TWI847105B - Substrate processing method - Google Patents
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Abstract
本發明之課題在於提供一種於基板處理中適切地產生電漿之作用。 The subject of the present invention is to provide a method for appropriately generating plasma in substrate processing.
本發明之基板處理方法包含下述步序：於處理空間內水平地保持基板；將電漿產生裝置配置於水平地保持之基板之上方，該電漿產生裝置包含由介電體被覆之複數個電漿電極，對該電漿電極施加電壓而產生電漿；藉由電漿產生裝置產生大氣壓電漿；於水平地保持之基板之上表面形成處理液之液膜；及使電漿產生裝置與基板相對移動至被覆電漿電極之介電體與液膜之間之距離為0.9mm以上、且2.3mm以下之位置，使大氣壓電漿作用於處理液，而對基板進行處理。 The substrate processing method of the present invention includes the following steps: holding the substrate horizontally in a processing space; arranging a plasma generating device above the horizontally held substrate, the plasma generating device including a plurality of plasma electrodes coated by a dielectric, applying voltage to the plasma electrodes to generate plasma; generating atmospheric pressure plasma by the plasma generating device; forming a liquid film of a processing liquid on the upper surface of the horizontally held substrate; and moving the plasma generating device and the substrate relative to each other to a position where the distance between the dielectric coating the plasma electrode and the liquid film is greater than 0.9 mm and less than 2.3 mm, so that the atmospheric pressure plasma acts on the processing liquid to process the substrate.
Description
本案說明書所揭示之技術係關於一種電漿處理。 The technology disclosed in this case specification is related to a plasma treatment.
自先前以來，業界曾提案去除形成於基板之上表面之阻劑膜(被膜)之技術。例如，於專利文獻1中曾揭示將硫酸及過氧化氫溶液之混合液供給至基板之上表面，使用在該混合液中產生之卡洛酸，去除形成於基板之上表面之阻劑膜之技術。 Previously, the industry has proposed a technology for removing the resist film (film) formed on the upper surface of the substrate. For example, Patent Document 1 discloses a technology for supplying a mixed solution of sulfuric acid and hydrogen peroxide solution to the upper surface of the substrate and using carboxylic acid generated in the mixed solution to remove the resist film formed on the upper surface of the substrate.
[專利文獻1]日本特開2020-88208號公報 [Patent Document 1] Japanese Patent Publication No. 2020-88208
[專利文獻2]日本特開2020-4561號公報 [Patent Document 2] Japanese Patent Publication No. 2020-4561
[專利文獻3]日本特開2019-61759號公報 [Patent Document 3] Japanese Patent Publication No. 2019-61759
另一方面，作為環境負載較上述之技術為小之替代技術，於專利文獻2、3中曾揭示藉由以大氣壓電漿產生活性物種，使該活性物種溶解於覆蓋基板之上表面之液膜，而將阻劑膜剝離之技術。根據該技術，可於不使用過氧化氫溶液下去除阻劑膜。 On the other hand, as an alternative technology with less environmental load than the above-mentioned technology, patent documents 2 and 3 have disclosed a technology for stripping the resist film by generating active species with atmospheric pressure plasma and dissolving the active species in a liquid film covering the upper surface of the substrate. According to this technology, the resist film can be removed without using a hydrogen peroxide solution.
此處，由於電漿之作用依存於液膜與電漿電極之間之距離，故於上述之處理中有改善之餘地。又，針對裝置對於在電漿處理時產生之熱之耐熱性亦有改善之餘地。 Here, since the effect of plasma depends on the distance between the liquid film and the plasma electrode, there is room for improvement in the above-mentioned treatment. In addition, there is room for improvement in the heat resistance of the device to the heat generated during plasma treatment.
本案說明書所揭示之技術係鑒於如以上所記載之問題而完成者，係用於在基板處理中適切地進行電漿處理之技術。 The technology disclosed in this specification is developed in view of the problems described above, and is a technology for appropriately performing plasma treatment in substrate processing.
本案說明書所揭示之技術之第1態樣之基板處理方法係於大氣壓之處理空間內對基板進行處理者，且包含下述步序：於前述處理空間內水平地保持前述基板；將電漿產生裝置配置於前述水平地保持之前述基板之上方，該電漿產生裝置包含由介電體被覆之複數個電漿電極，對該電漿電極施加電壓而產生電漿；藉由前述電漿產生裝置，產生大氣壓電漿；於前述水平地保持之前述基板之上表面形成處理液之液膜；及使前述電漿產生裝置與前述基板相對移動至被覆前述電漿電極之前述介電體與前述液膜之間之距離為0.9mm以上、且2.3mm以下之位置，使前述大氣壓電漿作用於 前述處理液，而對前述基板進行處理。 The first aspect of the substrate processing method disclosed in the specification of this case is to process the substrate in a processing space under atmospheric pressure, and includes the following steps: horizontally holding the substrate in the processing space; arranging a plasma generating device above the horizontally held substrate, the plasma generating device including a plurality of plasma electrodes coated with a dielectric, applying a voltage to the plasma electrodes to generate plasma; The plasma generating device generates atmospheric pressure plasma; forms a liquid film of the processing liquid on the upper surface of the substrate held horizontally; and moves the plasma generating device relative to the substrate to a position where the distance between the dielectric covering the plasma electrode and the liquid film is greater than 0.9 mm and less than 2.3 mm, so that the atmospheric pressure plasma acts on the processing liquid to process the substrate.
本案說明書所揭示之技術之第2態樣之基板處理方法係於大氣壓之處理空間內對基板進行處理者，且包含下述步序：於前述處理空間內水平地保持前述基板；將電漿產生裝置配置於前述水平地保持之前述基板之上方，該電漿產生裝置包含複數個電漿電極，對該電漿電極施加電壓而產生電漿，該等複數個電漿電極被收容於形成有複數個收容孔之介電體之前述收容孔；藉由前述電漿產生裝置，產生大氣壓電漿；於前述水平地保持之前述基板之上表面形成處理液之液膜；及使前述電漿產生裝置與前述基板相對移動至前述介電體之下表面與前述液膜之間之距離為2.3mm以上、且3.8mm以下之位置，使前述大氣壓電漿作用於250℃以上之前述處理液，而對前述基板進行處理。 The second aspect of the substrate processing method disclosed in the specification of this case is to process the substrate in a processing space under atmospheric pressure, and includes the following steps: horizontally holding the substrate in the processing space; arranging a plasma generating device above the horizontally held substrate, the plasma generating device including a plurality of plasma electrodes, applying voltage to the plasma electrodes to generate plasma, the plurality of plasma electrodes being received in a chamber having a plurality of receiving holes; The aforementioned receiving hole of the dielectric body; generating atmospheric pressure plasma by the aforementioned plasma generating device; forming a liquid film of the processing liquid on the upper surface of the aforementioned substrate held horizontally; and moving the aforementioned plasma generating device and the aforementioned substrate relative to each other to a position where the distance between the lower surface of the aforementioned dielectric body and the aforementioned liquid film is greater than 2.3 mm and less than 3.8 mm, so that the aforementioned atmospheric pressure plasma acts on the aforementioned processing liquid at a temperature of more than 250°C, thereby processing the aforementioned substrate.
本案說明書所揭示之技術之第3態樣之基板處理方法係於大氣壓之處理空間內對基板進行處理者，且包含下述步序：於前述處理空間內水平地保持前述基板；將電漿產生裝置配置於前述水平地保持之前述基板之上方，該電漿產生裝置包含複數個電漿電極，對該電漿電極施加電壓而產生電漿，該等複數個電漿電極被收容於形成有複數個收容孔之介電體之前述收容孔；藉由前述電漿產生裝置，產生大氣壓電漿；於前述水平地保持之前述基板之上表面形成處理液之液膜；及使前述電漿產生裝置與前述基板相對移動至前述介電體之下表面與前述液膜之間之距離為2.3mm以上、且2.8mm以下之位置，使前述大氣壓電漿作用於200℃以上且未達250℃之前述處理液，而對前述基板進行處理。 The third aspect of the substrate processing method disclosed in the specification of this case is to process the substrate in a processing space under atmospheric pressure, and includes the following steps: horizontally holding the substrate in the processing space; arranging a plasma generating device above the horizontally held substrate, the plasma generating device including a plurality of plasma electrodes, applying voltage to the plasma electrodes to generate plasma, the plurality of plasma electrodes being received in a dielectric body having a plurality of receiving holes formed therein The aforementioned receiving hole; generating atmospheric pressure plasma by the aforementioned plasma generating device; forming a liquid film of the processing liquid on the upper surface of the aforementioned substrate held horizontally; and moving the aforementioned plasma generating device and the aforementioned substrate relative to each other to a position where the distance between the lower surface of the aforementioned dielectric and the aforementioned liquid film is greater than 2.3 mm and less than 2.8 mm, so that the aforementioned atmospheric pressure plasma acts on the aforementioned processing liquid at a temperature greater than 200°C and less than 250°C, thereby processing the aforementioned substrate.
本案說明書所揭示之技術之第4態樣之基板處理方法係如第1至3中任一態樣之基板處理方法者，其中形成前述液膜之步序係形成前述處理液之膜厚為0.2mm之前述液膜之步序。 The substrate processing method of the fourth aspect of the technology disclosed in the specification of this case is a substrate processing method of any of the aspects 1 to 3, wherein the step of forming the aforementioned liquid film is the step of forming the aforementioned liquid film with a film thickness of 0.2 mm of the aforementioned processing liquid.
本案說明書所揭示之技術之第5態樣之基板處理方法係如第1至4中任一態樣之基板處理方法者，其中前述處理液為硫酸。 The substrate processing method of the fifth aspect of the technology disclosed in the specification of this case is a substrate processing method of any aspect 1 to 4, wherein the aforementioned processing liquid is sulfuric acid.
本案說明書所揭示之技術之第6態樣之基板處理方法係如第1至5中任一態樣之基板處理方法者，其中形成前述液膜之步序係於形成於前述基板之前述上表面之被膜之上表面形成前述液膜之步序，對前述基板進行處理之步序係使前述被膜剝離之步序。 The sixth aspect of the substrate processing method disclosed in the specification of this case is a substrate processing method as in any of aspects 1 to 5, wherein the step of forming the aforementioned liquid film is a step of forming the aforementioned liquid film on the upper surface of the film formed on the aforementioned upper surface of the aforementioned substrate, and the step of processing the aforementioned substrate is a step of peeling off the aforementioned film.
電漿產生裝置之第1態樣具備：複數個第1電極構件，其等各自沿著長度方向延伸，排列設置於與前述長度方向交叉之排列方向上；及複數個第2電極構件，其等在自與前述排列方向及前述長度方向正交之方向觀察之俯視下，分別設置於前述複數個第1電極構件相互之間；且前述複數個第1電極構件與前述複數個第2電極構件相互之間之節距設定為前述複數個第1電極構件及前述複數個第2電極構件之溫度為600度以下。 The first aspect of the plasma generating device comprises: a plurality of first electrode components, each of which extends along the length direction and is arranged in an arrangement direction intersecting the length direction; and a plurality of second electrode components, each of which is arranged between the plurality of first electrode components when viewed from a top view from a direction orthogonal to the arrangement direction and the length direction; and the pitch between the plurality of first electrode components and the plurality of second electrode components is set so that the temperature of the plurality of first electrode components and the plurality of second electrode components is below 600 degrees.
電漿產生裝置之第2態樣係如第1態樣之電漿產生裝置者，其中在前述複數個第1電極構件與前述複數個第2電極構件之間施加10kV以上之電壓。 The second aspect of the plasma generating device is the plasma generating device of the first aspect, wherein a voltage of 10 kV or more is applied between the plurality of first electrode components and the plurality of second electrode components.
電漿產生裝置之第3態樣係如第1或第2態樣之電漿產生裝置者，其中前述複數個第1電極構件及前述複數個第2電極構件係由鎢形成。 The third aspect of the plasma generating device is a plasma generating device as in the first or second aspect, wherein the plurality of first electrode components and the plurality of second electrode components are formed of tungsten.
電漿產生裝置之第4態樣係如第1至第3中任一態樣之電漿產生裝置者，其進一步具備介電構件，該介電構件具有：複數個第1孔，其等分別被***前述複數個第1電極構件；及複數個第2孔，其等分別被***前述複數個第2電極構件。 The fourth aspect of the plasma generating device is a plasma generating device as in any one of the first to third aspects, further comprising a dielectric component, the dielectric component having: a plurality of first holes, each of which is respectively inserted into the plurality of first electrode components; and a plurality of second holes, each of which is respectively inserted into the plurality of second electrode components.
電漿產生裝置之設計方法之第1態樣包含下述步序：決定電漿產生裝置之溫度之容許值，該電漿產生裝置包含：複數個第1電極構件，其等各自沿著長度方向延伸，排列設置於與前述長度方向交叉之排列方向上；及複數個第2電極構件，其等在自與前述排列方向及前述長度方向正交之方向觀察之俯視下，分別設置於前述複數個第1電極構件相互之間；以及前述容許值越高，則將前述複數個第1電極構件與前述複數個第2電極構件相互之間之節距定為越窄。 The first aspect of the design method of a plasma generating device includes the following steps: determining the allowable value of the temperature of the plasma generating device, the plasma generating device including: a plurality of first electrode components, each extending along the length direction and arranged in an arrangement direction intersecting the length direction; and a plurality of second electrode components, each arranged between the plurality of first electrode components when viewed from a top view from a direction orthogonal to the arrangement direction and the length direction; and the higher the allowable value, the narrower the pitch between the plurality of first electrode components and the plurality of second electrode components.
電漿產生裝置之設計方法之第2態樣包含下述步序：以前述電漿產生裝置產生之電漿之發光強度為特定強度以上之方式決定對電漿產生裝置供給之電力，作為基準電力，該電漿產生裝置包含：複數個第1電極構件，其等各自沿著長度方向延伸，排列設置於與前述長度方向交叉之排列方向上；及複數個第2電極構件，其等在自與前述排列方向及前述長度方向正交之方向觀察之俯視下，分別設置於前述複數個第1電極構件相互之間； 以及基於前述基準電力、及前述電漿產生裝置之溫度之容許值，決定前述複數個第1電極構件與前述複數個第2電極構件相互之間之節距。 The second aspect of the design method of the plasma generating device includes the following steps: determining the power supplied to the plasma generating device in such a manner that the luminescence intensity of the plasma generated by the plasma generating device is above a specific intensity as a reference power, the plasma generating device including: a plurality of first electrode components, each of which extends along the length direction and is arranged in an arrangement direction intersecting the length direction; and a plurality of second electrode components, each of which is arranged between the plurality of first electrode components when viewed from a top view from a direction orthogonal to the arrangement direction and the length direction; and determining the pitch between the plurality of first electrode components and the plurality of second electrode components based on the reference power and the allowable value of the temperature of the plasma generating device.
根據本案說明書所記載之上述之技術態樣，可適切地進行電漿處理。 According to the above technical aspects described in the specification of this case, plasma treatment can be appropriately performed.
又，與本案說明書所揭示之技術相關聯之目的、特徵、層面、優點藉由以下所示之詳細說明與附圖而更明瞭。 In addition, the purpose, features, aspects, and advantages associated with the technology disclosed in this specification will be more clearly understood through the detailed description and attached figures shown below.
a1,b900:基板處理系統 a1,b900: Substrate processing system
a10:旋轉卡盤 a10: Rotating chuck
a10A:旋轉基座 a10A: Rotating base
a10C:旋轉軸 a10C: Rotation axis
a10D:旋轉馬達 a10D: Rotary motor
a12:處理杯 a12: Processing cup
a20:處理液噴嘴 a20: Treatment fluid nozzle
a25:閥 a25:valve
a29:處理液供給源 a29: Treatment fluid supply source
a30:電漿處理部 a30: Plasma processing department
a30A,a32A,b33,b35:介電構件 a30A, a32A, b33, b35: dielectric components
a30B,a30C,a30J,a30K:電極棒 a30B, a30C, a30J, a30K: Electrode rod
a30D,a30L:保持部 a30D, a30L: Holding part
a30E,a30F:介電管 a30E, a30F: Dielectric tube
a30G,a30H,a30M,a30N:集合電極 a30G, a30H, a30M, a30N: Collective electrode
a32B:收容孔 a32B: receiving hole
a40:交流電源 a40: AC power supply
a50:加熱部 a50: Heating section
a50A,a60A:氣體流路 a50A, a60A: Gas flow path
a50B:吹出口 a50B: Blowing outlet
a50C:遮擋構件 a50C: shielding component
a50D:排氣口 a50D: Exhaust port
a60:支持部 a60: Support Department
a70:氣體供給源 a70: Gas supply source
a72:測定部 a72: Measurement unit
a80:腔室 a80: Chamber
a90:控制部 a90: Control Department
a91:CPU a91:CPU
a92:ROM a92:ROM
a93:RAM a93:RAM
a94,b94:記憶裝置 a94,b94: memory device
a94P,b94P:處理程式 a94P,b94P:Processing program
a95:匯流排線 a95: Bus cable
a96,b96:輸入部 a96,b96: Input section
a97,b97:顯示部 a97,b97:Display unit
a98,b98:通訊部 a98,b98: Communications Department
a100:處理單元 a100: Processing unit
a101:處理液 a101: Treatment fluid
a101A:液膜 a101A: Liquid membrane
a102:電漿 a102: Plasma
a130:電漿處理部 a130: Plasma processing department
a400,b901:加載台 a400,b901: loading platform
a402,b902:分度器機器人 a402,b902: Indexer robot
a404,b904:基板載置部 a404, b904: substrate mounting part
a406:中心機器人 a406:Center robot
A-A,A-A’,C-C,D-D:剖面 A-A, A-A’, C-C, D-D: Section
b1,b1A:電漿產生裝置 b1, b1A: Plasma generating device
b8:電源 b8: Power supply
b8a:電源 b8a:Power supply
b8b:第2輸出端 b8b: Output port 2
b11:基板保持部 b11: substrate holding part
b12:噴嘴 b12: Nozzle
b12a:噴出口 b12a: Spray outlet
b13:防濺罩 b13: Splash shield
b14:電漿移動機構 b14: Plasma moving mechanism
b15:噴嘴移動機構 b15: Nozzle moving mechanism
b21:第1電極部 b21: 1st electrode part
b22:第1電極部 b22: 1st electrode part
b31:第1介電構件 b31: 1st dielectric component
b32:第2介電構件 b32: Second dielectric component
b33a,b33b:主面 b33a,b33b: Main surface
b34:保持構件 b34: Retaining components
b35a:第1主面 b35a: 1st main surface
b35b:第2主面 b35b: Second main surface
b35c:側面 b35c: side
b36:第1孔 b36: Hole 1
b37:第2孔 b37: Hole 2
b80:腔室 b80: Chamber
b81,b82:配線 b81,b82: Wiring
b90:控制部 b90: Control Department
b91:資料處理部 b91: Data Processing Department
b92:記憶部 b92: Memory
b93:匯流排 b93:Bus
b100:基板處理裝置 b100: Substrate processing device
b111:載台 b111: Carrier
b112:卡盤銷 b112: Chuck pin
b113:旋轉機構 b113: Rotating mechanism
b114:軸 b114: shaft
b115:馬達 b115: Motor
b121:供給管 b121: Supply pipe
b122:閥 b122: valve
b123:流量調整部 b123: Flow adjustment department
b124:處理液供給源 b124: Treatment fluid supply source
b211:第1電極構件(第1線狀電極) b211: The first electrode component (the first linear electrode)
b212:第1集合電極 b212: 1st electrode assembly
b221:第2電極構件(第2線狀電極) b221: Second electrode component (second linear electrode)
b222:第2集合電極 b222: Second set of electrodes
b903:主搬送機器人 b903: Main transport robot
b921:非暫時性記憶部/記憶部 b921: Non-temporary memory/memory
b922:暫時性記憶部/記憶部 b922: Temporary memory/memory
C:載架 C:Carrier
D1:長度方向 D1: Length direction
D2:排列方向 D2: Arrangement direction
D3:方向 D3: Direction
G1,G2,G3:圖形 G1,G2,G3:Graphics
Q1,Z1:旋轉軸線 Q1, Z1: rotation axis
S1:步序(電力設定步序) S1: Step (power setting step)
S2:步序(容許溫度設定步序) S2: Step sequence (allowable temperature setting step sequence)
S3:步序(電極節距設計步序) S3: Step sequence (electrode pitch design step sequence)
ST01~ST05:步驟 ST01~ST05: Steps
W:基板 W: Substrate
X,Y,Z:軸 X,Y,Z: axis
圖1係概略性顯示與實施形態相關之基板處理系統之構成之例之俯視圖。 FIG1 is a top view schematically showing an example of the structure of a substrate processing system related to an implementation form.
圖2係概念性顯示圖1所示之控制部之構成之例之圖。 FIG2 is a diagram conceptually showing an example of the structure of the control unit shown in FIG1.
圖3係概略性顯示實施形態之處理單元之構成之例之側視圖。 FIG3 is a side view schematically showing an example of the configuration of a processing unit of an implementation form.
圖4係顯示電漿處理裝置之動作之例之流程圖。 FIG4 is a flow chart showing an example of the operation of the plasma processing device.
圖5係用於說明與實施形態相關之電漿處理裝置之動作之圖。 FIG. 5 is a diagram for explaining the operation of the plasma processing device related to the implementation form.
圖6係用於說明與實施形態相關之電漿處理裝置之動作之圖。 FIG6 is a diagram for explaining the operation of a plasma processing device related to an implementation form.
圖7係具體地顯示加熱部及其周邊構造之構成之例之圖。 Figure 7 is a diagram specifically showing an example of the configuration of the heating section and its surrounding structure.
圖8係顯示直至在電漿處理部內之區域整體產生電漿為止所需之時間之圖。 FIG8 is a graph showing the time required until plasma is generated in the entire area within the plasma processing section.
圖9係顯示於電漿處理部內之一部分之區域產生電漿之狀態之俯視圖。 FIG9 is a top view showing the state of plasma generation in a part of the plasma processing section.
圖10係顯示基於測定部對溫度之測定結果，將一部分之吹出口打開之情形之例之俯視圖。 FIG10 is a top view showing an example of a situation where a portion of the air outlet is opened based on the temperature measurement result of the measuring unit.
圖11係顯示電漿處理部與液膜之間之距離不同之情形之基板之表面上之被膜(阻劑膜)之剝離程度之例之圖。 FIG. 11 is a diagram showing an example of the degree of peeling of the coating (resist film) on the surface of the substrate when the distance between the plasma processing unit and the liquid film is different.
圖12係概略性顯示實施形態之處理單元之構成之例之側視圖。 FIG12 is a side view schematically showing an example of the configuration of a processing unit of an implementation form.
圖13係概略性顯示電漿處理部中之一部分之構成之例之剖視圖。 FIG13 is a cross-sectional view schematically showing an example of the structure of a portion of the plasma processing section.
圖14係概略性顯示電漿處理部中之一部分之構成之例之俯視圖。 FIG14 is a top view schematically showing an example of the structure of a portion of the plasma processing section.
圖15係顯示電漿處理部與液膜之間之距離不同之情形之基板之表面上之被膜(阻劑膜)之剝離程度之例之圖。 FIG. 15 is a diagram showing an example of the degree of peeling of the film (resist film) on the surface of the substrate when the distance between the plasma processing unit and the liquid film is different.
圖16係概略性顯示基板處理系統之構成之一例之俯視圖。 FIG16 is a top view schematically showing an example of the structure of a substrate processing system.
圖17係概略性顯示控制部之內部構成之一例之方塊圖。 Figure 17 is a block diagram schematically showing an example of the internal structure of the control unit.
圖18係概略性顯示基板處理裝置之構成之一例之圖。 FIG18 is a diagram schematically showing an example of the structure of a substrate processing device.
圖19係概略性顯示電漿產生裝置之構成之一例之側剖視圖。 FIG19 is a side sectional view schematically showing an example of the structure of a plasma generating device.
圖20係概略性顯示電漿產生裝置之構成之一例之俯視圖。 FIG. 20 is a top view schematically showing an example of the structure of a plasma generating device.
圖21係顯示電極節距為6mm時之電壓波形及電流波形之一例之圖。 Figure 21 shows an example of the voltage waveform and current waveform when the electrode pitch is 6 mm.
圖22係顯示電極節距為10mm時之電壓波形及電流波形之一例之圖。 Figure 22 shows an example of the voltage waveform and current waveform when the electrode pitch is 10 mm.
圖23係顯示電極節距為12mm時之電壓波形及電流波形之一例之圖。 Figure 23 shows an example of the voltage waveform and current waveform when the electrode pitch is 12 mm.
圖24係顯示電漿產生裝置之溫度與電力之關係之圖。 Figure 24 is a graph showing the relationship between the temperature and power of the plasma generating device.
圖25係顯示電漿產生裝置之設計方法之一例之流程圖。 FIG. 25 is a flow chart showing an example of a design method for a plasma generating device.
圖26係顯示電漿之發光強度與電力之關係之圖。 Figure 26 is a graph showing the relationship between the luminescence intensity of plasma and electric power.
圖27係概略性顯示電漿產生裝置之構成之一例之俯視圖。 FIG. 27 is a top view schematically showing an example of the structure of a plasma generating device.
圖28係概略性顯示電漿產生裝置之構成之一例之側剖視圖。 FIG28 is a side sectional view schematically showing an example of the structure of a plasma generating device.
圖29係概略性顯示電漿產生裝置之構成之一例之側剖視圖。 FIG29 is a side sectional view schematically showing an example of the structure of a plasma generating device.
圖30係顯示脈寬與溫度之關係之圖。 Figure 30 is a graph showing the relationship between pulse width and temperature.
圖31係顯示脈寬與電壓之關係之圖。 Figure 31 is a graph showing the relationship between pulse width and voltage.
圖32係顯示脈寬與電流之關係之圖。 Figure 32 is a graph showing the relationship between pulse width and current.
圖33係顯示脈寬與瞬時電力之關係之圖。 Figure 33 is a graph showing the relationship between pulse width and instantaneous power.
以下，一面參照附圖，一面針對實施形態進行說明。於以下之實施形態中，為了進行技術之說明，亦顯示詳細之特徵等，但其等為例示，為了使實施形態可實施，而其等並非全部為必須之特徵。 Below, the implementation is described with reference to the attached drawings. In the following implementation, detailed features are also shown for the purpose of explaining the technology, but they are for illustrative purposes only and are not all necessary features in order to make the implementation feasible.
