TWI796507B - Resin composition for sheet-like sealing, and semiconductor device - Google Patents
Resin composition for sheet-like sealing, and semiconductor device Download PDFInfo
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- TWI796507B TWI796507B TW108126135A TW108126135A TWI796507B TW I796507 B TWI796507 B TW I796507B TW 108126135 A TW108126135 A TW 108126135A TW 108126135 A TW108126135 A TW 108126135A TW I796507 B TWI796507 B TW I796507B
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
- C08G59/62—Alcohols or phenols
- C08G59/621—Phenols
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
- C08G59/62—Alcohols or phenols
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/01—Use of inorganic substances as compounding ingredients characterized by their specific function
- C08K3/011—Crosslinking or vulcanising agents, e.g. accelerators
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/01—Use of inorganic substances as compounding ingredients characterized by their specific function
- C08K3/013—Fillers, pigments or reinforcing additives
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L61/00—Compositions of condensation polymers of aldehydes or ketones; Compositions of derivatives of such polymers
- C08L61/04—Condensation polymers of aldehydes or ketones with phenols only
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
- H01L23/295—Organic, e.g. plastic containing a filler
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Abstract
本發明係一種片狀密封用樹脂組合物，其特徵在於：其係含有(A)環氧樹脂、(B)酚樹脂硬化劑、(C)硬化促進劑、及(D)無機填充材者，且 上述片狀密封用樹脂組合物之80質量%以上為具有平行之一對平面且該一對平面間之距離為150~1000 μm的含有平行面之樹脂組合物， 上述片狀密封用樹脂組合物中所包含之藉由使用JIS標準篩之分級而通過標稱網眼150 μm之篩的片狀密封用樹脂組合物為5質量%以下，且未通過標稱網眼2 mm之篩之片狀密封用樹脂組合物為5質量%以下。The present invention is a resin composition for sheet-like sealing, characterized in that it contains (A) epoxy resin, (B) phenol resin hardener, (C) hardening accelerator, and (D) inorganic filler, and More than 80% by mass of the above-mentioned sheet-shaped sealing resin composition is a resin composition containing parallel planes having a pair of parallel planes and the distance between the pair of planes is 150 to 1000 μm, The sheet-shaped sealing resin composition contained in the above-mentioned sheet-shaped sealing resin composition is 5% by mass or less of the sheet-shaped sealing resin composition that passes through a sieve with a nominal mesh size of 150 μm by classification using a JIS standard sieve, and does not pass through the nominal mesh. The resin composition for sheet-shaped sealing with a 2 mm sieve is 5% by mass or less.
Description
本發明係關於一種片狀之半導體密封用樹脂組合物、及半導體裝置。The present invention relates to a sheet-like resin composition for semiconductor sealing and a semiconductor device.
電晶體、IC(Integrated Circuit，積體電路)、LSI(Large Scale Integration，大型積體電路)等半導體裝置中之密封材料係使用於環氧樹脂中調配硬化劑及/或硬化促進劑、氧化矽粉末等無機填充材、著色劑等而成樹脂組合物。 先前，使用此種密封材料之密封製程一般而言為轉移成形。然而，近年來，伴隨著電子零件向印刷配線板之高密度封裝化，半導體裝置之主流正自插件型(pin-insertion type)封裝體向表面黏著型封裝體轉移。進而，表面黏著型封裝體之薄型化、小型化進展。若為經薄型化、小型化之表面黏著型封裝體，則相對於封裝體之半導體元件佔有體積亦變大，覆蓋半導體元件之密封樹脂之厚度變薄。又，隨著半導體元件之多功能化、大容量化，晶片面積之增大、多接腳化進展。進而由於電極墊數之增加，墊距、墊尺寸之小型化即所謂窄墊距化亦進展。Sealing materials in semiconductor devices such as transistors, IC (Integrated Circuit), and LSI (Large Scale Integration, large-scale integrated circuits) are used to prepare hardeners and/or hardening accelerators, silicon oxides, etc. in epoxy resins Inorganic fillers such as powders, colorants, etc. are used to form resin compositions. Previously, the sealing process using this type of sealing material was generally transfer molding. However, in recent years, along with the high-density packaging of electronic components to printed wiring boards, the mainstream of semiconductor devices is shifting from pin-insertion type packages to surface mount type packages. Furthermore, the thinning and miniaturization of surface mount packages are progressing. If it is a thinner and smaller surface-mount package, the volume occupied by the semiconductor element relative to the package will also increase, and the thickness of the sealing resin covering the semiconductor element will become thinner. In addition, with the multi-functionalization and large-capacity of semiconductor elements, the increase of chip area and the development of multi-pins are progressing. Furthermore, due to the increase in the number of electrode pads, miniaturization of the pad pitch and pad size, that is, the so-called narrow pad pitch is also progressing.
另一方面，搭載半導體元件之基板無法實現半導體元件程度之電極墊之狹間距化。因此，藉由使自半導體元件引出之接合線變長、或細線化而應對多端子化。然而，若導線變細，則於之後之樹脂密封步驟中導線容易因樹脂之注入壓力而偏移。尤其於側澆口(side gate)方式之轉移成形中該傾向較為顯著。On the other hand, it is impossible to narrow the pitch of electrode pads on the level of semiconductor elements on substrates on which semiconductor elements are mounted. Therefore, it is possible to deal with multi-terminalization by lengthening or thinning the bonding wire drawn from the semiconductor element. However, if the lead wire becomes thinner, the lead wire is easily shifted due to the injection pressure of the resin in the subsequent resin sealing step. This tendency is remarkable especially in side gate transfer molding.
因此，作為代替轉移成形之密封製程，開始使用壓縮成形法(例如參照專利文獻1)。該方法如下：使被密封物(例如安裝有半導體元件之基板等)吸附於上模，另一方面，以與其對向之方式向下模供給粉粒狀樹脂(密封材料)，一面使下模上升，一面對被密封物與密封材料加壓以進行密封成形。根據壓縮成形法，由於熔融之密封材料在與被密封物之主表面大致平行之方向上流動，故可減少流動量，而可期待降低由樹脂之流動所導致之被密封物(例如，安裝有半導體元件之基板中之導線或配線等)之變形、破損。Therefore, compression molding has been used as a sealing process instead of transfer molding (for example, refer to Patent Document 1). The method is as follows: the object to be sealed (for example, a substrate mounted with a semiconductor element, etc.) is adsorbed to the upper mold, and on the other hand, the powdery resin (sealing material) is supplied to the lower mold in a manner facing it, and the lower mold Ascending, one side pressurizes the object to be sealed and the sealing material to form a seal. According to the compression molding method, since the molten sealing material flows in a direction substantially parallel to the main surface of the object to be sealed, the amount of flow can be reduced, and it can be expected to reduce the amount of flow caused by the flow of the resin Deformation and damage of wires or wiring in the substrate of the semiconductor device.
然而，即便將先前之轉移成形中所使用之密封材料應用於壓縮成形法，亦由於其填充性較低等而無法充分地獲得如上述之所需效果。作為適於壓縮成形法之密封材料，例如於專利文獻2中揭示有如下粉粒狀樹脂組合物，其含有環氧樹脂、硬化劑、硬化促進劑、無機填充材等，且具有粒徑100 μm~3 mm之粒子為85質量%以上之粒度分佈。於專利文獻3中揭示有如下粉粒狀半導體密封材料，其藉由將壓縮度設定為6~11%之範圍內，而防止朝料斗等之附著或交聯現象，實現了流動性之穩定化、計量精度之提昇。專利文獻4中揭示有如下顆粒狀樹脂組合物，其藉由將包裝密度(Packed Bulk Density)設為0.8 g/cm3
以上且1.1 g/cm3
以下，而提昇了搬送性或稱量精度等。
先前技術文獻
專利文獻However, even if the sealing material used in the conventional transfer molding is applied to the compression molding method, the desired effect as described above cannot be sufficiently obtained due to its low fillability and the like. As a sealing material suitable for compression molding, for example,
專利文獻1：日本專利特開2008-279599號公報 專利文獻2：日本專利特開2011-153173號公報 專利文獻3：日本專利特開2000-232188號公報 專利文獻4：日本專利特開2008-303366號公報Patent Document 1: Japanese Patent Laid-Open No. 2008-279599 Patent Document 2: Japanese Patent Laid-Open No. 2011-153173 Patent Document 3: Japanese Patent Laid-Open No. 2000-232188 Patent Document 4: Japanese Patent Laid-Open No. 2008-303366
[發明所欲解決之問題][Problem to be solved by the invention]
然而，上述專利文獻2~4中所記載之密封材料均密封樹脂厚度較薄，又，作為密封藉由細且長之接合線所連接之半導體元件之材料並不足夠。尤其是於減少導線之變形、破損(導線偏移)或改善成形性等方面上不足。
進而，隨著半導體裝置之大容量化及高功能化，積層複數個半導體元件之情形亦增加。若積層複數個半導體元件，則半導體元件上之密封材料之厚度變薄，因此於半導體元件上產生未填充部分。又，若未完全地利用樹脂成形物密封半導體元件，則無法於可靠性試驗中確保充分之特性。However, the sealing materials described in the above-mentioned
本發明提供一種可用於壓縮成形法、充分地減少成形時之導線偏移、且充分地提昇成形性之片狀密封用樹脂組合物；及使用該密封用樹脂組合物得以密封之具有較高可靠性之半導體裝置。 [解決問題之技術手段]The present invention provides a sheet-shaped sealing resin composition that can be used in compression molding, sufficiently reduce lead deviation during molding, and sufficiently improve formability; sexual semiconductor devices. [Technical means to solve the problem]
本發明者等人發現，若密封用樹脂組合物具有如下述之特定形狀，則可獲得壓縮成形法中之導線偏移之減少或良好之成形性。The inventors of the present invention have found that if the resin composition for sealing has a specific shape as described below, it is possible to obtain reduced lead wire deviation or good formability in compression molding.
