TWI813950B - Substrate processing method - Google Patents
Substrate processing method Download PDFInfo
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- TWI813950B TWI813950B TW110106261A TW110106261A TWI813950B TW I813950 B TWI813950 B TW I813950B TW 110106261 A TW110106261 A TW 110106261A TW 110106261 A TW110106261 A TW 110106261A TW I813950 B TWI813950 B TW I813950B
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- 239000000758 substrate Substances 0.000 title claims abstract description 261
- 238000003672 processing method Methods 0.000 title claims abstract description 13
- 238000012545 processing Methods 0.000 claims abstract description 207
- 239000007788 liquid Substances 0.000 claims abstract description 183
- 230000002093 peripheral effect Effects 0.000 claims abstract description 116
- 239000007921 spray Substances 0.000 claims abstract description 24
- 238000005507 spraying Methods 0.000 claims 1
- 238000005530 etching Methods 0.000 abstract description 33
- 238000000034 method Methods 0.000 description 24
- 230000008569 process Effects 0.000 description 21
- 238000005516 engineering process Methods 0.000 description 10
- 238000001514 detection method Methods 0.000 description 9
- 230000000694 effects Effects 0.000 description 9
- 239000000470 constituent Substances 0.000 description 7
- 230000032258 transport Effects 0.000 description 7
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 6
- 239000013256 coordination polymer Substances 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 4
- 239000012530 fluid Substances 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- 230000009471 action Effects 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- QOSATHPSBFQAML-UHFFFAOYSA-N hydrogen peroxide;hydrate Chemical compound O.OO QOSATHPSBFQAML-UHFFFAOYSA-N 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000014509 gene expression Effects 0.000 description 2
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- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 150000007524 organic acids Chemical class 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
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- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000007723 transport mechanism Effects 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
- B05B1/00—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means
- B05B1/02—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means designed to produce a jet, spray, or other discharge of particular shape or nature, e.g. in single drops, or having an outlet of particular shape
- B05B1/04—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means designed to produce a jet, spray, or other discharge of particular shape or nature, e.g. in single drops, or having an outlet of particular shape in flat form, e.g. fan-like, sheet-like
- B05B1/044—Slits, i.e. narrow openings defined by two straight and parallel lips; Elongated outlets for producing very wide discharges, e.g. fluid curtains
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
- B05B13/00—Machines or plants for applying liquids or other fluent materials to surfaces of objects or other work by spraying, not covered by groups B05B1/00 - B05B11/00
- B05B13/02—Means for supporting work; Arrangement or mounting of spray heads; Adaptation or arrangement of means for feeding work
- B05B13/04—Means for supporting work; Arrangement or mounting of spray heads; Adaptation or arrangement of means for feeding work the spray heads being moved during spraying operation
- B05B13/0405—Means for supporting work; Arrangement or mounting of spray heads; Adaptation or arrangement of means for feeding work the spray heads being moved during spraying operation with reciprocating or oscillating spray heads
- B05B13/041—Means for supporting work; Arrangement or mounting of spray heads; Adaptation or arrangement of means for feeding work the spray heads being moved during spraying operation with reciprocating or oscillating spray heads with spray heads reciprocating along a straight line
- B05B13/0415—Means for supporting work; Arrangement or mounting of spray heads; Adaptation or arrangement of means for feeding work the spray heads being moved during spraying operation with reciprocating or oscillating spray heads with spray heads reciprocating along a straight line the angular position of the spray heads relative to the straight line being modified during the reciprocating movement
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
- B05B3/00—Spraying or sprinkling apparatus with moving outlet elements or moving deflecting elements
- B05B3/02—Spraying or sprinkling apparatus with moving outlet elements or moving deflecting elements with rotating elements
- B05B3/021—Spraying or sprinkling apparatus with moving outlet elements or moving deflecting elements with rotating elements with means for regulating the jet relative to the horizontal angular position of the nozzle, e.g. for spraying non circular areas by changing the elevation of the nozzle or by varying the nozzle flow-rate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02021—Edge treatment, chamfering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Weting (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
本發明之課題在於提高蝕刻輪廓之自由度。 本發明之基板處理方法包括如下工序：使基板旋轉；使用中央噴嘴向旋轉之基板之中央部噴出第1處理液；及使用周緣噴嘴向旋轉之基板之周緣部噴出第2處理液，俯視時該周緣部包圍中央部；周緣噴嘴從相對於基板之主表面傾斜之方向，順著基板之旋轉方向噴出第2處理液，且周緣噴嘴向如下位置之基板之周緣部噴出第2處理液，即，俯視時從連結基板之中心與中央噴嘴之線，順著基板之旋轉方向前進半周後之位置。The object of the present invention is to improve the degree of freedom of etching contours. The substrate processing method of the present invention includes the following steps: rotating the substrate; using a central nozzle to spray a first processing liquid to the central part of the rotating substrate; and using a peripheral nozzle to spray the second processing liquid to the peripheral part of the rotating substrate. When viewed from above, the substrate processing method includes: The peripheral part surrounds the central part; the peripheral nozzle sprays the second processing liquid along the rotation direction of the substrate from a direction inclined with respect to the main surface of the substrate, and the peripheral nozzle sprays the second processing liquid toward the peripheral part of the substrate at the following position, namely, When viewed from above, the position is half a revolution along the direction of rotation of the substrate from the line connecting the center of the substrate and the central nozzle.
Description
本案說明書中所揭示之技術係關於一種基板處理方法。作為處理對象之基板例如包含半導體基板、液晶顯示裝置用基板、有機EL(electroluminescence，電致發光)顯示裝置等平板顯示器(FPD，flat panel display)用基板、光碟用基板、磁碟用基板、磁光碟用基板、光罩用基板、陶瓷基板或太陽能電池用基板等。The technology disclosed in the description of this case relates to a substrate processing method. Examples of substrates to be processed include semiconductor substrates, substrates for liquid crystal display devices, substrates for flat panel displays (FPD) such as organic EL (electroluminescence) display devices, substrates for optical discs, substrates for magnetic discs, and magnetic discs. Optical disc substrates, photomask substrates, ceramic substrates, solar cell substrates, etc.
以往，於半導體基板(以下簡稱為「基板」)之製造工序中，會使用基板處理裝置對基板進行各種處理。該處理包含去除該基板之上表面之蝕刻處理。 [背景技術文獻] [專利文獻]In the past, in the manufacturing process of semiconductor substrates (hereinafter referred to as "substrates"), substrate processing equipment was used to perform various processes on the substrates. The processing includes etching to remove the upper surface of the substrate. [Background technical documents] [Patent Document]
[專利文獻1]日本專利6064875號公報[Patent Document 1] Japanese Patent No. 6064875
[發明所欲解決之問題][Problem to be solved by the invention]
於上述蝕刻處理中，需要各種蝕刻輪廓。例如，有時需要用以抵消前一工序中之蝕刻不均之蝕刻輪廓。In the above etching process, various etching profiles are required. For example, sometimes an etching profile is needed to offset uneven etching in the previous process.
於是，業者想到例如於基板之中央部與周緣部進行蝕刻輪廓差異較大之蝕刻處理，藉此，一面抵消蝕刻之不均，一面進行基板處理。Therefore, the industry has thought of performing an etching process with a large difference in etching profiles between the central portion and the peripheral portion of the substrate, thereby offsetting the uneven etching while processing the substrate.
本案說明書中所揭示之技術係鑒於如上所述之問題而完成，其係一種用以提高基板處理中之蝕刻輪廓之自由度之技術。 [解決問題之技術手段]The technology disclosed in the specification of this case was completed in view of the above-mentioned problems, and it is a technology for improving the degree of freedom of etching profiles in substrate processing. [Technical means to solve problems]
本案說明書中所揭示之與基板處理方法相關之技術之第1態樣包括如下工序：使保持於基板保持部之基板旋轉；使用中央噴嘴向旋轉之上述基板之中央部噴出第1處理液；及使用周緣噴嘴向旋轉之上述基板之周緣部噴出第2處理液，俯視時該周緣部包圍上述中央部；上述周緣噴嘴從相對於上述基板之主表面傾斜之方向，順著上述基板之旋轉方向噴出上述第2處理液，上述周緣噴嘴向處於如下位置之上述基板之周緣部噴出上述第2處理液，即，俯視時從連結上述基板之中心與上述中央噴嘴之線，順著上述基板之旋轉方向前進半周後之位置。The first aspect of the technology related to the substrate processing method disclosed in the specification of this case includes the following steps: rotating the substrate held by the substrate holding portion; using a central nozzle to spray the first processing liquid toward the center of the rotating substrate; and A peripheral nozzle is used to spray the second processing liquid to the peripheral portion of the rotating substrate, and the peripheral portion surrounds the central portion when viewed from above; the peripheral nozzle is sprayed from a direction inclined relative to the main surface of the substrate along the rotation direction of the substrate. As for the second processing liquid, the peripheral nozzle sprays the second processing liquid toward the peripheral portion of the substrate at a position along the rotation direction of the substrate from a line connecting the center of the substrate and the central nozzle when viewed from above. The position after advancing half a week.