此外，圖式係概略性顯示者，為了便於說明，而適宜地於圖式中進行構成之省略、或構成之簡略化。又，不同之圖式分別所示之構成等之大小及位置之相互關係未必係正確地記載者，為可適宜變更者。又，即便於非為剖視圖之俯視圖等之圖式中，亦有時為了易於理解實施形態之內容，而加陰影。 In addition, the diagrams are schematically shown, and for the sake of convenience, the configurations are appropriately omitted or simplified in the diagrams. In addition, the sizes and positions of the configurations shown in different diagrams are not necessarily correctly recorded and can be changed appropriately. In addition, even in diagrams such as top views that are not cross-sectional views, shading is sometimes added to facilitate understanding of the content of the implementation form.
又，於以下所示之說明中，對同樣之構成要素賦予相同之符號而圖示，針對其等之名稱及功能，亦設為同樣者。因此，有時為了避免重複，而省略針對其等之詳細之說明。 In the following description, the same components are illustrated with the same symbols, and their names and functions are also the same. Therefore, in order to avoid duplication, the detailed description of them is sometimes omitted.
又，於本案說明書所記載之說明，於記載為「具備」、「包含」或 「具有」某種構成要素等之情形下，如無特別異議，則非為將其他構成要素之存在除外之排他性表達。 Furthermore, in the description of this case, when it is described as "having", "including" or "having" a certain constituent element, unless there is a special objection, it is not an exclusive expression that excludes the existence of other constituent elements.
又，於本案說明書所記載之說明中，即便有利用「第1」或「第2」等序數之情形，該等用語亦係為了便於理解實施形態之內容而方便上利用者，並非係限定於藉由該等序數而可能產生之順序等者。 Furthermore, in the descriptions in the specification of this case, even if there are cases where ordinal numbers such as "1st" or "2nd" are used, these terms are used for convenience in order to facilitate understanding of the content of the implementation form, and are not limited to the order that may be generated by these ordinal numbers.
又，於本案說明書所記載之說明中，「…軸正向」或「…軸負向」等之表達係將沿著圖示之…軸之箭頭之方向設為正向、將與圖示之…軸之箭頭為相反側之方向設為負向者。 In addition, in the descriptions recorded in the specification of this case, the expressions such as "positive direction of the ...axis" or "negative direction of the ...axis" refer to the direction of the arrow along the ...axis shown in the diagram as the positive direction, and the direction on the opposite side of the arrow along the ...axis shown in the diagram as the negative direction.
又，於本案說明書所記載之說明中，表示為相等之狀態之表達、例如「同一」、「相等」、「均一」或「均質」等，如無特別異議，則包含表示為嚴格地相等之狀態之情形、及在公差或獲得同程度之功能之範圍內產生差異之情形。 Furthermore, in the descriptions in the specification of this case, expressions indicating an equal state, such as "same", "equal", "uniform" or "homogeneous", etc., include situations indicating a strictly equal state and situations where differences occur within the range of tolerance or obtaining the same degree of function, unless otherwise specified.
又，於本案說明書所記載之說明中，亦有利用意指「上」、「下」、「左」、「右」、「側」、「底」、「正」或「背」等特定位置或方向之用語之情形，該等用語係為了易於理解實施形態之內容而方便上利用者，與實際實施時之位置或方向無關。 In addition, in the description of this case, there are also cases where terms are used that refer to specific positions or directions such as "upper", "lower", "left", "right", "side", "bottom", "front" or "back". These terms are used for convenience in order to facilitate understanding of the content of the implementation form and have nothing to do with the position or direction during actual implementation.
又，於本發明申請案說明所記載之說明中，於記載為「…之上表面」或「…之下表面」等之情形下，除了成為對象之構成要素之上表面本 身或下表面本身以外，亦包含在成為對象之構成要素之上表面或下表面形成其他構成要素之狀態。亦即，例如，於記載為「設置於甲之上表面之乙」之情形下，不妨礙在甲與乙之間介置另一構成要素「丙」。 Furthermore, in the description of the invention application, when it is described as "the upper surface of..." or "the lower surface of...", in addition to the upper surface or lower surface of the constituent element itself, it also includes the state where other constituent elements are formed on the upper surface or lower surface of the constituent element. That is, for example, when it is described as "B disposed on the upper surface of A", it does not prevent another constituent element "C" from being interposed between A and B.
於利用表示相對性或絕對性位置關係之表達(例如「於一方向」「沿著一方向」「平行」「正交」「中心」「同心」「同軸」等)之情形下，該表達如無特別異議，則不僅嚴格地表示其位置關係，亦表示在公差或獲得同程度之功能之範圍內關於角度或距離相對地變位之狀態。於利用表示為相等之狀態之表達(例如「同一」「相等」「均質」等)之情形下，該表達如無特別異議，則不僅表示定量地嚴格相等之狀態，亦表示存在公差或獲得同程度之功能之差之狀態。於利用表示形狀之表達(例如「四角形狀」或「圓筒形狀」等)之情形下，該表達如無特別異議，則不僅於幾何學上嚴格地表示該形狀，亦表示於獲得同程度之效果之範圍內例如具有凹凸或倒角等之形狀。於利用「包括」、「備置」、「具備」、「包含」、或「具有」一個構成要素之表達之情形下，該表達非為將其他構成要素之存在除外之排他性表達。於利用「A、B及C之至少任一者」之表達之情形下，該表達包含：僅A、僅B、僅C、A、B及C中任意2個、以及A、B及C之全部。 In the case of using expressions that express relative or absolute positional relationships (e.g., "in a direction," "along a direction," "parallel," "orthogonal," "center," "concentric," "coaxial," etc.), such expressions, unless otherwise specified, not only strictly express the positional relationship, but also express the state of relative displacement of angles or distances within the range of tolerance or obtaining the same degree of function. In the case of using expressions that express a state of equality (e.g., "same," "equal," "homogeneous," etc.), such expressions, unless otherwise specified, not only express the state of strict quantitative equality, but also express the state of difference in tolerance or obtaining the same degree of function. In the case of using an expression that indicates a shape (e.g., "quadrilateral" or "cylindrical shape"), unless otherwise specifically stated, the expression not only indicates the shape strictly in terms of geometry, but also indicates a shape with concave and convex or chamfered corners within the scope of obtaining the same degree of effect. In the case of using an expression that "includes," "provides," "equipped," "includes," or "has" a constituent element, the expression is not an exclusive expression that excludes the existence of other constituent elements. In the case of using an expression that "at least any one of A, B, and C," the expression includes: only A, only B, only C, any two of A, B, and C, and all of A, B, and C.
<第1實施形態> <First implementation form>
以下，針對與本實施形態相關之基板處理方法進行說明。 The following is a description of the substrate processing method related to this embodiment.
<關於基板處理系統之構成> <About the structure of substrate processing system>
圖1係概略性顯示與本實施形態相關之基板處理系統a1之構成之例之俯視圖。基板處理系統a1具備：加載台a400、分度器機器人a402、中心機器人a406、控制部a90、及至少1個處理單元a100(於圖1中為4個處理單元)。 FIG. 1 is a top view schematically showing an example of the structure of a substrate processing system a1 related to the present embodiment. The substrate processing system a1 includes: a loading platform a400, a indexer robot a402, a center robot a406, a control unit a90, and at least one processing unit a100 (four processing units in FIG. 1).
各個處理單元a100係用於對基板W(晶圓)進行處理者，其中至少1個對應於電漿處理裝置。電漿處理裝置係可用於電漿處理之單片式裝置，具體而言，係進行去除附著於基板W之有機物之處理、或基板W中之金屬蝕刻等之裝置。附著於基板W之有機物例如為使用完成之阻劑膜。該阻劑膜例如係用作離子注入步序用之注入遮罩者。 Each processing unit a100 is used to process a substrate W (wafer), and at least one of them corresponds to a plasma processing device. The plasma processing device is a single-chip device that can be used for plasma processing. Specifically, it is a device for removing organic matter attached to the substrate W or etching metal in the substrate W. The organic matter attached to the substrate W is, for example, a used resist film. The resist film is, for example, used as an implantation mask for an ion implantation step.
此處，成為處理對象之基板例如包含：半導體晶圓、液晶顯示裝置用玻璃基板、有機EL(electroluminescence，電致發光)顯示裝置等之平板顯示器(flat panel display)(FPD)用基板、光碟用基板、磁碟用基板、光磁碟用基板、光罩用基板、陶瓷基板、場發射顯示器(field emission display、亦即FED)用基板、或太陽能電池用基板等。 Here, the substrates to be processed include, for example: semiconductor wafers, glass substrates for liquid crystal display devices, flat panel display (FPD) substrates for organic EL (electroluminescence) display devices, optical disk substrates, magnetic disk substrates, optical magnetic disk substrates, photomask substrates, ceramic substrates, field emission display (FED) substrates, or solar cell substrates, etc.
此外，處理單元a100可具有腔室a80。該情形下，藉由利用控制部a90來控制腔室a80內之氣體環境，而處理單元a100可進行所期望之氣體環境中之處理。 In addition, the processing unit a100 may have a chamber a80. In this case, by using the control unit a90 to control the gas environment in the chamber a80, the processing unit a100 can perform processing in the desired gas environment.
控制部a90可控制基板處理系統a1中之各個構成(後述之旋轉卡盤a10之旋轉馬達a10D、處理液供給源a29、閥a25、氣體供給源a70或交流電源 a40等)之動作。載架C係收容基板W之收容器。又，加載台a400係保持複數個載架C之收容器保持機構。分度器機器人a402可於加載台a400與基板載置部a404之間搬送基板W。中心機器人a406可於基板載置部a404及處理單元a100間搬送基板W。 The control unit a90 can control the operation of each component in the substrate processing system a1 (rotating motor a10D of the rotary chuck a10 described later, processing liquid supply source a29, valve a25, gas supply source a70 or AC power supply a40, etc.). The carrier C is a container for accommodating substrates W. In addition, the loading platform a400 is a container holding mechanism for holding a plurality of carriers C. The indexer robot a402 can transport substrates W between the loading platform a400 and the substrate mounting unit a404. The center robot a406 can transport substrates W between the substrate mounting unit a404 and the processing unit a100.
分度器機器人a402、基板載置部a404及中心機器人a406於各個處理單元a100與加載台a400之間搬送基板W。 The indexer robot a402, substrate loading unit a404 and center robot a406 transport substrates W between each processing unit a100 and the loading platform a400.
未處理之基板W自載架C由分度器機器人a402取出。而後，未處理之基板W經由基板載置部a404被交接至中心機器人a406。 The unprocessed substrate W is taken out from the carrier C by the indexer robot a402. Then, the unprocessed substrate W is transferred to the central robot a406 via the substrate loading unit a404.
中心機器人a406將該未處理之基板W搬入處理單元a100。而後，處理單元a100對基板W進行處理。 The central robot a406 moves the unprocessed substrate W into the processing unit a100. Then, the processing unit a100 processes the substrate W.
於處理單元a100中完成處理之基板W由中心機器人a406自處理單元a100取出。而後，完成處理之基板W於根據需要經由其他處理單元a100之後，經由基板載置部a404被交接至分度器機器人a402。分度器機器人a402將完成處理之基板W搬入載架C。根據以上內容，進行對於基板W之處理。 The substrate W that has been processed in the processing unit a100 is taken out from the processing unit a100 by the central robot a406. Then, the processed substrate W is transferred to the indexer robot a402 through the substrate loading part a404 after passing through other processing units a100 as needed. The indexer robot a402 moves the processed substrate W into the carrier C. According to the above content, the substrate W is processed.
圖2係概念性顯示圖1所示之控制部a90之構成之例之圖。控制部a90可由具有電路之一般性電腦構成。具體而言，控制部a90具備：中央運算處理裝置(central processing unit，中央處理單元、亦即CPU)a91、唯讀 記憶體(read only memory、亦即ROM)a92、隨機存取記憶體(random access memory、亦即RAM)a93、記憶裝置a94、輸入部a96、顯示部a97及通訊部a98、及將其等相互連接之匯流排線a95。 FIG2 is a diagram conceptually showing an example of the configuration of the control unit a90 shown in FIG1. The control unit a90 can be formed by a general computer having a circuit. Specifically, the control unit a90 has: a central processing unit (CPU) a91, a read-only memory (ROM) a92, a random access memory (RAM) a93, a memory device a94, an input unit a96, a display unit a97, a communication unit a98, and a bus line a95 connecting them to each other.
ROM a92儲存基本程式。RAM a93被用作CPU a91進行特定之處理時之作業區域。記憶裝置a94係由快閃記憶體或硬碟裝置等非揮發性記憶裝置構成。輸入部a96係由各種開關或觸控面板等構成，自操作員接收處理製程條件等之輸入設定指示。顯示部a97例如由液晶顯示裝置及燈等構成，於CPU a91之控制下顯示各種資訊。通訊部a98具有經由區域網路(local area network)(LAN)等之資料通訊功能。 ROM a92 stores basic programs. RAM a93 is used as a work area when CPU a91 performs specific processing. Memory device a94 is composed of non-volatile memory devices such as flash memory or hard disk devices. Input unit a96 is composed of various switches or touch panels, etc., and receives input setting instructions such as processing process conditions from the operator. Display unit a97 is composed of, for example, a liquid crystal display device and a lamp, etc., and displays various information under the control of CPU a91. Communication unit a98 has a data communication function via a local area network (LAN) and the like.
記憶裝置a94預先設定針對圖1之基板處理系統a1之各個構成之控制之複數個模式。藉由CPU a91執行處理程式a94P，而選擇上述之複數個模式中之1個模式，以該模式控制各個構成。此外，處理程式a94P可記憶於記錄媒體。若使用該記錄媒體，則可於控制部a90安裝處理程式a94P。又，控制部a90執行之功能之一部分或全部未必必須由軟體實現，可由專用之邏輯電路等硬體實現。 The memory device a94 pre-sets a plurality of modes for controlling each component of the substrate processing system a1 of FIG. 1. The CPU a91 executes the processing program a94P, and selects one of the above-mentioned plurality of modes to control each component in the mode. In addition, the processing program a94P can be stored in a recording medium. If the recording medium is used, the processing program a94P can be installed in the control unit a90. In addition, part or all of the functions executed by the control unit a90 do not necessarily have to be implemented by software, but can be implemented by hardware such as a dedicated logic circuit.
圖3係概略性顯示本實施形態之處理單元a100之構成之例之側視圖。 FIG3 is a side view schematically showing an example of the structure of the processing unit a100 of this embodiment.
此外，圖3所示之構成可由圖1中之腔室a80包圍。又，腔室a80內之壓力大致為大氣壓(例如，0.5氣壓以上、且2氣壓以下)。換言之，後述之電漿處理係以大氣壓進行之大氣壓電漿處理。 In addition, the structure shown in FIG. 3 can be surrounded by the chamber a80 in FIG. 1. Moreover, the pressure in the chamber a80 is substantially atmospheric pressure (for example, above 0.5 atmospheres and below 2 atmospheres). In other words, the plasma treatment described below is atmospheric pressure plasma treatment performed at atmospheric pressure.
處理單元a100具備：旋轉卡盤a10，其以大致水平姿勢保持1片基板W，且繞通過基板W之中央部之鉛直之旋轉軸線Z1使基板W旋轉；處理液噴嘴a20，其朝基板W噴出處理液；處理液供給源a29，其將處理液供給至處理液噴嘴a20；閥a25，其切換處理液自處理液供給源a29向處理液噴嘴a20之供給及供給停止；作為大氣壓電漿源之電漿處理部a30(電漿產生裝置)，其配置為於基板W之上方覆蓋基板W整體，且於大氣壓下產生電漿；交流電源a40，其朝電漿處理部a30施加交流電壓；加熱部a50，其將電漿處理部a30加熱；支持部a60，其一體地支持電漿處理部a30及加熱部a50；及筒狀之處理杯a12，其繞基板W之旋轉軸線Z1包圍旋轉卡盤a10。 The processing unit a100 comprises: a rotary chuck a10, which holds a substrate W in a substantially horizontal position and rotates the substrate W around a substantially straight rotation axis Z1 passing through the center of the substrate W; a processing liquid nozzle a20, which sprays the processing liquid toward the substrate W; a processing liquid supply source a29, which supplies the processing liquid to the processing liquid nozzle a20; a valve a25, which switches the supply of the processing liquid from the processing liquid supply source a29 to the processing liquid nozzle a20 and stops the supply; and an atmospheric pressure plasma. The plasma processing part a30 (plasma generating device) of the source is configured to cover the entire substrate W above the substrate W and generate plasma under atmospheric pressure; the AC power source a40 applies AC voltage to the plasma processing part a30; the heating part a50 heats the plasma processing part a30; the supporting part a60 integrally supports the plasma processing part a30 and the heating part a50; and the cylindrical processing cup a12 surrounds the rotary chuck a10 around the rotation axis Z1 of the substrate W.
此處，處理液可根據處理單元a100中之基板處理之用途，使用各種液體。例如，作為蝕刻液，可使用包含鹽酸、氟酸、磷酸、硝酸、硫酸、硫酸鹽、過氧硫酸、過氧硫酸鹽、過氧化氫溶液或氫氧化四甲銨等之液體。又，作為洗淨液，可使用包含氨與過氧化氫溶液之混合液(SC1)、或鹽酸與過氧化氫溶液之混合水溶液(SC2)等之液體。又，作為洗淨液及沖洗液，可使用去離子水(DIW)。 Here, the processing liquid can use various liquids according to the purpose of the substrate processing in the processing unit a100. For example, as an etching liquid, a liquid containing hydrochloric acid, fluoric acid, phosphoric acid, nitric acid, sulfuric acid, sulfate, peroxysulfuric acid, peroxysulfate, hydrogen peroxide solution or tetramethylammonium hydroxide can be used. In addition, as a cleaning liquid, a liquid containing a mixed liquid (SC1) of ammonia and hydrogen peroxide solution, or a mixed aqueous solution (SC2) of hydrochloric acid and hydrogen peroxide solution can be used. In addition, as a cleaning liquid and a rinse liquid, deionized water (DIW) can be used.
於本實施形態中，主要說明用於去除形成於基板W之上表面之阻劑膜之處理。該情形下，作為處理液，設想包含硫酸、硫酸鹽、過氧硫酸及過氧硫酸鹽中之至少一種之液體、或包含過氧化氫之液體等。 In this embodiment, the treatment for removing the resist film formed on the upper surface of the substrate W is mainly described. In this case, as the treatment liquid, it is assumed that the liquid contains at least one of sulfuric acid, sulfate, peroxysulfuric acid and peroxysulfate, or a liquid containing hydrogen peroxide, etc.
處理液噴嘴a20於設想複數種處理液之情形下，可對應於各種處理液 而設置複數個。處理液噴嘴a20以於基板W之上表面形成處理液之液膜之方式，將處理液供給至基板W。 When multiple processing liquids are envisioned, multiple processing liquid nozzles a20 can be provided corresponding to various processing liquids. The processing liquid nozzle a20 supplies the processing liquid to the substrate W in a manner that forms a liquid film of the processing liquid on the upper surface of the substrate W.
處理液噴嘴a20藉由未圖示之臂機構而可移動。具體而言，藉由將處理液噴嘴a20安裝於藉由致動器等可進行角度調整之臂構件，而處理液噴嘴a20可於例如基板W之半徑方向擺動。 The processing liquid nozzle a20 can be moved by an arm mechanism not shown. Specifically, by mounting the processing liquid nozzle a20 on an arm member that can be adjusted in angle by an actuator, the processing liquid nozzle a20 can be swung in the radial direction of the substrate W, for example.
旋轉卡盤a10具備：圓板狀之旋轉基座a10A，其對大致水平姿勢之基板W之下表面進行真空吸附；旋轉軸a10C，其自旋轉基座a10A之中央部朝下方延伸；及旋轉馬達a10D，其藉由使旋轉軸a10C旋轉，而使吸附於旋轉基座a10A之基板W旋轉。此外，可具備自旋轉基座之上表面外周部朝上方突出之複數個卡盤銷，取代旋轉卡盤a10，使用藉由該卡盤銷來夾持基板W之周緣部之夾持式卡盤。 The rotary chuck a10 has: a circular plate-shaped rotary base a10A, which vacuum-adsorbs the lower surface of the substrate W in a roughly horizontal position; a rotary shaft a10C, which extends downward from the central portion of the rotary base a10A; and a rotary motor a10D, which rotates the substrate W adsorbed on the rotary base a10A by rotating the rotary shaft a10C. In addition, a plurality of chuck pins protruding upward from the outer peripheral portion of the upper surface of the rotary base can be provided to replace the rotary chuck a10, and a clamping chuck that clamps the peripheral portion of the substrate W by the chuck pins can be used.
電漿處理部a30具備：板狀之介電構件a30A，其由石英等介電體構成；複數個電極棒a30B，其等在介電構件a30A之上表面中梳形狀配置；複數個電極棒a30C，其等在介電構件a30A之下表面中梳形狀配置；保持部a30D，其包含樹脂(例如聚四氟乙烯(PTFE))或陶瓷等，且於一端保持複數個電極棒a30B及複數個電極棒a30C；介電管a30E，其由石英等介電體構成，且覆蓋各個電極棒a30B；介電管a30F，其由石英等介電體構成，且覆蓋各個電極棒a30C；集合電極a30G，其共通連接於複數個電極棒a30B，且包含鋁等；及集合電極a30H，其共通連接於複數個電極棒a30C，且包含鋁等。集合電極a30G與集合電極a30H例如配置為相配合而 於俯視下為圓形狀，於該圓內收容複數個電極棒a30B及複數個電極棒a30C。 The plasma processing part a30 comprises: a plate-shaped dielectric member a30A, which is made of a dielectric such as quartz; a plurality of electrode rods a30B, which are arranged in a comb shape on the upper surface of the dielectric member a30A; a plurality of electrode rods a30C, which are arranged in a comb shape on the lower surface of the dielectric member a30A; and a holding part a30D, which comprises a resin (such as polytetrafluoroethylene (PTFE)) or ceramics, etc., and holds the plurality of electrode rods at one end. a30B and a plurality of electrode rods a30C; a dielectric tube a30E, which is made of a dielectric such as quartz and covers each electrode rod a30B; a dielectric tube a30F, which is made of a dielectric such as quartz and covers each electrode rod a30C; a collective electrode a30G, which is commonly connected to a plurality of electrode rods a30B and includes aluminum, etc.; and a collective electrode a30H, which is commonly connected to a plurality of electrode rods a30C and includes aluminum, etc. The collective electrode a30G and the collective electrode a30H are configured to match each other and are circular in a top view, and the plurality of electrode rods a30B and the plurality of electrode rods a30C are accommodated in the circle.
電極棒a30B及電極棒a30C例如由鎢等形成。此外，於本實施形態中使用棒形狀之電極構件，但電極構件之形狀不限定於棒形狀。又，複數個電極棒a30B與複數個電極棒a30C以於俯視及側視下不重疊之方式彼此錯開而配置。亦即，於俯視下觀察，電極棒a30B與電極棒a30C交替排列。俯視下之電極棒a30B與電極棒a30C之間之距離(節距)為例如5mm，複數個電極棒a30B間之距離、及複數個電極棒a30C間之距離為例如10mm。 The electrode rod a30B and the electrode rod a30C are formed of, for example, tungsten. In addition, a rod-shaped electrode member is used in this embodiment, but the shape of the electrode member is not limited to a rod shape. In addition, a plurality of electrode rods a30B and a plurality of electrode rods a30C are arranged in a staggered manner so as not to overlap each other in a top view or a side view. That is, when viewed from above, the electrode rods a30B and the electrode rods a30C are arranged alternately. The distance (pitch) between the electrode rods a30B and the electrode rods a30C in a top view is, for example, 5 mm, and the distance between the plurality of electrode rods a30B and the distance between the plurality of electrode rods a30C is, for example, 10 mm.
覆蓋各個電極棒a30B之介電管a30E於電極棒a30B之未由保持部a30D保持之側之端部由保持部a30D保持。又，覆蓋各個電極棒a30C之介電管a30F於電極棒a30C之未由保持部a30D保持之側之端部由保持部a30D保持。 The dielectric tube a30E covering each electrode rod a30B is held by the holding portion a30D at the end of the electrode rod a30B that is not held by the holding portion a30D. In addition, the dielectric tube a30F covering each electrode rod a30C is held by the holding portion a30D at the end of the electrode rod a30C that is not held by the holding portion a30D.
藉此，電極棒a30B之一端由保持部a30D直接保持，另一端經由介電管a30E而由保持部a30D保持。同樣，電極棒a30C之一端之一端由保持部a30D直接保持，另一端經由介電管a30F而由保持部a30D保持。 Thus, one end of the electrode rod a30B is directly held by the holding portion a30D, and the other end is held by the holding portion a30D via the dielectric tube a30E. Similarly, one end of the electrode rod a30C is directly held by the holding portion a30D, and the other end is held by the holding portion a30D via the dielectric tube a30F.
若藉由交流電源a40，朝集合電極a30G及集合電極a30H之間施加交流電壓，則於連接於集合電極a30G之電極棒a30B與連接於集合電極a30H之電極棒a30C之間產生介電體障壁放電。而且，於該放電之放電路徑之周圍產生氣體之電漿化，形成沿著將電極棒a30B與電極棒a30C隔開之介 電構件a30A之表面二維擴大之電漿空間。 If an AC voltage is applied between the collecting electrodes a30G and a30H by an AC power source a40, a dielectric barrier discharge is generated between the electrode rod a30B connected to the collecting electrode a30G and the electrode rod a30C connected to the collecting electrode a30H. Moreover, plasma formation of the gas is generated around the discharge path of the discharge, forming a plasma space that expands two-dimensionally along the surface of the dielectric member a30A that separates the electrode rod a30B and the electrode rod a30C.
此處，可於形成上述之電漿空間時，將O2(氧)、Ne、CO2、空氣、惰性氣體或作為其等之組合氣體供給至電漿處理部a30之下方之空間(亦即基板W之上方之空間)。惰性氣體例如為N2或稀有氣體。稀有氣體例如為He或Ar等。 Here, when forming the plasma space, O2 (oxygen), Ne, CO2 , air, inert gas or a combination thereof may be supplied to the space below the plasma processing part a30 (i.e., the space above the substrate W). The inert gas is, for example, N2 or a rare gas. The rare gas is, for example, He or Ar.