即，本發明提供以下[1]~[5]。 [1]一種片狀密封用樹脂組合物，其係含有(A)環氧樹脂、(B)酚樹脂硬化劑、(C)硬化促進劑、及(D)無機填充材者，且 上述片狀密封用樹脂組合物之80質量%以上為具有平行之一對平面且該一對平面間之距離為150~1000 μm的含有平行面之樹脂組合物， 上述片狀密封用樹脂組合物中所包含之藉由使用JIS標準篩之分級而通過標稱網眼150 μm之篩的片狀密封用樹脂組合物為5質量%以下，且未通過標稱網眼2 mm之篩之片狀密封用樹脂組合物為5質量%以下。 [2]如上述[1]所記載之片狀密封用樹脂組合物，其中上述片狀密封用樹脂組合物中包含之藉由使用JIS標準篩之分級而通過標稱網眼超過150 μm且為1 mm以下之篩的片狀密封用樹脂組合物為20質量%以上。 [3]如上述[1]或[2]所記載之片狀密封用樹脂組合物，其中下述式(1)所表示之間隙率為60%以下； 間隙率(%)={1-(樹脂供給面積/模腔面積)}×100 式(1) (此處，間隙率表示將密封用樹脂組合物供給至模腔內時未由該密封用樹脂組合物被覆之面積比率，模腔面積係成形模具之底部之有效面積，樹脂供給面積表示由密封用樹脂組合物被覆之面積)。 [4]一種半導體裝置，其係使用如上述[1]至[3]中任一項所記載之片狀密封用樹脂組合物藉由壓縮成形而密封半導體元件而成。 [5]如上述[4]所記載之半導體裝置，其中上述半導體裝置之半導體元件上之密封材料之厚度為200 μm以下。 [發明之效果]That is, the present invention provides the following [1] to [5]. [1] A sheet-shaped sealing resin composition containing (A) an epoxy resin, (B) a phenol resin hardener, (C) a hardening accelerator, and (D) an inorganic filler, and More than 80% by mass of the above sheet-shaped sealing resin composition is a resin composition containing parallel planes having a pair of parallel planes and the distance between the pair of planes is 150 to 1000 μm, The sheet-shaped sealing resin composition contained in the above-mentioned sheet-shaped sealing resin composition is 5% by mass or less of the sheet-shaped sealing resin composition that passes through a sieve with a nominal mesh size of 150 μm by classification using a JIS standard sieve, and does not pass through the nominal mesh. The resin composition for sheet-shaped sealing with a 2 mm sieve is 5% by mass or less. [2] The sheet-shaped sealing resin composition as described in the above [1], wherein the resin composition for sheet-shaped sealing contained in the above-mentioned sheet-shaped sealing resin composition passes through a nominal mesh of more than 150 μm by classification using a JIS standard sieve and is The sheet-shaped sealing resin composition having a sieve of 1 mm or less is 20% by mass or more. [3] The sheet-shaped sealing resin composition according to the above [1] or [2], wherein the void ratio represented by the following formula (1) is 60% or less; Gap ratio (%)={1-(resin supply area/cavity area)}×100 Formula (1) (Here, the gap ratio means the ratio of the area not covered by the sealing resin composition when the sealing resin composition is supplied into the mold cavity, the cavity area means the effective area of the bottom of the molding die, and the resin supply area means the ratio of the area covered by the sealing resin composition. area covered with resin composition). [4] A semiconductor device obtained by sealing a semiconductor element by compression molding using the sheet-shaped sealing resin composition described in any one of [1] to [3] above. [5] The semiconductor device described in [4] above, wherein the thickness of the sealing material on the semiconductor element of the semiconductor device is 200 μm or less. [Effect of Invention]
根據本發明，能夠提供一種可用於壓縮成形法、可充分地減少成形時之導線偏移、且可充分地提昇成形性之片狀密封用樹脂組合物；及使用該密封用樹脂組合物得以密封之具有較高可靠性之半導體裝置。According to the present invention, it is possible to provide a sheet-shaped sealing resin composition which can be used in compression molding, which can sufficiently reduce lead deviation during molding, and which can sufficiently improve moldability; and sealing by using the sealing resin composition Semiconductor devices with high reliability.
以下，一面參照作為一實施形態之片狀密封用樹脂組合物、半導體裝置及半導體裝置之製造方法，一面對本發明詳細地說明。 [片狀密封用樹脂組合物] 本實施形態之片狀密封用樹脂組合物(以下亦簡稱為密封用樹脂組合物)係含有(A)環氧樹脂、(B)酚樹脂硬化劑、(C)硬化促進劑及(D)無機填充材者， 上述片狀密封用樹脂組合物之80質量%以上為具有平行之一對平面且該一對平面間之距離為150~1000 μm的含有平行面之樹脂組合物， 上述片狀密封用樹脂組合物中包含之藉由使用JIS標準篩之分級而通過標稱網眼150 μm之篩的片狀密封用樹脂組合物為5質量%以下，且未通過標稱網眼2 mm之篩之片狀密封用樹脂組合物為5質量%以下。Hereinafter, the present invention will be described in detail with reference to a sheet-shaped sealing resin composition, a semiconductor device, and a method for manufacturing a semiconductor device that are one embodiment. [Resin composition for sheet sealing] The sheet-shaped resin composition for sealing (hereinafter referred to simply as the resin composition for sealing) of this embodiment contains (A) epoxy resin, (B) phenolic resin hardener, (C) hardening accelerator and (D) inorganic filler, More than 80% by mass of the above-mentioned sheet-shaped sealing resin composition is a resin composition containing parallel planes having a pair of parallel planes and the distance between the pair of planes is 150 to 1000 μm, The sheet-shaped sealing resin composition contained in the above-mentioned sheet-shaped sealing resin composition is 5% by mass or less of the sheet-shaped sealing resin composition that passes through a sieve with a nominal mesh size of 150 μm by classification using a JIS standard sieve, and does not pass through the nominal mesh size The resin composition for sheet-shaped sealing with a sieve of 2 mm is 5% by mass or less.
此處，「片狀」包括扁平狀、薄片狀、鱗片狀等形狀。關於本實施形態之片狀密封用樹脂組合物，該密封用樹脂組合物之80質量%以上為具有平行之一對平面且該一對平面間之距離(以下亦稱為厚度)為150~1000 μm的含有平行面之樹脂組合物。 此處，「平行」意指每個密封用樹脂組合物之最大厚度與最小厚度之差相對於該密封用樹脂組合物之平均厚度的比率為5%以下。 若上述密封用樹脂組合物之厚度未達150 μm，則變得容易受靜電之影響而凝聚。所凝聚之密封用樹脂組合物有熱難以均勻地傳遞而溶解性降低之虞。又，若該密封用樹脂組合物之厚度超過1000 μm，則有熱難以均勻地傳遞而溶解性降低之虞。就此種觀點而言，密封用樹脂組合物之厚度可為150~700 μm，可為150~500 μm，亦可為200~400 μm。 再者，上述片狀密封用樹脂組合物之厚度例如可使用光學顯微鏡(倍率：200倍)測定50個密封用樹脂組合物之厚度，以其等之平均值之形成求出。Here, the "flaky shape" includes shapes such as flat shape, flake shape, and scale shape. With regard to the sheet-shaped sealing resin composition of this embodiment, more than 80% by mass of the sealing resin composition has a pair of parallel planes and the distance between the pair of planes (hereinafter also referred to as thickness) is 150 to 1000. μm resin composition containing parallel planes. Here, "parallel" means that the ratio of the difference between the maximum thickness and the minimum thickness of each sealing resin composition to the average thickness of the sealing resin composition is 5% or less. When the thickness of the said resin composition for sealing is less than 150 micrometers, it becomes easy to aggregate under the influence of static electricity. The aggregated resin composition for sealing may be difficult to transfer heat uniformly, and the solubility may decrease. Moreover, when the thickness of this sealing resin composition exceeds 1000 micrometers, it may become difficult to transfer heat uniformly, and there exists a possibility that solubility may fall. From this point of view, the thickness of the sealing resin composition may be 150-700 μm, 150-500 μm, or 200-400 μm. In addition, the thickness of the said sheet-shaped resin composition for sealing can be obtained by measuring the thickness of 50 resin compositions for sealing using an optical microscope (magnification: 200 times), for example, and forming the average value thereof.