本案說明書中所揭示之技術之第2態樣包括如下工序：使保持於基板保持部之基板旋轉；使用中央噴嘴向旋轉之上述基板之中央部噴出第1處理液；使用周緣噴嘴向旋轉之上述基板之周緣部噴出第2處理液；檢測上述第2處理液之液膜於上述基板之周緣部之徑向寬度，即液膜寬度；及基於檢測出之上述液膜寬度來控制旋轉之上述基板之轉速、及從上述周緣噴嘴噴出之上述第2處理液之噴出量；上述周緣噴嘴從相對於上述基板之主表面傾斜之方向，順著上述基板之旋轉方向噴出上述第2處理液。The second aspect of the technology disclosed in the specification of this case includes the following steps: rotating the substrate held by the substrate holding portion; using a central nozzle to spray the first processing liquid toward the center of the rotating substrate; and using a peripheral nozzle to spray the first processing liquid onto the rotating substrate. The second processing liquid is ejected from the peripheral part of the substrate; the radial width of the liquid film of the second processing liquid on the peripheral part of the substrate is detected, that is, the liquid film width; and the rotation of the substrate is controlled based on the detected liquid film width. The rotation speed and the ejection amount of the second processing liquid ejected from the peripheral nozzle; the peripheral nozzle ejects the second processing liquid from a direction inclined with respect to the main surface of the substrate along the rotation direction of the substrate.
本案說明書中所揭示之技術之第3態樣與第1或第2態樣相關，其中於上述基板之中央部形成上述第1處理液之液膜之後，上述周緣噴嘴噴出上述第2處理液。A third aspect of the technology disclosed in the specification of this case is related to the first or second aspect, in which the peripheral nozzle sprays the second processing liquid after a liquid film of the first processing liquid is formed on the central portion of the substrate.
本案說明書中所揭示之技術之第4態樣與第1至第3態樣中之任一態樣相關，其中上述第1處理液與上述第2處理液係不同種類之處理液。The fourth aspect of the technology disclosed in the specification of this case is related to any one of the first to third aspects, wherein the above-mentioned first treatment liquid and the above-mentioned second treatment liquid are different types of treatment liquids.
本案說明書中所揭示之技術之第5態樣與第1至第4態樣中之任一態樣相關，其中上述中央噴嘴可沿上述基板之上述徑向擺動。 [發明之效果]The fifth aspect of the technology disclosed in the specification of this case is related to any one of the first to fourth aspects, in which the above-mentioned central nozzle can swing along the above-mentioned radial direction of the above-mentioned substrate. [Effects of the invention]
根據本案說明書中所揭示之技術之第1至第5態樣，可提高基板處理中之蝕刻輪廓之自由度。According to the first to fifth aspects of the technology disclosed in the specification of this application, the degree of freedom of etching profiles in substrate processing can be improved.
又，藉由以下所示之詳細說明與隨附圖式，進而明確本案說明書中所揭示之技術相關之目的、特徵、形態及優點。In addition, the purpose, features, forms, and advantages of the technology disclosed in this specification will be further clarified by the detailed description and accompanying drawings shown below.
以下，參照隨附圖式來說明實施方式。以下實施方式中，出於技術說明之目的而示出詳細特徵等，但該等僅為例示，未必均係用以實現實施方式之必要特徵。Hereinafter, embodiments are described with reference to the accompanying drawings. In the following embodiments, detailed features and the like are shown for the purpose of technical description, but these are only examples and are not necessarily necessary features for realizing the embodiments.
再者，圖式係概略表示之圖，為了便於說明，圖式中適當地省略或簡化了構成。又，不同圖式中分別示出之構成等之大小及位置之相互關係未必準確地記載，可適當變更。又，即便於俯視圖而非剖視圖等圖式中，為了易於理解實施方式之內容，有時亦會標註影線。In addition, the drawings are schematic representations, and for convenience of explanation, the components are appropriately omitted or simplified in the drawings. In addition, the mutual relationship between the size and position of the components shown in different drawings may not be accurately described and may be appropriately changed. In addition, even in drawings such as plan views rather than cross-sectional views, hatching may be provided in order to facilitate understanding of the contents of the embodiments.
又，於以下所示之說明中，對相同構成要素標註相同符號來圖示，關於其等之名稱與功能亦同樣如此。因此，為了避免重複，有時省略該等構成要素之詳細說明。In addition, in the description shown below, the same components are denoted by the same symbols for illustration, and the same applies to their names and functions. Therefore, in order to avoid duplication, detailed descriptions of these components are sometimes omitted.
又，以下記載之說明中，當記載為諸如「具備」「包含」或「具有」某個構成要素時，只要未作特別說明，則非排除其他要素之存在之排他性表述。In addition, in the description below, when it is described as "having", "including" or "having" a certain constituent element, it does not exclude the existence of other elements as an exclusive statement unless otherwise specified.
又，於以下記載之說明中，雖然有時會使用「第1」或「第2」等序數，但該等術語係為了易於理解實施方式之內容而使用，其等之間並不一定具備可能由序數之使用而產生之順序等相關性。In addition, in the description described below, although ordinal numbers such as "first" or "second" are sometimes used, these terms are used for easy understanding of the contents of the embodiments, and they are not necessarily possible. Correlations such as order arising from the use of ordinal numbers.
又，以下記載之說明中，關於表示相對位置關係或絕對位置關係之表達，例如「一方向上」、「沿著一方向」、「平行」、「正交」、「中心」、「同心」或「同軸」等，只要未作特別說明，則包含以下兩種情形，即，嚴格地表示位置關係之情形；及於公差或者可獲得相同程度之功能之範圍內，角度或距離發生位移之情形。In addition, in the description below, expressions indicating relative positional relationships or absolute positional relationships, such as "in one direction", "along one direction", "parallel", "orthogonal", "center", "concentric" or "Coaxial", etc., unless otherwise specified, include the following two situations, that is, the situation where the positional relationship is strictly expressed; and the situation where the angle or distance is displaced within the tolerance or within the range where the same degree of function can be obtained.
又，以下記載之說明中，表示相等狀態之表達，例如「相同」、「相等」、「均勻」或「均質」等，只要未作特別說明，則包含以下兩種情形，即，嚴格地表示相等狀態之情形；及於公差或者可獲得相同程度之功能之範圍內產生差異之情形。In addition, in the description below, expressions indicating a state of equality, such as "the same", "equal", "uniform" or "homogeneous", etc., include the following two situations, that is, strictly speaking, unless otherwise specified. The situation of equal status; and the situation of difference arising within the tolerance or the scope of obtaining the same degree of function.
又，以下記載之說明中，雖然有時會使用「上」、「下」、「左」、「右」、「側」、「底」、「正」或「背」等表示特定位置或方向之術語，但該等術語係為了易於理解實施方式之內容而使用，與實際實施時之位置或方向無關。In addition, in the description below, although "upper", "lower", "left", "right", "side", "bottom", "front" or "back" are sometimes used to indicate a specific position or direction However, these terms are used for easy understanding of the contents of the embodiments and have nothing to do with the position or direction during actual implementation.
又，以下記載之說明中，當記載為「…之上表面」或「…之下表面」時，除了表示作為對象之構成要素之上表面本身或下表面本身之外，還包含在作為對象之構成要素之上表面或下表面形成有其他構成要素之狀態。即，例如，當記載為「設置於甲上表面之乙」時，並不妨礙甲與乙之間介置另一構成要素「丙」。In addition, in the description below, when it is described as "the upper surface of..." or "the lower surface of...", it means not only the upper surface itself or the lower surface itself of the constituent elements of the object, but also the upper surface itself or the lower surface itself of the object. A state in which other constituent elements are formed on the upper surface or lower surface of a constituent element. That is, for example, when it is described as "B placed on the upper surface of A", it does not prevent another component "C" from being interposed between A and B.
＜實施方式＞ 以下，說明本實施方式之基板處理裝置及基板處理方法。＜Embodiment＞ Hereinafter, the substrate processing apparatus and the substrate processing method of this embodiment will be described.