加熱部a50將電漿處理部a30之例如至少一部分之電極棒a30B及至少一部分之電極棒a30C加熱。針對加熱部a50之詳細之構成於後文描述。此外，加熱部a50雖然於圖3中與電漿處理部a30一體地受支持，但可與電漿處理部a30獨立地設置。惟，若加熱部a50與電漿處理部a30一體地受支持，則加熱部a50配置於電漿處理部a30之附近，故而加熱部a50可有效率地將電漿處理部a30加熱。 The heating part a50 heats, for example, at least a portion of the electrode rod a30B and at least a portion of the electrode rod a30C of the plasma processing part a30. The detailed structure of the heating part a50 will be described later. In addition, although the heating part a50 is supported integrally with the plasma processing part a30 in FIG. 3 , it can be provided independently from the plasma processing part a30. However, if the heating part a50 is supported integrally with the plasma processing part a30, the heating part a50 is arranged near the plasma processing part a30, so that the heating part a50 can efficiently heat the plasma processing part a30.
支持部a60一體地支持電漿處理部a30及加熱部a50，且例如藉由未圖示之驅動機構，可於圖3之Z軸方向移動。支持部a60由樹脂(例如PTFE)或陶瓷等構成。 The support part a60 integrally supports the plasma processing part a30 and the heating part a50, and can be moved in the Z-axis direction of FIG. 3, for example, by a driving mechanism not shown. The support part a60 is made of resin (such as PTFE) or ceramics.
此外，雖然於圖3中，將處理液噴嘴a20與電漿處理部a30分別設置，但可將處理液噴嘴a20與電漿處理部a30一體地設置，且一起由支持部a60支持。 In addition, although the processing liquid nozzle a20 and the plasma processing part a30 are separately provided in FIG. 3 , the processing liquid nozzle a20 and the plasma processing part a30 may be provided integrally and supported together by the support part a60.
<關於電漿處理裝置之動作> <About the operation of the plasma processing device>
其次，針對電漿處理裝置之基板處理動作進行說明。與本實施形態相關之電漿處理裝置之處理方法包含下述步序：對於向處理單元a100搬送之基板W進行藥液處理；對於進行完藥液處理之基板W進行洗淨處理；對於進行完洗淨處理之基板W進行乾燥處理；及自處理單元a100搬出進行完乾燥處理之基板W。 Next, the substrate processing operation of the plasma processing device is described. The processing method of the plasma processing device related to this embodiment includes the following steps: treating the substrate W transported to the processing unit a100 with a chemical solution; cleaning the substrate W after the chemical solution treatment; drying the substrate W after the cleaning treatment; and removing the substrate W after the drying treatment from the processing unit a100.
以下，針對電漿處理裝置之動作中所含之去除於藥液處理中或藥液處理後附著於基板W之有機物(例如使用完成之阻劑膜)之步序(亦即上述之步序中之屬進行藥液處理之步序、或進行洗淨處理之步序的步序)，一面參照圖4、圖5及圖6，一面進行說明。此處，圖4係顯示電漿處理裝置之動作之例之流程圖。又，圖5及圖6係用於說明與本實施形態相關之電漿處理裝置之動作之圖。 Hereinafter, the steps of removing organic matter (e.g., a resist film after use) attached to the substrate W during or after the chemical liquid treatment included in the operation of the plasma treatment device (i.e., the steps of performing chemical liquid treatment or the steps of performing cleaning treatment in the above-mentioned steps) will be described with reference to FIGS. 4, 5, and 6. Here, FIG. 4 is a flow chart showing an example of the operation of the plasma treatment device. Moreover, FIGS. 5 and 6 are diagrams used to describe the operation of the plasma treatment device related to the present embodiment.
首先，旋轉卡盤a10水平地保持基板W(圖4之步驟ST01)。而且，藉由旋轉卡盤a10之驅動，而基板W旋轉。此外，由旋轉卡盤a10保持之基板W並非嚴格地與水平方向平行，可在誤差之範圍內偏移。 First, the rotary chuck a10 holds the substrate W horizontally (step ST01 in FIG. 4 ). Then, the substrate W is rotated by driving the rotary chuck a10. In addition, the substrate W held by the rotary chuck a10 is not strictly parallel to the horizontal direction and may deviate within the error range.
其次，如圖5所示之例般，自處理液供給源a29向處理液噴嘴a20供給處理液a101，於基板W旋轉之狀態下，自處理液噴嘴a20向基板W之上表面噴出處理液a101(圖4之步驟ST02)。此時，藉由未圖示之噴嘴臂等，調整處理液噴嘴a20之基板W之上表面上之位置。此外，於本實施形態中，顯示在基板W旋轉之狀態下噴出處理液a101之情形，但基板W可不旋轉。 Next, as shown in the example of FIG. 5 , the processing liquid a101 is supplied from the processing liquid supply source a29 to the processing liquid nozzle a20, and the processing liquid a101 is sprayed from the processing liquid nozzle a20 onto the upper surface of the substrate W while the substrate W is rotating (step ST02 of FIG. 4 ). At this time, the position of the processing liquid nozzle a20 on the upper surface of the substrate W is adjusted by a nozzle arm, etc., which is not shown. In addition, in this embodiment, the situation of spraying the processing liquid a101 while the substrate W is rotating is shown, but the substrate W may not rotate.
藉由自處理液噴嘴a20噴出處理液a101，而如圖5所示之例般，於基板W之上表面形成處理液a101之液膜a101A(圖4之步驟ST03)。此處，液膜a101A之膜厚為例如0.1mm以上、且2.0mm以下，較佳為0.2mm左右。 By ejecting the processing liquid a101 from the processing liquid nozzle a20, a liquid film a101A of the processing liquid a101 is formed on the upper surface of the substrate W as shown in FIG5 (step ST03 of FIG4). Here, the film thickness of the liquid film a101A is, for example, greater than 0.1 mm and less than 2.0 mm, preferably about 0.2 mm.
另一方面，藉由朝與集合電極a30G及集合電極a30H之間施加來自交流電源a40之特定之交流電壓，而於電漿處理部a30之介電構件a30A之表面產生電漿(圖4之步驟ST04)。具體而言，形成沿著介電構件a30A之表面二維擴大之電漿空間。藉由該電漿空間中之電漿之作用，而於該空間附近之氣體中產生活性物種。活性物種中包含具有電荷之離子、或電性上為中性之自由基等。例如，於氣體為包含O2者之情形下，藉由電漿處理部a30中之電漿之作用，而產生作為活性物種之一種之氧自由基。 On the other hand, by applying a specific AC voltage from the AC power source a40 between the collecting electrode a30G and the collecting electrode a30H, plasma is generated on the surface of the dielectric member a30A of the plasma processing section a30 (step ST04 of FIG. 4 ). Specifically, a plasma space that expands two-dimensionally along the surface of the dielectric member a30A is formed. By the action of the plasma in the plasma space, active species are generated in the gas near the space. The active species include ions with charges or free radicals that are electrically neutral. For example, in the case where the gas contains O 2 , oxygen free radicals, which are one type of active species, are generated by the action of the plasma in the plasma processing section a30.
此處，電漿處理部a30較理想為於如上述般產生電漿之階段中預先於特定之待機位置(例如，如圖5所示之例般，與被水平保持之基板W於Z軸正方向充分分開之位置)待機，於在介電構件a30A之表面適度產生均一之電漿後，移動至基板W附近之處理位置(例如，如圖6所示之例般，於被水平地保持之基板W之Z軸正方向側充分接近基板W之位置)。若為如此之態樣，則藉由在產生均一之電漿之狀態下使電漿作用於基板W之表面之液膜a101A，而可進行均一之處理。 Here, the plasma processing section a30 preferably waits in a specific standby position (for example, a position sufficiently separated from the horizontally held substrate W in the positive direction of the Z axis as shown in the example shown in FIG5) in advance during the plasma generation stage as described above, and moves to a processing position near the substrate W (for example, a position sufficiently close to the substrate W in the positive direction of the Z axis of the horizontally held substrate W as shown in the example shown in FIG6) after appropriately generating uniform plasma on the surface of the dielectric member a30A. If this is the case, uniform processing can be performed by causing the plasma to act on the liquid film a101A on the surface of the substrate W in the state of generating uniform plasma.
此外，於本實施形態中，顯示電漿處理部a30相對於基板W移動之態樣，但只要將電漿處理部a30與基板W相對移動而位於上述之處理位置即 可。 In addition, in this embodiment, the plasma processing unit a30 is shown to be moved relative to the substrate W, but it is sufficient to move the plasma processing unit a30 relative to the substrate W and place it at the above-mentioned processing position.
此處，針對充分接近基板W之位置(處理位置)，一面參照圖11，一面進行說明。此外，圖11係顯示電漿處理部a30與液膜a101A之間之距離不同之情形之基板W之表面上之被膜(阻劑膜)之剝離程度之例之圖。處理時間為1.5分鐘(90秒)。 Here, the position (processing position) sufficiently close to the substrate W is described with reference to FIG11. In addition, FIG11 is a diagram showing an example of the degree of peeling of the film (resist film) on the surface of the substrate W when the distance between the plasma processing part a30 and the liquid film a101A is different. The processing time is 1.5 minutes (90 seconds).
上述之電漿處理部a30與液膜a101A之間之距離更具體而言為覆蓋電漿電極即電極棒之介電管a30F與液膜a101A之液面之間之距離。又，假設處理液為硫酸。又，假設液膜a101A之膜厚為0.2mm。又，假設電漿處理部a30中之電漿電極即電極棒a30B(或電極棒a30C)之溫度為400℃。此外，假設電漿電極即電極棒a30B(或電極棒a30C)之溫度為400℃以上。 The distance between the plasma treatment section a30 and the liquid film a101A is more specifically the distance between the dielectric tube a30F covering the plasma electrode, i.e., the electrode rod, and the liquid surface of the liquid film a101A. Also, it is assumed that the treatment liquid is sulfuric acid. Also, it is assumed that the film thickness of the liquid film a101A is 0.2 mm. Also, it is assumed that the temperature of the plasma electrode, i.e., the electrode rod a30B (or the electrode rod a30C) in the plasma treatment section a30 is 400°C. In addition, it is assumed that the temperature of the plasma electrode, i.e., the electrode rod a30B (or the electrode rod a30C), is above 400°C.
如圖11所示之例般，可知於電漿處理部a30與液膜a101A之間之距離為2.3mm以下之情形下，剝離率充分高。另一方面，可知於電漿處理部a30與液膜a101A之間之距離為2.8mm以上之情形下，剝離率顯著降低。 As shown in the example of FIG. 11 , it can be seen that when the distance between the plasma processing section a30 and the liquid film a101A is less than 2.3 mm, the stripping rate is sufficiently high. On the other hand, it can be seen that when the distance between the plasma processing section a30 and the liquid film a101A is more than 2.8 mm, the stripping rate is significantly reduced.
由此可知，電漿處理部a30與液膜a101A之間之距離較理想為2.3mm以下。 It can be seen from this that the ideal distance between the plasma processing section a30 and the liquid film a101A is less than 2.3 mm.
又，若電漿處理部a30與液膜a101A之間之距離過近，則於兩者間產生電弧放電，或液膜a101A之液面朝電漿處理部a30側被吸引，因而，有無法將被膜(阻劑膜)適切地剝離之情形。於發明者等人之實驗中，若電漿 處理部a30與液膜a101A之間之距離未達0.9mm未達，則產生上述之不良狀況。 Furthermore, if the distance between the plasma treatment section a30 and the liquid film a101A is too close, arc discharge will occur between the two, or the liquid surface of the liquid film a101A will be attracted toward the plasma treatment section a30, so that the film (resist film) may not be properly peeled off. In the experiment of the inventors, if the distance between the plasma treatment section a30 and the liquid film a101A is less than 0.9 mm, the above-mentioned undesirable condition will occur.
由此可知，電漿處理部a30與液膜a101A之間之距離較理想為0.9mm以上。 From this, it can be seen that the ideal distance between the plasma processing part a30 and the liquid film a101A is greater than 0.9 mm.
而且，於電漿處理部a30位於處理位置之狀態下，如圖6所示之例般，向液膜a101A供給因電漿處理部a30中之電漿a102之作用而產生之活性物種(圖4之步驟ST05)。 Furthermore, when the plasma processing section a30 is located at the processing position, as shown in the example of FIG. 6 , active species generated by the action of the plasma a102 in the plasma processing section a30 are supplied to the liquid film a101A (step ST05 of FIG. 4 ).
藉由向阻劑膜之上表面中之液膜a101A供給活性物種，而於液膜a101A中，活性物種將處理液a101活化。作為具體之一例，活性物種作用於基板W之上表面之硫酸之液膜a101A。藉此，處理液a101之處理性能提高。具體而言，藉由活性物種與硫酸之反應，產生處理性能(此處為氧化力)高之卡洛酸。卡洛酸亦被稱為過氧單硫酸。藉由該卡洛酸作用於基板W之阻劑膜，而可將阻劑膜氧化去除。 By supplying active species to the liquid film a101A on the upper surface of the resist film, the active species activates the treatment liquid a101 in the liquid film a101A. As a specific example, the active species acts on the liquid film a101A of sulfuric acid on the upper surface of the substrate W. Thereby, the treatment performance of the treatment liquid a101 is improved. Specifically, by the reaction of the active species and sulfuric acid, carboxylic acid with high treatment performance (here, oxidizing power) is generated. Carboxylic acid is also called peroxymonosulfuric acid. By the carboxylic acid acting on the resist film of the substrate W, the resist film can be oxidized and removed.
又，於活性物種包含氧自由基之情形下，藉由氧自由基之氧化力，促進基板W上之阻劑膜之去除。 Furthermore, when the active species include oxygen free radicals, the removal of the resist film on the substrate W is promoted by the oxidizing power of the oxygen free radicals.
此外，雖然於上述之說明中，在處理液噴嘴a20動作之後進行電漿處理部a30之動作，但動作順序不限於此，例如，可大致同時進行處理液噴嘴a20之動作與電漿處理部a30之動作。 In addition, although in the above description, the operation of the plasma processing unit a30 is performed after the operation of the processing liquid nozzle a20, the operation sequence is not limited to this. For example, the operation of the processing liquid nozzle a20 and the operation of the plasma processing unit a30 can be performed roughly at the same time.
又，於本實施形態中，將電漿處理部a30配置為覆蓋基板W之上表面整體，但若將電漿處理部a30配置為僅覆蓋基板W之一部分，可藉由未圖示之驅動機構，使電漿處理部a30於基板W之上表面上之位置伴隨著基板W之旋轉而沿著基板W之上表面於基板W之旋轉方向及徑向移動。 Furthermore, in this embodiment, the plasma processing unit a30 is configured to cover the entire upper surface of the substrate W. However, if the plasma processing unit a30 is configured to cover only a portion of the substrate W, the position of the plasma processing unit a30 on the upper surface of the substrate W can be moved along the upper surface of the substrate W in the rotation direction and radial direction of the substrate W as the substrate W rotates by a driving mechanism not shown in the figure.
又，雖然液膜a101A之形成係藉由開始向基板W之上表面供給處理液a101而開始，且藉由停止向基板W之上表面供給處理液a101而停止，但於停止自處理液噴嘴a20供給處理液a101後，若基板W未高速旋轉(例如，使基板W低速旋轉，進行處理液之液膜之浸置形成，或不使基板W而形成處理液之液膜等)，則仍可維持液膜a101A。活性物種向液膜a101A之供給係於處理液a101之供給停止後在維持液膜a101A之狀態下進行。又，活性物種向液膜a101A之供給可於開始供給處理液a101後、且於停止供給處理液a101前進行。 Furthermore, although the formation of the liquid film a101A is started by starting to supply the processing liquid a101 to the upper surface of the substrate W and is stopped by stopping the supply of the processing liquid a101 to the upper surface of the substrate W, after stopping the supply of the processing liquid a101 from the processing liquid nozzle a20, if the substrate W is not rotated at a high speed (for example, the substrate W is rotated at a low speed to form the liquid film of the processing liquid by immersion, or the liquid film of the processing liquid is formed without the substrate W, etc.), the liquid film a101A can still be maintained. The supply of active species to the liquid film a101A is performed in a state of maintaining the liquid film a101A after the supply of the processing liquid a101 is stopped. Furthermore, the supply of active species to the liquid film a101A can be performed after starting to supply the processing liquid a101 and before stopping the supply of the processing liquid a101.
此外，於上述之去除處理後，一般進行基板W之沖洗步序(洗淨步序)及乾燥步序。例如，沖洗步序藉由向基板W噴出純水(DIW)而進行，乾燥步序雖然進行由異丙醇(IPA)實現之乾燥，但可進行使基板W高速旋轉之甩乾乾燥或基板向上表面噴出氮氣之N2吹氣等。 In addition, after the above-mentioned removal process, a rinsing step (cleaning step) and a drying step are generally performed on the substrate W. For example, the rinsing step is performed by spraying pure water (DIW) onto the substrate W, and the drying step is performed by drying with isopropyl alcohol (IPA), but the substrate W may be dried by spinning at high speed or by N2 blowing by spraying nitrogen gas onto the upper surface of the substrate.
<關於加熱部> <About the heating unit>
其次，針對加熱部a50進行說明。圖7係具體地顯示加熱部a50及其周邊構造之構成之例之圖。此外，於圖7中為求簡化，而將交流電源a40、集 合電極a30G及集合電極a30H省略圖示。如圖7所示之例般，加熱部a50具備：氣體流路a50A，其供自氣體供給源a70供給之氣體(例如N2或Ar等惰性氣體、或乾燥空氣)流動；及吹出口a50B，其設置於由氣體流路a50A分支出之下游之各個端部。各個吹出口a50B例如於俯視下朝基板W之周向之至少一部部分延伸而形成。各個吹出口a50B例如係藉由衝壓加工等而形成之衝孔。 Next, the heating section a50 will be described. FIG. 7 is a diagram specifically showing an example of the construction of the heating section a50 and its peripheral structure. In addition, in FIG. 7 , for the sake of simplicity, the AC power supply a40, the collective electrode a30G, and the collective electrode a30H are omitted. As shown in the example of FIG. 7 , the heating section a50 comprises: a gas flow path a50A, through which a gas (for example, an inert gas such as N2 or Ar, or dry air) supplied from a gas supply source a70 flows; and a blow outlet a50B, which is arranged at each end downstream of the branching from the gas flow path a50A. Each blow outlet a50B is formed, for example, by extending toward at least a portion of the circumference of the substrate W in a plan view. Each blow outlet a50B is, for example, a punch hole formed by a punching process or the like.
自吹出口a50B吹出之氣體係用於將電漿處理部a30之一部分區域或整體加熱之高溫氣體。亦即，自吹出口a50B向電漿處理部a30(例如電極棒a30B及電極棒a30C)吹出熱風。此處，自吹出口a50B吹出之氣體可為於自氣體供給源a70供給之時點被保持為高溫之氣體，亦可為加熱部a50具備未圖示之加熱器、且於氣體流路a50A中由該加熱器加熱而成為高溫之氣體。 The gas blown out from the blowing outlet a50B is a high-temperature gas used to heat a part of the plasma processing part a30 or the whole. That is, the hot air is blown out from the blowing outlet a50B to the plasma processing part a30 (for example, the electrode rod a30B and the electrode rod a30C). Here, the gas blown out from the blowing outlet a50B can be a gas that is kept at a high temperature when supplied from the gas supply source a70, or it can be a gas that is provided with a heater (not shown) in the heating part a50 and heated to a high temperature by the heater in the gas flow path a50A.
此外，於圖7所示之例中，氣體流路a50A與形成於支持加熱部a50之支持部a60內部之氣體流路a60A連通，自氣體供給源a70供給之氣體通過氣體流路a60A及氣體流路a50A到達複數個吹出口a50B。又，於圖7所示之例中，加熱部a50可具備設置於與電漿處理部a30之邊界部分之間隙、即排氣口a50D。若為如此之構成，則自吹出口a50B吹出且將電漿處理部a30加熱後之氣體，之後會從排氣口a50D排出。 In addition, in the example shown in FIG. 7 , the gas flow path a50A is connected to the gas flow path a60A formed inside the support part a60 supporting the heating part a50, and the gas supplied from the gas supply source a70 passes through the gas flow path a60A and the gas flow path a50A to reach the plurality of blowing ports a50B. In addition, in the example shown in FIG. 7 , the heating part a50 may have a gap provided at the boundary portion with the plasma processing part a30, that is, an exhaust port a50D. If such a structure is adopted, the gas blown out from the blowing port a50B and heated by the plasma processing part a30 will be discharged from the exhaust port a50D.
可於各個吹出口a50B安裝遮擋構件a50C。遮擋構件a50C藉由在加熱部a50之下表面上滑動，而可將相互獨立地對應之吹出口a50B開閉。具體 而言，遮擋構件a50C可於在俯視下與吹出口a50B重疊之位置即關閉位置、與在俯視下不與吹出口a50B重疊之位置即打開位置之間移動，能夠在關閉位置將對應之吹出口a50B封蓋，在打開位置將對應之吹出口a50B開放。該動作例如由滾珠螺桿機構或氣缸等驅動機構實現。 A shielding member a50C can be installed at each blow-out port a50B. The shielding member a50C can open and close the blow-out ports a50B that correspond to each other independently by sliding on the lower surface of the heating portion a50. Specifically, the shielding member a50C can move between a position overlapping with the blow-out port a50B when viewed from above, i.e., a closed position, and a position not overlapping with the blow-out port a50B when viewed from above, i.e., an open position, and can cover the corresponding blow-out port a50B in the closed position and open the corresponding blow-out port a50B in the open position. This action is realized by a driving mechanism such as a ball screw mechanism or a cylinder.
各個遮擋構件a50C之開閉動作例如由控制部a90控制。藉由該控制，可對電漿處理部a30內之任意之區域，自選擇性地打開之吹出口a50B吹拂熱風。此外，只要為可將各個吹出口a50B開閉之構成，亦可設置其他形態之開閉機構。 The opening and closing actions of each shielding member a50C are controlled by, for example, the control unit a90. By means of this control, hot air can be blown to any area in the plasma processing unit a30 from the selectively opened blowout port a50B. In addition, other forms of opening and closing mechanisms may also be provided as long as the blowout ports a50B can be opened and closed.
又，可於處理單元a100設置測定部a72，用於測定電漿處理部a30中之電極棒a30B及電極棒a30C之溫度。測定部a72例如為輻射溫度計。於圖7中，測定部a72與電漿處理部a30、加熱部a50及支持部a60獨立地設置，但亦可與電漿處理部a30、加熱部a50或支持部a60一體地設置。又，設置測定部a72之位置不限定於圖7所示之位置。 Furthermore, a measuring section a72 may be provided in the processing unit a100 to measure the temperature of the electrode rod a30B and the electrode rod a30C in the plasma processing section a30. The measuring section a72 is, for example, a radiation thermometer. In FIG7 , the measuring section a72 is provided independently of the plasma processing section a30, the heating section a50, and the supporting section a60, but may also be provided integrally with the plasma processing section a30, the heating section a50, or the supporting section a60. Furthermore, the position where the measuring section a72 is provided is not limited to the position shown in FIG7 .
<關於加熱方法> <About heating method>
其次，針對加熱部a50所進行之電漿處理部a30之加熱方法進行說明。直至電漿處理部a30內之各個區域中之電漿產生為止(直至形成電漿空間為止)所需之時間根據配置於該區域之電極棒之個體差、集合電極之個體差、或電漿處理部a30之組裝誤差等而存在偏差。尤其是，於電漿處理部a30中之形成電漿空間之面積較大之情形下，該偏差亦變大，直至在電漿處理部a30內之區域整體產生均一之電漿為止所需之時間變長。 Next, the heating method of the plasma processing section a30 performed by the heating section a50 is described. The time required until the plasma is generated in each area in the plasma processing section a30 (until the plasma space is formed) varies according to the individual difference of the electrode rods arranged in the area, the individual difference of the collective electrode, or the assembly error of the plasma processing section a30. In particular, when the area of the plasma space formed in the plasma processing section a30 is larger, the deviation becomes larger, and the time required until uniform plasma is generated in the entire area in the plasma processing section a30 becomes longer.
此處，發明者等人發現了於產生大氣壓電漿等電漿之情形下，藉由向電漿處理部a30吹拂100℃等高溫之氣體，而可縮短直至產生電漿為止所需之時間。圖8係顯示直至在電漿處理部a30內之區域整體產生電漿為止所需之時間之圖。於圖8中，分別而言，縱軸表示溫度(值為相對值)，橫軸表示時間(值為相對值)。又，於圖8中，圓圈標記表示於未被加熱之狀態(常溫之狀態)施加電壓之情形之電漿處理部a30之溫度之推移，三角標記表示於被加熱為100℃之狀態下施加電壓之情形之電漿處理部a30之溫度之推移，四角標記表示於被加熱為150℃之狀態下施加電壓之情形之電漿處理部a30之溫度之推移。又，圖8中之縱軸之溫度[50]為溫度上升鈍化之臨限值溫度，將該臨限值溫度設為於電漿處理部a30內之區域整體產生電漿之溫度。 Here, the inventors have found that in the case of generating plasma such as atmospheric pressure plasma, by blowing a high temperature gas such as 100°C into the plasma processing part a30, the time required until the plasma is generated can be shortened. FIG8 is a graph showing the time required until the plasma is generated in the entire area within the plasma processing part a30. In FIG8, the vertical axis represents temperature (values are relative values) and the horizontal axis represents time (values are relative values). In FIG8 , the circle mark indicates the temperature change of the plasma treatment part a30 when the voltage is applied in the unheated state (normal temperature state), the triangle mark indicates the temperature change of the plasma treatment part a30 when the voltage is applied in the state of being heated to 100°C, and the square mark indicates the temperature change of the plasma treatment part a30 when the voltage is applied in the state of being heated to 150°C. In addition, the temperature [50] on the vertical axis in FIG8 is the critical temperature of temperature rise passivation, and the critical temperature is set as the temperature at which the plasma is generated in the entire area within the plasma treatment part a30.
如圖8所示之例般，於未被加熱之狀態(常溫之狀態)下被施加電壓之電漿處理部a30直至到達臨限值溫度為止需要時間[5]，而相對地，於被加熱為100℃或150℃之狀態下被施加電壓之電漿處理部a30可以時間[5]一半左右之時間到達臨限值溫度(參照圖8中之砂地部分)。 As shown in the example of FIG8 , the plasma processing part a30 to which voltage is applied in an unheated state (at room temperature) requires time [5] to reach the critical temperature, whereas the plasma processing part a30 to which voltage is applied in a state heated to 100°C or 150°C can reach the critical temperature in about half the time [5] (refer to the sandy part in FIG8 ).
亦即，藉由在產生電漿之前將電漿處理部a30加熱為例如100℃以上，而可縮短直至在電漿處理部a30內之區域整體產生均一之電漿為止所需之時間。 That is, by heating the plasma processing section a30 to, for example, 100°C or higher before generating plasma, the time required to generate uniform plasma in the entire area within the plasma processing section a30 can be shortened.
