formula, A represents an oxygen atom, a sulfur atom, CO, SO, SO 2 , CH 2 , CH(CH 3 ), C(CH 3 ) 2 , C(CF 3 ) 2 , or C(CCl 3 ) 2 . In the formula, the hydrogen atom bonded to the carbon atom can be substituted with a substituent selected from a halogen atom and an alkyl group having 1 to 8 carbon atoms]. Among the R2 (tetravalent radicals) represented by the above formula, it is preferably a tetravalent radical having an aromatic ring, more preferably a tetravalent radical having two or more aromatic rings, and most preferably a tetravalent radical represented by the following formula base, [0028] [In the formula, A represents oxygen atom, sulfur atom, CO, SO, SO 2 , CH 2 , CH(CH 3 ), C(CH 3 ) 2 , C(CF 3 ) 2 , or C(CCl 3 ) 2 . In the formula, the hydrogen atom bonded to the carbon atom can be substituted with a substituent selected from a halogen atom and an alkyl group having 1 to 8 carbon atoms]. A is preferably CO. The hydrogen atom bonded to the carbon atom in the above formula (that is, the hydrogen atom bonded to the carbon atom in the tetravalent group of R) can be selected from the group consisting of halogen atoms and alkyl groups with 1 to 8 carbon atoms. substituted by substituents. The hydrogen atom is preferably unsubstituted. [0032] Examples of the halogen atom include those mentioned above. The alkyl group may be linear or branched. Examples of the alkyl group having 1 to 8 carbon atoms include methyl, ethyl, propyl, isopropyl, butyl, isobutyl, sec-butyl, tert-butyl, pentyl, isopentyl, Neopentyl, 1-ethylpropyl, hexyl, isohexyl, 1,1-dimethylbutyl, 2,2-dimethylbutyl, 3,3-dimethylbutyl, 2-ethyl Butyl, heptyl, octyl. R3 is preferably at least one selected from the group of divalent groups represented by any one of the following formulas, [0034] [In the formula, the hydrogen atom bonded to the carbon atom can be substituted with a substituent selected from a halogen atom and an alkyl group having 1 to 8 carbon atoms]. However, the end of the above formula is not a methyl group but represents the bonding position. For example, the last part of the above formula is not octane, but represents hexamethylene. The hydrogen atom bonded to the carbon atom in the above formula (that is, the hydrogen atom bonded to the carbon atom in the divalent group of R) can be selected from the group consisting of halogen atoms and alkyl groups with 1 to 8 carbon atoms. Substituted with a substituent (preferably an alkyl group having 1 to 8 carbon atoms, more preferably an alkyl group having 1 to 6 carbon atoms, and most preferably a methyl group). Examples of the halogen atom and the alkyl group having 1 to 8 carbon atoms include the above. Examples of the alkyl group having 1 to 6 carbon atoms include methyl, ethyl, propyl, isopropyl, butyl, isobutyl, sec-butyl, tert-butyl, pentyl, isopentyl, Neopentyl, 1-ethylpropyl, hexyl, isohexyl, 1,1-dimethylbutyl, 2,2-dimethylbutyl, 3,3-dimethylbutyl, 2-ethyl butyl. Among R3 (divalent group) represented by the above formula, a divalent group having an aromatic ring or an alicyclic ring is preferred, and a divalent organic group having an alicyclic ring is more preferred. In the case of a divalent group having an aromatic ring, it is preferably a divalent group represented by any of the following formulas, [0039] [In the formula, the hydrogen atom bonded to the carbon atom can be replaced with an alkyl group having 1 to 8 carbon atoms (preferably an alkyl group with 1 to 6 carbon atoms, more preferably a methyl group)]. Particularly preferred is 4-methyl-1,3-phenylene (that is, the residue obtained by removing the isocyanate group of toluene-2,4-diisocyanate). [0041] As component (a), it is preferred to have a functional group capable of reacting with component (b) described below. In a suitable embodiment, the functional group that can react with component (b) is selected from hydroxyl (more preferably phenolic hydroxyl), carboxyl, anhydride group, amine group, epoxy group, isocyanate group and One or more functional groups in the group consisting of urethane groups. Among these, the functional group is preferably a hydroxyl group, an acid anhydride group, an epoxy group, or an isocyanate group, and more preferably a hydroxyl group, an acid anhydride group, or an epoxy group. [0043] The number average molecular weight (Mn) is preferably 1,000 to 100,000, more preferably 5,000 to 50,000, more preferably 7,500 to 30,000, still more preferably 10,000 to 15,000. Here, the number average molecular weight (Mn) of the resin is the number average molecular weight in terms of polystyrene measured using GPC (gel permeation chromatography). [0044] The functional group equivalent when having a functional group is preferably 100 to 10,000, more preferably 200 to 5,000. However, the so-called functional group equivalent refers to the number of grams of resin containing 1 gram equivalent of functional group. For example, the epoxy group equivalent can be measured in accordance with JIS K7236. The hydroxyl equivalent weight can be calculated by dividing the hydroxyl value measured in accordance with JIS K1557-1 by the molecular weight of KOH. As a suitable embodiment of the component (a), a polycarbonate resin having a glass transition temperature of 25° C. or less is preferably selected from a polycarbonate resin containing hydroxyl groups (more preferably a polycarbonate resin containing phenolic Polycarbonate resin containing hydroxyl group), polycarbonate resin containing carboxyl group, polycarbonate resin containing anhydride group, polycarbonate resin containing epoxy group, polycarbonate resin containing isocyanate group and polycarbonate resin containing urethane group One or more resins in the group consisting of polycarbonate resins. Here, "polycarbonate resin" refers to a resin containing a polycarbonate structure. In these resins, the polycarbonate structure may be included in the main chain or in the side chain. From the viewpoint of imparting flexibility, the content of component (a) in the resin composition is preferably 85% when the non-volatile content of the resin composition excluding component (c) is 100% by mass. Mass% or less, more preferably 80 mass% or less, still more preferably 75 mass% or less, still more preferably 73 mass% or less. Moreover, the lower limit is preferably 30 mass% or more, more preferably 35 mass% or more, still more preferably 45 mass% or more, and still more preferably 55 mass% or more. <(b) Epoxy resin> The resin composition contains an epoxy resin. Examples of the epoxy resin include bisphenol A-type epoxy resin, bisphenol F-type epoxy resin, bisphenol S-type epoxy resin, bisphenol AF-type epoxy resin, dicyclopentadiene-type epoxy resin, and bisphenol S-type epoxy resin. Phenolic epoxy resin, naphthol novolak type epoxy resin, phenol novolak type epoxy resin, alicyclic epoxy resin with ester skeleton, tert-butyl-catechol type epoxy resin, naphthalene type epoxy resin Oxygen resin, naphthol type epoxy resin, onion type epoxy resin, glycidyl amine type epoxy resin, glycidyl ester type epoxy resin, cresol novolak type epoxy resin, biphenyl type epoxy resin, linear Aliphatic epoxy resin, epoxy resin with butadiene structure, alicyclic epoxy resin, heterocyclic epoxy resin, epoxy resin containing spiro ring, cyclohexane dimethanol type epoxy resin, naphthalene Ether type epoxy resin, trimethylol type epoxy resin, tetraphenylethane type epoxy resin, etc. One type of epoxy resin can be used alone, or two or more types can be used in combination. [0048] The epoxy resin is preferably an epoxy resin containing two or more epoxy groups per molecule. When the non-volatile content of the epoxy resin is defined as 100% by mass, it is preferable that at least 50% by mass or more is an epoxy resin having two or more epoxy groups per molecule. Among them, preferred ones include an epoxy resin that has two or more epoxy groups in one molecule and is liquid at a temperature of 20° C. (hereinafter referred to as "liquid epoxy resin"), and one that has three or more epoxy groups in one molecule. An epoxy resin that has more than epoxy groups and is solid at a temperature of 20°C (hereinafter referred to as "solid epoxy resin"). As the epoxy resin, a resin composition having excellent flexibility is obtained by using a liquid epoxy resin and a solid epoxy resin in combination. In addition, the fracture strength of the cured product of the resin composition is also improved. As the liquid epoxy resin, preferably bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol AF type epoxy resin, naphthalene type epoxy resin, and glycidol with aromatic structure Ester type epoxy resin, glycidyl amine type epoxy resin with aromatic structure, phenolic novolak type epoxy resin, alicyclic epoxy resin with aromatic structure and ester skeleton, ring with aromatic structure Hexane dimethanol type epoxy resin and epoxy resin with aromatic structure butadiene structure, preferably bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol AF type epoxy resin and Naphthalene type epoxy resin, more preferably bisphenol A type epoxy resin, bisphenol F type epoxy resin. Specific examples of liquid epoxy resins include "HP4032", "HP4032D", and "HP4032SS" (naphthalene type epoxy resin) manufactured by DIC Corporation, and "828US" and "jER828EL" (bisphenol resin) manufactured by Mitsubishi Chemical Corporation. A type epoxy resin), "JER806", "jER807" (bisphenol F type epoxy resin), "jER152" (phenolic novolak type epoxy resin), "630", "630LSD" (aminophenol type epoxy resin) Oxygen resin), "ZX1059" made by Nippon Steel & Sumitomo Metal Chemical Co., Ltd. (a mixture of bisphenol A-type epoxy resin and bisphenol F-type epoxy resin), "EX-721" (glycidyl ester) made by Nagase ChemteX Co., Ltd. type epoxy resin), "Celoxide2021P" made by Daicel Co., Ltd. (alicyclic epoxy resin with an ester skeleton), "ZX1658" and "ZX1658GS" made by Nippon Steel Chemical Co., Ltd. (liquid 1,4-glycidyl ring hexane). These may be used individually by 1 type, and may be used in combination of 2 or more types. The content of the liquid epoxy resin in the resin composition is preferably 1 from the perspective of improving the compatibility of the component (a) when the non-volatile component in the resin composition is 100% by mass. % by mass or more, more preferably 2 mass % or more, still more preferably 2.5 mass % or more. The upper limit of the epoxy resin content is not particularly limited as long as the effect of the present invention can be exerted. However, it is preferably 15 mass% or less, more preferably 10 mass% or less, and still more preferably 5 mass% or less. [0051] The epoxy equivalent of the liquid epoxy resin is preferably 50 to 5000, more preferably 50 to 3000, still more preferably 80 to 2000, and still more preferably 110 to 1000. By reaching this range, the cross-linking density of the cured product of the resin composition becomes sufficient, and when the cured product is used as an insulating layer, an insulating layer with smaller surface roughness can be provided. However, the epoxy equivalent of liquid epoxy resin can be measured according to JIS K7236 and is the mass of the resin containing 1 equivalent of epoxy groups. [0052] The weight average molecular weight of the liquid epoxy resin is preferably 100 to 5000, more preferably 250 to 3000, and even more preferably 400 to 1500. Here, the weight average molecular weight of the liquid epoxy resin is the weight average molecular weight in terms of polystyrene measured by the gel permeation chromatography (GPC) method. As solid epoxy resin, preferred are naphthalene-type 4-functional epoxy resin, cresol novolak-type epoxy resin, dicyclopentadiene-type epoxy resin with aromatic structure, and phenol-type epoxy resin. , naphthol type epoxy resin, biphenyl type epoxy resin, naphthyl ether type epoxy resin, onion type epoxy resin, bisphenol A type epoxy resin, bisphenol AF type epoxy resin, tetraphenylethane type epoxy resin, more preferably naphthalene-type 4-functional epoxy resin, naphthol-type epoxy resin and biphenyl-type epoxy resin, naphthyl ether-type epoxy resin, more preferably naphthalene-type 4-functional epoxy resin, Naphthyl ether type epoxy resin. Specific examples of solid epoxy resins include "HP4032H" (naphthalene type epoxy resin), "HP-4700", "HP-4710" (naphthalene type tetrafunctional epoxy resin), and "N -690" (cresol novolak type epoxy resin), "N-695" (cresol novolak type epoxy resin), "HP-7200", "HP-7200L", "HP-7200HH", "HP -7200H", "HP-7200HHH" (dicyclopentadiene type epoxy resin), "EXA7311", "EXA7311-G3", "EXA7311-G4", "EXA7311-G4S", "HP6000" (dicyclopentadiene type epoxy resin) Epoxy resin), "EPPN-502H" (ginseng phenol type epoxy resin), "NC7000L" (naphthol novolak type epoxy resin), "NC3000H", "NC3000", "NC3000L" manufactured by Nippon Kayaku Co., Ltd. , "NC3100" (biphenyl type epoxy resin), "ESN475V" (naphthol type epoxy resin) manufactured by Nippon Steel & Sumitomo Metal Chemical Co., Ltd., "ESN485" (naphthol novolac type epoxy resin), Mitsubishi Chemical Corporation Made of "YX4000H", "YL6121" (biphenyl type epoxy resin), "YX4000HK" (xylenol type epoxy resin), "YL7760" (bisphenol AF type epoxy resin), "YX8800" (onion type Epoxy resin), "PG-100" and "CG-500" made by Osaka Gas Chemicals Co., Ltd., "YL7800" made by Mitsubishi Chemical Co., Ltd. (N-type epoxy resin), "jER1010" made by Mitsubishi Chemical Co., Ltd. (solid Bisphenol A type epoxy resin), "jER1031S" (tetraphenylethane type epoxy resin), "157S70" (bisphenol novolak type epoxy resin), Mitsubishi Chemical Corporation's "YX4000HK" (xylenol type epoxy resin), "YX8800" (onion type epoxy resin), "PG-100" and "CG-500" made by Osaka Gas Chemicals Co., Ltd., "YL7800" (green type epoxy resin) made by Mitsubishi Chemical Corporation , "jER1031S" (tetraphenylethane type epoxy resin) manufactured by Mitsubishi Chemical Corporation, etc. These may be used individually by 1 type, and may be used in combination of 2 or more types. [0054] The content of the solid epoxy resin in the resin composition is preferably 0.1 mass% or more from the perspective of adjusting the viscosity of the resin composition when the non-volatile components in the resin composition are set to 100% by mass. , more preferably 0.2 mass% or more, still more preferably 0.3 mass% or more. The upper limit of the epoxy resin content is not particularly limited as long as the effect of the present invention can be exerted. However, it is preferably 10 mass% or less, more preferably 5 mass% or less, and still more preferably 1 mass% or less. [0055] The epoxy equivalent of the solid epoxy resin is preferably 50 to 5000, more preferably 50 to 3000, still more preferably 80 to 2000, and still more preferably 110 to 1000. By entering this range, the cross-linking density of the hardened material becomes sufficient, and an insulating layer with smaller surface roughness can be produced. Furthermore, the epoxy equivalent of solid epoxy resin can be measured according to JIS K7236 and is the mass of the resin containing 1 equivalent of epoxy groups. [0056] The weight average molecular weight of the solid epoxy resin is preferably 100 to 5000, more preferably 250 to 3000, and still more preferably 400 to 1500. Here, the weight average molecular weight of the solid epoxy resin is the weight average molecular weight in terms of polystyrene measured by the gel permeation chromatography (GPC) method. When the content of the liquid epoxy resin is set as B1 (mass %) and the content of the solid epoxy resin is set as B2 (mass %), from the perspective of adjusting the melt viscosity, it is preferable to satisfy B1> B2 relationship. Moreover, the difference (B1-B2) between B1 and B2 is preferably 0.1 mass% or more, more preferably 0.2 mass% or more, still more preferably 0.3 mass% or more, 0.5 mass% or more, or 1 mass% or more. Although the upper limit of the difference (B1-B2) is not particularly limited, it can usually be 10 mass% or less, 5 mass% or less, etc. [0058] The mass ratio of the liquid epoxy resin to the solid epoxy resin (solid epoxy resin/liquid epoxy resin) is preferably in the range of 0.01 to 1. By setting the ratio of liquid epoxy resin to solid epoxy resin within this range, i) moderate adhesion can be obtained when used in the form of a resin sheet, ii) sufficient adhesion can be obtained when used in the form of a resin sheet. The flexibility improves operability and iii) can obtain a hardened material with sufficient breaking strength. From the viewpoint of the effects of i) to iii) above, the mass ratio of the liquid epoxy resin to the solid epoxy resin (solid epoxy resin/liquid epoxy resin) is more preferably 0.05 to The range is 0.8, and more preferably the range is 0.1~0.5. [0059] <(c) Inorganic filler> The resin composition contains (c) an inorganic filler. The material of the inorganic filler is not particularly limited, but examples include silica, alumina, glass, cordierite, silicon oxide, barium sulfate, barium carbonate, talc, clay, mica powder, zinc oxide, hydrotalcite, Boehmite, aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, magnesium oxide, boron nitride, aluminum nitride, manganese nitride, aluminum borate, strontium carbonate, strontium titanate, calcium titanate, magnesium titanate , bismuth titanate, titanium oxide, zirconium oxide, barium titanate, barium zirconate titanate, barium zirconate, calcium zirconate, zirconium phosphate and zirconium tungstate phosphate, etc. Among these, silicon dioxide or alumina is suitable, and silicon dioxide is particularly suitable. Moreover, as silica, spherical silica is preferable. One type of inorganic filler can be used alone, or two or more types can be used in combination. The average particle size of the inorganic filler is preferably 5 μm or less, more preferably 2.5 μm or less, and still more preferably 2.2 μm or less, from the perspective of improving circuit embedding properties and obtaining an insulating layer with low surface roughness. , preferably 2 μm or less. Although the lower limit of the average particle diameter is not particularly limited, it is preferably 0.01 μm or more, more preferably 0.05 μm or more, and still more preferably 0.1 μm or more. Examples of commercially available inorganic fillers having such an average particle diameter include "YC100C", "YA050C", "YA050C-MJE", and "YA010C" manufactured by Admatechs, and "UFP-30" manufactured by Denki Chemical Industry Co., Ltd. , "Sifil NSS-3N", "Sifil NSS-4N", "Sifil NSS-5N" made by Tokuyama Co., Ltd., "SC2500SQ" made by Admatechs Co., Ltd., "SO-C6", "SO-C4", "SO-C2" , "SO-C1", etc. [0061] The average particle size of the inorganic filler can be measured by laser diffraction and scattering according to the Mie scattering theory. Specifically, the particle size distribution of the inorganic filler is prepared on a volume basis using a laser diffraction scattering particle size distribution measuring device, and its median diameter can be measured as the average particle diameter. For the measurement sample, it is preferable to use one in which the inorganic filler is dispersed in water by ultrasonic waves. As a laser diffraction scattering particle size distribution measuring device, "LA-500" manufactured by Horiba Manufacturing Co., Ltd., etc. can be used. From the viewpoint of improving moisture resistance and dispersibility, the inorganic filler is preferably an aminosilane coupling agent, an epoxysilane coupling agent, a mercaptosilane coupling agent, a silane coupling agent, or an alkoxy coupling agent. Treat with one or more surface treatment agents such as silane compounds, organosilazane compounds, and titanate coupling agents. Examples of commercially available surface treatment agents include "KBM403" (3-glycidoxypropyltrimethoxysilane) manufactured by Shin-Etsu Chemical Industries, Ltd. and "KBM803" (3-mercaptopropyltrimethoxysilane) manufactured by Shin-Etsu Chemical Industries, Ltd. Oxysilane), "KBE903" (3-aminopropyltriethoxysilane) manufactured by Shin-Etsu Chemical Industries, Ltd., "KBM573" (N-phenyl-3-aminopropyltrimethoxysilane) manufactured by Shin-Etsu Chemical Industries, Ltd. Silane), "SZ-31" (hexamethyldisilazane) manufactured by Shin-Etsu Chemical Industries, Ltd., "KBM103" (phenyltrimethoxysilane) manufactured by Shin-Etsu Chemical Industries, Ltd., "KBM-4803" manufactured by Shin-Etsu Chemical Industries, Ltd. (Long chain epoxy silane coupling agent) etc. [0063] The degree of surface treatment by the surface treatment agent can be evaluated by the amount of carbon per unit surface area of the inorganic filler material. From the viewpoint of improving the dispersibility of the inorganic filler, the amount of carbon per unit surface area of the inorganic filler is preferably 0.02 mg/m 2 or more, more preferably 0.1 mg/m 2 or more, and still more preferably 0.2 mg/m 2 or more. In addition, from the viewpoint of preventing an increase in the melt viscosity of the resin varnish or the melt viscosity in the form of flakes, it is preferably 1 mg/m 2 or less, more preferably 0.8 mg/m 2 or less, and still more preferably 0.5 mg/m 2 the following. [0064] The amount of carbon per unit surface area of each inorganic filler material can be measured after the surface-treated inorganic filler material is washed with a solvent (such as methyl ethyl ketone (MEK)). Specifically, as a solvent, a sufficient amount of MEK is added to the inorganic filler surface-treated with a surface treatment agent, and then ultrasonic cleaning is performed at 25° C. for 5 minutes. After removing the supernatant and drying the solid content, a carbon analyzer can be used to measure the amount of carbon per unit surface area of each inorganic filler material. As a carbon analyzer, "EMIA-320V" manufactured by Horiba Manufacturing Co., Ltd., etc. can be used. [0065] The content of the inorganic filler in the resin composition is preferably 75% by mass to 95% by mass. The content is preferably 78 mass% or more, more preferably 80 mass% or more, and still more preferably 83 mass% or more. The upper limit is preferably 90 mass % or less from the viewpoint of the mechanical strength of the insulating layer, especially from the perspective of elongation. <(d) Phenoxy resin> The resin composition of the present invention contains a phenoxy resin as the (d) component. From the viewpoint of obtaining an insulating layer with good mechanical strength, the weight average molecular weight of the phenoxy resin is preferably 10,000 or more, more preferably 15,000 or more, still more preferably 20,000 or more, and still more preferably 25,000 or more Or more than 30,000. From the viewpoint of obtaining good compatibility, the upper limit of the weight average molecular weight of the thermoplastic resin is preferably 200,000 or less, more preferably 180,000 or less, still more preferably 160,000 or less, still more preferably 150,000 or less. The weight average molecular weight of the thermoplastic resin can be measured, for example, by gel permeation chromatography (GPC). Specifically, the weight average molecular weight (polystyrene conversion) of the thermoplastic resin can be measured using LC-9A/RID-6A manufactured by Shimadzu Corporation, and Shodex K-800P/K-804L manufactured by Showa Denko Corporation. /K-804L is used as the column, chloroform etc. is used as the mobile phase, the column temperature is measured at 40°C, and the calibration curve of the standard polystyrene is used to calculate. [0068] The combination of (a) an elastomer having a polycarbonate structure in the molecule, (b) an epoxy resin, (c) an inorganic filler, and (e) a carbodiimide compound provides strength and adhesion. From the viewpoint of properties, especially from the viewpoint of obtaining excellent adhesion, the thermoplastic resin preferably has one or more atoms selected from the group consisting of oxygen atoms, nitrogen atoms and sulfur atoms or contains carbon-carbon. Functional group of double bond. Examples of the functional group include a hydroxyl group, a carboxyl group, an acid anhydride group, an epoxy group, an amine group, a thiol group, an enol group, an enamine group, a urea group, a cyanate group, an isocyanate group, and a thiisocyanate group. One or more types from the group consisting of diimide group, alkenyl group, allenyl group and ketene group. As the acid anhydride group, a carboxylic acid anhydride group is preferred. Suitable examples of the alkenyl group include vinyl group, allyl group, and styrene group. By using a thermoplastic resin having this functional group, the glass transition temperature of the resulting insulating layer tends to increase, and an insulating layer showing good heat resistance can be realized. When the thermoplastic resin contains this functional group, the functional group equivalent of the thermoplastic resin is preferably 100,000 or less, more preferably 90,000 or less, 80,000 or less, 70,000 or less, 60,000 or less, 50,000 or less, 40,000 or less, 30,000 or less, 20,000 or less, 10,000 Below, below 8000, below 6000 or below 5000. The lower limit of the functional group equivalent is not particularly limited, but usually it can be 50 or more, 100 or more, etc. Examples of phenoxy resins include those having a structure selected from a bisphenol A skeleton, a bisphenol F skeleton, a bisphenol S skeleton, a bisphenol acetophenone skeleton, a novolak skeleton, a biphenyl skeleton, a fluorine skeleton, and a dicyclopentane skeleton. Phenoxy resin with one or more skeletons in the group consisting of diene skeleton, norbornene skeleton, naphthalene skeleton, allium skeleton, adamantane skeleton, terpene skeleton and trimethylcyclohexane skeleton. The terminal of the phenoxy resin may be any functional group such as a phenolic hydroxyl group or an epoxy group. Specific examples of phenoxy resins include "1256" and "4250" manufactured by Mitsubishi Chemical Co., Ltd. (both phenoxy resins containing a bisphenol A skeleton), and "YX8100" (a phenoxy resin containing a bisphenol S skeleton). Phenoxy resin) and "YX6954" (phenoxy resin containing a bisphenol acetophenone skeleton). Others include "FX280" and "FX293" manufactured by Nippon Steel & Sumitomo Metal Chemical Co., Ltd., Mitsubishi Chemical ( "YL7553", "YL6794", "YL7213", "YL7290" and "YL7482", etc. <(e) Carbodiimide compound> The resin composition of the present invention contains a carbodiimide compound as the (e) component. The carbodiimide compound is a compound having one or more carbodiimide groups (-N=C=N-) in one molecule, and has a polycarbonate structure in the molecule by combining with the above (a) The combination of elastomer, (b) epoxy resin, (c) inorganic filler and (d) phenoxy resin can provide an insulating layer with excellent strength and adhesion. As the carbodiimide compound, a compound having two or more carbodiimide groups per molecule is preferred. A carbodiimide compound may be used individually by 1 type, and may be used in combination of 2 or more types. In one embodiment, the carbodiimide compound contained in the resin composition of the present invention contains a structural unit represented by the following formula (2). [0073] (In formula (2), X represents an alkylene group, cycloalkylene group or aryl group, which may have a substituent; p represents an integer from 1 to 5; when They can be the same or different; * represents the bonding part).

