JP7465714B2 - Epoxy resin composition for semiconductor encapsulation and semiconductor device - Google Patents
Epoxy resin composition for semiconductor encapsulation and semiconductor device Download PDFInfo
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- JP7465714B2 JP7465714B2 JP2020080428A JP2020080428A JP7465714B2 JP 7465714 B2 JP7465714 B2 JP 7465714B2 JP 2020080428 A JP2020080428 A JP 2020080428A JP 2020080428 A JP2020080428 A JP 2020080428A JP 7465714 B2 JP7465714 B2 JP 7465714B2
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- Prior art keywords
- epoxy resin
- resin composition
- semiconductor encapsulation
- semiconductor
- thermal conductivity
- Prior art date
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- 239000003822 epoxy resin Substances 0.000 title claims description 168
- 229920000647 polyepoxide Polymers 0.000 title claims description 168
- 239000004065 semiconductor Substances 0.000 title claims description 103
- 239000000203 mixture Substances 0.000 title claims description 80
- 238000005538 encapsulation Methods 0.000 title claims description 67
- 239000003795 chemical substances by application Substances 0.000 claims description 38
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 claims description 29
- 239000011256 inorganic filler Substances 0.000 claims description 28
- 229910003475 inorganic filler Inorganic materials 0.000 claims description 28
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 27
- 239000000460 chlorine Substances 0.000 claims description 27
- 229910052801 chlorine Inorganic materials 0.000 claims description 27
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical group C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 claims description 27
- 239000004305 biphenyl Substances 0.000 claims description 13
- 235000010290 biphenyl Nutrition 0.000 claims description 13
- 239000005011 phenolic resin Substances 0.000 claims description 12
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 claims description 11
- 229920001568 phenolic resin Polymers 0.000 claims description 11
- 150000001875 compounds Chemical class 0.000 claims description 10
- WBODDOZXDKQEFS-UHFFFAOYSA-N 1,2,3,4-tetramethyl-5-phenylbenzene Chemical group CC1=C(C)C(C)=CC(C=2C=CC=CC=2)=C1C WBODDOZXDKQEFS-UHFFFAOYSA-N 0.000 claims description 5
- 238000012545 processing Methods 0.000 claims description 4
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 45
- 238000000465 moulding Methods 0.000 description 27
- 238000012360 testing method Methods 0.000 description 15
- 239000000047 product Substances 0.000 description 14
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 13
- 239000000843 powder Substances 0.000 description 13
- 239000002245 particle Substances 0.000 description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 11
- 238000000034 method Methods 0.000 description 11
- 239000004593 Epoxy Substances 0.000 description 10
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 10
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 10
- 239000000126 substance Substances 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 8
