TWI801691B - 疊層體之加工方法 - Google Patents
疊層體之加工方法 Download PDFInfo
- Publication number
- TWI801691B TWI801691B TW108141348A TW108141348A TWI801691B TW I801691 B TWI801691 B TW I801691B TW 108141348 A TW108141348 A TW 108141348A TW 108141348 A TW108141348 A TW 108141348A TW I801691 B TWI801691 B TW I801691B
- Authority
- TW
- Taiwan
- Prior art keywords
- water
- soluble resin
- division
- wafer
- laminate
- Prior art date
Links
- 238000003672 processing method Methods 0.000 title claims description 9
- 238000000034 method Methods 0.000 claims abstract description 109
- 238000005520 cutting process Methods 0.000 claims abstract description 105
- 229920005989 resin Polymers 0.000 claims abstract description 65
- 239000011347 resin Substances 0.000 claims abstract description 65
- 239000010410 layer Substances 0.000 claims abstract description 44
- 239000011521 glass Substances 0.000 claims abstract description 32
- 239000000758 substrate Substances 0.000 claims abstract description 32
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 14
- 239000012790 adhesive layer Substances 0.000 claims abstract description 13
- 238000005429 filling process Methods 0.000 claims abstract description 13
- 235000012431 wafers Nutrition 0.000 claims description 67
- 230000000149 penetrating effect Effects 0.000 claims description 4
- 238000004140 cleaning Methods 0.000 claims description 2
- 238000000926 separation method Methods 0.000 claims description 2
- 230000015556 catabolic process Effects 0.000 abstract description 5
- 238000006731 degradation reaction Methods 0.000 abstract description 5
- 238000005406 washing Methods 0.000 abstract description 5
- 230000015572 biosynthetic process Effects 0.000 description 9
- 238000012986 modification Methods 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 239000000428 dust Substances 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 239000004372 Polyvinyl alcohol Substances 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000003384 imaging method Methods 0.000 description 3
- 229920002451 polyvinyl alcohol Polymers 0.000 description 3
- 239000002390 adhesive tape Substances 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- DHKHKXVYLBGOIT-UHFFFAOYSA-N acetaldehyde Diethyl Acetal Natural products CCOC(C)OCC DHKHKXVYLBGOIT-UHFFFAOYSA-N 0.000 description 1
- 125000002777 acetyl group Chemical class [H]C([H])([H])C(*)=O 0.000 description 1