於本實施形態中，加熱部a50於電漿處理部a30中產生電漿之前將電 漿處理部a30之一部分或整體加熱。具體而言，藉由自吹出口a50B向電漿處理部a30(例如電極棒a30B及電極棒a30C)吹出高溫之氣體，而將電漿處理部a30加熱。 In this embodiment, the heating part a50 heats a part or the whole of the plasma processing part a30 before generating plasma in the plasma processing part a30. Specifically, the plasma processing part a30 is heated by blowing high-temperature gas from the blowing outlet a50B to the plasma processing part a30 (e.g., the electrode rod a30B and the electrode rod a30C).
藉此，由於在將電漿處理部a30及其附近之氣體加熱之狀態下產生電漿，故可縮短直至在電漿處理部a30內之區域整體產生電漿為止所需之時間。而且，藉由縮短直至產生電漿為止所需之時間，而各個區域中之該時間之偏差亦變小，可於區域整體產生均一之電漿。 Thus, since plasma is generated while the gas in the plasma processing section a30 and its vicinity is heated, the time required until plasma is generated in the entire area within the plasma processing section a30 can be shortened. Moreover, by shortening the time required until plasma is generated, the deviation of the time in each area is also reduced, and uniform plasma can be generated in the entire area.
此外，由於在電漿處理部a30中直至產生電漿為止需要耗費時間，故較理想為於進行電漿處理之前之步序、例如於基板W之上表面形成液膜a101A之步序之間，於電漿處理部a30位於待機位置之狀態下開始該加熱。 In addition, since it takes time to generate plasma in the plasma processing unit a30, it is more ideal to start the heating in the state where the plasma processing unit a30 is in the standby position during the step before the plasma processing, such as the step of forming the liquid film a101A on the upper surface of the substrate W.
又，可使用測定部a72來測定電漿處理部a30內之複數個區域之溫度，基於該測定結果而特定使用加熱部a50來加熱之區域。 In addition, the measuring section a72 can be used to measure the temperature of multiple areas in the plasma processing section a30, and based on the measurement results, the heating section a50 can be used to heat specific areas.
圖9係顯示在電漿處理部a30內之一部分之區域產生電漿之狀態之俯視圖。如圖9所示之例般，由於即便為對電漿處理部a30中之複數個電極棒a30B及複數個電極棒a30C同樣地施加電壓之情形，直至產生電漿a102為止所需之時間亦產生偏差，故直至在電漿處理部a30內之區域整體產生電漿為止所需之時間變長。 FIG9 is a top view showing the state of plasma generation in a part of the area in the plasma processing section a30. As shown in the example of FIG9, even when the voltage is applied to the plurality of electrode rods a30B and the plurality of electrode rods a30C in the plasma processing section a30 in the same manner, the time required until the plasma a102 is generated also varies, so the time required until the plasma is generated in the entire area in the plasma processing section a30 becomes longer.
另一方面，作為直至產生電漿為止所需之時間變長之一個原因，認為係存在產生電漿之該區域之溫度相對不易上升之部位。因此，首先，使用測定部a72測定直至產生電漿為止之電漿處理部a30內之各個區域之溫度，預先特定溫度相對較低之區域。而且，藉由將與該區域對應之吹出口a50B打開，朝該區域(具體而言，位於該區域之電極棒a30B及電極棒a30C)吹拂熱風，而將與電漿處理部a30內之一部分之區域對應之該區域選擇性地加熱。藉此，可減小直至產生在電漿處理部a30內之區域間之電漿為止所需之時間之偏差，有效地縮短直至在電漿處理部a30內之區域整體產生均一之電漿為止所需之時間。 On the other hand, one of the reasons why the time required until plasma is generated is longer is that there is a portion where the temperature of the area where plasma is generated is relatively difficult to rise. Therefore, first, the temperature of each area in the plasma processing section a30 until plasma is generated is measured using the measuring section a72, and an area with a relatively low temperature is pre-specified. Moreover, by opening the blowing outlet a50B corresponding to the area, hot air is blown toward the area (specifically, the electrode rod a30B and the electrode rod a30C located in the area), and the area corresponding to a part of the area in the plasma processing section a30 is selectively heated. In this way, the deviation of the time required to generate plasma between the regions in the plasma processing section a30 can be reduced, and the time required to generate uniform plasma in the entire region in the plasma processing section a30 can be effectively shortened.
圖10係顯示基於測定部a72所進行之溫度之測定結果將一部分之吹出口a50B打開之情形之例之俯視圖。於圖10所示之情形下，根據測定部a72所進行之溫度之測定，判定為某一區域(圖10之右上部分)之溫度相對較低，將配置為覆蓋該區域之吹出口a50B打開。如此，可有效地將與經打開之吹出口a50B對應之區域之電極棒a30B及電極棒a30C加熱，減小直至產生在電漿處理部a30內之區域間之電漿為止所需之時間之偏差。 FIG. 10 is a top view showing an example of opening a portion of the blowout port a50B based on the temperature measurement result performed by the measuring section a72. In the case shown in FIG. 10, based on the temperature measurement performed by the measuring section a72, it is determined that the temperature of a certain area (the upper right part of FIG. 10) is relatively low, and the blowout port a50B configured to cover the area is opened. In this way, the electrode rods a30B and a30C in the area corresponding to the opened blowout port a50B can be effectively heated, and the deviation of the time required until plasma is generated between the areas in the plasma processing section a30 can be reduced.
此外，於圖9與圖10中，未產生電漿a102之區域與將吹出口a50B打開之區域一致，由測定部a72測定之溫度相對較低之區域、與未於特定之時間內產生電漿a102之區域大致一致。 In addition, in Figures 9 and 10, the area where plasma a102 is not generated is consistent with the area where the blowing port a50B is opened, and the area with a relatively low temperature measured by the measuring unit a72 is roughly consistent with the area where plasma a102 is not generated within a specific time.
又，於圖10中，經打開之吹出口a50B為1個，但可將相互分開之複數個吹出口a50B打開。由於若為如此之加熱方法，則可於複數個區域中同 時進行加熱，故即便為具有多種溫度分佈之電漿處理部a30，亦可有效地加熱。 In addition, in FIG. 10 , there is only one blow outlet a50B opened, but multiple blow outlets a50B separated from each other may be opened. Since such a heating method can heat multiple areas at the same time, even a plasma processing section a30 having multiple temperature distributions can be effectively heated.
<第2實施形態> <Second implementation form>
圖12係概略性顯示本實施形態之處理單元a100A之構成之例之側視圖。於圖12中，為了方便起見而以透過一部分之構成之狀態圖示。 FIG. 12 is a side view schematically showing an example of the structure of the processing unit a100A of this embodiment. In FIG. 12 , for the sake of convenience, a portion of the structure is shown.
此外，圖12所示之構成可由圖1中之腔室a80包圍。又，腔室a80內之壓力大致為大氣壓(例如，0.5氣壓以上、且2氣壓以下)。換言之，後述之電漿處理係於大氣壓下之大氣壓電漿處理。 In addition, the structure shown in FIG. 12 can be surrounded by the chamber a80 in FIG. 1. Moreover, the pressure in the chamber a80 is substantially atmospheric pressure (for example, above 0.5 atmospheres and below 2 atmospheres). In other words, the plasma treatment described below is atmospheric pressure plasma treatment under atmospheric pressure.
處理單元a100A具備：旋轉卡盤a10；處理杯a12；處理液噴嘴a20；處理液供給源a29；閥a25；作為大氣壓電漿源之電漿處理部a130(電漿產生裝置)，其配置為於基板W之上方覆蓋基板W整體，且於大氣壓下產生電漿；交流電源a40，其對電漿處理部a130施加交流電壓；加熱部a50，其將電漿處理部a130加熱；及支持部a60，其一體地支持電漿處理部a130及加熱部a50。 The processing unit a100A includes: a rotary chuck a10; a processing cup a12; a processing liquid nozzle a20; a processing liquid supply source a29; a valve a25; a plasma processing unit a130 (plasma generating device) as an atmospheric pressure plasma source, which is arranged to cover the entire substrate W above the substrate W and generate plasma under atmospheric pressure; an AC power source a40, which applies an AC voltage to the plasma processing unit a130; a heating unit a50, which heats the plasma processing unit a130; and a supporting unit a60, which integrally supports the plasma processing unit a130 and the heating unit a50.
電漿處理部a130具備：由石英等介電體構成之板狀之介電構件a32A；複數個電極棒a30J，其等被收容於介電構件a32A內，且配置為梳形狀；複數個電極棒a30K，其等被收容於介電構件a32A內，且配置為梳形狀；保持部a30L，其由樹脂(例如聚四氟乙烯(PTFE))或陶瓷等構成，且於一端分別保持複數個電極棒a30J及複數個電極棒a30K；集合電極 a30M，其共通連接於複數個電極棒a30J，且由鋁等構成；及集合電極a30N，其共通連接於複數個電極棒a30K，且由鋁等構成。集合電極a30M與集合電極a30N例如配置為相配合而於俯視下為圓形狀，於該圓內收容複數個電極棒a30J及複數個電極棒a30K。收容電極棒a30J或電極棒a30K之介電構件a32A內之孔(後述之收容孔a32B)之下表面與介電構件a32A之下表面之間之距離(亦即，收容孔a32B下方之厚度)為例如0.3mm。 The plasma processing part a130 includes: a plate-shaped dielectric member a32A made of a dielectric such as quartz; a plurality of electrode rods a30J, which are accommodated in the dielectric member a32A and arranged in a comb shape; a plurality of electrode rods a30K, which are accommodated in the dielectric member a32A and arranged in a comb shape; a holding part a30L, which is made of a resin (e.g. The electrode a30M and the electrode a30N are each composed of a plurality of electrode rods a30J and a plurality of electrode rods a30K, and are connected to the plurality of electrode rods a30J and are composed of aluminum, etc. The electrode a30M and the electrode a30N are each composed of aluminum, etc. The electrode a30M and the electrode a30N are configured to match each other and are circular in a top view, and the plurality of electrode rods a30J and the plurality of electrode rods a30K are contained in the circle. The distance between the lower surface of the hole in the dielectric member a32A that accommodates the electrode rod a30J or the electrode rod a30K (hereinafter referred to as the accommodation hole a32B) and the lower surface of the dielectric member a32A (that is, the thickness below the accommodation hole a32B) is, for example, 0.3 mm.
電極棒a30J及電極棒a30K例如為由鎢等形成之棒形狀。此外，電極棒a30J及電極棒a30K之形狀不限定於棒形狀。又，複數個電極棒a30J與複數個電極棒a30K以於俯視下不重疊之方式彼此錯開而配置。亦即，於俯視下觀察，電極棒a30J與電極棒a30K交替排列。俯視下之電極棒a30J與電極棒a30K之間之距離(節距)為例如6mm，複數個電極棒a30J間之距離、及複數個電極棒a30K間之距離為例如12mm。 The electrode rod a30J and the electrode rod a30K are, for example, in the shape of a rod formed of tungsten or the like. In addition, the shape of the electrode rod a30J and the electrode rod a30K is not limited to the rod shape. In addition, the plurality of electrode rods a30J and the plurality of electrode rods a30K are arranged so as to be staggered with each other without overlapping when viewed from above. That is, when viewed from above, the electrode rods a30J and the electrode rods a30K are arranged alternately. The distance (pitch) between the electrode rods a30J and the electrode rods a30K when viewed from above is, for example, 6 mm, and the distance between the plurality of electrode rods a30J and the distance between the plurality of electrode rods a30K is, for example, 12 mm.
另一方面，於圖12所示之側視下，複數個電極棒a30J與複數個電極棒a30K相互重疊地配置。此外，於圖12所示之側視下，複數個電極棒a30J與複數個電極棒a30K可不相同重疊，例如可於圖12之Z軸方向偏移而配置。 On the other hand, in the side view shown in FIG12, a plurality of electrode rods a30J and a plurality of electrode rods a30K are arranged to overlap each other. In addition, in the side view shown in FIG12, a plurality of electrode rods a30J and a plurality of electrode rods a30K may not overlap in the same manner, for example, they may be arranged to be offset in the Z-axis direction of FIG12.
介電構件a32A為上表面及下表面無凹凸之平面形狀。因此，於電漿處理時等產生之介電構件a32A之下表面之附著物之洗淨變容易。 The dielectric component a32A is a flat surface with no bumps on the upper and lower surfaces. Therefore, it is easy to clean the attached materials on the lower surface of the dielectric component a32A generated during plasma treatment.
圖13係概略性顯示電漿處理部a130中之一部分之構成之例之剖視 圖。圖13對應於圖12之A-A’剖面。此外，電極棒a30J及電極棒a30K之數量不限定於圖13所示之數量。 FIG13 is a cross-sectional view schematically showing an example of the structure of a portion of the plasma processing section a130. FIG13 corresponds to the A-A’ section of FIG12. In addition, the number of electrode rods a30J and electrode rods a30K is not limited to the number shown in FIG13.
如圖13所示之例般，於介電構件a32A形成複數個自板形狀之側面沿著X軸方向延伸之收容孔a32B，電極棒a30J及電極棒a30K分別被收容於對應之收容孔a32B。收容孔a32B由於自X軸正向及X軸負向之介電構件a32A之端部(側面)向內部交替延伸而形成，故分別而言，電極棒a30J自X軸正向側之端部***，電極棒a30K自X軸負向側之端部***。如此，各個電極棒a30J及電極棒a30K係由介電體即介電構件a32A包圍周圍而配置。又，如圖12所示，收容孔a32B形成於靠近介電構件a32A之下表面之位置。 As shown in FIG. 13 , a plurality of receiving holes a32B extending from the plate-shaped side surface along the X-axis direction are formed in the dielectric member a32A, and the electrode rod a30J and the electrode rod a30K are respectively received in the corresponding receiving holes a32B. The receiving holes a32B are formed by alternately extending inward from the ends (side surfaces) of the dielectric member a32A in the positive direction of the X-axis and the negative direction of the X-axis, so that the electrode rod a30J is inserted from the end on the positive side of the X-axis, and the electrode rod a30K is inserted from the end on the negative side of the X-axis. In this way, each electrode rod a30J and the electrode rod a30K are arranged to be surrounded by the dielectric member a32A, that is, the dielectric member. Furthermore, as shown in FIG. 12 , the receiving hole a32B is formed near the lower surface of the dielectric component a32A.
若藉由交流電源a40，對集合電極a30M及集合電極a30N之間施加交流電壓，則對連接於集合電極a30M之各電極棒a30J與連接於集合電極a30N之各電極棒a30K之間施加交流電壓。其結果，於電極棒a30J與電極棒a30K之間產生介電體障壁放電。而且，於該放電之放電路徑之周圍產生氣體之電漿化，形成沿著將電極棒a30J與電極棒a30K隔開之介電構件a32A之表面(包含收容孔a32B之內部)二維擴大之電漿空間。此處，由於收容孔a32B形成於靠近介電構件a32A之下表面之位置，故電漿a102主要形成於介電構件a32A之下表面。 If an AC voltage is applied between the collective electrode a30M and the collective electrode a30N by the AC power source a40, an AC voltage is applied between each electrode rod a30J connected to the collective electrode a30M and each electrode rod a30K connected to the collective electrode a30N. As a result, a dielectric barrier discharge is generated between the electrode rod a30J and the electrode rod a30K. Moreover, plasma is generated around the discharge path of the discharge, forming a plasma space that expands two-dimensionally along the surface of the dielectric member a32A that separates the electrode rod a30J and the electrode rod a30K (including the inside of the receiving hole a32B). Here, since the receiving hole a32B is formed near the lower surface of the dielectric component a32A, the plasma a102 is mainly formed on the lower surface of the dielectric component a32A.
此處，可於形成上述之電漿空間時，將例如O2(氧)、Ne、CO2、空氣、惰性氣體或作為其等之組合之氣體供給至電漿產生部130之下方之空 間(亦即基板W之上方之空間)。惰性氣體例如為N2或稀有氣體。稀有氣體例如為He或Ar等。 Here, when forming the plasma space, a gas such as O2 (oxygen), Ne, CO2 , air, an inert gas, or a combination thereof may be supplied to the space below the plasma generating part 130 (i.e., the space above the substrate W). The inert gas is, for example, N2 or a rare gas. The rare gas is, for example, He or Ar.
藉由電漿a102之作用，而於該空間附近之氣體產生活性物種。活性物種中包含具有電荷之離子、或電性上為中性之自由基等。例如，於氣體為包含O2者之情形下，藉由電漿處理部a130中之電漿之作用，而產生作為活性物種之一種之氧自由基。 Active species are generated in the gas near the space by the action of plasma a102. Active species include ions with charge or free radicals that are electrically neutral. For example, when the gas contains O2 , oxygen free radicals, which are one type of active species, are generated by the action of plasma in the plasma treatment section a130.
可使用上述之構成之處理單元a100A，進行與第1實施形態所示之情形同樣之基板處理動作(圖4之步驟ST01至步驟ST05)。 The processing unit a100A having the above-mentioned structure can be used to perform the same substrate processing operations as those shown in the first embodiment (steps ST01 to ST05 in FIG. 4 ).
此處，電漿處理部a130較理想為於如上述般產生電漿a102之階段中預先於特定之待機位置待機，於在介電構件a32A之下表面適度產生均一之電漿a102後，移動至基板W附近之處理位置。若為如此之態樣，則藉由在產生均一之電漿1a02之狀態下使電漿a102作用於基板W之表面，而可進行均一之處理。 Here, the plasma processing unit a130 is preferably in a specific standby position in advance in the stage of generating plasma a102 as described above, and after appropriately generating uniform plasma a102 on the lower surface of the dielectric member a32A, it moves to a processing position near the substrate W. If this is the case, uniform processing can be performed by allowing the plasma a102 to act on the surface of the substrate W while generating uniform plasma 1a02.
此外，於本實施形態中電漿處理部a130配置為覆蓋基板W之上表面整體，但於電漿處理部a130配置為僅覆蓋基板W之一部分之情形下，可使電漿處理部a30於基板W之上表面上之位置伴隨著基板W之旋轉而沿著基板W之上表面於基板W之旋轉方向及徑向移動。 In addition, in this embodiment, the plasma processing unit a130 is configured to cover the entire upper surface of the substrate W. However, when the plasma processing unit a130 is configured to cover only a portion of the substrate W, the position of the plasma processing unit a30 on the upper surface of the substrate W can be moved along the upper surface of the substrate W in the rotation direction and radial direction of the substrate W as the substrate W rotates.
此處，針對充分接近基板W之位置(處理位置)，一面參照圖15，一面 進行說明。此外，圖15係顯示電漿處理部a130與液膜a101A之間之距離不同之情形之基板W之表面上之被膜(阻劑膜)之剝離程度之例之圖。 Here, the position (processing position) sufficiently close to the substrate W is explained with reference to FIG. 15. In addition, FIG. 15 is a diagram showing an example of the degree of peeling of the film (resist film) on the surface of the substrate W when the distance between the plasma processing part a130 and the liquid film a101A is different.
於圖15中，作為不同之溫度設定，例示介電構件a32A之溫度為200℃之情形、及介電構件a32A之溫度為250℃之情形。於各個溫度條件下，處理時間為1.5分鐘(90秒)。此外，介電構件a32A之溫度為介電構件a32A整體之溫度被均一地保持之狀態下之介電構件a32A之上表面之溫度。 In FIG. 15 , as different temperature settings, the case where the temperature of the dielectric member a32A is 200°C and the case where the temperature of the dielectric member a32A is 250°C are illustrated. Under each temperature condition, the processing time is 1.5 minutes (90 seconds). In addition, the temperature of the dielectric member a32A is the temperature of the upper surface of the dielectric member a32A when the temperature of the entire dielectric member a32A is uniformly maintained.
又，上述之電漿處理部a130與液膜a101A之間之距離更具體而言為收容電漿電極即電極棒之介電構件a32A之下表面與液膜a101A之液面之間之距離。又，假設處理液為硫酸。又，假設液膜a101A之膜厚為0.2mm。 Furthermore, the distance between the plasma treatment section a130 and the liquid film a101A is more specifically the distance between the lower surface of the dielectric component a32A that accommodates the plasma electrode, i.e., the electrode rod, and the liquid surface of the liquid film a101A. Furthermore, it is assumed that the treatment liquid is sulfuric acid. Furthermore, it is assumed that the film thickness of the liquid film a101A is 0.2 mm.
又，圖15之圓圈標記表示該條件下之被膜(阻劑膜)之剝離率充分高(例如100%)。另一方面，圖15之×標記表示該條件下之被膜(阻劑膜)之剝離率不充分(例如未達100%)。 In addition, the circle mark in Figure 15 indicates that the stripping rate of the film (resist film) under the condition is sufficiently high (for example, 100%). On the other hand, the × mark in Figure 15 indicates that the stripping rate of the film (resist film) under the condition is insufficient (for example, less than 100%).
如圖15所示之例般，可知於當介電構件a32A之溫度為200℃時，電漿處理部a130與液膜a101A之間之距離為2.3mm以上、且2.8mm以下之情形下，被膜(阻劑膜)之剝離率充分高(例如為100%)。 As shown in the example of FIG. 15 , it can be seen that when the temperature of the dielectric component a32A is 200°C and the distance between the plasma processing part a130 and the liquid film a101A is greater than 2.3 mm and less than 2.8 mm, the peeling rate of the film (resist film) is sufficiently high (for example, 100%).
另一方面，由於當電漿處理部a130與液膜a101A之間之距離為1.8mm以下時，該距離過近，故於兩者間產生電弧放電，或液膜a101A之液面朝電漿處理部a130側被吸引，因而有無法將被膜(阻劑膜)適切地剝離之 情形。又，於當電漿處理部a130與液膜a101A之間之距離為3.8mm以時，被膜(阻劑膜)之剝離率逐漸降低(例如，當該距離為3.8mm時，剝離率為60%)。因此，可知該等距離範圍之被膜(阻劑膜)之剝離率不充分。 On the other hand, when the distance between the plasma processing part a130 and the liquid film a101A is less than 1.8 mm, the distance is too close, so arc discharge occurs between the two, or the liquid surface of the liquid film a101A is attracted toward the plasma processing part a130 side, so that the film (resist film) cannot be properly peeled off. In addition, when the distance between the plasma processing part a130 and the liquid film a101A is 3.8 mm or more, the peeling rate of the film (resist film) gradually decreases (for example, when the distance is 3.8 mm, the peeling rate is 60%). Therefore, it can be seen that the peeling rate of the film (resist film) in this distance range is insufficient.
又，如圖15所示之例般，於當介電構件a32A之溫度為250℃時，電漿處理部a130與液膜a101A之間距離為2.3mm以上、且3.8mm以下之情形下，被膜(阻劑膜)之剝離率充分高(例如為100%)。 Moreover, as shown in the example of FIG. 15 , when the temperature of the dielectric component a32A is 250°C and the distance between the plasma processing part a130 and the liquid film a101A is greater than 2.3 mm and less than 3.8 mm, the peeling rate of the film (resist film) is sufficiently high (for example, 100%).
另一方面，由於當電漿處理部a130與液膜a101A之間之距離為1.8mm以下時，該距離過近，故於兩者間產生電弧放電，或液膜a101A之液面朝電漿處理部a130側被吸引，因而有無法將被膜(阻劑膜)適切地剝離之情形。又，於當電漿處理部a130與液膜a101A之間之距離為4.3mm以上時，被膜(阻劑膜)之剝離率逐漸降低(例如，當該距離為4.3mm時，剝離率為85%)。因此，可知該等距離範圍之被膜(阻劑膜)之剝離率不充分。 On the other hand, when the distance between the plasma processing part a130 and the liquid film a101A is less than 1.8mm, the distance is too close, so arc discharge occurs between the two, or the liquid surface of the liquid film a101A is attracted toward the plasma processing part a130 side, so there is a situation where the film (resist film) cannot be properly peeled off. In addition, when the distance between the plasma processing part a130 and the liquid film a101A is more than 4.3mm, the peeling rate of the film (resist film) gradually decreases (for example, when the distance is 4.3mm, the peeling rate is 85%). Therefore, it can be seen that the peeling rate of the film (resist film) in this distance range is insufficient.
<關於加熱方法> <About heating method>
其次，針對加熱部a50所進行之電漿處理部a130之加熱方法進行說明。直至產生電漿處理部a130內之各個區域中之電漿為止(直至形成電漿空間為止)所需之時間根據配置於該區域之電極棒之個體差、集合電極之個體差、或該區域中之熱容量之大小等而存在偏差。尤其是，於電漿處理部a130中之形成電漿空間之面積較大之情形下，該偏差亦變大，直至在電漿處理部a130內之區域整體產生均一之電漿為止所需之時間變長。 Next, the heating method of the plasma processing section a130 performed by the heating section a50 is described. The time required to generate plasma in each area in the plasma processing section a130 (until a plasma space is formed) varies according to the individual differences of the electrode rods arranged in the area, the individual differences of the collective electrodes, or the size of the heat capacity in the area. In particular, when the area of the plasma space formed in the plasma processing section a130 is larger, the deviation becomes larger, and the time required to generate uniform plasma in the entire area in the plasma processing section a130 becomes longer.
如上述般，發明者等人發現了於產生大氣壓電漿等電漿之情形下，藉由向電漿處理部a130吹拂100℃等高溫之氣體，而可縮短直至產生電漿為止所需之時間。 As mentioned above, the inventors and others have found that when generating plasma such as atmospheric pressure plasma, the time required until plasma is generated can be shortened by blowing a high temperature gas such as 100°C into the plasma processing part a130.
於本實施形態中，加熱部a50於電漿處理部a130中產生電漿之前將電漿處理部a130之一部分或整體加熱。具體而言，藉由自圖7所示之吹出口a50B向電漿處理部a130(例如介電構件a32A之上表面)吹出高溫之氣體，而將電漿處理部a130加熱。 In this embodiment, the heating part a50 heats a part or the whole of the plasma processing part a130 before generating plasma in the plasma processing part a130. Specifically, the plasma processing part a130 is heated by blowing high-temperature gas from the blowing port a50B shown in FIG. 7 toward the plasma processing part a130 (for example, the upper surface of the dielectric component a32A).
藉此，由於在將電漿處理部a130及其附近之氣體加熱之狀態下產生電漿，故可縮短直至在電漿處理部a130內之區域整體產生電漿為止所需之時間。而且，藉由縮短直至產生電漿為止所需之時間，而各個區域中之該時間之偏差亦變小，可於區域整體產生均一之電漿。 Thus, since plasma is generated while the plasma processing section a130 and the gas in its vicinity are heated, the time required until plasma is generated in the entire area within the plasma processing section a130 can be shortened. Moreover, by shortening the time required until plasma is generated, the deviation of the time in each area is also reduced, and uniform plasma can be generated in the entire area.
