TWI799529B - 放大器 - Google Patents
放大器 Download PDFInfo
- Publication number
- TWI799529B TWI799529B TW108107987A TW108107987A TWI799529B TW I799529 B TWI799529 B TW I799529B TW 108107987 A TW108107987 A TW 108107987A TW 108107987 A TW108107987 A TW 108107987A TW I799529 B TWI799529 B TW I799529B
- Authority
- TW
- Taiwan
- Prior art keywords
- amplifier
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
- H03F1/22—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
- H03F1/223—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively with MOSFET's
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/211—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/181—Low-frequency amplifiers, e.g. audio preamplifiers
- H03F3/183—Low-frequency amplifiers, e.g. audio preamplifiers with semiconductor devices only
- H03F3/187—Low-frequency amplifiers, e.g. audio preamplifiers with semiconductor devices only in integrated circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/34—DC amplifiers in which all stages are DC-coupled
- H03F3/343—DC amplifiers in which all stages are DC-coupled with semiconductor devices only
- H03F3/347—DC amplifiers in which all stages are DC-coupled with semiconductor devices only in integrated circuits
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
- H04N25/617—Noise processing, e.g. detecting, correcting, reducing or removing noise for reducing electromagnetic interference, e.g. clocking noise
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
- H04N25/618—Noise processing, e.g. detecting, correcting, reducing or removing noise for random or high-frequency noise
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
- H03F1/301—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in MOSFET amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
- H03F1/302—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in bipolar transistor amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/18—Indexing scheme relating to amplifiers the bias of the gate of a FET being controlled by a control signal
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/429—Two or more amplifiers or one amplifier with filters for different frequency bands are coupled in parallel at the input or output
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/432—Two or more amplifiers of different type are coupled in parallel at the input or output, e.g. a class D and a linear amplifier, a class B and a class A amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
- H03F3/16—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with field-effect devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/72—Gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Amplifiers (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018092058 | 2018-05-11 | ||
JP2018-092058 | 2018-05-11 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201947873A TW201947873A (zh) | 2019-12-16 |
TWI799529B true TWI799529B (zh) | 2023-04-21 |
Family
ID=68466935
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW108107987A TWI799529B (zh) | 2018-05-11 | 2019-03-11 | 放大器 |
Country Status (4)
Country | Link |
---|---|
US (1) | US11502647B2 (zh) |
CN (1) | CN112055962B (zh) |
TW (1) | TWI799529B (zh) |
WO (1) | WO2019215973A1 (zh) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060244527A1 (en) * | 2003-10-17 | 2006-11-02 | Sanken Electric Co., Ltd. | Amplifying circuit, noise reducing apparatus and power converting apparatus |
JP2018019335A (ja) * | 2016-07-29 | 2018-02-01 | ソニー株式会社 | 撮像素子および撮像装置 |
CN107925731A (zh) * | 2015-08-20 | 2018-04-17 | 索尼半导体解决方案公司 | 固态成像装置、固态成像装置的驱动方法和电子设备 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6791418B2 (en) * | 2002-10-02 | 2004-09-14 | Koninklijke Philips Electronics N.V. | Capacitor coupled dynamic bias boosting circuit for a power amplifier |
JP2007150433A (ja) * | 2005-11-24 | 2007-06-14 | Sharp Corp | 可変利得増幅器およびそれを用いた送受信装置 |
JP2008271159A (ja) * | 2007-04-19 | 2008-11-06 | Matsushita Electric Ind Co Ltd | 固体撮像装置 |
JP2009303042A (ja) | 2008-06-16 | 2009-12-24 | Sony Corp | デジタル・アナログ変換回路、固体撮像装置、カメラシステム及びデジタルコードのアナログ変換方法 |
CN101834567B (zh) * | 2010-06-03 | 2012-07-04 | 中国人民解放军国防科学技术大学 | 宽带增益可调低噪声放大器 |
JP5672975B2 (ja) * | 2010-11-01 | 2015-02-18 | 富士通セミコンダクター株式会社 | 可変利得増幅器 |
JP2012109658A (ja) * | 2010-11-15 | 2012-06-07 | Sony Corp | 固体撮像素子及び参照電圧の調整方法 |
JP6407083B2 (ja) * | 2015-03-30 | 2018-10-17 | キヤノン株式会社 | 光電変換装置、および、光電変換システム |
JP6708381B2 (ja) * | 2015-08-25 | 2020-06-10 | キヤノン株式会社 | 光電変換装置、および、光電変換システム |
JP2017092526A (ja) * | 2015-11-02 | 2017-05-25 | 株式会社村田製作所 | 電力増幅回路 |
-
2019
- 2019-02-08 WO PCT/JP2019/004575 patent/WO2019215973A1/ja active Application Filing
- 2019-02-08 CN CN201980029377.0A patent/CN112055962B/zh active Active
- 2019-02-08 US US17/049,901 patent/US11502647B2/en active Active
- 2019-03-11 TW TW108107987A patent/TWI799529B/zh active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060244527A1 (en) * | 2003-10-17 | 2006-11-02 | Sanken Electric Co., Ltd. | Amplifying circuit, noise reducing apparatus and power converting apparatus |
CN107925731A (zh) * | 2015-08-20 | 2018-04-17 | 索尼半导体解决方案公司 | 固态成像装置、固态成像装置的驱动方法和电子设备 |
JP2018019335A (ja) * | 2016-07-29 | 2018-02-01 | ソニー株式会社 | 撮像素子および撮像装置 |
Also Published As
Publication number | Publication date |
---|---|
CN112055962A (zh) | 2020-12-08 |
US20210242838A1 (en) | 2021-08-05 |
CN112055962B (zh) | 2023-07-25 |
WO2019215973A1 (ja) | 2019-11-14 |
US11502647B2 (en) | 2022-11-15 |
TW201947873A (zh) | 2019-12-16 |
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