＜關於基板處理裝置之構成＞ 圖1係概略地表示本實施方式1之基板處理裝置1之構成例之俯視圖。如圖1所例示，基板處理裝置1包含載具載置部3、分度機械手IR、中央機械手CR、控制裝置9(控制器)及至少一個處理單元7(圖1中有4個處理單元)。複數個處理單元7用以處理基板W(晶圓)。＜About the structure of the substrate processing equipment＞ FIG. 1 is a plan view schematically showing a structural example of the substrate processing apparatus 1 according to the first embodiment. As illustrated in FIG. 1 , the substrate processing apparatus 1 includes a carrier placement part 3 , an indexing robot IR, a central robot CR, a control device 9 (controller), and at least one processing unit 7 (there are four processing units in FIG. 1 unit). The plurality of processing units 7 are used to process the substrate W (wafer).
基板處理裝置1係可用於基板處理之單片式裝置，例如為濕式蝕刻裝置。基板處理裝置1具有腔室80。藉由控制腔室80內之氣體氛圍，可於所期望之氣體氛圍中進行基板處理。控制裝置9可控制基板處理裝置1所具備之各部之動作。各個載具CA係收容基板W之收容器。載具載置部3係用以保持複數個載具CA之機構。分度機械手IR可於載具載置部3與基板載置部PS之間搬送基板W。中央機械手CR可將基板W從基板載置部PS及至少1個處理單元7中之任一個搬送至另一個。根據以上構成，分度機械手IR、基板載置部PS及中央機械手CR作為於各個處理單元7與載具載置部3之間搬送基板W之搬送機構發揮功能。The substrate processing device 1 is a single-chip device that can be used for substrate processing, such as a wet etching device. The substrate processing apparatus 1 has a chamber 80 . By controlling the gas atmosphere in the chamber 80, substrate processing can be performed in a desired gas atmosphere. The control device 9 can control the operation of each component included in the substrate processing apparatus 1 . Each carrier CA is a container for storing the substrate W. The carrier holding part 3 is a mechanism for holding a plurality of carriers CA. The indexing robot IR can transport the substrate W between the carrier mounting part 3 and the substrate mounting part PS. The central robot CR can transport the substrate W from one of the substrate placement part PS and at least one processing unit 7 to the other. According to the above configuration, the indexing robot IR, the substrate mounting part PS, and the central robot CR function as a transport mechanism that transports the substrate W between the respective processing units 7 and the carrier mounting part 3 .
未處理之基板W由分度機械手IR從載具CA中取出，經由基板載置部PS被傳送至中央機械手CR。中央機械手CR將該未處理之基板W搬入處理單元7。處理單元7對基板W進行處理。處理後之基板W由中央機械手CR從處理單元7中取出，視需要經過其他處理單元7後，經由基板載置部PS被傳送至分度機械手IR。分度機械手IR將處理後之基板W搬入載具CA。根據以上所述，對基板W進行處理。The unprocessed substrate W is taken out from the carrier CA by the indexing robot IR, and is transferred to the central robot CR via the substrate placement part PS. The central robot CR carries the unprocessed substrate W into the processing unit 7 . The processing unit 7 processes the substrate W. The processed substrate W is taken out from the processing unit 7 by the central robot CR, passes through other processing units 7 if necessary, and is transferred to the indexing robot IR via the substrate placement part PS. The indexing robot IR carries the processed substrate W into the carrier CA. According to the above, the substrate W is processed.
＜關於控制裝置＞ 圖2係概念性地表示基板處理裝置1之控制裝置9之構成例之圖。控制裝置9以可進行通信之方式與分度機械手IR、中央機械手CR及處理單元7連接。<About the control device> FIG. 2 is a diagram conceptually showing a structural example of the control device 9 of the substrate processing apparatus 1 . The control device 9 is connected to the indexing robot IR, the central robot CR and the processing unit 7 in a communicable manner.
控制裝置9具備控制部90，該控制部90控制分度機械手IR、中央機械手CR及處理單元7中之各動作部之動作。又，控制裝置9可具備檢測部91。檢測部91參照下文所述之記憶媒體中記憶之基板W之處理配方，檢測於處理單元7中進行之基板處理之設定值。又，檢測部91藉由基於下文所述之相機所拍攝之圖像進行圖像分析，來檢測於處理單元7中進行之基板處理之設定值。於此種情形時，控制部90可參照檢測部91中檢測出之設定值來控制處理單元7中之各個動作部之動作。The control device 9 includes a control unit 90 that controls the operations of each operation unit in the indexing robot IR, the central robot CR, and the processing unit 7 . Furthermore, the control device 9 may include a detection unit 91 . The detection unit 91 refers to the processing recipe of the substrate W stored in the storage medium described below, and detects the setting value of the substrate processing performed in the processing unit 7 . In addition, the detection unit 91 detects the setting value of the substrate processing performed in the processing unit 7 by performing image analysis based on the image captured by the camera described below. In this case, the control unit 90 can refer to the setting value detected by the detection unit 91 to control the operation of each action unit in the processing unit 7 .
控制裝置9係藉由執行各種處理之中央運算處理裝置(central processing unit，即CPU)、作為運算處理之作業區域之隨機存取記憶體(random access memory，即RAM)或固定磁碟等記憶媒體等來實現。記憶媒體預先記憶各種資訊。記憶媒體例如記憶與分度機械手IR、中央機械手CR及處理單元7之動作條件有關之資訊。與處理單元7之動作條件有關之資訊例如係用以處理基板W之處理配方(處理程式)。記憶媒體例如記憶用以識別各基板W之資訊。The control device 9 is a storage medium such as a central processing unit (CPU) that performs various processes, a random access memory (RAM) as a working area for computing processing, or a fixed disk. Wait for it to happen. Memory media memorizes various information in advance. The memory medium stores, for example, information related to the indexing robot IR, the central robot CR, and the operation conditions of the processing unit 7 . The information related to the operating conditions of the processing unit 7 is, for example, a processing recipe (processing program) for processing the substrate W. The memory medium stores information for identifying each substrate W, for example.
＜關於處理單元＞ 圖3係概略地表示本實施方式之基板處理裝置1中之處理單元7及其相關構成之例之側視圖。<About processing unit> FIG. 3 is a side view schematically showing an example of the processing unit 7 and related structures in the substrate processing apparatus 1 of this embodiment.
基板處理裝置1具備：旋轉夾盤10，其將1片基板W以大致水平之姿勢保持，且使基板W繞通過基板W之中央部之鉛直之旋轉軸線Z1旋轉；中央噴嘴20，其主要向基板W之中央部噴出處理液120；處理液供給源29，其向中央噴嘴20供給處理液120；閥25，其切換從處理液供給源29向中央噴嘴20之處理液120之供給及供給停止；噴嘴臂22，其於端部安裝有中央噴嘴20；周緣噴嘴50，其主要向基板W之周緣部(即，俯視時包圍基板W之中央部之，除基板W之中央部以外之部分)噴出處理液150；處理液供給源59，其向周緣噴嘴50供給處理液150；閥55，其切換從處理液供給源59向周緣噴嘴50之處理液150之供給及供給停止；噴嘴臂52，其於端部安裝有周緣噴嘴50；筒狀處理護罩12，其繞基板W之旋轉軸線Z1將旋轉夾盤10包圍；及相機70，其例如為CMOS(Complementary Metal Oxide Semiconductor，互補金屬氧化物半導體)相機或CCD(Charge Coupled Device，電荷耦合)相機等，主要從上方拍攝基板W之周緣部。The substrate processing apparatus 1 includes a rotating chuck 10 that holds one substrate W in a substantially horizontal position and rotates the substrate W around a vertical rotation axis Z1 passing through the center portion of the substrate W; and a central nozzle 20 that mainly rotates toward the center of the substrate W. The processing liquid 120 is ejected from the center of the substrate W; the processing liquid supply source 29 supplies the processing liquid 120 to the center nozzle 20; and the valve 25 switches the supply of the processing liquid 120 from the processing liquid supply source 29 to the center nozzle 20 and stops the supply. ; Nozzle arm 22, which is equipped with a central nozzle 20 at its end; peripheral nozzle 50, which is mainly directed toward the peripheral portion of the substrate W (that is, surrounding the central portion of the substrate W in a plan view, excluding the central portion of the substrate W) The processing liquid 150 is ejected; the processing liquid supply source 59 supplies the processing liquid 150 to the peripheral nozzle 50; the valve 55 switches the supply and supply stop of the processing liquid 150 from the processing liquid supply source 59 to the peripheral nozzle 50; the nozzle arm 52, It is equipped with a peripheral nozzle 50 at its end; a cylindrical processing shield 12 that surrounds the rotating chuck 10 around the rotation axis Z1 of the substrate W; and a camera 70, which is, for example, a CMOS (Complementary Metal Oxide Semiconductor, complementary metal oxide) A semiconductor camera or a CCD (Charge Coupled Device) camera mainly photographs the peripheral portion of the substrate W from above.