此外，由於直至在電漿處理部a130中產生電漿為止需要時間，故較理想為於進行電漿處理之前之步序、例如於基板W之上表面形成液膜a101A(參照圖5)之步序之間，於電漿產生部a130位於待機位置之狀態下開始該加熱。 In addition, since it takes time to generate plasma in the plasma processing unit a130, it is more ideal to start the heating when the plasma generating unit a130 is in the standby position during the steps before the plasma processing, such as the step of forming the liquid film a101A on the upper surface of the substrate W (see FIG. 5 ).
又，可使用圖7之測定部a72來測定電漿處理部a130內之複數個區域之溫度，基於該測定結果而特定使用加熱部a50來加熱之區域。 In addition, the measuring section a72 in FIG. 7 can be used to measure the temperature of multiple areas in the plasma processing section a130, and based on the measurement results, the heating section a50 can be used to heat the specific area.
圖14係概略性顯示電漿處理部a130之一部分之構成之例之俯視圖。 於圖14中，為了方便起見而以透過一部分之構成之狀態圖示。於圖14所示之電漿處理部a130中，由於即便為對複數個電極棒a30J及複數個電極棒a30K同樣地施加電壓之情形，直至產生電漿為止需要之時間亦產生偏差，故直至在電漿處理部a130內之區域整體產生電漿為止所需之時間變長。 FIG. 14 is a top view schematically showing an example of a part of the structure of the plasma processing section a130. In FIG. 14, for the sake of convenience, the state of the structure through a part is illustrated. In the plasma processing section a130 shown in FIG. 14, since the time required until plasma is generated varies even when the voltage is applied to the plurality of electrode rods a30J and the plurality of electrode rods a30K in the same manner, the time required until plasma is generated in the entire area within the plasma processing section a130 becomes longer.
另一方面，作為直至產生電漿為止所需之時間變長之一個原因，認為係存在產生電漿之該區域之溫度相對不易上升之部位。因此，首先，測定直至使用圖7之測定部a72產生電漿為止之電漿處理部a130內之各個區域之溫度，預先特定溫度相對較低之區域。而且，藉由將與該區域對應之圖7所示之吹出口a50B打開，朝該區域(具體而言，位於該區域之介電構件a32A之上表面)吹拂熱風，而將與電漿處理部a130內之一部分之區域對應之該區域選擇性地加熱。藉此，可減小直至產生在電漿處理部a130內之區域間之電漿為止所需之時間之偏差，有效地縮短直至在電漿處理部a130內之區域整體產生均一之電漿為止所需之時間。 On the other hand, one of the reasons why the time required until plasma is generated becomes longer is that there is a portion where the temperature of the area where plasma is generated is relatively difficult to rise. Therefore, first, the temperature of each area in the plasma processing part a130 until plasma is generated using the measuring part a72 of FIG. 7 is measured, and an area with a relatively low temperature is specified in advance. And, by opening the blowing port a50B shown in FIG. 7 corresponding to the area, hot air is blown toward the area (specifically, the upper surface of the dielectric member a32A located in the area), and the area corresponding to a part of the area in the plasma processing part a130 is selectively heated. In this way, the deviation of the time required to generate plasma between the regions in the plasma processing section a130 can be reduced, and the time required to generate uniform plasma in the entire region in the plasma processing section a130 can be effectively shortened.
<關於由以上所記載之實施形態產生之效果> <Regarding the effects produced by the implementation forms described above>
其次，顯示由以上所記載之實施形態產生之效果之例。此外，於以下之說明中，基於以上所記載之實施形態所示之例之具體的構成，記載該效果，但可於產生同樣效果之範圍內置換為本案說明書所例示之其他具體的構成。亦即，以下有為了方便起見而僅代表性記載建立對應關係之具體的構成中任一者之情形，但可將代表性記載之具體的構成置換成建立對應關係之其他具體的構成。 Next, examples of the effects produced by the implementation described above are shown. In addition, in the following description, the effects are described based on the specific structure of the example shown in the implementation described above, but they can be replaced with other specific structures illustrated in the specification of this case within the scope of producing the same effect. That is, for the sake of convenience, there are cases where only one of the specific structures that establish a corresponding relationship is representatively described below, but the representatively described specific structure can be replaced with other specific structures that establish a corresponding relationship.
根據以上所記載之實施形態，電漿處理裝置具備電漿處理部a30、及加熱部a50。電漿處理部a30產生電漿，對基板W進行處理。加熱部a50將電漿處理部a30加熱。此處，加熱部a50於在電漿處理部a30中產生電漿之前，將電漿處理部a30加熱。 According to the above-described implementation form, the plasma processing device includes a plasma processing unit a30 and a heating unit a50. The plasma processing unit a30 generates plasma to process the substrate W. The heating unit a50 heats the plasma processing unit a30. Here, the heating unit a50 heats the plasma processing unit a30 before generating plasma in the plasma processing unit a30.
根據如此之構成，由於在將電漿處理部a30及其附近之氣體加熱之狀態下產生電漿，故可縮短直至在電漿處理部a30內之區域整體產生電漿為止所需之時間。而且，藉由縮短直至產生電漿為止所需之時間，而各個區域中之該時間之偏差亦變小，可於區域整體產生均一之電漿。 According to such a structure, since plasma is generated while the gas in the plasma processing section a30 and its vicinity is heated, the time required until plasma is generated in the entire area within the plasma processing section a30 can be shortened. Moreover, by shortening the time required until plasma is generated, the deviation of the time in each area is also reduced, and uniform plasma can be generated in the entire area.
此外，於對上述之構成適宜追加了本案說明書所示之例之其他構成之情形下，亦即於適宜追加了未作為上述之構成而言及之本案說明書中之其他構成之情形下，亦可產生同樣之效果。 In addition, the same effect can be achieved when other structures shown in the description of this case are appropriately added to the above-mentioned structures, that is, when other structures in the description of this case that are not mentioned as the above-mentioned structures are appropriately added.
又，根據以上所記載之實施形態，電漿處理部a30具備被施加電壓之複數個電極構件。此處，電極構件例如係與電極棒a30B或電極棒a30C等對應者。加熱部a50將複數個電極構件中之一部分之電極構件加熱。根據如此之構成，由於在將複數個電極棒中之一部分選擇性地加熱之狀態下產生電漿，故可減小直至產生在電漿處理部a30內之區域間之電漿為止所需之時間之偏差。 Furthermore, according to the above-described embodiment, the plasma processing section a30 has a plurality of electrode components to which voltage is applied. Here, the electrode component corresponds to, for example, the electrode rod a30B or the electrode rod a30C. The heating section a50 heats a portion of the plurality of electrode components. According to such a configuration, since plasma is generated in a state where a portion of the plurality of electrode rods is selectively heated, the deviation of the time required until plasma is generated between regions in the plasma processing section a30 can be reduced.
又，根據以上所記載之實施形態，加熱部a50配置於電漿處理部a30 之附近。根據如此之構成，加熱部a50可有效率地將電漿處理部a30加熱。 Furthermore, according to the above-described embodiment, the heating section a50 is arranged near the plasma processing section a30. According to such a configuration, the heating section a50 can efficiently heat the plasma processing section a30.
又，根據以上所記載之實施形態，加熱部a50具備氣體流路a50A、及複數個吹出口a50B。於氣體流路a50A中流動自用於供給氣體之氣體供給源a70供給之氣體。吹出口a50B設置於氣體流路a50A之端部。又，吹出口a50B可開閉。而且，加熱部a50藉由將複數個吹出口a50B中之至少一部分選擇性地打開，而朝電漿處理部a30吹拂氣體。根據如此之構成，藉由自各個吹出口a50B選擇性地吹拂氣體，而可將電漿處理部a30內之任意之區域加熱。 Furthermore, according to the above-described implementation form, the heating section a50 has a gas flow path a50A and a plurality of blowing outlets a50B. The gas supplied from the gas supply source a70 for supplying gas flows in the gas flow path a50A. The blowing outlet a50B is provided at the end of the gas flow path a50A. Moreover, the blowing outlet a50B can be opened and closed. Moreover, the heating section a50 blows gas toward the plasma processing section a30 by selectively opening at least a portion of the plurality of blowing outlets a50B. According to such a configuration, by selectively blowing gas from each blowing outlet a50B, any area in the plasma processing section a30 can be heated.
又，根據以上所記載之實施形態，加熱部a50藉由將相互分開之複數個吹出口a50B打開，而朝電漿處理部a30吹拂氣體。根據如此之構成，由於能夠於複數個區域中同時進行加熱，故即便為具有多樣溫度分佈之電漿處理部a30，亦有效地加熱，可縮短直至在電漿處理部a30內之區域整體產生均一之電漿為止所需之時間。 Furthermore, according to the above-described implementation form, the heating section a50 opens a plurality of mutually separated blowing ports a50B to blow gas toward the plasma processing section a30. According to such a structure, since heating can be performed simultaneously in a plurality of regions, even the plasma processing section a30 with various temperature distributions can be heated effectively, and the time required until uniform plasma is generated in the entire region within the plasma processing section a30 can be shortened.
又，根據以上所記載之實施形態，電漿處理裝置具備測定部a72。測定部a72就電漿處理部a30內之每一區域測定溫度。而且，加熱部a50將由測定部a72測定到之溫度相對較低之區域加熱。根據如此之構成，藉由將因溫度較低而直至產生電漿為止所需之時間變長之區域選擇性地加熱，而可減小直至產生在電漿處理部a30內之區域間之電漿為止所需之時間之偏差，有效地縮短直至在電漿處理部a30內之區域整體產生均一之電漿為止所需之時間。 Furthermore, according to the above-described embodiment, the plasma processing device is provided with a measuring section a72. The measuring section a72 measures the temperature of each area in the plasma processing section a30. Moreover, the heating section a50 heats the area with a relatively low temperature measured by the measuring section a72. According to such a configuration, by selectively heating the area where the time required to generate plasma becomes longer due to the lower temperature, the deviation of the time required to generate plasma between the areas in the plasma processing section a30 can be reduced, and the time required to generate uniform plasma in the entire area in the plasma processing section a30 can be effectively shortened.
根據以上所記載之實施形態，於電漿處理方法中包含下述步序：將用於產生電漿且進行處理之電漿處理部a30加熱；及使用經加熱之電漿處理部a30來產生電漿。 According to the above-described implementation form, the plasma treatment method includes the following steps: heating the plasma treatment section a30 used to generate plasma and perform treatment; and using the heated plasma treatment section a30 to generate plasma.
根據如此之構成，由於在將電漿處理部a30及其附近之氣體加熱之狀態下產生電漿，故可縮短直至在電漿處理部a30內之區域整體產生電漿為止所需之時間。而且，藉由縮短直至產生電漿為止所需之時間，而各個區域中之該時間之偏差亦變小，可於區域整體產生均一之電漿。 According to such a structure, since plasma is generated while the gas in the plasma processing section a30 and its vicinity is heated, the time required until plasma is generated in the entire area within the plasma processing section a30 can be shortened. Moreover, by shortening the time required until plasma is generated, the deviation of the time in each area is also reduced, and uniform plasma can be generated in the entire area.
此外，如無特別限制，則進行各個處理之順序可變更。 In addition, unless otherwise specified, the order in which each process is performed may be changed.
又，於對上述之構成適宜追加了本案說明書所示之例之其他構成之情形下，亦即於適宜追加了未作為上述之構成而言及之本案說明書中之其他構成之情形下，亦可產生同樣之效果。 Furthermore, the same effect can be achieved when other structures shown in the description of this case are appropriately added to the above-mentioned structures, that is, when other structures in the description of this case that are not mentioned as the above-mentioned structures are appropriately added.
又，根據以上所記載之實施形態，於電漿處理方法中包含就電漿處理部a30內之每一區域測定溫度之步序。而且，將電漿處理部a30加熱之步序係將測定到之溫度相對較低之區域加熱之步序。根據如此之構成，藉由將因溫度較低而直至產生電漿為止所需之時間變長之區域選擇性地加熱，而可減小直至在產生電漿處理部a30內之區域間之電漿為止所需之時間之偏差，有效地縮短直至在電漿處理部a30內之區域整體產生均一之電漿為止所需之時間。 Furthermore, according to the above-described embodiment, the plasma treatment method includes a step of measuring the temperature of each area in the plasma treatment section a30. Furthermore, the step of heating the plasma treatment section a30 is a step of heating the area where the measured temperature is relatively low. According to such a structure, by selectively heating the area where the time required to generate plasma becomes longer due to the lower temperature, the deviation of the time required to generate plasma between the areas in the plasma treatment section a30 can be reduced, and the time required to generate uniform plasma in the area in the plasma treatment section a30 as a whole can be effectively shortened.
<第3實施形態> <Third implementation form>
<基板處理系統之整體構成> <Overall structure of substrate processing system>
圖16係概略性顯示應用電漿產生裝置之基板處理系統b900之構成之一例之俯視圖。基板處理系統b900係將作為處理對象之基板W一片接一片處理之單片式處理裝置。 FIG. 16 is a top view schematically showing an example of the structure of a substrate processing system b900 using a plasma generating device. The substrate processing system b900 is a single-wafer processing device that processes substrates W to be processed one by one.
基板W例如為半導體基板，具有圓板形狀。此外，對於基板W，除了半導體基板以外，亦可應用光罩用玻璃基板、液晶顯示用玻璃基板、電漿顯示用玻璃基板、FED(Field Emission Display，場發射顯示器)用基板、有機EL(Electro-Luminescence)顯示裝置用基板等顯示裝置用基板、光碟用基板、磁碟用基板、光磁碟用基板、陶瓷基板及態樣電池基板等各種基板。又，基板之形狀亦不限定於圓板形狀，可採用例如矩形之板狀形狀等各種形狀。 The substrate W is, for example, a semiconductor substrate having a circular plate shape. In addition, for the substrate W, in addition to semiconductor substrates, various substrates such as a glass substrate for a mask, a glass substrate for a liquid crystal display, a glass substrate for a plasma display, a substrate for a FED (Field Emission Display), a substrate for an organic EL (Electro-Luminescence) display device, a substrate for an optical disk, a substrate for a magnetic disk, a substrate for an optical magnetic disk, a ceramic substrate, and a sample battery substrate can also be applied. In addition, the shape of the substrate is not limited to a circular plate shape, and various shapes such as a rectangular plate shape can be adopted.
基板處理系統b900包含：加載台b901、分度器機器人b902、主搬送機器人b903、複數個基板處理裝置b100、及控制部b90。 The substrate processing system b900 includes: a loading platform b901, a indexer robot b902, a main transport robot b903, a plurality of substrate processing devices b100, and a control unit b90.
複數個加載台b901沿著水平之一方向排列配置。各加載台b901係用於將基板W搬出搬入基板處理系統b900之介面部。朝各加載台b901，自外部搬入收容基板W之載架C。各加載台b901係保持搬入之載架C之收容器保持機構。作為載架C，可採用將基板W收納於密閉空間之FOUP(Front Opening Unified Pod，前開式晶圓傳送盒)、SMIF(Standard Mechanical Inter Face，標準機械介面)艙、或將基板W曝露於外部大氣之OC(Open Cassette，開放式片盒)。 A plurality of loading platforms b901 are arranged in a horizontal direction. Each loading platform b901 is used to carry substrates W in and out of the interface of the substrate processing system b900. A carrier C containing substrates W is carried in from the outside toward each loading platform b901. Each loading platform b901 is a container holding mechanism that holds the carried-in carrier C. As the carrier C, a FOUP (Front Opening Unified Pod) that stores substrates W in a closed space, a SMIF (Standard Mechanical Interface) cabin, or an OC (Open Cassette) that exposes substrates W to the outside atmosphere can be used.
分度器機器人b902係在由各加載台b901保持之載架C、與主搬送機器人b903之間搬送基板W之搬送機器人。分度器機器人b902可沿著加載台b901排列之方向移動，可在與各載架C對面之位置停止。分度器機器人b902可進行自各載架C取出基板W之動作、及朝各載架C交接基板W之動作。 The indexer robot b902 is a transport robot that transports substrates W between the carriers C held by each loading platform b901 and the main transport robot b903. The indexer robot b902 can move along the direction in which the loading platforms b901 are arranged, and can stop at a position opposite to each carrier C. The indexer robot b902 can take out the substrate W from each carrier C, and can deliver the substrate W to each carrier C.
主搬送機器人b903係於分度器機器人b902與各基板處理裝置b100之間搬送基板W之搬送機器人。主搬送機器人b903亦可被稱為中心機器人。主搬送機器人b903可進行自分度器機器人b902接收基板W之動作、及朝分度器機器人b902交接基板W之動作。又，主搬送機器人b903可進行朝各基板處理裝置b100搬入基板W之動作、及自各基板處理裝置b100搬出基板W之動作。此外，於圖16之例中，基板處理系統b900包含基板載置部b904。該情形下，分度器機器人b902於加載台b901與基板載置部b904之間搬送基板W，主搬送機器人b903於基板載置部b904及各基板處理裝置b100間搬送基板W。 The main transport robot b903 is a transport robot that transports substrates W between the indexer robot b902 and each substrate processing device b100. The main transport robot b903 can also be called a central robot. The main transport robot b903 can receive substrates W from the indexer robot b902 and deliver substrates W to the indexer robot b902. In addition, the main transport robot b903 can carry substrates W into each substrate processing device b100 and carry substrates W out of each substrate processing device b100. In addition, in the example of Figure 16, the substrate processing system b900 includes a substrate loading unit b904. In this case, the indexer robot b902 transports the substrate W between the loading platform b901 and the substrate loading unit b904, and the main transport robot b903 transports the substrate W between the substrate loading unit b904 and each substrate processing device b100.
分度器機器人b902、基板載置部b904及主搬送機器人b903於各個基板處理裝置b100與加載台b901之間搬送基板W。 The indexer robot b902, substrate loading unit b904 and main transport robot b903 transport substrates W between each substrate processing device b100 and the loading platform b901.
於基板處理系統b900配置例如12個基板處理裝置b100。具體而言， 4個包含在鉛直方向積層之3個基板處理裝置b100之塔設置為包圍主搬送機器人b903之周圍。於圖16中概略性顯示3段重疊之基板處理裝置b100之1個。此外，基板處理系統b900之基板處理裝置b100之數目不限定於12個，可適宜變更。 For example, 12 substrate processing devices b100 are arranged in the substrate processing system b900. Specifically, 4 towers including 3 substrate processing devices b100 stacked in the vertical direction are arranged to surround the main transfer robot b903. FIG. 16 schematically shows one of the 3-stage overlapping substrate processing devices b100. In addition, the number of substrate processing devices b100 in the substrate processing system b900 is not limited to 12 and can be changed as appropriate.
主搬送機器人b903設置為由4個塔包圍。主搬送機器人b903將自分度器機器人b902接收之未處理之基板W搬入各基板處理裝置b100內。各基板處理裝置b100對基板W進行處理。又，主搬送機器人b903自各基板處理裝置b100搬出完成處理之基板W並交遞至分度器機器人b902。 The main transport robot b903 is set to be surrounded by 4 towers. The main transport robot b903 moves the unprocessed substrate W received from the indexer robot b902 into each substrate processing device b100. Each substrate processing device b100 processes the substrate W. In addition, the main transport robot b903 moves the processed substrate W from each substrate processing device b100 and delivers it to the indexer robot b902.
未處理之基板W自載架C由分度器機器人b902取出。而後，未處理之基板W經由例如基板載置部b904被交接至主搬送機器人b903。 The unprocessed substrate W is taken out from the carrier C by the indexer robot b902. Then, the unprocessed substrate W is transferred to the main transport robot b903 via, for example, the substrate loading unit b904.
主搬送機器人b903將該未處理之基板W搬入基板處理裝置b100。而且，基板處理裝置b100對基板W進行處理。 The main transport robot b903 transports the unprocessed substrate W into the substrate processing device b100. Then, the substrate processing device b100 processes the substrate W.
於基板處理裝置b100中完成處理之基板W由主搬送機器人b903自基板處理裝置b100取出。而且，完成處理之基板W於根據需要經由其他基板處理裝置b100之後，經由例如基板載置部b904交接至分度器機器人b902。分度器機器人b902將完成處理之基板W搬入載架C。根據以上內容，進行對於基板W之處理。 The substrate W processed in the substrate processing device b100 is taken out from the substrate processing device b100 by the main transport robot b903. Moreover, the processed substrate W is transferred to the indexer robot b902 through, for example, the substrate loading unit b904 after passing through other substrate processing devices b100 as needed. The indexer robot b902 moves the processed substrate W into the carrier C. According to the above content, the substrate W is processed.
控制部b90控制基板處理系統b900之各構成要素之動作。圖17係概略 性顯示控制部b90之內部構成之一例之功能方塊圖。控制部b90係電子電路，具有例如資料處理部b91及記憶部b92。於圖17之具體例中，資料處理部b91與記憶部b92經由匯流排b93相互連接。資料處理部b91可為例如CPU(Central Processor Unit，中央處理單元)等運算處理裝置。記憶部b92可具有非暫時性記憶部(例如ROM(Read Only Memory，唯讀記憶體)、可覆寫之記憶體或硬碟)b921及暫時性記憶部(例如RAM(Random Access Memory，隨機存取記憶體))b922。可於非暫時性記憶部b921記憶例如規定控制部b90執行之處理之程式。藉由資料處理部b91執行該程式，而控制部b90可執行由程式規定之處理。毋庸置疑，控制部b90執行之處理之一部分或全部未必必須由軟體實現，可由專用之邏輯電路等硬體執行。於圖17之例中，於匯流排b93連接記憶裝置b94、輸入部b96、顯示部b97及通訊部b98。 The control unit b90 controls the operation of each component of the substrate processing system b900. FIG. 17 is a functional block diagram schematically showing an example of the internal structure of the control unit b90. The control unit b90 is an electronic circuit, and has, for example, a data processing unit b91 and a memory unit b92. In the specific example of FIG. 17, the data processing unit b91 and the memory unit b92 are connected to each other via a bus b93. The data processing unit b91 can be, for example, a CPU (Central Processor Unit) or other computing processing device. The memory unit b92 may have a non-temporary memory unit (e.g., ROM (Read Only Memory), an overwritable memory, or a hard disk) b921 and a temporary memory unit (e.g., RAM (Random Access Memory)) b922. For example, a program that specifies the processing to be performed by the control unit b90 may be stored in the non-temporary memory unit b921. The program is executed by the data processing unit b91, and the control unit b90 may perform the processing specified by the program. Needless to say, part or all of the processing performed by the control unit b90 does not necessarily have to be implemented by software, but may be performed by hardware such as a dedicated logic circuit. In the example of FIG. 17 , the memory device b94, the input unit b96, the display unit b97 and the communication unit b98 are connected to the bus b93.
記憶部b921儲存基本程式。記憶部b922用作資料處理部b91進行特定之處理時之作業區域。記憶裝置b94係由快閃記憶體或硬碟裝置等非揮發性記憶裝置構成。輸入部b96係由各種開關或觸控面板等構成，自操作員接收處理製程條件等之輸入設定指示。顯示部b97例如由液晶顯示裝置及燈等構成，於資料處理部b91之控制下，顯示各種資訊。通訊部b98具有經由LAN(Local Area Network，區域網路)等之資料通訊功能。 The memory unit b921 stores the basic program. The memory unit b922 is used as the working area when the data processing unit b91 performs specific processing. The memory device b94 is composed of a non-volatile memory device such as a flash memory or a hard disk device. The input unit b96 is composed of various switches or touch panels, etc., and receives input setting instructions such as processing process conditions from the operator. The display unit b97 is composed of, for example, a liquid crystal display device and a lamp, etc., and displays various information under the control of the data processing unit b91. The communication unit b98 has a data communication function via a LAN (Local Area Network) and the like.
於記憶裝置b94預先設定針對圖16之基板處理系統b900之各個構成之控制之複數個模式。藉由資料處理部b91執行處理程式b94P，而選擇上述之複數個模式中之1個模式，以該模式控制各個構成。此外，處理程式 b94P可記憶於記錄媒體。若使用該記錄媒體，則可於控制部b90安裝處理程式b94P。 A plurality of control modes for each component of the substrate processing system b900 of FIG. 16 are preset in the memory device b94. The data processing unit b91 executes the processing program b94P, and one of the plurality of modes is selected to control each component in the mode. In addition, the processing program b94P can be stored in a recording medium. If the recording medium is used, the processing program b94P can be installed in the control unit b90.
此外，控制部b90可具有主控制部及複數個局部控制部。主控制部統括基板處理系統b900之整體，局部控制部就每一基板處理裝置b100設置。局部控制部可與主控制部通訊而設置，基於來自主控制部之指示而控制基板處理裝置b100。主控制部及局部控制部各者例如與圖17同樣地具有資料處理部b91及記憶部b92。 In addition, the control unit b90 may have a main control unit and a plurality of local control units. The main control unit controls the entire substrate processing system b900, and the local control unit is provided for each substrate processing device b100. The local control unit may be provided to communicate with the main control unit, and control the substrate processing device b100 based on instructions from the main control unit. Each of the main control unit and the local control unit may have a data processing unit b91 and a memory unit b92, for example, as shown in FIG. 17 .
<基板處理裝置> <Substrate processing equipment>
圖18係概略性顯示基板處理裝置b100之構成之一例之圖。此外，屬於基板處理系統b900之所有基板處理裝置b100無須全部具有圖18所示之構成，只要至少一個基板處理裝置b100具有該構成即可。 FIG. 18 is a diagram schematically showing an example of the structure of the substrate processing device b100. In addition, all substrate processing devices b100 belonging to the substrate processing system b900 do not need to have the structure shown in FIG. 18, as long as at least one substrate processing device b100 has the structure.
圖18所例示之基板處理裝置b100係對基板W進行使用電漿之處理之裝置。雖然使用電漿之處理無須特別限制，但作為具體之一例，包含去除附著於基板W之有機物之處理、或基板W之金屬蝕刻等之處理。附著於基板W之有機物例如為完成使用之阻劑膜(以下簡稱為阻劑)。該阻劑例如係用作離子注入步序用之注入遮罩者。去除阻劑之處理亦可被稱為抗蝕劑去除處理。基以下，作為一例，採用阻劑去除處理而進行說明。基板W例如為半導體基板，具有圓板形狀。基板W之尺寸雖然無特別限制，但其直徑為例如約300mm。 The substrate processing device b100 illustrated in FIG. 18 is a device for treating substrate W using plasma. Although the treatment using plasma is not particularly limited, as a specific example, it includes a treatment for removing organic matter attached to substrate W, or a treatment for metal etching of substrate W. The organic matter attached to substrate W is, for example, a resist film (hereinafter referred to as resist) used for completion. The resist is, for example, used as an implantation mask for an ion implantation step. The treatment for removing the resist can also be referred to as an anti-etching agent removal treatment. Hereinafter, as an example, the resist removal treatment is used for explanation. Substrate W is, for example, a semiconductor substrate having a circular plate shape. Although the size of substrate W is not particularly limited, its diameter is, for example, about 300 mm.
