TWI816223B - Plasma generation apparatus, substrate processing apparatus using plasma generation apparatus, and plasma generation method - Google Patents
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
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Abstract
本案說明書所揭示之技術係一種用以縮短產生電漿為止所需之時間之技術。 關於本案說明書所揭示之技術之電漿產生裝置具備：電漿產生部，其包含由介電質包圍之複數個電漿電極，且於上述電漿電極之周圍產生電漿；交流電源，其將交流電壓施加於上述電漿產生部所包含之上述複數個電漿電極；及加熱部，其加熱上述電漿產生部。 The technology disclosed in the specification of this case is a technology for shortening the time required to generate plasma. The plasma generating device according to the technology disclosed in the specification of this case includes: a plasma generating part including a plurality of plasma electrodes surrounded by a dielectric material, and generating plasma around the above plasma electrodes; and an AC power supply that will An AC voltage is applied to the plurality of plasma electrodes included in the plasma generating part; and a heating part that heats the plasma generating part.
Description
本案說明書所揭示之技術係關於一種產生電漿之電漿產生裝置、使用其之基板處理裝置及產生電漿之電漿產生方法者。The technology disclosed in the specification of this case relates to a plasma generating device that generates plasma, a substrate processing device using the same, and a plasma generating method that generates plasma.
自先前以來，提案有一種去除形成於基板之上表面之抗蝕劑之技術。例如，於專利文獻1揭示有一種將硫酸及過氧化氫水之混合液供給至基板之上表面，使用該混合液中生成之過硫酸，去除形成於基板之上表面之抗蝕劑之技術。 [先前技術文獻] [專利文獻] Previously, there has been proposed a technique for removing a resist formed on a surface of a substrate. For example, Patent Document 1 discloses a technology in which a mixed solution of sulfuric acid and hydrogen peroxide is supplied to the upper surface of a substrate, and the persulfuric acid generated in the mixed solution is used to remove the resist formed on the upper surface of the substrate. [Prior technical literature] [Patent Document]
[專利文獻1]日本專利特開2020-88208號公報 [專利文獻2]日本專利特開2020-4561號公報 [Patent Document 1] Japanese Patent Application Publication No. 2020-88208 [Patent Document 2] Japanese Patent Application Publication No. 2020-4561
[發明所欲解決之問題][Problem to be solved by the invention]
另一方面，作為環境負荷較上述技術小之代替技術，於專利文獻2揭示有一種由大氣壓電漿產生活性物質，藉由將該活性物質溶入於覆蓋基板之上表面之液膜而剝離抗蝕劑膜之技術。根據該技術，可不使用過氧化氫水而去除抗蝕劑。On the other hand, as an alternative technology with a smaller environmental load than the above-mentioned technology, Patent Document 2 discloses a method of generating an active material by atmospheric pressure plasma, and dissolving the active material into a liquid film covering the upper surface of the substrate to peel off the resist. Etch film technology. According to this technology, the resist can be removed without using hydrogen peroxide water.
此處，於例如產生電漿之面積較大之情形等時，有於各個區域產生電漿為止所需之時間之差異變大之情形。於此種情形時，有均勻之電漿產生於整個該面積為止需要較長時間之問題。Here, for example, when the area where plasma is generated is large, the difference in the time required until plasma is generated in each area may become larger. In this case, there is a problem that it takes a long time for uniform plasma to be generated over the entire area.
本案說明書所揭示之技術係鑑於如以上所記載之問題而完成者，係一種用以縮短產生電漿為止所需之時間之技術。 [解決問題之技術手段] The technology disclosed in the specification of this case was accomplished in view of the problems described above, and is a technology for shortening the time required to generate plasma. [Technical means to solve problems]
本案說明書所揭示之技術之第1態樣之電漿產生裝置具備：電漿產生部，其包含由介電質包圍之複數個電漿電極，且於各個上述電漿電極之周圍產生電漿；交流電源，其將交流電壓施加於上述電漿產生部所包含之複數個上述電漿電極；及加熱部，其加熱上述電漿產生部。A plasma generating device according to a first aspect of the technology disclosed in the specification of this case includes: a plasma generating portion including a plurality of plasma electrodes surrounded by a dielectric material, and generating plasma around each of the plasma electrodes; An AC power supply that applies AC voltage to the plurality of plasma electrodes included in the plasma generating section; and a heating section that heats the plasma generating section.
本案說明書所揭示之技術之第2態樣之電漿產生裝置與第1態樣之電漿產生裝置關聯，進而具備板狀之介電構件；於上述介電構件，形成自上述介電構件之側面延伸至上述介電構件之內部的複數個收納孔；複數個上述電漿電極之各者藉由被收納於上述收納孔，而由作為介電質之上述介電構件包圍。The plasma generating device of the second aspect of the technology disclosed in the specification of this case is related to the plasma generating device of the first aspect, and further includes a plate-shaped dielectric member; the dielectric member is formed from the dielectric member A plurality of receiving holes extend sideways into the interior of the dielectric member; each of the plurality of plasma electrodes is surrounded by the dielectric member as a dielectric by being received in the receiving hole.
本案說明書所揭示之技術之第3態樣之電漿產生裝置與第1或2之態樣之電漿產生裝置關聯，上述加熱部加熱上述電漿產生部內之一部分區域。A third aspect of the plasma generating device of the technology disclosed in the specification of this case is related to the plasma generating device of the first or second aspect, in which the heating unit heats a partial area within the plasma generating unit.
本案說明書所揭示之技術之第4態樣之電漿產生裝置與第1至3中任一態樣之電漿產生裝置關聯，上述加熱部具備：氣體流路，其供自用以供給氣體之氣體供給源供給之上述氣體流動；及複數個吹出口，其等設置於上述氣體流路之端部，且可開閉；且上述加熱部藉由選擇性地打開複數個上述吹出口中之至少一部分，而將上述氣體吹附至上述電漿產生部。A plasma generating device according to a fourth aspect of the technology disclosed in the specification of this case is related to a plasma generating device according to any one of the first to third aspects. The above-mentioned heating part is provided with a gas flow path for supplying gas. The above-mentioned gas flow supplied from the supply source; and a plurality of blowout ports, which are provided at the ends of the above-mentioned gas flow path and can be opened and closed; and the above-mentioned heating part selectively opens at least part of the plurality of above-mentioned blowout ports, The gas is blown to the plasma generating part.
本案說明書所揭示之技術之第5態樣之電漿產生裝置與第4態樣之電漿產生裝置關聯，上述加熱部藉由打開彼此隔開之複數個上述吹出口，而將上述氣體吹附至上述電漿產生部。The plasma generating device of the fifth aspect of the technology disclosed in the specification of this case is related to the plasma generating device of the fourth aspect. The above-mentioned heating part blows the above-mentioned gas by opening a plurality of the above-mentioned blowing ports that are spaced apart from each other. to the above-mentioned plasma generating section.
本案說明書所揭示之技術之第6態樣之電漿產生裝置與第1至5中任一態樣之電漿產生裝置關聯，進而具備對上述電漿產生部內之每個區域測定溫度之測定部，上述加熱部加熱藉由上述測定部測定出之溫度相對較低之區域。A plasma generating device according to a sixth aspect of the technology disclosed in the specification of this case is associated with a plasma generating device according to any one of the first to fifth aspects, and further includes a measuring portion for measuring the temperature of each area within the plasma generating portion. , the above-mentioned heating part heats the area where the temperature measured by the above-mentioned measuring part is relatively low.
本案說明書所揭示之技術之第7態樣之基板處理裝置具備：基板保持部，其保持基板；噴嘴，其將處理液供給至由上述基板保持部保持之上述基板之主面；及上述電漿產生裝置。A substrate processing apparatus according to a seventh aspect of the technology disclosed in this specification includes: a substrate holding portion that holds the substrate; a nozzle that supplies a processing liquid to the main surface of the substrate held by the substrate holding portion; and the plasma Generating device.
本案說明書所揭示之技術之第8態樣之電漿產生方法包含：準備電漿產生裝置之步驟，該電漿產生裝置具備包含由介電質包圍之複數個電漿電極之電漿產生部、及將交流電壓施加於複數個上述電漿電極之交流電源；將交流電壓自上述交流電源施加於複數個上述電漿電極之步驟；及加熱上述電漿產生部之加熱步驟。The plasma generation method of the eighth aspect of the technology disclosed in the specification of this case includes the steps of preparing a plasma generation device having a plasma generation portion including a plurality of plasma electrodes surrounded by a dielectric material, and applying an AC voltage to an AC power supply of a plurality of the above-mentioned plasma electrodes; a step of applying an AC voltage from the above-mentioned AC power supply to a plurality of the above-mentioned plasma electrodes; and a heating step of heating the above-mentioned plasma generating part.
本案說明書所揭示之技術之第9態樣之電漿產生方法與第8態樣之電漿產生方法關聯，其中進而包含對上述電漿產生部內之每個區域測定溫度之步驟，上述加熱步驟係加熱測定出之溫度相對較低之區域之步驟。 [發明之效果] The plasma generation method of the ninth aspect of the technology disclosed in the specification of this case is related to the plasma generation method of the eighth aspect, which further includes the step of measuring the temperature of each area in the above-mentioned plasma generation part, and the above-mentioned heating step is The step of heating an area where the measured temperature is relatively low. [Effects of the invention]
根據本案說明書所揭示之技術之至少第1、8態樣，因於電漿產生部被加熱之狀態下產生電漿，故可縮短產生電漿為止所需之時間。According to at least the first and eighth aspects of the technology disclosed in the specification of this application, since the plasma is generated in a heated state of the plasma generating portion, the time required to generate the plasma can be shortened.
又，與本案說明書所揭示之技術關聯之目的、特徵、態樣、及優點，係藉由以下所示之詳細說明與隨附圖式進而明白。In addition, the purpose, characteristics, aspects, and advantages related to the technology disclosed in the specification of this application can be understood from the detailed description and accompanying drawings shown below.
以下，一面參照隨附之圖式一面對實施形態進行說明。於以下之實施形態中，雖為了說明技術亦顯示詳細之特徵等，但其等為例示，為了實施形態可實施，其等所有未必為必須之特徵。Hereinafter, embodiments will be described with reference to the accompanying drawings. In the following embodiments, detailed features and the like are shown for the purpose of explaining the technology. However, these are only examples, and all of them are not necessarily necessary features in order for the embodiments to be implemented.
另，圖式係概略性顯示者，係為了便於說明，而於圖式中適當省略構成、或簡化構成者。又，於不同圖式分別顯示之構成等之大小及位置之相互關係未必為正確記載者，而為可適當變更者。又，於並非剖視圖之俯視圖等之圖式中，為了易於理解實施形態之內容，亦有附加陰影之情形。In addition, the drawings are schematically shown, and the structures are appropriately omitted or simplified in the drawings for convenience of explanation. In addition, the relationship between the size and position of the components shown in different drawings may not be accurately described, but may be changed appropriately. In addition, in drawings such as plan views that are not cross-sectional views, hatching may be added in order to facilitate understanding of the contents of the embodiments.
又，於以下所示之說明中，對同樣之構成要件標註相同符號並圖示，關於其等之名稱與功能亦同樣。因此，有為了避免重複而省略關於其等之詳細說明之情形。In addition, in the description shown below, the same components are denoted by the same symbols and illustrated, and their names and functions are also the same. Therefore, detailed description thereof may be omitted in order to avoid duplication.
又，於本案說明書所記載之說明中，記載為「具備」、「包含」或「具有」某構成要件等之情形時，只要未特別說明，並非為排除其他構成要件之存在之排他性表現。In addition, when the description recorded in the description of this case is described as "having", "includes" or "having" a certain constituent requirement, etc., this does not mean that it is an exclusive expression that excludes the existence of other constituent requirements unless otherwise specified.
又，於本案說明書所記載之說明中，即使有使用「第1」或「第2」等序數之情形，該等用語亦係為了易於理解實施形態之內容而為方便起見使用者，並非限定於藉由該等序數可產生之順序等者。Furthermore, even if ordinal numbers such as "1st" or "2nd" are used in the description of this specification, these terms are used for convenience and are not limiting in order to make it easier to understand the contents of the embodiments. In the order that can be generated by these ordinal numbers, etc.
又，於本案說明書所記載之說明中，「...軸正方向」或「...軸負方向」等之表現係將沿著圖示之...軸之箭頭之方向設為正方向，將與圖示之...軸之箭頭相反側之方向設為負方向者。Furthermore, in the description of this specification, expressions such as "positive direction of the axis" or "negative direction of the axis" refer to the direction of the arrow along the axis of the illustration as the positive direction. , set the direction opposite to the arrow of the... axis in the figure to the negative direction.