此處，圖3中，中央噴嘴20被示為朝與基板W之上表面正交之方向噴出處理液120，但中央噴嘴20之噴出方向不限於圖3所示之情形。又，所謂基板W之周緣部係指例如從基板W之外周起10 mm左右之範圍。Here, in FIG. 3 , the central nozzle 20 is shown as ejecting the processing liquid 120 in a direction orthogonal to the upper surface of the substrate W, but the ejection direction of the central nozzle 20 is not limited to that shown in FIG. 3 . In addition, the peripheral edge portion of the substrate W refers to a range of about 10 mm from the outer periphery of the substrate W, for example.
又，處理液120或處理液150例如可為含有硫酸、乙酸、硝酸、鹽酸、氫氟酸、氨水、純水(DIW)、過氧化氫水、有機酸(例如檸檬酸或草酸等)、有機鹼(例如氫氧化四甲基銨(TMAH)等)、表面活性劑、防腐蝕劑中之至少1種之液體。作為將其等混合而得之藥液之例，可例舉硫酸與過氧化氫水之混合溶液(SPM)、氨與過氧化氫水之混合液(SC1)、用純水稀釋氫氟酸(HF)而獲得之稀氫氟酸(DHF)等。In addition, the treatment liquid 120 or the treatment liquid 150 may contain, for example, sulfuric acid, acetic acid, nitric acid, hydrochloric acid, hydrofluoric acid, ammonia water, pure water (DIW), hydrogen peroxide water, organic acid (such as citric acid or oxalic acid, etc.), organic acid, etc. A liquid containing at least one of a base (such as tetramethylammonium hydroxide (TMAH), etc.), a surfactant, and an anti-corrosion agent. Examples of chemical solutions obtained by mixing these include a mixed solution of sulfuric acid and hydrogen peroxide water (SPM), a mixed solution of ammonia and hydrogen peroxide water (SC1), hydrofluoric acid diluted with pure water ( HF), dilute hydrofluoric acid (DHF), etc.
又，從處理液供給源29供給之處理液120與從處理液供給源59供給之處理液150可為相同種類之處理液，亦可為不同種類之處理液。In addition, the processing liquid 120 supplied from the processing liquid supply source 29 and the processing liquid 150 supplied from the processing liquid supply source 59 may be the same type of processing liquid, or they may be different types of processing liquids.
旋轉夾盤10具備：圓板狀之旋轉基座10A，其與大致水平姿勢之基板W之下表面對向；複數個夾盤銷10E，其等從旋轉基座10A之外周部夾持基板W；旋轉軸10C，其從旋轉基座10A之中央部向下方延伸；及旋轉馬達10D，其藉由使旋轉軸10C旋轉，而使保持於旋轉基座10A之基板W旋轉。複數個夾盤銷10E沿著圓形基板W之圓周上等間隔地配置。再者，可使用真空吸附基板W之下表面之吸附式夾盤來代替旋轉夾盤10。The rotary chuck 10 includes a disc-shaped rotary base 10A that faces the lower surface of the substrate W in a substantially horizontal position, and a plurality of chuck pins 10E that clamp the substrate W from the outer peripheral portion of the rotary base 10A. ; Rotating shaft 10C, which extends downward from the central portion of the rotating base 10A; and a rotating motor 10D, which rotates the substrate W held on the rotating base 10A by rotating the rotating shaft 10C. A plurality of chuck pins 10E are arranged at equal intervals along the circumference of the circular substrate W. Furthermore, an adsorption chuck that vacuum-adsorbs the lower surface of the substrate W can be used instead of the rotating chuck 10 .
噴嘴臂22具備臂部22A、軸體22B及致動器22C。致動器22C調整軸體22B繞軸之角度。臂部22A之一端部固定於軸體22B上，臂部22A之另一端部遠離軸體22B之軸而配置。又，於臂部22A之另一端部安裝有中央噴嘴20。藉由利用致動器22C調整軸體22B之角度，中央噴嘴20構成為可沿基板W之徑向擺動。再者，擺動所引起之中央噴嘴20之移動方向只要具有基板W之徑向之分量即可，無需嚴格地平行於基板W之徑向。The nozzle arm 22 includes an arm portion 22A, a shaft 22B, and an actuator 22C. The actuator 22C adjusts the angle of the shaft 22B around the axis. One end of the arm 22A is fixed to the shaft 22B, and the other end of the arm 22A is arranged away from the axis of the shaft 22B. Moreover, the center nozzle 20 is attached to the other end part of the arm part 22A. By adjusting the angle of the shaft 22B using the actuator 22C, the central nozzle 20 is configured to be swingable in the radial direction of the substrate W. Furthermore, the moving direction of the central nozzle 20 caused by the swing only needs to have a radial component of the substrate W, and does not need to be strictly parallel to the radial direction of the substrate W.
噴嘴臂52具備臂部52A及基部52B。臂部52A之一端部固定於基部52B，臂部52A之另一端部安裝有周緣噴嘴50。噴嘴臂52之配置位置可沿處理護罩12之圓周方向變更。再者，圖3中示出將周緣噴嘴50固定於噴嘴臂52所配置之位置上，但噴嘴臂52亦可與噴嘴臂22同樣，以可擺動之方式保持周緣噴嘴50。The nozzle arm 52 includes an arm portion 52A and a base portion 52B. One end of the arm 52A is fixed to the base 52B, and the peripheral nozzle 50 is mounted on the other end of the arm 52A. The arrangement position of the nozzle arm 52 can be changed along the circumferential direction of the processing shield 12 . Furthermore, FIG. 3 shows that the peripheral nozzle 50 is fixed at the position where the nozzle arm 52 is arranged. However, the nozzle arm 52 may also swingably hold the peripheral nozzle 50 like the nozzle arm 22 .
又，於上述例中，處理單元7中之噴嘴之數量設為2個，但亦可於基板W之中央部或周緣部進而設置用以噴出處理液之噴嘴。Furthermore, in the above example, the number of nozzles in the processing unit 7 is two, but further nozzles for ejecting the processing liquid may be provided at the central portion or the peripheral portion of the substrate W.
圖4係表示周緣噴嘴50與基板W之位置關係之例之側視圖。如圖4所例示，從周緣噴嘴50噴出之處理液之噴出方向X1相對於基板W之上表面以作為銳角之角度θ傾斜。FIG. 4 is a side view showing an example of the positional relationship between the peripheral nozzle 50 and the substrate W. As shown in FIG. As illustrated in FIG. 4 , the ejection direction X1 of the processing liquid ejected from the peripheral nozzle 50 is inclined at an acute angle θ with respect to the upper surface of the substrate W.
藉由以此種角度向基板W噴出處理液，例如與噴出方向X1為與基板W之上表面正交之方向之情形相比，可減少噴出之處理液於基板W之上表面上濺起之量。By ejecting the processing liquid toward the substrate W at such an angle, for example, compared with the case where the ejection direction X1 is a direction orthogonal to the upper surface of the substrate W, the splashing of the ejected processing liquid on the upper surface of the substrate W can be reduced. quantity.
圖5係表示中央噴嘴20及周緣噴嘴50於基板W之上表面之位置關係之例的俯視圖。如圖5所例示，中央噴嘴20可沿著圍繞軸體22B之路徑Y1擺動。另一方面，周緣噴嘴50可配置於基板W之圓周方向上之任意位置。FIG. 5 is a plan view showing an example of the positional relationship between the central nozzle 20 and the peripheral nozzle 50 on the upper surface of the substrate W. As shown in FIG. As illustrated in FIG. 5 , the central nozzle 20 can swing along a path Y1 surrounding the shaft 22B. On the other hand, the peripheral nozzle 50 can be arranged at any position in the circumferential direction of the substrate W.
