TWI801498B - 加工裝置 - Google Patents
加工裝置 Download PDFInfo
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- TWI801498B TWI801498B TW108104693A TW108104693A TWI801498B TW I801498 B TWI801498 B TW I801498B TW 108104693 A TW108104693 A TW 108104693A TW 108104693 A TW108104693 A TW 108104693A TW I801498 B TWI801498 B TW I801498B
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- Prior art keywords
- processing
- waste liquid
- acid
- cutting
- workpiece
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Abstract
提供一種可減低將未符合排水基準的加工廢液 進行排水之虞的加工裝置。
本發明之加工裝置係具備有：保持被加工 物的保持手段、及將被保持在該保持手段的被加工物進行加工的加工手段，該加工裝置之特徵為：另外具備有：加工液供給手段，其係當將被保持在該保持手段的被加工物以該加工手段進行加工時，至少對被加工物供給含有氧化劑的加工液；加工廢液回收部，其係回收包含由該加工液供給手段被供給至被加工物的該加工液的加工廢液；排出路，其係由該加工廢液回收部，將該加工廢液排出至該加工裝置外；及處理槽，其係被配設在該排出路的途中且貯留在該加工廢液回收部被回收的加工廢液，且具有將該加工廢液所包含的加工液進行分解的廢液處理手段。
Description
本發明係關於將被加工物加工時一邊供給加工液一邊實施加工的切削裝置、研削裝置、切削刀具(bite)切削裝置等加工裝置。
若以切削刀切削具有金屬的被加工物，在切削刀會發生阻塞，並且在金屬部分會發生毛邊。因所發生的毛邊，形成在被加工物的元件的端子間會短路、或在被加工物處理中，毛邊落下在接合墊上等而會發生接合不良等問題發生。
為解決該問題，在日本特開2015-177089號公報中係提案出一種一邊供給含有有機酸與氧化劑的切削液一邊切削被加工物的方法。藉由該切削方法，藉由切削液所含有的有機酸，金屬被改質而延性受到抑制。結果，毛邊的發生受到抑制，因切削液含有氧化劑，因切削液而形成在金屬表面的膜質改變，金屬係失去延性而容易被去除，以促進加工性。
[專利文獻1]日本特開2015-177089號公報
但是，依切削裝置的使用地域的排水基準，並無法將含有切削液的切削廢液直接排水，而藉由使用微生物的生物處理，將切削廢液中的有機物進行分解之後再排水。
但是，若在切削液中含有氧化劑，因氧化劑，在生物處理中所使用的微生物會死滅，無法分解切削廢液中的有機物而有排出未符合排水基準的切削廢液之虞。如上所示之問題並非侷限於切削裝置，在使用加工液的研削裝置、切削刀具切削裝置等其他加工裝置亦會發生者。
本發明係鑑於如上所示之情形而完成者，其目的在提供可減低將未符合排水基準的加工廢液進行排水之虞的加工裝置。
藉由本發明，提供一種加工裝置，其係具備有：保持被加工物的保持手段、及將被保持在該保持手段的被加工物進行加工的加工手段，該加工裝置之特徵為：另外具備有：加工液供給手段，其係當將被保持在該保持
手段的被加工物以該加工手段進行加工時，至少對被加工物供給含有氧化劑的加工液；加工廢液回收部，其係回收包含由該加工液供給手段被供給至被加工物的該加工液的加工廢液；排出路，其係由該加工廢液回收部，將該加工廢液排出至該加工裝置外；及處理槽，其係被配設在該排出路的途中且貯留在該加工廢液回收部被回收的加工廢液，且具有將該加工廢液所包含的加工液進行分解的廢液處理手段。