X表示之伸烷基的碳原子數較佳為1~20，更佳為1~10，再更佳為1~6、1~4、或1~3。於該碳原子數未包含取代基之碳原子數。作為該伸烷基之適合的例，可列舉亞甲基、伸乙基、伸丙基、伸丁基。 The number of carbon atoms of the alkylene group represented by The number of carbon atoms does not include the number of carbon atoms of the substituent. Suitable examples of the alkylene group include methylene, ethylene, propylene, and butylene.

X表示之環伸烷基的碳原子數較佳為3~20，更佳為3~12，再更佳為3~6。於該碳原子數未包含取代基之碳原子數。作為該環伸烷基之適合的例，可列舉環伸丙基、環伸丁基、環伸戊基、環伸己基。 The number of carbon atoms of the cycloalkylene group represented by X is preferably 3 to 20, more preferably 3 to 12, and still more preferably 3 to 6. The number of carbon atoms does not include the number of carbon atoms of the substituent. Suitable examples of the cycloalkylene group include cyclopropyl group, cyclobutyl group, cyclopentyl group and cyclohexyl group.

X表示之伸芳基係從芳香族烴去除2個芳香環上之氫原子之基。該伸芳基之碳原子數較佳為6~24，更佳為6~18，再更佳為6~14，又再更佳為6~10。於該碳原子數未包含取代基之碳原子數。作為該伸芳基之適合的例，可列舉伸苯基、伸萘基、伸蒽基。 The aryl group represented by X is a group obtained by removing two hydrogen atoms on the aromatic ring from an aromatic hydrocarbon. The number of carbon atoms of the aryl group is preferably 6 to 24, more preferably 6 to 18, still more preferably 6 to 14, still more preferably 6 to 10. The number of carbon atoms does not include the number of carbon atoms of the substituent. Suitable examples of the aryl group include phenylene group, naphthylene group, and anthracenyl group.

在與(a)於分子內具有聚碳酸酯構造之彈性體、(b)環氧樹脂、(c)無機填充材及(d)苯氧基樹脂之組合，從實現強度及密著性更為優異之絕緣層的觀點來看，較佳為X為伸烷基或環伸烷基，此等可具有取代基。 In combination with (a) an elastomer having a polycarbonate structure in the molecule, (b) epoxy resin, (c) inorganic filler, and (d) phenoxy resin, it is possible to achieve greater strength and adhesion. From the viewpoint of an excellent insulating layer, it is preferable that X is an alkylene group or a cycloalkylene group, which may have a substituent.

X表示之伸烷基、環伸烷基或伸芳基可具有取代基。作為該取代基，雖並未特別限定，但例如可列舉鹵素原子、烷基、烷氧基、環烷基、環烷氧基、芳基、芳氧基、醯基及醯氧基。作為取代基所使用之鹵素原子，例如可列舉氟原子、氯原子、溴原子、碘原子。作為取代基使用之烷基、烷氧基可為直鏈狀、分支狀之任一種，其碳原子數較佳為1~20，更佳為1~10，再更佳為1~6、1~4、 或1~3。作為取代基使用之環烷基、環烷氧基的碳原子數，較佳為3~20，更佳為3~12，再更佳為3~6。作為取代基使用之芳基，係從芳香族烴去除1個芳香環上之氫原子之基，其碳原子數較佳為6~24，更佳為6~18，再更佳為6~14，又再更佳為6~10。作為取代基使用之芳氧基之碳原子數較佳為6~24，更佳為6~18，再更佳為6~14，又再更佳為6~10。作為取代基使用之醯基係指式：-C(=O)-R1表示之基(式中，R1係表示烷基或芳基)。R1表示之烷基可為直鏈狀、分支狀之任一種，其碳原子數較佳為1~20，更佳為1~10，再更佳為1~6、1~4、或1~3。R1表示之芳基之碳原子數較佳為6~24，更佳為6~18，再更佳為6~14，又再更佳為6~10。作為取代基使用之醯氧基係指式：-O-C(=O)-R1表示之基(式中，R1係表示與上述相同意義)。其中，作為取代基，較佳為烷基、烷氧基及醯氧基，更佳為烷基。 The alkylene group, cycloalkylene group or aryl group represented by X may have a substituent. Although the substituent is not particularly limited, examples thereof include a halogen atom, an alkyl group, an alkoxy group, a cycloalkyl group, a cycloalkoxy group, an aryl group, an aryloxy group, a hydroxyl group, and a hydroxyl group. Examples of the halogen atom used as the substituent include a fluorine atom, a chlorine atom, a bromine atom, and an iodine atom. The alkyl group and alkoxy group used as the substituent can be either linear or branched. The number of carbon atoms is preferably 1 to 20, more preferably 1 to 10, and even more preferably 1 to 6, 1 ~4. Or 1~3. The number of carbon atoms of the cycloalkyl group and cycloalkoxy group used as the substituent is preferably 3 to 20, more preferably 3 to 12, and still more preferably 3 to 6. The aryl group used as a substituent is a group obtained by removing one hydrogen atom on an aromatic ring from an aromatic hydrocarbon. The number of carbon atoms is preferably 6 to 24, more preferably 6 to 18, and still more preferably 6 to 14. , and even better is 6~10. The number of carbon atoms of the aryloxy group used as a substituent is preferably 6 to 24, more preferably 6 to 18, still more preferably 6 to 14, still more preferably 6 to 10. The acyl group used as a substituent refers to a group represented by the formula: -C(=O)-R1 (in the formula, R1 represents an alkyl group or an aryl group). The alkyl group represented by R1 can be either linear or branched, and its carbon number is preferably 1 to 20, more preferably 1 to 10, and even more preferably 1 to 6, 1 to 4, or 1~ 3. The number of carbon atoms of the aryl group represented by R1 is preferably 6 to 24, more preferably 6 to 18, still more preferably 6 to 14, still more preferably 6 to 10. The acyloxy group used as a substituent refers to a group represented by the formula: -O-C(=O)-R1 (in the formula, R1 represents the same meaning as above). Among them, as the substituent, an alkyl group, an alkoxy group and a hydroxyl group are preferred, and an alkyl group is more preferred.

式(2)中，p係表示1~5之整數。在與(a)於分子內具有聚碳酸酯構造之彈性體、(b)環氧樹脂、(c)無機填充材及(d)苯氧基樹脂的組合，從在強度及密著性實現更為優異之絕緣層的觀點來看，p較佳為1~4，更佳為2~4，再更佳為2或3。 In formula (2), p represents an integer from 1 to 5. In combination with (a) an elastomer having a polycarbonate structure in the molecule, (b) epoxy resin, (c) inorganic filler, and (d) phenoxy resin, improved strength and adhesion are achieved. From the viewpoint of forming an excellent insulating layer, p is preferably 1 to 4, more preferably 2 to 4, and still more preferably 2 or 3.

式(2)中，X為複數存在的情況下，該等可為相同亦可為相異。在適合之一實施形態，至少一個之X為伸烷基或環伸烷基，此等可具有取代基。 In formula (2), when X is a plural number, they may be the same or different. In a suitable embodiment, at least one X is an alkylene group or a cycloalkylene group, which may have a substituent.

在適合之一實施形態，碳二亞胺化合物將碳二亞胺化合物之分子全體的質量定為100質量%時，較佳為在50質量%以上，更佳為60質量%以上，再更佳為70質量%以上，又再更佳為在80質量%以上或90質量%以上，含有式(2)表示之構造單位。碳二亞胺化合物係去除末端構造，可實質上成為來自式(2)表示之構造單位。作為碳二亞胺化合物之末端構造，雖並未特別限定，但例如可列舉烷基、環烷基及芳基，此等可具有取代基。作為末端構造使用之烷基、環烷基、芳基，可為與對於X表示之基可具有之取代基所說明之烷基、環烷基、芳基相同。又，作為末端構造使用之基可具有之取代基，可為與X表示之基可具有之取代基相同。 　　[0082] 從可抑制硬化樹脂組成物時之排氣(Outgas)的發生的觀點來看，碳二亞胺化合物之重量平均分子量較佳為500以上，更佳為600以上，再更佳為700以上，又再更佳為800以上，特佳為900以上或1000以上。又，從得到良好之相溶性的觀點來看，碳二亞胺化合物之重量平均分子量的上限較佳為5000以下，更佳為4500以下，再更佳為4000以下，又再更佳為3500以下，特佳為3000以下。碳二亞胺化合物之重量平均分子量，例如可用凝膠滲透層析(GPC)法(聚苯乙烯換算)測定。 　　[0083] 尚，碳二亞胺化合物係源自其製法，有於分子中含有異氰酸酯基(-N=C=O)的情況。從得到顯示良好之保存安定性之樹脂組成物的觀點，從而從實現顯示所期望特性之絕緣層的觀點來看，碳二亞胺化合物中之異氰酸酯基的含量(亦稱為「NCO含量」)，較佳為5質量%以下，更佳為4質量%以下，再更佳為3質量%以下，又再更佳為2質量%以下，特佳為1質量%以下或0.5質量%以下。 　　[0084] 碳二亞胺化合物可使用市售品。作為市售之碳二亞胺化合物，例如可列舉日清紡Chemical(股)製之Carbodilite(註冊商標)V-02B、V-03、V-04K、V-07及V-09、萊茵化學公司製之Stavaxol(註冊商標)P、P400及Hykagil 510。 　　[0085] 在與(a)於分子內具有聚碳酸酯構造之彈性體、(b)環氧樹脂、(c)無機填充材及(d)苯氧基樹脂的組合，從得到強度及密著性之任一種特性皆優異之絕緣層的觀點來看，樹脂組成物中之碳二亞胺化合物的含量較佳為1質量%以上，更佳為2質量%以上，再更佳為3質量%以上、4質量%以上或5質量%以上。碳二亞胺化合物的含量的上限雖並未特別限定，但較佳為30質量%以下，更佳為20質量%以下，再更佳為15質量%以下。 　　[0086] ＜(f)硬化劑＞ 　　樹脂組成物可包含(f)硬化劑。作為硬化劑，只要是具有硬化(b)成分等之樹脂的機能，則並未特別限定，例如可列舉酚系硬化劑(亦包含萘酚系硬化劑)、活性酯系硬化劑、苯并噁嗪系硬化劑及氰酸酯酯系硬化劑等。硬化劑可1種單獨使用用、或併用2種以上。(d)成分較佳為選自酚系硬化劑、活性酯系硬化劑及氰酸酯酯系硬化劑中之1種以上，更佳為選自酚系硬化劑及活性酯系硬化劑中之1種以上，再更佳為酚系硬化劑。 　　[0087] 作為酚系硬化劑，從耐熱性及耐水性的觀點來看，較佳為具有酚醛清漆構造之酚系硬化劑、或具有酚醛清漆構造之萘酚系硬化劑。又，從與配線層之密著性的觀點來看，較佳為含氮酚系硬化劑，更佳為含有三嗪骨架之酚系硬化劑。其中，從高度滿足耐熱性、耐水性及與配線層之密著性的觀點來看，較佳為含有三嗪骨架之酚酚醛清漆硬化劑。 　　[0088] 作為酚系硬化劑之具體例，可列舉明和化成公司製之「MEH-7700」、「MEH-7810」、「MEH-7851」、日本化藥公司製之「NHN」、「CBN」、「GPH」、新日鐵住金公司製之「SN170」、「SN180」、「SN190」、「SN475」、「SN485」、「SN495V」、「SN375」、「SN395」、DIC公司製之「TD-2090」、「LA-7052」、「LA-7054」、「LA-1356」、「LA-3018-50P」、「EXB-9500」、「HPC-9500」、「KA-1160」、「KA-1163」、「KA-1165」、群榮化學公司製之「GDP-6115L」、「GDP-6115H」、三菱瓦斯化學(股)製「OPE-1000」等。 　　[0089] 從得到與配線層之密著性優異之絕緣層的觀點來看，活性酯系硬化劑亦佳。作為活性酯系硬化劑，雖並未特別限制，但一般而言，係優選使用酚酯類、硫酚酯類、N-羥基胺酯類、雜環羥基化合物之酯類等之於1分子中具有2個以上反應活性高之酯基的化合物。該活性酯系硬化劑，較佳為藉由羧酸化合物及/或硫羧酸化合物與羥基化合物及/或硫醇化合物的縮合反應所得者。尤其是從提昇耐熱性的觀點來看，較佳為從羧酸化合物與羥基化合物所得之活性酯系硬化劑，更佳為從羧酸化合物與酚化合物及/或萘酚化合物所得之活性酯系硬化劑。作為羧酸化合物，例如可列舉苯甲酸、乙酸、琥珀酸、馬來酸、衣康酸、苯二甲酸、間苯二甲酸、對苯二甲酸、苯均四酸等。作為酚化合物或萘酚化合物，例如可列舉對苯二酚、間苯二酚、雙酚A、雙酚F、雙酚S、酚酞(Phenolphthalein)、甲基化雙酚A、甲基化雙酚F、甲基化雙酚S、酚、o-甲酚、m-甲酚、p-甲酚、兒茶酚、α-萘酚、β-萘酚、1,5-二羥基萘、1,6-二羥基萘、2,6-二羥基萘、二羥基二苯甲酮、三羥基二苯甲酮、四羥基二苯甲酮、間苯三酚、苯三酚、雙環戊二烯型二酚化合物、酚酚醛清漆等。於此，所謂「雙環戊二烯型二酚化合物」，係指於雙環戊二烯1分子縮合酚2分子所得之二酚化合物。 　　[0090] 具體而言，較佳為包含雙環戊二烯型二酚構造之活性酯化合物、包含萘構造之活性酯化合物、包含酚酚醛清漆之乙醯化物之活性酯化合物、包含酚酚醛清漆之苯甲醯基化物的活性酯化合物，其中，更佳為包含萘構造之活性酯化合物、包含雙環戊二烯型二酚構造之活性酯化合物。所謂「雙環戊二烯型二酚構造」，係表示由伸苯基-二環伸戊基-伸苯基所構成之2價構造單位。 　　[0091] 作為活性酯系硬化劑之市售品，作為包含雙環戊二烯型二酚構造之活性酯化合物，可列舉「EXB9451」、「EXB9460」、「EXB9460S」、「HPC-8000-65T」、「HPC-8000H-65TM」、「EXB-8000L-65TM」(DIC公司製)，作為包含萘構造之活性酯化合物，可列舉「EXB9416-70BK」(DIC公司製)，作為包含酚酚醛清漆之乙醯化物之活性酯化合物，可列舉「DC808」(三菱化學公司製)，作為包含酚酚醛清漆之苯甲醯基化物之活性酯化合物，可列舉「YLH1026」(三菱化學公司製)，作為酚酚醛清漆之乙醯化物之活性酯系硬化劑，可列舉「DC808」(三菱化學公司製)，作為酚酚醛清漆之苯甲醯基化物之活性酯系硬化劑，可列舉「YLH1026」(三菱化學公司製)、「YLH1030」(三菱化學公司製)、「YLH1048」(三菱化學公司製)等。 　　[0092] 作為苯并噁嗪系硬化劑之具體例，可列舉昭和高分子公司製之「HFB2006M」、四國化成工業公司製之「P-d」、「F-a」。 　　[0093] 作為氰酸酯酯系硬化劑，例如可列舉雙酚A二氰酸酯、聚酚氰酸酯、寡(3-亞甲基-1,5-伸苯基氰酸酯)、4,4’-亞甲基雙(2,6-二甲基苯基氰酸酯)、4,4’-亞乙基二苯基二氰酸酯、六氟雙酚A二氰酸酯、2,2-雙(4-氰酸酯)苯基丙烷、1,1-雙(4-氰酸酯苯基甲烷)、雙(4-氰酸酯-3,5-二甲基苯基)甲烷、1,3-雙(4-氰酸酯苯基-1-(甲基亞乙基))苯、雙(4-氰酸酯苯基)硫醚及雙(4-氰酸酯苯基)醚等之2官能氰酸酯樹脂、由酚酚醛清漆及甲酚酚醛清漆等所衍生之多官能氰酸酯樹脂、此等氰酸酯樹脂一部分經三嗪化之預聚物等。作為氰酸酯酯系硬化劑之具體例，可列舉Lonza Japan公司製之「PT30」及「PT60」(皆為酚酚醛清漆型多官能氰酸酯酯樹脂)、「BA230」、「BA230S75」(雙酚A二氰酸酯的一部分或全部成為經三嗪化之三聚物的預聚物)等。 　　[0094] 樹脂組成物含有(d)成分的情況下，樹脂組成物中之硬化劑的含量雖並未特別限定，但較佳為10質量%以下，更佳為8質量%以下，再更佳為5質量%以下。又，下限並未特別限制，較佳為1質量%以上。 　　[0095] ＜(g)硬化促進劑＞ 　　樹脂組成物可包含(g)硬化促進劑。作為硬化促進劑，例如可列舉磷系硬化促進劑、胺系硬化促進劑、咪唑系硬化促進劑、胍系硬化促進劑、金屬系硬化促進劑等，較佳為磷系硬化促進劑、胺系硬化促進劑、咪唑系硬化促進劑、金屬系硬化促進劑，更佳為胺系硬化促進劑、咪唑系硬化促進劑、金屬系硬化促進劑。硬化促進劑可1種單獨使用，亦可組合2種以上使用。 　　[0096] 作為磷系硬化促進劑，例如可列舉三苯基膦、鏻硼酸酯化合物、四苯基鏻四苯基硼酸酯、n-丁基鏻四苯基硼酸酯、四丁基鏻癸酸鹽、(4-甲基苯基)三苯基鏻硫氰酸酯、四苯基鏻硫氰酸酯、丁基三苯基鏻硫氰酸酯等，較佳為三苯基膦、四丁基鏻癸酸鹽。 　　[0097] 作為胺系硬化促進劑，例如可列舉三乙基胺、三丁基胺等之三烷基胺、4-二甲基胺基吡啶、苄基二甲基胺、2,4,6,-參(二甲基胺基甲基)酚、1,8-二氮雜聯環(5,4,0)-十一碳烯等，較佳為4-二甲基胺基吡啶、1,8-二氮雜聯環(5,4,0)-十一碳烯。 　　[0098] 作為咪唑系硬化促進劑，例如可列舉2-甲基咪唑、2-十一烷基咪唑、2-十七烷基咪唑、1,2-二甲基咪唑、2-乙基-4-甲基咪唑、1,2-二甲基咪唑、2-乙基-4-甲基咪唑、2-苯基咪唑、2-苯基-4-甲基咪唑、1-苄基-2-甲基咪唑、1-苄基-2-苯基咪唑、1-氰乙基-2-甲基咪唑、1-氰乙基-2-十一烷基咪唑、1-氰乙基-2-乙基-4-甲基咪唑、1-氰乙基-2-苯基咪唑、1-氰乙基-2-十一烷基咪唑鎓偏苯三酸酯、1-氰乙基-2-苯基咪唑鎓偏苯三酸酯、2,4-二胺基-6-[2’-甲基咪唑基-(1’)]-乙基-s-三嗪、2,4-二胺基-6-[2’-十一烷基咪唑基-(1’)]-乙基-s-三嗪、2,4-二胺基-6-[2’-乙基-4’-甲基咪唑基-(1’)]-乙基-s-三嗪、2,4-二胺基-6-[2’-甲基咪唑基-(1’)]-乙基-s-三嗪異氰脲酸加成物、2-苯基咪唑異氰脲酸加成物、2-苯基-4,5-二羥基甲基咪唑、2-苯基-4-甲基-5-羥基甲基咪唑、2,3-二氫-1H-吡咯[1,2-a]苯并咪唑、1-十二烷基-2-甲基-3-苄基咪唑鎓氯化物、2-甲基咪唑啉、2-苯基咪唑啉等之咪唑化合物及咪唑化合物與環氧樹脂的加合物，較佳為2-乙基-4-甲基咪唑、1-苄基-2-苯基咪唑。 　　[0099] 作為咪唑系硬化促進劑，可使用市售品，例如可列舉三菱化學公司製之「P200-H50」等。 　　[0100] 作為胍系硬化促進劑，例如可列舉雙氰胺、1-甲基胍、1-乙基胍、1-環己基胍、1-苯基胍、1-(o-甲苯基)胍、二甲基胍、二苯基胍、三甲基胍、四甲基胍、五甲基胍、1,5,7-三氮雜聯環[4.4.0]癸-5-烯、7-甲基-1,5,7-三氮雜聯環[4.4.0]癸-5-烯、1-甲基雙胍、1-乙基雙胍、1-n-丁基雙胍、1-n-十八烷基雙胍、1,1-二甲基雙胍、1,1-二乙基雙胍、1-環己基雙胍、1-烯丙基雙胍、1-苯基雙胍、1-(o-甲苯基)雙胍等，較佳為雙氰胺、1,5,7-三氮雜聯環[4.4.0]癸-5-烯。 　　[0101] 作為金屬系硬化促進劑，例如可列舉鈷、銅、鋅、鐵、鎳、錳、錫等之金屬的有機金屬錯合物或有機金屬鹽。作為有機金屬錯合物之具體例，可列舉鈷(II)乙醯丙酮酸鹽、鈷(III)乙醯丙酮酸鹽等之有機鈷錯合物、銅(II)乙醯丙酮酸鹽等之有機銅錯合物、鋅(II)乙醯丙酮酸鹽等之有機鋅錯合物、鐵(III)乙醯丙酮酸鹽等之有機鐵錯合物、鎳(II)乙醯丙酮酸鹽等之有機鎳錯合物、錳(II)乙醯丙酮酸鹽等之有機錳錯合物等。作為有機金屬鹽，例如可列舉辛酸鋅、辛酸錫、環烷酸鋅、環烷酸鈷、硬脂酸錫、硬脂酸鋅等。 　　[0102] 樹脂組成物含有(g)成分的情況下，樹脂組成物中之硬化促進劑的含量雖並未特別限定，但較佳為將(b)成分與(f)硬化劑的不揮發成分合計量定為100質量%時，為0.01質量%～3質量%。 　　[0103] ＜(h)阻燃劑＞ 　　樹脂組成物可包含(h)阻燃劑。作為阻燃劑，例如可列舉有機磷系阻燃劑、含有有機系氮之磷化合物、氮化合物、矽系阻燃劑、金屬氫氧化物等。阻燃劑可1種單獨使用、或併用2種以上。 　　[0104] 作為阻燃劑，可使用市售品，例如可列舉三光公司製之「HCA-HQ」等。 　　[0105] 樹脂組成物含有阻燃劑的情況下，阻燃劑的含量雖並未特別限定，但以較佳為0.5質量%～20質量%，更佳為0.5質量%～15質量%，再更佳為0.5質量%～10質量%。 　　[0106] ＜(i)任意添加劑＞ 　　樹脂組成物進而如有必要可包含其他添加劑，作為該其他添加劑，例如可列舉有機銅化合物、有機鋅化合物及有機鈷化合物等之有機金屬化合物以及黏結劑、增黏劑、消泡劑、整平劑、密著性賦予劑及著色劑等之樹脂添加劑等。 　　[0107] ＜樹脂組成物之物性＞ 　　使本發明之樹脂組成物於180℃熱硬化1小時之硬化物，在23℃之彈性率為8GPa以上。針對上限雖並未特別限定，但例如可成為18GPa以下、15GPa以下、13GPa以下、11GPa以下。藉由將彈性率定為8GPa以上，可抑制硬化物之翹曲的發生。上述彈性率可依後述之＜彈性率、拉伸斷裂點強度的測定＞所記載之方法測定。 　　[0108] 使本發明之樹脂組成物於180℃熱硬化1小時之硬化物，在23℃之斷裂點強度(MPa)為55以上，較佳為60以上，更佳為65以上。針對上限雖並未特別限定，但例如可成為100以下。上述斷裂點強度可依後述之＜彈性率、拉伸斷裂點強度的測定＞所記載之方法測定。 　　[0109] 本發明之樹脂組成物可帶來抑制翹曲，強度及密著性優異之硬化物(絕緣層)，又，由於包含(b)成分，故(a)成分的相溶性良好。據此，本發明之樹脂組成物，可適合作為用以形成半導體晶片封裝之絕緣層的樹脂組成物(半導體晶片封裝之絕緣層用樹脂組成物)、用以形成電路基板(包含印刷配線板)之絕緣層的樹脂組成物(電路基板之絕緣層用樹脂組成物)使用，此外亦可進一步適合作為用以形成藉由鍍敷形成導體層之層間絕緣層的樹脂組成物(藉由鍍敷形成導體層之電路基板的層間絕緣層用樹脂組成物)使用。 　　又，亦可適合作為用以密封半導體晶片之樹脂組成物(半導體晶片密封用樹脂組成物)、於半導體晶片用以形成配線之樹脂組成物(半導體晶片配線形成用樹脂組成物)使用。 　　[0110] [樹脂薄片] 　　本發明之樹脂薄片係包含支持體、與樹脂組成物層而成，該樹脂組成物層係與該支持體接合，樹脂組成物層由本發明之樹脂組成物所構成。 　　[0111] 樹脂組成物層的厚度從薄型化的觀點來看，較佳為200μm以下，更佳為150μm以下，再更佳為100μm以下、80μm以下、60μm以下、50μm以下或40μm以下。樹脂組成物層的厚度的下限雖並未特別限定，但通常可成為1μm以上、5μm以上、10μm以上等。 　　[0112] 作為支持體，例如可列舉由塑膠材料所構成之薄膜、金屬箔、脫模紙，較佳為由塑膠材料所構成之薄膜、金屬箔。 　　[0113] 作為支持體，使用由塑膠材料所構成之薄膜的情況下，作為塑膠材料，例如可列舉聚對苯二甲酸乙二酯(以下有時簡稱為「PET」)、聚萘二甲酸乙二酯(以下有時簡稱為「PEN」)等之聚酯、聚碳酸酯(以下有時簡稱為「PC」)、聚甲基丙烯酸甲酯(PMMA)等之丙烯醯基、環狀聚烯烴、三乙醯基纖維素(TAC)、聚醚硫化物(PES)、聚醚酮、聚醯亞胺等。其中，較佳為聚對苯二甲酸乙二酯、聚萘二甲酸乙二酯，特佳為便宜之聚對苯二甲酸乙二酯。 　　[0114] 作為支持體，使用金屬箔的情況下，作為金屬箔，例如可列舉銅箔、鋁箔等，較佳為銅箔。作為銅箔，可使用由銅之單金屬所構成之箔，亦可使用由銅與其他金屬(例如錫、鉻、銀、鎂、鎳、鋯、矽、鈦等)的合金所構成之箔。 　　[0115] 支持體於和樹脂組成物層接合的面可實施磨砂處理、電暈處理。 　　[0116] 又，作為支持體，可使用於與樹脂組成物層接合的面具有脫模層之附脫模層的支持體。作為附脫模層的支持體之脫模層所使用之脫模劑，例如可列舉選自由醇酸樹脂、聚烯烴樹脂、胺基甲酸乙酯樹脂及矽樹脂所構成之群組中之1種以上的脫模劑。附脫模層的支持體可使用市售品，例如可列舉具有將醇酸樹脂系脫模劑作為主成分之脫模層的PET薄膜之Lintec公司製之「SK-1」、「AL-5」、「AL-7」、Toray公司製「Lumirror T60」帝人公司製之「Purex」、Unitika公司製之「Unipiel」等。 　　[0117] 作為支持體的厚度，雖並未特別限定，但較佳為5μm～75μm的範圍，更佳為10μm～60μm的範圍。尚，使用附脫模層的支持體的情況下，較佳為附脫模層的支持體全體的厚度為上述範圍。 　　[0118] 樹脂薄片例如可藉由於有機溶劑調製溶解樹脂組成物之樹脂清漆，將此樹脂清漆使用模塗佈機等塗佈在支持體上，進而使其乾燥，形成樹脂組成物層來製造。 　　[0119] 作為有機溶劑，例如可列舉丙酮、甲基乙基酮(MEK)及環己酮等之酮類、乙酸乙酯、乙酸丁酯、溶纖劑乙酸酯、丙二醇單甲基醚乙酸酯及卡必醇乙酸酯等之乙酸酯類、溶纖劑及丁基卡必醇等之卡必醇類、甲苯及二甲苯等之芳香族烴類、二甲基甲醯胺、二甲基乙醯胺(DMAc)及N-甲基吡咯烷酮等之醯胺系溶劑等。有機溶劑可1種單獨使用，亦可組合2種以上使用。 　　[0120] 乾燥可藉由加熱、吹送熱風等之周知的方法實施。乾燥條件雖並未特別限定，但樹脂組成物層中之有機溶劑的含量成為10質量%以下，較佳為成為5質量%以下的方式來乾燥。雖因樹脂清漆中之有機溶劑的沸點而不同，但例如使用包含30質量%～60質量%之有機溶劑的樹脂清漆時，藉由使其於50℃～150℃乾燥3分鐘～10分鐘，可形成樹脂組成物層。 　　[0121] 在樹脂薄片，在未與樹脂組成物層之支持體接合的面(亦即，與支持體相反側的面)中，可進一步層合依照支持體之保護薄膜。保護薄膜的厚度雖並非被特別限定者，但例如為1μm～40μm。藉由層合保護薄膜，可防止對樹脂組成物層的表面之塵埃等之附著或傷痕。樹脂薄片可捲繞成輥狀保存。樹脂薄片具有保護薄膜的情況下，可藉由剝離保護薄膜來使用。 　　[0122] 取代本發明之樹脂薄片，可改使用於薄片狀纖維基材含浸本發明之樹脂組成物而形成之預浸料。 　　[0123] 預浸料所使用之薄片狀纖維基材並未特別限定，可使用常被作為玻璃布、芳綸不織布、液晶聚合物不織布等之預浸料用基材使用者。從薄型化的觀點來看，薄片狀纖維基材的厚度較佳為900μm以下。薄片狀纖維基材的厚度之下限雖並未特別限定，但通常可為1μm以上。 　　[0124] 預浸料可藉由熱熔法、溶劑法等之周知方法製造。 　　[0125] 預浸料的厚度可與在上述之樹脂薄片之樹脂組成物層為相同的範圍。 　　[0126] 本發明之樹脂薄片在半導體晶片封裝之製造，可適合使用在用以形成絕緣層(半導體晶片封裝之絕緣用樹脂薄片)。 　　例如，本發明之樹脂薄片，可適合使用在用以形成電路基板之絕緣層(電路基板之絕緣層用樹脂薄片)，此外，可適合進一步使用在用以形成藉由鍍敷形成導體層之層間絕緣層(藉由鍍敷形成導體層之電路基板的層間絕緣層用)。作為使用如此之基板的封裝之例，可列舉FC-CSP、MIS-BGA封裝、ETS-BGA封裝。 　　又，本發明之樹脂薄片，可適合使用在用以密封半導體晶片(半導體晶片密封用樹脂薄片)、或用以在半導體晶片形成配線(半導體晶片配線形成用樹脂薄片)，例如可適合使用在扇出(Fan-out)型WLP(Wafer Level Package)、Fan-in型WLP、扇出(Fan-out)型PLP(Panel Level Package)、Fan-in型PLP等。又，亦可適合使用在將半導體晶片連接在基板後所使用之MUF(Molding Under Filling)材料等。 　　本發明之樹脂薄片，又，要求高絕緣信賴性之其他廣泛用途，例如可適合使用在用以形成印刷配線板等之電路基板的絕緣層。 　　[0127] [電路基板] 　　本發明之電路基板，係包含藉由本發明之樹脂組成物的硬化物所形成之絕緣層。 　　本發明之電路基板之製造方法可包含： 　　(1)準備具有基材、與設置在該基材之至少一側的面之配線層的附配線層之基材之步驟、 　　(2)將本發明之樹脂薄片以配線層嵌入樹脂組成物層的方式，層合在附配線層之基材上，使其熱硬化而形成絕緣層之步驟、 　　(3)層間連接配線層之步驟。又，電路基板之製造方法可包含(4)去除基材之步驟。 　　[0128] 步驟(3)若可將配線層進行層間連接，雖並未特別限定，但較佳為於絕緣層形成通孔，形成配線層之步驟及研磨或研削絕緣層，使配線層露出之步驟中之至少任一種之步驟。 　　[0129] ＜步驟(1)＞ 　　步驟(1)係準備具有基材、與設置在該基材之至少一側的面之配線層的附配線層之基材之步驟。例如，附配線層之基材係於基材的兩面分別具有基材的一部分之第1金屬層、第2金屬層，與第2金屬層之基材側的面相反側的面具有配線層。詳細而言，係於基材上層合乾膜(感光性抗蝕薄膜)，使用光罩進行曝光、顯影而形成圖型乾膜。將經顯影之圖型乾膜作為鍍敷遮罩，藉由電解鍍敷法形成配線層後，剝離圖型乾膜。尚，可不具有第1金屬層、第2金屬層。 　　[0130] 作為基材，例如可列舉玻璃環氧基板、金屬基板(不銹鋼或冷軋鋼板(SPCC)等)、聚酯基板、聚醯亞胺基板、BT樹脂基板、熱硬化型聚伸苯基醚基板等之基板，可於基板表面形成銅箔等之金屬層。又，可於表面形成可剝離之第1金屬層及第2金屬層(例如三井金屬之附載體銅箔之極薄銅箔、商品名「Micro Thin」)等之金屬層。 　　[0131] 作為乾膜，只要是由光阻組成物所構成之感光性的乾膜，則並未特別限定，例如可使用酚醛清漆樹脂、丙烯酸樹脂等之乾膜。乾膜可使用市售品。 　　[0132] 基材與乾膜的層合條件，係與以後述之步驟(2)之樹脂薄片嵌入配線層的方式，進行層合時的條件相同，較佳範圍亦相同。 　　[0133] 將乾膜層合於基材上後，為了對於乾膜形成所期望之圖型，使用光罩以預定的條件進行曝光、顯影。 　　[0134] 配線層之線(電路寬)/空間(電路間的寬)比雖並未特別限制，但較佳為20/20μm以下(即間距為40μm以下)，0.5/0.5μm以上。間距係通過配線層的全體不須為同一。配線層之最小間距可成為40μm以下。 　　[0135] 形成乾膜之圖型後，形成配線層，剝離乾膜。於此，配線層的形成，可將形成所期望圖型之乾膜作為鍍敷遮罩使用，且可藉由鍍敷法實施。 　　[0136] 配線層所使用之導體材料並未特別限定。於適合之實施形態，配線層係包含選自由金、鉑、鈀、銀、銅、鋁、鈷、鉻、鋅、鎳、鈦、鎢、鐵、錫及銦所構成之群組中之至少一種以上的金屬。配線層可為單金屬層亦可為合金層，作為合金層，例如可列舉選自由上述之群組中之2種以上的金屬之合金(例如鎳暨鉻合金、銅暨鎳合金及銅暨鈦合金)所形成者。 　　[0137] 配線層的厚度雖因所期望配線板的設計而定，但較佳為3μm～35μm。在步驟(3)，採用研磨或研削絕緣層，使配線層露出之層間連接配線層之步驟時，較佳為層間連接之配線、與未連接之配線的厚度不同。配線層的厚度可藉由重複前述之圖型形成來調整。各配線層當中，有最厚之厚度之配線層(導電性柱)的厚度雖因所期望配線板的設計而定，但，較佳為100μm以下2μm以上。又，層間連接之配線可成為凸型。 　　[0138] 形成配線層後，剝離乾膜。乾膜之剝離，例如可使用氫氧化鈉溶液等之鹼性剝離液實施。如有必要，可將不要之配線圖型藉由蝕刻等去除，亦可形成所期望之配線圖型。對於形成之配線層的間距係如先述。 　　[0139] ＜步驟(2)＞ 　　步驟(2)係將本發明之樹脂薄片以配線層嵌入樹脂組成物層的方式，層合在附配線層之基材上，使其熱硬化而形成絕緣層之步驟。詳細而言，係將於前述之步驟(1)所得之附配線層之基材的配線層以嵌入樹脂薄片的樹脂組成物層的方式，使其層合，使樹脂薄片之樹脂組成物層熱硬化而形成絕緣層。 　　[0140] 配線層與樹脂薄片的層合，去除樹脂薄片的保護薄膜後，例如可藉由從支持體側將樹脂薄片加熱壓著在配線層來進行。作為將樹脂薄片加熱壓著在配線層之構件(以下亦稱為「加熱壓著構件」)，例如可列舉經加熱之金屬板(SUS鏡板等)或金屬輥(SUS輥)等。