此處，從周緣噴嘴50噴出之處理液之噴出方向X1較理想為，俯視時平行於被噴到處理液之位置上之基板W之旋轉方向(即，與該位置上之基板W之外周相切之方向)。當噴出方向X1為此種方向時，處理液順著基板W之旋轉方向噴出，因此可抑制處理液於基板W上濺起。又，當噴出方向X1為此種方向時，噴出之處理液難以沿基板W之徑向流動，因此，抑制了處理液從旋轉基座10A之外周部被夾持基板W之夾盤銷10E彈開而飛散。Here, the ejection direction X1 of the processing liquid ejected from the peripheral nozzle 50 is preferably parallel to the rotation direction of the substrate W at the position where the processing liquid is ejected (that is, parallel to the outer circumference of the substrate W at the position when viewed from above). cut direction). When the ejection direction X1 is such a direction, the processing liquid is ejected along the rotation direction of the substrate W, so that the processing liquid is prevented from splashing on the substrate W. In addition, when the discharge direction Open and fly away.
＜關於基板處理裝置之動作＞ 其次，參照圖6來說明基板處理裝置1之動作例。再者，圖6係表示基板處理裝置之動作中之處理單元之動作的流程圖。<About the operation of the substrate processing device> Next, an operation example of the substrate processing apparatus 1 will be described with reference to FIG. 6 . Furthermore, FIG. 6 is a flowchart showing the operation of the processing unit in the operation of the substrate processing apparatus.
分度機械手IR將基板W從載具載置部3上之載具CA搬送至基板載置部PS。中央機械手CR將基板W從基板載置部PS搬送至一個處理單元7。處理單元7對基板W進行處理。中央機械手CR將基板W從處理單元7搬送至基板載置部PS。分度機械手IR將基板W從基板載置部PS搬送至載具載置部3上之載具CA。The indexing robot IR transports the substrate W from the carrier CA on the carrier placement section 3 to the substrate placement section PS. The central robot CR transports the substrate W from the substrate placement part PS to one processing unit 7 . The processing unit 7 processes the substrate W. The central robot CR transports the substrate W from the processing unit 7 to the substrate placement part PS. The indexing robot IR transports the substrate W from the substrate placement part PS to the carrier CA on the carrier placement part 3 .
作為處理單元7中之基板處理，首先，向基板W之上表面供給藥液，進行規定之藥液處理(圖6中之步驟ST01)。然後，向基板W之上表面供給純水(DIW)等，進行沖洗處理(圖6中之步驟ST02)。進而，藉由使基板W高速旋轉來甩落純水，藉此使基板W乾燥(圖6中之步驟ST03)。As the substrate processing in the processing unit 7, first, a chemical solution is supplied to the upper surface of the substrate W, and a predetermined chemical solution treatment is performed (step ST01 in FIG. 6). Then, pure water (DIW) or the like is supplied to the upper surface of the substrate W to perform a rinse process (step ST02 in FIG. 6 ). Furthermore, the substrate W is dried by rotating the substrate W at high speed to throw off the pure water (step ST03 in FIG. 6 ).
關於上述基板處理中之藥液處理，從中央噴嘴20及周緣噴嘴50向被旋轉夾盤10保持且旋轉之基板W之上表面噴出規定之處理液。從中央噴嘴20及周緣噴嘴50噴出之處理液之種類、噴出量、濃度、溫度或噴出時機等，由控制裝置9中之控制部90根據記憶於記憶媒體中之處理配方來控制。Regarding the chemical liquid treatment in the above substrate processing, a predetermined processing liquid is sprayed from the central nozzle 20 and the peripheral nozzle 50 toward the upper surface of the substrate W held and rotated by the spin chuck 10 . The type, discharge volume, concentration, temperature or discharge timing of the processing liquid sprayed from the central nozzle 20 and the peripheral nozzle 50 are controlled by the control unit 90 of the control device 9 based on the processing recipe stored in the storage medium.
例如，於相同或不同時機從中央噴嘴20與周緣噴嘴50噴出相同種類之處理液(SPM等)。此時，藉由使從中央噴嘴20與周緣噴嘴50噴出之處理液之濃度或溫度不同，可使基板W之中央部與周緣部之蝕刻速率不同，因此，即便例如根據處理配方瞭解到，於前一工序(乾式蝕刻工序等)之前，基板W之中央部與周緣部之蝕刻速率產生不均之情形時，亦可於本工序中抵消該不均。For example, the same type of processing liquid (SPM, etc.) is ejected from the central nozzle 20 and the peripheral nozzle 50 at the same or different timings. At this time, by making the concentration or temperature of the processing liquid ejected from the central nozzle 20 and the peripheral nozzle 50 different, the etching rate of the central part and the peripheral part of the substrate W can be different. Therefore, even if it is known from the processing recipe, for example, If uneven etching rates occur between the central portion and the peripheral portion of the substrate W before the previous process (dry etching process, etc.), the unevenness can be offset in this process.
又，例如，於相同或不同之時機從中央噴嘴20與周緣噴嘴50噴出不同種類之處理液(SPM與純水之組合等)。如此一來，可使基板W之中央部與周緣部之蝕刻速率有較大差異，因此，即便例如根據處理配方瞭解到，於前一工序(乾式蝕刻工序等)之前，基板W之中央部與周緣部之蝕刻速率產生不均，亦可於本工序中抵消該不均。Furthermore, for example, different types of processing liquids (a combination of SPM and pure water, etc.) are sprayed from the central nozzle 20 and the peripheral nozzle 50 at the same or different timings. In this way, the etching rates of the central portion and the peripheral portion of the substrate W can be greatly different. Therefore, even if it is known from the processing recipe, before the previous process (dry etching process, etc.), the central portion and the peripheral portion of the substrate W The etching rate at the peripheral edge is uneven, and this unevenness can be offset in this process.
再者，進行基板處理時之中央噴嘴20可固定於基板W之中央部之上方，亦可藉由利用致動器22C調整軸體22B之角度而沿基板W之徑向擺動。Furthermore, when performing substrate processing, the central nozzle 20 can be fixed above the central part of the substrate W, or can be swung in the radial direction of the substrate W by adjusting the angle of the shaft 22B using the actuator 22C.
又，從周緣噴嘴50噴出處理液之時機較理想為，從中央噴嘴20噴出之處理液所形成之液膜延展至基板W之上表面之中央部之後。若為此種狀態，則基板W之上表面之中央部不易受到從周緣噴嘴50噴出之處理液之影響，因此可抑制由該處理液之作用所致之基板W之中央部的缺陷。In addition, the timing of ejecting the processing liquid from the peripheral nozzle 50 is preferably after the liquid film formed by the processing liquid ejected from the central nozzle 20 extends to the center of the upper surface of the substrate W. In this state, the central portion of the upper surface of the substrate W is less susceptible to the influence of the processing liquid ejected from the peripheral nozzle 50 , so defects in the central portion of the substrate W caused by the action of the processing liquid can be suppressed.
＜關於周緣噴嘴之處理液之噴出位置＞ 其次，以下對周緣噴嘴50之處理液之噴出位置進行說明。如上所述，周緣噴嘴50可配置於基板W之圓周方向上之任意位置，但當從中央噴嘴20噴出之處理液於基板W之上表面擴散時，周緣噴嘴50較理想為配置成，對由從中央噴嘴20噴出之處理液形成之液膜相對變薄之部位噴出來自周緣噴嘴50之處理液。＜About the discharge position of the treatment liquid from the peripheral nozzle＞ Next, the discharge position of the processing liquid from the peripheral nozzle 50 will be described below. As mentioned above, the peripheral nozzle 50 can be arranged at any position in the circumferential direction of the substrate W. However, when the processing liquid sprayed from the central nozzle 20 spreads on the upper surface of the substrate W, the peripheral nozzle 50 is preferably arranged so as to The processing liquid from the peripheral nozzles 50 is sprayed from the portion where the liquid film formed by the processing liquid sprayed from the central nozzle 20 becomes relatively thin.
圖7係表示中央噴嘴20及周緣噴嘴50於基板W之上表面之位置關係之例的俯視圖。FIG. 7 is a plan view showing an example of the positional relationship between the central nozzle 20 and the peripheral nozzle 50 on the upper surface of the substrate W. As shown in FIG.
於中央噴嘴20配置於圖7所示之位置之情形時，從中央噴嘴20噴出之處理液會朝基板W之旋轉方向R1之方向擴散而形成液膜。此時，從中央噴嘴20噴出之處理液因基板W旋轉所產生離心力而逐漸向基板W之周緣部流動，從基板W之外周流下，與此同時，基板W之上表面之液膜亦變薄。When the central nozzle 20 is arranged at the position shown in FIG. 7 , the processing liquid sprayed from the central nozzle 20 will spread in the direction of the rotation direction R1 of the substrate W to form a liquid film. At this time, the processing liquid sprayed from the central nozzle 20 gradually flows toward the peripheral edge of the substrate W due to the centrifugal force generated by the rotation of the substrate W, and flows down from the outer periphery of the substrate W. At the same time, the liquid film on the upper surface of the substrate W also becomes thinner. .