又，本實施形態之片狀密封用樹脂組合物中所包含之具有上述形狀之密封用樹脂組合物(含有平行面之樹脂組合物)的比率可為90質量%以上，可為95質量%以上，亦可為100質量%。 再者，本實施形態之片狀密封用樹脂組合物亦可包含非片狀之樹脂組合物、不具有上述形狀之樹脂組合物。於本實施形態之片狀密封用樹脂組合物包含非片狀之樹脂組合物、不具有上述形狀之樹脂組合物之情形時，其含量相對於該片狀密封用樹脂組合物總量，可為20質量%以下，可為10質量%以下，可為5質量%以下，亦可不包含。In addition, the ratio of the sealing resin composition having the above-mentioned shape (resin composition including parallel planes) contained in the sheet-shaped sealing resin composition of this embodiment may be 90% by mass or more, and may be 95% by mass or more. , can also be 100% by mass. In addition, the resin composition for sheet-shaped sealing of this embodiment may contain the resin composition which is not a sheet shape, and the resin composition which does not have the said shape. When the sheet-shaped sealing resin composition according to this embodiment includes a non-sheet-shaped resin composition or a resin composition not having the above-mentioned shape, the content thereof can be as follows with respect to the total amount of the sheet-shaped sealing resin composition. 20% by mass or less, may be 10% by mass or less, may be 5% by mass or less, or may not be included.
本實施形態之片狀密封用樹脂組合物中所包含之藉由使用JIS標準篩(JIS Z8801-1：2006規定)之分級而通過標稱網眼150 μm之篩的片狀密封用樹脂組合物(以下亦稱為密封用樹脂組合物a)為5質量%以下，且未通過標稱網眼2 mm之篩之片狀密封用樹脂組合物(以下亦稱為密封用樹脂組合物b)為5質量%以下。若密封用樹脂組合物a之含量超過5質量%，則有於供給至壓縮成形用模具時，該密封用樹脂組合物a易飛揚，而產生由飛散之該密封用樹脂組合物a導致之污染或計量不良等之虞。就此種觀點而言，片狀密封用樹脂組合物中所包含之密封用樹脂組合物a可為3質量%以下，亦可為2質量%以下。又，若密封用樹脂組合物b之含量超過5質量%，則有於成形時產生導線之變形及破損之虞，又，有於硬化物中產生空隙之虞。就此種觀點而言，片狀密封用樹脂組合物中所包含之密封用樹脂組合物b可為3質量%以下，亦可為2質量%以下。The sheet-shaped sealing resin composition contained in the sheet-shaped sealing resin composition of this embodiment is classified using a JIS standard sieve (JIS Z8801-1:2006 regulation) and passed through a sieve with a nominal mesh size of 150 μm (hereinafter also referred to as sealing resin composition a) is 5% by mass or less, and a sheet-shaped sealing resin composition (hereinafter also referred to as sealing resin composition b) that does not pass through a sieve with a nominal mesh size of 2 mm is 5% by mass or less. If the content of the sealing resin composition a exceeds 5% by mass, the sealing resin composition a is likely to fly when supplied to a compression molding die, and contamination caused by the flying sealing resin composition a may occur. or poor measurement. From such a viewpoint, the resin composition a for sealing contained in the resin composition for sheet-like sealing may be 3 mass % or less, and may be 2 mass % or less. Also, if the content of the sealing resin composition b exceeds 5% by mass, there is a possibility that deformation and breakage of the lead wire may occur during molding, and voids may be generated in the cured product. From such a viewpoint, the resin composition b for sealing contained in the resin composition for sheet-shaped sealing may be 3 mass % or less, and may be 2 mass % or less.
又，本實施形態之片狀密封用樹脂組合物可包含藉由使用JIS標準篩(JIS Z8801-1：2006規定)之分級而通過標稱網眼超過150 μm且為2 mm以下之篩的片狀密封用樹脂組合物，亦可包含藉由使用JIS標準篩(JIS Z8801-1：2006規定)之分級而通過標稱網眼超過150 μm且為1 mm以下之篩的片狀密封用樹脂組合物(以下亦稱為密封用樹脂組合物c)。此處，通過標稱網眼超過150 μm且為1 mm以下之篩之片狀密封用樹脂組合物係指未通過標稱網眼150 μm之篩而通過標稱網眼1 mm之篩的片狀密封用樹脂組合物。作為密封用樹脂組合物c之含量，可為20質量%以上，可為40質量%以上，亦可為60質量%以上。若含有20質量%以上之密封用樹脂組合物c，則填充性變良好，可減少於硬化物產生空隙等。又，上限值並無特別限定，可為100質量%，亦可為90質量%。In addition, the sheet-shaped sealing resin composition of the present embodiment may include a sheet that has passed through a sieve whose nominal opening exceeds 150 μm and is 2 mm or less by classification using a JIS standard sieve (specified in JIS Z8801-1:2006). The resin composition for shape sealing may also include a combination of sheet-shaped sealing resins that pass through a sieve whose nominal opening exceeds 150 μm and is 1 mm or less by classification using JIS standard sieves (JIS Z8801-1:2006 regulations) (hereinafter also referred to as sealing resin composition c). Here, the sheet-shaped sealing resin composition that passes through a sieve with a nominal mesh size of more than 150 μm and a size of 1 mm or less refers to a sheet that does not pass through a sieve with a nominal mesh size of 150 μm but passes through a sieve with a nominal mesh size of 1 mm. Resin composition for shape sealing. As content of the resin composition c for sealing, it may be 20 mass % or more, 40 mass % or more, and may be 60 mass % or more. When the sealing resin composition c is contained in an amount of 20% by mass or more, the filling property becomes good, and generation of voids in the cured product can be reduced. Moreover, the upper limit value is not specifically limited, It may be 100 mass %, and may be 90 mass %.
就提高填充性、減少空隙之產生之觀點而言，本實施形態之片狀密封用樹脂組合物中所包含之藉由使用JIS標準篩(JIS Z8801-1：2006規定)之分級而通過標稱網眼超過1 mm且為2 mm以下之篩的片狀密封用樹脂組合物(以下亦稱密封用樹脂組合物d)之含量可為10~75質量%，可為15~50質量%，亦可為18~40質量%。From the standpoint of improving fillability and reducing the generation of voids, the sheet-shaped sealing resin composition contained in the present embodiment passes the nominal The content of the sheet-shaped sealing resin composition (hereinafter also referred to as the sealing resin composition d) of a sieve with a mesh of more than 1 mm and 2 mm may be 10 to 75% by mass, 15 to 50% by mass, or It may be 18 to 40% by mass.
[(A)環氧樹脂] 關於本實施形態中所使用之(A)成分之環氧樹脂，只要為1分子中具有2個以上環氧基者，則可不受分子結構、分子量等限制而廣泛地使用一般用作電子零件之密封材料者。 作為(A)成分之環氧樹脂，例如可列舉：聯苯型環氧樹脂、甲酚系酚醛清漆型環氧樹脂、酚系酚醛清漆型環氧樹脂、雙酚A型環氧樹脂、雙酚F型環氧樹脂、雙酚S型環氧樹脂、二環戊二烯型環氧樹脂、三苯酚甲烷型環氧樹脂、含三𠯤核之環氧樹脂等雜環型環氧樹脂、茋型二官能環氧樹脂、萘型環氧樹脂、縮合環芳香族烴改性環氧樹脂、脂環型環氧樹脂等。其中，亦可為聯苯型環氧樹脂。 該等環氧樹脂可使用1種，亦可混合使用2種以上。[(A) epoxy resin] As for the epoxy resin of component (A) used in this embodiment, as long as it has two or more epoxy groups in one molecule, it can be widely used for electronic parts without limitation of molecular structure and molecular weight. sealing material. Examples of the epoxy resin of the component (A) include biphenyl epoxy resins, cresol novolak epoxy resins, phenol novolak epoxy resins, bisphenol A epoxy resins, bisphenol F-type epoxy resin, bisphenol S-type epoxy resin, dicyclopentadiene-type epoxy resin, trisphenolmethane-type epoxy resin, epoxy resin containing three thionuclei and other heterocyclic epoxy resins, stilbene-type Difunctional epoxy resin, naphthalene epoxy resin, condensed ring aromatic hydrocarbon modified epoxy resin, alicyclic epoxy resin, etc. Among them, a biphenyl type epoxy resin may also be used. These epoxy resins may be used alone or in combination of two or more.
就密封用樹脂組合物之處理性、及成形時之熔融黏度之觀點而言，(A)成分之環氧樹脂之軟化點可為40~130℃，亦可為50~110℃。 再者，本說明中之軟化點係指「環球法軟化點」，且係依據ASTMD36所測得之值。The softening point of the epoxy resin of component (A) may be 40-130°C or 50-110°C from the viewpoint of properties of the sealing resin composition and melt viscosity during molding. Furthermore, the softening point in this description refers to the "ring and ball softening point", and is a value measured in accordance with ASTM D36.
若例示(A)成分之環氧樹脂之市售品，則例如可列舉：三菱化學(股)製造之YX-4000(環氧當量185、軟化點105℃)、三菱化學(股)製造之YX-4000H(環氧當量193、軟化點105℃)、日本化藥(股)製造之NC-3000(環氧當量273、軟化點58℃)、日本化藥(股)製造之NC-3000H(環氧當量288、軟化點91℃)(以上均為商品名)等。Examples of commercially available epoxy resins of the component (A) include YX-4000 (epoxy equivalent 185, softening point 105°C) manufactured by Mitsubishi Chemical Co., Ltd., and YX manufactured by Mitsubishi Chemical Co., Ltd. -4000H (epoxy equivalent 193, softening point 105°C), Nippon Kayaku NC-3000 (epoxy equivalent 273, softening point 58°C), Nippon Kayaku NC-3000H (environment Oxygen equivalent 288, softening point 91°C) (the above are all trade names), etc.