又，於本案說明書所記載之說明中，顯示相等狀態之表現，例如，「同一」、「相等」、「均勻」或「均質」等，只要未特別說明，包含顯示嚴格相等狀態之情形、及於可獲得公差或相同程度之功能之範圍內產生差之情形。Furthermore, in the description of this case, expressions showing a state of equality, such as "same", "equal", "uniform" or "homogeneous", etc., include situations showing a state of strict equality, unless otherwise specified, and Differences occur within the range of achievable tolerances or the same level of functionality.
又，於本案說明書所記載之說明中，即使有使用「上」、「下」、「左」、「右」、「側」、「底」、「表」或「背」等意指特定位置或方向之用語之情形，該等用語亦係為了易於理解實施形態之內容而為方便起見使用者，係與實際實施時之位置或方向無關者。Furthermore, in the description of this case, even if the words "upper", "lower", "left", "right", "side", "bottom", "surface" or "back" are used, they mean a specific position. In the case of terms of direction or direction, these terms are also used for convenience in order to make it easier to understand the content of the embodiment and have nothing to do with the actual position or direction of implementation.
又，於本案說明書所記載之說明中，記載為「...之上表面」或「...之下表面」等之情形時，除成為對象之構成要件之上表面自身或下表面自身外，亦包含於成為對象之構成要件之上表面或下表面形成其他構成要件之狀態。即，例如，記載為「設置於甲之上表面之乙」之情形時，並非妨礙於甲與乙之間介置另一構成要件「丙」者。Furthermore, when the description in the description of this case is described as "...the upper surface" or "...the lower surface", etc., the upper surface itself or the lower surface itself becomes the constituent element of the object. , also includes the state of forming other components on the upper surface or lower surface of the component that becomes the object. That is, for example, when it is described as "B placed on the surface of A", it does not prevent another component "C" from being interposed between A and B.
＜第1實施形態＞ 以下，對關於本實施形態之電漿產生裝置、使用其之基板處理裝置及電漿產生方法進行說明。 <First Embodiment> Hereinafter, the plasma generating apparatus of this embodiment, the substrate processing apparatus using the same, and the plasma generating method will be described.
＜關於基板處理系統之構成＞ 圖1係概略性顯示關於本實施形態之基板處理系統1之構成之例之俯視圖。基板處理系統1具備裝載埠400、分度機器人402、中心機器人406、控制部90、及至少1個基板處理裝置100(圖1中為4個基板處理裝置)。 ＜About the structure of the substrate processing system＞ FIG. 1 is a plan view schematically showing an example of the structure of the substrate processing system 1 according to this embodiment. The substrate processing system 1 includes a loading port 400, an indexing robot 402, a center robot 406, a control unit 90, and at least one substrate processing apparatus 100 (four substrate processing apparatuses in FIG. 1).
各個基板處理裝置100係用以處理基板W(晶圓)者，其中至少1個與使用電漿產生裝置之基板處理裝置對應。基板處理裝置係可用於基板處理之單片式裝置，具體而言，係進行去除附著於基板W之有機物之處理、或基板W之金屬蝕刻等之裝置。附著於基板W之有機物係例如使用完畢之抗蝕劑膜。該抗蝕劑膜係例如作為離子注入步驟用之注入掩模使用者。Each of the substrate processing apparatuses 100 is used to process the substrate W (wafer), and at least one of them corresponds to a substrate processing apparatus using a plasma generating device. The substrate processing device is a single-chip device that can be used for substrate processing. Specifically, it is a device that performs processing to remove organic matter attached to the substrate W or metal etching of the substrate W. The organic substance attached to the substrate W is, for example, a used resist film. The resist film is used, for example, as an implant mask for an ion implantation step.
此處，於成為處理對象之基板包含例如半導體晶圓、液晶顯示裝置用玻璃基板、有機EL(electroluminescence：電致發光)顯示裝置等之平板顯示器(flat panel display)(FPD)用基板、光碟用基板、磁碟用基板、磁光碟用基板、光罩用玻璃基板、陶瓷基板、場發射顯示器(field emission display，即FED)用基板、或太陽電池用基板等。Here, substrates to be processed include, for example, semiconductor wafers, glass substrates for liquid crystal display devices, substrates for flat panel displays (FPD) such as organic EL (electroluminescence) display devices, and substrates for optical discs. Substrates, substrates for magnetic disks, substrates for magneto-optical disks, glass substrates for photomasks, ceramic substrates, substrates for field emission displays (FED), or substrates for solar cells, etc.
另，基板處理裝置100可具有腔室80。該情形時，藉由利用控制部90控制腔室80內之氣氛，基板處理裝置100可於期望之氣氛中進行處理。In addition, the substrate processing apparatus 100 may have a chamber 80 . In this case, by controlling the atmosphere in the chamber 80 using the control unit 90, the substrate processing apparatus 100 can perform processing in a desired atmosphere.
控制部90可控制基板處理系統1之各個構成(後述之旋轉卡盤10之旋轉馬達10D、處理液供給源29、閥25、氣體供給源70或交流電源40等)之動作。載具C係收納基板W之收納器。又，裝載埠400係保持複數個載具C之收納器保持機構。分度機器人402可於裝載埠400與基板載置部404之間搬送基板W。中心機器人406可於基板載置部404及基板處理裝置100間搬送基板W。The control unit 90 can control the operation of each component of the substrate processing system 1 (the rotation motor 10D of the spin chuck 10 described later, the processing liquid supply source 29, the valve 25, the gas supply source 70, the AC power supply 40, etc.). The carrier C is a container for storing the substrate W. In addition, the loading port 400 is a container holding mechanism that holds a plurality of carriers C. The indexing robot 402 can transport the substrate W between the loading port 400 and the substrate placement portion 404 . The central robot 406 can transport the substrate W between the substrate placement unit 404 and the substrate processing apparatus 100 .
分度機器人402、基板載置部404及中心機器人406於各個基板處理裝置100與裝載埠400之間搬送基板W。The indexing robot 402 , the substrate placing unit 404 and the center robot 406 transport the substrate W between each substrate processing apparatus 100 and the loading port 400 .
未處理之基板W藉由分度機器人402自載具C取出。然後，未處理之基板W經由基板載置部404交接至中心機器人406。The unprocessed substrate W is taken out from the carrier C by the indexing robot 402. Then, the unprocessed substrate W is transferred to the center robot 406 via the substrate placement unit 404 .
中心機器人406將該未處理之基板W搬入至基板處理裝置100。然後，基板處理裝置100對基板W進行處理。The central robot 406 carries the unprocessed substrate W into the substrate processing apparatus 100 . Then, the substrate W is processed by the substrate processing apparatus 100 .
於基板處理裝置100中處理完畢之基板W藉由中心機器人406自基板處理裝置100取出。然後，處理完畢之基板W根據需要經由其他基板處理裝置100後，經由基板載置部404交接至分度機器人402。分度機器人402將處理完畢之基板W搬入至載具C。藉由以上，進行對基板W之處理。The substrate W that has been processed in the substrate processing apparatus 100 is taken out from the substrate processing apparatus 100 by the central robot 406 . Then, the processed substrate W passes through other substrate processing apparatuses 100 as necessary, and then is transferred to the indexing robot 402 via the substrate placing unit 404 . The indexing robot 402 carries the processed substrate W into the carrier C. Through the above, the substrate W is processed.
圖2係概念性顯示圖1所示之控制部90之構成之例之圖。控制部90可藉由具有電性電路之一般電腦構成。具體而言，控制部90具備中央運算處理裝置(central processing unit，即CPU)91、唯讀記憶體(read only memory，即ROM)92、隨機存取記憶體(random access memory，即RAM)93、記憶裝置94、輸入部96、顯示部97及通信部98、及將該等相互連接之匯流排線95。FIG. 2 is a diagram conceptually showing an example of the structure of the control unit 90 shown in FIG. 1 . The control unit 90 can be configured by a general computer with electrical circuits. Specifically, the control unit 90 includes a central processing unit (CPU) 91, a read only memory (ROM) 92, and a random access memory (RAM) 93 , the memory device 94, the input unit 96, the display unit 97 and the communication unit 98, and the bus line 95 that connects them to each other.
ROM92存儲基本程式。RAM93作為CPU91進行特定處理時之作業區域使用。記憶裝置94藉由快閃記憶體或硬碟裝置等之非揮發性記憶裝置構成。輸入部96藉由各種開關或觸控面板等構成，自操作人員接收處理配方等之輸入設定指示。顯示部97例如藉由液晶顯示裝置及燈等構成，於CPU91之控制下，顯示各種資訊。通信部98具有經由局部區域網路(local area network)(LAN)等之資料通信功能。ROM92 stores basic programs. The RAM 93 is used as a working area when the CPU 91 performs specific processing. The memory device 94 is constituted by a non-volatile memory device such as a flash memory or a hard disk device. The input unit 96 is composed of various switches, touch panels, etc., and receives input setting instructions such as treatment recipes from the operator. The display unit 97 is composed of, for example, a liquid crystal display device and a lamp, and displays various information under the control of the CPU 91 . The communication unit 98 has a data communication function via a local area network (LAN) or the like.
於記憶裝置94預先設定有圖1之基板處理系統1之各個構成之控制相關之複數個模式。藉由CPU91執行處理程式94P，而選擇上述複數個模式中之1個模式，由該模式控制各個構成。另，處理程式94P亦可記憶於記錄媒體。若使用該記錄媒體，則可將處理程式94P安裝於控制部90。又，控制部90執行之功能之一部分或全部未必藉由軟體實現，亦可藉由專用之邏輯電路等之硬體實現。A plurality of modes related to the control of each component of the substrate processing system 1 of FIG. 1 are preset in the memory device 94 . When the CPU 91 executes the processing program 94P, one of the plurality of modes is selected, and each component is controlled by this mode. In addition, the processing program 94P can also be stored in the recording medium. If this recording medium is used, the processing program 94P can be installed in the control unit 90 . In addition, part or all of the functions executed by the control unit 90 may not necessarily be implemented by software, but may also be implemented by hardware such as dedicated logic circuits.
圖3係概略性顯示本實施形態之基板處理裝置100之構成之例之側視圖。FIG. 3 is a side view schematically showing an example of the structure of the substrate processing apparatus 100 according to this embodiment.
另，圖3所示之構成可由圖1之腔室80包圍。又，腔室80內之壓力為大致大氣壓(例如，0.5個氣壓以上，且2個氣壓以下)。換言之，後述之電漿處理係於大氣壓進行之大氣壓電漿處理。In addition, the structure shown in FIG. 3 can be surrounded by the chamber 80 of FIG. 1 . In addition, the pressure in the chamber 80 is approximately atmospheric pressure (for example, 0.5 atmospheric pressure or more and 2 atmospheric pressure or less). In other words, the plasma treatment described below is atmospheric pressure plasma treatment performed at atmospheric pressure.
基板處理裝置100具備：旋轉卡盤10，其將1塊基板W以大致水平姿勢保持，且使基板W繞通過基板W之中央部之鉛直之旋轉軸線Z1旋轉；筒狀之處理護罩12，其繞基板W之旋轉軸線Z1包圍旋轉卡盤10；處理液噴嘴20，其將處理液噴出至基板W；處理液供給源29，其將處理液供給至處理液噴嘴20；閥25，其切換自處理液供給源29向處理液噴嘴20之處理液之供給及停止供給；及電漿產生裝置55。電漿產生裝置55具備：電漿產生部30，其以覆蓋整個基板W之方式配置於基板W之上方，且作為於大氣壓下產生電漿之大氣壓電漿源；交流電源40，其將交流電壓施加於電漿產生部30；加熱部50，其加熱電漿產生部30；及支持部60，其將電漿產生部30及加熱部50一體地支持。The substrate processing apparatus 100 includes: a spin chuck 10 that holds a substrate W in a substantially horizontal position and rotates the substrate W about a vertical rotation axis Z1 passing through the center of the substrate W; and a cylindrical processing shield 12. It surrounds the spin chuck 10 around the rotation axis Z1 of the substrate W; the processing liquid nozzle 20 that sprays the processing liquid to the substrate W; the processing liquid supply source 29 that supplies the processing liquid to the processing liquid nozzle 20; the valve 25 that switches Supply and stop of supply of the processing liquid from the processing liquid supply source 29 to the processing liquid nozzle 20; and a plasma generating device 55. The plasma generating device 55 is provided with: a plasma generating part 30 that is disposed above the substrate W to cover the entire substrate W and serves as an atmospheric pressure plasma source that generates plasma under atmospheric pressure; and an AC power supply 40 that generates an AC voltage. It is applied to the plasma generating part 30; the heating part 50, which heats the plasma generating part 30; and the supporting part 60, which integrally supports the plasma generating part 30 and the heating part 50.