如此一來，周緣噴嘴50較理想為例如配置成朝如下位置噴出處理液，上述位置係指相較連結中央噴嘴20與基板W之中心位置CP之直線D1上之、相對於中心位置CP與中央噴嘴20為相反側之基板W的周緣部(即，從中央噴嘴20之位置沿旋轉方向R1前進半周之位置上之基板W的周緣部)，沿旋轉方向R1前進之位置。In this way, the peripheral nozzle 50 is preferably configured, for example, to eject the processing liquid toward a position on the straight line D1 connecting the central nozzle 20 and the center position CP of the substrate W relative to the center position CP and the center. The nozzle 20 is the peripheral edge portion of the substrate W on the opposite side (that is, the peripheral edge portion of the substrate W that is half a revolution forward from the position of the central nozzle 20 in the rotation direction R1) and is a position advanced in the rotation direction R1.
圖7中，周緣噴嘴50配置於如上所述之位置，故從周緣噴嘴50噴出之處理液會噴出至由中央噴嘴20噴出之處理液所形成之液膜相對變薄之部位。於此種情形時，從周緣噴嘴50噴出之處理液不易受到從中央噴嘴20噴出之處理液之干擾，故從周緣噴嘴50噴出之處理液到達基板W之上表面，容易作用於基板W之上表面。因此，從周緣噴嘴50噴出之處理液之處理作用提高，例如，即便於基板W之中央部與周緣部進行蝕刻速率差異較大之基板處理，亦會因從中央噴嘴20噴出之處理液與從周緣噴嘴50噴出之處理液之干擾得到抑制，而容易實現所期望之蝕刻速率。In FIG. 7 , the peripheral nozzle 50 is disposed as described above, so the processing liquid sprayed from the peripheral nozzle 50 is sprayed to a portion where the liquid film formed by the processing liquid sprayed from the central nozzle 20 is relatively thin. In this case, the processing liquid sprayed from the peripheral nozzle 50 is not easily disturbed by the processing liquid sprayed from the central nozzle 20 , so the processing liquid sprayed from the peripheral nozzle 50 reaches the upper surface of the substrate W and easily acts on the substrate W surface. Therefore, the processing effect of the processing liquid sprayed from the peripheral nozzle 50 is improved. For example, even if the substrate W is processed with a large etching rate difference between the central part and the peripheral part of the substrate W, the processing liquid sprayed from the central nozzle 20 will be different from the processing liquid sprayed from the central nozzle 20 . Interference of the processing liquid ejected from the peripheral nozzle 50 is suppressed, and the desired etching rate can be easily achieved.
圖8係表示中央噴嘴20及周緣噴嘴50於基板W之上表面之位置關係之例的俯視圖。FIG. 8 is a plan view showing an example of the positional relationship between the central nozzle 20 and the peripheral nozzle 50 on the upper surface of the substrate W. As shown in FIG.
於將中央噴嘴20配置於圖8所示之位置之情形時，從中央噴嘴20噴出之處理液於基板W之旋轉方向R1之方向上擴散而形成液膜。此時，從中央噴嘴20噴出之處理液因基板W旋轉所產生之離心力而逐漸向基板W之周緣部流動，從基板W之外周流下，與此同時，基板W之上表面之液膜亦不斷變薄。When the center nozzle 20 is arranged at the position shown in FIG. 8 , the processing liquid ejected from the center nozzle 20 spreads in the direction of the rotation direction R1 of the substrate W to form a liquid film. At this time, the processing liquid sprayed from the central nozzle 20 gradually flows toward the peripheral edge of the substrate W due to the centrifugal force generated by the rotation of the substrate W, and flows down from the outer periphery of the substrate W. At the same time, the liquid film on the upper surface of the substrate W also continues to flow. thinning.
如此一來，周緣噴嘴50較理想為例如配置成朝如下位置噴出處理液，上述位置係指相較連結中央噴嘴20與基板W之中心位置CP之直線D2上之、相對於中心位置CP與中央噴嘴20為相反側之基板W的周緣部(即，從中央噴嘴20之位置沿旋轉方向R1前進半周之位置上之基板W的周緣部)，沿旋轉方向R1前進之位置。In this way, the peripheral nozzle 50 is preferably configured, for example, to eject the processing liquid toward a position on the straight line D2 connecting the central nozzle 20 and the center position CP of the substrate W relative to the center position CP and the center. The nozzle 20 is the peripheral edge portion of the substrate W on the opposite side (that is, the peripheral edge portion of the substrate W that is half a revolution forward from the position of the central nozzle 20 in the rotation direction R1) and is a position advanced in the rotation direction R1.
＜關於周緣噴嘴之處理液之液膜寬度之控制＞ 圖9係表示從周緣噴嘴50噴出之處理液150之液膜寬度W1之例的俯視圖。再者，圖9中例示之處理液150之液膜寬度W1僅為包含液膜寬度W1相對於整個基板W之比率之例示。＜Control of the liquid film width of the treatment liquid in the peripheral nozzle＞ FIG. 9 is a plan view showing an example of the liquid film width W1 of the processing liquid 150 ejected from the peripheral nozzle 50 . Furthermore, the liquid film width W1 of the processing liquid 150 illustrated in FIG. 9 is only an example including the ratio of the liquid film width W1 to the entire substrate W.
如圖9所例示，從周緣噴嘴50噴出之處理液150於基板W之旋轉方向R1上擴散，同時亦朝基板W之徑向之內側與外側擴散。此處，將從周緣噴嘴50噴出之處理液150擴散而形成之液膜於基板W之徑向上之寬度設為液膜寬度W1。As shown in FIG. 9 , the processing liquid 150 sprayed from the peripheral nozzle 50 spreads in the rotation direction R1 of the substrate W and also spreads toward the inner and outer sides of the substrate W in the radial direction. Here, the width of the liquid film formed by spreading the processing liquid 150 ejected from the peripheral nozzle 50 in the radial direction of the substrate W is referred to as the liquid film width W1.
液膜寬度W1可藉由以下任一種方法或其等之組合來控制。再者，該控制係由控制裝置9進行。The liquid film width W1 can be controlled by any one of the following methods or a combination thereof. Furthermore, this control is performed by the control device 9 .
作為第1方法，首先，使用相機70(參照圖3)拍攝形成於基板W之上表面之上述液膜。然後，將利用相機70拍攝到之圖像之圖像資料輸入至控制裝置9中之檢測部91(參照圖2)。然後，檢測部91藉由對該圖像資料進行圖像分析，來檢測上述液膜寬度W1。As the first method, first, the liquid film formed on the upper surface of the substrate W is photographed using the camera 70 (see FIG. 3 ). Then, the image data of the image captured by the camera 70 is input to the detection unit 91 in the control device 9 (see FIG. 2 ). Then, the detection unit 91 detects the liquid film width W1 by performing image analysis on the image data.
其次，控制裝置9中之控制部90參照檢測部91所檢測出之液膜寬度W1，對基板W之轉速及從周緣噴嘴50噴出之處理液150之噴出量進行調整。Next, the control unit 90 in the control device 9 refers to the liquid film width W1 detected by the detection unit 91 to adjust the rotation speed of the substrate W and the ejection amount of the processing liquid 150 ejected from the peripheral nozzle 50 .
具體而言，要使液膜寬度W1變窄時，控制部90會提高基板W之轉速來增大基板W之離心力。另一方面，要使液膜寬度W1變寬時，控制部90會降低基板W之轉速來減小基板W之離心力。然後，於已提高基板W之轉速之情形時，視需要減少處理液150之噴出量，另一方面，於已降低基板W之轉速之情形時，視需要增加處理液150之噴出量。進而，於已減少處理液150之噴出量之情形時，可提高處理液150之濃度或溫度。同樣地，於已增加處理液150之噴出量之情形時，可降低處理液150之濃度或溫度。Specifically, when the liquid film width W1 is to be narrowed, the control unit 90 increases the rotation speed of the substrate W to increase the centrifugal force of the substrate W. On the other hand, when the liquid film width W1 is to be widened, the control unit 90 reduces the rotation speed of the substrate W to reduce the centrifugal force of the substrate W. Then, when the rotation speed of the substrate W is increased, the ejection amount of the processing liquid 150 is reduced as necessary. On the other hand, when the rotation speed of the substrate W is reduced, the ejection amount of the processing liquid 150 is increased as necessary. Furthermore, when the discharge amount of the processing liquid 150 has been reduced, the concentration or temperature of the processing liquid 150 can be increased. Similarly, when the ejection amount of the processing liquid 150 has been increased, the concentration or temperature of the processing liquid 150 can be reduced.