較佳為氧化劑係過氧化氫，廢液處理手段係包含：對加工廢液照射紫外線的紫外線照射手段。
本發明之加工裝置係具備貯留在加工廢液回收部被回收的加工廢液，且具有將加工廢液所包含的加工液進行分解的廢液處理手段的處理槽，因此可減低將未符合排水基準的加工廢液進行排水之虞。
2:封裝體基板
4:金屬框體(引線框架)
5:外周剩餘區域
5a:非元件區域
6a、6b、6c:元件區域
8:分割預定線
10:元件晶片裝載部
12:電極
14:壓模樹脂層
20:切削裝置
22:基座
24:水蓋
24a:上板
24b:側板
26:平台基座
28:吸引口
30:蛇腹
32:支柱
34:導軌
36:Y軸移動區塊
38:滾珠螺桿
40:Y軸移動機構(分級進給機構)
42:導軌
44:Z軸移動區塊
46:滾珠螺桿
48:脈衝馬達
50:Z軸移動機構
52:切削單元
54:切削刀
56:切削液供給噴嘴
58:攝像單元
60:水箱
62:底板
63:開口部
64:內周壁
66:外周壁
68:導水管部
70:排液口
72:切削進給機構
74:滾珠螺桿
76:導軌
78:可動板
80:馬達
81:圓筒構件
82:排液管
84:廢液處理槽
86:LED
88:透明板
圖1(A)係封裝體基板的平面圖，圖1(B)係封裝體基板的背面圖，圖1(C)係封裝體基板的側面圖。
圖2係適於切削圖1所示之封裝體基板的切削裝置的斜視圖。
圖3係切削裝置的切削進給手段及水箱部分的斜視
圖。
圖4係具有廢液處理手段的處理槽的剖面圖。
以下參照圖示，詳加說明本發明之實施形態。若參照圖1(A)，顯示適於藉由本發明實施形態之切削裝置進行加工的封裝體基板2之一例的平面圖。圖1(B)係封裝體基板2的背面圖，圖1(C)係封裝體基板2的側面圖。
封裝體基板2係具有矩形狀的金屬框體(引線框架)4，在金屬框體4之藉由外周剩餘區域5及非元件區域5a所圍繞的區域，在圖示之例中係存在3個元件區域6a、6b、6c。
在各元件區域6a、6b、6c中，在藉由以彼此呈正交的方式作縱橫設置的分割預定線8所區劃的複數區域區劃形成有元件晶片裝載部10，沿著各個元件晶片裝載部10的4邊形成有複數電極12。
各電極12彼此係藉由被壓模在金屬框體4的壓模樹脂層14而予以絕緣。藉由切削以第1方向伸長的分割預定線8及以與第1方向呈正交的第2方向伸長的分割預定線8，在切削溝槽的兩側現出各元件晶片的電極12。
在元件區域6a、6b、6c的各元件晶片裝載部10的背面係裝載有未圖示的元件晶片，各元件晶片所配備的電極與電極12作接合導線連接。
接著，元件區域6a、6b、6c的各元件晶片係
以藉由樹脂予以密封的方式，在各元件區域6a、6b、6c的背面形成有壓模樹脂層14。
若參照圖2，顯示本發明實施形態之切削裝置20的斜視圖。圖2所示之切削裝置20係作業者將應切削的被加工物載置於保持手段上，或由保持手段搬出的手動類型的切削裝置。
22係切削裝置20的基座，在基座22係以可旋轉而且藉由未圖示的切削進給機構而可以X軸方向往返動作的方式配設有平台基座26。在平台基座26的概略中央部分係形成有連接於吸引源的吸引口28之開口。
在將封裝體基板2加工時，將日本特開2011-040542號公報所揭示之治具平台裝載於平台基座26，透過治具平台，吸引保持封裝體基板2。亦即，在本實施形態之切削裝置中，係以平台基座與治具平台構成保持手段。
在平台基座26的周圍係配設有水蓋24，在該水蓋24與圖3所示之水箱60的間連結有用以保護切削進給機構的軸的蛇腹30。
在基座22的後方係立設有門型形狀的支柱32。在支柱32係固定有以Y軸方向伸長的一對導軌34。在支柱32係可利用由滾珠螺桿38與未圖示的脈衝馬達所成之Y軸移動機構(分級進給機構)40，沿著導軌34以Y軸方向移動地裝載有Y軸移動區塊36。
在Y軸移動區塊36係固定有以Z軸方向伸長的一對導軌42。在Y軸移動區塊36上，利用由滾珠螺桿46
與脈衝馬達48所成之Z軸移動機構50，被導軌42導引而可朝Z軸方向移動地裝載有Z軸移動區塊44。