[(B)酚樹脂硬化劑] 本實施形態中所使用之(B)成分之酚樹脂硬化劑係每1分子具有2個以上酚性羥基，可使上述(A)成分之環氧樹脂硬化者。只要為一般用作電子零件之密封材料者，則可無特別限制地使用。 作為(B)成分之酚樹脂硬化劑，具體而言，可列舉：使苯酚、烷酚等酚類與甲醛或多聚甲醛反應所獲得之酚系酚醛清漆樹脂或甲酚酚醛清漆樹脂等酚醛清漆型酚樹脂、使該等酚醛清漆型酚樹脂環氧化或丁基化而成之改性酚醛清漆型酚樹脂、二環戊二烯改性酚樹脂、對二甲苯改性酚樹脂、苯酚芳烷基樹脂、聯苯芳烷基樹脂、萘酚芳烷基樹脂、三苯酚烷烴型酚樹脂、多官能型酚樹脂等。其中，較佳為苯酚芳烷基樹脂、酚系酚醛清漆樹脂、聯苯芳烷基樹脂。該等酚樹脂硬化劑可使用1種，亦可混合使用2種以上。[(B) Phenolic resin hardener] The phenolic resin hardening agent of (B) component used in this embodiment has 2 or more phenolic hydroxyl groups per 1 molecule, and can harden the epoxy resin of the said (A) component. Any material that is generally used as a sealing material for electronic parts can be used without any particular limitation. Specific examples of the phenolic resin hardener for component (B) include novolacs such as phenolic novolac resins obtained by reacting phenols such as phenols and alkanols with formaldehyde or paraformaldehyde, or cresol novolak resins. Novolak-type phenol resins, modified novolak-type phenol resins obtained by epoxidizing or butylated novolac-type phenol resins, dicyclopentadiene-modified phenol resins, p-xylene-modified phenol resins, phenol arane Base resins, biphenyl aralkyl resins, naphthol aralkyl resins, trisphenol alkane type phenol resins, multifunctional phenol resins, etc. Among them, phenol aralkyl resins, phenolic novolak resins, and biphenyl aralkyl resins are preferable. These phenol resin curing agents may be used alone or in combination of two or more.
關於(B)成分之酚樹脂硬化劑之含量，可為(B)成分之酚樹脂硬化劑具有之酚性羥基數(b)相對於上述(A)成分之環氧樹脂具有之環氧基數(a)的比(b)/(a)成為0.3以上1.5以下之範圍，亦可為成為0.5以上1.2以下之範圍。若比(b)/(a)為0.3以上，則硬化物之耐濕可靠性提昇，若為1.5以下，則硬化物之強度提昇。Regarding the content of the phenolic resin hardener of the (B) component, the number of phenolic hydroxyl groups (b) that the phenolic resin hardener of the (B) component has can be compared to the epoxy group number (b) that the epoxy resin of the above-mentioned (A) component has ( The ratio (b)/(a) of a) may be in the range of 0.3 to 1.5, and may be in the range of 0.5 to 1.2. When the ratio (b)/(a) is 0.3 or more, the moisture resistance reliability of the cured product is improved, and when it is 1.5 or less, the strength of the cured product is improved.
又，密封用樹脂組合物中之(A)成分之環氧樹脂及(B)成分之酚樹脂硬化劑之合計含量可為5~20質量%，亦可為10~15質量%。Moreover, the total content of the epoxy resin of (A) component and the phenolic resin hardening agent of (B) component in the sealing resin composition may be 5-20 mass %, and may be 10-15 mass %.
[(C)硬化促進劑] 本實施形態中所使用之(C)成分之硬化促進劑係促進(A)成分之環氧樹脂與(B)成分之酚樹脂硬化劑之硬化反應的成分。(C)成分之硬化促進劑只要為發揮上述作用者則無特別限制，可使用公知之硬化促進劑。[(C) hardening accelerator] The hardening accelerator of (C) component used in this embodiment is a component which accelerates the hardening reaction of the epoxy resin of (A) component, and the phenol resin hardening agent of (B) component. (C) The hardening accelerator of component will not be specifically limited if it exhibits the said effect|action, A well-known hardening accelerator can be used.
作為(C)成分之硬化促進劑，具體而言，可列舉：2-甲基咪唑、2-乙基咪唑、2-異丙基咪唑、2-十一烷基咪唑、1,2-二甲基咪唑、2,4-二甲基咪唑、2-苯基咪唑、2-苯基-4-甲基咪唑、4-甲基咪唑、4-乙基咪唑、2-苯基-4-羥基甲基咪唑、2-乙基-4-甲基咪唑、1-氰乙基-2-甲基咪唑、2-苯基-4-甲基-5-羥基甲基咪唑、2-苯基-4,5-二羥基甲基咪唑、1-苄基-2-甲基咪唑、1-苄基-2-苯基咪唑、1-氰乙基-2-乙基-4-甲基咪唑、1-氰乙基-2-十一烷基咪唑、1-氰乙基-2-苯基咪唑等咪唑類；1,8-二氮雜雙環[5.4.0]十一烯-7(DBU)、1,5-二氮雜雙環[4.3.0]壬烯、5,6-二丁基胺基-1,8-二氮雜雙環[5.4.0]十一烯-7等二氮雜雙環化合物及其等之鹽；三乙胺、三伸乙基二胺、苄基二甲胺、α-甲基苄基二甲胺、三乙醇胺、二甲基胺基乙醇、三(二甲胺基甲基)酚等三級胺類；三甲基膦、三乙基膦、三丁基膦、二苯基膦、三苯基膦、三(對甲基苯基)膦、三(壬基苯基)膦、甲基二苯基膦、二丁基苯基膦、三環己基膦、雙(二苯基膦)甲烷、1,2-雙(二苯基膦)乙烷等有機膦化合物等。其等之中，就流動性及成形性良好之觀點而言，可為咪唑類。該等硬化促進劑可使用1種，亦可混合使用2種以上。As the hardening accelerator of component (C), specific examples include: 2-methylimidazole, 2-ethylimidazole, 2-isopropylimidazole, 2-undecylimidazole, 1,2-dimethylimidazole Imidazole, 2,4-dimethylimidazole, 2-phenylimidazole, 2-phenyl-4-methylimidazole, 4-methylimidazole, 4-ethylimidazole, 2-phenyl-4-hydroxymethyl Imidazole, 2-ethyl-4-methylimidazole, 1-cyanoethyl-2-methylimidazole, 2-phenyl-4-methyl-5-hydroxymethylimidazole, 2-phenyl-4, 5-dihydroxymethylimidazole, 1-benzyl-2-methylimidazole, 1-benzyl-2-phenylimidazole, 1-cyanoethyl-2-ethyl-4-methylimidazole, 1-cyano Imidazoles such as ethyl-2-undecylimidazole, 1-cyanoethyl-2-phenylimidazole, etc.; 1,8-diazabicyclo[5.4.0]undecene-7(DBU), 1, 5-diazabicyclo[4.3.0]nonene, 5,6-dibutylamino-1,8-diazabicyclo[5.4.0]undecene-7 and other diazabicyclo compounds and their Salts such as; triethylamine, triethylenediamine, benzyldimethylamine, α-methylbenzyldimethylamine, triethanolamine, dimethylaminoethanol, tris(dimethylaminomethyl) Tertiary amines such as phenol; trimethylphosphine, triethylphosphine, tributylphosphine, diphenylphosphine, triphenylphosphine, tri(p-methylphenyl)phosphine, tri(nonylphenyl)phosphine , Methyldiphenylphosphine, dibutylphenylphosphine, tricyclohexylphosphine, bis(diphenylphosphine)methane, 1,2-bis(diphenylphosphine)ethane and other organic phosphine compounds. Among them, imidazoles are used from the viewpoint of good fluidity and formability. These curing accelerators may be used alone or in combination of two or more.
相對於密封用樹脂組合物總量，(C)成分之硬化促進劑之含量可為0.1~5質量%之範圍，亦可為0.1~1質量%之範圍。若(C)成分之硬化促進劑之含量為0.1質量%以上，則獲得硬化性之促進效果，若為5質量%以下，則可抑制成形時導線之變形及破損，使填充性變良好。The content of the hardening accelerator of the component (C) may be in the range of 0.1 to 5% by mass, or may be in the range of 0.1 to 1% by mass with respect to the total amount of the resin composition for sealing. When the content of the hardening accelerator of component (C) is 0.1% by mass or more, the effect of accelerating hardenability can be obtained, and if it is less than 5% by mass, deformation and damage of the lead wire during molding can be suppressed, and the filling property can be improved.
[(D)無機填充材] 本實施形態中所使用之(D)成分之無機填充材只要為此種樹脂組合物一般所使用之公知無機填充材，則可無特別限制地使用。 作為(D)成分之無機填充材，例如可列舉：熔融氧化矽、結晶氧化矽、破碎氧化矽、合成氧化矽、氧化鋁、氧化鈦、氧化鎂等氧化物粉末；氫氧化鋁、氫氧化鎂等氫氧化物粉末；氮化硼、氮化鋁、氮化矽等氮化物粉末等。該等無機填充材可使用1種，亦可混合使用2種以上。[(D) Inorganic filler] The inorganic filler of component (D) used in this embodiment can be used without particular limitation as long as it is a well-known inorganic filler generally used for this kind of resin composition. Examples of inorganic fillers for component (D) include oxide powders such as fused silica, crystalline silica, crushed silica, synthetic silica, alumina, titanium oxide, and magnesium oxide; aluminum hydroxide, magnesium hydroxide Such as hydroxide powder; nitride powder such as boron nitride, aluminum nitride, silicon nitride, etc. These inorganic fillers may be used alone or in combination of two or more.