作為第2方法，首先，控制裝置9中之檢測部91從控制裝置9之記憶媒體等中參照用以處理基板W之處理配方。然後，根據本工序所對應之處理配方之蝕刻輪廓等，檢測理應由處理液150形成之液膜之寬度W1。As the second method, first, the detection unit 91 in the control device 9 refers to the processing recipe for processing the substrate W from the storage medium or the like of the control device 9 . Then, based on the etching profile of the processing recipe corresponding to this process, etc., the width W1 of the liquid film that should be formed by the processing liquid 150 is detected.
其次，控制裝置9中之控制部90一面參照檢測部91所檢測出之液膜寬度W1及下文所述之對應表格，一面對基板W之轉速及從周緣噴嘴50噴出之處理液150之噴出量進行調整。Next, the control unit 90 in the control device 9 refers to the liquid film width W1 detected by the detection unit 91 and the corresponding table described below, while facing the rotation speed of the substrate W and the ejection of the processing liquid 150 ejected from the peripheral nozzle 50 Adjust the amount.
此處，上述對應表格係表示由處理液150形成之液膜寬度W1與基板W之轉速及處理液150之噴出量之關係的表格，藉由實驗等預先製作。Here, the above-mentioned correspondence table is a table showing the relationship between the liquid film width W1 formed by the processing liquid 150, the rotation speed of the substrate W and the ejection amount of the processing liquid 150, and is prepared in advance through experiments and the like.
藉由控制從周緣噴嘴50噴出之處理液150之液膜寬度W1，可高精度地特定出由處理液150所決定之蝕刻速率之範圍，因此可實現所期望之蝕刻輪廓。By controlling the liquid film width W1 of the processing liquid 150 ejected from the peripheral nozzle 50, the etching rate range determined by the processing liquid 150 can be specified with high accuracy, so that a desired etching profile can be achieved.
＜關於藉由以上記載之實施方式產生之效果＞ 其次，示出藉由以上記載之實施方式產生之效果之例。再者，於以下說明中，基於以上記載之實施方式中例示之具體構成來記載該效果，但於產生相同效果之範圍內，可置換為本案說明書中例示之其他具體構成。<About the effects produced by the embodiments described above> Next, examples of effects produced by the above-described embodiments will be shown. In addition, in the following description, this effect is described based on the specific structure illustrated in the embodiment described above, but it can be replaced by other specific structure illustrated in this specification within the range which produces the same effect.
根據以上記載之實施方式，基板處理方法包括如下工序：使保持於基板保持部之基板W旋轉；使用中央噴嘴20向旋轉之基板W之中央部噴出第1處理液；及使用周緣噴嘴50向旋轉之基板W之周緣部噴出第2處理液。此處，基板保持部例如對應於旋轉夾盤10等。又，第1處理液例如對應於處理液120等。又，第2處理液例如對應於處理液150等。此處，周緣噴嘴50從相對於基板W之主表面傾斜角度θ之方向，順著基板W之旋轉方向噴出處理液150。又，周緣噴嘴50向如下位置之基板W之周緣部噴出處理液150，即，俯視時從連結基板W之中心位置CP與中央噴嘴20之直線D1，順著基板W之旋轉方向前進半周後之位置。According to the embodiment described above, the substrate processing method includes the following steps: rotating the substrate W held by the substrate holding portion; using the central nozzle 20 to spray the first processing liquid toward the center of the rotating substrate W; and using the peripheral nozzle 50 to spray the first processing liquid toward the rotating substrate W. The second processing liquid is ejected from the peripheral edge of the substrate W. Here, the substrate holding portion corresponds to the spin chuck 10 or the like, for example. In addition, the first processing liquid corresponds to the processing liquid 120 or the like, for example. In addition, the second processing liquid corresponds to the processing liquid 150 or the like, for example. Here, the peripheral nozzle 50 sprays the processing liquid 150 along the rotation direction of the substrate W from a direction inclined at an angle θ with respect to the main surface of the substrate W. In addition, the peripheral nozzle 50 sprays the processing liquid 150 toward the peripheral portion of the substrate W at the position that is half a revolution along the rotation direction of the substrate W from the straight line D1 connecting the center position CP of the substrate W and the center nozzle 20 in a plan view. Location.
根據此種構成，可提高蝕刻輪廓之自由度。具體而言，從周緣噴嘴50噴出之處理液150向從中央噴嘴20噴出之處理液120所形成之液膜相對變薄之部位噴出。因此，處理液150不易受到處理液120之干擾，故處理液150容易到達基板W之上表面，於基板W之上表面發揮作用。因此，處理液150之處理作用提高，容易實現所期望之蝕刻速率，例如於基板W之中央部與周緣部差異較大之蝕刻速率等。結果，例如用於使乾式蝕刻之蝕刻速率均勻化之聚焦環因該乾式蝕刻而發生形狀變化，即便如基板W之周緣部之蝕刻氣體濃度不均之蝕刻工序為前一工序之情形時，藉由於基板之中央部與周緣部進行蝕刻輪廓差異較大之蝕刻處理，可於抵消蝕刻不均之同時進行基板處理。According to this structure, the degree of freedom of etching contours can be improved. Specifically, the processing liquid 150 ejected from the peripheral nozzle 50 is ejected to a portion where the liquid film formed by the processing liquid 120 ejected from the center nozzle 20 is relatively thin. Therefore, the processing liquid 150 is not easily disturbed by the processing liquid 120, so the processing liquid 150 can easily reach the upper surface of the substrate W and act on the upper surface of the substrate W. Therefore, the processing effect of the processing liquid 150 is improved, and it is easy to achieve a desired etching rate, such as an etching rate that is significantly different between the central portion and the peripheral portion of the substrate W. As a result, for example, the shape of the focus ring used to equalize the etching rate of dry etching changes due to the dry etching. Even if the etching process in which the etching gas concentration is uneven in the peripheral portion of the substrate W is the previous process, by Since the central portion and the peripheral portion of the substrate are etched with greatly different etching profiles, the substrate can be processed while offsetting etching unevenness.
再者，於無特別限制之情形時，可變更各處理之執行順序。Furthermore, the execution order of each process may be changed unless otherwise specified.
又，即便對上述構成追加本案說明書中例示之其他構成時，即，適當追加未被提及作為上述構成之本案說明書中之其他構成時，亦可產生相同之效果。Furthermore, even if other components exemplified in the specification of this application are added to the above-mentioned components, that is, if other components in the specification of this application that are not mentioned as the above-mentioned components are appropriately added, the same effect will be produced.
又，根據以上記載之實施方式，基板處理方法包括如下工序：使保持於旋轉夾盤10之基板W旋轉；使用中央噴嘴20向旋轉之基板W之中央部噴出處理液120；使用周緣噴嘴50向旋轉之基板W之周緣部噴出處理液150；檢測處理液150之液膜於基板W之周緣部之徑向寬度，即液膜寬度W1；及基於檢測出之液膜寬度W1來控制旋轉之基板W之轉速及來自周緣噴嘴50之處理液150之噴出量。此處，周緣噴嘴50從相對於基板W之主表面傾斜角度θ之方向，順著基板W之旋轉方向噴出處理液150。Furthermore, according to the above-described embodiment, the substrate processing method includes the following steps: rotating the substrate W held on the spin chuck 10; using the central nozzle 20 to spray the processing liquid 120 to the center of the rotating substrate W; and using the peripheral nozzle 50 to spray the processing liquid 120 to the center of the rotating substrate W. The processing liquid 150 is ejected from the peripheral part of the rotating substrate W; the radial width of the liquid film of the processing liquid 150 on the peripheral part of the substrate W is detected, that is, the liquid film width W1; and the rotating substrate is controlled based on the detected liquid film width W1. The rotation speed of W and the ejection amount of the treatment liquid 150 from the peripheral nozzle 50. Here, the peripheral nozzle 50 sprays the processing liquid 150 along the rotation direction of the substrate W from a direction inclined at an angle θ with respect to the main surface of the substrate W.
根據此種構成，可提高蝕刻輪廓之自由度。具體而言，藉由控制從周緣噴嘴50噴出之處理液150之液膜寬度W1，可高精度地確定由處理液150所決定之蝕刻速率之範圍，因此可實現所期望之蝕刻輪廓。According to this structure, the degree of freedom of etching contours can be improved. Specifically, by controlling the liquid film width W1 of the processing liquid 150 ejected from the peripheral nozzle 50, the range of the etching rate determined by the processing liquid 150 can be determined with high accuracy, so that a desired etching profile can be achieved.
