JPH08195370A - Edge cleaning method - Google Patents
Edge cleaning methodInfo
- Publication number
- JPH08195370A JPH08195370A JP372595A JP372595A JPH08195370A JP H08195370 A JPH08195370 A JP H08195370A JP 372595 A JP372595 A JP 372595A JP 372595 A JP372595 A JP 372595A JP H08195370 A JPH08195370 A JP H08195370A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- coating film
- solvent
- edge
- rotated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、ウエハ表面の外周部塗
布膜を溶剤により取り除くエッジクリーン方法に関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an edge cleaning method for removing an outer peripheral coating film on a wafer surface with a solvent.
【0002】[0002]
【従来の技術】半導体の製造工程において、ウエハには
層間絶縁膜や平坦化のためにSOG(Spin-on-Glass )
膜が塗布される。SOG塗布は、ウエハをウエハチャッ
クにより吸着して回転させつつ、SiOX をアルコール
に溶解したソースと呼ばれる薬液を滴下する回転塗布処
理により行われる。ウエハは、表面端部が各工程で位置
決め部などと接触する場合、塗布膜(レジスト)の欠け
などにより発塵する。これを防止するため、ウエハ表面
の外周部塗布膜を溶剤により取り除くエッジクリーン
(エッジリンス)が必要となる。このエッジクリーン
は、通常塗布膜塗布時に行われる。従来のエッジクリー
ンでは、ウエハを一定回転させつつ、ウエハ外周部上方
に位置するノズルから有機溶剤を射出し、1ステップで
ウエハ外周部の塗布膜を取り除いていた。2. Description of the Related Art In a semiconductor manufacturing process, an SOG (Spin-on-Glass) layer is formed on a wafer for flattening an interlayer insulating film
The film is applied. The SOG coating is performed by a spin coating process of dropping a chemical solution called a source in which SiO X is dissolved in alcohol while the wafer is attracted and rotated by a wafer chuck. When the edge portion of the surface of the wafer comes into contact with the positioning portion or the like in each step, dust is generated due to the lack of the coating film (resist). In order to prevent this, an edge clean (edge rinse) for removing the outer peripheral coating film on the wafer surface with a solvent is required. This edge clean is usually performed when the coating film is applied. In the conventional edge clean, the organic solvent is injected from a nozzle located above the outer peripheral portion of the wafer while rotating the wafer at a constant speed, and the coating film on the outer peripheral portion of the wafer is removed in one step.
【0003】[0003]
【発明が解決しようとする課題】ところが、上述した従
来のエッジクリーン方法では、塗布膜材料と有機溶剤の
組合せ(例えば、有機系SOGとシクロヘキサノン)に
よっては、塗布膜除去後のウエハ外周部の端部形状が裾
を引いたり、或いは山状の盛り上がりとなり、適正に塗
布膜除去ができない場合があった。これらの不具合は、
エッジクリーンを低速回転のウエハにより1ステップで
行っていたため、溶剤射出初期の物理的押し込みによ
り、或いは溶剤の塗布膜中への取り込みによる膨潤によ
って引き起こされていた。このため、従来の1ステップ
で行うエッジクリーンでは、例えば有機系SOGとシク
ロヘキサノンなどの組み合わせの場合では、適正な垂直
端部形状を得ることができず、パーティクルの発生源と
なる問題があった。本発明は上記状況に鑑みてなされた
もので、ウエハ外周部の塗布膜を確実に垂直な端部形状
で除去できるエッジクリーン方法を提供し、発塵の防止
を図ることを目的とする。However, in the above-mentioned conventional edge cleaning method, depending on the combination of the coating film material and the organic solvent (for example, organic SOG and cyclohexanone), the edge of the wafer outer peripheral portion after the coating film is removed. In some cases, the coating film could not be properly removed because the shape of the part had a hem or a mountain-shaped bulge. These defects are:
Since edge cleaning was performed in one step with a low-speed rotating wafer, it was caused by physical indentation at the initial stage of solvent injection or swelling due to incorporation of the solvent into the coating film. Therefore, in the conventional edge clean performed in one step, for example, in the case of the combination of the organic SOG and cyclohexanone, it is not possible to obtain a proper vertical end shape, and there is a problem that it becomes a particle generation source. The present invention has been made in view of the above circumstances, and an object thereof is to provide an edge cleaning method capable of reliably removing a coating film on the outer peripheral portion of a wafer with a vertical end shape, and to prevent dust generation.