尚，較佳為並非將加熱壓著構件直接沖壓在樹脂薄片，而是於配線層的表面凹凸以樹脂薄片充分追隨的方式，透過耐熱橡膠等之彈性材進行沖壓。 　　[0141] 配線層與樹脂薄片的層合，去除樹脂薄片的保護薄膜後，可藉由真空層合法實施。在真空層合法，加熱壓著溫度較佳為60℃～160℃的範圍，加熱壓著壓力較佳為0.098MPa～1.77MPa的範圍，加熱壓著時間較佳為20秒～400秒的範圍。層合較佳為以壓力13hPa以下之減壓條件下實施。 　　[0142] 層合之後，於常壓(大氣壓)下，例如藉由將加熱壓著構件從支持體側進行沖壓，可進行經層合之樹脂薄片的平滑化處理。平滑化處理的沖壓條件可成為與上述層合之加熱壓著條件相同的條件。尚，層合與平滑化處理可使用上述市售之真空層合機連續性進行。 　　[0143] 將樹脂組成物層以嵌入配線層的方式，層合在附配線層之基材上後，熱硬化樹脂組成物層而形成絕緣層。例如，樹脂組成物層之熱硬化條件，雖因樹脂組成物的種類等而不同，但硬化溫度可成為120℃～240℃的範圍，硬化時間可成為5分鐘～120分鐘的範圍。熱硬化樹脂組成物層之前，可將樹脂組成物層在較硬化溫度更低之溫度進行預備加熱。 　　[0144] 樹脂薄片之支持體可於附配線層之基材上層合樹脂薄片，進行熱硬化後剝離，亦可於附配線層之基材上層合樹脂薄片之前剝離支持體。又，可於後述之粗糙化處理步驟之前剝離支持體。 　　[0145] ＜步驟(3)＞ 　　步驟(3)係層間連接配線層之步驟。詳細而言，係於絕緣層形成通孔，形成導體層，層間連接配線層之步驟。或研磨或研削絕緣層，使配線層露出層間連接配線層之步驟。 　　[0146] 採用於絕緣層形成通孔，形成導體層，層間連接配線層之步驟的情況下，通孔的形成雖並未特別限定，雖可列舉雷射照射、蝕刻、機械鑽孔等，但較佳為藉由雷射照射進行。此雷射照射作為光源，可使用用碳酸氣體雷射、YAG雷射、準分子雷射等之任意適合的雷射加工機進行。詳細而言，係由樹脂薄片之支持體的面側進行雷射照射，貫通支持體及絕緣層使配線層露出而形成通孔。 　　[0147] 雷射照射的條件並未特別限定，雷射照射可依因應所選擇之手段的常法藉由任意適合的步驟實施。 　　[0148] 通孔之形狀，亦即於延伸方向所看到時之開口輪廓的形狀雖並未特別限定，但一般而言為圓形(略圓形)。 　　[0149] 通孔形成後，可進行通孔內之膠渣去除步驟，亦即進行除膠渣步驟。將後述之導體層的形成藉由鍍敷步驟進行的情況下，對於通孔，例如可進行濕式之除膠渣處理，將導體層的形成藉由濺鍍步驟進行的情況下，例如可進行電漿處理步驟等之乾式除膠渣步驟。又，除膠渣步驟可兼具粗糙化處理步驟。 　　[0150] 形成導體層之前，可對於通孔及絕緣層進行粗糙化處理。粗糙化處理可採用通常所進行之周知的順序、條件。作為乾式之粗糙化處理之例，可列舉電漿處理等，作為濕式之粗糙化處理之例，可列舉以此順序進行藉由膨潤液之膨潤處理、藉由氧化劑之粗糙化處理及藉由中和液之中和處理的方法。 　　[0151] 形成通孔後，形成導體層。構成導體層之導體材料並未特別限定，導體層可藉由鍍敷、濺鍍、蒸鍍等以往周知之任意適合的方法形成，以藉由鍍敷形成較佳。適合之一實施形態，例如可藉由半添加法、全添加法等之以往周知的技術鍍敷在絕緣層的表面，形成具有所期望之配線圖型的導體層。又，在樹脂薄片之支持體為金屬箔時，可藉由減去法等之以往周知的技術，形成具有所期望之配線圖型的導體層。導體層可為單層構造，亦可為由不同種類之金屬或合金所構成之單金屬層或層合2層以上合金層之複層構造。 　　[0152] 詳細而言，係於絕緣層的表面，藉由無電解鍍敷形成鍍敷種晶層。其次，於經形成之鍍敷種晶層上，對應所期望之配線圖型，形成使鍍敷種晶層的一部分露出之遮罩圖型。於經露出之鍍敷種晶層上藉由電解鍍敷形成電解鍍敷層。此時，與電解鍍敷層的形成同時，可將通孔藉由電解鍍敷嵌入而形成填孔(Filled via)。形成電解鍍敷層後，去除遮罩圖型。然後，將不要之鍍敷種晶層藉由蝕刻等去除，可形成具有所期望之配線圖型的導體層。尚，形成導體層時，遮罩圖型的形成所使用之乾膜係與上述乾膜相同。 　　[0153] 導體層不僅線狀之配線，例如亦可包含可搭載外部端子之電極墊(Land)等。又，導體層可為僅由電極墊所構成。 　　[0154] 又，導體層可藉由形成鍍敷種晶層後，未使用遮罩圖型即形成電解鍍敷層及填孔，然後，進行藉由蝕刻之圖型化來形成。 　　[0155] 採用研磨或研削絕緣層，使配線層露出，層間連接配線層之步驟的情況下，作為絕緣層之研磨方法或研削方法，可使配線層曝露，若研磨或研削面為水平，則並未特別限定，可適用以往周知之研磨方法或研削方法，例如可列舉藉由化學機械研磨裝置之化學機械研磨方法、拋光(buff)等之機械研磨方法、藉由研磨石回轉之平面研削方法等。與於絕緣層形成通孔，形成導體層，層間連接配線層之步驟相同，可進行去除膠渣之步驟、進行粗糙化處理之步驟，可形成導體層。又，不需要使全部之配線層露出，可使配線層的一部分露出。 　　[0156] ＜步驟(4)＞ 　　電路基板之製造方法係去除基材，形成本發明之電路基板之步驟。基材的去除方法並未特別限定。適合之一實施形態，於第1及第2金屬層的界面從電路基板剝離基材，將第2金屬層例如以氯化銅水溶液等蝕刻去除。如有必要，可將導體層以保護薄膜保護的狀態剝離基材。 　　[0157] [半導體晶片封裝] 　　本發明之半導體晶片封裝的第1態樣，係一種半導體晶片封裝，其係於上述本發明之電路基板上搭載半導體晶片。藉由於上述本發明之電路基板，接合半導體晶片，可製得半導體晶片封裝。 　　[0158] 只要半導體晶片之端子電極與電路基板的電路配線導體連接，則接合條件並未特別限定，可使用在半導體晶片之倒裝晶片實裝所使用之周知條件。又，於半導體晶片與電路基板間可透過絕緣性的接著劑接合。 　　[0159] 適合之一實施形態係將半導體晶片壓著在電路基板。作為壓著條件，例如壓著溫度可成為120℃～240℃的範圍，壓著時間可成為1秒～60秒的範圍。 　　[0160] 又，其他適合之一實施形態係將半導體晶片回流到電路基板進行接合。作為回流條件，例如可成為120℃～300℃的範圍。 　　[0161] 將半導體晶片接合在電路基板後，例如亦可藉由將半導體晶片以模具底部填充(Mold underfill)材填充，而得到半導體晶片封裝。以模具底部填充材填充之方法可用周知之方法實施。本發明之樹脂組成物或樹脂薄片亦可作為模具底部填充材使用。 　　[0162] 本發明之半導體晶片封裝的第2態樣為半導體晶片封裝(扇出(Fan-out)型WLP)。半導體晶片封裝之製造方法係包含： 　　(A)層合暫時固定薄膜於基材之步驟、 　　(B)將半導體晶片暫時固定在暫時固定薄膜上之步驟、 　　(C)將本發明之樹脂薄片的樹脂組成物層層合在半導體晶片上、或將本發明之樹脂組成物塗佈在半導體晶片上，使其熱硬化而形成密封層之步驟、 　　(D)將基材及暫時固定薄膜從半導體晶片剝離之步驟、 　　(E)於剝離半導體晶片之基材及暫時固定薄膜的面形成再配線形成層(絕緣層)之步驟、 　　(F)於再配線形成層(絕緣層)上形成導體層(再配線層)之步驟及 　　(G)於導體層上形成阻焊層之步驟。又，半導體晶片封裝之製造方法可包含(H)將複數之半導體晶片封裝切割成各個之半導體晶片封裝，進行個片化之步驟。 　　[0163] ＜步驟(A)＞ 　　步驟(A)係層合暫時固定薄膜於基材之步驟。基材與暫時固定薄膜的層合條件，係與在電路基板之製造方法之步驟(2)的配線層與樹脂薄片的層合條件相同，較佳範圍亦相同。 　　[0164] 基材所使用之材料並未特別限定。作為基材，可列舉由矽晶圓；玻璃晶圓；玻璃基板；銅、鈦、不銹鋼、冷軋鋼板(SPCC)等之金屬基板；於玻璃纖維浸漬環氧樹脂等之經熱硬化處理之基板(例如FR-4基板)；雙馬來醯亞胺三嗪樹脂(BT樹脂)所構成之基板等。 　　[0165] 暫時固定薄膜，若為可在後述之步驟(D)從半導體晶片剝離，同時暫時固定半導體晶片，則材料並未特別限定。暫時固定薄膜可使用市售品。作為市售品，可列舉日東電工公司製之Riva alpha等。 　　[0166] ＜步驟(B)＞ 　　步驟(B)係將半導體晶片暫時固定在暫時固定薄膜上之步驟。半導體晶片之暫時固定可使用倒裝晶片接合器、晶粒接合器等之周知的裝置進行。半導體晶片之配置的佈置及配置數可因應暫時固定薄膜的形狀、大小、作為目的之半導體封裝的生產數等適當設定，例如可整列成複數行，且整列成複數列之矩陣狀來暫時固定。 　　[0167] ＜步驟(C)＞ 　　步驟(C)係將本發明之樹脂薄片的樹脂組成物層層合在半導體晶片上、或將本發明之樹脂組成物塗佈在半導體晶片上，使其熱硬化而形成密封層之步驟。於步驟(C)，較佳為將本發明之樹脂薄片的樹脂組成物層層合在半導體晶片上，使其熱硬化而形成密封層。 　　[0168] 半導體晶片與樹脂薄片的層合可藉由去除樹脂薄片之保護薄膜後，例如藉由從支持體側將樹脂薄片加熱壓著在半導體晶片來進行。作為將樹脂薄片加熱壓著在半導體晶片之構件(以下亦稱為「加熱壓著構件」)，例如可列舉經加熱之金屬板(SUS鏡板等)或金屬輥(SUS輥)等。尚，較佳為並非將加熱壓著構件直接沖壓在樹脂薄片，而是於半導體晶片的表面凹凸以樹脂薄片充分追隨的方式，透過耐熱橡膠等之彈性材進行沖壓。 　　[0169] 又，半導體晶片與樹脂薄片的層合，可去除樹脂薄片的保護薄膜後，藉由真空層合法來實施。在真空層合法之層合條件，係與在電路基板之製造方法之步驟(2)之配線層與樹脂薄片的層合條件相同，較佳範圍亦相同。 　　[0170] 樹脂薄片之支持體可於半導體晶片上層合樹脂薄片，於經熱硬化後進行剝離，亦可於半導體晶片上層合樹脂薄片之前剝離支持體。 　　[0171] 作為樹脂組成物之塗佈條件，係與形成在本發明之樹脂薄片之樹脂組成物層時之塗佈條件相同，較佳範圍亦相同。 　　[0172] ＜步驟(D)＞ 　　步驟(D)係將基材及暫時固定薄膜從半導體晶片剝離之步驟。剝離之方法可因應暫時固定薄膜的材質等適當變更，例如可列舉使暫時固定薄膜加熱、發泡(或膨脹)而剝離之方法及從基材側照射紫外線，使暫時固定薄膜的黏著力降低而剝離之方法等。 　　[0173] 在使暫時固定薄膜加熱、發泡(或膨脹)而剝離之方法，加熱條件通常為於100℃～250℃1秒～90秒或5分鐘～15分鐘。又，在從基材側照射紫外線，使暫時固定薄膜的黏著力降低而剝離之方法，紫外線的照射量通常為10mJ/cm2 ～1000mJ/cm2 。 　　[0174] ＜步驟(E)＞ 　　步驟(E)係於剝離半導體晶片之基材及暫時固定薄膜的面形成再配線形成層(絕緣層)之步驟。 　　[0175] 形成再配線形成層(絕緣層)之材料，若為於再配線形成層(絕緣層)形成時具有絕緣性，則並未特別限定，從半導體晶片封裝之製造的容易性的觀點來看，較佳為感光性樹脂、熱硬化性樹脂。作為熱硬化性樹脂，可使用與用以形成本發明之樹脂薄片的樹脂組成物為相同組成之樹脂組成物。 　　[0176] 形成再配線形成層(絕緣層)後，為了層間連接半導體晶片與後述之導體層，可於再配線形成層(絕緣層)形成通孔。 　　[0177] 在形成通孔，形成再配線形成層(絕緣層)之材料為感光性樹脂的情況下，首先，再配線形成層(絕緣層)的表面通過遮罩圖型，照射活性能量線，使照射部之最配線層光硬化。 　　[0178] 作為活性能量線，例如可列舉紫外線、可見光線、電子束、X光等，尤其是以紫外線較佳。紫外線的照射量、照射時間可因應感光性樹脂適當變更。作為曝光方法，可使用將遮罩圖型密著在再配線形成層(絕緣層)，進行曝光之接觸曝光法、與未將遮罩圖型密著在再配線形成層(絕緣層)，使用平行光線進行曝光之非接觸曝光法的任一種。 　　[0179] 其次，藉由顯影再配線形成層(絕緣層)，去除未曝光部，而形成通孔。顯影係濕顯影、乾顯影皆適合。於濕顯影所使用之顯影液可使用周知之顯影液。 　　[0180] 作為顯影之方式，例如可列舉浸漬方式、槳式方式、噴霧方式、刷塗方式、刮方式等，從解像性的觀點來看，適合槳式方式。 　　[0181] 形成再配線形成層(絕緣層)之材料為熱硬化性樹脂的情況下，通孔的形成雖並未特別限定，雖可列舉雷射照射、蝕刻、機械鑽孔等，但較佳為藉由雷射照射進行。雷射照射作為光源，可使用用碳酸氣體雷射、UV-YAG雷射、準分子雷射等之任意適合的雷射加工機來進行。 　　[0182] 通孔的形狀，亦即於延伸方向所看到時之開口輪廓的形狀雖並未特別限定，但一般而言為圓形(略圓形)。通孔的頂徑(再配線形成層(絕緣層)表面之開口的直徑)較佳為50μm以下。下限雖並未特別限定，但較佳為10μm以上。 　　[0183] ＜步驟(F)＞ 　　步驟(F)係於再配線形成層(絕緣層)上形成導體層(再配線層)之步驟。於再配線形成層(絕緣層)上形成導體層之方法，係與形成在電路基板之製造方法之步驟(3)的絕緣層形成通孔後之導體層的方法相同，較佳範圍亦相同。尚，可重複進行步驟(E)及步驟(F)，交替堆疊(Build up)導體層(再配線層)及再配線形成層(絕緣層)。 　　[0184] ＜步驟(G)＞ 　　步驟(G)係於導體層上形成阻焊層之步驟。 　　[0185] 形成阻焊層之材料，若為於阻焊層形成時具有絕緣性，則並未特別限定，從半導體晶片封裝之製造容易性的觀點來看，較佳為感光性樹脂、熱硬化性樹脂。作為熱硬化性樹脂，可使用與用以形成本發明之樹脂薄片的樹脂組成物為相同組成的樹脂組成物。 　　[0186] 又，於步驟(G)，如有必要可進行形成撞擊之碰撞加工。碰撞加工可用焊球、焊料鍍敷等周知的方法進行。又，在碰撞加工之通孔的形成可與步驟(E)同樣進行。 　　[0187] ＜步驟(H)＞ 　　半導體晶片封裝之製造方法除了步驟(A)～(G)之外可包含步驟(H)。步驟(H)係將複數之半導體晶片封裝切割成各個之半導體晶片封裝，進行個片化之步驟。 　　[0188] 本發明之半導體晶片封裝的第3態樣，係將在半導體晶片封裝(扇出(Fan-out)型WLP)之再配線形成層(絕緣層)、阻焊層，以本發明之樹脂組成物或樹脂薄片製造之半導體晶片封裝。 　　[0189] [半導體裝置] 　　作為成為實裝本發明之半導體晶片封裝的半導體裝置，可列舉供於電氣製品(例如電腦、手機、智慧型手機、平板型裝置、穿戴式裝置、數位相機、醫療機器及電視等)及交通工具(例如機車、汽車、電車、船舶及航空機等)等之各種半導體裝置。 [實施例] 　　[0190] 以下，雖將本發明藉由實施例具體說明，但本發明並非被限定於此等之實施例。尚，在以下之記載，「份」及「%」除另有明文規定，分別意指「質量份」及「質量%」。 　　[0191] [合成例1] ＜彈性體A之製造＞ 　　於附有攪拌裝置、溫度計及冷凝器之燒瓶，放置作為溶劑之乙基二甘醇乙酸酯368.41g、Solvesso150(芳香族系溶劑、埃克森美孚公司製)368.41g，放置二苯基甲烷二異氰酸酯100.1g(0.4莫耳)與聚碳酸酯二醇(數平均分子量：約2000、羥基當量：1000、不揮發分：100%、Kuraray(股)製「C-2015N」)400g(0.2莫耳)，於70℃進行4小時反應。接著，放置壬基酚酚醛清漆樹脂(羥基當量229.4g/eq、平均4.27官能、平均計算分子量979.5g/莫耳)195.9g(0.2莫耳)與乙二醇雙脫水偏苯三酸酯41.0g(0.1莫耳)，耗費2小時昇溫至150℃，反應12小時。由FT-IR進行2250cm-1之NCO峰值消失的確認。擁有NCO峰值消失的確認視為反應的終點，將反應物降溫至室溫後，以100網孔之濾布進行過濾，得到具有聚碳酸酯構造之樹脂(不揮發分50質量%)。數平均分子量為6100。 　　[0192] (評估用硬化物的製作) 　　於經脫模劑處理之PET薄膜(Lintec(股)製「501010」、厚度38μm、240mm平方)的脫模劑未處理面，重疊玻璃布基材環氧樹脂兩面覆銅層合板(Panasonic(股)製「R5715ES」、厚度0.7mm、255mm平方)，將四邊以聚醯亞胺接著膠帶(寬10mm)固定(以下為「固定PET薄膜」)。 　　將於實施例及比較例製得之樹脂清漆於以醇酸樹脂系脫模劑(Lintec(股)製「AL-5」)脫模處理之PET薄膜(Toray(股)製「Lumirror R80」、厚度38μm、軟化點130℃，以下為「脫模PET」)上，以乾燥後之暫時樹脂組成物層的厚度成為40μm的方式在模塗佈機進行塗佈，以80℃～120℃(平均100℃)乾燥10分鐘而得到接著薄膜。將各接著薄膜(厚度40μm、200mm平方)使用分批式真空加壓層合機(Nikko Materials(股)製2階段積聚層合機、CVP700)，以暫時樹脂組成物層與固定PET薄膜之脫模劑處理面接觸的方式，於中央進行層合處理，而得到附支持體之樹脂薄片。層合處理係藉由進行30秒減壓將氣壓降為13hPa以下後，在100℃、壓力0.74MPa壓著30秒來實施。 　　[0193] 其次，以100℃之溫度條件，投入100℃之烤箱後30分鐘，其次以175℃之溫度條件，再轉移至175℃之烤箱後30分鐘使其熱硬化。然後，將基板於室溫環境下取出，從附支持體之樹脂薄片剝離脫模PET後，進而投入180℃之烤箱後，以60分鐘的硬化條件使其熱硬化。 　　[0194] 熱硬化後，剝離聚醯亞胺接著膠帶，將硬化物從玻璃布基材環氧樹脂兩面覆銅層合板去除，進而亦剝離PET薄膜(Lintec(股)製「501010」)，而得到薄片狀之硬化物。將所得之硬化物稱為「評估用硬化物」。 　　[0195] ＜彈性率、拉伸斷裂點強度的測定＞ 　　將評估用硬化物切出啞鈴狀1號形，而得到試驗片。將該試驗片使用Orientech公司製拉伸試驗機「RTC-1250A」，進行拉伸強度測定，求得在23℃之彈性率、拉伸斷裂點強度。測定係依據JIS K7127實施。進行3次此操作，將其平均值示於表。 　　[0196] ＜強度評估＞ 　　於8英寸矽晶圓上將暫時固定薄膜(Riva alpha No.31950E、日東電工(股)製 Thermal release tape)之形成用膠帶(forming tape)面以輥層合機，貼附在晶圓後，於Riva alpha之基底黏接劑(base adhesive)面上將矽晶片(DIE尺寸9×6mm、高度150um)以等間隔配置97個。 　　將於實施例及比較例製得之樹脂清漆，於以醇酸樹脂系脫模劑(Lintec(股)製「AL-5」)脫模處理之PET薄膜(Toray(股)製「Lumirror R80」、厚度38μm、軟化點130℃，以下為「脫模PET」)上，以乾燥後之暫時樹脂組成物層的厚度成為200μm的方式，在模塗佈機進行塗佈，於80℃～120℃(平均100℃)乾燥10分鐘而得到接著薄膜。將所得之接著薄膜使用分批式真空加壓層合機(Nikko Materials(股)製2階段積聚層合機、CVP700)，於上述附矽晶片之晶圓的矽晶單面進行層合來密封矽晶片。將該矽晶圓以150℃於1小時烤箱加熱後，將該矽晶圓於200℃之熱板上進行加熱，將矽晶圓與Riva alpha以形成用膠帶(forming tape)面剝離後，將與Riva alpha以基底黏接劑(base adhesive)面密封之樹脂的界面以手剝離，矽晶片嵌入樹脂而得到樹脂晶圓。將於上述製程中產生樹脂的欠缺、破裂者定為「×」，將未產生樹脂的欠缺、破裂者定為「○」。 　　[0197] ＜密著性評估＞ 　　於8英寸矽晶圓上準備1000Å蒸鍍氮化矽之晶圓，將於實施例及比較例製得之樹脂清漆於以醇酸樹脂系脫模劑(Lintec(股)製「AL-5」)脫模處理之PET薄膜(Toray(股)製「Lumirror R80」、厚度38μm、軟化點130℃，以下為「脫模PET」)上，以乾燥後之暫時樹脂組成物層的厚度成為20μm的方式在模塗佈機進行塗佈，於80℃～120℃(平均100℃)乾燥10分鐘而得到接著薄膜。將所得之接著薄膜使用分批式真空加壓層合機(Nikko Materials(股)製2階段積聚層合機、CVP700)，層合在上述晶圓。於180℃以1小時烤箱熱硬化後，依「JIS K5400-8.5(1990)」，將樹脂組成物層橫切(100方格)成1mm×1mm之網格，進行壓力鍋處理(121℃/濕度100%/100小時)後，進行膠帶剝離試驗，計算剝離樹脂之方格數量。將經剝離之方格為0～5個定為「○」，將6～19個定為「△」，將20個以上定為「×」。 　　[0198] ＜翹曲評估＞ 　　將於實施例及比較例製得之樹脂清漆，於以醇酸樹脂系脫模劑(Lintec(股)製「AL-5」)脫模處理之PET薄膜(Toray(股)製「Lumirror R80」、厚度38μm、軟化點130℃，以下為「脫模PET」)上，以乾燥後之暫時樹脂組成物層的厚度成為300μm的方式，在模塗佈機進行塗佈，於80℃～120℃(平均100℃)乾燥10分鐘而得到接著薄膜。將所得之接著薄膜使用分批式真空加壓層合機(Nikko Materials(股)製2階段積聚層合機、CVP700)，層合在12英寸矽晶圓(厚度775um)，作成以180℃加熱1h使樹脂硬化之附樹脂之晶圓。於平坦的面將樹脂側定為上放置附樹脂之晶圓，進行翹曲量測定。翹曲最大地點的翹曲量未滿2mm定為○，2mm以上定為×。 　　[0199] [實施例1] 　　混合雙酚A型環氧樹脂(三菱化學(股)製「828EL」、環氧當量約186)3份、彈性體A10份、苯氧基樹脂(三菱化學(股)製「YX7553BH30」、固形分30質量%之環己酮：甲基乙基酮(MEK)之1：1溶液)17份、雙環戊二烯型環氧樹脂(DIC公司製「HP-7200」、環氧當量258)3份、碳二亞胺化合物(日清紡Chemical(股)製「V-07」、碳二亞胺當量200、不揮發成分50質量%之甲苯溶液)4份、以胺基矽烷系偶合劑(信越化學工業公司製「KBM573」)表面處理之球狀二氧化矽A(平均粒徑1.7μm、比表面積(m2 /g)2.7um)115份、聚伸苯基醚寡聚物(三菱瓦斯化學(股)製「OPE-1000」、固形分約52%之甲苯溶液、酚性羥基當量：435g/eq)9.6份、阻燃劑(三光公司製「HCA-HQ」、10-(2,5-二羥基苯基)-10-氫-9-氧雜-10-磷菲-10-氧化物、平均粒徑2μm)1.5份、硬化促進劑(四國化成工業公司製、「2P4MZ-5M」、1-苄基-2-苯基咪唑、固形分5質量%之MEK溶液)3份，將環己酮100份以高速回轉混合器均一分散，以筒式過濾器(ROKITECHNO公司製「SHP050」)過濾，製得樹脂清漆。 　　[0200] [實施例2] 　　混合雙酚A型環氧樹脂(三菱化學(股)製「828EL」、環氧當量約186)3份、彈性體A10份、苯氧基樹脂(三菱化學(股)製「YX6954BH30」、固形分30質量%之環己酮：甲基乙基酮(MEK)之1：1溶液)17份、雙環戊二烯型環氧樹脂(DIC公司製「HP-7200」、環氧當量258)3份、碳二亞胺化合物(日清紡Chemical(股)製「V-07」、碳二亞胺當量200、不揮發成分50質量%之甲苯溶液)4份、以胺基矽烷系偶合劑(信越化學工業公司製「KBM573」)表面處理之球狀二氧化矽A(平均粒徑1.7μm、比表面積(m2 /g)2.7um)115份、含有三嗪骨架之酚酚醛清漆系硬化劑(DIC(股)製「LA-7054」、羥基當量約125、固形分60%之MEK溶液)3.3份、萘酚系硬化劑(新日鐵住金化學(股)製「SN-485」、羥基當量：215g/eq)之甲基乙基酮溶液(固形分：50%)6份、阻燃劑(三光公司製「HCA-HQ」、10-(2,5-二羥基苯基)-10-氫-9-氧雜-10-磷菲-10-氧化物、平均粒徑2μm)1.5份、硬化促進劑(四國化成工業公司製、「2P4MZ-5M」、1-苄基-2-苯基咪唑、固形分5質量%之MEK溶液)3份，將環己酮100份以高速回轉混合器均一分散，以筒式過濾器(ROKITECHNO公司製「SHP050」)過濾，製得樹脂清漆。 　　[0201] [實施例3] 　　混合雙酚A型環氧樹脂(三菱化學(股)製「828EL」、環氧當量約186)3份、彈性體A10份、苯氧基樹脂(三菱化學(股)製「YX6954BH30」、固形分30質量%之環己酮：甲基乙基酮(MEK)之1：1溶液)27份、雙環戊二烯型環氧樹脂(DIC公司製「HP-7200」、環氧當量258)3份、碳二亞胺化合物(日清紡Chemical(股)製「V-07」、碳二亞胺當量200、不揮發成分50質量%之甲苯溶液)4份、以胺基矽烷系偶合劑(信越化學工業公司製「KBM573」)表面處理之球狀二氧化矽A(平均粒徑1.7μm、比表面積(m2 /g)2.7um)115份、含有三嗪骨架之酚酚醛清漆系硬化劑(DIC(股)製「LA-7054」、羥基當量約125、固形分60%之MEK溶液)5份、阻燃劑(三光公司製「HCA-HQ」、10-(2,5-二羥基苯基)-10-氫-9-氧雜-10-磷菲-10-氧化物、平均粒徑2μm)1.5份、硬化促進劑(四國化成工業公司製、「2P4MZ-5M」、1-苄基-2-苯基咪唑、固形分5質量%之MEK溶液)3份，將環己酮100份以高速回轉混合器均一分散，以筒式過濾器(ROKITECHNO公司製「SHP050」)過濾，製得樹脂清漆。 　　[0202] [實施例4] 　　混合雙酚A型環氧樹脂(三菱化學(股)製「828EL」、環氧當量約186)3份、彈性體A10份、雙環戊二烯型環氧樹脂(DIC公司製「HP-7200」、環氧當量258)3份、雙酚F型苯氧基樹脂(新日鐵住金化學(股)製「FX-316」)5份、聚伸苯基醚寡聚物(三菱瓦斯化學(股)製「OPE-1000」固形分約52%之甲苯溶液、酚性羥基當量：435g/eq)9.6份、碳二亞胺化合物(日清紡Chemical(股)製「V-07」、碳二亞胺當量200、不揮發成分50質量%之甲苯溶液)4份、以胺基矽烷系偶合劑(信越化學工業公司製「KBM573」)表面處理之球狀二氧化矽A(平均粒徑1.7μm、比表面積(m2 /g)2.7um)115份、阻燃劑(三光公司製「HCA-HQ」、10-(2,5-二羥基苯基)-10-氫-9-氧雜-10-磷菲-10-氧化物、平均粒徑2μm)1.5份、硬化促進劑(四國化成工業公司製、「2P4MZ-5M」、1-苄基-2-苯基咪唑、固形分5質量%之MEK溶液)3份，將環己酮100份以高速回轉混合器均一分散，以筒式過濾器(ROKITECHNO公司製「SHP050」)過濾，製得樹脂清漆。 　　[0203] [實施例5] 　　混合雙酚A型環氧樹脂(三菱化學(股)製「828EL」、環氧當量約186)3份、彈性體A5份、含有柔軟性構造之苯氧基樹脂(三菱化學(股)製「YX7180BH40」、固形分40質量%之環己酮：MEK之1：1溶液)25份、雙環戊二烯型環氧樹脂(DIC公司製「HP-7200」、環氧當量258)3份、碳二亞胺化合物(日清紡Chemical(股)製「V-07」、碳二亞胺當量200、不揮發成分50質量%之甲苯溶液)4份、以胺基矽烷系偶合劑(信越化學工業公司製「KBM573」)表面處理之球狀二氧化矽A(平均粒徑1.7μm、比表面積(m2 /g)2.7um)120份、含有三嗪骨架之酚酚醛清漆系硬化劑(DIC(股)製「LA-7054」、羥基當量約125、固形分60%之MEK溶液)8.3份、阻燃劑(三光公司製「HCA-HQ」、10-(2,5-二羥基苯基)-10-氫-9-氧雜-10-磷菲-10-氧化物、平均粒徑2μm)1.5份、硬化促進劑(四國化成工業公司製、「2P4MZ-5M」、1-苄基-2-苯基咪唑、固形分5質量%之MEK溶液)3份，將環己酮100份以高速回轉混合器均一分散，以筒式過濾器(ROKITECHNO公司製「SHP050」)過濾，製得樹脂清漆。 　　[0204] [比較例1] 　　混合雙酚A型環氧樹脂(三菱化學(股)製「828EL」、環氧當量約186)3份、彈性體A15份、雙環戊二烯型環氧樹脂(DIC公司製「HP-7200」、環氧當量258)3份、碳二亞胺化合物(日清紡Chemical(股)製「V-07」、碳二亞胺當量200、不揮發成分50質量%之甲苯溶液)4份、以胺基矽烷系偶合劑(信越化學工業公司製「KBM573」)表面處理之球狀二氧化矽A(平均粒徑1.7μm、比表面積(m2 /g)2.7um)115份、聚伸苯基醚寡聚物(三菱瓦斯化學(股)製「OPE-1000」、固形分約52%之甲苯溶液、酚性羥基當量：435g/eq)9.6份、阻燃劑(三光公司製「HCA-HQ」、10-(2,5-二羥基苯基)-10-氫-9-氧雜-10-磷菲-10-氧化物、平均粒徑2μm)1.5份、硬化促進劑(四國化成工業公司製、「2P4MZ-5M」、1-苄基-2-苯基咪唑、固形分5質量%之MEK溶液)3份，將環己酮100份以高速回轉混合器均一分散，以筒式過濾器(ROKITECHNO公司製「SHP050」)過濾，製得樹脂清漆。 　　[0205] [比較例2] 　　混合雙酚A型環氧樹脂(三菱化學(股)製「828EL」、環氧當量約186)3份、雙環戊二烯型環氧樹脂(DIC公司製「HP-7200」、環氧當量258)3份、雙酚F型苯氧基樹脂(新日鐵住金化學(股)製「FX-316」)15份、含有三嗪骨架之酚酚醛清漆系硬化劑(DIC(股)製「LA-7054」、羥基當量約125、固形分60%之MEK溶液)8.3份、碳二亞胺化合物(日清紡Chemical(股)製「V-07」、碳二亞胺當量200、不揮發成分50質量%之甲苯溶液)4份、以胺基矽烷系偶合劑(信越化學工業公司製「KBM573」)表面處理之球狀二氧化矽A(平均粒徑1.7μm、比表面積(m2 /g)2.7um)115份、阻燃劑(三光公司製「HCA-HQ」、10-(2,5-二羥基苯基)-10-氫-9-氧雜-10-磷菲-10-氧化物、平均粒徑2μm)1.5份、硬化促進劑(四國化成工業公司製、「2P4MZ-5M」、1-苄基-2-苯基咪唑、固形分5質量%之MEK溶液)3份，將環己酮100份以高速回轉混合器均一分散，以筒式過濾器(ROKITECHNO公司製「SHP050」)過濾，製得樹脂清漆。 　　[0206] [比較例3] 　　混合雙酚A型環氧樹脂(三菱化學(股)製「828EL」、環氧當量約186)3份、彈性體A10份、苯氧基樹脂(三菱化學(股)製「YX7553BH30」、固形分30質量%之環己酮：甲基乙基酮(MEK)之1：1溶液)17份、雙環戊二烯型環氧樹脂(DIC公司製「HP-7200」、環氧當量258)3份、以胺基矽烷系偶合劑(信越化學工業公司製「KBM573」)表面處理之球狀二氧化矽A(平均粒徑1.7μm、比表面積(m2 /g)2.7um)115份、聚伸苯基醚寡聚物(三菱瓦斯化學(股)製「OPE-1000」、固形分約52%之甲苯溶液、酚性羥基當量：435g/eq)9.6份、阻燃劑(三光公司製「HCA-HQ」、10-(2,5-二羥基苯基)-10-氫-9-氧雜-10-磷菲-10-氧化物、平均粒徑2μm)1.5份、硬化促進劑(四國化成工業公司製、「2P4MZ-5M」、1-苄基-2-苯基咪唑、固形分5質量%之MEK溶液)3份，將環己酮100份以高速回轉混合器均一分散，以筒式過濾器(ROKITECHNO公司製「SHP050」)過濾，製得樹脂清漆。 　　[0207][0208] [製作例1] ＜扇出(Fan-out)型WLP用樹脂薄片的製作＞ 　　於聚對苯二甲酸乙二酯薄膜(厚度38μm)上，以乾燥後之樹脂組成物層的厚度成為200μm的方式，將實施例1記載之樹脂清漆在模塗佈機進行塗佈，於80～120℃(平均100℃)乾燥10分鐘而得到樹脂薄片。 　　[0209] 瞭解到將扇出(Fan-out)型WLP之密封層使用上述樹脂薄片製作時，作為扇出(Fan-out)型WLP，係具有充分之性能。 [製作例1] ＜層間絕緣用樹脂薄片的製作＞ 　　於聚對苯二甲酸乙二酯薄膜(厚度38μm)上，以乾燥後之樹脂組成物層的厚度成為200μm的方式，將實施例1記載之樹脂清漆在模塗佈機進行塗佈，於80～120℃(平均100℃)乾燥10分鐘而得到樹脂薄片。 　　[0210] 瞭解到將電路基板之層間絕緣層使用上述樹脂薄片製作時，本發明之電路基板具有充分之性能。