此外，圖18所示之構成可由圖16之腔室b80包圍。又，腔室b80內之壓力可大致為大氣壓(例如0.5氣壓以上、且2氣壓以下)。換言之，後述之電漿處理可為於大氣壓下進行之大氣壓電漿處理。 In addition, the structure shown in FIG. 18 can be surrounded by the chamber b80 of FIG. 16. Furthermore, the pressure in the chamber b80 can be substantially atmospheric pressure (e.g., above 0.5 atmospheres and below 2 atmospheres). In other words, the plasma treatment described below can be atmospheric pressure plasma treatment performed under atmospheric pressure.
於圖18之例中，基板處理裝置b100包含電漿產生裝置b1、基板保持部b11、噴嘴b12、及防濺罩b13。 In the example of FIG. 18 , the substrate processing device b100 includes a plasma generating device b1, a substrate holding portion b11, a nozzle b12, and a splash shield b13.
基板保持部b11以水平姿勢保持基板W。此處言及之水平姿勢係基板W之厚度方向沿著鉛直方向之姿勢。於圖18之例中，基板保持部b11包含載台b111及複數個卡盤銷b112。載台b111具有圓板形狀，設置於較基板W為鉛直下方。載台b111以其厚度方向沿著鉛直方向之姿勢設置。載台b111亦可被稱為旋轉基座。複數個卡盤銷b112豎立設置於載台b111之上表面中之外周部，且握持(夾持)基板W之周緣。此外，基板保持部b11未必必須具有卡盤銷b112。例如，基板保持部b11可吸引基板W之下表面而吸附保持基板W。 The substrate holding part b11 holds the substrate W in a horizontal position. The horizontal position mentioned here is a position in which the thickness direction of the substrate W is along the vertical direction. In the example of Figure 18, the substrate holding part b11 includes a carrier b111 and a plurality of chuck pins b112. The carrier b111 has a circular plate shape and is arranged vertically below the substrate W. The carrier b111 is arranged in a position in which its thickness direction is along the vertical direction. The carrier b111 can also be called a rotating base. A plurality of chuck pins b112 are vertically arranged on the outer peripheral portion of the upper surface of the carrier b111 and hold (clamp) the periphery of the substrate W. In addition, the substrate holding part b11 does not necessarily have to have the chuck pins b112. For example, the substrate holding part b11 can attract the lower surface of the substrate W and adsorb and hold the substrate W.
於圖18之例中，基板保持部b11進一步包含旋轉機構b113，使基板W繞旋轉軸線Q1旋轉。旋轉軸線Q1係通過基板W之中心部、且沿著鉛直方向之軸。旋轉機構b113例如包含軸b114及馬達b115。軸114之上端連結於載台b111之下表面，自載台b111之下表面沿著旋轉軸線Q1延伸。馬達b115使軸b114繞旋轉軸線Q1旋轉，且使載台b111旋轉。藉此，由複數個卡盤銷b112保持之基板W繞旋轉軸線Q1旋轉。如此之基板保持部b11亦可被稱為旋轉卡盤。 In the example of FIG. 18 , the substrate holding portion b11 further includes a rotating mechanism b113 to rotate the substrate W around the rotating axis Q1. The rotating axis Q1 is an axis passing through the center of the substrate W and along the vertical direction. The rotating mechanism b113 includes, for example, a shaft b114 and a motor b115. The upper end of the shaft 114 is connected to the lower surface of the stage b111 and extends from the lower surface of the stage b111 along the rotating axis Q1. The motor b115 rotates the shaft b114 around the rotating axis Q1 and rotates the stage b111. Thereby, the substrate W held by a plurality of chuck pins b112 rotates around the rotating axis Q1. Such a substrate holding portion b11 can also be called a rotary chuck.
噴嘴b12被用於向基板W供給處理液。噴嘴b12經由供給管b121連接於處理液供給源b124。即，供給管b121之下游端連接於噴嘴b12，供給管b121之上游端連接於處理液供給源b124。處理液供給源b124例如包含儲存處理液之槽(未圖示)，將處理液供給至供給管b121。處理液例如可使用包含鹽酸、氟酸、磷酸、硝酸、硫酸、硫酸鹽、過氧硫酸、過氧硫酸鹽、過氧化氫溶液、氫氧化四甲銨、氨與過氧化氫溶液之混合液(SC1)、鹽酸與過氧化氫溶液之混合液(SC2)或去離子水(DIW)等的液體。於本實施形態中，說明利用硫酸作為處理液之處理。 The nozzle b12 is used to supply a processing liquid to the substrate W. The nozzle b12 is connected to a processing liquid supply source b124 via a supply pipe b121. That is, the downstream end of the supply pipe b121 is connected to the nozzle b12, and the upstream end of the supply pipe b121 is connected to the processing liquid supply source b124. The processing liquid supply source b124, for example, includes a tank (not shown) for storing the processing liquid, and supplies the processing liquid to the supply pipe b121. The processing liquid may include, for example, a liquid including hydrochloric acid, fluoric acid, phosphoric acid, nitric acid, sulfuric acid, sulfate, peroxysulfuric acid, peroxysulfate, hydrogen peroxide solution, tetramethylammonium hydroxide, a mixture of ammonia and hydrogen peroxide solution (SC1), a mixture of hydrochloric acid and hydrogen peroxide solution (SC2), or deionized water (DIW). In this embodiment, the treatment using sulfuric acid as the treatment liquid is described.
於本實施形態中，主要說明用於去除形成於基板W之上表面之阻劑之處理。該情形下，作為處理液，設想包含硫酸、硫酸鹽、過氧硫酸及過氧硫酸鹽中之至少一種之液體、或包含過氧化氫之液體等。 In this embodiment, the treatment for removing the resist formed on the upper surface of the substrate W is mainly described. In this case, as the treatment liquid, it is assumed that the liquid contains at least one of sulfuric acid, sulfate, peroxysulfuric acid and peroxysulfate, or a liquid containing hydrogen peroxide, etc.
於圖18之例中，於供給管b121插裝閥b122及流量調整部b123。藉由閥b122打開，而將來自處理液供給源b124之處理液經由供給管b121供給至噴嘴b12，並自噴嘴b12之噴出口b12a噴出。即，閥b122切換處理液自處理液供給源b124向噴嘴b12之供給及供給停止。流量調整部b123調整供給管b121中流動之處理液之流量。流量調整部b123係例如質量流量控制器。 In the example of FIG. 18 , a valve b122 and a flow regulator b123 are inserted into the supply pipe b121. By opening the valve b122, the treatment liquid from the treatment liquid supply source b124 is supplied to the nozzle b12 through the supply pipe b121 and sprayed from the spray outlet b12a of the nozzle b12. That is, the valve b122 switches the supply and stop of the treatment liquid from the treatment liquid supply source b124 to the nozzle b12. The flow regulator b123 adjusts the flow rate of the treatment liquid flowing in the supply pipe b121. The flow regulator b123 is, for example, a mass flow controller.
於圖18之例中，噴嘴b12藉由噴嘴移動機構b15可移動地設置。噴嘴移動機構b15使噴嘴b12於第1處理位置與第1待機位置之間移動。第1處理 位置係噴嘴b12向基板W之主面(例如上表面)噴出處理液之位置。更具體而言，第1處理位置例如為在較基板W更為鉛直上方、且與基板W之中心部於鉛直方向上對向之位置。第1待機位置為噴嘴b12不向基板W之主面噴出處理液之位置，且為較第1處理位置更遠離基板W之位置。第1待機位置可為噴嘴b12不與主搬送機器人b120搬送基板W之搬送路徑干涉之位置。作為具體之一例，第1待機位置為較基板W之周緣更為徑向外側之位置。於圖18中顯示在第1待機位置停止之噴嘴12。 In the example of FIG. 18 , the nozzle b12 is movably arranged by a nozzle moving mechanism b15. The nozzle moving mechanism b15 moves the nozzle b12 between the first processing position and the first standby position. The first processing position is a position where the nozzle b12 sprays the processing liquid onto the main surface (e.g., the upper surface) of the substrate W. More specifically, the first processing position is, for example, a position that is more vertically above the substrate W and is opposite to the center of the substrate W in the vertical direction. The first standby position is a position where the nozzle b12 does not spray the processing liquid onto the main surface of the substrate W, and is a position farther from the substrate W than the first processing position. The first standby position may be a position where the nozzle b12 does not interfere with the transport path of the substrate W transported by the main transport robot b120. As a specific example, the first standby position is a position radially outward from the periphery of the substrate W. FIG. 18 shows the nozzle 12 stopped at the first standby position.
噴嘴移動機構b15例如具有滾珠螺桿機構或臂回轉機構等致動器。臂回轉機構包含均未圖示之臂、支持柱、及馬達。臂具有水平延伸之棒狀形狀，於臂之前端連結噴嘴b12，於臂之基端連結支持柱。支持柱沿著鉛直方向延伸，可繞其中心軸旋轉地設置。藉由馬達使支持柱旋轉，從而臂回轉，噴嘴b12繞中心軸沿著周方向移動。以第1處理位置與第1待機位置位於該噴嘴b12之移動路徑上之方式設置支持柱。 The nozzle moving mechanism b15 has an actuator such as a ball screw mechanism or an arm rotating mechanism. The arm rotating mechanism includes an arm, a support column, and a motor, all of which are not shown. The arm has a horizontally extending rod shape, and the nozzle b12 is connected to the front end of the arm, and the support column is connected to the base end of the arm. The support column extends along the vertical direction and is rotatable around its center axis. The support column is rotated by the motor, so that the arm rotates and the nozzle b12 moves in the circumferential direction around the center axis. The support column is set in a manner that the first processing position and the first standby position are located on the moving path of the nozzle b12.
若於噴嘴b12位於第1處理位置之狀態下，由基板保持部b11使基板W旋轉，並且閥b122打開，則自噴嘴b12向旋轉中之基板W之上表面噴出處理液。處理液附著於基板W之上表面，且伴隨著基板W之旋轉而於基板W之上表面擴展，且自基板W之周緣朝外側飛散。藉此，於基板W之上表面形成處理液之液膜。 When the nozzle b12 is at the first processing position, the substrate W is rotated by the substrate holding part b11 and the valve b122 is opened, the processing liquid is sprayed from the nozzle b12 onto the upper surface of the rotating substrate W. The processing liquid adheres to the upper surface of the substrate W, and spreads on the upper surface of the substrate W as the substrate W rotates, and scatters outward from the periphery of the substrate W. In this way, a liquid film of the processing liquid is formed on the upper surface of the substrate W.
於設想使用複數種處理液之情形下，噴嘴b12可對應於各種處理液而設置複數個。噴嘴b12以於基板W之上表面形成處理液之液膜之方式，將 處理液供給至基板W。 In the case where multiple processing liquids are used, multiple nozzles b12 can be provided corresponding to the various processing liquids. The nozzles b12 supply the processing liquid to the substrate W in a manner that forms a liquid film of the processing liquid on the upper surface of the substrate W.
防濺罩b13具有包圍由基板保持部b11保持之基板W之筒狀之形狀。自基板W之周緣飛散之處理液濺到防濺罩b13之內周面，沿著內周面朝鉛直下方流動。處理液例如流經未圖示之回收配管而被回收至處理液供給源b124之槽。藉此，可重複利用處理液。 The splash shield b13 has a cylindrical shape that surrounds the substrate W held by the substrate holding portion b11. The processing liquid scattered from the periphery of the substrate W splashes onto the inner peripheral surface of the splash shield b13 and flows directly below the lead along the inner peripheral surface. The processing liquid flows through a recovery pipe (not shown) and is recovered to the tank of the processing liquid supply source b124. In this way, the processing liquid can be reused.
電漿產生裝置b1係產生電漿之裝置，亦可稱為電漿源或電漿反應器。電漿產生裝置b1設置於與由基板保持部b11保持之基板W(例如上表面)於鉛直方向上對向之位置。於圖18之例中，電漿產生裝置b1設置為於較基板W之上表面更為鉛直上方覆蓋基板W整體。電漿產生裝置b1連接於電源b8，接收來自電源b8之電力而使周圍之氣體電漿化。此外，此處，作為一例，電漿產生裝置b1係於大氣壓下產生電漿之大氣壓電漿源。此處言及之大氣壓例如為標準氣壓之50%以上、且為標準氣壓之200%以下。電漿產生裝置b1之具體之構成之一例於後文詳述。 The plasma generating device b1 is a device for generating plasma, and may also be referred to as a plasma source or a plasma reactor. The plasma generating device b1 is disposed at a position vertically opposite to the substrate W (for example, the upper surface) held by the substrate holding portion b11. In the example of FIG. 18 , the plasma generating device b1 is disposed to cover the entire substrate W vertically above the upper surface of the substrate W. The plasma generating device b1 is connected to the power source b8, receives power from the power source b8, and plasmatizes the surrounding gas. In addition, here, as an example, the plasma generating device b1 is an atmospheric pressure plasma source that generates plasma under atmospheric pressure. The atmospheric pressure mentioned here is, for example, more than 50% of the standard atmospheric pressure and less than 200% of the standard atmospheric pressure. An example of the specific structure of the plasma generating device b1 will be described in detail later.
如圖18所例示般，亦可設置電漿移動機構b14。電漿移動機構b14使電漿產生裝置b1相對於由基板保持部b11保持之基板W相對移動。具體而言，電漿移動機構b14使電漿產生裝置b1於第2處理位置與第2待機位置之間往復移動。第2處理位置是指利用由電漿產生裝置b1產生之電漿對基板W進行處理時之位置。於第2處理位置，電漿產生裝置b1與基板W之上表面之間之距離為例如數mm左右。 As shown in FIG. 18 , a plasma moving mechanism b14 may also be provided. The plasma moving mechanism b14 moves the plasma generating device b1 relative to the substrate W held by the substrate holding portion b11. Specifically, the plasma moving mechanism b14 moves the plasma generating device b1 back and forth between the second processing position and the second standby position. The second processing position refers to the position when the substrate W is processed using the plasma generated by the plasma generating device b1. At the second processing position, the distance between the plasma generating device b1 and the upper surface of the substrate W is, for example, several mm.
第2待機位置為不對基板W進行使用電漿之處理時之位置，且為較第2處理位置更遠離基板W之位置。第2待機位置亦為電漿產生裝置b1與主搬送機器人b120對基板W之搬送路徑不干涉之位置。作為具體之一例，第2待機位置為較第2處理位置為鉛直方之位置。該情形下，電漿移動機構b14使電漿產生裝置b1沿著鉛直方向升降。於圖18中顯示在第2待機位置停止之電漿產生裝置b1。電漿移動機構b14例如具有滾珠螺桿機構或氣缸等移動機構。 The second standby position is a position when the substrate W is not processed using plasma, and is a position farther from the substrate W than the second processing position. The second standby position is also a position where the plasma generating device b1 and the main transport robot b120 do not interfere with the transport path of the substrate W. As a specific example, the second standby position is a position that is vertically opposite to the second processing position. In this case, the plasma moving mechanism b14 moves the plasma generating device b1 up and down along the vertical direction. FIG. 18 shows the plasma generating device b1 stopped at the second standby position. The plasma moving mechanism b14 has a moving mechanism such as a ball screw mechanism or a cylinder.
電漿產生裝置b1例如可於噴嘴b12退避至第1待機位置之狀態下，自第2待機位置向第2處理位置移動。例如，若藉由來自在第1處理位置處之噴嘴b12之處理液之噴出，於基板W之上表面形成處理液之液膜，則閥b122關閉，然後，噴嘴移動機構b15使噴嘴b12自第1處理位置移動至第1待機位置。另一方面，例如，於電漿產生裝置b1位於第2待機位置之狀態下，電源b8朝電漿產生裝置b1輸出電壓。藉此，於較第2處理位置更遠離基板W之位置，電漿產生裝置b1產生電漿。此時，例如，藉由與噴嘴b12於第1處理位置將處理液之液膜供給至基板W之上表面並行地，電漿產生裝置b1產生電漿，而可削減直至產生電漿為止之等待時間。之後，電漿移動機構b14使電漿產生裝置b1自第2待機位置向第2處理位置移動。藉此，由於在基板W之正上方不存在噴嘴b12，故可將電漿產生裝置b1更接近基板W之上表面。換言之，可將第2處理位置設定為更接近基板W。 The plasma generating device b1 can, for example, move from the second standby position to the second processing position when the nozzle b12 retreats to the first standby position. For example, if a liquid film of the processing liquid is formed on the upper surface of the substrate W by the spraying of the processing liquid from the nozzle b12 at the first processing position, the valve b122 is closed, and then the nozzle moving mechanism b15 moves the nozzle b12 from the first processing position to the first standby position. On the other hand, for example, when the plasma generating device b1 is located at the second standby position, the power supply b8 outputs a voltage to the plasma generating device b1. Thereby, the plasma generating device b1 generates plasma at a position farther from the substrate W than the second processing position. At this time, for example, by generating plasma by the plasma generating device b1 in parallel with the nozzle b12 supplying the liquid film of the processing liquid to the upper surface of the substrate W at the first processing position, the waiting time until the plasma is generated can be reduced. Thereafter, the plasma moving mechanism b14 moves the plasma generating device b1 from the second standby position to the second processing position. Thus, since there is no nozzle b12 directly above the substrate W, the plasma generating device b1 can be brought closer to the upper surface of the substrate W. In other words, the second processing position can be set closer to the substrate W.
又，藉此，於基板W之上表面之附近之位置，電漿產生裝置b1向基板W之上表面之處理液之液膜產生電漿。伴隨著該電漿之產生，而產生各 種活性物種。例如，藉由空氣電漿化，而可產生氧自由基、羥基自由基及臭氧氣體等各種活性物種。該等活性物種作用於基板W之上表面。作為具體之一例，活性物種作用於基板W之上表面之處理液(此處為硫酸)之液膜。藉此，處理液之處理性能提高。具體而言，藉由活性物種與硫酸之反應，產生處理性能(此處為氧化力)高之卡洛酸。卡洛酸亦被稱為過氧單硫酸。藉由該卡洛酸作用於基板W之抗蝕劑，而可將抗蝕劑氧化去除。 In addition, the plasma generating device b1 generates plasma toward the liquid film of the processing liquid on the upper surface of the substrate W at a position near the upper surface of the substrate W. Various active species are generated along with the generation of the plasma. For example, various active species such as oxygen free radicals, hydroxyl free radicals and ozone gas can be generated by plasmatizing the air. These active species act on the upper surface of the substrate W. As a specific example, the active species act on the liquid film of the processing liquid (here, sulfuric acid) on the upper surface of the substrate W. Thus, the processing performance of the processing liquid is improved. Specifically, carboxylic acid with high processing performance (here, oxidizing power) is generated by the reaction of the active species with sulfuric acid. Carboxylic acid is also called peroxymonosulfuric acid. The carboxylic acid acts on the anti-etching agent on the substrate W, thereby oxidizing and removing the anti-etching agent.
藉由如以上般，活性物種作用於基板W之主面上之處理液，而可提高處理液之處理性能。因此，可快速進行對於基板W之處理。 By allowing the active species to act on the processing liquid on the main surface of the substrate W as described above, the processing performance of the processing liquid can be improved. Therefore, the processing of the substrate W can be performed quickly.
<電漿產生裝置b1> <Plasma generating device b1>
其次，針對電漿產生裝置b1之各構成之更詳細之一例進行描述。圖19係概略性顯示電漿產生裝置b1之構成之一例之側剖視圖，圖20係概略性顯示電漿產生裝置b1之構成之一例之俯視圖。圖19顯示圖20之A-A剖面。於圖19及圖20之例中，電漿產生裝置b1係平面型電漿源，包含第1電極部b21及第2電極部b22。 Next, a more detailed example of each structure of the plasma generating device b1 is described. FIG. 19 is a side sectional view schematically showing an example of the structure of the plasma generating device b1, and FIG. 20 is a top view schematically showing an example of the structure of the plasma generating device b1. FIG. 19 shows the A-A section of FIG. 20. In the examples of FIG. 19 and FIG. 20, the plasma generating device b1 is a planar plasma source, including a first electrode portion b21 and a second electrode portion b22.
於圖19及圖20之例中，第1電極部b21包含複數個第1電極構件(第1線狀電極)b211及第1集合電極b212，第2電極部b22包含複數個第2電極構件(第2線狀電極)b221及第2集合電極b222。 In the examples of FIG. 19 and FIG. 20 , the first electrode portion b21 includes a plurality of first electrode components (first linear electrodes) b211 and a first collective electrode b212, and the second electrode portion b22 includes a plurality of second electrode components (second linear electrodes) b221 and a second collective electrode b222.
第1電極構件b211係由金屬材料(例如鎢)等導電性材料形成，具有沿著長度方向D1延伸之棒狀形狀(例如圓柱形狀)。複數個第1電極構件b211 排列設置於與長度方向D1交叉(此處為正交)之排列方向D2上，理想的是相互平行地設置。 The first electrode component b211 is formed of a conductive material such as a metal material (such as tungsten) and has a rod-like shape (such as a cylindrical shape) extending along the length direction D1. A plurality of first electrode components b211 are arranged in an arrangement direction D2 that intersects (orthogonal here) the length direction D1, and are ideally arranged parallel to each other.
第1集合電極b212係由金屬材料(例如鋁)等導電性材料形成，將複數個第1電極構件b211之長度方向D1之一側之端部(基端)彼此連結。於圖20之例中，第1集合電極b212具有朝長度方向D1之一側膨起之圓弧狀之平板形狀。複數個第1電極構件b211自第1集合電極b212向長度方向D1之另一側延伸。 The first collective electrode b212 is formed of a conductive material such as a metal material (e.g., aluminum), and connects the ends (base ends) of the plurality of first electrode components b211 on one side of the length direction D1. In the example of FIG. 20 , the first collective electrode b212 has a flat plate shape that is bulged toward one side of the length direction D1. The plurality of first electrode components b211 extend from the first collective electrode b212 to the other side of the length direction D1.
第2電極構件b221係由金屬材料(例如鎢)等導電性材料形成，具有沿著長度方向D1延伸之棒狀形狀(例如圓柱形狀)。複數個第2電極構件b221排列設置於排列方向D2上，理想的是相互平行地設置。第2電極構件b221各者於俯視下(即，沿著與長度方向D1及排列方向D2正交之方向D3觀察)，設置於複數個第1電極構件b211中彼此相鄰之二者之間。即，複數個第2電極構件b221於俯視下分別設置於複數個第1電極構件b211之相互之間。於圖20之例中，於俯視下，第1電極構件b211及第2電極構件b221交替排列於排列方向D2上。第1電極構件b211各者不與第2電極構件b221於方向D3上對向。 The second electrode component b221 is formed of a conductive material such as a metal material (e.g., tungsten), and has a rod-like shape (e.g., a cylindrical shape) extending along the length direction D1. A plurality of second electrode components b221 are arranged in the arrangement direction D2, and are ideally arranged parallel to each other. Each of the second electrode components b221 is arranged between two adjacent first electrode components b211 in a top view (i.e., observed along a direction D3 orthogonal to the length direction D1 and the arrangement direction D2). That is, the plurality of second electrode components b221 are respectively arranged between the plurality of first electrode components b211 in a top view. In the example of FIG. 20 , in a top view, the first electrode components b211 and the second electrode components b221 are alternately arranged in the arrangement direction D2. Each of the first electrode components b211 is not opposite to the second electrode components b221 in the direction D3.
第2集合電極b222係由金屬材料(例如鋁)等導電性材料形成，將複數個第2電極構件b221之長度方向D1之另一側之端部(基端)彼此連結。於圖20之例中，第2集合電極b222朝與第1集合電極b212為相反側膨起，且具有與第1集合電極b212大致同徑之圓弧狀之平板形狀。複數個第2電極構 件b221自第2集合電極b222向長度方向D1之一側延伸。 The second collective electrode b222 is formed of a conductive material such as a metal material (e.g., aluminum), and connects the ends (base ends) of the other side of the length direction D1 of the plurality of second electrode components b221 to each other. In the example of FIG. 20 , the second collective electrode b222 bulges toward the opposite side of the first collective electrode b212 and has a flat plate shape of an arc having a diameter substantially the same as that of the first collective electrode b212. The plurality of second electrode components b221 extend from the second collective electrode b222 to one side of the length direction D1.
於圖19及圖20之例中，各第1電極構件b211由第1介電構件b31覆蓋。複數個第1介電構件b31係由石英或陶瓷等介電體材料形成。例如，各第1介電構件b31具有沿著長度方向D1延伸之筒狀形狀，第1電極構件b211沿著長度方向D1***於第1介電構件b31。圖示之第1介電構件b31亦可被稱為第1介電管。藉由第1介電構件b31覆蓋第1電極構件b211，而可防止因第1電極構件b211被電漿濺射而基板W被污染。 In the examples of FIG. 19 and FIG. 20 , each first electrode member b211 is covered by a first dielectric member b31. A plurality of first dielectric members b31 are formed of a dielectric material such as quartz or ceramic. For example, each first dielectric member b31 has a cylindrical shape extending along the length direction D1, and the first electrode member b211 is inserted into the first dielectric member b31 along the length direction D1. The illustrated first dielectric member b31 can also be referred to as a first dielectric tube. By covering the first electrode member b211 with the first dielectric member b31, the substrate W can be prevented from being contaminated by plasma sputtering of the first electrode member b211.
於圖19及圖20之例中，各第2電極構件b221由第2介電構件b32覆蓋。複數個第2介電構件b32係由石英或陶瓷等介電體材料形成。例如，各第2介電構件b32具有沿著長度方向D1延伸之筒狀形狀，第2電極構件b221沿著長度方向D1***於第2介電構件b32。圖示之第2介電構件b32亦可被稱為第2介電管。藉由第2介電構件b32覆蓋第2電極構件b221，而可防止因第2電極構件b221被電漿濺射而基板W被污染。 In the examples of FIG. 19 and FIG. 20, each second electrode member b221 is covered by a second dielectric member b32. A plurality of second dielectric members b32 are formed of dielectric materials such as quartz or ceramic. For example, each second dielectric member b32 has a cylindrical shape extending along the length direction D1, and the second electrode member b221 is inserted into the second dielectric member b32 along the length direction D1. The second dielectric member b32 shown in the figure can also be called a second dielectric tube. By covering the second electrode member b221 with the second dielectric member b32, the substrate W can be prevented from being contaminated due to the second electrode member b221 being sputtered by plasma.