此處，對於處理液，可根據基板處理裝置100之基板處理之用途而使用各種液體。例如，作為蝕刻液可使用包含鹽酸、氟酸、磷酸、硝酸、硫酸、硫酸鹽、過氧硫酸、過氧硫酸鹽、過氧化氫水、四甲基氫氧化銨或氨與過氧化氫水之混合液(SC1)等之液體。又，作為清洗液可使用包含氨與過氧化氫水之混合液(SC1)、或鹽酸與過氧化氫水之混合水溶液(SC2)等之液體。又，作為清洗液及洗滌液可使用去離子水(DIW：De-Ionized Water)。Here, as the processing liquid, various liquids can be used according to the purpose of substrate processing of the substrate processing apparatus 100 . For example, an etching solution containing hydrochloric acid, hydrofluoric acid, phosphoric acid, nitric acid, sulfuric acid, sulfate, peroxysulfuric acid, peroxysulfate, hydrogen peroxide water, tetramethylammonium hydroxide, or ammonia and hydrogen peroxide water can be used. Mixed liquid (SC1) and other liquids. In addition, as the cleaning liquid, a liquid containing a mixed liquid of ammonia and hydrogen peroxide water (SC1), a mixed aqueous solution of hydrochloric acid and hydrogen peroxide water (SC2), or the like can be used. In addition, deionized water (DIW: De-Ionized Water) can be used as the cleaning liquid and washing liquid.
於本實施形態中，主要說明用以去除形成於基板W之上表面之抗蝕劑膜之處理。於該情形時，作為處理液，設想包含硫酸、硫酸鹽、過氧硫酸及過氧硫酸鹽中至少1個之液體、或包含過氧化氫之液體等。In this embodiment, the process for removing the resist film formed on the upper surface of the substrate W is mainly explained. In this case, as the treatment liquid, a liquid containing at least one of sulfuric acid, sulfate, peroxysulfuric acid, and peroxysulfate, a liquid containing hydrogen peroxide, or the like is envisaged.
處理液噴嘴20於設想複數種處理液之情形時，可與各個處理液對應設置複數個。處理液噴嘴20以於基板W之上表面形成處理液之液膜之方式，將處理液供給至基板W。When a plurality of processing liquids are assumed, a plurality of processing liquid nozzles 20 may be provided corresponding to each processing liquid. The processing liquid nozzle 20 supplies the processing liquid to the substrate W in such a manner that a liquid film of the processing liquid is formed on the upper surface of the substrate W.
處理液噴嘴20可藉由未圖示之臂機構移動。具體而言，藉由於可利用致動器等調整角度之臂構件安裝處理液噴嘴20，處理液噴嘴20例如可於基板W之半徑方向擺動。The processing liquid nozzle 20 can be moved by an arm mechanism (not shown). Specifically, by mounting the processing liquid nozzle 20 on an arm member whose angle can be adjusted using an actuator or the like, the processing liquid nozzle 20 can swing in the radial direction of the substrate W, for example.
旋轉卡盤10具備：圓板狀之旋轉基台10A，其真空吸附大致水平姿勢之基板W之下表面；旋轉軸10C，其自旋轉基台10A之中央部向下方延伸；及旋轉馬達10D，其藉由使旋轉軸10C旋轉，而使吸附於旋轉基台10A之基板W旋轉。另，亦可代替旋轉卡盤10，使用具備自旋轉基台之上表面外周部向上方突出之複數個卡盤銷，且藉由該卡盤銷夾持基板W之周緣部之夾持式之卡盤。The spin chuck 10 is provided with: a disc-shaped spin base 10A that vacuum-absorbs the lower surface of the substantially horizontal substrate W; a rotation shaft 10C that extends downward from the center of the spin base 10A; and a rotation motor 10D. By rotating the rotating shaft 10C, the substrate W adsorbed on the rotating base 10A is rotated. In addition, instead of the spin chuck 10, a clamping type in which a plurality of chuck pins protruding upward from the outer peripheral portion of the upper surface of the rotary base and the peripheral edge portion of the substrate W is clamped by the chuck pins may be used. chuck.
電漿產生部30具備：板狀之介電構件30A，其包含石英等之介電質；複數個電極棒30B，其等於介電構件30A之上表面配置成梳形狀；複數個電極棒30C，其等於介電構件30A之下表面配置成梳形狀；保持部30D，其包含樹脂(例如，聚四氟乙烯(PTFE：polytetrafluoroethylene))或陶瓷等，且於一端保持複數個電極棒30B及複數個電極棒30C；介電管30E，其包含石英等之介電質，且覆蓋各個電極棒30B；介電管30F，其包含石英等之介電質，且覆蓋各個電極棒30C；集合電極30G，其與複數個電極棒30B共通連接，包含鋁等；及集合電極30H，其與複數個電極棒30C共通連接，包含鋁等。集合電極30G與集合電極30H例如以配合後於俯視下呈圓形狀之方式配置，於該圓內，收納複數個電極棒30B及複數個電極棒30C。The plasma generating part 30 includes: a plate-shaped dielectric member 30A, which contains a dielectric material such as quartz; a plurality of electrode rods 30B, which are arranged in a comb shape on the upper surface of the dielectric member 30A; and a plurality of electrode rods 30C, The lower surface of the dielectric member 30A is arranged in a comb shape; the holding portion 30D is made of resin (for example, polytetrafluoroethylene (PTFE: polytetrafluoroethylene)) or ceramic, and holds a plurality of electrode rods 30B and a plurality of electrode rods 30B at one end. Electrode rod 30C; dielectric tube 30E, which contains a dielectric material such as quartz and covers each electrode rod 30B; dielectric tube 30F, which contains a dielectric material such as quartz and covers each electrode rod 30C; collective electrode 30G, It is commonly connected to the plurality of electrode rods 30B and contains aluminum and the like; and the collective electrode 30H is commonly connected to the plurality of electrode rods 30C and contains aluminum and the like. The collective electrode 30G and the collective electrode 30H are arranged, for example, in a circular shape in plan view after being coupled, and a plurality of electrode rods 30B and a plurality of electrode rods 30C are accommodated within the circle.
電極棒30B及電極棒30C係例如由鎢等形成之棒形狀。另，電極棒30B及電極棒30C之形狀並非限定於棒形狀者。又，複數個電極棒30B與複數個電極棒30C以於俯視下不重疊之方式交錯配置。即，若於俯視下觀察，則電極棒30B及電極棒30C交替地排列。The electrode rod 30B and the electrode rod 30C have a rod shape made of, for example, tungsten or the like. In addition, the shapes of the electrode rods 30B and 30C are not limited to rod shapes. Moreover, the plurality of electrode rods 30B and the plurality of electrode rods 30C are arranged staggeredly so as not to overlap in plan view. That is, when viewed from above, the electrode rods 30B and the electrode rods 30C are alternately arranged.
覆蓋各個電極棒30B之介電管30E於電極棒30B之未保持於保持部30D之側之端部，保持於保持部30D。又，覆蓋各個電極棒30C之介電管30F於電極棒30C之未保持於保持部30D之側之端部，保持於保持部30D。The dielectric tube 30E covering each electrode rod 30B is held by the holding part 30D at the end of the electrode rod 30B that is not held by the holding part 30D. Furthermore, the dielectric tube 30F covering each electrode rod 30C is held by the holding part 30D at the end of the electrode rod 30C that is not held by the holding part 30D.
藉此，電極棒30B一端藉由保持部30D直接保持，另一端介隔介電管30E藉由保持部30D保持。同樣地，電極棒30C一端藉由保持部30D直接保持，另一端介隔介電管30F藉由保持部30D保持。Thereby, one end of the electrode rod 30B is directly held by the holding part 30D, and the other end is held by the holding part 30D via the dielectric tube 30E. Similarly, one end of the electrode rod 30C is directly held by the holding part 30D, and the other end is held by the holding part 30D via the dielectric tube 30F.
若藉由交流電源40，於集合電極30G及集合電極30H之間施加交流電壓，則於連接於集合電極30G之各電極棒30B與連接於集合電極30H之各電極棒30C之間施加交流電壓。其結果，於電極棒30B與電極棒30C之間產生介電質阻擋放電。且，於該放電之放電路徑之周圍產生氣體之電漿化，形成沿著隔開電極棒30B與電極棒30C之介電構件30A之表面2維擴展之電漿空間。When the AC power supply 40 applies an AC voltage between the collective electrode 30G and the collective electrode 30H, an AC voltage is applied between each electrode rod 30B connected to the collective electrode 30G and each electrode rod 30C connected to the collective electrode 30H. As a result, dielectric barrier discharge occurs between electrode rod 30B and electrode rod 30C. Then, plasma is generated around the discharge path of the discharge, forming a plasma space that extends two-dimensionally along the surface of the dielectric member 30A that separates the electrode rod 30B and the electrode rod 30C.
此處，於形成上述電漿空間時，亦可對電漿產生部30之下方之空間(即，基板W之上方之空間)供給例如O 2(氧)、Ne、CO 2、空氣、惰性氣體或其等之組合之氣體。惰性氣體係例如N 2或稀有氣體。稀有氣體係例如He或Ar等。 Here, when forming the above plasma space, for example, O 2 (oxygen), Ne, CO 2 , air, or inert gas may be supplied to the space below the plasma generating part 30 (that is, the space above the substrate W). or combinations thereof. Inert gas systems such as N2 or noble gases. Rare gas systems such as He or Ar, etc.
加熱部50加熱電漿產生部30之例如至少一部分之電極棒30B及至少一部分之電極棒30C。關於加熱部50之詳細構成予以後述。另，雖加熱部50於圖3中與電漿產生部30一體地被支持，但亦可與電漿產生部30獨立設置。但，若加熱部50與電漿產生部30一體地被支持，則因加熱部50配置於電漿產生部30之附近，故加熱部50可有效率地加熱電漿產生部30。The heating part 50 heats, for example, at least a part of the electrode rod 30B and at least a part of the electrode rod 30C of the plasma generating part 30 . The detailed structure of the heating unit 50 will be described later. In addition, although the heating part 50 is supported integrally with the plasma generating part 30 in FIG. 3 , it may be provided independently from the plasma generating part 30 . However, if the heating part 50 and the plasma generating part 30 are integrally supported, the heating part 50 is disposed near the plasma generating part 30 , so the heating part 50 can efficiently heat the plasma generating part 30 .
支持部60將電漿產生部30及加熱部50一體地支持，且例如可藉由未圖示之驅動機構而於圖3之Z軸方向移動。支持部60由樹脂(例如，PTFE)或陶瓷等構成。The supporting part 60 integrally supports the plasma generating part 30 and the heating part 50, and is movable in the Z-axis direction of FIG. 3 by, for example, a driving mechanism (not shown). The support part 60 is made of resin (eg, PTFE), ceramics, or the like.
另，於圖3中，雖處理液噴嘴20與電漿產生部30分開設置，但處理液噴嘴20亦可與電漿產生部30一體地設置，且藉由支持部60支持。In addition, in FIG. 3 , although the processing liquid nozzle 20 and the plasma generating part 30 are provided separately, the processing liquid nozzle 20 may also be provided integrally with the plasma generating part 30 and supported by the supporting part 60 .
＜關於基板處理裝置之動作＞ 接著，對基板處理裝置之動作進行說明。關於本實施形態之基板處理裝置之基板之處理方法具備以下步驟：對搬送至基板處理裝置100之基板W進行藥液處理；對已進行藥液處理之基板W進行清洗處理；對已進行清洗處理之基板W進行乾燥處理；及將已進行乾燥處理之基板W自基板處理裝置100搬出。 <About the operation of the substrate processing device> Next, the operation of the substrate processing apparatus will be described. The substrate processing method of the substrate processing apparatus of this embodiment includes the following steps: performing chemical liquid treatment on the substrate W transported to the substrate processing apparatus 100; cleaning the substrate W that has been subjected to chemical liquid treatment; and cleaning the substrate W. The substrate W is subjected to a drying process; and the dried substrate W is unloaded from the substrate processing apparatus 100 .