- -1 imidazole compound Chemical class 0.000 description 8
- 229920003986 novolac Polymers 0.000 description 8
- 239000011342 resin composition Substances 0.000 description 8
- 239000000654 additive Substances 0.000 description 7
- 238000011156 evaluation Methods 0.000 description 7
- 239000003063 flame retardant Substances 0.000 description 7
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 7
- GYZLOYUZLJXAJU-UHFFFAOYSA-N diglycidyl ether Chemical compound C1OC1COCC1CO1 GYZLOYUZLJXAJU-UHFFFAOYSA-N 0.000 description 6
- 239000008393 encapsulating agent Substances 0.000 description 6
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 6
- 229930185605 Bisphenol Natural products 0.000 description 5
- BRLQWZUYTZBJKN-UHFFFAOYSA-N Epichlorohydrin Chemical compound ClCC1CO1 BRLQWZUYTZBJKN-UHFFFAOYSA-N 0.000 description 5
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 description 5
- 238000000748 compression moulding Methods 0.000 description 5
- 125000003700 epoxy group Chemical group 0.000 description 5
- 230000009477 glass transition Effects 0.000 description 5
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 238000012546 transfer Methods 0.000 description 5
- SRPWOOOHEPICQU-UHFFFAOYSA-N trimellitic anhydride Chemical compound OC(=O)C1=CC=C2C(=O)OC(=O)C2=C1 SRPWOOOHEPICQU-UHFFFAOYSA-N 0.000 description 5
- OUPZKGBUJRBPGC-UHFFFAOYSA-N 1,3,5-tris(oxiran-2-ylmethyl)-1,3,5-triazinane-2,4,6-trione Chemical compound O=C1N(CC2OC2)C(=O)N(CC2OC2)C(=O)N1CC1CO1 OUPZKGBUJRBPGC-UHFFFAOYSA-N 0.000 description 4
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 125000002723 alicyclic group Chemical group 0.000 description 4
- 239000007822 coupling agent Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- ZCUJYXPAKHMBAZ-UHFFFAOYSA-N 2-phenyl-1h-imidazole Chemical compound C1=CNC(C=2C=CC=CC=2)=N1 ZCUJYXPAKHMBAZ-UHFFFAOYSA-N 0.000 description 3
- VPWNQTHUCYMVMZ-UHFFFAOYSA-N 4,4'-sulfonyldiphenol Chemical class C1=CC(O)=CC=C1S(=O)(=O)C1=CC=C(O)C=C1 VPWNQTHUCYMVMZ-UHFFFAOYSA-N 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 125000000217 alkyl group Chemical group 0.000 description 3
- 150000001412 amines Chemical class 0.000 description 3
- 125000004432 carbon atom Chemical group C* 0.000 description 3
- 239000006229 carbon black Substances 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- 238000011049 filling Methods 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 3
- 125000000623 heterocyclic group Chemical group 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000011417 postcuring Methods 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 239000003566 sealing material Substances 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- 238000001721 transfer moulding Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- MUTGBJKUEZFXGO-OLQVQODUSA-N (3as,7ar)-3a,4,5,6,7,7a-hexahydro-2-benzofuran-1,3-dione Chemical compound C1CCC[C@@H]2C(=O)OC(=O)[C@@H]21 MUTGBJKUEZFXGO-OLQVQODUSA-N 0.000 description 2
- RUEBPOOTFCZRBC-UHFFFAOYSA-N (5-methyl-2-phenyl-1h-imidazol-4-yl)methanol Chemical compound OCC1=C(C)NC(C=2C=CC=CC=2)=N1 RUEBPOOTFCZRBC-UHFFFAOYSA-N 0.000 description 2