在Z軸移動區塊44係安裝有作為加工手段的切削單元52，在切削單元52的心軸殼體53中係可旋轉地收容有未圖示的心軸，在心軸的前端部係可安裝卸下地安裝有切削刀54。
在切削刀54的兩側係夾著切削刀54配設有作為加工液供給手段的一對切削液供給噴嘴56，在以保持手段所保持的封裝體基板2的切削中，係一邊由切削液供給噴嘴56供給切削液，一邊以切削刀54切削封裝體基板2。
在Z軸移動區塊44係另外安裝有具有顯微鏡及攝影機的攝像單元58。攝像單元58係具備有對被加工物以可見光線進行攝像的攝像攝影機。
若一邊由切削水供給噴嘴56供給包含有機酸與氧化劑的切削液，一邊以切削刀54切削被吸引保持在吸盤平台26的封裝體基板2時，切削液及包含切削屑的切削廢液係由蛇腹30的短邊方向(Y軸方向)的兩端朝向圖3所示之水箱60流下。
水箱60係配設在平台基座26的移動路徑下，且為了可使平台基座26以X軸方向往返移動，在箱狀構件的底板62的中央部設有矩形狀的開口部63，該水箱60係包含有：藉由底板62、內周壁64及外周壁66所構成且接擋切削液之作為加工廢液回收部的導水管部68；及形成在底板62的排液口70。在排液口70係連接有朝水箱60的外部延伸
之作為排出路的排液管82的一端。
水蓋24係從形成為平面狀的上板24a的兩端部垂下一對側板24b而構成，上板24a的端部及2個側板24b係可滑動地與構成水箱60的內周壁64相扣合。
切削進給機構72係由：以X軸方向伸長的滾珠螺桿74；與滾珠螺桿74呈平行配設的一對導軌76；連結在滾珠螺桿74之一端的馬達80；及被收容在內部的螺帽螺合於滾珠螺桿74，且底部滑接於導軌76的可動板78所構成。
形成為若滾珠螺桿74藉由馬達80而旋轉時，可動板78被一對導軌76導引而以X軸方向往返移動的構成。在可動板78上係安裝有圓筒構件81，在該圓筒構件81的內部係收容有將平台基座26旋轉的旋轉機構。
如圖2及圖4所示，在連接於水箱60之排液口70的排液管(排液路)82的途中，配設有處理槽84，其係貯留在作為加工廢液回收部的導水管部68被回收的加工廢液且具有將該加工廢液所包含的加工液進行分解的廢液處理手段。
在本實施形態中，廢液處理手段係由配設在處理槽84的底壁及側壁的複數LED86所構成。由LED86被照射的紫外光(UV光)的波長係以340nm以下為佳，更佳為300nm以下。
以被貯留在處理槽84內的加工廢液不接觸LED86的方式，藉由透明板88覆蓋LED86。對被貯留在處
理槽84內的加工廢液，由LED86照射紫外線，加工廢液(切削廢液)中所包含的加工液(切削液)即被分解。
當以本發明實施形態之切削裝置2切削圖1所示之封裝體基板2時，一邊將包含有機酸與氧化劑的切削液供給至切削刀54切入封裝體基板2的加工點，一邊完成切削。
藉由切削液中所包含的有機酸，可一邊將封裝體基板2所包含的金屬改質而抑制延性一邊切削封裝體基板2。因此，並不會有因該切削而由金屬發生毛邊的情形。此外，藉由使用氧化劑，可將金屬的表面氧化而降低金屬的延性，使金屬表面的加工性提升。
以有機酸而言，可使用例如在分子內具有至少1個羧基與至少1個胺基的化合物。此時，胺基之中至少1個係以2級或3級胺基為佳。此外，作為有機酸來使用的化合物亦可具有取代基。
以可作為有機酸來使用的胺基酸而言，係列舉：甘胺酸、二羥基乙基甘胺酸、甘胺醯基甘胺酸、羥基乙基甘胺酸、N-甲基甘胺酸、β-丙胺酸、L-丙胺酸、L-2-胺基丁酸、L-正纈胺酸、L-纈胺酸、L-白胺酸、L-正白胺酸、L-別-異白胺酸、L-異白胺酸、L-苯基丙胺酸、L-脯胺酸、肌胺酸、L-鳥胺酸、L-離胺酸、牛磺酸、L-絲胺酸、L-蘇胺酸、L-別-蘇胺酸、L-高絲胺酸、L-甲狀腺素、L-酪胺酸、3,5-二碘-L-酪胺酸、β-(3,4-二羥基苯基)-L-丙胺酸、4-羥基-L-脯胺酸、L-半胱胺酸、L-甲硫胺酸、L-乙硫