- 229920006223 adhesive resin Polymers 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000003331 infrared imaging Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229920000036 polyvinylpyrrolidone Polymers 0.000 description 1
- 239000001267 polyvinylpyrrolidone Substances 0.000 description 1
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000002407 reforming Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14687—Wafer level processing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14698—Post-treatment for the devices, e.g. annealing, impurity-gettering, shor-circuit elimination, recrystallisation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
- B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68309—Auxiliary support including alignment aids
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
- H01L2221/68386—Separation by peeling
- H01L2221/6839—Separation by peeling using peeling wedge or knife or bar
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Electromagnetism (AREA)
- Mechanical Engineering (AREA)
- Plasma & Fusion (AREA)
- Optics & Photonics (AREA)
- Dicing (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Battery Electrode And Active Subsutance (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
Abstract
提供將在晶圓之表面隔著透明的黏接層而配設有玻璃基板之疊層體分割成各個影像感測器晶片之時,不會產生品質下降的疊層體之加工方法。
一種疊層體之加工方法,包含:水溶性樹脂填充工程,其係在藉由分割工程而形成的分割溝填充水溶性樹脂;改質層除去工程,其係在水溶性樹脂固化之狀態下,將切削刀定位在被形成在晶圓之背面的分割溝而進行切削,除去改質層;及水溶性樹脂除去工程,其係使擴張膠帶擴張而成為擴張狀態,並且維持該擴張狀態從晶圓之背面供給洗淨水而除去被填充於切削溝及分割溝之水溶性樹脂。
Description
本發明係關於將在晶圓之表面隔著透明的黏接層而配設有玻璃基板之疊層體分割成各個影像感測器晶片的疊層體之加工方法。
在矽等之半導體基板之上面藉由交叉的複數分割預定線被區劃而形成複數CMOS、CCD等之影像感測器的晶圓,係藉由能旋轉地具備有切削刀之切割裝置,或是具備將雷射光線聚光於被加工物而施予加工的聚光器的雷射加工裝置,被分割成各個影像感測器晶片,被分割的影像感測器晶片被利用於數位攝影機、行動電話、顯微鏡等。
因影像感測器會由於異物、刮傷等而使攝像機能下降,故藉由在形成複數影像感測器之晶圓之上面配設玻璃等之透明體而構成疊層體,以保護影像感測器避免刮傷等。
例如,作為將上述疊層體分割成各個影像感測器晶片之手段,提案有以切割裝置進行分割之方法(參照專利文獻1)。再者,作為將該疊層體分割成各個影像感測器晶片之另外的手段,提案有在該疊層體之內部,定位並照射相對於疊層體具有穿透性之雷射光線之聚光點而形成改質層,對該疊層體施加外力以該改質層作為分割起點而分割成各個影像感測器晶片的方法(參照專利文獻2)。
[先前技術文獻]
[專利文獻]
[專利文獻1] 日本特開2010-103327號公報
[專利文獻2] 日本特開2010-108992號公報
[發明所欲解決之課題]
藉由上述專利文獻1記載之技術分割疊層體之情況,有在該晶圓側之影像感測器晶片之外周產生缺損而導致品質下降之問題,再者,在藉由上述專利文獻2記載之技術分割疊層體之情況,有粉塵從構成該疊層體之晶圓之改質層落下,而導致品質下降的問題。
依此,本發明之目的係提供將在晶圓之表面隔著透明的黏接層而配設有玻璃基板之疊層體分割成各個晶片之時,不會產生上述品質下降的疊層體之加工方法。
[用以解決課題之手段]