- RNFJDJUURJAICM-UHFFFAOYSA-N 2,2,4,4,6,6-hexaphenoxy-1,3,5-triaza-2$l^{5},4$l^{5},6$l^{5}-triphosphacyclohexa-1,3,5-triene Chemical compound N=1P(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP=1(OC=1C=CC=CC=1)OC1=CC=CC=C1 RNFJDJUURJAICM-UHFFFAOYSA-N 0.000 description 2
- LXBGSDVWAMZHDD-UHFFFAOYSA-N 2-methyl-1h-imidazole Chemical compound CC1=NC=CN1 LXBGSDVWAMZHDD-UHFFFAOYSA-N 0.000 description 2
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 2
- SESYNEDUKZDRJL-UHFFFAOYSA-N 3-(2-methylimidazol-1-yl)propanenitrile Chemical compound CC1=NC=CN1CCC#N SESYNEDUKZDRJL-UHFFFAOYSA-N 0.000 description 2
- XLSZMDLNRCVEIJ-UHFFFAOYSA-N 4-methylimidazole Chemical compound CC1=CNC=N1 XLSZMDLNRCVEIJ-UHFFFAOYSA-N 0.000 description 2
- ULKLGIFJWFIQFF-UHFFFAOYSA-N 5K8XI641G3 Chemical compound CCC1=NC=C(C)N1 ULKLGIFJWFIQFF-UHFFFAOYSA-N 0.000 description 2
- MWSKJDNQKGCKPA-UHFFFAOYSA-N 6-methyl-3a,4,5,7a-tetrahydro-2-benzofuran-1,3-dione Chemical compound C1CC(C)=CC2C(=O)OC(=O)C12 MWSKJDNQKGCKPA-UHFFFAOYSA-N 0.000 description 2
- LTPBRCUWZOMYOC-UHFFFAOYSA-N Beryllium oxide Chemical compound O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 description 2
- LCFVJGUPQDGYKZ-UHFFFAOYSA-N Bisphenol A diglycidyl ether Chemical compound C=1C=C(OCC2OC2)C=CC=1C(C)(C)C(C=C1)=CC=C1OCC1CO1 LCFVJGUPQDGYKZ-UHFFFAOYSA-N 0.000 description 2
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- LSDPWZHWYPCBBB-UHFFFAOYSA-N Methanethiol Chemical compound SC LSDPWZHWYPCBBB-UHFFFAOYSA-N 0.000 description 2
- 239000006087 Silane Coupling Agent Substances 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 150000008065 acid anhydrides Chemical class 0.000 description 2
- 125000002947 alkylene group Chemical group 0.000 description 2
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 description 2
- ADCOVFLJGNWWNZ-UHFFFAOYSA-N antimony trioxide Chemical compound O=[Sb]O[Sb]=O ADCOVFLJGNWWNZ-UHFFFAOYSA-N 0.000 description 2
- 239000003638 chemical reducing agent Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000006835 compression Effects 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 229930003836 cresol Natural products 0.000 description 2
- ZSWFCLXCOIISFI-UHFFFAOYSA-N cyclopentadiene Chemical compound C1C=CC=C1 ZSWFCLXCOIISFI-UHFFFAOYSA-N 0.000 description 2
- 235000014113 dietary fatty acids Nutrition 0.000 description 2
- XXBDWLFCJWSEKW-UHFFFAOYSA-N dimethylbenzylamine Chemical compound CN(C)CC1=CC=CC=C1 XXBDWLFCJWSEKW-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000194 fatty acid Substances 0.000 description 2
- 229930195729 fatty acid Natural products 0.000 description 2
- 150000004665 fatty acids Chemical class 0.000 description 2
- ANSXAPJVJOKRDJ-UHFFFAOYSA-N furo[3,4-f][2]benzofuran-1,3,5,7-tetrone Chemical compound C1=C2C(=O)OC(=O)C2=CC2=C1C(=O)OC2=O ANSXAPJVJOKRDJ-UHFFFAOYSA-N 0.000 description 2
- 239000005350 fused silica glass Substances 0.000 description 2
- 238000001879 gelation Methods 0.000 description 2
- 230000005484 gravity Effects 0.000 description 2
- 150000002460 imidazoles Chemical class 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- VTHJTEIRLNZDEV-UHFFFAOYSA-L magnesium dihydroxide Chemical compound [OH-].[OH-].[Mg+2] VTHJTEIRLNZDEV-UHFFFAOYSA-L 0.000 description 2