以下，針對基板處理裝置之動作中所含之、去除藥液處理過程中或藥液處理後附著於基板W之有機物(例如，使用完畢之抗蝕劑膜)之步驟(即，屬於上述步驟中之進行藥液處理之步驟、或進行清洗處理之步驟的步驟)，一面參照圖4、圖5及圖6一面進行說明。此處，圖4係顯示基板處理裝置之動作之例之流程圖。又，圖5及圖6係用以說明關於本實施形態之基板處理裝置之動作之圖。Hereinafter, the steps included in the operation of the substrate processing apparatus to remove organic matter (for example, a used resist film) adhered to the substrate W during or after the chemical solution treatment (i.e., among the above-mentioned steps) The steps of performing the chemical solution treatment or the steps of performing the cleaning treatment) will be described with reference to Figures 4, 5 and 6. Here, FIG. 4 is a flowchart showing an example of the operation of the substrate processing apparatus. 5 and 6 are diagrams for explaining the operation of the substrate processing apparatus according to this embodiment.
首先，旋轉卡盤10保持基板W(圖4之步驟ST01)。且，在旋轉卡盤10之驅動下，基板W旋轉。First, the spin chuck 10 holds the substrate W (step ST01 in FIG. 4 ). And, driven by the spin chuck 10, the substrate W rotates.
接著，如圖5所例示，自處理液供給源29向處理液噴嘴20供給處理液101，於基板W旋轉之狀態下，自處理液噴嘴20向基板W之上表面噴出處理液101(圖4之步驟ST02)。此時，藉由未圖示之噴嘴臂等，調整處理液噴嘴20於基板W之上表面之位置。另，於本實施形態中，雖顯示於基板W旋轉之狀態下噴出處理液101之情形，但基板W可不旋轉，亦可為基板W低速旋轉之劃動(paddling)狀態。Next, as illustrated in FIG. 5 , the processing liquid 101 is supplied from the processing liquid supply source 29 to the processing liquid nozzle 20 , and while the substrate W is rotating, the processing liquid 101 is ejected from the processing liquid nozzle 20 toward the upper surface of the substrate W ( FIG. 4 Step ST02). At this time, the position of the processing liquid nozzle 20 on the upper surface of the substrate W is adjusted by a nozzle arm (not shown) or the like. In addition, in this embodiment, the processing liquid 101 is ejected while the substrate W is rotating. However, the substrate W may not be rotated, or may be in a paddling state in which the substrate W is rotated at a low speed.
藉由自處理液噴嘴20噴出處理液101，而如圖5所例示，於基板W之上表面形成處理液101之液膜101A(圖4之步驟ST03)。此處，液膜101A之膜厚為例如0.1 mm以上，且2.0 mm以下，較佳為0.2 mm左右。By ejecting the processing liquid 101 from the processing liquid nozzle 20, as shown in FIG. 5, a liquid film 101A of the processing liquid 101 is formed on the upper surface of the substrate W (step ST03 in FIG. 4). Here, the film thickness of the liquid film 101A is, for example, 0.1 mm or more and 2.0 mm or less, preferably about 0.2 mm.
另一方面，藉由於集合電極30G及集合電極30H之間施加來自交流電源40之特定交流電壓，而於電漿產生部30之介電構件30A之表面產生電漿(圖4之步驟ST04)。具體而言，沿著介電構件30A表面，形成2維擴展之電漿空間。藉由該電漿空間內之電漿之作用，使該空間附近之氣體產生活性物質。活性物質包含具有電荷之離子、或電性呈中性之自由基等。例如，氣體為包含O 2者之情形時，藉由電漿產生部30中之電漿之作用，產生作為活性物質之一種之氧自由基。 On the other hand, by applying a specific AC voltage from the AC power supply 40 between the collective electrode 30G and the collective electrode 30H, plasma is generated on the surface of the dielectric member 30A of the plasma generating part 30 (step ST04 in FIG. 4 ). Specifically, a two-dimensional expanded plasma space is formed along the surface of the dielectric member 30A. Through the action of the plasma in the plasma space, the gas near the space generates active substances. Active substances include charged ions, electrically neutral free radicals, etc. For example, when the gas contains O 2 , oxygen radicals, which are one of the active materials, are generated by the action of plasma in the plasma generating unit 30 .
此處，期望電漿產生部30如上所述般於產生電漿之階段中於特定之待機位置(例如，如圖5所例示之與基板W於Z軸正方向充分隔開之位置)待機，於介電構件30A之表面適度產生均勻之電漿後，移動至基板W附近之處理位置(例如，如圖6所例示之於基板W之Z軸正方向側與基板W充分接近之位置)。若為此種態樣，則藉由於產生均勻之電漿之狀態下使電漿作用於基板W之表面之液膜101A，可進行均勻之處理。另，與基板W充分接近之位置係例如與基板W相距2 mm之位置，若為該位置，則可充分使電漿作用於形成於基板W之上表面之薄液膜101A。Here, it is desired that the plasma generating unit 30 waits at a specific standby position (for example, a position sufficiently separated from the substrate W in the positive direction of the Z-axis as illustrated in FIG. 5 ) during the stage of generating plasma as described above. After moderately uniform plasma is generated on the surface of the dielectric member 30A, it is moved to a processing position near the substrate W (for example, a position sufficiently close to the substrate W on the Z-axis positive direction side of the substrate W as illustrated in FIG. 6 ). In this aspect, by causing the plasma to act on the liquid film 101A on the surface of the substrate W in a state where uniform plasma is generated, uniform processing can be performed. In addition, the position sufficiently close to the substrate W is, for example, a position 2 mm away from the substrate W. If this position is used, the plasma can sufficiently act on the thin liquid film 101A formed on the upper surface of the substrate W.
且，如圖6所例示，將由電漿產生部30之電漿102之作用產生之活性物質向液膜101A供給(圖4之步驟ST05)。And, as illustrated in FIG. 6 , the active material generated by the action of the plasma 102 of the plasma generating unit 30 is supplied to the liquid film 101A (step ST05 in FIG. 4 ).
藉由向液膜101A供給活性物質，而於液膜101A中，活性物質使處理液101活性化。作為具體之一例，活性物質作用於基板W之上表面之硫酸之液膜101A。藉此，提高處理液101之處理性能。具體而言，藉由活性物質與硫酸之反應，生成處理性能(此處為氧化力)較高之過硫酸。過硫酸亦稱為過氧硫酸。藉由該過硫酸作用於基板W之抗蝕劑，可氧化去除抗蝕劑。By supplying the active material to the liquid film 101A, the active material activates the treatment liquid 101 in the liquid film 101A. As a specific example, the active material acts on the sulfuric acid liquid film 101A on the upper surface of the substrate W. Thereby, the processing performance of the processing liquid 101 is improved. Specifically, through the reaction between the active material and sulfuric acid, persulfuric acid with high treatment performance (here, oxidizing power) is generated. Persulfuric acid is also called peroxysulfuric acid. By the persulfuric acid acting on the resist of the substrate W, the resist can be oxidized and removed.
又，活性物質包含氧自由基之情形，藉由氧自由基之氧化力，促進基板W上之抗蝕劑膜之去除。In addition, when the active material contains oxygen radicals, the removal of the resist film on the substrate W is accelerated by the oxidizing power of the oxygen radicals.
另，於上述說明中，雖於處理液噴嘴20之動作後進行電漿產生部30之動作，但動作順序並非限定於此者，例如，處理液噴嘴20之動作與電漿產生部30之動作亦可大致同時進行。In addition, in the above description, although the operation of the plasma generating unit 30 is performed after the operation of the processing liquid nozzle 20, the operation sequence is not limited to this. For example, the operation of the processing liquid nozzle 20 and the operation of the plasma generating unit 30 It can also be done roughly at the same time.
又，於本實施形態中，電漿產生部30以覆蓋基板W之整個上表面之方式配置，但於電漿產生部30以僅覆蓋基板W之一部分之方式配置之情形時，亦可藉由未圖示之驅動機構，使電漿產生部30於基板W之上表面之位置隨著基板W之旋轉而沿著基板W之上表面於基板W之旋轉方向及徑向移動。In addition, in this embodiment, the plasma generating part 30 is arranged so as to cover the entire upper surface of the substrate W. However, when the plasma generating part 30 is arranged so as to cover only a part of the substrate W, the plasma generating part 30 may also be arranged by The driving mechanism (not shown) causes the position of the plasma generating part 30 on the upper surface of the substrate W to move along the upper surface of the substrate W in the rotational direction and radial direction of the substrate W as the substrate W rotates.
又，液膜101A之形成係藉由開始向基板W之上表面供給處理液101而開始，藉由停止向基板W之上表面供給處理液101而停止，但於停止供給來自處理液噴嘴20之處理液101後，若基板W未高速旋轉(例如，基板W低速旋轉之劃動，或基板W未旋轉之狀態等)，則液膜101A亦可維持。活性物質之對液膜101A之供給係於處理液101之供給停止後，於維持液膜101A之狀態下進行。又，活性物質之對液膜101A之供給亦可於開始處理液101之供給後，且停止處理液101之供給前進行。In addition, the formation of the liquid film 101A is started by starting to supply the processing liquid 101 to the upper surface of the substrate W, and is stopped by stopping the supply of the processing liquid 101 to the upper surface of the substrate W. However, when the supply of the processing liquid 101 from the processing liquid nozzle 20 is stopped, After the liquid 101 is processed, if the substrate W is not rotated at high speed (for example, the substrate W is rotated at a low speed, or the substrate W is not rotated, etc.), the liquid film 101A can also be maintained. The supply of the active material to the liquid film 101A is performed while maintaining the liquid film 101A after the supply of the treatment liquid 101 is stopped. In addition, the active material may be supplied to the liquid film 101A after starting the supply of the processing liquid 101 and before stopping the supply of the processing liquid 101 .
另，於上述去除處理之後，通常進行基板W之洗滌步驟(清洗步驟)及乾燥步驟。例如，洗滌步驟係藉由對基板W噴出純水(DIW)進行，乾燥步驟係利用異丙醇(IPA：isopropyl alcohol)進行乾燥，但亦可進行使基板W高速旋轉之甩動乾燥或對基板上表面噴出氮氣之N 2鼓風等。 In addition, after the above-mentioned removal process, a washing step (cleaning step) and a drying step of the substrate W are usually performed. For example, the washing step is performed by spraying pure water (DIW) onto the substrate W, and the drying step is performed using isopropyl alcohol (IPA: isopropyl alcohol). However, the substrate W may also be shaken and dried by rotating the substrate W at a high speed or the substrate may be dried. The upper surface sprays nitrogen gas, N2 blast, etc.
＜關於加熱部＞ 接著，對加熱部50進行說明。圖7係具體性顯示加熱部50及其周邊構造之構成之例之圖。另，於圖7中，交流電源40、集合電極30G及集合電極30H為了簡單而省略圖示。如圖7所例示，加熱部50具備：氣體流路50A，其供自氣體供給源70供給之氣體(例如，N 2或Ar等惰性氣體、或乾燥氣體)流動；及吹出口50B，其設置於氣體流路50A分支之下游之各個端部。各個吹出口50B例如於俯視下延伸至基板W之周向之至少一部分而形成。各個吹出口50B係例如藉由沖孔加工等而形成之沖孔。 <About the heating unit> Next, the heating unit 50 will be described. FIG. 7 is a diagram specifically showing an example of the structure of the heating unit 50 and its peripheral structure. In addition, in FIG. 7 , the AC power supply 40 , the collective electrode 30G and the collective electrode 30H are not shown for simplicity. As illustrated in FIG. 7 , the heating unit 50 is provided with: a gas flow path 50A through which gas (for example, an inert gas such as N 2 or Ar, or a dry gas) supplied from the gas supply source 70 flows; and a blower outlet 50B provided with At each end downstream of the branch of the gas flow path 50A. Each blowout port 50B is formed to extend to at least a part of the circumferential direction of the substrate W in a plan view, for example. Each blower outlet 50B is a punched hole formed by punching processing or the like.
自吹出口50B吹出之氣體係用以加熱電漿產生部30之一部分區域或整體之高溫氣體。即，自吹出口50B向電漿產生部30(例如，電極棒30B及電極棒30C)吹出暖風。此處，自吹出口50B吹出之氣體可為於自氣體供給源70供給之時點保持為高溫之氣體，亦可為加熱器50具備未圖示之加熱器，於氣體流路50A藉由該加熱器加熱而成為高溫之氣體。The gas system blown out from the blowing outlet 50B is used to heat a partial area or the entire high-temperature gas of the plasma generating part 30 . That is, warm air is blown from the blowing outlet 50B toward the plasma generating part 30 (for example, the electrode rod 30B and the electrode rod 30C). Here, the gas blown out from the blowing outlet 50B may be a gas that is maintained at a high temperature when supplied from the gas supply source 70 , or the heater 50 may be provided with a heater not shown in the figure, and the gas flow path 50A may be heated by this The device heats it up and turns it into a high-temperature gas.