In a suitable embodiment, the carbodiimide compound is preferably at least 50 mass%, more preferably at least 60 mass%, and even more preferably when the mass of all molecules of the carbodiimide compound is 100% by mass. It is 70 mass % or more, more preferably 80 mass % or more or 90 mass % or more, and contains the structural unit represented by formula (2). The carbodiimide compound can substantially become a structural unit represented by formula (2) by removing the terminal structure. The terminal structure of the carbodiimide compound is not particularly limited, but examples include an alkyl group, a cycloalkyl group, and an aryl group, and these may have a substituent. The alkyl group, cycloalkyl group, and aryl group used as the terminal structure may be the same as the alkyl group, cycloalkyl group, or aryl group described for the substituent that the group represented by X may have. Moreover, the substituent which the group used as a terminal structure may have may be the same as the substituent which the group represented by X may have. From the viewpoint of suppressing the generation of outgas when curing the resin composition, the weight average molecular weight of the carbodiimide compound is preferably 500 or more, more preferably 600 or more, and still more preferably 700. above, and even better is above 800, and the best is above 900 or above 1,000. Furthermore, from the viewpoint of obtaining good compatibility, the upper limit of the weight average molecular weight of the carbodiimide compound is preferably 5,000 or less, more preferably 4,500 or less, still more preferably 4,000 or less, and still more preferably 3,500 or less. , the best value is less than 3,000. The weight average molecular weight of the carbodiimide compound can be measured, for example, by the gel permeation chromatography (GPC) method (polystyrene equivalent). [0083] Furthermore, the carbodiimide compound is derived from its preparation method, and may contain an isocyanate group (-N=C=O) in the molecule. From the viewpoint of obtaining a resin composition showing good storage stability and thereby realizing an insulating layer showing desired characteristics, the content of isocyanate groups in the carbodiimide compound (also called "NCO content") , preferably 5 mass% or less, more preferably 4 mass% or less, still more preferably 3 mass% or less, still more preferably 2 mass% or less, particularly preferably 1 mass% or less or 0.5 mass% or less. [0084] Commercially available carbodiimide compounds can be used. Examples of commercially available carbodiimide compounds include Carbodilite (registered trademark) V-02B, V-03, V-04K, V-07 and V-09 manufactured by Nisshinbo Chemical Co., Ltd., and Rheinland Chemical Co., Ltd. Stavaxol (registered trademark) P, P400 and Hykagil 510. In combination with (a) an elastomer having a polycarbonate structure in the molecule, (b) epoxy resin, (c) inorganic filler and (d) phenoxy resin, strength and adhesion are obtained. From the viewpoint of forming an insulating layer with excellent properties in all properties, the content of the carbodiimide compound in the resin composition is preferably 1% by mass or more, more preferably 2% by mass or more, and still more preferably 3% by mass. or more, 4 mass% or more, or 5 mass% or more. Although the upper limit of the content of the carbodiimide compound is not particularly limited, it is preferably 30 mass% or less, more preferably 20 mass% or less, and still more preferably 15 mass% or less. [0086] <(f) Hardening agent> The resin composition may contain (f) hardening agent. The curing agent is not particularly limited as long as it has the function of curing the resin of component (b), etc., and examples thereof include phenol-based curing agents (including naphthol-based curing agents), active ester-based curing agents, benzox Azine-based hardeners and cyanate ester-based hardeners, etc. One type of hardening agent can be used alone, or two or more types can be used in combination. The component (d) is preferably at least one selected from the group consisting of phenol-based hardeners, active ester-based hardeners, and cyanate ester-based hardeners, more preferably one or more selected from the group consisting of phenol-based hardeners and active ester-based hardeners. One or more types, preferably a phenolic hardener. [0087] As the phenol-based hardener, from the viewpoint of heat resistance and water resistance, a phenol-based hardener having a novolak structure or a naphthol-based hardener having a novolak structure is preferred. Furthermore, from the viewpoint of adhesion to the wiring layer, a nitrogen-containing phenol-based curing agent is preferred, and a phenol-based curing agent containing a triazine skeleton is more preferred. Among them, a phenolic novolak hardener containing a triazine skeleton is preferred from the viewpoint of highly satisfying heat resistance, water resistance, and adhesion to the wiring layer. Specific examples of phenolic hardeners include "MEH-7700", "MEH-7810", and "MEH-7851" manufactured by Meiwa Kasei Co., Ltd., and "NHN" and "CBN" manufactured by Nippon Kayaku Co., Ltd. , "GPH", "SN170", "SN180", "SN190", "SN475", "SN485", "SN495V", "SN375", "SN395" manufactured by Nippon Steel & Sumitomo Metal Corporation, "TD" manufactured by DIC Corporation -2090", "LA-7052", "LA-7054", "LA-1356", "LA-3018-50P", "EXB-9500", "HPC-9500", "KA-1160", "KA -1163", "KA-1165", "GDP-6115L" and "GDP-6115H" manufactured by Kunei Chemical Co., Ltd., "OPE-1000" manufactured by Mitsubishi Gas Chemical Co., Ltd., etc. [0089] From the viewpoint of obtaining an insulating layer with excellent adhesion to the wiring layer, an active ester-based hardener is also preferred. Although the active ester-based hardener is not particularly limited, generally speaking, it is preferable to use phenol esters, thiophenol esters, N-hydroxyamine esters, esters of heterocyclic hydroxyl compounds, etc. in one molecule. Compounds with two or more highly reactive ester groups. The active ester hardener is preferably obtained by the condensation reaction of a carboxylic acid compound and/or a sulfurcarboxylic acid compound and a hydroxyl compound and/or a thiol compound. Especially from the viewpoint of improving heat resistance, an active ester hardener obtained from a carboxylic acid compound and a hydroxy compound is preferred, and an active ester type hardener obtained from a carboxylic acid compound, a phenol compound and/or a naphthol compound is more preferred. Hardener. Examples of carboxylic acid compounds include benzoic acid, acetic acid, succinic acid, maleic acid, itaconic acid, phthalic acid, isophthalic acid, terephthalic acid, pyromellitic acid, and the like. Examples of the phenol compound or naphthol compound include hydroquinone, resorcin, bisphenol A, bisphenol F, bisphenol S, phenolphthalein, methylated bisphenol A, and methylated bisphenol. F. Methylated bisphenol S, phenol, o-cresol, m-cresol, p-cresol, catechol, α-naphthol, β-naphthol, 1,5-dihydroxynaphthalene, 1, 6-dihydroxynaphthalene, 2,6-dihydroxynaphthalene, dihydroxybenzophenone, trihydroxybenzophenone, tetrahydroxybenzophenone, phloroglucinol, phloroglucinol, dicyclopentadiene-type Phenolic compounds, phenolic novolac, etc. Here, the "dicyclopentadiene-type diphenol compound" refers to a diphenol compound obtained by condensing two molecules of phenol with one molecule of dicyclopentadiene. Specifically, preferred are an active ester compound containing a dicyclopentadiene-type diphenol structure, an active ester compound containing a naphthalene structure, an active ester compound containing an acetate of phenolic novolac, and an active ester compound containing a phenolic novolak. Among the active ester compounds of benzoyl compounds, more preferred are active ester compounds containing a naphthalene structure and active ester compounds containing a dicyclopentadiene-type diphenol structure. The "dicyclopentadiene-type diphenol structure" refers to a divalent structural unit composed of a phenylene group-dicyclopentylene group-phenylene group. As commercially available active ester hardeners, examples of active ester compounds containing a dicyclopentadiene-type diphenol structure include "EXB9451", "EXB9460", "EXB9460S", and "HPC-8000-65T" , "HPC-8000H-65TM", "EXB-8000L-65TM" (manufactured by DIC Corporation), as the active ester compound containing a naphthalene structure, "EXB9416-70BK" (manufactured by DIC Corporation), as an active ester compound containing phenolic novolac Examples of the active ester compound of an acetyl compound include "DC808" (manufactured by Mitsubishi Chemical Corporation). Examples of the active ester compound of a benzoyl compound including phenol novolak include "YLH1026" (manufactured by Mitsubishi Chemical Corporation). Examples of the active ester hardener for the acetyl compound of the novolac include "DC808" (manufactured by Mitsubishi Chemical Corporation). Examples of the active ester hardener for the benzyl compound of the phenol novolak include "YLH1026" (manufactured by Mitsubishi Chemical Corporation). Corporation), "YLH1030" (manufactured by Mitsubishi Chemical Corporation), "YLH1048" (manufactured by Mitsubishi Chemical Corporation), etc. [0092] Specific examples of the benzoxazine-based hardener include "HFB2006M" manufactured by Showa Polymer Co., Ltd. and "Pd" and "Fa" manufactured by Shikoku Chemical Industry Co., Ltd. As the cyanate ester-based hardener, for example, bisphenol A dicyanate, polyphenol cyanate, oligo(3-methylene-1,5-phenylene cyanate), 4 ,4'-methylene bis(2,6-dimethylphenyl cyanate), 4,4'-ethylene diphenyl dicyanate, hexafluorobisphenol A dicyanate, 2 ,2-bis(4-cyanate)phenylpropane, 1,1-bis(4-cyanatephenylmethane), bis(4-cyanate-3,5-dimethylphenyl)methane , 1,3-bis(4-cyanatephenyl-1-(methylethylene))benzene, bis(4-cyanatephenyl)sulfide and bis(4-cyanatephenyl) Bifunctional cyanate ester resins such as ethers, multifunctional cyanate ester resins derived from phenol novolac and cresol novolak, etc., prepolymers in which part of these cyanate ester resins are triazinized, etc. Specific examples of cyanate ester-based hardeners include "PT30" and "PT60" manufactured by Lonza Japan (both are phenol novolac-type polyfunctional cyanate ester resins), "BA230", and "BA230S75" ( A part or all of the bisphenol A dicyanate becomes a triazinized terpolymer (prepolymer), etc. When the resin composition contains component (d), the content of the hardener in the resin composition is not particularly limited, but it is preferably 10 mass% or less, more preferably 8 mass% or less, and still more preferably It is 5 mass% or less. In addition, the lower limit is not particularly limited, but is preferably 1 mass% or more. [0095] <(g) Hardening accelerator> The resin composition may contain (g) a hardening accelerator. Examples of the hardening accelerator include phosphorus-based hardening accelerators, amine-based hardening accelerators, imidazole-based hardening accelerators, guanidine-based hardening accelerators, metal-based hardening accelerators, etc. Preferred are phosphorus-based hardening accelerators and amine-based hardening accelerators. Hardening accelerator, imidazole type hardening accelerator, metal type hardening accelerator, more preferably amine type hardening accelerator, imidazole type hardening accelerator, metal type hardening accelerator. One type of hardening accelerator may be used alone, or two or more types may be used in combination. Examples of the phosphorus-based hardening accelerator include triphenylphosphine, phosphonium borate compound, tetraphenylphosphonium tetraphenylborate, n-butylphosphonium tetraphenylborate, and tetrabutyl Phosphonium decanoate, (4-methylphenyl)triphenylphosphonium thiocyanate, tetraphenylphosphonium thiocyanate, butyltriphenylphosphonium thiocyanate, etc., preferably triphenylphosphine , Tetrabutylphosphonium decanoate. Examples of the amine-based hardening accelerator include trialkylamines such as triethylamine and tributylamine, 4-dimethylaminopyridine, benzyldimethylamine, 2,4,6 , -Shen(dimethylaminomethyl)phenol, 1,8-diazabicyclo(5,4,0)-undecene, etc., preferably 4-dimethylaminopyridine, 1 ,8-diazabicyclo(5,4,0)-undecene. Examples of imidazole-based hardening accelerators include 2-methylimidazole, 2-undecylimidazole, 2-heptadecylimidazole, 1,2-dimethylimidazole, and 2-ethyl-4 -Methylimidazole, 1,2-dimethylimidazole, 2-ethyl-4-methylimidazole, 2-phenylimidazole, 2-phenyl-4-methylimidazole, 1-benzyl-2-methyl 1-Benzyl-2-phenylimidazole, 1-cyanoethyl-2-methylimidazole, 1-cyanoethyl-2-undecylimidazole, 1-cyanoethyl-2-ethyl -4-methylimidazole, 1-cyanoethyl-2-phenylimidazole, 1-cyanoethyl-2-undecylimidazolium trimellitate, 1-cyanoethyl-2-phenylimidazole Onium trimellitate, 2,4-diamino-6-[2'-methylimidazolyl-(1')]-ethyl-s-triazine, 2,4-diamino-6- [2'-Undecyl imidazolyl-(1')]-ethyl-s-triazine, 2,4-diamino-6-[2'-ethyl-4'-methylimidazolyl- (1')]-ethyl-s-triazine, 2,4-diamino-6-[2'-methylimidazolyl-(1')]-ethyl-s-triazineisocyanuric acid Adduct, 2-phenylimidazole isocyanuric acid adduct, 2-phenyl-4,5-dihydroxymethylimidazole, 2-phenyl-4-methyl-5-hydroxymethylimidazole, 2 ,3-dihydro-1H-pyrrole[1,2-a]benzimidazole, 1-dodecyl-2-methyl-3-benzylimidazolium chloride, 2-methylimidazolium, 2- Among imidazole compounds such as phenylimidazoline and adducts of imidazole compounds and epoxy resins, 2-ethyl-4-methylimidazole and 1-benzyl-2-phenylimidazole are preferred. [0099] As the imidazole-based hardening accelerator, commercially available products can be used, and examples include "P200-H50" manufactured by Mitsubishi Chemical Corporation. Examples of the guanidine-based hardening accelerator include dicyandiamide, 1-methylguanidine, 1-ethylguanidine, 1-cyclohexylguanidine, 1-phenylguanidine, and 1-(o-tolyl)guanidine , dimethylguanidine, diphenylguanidine, trimethylguanidine, tetramethylguanidine, pentamethylguanidine, 1,5,7-triazabicyclo[4.4.0]dec-5-ene, 7- Methyl-1,5,7-triazabicyclo[4.4.0]dec-5-ene, 1-methylbiguanide, 1-ethylbiguanide, 1-n-butylbiguanide, 1-n-deca Octalkyl biguanide, 1,1-dimethyl biguanide, 1,1-diethyl biguanide, 1-cyclohexyl biguanide, 1-allyl biguanide, 1-phenyl biguanide, 1-(o-tolyl) Biguanide, etc., preferably dicyandiamide and 1,5,7-triazabicyclo[4.4.0]dec-5-ene. Examples of metal-based hardening accelerators include organic metal complexes or organic metal salts of metals such as cobalt, copper, zinc, iron, nickel, manganese, and tin. Specific examples of the organic metal complex include organic cobalt complexes such as cobalt (II) acetyl pyruvate and cobalt (III) acetyl pyruvate, and copper (II) acetyl pyruvate. Organic copper complexes, organic zinc complexes such as zinc (II) acetyl pyruvate, etc., organic iron complexes such as iron (III) acetyl pyruvate, nickel (II) acetyl pyruvate, etc. Organic nickel complexes, organic manganese complexes of manganese (II) acetyl pyruvate, etc. Examples of organic metal salts include zinc octoate, tin octoate, zinc naphthenate, cobalt naphthenate, tin stearate, zinc stearate, and the like. When the resin composition contains the component (g), the content of the hardening accelerator in the resin composition is not particularly limited, but it is preferably a combination of the component (b) and the non-volatile component of the hardener (f). When the total amount is 100% by mass, it is 0.01% by mass to 3% by mass. [0103] <(h) Flame retardant> The resin composition may contain (h) a flame retardant. Examples of the flame retardant include organophosphorus flame retardants, phosphorus compounds containing organic nitrogen, nitrogen compounds, silicone flame retardants, metal hydroxides, and the like. One kind of flame retardant can be used alone, or two or more kinds can be used in combination. [0104] As the flame retardant, commercially available products can be used, for example, "HCA-HQ" manufactured by Sanko Co., Ltd., etc. can be used. [0105] When the resin composition contains a flame retardant, although the content of the flame retardant is not particularly limited, it is preferably 0.5 mass% to 20 mass%, more preferably 0.5 mass% to 15 mass%. More preferably, it is 0.5 mass % - 10 mass %. <(i) Optional additives> The resin composition may further contain other additives if necessary. Examples of the other additives include organic metal compounds such as organic copper compounds, organic zinc compounds, and organic cobalt compounds, and binders, Resin additives such as tackifiers, defoaming agents, leveling agents, adhesion-imparting agents and colorants. [0107] <Physical Properties of the Resin Composition> The cured product obtained by thermally curing the resin composition of the present invention at 180° C. for 1 hour has an elastic modulus of 8 GPa or more at 23° C. The upper limit is not particularly limited, but may be, for example, 18 GPa or less, 15 GPa or less, 13 GPa or less, or 11 GPa or less. By setting the elastic modulus to 8 GPa or more, the occurrence of warpage of the hardened material can be suppressed. The elastic modulus mentioned above can be measured according to the method described in <Measurement of elastic modulus and tensile breaking point strength> mentioned later. [0108] The cured product obtained by thermally hardening the resin composition of the present invention at 180° C. for 1 hour has a breaking point strength (MPa) of 55 or more at 23° C., preferably 60 or more, and more preferably 65 or more. The upper limit is not particularly limited, but may be 100 or less, for example. The above-mentioned breaking point strength