就提高本實施形態之密封用樹脂組合物之操作性及成形性之觀點而言，(D)成分之無機填充材可為上述例示中之氧化矽粉末，可為熔融氧化矽，亦可為球狀熔融氧化矽。又，亦可併用熔融氧化矽與除熔融氧化矽以外之氧化矽，於該情形時，除熔融氧化矽以外之氧化矽之比率可設為未達氧化矽粉末整體之30質量%。From the viewpoint of improving the workability and formability of the sealing resin composition of this embodiment, the inorganic filler of component (D) may be silicon oxide powder as exemplified above, may be fused silica, or may be spherical fused silica. Also, fused silica and silicon oxide other than fused silica may be used in combination, and in this case, the ratio of silicon oxide other than fused silica may be less than 30% by mass of the entire silicon oxide powder.
(D)成分之無機填充材之平均粒徑可為0.5~40 μm，可為1~30 μm，亦可為5~20 μm。又，(D)成分之無機填充材之最大粒徑可為55 μm以下。若平均粒徑為0.5 μm以上，則可提昇密封用樹脂組合物之流動性及成形性。另一方面，若平均粒徑為40 μm以下，則抑制使密封用樹脂組合物硬化所獲得之成形品之翹曲，可提昇尺寸精度。又，若最大粒徑為55 μm以下，則可提昇密封用樹脂組合物之成形性。 再者，於本說明中，(D)成分之無機填充材之平均粒徑例如可藉由雷射繞射式粒度分佈測定裝置而求出，平均粒徑為於利用雷射繞射式粒度分佈測定裝置所測得之粒度分佈中累計體積成為50%之粒徑(d50)。The average particle size of the inorganic filler of component (D) can be 0.5-40 μm, 1-30 μm, or 5-20 μm. Moreover, the maximum particle diameter of the inorganic filler of component (D) may be 55 micrometers or less. When the average particle diameter is 0.5 μm or more, the fluidity and formability of the sealing resin composition can be improved. On the other hand, if the average particle diameter is 40 μm or less, the warpage of the molded article obtained by curing the sealing resin composition can be suppressed, and the dimensional accuracy can be improved. Moreover, when the maximum particle diameter is 55 micrometers or less, the formability of the sealing resin composition can be improved. In addition, in this description, the average particle diameter of the inorganic filler of (D) component can be calculated|required by the laser diffraction particle size distribution measuring apparatus, for example, and the average particle diameter is obtained by using the laser diffraction particle size distribution The particle diameter (d50) at which the cumulative volume becomes 50% of the particle size distribution measured by the measuring device.
相對於密封用樹脂組合物總量，(D)成分之無機填充材之含量可為70~95質量%之範圍，亦可為75~90質量%之範圍。若(D)成分之無機填充材之含量為70質量%以上，則密封用樹脂組合物之線膨脹係數不會過度增大，而可提昇使該密封用樹脂組合物硬化所獲得之成形品之尺寸精度、耐濕性、機械強度等。又，若(D)成分之無機填充材之含量為95質量%以下，則可使將密封用樹脂組合物成形所獲得之樹脂片材不易破裂。又，密封用樹脂組合物之熔融黏度不會過度增大，而可提昇流動性及成形性。The content of the inorganic filler of component (D) may be in the range of 70 to 95% by mass, or may be in the range of 75 to 90% by mass with respect to the total amount of the resin composition for sealing. If the content of the inorganic filler of component (D) is 70% by mass or more, the linear expansion coefficient of the sealing resin composition will not increase excessively, and the molded product obtained by hardening the sealing resin composition can be improved. Dimensional accuracy, moisture resistance, mechanical strength, etc. Moreover, when content of the inorganic filler of (D)component is 95 mass % or less, the resin sheet obtained by molding the resin composition for sealing can be made hard to crack. Moreover, the melt viscosity of the sealing resin composition does not increase excessively, and fluidity and formability can be improved.
於本實施形態之密封用樹脂組合物中，除以上各成分以外，可於不阻礙本實施形態之效果之範圍內調配一般調配於此種樹脂組合物中之成分、例如偶合劑；合成蠟、天然蠟、高級脂肪酸、高級脂肪酸之金屬鹽等脫模劑；碳黑、鈷藍等著色劑；聚矽氧油、聚矽氧橡膠等低應力賦予劑；水滑石類；離子捕捉劑等。In the sealing resin composition of this embodiment, in addition to the above components, components generally formulated in such resin compositions, such as coupling agents; synthetic waxes, Natural waxes, higher fatty acids, metal salts of higher fatty acids and other mold release agents; carbon black, cobalt blue and other coloring agents; polysiloxane oil, polysiloxane rubber and other low stress imparting agents; hydrotalcites; ion traps, etc.
作為偶合劑，可使用環氧矽烷系、胺基矽烷系、脲基矽烷系、乙烯基矽烷系、烷基矽烷系、有機鈦酸酯系、醇化鋁系等偶合劑。該等偶合劑可使用1種，亦可混合使用2種以上。其中，就成形性、阻燃性、硬化性等觀點而言，較佳為胺基矽烷系偶合劑，尤佳為γ-胺基丙基三甲氧基矽烷、γ-胺基丙基三乙氧基矽烷、γ-胺基丙基甲基二甲氧基矽烷、γ-胺基丙基甲基二乙氧基矽烷、γ-苯基胺基丙基三甲氧基矽烷等。As the coupling agent, epoxysilane-based, aminosilane-based, ureidosilane-based, vinylsilane-based, alkylsilane-based, organic titanate-based, aluminum alcoholate-based and other coupling agents can be used. These coupling agents may be used alone or in combination of two or more. Among them, from the viewpoints of formability, flame retardancy, and curability, aminosilane-based coupling agents are preferred, and γ-aminopropyltrimethoxysilane, γ-aminopropyltriethoxysilane, and γ-aminopropyltriethoxysilane are particularly preferred. Silane, γ-aminopropylmethyldimethoxysilane, γ-aminopropylmethyldiethoxysilane, γ-phenylaminopropyltrimethoxysilane, etc.
相對於密封用樹脂組合物總量，偶合劑之含量可為0.01~3質量%之範圍，亦可為0.1~1質量%之範圍。若偶合劑之含量為0.01質量%以上，則可提昇密封用樹脂組合物之成形性，若為3質量%以下，則可於密封用樹脂組合物之成形時減少發泡，減少於成形品中產生空隙或表面鼓出等。The content of the coupling agent may be in the range of 0.01 to 3% by mass or in the range of 0.1 to 1% by mass relative to the total amount of the resin composition for sealing. If the content of the coupling agent is 0.01% by mass or more, the formability of the sealing resin composition can be improved, and if it is 3% by mass or less, foaming can be reduced during molding of the sealing resin composition, and it can be reduced in molded products Voids or surface bulges are generated.
就抑制黏連之觀點而言，本實施形態之密封用樹脂組合物亦可不包含溶劑。又，於該密封用樹脂組合物不包含溶劑之情形時，無於密封半導體元件時因溶劑殘留而導致可靠性降低之虞。From the viewpoint of suppressing blocking, the resin composition for sealing according to the present embodiment may not contain a solvent. Moreover, when this resin composition for encapsulation does not contain a solvent, there is no possibility that reliability may fall by a solvent remaining at the time of sealing a semiconductor element.
本實施形態之密封用樹脂組合物可藉由公知之密封用樹脂組合物之製造方法而獲得，例如可以如下方式進行製備。首先，藉由混合機等將上述(A)環氧樹脂、(B)酚樹脂硬化劑、(C)硬化促進劑、(D)無機填充材及上述視需要所調配之各種成分充分地混合(乾摻)後，藉由熱輥或捏合機等混練裝置進行熔融混練，於加壓構件之間進行壓縮而成形為片狀。更具體而言，一面使密封用樹脂組合物加熱軟化，一面藉由輥或熱壓機將其壓延至150~1000 μm之厚度。 再者，壓延密封用樹脂組合物時之加熱溫度通常為60~150℃左右。若加熱溫度為60℃以上，則變得易壓延，若為150℃以下，則硬化反應適度地進行，而可使成形性變良好。The sealing resin composition of this embodiment can be obtained by the manufacturing method of the well-known sealing resin composition, For example, it can prepare as follows. First, the above-mentioned (A) epoxy resin, (B) phenolic resin hardener, (C) hardening accelerator, (D) inorganic filler, and the above-mentioned various components prepared as necessary are fully mixed by a mixer or the like ( After dry blending), it is melt-kneaded by a kneading device such as a hot roll or a kneader, and compressed between pressing members to form a sheet. More specifically, while heating and softening the sealing resin composition, it is rolled to a thickness of 150 to 1000 μm with a roll or a heat press. In addition, the heating temperature at the time of calendering the sealing resin composition is about 60-150 degreeC normally. When the heating temperature is 60° C. or higher, it becomes easy to roll, and when it is 150° C. or lower, the curing reaction proceeds moderately, and formability can be improved.