藉由本發明時,提供一種疊層體之加工方法,其係將複數影像感測器被交叉的複數分割預定線區劃而在表面被形成複數的晶圓之表面隔著透明的黏接層而配設有玻璃基板之疊層體分割成各個影像感測器晶片,該疊層體之加工方法之特徵在於,具備:切削溝形成工程,其係從疊層體之玻璃基板側定位切削刀而切削與分割預定線對應的區域而在該玻璃基板形成到達至黏接層的切削溝;分割起點形成工程,其係從晶圓之背面側將相對於該晶圓具有穿透性之波長之雷射光線之聚光點定位在與該晶圓之該分割預定線對應之區域之內部而照射該雷射光線,於在該晶圓之內部連續性地形成改質層,並且形成從該改質層到達至該黏接層之裂紋而形成分割起點;疊層體支持工程,其係至少於該切削溝形成工程之後,在具有收容該疊層體之大小之開口部的框架隔著擴張膠帶而支持該疊層體之玻璃基板側;分割工程,其係於實施該分割起點形成工程和該疊層體支持工程之後,藉由擴張該擴張膠帶而沿著該分割起點形成該疊層體的分割溝,而分割成各個影像感測器晶片;水溶性樹脂填充工程,其係在藉由該分割工程而形成的該分割溝填充水溶性樹脂;改質層除去工程,其係在該水溶性樹脂固化或半固化之狀態下,將切削刀定位在被形成在該晶圓之背面的該分割溝而進行切削,依此除去該改質層;及
水溶性樹脂除去工程,其係在維持該擴張膠帶之該擴張狀態之狀態下,從該晶圓之背面供給洗淨水而除去被填充於該切削溝及該分割溝之水溶性樹脂。
以於實施該分割工程之前,事先在該晶圓之背面覆蓋水溶性樹脂,藉由該分割工程將該疊層體分割成各個影像感測器晶片之時,將該水溶性樹脂從該晶圓之背面填充至該分割溝且實施該水溶性樹脂填充工程為佳。以在從該分割工程完成後至該水溶性樹脂除去工程開始為止之期間的任何時間,對位於該疊層體和該框架之間的擴張膠帶施加熱使其收縮而維持擴張狀態為佳。
[發明之效果]
當藉由本發明之疊層體之加工方法時,從改質層產生的塵埃與水溶性樹脂同時順暢地被排出至外部,並且不會在從疊層體被分割的影像感測器晶片(CMOS、CCD)之外周產生缺損,不會使影像感測器之品質下降。
以下,針對本發眀實施型態之疊層體之加工方法,參考附件圖面而予以詳細說明。
一面參照圖1,一面針對在本發明實施型態中成為被加工物之疊層體予以說明。如圖1所示般,首先,若準備複數影像感測器(CMOS)12被交叉之複數分割預定線14區劃,且在表面10a形成複數的晶圓10,和透明之玻璃基板18,即準備晶圓10及玻璃基板18時,則在晶圓10之表面10a滴下透明的黏接劑(樹脂黏結劑)B,黏貼玻璃基板18。如此一來,隔著由上述黏接劑B構成的黏接層B使晶圓10和玻璃基板18一體化而形成疊層體20(參照圖1之下層)。
(切削溝形成工程)
若如上述般形成疊層體20時,實施從疊層體20之玻璃基板18側形成切削溝之切削溝形成工程。以下,針對切削溝形成工程,一面參照圖2及圖3一面予以說明。
首先,將疊層體20以玻璃基板18側朝上方之方式載置於切割裝置30(僅表示一部分)所具備的保持台31之保持面31a。保持面31a藉由具有通氣性之多孔陶瓷形成,被連接於無圖示之吸引手段。若在保持台31載置疊層體20時,使該吸引手段作動而保持吸引。
如圖3所示般,切割裝置30具備有轉軸單元32。轉軸單元32具備被固定於轉軸33之前端部且在外周具有刀刃之切削刀34,和保護切削刀34之刀具蓋35。切削刀34係例如適合於玻璃基板18之切削的樹脂黏結劑磨石,被設定成直徑為50mm,厚度為30μm。切削刀34被構成能與轉軸33同時旋轉,例如以20000rpm之速度旋轉。在刀具蓋35,於與切削刀34鄰接之位置配設切削水供給手段36,朝向切削刀34所致的疊層體20之切削位置供給切削水。於藉由切削刀34實施切削之時,使用無圖示之對準手段,進行切削刀34,和成為被保持於保持台31之疊層體20之加工位置的對位(對準)。該對準手段至少具備無圖示之照明手段及攝像手段,被構成能從玻璃基板18側攝像、檢測從透明的玻璃基板18側被攝像的晶圓10之表面10a之分割預定線14。並且,切割裝置30係在對準手段具備疊層體20之表面高度檢測手段,於對準時,檢測該疊層體20之表面的高度。
若實施該對準手段所致的對準時,則將迫使與轉軸33同時高速旋轉之切削刀34,定位在與保持於保持台31之疊層體20之分割預定線14對應之區域的外周端,使切削刀34之下端位置,完全切削玻璃基板18,下降且切入到達至疊層體20之黏接層B的高度位置,使疊層體20相對於切削刀34在以箭號X表示之X軸方向(加工進給方向)移動。此時之加工進給速度被設定成例如50mm/秒。依此,如圖3所示般,切削與構成疊層體20之玻璃基板18之分割預定線14對應的區域而形成切削溝100。而且,一面藉由無圖示之移動手段,使吸引保持疊層體20之保持台31在X軸方向、與X軸方向正交之方向適當移動,一面對在疊層體20之第1方向的所有分割預定線14,藉由上述切削刀34形成切削溝100。若對應於在疊層體20之第1方向的所有分割預定線14而形成切削溝100時,則使保持台31旋轉90度,在與上述第1方向正交之第2方向,在對應於分割預定線14之區域與上述相同形成切削溝100。依此,如圖4(a)所示般,在與晶圓10之所有分割預定線14對應之區域形成切削溝100。該切削溝100從圖4(b)所示之疊層體20之一部分放大剖面圖可理解,係從疊層體20之玻璃基板18側切削與分割預定線對應之區域而到達至黏接層B的溝,並非完全分割疊層體20的溝。如上述般,切削溝形成工程完成。
(疊層體支持工程、分割起點形成工程)
若實施上述切削溝形成工程時,則實施疊層體支持工程及分割起點形成工程。以下,一面參照圖5、圖6一面針對疊層體支持工程和分割起點形成工程予以說明。
於實施疊層體支持工程之時,如圖5所示般,準備在具有收容疊層體20之大小的開口部的框架F,黏貼擴張膠帶T之外周部的支持構件。若準備該支持構件時,則將形成有切削溝100之疊層體20,以晶圓10朝向上方之方式,使玻璃基板18側黏貼且支持於擴張膠帶T之表面中央。擴張膠帶T具有伸縮性,藉由糊劑等被賦予黏接性,被配設在擴張膠帶T之疊層體20隔著擴張膠帶T被保持於環狀框架F(參照圖5之下層)。