另，於圖7所示之例中，氣體流路50A與形成於支持加熱部50之支持部60之內部之氣體流路60A連通，自氣體供給源70供給之氣體通過氣體流路60A及氣體流路50A到達至複數個吹出口50B。又，於圖7所示之例中，加熱部50可具備作為設置於與電漿產生部30之邊界部分之間隙之排氣口50D。若為此種構成，則自吹出口50B吹出並加熱電漿產生部30之氣體其後自排氣口50D排出。In the example shown in FIG. 7 , the gas flow path 50A is connected to the gas flow path 60A formed inside the support portion 60 that supports the heating portion 50 , and the gas supplied from the gas supply source 70 passes through the gas flow path 60A and the gas flow path 60A. The flow path 50A reaches the plurality of blowing outlets 50B. In the example shown in FIG. 7 , the heating unit 50 may be provided with an exhaust port 50D provided as a gap between the heating unit 50 and the plasma generating unit 30 . With this structure, the gas blown out from the blowing port 50B and heating the plasma generating part 30 is then discharged from the exhaust port 50D.
於各個吹出口50B可安裝擋板構件50C。擋板構件50C藉由於加熱部50之下表面滑動，可彼此獨立地開關對應之吹出口50B。具體而言，擋板構件50C可於俯視下與吹出口50B重疊之位置即關閉位置、與俯視下不與吹出口50B重疊之位置即打開位置之間移動，可於關閉位置封塞對應之吹出口50B，於打開位置開放對應之吹出口50B。該動作例如藉由滾珠螺桿機構或氣缸等之驅動機構實現。The baffle member 50C can be attached to each blower outlet 50B. The baffle members 50C can open and close the corresponding blowout ports 50B independently of each other by sliding on the lower surface of the heating part 50 . Specifically, the baffle member 50C can move between a position where it overlaps with the blower outlet 50B in a plan view, that is, a closed position, and a position where it does not overlap with the blower outlet 50B in a plan view, that is, an open position, and can block the corresponding blower in the closed position. The outlet 50B opens the corresponding blowing outlet 50B in the open position. This action is achieved, for example, by a driving mechanism such as a ball screw mechanism or a cylinder.
各個擋板構件50C之開閉動作例如藉由控制部90控制。藉由該控制，可自選擇性地打開之吹出口50B對電漿產生部30內之任意區域吹附暖風。另，若為可開閉各個吹出口50B之構成，則亦可設置其他形態之開閉機構。The opening and closing operation of each baffle member 50C is controlled by the control unit 90, for example. By this control, warm air can be blown to any area in the plasma generating part 30 from the selectively opened blowout port 50B. In addition, if each blower outlet 50B is configured to be openable and closable, other forms of opening and closing mechanisms may be provided.
又，於電漿產生裝置55，亦可設置用以測定電漿產生部30之電極棒30B及電極棒30C之溫度之測定部72。測定部72係例如輻射溫度計。於圖7中，測定部72與電漿產生部30、加熱部50及支持部60獨立設置，但亦可與電漿產生部30、加熱部50或支持部60一體地設置。又，設置測定部72之位置並非限定於圖7所示之位置者。Furthermore, the plasma generating device 55 may be provided with a measuring part 72 for measuring the temperatures of the electrode rods 30B and 30C of the plasma generating part 30 . The measuring unit 72 is, for example, a radiation thermometer. In FIG. 7 , the measuring part 72 is provided independently from the plasma generating part 30 , the heating part 50 and the supporting part 60 . However, the measuring part 72 may be provided integrally with the plasma generating part 30 , the heating part 50 or the supporting part 60 . In addition, the position where the measuring part 72 is installed is not limited to the position shown in FIG. 7 .
＜關於加熱方法＞ 接著，對加熱部50之電漿產生部30之加熱方法進行說明。電漿產生部30內之各個區域之產生電漿為止(形成電漿空間為止)所需之時間係因配置於該區域之電極棒之個體差、集合電極之個體差、或電漿產生部30之組裝誤差等而存在差異。尤其，於電漿產生部30之形成電漿空間之面積較大之情形時該差異亦變大，於電漿產生部30內之整個區域產生均勻之電漿為止所需之時間變長。 ＜About heating method＞ Next, the heating method of the plasma generating part 30 of the heating part 50 will be described. The time required for each area in the plasma generating section 30 to generate plasma (to form a plasma space) is determined by individual differences in the electrode rods arranged in the area, individual differences in the collective electrodes, or the plasma generating section 30 There are differences due to assembly errors, etc. In particular, when the area of the plasma generating part 30 forming the plasma space is large, the difference becomes larger, and the time required to generate uniform plasma in the entire area within the plasma generating part 30 becomes longer.
此處，發明者們發現，於產生大氣壓電漿等之電漿之情形時，藉由將100℃等之高溫氣體向電漿產生部30吹附，可縮短產生電漿為止所需之時間。圖8係顯示於電漿產生部30內之整個區域產生電漿為止所需之時間之圖。於圖8中，縱軸顯示溫度(值為相對值)，橫軸顯示時間(值為相對值)。又，於圖8中，圓形記號顯示於未加熱之狀態(常溫之狀態)下施加電壓之情形時之電漿產生部30之溫度之推移，三角記號顯示於加熱至100℃之狀態下施加電壓之情形時之電漿產生部30之溫度之推移，四角記號係顯示於加熱至150℃之狀態下施加電壓之情形時之電漿產生部30之溫度之推移。又，圖8之縱軸之溫度[50]係溫度上升鈍化之閾值溫度，將該閾值溫度設為於電漿產生部30內之整個區域產生電漿之溫度。Here, the inventors found that when plasma such as atmospheric pressure plasma is generated, the time required until plasma is generated can be shortened by blowing high-temperature gas such as 100° C. to the plasma generating part 30 . FIG. 8 is a diagram showing the time required until plasma is generated in the entire area within the plasma generating unit 30 . In Figure 8, the vertical axis shows temperature (the value is a relative value), and the horizontal axis shows time (the value is a relative value). In addition, in FIG. 8 , the circular marks show the transition of the temperature of the plasma generating part 30 when a voltage is applied in an unheated state (normal temperature state), and the triangular marks show a change in the temperature when the voltage is applied when heated to 100°C. The changes in the temperature of the plasma generating part 30 when a voltage is applied. The four-corner marks show the changes in the temperature of the plasma generating part 30 when a voltage is applied while being heated to 150°C. In addition, the temperature [50] on the vertical axis of FIG. 8 is the threshold temperature for temperature rise passivation, and this threshold temperature is the temperature at which plasma is generated in the entire area within the plasma generating section 30 .
如圖8所例示，於未加熱之狀態(常溫之狀態)下施加電壓之電漿產生部30到達閾值溫度為止需要時間[5]，與此相對，於加熱至100℃或150℃之狀態下施加電壓之電漿產生部30可以時間[5]之一半左右之時間到達閾值溫度(參照圖8之沙地部分)。As shown in FIG. 8 , in an unheated state (normal temperature state), it takes time [5] for the plasma generating part 30 to which voltage is applied to reach the threshold temperature. In contrast, in a state heated to 100°C or 150°C, The plasma generating part 30 to which voltage is applied can reach the threshold temperature in about half of the time [5] (see the sand portion in FIG. 8 ).
即，藉由於產生電漿之前將電漿產生部30例如加熱至100℃以上，可縮短於電漿產生部30內之整個區域產生均勻之電漿為止所需之時間。That is, by heating the plasma generating part 30 to, for example, 100° C. or higher before generating plasma, the time required to generate uniform plasma in the entire area within the plasma generating part 30 can be shortened.
於本實施形態中，加熱部50於電漿產生部30產生電漿之前加熱電漿產生部30之一部分或整體。具體而言，藉由自吹出口50B向電漿產生部30(例如，電極棒30B及電極棒30C)吹出高溫氣體，而加熱電漿產生部30。In this embodiment, the heating part 50 heats a part or the whole of the plasma generating part 30 before the plasma generating part 30 generates plasma. Specifically, the plasma generating part 30 is heated by blowing high-temperature gas from the blowing outlet 50B toward the plasma generating part 30 (for example, the electrode rod 30B and the electrode rod 30C).
藉此，因於電漿產生部30及其附近之氣體被加熱之狀態下產生電漿，故可縮短於電漿產生部30內之整個區域產生電漿為止所需之時間。且，藉由縮短產生電漿為止所需之時間，各個區域之該時間之差異亦變小，可於整個區域產生均勻之電漿。Thereby, since plasma is generated in a heated state in the plasma generating part 30 and the gas in the vicinity thereof, the time required until plasma is generated in the entire area within the plasma generating part 30 can be shortened. Furthermore, by shortening the time required to generate plasma, the difference in time between each area is also reduced, and uniform plasma can be generated in the entire area.
另，因於電漿產生部30產生電漿為止需要時間，故期望於進行電漿處理之前之步驟，例如，於將液膜101A形成於基板W之上表面之步驟之期間，於電漿產生部30位於待機位置之狀態下開始該加熱。In addition, since it takes time for the plasma generating unit 30 to generate plasma, it is desirable to generate the plasma during the steps before performing the plasma treatment, for example, during the step of forming the liquid film 101A on the upper surface of the substrate W. The heating is started with the part 30 in the standby position.
又，亦可使用測定部72測定電漿產生部30內之複數個區域之溫度，基於該測定結果，特定使用加熱部50加熱之區域。Alternatively, the measuring unit 72 may be used to measure the temperatures of a plurality of areas in the plasma generating unit 30 , and based on the measurement results, the area to be heated by the heating unit 50 may be specified.
圖9係顯示於電漿產生部30內之一部分區域產生電漿之狀態之俯視圖。如圖9所例示，因即使於對電漿產生部30之複數個電極棒30B及複數個電極棒30C同樣施加電壓之情形時，產生電漿102為止所需之時間亦產生差異，故於電漿產生部30內之整個區域產生電漿為止所需之時間變長。FIG. 9 is a top view showing a state in which plasma is generated in a partial area within the plasma generating unit 30 . As shown in FIG. 9 , even when the same voltage is applied to the plurality of electrode rods 30B and the plurality of electrode rods 30C of the plasma generating part 30, the time required until the plasma 102 is generated is different. The time required until plasma is generated in the entire area within the plasma generating section 30 becomes longer.
另一方面，作為產生電漿為止所需之時間變長之原因之一，考慮存在產生電漿之該區域之溫度相對難以上升之部位。因此，首先，使用測定部72測定產生電漿為止之電漿產生部30內之各個區域之溫度，預先特定溫度相對較低之區域。且，藉由打開與該區域對應之吹出口50B，將暖風吹附至該區域(具體而言，位於該區域之電極棒30B及電極棒30C)，而選擇性地加熱與電漿產生部30內之一部分區域對應之該區域。藉此，可減少電漿產生部30內之區域間之產生電漿為止所需之時間之差異，而有效地縮短於電漿產生部30內之整個區域產生均勻之電漿為止所需之時間。On the other hand, one of the reasons why the time required for generating plasma becomes long is that there is a location where the temperature of the region where plasma is generated is relatively difficult to rise. Therefore, first, the temperature of each area in the plasma generating unit 30 until plasma is generated is measured using the measuring unit 72, and an area with a relatively low temperature is specified in advance. Furthermore, by opening the blower outlet 50B corresponding to the area, warm air is blown to the area (specifically, the electrode rod 30B and the electrode rod 30C located in the area), thereby selectively heating and plasma generating part 30 A part of the area corresponds to this area. Thereby, the difference in the time required to generate plasma between regions within the plasma generating part 30 can be reduced, and the time required to generate uniform plasma in the entire region within the plasma generating part 30 can be effectively shortened. .
圖10係顯示基於測定部72之溫度之測定結果，打開一部分吹出口50B之情形時之例之俯視圖。於圖10所示之情形時，藉由測定部72測定溫度，判定某區域(圖10之右上部分)之溫度相對較低，而打開以覆蓋該區域之方式配置之吹出口50B。如此一來，可有效地加熱與打開之吹出口50B對應之區域之電極棒30B及電極棒30C，而減少電漿產生部30內之區域間之產生電漿為止所需之時間之差異。FIG. 10 is a top view showing an example in which a part of the blower outlet 50B is opened based on the measurement result of the temperature of the measuring part 72 . In the situation shown in FIG. 10 , the temperature is measured by the measuring unit 72 , and it is determined that the temperature of a certain area (the upper right part of FIG. 10 ) is relatively low, and the air outlet 50B arranged to cover the area is opened. In this way, the electrode rod 30B and the electrode rod 30C in the area corresponding to the opened blowout port 50B can be effectively heated, thereby reducing the difference in the time required to generate plasma between areas in the plasma generating part 30 .