其次，將所獲得之片材冷卻之後，粉碎為適當大小。 片材之厚度為150~1000 μm，可為150~700 μm，可為150~500 μm，亦可為200~400 μm。若片材之厚度為上述範圍內，則藉由粉碎該片材，可獲得上述具有特定形狀之片狀密封用樹脂組合物。又，於粉碎該片材時，藉由使用JIS標準篩(JIS Z8801-1：2006規定)之分級，可使會通過標稱網眼150 μm之篩之細粉難以產生。可將本實施形態之片狀密封用樹脂組合物中所包含之上述密封用樹脂組合物a減少至5質量%以下。 再者，關於上述片材之厚度，例如可使用測微計測定該片材之厚度50處，以其等之平均值之形式求出。Next, after cooling the obtained sheet, it is pulverized into an appropriate size. The thickness of the sheet is 150-1000 μm, 150-700 μm, 150-500 μm, or 200-400 μm. If the thickness of the sheet is within the above range, the sheet-shaped sealing resin composition having the above-mentioned specific shape can be obtained by pulverizing the sheet. In addition, when the sheet is crushed, by classifying using a JIS standard sieve (specified in JIS Z8801-1:2006), it is difficult to generate fine powder that would pass through a sieve with a nominal mesh size of 150 μm. The said sealing resin composition a contained in the sheet-shaped sealing resin composition of this embodiment can be reduced to 5 mass % or less. In addition, about the thickness of the said sheet|seat, the thickness of the said sheet|seat is measured, for example using a micrometer at 50 places, and it can obtain|require as the average value of these.
粉碎方法並無特別限制，可使用一般之粉碎機，例如快速磨機(Speed Mill)、切割粉碎機(Cutting mill)、球磨機、旋風分離磨機、錘磨機、振磨機、切碎機、磨床磨機(Grinder Mill)等。其中，尤其可使用快速磨機。 又，亦可使用擠出機將密封用樹脂組合物成形為扁平繩狀，並藉由利用切割機等切斷為特定長度之熱切割法進行粉碎。 粉碎物可於之後藉由篩選分級或空氣分級等而製成具有特定之粒度分佈之片狀集合體，使特性齊備化地予以製備。The pulverization method is not particularly limited, and general pulverizers such as Speed Mill, Cutting Mill, Ball Mill, Cyclone Mill, Hammer Mill, Vibration Mill, Chopper, Grinder Mill etc. Among these, especially fast mills can be used. Moreover, you may shape|mold the resin composition for sealing into a flat rope shape using an extruder, and grind|pulverize by the thermal cutting method of cutting into predetermined length with a cutter etc. also. The pulverized product can then be made into sheet-like aggregates with a specific particle size distribution by screening classification or air classification, so that the properties can be fully prepared.
以此方式獲得之片狀密封用樹脂組合物可使下述式(1)所表示之間隙率為60%以下、50%以下、40%以下。 間隙率(%)={1-(樹脂供給面積/模腔面積)}×100 式(1) 此處，間隙率表示將密封用樹脂組合物供給至模腔內時未由該密封用樹脂組合物被覆之面積比率。模腔面積為成形模具之底部之有效面積，樹脂供給面積表示由密封用樹脂組合物被覆之面積。 若上述間隙率為60%以下，則密封用樹脂組合物之溶解性變得良好，填充性提昇而可減少於硬化物中產生空隙等。而且，可充分地減少導線偏移。The sheet-shaped sealing resin composition obtained in this way can have a gap ratio represented by the following formula (1) of 60% or less, 50% or less, and 40% or less. Gap ratio (%)={1-(resin supply area/cavity area)}×100 Formula (1) Here, the void ratio means the ratio of the area not covered with the resin composition for sealing when the resin composition for sealing is supplied into the cavity. The cavity area is the effective area of the bottom of the molding die, and the resin supply area is the area covered with the sealing resin composition. When the said void ratio is 60% or less, the solubility of the resin composition for sealing becomes favorable, and filling property improves, and generation|occurrence|production of voids etc. in hardened|cured material can be reduced. Also, wire deviation can be substantially reduced.
[半導體裝置] 本實施形態之半導體裝置可藉由使用上述片狀密封用樹脂組合物並利用壓縮成形密封半導體元件而製造。以下對該方法之一例進行說明。 首先，將安裝有半導體元件之基板供給至壓縮成形用模具之上模後，將上述密封用樹脂組合物供給至下模之模腔內。其次，以所需之鎖模壓力對上模及下模進行鎖模，於下模模腔中將半導體元件浸漬於加熱熔融之密封用樹脂組合物中。其次，利用模腔底面構件按壓下模模腔內之加熱熔融之密封用樹脂組合物，於減壓下施加所需之壓力而進行壓縮成形。成形條件可設為溫度120℃以上200℃以下、壓力2 MPa以上20 MPa以下。[semiconductor device] The semiconductor device of this embodiment can be manufactured by sealing a semiconductor element by compression molding using the above-mentioned sheet-shaped resin composition for sealing. An example of this method will be described below. First, after supplying the board|substrate mounted with the semiconductor element to the upper mold of the mold for compression molding, the said sealing resin composition is supplied into the cavity of the lower mold. Next, the upper mold and the lower mold are clamped with the required clamping pressure, and the semiconductor element is immersed in the heated and melted sealing resin composition in the cavity of the lower mold. Next, the heated and melted sealing resin composition in the cavity of the lower mold is pressed by the bottom surface member of the cavity, and the required pressure is applied under reduced pressure to carry out compression molding. The molding conditions can be set at a temperature of 120°C to 200°C, and a pressure of 2 MPa to 20 MPa.
圖1係表示以此方式獲得之本發明之半導體裝置之一例者，亦可於銅框架等引線框架1與半導體元件2之間介存接著劑層3。又，半導體元件2上之電極4與引線框架1之引線部5藉由接合線6而連接，進而藉由本發明之密封用樹脂組合物之硬化物(密封樹脂)7而密封其等。FIG. 1 shows an example of the semiconductor device of the present invention obtained in this way, and an
本實施形態之半導體裝置由於藉由上述具有特定形狀之密封用樹脂組合物而密封半導體元件，故減少於成形時產生導線偏移等。又，成形性亦提昇，能夠製成具有高可靠性之半導體裝置。 又，若使用上述具有特定形狀之密封用樹脂組合物，則可將半導體裝置之半導體元件上之密封材料之厚度設為200 μm以下，可設為150 μm以下，亦可設為100 μm以下。In the semiconductor device of the present embodiment, since the semiconductor element is sealed by the sealing resin composition having the above-mentioned specific shape, the occurrence of misalignment of leads during molding is reduced. In addition, formability is also improved, and a highly reliable semiconductor device can be produced. Also, if the sealing resin composition having a specific shape is used, the thickness of the sealing material on the semiconductor element of the semiconductor device can be set to 200 μm or less, 150 μm or less, or 100 μm or less.
進而，於使用上述具有特定形狀者作為密封用樹脂組合物之情形時，減少了所謂「樹脂洩漏」，即，將密封用樹脂組合物供給至下模之模腔時之飛散或於減壓下加熱熔融之樹脂飛散，故可獲得具有高可靠性之半導體裝置。Furthermore, in the case of using the resin composition having the above-mentioned specific shape as the resin composition for sealing, the so-called "resin leakage", that is, the scattering when the resin composition for sealing is supplied to the cavity of the lower mold or the leakage under reduced pressure is reduced. The heated and melted resin scatters, so a semiconductor device with high reliability can be obtained.
再者，於本發明之半導體裝置中得到密封之半導體元件並無特別限制，例如例示：IC、LSI、二極體、閘流體、電晶體等。本發明係於密封後之厚度為0.1 mm以上1.5 mm以下之易產生導線偏移之半導體裝置之情形時有用。 [實施例]Furthermore, the semiconductor element to be sealed in the semiconductor device of the present invention is not particularly limited, and examples thereof include IC, LSI, diodes, thyristors, and transistors. The present invention is useful in the case of a semiconductor device whose thickness after sealing is from 0.1 mm to 1.5 mm and which tends to cause wire deviation. [Example]
其次，藉由實施例具體地說明本發明，但本發明並不受該等例任何限定。再者，表1中，空欄表示無調配。Next, the present invention will be specifically described by way of examples, but the present invention is not limited by these examples. In addition, in Table 1, a blank column represents no preparation.
(實施例1~7、及比較例1~4) 使用混合機將表1中記載之種類及調配量之各成分於常溫(25℃)下進行混合，其次，使用熱輥於80~130℃下加熱混練。於樹脂溫度60~110℃下，使用輥進行壓延並冷卻，獲得表1所示之厚度之片材。 使用快速磨機粉碎所獲得之片材，使用3種(網眼150 μm、1 mm、2 mm)JIS標準篩(JIS Z8801-1：2006規定)來製備密封用樹脂組合物。 進而，使用所獲得之密封用樹脂組合物進行半導體晶片之密封。即，使用密封用樹脂組合物於模具溫度175℃、成形壓力8.0 MPa、硬化時間2分鐘之條件下將50 mm×50 mm×0.54 mm之FBGA(Fine pitch Ball Grid Array)壓縮成形之後，於175℃下進行4小時之後硬化，製造半導體裝置。(Examples 1-7, and Comparative Examples 1-4) Mix each component of the type and amount listed in Table 1 at room temperature (25°C) using a mixer, and then heat and knead at 80 to 130°C using a hot roller. At a resin temperature of 60-110°C, rolls were used for rolling and cooling to obtain sheets with thicknesses shown in Table 1. The obtained sheet was pulverized using a rapid mill, and three types of (mesh 150 μm, 1 mm, 2 mm) JIS standard sieves (specified in JIS Z8801-1:2006) were used to prepare a resin composition for sealing. Furthermore, sealing of a semiconductor wafer was performed using the obtained resin composition for sealing. That is, after compression-molding a FBGA (Fine pitch Ball Grid Array) of 50 mm × 50 mm × 0.54 mm under the conditions of a mold temperature of 175°C, a molding pressure of 8.0 MPa, and a curing time of 2 minutes using the resin composition for sealing, it was molded at 175 After 4 hours at ℃, it is hardened to manufacture a semiconductor device.