如上述般,若實施疊層體支持工程時,則實施分割起點形成工程。在本實施形態中被實施的分割起點形成工程可以使用圖6(a)所示之雷射加工裝置40(僅表示一部分)而實施。針對藉由雷射加工裝置40被實施的分割起點形成工程以下說明。
如圖6(a)所示般,雷射加工裝置40具備雷射光線照射單元42。雷射光線照射單元42具備包含無圖示之雷射振盪器的光學系統,且具備將從該雷射振盪器被射出的雷射光線LB予以聚光而照射的聚光器42a。雷射光線照射單元42如圖6(b)所示般,將相對於晶圓10具有穿透性之波長的雷射光線LB之聚光點,定位在與晶圓10之分割預定線14對應之區域之內部並予以照射而實施連續性地形成改質層110a的雷射加工。於藉由雷射光線照射單元42實施分割起點形成工程之時,首先將被保持於框架F之疊層體20,保持在雷射加工裝置40所具備的無圖示之保持台。若在該保持台保持疊層體20時,則使用無圖示之對準手段,檢測晶圓10之背面10b之高度位置,並且進行藉由聚光器42a被照射之雷射光線LB之照射位置,和被形成在晶圓10之表面10a側之分割預定線14的對位(對準)。在該對準手段具備無圖示之紅外線照明手段及紅外線攝像手段,被構成能從晶圓10之背面10b側攝像、檢測表面10a之分割預定線14。
若實施該對準手段所致的對準時,將聚光器42a定位在與晶圓10之分割預定線14對應之區域,即應開始加工的晶圓10之外周端位置之上方,且將從聚光器42a被照射的雷射光線LB之聚光點定位在與晶圓10之分割預定線14對應之區域的內部。接著,使雷射光線照射單元42動作,並且藉由無圖示之移動手段使疊層體20相對於聚光器42a在以箭號X表示之X軸方向(加工進給方向)移動。依此,從圖6(b)所示之疊層體20之一部分放大剖面圖可理解,沿著晶圓10之特定內部分位置,即與分割預定線14對應之位置而連續性地形成改質層110a,並且形成從改質層110a到達至黏接層B之裂紋110b而形成成為分割之起點的分割起點110。另外,在圖6(b)中,X軸方向為與記載圖6(b)之紙張呈垂直的方向。
並且,一面藉由無圖示之移動手段,使保持疊層體20之保持台在X軸方向、及與X軸方向正交之Y軸方向適當移動,一面對應於在第1方向的所有分割預定線14,藉由上述雷射光線照射單元42形成分割起點110。若對應於在晶圓10之第1方向的所有分割預定線14而形成有分割起點110時,即使無圖示之保持台旋轉90度,在與該第1方向正交之第2方向,也對與晶圓10之分割預定線14對應之區域的內部實施與上述相同的雷射加工而形成分割起點110。依此,沿著與晶圓10的所有分割預定線14對應之區域而形成分割起點110。藉由上述,實施本實施型態之疊層體支持工程及分割起點形成工程。另外,在上述實施型態中,雖然於實施疊層體支持工程之後,實施分割起點形成工程,但是在本發明中,不一定限定於在分割起點形成工程之前實施疊層體支持工程,即使在實施分割起點形成工程之後,實施疊層體支持工程亦可。即是,疊層體支持工程若至少在上述切削溝形成工程之後,即實施後述分割工程之時的任何時序中被實施即可。
另外,在上述分割起點形成工程的雷射加工條件被設定成例如下述般。
波長 :1342nm
重複頻率:60kHz
平均輸出:1W
加工進給速度:600mm/秒
(分割工程)
如上述般,隔著擴張膠帶T藉由環狀之框架F支持疊層體20,沿著與構成疊層體20之晶圓10之分割預定線14對應之區域的內部而形成分割起點110時,使用圖7(a)所示之分割裝置50而對疊層體20施加外力,實施將被形成在疊層體20之晶圓10的影像感測器12分割成各個影像感測器晶片12’的分割工程。
圖7(a)所示之分割裝置50具備保持支持疊層體20之環狀框架F的框架保持手段52,和擴張被黏貼於被保持在框架保持手段52之框架F的擴張膠帶T的膠帶擴張手段56。框架保持手段52係由為了保持環狀框架F而被形成環狀之框架保持構件52a,和作為被配設在框架保持構件52a之外周的固定手段的複數夾具52b構成。框架保持構件52a之上面被形成平坦,載置框架F。而且,被載置於框架保持構件52a上之框架F藉由夾具52b被固定在框架保持構件52a上。如此被構成的框架保持手段52係以藉由膠帶擴張手段56能在上下方向進退之方式被支持。
在環狀框架保持構件52a之內側配設被固定在無圖示之基台的擴張滾筒58。該擴張滾筒58被設定成較框架F之內徑小,且較被支撐於安裝在框架F之擴張膠帶T的疊層體20之外徑大。在本實施型態之膠帶擴張手段56具備在擴張滾筒58之周圍配置複數,且為了使框架保持構件52a能在上下方向進退,上端與框架保持構件52a之下面連結的活塞桿56a,和使活塞桿56a在上下方向進退的汽缸56b。如此一來,由複數活塞桿56a和汽缸56b構成的膠帶擴張手段56如在圖7(a)以實線所示般,使框架保持構件52a之上面能選擇性地移動至成為與擴張滾筒58之上端略相同之高度的基準位置,和以二點鏈線所示般框架保持構件52a之上面從擴張滾筒之上端以特定量向下的擴張位置。
在本實施型態之分割裝置50被構成概略上述般,針對使用該分割裝置50實施的分割工程更具體性予以說明。