【0004】[0004]
【課題を解決するための手段】上記目的を達成するため
の本発明に係るエッジクリーン方法は、ウエハをウエハ
ステージに吸着して回転させるとともに、溶剤を射出
し、ウエハ外周部の塗布膜を一定幅だけ除去するエッジ
クリーン方法において、ウエハの回転速度と加速度とを
段階的に変化させることを特徴とするものである。そし
て、エッジクリーン方法は、ウエハを高速回転させると
ともに溶剤の射出を十分な時間で行う第1ステップと、
この第1ステップの回転より低速でウエハを回転させる
とともにこの第1ステップより短時間の溶剤射出を行う
第2ステップと、溶剤の射出を行わず第1ステップの回
転より高速でウエハを回転させる第3ステップとを含む
ことが好ましい。According to the edge cleaning method of the present invention for achieving the above object, a wafer is adsorbed on a wafer stage and rotated, and at the same time, a solvent is injected to keep a coating film on a peripheral portion of the wafer constant. In the edge cleaning method of removing only the width, the rotation speed and acceleration of the wafer are changed stepwise. Then, the edge cleaning method includes the first step of rotating the wafer at a high speed and injecting the solvent in a sufficient time,
A second step of rotating the wafer at a lower speed than the rotation of the first step and performing a solvent injection for a shorter time than the first step; and a second step of rotating the wafer at a higher speed than the rotation of the first step without injecting the solvent. It is preferable to include 3 steps.
【0005】[0005]
【作用】ウエハの回転速度と加速度とを段階的に変化さ
せることによって、溶剤と塗布膜の接触時間、塗布膜の
除去幅、残留溶剤排出の制御が可能となる。そして、第
1ステップでは、高速のウエハ回転と、溶剤射出が十分
長い時間で行われ、安定したウエハ回転運動及び溶剤と
塗布膜の十分長い接触時間により除去性が高められる。
第2ステップでは、低速のウエハ回転と、溶剤射出が短
時間で行われ、除去されるウエハ外周部の塗布膜の幅が
広がる。また、溶剤の塗布膜中への取り込みが抑制され
る。第3ステップでは、溶剤の射出が停止されるととも
に、高加速度でウエハが回転され、ウエハ上に残留して
いる溶剤がすばやくウエハ外部へ排出され、残留溶剤と
塗布膜の接触時間が短縮されて溶剤の塗布膜中への取り
込みがなくなる。By changing the wafer rotation speed and acceleration stepwise, it is possible to control the contact time between the solvent and the coating film, the width of removal of the coating film, and the discharge of the residual solvent. In the first step, high-speed wafer rotation and solvent injection are performed for a sufficiently long time, and the removability is enhanced by the stable wafer rotation movement and the sufficiently long contact time between the solvent and the coating film.
In the second step, low-speed wafer rotation and solvent injection are performed in a short time, and the width of the coating film on the peripheral portion of the removed wafer is widened. Further, the incorporation of the solvent into the coating film is suppressed. In the third step, the injection of the solvent is stopped, the wafer is rotated at high acceleration, the solvent remaining on the wafer is quickly discharged to the outside of the wafer, and the contact time between the residual solvent and the coating film is shortened. The solvent is not taken into the coating film.