[粉碎前之片材之厚度(dave. )、最大厚度(dmax )、最小厚度(dmin )之測定] 使用測微計測定所獲得之片材之厚度50處，求出最大厚度(dmax )、最小厚度(dmin )，進而，將所測得之50處之平均值作為片材之厚度(dave. )。 又，算出片材之最大厚度(dmax )與最小厚度(dmin )之差相對於該片材之厚度(dave. )的比率。[Measurement of thickness (d ave. ), maximum thickness (d max ), and minimum thickness (d min ) of the sheet before pulverization] The thickness of the obtained sheet was measured at 50 points using a micrometer, and the maximum thickness ( d max ), the minimum thickness (d min ), and the average value of the measured 50 places is taken as the thickness of the sheet (d ave. ). Also, the ratio of the difference between the maximum thickness (d max ) and the minimum thickness (d min ) of the sheet to the thickness (d ave. ) of the sheet was calculated.
[密封用樹脂組合物之厚度之測定] 使用光學顯微鏡(倍率：200倍)測定所獲得之密封用樹脂組合物之厚度50處，將所測得之50處之平均值作為密封用樹脂組合物之厚度。 又，藉由光學顯微鏡(倍率：200倍)觀察實施例1~7、及比較例1、4中所獲得之密封用樹脂組合物50個，結果確認到均於厚度方向上斷裂，該密封用樹脂組合物之80質量%以上具有平行之一對平面且該一對平面間之距離(厚度)為150~1000 μm之範圍內。[Measurement of thickness of resin composition for sealing] The thickness of the obtained resin composition for sealing was measured at 50 places using an optical microscope (magnification: 200 times), and the average value of the measured 50 places was taken as the thickness of the resin composition for sealing. In addition, 50 resin compositions for sealing obtained in Examples 1 to 7 and Comparative Examples 1 and 4 were observed with an optical microscope (magnification: 200 times). As a result, it was confirmed that they were all fractured in the thickness direction. More than 80% by mass of the resin composition has a pair of parallel planes and the distance (thickness) between the pair of planes is within the range of 150 to 1000 μm.
密封用樹脂組合物之製備中所使用之表1所記載之各成分之詳情如下。The details of each component described in Table 1 used in the preparation of the resin composition for sealing are as follows.
(A)環氧樹脂 ・環氧樹脂1：NC-3000(日本化藥(股)製造，商品名；環氧當量：273，軟化點：58℃) ・環氧樹脂2：YX-4000H(三菱化學(股)製造，商品名；環氧當量：193，軟化點：105℃)(A) epoxy resin ・Epoxy resin 1: NC-3000 (manufactured by Nippon Kayaku Co., Ltd., trade name; epoxy equivalent: 273, softening point: 58°C) ・Epoxy resin 2: YX-4000H (manufactured by Mitsubishi Chemical Co., Ltd., brand name; epoxy equivalent: 193, softening point: 105°C)
(B)酚樹脂硬化劑 ・酚樹脂1：MEH-7800M(明和化成(股)製造，商品名；羥基當量：175) ・酚樹脂2：BRG-557(昭和電工(股)製造，商品名；羥基當量：104)(B) Phenolic resin hardener ・Phenol resin 1: MEH-7800M (manufactured by Meiwa Chemical Co., Ltd., trade name; hydroxyl equivalent: 175) ・Phenol resin 2: BRG-557 (manufactured by Showa Denko Co., Ltd., trade name; hydroxyl equivalent: 104)
(C)硬化促進劑 ・咪唑：2P4MHZ(四國化成(股)製造，商品名)(C) hardening accelerator ・Imidazole: 2P4MHZ (manufactured by Shikoku Chemical Co., Ltd., brand name)
(D)無機填充材 ・熔融氧化矽1：MSR-8030(龍森(股)製造，商品名；平均粒徑：12 μm) ・熔融氧化矽2：SC-4500SQ(Admatechs(股)製造，商品名；平均粒徑：1 μm)(D) Inorganic filler ・Fused silica 1: MSR-8030 (manufactured by Ronsen Co., Ltd., trade name; average particle diameter: 12 μm) ・Fused silica 2: SC-4500SQ (manufactured by Admatechs Co., Ltd., trade name; average particle diameter: 1 μm)
(其他添加劑) ・矽烷偶合劑：Z-6883(東麗道康寧公司(股)製造，商品名；γ-苯基胺基丙基三甲氧基矽烷) ・著色劑：MA-600(三菱化學(股)製造，商品名；碳黑)(other additives) ・Silane coupling agent: Z-6883 (manufactured by Toray Dow Corning Co., Ltd., trade name; γ-phenylaminopropyltrimethoxysilane) ・Coloring agent: MA-600 (manufactured by Mitsubishi Chemical Co., Ltd., brand name; carbon black)
又，針對上述各實施例及各比較例中所獲得之密封用樹脂組合物及半導體裝置(製品)，利用以下所示之方法評價各種特性。將其結果一併示於表1。Moreover, various characteristics were evaluated by the method shown below about the sealing resin composition and semiconductor device (product) obtained in each said Example and each comparative example. The results are shown in Table 1 together.
＜評價項目＞ (密封用樹脂組合物) (1)螺旋流動 使用依據EMMI規格之模具，於溫度175℃、壓力9.8 MPa下進行轉移成形並測定。＜Evaluation items＞ (resin composition for sealing) (1) spiral flow Using a mold conforming to EMMI specifications, transfer molding was performed at a temperature of 175°C and a pressure of 9.8 MPa, and the measurement was performed.
(2)凝膠時間 依據JIS C 2161(2010)之7.5.1所規定之凝膠化時間A法，將約1 g之密封用樹脂組合物塗佈於175℃之熱板上，利用攪拌棒進行攪拌，測定成為凝膠狀而變得無法攪拌之前之時間。(2) Gel time According to the gelation time A method specified in 7.5.1 of JIS C 2161 (2010), apply about 1 g of the sealing resin composition on a hot plate at 175°C, stir with a stirring bar, and measure the gelation time. The time before it becomes gelatinous and cannot be stirred.
(成形性) (1)間隙率 使用TOWA(股)製造之壓縮成形機PMC1040-D，將實施例及比較例之片狀或粉粒狀之密封用樹脂組合物3 g(相當於密封後元件上之樹脂厚度100 μm)以0.3 g/s之速度供給至66 mm×232 mm之模腔內，自上部朝向模腔底面利用數位相機拍攝密封用樹脂組合物表面而進行圖像化。使所獲得之圖像二值化，測量密封用樹脂組合物之面積，藉由下述式(1)算出間隙率。 間隙率(%)=(1-(樹脂供給面積/模腔面積))×100 式(1) 此處，間隙率表示將密封用樹脂組合物供給至模腔內時未由該密封用樹脂組合物被覆之面積比率，模腔面積為成形模具之底部之有效面積，樹脂供給面積表示由密封用樹脂組合物被覆之面積。 再者，將算出實施例1之間隙率時之二值化圖像示於圖2，將算出比較例3之間隙率時之二值化圖像示於圖3。(formability) (1) Gap ratio Using the compression molding machine PMC1040-D manufactured by TOWA Co., Ltd., 3 g of the sheet-like or powder-like sealing resin composition (equivalent to the resin thickness of 100 μm on the sealed element) of the examples and comparative examples was added at 0.3 The speed of g/s was supplied into the mold cavity of 66 mm×232 mm, and the surface of the resin composition for sealing was photographed with a digital camera from the top toward the bottom surface of the mold cavity to make an image. The obtained image was binarized, the area of the sealing resin composition was measured, and the void ratio was calculated from the following formula (1). Gap ratio (%)=(1-(resin supply area/cavity area))×100 Formula (1) Here, the void ratio means the ratio of the area not covered by the sealing resin composition when the sealing resin composition is supplied into the cavity, the cavity area means the effective area of the bottom of the molding die, and the resin supply area means the ratio of the area covered by the sealing resin composition. The area covered by the resin composition. In addition, the binarized image at the time of calculating the gap ratio of Example 1 is shown in FIG. 2, and the binarized image at the time of calculating the gap ratio of Comparative Example 3 is shown in FIG.