於圖19及圖20之例中，在電漿產生裝置b1設置有介電構件b33。介電構件b33係由石英或陶瓷等介電體材料形成。於圖示之例中，介電構件b33具有板狀形狀。介電構件b33係以該厚度方向沿著方向D3之姿勢設置。於圖20之例中，介電構件b33之主面b33a及主面b33b於俯視下具有圓形狀。介電構件b33之厚度(主面b33a與主面b33b之間之距離)設定為例如數百μm(例如300μm)左右。 In the examples of FIG. 19 and FIG. 20, a dielectric component b33 is provided in the plasma generating device b1. The dielectric component b33 is formed of a dielectric material such as quartz or ceramic. In the illustrated example, the dielectric component b33 has a plate-like shape. The dielectric component b33 is provided in a posture along the direction D3 in the thickness direction. In the example of FIG. 20, the main surface b33a and the main surface b33b of the dielectric component b33 have a circular shape in a top view. The thickness of the dielectric component b33 (the distance between the main surface b33a and the main surface b33b) is set to, for example, several hundred μm (for example, 300 μm).
第1電極部b21及第1介電構件b31設置於介電構件b33之主面b33a側，第2電極部b22及第2介電構件b32設置於介電構件b33之主面b33b側。具體而言，第1介電構件b31設置於介電構件b33之主面b33a側，第2介電構件b32設置於介電構件b33之主面b33b側。 The first electrode portion b21 and the first dielectric component b31 are disposed on the main surface b33a side of the dielectric component b33, and the second electrode portion b22 and the second dielectric component b32 are disposed on the main surface b33b side of the dielectric component b33. Specifically, the first dielectric component b31 is disposed on the main surface b33a side of the dielectric component b33, and the second dielectric component b32 is disposed on the main surface b33b side of the dielectric component b33.
電漿產生裝置b1於基板處理裝置b100中，以主面b33a朝向處理對象(此處為基板W)之姿勢設置。具體而言，電漿產生裝置b1以方向D3沿著鉛直方向、且主面b33a朝向基板W之上表面之姿勢設置。該電漿產生裝置b1與基板W於鉛直方向上對向。 The plasma generating device b1 is set in the substrate processing device b100 with the main surface b33a facing the processing object (here, the substrate W). Specifically, the plasma generating device b1 is set with the direction D3 along the vertical direction and the main surface b33a facing the upper surface of the substrate W. The plasma generating device b1 and the substrate W are opposite in the vertical direction.
如圖19所例示般，可於電漿產生裝置b1設置保持構件b34。此外，於圖20中，為了避免圖式繁雜，而省略保持構件b34。保持構件保持構件b34係由氟系樹脂等絕緣材料形成，一體地保持第1電極部b21、第2電極部b22、第1介電構件b31、第2介電構件b32及介電構件b33。保持構件b34於俯視下具有與第1集合電極b212及第2集合電極b222大致同徑之環形狀，於方向D3夾持第1集合電極b212及第2集合電極b222。 As shown in FIG19, a holding member b34 can be provided in the plasma generating device b1. In addition, in FIG20, the holding member b34 is omitted to avoid complexity of the figure. Holding member The holding member b34 is formed of an insulating material such as a fluorine resin, and integrally holds the first electrode portion b21, the second electrode portion b22, the first dielectric member b31, the second dielectric member b32, and the dielectric member b33. The holding member b34 has a ring shape with a diameter substantially the same as that of the first collective electrode b212 and the second collective electrode b222 in a plan view, and clamps the first collective electrode b212 and the second collective electrode b222 in a direction D3.
於圖19之例中，第1介電構件b31之前端部由保持構件b34保持。具體而言，第1介電構件b31之前端部被埋設於保持構件b34。因此，由第1電極構件b211及第1介電構件b31構成之部分之兩端由保持構件b34保持。藉此，可對該部分進行兩端保持。於圖19之例中，第2介電構件b32之前端部亦由保持構件b34保持。因此，保持構件b34亦可對由第2電極構件b221及第2介電構件b32構成之部分進行兩端保持。 In the example of FIG. 19 , the front end of the first dielectric member b31 is held by the holding member b34. Specifically, the front end of the first dielectric member b31 is buried in the holding member b34. Therefore, both ends of the portion formed by the first electrode member b211 and the first dielectric member b31 are held by the holding member b34. In this way, the portion can be held at both ends. In the example of FIG. 19 , the front end of the second dielectric member b32 is also held by the holding member b34. Therefore, the holding member b34 can also hold both ends of the portion formed by the second electrode member b221 and the second dielectric member b32.
第1電極部b21及第2電極部b22電性連接於電漿用之電源b8。更具體而言，第1電極部b21之第1集合電極b212經由配線b81電性連接於電源b8之第1輸出端b8a，第2電極部b22之第2集合電極b222經由配線b82電性連接於電源b8之第2輸出端b8b。電源b8具有例如反相器電路等開關電源電路，朝第1電極部b21與第2電極部b22之間輸出電漿用之電壓。作為更具體之一例，電源b8將高頻電壓作為電漿用之電壓輸出至第1電極部b21與第2電極部b22之間。又，電源b8為例如脈衝電源，可於複數個週期各者中之導通期間將高頻電壓輸出至第1電極部b21與第2電極部b22之間。藉此，電漿主要於導通期間中點亮。該電源b8之輸出係由控制部b90控制。因此，電漿產生裝置b1可謂由控制部b90控制。 The first electrode portion b21 and the second electrode portion b22 are electrically connected to a power source b8 for plasma. More specifically, the first collective electrode b212 of the first electrode portion b21 is electrically connected to a first output terminal b8a of the power source b8 via a wiring b81, and the second collective electrode b222 of the second electrode portion b22 is electrically connected to a second output terminal b8b of the power source b8 via a wiring b82. The power source b8 has a switching power source circuit such as an inverter circuit, and outputs a voltage for plasma between the first electrode portion b21 and the second electrode portion b22. As a more specific example, the power supply b8 outputs a high-frequency voltage as a voltage for plasma between the first electrode portion b21 and the second electrode portion b22. In addition, the power supply b8 is, for example, a pulse power supply, which can output a high-frequency voltage between the first electrode portion b21 and the second electrode portion b22 during the conduction period in each of a plurality of cycles. Thereby, the plasma is mainly lit during the conduction period. The output of the power supply b8 is controlled by the control unit b90. Therefore, the plasma generating device b1 can be said to be controlled by the control unit b90.
藉由電源b8朝第1電極部b21與第2電極部b22之間輸出電壓，而於第1電極構件b211與第2電極構件b221之間產生電漿用之電場。相應於該電場，第1電極構件b211及第2電極構件b221之周圍之氣體電漿化。反言之，藉由電源b8對第1電極部b21與第2電極部b22之間施加將該氣體電漿化之程度之電壓。於電源b8為脈衝電源之情形下，該電壓為例如b10kV以上且數十kHz左右之高頻電壓。此處言及之頻率例如為上述週期之倒數，以下亦稱為脈衝頻率。 By outputting a voltage between the first electrode portion b21 and the second electrode portion b22 by the power source b8, an electric field for plasma is generated between the first electrode component b211 and the second electrode component b221. In response to the electric field, the gas around the first electrode component b211 and the second electrode component b221 is plasmatized. In other words, a voltage of a degree that plasmatizes the gas is applied between the first electrode portion b21 and the second electrode portion b22 by the power source b8. In the case where the power source b8 is a pulse power source, the voltage is, for example, a high-frequency voltage of more than b10 kV and about tens of kHz. The frequency mentioned here is, for example, the inverse of the above period, and is also referred to as the pulse frequency below.
根據上述之平面型電漿產生裝置b1，沿著水平之長度方向D1延伸之第1電極構件b211及第2電極構件b221交替排列於水平之排列方向D2上。因此，電漿產生裝置b1可於俯視下在寬廣之範圍內產生電漿。 According to the above-mentioned planar plasma generating device b1, the first electrode member b211 and the second electrode member b221 extending along the horizontal length direction D1 are alternately arranged in the horizontal arrangement direction D2. Therefore, the plasma generating device b1 can generate plasma in a wide range when viewed from above.
<電漿產生裝置b1之溫度> <Temperature of plasma generating device b1>
若電漿產生裝置b1接收來自電源b8之電力而產生電漿，則因由第1電極部b21及第2電極部b22產生之焦耳熱、及由電漿所致之發熱，而電漿產生裝置b1之溫度上升。若該溫度過度上升，則可能產生耐熱性等諸多問題。於例如第1電極構件b211及第2電極構件b221為鎢之情形下，若溫度超過攝氏600度，則第1電極構件b211及第2電極構件b221紅熱，可能產生耐熱性之問題。 If the plasma generating device b1 receives power from the power source b8 to generate plasma, the temperature of the plasma generating device b1 rises due to the Joule heat generated by the first electrode portion b21 and the second electrode portion b22 and the heat generated by the plasma. If the temperature rises excessively, many problems such as heat resistance may occur. For example, in the case where the first electrode component b211 and the second electrode component b221 are tungsten, if the temperature exceeds 600 degrees Celsius, the first electrode component b211 and the second electrode component b221 become red hot, which may cause heat resistance problems.
於本實施形態中，為了抑制或避免超過如此之容許值之溫度上升，而著眼於第1電極構件b211與第2電極構件b221之間之節距。以下，導入第1電極構件b211彼此之間之節距(稱為電極節距)，作為跟第1電極構件b211與第2電極構件b221之間之節距相關聯之參數。此處，第1電極構件b211與第2電極構件b221之間之俯視之節距為電極節距之一半。 In this embodiment, in order to suppress or avoid the temperature rise exceeding such an allowable value, the pitch between the first electrode component b211 and the second electrode component b221 is focused. Hereinafter, the pitch between the first electrode components b211 (referred to as the electrode pitch) is introduced as a parameter associated with the pitch between the first electrode component b211 and the second electrode component b221. Here, the pitch between the first electrode component b211 and the second electrode component b221 in a top view is half of the electrode pitch.
發明者製作電極節距不同之複數個電漿產生裝置b1，使用各電漿產生裝置b1進行了實驗。更具體而言，以電漿產生裝置b1之溫度(此處為第1電極構件b211及第2電極構件b221之溫度)為攝氏400度之方式，控制電源b8之輸出電壓(大小及頻率)，測定電壓及電流。圖21至圖23係顯示作為實驗結果之電壓波形及電流波形之一例之圖。圖21顯示電極節距為6mm時之實驗結果，圖22顯示電極節距為10mm時之實驗結果，圖23顯示電極節距為12mm時之實驗結果。 The inventors made a plurality of plasma generating devices b1 with different electrode pitches and conducted experiments using each plasma generating device b1. More specifically, the temperature of the plasma generating device b1 (here, the temperature of the first electrode component b211 and the second electrode component b221) was set to 400 degrees Celsius, and the output voltage (size and frequency) of the power supply b8 was controlled to measure the voltage and current. Figures 21 to 23 are diagrams showing an example of voltage waveforms and current waveforms as experimental results. Figure 21 shows the experimental results when the electrode pitch is 6mm, Figure 22 shows the experimental results when the electrode pitch is 10mm, and Figure 23 shows the experimental results when the electrode pitch is 12mm.
此處，使用脈衝電源作為電源b8。該情形下，如圖21至圖23所例示般，高周波電流就每一特定週期流通。這是因為電源b8於特定週期內之導通期間將高頻電壓施加於第1電極部b21與第2電極部b22之間。於圖21至圖23之例中，顯示1週期(=50μ秒：即脈衝頻率=20kHz)中之電壓波形及電流波形，電壓在正的範圍內變動之期間與在負的範圍內變動之期間各者相當於導通期間。於圖21至圖23之例中，導通期間為3μs。此處，以溫度為攝氏400度之方式，控制電源b8之輸出電壓之大小 Here, a pulse power source is used as the power source b8. In this case, as shown in the examples of Figures 21 to 23, a high-frequency current flows in each specific cycle. This is because the power source b8 applies a high-frequency voltage between the first electrode portion b21 and the second electrode portion b22 during the conduction period in the specific cycle. In the examples of Figures 21 to 23, the voltage waveform and the current waveform in 1 cycle (=50μ seconds: that is, the pulse frequency = 20kHz) are shown, and the period when the voltage changes in the positive range and the period when the voltage changes in the negative range are each equivalent to the conduction period. In the examples of Figures 21 to 23, the conduction period is 3μs. Here, the output voltage of power supply b8 is controlled at a temperature of 400 degrees Celsius.
下表顯示自圖21至圖23之實驗結果提取之電壓之絕對值之最大值Vmax及電流之絕對值之最大值Imax。 The following table shows the maximum absolute value of voltage Vmax and the maximum absolute value of current Imax extracted from the experimental results of Figures 21 to 23.
由表1可理解為，電極節距越寬，將溫度設為攝氏400度所需之電力越大。反言之，可知若電力相同，則電極節距越窄，溫度越高。 From Table 1, we can understand that the wider the electrode pitch, the greater the power required to set the temperature to 400 degrees Celsius. Conversely, if the power is the same, the narrower the electrode pitch, the higher the temperature.
圖24係就每一電極節距例示電漿產生裝置b1之溫度與向電漿產生裝置b1之輸出電力之關係之圖。於圖24之例中顯示3個圖形G1~G3。圖形G1表示電極節距為6mm時之該關係，圖形G2表示電極節距為10mm時之該關係，圖形G3表示電極節距為12mm時之該關係。 FIG24 is a graph showing the relationship between the temperature of the plasma generating device b1 and the output power to the plasma generating device b1 for each electrode pitch. In the example of FIG24, three graphs G1 to G3 are shown. Graph G1 shows the relationship when the electrode pitch is 6 mm, graph G2 shows the relationship when the electrode pitch is 10 mm, and graph G3 shows the relationship when the electrode pitch is 12 mm.
由圖24亦可理解為，若電力相同，則電極節距越寬，電漿產生裝置b1之溫度越低。又，由圖24可理解為，若電極節距相同，則電力越大，電漿產生裝置b1之溫度越高。即，電漿產生裝置b1之溫度對於電力具有正相關關係，對於電極節距具有負相關關係。 It can also be understood from Figure 24 that if the power is the same, the wider the electrode pitch, the lower the temperature of the plasma generating device b1. Also, it can be understood from Figure 24 that if the electrode pitch is the same, the greater the power, the higher the temperature of the plasma generating device b1. That is, the temperature of the plasma generating device b1 has a positive correlation with the power and a negative correlation with the electrode pitch.
如此，根據發明者之實驗可知，電漿產生裝置b1之溫度不僅依存於電力之大小，亦依存於電極節距之寬窄。 Thus, according to the inventor's experiments, the temperature of the plasma generating device b1 depends not only on the size of the electric power, but also on the width of the electrode pitch.
為此，於本實施形態中，以電漿產生裝置b1之溫度為容許值(例如攝氏600度)以下之方式，設定電極節距。以下，針對電極節距之設計方法之例詳述。 To this end, in this embodiment, the electrode pitch is set in such a way that the temperature of the plasma generating device b1 is below the allowable value (e.g., 600 degrees Celsius). The following is a detailed description of an example of the design method of the electrode pitch.
圖25係顯示電漿產生裝置b1之設計方法之一例之流程圖。設計者決定針對朝電漿產生裝置b1供給之電力的基準電力(步驟S1：電力設定步序)。此處言及之基準電力係於後述之步驟S3中用於電極節距之決定之電力。例如，設計者可採用電源b8可輸出之最大電力或額定電力作為基準電力。 FIG. 25 is a flowchart showing an example of a design method for the plasma generating device b1. The designer determines the reference power for the power supplied to the plasma generating device b1 (step S1: power setting step). The reference power mentioned here is the power used for determining the electrode pitch in the later-described step S3. For example, the designer may use the maximum power or rated power that the power source b8 can output as the reference power.
其次，設計者決定溫度之容許值(步驟S2：容許溫度設定步序)。設計者可基於電漿產生裝置b1之耐熱性之觀點，決定溫度之容許值。例如，容許值被決定為攝氏600度。 Next, the designer determines the allowable value of the temperature (step S2: allowable temperature setting step). The designer can determine the allowable value of the temperature based on the heat resistance of the plasma generating device b1. For example, the allowable value is determined to be 600 degrees Celsius.
其次，設計者基於基準電力輸出時之電漿產生裝置b1之溫度與電極節距之對應關係(例如圖24)，以溫度為容許值以下之方式決定電極節距(步驟S3：電極節距設計步序)。對應關係可藉由例如實驗或模擬等預先獲得。 Next, the designer determines the electrode pitch based on the correspondence between the temperature of the plasma generating device b1 and the electrode pitch when the reference power is output (e.g., FIG. 24 ) so that the temperature is below the allowable value (step S3: electrode pitch design sequence). The correspondence can be obtained in advance, for example, by experiments or simulations.
於該步驟S3中，可行的是，溫度之容許值越高，設計者將電極節距決定為越窄。此乃因電極節距越寬，越難以產生電漿。例如，自開始供給電力至穩定產生電漿之期間變長。因此，基於在更短期間於電漿產生裝置b1之周圍穩定產生電漿之觀點，電極節距較窄者為佳。因此，於步驟S3中，只要溫度為容許值以下，則設計者可將電極節距決定為盡量窄。作為更具體之一例，設計者可決定溫度為容許值以下之電極節距之範圍之最小值作為電極節距。 In step S3, it is feasible that the higher the allowable value of temperature, the narrower the electrode pitch is determined by the designer. This is because the wider the electrode pitch is, the more difficult it is to generate plasma. For example, the period from the start of power supply to the stable generation of plasma becomes longer. Therefore, from the perspective of stably generating plasma around the plasma generating device b1 in a shorter period of time, a narrower electrode pitch is better. Therefore, in step S3, as long as the temperature is below the allowable value, the designer can determine the electrode pitch to be as narrow as possible. As a more specific example, the designer can determine the minimum value of the range of electrode pitches where the temperature is below the allowable value as the electrode pitch.
如以上般，可根據電極節距之設計，將電漿產生裝置b1之溫度設為容許值以下。可採用攝氏600度作為溫度之容許值。藉此，於第1電極構件b211及第2電極構件b221為鎢之情形下，可抑制或避免第1電極構件b211及第2電極構件b221之紅熱。 As described above, the temperature of the plasma generating device b1 can be set below the allowable value according to the design of the electrode pitch. 600 degrees Celsius can be used as the allowable value of the temperature. In this way, when the first electrode component b211 and the second electrode component b221 are tungsten, the red heat of the first electrode component b211 and the second electrode component b221 can be suppressed or avoided.
且說，向電漿產生裝置b1之輸出電力可由電源b8之輸出電壓控制。為此，亦基於輸出電壓之觀點預先說明電極節距。亦即，電極節距可以電源b8輸出最大電壓(或額定電壓)時之電漿產生裝置b1之溫度為容許溫度以下之方式決定。 Furthermore, the output power to the plasma generating device b1 can be controlled by the output voltage of the power source b8. For this purpose, the electrode pitch is also described in advance based on the viewpoint of the output voltage. That is, the electrode pitch can be determined in such a way that the temperature of the plasma generating device b1 is below the allowable temperature when the power source b8 outputs the maximum voltage (or rated voltage).
<基於電漿效果之電極節距之設計> <Design of electrode pitch based on plasma effect>
於上述之例中，電漿產生裝置b1被利用於基板W之阻劑去除。因此，可著眼於使用電漿產生裝置b1之阻劑去除處理，而決定電極節距。以下，具體地說明。 In the above example, the plasma generating device b1 is used for resist removal of the substrate W. Therefore, the electrode pitch can be determined by focusing on the resist removal process using the plasma generating device b1. This will be described in detail below.
首先，針對向電漿產生裝置b1之電力進行描述。若電力變大，則電漿產生裝置b1可以更高之電子密度產生電漿。若電漿之電子密度變高，則電漿之發光強度變高。藉此，藉由電漿而產生之活性物種之量亦可增加。由於可藉由活性物種之增加，使更多個活性物種作用於基板W上之處理液，故可提高基板W之阻劑之去除速度，可更快速地將阻劑之剝離率設為100%。 First, the power to the plasma generating device b1 is described. If the power becomes larger, the plasma generating device b1 can generate plasma at a higher electron density. If the electron density of the plasma becomes higher, the luminescence intensity of the plasma becomes higher. In this way, the amount of active species generated by the plasma can also be increased. Since more active species can act on the processing liquid on the substrate W by increasing the active species, the removal speed of the resist on the substrate W can be increased, and the stripping rate of the resist can be set to 100% more quickly.
圖26係顯示電漿之發光強度與電力之關係之一例之圖。於圖26之例中，3種標繪點以互不相同之形狀表示。第1標繪點以黑圓表示，表示電極節距為12mm時之該關係。第2標繪點以黑四角表示，表示電極節距為10mm時之該關係。第3標繪點以黑三角表示，表示電極節距為6mm時之該關係。 FIG. 26 is a graph showing an example of the relationship between the luminescence intensity of plasma and the electric power. In the example of FIG. 26, three plot points are represented by different shapes. The first plot point is represented by a black circle, which indicates the relationship when the electrode pitch is 12 mm. The second plot point is represented by a black square, which indicates the relationship when the electrode pitch is 10 mm. The third plot point is represented by a black triangle, which indicates the relationship when the electrode pitch is 6 mm.
由圖26可理解為，電力越大，電漿之發光強度越高。即，電漿之發光強度對於電力具有正相關關係。另一方面，電漿之發光強度幾乎不依存於電極節距。因此，若電力相同，則電極節距較寬時之電漿之發光強度與電極節距較窄時之電漿發光強度大致相同。 As can be understood from Figure 26, the greater the power, the higher the luminescence intensity of the plasma. That is, the luminescence intensity of the plasma has a positive correlation with the power. On the other hand, the luminescence intensity of the plasma is almost independent of the electrode pitch. Therefore, if the power is the same, the luminescence intensity of the plasma when the electrode pitch is wider is roughly the same as the luminescence intensity of the plasma when the electrode pitch is narrower.
由於電漿之發光強度越高，活性物種之產生量越大，故由電漿所致之效果(以下稱為電漿效果)變高。此處，由於去除基板W之阻劑，故可採用阻劑之剝離率作為表示電漿效果之指標。 Since the higher the luminescence intensity of the plasma, the greater the amount of active species produced, the effect caused by the plasma (hereinafter referred to as the plasma effect) becomes higher. Here, since the resist of the substrate W is removed, the stripping rate of the resist can be used as an indicator of the plasma effect.
由於電漿效果對於電漿之發光強度具有正相關關係，電漿之發光強度對於電力具有正相關關係，故電漿效果對於電力具有正相關關係。另一方面，由於電漿之發光強度幾乎不依存於電極節距之寬窄，故電漿效果亦幾乎不依存於電極節距之寬窄。 Since the plasma effect has a positive correlation with the luminescence intensity of the plasma, and the luminescence intensity of the plasma has a positive correlation with the power, the plasma effect has a positive correlation with the power. On the other hand, since the luminescence intensity of the plasma is almost independent of the width of the electrode pitch, the plasma effect is also almost independent of the width of the electrode pitch.
又，如上述般，電力越大，電漿產生裝置b1之溫度越高，但另一方面，電極節距越寬，電漿產生裝置b1之溫度越低。 Also, as mentioned above, the greater the power, the higher the temperature of the plasma generating device b1, but on the other hand, the wider the electrode pitch, the lower the temperature of the plasma generating device b1.
基於以上之見解，可知雖然增大電力而提高電漿效果(此處為剝離率)，但藉由擴大電極節距，而可緩和電漿之溫度上升。下表顯示實驗結果之一例。 Based on the above insights, it can be seen that although increasing the power will increase the plasma effect (here, the stripping rate), the temperature rise of the plasma can be mitigated by expanding the electrode pitch. The following table shows an example of experimental results.
根據表2，於電極節距為10mm時，電漿產生裝置b1之溫度為攝氏 420度時之剝離率為87%，溫度為攝氏500度時之剝離率為100%。另一方面，於電極節距為12mm時，電漿產生裝置b1之溫度為攝氏430度時之剝離率為100%。即，藉由將電極節距設定為較寬，則可降低以用於將剝離率設為100%時之電力對電漿產生裝置b1供給時之電漿產生裝置b1之溫度。 According to Table 2, when the electrode pitch is 10 mm, the stripping rate of the plasma generating device b1 is 87% at 420 degrees Celsius, and the stripping rate is 100% at 500 degrees Celsius. On the other hand, when the electrode pitch is 12 mm, the stripping rate of the plasma generating device b1 is 100% at 430 degrees Celsius. That is, by setting the electrode pitch wider, the temperature of the plasma generating device b1 when the power used to set the stripping rate to 100% is supplied to the plasma generating device b1 can be reduced.
為此，於電極節距之設計中，可基於電漿效果設定基準電力，基於該基準電力決定電極節距。具體而言，於步驟S1中，設計者可決定電漿效果(此處為剝離率)為特定效果以上之電力作為基準電力。該基準電力係藉由例如實驗或模擬決定。由於電漿效果與電漿之發光強度具有正相關關係，故亦可謂設計者以電漿之發光強度為特定強度以上之方式決定電力作為基準電力。 For this reason, in the design of the electrode pitch, a reference power can be set based on the plasma effect, and the electrode pitch can be determined based on the reference power. Specifically, in step S1, the designer can determine the power at which the plasma effect (here, the stripping rate) is above a specific effect as the reference power. The reference power is determined by, for example, experiments or simulations. Since the plasma effect has a positive correlation with the luminescence intensity of the plasma, it can also be said that the designer determines the power as the reference power in a manner that the luminescence intensity of the plasma is above a specific intensity.
電漿效果如上述般與向電漿產生裝置b1之電力具有正相關關係，但另一方面，幾乎不依存於電極節距。因此，即便為電極節距尚未決定之狀態，於步驟S1中，亦可基於特定電漿效果(電漿之發光強度)，決定基準電力。其次，設計者執行步驟S2及步驟S3。藉此，可決定電極節距。 As mentioned above, the plasma effect has a positive correlation with the power to the plasma generating device b1, but on the other hand, it is almost independent of the electrode pitch. Therefore, even if the electrode pitch has not been determined, in step S1, the reference power can be determined based on the specific plasma effect (the luminous intensity of the plasma). Next, the designer performs steps S2 and S3. In this way, the electrode pitch can be determined.