can be measured according to the method described in <Measurement of Elastic Modulus and Tensile Breaking Point Strength> described later. [0109] The resin composition of the present invention can provide a cured product (insulating layer) that suppresses warpage and has excellent strength and adhesion. Furthermore, since it contains component (b), it has good compatibility with component (a). Accordingly, the resin composition of the present invention can be suitably used as a resin composition for forming an insulating layer of a semiconductor chip package (a resin composition for an insulating layer of a semiconductor chip package), or for forming a circuit board (including a printed wiring board). It can be used as a resin composition for an insulating layer (a resin composition for an insulating layer of a circuit board). It can also be further suitably used as a resin composition for forming an interlayer insulating layer (formed by plating) for forming a conductor layer by plating. The resin composition is used as the interlayer insulating layer of the circuit board in the conductor layer. It can also be suitably used as a resin composition for sealing semiconductor wafers (resin composition for semiconductor wafer sealing) and a resin composition for forming wiring on semiconductor wafers (resin composition for semiconductor wafer wiring formation). [Resin sheet] The resin sheet of the present invention includes a support and a resin composition layer. The resin composition layer is bonded to the support. The resin composition layer is composed of the resin composition of the present invention. From the viewpoint of thinning, the thickness of the resin composition layer is preferably 200 μm or less, more preferably 150 μm or less, still more preferably 100 μm or less, 80 μm or less, 60 μm or less, 50 μm or less, or 40 μm or less. Although the lower limit of the thickness of the resin composition layer is not particularly limited, it may generally be 1 μm or more, 5 μm or more, 10 μm or more, or the like. [0112] As the support, for example, a film, a metal foil, and a release paper made of a plastic material can be cited, and preferably a film or a metal foil made of a plastic material. When a film made of a plastic material is used as the support, examples of the plastic material include polyethylene terephthalate (hereinafter sometimes referred to as "PET"), polyethylene naphthalate Polyesters such as diester (hereinafter sometimes abbreviated as "PEN"), polycarbonate (hereinafter sometimes abbreviated as "PC"), acrylic and cyclic polyolefins such as polymethyl methacrylate (PMMA) , triacetyl cellulose (TAC), polyether sulfide (PES), polyetherketone, polyimide, etc. Among them, polyethylene terephthalate and polyethylene naphthalate are preferred, and cheap polyethylene terephthalate is particularly preferred. [0114] When a metal foil is used as the support, examples of the metal foil include copper foil, aluminum foil, etc., and copper foil is preferred. As the copper foil, a foil composed of copper as a single metal may be used, or a foil composed of an alloy of copper and other metals (such as tin, chromium, silver, magnesium, nickel, zirconium, silicon, titanium, etc.) may be used. [0115] The surface of the support that is bonded to the resin composition layer may be frosted or corona treated. [0116] Furthermore, as the support, a support with a release layer in which the surface to be joined to the resin composition layer has a release layer can be used. Examples of the release agent used for the release layer of the support with the release layer include one selected from the group consisting of alkyd resin, polyolefin resin, urethane resin, and silicone resin. The above release agent. As the support with a release layer, commercially available products can be used. For example, "SK-1" and "AL-5" made by Lintec Corporation, which are PET films having a release layer containing an alkyd resin release agent as a main component, can be used. ", "AL-7", "Lumirror T60" made by Toray Co., Ltd., "Purex" made by Teijin Co., Ltd., "Unipiel" made by Unitika Co., Ltd., etc. [0117] Although the thickness of the support is not particularly limited, it is preferably in the range of 5 μm to 75 μm, and more preferably in the range of 10 μm to 60 μm. Furthermore, when using a support with a release layer, it is preferable that the thickness of the entire support with a release layer is within the above range. [0118] The resin sheet can be produced, for example, by preparing a resin varnish that dissolves the resin composition in an organic solvent, applying the resin varnish on a support using a die coater, and drying the resin varnish to form a resin composition layer. Examples of organic solvents include ketones such as acetone, methyl ethyl ketone (MEK), and cyclohexanone, ethyl acetate, butyl acetate, cellosolve acetate, and propylene glycol monomethyl ether ethyl. Acetate esters such as acid esters and carbitol acetate, carbitols such as cellosolve and butyl carbitol, aromatic hydrocarbons such as toluene and xylene, dimethylformamide, dimethyl formamide, etc. Amide solvents such as methylacetamide (DMAc) and N-methylpyrrolidone. One type of organic solvent may be used alone, or two or more types may be used in combination. [0120] Drying can be carried out by well-known methods such as heating and blowing hot air. Although the drying conditions are not particularly limited, the resin composition layer is dried so that the content of the organic solvent is 10% by mass or less, preferably 5% by mass or less. Although it differs depending on the boiling point of the organic solvent in the resin varnish, for example, when using a resin varnish containing 30% to 60% by mass of an organic solvent, it can be dried at 50°C to 150°C for 3 to 10 minutes. A resin composition layer is formed. [0121] On the surface of the resin sheet that is not bonded to the support of the resin composition layer (that is, the surface opposite to the support), a protective film according to the support may be further laminated. The thickness of the protective film is not particularly limited, but is, for example, 1 μm to 40 μm. By laminating a protective film, it is possible to prevent dust and the like from adhering to or scratching the surface of the resin composition layer. Resin sheets can be rolled into rolls and stored. When the resin sheet has a protective film, it can be used by peeling off the protective film. [0122] Instead of the resin sheet of the present invention, a prepreg formed by impregnating a sheet-like fiber base material with the resin composition of the present invention can be used. [0123] The sheet-like fiber base material used for the prepreg is not particularly limited, and those commonly used as base materials for prepregs such as glass cloth, aramid nonwoven fabric, liquid crystal polymer nonwoven fabric, etc. can be used. From the viewpoint of thinning, the thickness of the sheet-like fiber base material is preferably 900 μm or less. The lower limit of the thickness of the sheet-like fiber base material is not particularly limited, but can usually be 1 μm or more. [0124] Prepregs can be manufactured by known methods such as hot melt method and solvent method. [0125] The thickness of the prepreg may be in the same range as the resin composition layer in the above-mentioned resin sheet. [0126] The resin sheet of the present invention can be suitably used to form an insulating layer (insulating resin sheet for semiconductor chip packages) in the production of semiconductor chip packages. For example, the resin sheet of the present invention can be suitably used for forming an insulating layer of a circuit board (a resin sheet for an insulating layer of a circuit board), and can further be suitably used for forming an interlayer of a conductor layer formed by plating. Insulating layer (for the interlayer insulating layer of the circuit board where the conductor layer is formed by plating). Examples of packages using such a substrate include FC-CSP, MIS-BGA package, and ETS-BGA package. Furthermore, the resin sheet of the present invention can be suitably used for sealing a semiconductor wafer (resin sheet for semiconductor wafer sealing) or for forming wiring on a semiconductor wafer (resin sheet for semiconductor wafer wiring formation). For example, it can be suitably used for a fan. Fan-out type WLP (Wafer Level Package), Fan-in type WLP, fan-out type PLP (Panel Level Package), Fan-in type PLP, etc. In addition, MUF (Molding Under Filling) material used after connecting the semiconductor chip to the substrate can also be suitably used. The resin sheet of the present invention can be suitably used in a wide range of applications requiring high insulation reliability, such as the insulating layer used to form circuit boards such as printed wiring boards. [Circuit substrate] The circuit substrate of the present invention includes an insulating layer formed of a cured product of the resin composition of the present invention. The manufacturing method of the circuit board of the present invention may include: (1) the step of preparing a base material having a base material and a wiring layer with a wiring layer provided on at least one side of the base material; (2) applying the present invention The resin sheet is laminated on the base material with the wiring layer in such a manner that the wiring layer is embedded in the resin composition layer, and is thermally cured to form an insulating layer. (3) The step of connecting the wiring layers between layers. In addition, the manufacturing method of the circuit substrate may include (4) the step of removing the base material. [0128] Step (3) If the wiring layer can be connected between layers, although it is not particularly limited, it is preferably the step of forming a through hole in the insulating layer, forming the wiring layer, and grinding or grinding the insulating layer to expose the wiring layer. At least any one of the steps. [0129] <Step (1)> Step (1) is a step of preparing a base material having a base material and a wiring layer with a wiring layer provided on at least one side of the base material. For example, a base material with a wiring layer has a first metal layer and a second metal layer that are part of the base material on both sides of the base material, and the second metal layer has a wiring layer on the surface opposite to the surface on the base material side. Specifically, a dry film (photosensitive resist film) is laminated on a base material, and exposed and developed using a photomask to form a patterned dry film. The developed patterned dry film is used as a plating mask. After the wiring layer is formed by electrolytic plating, the patterned dry film is peeled off. Alternatively, the first metal layer and the second metal layer may not be provided. Examples of the base material include glass epoxy substrate, metal substrate (stainless steel or cold-rolled steel plate (SPCC), etc.), polyester substrate, polyimide substrate, BT resin substrate, and thermosetting polyphenylene. Substrates such as ether substrates can form a metal layer such as copper foil on the surface of the substrate. In addition, metal layers such as a peelable first metal layer and a second metal layer (such as Mitsui Metal's ultra-thin copper foil with carrier copper foil, trade name "Micro Thin") can be formed on the surface. [0131] The dry film is not particularly limited as long as it is a photosensitive dry film composed of a photoresist composition. For example, dry films of novolac resin, acrylic resin, etc. can be used. Commercially available dry films can be used. [0132] The lamination conditions of the base material and the dry film are the same as the conditions for laminating the resin sheet embedded in the wiring layer in step (2) described below, and the preferred ranges are also the same. [0133] After the dry film is laminated on the base material, in order to form the desired pattern on the dry film, a photomask is used to expose and develop under predetermined conditions. [0134] Although the line (circuit width)/space (width between circuits) ratio of the wiring layer is not particularly limited, it is preferably 20/20 μm or less (that is, the pitch is 40 μm or less) and 0.5/0.5 μm or more. The pitch system does not need to be uniform throughout the wiring layer. The minimum pitch of the wiring layer can be 40 μm or less. [0135] After the pattern of the dry film is formed, a wiring layer is formed, and the dry film is peeled off. Here, the wiring layer can be formed by a plating method using a dry film formed with a desired pattern as a plating mask. [0136] The conductor material used for the wiring layer is not particularly limited. In a suitable embodiment, the wiring layer includes at least one selected from the group consisting of gold, platinum, palladium, silver, copper, aluminum, cobalt, chromium, zinc, nickel, titanium, tungsten, iron, tin and indium. The above metals. The wiring layer may be a single metal layer or an alloy layer. Examples of the alloy layer include alloys of two or more metals selected from the above groups (such as nickel and chromium alloys, copper and nickel alloys, and copper and titanium). alloy). [0137] The thickness of the wiring layer depends on the design of the desired wiring board, but is preferably 3 μm to 35 μm. In step (3), when the interlayer connecting wiring layer is exposed by grinding or grinding the insulating layer to expose the wiring layer, it is preferable that the thickness of the wiring between layers is different from that of the unconnected wiring. The thickness of the wiring layer can be adjusted by repeating the pattern formation described above. Among the wiring layers, the thickness of the wiring layer (conductive pillar) having the thickest thickness depends on the design of the desired wiring board, but is preferably 100 μm or less and 2 μm or more. In addition, the interconnection wiring between layers can be formed into a convex shape. [0138] After forming the wiring layer, the dry film is peeled off. The dry film can be peeled off using an alkaline peeling liquid such as sodium hydroxide solution. If necessary, the unnecessary wiring pattern can be removed by etching, etc., and the desired wiring pattern can also be formed. The spacing of the formed wiring layers is as described above. <Step (2)> Step (2) is to laminate the resin sheet of the present invention on the base material with the wiring layer in such a manner that the wiring layer is embedded in the resin composition layer, and then thermally harden it to form an insulating layer. steps. Specifically, the wiring layer of the substrate with the wiring layer obtained in the aforementioned step (1) is laminated in a manner that the resin composition layer of the resin sheet is embedded, so that the resin composition layer of the resin sheet is heated Hardens to form an insulating layer. [0140] Lamination of the wiring layer and the resin sheet can be performed by, for example, heating and pressing the resin sheet onto the wiring layer from the support side after removing the protective film of the resin sheet. Examples of a member for heat-pressing a resin sheet onto a wiring layer (hereinafter also referred to as a "heat-pressing member") include a heated metal plate (SUS mirror plate, etc.) or a metal roller (SUS roller). Furthermore, it is preferable not to directly press the heating pressing member onto the resin sheet, but to press