- 239000000347 magnesium hydroxide Substances 0.000 description 2
- 229910001862 magnesium hydroxide Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 229920000768 polyamine Polymers 0.000 description 2
- 238000010298 pulverizing process Methods 0.000 description 2
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 230000000930 thermomechanical effect Effects 0.000 description 2
- RIOQSEWOXXDEQQ-UHFFFAOYSA-N triphenylphosphine Chemical compound C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 RIOQSEWOXXDEQQ-UHFFFAOYSA-N 0.000 description 2
- 239000001993 wax Substances 0.000 description 2
- GGRBEFVMJHQWFG-UHFFFAOYSA-N (2-phenyl-1h-imidazol-5-yl)methanol Chemical compound OCC1=CNC(C=2C=CC=CC=2)=N1 GGRBEFVMJHQWFG-UHFFFAOYSA-N 0.000 description 1
- WYTZZXDRDKSJID-UHFFFAOYSA-N (3-aminopropyl)triethoxysilane Chemical compound CCO[Si](OCC)(OCC)CCCN WYTZZXDRDKSJID-UHFFFAOYSA-N 0.000 description 1
- JYEUMXHLPRZUAT-UHFFFAOYSA-N 1,2,3-triazine Chemical compound C1=CN=NN=C1 JYEUMXHLPRZUAT-UHFFFAOYSA-N 0.000 description 1
- FBHPRUXJQNWTEW-UHFFFAOYSA-N 1-benzyl-2-methylimidazole Chemical compound CC1=NC=CN1CC1=CC=CC=C1 FBHPRUXJQNWTEW-UHFFFAOYSA-N 0.000 description 1
- XZKLXPPYISZJCV-UHFFFAOYSA-N 1-benzyl-2-phenylimidazole Chemical compound C1=CN=C(C=2C=CC=CC=2)N1CC1=CC=CC=C1 XZKLXPPYISZJCV-UHFFFAOYSA-N 0.000 description 1
- YQMXOIAIYXXXEE-UHFFFAOYSA-N 1-benzylpyrrolidin-3-ol Chemical compound C1C(O)CCN1CC1=CC=CC=C1 YQMXOIAIYXXXEE-UHFFFAOYSA-N 0.000 description 1
- SEULWJSKCVACTH-UHFFFAOYSA-N 1-phenylimidazole Chemical compound C1=NC=CN1C1=CC=CC=C1 SEULWJSKCVACTH-UHFFFAOYSA-N 0.000 description 1
- AHDSRXYHVZECER-UHFFFAOYSA-N 2,4,6-tris[(dimethylamino)methyl]phenol Chemical compound CN(C)CC1=CC(CN(C)C)=C(O)C(CN(C)C)=C1 AHDSRXYHVZECER-UHFFFAOYSA-N 0.000 description 1
- CZAZXHQSSWRBHT-UHFFFAOYSA-N 2-(2-hydroxyphenyl)-3,4,5,6-tetramethylphenol Chemical group OC1=C(C)C(C)=C(C)C(C)=C1C1=CC=CC=C1O CZAZXHQSSWRBHT-UHFFFAOYSA-N 0.000 description 1
- PQAMFDRRWURCFQ-UHFFFAOYSA-N 2-ethyl-1h-imidazole Chemical compound CCC1=NC=CN1 PQAMFDRRWURCFQ-UHFFFAOYSA-N 0.000 description 1
- YTWBFUCJVWKCCK-UHFFFAOYSA-N 2-heptadecyl-1h-imidazole Chemical compound CCCCCCCCCCCCCCCCCC1=NC=CN1 YTWBFUCJVWKCCK-UHFFFAOYSA-N 0.000 description 1
- QXSNXUCNBZLVFM-UHFFFAOYSA-N 2-methyl-1h-imidazole;1,3,5-triazinane-2,4,6-trione Chemical compound CC1=NC=CN1.O=C1NC(=O)NC(=O)N1 QXSNXUCNBZLVFM-UHFFFAOYSA-N 0.000 description 1
- RJIQELZAIWFNTQ-UHFFFAOYSA-N 2-phenyl-1h-imidazole;1,3,5-triazinane-2,4,6-trione Chemical compound O=C1NC(=O)NC(=O)N1.C1=CNC(C=2C=CC=CC=2)=N1 RJIQELZAIWFNTQ-UHFFFAOYSA-N 0.000 description 1
- BKCCAYLNRIRKDJ-UHFFFAOYSA-N 2-phenyl-4,5-dihydro-1h-imidazole Chemical compound N1CCN=C1C1=CC=CC=C1 BKCCAYLNRIRKDJ-UHFFFAOYSA-N 0.000 description 1
- LLEASVZEQBICSN-UHFFFAOYSA-N 2-undecyl-1h-imidazole Chemical compound CCCCCCCCCCCC1=NC=CN1 LLEASVZEQBICSN-UHFFFAOYSA-N 0.000 description 1
- BVYPJEBKDLFIDL-UHFFFAOYSA-N 3-(2-phenylimidazol-1-yl)propanenitrile Chemical compound N#CCCN1C=CN=C1C1=CC=CC=C1 BVYPJEBKDLFIDL-UHFFFAOYSA-N 0.000 description 1