將如上述般隔著擴張膠帶T而支持疊層體20的框架F,載置在框架保持構件52a上,若藉由夾具52b固定時,則使構成膠帶擴張手段56之複數汽缸56b動作,而使框架保持構件52a下降。因此,因被固定在框架保持構件52a上之框架F也下降,故如在圖7(a)以二點鏈線所示般被安裝於框架F之擴張膠帶T,抵接於相對性上升的擴張滾筒58之上端緣而迫使擴張(以T’表示)。其結果,因拉伸力放射狀地作用於被黏貼於擴張膠帶T’之疊層體20,故疊層體20沿著順著分割預定線14而被形成的分割起點110完全破斷,形成分割溝120。如此一來,若形成分割溝120時,使膠帶擴張手段56動作,而返回至擴張滾筒58之上端位置,和框架保持構件52a之上面一致的基準位置。在此,擴張膠帶T藉由上述分割工程暫時被擴張,如圖7(b)所示般,可以將對疊層體20作用有拉伸力的狀態維持在某程度。因此,從圖7(c)所示之疊層體20之一部分放大剖面圖可理解,即使返回至擴張滾筒58之上端位置,和框架保持構件52a之上面一致的基準位置,亦可以維持分割溝120之間隙間隔。藉由上述,分割工程完成。另外,此時以加熱位於疊層體20之外周和框架F之內側開口之間的區域的擴張膠帶T為佳。如此一來,位於該區域之擴張膠帶T收縮,可以更確實地維持對疊層體20的擴張狀態,即使在下一個工程之後,亦可以良好地維持分割溝120之間隙間隔。
若藉由上述分割工程時,玻璃基板18事先藉由切削溝100被分割,藉由對該分割起點110施加外力,可以將疊層體20分割成各個影像感測器晶片12’。因此,因構成影像感測器晶片12’之晶圓10未藉由切削刀被分割,不會在外周產生缺損,不會有影像感測器晶片12’之品質下降的問題。
若實施上述分割工程時,則實施水溶性樹脂填充工程。一面參照圖8,一面針對水溶性樹脂填充工程之實施態樣予以說明。
如圖8(a)所示般,藉由擴張膠帶T被支持,將藉由分割工程形成分割溝120之疊層體20定位在水溶性樹脂供給手段60之下方。若將疊層體20定位在水溶性樹脂供給手段60之下方時,從水溶性樹脂供給手段60,滴下與時間經過一起固化的水溶性樹脂62(例如,聚乙烯醇
(PVA))。在疊層體20如上述般形成被維持特定間隙間隔的分割溝120,從圖8(b)所示之疊層體20之一部分放大剖面圖可理解,被滴下的水溶性樹脂62經由分割溝120,也被供給至被形成在玻璃基板18側的切削溝100,水溶性樹脂62被填充於切削溝100及分割溝120,並且構成疊層體20之晶圓10之背面10b被水溶性樹脂62覆蓋。另外,水溶性樹脂不限定於上述聚乙烯醇,若為藉由水等之溶劑溶解的眾知水溶性樹脂即可,例如聚乙烯醇縮醛(也包含乙酸乙烯酯共聚物)、聚乙烯吡咯烷酮等亦可。藉由上述,水溶性樹脂填充工程完成。
如上述般,若水溶性樹脂填充工程完成時,則實施改質層除去工程。以下,一面參照圖9,一面針對改質層除去工程之實施態樣予以說明。
結束上述水溶性樹脂填充工程,藉由經過特定時間,被填充於分割溝120之水溶性樹脂62半固化或固化。在該狀態,搬運至圖9所示之切割裝置70,載置且保持於切割裝置70所具備的無圖示之保持台。
如圖9所示般,切割裝置70具備有轉軸單元71。轉軸單元71具備被固定於轉軸72之前端部且在外周具有刀刃之切削刀73,和保護切削刀73之刀具蓋74。切削刀73係例如適合於CMOS晶圓之切削的電鑄磨石,被設定成直徑為50mm,厚度為40μm。切削刀73被構成能與轉軸72同時旋轉,例如以20000rpm之速度旋轉。在刀具蓋74,於與切削刀73鄰接之位置配設切削水供給手段75,朝向切削刀73所致的疊層體20之切削位置供給切削水。於藉由切削刀73實施切削之時,使用無圖示之對準手段,進行切削刀73,和疊層體20之加工位置,即是分割溝120的對位(對準)。該對準手段至少具備無圖示之照明手段及攝像手段,被構成能攝像、檢測從晶圓10之背面10b側被攝像的被形成在晶圓10的分割溝120。並且,切割裝置70係在對準手段具備檢測疊層體20之上面,即是晶圓10之背面10b之高度的高度檢測手段,於對準時檢測該疊層體20之表面的高度。
若實施該對準手段所致的對準時,則將迫使與轉軸72同時高速旋轉的切削刀73,定位在與構成疊層體20之晶圓10之分割溝120對應的外周端部,而將切削刀73之下端之高度位置,在上述分割起點形成工程中定位在成為較形成在晶圓10之內部的改質層110a之下端更下方特定量的高度之位置。而且,使疊層體20相對於切削刀73在以箭號X表示之X軸方向(加工進給方向)移動。此時之加工進給速度被設定成例如50mm/秒。依此,如圖9(a)所示般,在構成疊層體20之晶圓10之背面10b,沿著形成有分割溝120之區域,藉由切削除去形成有改質層110a之區域,而形成切削溝130。而且,一面藉由圖示之移動手段,使吸引保持疊層體20之保持台31在X軸方向、與X軸方向正交之Y軸方向適當移動,一面對在疊層體20之第1方向的所有分割溝120,藉由上述切削刀73形成切削溝130。若對在疊層體20之第1方向的所有分割溝120形成除去改質層110a之切削溝130時,即使疊層體20旋轉90度,在與上述第1方向正交之第2方向,也對與分割溝120對應之位置,與上述相同形成切削溝130。依此,沿著藉由上述分割工程而形成的所有分割溝120,形成切削溝130。從圖9(b)所示之疊層體20之一部分放大剖面圖可理解,藉由形成該切削溝130,除去藉由分割起點形成工程被形成在晶圓10之內部的改質層110a。如此改質層110a被除去之時,由於分割溝120被填充水溶性樹脂62,故從改質層110a產生的塵埃與水溶性樹脂62同時流暢地被排出外部。藉由上述,改質層除去工程完成。另外,藉由該改質層除去工程,雖然被填充於切削溝100及分割溝120之水溶性樹脂62藉由除去改質層110a之時被供給的切削水被某程度除去,但是在切削溝100內殘存特定量。
若上述改質層除去工程完成時,則實施水溶性樹脂除去工程。以下,一面參照圖10,一面針對水溶性樹脂除去工程之實施態樣予以說明。