胺酸、L-羊毛硫胺酸、L-胱硫醚、L-胱胺酸、L-氧化半胱胺酸、L-麩胺酸、L-天冬胺酸、S-(羧基甲基)-L-半胱胺酸、4-胺基丁酸、L-天冬醯胺、L-麩醯胺、吖絲胺酸、L-刀豆胺酸、L-瓜胺酸、L-精胺酸、δ-羥基-L-離胺酸、肌酸、L-犬尿胺酸、L-組胺酸、1-甲基-L-組胺酸、3-甲基-L-組胺酸、L-色胺酸、放線菌黴素C1、麥角硫醇、蜂毒明肽、第一型血管收縮素、第二型血管收縮素、及止痛素(antipain)等。其中，亦以甘胺酸、L-丙胺酸、L-脯胺酸、L-組胺酸、L-離胺酸、二羥基乙基甘胺酸為佳。
此外，以可作為有機酸來使用的胺基多酸而言，係列舉：亞胺基二乙酸、腈基三乙酸、二乙烯三胺五乙酸、乙二胺四乙酸、羥基乙基亞胺基二乙酸、腈基三亞甲基膦酸、乙二胺-N,N,N’,N’-四亞甲基磺酸、1,2-二胺基丙烷四乙酸、二醇醚二胺四乙酸、反環己烷二胺四乙酸、乙二胺-鄰-羥基苯基乙酸、乙二胺二琥珀酸(SS異構物)、β-丙胺酸二乙酸、N-(2-羧酸酯乙基)-L-天冬胺酸、N,N’-二(2-羥基苯甲基)乙二胺-N,N’-二乙酸等。
此外，以可作為有機酸來使用的羧酸而言，係列舉：甲酸、乙醇酸、丙酸、乙酸、丁酸、異戊酸、己烷酸、草酸、丙二酸、戊二酸、己二酸、蘋果酸、琥珀酸、庚二酸、巰基乙酸、乙醛酸、氯化乙酸、丙酮酸、乙醯基乙酸、戊二酸等飽和羧酸；或丙烯酸、甲基丙烯酸、丁烯酸、反丁烯二酸、順丁烯二酸、中康酸、檸康酸、烏頭酸等不飽和羧酸；苯甲酸類、甲基苯甲酸、苯二甲酸
類、萘甲酸類、均苯四甲酸、萘二甲酸等環不飽和羧酸等。
以氧化劑而言，可使用例如：過氧化氫、過氧化物、硝酸鹽、碘酸鹽、過碘酸鹽、次亞氯酸鹽、亞氯酸鹽、氯酸鹽、過氯酸鹽、過硫酸鹽、重鉻酸鹽、過錳酸鹽、鈰酸鹽、釩酸鹽、臭氧水及銀(二價)鹽、鐵(三價)鹽；及其有機錯合物鹽等。
此外，在切削液亦可混合防蝕劑。藉由混合防蝕劑，可防止QFN基板10所含有的金屬腐蝕(熔析)。以防蝕劑而言，以使用例如分子內具有3個以上氮原子而且具有縮合環構造的雜芳環化合物、或分子內具有4個以上氮原子的雜芳環化合物為佳。此外，芳環化合物係以含有：羧基、磺酸基、羥基、烷氧基為佳。具體而言，較佳為四唑衍生物、1,2,3-***衍生物、及1,2,4-***衍生物。
以可作為防蝕劑來使用的四唑衍生物而言，係列舉：在形成四唑環的氮原子上不具取代基，而且在四唑的5位導入以選自由：磺酸基、胺基、胺甲醯基、羧酸醯胺基、胺磺醯基、及磺醯胺基所成群組的取代基，或選自由：羥基、羧基、磺酸基、胺基、胺甲醯基、羧酸醯胺基、胺磺醯基、及磺醯胺基所成群組的至少1個取代基所取代的烷基者。
此外，以可作為防蝕劑來使用的1,2,3-***衍生物而言，係列舉：在形成1,2,3-***環的氮原子上不具取代基，而且在1,2,3-***的4位及/或5位導入以選自
由：羥基、羧基、磺酸基、胺基、胺甲醯基、羧酸醯胺基、胺磺醯基、及磺醯胺基所成群組的取代基，或選自由：羥基、羧基、磺酸基、胺基、胺甲醯基、羧酸醯胺基、胺磺醯基、及磺醯胺基所成群組的至少1個取代基所取代的烷基或芳基者。
此外，以可作為防蝕劑來使用的1,2,4-***衍生物而言，係列舉：在形成1,2,4-***環的氮原子上不具取代基，而且在1,2,4-***的2位及/或5位導入以選自由：磺酸基、胺甲醯基、羧酸醯胺基、胺磺醯基、及磺醯胺基所成群組的取代基，或選自由：羥基、羧基、磺酸基、胺基、胺甲醯基、羧酸醯胺基、胺磺醯基、及磺醯胺基所成群組的至少1個取代基所取代的烷基或芳基者。
如上所述，在由切削液供給噴嘴56被供給的切削液中含有氧化劑，因此因該氧化劑，在習知之使用微生物的生物處理中，微生物會死滅，而有無法分解切削廢液中的有機物而將未符合排液基準的切削廢液進行排液之虞。
但是，在本實施形態中，由於在排液管82的途中設有具有廢液處理手段的廢液處理槽84，因此由複數LED86對貯留在處理槽84內的切削廢液照射紫外線，而可將切削廢液中的有機物進行分解，因此可防止將未符合排液基準的切削廢液進行排液之虞。
在上述之實施形態中，係說明採用封裝體基板2作為被加工物之例，惟被加工物並非為限定於封裝體
基板者，亦可為包含積層有作為背面電極之厚度數μm的導電體膜(由Ti、Ni、Au等所成之多層金屬膜)的晶圓、在表面的切割道(street)上形成有TEG的晶圓等者。
