TWI800618B - 電漿處理裝置 - Google Patents

電漿處理裝置 Download PDF

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Publication number
TWI800618B
TWI800618B TW108108426A TW108108426A TWI800618B TW I800618 B TWI800618 B TW I800618B TW 108108426 A TW108108426 A TW 108108426A TW 108108426 A TW108108426 A TW 108108426A TW I800618 B TWI800618 B TW I800618B
Authority
TW
Taiwan
Prior art keywords
processing apparatus
plasma processing
plasma
processing
Prior art date
Application number
TW108108426A
Other languages
English (en)
Other versions
TW201941665A (zh
Inventor
奧西直彥
関口克巳
油井隆一
Original Assignee
日商東京威力科創股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商東京威力科創股份有限公司 filed Critical 日商東京威力科創股份有限公司
Publication of TW201941665A publication Critical patent/TW201941665A/zh
Application granted granted Critical
Publication of TWI800618B publication Critical patent/TWI800618B/zh

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32715Workpiece holder
    • H01J37/32724Temperature
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/32174Circuits specially adapted for controlling the RF discharge
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32715Workpiece holder
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833Details of electrostatic chucks
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05HPLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00Generating plasma; Handling plasma
    • H05H1/24Generating plasma
    • H05H1/46Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05HPLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H2242/00Auxiliary systems
    • H05H2242/20Power circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Electromagnetism (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Plasma Technology (AREA)
TW108108426A 2018-03-26 2019-03-13 電漿處理裝置 TWI800618B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2018057734 2018-03-26
JP2018-057734 2018-03-26
JP2019-029689 2019-02-21
JP2019029689A JP7208819B2 (ja) 2018-03-26 2019-02-21 プラズマ処理装置

Publications (2)

Publication Number Publication Date
TW201941665A TW201941665A (zh) 2019-10-16
TWI800618B true TWI800618B (zh) 2023-05-01

Family

ID=68169689

Family Applications (1)

Application Number Title Priority Date Filing Date
TW108108426A TWI800618B (zh) 2018-03-26 2019-03-13 電漿處理裝置

Country Status (4)

Country Link
JP (1) JP7208819B2 (zh)
KR (1) KR102641619B1 (zh)
CN (1) CN110366304B (zh)
TW (1) TWI800618B (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2023012988A (ja) * 2021-07-15 2023-01-26 東京エレクトロン株式会社 フィルタ回路およびプラズマ処理装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100194278A1 (en) * 2009-02-02 2010-08-05 Chien Ouyang Flow manipulation with micro plasma
CN101974735A (zh) * 2007-11-21 2011-02-16 东京毅力科创株式会社 感应耦合等离子体处理装置
US20140110061A1 (en) * 2012-10-19 2014-04-24 Tokyo Electron Limited Plasma processing apparatus
TW201743661A (zh) * 2011-11-22 2017-12-16 蘭姆研究公司 電漿邊緣區域之控制系統與方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002185339A (ja) * 2000-12-12 2002-06-28 Kokusai Denki Engineering:Kk 放熱素子とそれを用いた高周波電子回路基板
US6541764B2 (en) * 2001-03-21 2003-04-01 Archimedes Technology Group, Inc. Helically symmetric plasma mass filter
US7209096B2 (en) * 2004-01-22 2007-04-24 Antenex, Inc. Low visibility dual band antenna with dual polarization
JP5042661B2 (ja) * 2007-02-15 2012-10-03 東京エレクトロン株式会社 プラズマ処理装置及びフィルタユニット
JP5301812B2 (ja) * 2007-11-14 2013-09-25 東京エレクトロン株式会社 プラズマ処理装置
JP6027374B2 (ja) * 2012-09-12 2016-11-16 東京エレクトロン株式会社 プラズマ処理装置及びフィルタユニット
JP6081292B2 (ja) 2012-10-19 2017-02-15 東京エレクトロン株式会社 プラズマ処理装置
JP5734353B2 (ja) * 2013-06-20 2015-06-17 東京エレクトロン株式会社 プラズマ処理装置
JP6218650B2 (ja) * 2014-03-11 2017-10-25 東京エレクトロン株式会社 プラズマ処理装置
JP6219227B2 (ja) * 2014-05-12 2017-10-25 東京エレクトロン株式会社 ヒータ給電機構及びステージの温度制御方法
JP6219229B2 (ja) * 2014-05-19 2017-10-25 東京エレクトロン株式会社 ヒータ給電機構
JP2016001647A (ja) * 2014-06-11 2016-01-07 東京エレクトロン株式会社 プラズマ処理装置
US10715095B2 (en) * 2017-10-06 2020-07-14 Lam Research Corporation Radiofrequency (RF) filter for multi-frequency RF bias

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101974735A (zh) * 2007-11-21 2011-02-16 东京毅力科创株式会社 感应耦合等离子体处理装置
US20100194278A1 (en) * 2009-02-02 2010-08-05 Chien Ouyang Flow manipulation with micro plasma
TW201743661A (zh) * 2011-11-22 2017-12-16 蘭姆研究公司 電漿邊緣區域之控制系統與方法
US20140110061A1 (en) * 2012-10-19 2014-04-24 Tokyo Electron Limited Plasma processing apparatus

Also Published As

Publication number Publication date
KR20190112664A (ko) 2019-10-07
CN110366304B (zh) 2022-12-23
KR102641619B1 (ko) 2024-02-27
JP7208819B2 (ja) 2023-01-19
CN110366304A (zh) 2019-10-22
JP2019176138A (ja) 2019-10-10
TW201941665A (zh) 2019-10-16

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