- SZUPZARBRLCVCB-UHFFFAOYSA-N 3-(2-undecylimidazol-1-yl)propanenitrile Chemical compound CCCCCCCCCCCC1=NC=CN1CCC#N SZUPZARBRLCVCB-UHFFFAOYSA-N 0.000 description 1
- HXLAEGYMDGUSBD-UHFFFAOYSA-N 3-[diethoxy(methyl)silyl]propan-1-amine Chemical compound CCO[Si](C)(OCC)CCCN HXLAEGYMDGUSBD-UHFFFAOYSA-N 0.000 description 1
- ZYAASQNKCWTPKI-UHFFFAOYSA-N 3-[dimethoxy(methyl)silyl]propan-1-amine Chemical compound CO[Si](C)(OC)CCCN ZYAASQNKCWTPKI-UHFFFAOYSA-N 0.000 description 1
- SJECZPVISLOESU-UHFFFAOYSA-N 3-trimethoxysilylpropan-1-amine Chemical compound CO[Si](OC)(OC)CCCN SJECZPVISLOESU-UHFFFAOYSA-N 0.000 description 1
- UITKHKNFVCYWNG-UHFFFAOYSA-N 4-(3,4-dicarboxybenzoyl)phthalic acid Chemical compound C1=C(C(O)=O)C(C(=O)O)=CC=C1C(=O)C1=CC=C(C(O)=O)C(C(O)=O)=C1 UITKHKNFVCYWNG-UHFFFAOYSA-N 0.000 description 1
- CXXSQMDHHYTRKY-UHFFFAOYSA-N 4-amino-2,3,5-tris(oxiran-2-ylmethyl)phenol Chemical compound C1=C(O)C(CC2OC2)=C(CC2OC2)C(N)=C1CC1CO1 CXXSQMDHHYTRKY-UHFFFAOYSA-N 0.000 description 1
- NJQHZENQKNIRSY-UHFFFAOYSA-N 5-ethyl-1h-imidazole Chemical compound CCC1=CNC=N1 NJQHZENQKNIRSY-UHFFFAOYSA-N 0.000 description 1
- TYOXIFXYEIILLY-UHFFFAOYSA-N 5-methyl-2-phenyl-1h-imidazole Chemical compound N1C(C)=CN=C1C1=CC=CC=C1 TYOXIFXYEIILLY-UHFFFAOYSA-N 0.000 description 1
- YXALYBMHAYZKAP-UHFFFAOYSA-N 7-oxabicyclo[4.1.0]heptan-4-ylmethyl 7-oxabicyclo[4.1.0]heptane-4-carboxylate Chemical compound C1CC2OC2CC1C(=O)OCC1CC2OC2CC1 YXALYBMHAYZKAP-UHFFFAOYSA-N 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 235000010919 Copernicia prunifera Nutrition 0.000 description 1
- 244000180278 Copernicia prunifera Species 0.000 description 1
- 239000002841 Lewis acid Substances 0.000 description 1
- 239000005062 Polybutadiene Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000007983 Tris buffer Substances 0.000 description 1
- UUQQGGWZVKUCBD-UHFFFAOYSA-N [4-(hydroxymethyl)-2-phenyl-1h-imidazol-5-yl]methanol Chemical compound N1C(CO)=C(CO)N=C1C1=CC=CC=C1 UUQQGGWZVKUCBD-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 125000001931 aliphatic group Chemical group 0.000 description 1
- 150000001343 alkyl silanes Chemical class 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000002518 antifoaming agent Substances 0.000 description 1
- 125000003710 aryl alkyl group Chemical group 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 description 1
- XFUOBHWPTSIEOV-UHFFFAOYSA-N bis(oxiran-2-ylmethyl) cyclohexane-1,2-dicarboxylate Chemical compound C1CCCC(C(=O)OCC2OC2)C1C(=O)OCC1CO1 XFUOBHWPTSIEOV-UHFFFAOYSA-N 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- 239000000378 calcium silicate Substances 0.000 description 1
- 229910052918 calcium silicate Inorganic materials 0.000 description 1
- OYACROKNLOSFPA-UHFFFAOYSA-N calcium;dioxido(oxo)silane Chemical compound [Ca+2].[O-][Si]([O-])=O OYACROKNLOSFPA-UHFFFAOYSA-N 0.000 description 1
- 239000004203 carnauba wax Substances 0.000 description 1
- 235000013869 carnauba wax Nutrition 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910002026 crystalline silica Inorganic materials 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- IFDVQVHZEKPUSC-UHFFFAOYSA-N cyclohex-3-ene-1,2-dicarboxylic acid Chemical compound OC(=O)C1CCC=CC1C(O)=O IFDVQVHZEKPUSC-UHFFFAOYSA-N 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 1