【0006】[0006]
【実施例】以下、本発明に係るエッジクリーン方法の好
適な実施例を図面を参照して詳細に説明する。図1は本
発明のエッジクリーン方法に用いるエッジクリーナーの
概略図、図2は本発明のエッジクリーン方法に用いるエ
ッジクリーナーの側面図である。本実施例に使用される
ウエハステージ(ウエハチャック)1には水平に固設さ
れた円板状のチャック本体3が設けられ、チャック本体
3はステッピィングモータ5に連結された駆動支持軸7
により駆動される。チャック本体3の上面には吸引用の
溝が複数形成され、これらの溝は駆動支持軸7を貫通す
る吸引孔を介して図示しない吸引手段によって真空吸引
される。これにより、チャック本体3の上面は、ウエハ
Wを吸着する真空式吸着面として機能する。ウエハチャ
ック1の側部にはエッジクリーナーノズル9が配設さ
れ、エッジクリーナーノズル9はウエハWに有機溶剤
(エッジクリーナー液)を射出する。また、チャック本
体3の周囲には吸着されたウエハWを覆うコーターカッ
プ11が配設され、コーターカップ11は塗布材料など
の飛散防止やチャック本体3周囲の雰囲気を一定に保つ
働きを有する。なお、図中、12はウエハ回転方向を表
す。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Preferred embodiments of the edge cleaning method according to the present invention will be described in detail below with reference to the drawings. FIG. 1 is a schematic view of an edge cleaner used in the edge cleaning method of the present invention, and FIG. 2 is a side view of the edge cleaner used in the edge cleaning method of the present invention. A wafer stage (wafer chuck) 1 used in this embodiment is provided with a horizontally fixed disk-shaped chuck body 3, and the chuck body 3 is connected to a stepping motor 5 with a drive support shaft 7.
Driven by A plurality of suction grooves are formed on the upper surface of the chuck body 3, and these grooves are vacuum-sucked by suction means (not shown) through suction holes penetrating the drive support shaft 7. Thereby, the upper surface of the chuck body 3 functions as a vacuum suction surface for sucking the wafer W. An edge cleaner nozzle 9 is arranged on the side of the wafer chuck 1, and the edge cleaner nozzle 9 injects an organic solvent (edge cleaner liquid) onto the wafer W. A coater cup 11 that covers the attracted wafer W is disposed around the chuck body 3, and the coater cup 11 has a function of preventing the coating material from scattering and keeping the atmosphere around the chuck body 3 constant. In the figure, 12 represents the wafer rotation direction.
【0007】次に、エッジクリーンの動作手順を図3〜
図6により説明する。図3は本発明の実施例であるエッ
ジクリーンの第1ステップを示す上面図、図4は図3の
側面図、図5は本発明の実施例であるエッジクリーンの
第2ステップを示す上面図、図6は図5の側面図であ
る。エッジクリーンは、塗布材料滴下、及び均一化のた
めのウエハ回転動作の後、ステップ1〜ステップ3の動
作により行われる。その際の各ステップにおける条件設
定の一例を示すと下記のようになる。Next, the operation procedure of the edge clean is shown in FIG.
This will be described with reference to FIG. 3 is a top view showing a first step of edge clean which is an embodiment of the present invention, FIG. 4 is a side view of FIG. 3, and FIG. 5 is a top view showing a second step of edge clean which is an embodiment of the present invention. 6 is a side view of FIG. The edge clean is performed by the operations of step 1 to step 3 after the coating material is dropped and the wafer is rotated for uniformization. An example of the condition setting in each step in that case is as follows.