再者，於無特別限制之情形時，可變更各處理之執行順序。Furthermore, the execution order of each process may be changed unless otherwise specified.
又，即便對上述構成追加本案說明書中例示之其他構成時，即，適當追加未被提及作為上述構成之本案說明書中之其他構成時，亦可產生相同之效果。Furthermore, even if other components exemplified in the specification of this application are added to the above-mentioned components, that is, if other components in the specification of this application that are not mentioned as the above-mentioned components are appropriately added, the same effect will be produced.
又，根據以上記載之實施方式，於基板W之中央部形成處理液120之液膜之後，周緣噴嘴50噴出處理液150。根據此種構成，基板W之上表面之中央部不易受到從周緣噴嘴50噴出之處理液之影響，因此可抑制由處理液150之作用所致之基板W之中央部之缺陷。Furthermore, according to the above-described embodiment, after the liquid film of the processing liquid 120 is formed on the central portion of the substrate W, the peripheral nozzle 50 ejects the processing liquid 150 . According to this structure, the central portion of the upper surface of the substrate W is less susceptible to the influence of the processing liquid ejected from the peripheral nozzle 50 , so defects in the central portion of the substrate W caused by the action of the processing liquid 150 can be suppressed.
又，根據以上記載之實施方式，處理液120與處理液150係不同種類之處理液。根據此種構成，可使蝕刻速率於基板W之中央部與周緣部差異較大。Furthermore, according to the embodiment described above, the processing liquid 120 and the processing liquid 150 are different types of processing liquids. According to this structure, the etching rate can be greatly different between the central portion and the peripheral portion of the substrate W.
又，根據以上所記載之實施方式，中央噴嘴20可沿基板W之徑向擺動。根據此種構成，可使從中央噴嘴20噴出之處理液120快速且均勻地擴散。Furthermore, according to the embodiment described above, the center nozzle 20 can swing in the radial direction of the substrate W. According to this structure, the processing liquid 120 sprayed from the center nozzle 20 can be rapidly and evenly spread.
＜關於以上記載之實施方式之變化例＞ 於以上記載之實施方式中，為了抵消根據處理配方預測之蝕刻速率之不均，控制中央噴嘴20及周緣噴嘴50之處理液之噴出量、濃度或溫度等。於使用中央噴嘴20及周緣噴嘴50進行基板處理之前，可使用光學感測器等實際測量形成於基板W之上表面之膜之厚度或槽之深度等，並藉由參照該實際測量值來控制中央噴嘴20及周緣噴嘴50之處理液之噴出量、濃度或溫度等。<Modifications to the embodiments described above> In the embodiment described above, in order to offset the uneven etching rate predicted based on the processing recipe, the ejection amount, concentration, temperature, etc. of the processing liquid from the central nozzle 20 and the peripheral nozzle 50 are controlled. Before using the central nozzle 20 and the peripheral nozzle 50 to process the substrate, an optical sensor or the like can be used to actually measure the thickness of the film or the depth of the groove formed on the upper surface of the substrate W, and control by referring to the actual measured values. The discharge volume, concentration or temperature of the treatment liquid from the central nozzle 20 and the peripheral nozzle 50, etc.
於以上所記載之實施方式中，有記載各個構成要素之材質、材料、尺寸、形狀、相對配置關係或實施條件等之情形，但該等於所有形態中均僅為一例，並不限於本案說明書中記載之內容。In the embodiments described above, the materials, materials, dimensions, shapes, relative arrangement relationships, implementation conditions, etc. of each component may be described. However, these are only examples in all forms and are not limited to the description of this case. The content of the record.
因此，於本案說明書中所揭示之技術範圍內假設了無數未例示之變化例及等效物。例如包含改變至少一個構成要素之情形，添加至少一個構成要素之情形，或省略至少一個構成要素之情形。Therefore, numerous unillustrated variations and equivalents are assumed within the technical scope disclosed in the specification of this case. For example, it includes a case where at least one constituent element is changed, a case where at least one constituent element is added, or a case where at least one constituent element is omitted.
又，於以上所記載之實施方式中，未特別指定而記載有材料名稱等時，只要不產生矛盾，則該材料中亦能包含其他添加物，例如合金等。In addition, in the above-described embodiments, when the name of a material or the like is described without being particularly specified, other additives such as alloys may be included in the material as long as there is no contradiction.
1:基板處理裝置 3:載具載置部 7:處理單元 9:控制裝置 10:旋轉夾盤 10A:旋轉基座 10C:旋轉軸 10D:旋轉馬達 10E:夾盤銷 12:處理護罩 20:中央噴嘴 22:噴嘴臂 22A:臂部 22B:軸體 22C:致動器 25:閥 29:處理液供給源 50:周緣噴嘴 52:噴嘴臂 52A:臂部 52B:基部 55:閥 59:處理液供給源 70:相機 80:腔室 90:控制部 91:檢測部 120:處理液 150:處理液 CA:載具 CP:中心位置 CR:中央機械手 D1:直線 D2:直線 IR:分度機械手 PS:基板載置部 R1:旋轉方向 W:基板 W1:液膜寬度 X1:噴出方向 Y1:路徑 Z1:旋轉軸線 θ:主表面傾斜角度1:Substrate processing device 3: Vehicle mounting part 7: Processing unit 9:Control device 10: Rotating chuck 10A: Rotating base 10C:Rotation axis 10D: Rotary motor 10E:Chuck pin 12: Handle the shield 20:Central nozzle 22:Nozzle arm 22A:Arm 22B:Shaft body 22C: Actuator 25:Valve 29: Treatment fluid supply source 50: Peripheral nozzle 52:Nozzle arm 52A:Arm 52B:Base 55: valve 59: Treatment fluid supply source 70:Camera 80: Chamber 90:Control Department 91:Testing Department 120: Treatment fluid 150: Treatment fluid CA: vehicle CP: central location CR: central robot D1: straight line D2: straight line IR: Indexing manipulator PS:Substrate mounting part R1: rotation direction W: substrate W1: liquid film width X1: Spray direction Y1:path Z1: axis of rotation θ: Main surface tilt angle
圖1係概略地表示實施方式之基板處理裝置之構成例之俯視圖。 圖2係概念性地表示基板處理裝置之控制裝置之構成例之圖。 圖3係概略地表示實施方式之基板處理裝置中之處理單元及其相關構成之例的側視圖。 圖4係表示周緣噴嘴與基板之位置關係之例之側視圖。 圖5係表示中央噴嘴及周緣噴嘴於基板之上表面之位置關係之例的俯視圖。 圖6係表示基板處理裝置之動作中之處理單元之動作的流程圖。 圖7係表示中央噴嘴及周緣噴嘴於基板之上表面之位置關係之例的俯視圖。 圖8係表示中央噴嘴及周緣噴嘴於基板之上表面之位置關係之例的俯視圖。 圖9係表示從周緣噴嘴噴出之處理液之液膜寬度之例的俯視圖。FIG. 1 is a plan view schematically showing a structural example of the substrate processing apparatus according to the embodiment. FIG. 2 is a diagram conceptually showing a configuration example of a control device of the substrate processing apparatus. FIG. 3 is a side view schematically showing an example of a processing unit and related structures in the substrate processing apparatus according to the embodiment. FIG. 4 is a side view showing an example of the positional relationship between the peripheral nozzle and the substrate. 5 is a top view showing an example of the positional relationship between the central nozzle and the peripheral nozzle on the upper surface of the substrate. FIG. 6 is a flowchart showing the operation of the processing unit in the operation of the substrate processing apparatus. 7 is a plan view showing an example of the positional relationship between the central nozzle and the peripheral nozzle on the upper surface of the substrate. 8 is a plan view showing an example of the positional relationship between the central nozzle and the peripheral nozzle on the upper surface of the substrate. FIG. 9 is a plan view showing an example of the liquid film width of the processing liquid sprayed from the peripheral nozzle.
1:基板處理裝置 1:Substrate processing device
3:載具載置部 3: Vehicle mounting part
7:處理單元 7: Processing unit
9:控制裝置 9:Control device
80:腔室 80: Chamber
CA:載具 CA: vehicle
CR:中央機械手 CR: central robot
IR:分度機械手 IR: Indexing manipulator
PS:基板載置部 PS:Substrate mounting part
W:基板 W: substrate
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