the surface of the wiring layer through an elastic material such as heat-resistant rubber so that the resin sheet fully follows the unevenness on the surface of the wiring layer. [0141] The lamination of the wiring layer and the resin sheet can be carried out by vacuum lamination after removing the protective film of the resin sheet. In the vacuum lamination method, the heating and pressing temperature is preferably in the range of 60°C to 160°C, the heating and pressing pressure is preferably in the range of 0.098MPa to 1.77MPa, and the heating and pressing time is preferably in the range of 20 seconds to 400 seconds. Lamination is preferably carried out under reduced pressure conditions of 13 hPa or less. [0142] After lamination, the laminated resin sheets can be smoothed under normal pressure (atmospheric pressure), for example, by pressing a heated pressing member from the support side. The pressing conditions for the smoothing treatment can be the same as the heat pressing conditions for the above-mentioned lamination. Alternatively, lamination and smoothing can be performed continuously using the above-mentioned commercially available vacuum laminator. [0143] After the resin composition layer is laminated on the base material with the wiring layer in such a manner that the wiring layer is embedded, the resin composition layer is thermally cured to form an insulating layer. For example, although the thermal curing conditions of the resin composition layer vary depending on the type of the resin composition, the curing temperature can be in the range of 120°C to 240°C, and the curing time can be in the range of 5 minutes to 120 minutes. Before thermally curing the resin composition layer, the resin composition layer can be preheated at a temperature lower than the curing temperature. [0144] The support of the resin sheet can be laminated with the resin sheet on the base material with the wiring layer, and then peeled off after being thermally cured, or the support can be peeled off before laminating the resin sheet on the base material with the wiring layer. In addition, the support may be peeled off before the roughening step described below. [0145] <Step (3)> Step (3) is a step of connecting the wiring layers between layers. Specifically, it is a step of forming a through hole in the insulating layer, forming a conductor layer, and connecting the wiring layer between the layers. Or grinding or grinding the insulating layer to expose the wiring layer to connect the wiring layer between layers. [0146] When adopting the steps of forming a through hole in the insulating layer, forming a conductor layer, and connecting the wiring layer between layers, the formation of the through hole is not particularly limited. Although laser irradiation, etching, mechanical drilling, etc. can be used, the formation of the through hole is not limited. Preferably, it is carried out by laser irradiation. This laser irradiation can be performed using any suitable laser processing machine such as carbonic acid gas laser, YAG laser, excimer laser, etc. as the light source. Specifically, laser irradiation is performed from the surface side of the support body of the resin sheet to penetrate the support body and the insulating layer to expose the wiring layer and form a through hole. [0147] The conditions of laser irradiation are not particularly limited, and laser irradiation can be implemented by any suitable steps according to the conventional method according to the selected means. [0148] Although the shape of the through hole, that is, the shape of the opening outline when viewed in the extending direction, is not particularly limited, it is generally circular (substantially circular). [0149] After the through hole is formed, the sludge removal step in the through hole can be performed, that is, the sludge removal step can be performed. When the conductor layer described below is formed by a plating step, for example, a wet desmear process can be performed on the through hole. When the conductor layer is formed by a sputtering step, for example, Dry slag removal step such as plasma treatment step. In addition, the desmear removal step may also be combined with the roughening treatment step. [0150] Before forming the conductor layer, the through holes and the insulating layer can be roughened. The roughening process can be carried out in generally known procedures and conditions. Examples of dry roughening treatment include plasma treatment, and examples of wet roughening treatment include swelling treatment with a swelling liquid, roughening treatment with an oxidizing agent, and roughening treatment with an oxidizing agent in this order. Method of neutralizing the neutralizing solution. [0151] After forming the via hole, a conductor layer is formed. The conductor material constituting the conductor layer is not particularly limited. The conductor layer can be formed by any suitable method known in the art such as plating, sputtering, and evaporation. The conductor layer is preferably formed by plating. In a suitable embodiment, for example, a conductor layer having a desired wiring pattern can be formed on the surface of the insulating layer by plating using a conventionally known technique such as a semi-additive method or a fully additive method. In addition, when the support of the resin sheet is a metal foil, a conductor layer having a desired wiring pattern can be formed by conventionally known techniques such as the subtractive method. The conductor layer can be a single-layer structure, a single metal layer composed of different types of metals or alloys, or a multi-layer structure in which two or more alloy layers are laminated. [0152] Specifically, a plating seed layer is formed on the surface of the insulating layer by electroless plating. Next, on the formed plating seed crystal layer, a mask pattern is formed to expose a part of the plating seed crystal layer corresponding to the desired wiring pattern. An electrolytic plating layer is formed on the exposed plating seed layer by electrolytic plating. At this time, at the same time as the electrolytic plating layer is formed, the via hole can be embedded by electrolytic plating to form a filled via. After the electrolytic plating layer is formed, the mask pattern is removed. Then, the unnecessary plating seed layer is removed by etching, etc., and a conductor layer having a desired wiring pattern can be formed. Furthermore, when forming the conductor layer, the dry film used to form the mask pattern is the same as the dry film mentioned above. [0153] The conductive layer is not only linear wiring, but may also include, for example, electrode pads (Lands) that can carry external terminals. In addition, the conductor layer may be composed only of electrode pads. [0154] In addition, the conductor layer can be formed by forming a plating seed layer, forming an electrolytic plating layer and filling holes without using a mask pattern, and then patterning by etching. [0155] When the step of grinding or grinding the insulating layer to expose the wiring layer and connecting the wiring layers between layers is used, the wiring layer can be exposed as a grinding method or grinding method for the insulating layer. If the grinding or grinding surface is horizontal, then It is not particularly limited, and conventionally known polishing methods or grinding methods can be applied. Examples include chemical mechanical polishing methods using chemical mechanical polishing devices, mechanical polishing methods such as buffing, and surface grinding methods using grinding stone rotation. wait. In the same steps as forming through holes in the insulating layer to form the conductor layer and connecting the wiring layers between layers, the steps of removing slag and roughening can be performed to form the conductor layer. In addition, it is not necessary to expose the entire wiring layer, and a part of the wiring layer may be exposed. [0156] <Step (4)> The manufacturing method of the circuit substrate is a step of removing the base material to form the circuit substrate of the present invention. The method of removing the base material is not particularly limited. In a suitable embodiment, the base material is peeled off from the circuit board at the interface between the first and second metal layers, and the second metal layer is etched away using, for example, a copper chloride aqueous solution. If necessary, the conductor layer can be peeled off the base material while being protected by the protective film. [Semiconductor Chip Package] A first aspect of the semiconductor chip package of the present invention is a semiconductor chip package in which a semiconductor chip is mounted on the circuit substrate of the present invention. By bonding semiconductor wafers with the above-mentioned circuit substrate of the present invention, a semiconductor wafer package can be produced. [0158] As long as the terminal electrode of the semiconductor chip is connected to the circuit wiring conductor of the circuit board, the bonding conditions are not particularly limited, and well-known conditions used in flip-chip mounting of the semiconductor chip can be used. In addition, the semiconductor chip and the circuit board can be bonded through an insulating adhesive. [0159] A suitable embodiment is to press the semiconductor wafer onto the circuit substrate. As the pressing conditions, for example, the pressing temperature can be in the range of 120°C to 240°C, and the pressing time can be in the range of 1 second to 60 seconds. [0160] Another suitable embodiment is to reflow the semiconductor wafer to the circuit board for bonding. The reflow conditions may be in the range of 120°C to 300°C, for example. [0161] After the semiconductor wafer is bonded to the circuit substrate, for example, the semiconductor wafer can also be filled with a mold underfill material to obtain a semiconductor wafer package. The filling method of the mold bottom filling material can be carried out by well-known methods. The resin composition or resin sheet of the present invention can also be used as a mold bottom filling material. [0162] The second aspect of the semiconductor chip package of the present invention is a semiconductor chip package (fan-out (Fan-out) type WLP). The manufacturing method of the semiconductor chip package includes: (A) the step of laminating the temporary fixing film on the base material, (B) the step of temporarily fixing the semiconductor chip on the temporary fixing film, (C) the resin of the resin sheet of the present invention The step of laminating the composition layer on the semiconductor wafer, or applying the resin composition of the present invention on the semiconductor wafer and thermally hardening it to form a sealing layer, (D) peeling the base material and the temporary fixing film from the semiconductor wafer (E) The step of forming a rewiring forming layer (insulating layer) on the surface of the semiconductor chip where the base material and the temporary fixing film are peeled off, (F) Forming the conductor layer (rewiring) on the rewiring forming layer (insulating layer) layer) and (G) the step of forming a solder resist layer on the conductor layer. In addition, the manufacturing method of the semiconductor chip package may include the step of (H) cutting a plurality of semiconductor chip packages into individual semiconductor chip packages and performing individualization. [0163] <Step (A)> Step (A) is a step of laminating a temporarily fixed film on a base material. The lamination conditions of the base material and the temporary fixing film are the same as the lamination conditions of the wiring layer and the resin sheet in step (2) of the circuit board manufacturing method, and the preferred range is also the same. [0164] The material used for the base material is not particularly limited. Examples of substrates include silicon wafers; glass wafers; glass substrates; metal substrates such as copper, titanium, stainless steel, and cold-rolled steel plates (SPCC); thermally hardened substrates in which glass fibers are impregnated with epoxy resin, etc. (For example, FR-4 substrate); substrates made of bismaleimide triazine resin (BT resin), etc. [0165] The material of the temporarily fixing film is not particularly limited as long as it can be peeled off from the semiconductor wafer in the step (D) described below while temporarily fixing the semiconductor wafer. Commercially available products can be used to temporarily fix the film. Examples of commercially available products include Riva alpha manufactured by Nitto Denko Co., Ltd. and the like. [0166] <Step (B)> Step (B) is a step of temporarily fixing the semiconductor wafer on the temporary fixing film. The semiconductor chip can be temporarily fixed using a well-known device such as a flip chip bonder or a die bonder. The arrangement and number of semiconductor wafers can be appropriately set according to the shape and size of the temporary fixing film, the intended production number of semiconductor packages, etc. For example, they can be arranged in a plurality of rows and arranged in a matrix shape of a plurality of columns for temporary fixation. <Step (C)> Step (C) is to laminate the resin composition layer of the resin sheet of the present invention on the semiconductor wafer, or to apply the resin composition of the present invention on the semiconductor wafer and heat it. The step of hardening to form a sealing layer. In step (C), it is preferable to laminate the resin composition layer of the resin sheet of the present invention on the semiconductor wafer and heat-harden it to form a sealing layer. [0168] Lamination of the semiconductor wafer and the resin sheet can be performed by removing the protective film of the resin sheet and then, for example, heating and pressing the resin sheet onto the semiconductor wafer from the support side. Examples of a member for heat-pressing a resin sheet onto a semiconductor wafer (hereinafter also referred to as a "heat-pressing member") include a heated metal plate (SUS mirror plate, etc.) or a metal roller (SUS roller). Furthermore, it is preferable not to directly press the heated pressing member onto the resin sheet, but to press the surface of the semiconductor wafer through an elastic material such as heat-resistant rubber so that the resin sheet fully follows the uneven surface of the semiconductor wafer. [0169] In addition, the lamination of the semiconductor wafer and the resin sheet can be performed by a vacuum lamination method after removing the protective film of the resin sheet. The lamination conditions in the vacuum lamination method are the same as the lamination conditions of the wiring layer and the resin sheet in step (2) of the circuit board manufacturing method, and the preferred range is also the same. [0170] The support of the resin sheet can be laminated with a resin sheet on the semiconductor wafer and then peeled off after thermal hardening, or the support can be peeled off before the resin sheet is laminated on the semiconductor wafer. [0171] The coating conditions for the resin composition are the same as those used when forming the resin composition layer of the resin sheet of the present invention, and the preferred ranges are also the same. [0172] <Step (D)> Step (D) is a step of peeling off the base material and the temporary fixing film from the semiconductor wafer. The peeling method can be appropriately changed according to the material of