若上述改質層除去工程完成時,則將藉由框架F被支持的疊層體20定位在水洗手段80之下方。如上述般,由於在該水溶性樹脂填充工程中,位於疊層體20和框架F之間的擴張膠帶T被施加熱,故藉由擴張膠帶T之收縮維持擴張狀態,維持著切削溝130之間隙。對該切削溝130表露出的晶圓10之背面10b,從水洗手段80供給被施加特定壓力的洗淨水W,從分割溝130對被形成在玻璃基板18側之切削溝100供給洗淨水W。依此,完全除去殘存在分割溝120及切削溝100之水溶性樹脂62。藉由上述,水溶性樹脂除去工程完成,在晶圓10之表面10a隔著透明的黏接層B而配設有玻璃基板18之疊層體20被分割成各個影像感測器晶片12’。
如上述般,若藉由本實施型態時,則使切削刀73切入分割溝120而將疊層體20分割成影像感測器晶片12’之時形成的改質層110a,與水溶性樹脂62同時除去。依此,不會有從改質層110a產生之粉塵附著於影像感測器晶片12’之周圍而使品質下降之情形。再者,雖然於除去改質層110a之時,使用切削刀73,但是藉由切削刀73除去改質層110a之時,晶圓10已藉由分割溝120被分割成各個影像感測器晶片12’,因在其分割溝120被填充水溶性樹脂62而其間隙被維持,故由於不會有構成影像感測器晶片12’之晶圓10之外周施加過度負載,所以也防止產生缺損等之情形。依此,解決如上述影像感測器晶片12’之品質下降般的課題。
若藉由本發明時,不限定於上述實施型態,提供各種變形例。在上述實施型態中,雖然於分割工程完成時,對位於疊層體20和框架F之間的擴張膠帶T施加熱使其收縮而維持擴張膠帶T之擴張狀態,但是本發明不限定於此。因分割工程完成之後立即的擴張膠帶T暫時維持藉由分割工程被擴張之狀態,故從分割工程不花時間實施水溶性樹脂填充工程之情況,即使不實施對擴張膠帶T之加熱,於改質除去工程完成之後,實施水溶性樹脂除去工程之前,對位於疊層體20和框架F之間的擴張膠帶T施加熱而使其收縮,維持擴張膠帶T之擴張狀態亦可。
再者,在上述實施型態中,雖然於實施分割工程之後,將形成有分割溝120之狀態之疊層體20定位在水溶性樹脂供給手段60之下方,對構成疊層體20之晶圓10之背面10b供給水溶性樹脂62,而在分割溝120、切削溝100填充水溶性樹脂62,但是本發明不限定於此,例如於實施分割工程之前,對晶圓10之背面10b上供給水溶性樹脂62,水溶性樹脂62之固化開始之前,實施分割工程。即使如此,水溶性樹脂62進入藉由分割工程形成的分割溝120,可以在切削溝100和分割溝120填充水溶性樹脂62。
並且,在上述實施型態中,雖然藉由切割裝置30實施在玻璃基板18形成切削溝100之切削溝形成工程,藉由另外的切割裝置70實施除去形成在晶圓10之內部的改質層110a的改質層除去工程,但是本發明不限定於此,即使僅藉由切割裝置30或切割裝置70中之任一方實施切削溝形成工程及改質層除去工程亦可。在此情況,若因應切削部位為玻璃基板18,或晶圓10,適當更換切削刀34和切削刀73即可。
10:晶圓
12:影像感測器
12’:影像感測器晶片
14:分割預定線
18:玻璃基板
20:疊層體
30、70:切割裝置
34、73:切削刀
40 雷射加工裝置
42:雷射光線照射單元
42a:聚光器
50:分割裝置
56:膠帶擴張手段
60:水溶性樹脂供給手段
62:水溶性樹脂
100、130:切削溝
110:分割起點
110a:改質層
110b:裂紋
120:分割溝
圖1為表示在本發明實施型態成為被加工物之疊層體之構成的斜視圖。
圖2為表示對切削裝置保持疊層體之態樣的斜視圖。
圖3為表示切削溝形成工程之實施態樣的斜視圖。
圖4(a)為藉由切削溝形成工程形成有切削溝之疊層體之斜視圖,(b)為形成有切削溝之疊層體之一部分放大剖面圖。
圖5為表示藉由疊層體支持工程,隔著擴張膠帶T將疊層體支持於框架F之態樣的斜視圖。
圖6(a)為表示分割起點形成工程之實施態樣的斜視圖,(b)為表示藉由分割起點形成工程,在構成疊層體之晶圓之內部形成有分割起點之狀態的一部分擴大剖面圖。
圖7(a)為表示分割工程之實施態樣之一部分剖面圖,(b)為藉由分割工成倍分割成各個影像感測器晶片的疊層體之斜視圖,(c)為被分割成各個影像感測器晶片之疊層體之一部分放大剖面圖。
圖8(a)為表示水溶性樹脂填充工程之實施態樣的斜視圖,(b)為填充有水溶性樹脂之疊層體之一部分放大剖面圖。
圖9(a)為表示改質層除去工程之實施態樣的斜視圖,(b)為改質層被除去後之疊層體之一部分放大剖面圖。
圖10為表示水溶性樹脂除去工程之實施態樣的斜視圖。
10:晶圓
10b:背面
12’:影像感測器晶片
18:玻璃基板
20:疊層體
62:水溶性樹脂
70:切割裝置
71:轉軸單元
72:轉軸
73:切削刀
74:刀具蓋
75:切削水供給手段
100、130:切削溝
120:分割溝
B:黏接劑
T:擴張膠帶
F:框架
Claims (3)
- 一種疊層體之加工方法,其係將複數影像感測器被交叉的複數分割預定線區劃而在表面被形成複數的晶圓之表面隔著透明的黏接層而配設有玻璃基板之疊層體分割成各個影像感測器晶片,該疊層體之加工方法之特徵在於,具備: 切削溝形成工程,其係從疊層體之玻璃基板側定位切削刀而切削與分割預定線對應的區域而在該玻璃基板形成到達至黏接層的切削溝; 分割起點形成工程,其係從晶圓之背面側將相對於該晶圓具有穿透性之波長之雷射光線之聚光點定位在與該晶圓之該分割預定線對應之區域之內部而照射該雷射光線,於在該晶圓之內部連續性地形成改質層,並且形成從該改質層到達至該黏接層之裂紋而形成分割起點; 疊層體支持工程,其係至少於該切削溝形成工程之後,在具有收容該疊層體之大小之開口部的框架隔著擴張膠帶而支持該疊層體之玻璃基板側; 分割工程,其係於實施該分割起點形成工程和該疊層體支持工程之後,藉由擴張該擴張膠帶而沿著該分割起點形成該疊層體的分割溝,而分割成各個影像感測器晶片; 水溶性樹脂填充工程,其係在藉由該分割工程而形成的該分割溝填充水溶性樹脂; 改質層除去工程,其係在該水溶性樹脂固化或半固化之狀態下,將切削刀定位在被形成在該晶圓之背面的該分割溝而進行切削,依此除去該改質層;及 水溶性樹脂除去工程,其係在維持該擴張膠帶之該擴張狀態之狀態下,從該晶圓之背面供給洗淨水而除去被填充於該切削溝及該分割溝之水溶性樹脂。