如以上般，於本實施形態中，基於電漿效果而非使用電極節距之資訊，決定針對供給至電漿產生裝置b1之電力之基準電力。而後，於步驟S3中，基於基準電力與溫度之容許值決定電極節距。該設計方法係藉由著眼於電漿之發光強度幾乎不依存於電極節距而首次被想到者。即，於假若電漿之發光強度亦依存於電極節距之情形下，於步驟S1中，無法無關於電 極節距而決定電力。因此，難以決定用於兼顧溫度及電漿效果之電力及電極節距。例如，必須要有如一面變更電力及電極節距之值、一面將電漿效果及溫度最佳化之複雜之方法。 As described above, in this embodiment, the reference power for the power supplied to the plasma generating device b1 is determined based on the plasma effect without using information on the electrode pitch. Then, in step S3, the electrode pitch is determined based on the reference power and the allowable value of the temperature. This design method was first conceived by focusing on the fact that the luminous intensity of plasma is almost independent of the electrode pitch. That is, if the luminous intensity of plasma is also dependent on the electrode pitch, in step S1, the power cannot be determined independently of the electrode pitch. Therefore, it is difficult to determine the power and electrode pitch for taking both the temperature and the plasma effect into consideration. For example, a complex method is required to optimize the plasma effect and temperature while changing the power and electrode pitch values.
相對於此，於本實施形態中，在步驟S1中，基於電漿效果而非使用電極節距之值，來決定基準電力，在步驟S3中，基於該基準電力與溫度之容許值，決定電極節距，故而可以非常簡單之方法設計電極節距。又，根據如上述般設計之電漿產生裝置b1，即便將用於獲得特定電漿效果之電力供給至電漿產生裝置b1，亦可將電漿產生裝置b1之溫度設為容許值以下。 In contrast, in this embodiment, in step S1, the reference power is determined based on the plasma effect rather than the value of the electrode pitch, and in step S3, the electrode pitch is determined based on the reference power and the allowable value of the temperature, so the electrode pitch can be designed in a very simple way. Moreover, according to the plasma generating device b1 designed as described above, even if the power for obtaining a specific plasma effect is supplied to the plasma generating device b1, the temperature of the plasma generating device b1 can be set below the allowable value.
<電漿產生裝置b1A> <Plasma generating device b1A>
圖27係概略性顯示電漿產生裝置b1A之構成之一例之俯視圖，圖28及圖29係概略性顯示電漿產生裝置b1A之構成之一例之側剖視圖。圖28顯示圖27之C-C剖面，圖29顯示圖27之D-D剖面。如圖27至圖29所示，電漿產生裝置b1A包含第1電極部b21、第2電極部b22、及介電構件b35。 FIG27 is a top view schematically showing an example of the structure of the plasma generating device b1A, and FIG28 and FIG29 are side sectional views schematically showing an example of the structure of the plasma generating device b1A. FIG28 shows the C-C section of FIG27, and FIG29 shows the D-D section of FIG27. As shown in FIG27 to FIG29, the plasma generating device b1A includes a first electrode portion b21, a second electrode portion b22, and a dielectric member b35.
介電構件b35係由例如石英及陶瓷等介電體材料形成，覆蓋第1電極構件b211及第2電極構件b221之兩者。於圖示之例中，介電構件b35具有板狀形狀，以其厚度方向沿著方向D3之姿勢配置。介電構件b35具有第1主面b35a、第2主面b35b及側面b35c。第1主面b35a及第2主面b35b係於方向D3彼此相向之面，例如係與方向D3正交之平坦面。側面b35c係將第1主面b35a之周緣及第2主面b35b之周緣相連之面。於圖27之例中，由於介 電構件b35具有圓板形狀，故第1主面b35a及第2主面b35b為圓狀之平面，側面b35c為圓筒面。介電構件b35之厚度為例如5mm左右。 The dielectric member b35 is formed of a dielectric material such as quartz and ceramic, and covers both the first electrode member b211 and the second electrode member b221. In the illustrated example, the dielectric member b35 has a plate-like shape, and is arranged with its thickness direction along the direction D3. The dielectric member b35 has a first main surface b35a, a second main surface b35b, and a side surface b35c. The first main surface b35a and the second main surface b35b are surfaces facing each other in the direction D3, for example, flat surfaces orthogonal to the direction D3. The side surface b35c is a surface connecting the periphery of the first main surface b35a and the periphery of the second main surface b35b. In the example of FIG. 27, since the dielectric component b35 has a disk shape, the first main surface b35a and the second main surface b35b are circular planes, and the side surface b35c is a cylindrical surface. The thickness of the dielectric component b35 is, for example, about 5 mm.
於介電構件b35形成：供各第1電極構件b211***之第1孔b36、及供各第2電極構件b221***之第2孔b37。 The dielectric component b35 is formed with: a first hole b36 for inserting each first electrode component b211, and a second hole b37 for inserting each second electrode component b221.
各第1孔b36沿著長度方向D1延伸，其一側之端於介電構件b35之側面b35c中開口。各第1電極構件b211沿著長度方向D1***第1孔b36。由於如上述般介電構件b35覆蓋各第1電極構件b211，故可防止因各第1電極構件b211被電漿濺射而基板W被污染。 Each first hole b36 extends along the length direction D1, and one end thereof opens in the side surface b35c of the dielectric member b35. Each first electrode member b211 is inserted into the first hole b36 along the length direction D1. Since the dielectric member b35 covers each first electrode member b211 as described above, it is possible to prevent the substrate W from being contaminated due to plasma sputtering of each first electrode member b211.
各第2孔b37沿著長度方向D1延伸，其另一側之端於介電構件b35之側面b35c中開口。各第2電極構件b221沿著長度方向D1***第2孔b37。由於如上述般介電構件b35覆蓋各各第2電極構件b221，故可防止因各第2電極構件b221被電漿濺射而基板W被污染。 Each second hole b37 extends along the length direction D1, and its other end opens in the side surface b35c of the dielectric member b35. Each second electrode member b221 is inserted into the second hole b37 along the length direction D1. Since the dielectric member b35 covers each second electrode member b221 as described above, it is possible to prevent the substrate W from being contaminated by plasma sputtering of each second electrode member b221.
於圖29之例中，複數個第1電極構件b211及複數個第2電極構件b221設置於同一平面上。因此，複數個第1孔b36及複數個第2孔b37亦形成於同一平面上。 In the example of FIG. 29 , the plurality of first electrode components b211 and the plurality of second electrode components b221 are disposed on the same plane. Therefore, the plurality of first holes b36 and the plurality of second holes b37 are also formed on the same plane.
於圖29之例中，第1電極構件b211與介電構件b35之第1主面b35a之間隔較第1電極構件b211與介電構件b35之第2主面b35b之間隔為窄。同樣，第2電極構件b221與介電構件b35之第1主面b35a之間隔較第2電極構 件b221與介電構件b35之第2主面b35b之間隔為窄。即，第1電極構件b211及第2電極構件b221設置於較第2主面b35b更靠近第1主面b35a之位置。因此，第1孔b36及第2孔b37亦形成於較第2主面b35b更靠近第1主面b35a之位置。第1電極構件b211與第1主面b35a之間之距離設定為例如0.3mm左右，第2電極構件b221與第1主面b35a之間之距離亦設定為例如0.3mm左右。 In the example of FIG. 29 , the distance between the first electrode member b211 and the first main surface b35a of the dielectric member b35 is narrower than the distance between the first electrode member b211 and the second main surface b35b of the dielectric member b35. Similarly, the distance between the second electrode member b221 and the first main surface b35a of the dielectric member b35 is narrower than the distance between the second electrode member b221 and the second main surface b35b of the dielectric member b35. That is, the first electrode member b211 and the second electrode member b221 are arranged at positions closer to the first main surface b35a than the second main surface b35b. Therefore, the first hole b36 and the second hole b37 are also formed at a position closer to the first main surface b35a than the second main surface b35b. The distance between the first electrode component b211 and the first main surface b35a is set to, for example, about 0.3 mm, and the distance between the second electrode component b221 and the first main surface b35a is also set to, for example, about 0.3 mm.
電漿產生裝置b1A以第1主面b35a朝向處理對象(此處為基板W)之姿勢配置。第1主面b35a附近之氣體如後述般藉由電漿產生裝置b1A而電漿化，由該電漿產生之活性物種作用於處理對象。 The plasma generating device b1A is arranged with the first main surface b35a facing the processing object (here, the substrate W). The gas near the first main surface b35a is plasmatized by the plasma generating device b1A as described later, and the active species generated by the plasma act on the processing object.
於圖27之例中，第1集合電極b212及第2集合電極b222設置於較介電構件b35更為外側。因此，第1電極構件b211之基端部自介電構件b35之側面b35c朝外側突出且連接於第1集合電極b212，第2電極構件b221之基端部自介電構件b35之側面b35c朝外側突出且連接於第2集合電極b222。第1集合電極b212及第2集合電極b222連接於電漿用之電源b8(參照圖27)，藉由該電源b8之電壓輸出，而於第1電極構件b211與第2電極構件b221之間產生電漿用之電場。於上述之例中，由於第1電極構件b211與第1主面b35a之間隔及第2電極構件b221與第1主面b35a之間隔較窄，故電場容易作用於介電構件b35之第1主面b35a附近之氣體，可容易使該氣體電漿化。 In the example of FIG. 27 , the first collective electrode b212 and the second collective electrode b222 are disposed outside the dielectric member b35. Therefore, the base end of the first electrode member b211 protrudes outward from the side surface b35c of the dielectric member b35 and is connected to the first collective electrode b212, and the base end of the second electrode member b221 protrudes outward from the side surface b35c of the dielectric member b35 and is connected to the second collective electrode b222. The first collective electrode b212 and the second collective electrode b222 are connected to the power source b8 for plasma (refer to FIG. 27 ), and the voltage output of the power source b8 generates an electric field for plasma between the first electrode component b211 and the second electrode component b221. In the above example, since the interval between the first electrode component b211 and the first main surface b35a and the interval between the second electrode component b221 and the first main surface b35a are narrow, the electric field easily acts on the gas near the first main surface b35a of the dielectric component b35, and the gas can be easily plasmatized.
另一方面，於上述之例中，由於第1電極構件b211與第2主面b35b之 間隔及第2電極構件b221與第2主面b35b之間隔較寬，故電場不易作用於第2主面b35b附近之氣體。因此，亦可抑制無助於基板W之處理之不必要之電漿之產生。而且，由於亦可增大介電構件b35之第1主面b35a與第2主面b35b之間之厚度，故可提高介電構件b35之強度及剛性。 On the other hand, in the above example, since the interval between the first electrode component b211 and the second main surface b35b and the interval between the second electrode component b221 and the second main surface b35b are relatively wide, the electric field is not easy to act on the gas near the second main surface b35b. Therefore, the generation of unnecessary plasma that does not contribute to the processing of the substrate W can also be suppressed. In addition, since the thickness between the first main surface b35a and the second main surface b35b of the dielectric component b35 can also be increased, the strength and rigidity of the dielectric component b35 can be improved.
且說，由於電漿產生裝置b1A之介電構件b35具有覆蓋第1電極構件b211及第2電極構件b221之兩者之板狀形狀，故介電構件b35之體積大於電漿產生裝置b1之第1介電構件b31、第2介電構件b32及介電構件b33之總體積。因此，為了於電漿產生裝置b1A中產生電漿，而電源b8必須將更大之電力供給至第1電極部b22與第2電極部b22之間。作為更具體之一例，電源b8之輸出電壓設定為15kV左右，電源b8之輸出頻率設定為60kHz左右以下。 Furthermore, since the dielectric member b35 of the plasma generating device b1A has a plate-like shape covering both the first electrode member b211 and the second electrode member b221, the volume of the dielectric member b35 is larger than the total volume of the first dielectric member b31, the second dielectric member b32, and the dielectric member b33 of the plasma generating device b1. Therefore, in order to generate plasma in the plasma generating device b1A, the power source b8 must supply a larger power between the first electrode portion b22 and the second electrode portion b22. As a more specific example, the output voltage of the power source b8 is set to about 15kV, and the output frequency of the power source b8 is set to about 60kHz or less.
又，於上述之例中，由於單一之介電構件b35覆蓋第1電極構件b211及第2電極構件b221，故電漿產生裝置b1A之形狀與電漿產生裝置b1相比更容易。尤其是，於上述之例中，由於介電構件b35之第1主面b35a為平坦，故與在第1介電構件b31與介電構件b33形成階差形狀之電漿產生裝置b1相比，其形狀更容易。因此，即便處理對象即基板W上之處理液揮發且附著於電漿產生裝置b1A(例如第1主面b35a)，亦容易將電漿產生裝置b1A洗淨而去除該處理液。 Furthermore, in the above example, since the single dielectric member b35 covers the first electrode member b211 and the second electrode member b221, the shape of the plasma generating device b1A is easier than that of the plasma generating device b1. In particular, in the above example, since the first main surface b35a of the dielectric member b35 is flat, the shape is easier than that of the plasma generating device b1 in which the first dielectric member b31 and the dielectric member b33 form a step shape. Therefore, even if the processing liquid on the processing object, i.e., the substrate W, evaporates and adheres to the plasma generating device b1A (e.g., the first main surface b35a), it is easy to clean the plasma generating device b1A and remove the processing liquid.
<電漿產生裝置b1A之溫度> <Temperature of plasma generating device b1A>
發明者確認於該電漿產生裝置b1A中，亦與電漿產生裝置b1同樣 地，溫度不僅依存於電力，亦依存於電極節距之寬窄。具體而言，發明者製作電極節距不同之複數歌電漿產生裝置b1A，利用各電漿產生裝置b1A進行了實驗。此處，發明者製作各個電極節距為10mm、12mm之電漿產生裝置b1A，以電漿產生裝置b1A之溫度為攝氏200度之方式控制電源b8之輸出電壓。下表顯示實驗結果。 The inventor confirmed that in the plasma generating device b1A, as in the plasma generating device b1, the temperature depends not only on the power but also on the width of the electrode pitch. Specifically, the inventor made a plurality of plasma generating devices b1A with different electrode pitches and conducted experiments using each plasma generating device b1A. Here, the inventor made plasma generating devices b1A with electrode pitches of 10mm and 12mm, and controlled the output voltage of the power supply b8 in such a way that the temperature of the plasma generating device b1A was 200 degrees Celsius. The following table shows the experimental results.
由表3可理解為，電極節距越寬，將溫度設為攝氏200度所需之電力越大。反言之，可知若電力相同，則電極節距越窄，溫度越高。 From Table 3, we can understand that the wider the electrode pitch, the more power is required to set the temperature to 200 degrees Celsius. Conversely, if the power is the same, the narrower the electrode pitch, the higher the temperature.
為此，於電漿產生裝置b1A中，亦以溫度為容許值(例如攝氏600度)以下之方式，設定電極節距。電極節距之設計方法之一例與圖25同樣。換言之，亦可將電漿產生裝置b1中之電極節距之設計方法應用於電漿產生裝置b1A。 For this purpose, in the plasma generating device b1A, the electrode pitch is also set in such a way that the temperature is below the allowable value (e.g., 600 degrees Celsius). An example of the design method of the electrode pitch is the same as that in FIG. 25. In other words, the design method of the electrode pitch in the plasma generating device b1 can also be applied to the plasma generating device b1A.
又，發明者確認於電漿產生裝置b1A中亦與電漿產生裝置b1同樣地，雖然增大電力而提高電漿效果(此處為阻劑之剝離率)，但藉由擴大電極節距，而可緩和電漿產生裝置b1A之電漿之溫度上升。下表顯示實驗結 果之一例。 In addition, the inventors have confirmed that in the plasma generating device b1A, similarly to the plasma generating device b1, although the plasma effect (here, the stripping rate of the resistor) is improved by increasing the power, the temperature rise of the plasma in the plasma generating device b1A can be mitigated by increasing the electrode pitch. The following table shows an example of the experimental results.
根據表4，於電極節距為10mm時，電漿產生裝置b1之溫度為攝氏200度時之剝離率為70%，增大電力而溫度為攝氏250度時之剝離率為100%。即，藉由增大電力，而可提高電漿效果。另一方面，於電極節距為12mm時，電漿產生裝置b1之溫度為攝氏200度時之剝離率為100%。即，雖然增大電力而提高電漿效果，但藉由將電極節距設定為較寬，而可緩和電漿之溫度上升。 According to Table 4, when the electrode pitch is 10mm, the stripping rate is 70% when the temperature of the plasma generating device b1 is 200 degrees Celsius, and the stripping rate is 100% when the power is increased and the temperature is 250 degrees Celsius. That is, the plasma effect can be improved by increasing the power. On the other hand, when the electrode pitch is 12mm, the stripping rate is 100% when the temperature of the plasma generating device b1 is 200 degrees Celsius. That is, although the plasma effect is improved by increasing the power, the temperature rise of the plasma can be alleviated by setting the electrode pitch to be wider.
又，電漿產生裝置b1A之第1電極部b21及第2電極部b22之形狀與電漿產生裝置b1同樣，藉由第1電極部b21與第2電極部b22之間之電場而產生電漿。因此，推測於電漿產生裝置b1A中亦與電漿產生裝置b1同樣地，電漿之發光強度不依存於電極節距之寬窄。因此，於電漿產生裝置b1A中亦然，於電極節距尚未決定之狀態下，可基於特定電漿效果(電漿之發光強度、即剝離率)決定基準電力(步驟S1)。其次，設計者執行步驟S2及步 驟S3。藉此，可以非常簡單之方法決定電極節距。 In addition, the shapes of the first electrode portion b21 and the second electrode portion b22 of the plasma generating device b1A are the same as those of the plasma generating device b1, and plasma is generated by the electric field between the first electrode portion b21 and the second electrode portion b22. Therefore, it is inferred that in the plasma generating device b1A, the luminous intensity of the plasma does not depend on the width of the electrode pitch, as in the plasma generating device b1. Therefore, in the plasma generating device b1A, when the electrode pitch is not determined, the reference power can be determined based on a specific plasma effect (luminous intensity of the plasma, i.e., the stripping rate) (step S1). Next, the designer performs steps S2 and S3. Thus, the electrode pitch can be determined in a very simple way.
如以上般，於電漿產生裝置b1A中，亦可與電漿產生裝置b1同樣地決定電極節距。 As described above, in the plasma generating device b1A, the electrode pitch can be determined in the same manner as in the plasma generating device b1.
此處，為了參考，顯示圖30至圖33。圖30至圖33係概略性顯示針對電漿產生裝置b1A之實驗結果之例之圖。具體而言，圖30係顯示脈寬與溫度之關係之圖，圖31係顯示脈寬與電壓之關係之圖，圖32係顯示脈寬與電流之關係之圖，圖33係顯示脈寬與瞬時電力之關係之圖。於各圖中，以圖形G1表示電極節距為12mm時之圖形，以圖形G2表示電極節距為10mm時之圖形。 Here, for reference, Figures 30 to 33 are shown. Figures 30 to 33 are diagrams schematically showing examples of experimental results for the plasma generating device b1A. Specifically, Figure 30 is a diagram showing the relationship between pulse width and temperature, Figure 31 is a diagram showing the relationship between pulse width and voltage, Figure 32 is a diagram showing the relationship between pulse width and current, and Figure 33 is a diagram showing the relationship between pulse width and instantaneous power. In each figure, the graph G1 represents the graph when the electrode pitch is 12 mm, and the graph G2 represents the graph when the electrode pitch is 10 mm.
於各圖中，採用脈寬作為橫軸。由於脈寬越寬，將電力供給至電漿產生裝置b1A之時間越長，故朝電漿產生裝置b1供給之電力(投入電力)具有脈寬越寬則越大之傾向。由圖30可理解為，若電力相同，則電極節距越寬，電漿產生裝置b1A之溫度越低。又，由圖30可理解為，若電力為相同程度，則電極節距越寬，電壓越大。 In each figure, pulse width is used as the horizontal axis. Since the wider the pulse width, the longer the time to supply power to the plasma generating device b1A, the power supplied to the plasma generating device b1 (input power) tends to be larger as the pulse width is wider. It can be understood from Figure 30 that if the power is the same, the wider the electrode pitch, the lower the temperature of the plasma generating device b1A. In addition, it can be understood from Figure 30 that if the power is the same, the wider the electrode pitch, the greater the voltage.
<關於以上所記載之實施形態之變化例> <About the variation of the implementation form described above>
於本實施形態中，加熱部設置為於俯視下覆蓋電漿處理部a30整體，但加熱部可設置為於俯視下僅覆蓋電漿處理部a30一部分。該情形下，較理想為預先藉由測定部a72所進行之溫度之測定，特定溫度相對較低之區域，於該區域之附近設置加熱部。又，若將加熱部對於電漿處理部a30可 拆裝地設置，則亦可應對溫度相對第之區域不同之情形。 In this embodiment, the heating part is arranged to cover the entire plasma processing part a30 in a plan view, but the heating part may be arranged to cover only a part of the plasma processing part a30 in a plan view. In this case, it is more desirable to preliminarily determine a region with a relatively low temperature by measuring the temperature by the measuring part a72, and to arrange the heating part near the region. In addition, if the heating part is detachably arranged with respect to the plasma processing part a30, it is also possible to cope with the situation where the temperature of the regions is relatively different.
又，於本實施形態中，加熱部藉由吹拂熱風而將電漿處理部a30加熱，但加熱方法不限定於如此之方法，例如，可藉由僅具備電熱式加熱器或發熱燈之加熱部將電漿處理部a30加熱。 Furthermore, in this embodiment, the heating part heats the plasma processing part a30 by blowing hot air, but the heating method is not limited to such a method. For example, the plasma processing part a30 can be heated by a heating part having only an electric heater or a heating lamp.
又，於本實施形態中，顯示將因電漿處理部a30中之電漿之作用而產生之活性物種供給至液膜a101A之情形，但可為該活性物種直接作用於未形成液膜a101A之基板W之上表面之情形。 Furthermore, in this embodiment, the active species generated by the action of the plasma in the plasma processing section a30 is supplied to the liquid film a101A, but it may be a case where the active species directly acts on the upper surface of the substrate W on which the liquid film a101A is not formed.
於以上所記載之實施形態中，有亦針對各個構成要素之材質、材料、尺寸、形狀、相對配置關係或實施之條件等進行記載之情形，但其等於全部層面中為一例，並非限定性者。 In the above described implementation forms, there are cases where the material, material, size, shape, relative arrangement relationship or implementation conditions of each component are also described, but it is equivalent to an example in all aspects and is not restrictive.
因此，可於本案說明書所揭示之技術之範圍內設想未顯示例子之無數個變化例、及均等物。例如，於將至少1個構成要素變化之情形下，包含追加之情形或省略之情形。 Therefore, numerous variations and equivalents not shown in the examples can be envisioned within the scope of the technology disclosed in the specification of this case. For example, when at least one constituent element is changed, it includes additions or omissions.
又，於以上所記載之實施形態中，於無特別指定而記載了材料名稱等之情形下，只要不產生矛盾，則於該材料中含有其他添加物、例如含有合金等。 Furthermore, in the above-described embodiments, when material names are described without special designation, other additives, such as alloys, may be contained in the material unless there is any contradiction.
如以上般，詳細地說明了電漿產生裝置b1、b1A及電漿產生裝置 b1、b1A之設計方法，但上述之說明於所有態樣中為例示，該電漿產生裝置b1、b1A及電漿產生裝置b1、b1A之設計方法不限定於其。未例示之無數個變化例應理解為在不脫離本揭示之範圍下可設想到者。於上述各實施形態及各變化例所說明之各構成只要不相互矛盾，則能夠適宜地組合或省略。 As described above, the plasma generating devices b1, b1A and the design method of the plasma generating devices b1, b1A are described in detail, but the above description is for illustration in all aspects, and the plasma generating devices b1, b1A and the design method of the plasma generating devices b1, b1A are not limited thereto. The numerous variations not shown should be understood as those that can be imagined without departing from the scope of the present disclosure. The various structures described in the above embodiments and various variations can be appropriately combined or omitted as long as they do not contradict each other.
於上述之例中，雖然基於材料之耐熱性之觀點，設定電漿產生裝置b1、b1A之溫度之容許值，但未必限定於此。例如，於電漿產生裝置b1、b1A位於第2處理位置之狀態下，可將未達處理液沸騰溫度的溫度設定為容許值，或可基於對基板W之熱損之程度，設定溫度之容許值。 In the above example, although the allowable value of the temperature of the plasma generating devices b1 and b1A is set based on the heat resistance of the material, it is not necessarily limited to this. For example, when the plasma generating devices b1 and b1A are located at the second processing position, the temperature that does not reach the boiling temperature of the processing liquid can be set as the allowable value, or the allowable value of the temperature can be set based on the degree of heat damage to the substrate W.
又，於上述之例中，雖然於電漿產生裝置b1設置介電構件b33，但可不設置介電構件b33，又，第1電極部b21及第2電極部b22可設置於同一平面。 Furthermore, in the above example, although the dielectric component b33 is provided in the plasma generating device b1, the dielectric component b33 may not be provided, and the first electrode portion b21 and the second electrode portion b22 may be provided on the same plane.
又，例如，於電漿產生裝置b1A中，第1電極部b21及第2電極部b22可於方向D3上設置於互不相同之位置。具體而言，第1電極構件b211及第2電極構件b221可於方向D3上設置於互不相同之位置。 Furthermore, for example, in the plasma generating device b1A, the first electrode portion b21 and the second electrode portion b22 can be disposed at different positions in the direction D3. Specifically, the first electrode component b211 and the second electrode component b221 can be disposed at different positions in the direction D3.
又，對於基板W之處理未必限定於阻劑去除處理。例如，除了去除金屬膜以外，亦可應用於能夠藉由活性物種使處理液之處理性能提高之所有處理。 Furthermore, the processing of the substrate W is not necessarily limited to the resist removal processing. For example, in addition to removing the metal film, it can also be applied to all processing that can improve the processing performance of the processing solution by using active species.
又，亦未必必須對基板W供給處理液。例如，作為使用電漿之處理，可使電漿或活性物種對於基板W之上表面直接作用。作為如此之處理之一例，可舉出基板W之表面改質處理。該情形下，作為表示電漿效果之指標，可採用將液體供給至基板W之主面時之該主面上之液體之接觸角。 Furthermore, it is not necessary to supply the processing liquid to the substrate W. For example, as a treatment using plasma, the plasma or active species can be directly applied to the upper surface of the substrate W. As an example of such a treatment, the surface modification treatment of the substrate W can be cited. In this case, as an indicator of the plasma effect, the contact angle of the liquid on the main surface of the substrate W when the liquid is supplied to the main surface can be used.
又，電漿產生裝置b1、b1A未必必須用於基板W之處理，可用於其他處理對象。 Furthermore, the plasma generating devices b1 and b1A do not necessarily have to be used for processing the substrate W, but can be used for other processing objects.
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