另，於圖9與圖10中，未產生電漿102之區域與打開吹出口50B之區域一致，藉由測定部72測定出之溫度相對較低之區域、與於特定之時間內未產生電漿102之區域大致一致。In addition, in FIGS. 9 and 10 , the area where the plasma 102 is not generated coincides with the area where the blower outlet 50B is opened, and the area where the temperature measured by the measuring part 72 is relatively low corresponds to the area where the plasma 102 is not generated within a specific period of time. The area of pulp 102 is roughly the same.
又，於圖10中，打開之吹出口50B為一個，但亦可打開彼此隔開之複數個吹出口50B。若為此種加熱方法，則可於複數個區域同時進行加熱，因此即使為具有多種溫度分佈之電漿產生部30，亦可有效地加熱。In addition, in FIG. 10 , only one blowing outlet 50B is opened, but a plurality of blowing outlets 50B that are spaced apart from each other may be opened. According to this heating method, heating can be performed in a plurality of areas at the same time. Therefore, even the plasma generating part 30 having various temperature distributions can be efficiently heated.
＜第2實施形態＞ 圖11係概略性顯示本實施形態之基板處理裝置100A之構成之例之側視圖。於圖11中，為了方便起見，一部分構成以透過之狀態圖示。 <Second Embodiment> FIG. 11 is a side view schematically showing an example of the structure of the substrate processing apparatus 100A according to this embodiment. In FIG. 11 , for the sake of convenience, part of the structure is shown in a transparent state.
另，圖11所示之構成亦可由圖1之腔室80包圍。又，腔室80內之壓力為大致大氣壓(例如，0.5個氣壓以上，且2個氣壓以下)。換言之，後述之電漿處理係於大氣壓進行之大氣壓電漿處理。In addition, the structure shown in FIG. 11 may also be surrounded by the chamber 80 of FIG. 1 . In addition, the pressure in the chamber 80 is approximately atmospheric pressure (for example, 0.5 atmospheric pressure or more and 2 atmospheric pressure or less). In other words, the plasma treatment described below is atmospheric pressure plasma treatment performed at atmospheric pressure.
基板處理裝置100A具備旋轉卡盤10、處理護罩12、處理液噴嘴20、處理液供給源29、閥25、及電漿產生裝置55A。電漿產生裝置55A具備：電漿產生部130，其以覆蓋整個基板W之方式配置於基板W之上方，且作為於大氣壓下產生電漿之大氣壓電漿源；交流電源40，其將交流電壓施加於電漿產生部130；加熱部50，其加熱電漿產生部130；及支持部60，其將電漿產生部130及加熱部50一體地支持。The substrate processing apparatus 100A includes a spin chuck 10, a processing shield 12, a processing liquid nozzle 20, a processing liquid supply source 29, a valve 25, and a plasma generating device 55A. The plasma generating device 55A includes: a plasma generating part 130 that is disposed above the substrate W to cover the entire substrate W and serves as an atmospheric pressure plasma source that generates plasma under atmospheric pressure; and an AC power supply 40 that generates an AC voltage. It is applied to the plasma generating part 130; the heating part 50, which heats the plasma generating part 130; and the supporting part 60, which integrally supports the plasma generating part 130 and the heating part 50.
電漿產生部130具備：板狀之介電構件32A，其包含石英等之介電質；複數個電極棒30J，其等收納於介電構件32A內，配置成梳形狀；複數個電極棒30K，其等收納於介電構件32A內，配置成梳形狀；保持部30L，其包含樹脂(例如，聚四氟乙烯(PTFE))或陶瓷等，且於各一端保持複數個電極棒30J及複數個電極棒30K；集合電極30M，其與複數個電極棒30J共通連接，包含鋁等；及集合電極30N，其與複數個電極棒30K共通連接，包含鋁等。集合電極30M與集合電極30N例如以配合後於俯視下呈圓形狀之方式配置，於該圓內，收納複數個電極棒30J及複數個電極棒30K。The plasma generating unit 130 includes: a plate-shaped dielectric member 32A containing a dielectric material such as quartz; a plurality of electrode rods 30J housed in the dielectric member 32A and arranged in a comb shape; and a plurality of electrode rods 30K. , which are accommodated in the dielectric member 32A and arranged in a comb shape; the holding portion 30L includes resin (for example, polytetrafluoroethylene (PTFE)) or ceramics, and holds a plurality of electrode rods 30J and a plurality of electrode rods 30J at each end. an electrode rod 30K; a collective electrode 30M, which is commonly connected to a plurality of electrode rods 30J, including aluminum, etc.; and a collective electrode 30N, which is commonly connected to a plurality of electrode rods 30K, including aluminum, etc. The collective electrode 30M and the collective electrode 30N are arranged, for example, in a circular shape in plan view after being coupled, and a plurality of electrode rods 30J and a plurality of electrode rods 30K are accommodated within the circle.
電極棒30J及電極棒30K係例如由鎢等形成之棒形狀。另，電極棒30J及電極棒30K之形狀並非限定於棒形狀者。又，複數個電極棒30J與複數個電極棒30K以於俯視下不重疊之方式交錯配置。即，若於俯視下觀察，則電極棒30J與電極棒30K交替地排列。The electrode rod 30J and the electrode rod 30K have a rod shape made of, for example, tungsten or the like. In addition, the shapes of the electrode rods 30J and 30K are not limited to rod shapes. Moreover, the plurality of electrode rods 30J and the plurality of electrode rods 30K are staggeredly arranged so as not to overlap in plan view. That is, when viewed from above, the electrode rods 30J and the electrode rods 30K are alternately arranged.
另一方面，於圖11所示之側視下，複數個電極棒30J與複數個電極棒30K彼此重疊配置。另，於圖11所示之側視下，複數個電極棒30J與複數個電極棒30K亦可彼此不重疊，例如，亦可於圖11之Z軸方向錯開配置。On the other hand, in the side view shown in FIG. 11 , the plurality of electrode rods 30J and the plurality of electrode rods 30K are arranged to overlap each other. In addition, in the side view shown in FIG. 11 , the plurality of electrode rods 30J and the plurality of electrode rods 30K may not overlap each other. For example, they may also be arranged staggered in the Z-axis direction of FIG. 11 .
介電構件32A係上表面及下表面無凹凸之平面形狀。因此，容易清洗於電漿處理時等產生之介電構件32A之下表面之附著物。The dielectric member 32A has a planar shape with no unevenness on the upper surface and the lower surface. Therefore, attachments on the lower surface of the dielectric member 32A generated during plasma processing or the like can be easily cleaned.
圖12係概略性顯示電漿產生部130之一部分構成之例之剖視圖。圖12與圖11之A-A'剖面對應。另，電極棒30J及電極棒30K之數量並非限定於圖12所示之數量者。FIG. 12 is a cross-sectional view schematically showing an example of a partial configuration of the plasma generating unit 130. Figure 12 corresponds to the AA' section of Figure 11 . In addition, the number of electrode rods 30J and 30K is not limited to the number shown in FIG. 12 .
如圖12所例示，於介電構件32A形成有複數個自板形狀之側面於X軸方向延伸之收納孔32B，電極棒30J及電極棒30K分別收納於對應之收納孔32B。因收納孔32B自X軸正方向及X軸負方向之介電構件32A之端部(側面)向內部交替地延伸而形成，故電極棒30J自X軸正方向側之端部***，電極棒30K自X軸負方向側之端部***。如此，各個電極棒30J及電極棒30K周圍被作為介電質之介電構件32A包圍而配置。又，如圖12所示，收納孔32B形成於與介電構件32A之下表面靠近之位置。As illustrated in FIG. 12 , the dielectric member 32A is formed with a plurality of storage holes 32B extending in the X-axis direction from the side surface of the plate shape, and the electrode rods 30J and 30K are respectively received in the corresponding storage holes 32B. Since the storage hole 32B is formed by alternately extending inward from the ends (sides) of the dielectric member 32A in the positive X-axis direction and the negative X-axis direction, the electrode rod 30J is inserted from the end in the positive X-axis direction. 30K is inserted from the end on the negative side of the X-axis. In this way, each of the electrode rods 30J and 30K is arranged to be surrounded by the dielectric member 32A as a dielectric material. Furthermore, as shown in FIG. 12 , the receiving hole 32B is formed at a position close to the lower surface of the dielectric member 32A.
若藉由交流電源40，於集合電極30M及集合電極30N之間施加交流電壓，則於連接於集合電極30M之各電極棒30J與連接於集合電極30N之各電極棒30K之間施加交流電壓。其結果，於電極棒30J與電極棒30K之間產生介電質阻擋放電。且，於該放電之放電路徑之周圍產生氣體之電漿化，形成沿著隔開電極棒30J與電極棒30K之介電構件32A之表面(包含收納孔32B之內部)2維擴展之電漿空間。此處，因收納孔32B形成於與介電構件32A之下表面靠近之位置，故電漿102主要形成於介電構件32A之下表面。When an AC voltage is applied between the collective electrode 30M and the collective electrode 30N by the AC power supply 40, an AC voltage is applied between each electrode rod 30J connected to the collective electrode 30M and each electrode rod 30K connected to the collective electrode 30N. As a result, dielectric barrier discharge occurs between the electrode rod 30J and the electrode rod 30K. And, plasma of the gas is generated around the discharge path of the discharge, forming plasma that spreads two-dimensionally along the surface (including the inside of the accommodation hole 32B) of the dielectric member 32A that separates the electrode rod 30J and the electrode rod 30K. space. Here, since the receiving hole 32B is formed close to the lower surface of the dielectric member 32A, the plasma 102 is mainly formed on the lower surface of the dielectric member 32A.
此處，於形成上述電漿空間時，亦可對電漿產生部130之下方之空間(即，基板W之上方之空間)供給例如O 2(氧)、Ne、CO 2、空氣、惰性氣體或其等之組合之氣體。惰性氣體係例如N 2或稀有氣體。稀有氣體係例如He或Ar等。 Here, when forming the above plasma space, for example, O 2 (oxygen), Ne, CO 2 , air, or inert gas may be supplied to the space below the plasma generating part 130 (that is, the space above the substrate W). or combinations thereof. Inert gas systems such as N2 or noble gases. Rare gas systems such as He or Ar, etc.
藉由電漿102之作用，於該空間附近之氣體產生活性物質。於活性物質包含具有電荷之離子、或電性呈中性之自由基等。例如，氣體為包含O 2者之情形時，藉由電漿產生部130之電漿之作用，產生作為活性物質之一種之氧自由基。 Through the action of plasma 102, active substances are generated in the gas near the space. Active materials include charged ions or electrically neutral free radicals. For example, when the gas contains O 2 , oxygen radicals, which are one of the active materials, are generated by the action of plasma in the plasma generating unit 130 .
此處，期望電漿產生部130於如上所述般產生電漿102之階段中於特定之待機位置待機，於介電構件32A之下表面適度產生均勻之電漿102後，移動至基板W附近之處理位置。若為此種態樣，則藉由於產生均勻之電漿102之狀態下使電漿102作用於基板W之表面之液膜，可進行均勻之處理。Here, it is desired that the plasma generating unit 130 waits at a specific standby position during the stage of generating the plasma 102 as described above, and then moves to the vicinity of the substrate W after appropriately generating uniform plasma 102 on the lower surface of the dielectric member 32A. processing location. In this case, by causing the plasma 102 to act on the liquid film on the surface of the substrate W in a state where uniform plasma 102 is generated, uniform processing can be performed.
另，於本實施形態中，電漿產生部130以覆蓋基板W之整個上表面之方式配置，但於電漿產生部130以僅覆蓋基板W之一部分之方式配置之情形時，亦可藉由未圖示之驅動機構，使電漿產生部130於基板W之上表面之位置隨著基板W之旋轉而沿著基板W之上表面於基板W之旋轉方向及徑向移動。In addition, in this embodiment, the plasma generating part 130 is arranged so as to cover the entire upper surface of the substrate W. However, when the plasma generating part 130 is arranged so as to cover only a part of the substrate W, the plasma generating part 130 may also be configured by The driving mechanism (not shown) causes the position of the plasma generating part 130 on the upper surface of the substrate W to move along the upper surface of the substrate W in the rotational direction and radial direction of the substrate W as the substrate W rotates.