【0008】 ステップ1: 回転数 2000rpm 時間 2sec エッジクリーナー液射出あり ステップ2: 回転数 1700rpm 加速度 −3000rpm/sec 時間 0.3sec エッジクリーナー液射出あり ステップ3: 回転数 2700rpm 加速度 33000rpm/sec 時間 2sec エッジクリーナー液射出なしStep 1: Rotation speed 2000 rpm time 2 sec With edge cleaner liquid injection Step 2: Rotation speed 1700 rpm Acceleration -3000 rpm / sec time 0.3 sec Edge cleaner liquid injection With step 3: Rotation speed 2700 rpm Acceleration 33000 rpm / sec time 2 sec Edge cleaner No liquid injection
【0009】先ず、図3、図4に示す第1ステップで
は、高速のウエハ回転と、エッジクリーナー液13の射
出を十分長い時間行う。高速回転による安定したウエハ
回転運動、及びエッジクリーナー液13と塗布膜の十分
長い接触時間により除去性が高められる。これにより、
ウエハWの外周部の塗布膜Sの一定幅L1だけが、確実
に除去される。しかしながら、このステップでは同時
に、射出初期にミルククラウンと同じ原理で、塗布膜中
にエッジクリーナー液13を滴下することによって、物
理的にエッジクリーナー液13が塗布膜上層を押し込
み、図4に示す塗布膜端部での盛り上がり15が発生す
る。また、十分長い射出時間を設定することにより、エ
ッジクリーナー液13が塗布膜中へ取り込まれ、塗布膜
端部が膨潤し、更に盛り上がり15が付加する問題も発
生する。First, in the first step shown in FIGS. 3 and 4, high-speed wafer rotation and injection of the edge cleaner liquid 13 are performed for a sufficiently long time. The removability is enhanced by a stable wafer rotation motion due to high speed rotation and a sufficiently long contact time between the edge cleaner liquid 13 and the coating film. This allows
Only the constant width L1 of the coating film S on the outer peripheral portion of the wafer W is reliably removed. However, in this step, at the same time, the edge cleaner liquid 13 is physically pushed into the upper layer of the coating film by dropping the edge cleaner liquid 13 into the coating film on the same principle as the milk crown at the initial stage of injection, and the coating shown in FIG. A bulge 15 is generated at the edge of the film. Further, by setting a sufficiently long injection time, the edge cleaner liquid 13 is taken into the coating film, the end portion of the coating film swells, and a bulge 15 is added.
【0010】つづいて、第2ステップに入る。図5、図
6に示す第2ステップでは、低速のウエハ回転とエッジ
クリーナー液13の射出を短時間行う。これは、第1ス
テップで発生した塗布膜端部の盛り上がり15部分のみ
を除去するもので、ウエハWの回転数を落とすことによ
って、除去されるウエハ外周部の塗布膜Sの幅L2が広
がることを利用している。また、上述したエッジクリー
ナー液13の塗布膜中への取り込みにより発生する塗布
膜端部の盛り上がり15を抑制するために、このステッ
プは短時間で行う。これにより、塗布膜端部へのエッジ
クリーナー液13の膨潤がなくなり、新たな塗布膜Sの
盛り上がりが発生しない。Then, the second step is entered. In the second step shown in FIGS. 5 and 6, low speed wafer rotation and injection of the edge cleaner liquid 13 are performed for a short time. This is to remove only the raised portion 15 of the coating film end portion generated in the first step, and by lowering the rotation speed of the wafer W, the width L2 of the coating film S on the peripheral portion of the wafer to be removed is increased. Are using. Further, this step is performed in a short time in order to suppress the swelling 15 at the end portion of the coating film, which occurs due to the above-mentioned incorporation of the edge cleaner liquid 13 into the coating film. As a result, the edge cleaner liquid 13 does not swell to the end of the coating film, and new swelling of the coating film S does not occur.