the temporarily fixed film. For example, the temporarily fixed film can be peeled off by heating, foaming (or expanding), or irradiating ultraviolet rays from the base material side to reduce the adhesive force of the temporarily fixed film. Peeling methods, etc. [0173] In the method of heating, foaming (or expanding) and peeling the temporarily fixed film, the heating conditions are usually 100°C to 250°C for 1 second to 90 seconds or 5 minutes to 15 minutes. In addition, in the method of irradiating ultraviolet rays from the base material side to reduce the adhesive force of the temporarily fixed film and peeling it off, the irradiation dose of ultraviolet rays is usually 10mJ/cm 2 to 1000mJ/cm 2 . [0174] <Step (E)> Step (E) is a step of forming a rewiring formation layer (insulating layer) on the surface of the semiconductor wafer after peeling off the base material and the temporarily fixed film. [0175] The material used to form the rewiring forming layer (insulating layer) is not particularly limited as long as it has insulating properties when the rewiring forming layer (insulating layer) is formed. From the perspective of ease of manufacturing of the semiconductor chip package It seems that photosensitive resin and thermosetting resin are preferred. As the thermosetting resin, a resin composition having the same composition as the resin composition used to form the resin sheet of the present invention can be used. [0176] After the rewiring forming layer (insulating layer) is formed, a through hole can be formed in the rewiring forming layer (insulating layer) in order to connect the semiconductor chip and the conductor layer described below between layers. When the through hole is formed and the material for forming the rewiring forming layer (insulating layer) is a photosensitive resin, first, the surface of the rewiring forming layer (insulating layer) is irradiated with active energy rays through the mask pattern, The wiring layer of the irradiated part is photohardened. [0178] Examples of active energy rays include ultraviolet rays, visible rays, electron beams, X-rays, etc., and ultraviolet rays are particularly preferred. The amount and time of ultraviolet irradiation can be appropriately changed according to the photosensitive resin. As the exposure method, a contact exposure method in which the mask pattern is closely adhered to the rewiring forming layer (insulating layer) for exposure, or a contact exposure method in which the mask pattern is not closely adhered to the rewiring forming layer (insulating layer), can be used. Any non-contact exposure method that uses parallel light to expose. [0179] Next, by developing and rewiring the formation layer (insulating layer), the unexposed portion is removed, and a through hole is formed. The development system is suitable for both wet and dry development. As the developer used in wet development, a well-known developer can be used. [0180] As a development method, for example, a dipping method, a paddle method, a spray method, a brushing method, a scraping method, etc. can be cited. From the viewpoint of resolution, the paddle method is suitable. [0181] When the material forming the rewiring forming layer (insulating layer) is a thermosetting resin, the formation of the through hole is not particularly limited. Laser irradiation, etching, mechanical drilling, etc. can be used, but it is preferred. To be performed by laser irradiation. Laser irradiation can be performed using any suitable laser processing machine such as carbonic acid gas laser, UV-YAG laser, excimer laser, etc. as a light source. [0182] Although the shape of the through hole, that is, the shape of the opening outline when viewed in the extending direction, is not particularly limited, it is generally circular (substantially circular). The top diameter of the through hole (the diameter of the opening on the surface of the rewiring formation layer (insulating layer)) is preferably 50 μm or less. Although the lower limit is not particularly limited, it is preferably 10 μm or more. [0183] <Step (F)> Step (F) is a step of forming a conductor layer (rewiring layer) on the rewiring formation layer (insulating layer). The method of forming the conductor layer on the rewiring formation layer (insulating layer) is the same as the method of forming the conductor layer after forming the through hole in the insulating layer in step (3) of the manufacturing method of the circuit board, and the preferred range is also the same. Alternatively, steps (E) and (F) can be repeated to alternately stack conductor layers (rewiring layers) and rewiring formation layers (insulating layers). [0184] <Step (G)> Step (G) is a step of forming a solder resist layer on the conductor layer. [0185] The material forming the solder resist layer is not particularly limited as long as it has insulating properties when the solder resist layer is formed. From the perspective of ease of manufacturing of the semiconductor chip package, it is preferably a photosensitive resin or thermosetting resin. Sex resin. As the thermosetting resin, a resin composition having the same composition as the resin composition used to form the resin sheet of the present invention can be used. [0186] Moreover, in step (G), if necessary, collision processing to form an impact can be performed. Collision processing can be performed by known methods such as solder balls and solder plating. In addition, the formation of the through hole in the collision processing can be performed in the same manner as step (E). [0187] <Step (H)> The method of manufacturing a semiconductor chip package may include step (H) in addition to steps (A) to (G). Step (H) is a step of cutting a plurality of semiconductor chip packages into individual semiconductor chip packages for individualization. [0188] The third aspect of the semiconductor chip package of the present invention is to form a rewiring layer (insulating layer) and a solder resist layer in the semiconductor chip package (fan-out (Fan-out) type WLP) with the method of the present invention. Semiconductor chip packaging made of resin compositions or resin sheets. [Semiconductor device] Examples of semiconductor devices used to implement the semiconductor chip package of the present invention include those provided in electrical products (such as computers, mobile phones, smartphones, tablet devices, wearable devices, digital cameras, and medical equipment). and televisions, etc.) and various semiconductor devices in vehicles (such as motorcycles, cars, trams, ships, aircraft, etc.). [Examples] [0190] Although the present invention will be specifically described through examples below, the present invention is not limited to these examples. However, in the following description, "parts" and "%" mean "parts by mass" and "% by mass" respectively, unless otherwise expressly stated. [Synthesis Example 1] <Production of Elastomer A> In a flask equipped with a stirring device, a thermometer and a condenser, 368.41 g of ethyl diglycol acetate and Solvesso 150 (aromatic solvent, Exxon Mobil Corporation) 368.41g, place 100.1g (0.4 mol) of diphenylmethane diisocyanate and polycarbonate diol (number average molecular weight: about 2000, hydroxyl equivalent: 1000, non-volatile matter: 100%, "C-2015N" manufactured by Kuraray Co., Ltd.) 400g (0.2 mol), and reacted at 70°C for 4 hours. Next, 195.9g (0.2 mole) of nonylphenol novolak resin (hydroxyl equivalent 229.4g/eq, average function 4.27, average calculated molecular weight 979.5g/mol) and 41.0g ethylene glycol dianhydrotrielliate are placed. (0.1 mol), it took 2 hours to heat up to 150°C and react for 12 hours. Confirmation by FT-IR that the NCO peak at 2250cm-1 disappeared. Confirmation that the NCO peak disappears is regarded as the end of the reaction. After cooling the reactant to room temperature, it is filtered through a 100-mesh filter cloth to obtain a resin with a polycarbonate structure (non-volatile content 50% by mass). The number average molecular weight is 6100. (Preparation of hardened material for evaluation) On the release agent-untreated surface of a release agent-treated PET film ("501010" manufactured by Lintec Co., Ltd., thickness 38 μm, 240 mm square), a glass cloth base material ring was overlapped Oxy resin double-sided copper-clad laminate ("R5715ES" manufactured by Panasonic Co., Ltd., thickness 0.7mm, 255mm square) is fixed on the four sides with polyimide adhesive tape (width 10mm) (hereinafter referred to as "fixed PET film"). The resin varnishes prepared in Examples and Comparative Examples were applied to a PET film ("Lumirror R80" manufactured by Toray Co., Ltd.) which was released using an alkyd resin release agent ("AL-5" manufactured by Lintec Co., Ltd.). Thickness 38 μm, softening point 130°C (hereinafter referred to as "release PET"), apply it with a die coater so that the thickness of the temporary resin composition layer after drying becomes 40 μm, at 80°C to 120°C (average 100°C) for 10 minutes to obtain an adhesive film. Each adhesive film (thickness 40 μm, 200 mm square) was used to separate the temporary resin composition layer from the fixed PET film using a batch-type vacuum pressure laminator (two-stage accumulation laminator, CVP700 manufactured by Nikko Materials Co., Ltd.). The mold processing surface is in contact with each other, and the lamination process is performed in the center to obtain a resin sheet with a support. The lamination process was performed by depressurizing for 30 seconds to lower the air pressure to 13hPa or less, and then pressing at 100°C and a pressure of 0.74MPa for 30 seconds. [0193] Secondly, under the temperature condition of 100°C, it was put into an oven at 100°C for 30 minutes, and then under the temperature condition of 175°C, it was transferred to an oven at 175°C for 30 minutes to heat harden. Then, the substrate was taken out at room temperature, the release PET was peeled off from the resin sheet with the support, and then put into an oven at 180° C., and then thermally cured under curing conditions for 60 minutes. After thermal hardening, the polyimide adhesive tape was peeled off, the hardened product was removed from the glass cloth base epoxy resin double-sided copper-clad laminate, and the PET film ("501010" manufactured by Lintec Co., Ltd.) was also peeled off, and A thin hardened product was obtained. The obtained hardened material is called "hardened material for evaluation."<Measurement of Elastic Modulus and Tensile Breaking Point Strength> A dumbbell-shaped No. 1 shape was cut out of the hardened material for evaluation to obtain a test piece. The tensile strength of this test piece was measured using a tensile testing machine "RTC-1250A" manufactured by Orientech Corporation, and the elastic modulus and tensile breaking point strength at 23°C were determined. The measurement system is carried out in accordance with JIS K7127. This operation was performed three times, and the average value was shown in the table. <Strength evaluation> The forming tape (forming tape) side of the temporary fixing film (Riva alpha No. 31950E, Thermal release tape manufactured by Nitto Denko Co., Ltd.) was placed on an 8-inch silicon wafer with a roll laminator. After attaching to the wafer, 97 silicon wafers (DIE size 9×6mm, height 150um) are arranged at equal intervals on the base adhesive surface of Riva alpha. The resin varnishes prepared in Examples and Comparative Examples were used to release the PET film ("Lumirror R80" manufactured by Toray Co., Ltd.) with an alkyd resin release agent ("AL-5" manufactured by Lintec Co., Ltd.). , thickness 38 μm, softening point 130°C, hereinafter referred to as "release PET"), apply it with a die coater so that the thickness of the temporary resin composition layer after drying becomes 200 μm, at 80°C to 120°C (average 100°C) was dried for 10 minutes to obtain an adhesive film. The obtained adhesive film was laminated on the single side of the silicon wafer of the above-mentioned wafer with silicon wafer using a batch vacuum pressure laminator (2-stage accumulation laminator, CVP700 manufactured by Nikko Materials Co., Ltd.) to seal. Silicon wafer. After heating the silicon wafer in an oven at 150°C for 1 hour, the silicon wafer was heated on a hot plate at 200°C. After the silicon wafer and Riva alpha were peeled off with the forming tape, The interface with the resin sealed with Riva alpha using a base adhesive is peeled off by hand, and the silicon wafer is embedded in the resin to obtain a resin wafer. Those with resin defects or cracks produced during the above process will be graded as "×", and those with no resin defects or cracks will be graded as "○". <Adhesion evaluation> A 1000Å vapor-deposited silicon nitride wafer was prepared on an 8-inch silicon wafer, and the resin varnish prepared in the examples and comparative examples was coated with an alkyd resin release agent (Lintec Co., Ltd.'s "AL-5") release-treated PET film (Toray Co., Ltd.'s "Lumirror R80", thickness 38 μm, softening point 130°C, hereinafter referred to as "release PET"), and temporarily dry it The resin composition layer is coated with a die coater so that the thickness of the resin composition layer becomes 20 μm, and dried at 80°C to 120°C (average 100°C) for 10 minutes to obtain an adhesive film. The obtained adhesive film was laminated on the above-mentioned wafer using a batch-type vacuum pressure laminator (two-stage accumulation laminator, CVP700 manufactured by Nikko Materials Co., Ltd.). After heat-hardening in an oven at 180°C for 1 hour, cut the resin composition layer transversely (100 squares) into a 1mm × 1mm grid according to "JIS K5400-8.5 (1990)", and perform pressure cooker processing (121°C/humidity 100%/100 hours), conduct a tape peeling test and calculate the number of squares that peel off the resin. The number of peeled squares from 0 to 5 was designated as "○", the number of peeled squares from 6 to 19 was designated as "△", and the number of peeled squares from 20 to more than 20 was designated as "×". <Evaluation of warpage> The resin varnishes prepared in Examples and Comparative Examples were applied to a PET film (Toray) treated with an alkyd resin release agent ("AL-5" manufactured by Lintec Co., Ltd.). Co., Ltd.'s "Lumirror R80" with a thickness of 38 μm and a softening point of 130°C (hereinafter referred to as "release PET") is coated with a die coater so that the thickness of the temporary resin composition layer after drying becomes 300 μm. cloth and dried at 80°C to 120°C (average 100°C) for 10 minutes to obtain an adhesive film. The obtained adhesive film was laminated on a 12-inch silicon wafer (thickness: 775um) using a batch-type vacuum pressure laminator (2-stage accumulation laminator, CVP700 manufactured by Nikko Materials Co., Ltd.) and heated at 180°C. 1 hour to harden the resin and attach the resin to the wafer. Place the resin-coated wafer on a flat surface with the resin side facing up, and measure the amount of warpage. The amount of warpage at the maximum warp point is less than 2 mm and is rated as ○, while the amount of warpage of more than 2 mm is rated as ×. [Example 1] Mix 3 parts of bisphenol A type epoxy resin ("828EL" manufactured by Mitsubishi Chemical Co., Ltd., epoxy equivalent: about 186), 10 parts of elastomer A, and phenoxy resin (Mitsubishi Chemical Co., Ltd. "YX7553BH30" made by , epoxy equivalent 258) 3 parts, carbodiimide compound (Nisshinbo Chemical Co., Ltd. "V-07", carbodiimide equivalent 200, non-volatile content 50 