- 如請求項1記載之疊層體之加工方法,其中 以於實施該分割工程之前,事先在該晶圓之背面覆蓋水溶性樹脂,藉由該分割工程將該疊層體分割成各個影像感測器晶片之時,將該水溶性樹脂從該晶圓之背面填充至該分割溝且實施該水溶性樹脂填充工程。
- 如請求項1記載之疊層體之加工方法,其中 以在從該分割工程完成後至該水溶性樹脂除去工程開始為止之期間的任何時間,對位於該疊層體和該框架之間的擴張膠帶施加熱使其收縮而維持擴張狀態。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018-214793 | 2018-11-15 | ||
JP2018214793A JP7164411B2 (ja) | 2018-11-15 | 2018-11-15 | 積層体の加工方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW202020953A TW202020953A (zh) | 2020-06-01 |
TWI801691B true TWI801691B (zh) | 2023-05-11 |
Family
ID=70709107
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW108141348A TWI801691B (zh) | 2018-11-15 | 2019-11-14 | 疊層體之加工方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US11056361B2 (zh) |
JP (1) | JP7164411B2 (zh) |
KR (1) | KR20200056915A (zh) |
CN (1) | CN111192852B (zh) |
TW (1) | TWI801691B (zh) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7241580B2 (ja) * | 2019-03-26 | 2023-03-17 | 株式会社ディスコ | ウエーハの加工方法 |
JP2022030051A (ja) * | 2020-08-06 | 2022-02-18 | Towa株式会社 | 切断装置、及び、切断品の製造方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20120247658A1 (en) * | 2011-03-29 | 2012-10-04 | Yasuo Kawada | Glass body cutting method, package manufacturing method, package, piezoelectric vibrator, oscillator, electronic apparatus, and radio-controlled time piece |
US20160172312A1 (en) * | 2014-12-15 | 2016-06-16 | Disco Corporation | Wafer processing method |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1241253C (zh) * | 2002-06-24 | 2006-02-08 | 丰田合成株式会社 | 半导体元件的制造方法 |
JP4944642B2 (ja) * | 2007-03-09 | 2012-06-06 | 株式会社ディスコ | デバイスの製造方法 |
JP2010103327A (ja) | 2008-10-24 | 2010-05-06 | Disco Abrasive Syst Ltd | デバイスの製造方法 |
JP5231167B2 (ja) | 2008-10-28 | 2013-07-10 | 株式会社ディスコ | 貼り合わせウエーハの分割方法及び該分割方法により製造されるデバイス |
US9040389B2 (en) * | 2012-10-09 | 2015-05-26 | Infineon Technologies Ag | Singulation processes |
CN103358032A (zh) * | 2013-07-31 | 2013-10-23 | 江阴长电先进封装有限公司 | 一种cis产品的圆片级划片方法 |
JP2015207604A (ja) * | 2014-04-17 | 2015-11-19 | 株式会社ディスコ | ウェーハの加工方法 |
US10403669B2 (en) * | 2015-06-15 | 2019-09-03 | Sony Corporation | Semiconductor device and electronic device having a chip size package (CSP) stack |
JP6727948B2 (ja) * | 2015-07-24 | 2020-07-22 | ソニーセミコンダクタソリューションズ株式会社 | 撮像素子、製造方法 |
CN108352388B (zh) | 2015-11-05 | 2022-11-18 | 索尼半导体解决方案公司 | 半导体装置、半导体装置制造方法和电子设备 |