【0011】最後の第3ステップでは、エッジクリーナ
ー液13の射出を停止させ、高加速度にてウエハWを回
転させる。高加速度でウエハWを回転させることによっ
て、ウエハW上に残留しているエッジクリーナー液13
をすばやくウエハ外部へ排出する。これによって残留エ
ッジクリーナー液13と塗布膜Sの接触時間を短縮し、
エッジクリーナー液13の塗布膜S中への取り込みを抑
制し、上述の膨潤による塗布膜端部の盛り上がりを未然
に防止する。以上により、エッジクリーンの動作を終了
する。In the final third step, the injection of the edge cleaner liquid 13 is stopped and the wafer W is rotated at high acceleration. The edge cleaner liquid 13 remaining on the wafer W is rotated by rotating the wafer W at high acceleration.
Is quickly discharged to the outside of the wafer. This shortens the contact time between the residual edge cleaner liquid 13 and the coating film S,
The edge cleaner liquid 13 is suppressed from being taken into the coating film S, and swelling of the end portion of the coating film due to the swelling is prevented. With the above, the operation of the edge clean is completed.
【0012】なお、本発明に係るエッジクリーン方法
は、上述の実施例に限定されるものではなく、各種の応
用があり得る。例えば、各ステップの回転数や加速度は
塗布膜Sを除去できるものであれば、任意に設定でき
る。また、本発明に係るエッジクリーン方法の手順は、
3つのステップである必要はなく、本発明の構成となる
各ステップ内容を含んでいれば、3ステップ以上となっ
ても勿論良い。The edge cleaning method according to the present invention is not limited to the above-mentioned embodiment, but may be applied in various ways. For example, the number of revolutions and acceleration in each step can be arbitrarily set as long as the coating film S can be removed. The procedure of the edge cleaning method according to the present invention is
The number of steps need not be three, and may be three or more as long as the content of each step constituting the configuration of the present invention is included.
【0013】[0013]
【発明の効果】以上詳細に説明したように、本発明に係
るエッジクリーン方法によれば、ウエハの回転速度と加
速度とを段階的に変化させることによって、溶剤と塗布
膜の接触時間、塗布膜の除去幅、残留溶剤排出の制御が
可能となるので、ウエハ外周部の塗布膜が確実に垂直な
端部形状で除去され、塗布膜の欠けなどによる発塵を防
止することができ、この結果、製品の歩留りを向上させ
ることができる。As described above in detail, according to the edge cleaning method of the present invention, the contact time between the solvent and the coating film and the coating film are changed by changing the rotation speed and the acceleration of the wafer stepwise. Since it is possible to control the removal width and the residual solvent discharge, the coating film on the outer peripheral portion of the wafer can be reliably removed with the vertical edge shape, and dust generation due to chipping of the coating film can be prevented. , The product yield can be improved.
【図1】本発明のエッジクリーン方法に用いるエッジク
リーナーの概略図である。FIG. 1 is a schematic view of an edge cleaner used in an edge cleaning method of the present invention.
【図2】本発明のエッジクリーン方法に用いるエッジク
リーナーの側面図である。FIG. 2 is a side view of an edge cleaner used in the edge cleaning method of the present invention.
【図3】本発明の実施例であるエッジクリーンの第1ス
テップを示す上面図である。FIG. 3 is a top view showing a first step of edge clean which is an embodiment of the present invention.
【図4】図3の側面図である。FIG. 4 is a side view of FIG. 3;
【図5】本発明の実施例であるエッジクリーンの第2ス
テップを示す上面図である。FIG. 5 is a top view showing a second step of edge cleaning according to the embodiment of the present invention.
【図6】図5の側面図である。FIG. 6 is a side view of FIG. 5;
【符号の説明】 1 ウエハチャック(ウエハステージ) 13 溶剤 L1 ステップ1での塗布膜除去幅 L2 ステップ2での塗布膜除去幅 S 塗布膜 W ウエハ[Explanation of reference numerals] 1 wafer chuck (wafer stage) 13 solvent L1 coating film removal width in step 1 L2 coating film removal width in step S S coating film W wafer
Claims (2)
させるとともに、溶剤を射出し、ウエハ外周部の塗布膜
を一定幅だけ除去するエッジクリーン方法において、 前記ウエハの回転速度と加速度とを段階的に変化させる
ことを特徴とするエッジクリーン方法。1. An edge cleaning method in which a wafer is attracted to a wafer stage and rotated, and a solvent is injected to remove a coating film on a peripheral portion of the wafer by a predetermined width, wherein a rotation speed and an acceleration of the wafer are stepwise. Edge cleaning method characterized by changing to.