mass% toluene solution) 4 parts, amine group 115 parts of silane-based coupling agent ("KBM573" manufactured by Shin-Etsu Chemical Industry Co., Ltd.) surface-treated spherical silica A (average particle diameter 1.7 μm, specific surface area (m 2 /g) 2.7 um), polyphenylene ether oligo Polymer ("OPE-1000" manufactured by Mitsubishi Gas Chemical Co., Ltd., toluene solution with a solid content of approximately 52%, phenolic hydroxyl equivalent: 435g/eq) 9.6 parts, flame retardant ("HCA-HQ" manufactured by Sanko Co., Ltd., 1.5 parts of 10-(2,5-dihydroxyphenyl)-10-hydro-9-oxa-10-phosphenanthrene-10-oxide, average particle size 2 μm), hardening accelerator (manufactured by Shikoku Chemical Industry Co., Ltd. , "2P4MZ-5M", 1-benzyl-2-phenylimidazole, 5 mass% solid content MEK solution) 3 parts, 100 parts of cyclohexanone was uniformly dispersed with a high-speed rotary mixer, and filtered with a cartridge filter ( "SHP050" manufactured by ROKITECHNO Co., Ltd.) was filtered to obtain a resin varnish. [Example 2] Mix 3 parts of bisphenol A type epoxy resin ("828EL" manufactured by Mitsubishi Chemical Co., Ltd., epoxy equivalent: about 186), 10 parts of elastomer A, and phenoxy resin (Mitsubishi Chemical Co., Ltd. "YX6954BH30" made by , epoxy equivalent 258) 3 parts, carbodiimide compound (Nisshinbo Chemical Co., Ltd. "V-07", carbodiimide equivalent 200, non-volatile content 50 mass% toluene solution) 4 parts, amine group 115 parts of silane-based coupling agent ("KBM573" manufactured by Shin-Etsu Chemical Industry Co., Ltd.) surface-treated spherical silica A (average particle diameter 1.7 μm, specific surface area (m 2 /g) 2.7 um), phenol containing a triazine skeleton Novolac hardener ("LA-7054" manufactured by DIC Co., Ltd., MEK solution with a hydroxyl equivalent of about 125 and a solid content of 60%) 3.3 parts, naphthol-based hardener ("SN" manufactured by Nippon Steel & Sumitomo Metal Chemical Co., Ltd. -485", 6 parts of methyl ethyl ketone solution (solid content: 50%) with hydroxyl equivalent: 215g/eq, flame retardant ("HCA-HQ" manufactured by Sanko Co., Ltd., 10-(2,5-dihydroxy Phenyl)-10-hydro-9-oxa-10-phosphenanthrene-10-oxide, average particle size 2 μm) 1.5 parts, hardening accelerator (manufactured by Shikoku Chemical Industry Co., Ltd., "2P4MZ-5M", 1- 3 parts of benzyl-2-phenylimidazole, MEK solution with a solid content of 5% by mass), 100 parts of cyclohexanone were uniformly dispersed with a high-speed rotary mixer, and filtered with a cartridge filter ("SHP050" manufactured by ROKITECHNO). Resin varnish is prepared. [Example 3] Mix 3 parts of bisphenol A type epoxy resin ("828EL" manufactured by Mitsubishi Chemical Co., Ltd., epoxy equivalent: about 186), 10 parts of elastomer A, and phenoxy resin (Mitsubishi Chemical Co., Ltd. "YX6954BH30" made by , epoxy equivalent 258) 3 parts, carbodiimide compound (Nisshinbo Chemical Co., Ltd. "V-07", carbodiimide equivalent 200, non-volatile content 50 mass% toluene solution) 4 parts, amine group 115 parts of silane-based coupling agent ("KBM573" manufactured by Shin-Etsu Chemical Industry Co., Ltd.) surface-treated spherical silica A (average particle diameter 1.7 μm, specific surface area (m 2 /g) 2.7 um), phenol containing a triazine skeleton Novolac hardener (DIC Co., Ltd.'s "LA-7054", MEK solution with a hydroxyl equivalent of about 125 and a solid content of 60%) 5 parts, flame retardant (Sanko Co., Ltd.'s "HCA-HQ", 10-(2 , 5-dihydroxyphenyl)-10-hydro-9-oxa-10-phosphenanthrene-10-oxide, average particle size 2 μm) 1.5 parts, hardening accelerator (manufactured by Shikoku Chemical Industry Co., Ltd., "2P4MZ- 5M", 1-benzyl-2-phenylimidazole, 3 parts of MEK solution with a solid content of 5% by mass), 100 parts of cyclohexanone was uniformly dispersed with a high-speed rotary mixer, and filtered with a cartridge filter (manufactured by ROKITECHNO Co., Ltd. "SHP050") was filtered to obtain resin varnish. [Example 4] Mix 3 parts of bisphenol A type epoxy resin ("828EL" manufactured by Mitsubishi Chemical Co., Ltd., epoxy equivalent: about 186), 10 parts of elastomer A, and dicyclopentadiene type epoxy resin ( "HP-7200" manufactured by DIC Corporation, epoxy equivalent 258) 3 parts, bisphenol F type phenoxy resin ("FX-316" manufactured by Nippon Steel & Sumitomo Chemical Co., Ltd.), 5 parts polyphenylene ether oligo Polymer ("OPE-1000" manufactured by Mitsubishi Gas Chemical Co., Ltd., toluene solution with a solid content of approximately 52%, phenolic hydroxyl equivalent: 435g/eq) 9.6 parts, carbodiimide compound ("V" manufactured by Nissinbo Chemical Co., Ltd. -07", 4 parts of toluene solution (carbodiimide equivalent 200, non-volatile content 50% by mass), spherical silica A surface-treated with aminosilane coupling agent ("KBM573" manufactured by Shin-Etsu Chemical Industry Co., Ltd.) (average particle diameter 1.7 μm, specific surface area (m 2 /g) 2.7 um) 115 parts, flame retardant ("HCA-HQ" manufactured by Sanko Co., Ltd., 10-(2,5-dihydroxyphenyl)-10-hydrogen -1.5 parts of -9-oxa-10-phosphenanthrene-10-oxide, average particle size 2 μm), hardening accelerator (manufactured by Shikoku Chemical Industry Co., Ltd., "2P4MZ-5M", 1-benzyl-2-phenyl 3 parts of imidazole, MEK solution with a solid content of 5% by mass), and 100 parts of cyclohexanone were uniformly dispersed with a high-speed rotary mixer, and filtered with a cartridge filter ("SHP050" manufactured by ROKITECHNO) to prepare a resin varnish. [Example 5] Mix 3 parts of bisphenol A type epoxy resin ("828EL" manufactured by Mitsubishi Chemical Co., Ltd., epoxy equivalent: approximately 186), 5 parts of elastomer A, and a phenoxy resin containing a flexible structure (Mitsubishi Chemical Co., Ltd.'s "YX7180BH40", a 1:1 solution of cyclohexanone with a solid content of 40% by mass: MEK) 25 parts, dicyclopentadiene type epoxy resin (DIC's "HP-7200", Oxygen equivalent: 258) 3 parts of carbodiimide compound ("V-07" manufactured by Nisshinbo Chemical Co., Ltd., carbodiimide equivalent: 200, non-volatile content: 50% by mass, toluene solution), 4 parts, aminosilane-based 120 parts of spherical silica A (average particle diameter 1.7 μm, specific surface area (m 2 /g) 2.7 um) surface-treated with coupling agent ("KBM573" manufactured by Shin-Etsu Chemical Industry Co., Ltd.), and phenolic novolac containing a triazine skeleton It is composed of 8.3 parts of hardener ("LA-7054" manufactured by DIC Co., Ltd., MEK solution with a hydroxyl equivalent of about 125 and a solid content of 60%), flame retardant ("HCA-HQ" manufactured by Sanko Co., Ltd., 10-(2,5 -Dihydroxyphenyl)-10-hydro-9-oxa-10-phosphenanthrene-10-oxide, average particle size 2 μm) 1.5 parts, hardening accelerator (manufactured by Shikoku Chemical Industry Co., Ltd., "2P4MZ-5M" , 1-benzyl-2-phenylimidazole, 3 parts of MEK solution with a solid content of 5% by mass), 100 parts of cyclohexanone, uniformly dispersed with a high-speed rotary mixer, and filtered with a cartridge filter ("SHP050" manufactured by ROKITECHNO Corporation) ) is filtered to obtain resin varnish. [Comparative Example 1] Mixed 3 parts of bisphenol A type epoxy resin ("828EL" manufactured by Mitsubishi Chemical Co., Ltd., epoxy equivalent: approximately 186), 15 parts of elastomer A, and dicyclopentadiene type epoxy resin ( "HP-7200" manufactured by DIC Corporation, epoxy equivalent 258) 3 parts, carbodiimide compound ("V-07" manufactured by Nisshinbo Chemical Co., Ltd., carbodiimide equivalent 200, non-volatile content 50 mass% toluene Solution) 4 parts, spherical silica A (average particle diameter 1.7 μm, specific surface area (m 2 /g) 2.7 um) surface-treated with an aminosilane coupling agent ("KBM573" manufactured by Shin-Etsu Chemical Industry Co., Ltd.) 115 9.6 parts of polyphenylene ether oligomer ("OPE-1000" manufactured by Mitsubishi Gas Chemical Co., Ltd., toluene solution with solid content of about 52%, phenolic hydroxyl equivalent: 435g/eq), flame retardant (Samko "HCA-HQ" produced by the company, 1.5 parts of 10-(2,5-dihydroxyphenyl)-10-hydro-9-oxa-10-phosphenanthrene-10-oxide, average particle size 2 μm), hardening acceleration 3 parts of agent (MEK solution with a solid content of 5% by mass, "2P4MZ-5M" manufactured by Shikoku Chemical Industry Co., Ltd., "2P4MZ-5M", 1-benzyl-2-phenylimidazole, solid content), and 100 parts of cyclohexanone were homogenized with a high-speed rotary mixer. The mixture was dispersed and filtered with a cartridge filter ("SHP050" manufactured by ROKITECHNO) to obtain a resin varnish. [Comparative Example 2] Mix 3 parts of bisphenol A type epoxy resin ("828EL" manufactured by Mitsubishi Chemical Co., Ltd., epoxy equivalent: about 186), dicyclopentadiene type epoxy resin ("HP" manufactured by DIC Corporation) -7200", 3 parts of epoxy equivalent 258), 15 parts of bisphenol F-type phenoxy resin ("FX-316" manufactured by Nippon Steel & Sumitomo Chemical Co., Ltd.), phenolic novolak-based hardener containing triazine skeleton (DIC Co., Ltd.'s "LA-7054", MEK solution with a hydroxyl equivalent of about 125 and a solid content of 60%) 8.3 parts, carbodiimide compound (Nisshinbo Chemical Co., Ltd.'s "V-07", carbodiimide 4 parts of a toluene solution with an equivalent weight of 200 and a non-volatile content of 50% by mass), spherical silica A (average particle diameter 1.7 μm, ratio Surface area (m 2 /g) 2.7um) 115 parts, flame retardant ("HCA-HQ" manufactured by Sanko Co., Ltd., 10-(2,5-dihydroxyphenyl)-10-hydro-9-oxa-10- Phosphenanthrene-10-oxide, average particle size 2 μm) 1.5 parts, hardening accelerator (manufactured by Shikoku Chemical Industry Co., Ltd., "2P4MZ-5M", 1-benzyl-2-phenylimidazole, solid content 5% by mass) 3 parts of MEK solution), 100 parts of cyclohexanone were uniformly dispersed with a high-speed rotary mixer, and filtered with a cartridge filter ("SHP050" manufactured by ROKITECHNO) to prepare a resin varnish. [Comparative Example 3] Mix 3 parts of bisphenol A type epoxy resin ("828EL" manufactured by Mitsubishi Chemical Co., Ltd., epoxy equivalent: about 186), 10 parts of elastomer A, and phenoxy resin (Mitsubishi Chemical Co., Ltd. "YX7553BH30" made by , epoxy equivalent: 258) 3 parts of spherical silica A (average particle diameter 1.7 μm, specific surface area (m 2 /g)) surface-treated with an aminosilane coupling agent ("KBM573" manufactured by Shin-Etsu Chemical Industry Co., Ltd.) 2.7um) 115 parts, polyphenylene ether oligomer ("OPE-1000" manufactured by Mitsubishi Gas Chemical Co., Ltd., toluene solution with solid content of about 52%, phenolic hydroxyl equivalent: 435g/eq) 9.6 parts, barrier Fuel ("HCA-HQ" manufactured by Sanko Co., Ltd., 10-(2,5-dihydroxyphenyl)-10-hydrogen-9-oxa-10-phosphenanthrene-10-oxide, average particle size 2 μm) 1.5 parts, hardening accelerator (Shikoku Chemical Industry Co., Ltd., "2P4MZ-5M", 1-benzyl-2-phenylimidazole, MEK solution with a solid content of 5% by mass), 100 parts of cyclohexanone at high speed The mixture was uniformly dispersed with a rotary mixer and filtered with a cartridge filter ("SHP050" manufactured by ROKITECHNO) to obtain a resin varnish. [0207] [Preparation Example 1] <Preparation of resin sheet for fan-out type WLP> On a polyethylene terephthalate film (thickness 38 μm), the thickness of the resin composition layer after drying was The resin varnish described in Example 1 was applied with a die coater so as to become 200 μm, and dried at 80 to 120° C. (average 100° C.) for 10 minutes to obtain a resin sheet. [0209] It was found that when the sealing layer of a fan-out WLP is made of the above-mentioned resin sheet, it has sufficient performance as a fan-out WLP. [Preparation Example 1] <Preparation of Resin Sheet for Interlayer Insulation> Example 1 was described on a polyethylene terephthalate film (thickness 38 μm) so that the thickness of the resin composition layer after drying would be 200 μm. The resin varnish is coated with a die coater and dried at 80 to 120°C (average 100°C) for 10 minutes to obtain a resin sheet. [0210] It was found that when the interlayer insulating layer of the circuit substrate is made of the above-mentioned resin sheet, the circuit substrate of the present invention has sufficient performance.

Claims (12)

一種樹脂組成物，其係含有(a)於分子內具有聚碳酸酯構造之彈性體、(b)環氧樹脂、(c)無機填充材、(d)苯氧基樹脂及(e)碳二亞胺化合物，(a)成分係具有式(1-a)表示之構造及式(1-b)表示之構造的樹脂，
Figure 106127065-A0305-02-0071-1
Figure 106127065-A0305-02-0071-2
 [式中，R1係表示去除聚碳酸酯二醇的羥基之殘基，R2係表示去除多元酸或其酐的羧基或酸酐基之殘基，R3係表示去除二異氰酸酯化合物的異氰酸酯基之殘基]以及(a)成分具有可與(b)成分進行反應之官能基。 A resin composition containing (a) an elastomer having a polycarbonate structure in the molecule, (b) epoxy resin, (c) inorganic filler, (d) phenoxy resin and (e) carbon dioxide The imine compound, component (a) is a resin having a structure represented by formula (1-a) and a structure represented by formula (1-b),
Figure 106127065-A0305-02-0071-1
Figure 106127065-A0305-02-0071-2
 [In the formula, R1 represents the residue obtained by removing the hydroxyl group of the polycarbonate diol, R2 represents the residue obtained by removing the carboxyl group or acid anhydride group of the polybasic acid or its anhydride, and R3 represents the residue obtained by removing the isocyanate group of the diisocyanate compound. ] and (a) component has a functional group capable of reacting with (b) component. 如請求項1之樹脂組成物，其中，(c)成分的含量係將樹脂組成物之不揮發成分定為100質量%的情況下，為75質量%~95質量%。 For example, the resin composition of Claim 1, wherein the content of component (c) is 75 mass% to 95 mass% when the non-volatile content of the resin composition is 100 mass%. 如請求項1或2之樹脂組成物，其中，(a)成分的含量係將去除(c)成分之樹脂組成物之不揮發成分定為100質量%的情況下，為30質量%~85質量%。 For example, the resin composition of claim 1 or 2, wherein the content of component (a) is 30 mass % to 85 mass %, assuming that the non-volatile content of the resin composition excluding component (c) is 100 mass %. %. 如請求項1或2之樹脂組成物，其中，使樹脂組成物於180℃熱硬化1小時之硬化物在23℃之彈性率為8GPa以上。 The resin composition according to claim 1 or 2, wherein the elastic modulus of the cured product obtained by thermally curing the resin composition at 180°C for 1 hour at 23°C is 8 GPa or more. 如請求項1或2之樹脂組成物，其中，(a)成分具有酚性羥基。 The resin composition of claim 1 or 2, wherein component (a) has a phenolic hydroxyl group. 如請求項1或2之樹脂組成物，其係進一步包含(f)硬化劑，該硬化劑為選自酚系硬化劑中之1種以上。 The resin composition according to claim 1 or 2 further contains (f) a hardener, and the hardener is at least one selected from the group consisting of phenolic hardeners. 如請求項1或2之樹脂組成物，其係半導體晶片封裝之絕緣層用樹脂組成物。 Such as the resin composition of claim 1 or 2, which is a resin composition for the insulating layer of semiconductor chip packaging. 一種樹脂薄片，其係具有支持體、與樹脂組成物層，該樹脂組成物層係包含設置在該支持體上之如請求項1~7中任一項之樹脂組成物。 A resin sheet having a support and a resin composition layer. The resin composition layer includes the resin composition according to any one of claims 1 to 7 provided on the support. 如請求項8之樹脂薄片，其係半導體晶片封裝之絕緣層用樹脂薄片。 Such as the resin sheet of claim 8, which is a resin sheet used for the insulating layer of semiconductor chip packaging. 一種電路基板，其係包含藉由如請求項1~7中任一項之樹脂組成物的硬化物所形成之絕緣層。 A circuit substrate including an insulating layer formed of a cured product of the resin composition according to any one of claims 1 to 7. 一種半導體晶片封裝，其係於如請求項10之電路基板上搭載半導體晶片。 A semiconductor chip package in which a semiconductor chip is mounted on the circuit substrate according to claim 10. 一種半導體晶片封裝，其係包含如請求項1~7中任一項之樹脂組成物，或藉由如請求項8之樹脂薄片密封之半導體晶片。 A semiconductor chip package, which includes a resin composition according to any one of claims 1 to 7, or a semiconductor chip sealed by a resin sheet according to claim 8.
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