當以具備有具有作為上述廢液處理手段之LED86的廢液處理槽84的切削裝置20，一邊供給包含有機酸及氧化劑的切削液一邊切削封裝體基板2時，在氧化劑的分解，利用具有分解波長的光能量，而非添加劑，藉此不需要添加劑或溫度管理而可將運轉成本抑制較低。
在上述之實施形態中，係說明將由LED86照射紫外線的廢液處理槽84使用在切削裝置的廢液處理之例，惟廢液處理槽84並非為限定於切削裝置者，亦可同樣地適用在研削裝置、切削刀具切削裝置等其他加工裝置。
82:排液管
84:廢液處理槽
86:LED
88:透明板
Claims (1)
- 一種加工裝置，其係具備有：保持被加工物的保持手段、及將被保持在該保持手段的被加工物進行加工的加工手段，該加工裝置之特徵為：另外具備有：加工液供給手段，其係當將被保持在該保持手段的被加工物以該加工手段進行加工時，至少對被加工物供給含有氧化劑的加工液；加工廢液回收部，其係位於該加工裝置的基座的內部，回收包含由該加工液供給手段被供給至被加工物的該加工液的加工廢液；排出路，其係位於該加工裝置的基座的內部，由該加工廢液回收部，將該加工廢液排出至該加工裝置外；及處理槽，其係被配設在該排出路的途中且貯留在該加工廢液回收部被回收的加工廢液，且具有將該加工廢液所包含的加工液進行分解的廢液處理手段，該氧化劑係過氧化氫，該廢液處理手段係包含：對該加工廢液照射紫外線的紫外線照射手段。
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| Application Number | Priority Date | Filing Date | Title |
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| JP2018-024394 | 2018-02-14 | ||
| JP2018024394A JP7150390B2 (ja) | 2018-02-14 | 2018-02-14 | 加工装置 |
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| TW201934252A TW201934252A (zh) | 2019-09-01 |
| TWI801498B true TWI801498B (zh) | 2023-05-11 |
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| TW108104693A TWI801498B (zh) | 2018-02-14 | 2019-02-13 | 加工裝置 |
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| JP (1) | JP7150390B2 (zh) |
| KR (1) | KR20190098697A (zh) |
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| TW (1) | TWI801498B (zh) |
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Also Published As
| Publication number | Publication date |
|---|---|
| TW201934252A (zh) | 2019-09-01 |
| KR20190098697A (ko) | 2019-08-22 |
| CN110153780A (zh) | 2019-08-23 |
| JP2019136844A (ja) | 2019-08-22 |
| JP7150390B2 (ja) | 2022-10-11 |
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