させるとともに、溶剤を射出し、ウエハ外周部の塗布膜
を一定幅だけ除去するエッジクリーン方法において、 前記ウエハを高速回転させるとともに溶剤の射出を十分
な時間で行う第1ステップと、該第1ステップの回転よ
り低速で前記ウエハを回転させるとともに該第1ステッ
プより短時間の溶剤射出を行う第2ステップと、溶剤の
射出を行わず前記第1ステップの回転より高速で前記ウ
エハを回転させる第3ステップとを含むことを特徴とす
るエッジクリーン方法。2. An edge clean method in which a wafer is attracted to a wafer stage and rotated, and a solvent is injected to remove a coating film on a peripheral portion of the wafer by a predetermined width. In the edge clean method, the wafer is rotated at a high speed and the solvent is injected. A first step that is performed for a sufficient time, a second step that rotates the wafer at a lower speed than the rotation of the first step, and a solvent injection that is shorter than the first step, and a first step that does not perform solvent injection. And a third step of rotating the wafer at a higher speed than the rotation of one step.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP372595A JPH08195370A (en) | 1995-01-13 | 1995-01-13 | Edge cleaning method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP372595A JPH08195370A (en) | 1995-01-13 | 1995-01-13 | Edge cleaning method |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH08195370A true JPH08195370A (en) | 1996-07-30 |
Family
ID=11565268
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP372595A Pending JPH08195370A (en) | 1995-01-13 | 1995-01-13 | Edge cleaning method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH08195370A (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001135612A (en) * | 1999-07-09 | 2001-05-18 | Applied Materials Inc | Apparatus and method for etching substrate |
JP2007157928A (en) * | 2005-12-02 | 2007-06-21 | Shibaura Mechatronics Corp | Processing device and method |
JP2008183559A (en) * | 2008-04-10 | 2008-08-14 | Tokyo Electron Ltd | Method and apparatus for treating substrate |
US7670438B2 (en) * | 2007-10-03 | 2010-03-02 | United Microelectronics Corp. | Method of removing particles from wafer |
CN108364886A (en) * | 2017-01-26 | 2018-08-03 | 东京毅力科创株式会社 | Coated film removal device, coated film minimizing technology and storage medium |
KR20230062498A (en) * | 2020-03-06 | 2023-05-09 | 가부시키가이샤 스크린 홀딩스 | Substrate processing method |
-
1995
- 1995-01-13 JP JP372595A patent/JPH08195370A/en active Pending
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001135612A (en) * | 1999-07-09 | 2001-05-18 | Applied Materials Inc | Apparatus and method for etching substrate |
JP2007157928A (en) * | 2005-12-02 | 2007-06-21 | Shibaura Mechatronics Corp | Processing device and method |
JP4716367B2 (en) * | 2005-12-02 | 2011-07-06 | 芝浦メカトロニクス株式会社 | Processing apparatus and processing method |
US7670438B2 (en) * | 2007-10-03 | 2010-03-02 | United Microelectronics Corp. | Method of removing particles from wafer |
JP2008183559A (en) * | 2008-04-10 | 2008-08-14 | Tokyo Electron Ltd | Method and apparatus for treating substrate |
CN108364886A (en) * | 2017-01-26 | 2018-08-03 | 东京毅力科创株式会社 | Coated film removal device, coated film minimizing technology and storage medium |
KR20230062498A (en) * | 2020-03-06 | 2023-05-09 | 가부시키가이샤 스크린 홀딩스 | Substrate processing method |
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