＜關於加熱方法＞ 接著，對加熱部50之電漿產生部130之加熱方法進行說明。電漿產生部130內之各個區域之產生電漿為止(形成電漿空間為止)所需之時間係因配置於該區域之電極棒之個體差、集合電極之個體差、或該區域之熱容量之大小等而存在差異。尤其，於電漿產生部130之形成電漿空間之面積較大之情形時該差異亦變大，於電漿產生部130內之整個區域產生均勻之電漿為止所需之時間變長。 ＜About heating method＞ Next, the heating method of the plasma generating part 130 of the heating part 50 will be described. The time required for each area in the plasma generating part 130 to generate plasma (to form a plasma space) is determined by individual differences in the electrode rods arranged in the area, individual differences in the collective electrodes, or the heat capacity of the area. There are differences in size, etc. In particular, when the area of the plasma generating part 130 forming the plasma space is large, the difference becomes larger, and the time required to generate uniform plasma in the entire area within the plasma generating part 130 becomes longer.
如上所述，發明者們發現，於產生大氣壓電漿等之電漿之情形時，藉由將100℃等之高溫氣體向電漿產生部130吹附，可縮短產生電漿為止所需之時間。As described above, the inventors have found that when generating plasma such as atmospheric pressure plasma, the time required to generate plasma can be shortened by blowing high-temperature gas such as 100° C. to the plasma generating part 130 .
於本實施形態中，加熱部50於電漿產生部130產生電漿之前，加熱電漿產生部130之一部分或整體。具體而言，藉由自圖7所示之吹出口50B向電漿產生部130(例如，介電構件32A之上表面)吹出高溫氣體，而加熱電漿產生部130。In this embodiment, the heating part 50 heats a part or the whole of the plasma generating part 130 before the plasma generating part 130 generates plasma. Specifically, the plasma generating portion 130 is heated by blowing high-temperature gas from the blowing outlet 50B shown in FIG. 7 toward the plasma generating portion 130 (for example, the upper surface of the dielectric member 32A).
藉此，因於電漿產生部130及其附近之氣體被加熱之狀態下產生電漿，故可縮短於電漿產生部130內之整個區域產生電漿為止所需之時間。且，藉由縮短產生電漿為止所需之時間，各個區域之該時間之差異亦變小，可於整個區域產生均勻之電漿。Thereby, since plasma is generated in a heated state in the plasma generating part 130 and the gas in the vicinity thereof, the time required to generate plasma in the entire area within the plasma generating part 130 can be shortened. Furthermore, by shortening the time required to generate plasma, the difference in time between each area is also reduced, and uniform plasma can be generated in the entire area.
另，因於電漿產生部130產生電漿為止需要時間，故期望於進行電漿處理之前之步驟，例如，將液膜101A(參照圖5)形成於基板W之上表面之步驟之期間，於電漿產生部130位於待機位置之狀態下開始該加熱。In addition, since it takes time for the plasma generation unit 130 to generate plasma, it is desirable to perform the step before performing the plasma treatment, for example, during the step of forming the liquid film 101A (see FIG. 5 ) on the upper surface of the substrate W. This heating is started with the plasma generating part 130 in the standby position.
又，亦可使用圖7之測定部72測定電漿產生部130內之複數個區域之溫度，基於該測定結果，特定使用加熱部50加熱之區域。Alternatively, the measuring unit 72 in FIG. 7 may be used to measure the temperatures of a plurality of areas in the plasma generating unit 130, and based on the measurement results, the area to be heated by the heating unit 50 may be specified.
圖13係概略性顯示電漿產生部130之一部分構成之例之俯視圖。於圖13中，為了方便起見，一部分構成以透過之狀態圖示。於圖13所示之電漿產生部130，因即使於對複數個電極棒30J及複數個電極棒30K同樣施加電壓之情形時，產生電漿為止所需之時間亦產生差異，故於電漿產生部130內之整個區域產生電漿為止所需之時間變長。FIG. 13 is a plan view schematically showing an example of a partial configuration of the plasma generating unit 130. In FIG. 13 , for the sake of convenience, part of the structure is shown in a transparent state. In the plasma generating part 130 shown in FIG. 13 , even when the voltage is applied to the plurality of electrode rods 30J and the plurality of electrode rods 30K in the same manner, the time required until plasma is generated is different. Therefore, in the plasma generation part 130 The time required until plasma is generated in the entire area within the generating part 130 becomes longer.
另一方面，作為產生電漿為止所需之時間變長之原因之一，考慮存在產生電漿之該區域之溫度相對難以上升之部位。因此，首先，使用圖7之測定部72測定產生電漿為止之電漿產生部130內之各個區域之溫度，預先特定溫度相對較低之區域。且，藉由打開與該區域對應之圖7所示之吹出口50B，將暖風吹附至該區域(具體而言，位於該區域之介電構件32A之上表面)，而選擇性地加熱與電漿產生部130內之一部分區域對應之該區域。藉此，可減少電漿產生部130內之區域間之產生電漿為止所需之時間之差異，而有效地縮短於電漿產生部130內之整個區域產生均勻之電漿為止所需之時間。On the other hand, one of the reasons why the time required for generating plasma becomes long is that there is a location where the temperature of the region where plasma is generated is relatively difficult to rise. Therefore, first, the temperature of each area in the plasma generating unit 130 until plasma is generated is measured using the measuring unit 72 in FIG. 7 , and an area with a relatively low temperature is specified in advance. Furthermore, by opening the air outlet 50B shown in FIG. 7 corresponding to the area, warm air is blown to the area (specifically, the upper surface of the dielectric member 32A located in the area), thereby selectively heating and A partial area in the plasma generating part 130 corresponds to this area. Thereby, the difference in the time required to generate plasma between regions within the plasma generating part 130 can be reduced, and the time required to generate uniform plasma in the entire region within the plasma generating part 130 can be effectively shortened. .
＜關於藉由以上所記載之實施形態而產生之效果＞ 接著，顯示藉由以上所記載之實施形態而產生之效果之例。另，於以下之說明中，雖基於以上所記載之實施形態中例示之具體構成而記載該效果，但於產生同樣效果之範圍內，亦可與本案說明書所例示之其他具體構成置換。即，以下為了方便起見，有僅以對應關聯之具體構成中之任一者為代表記載之情形，但亦可置換為代表記載之具體構成對應關聯之其他具體構成。 <About the effects produced by the embodiments described above> Next, examples of effects produced by the above-described embodiments will be shown. In addition, in the following description, although this effect is described based on the specific structure illustrated in the embodiment described above, it may be replaced with other specific structure illustrated in this specification within the range which produces the same effect. That is, for the sake of convenience below, only any one of the specific components of the corresponding relationship may be used as a representative description, but the representative description may be replaced with other specific components that constitute the corresponding relationship.
根據以上所記載之實施形態，基板處理裝置100具備電漿產生部30、及加熱部50。基板處理裝置100產生電漿，對基板W進行處理。加熱部50加熱電漿產生部30。此處，加熱部50於在電漿產生部30產生電漿之前，加熱電漿產生部30。According to the embodiment described above, the substrate processing apparatus 100 includes the plasma generating unit 30 and the heating unit 50 . The substrate processing apparatus 100 generates plasma to process the substrate W. The heating unit 50 heats the plasma generating unit 30 . Here, the heating unit 50 heats the plasma generating unit 30 before the plasma generating unit 30 generates plasma.
根據此種構成，因於電漿產生部30及其附近之氣體被加熱之狀態下產生電漿，故可縮短在電漿產生部30內之整個區域產生電漿為止所需之時間。且，藉由縮短產生電漿為止所需之時間，各個區域之該時間之差異亦變小，可於整個區域產生均勻之電漿。According to this structure, since plasma is generated in a heated state in the plasma generating part 30 and the gas in the vicinity thereof, the time required to generate plasma in the entire area within the plasma generating part 30 can be shortened. Furthermore, by shortening the time required to generate plasma, the difference in time between each area is also reduced, and uniform plasma can be generated in the entire area.
另，即使於對上述構成適當追加本案說明書所例示之其他構成，即，適當追加未作為上述構成提及之本案說明書中之其他構成之情形時，亦可產生同樣之效果。In addition, the same effect can be produced even when other components exemplified in the specification of this application are appropriately added to the above-mentioned components, that is, when other components in the specification of this application that are not mentioned as the above-mentioned components are appropriately added.
又，根據以上所記載之實施形態，電漿產生裝置具備板狀之介電構件32A。於介電構件32A形成自介電構件32A之側面延伸至介電構件32A之內部之複數個收納孔32B。且，複數個電漿電極(例如，電極棒30J及電極棒30K)之各者藉由被收納於收納孔32B，而由作為介電質之介電構件32A包圍。根據此種構成，因可於上下表面無凹凸形狀之介電構件32A內收納電極棒30J及電極棒30K，故於電漿處理時等即使於介電構件32A之下表面產生附著物之情形時，亦容易清洗介電構件32A之下表面之附著物。Furthermore, according to the embodiment described above, the plasma generating device includes the plate-shaped dielectric member 32A. A plurality of receiving holes 32B extending from the side surface of the dielectric member 32A to the inside of the dielectric member 32A are formed in the dielectric member 32A. Furthermore, each of the plurality of plasma electrodes (for example, the electrode rod 30J and the electrode rod 30K) is surrounded by the dielectric member 32A as a dielectric material by being accommodated in the accommodation hole 32B. According to this structure, since the electrode rod 30J and the electrode rod 30K can be accommodated in the dielectric member 32A with no uneven upper and lower surfaces, it is possible to prevent adhesion on the lower surface of the dielectric member 32A during plasma processing, etc. , it is also easy to clean the attachments on the lower surface of the dielectric member 32A.
又，根據以上所記載之實施形態，電漿產生部30具備被施加電壓之複數個電極棒30B及電極棒30C。此處，本發明之「電漿電極」係與電極棒30B或電極棒30C對應者。加熱部50加熱複數個電漿電極中之一部分電漿電極。根據此種構成，因於選擇性地加熱複數個電漿電極中之一部分之狀態下產生電漿，故可減少電漿產生部30內之區域間產生電漿為止所需之時間之差異。Furthermore, according to the above-described embodiment, the plasma generating unit 30 includes a plurality of electrode rods 30B and electrode rods 30C to which a voltage is applied. Here, the "plasma electrode" of the present invention corresponds to the electrode rod 30B or the electrode rod 30C. The heating unit 50 heats some of the plasma electrodes. According to this structure, since plasma is generated while selectively heating a part of the plurality of plasma electrodes, the difference in the time required to generate plasma between regions in the plasma generating part 30 can be reduced.
又，根據以上所記載之實施形態，加熱部50配置於電漿產生部30之附近。根據此種構成，加熱部50可有效率地加熱電漿產生部30。Furthermore, according to the embodiment described above, the heating unit 50 is arranged near the plasma generating unit 30 . According to this configuration, the heating unit 50 can efficiently heat the plasma generating unit 30 .
又，根據以上所記載之實施形態，加熱部50具備氣體流路50A、及複數個吹出口50B。於氣體流路50A中流動自用以供給氣體之氣體供給源70供給之氣體。吹出口50B設置於氣體流路50A之端部。又，吹出口50B可開閉。且，加熱部50藉由選擇性地打開複數個吹出口50B中之至少一部分，而將氣體吹附至電漿產生部30。根據此種構成，藉由自各個吹出口50B選擇性地吹附氣體，可加熱電漿產生部30內之任意區域。Moreover, according to the embodiment described above, the heating part 50 is provided with the gas flow path 50A and the plurality of blowing ports 50B. The gas supplied from the gas supply source 70 for supplying the gas flows through the gas flow path 50A. The blower outlet 50B is provided at the end of the gas flow path 50A. In addition, the blower outlet 50B can be opened and closed. Furthermore, the heating unit 50 blows the gas to the plasma generating unit 30 by selectively opening at least part of the plurality of blowing ports 50B. According to this structure, by selectively blowing gas from each blowing port 50B, it is possible to heat an arbitrary area in the plasma generating part 30 .
又，根據以上所記載之實施形態，加熱部50藉由打開彼此隔開之複數個吹出口50B，而將氣體吹附至電漿產生部30。根據此種構成，因可於複數個區域同時進行加熱，故即使為具有多種溫度分佈之電漿產生部30，亦可有效地加熱，可縮短於電漿產生部30內之整個區域產生均勻之電漿為止所需之時間。Furthermore, according to the above-described embodiment, the heating unit 50 blows gas to the plasma generating unit 30 by opening the plurality of blowing ports 50B that are spaced apart from each other. According to this structure, since heating can be performed in a plurality of areas at the same time, even the plasma generating part 30 with various temperature distributions can be heated efficiently, and the entire area in the plasma generating part 30 can be shortened and uniformly generated. The time required to reach the plasma.