US10014262B2 (en) * | 2016-06-14 | 2018-07-03 | Nxp Usa, Inc. | Method of wafer dicing for backside metallization |
JP6808282B2 (ja) * | 2016-12-14 | 2021-01-06 | 株式会社ディスコ | インターポーザの製造方法 |
US10363629B2 (en) * | 2017-06-01 | 2019-07-30 | Applied Materials, Inc. | Mitigation of particle contamination for wafer dicing processes |
-
2018
- 2018-11-15 JP JP2018214793A patent/JP7164411B2/ja active Active
-
2019
- 2019-10-29 KR KR1020190135413A patent/KR20200056915A/ko active Search and Examination
- 2019-11-07 CN CN201911080421.9A patent/CN111192852B/zh active Active
- 2019-11-12 US US16/680,625 patent/US11056361B2/en active Active
- 2019-11-14 TW TW108141348A patent/TWI801691B/zh active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20120247658A1 (en) * | 2011-03-29 | 2012-10-04 | Yasuo Kawada | Glass body cutting method, package manufacturing method, package, piezoelectric vibrator, oscillator, electronic apparatus, and radio-controlled time piece |
US20160172312A1 (en) * | 2014-12-15 | 2016-06-16 | Disco Corporation | Wafer processing method |
Also Published As
Publication number | Publication date |
---|---|
JP2020087973A (ja) | 2020-06-04 |
CN111192852B (zh) | 2023-08-01 |
CN111192852A (zh) | 2020-05-22 |
JP7164411B2 (ja) | 2022-11-01 |
KR20200056915A (ko) | 2020-05-25 |
US20200161150A1 (en) | 2020-05-21 |
US11056361B2 (en) | 2021-07-06 |
TW202020953A (zh) | 2020-06-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US7915140B2 (en) | Fabrication method for device having die attach film on the back side thereof | |
US7888239B2 (en) | Semiconductor device manufacturing method | |
JP2016001677A (ja) | ウエーハの加工方法 | |
TWI801691B (zh) | 疊層體之加工方法 | |
US7960250B2 (en) | Method for manufacturing device | |
JP2017103406A (ja) | ウエーハの加工方法 | |
JP2023001571A (ja) | 加工方法 | |
JP2014183097A (ja) | ウエーハの加工方法 | |
TW201707069A (zh) | 單晶基板之加工方法 | |
JP7027234B2 (ja) | ウエーハの加工方法 | |
JP7164412B2 (ja) | 積層体の加工方法 | |
JP2009090429A (ja) | マイクロマシンデバイスの加工方法 | |
KR102561376B1 (ko) | 웨이퍼의 가공 방법 및 웨이퍼의 가공에 사용하는 보조구 | |
TWI625775B (zh) | Wafer processing method (3) | |
JP2018014450A (ja) | ウェーハの加工方法 | |
US20230030317A1 (en) | Wafer dividing method | |
TW201503253A (zh) | 晶圓之加工方法 | |
JP2023136467A (ja) | ウエーハの加工方法 | |
TW202306688A (zh) | 被加工物的加工方法 | |
TW202324529A (zh) | 晶圓之生成方法及晶圓生成裝置 | |
TW202232591A (zh) | Daf分割確認方法 | |
JP2022054894A (ja) | ウェーハの加工方法 | |
CN117894673A (zh) | 晶片的加工方法 |