(2)填充性
使用TOWA(股)製造之壓縮成形機PMC1040-D，將實施例及比較例之片狀或粉粒狀之密封用樹脂組合物3 g(相當於密封後元件上之樹脂厚度100 μm)以0.3g/s之速度供給至66 mm×232 mm之模腔內，於模具溫度175℃、成形壓力5.0 MPa、硬化時間2分鐘之條件下進行壓縮成形之後，以目視確認所獲得之成形品未填充之有無。將無未填充部分者評價為「良好」，將有未填充部分者評價為「未填充」。(2) filling
Using the compression molding machine PMC1040-D manufactured by TOWA Co., Ltd., 3 g of the sheet-like or powder-like sealing resin composition (equivalent to the resin thickness of 100 μm on the sealed element) of the examples and comparative examples was added at 0.3 The speed of g/s is supplied into the mold cavity of 66 mm×232 mm. After compression molding is carried out under the conditions of mold temperature 175°C, molding pressure 5.0 MPa, and curing
(3)空隙
使用TOWA(股)製造之壓縮成形機PMC1040-D，將實施例及比較例之片狀或粉粒狀之密封用樹脂組合物3 g(相當於密封後元件上之樹脂厚度100 μm)以0.3g/s之速度供給至66 mm×232 mm之模腔內，於模具溫度175℃、成形壓力5.0 MPa、硬化時間2分鐘之條件下進行壓縮成形，獲得成形品。利用超音波探傷裝置(Hitachi Kenki FineTech(股)製造之FS300II)觀察所獲得之成形品之空隙，藉由下述之標準進行評價。
A：無空隙之產生
B：空隙之個數未達5個
C：空隙之個數為5個以上(3) Gap
Using the compression molding machine PMC1040-D manufactured by TOWA Co., Ltd., 3 g of the sheet-like or powder-like sealing resin composition (equivalent to the resin thickness of 100 μm on the sealed element) of the examples and comparative examples was added at 0.3 The speed of g/s is fed into the mold cavity of 66 mm×232 mm, and compression molding is carried out under the conditions of mold temperature 175 ℃, molding pressure 5.0 MPa, and hardening
(4)導線偏移率
使用密封用樹脂組合物，於模具溫度175℃、成形壓力8.0 MPa、硬化時間2分鐘之條件下將50 mm×50 mm×0.54 mm之FBGA壓縮成形之後，利用X射線觀察裝置(島津製作所(股)製造，SMX-1000)觀察所獲得之成形品(FBGA)內部之金屬導線(直徑18 μm、長度5 mm)，求出最大變形部之導線偏移率(密封前之導線之位置與密封後之導線之位置之最大距離相對於導線長度之比率(%))。(4) wire offset rate
Using the resin composition for sealing, under the conditions of mold temperature 175°C, molding pressure 8.0 MPa, and hardening
(半導體裝置(製品)) (1)耐回焊性(MSL試驗) 對於半導體裝置，以85℃、85%RH進行72小時吸濕處理之後，於260℃之紅外線回焊爐中進行90秒鐘加熱之試驗(MSL試驗：Level 3)，調查不良(剝離及龜裂)之產生率(試樣數=20)。(semiconductor device (product)) (1) Reflow resistance (MSL test) For semiconductor devices, after 72 hours of moisture absorption treatment at 85°C and 85%RH, a 90-second heating test (MSL test: Level 3) in an infrared reflow furnace at 260°C was performed to investigate defects (peeling and cracking) ) of the production rate (number of samples = 20).
(2)耐濕可靠性(壓力鍋試驗：PCT) 使半導體裝置於壓力鍋內於127℃、0.25 MPa之條件下進行72小時吸水之後，進行260℃、90秒鐘之蒸氣回焊，調查不良(開路不良)之產生率(試樣數=20)。(2) Moisture resistance reliability (Pressure cooker test: PCT) After absorbing water in the pressure cooker at 127°C and 0.25 MPa for 72 hours, the semiconductor device was subjected to steam reflow at 260°C for 90 seconds to investigate the occurrence rate of failure (open circuit failure) (number of samples = 20).
(3)高溫放置可靠性(高度加速壽命試驗：HAST) 將半導體裝置於180℃之恆溫槽中放置1000小時，調查不良(開路不良)之產生率(試樣數=20)。(3) High temperature storage reliability (highly accelerated life test: HAST) The semiconductor device was placed in a constant temperature bath at 180°C for 1000 hours, and the occurrence rate of failure (open circuit failure) was investigated (number of samples = 20).
[表1]
據表1可知，本實施例之密封用樹脂組合物於成形時之填充性良好且導線偏移極低。雖於實施例與比較例中螺旋流動之值並無差異，但實施例之間隙率低於比較例。再者，於圖2中表示算出實施例1之間隙率時之二值化圖像，於圖3中表示算出比較例3之間隙率時之二值化圖像。圖2及圖3中，白色部分表示模腔內未由樹脂組合物被覆之部分，黒色部分表示模腔內由密封用樹脂組合物被覆之部分。據圖2及圖3可知，實施例1較比較例3，模腔內均勻地填充有密封用樹脂組合物，間隙率低。 本發明之密封用樹脂組合物由於為片狀，故可較薄且均勻地向模具內供給，因此壓縮成形時之樹脂流動變少，可獲得良好之填充性與較低之導線偏移率。 又，使用該密封用樹脂組合物所製造之半導體裝置於MSL試驗、壓力鍋試驗、高度加速壽命試驗之任一試驗中均獲得良好之結果，確認到具有作為樹脂密封型半導體裝置之較高可靠性。 [產業上之可利用性]It can be seen from Table 1 that the sealing resin composition of this embodiment has good filling property and extremely low wire deviation during molding. Although there is no difference in the value of the spiral flow between the Example and the Comparative Example, the gap ratio of the Example is lower than that of the Comparative Example. In addition, FIG. 2 shows a binarized image when the void ratio of Example 1 was calculated, and FIG. 3 shows a binarized image when the void ratio of Comparative Example 3 was calculated. In Fig. 2 and Fig. 3, the white part represents the part not covered with the resin composition in the cavity, and the black part represents the part covered with the resin composition for sealing in the cavity. According to FIG. 2 and FIG. 3 , compared with Comparative Example 3, the cavity of Example 1 is evenly filled with the resin composition for sealing, and the void ratio is lower. Since the resin composition for sealing of the present invention is in the form of a sheet, it can be supplied thinly and uniformly into the mold, so the flow of resin during compression molding is reduced, and good filling properties and low lead deviation rate can be obtained. In addition, the semiconductor device manufactured using the sealing resin composition obtained good results in any of the MSL test, pressure cooker test, and highly accelerated life test, and it was confirmed that it has high reliability as a resin-encapsulated semiconductor device. . [Industrial availability]
本發明之密封用樹脂組合物由於為片狀，故可較薄且均勻地朝模具內供給，因此成形性優異，並且成形時之導線偏移亦得到減少。因此，密封樹脂厚度較薄，又，作為藉由長且細之導線連接之半導體元件之密封材料有用，可製造可靠性較高之樹脂密封型半導體裝置。Since the resin composition for sealing of the present invention is in the form of a sheet, it can be supplied thinly and uniformly into a mold, so it has excellent moldability, and lead wire deviation during molding is also reduced. Therefore, the thickness of the sealing resin is thin, and it is useful as a sealing material for semiconductor elements connected by long and thin wires, and a highly reliable resin-sealed semiconductor device can be manufactured.
1:引線框架 2:半導體元件 3:接著劑層 4:電極 5:引線部 6:接合線 7:密封用樹脂組合物之硬化物(密封樹脂)1: Lead frame 2: Semiconductor components 3: Adhesive layer 4: electrode 5: Lead part 6: Bonding wire 7: Cured product of resin composition for sealing (sealing resin)
圖1係表示本發明之一實施形態之半導體裝置之剖視圖。 圖2係算出實施例1之間隙率時之二值化圖像。 圖3係算出比較例3之間隙率時之二值化圖像。FIG. 1 is a cross-sectional view showing a semiconductor device according to an embodiment of the present invention. FIG. 2 is a binarized image when calculating the gap ratio of Example 1. FIG. FIG. 3 is a binarized image when calculating the gap ratio of Comparative Example 3. FIG.
1:引線框架 1: Lead frame
2:半導體元件 2: Semiconductor components
3:接著劑層 3: Adhesive layer
4:電極 4: electrode
5:引線部 5: Lead part
6:接合線 6: Bonding wire
7:密封用樹脂組合物之硬化物(密封樹脂) 7: Cured product of resin composition for sealing (sealing resin)
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| JP4314539B2 (en) | 1999-04-13 | 2009-08-19 | 日立化成工業株式会社 | Method for producing granular epoxy resin encapsulant |
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| JP2006216899A (en) * | 2005-02-07 | 2006-08-17 | Kyocera Chemical Corp | Molding material for compression molding and resin-sealed semiconductor device |
| JP4855329B2 (en) | 2007-05-08 | 2012-01-18 | Ｔｏｗａ株式会社 | Electronic component compression molding method and apparatus |
| JP4973325B2 (en) | 2007-06-11 | 2012-07-11 | 住友ベークライト株式会社 | Manufacturing method of epoxy resin composition for semiconductor encapsulation and manufacturing method of semiconductor device |
| JP2011148959A (en) * | 2010-01-25 | 2011-08-04 | Kyocera Chemical Corp | Resin sheet for sealing semiconductor, and resin-sealed semiconductor device |
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| JP6321422B2 (en) | 2014-03-25 | 2018-05-09 | 京セラ株式会社 | Resin composition for sealing, method for producing the same, and resin-sealed semiconductor device |
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| WO2016030985A1 (en) | 2014-08-27 | 2016-03-03 | 積水化学工業株式会社 | White curable composition for photosemiconductor device, white tablet for photosemiconductor device, molding for photosemiconductor device, and photosemiconductor device |
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