又，根據以上所記載之實施形態，電漿產生裝置具備測定部72。測定部72對電漿產生部30內之每個區域測定溫度。且，加熱部50加熱藉由測定部72測定出之溫度相對較低之區域。根據此種構成，藉由選擇性地加熱因溫度較低從而產生電漿為止所需之時間變長之區域，可減少電漿產生部30內之區域間產生電漿為止所需之時間之差異，而有效地縮短於電漿產生部30內之整個區域產生均勻之電漿為止所需之時間。Furthermore, according to the above-described embodiment, the plasma generating device includes the measuring unit 72 . The measuring unit 72 measures the temperature of each area in the plasma generating unit 30 . Furthermore, the heating unit 50 heats a region where the temperature measured by the measuring unit 72 is relatively low. According to this structure, by selectively heating a region where the time required to generate plasma becomes longer due to a lower temperature, it is possible to reduce the difference in the time required to generate plasma between regions in the plasma generating section 30 . , and effectively shorten the time required until uniform plasma is generated in the entire area within the plasma generating part 30 .
根據以上所記載之實施形態，於電漿產生方法中具備以下步驟：加熱用以產生電漿並進行處理之電漿產生部30；及使用已加熱之電漿產生部30產生電漿。According to the embodiment described above, the plasma generation method includes the following steps: heating the plasma generation part 30 for generating and processing plasma; and generating plasma using the heated plasma generation part 30.
根據此種構成，因於電漿產生部30及其附近之氣體被加熱之狀態下產生電漿，故可縮短於電漿產生部30內之整個區域產生電漿為止所需之時間。且，藉由縮短產生電漿為止所需之時間，各個區域之該時間之差異亦變小，可於整個區域產生均勻之電漿。According to this structure, since plasma is generated in a heated state in the plasma generating part 30 and the gas in its vicinity, the time required to generate plasma in the entire area within the plasma generating part 30 can be shortened. Furthermore, by shortening the time required to generate plasma, the difference in time between each area is also reduced, and uniform plasma can be generated in the entire area.
另，於無特別限制之情形時，可變更進行各個處理之順序。In addition, if there are no special restrictions, the order in which each process is performed may be changed.
又，即使於對上述構成適當追加本案說明書所例示之其他構成之情形時，即，適當追加未作為上述構成提及之本案說明書中之其他構成之情形時，亦可產生同樣之效果。Furthermore, the same effect can be produced even when other components exemplified in the specification of this application are appropriately added to the above-mentioned components, that is, when other components in the specification of this application that are not mentioned as the above-mentioned components are appropriately added.
又，根據以上所記載之實施形態，於電漿產生方法中具備對電漿產生部30內之每個區域測定溫度之步驟。且，加熱電漿產生部30之步驟係加熱測定出之溫度相對較低之區域之步驟。根據此種構成，藉由選擇性地加熱因溫度較低而產生電漿為止所需之時間變長之區域，可減少電漿產生部30內之區域間之產生電漿為止所需之時間之差異，而有效地縮短於電漿產生部30內之整個區域產生均勻之電漿為止所需之時間。Furthermore, according to the embodiment described above, the plasma generation method includes a step of measuring the temperature of each area in the plasma generation unit 30 . Furthermore, the step of heating the plasma generating part 30 is a step of heating a region where the measured temperature is relatively low. According to this structure, by selectively heating the area where the time required for plasma generation becomes longer due to low temperature, it is possible to reduce the time required for plasma generation between areas within the plasma generating section 30 . The difference effectively shortens the time required until uniform plasma is generated in the entire area within the plasma generating part 30 .
＜關於以上所記載之實施形態之變化例＞ 於本實施形態中，加熱部以於俯視下覆蓋整個電漿產生部30之方式設置，但加熱部亦可以於俯視下僅覆蓋電漿產生部30之一部分之方式設置。於該情形時，期望藉由測定部72測定溫度而預先特定溫度相對較低之區域，於該區域之附近設置加熱部。又，若加熱部相對於電漿產生部30可裝卸地設置，則於溫度相對較低之區域不同之情形時，亦可對應。 ＜Examples of modifications to the embodiments described above＞ In this embodiment, the heating part is provided so as to cover the entire plasma generating part 30 in a plan view. However, the heating part may be provided so as to cover only a part of the plasma generating part 30 in a plan view. In this case, it is desirable to measure the temperature by the measuring unit 72 to identify an area with a relatively low temperature in advance, and to provide a heating unit near the area. In addition, if the heating part is detachably provided with respect to the plasma generating part 30, it can also cope with the situation where the temperature is relatively low.
又，於本實施形態中，加熱部藉由吹附暖風而加熱電漿產生部30，但加熱方法並非限定於此種方法者，例如，亦可藉由僅具備電熱式加熱器或發熱燈之加熱部加熱電漿產生部30。Furthermore, in this embodiment, the heating unit heats the plasma generating unit 30 by blowing warm air. However, the heating method is not limited to this method. For example, it may also be provided with only an electric heater or a heating lamp. The heating part heats the plasma generating part 30 .
又，於本實施形態中，雖顯示由電漿產生部30之電漿之作用產生之活性物質供給至液膜101A之情形，但亦可為該活性物質直接作用於未形成液膜101A之基板W之上表面之情形。Furthermore, in this embodiment, the active material generated by the action of plasma in the plasma generating unit 30 is supplied to the liquid film 101A. However, the active material may directly act on a substrate on which the liquid film 101A is not formed. The situation on the surface above W.
於以上所記載之實施形態中，雖有關於各個構成要件之材質、材料、尺寸、形狀、相對配置關係或實施條件等亦記載之情形，但該等於所有態樣中為一例，並非限定者。In the above-described embodiments, although the material, material, size, shape, relative arrangement relationship, implementation conditions, etc. of each component are also described, these are examples in all embodiments and are not limiting.
因此，於本案說明書所揭示之技術範圍內設想未例示之無數之變化例及均等物。例如，包含將至少1個構成要件變形、追加或省略之情形。Therefore, numerous variations and equivalents that are not illustrated are envisaged within the technical scope disclosed in this specification. For example, this includes deforming, adding, or omitting at least one component.
又，於以上所記載之實施形態中，未特別指定記載材料名等之情形時，只要不產生矛盾，則於該材料包含其他添加物，例如，包含合金等。In addition, in the above-described embodiments, when the name of the material is not specified, other additives, for example, alloys, etc., may be included in the material as long as there is no contradiction.
1:基板處理系統 10:旋轉卡盤 10A:旋轉基台 10C:旋轉軸 10D:旋轉馬達 12:處理護罩 20:處理液噴嘴 25:閥 29:處理液供給源 30:電漿產生部 30A:介電構件 30B:電極棒 30C:電極棒 30D:保持部 30E:介電管 30F:介電管 30G:集合電極 30H:集合電極 30J:電極棒 30K:電極棒 30L:保持部 30M:集合電極 30N:集合電極 32A:介電構件 32B:收納孔 40:交流電源 50:加熱部 50A:氣體流路 50B:吹出口 50C:擋板構件 50D:排氣口 55:電漿產生裝置 55A:電漿產生裝置 60:支持部 60A:氣體流路 70:氣體供給源 72:測定部 80:腔室 90:控制部 91:CPU 92:ROM 93:RAM 94:記憶裝置 94P:處理程式 95:匯流排線 96:輸入部 97:顯示部 98:通信部 100:基板處理裝置 100A:基板處理裝置 101:處理液 101A:液膜 102:電漿 130:電漿產生部 400:裝載埠 402:分度機器人 404:基板載置部 406:中心機器人 C:載具 ST01～ST05:步驟 W:基板 Z1:旋轉軸線 1:Substrate processing system 10: Rotating chuck 10A: Rotating abutment 10C:Rotation axis 10D: Rotary motor 12: Handle the shield 20: Treatment fluid nozzle 25:Valve 29: Treatment fluid supply source 30:Plasma generation part 30A: Dielectric components 30B:Electrode rod 30C:Electrode rod 30D: Holding part 30E: Dielectric tube 30F: Dielectric tube 30G:Collection electrode 30H:Collection electrode 30J:Electrode rod 30K:Electrode rod 30L: Holding part 30M:Collection electrode 30N:Collection electrode 32A: Dielectric components 32B: Storage hole 40:AC power supply 50:Heating part 50A:Gas flow path 50B: Blowing outlet 50C:Baffle member 50D:Exhaust port 55: Plasma generating device 55A: Plasma generating device 60:Support Department 60A: Gas flow path 70:Gas supply source 72: Measurement Department 80: Chamber 90:Control Department 91:CPU 92:ROM 93: RAM 94:Memory device 94P:Processor 95:Bus cable 96:Input part 97:Display part 98:Ministry of Communications 100:Substrate processing device 100A:Substrate processing device 101: Treatment fluid 101A: Liquid film 102:Plasma 130:Plasma generation part 400: Loading port 402: Indexing robot 404:Substrate mounting part 406:Center Robot C:Vehicle ST01～ST05: steps W: substrate Z1: axis of rotation
圖1係概略性顯示關於實施形態之基板處理系統之構成之例之俯視圖。 圖2係概略性顯示圖1所示之控制部之構成之例之圖。 圖3係概略性顯示實施形態之基板處理裝置之構成之例之側視圖。 圖4係顯示基板處理裝置之動作之例之流程圖。 圖5係用以說明關於實施形態之基板處理裝置之動作之圖。 圖6係用以說明關於實施形態之基板處理裝置之動作之圖。 圖7係具體性顯示加熱部及其周邊構造之構成之例之圖。 圖8係顯示於電漿產生部內之整個區域產生電漿為止所需之時間之圖。 圖9係顯示於電漿產生部內之一部分區域產生電漿之狀態之俯視圖。 圖10係顯示基於測定部之溫度之測定結果，打開一部分吹出口之情形之例之俯視圖。 圖11係概略性顯示實施形態之基板處理裝置之構成之例之側視圖。 圖12係概略性顯示電漿產生部之一部分構成之例之剖視圖。 圖13係概略性顯示電漿產生部之一部分構成之例之俯視圖。 FIG. 1 is a plan view schematically showing an example of the configuration of the substrate processing system according to the embodiment. FIG. 2 is a diagram schematically showing an example of the structure of the control unit shown in FIG. 1 . FIG. 3 is a side view schematically showing an example of the structure of the substrate processing apparatus according to the embodiment. FIG. 4 is a flowchart showing an example of operation of the substrate processing apparatus. FIG. 5 is a diagram for explaining the operation of the substrate processing apparatus according to the embodiment. FIG. 6 is a diagram for explaining the operation of the substrate processing apparatus according to the embodiment. FIG. 7 is a diagram specifically showing an example of the structure of the heating portion and its peripheral structure. FIG. 8 is a graph showing the time required until plasma is generated in the entire area within the plasma generating section. FIG. 9 is a top view showing a state in which plasma is generated in a partial area within the plasma generating section. FIG. 10 is a top view showing an example of opening a part of the blower outlet based on the measurement result of the temperature of the measuring part. FIG. 11 is a side view schematically showing an example of the structure of the substrate processing apparatus according to the embodiment. FIG. 12 is a cross-sectional view schematically showing an example of a part of the plasma generating section. FIG. 13 is a plan view schematically showing an example of a part of the plasma generating section.
10:旋轉卡盤 10: Rotating chuck
10A:旋轉基台 10A: Rotating abutment
10C:旋轉軸 10C:Rotation axis
10D:旋轉馬達 10D: Rotary motor
12:處理護罩 12: Handle the shield
20:處理液噴嘴 20: Treatment fluid nozzle
25:閥 25:Valve
29:處理液供給源 29: Treatment fluid supply source
30:電漿產生部 30:Plasma generation part
30A:介電構件 30A: Dielectric components
30B:電極棒 30B:Electrode rod
30C:電極棒 30C:Electrode rod
30D:保持部 30D: Holding part
30E:介電管 30E: Dielectric tube
30F:介電管 30F: Dielectric tube
30G:集合電極 30G:Collection electrode
30H:集合電極 30H:Collection electrode
40:交流電源 40:AC power supply
50:加熱部 50:Heating part
55:電漿產生裝置 55: Plasma generating device
60:支持部 60:Support Department
100:基板處理裝置 100:Substrate processing device
W:基板 W: substrate
Z1:旋轉軸線 Z1: axis of rotation
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