- NJLLQSBAHIKGKF-UHFFFAOYSA-N dipotassium dioxido(oxo)titanium Chemical compound [K+].[K+].[O-][Ti]([O-])=O NJLLQSBAHIKGKF-UHFFFAOYSA-N 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 238000012812 general test Methods 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- VPVSTMAPERLKKM-UHFFFAOYSA-N glycoluril Chemical compound N1C(=O)NC2NC(=O)NC21 VPVSTMAPERLKKM-UHFFFAOYSA-N 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000004255 ion exchange chromatography Methods 0.000 description 1
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 1
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 238000007561 laser diffraction method Methods 0.000 description 1
- 150000007517 lewis acids Chemical class 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000003607 modifier Substances 0.000 description 1
- 239000012778 molding material Substances 0.000 description 1
- 229910052863 mullite Inorganic materials 0.000 description 1
- KBJFYLLAMSZSOG-UHFFFAOYSA-N n-(3-trimethoxysilylpropyl)aniline Chemical compound CO[Si](OC)(OC)CCCNC1=CC=CC=C1 KBJFYLLAMSZSOG-UHFFFAOYSA-N 0.000 description 1
- GKTNLYAAZKKMTQ-UHFFFAOYSA-N n-[bis(dimethylamino)phosphinimyl]-n-methylmethanamine Chemical compound CN(C)P(=N)(N(C)C)N(C)C GKTNLYAAZKKMTQ-UHFFFAOYSA-N 0.000 description 1
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000004123 n-propyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- GLTDLAUASUFHNK-UHFFFAOYSA-N n-silylaniline Chemical compound [SiH3]NC1=CC=CC=C1 GLTDLAUASUFHNK-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- WXZMFSXDPGVJKK-UHFFFAOYSA-N pentaerythritol Chemical compound OCC(CO)(CO)CO WXZMFSXDPGVJKK-UHFFFAOYSA-N 0.000 description 1
- 125000001147 pentyl group Chemical group C(CCCC)* 0.000 description 1
- IGALFTFNPPBUDN-UHFFFAOYSA-N phenyl-[2,3,4,5-tetrakis(oxiran-2-ylmethyl)phenyl]methanediamine Chemical compound C=1C(CC2OC2)=C(CC2OC2)C(CC2OC2)=C(CC2OC2)C=1C(N)(N)C1=CC=CC=C1 IGALFTFNPPBUDN-UHFFFAOYSA-N 0.000 description 1
- 150000003014 phosphoric acid esters Chemical class 0.000 description 1
- 229920002857 polybutadiene Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920001451 polypropylene glycol Polymers 0.000 description 1
- 239000005077 polysulfide Substances 0.000 description 1
- 229920001021 polysulfide Polymers 0.000 description 1
- 150000008117 polysulfides Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- WYVAMUWZEOHJOQ-UHFFFAOYSA-N propionic anhydride Chemical compound CCC(=O)OC(=O)CC WYVAMUWZEOHJOQ-UHFFFAOYSA-N 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000000790 scattering method Methods 0.000 description 1
- 125000002914 sec-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 238000010334 sieve classification Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229920002545 silicone oil Polymers 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- 239000004945 silicone rubber Substances 0.000 description 1
- IYMSIPPWHNIMGE-UHFFFAOYSA-N silylurea Chemical compound NC(=O)N[SiH3] IYMSIPPWHNIMGE-UHFFFAOYSA-N 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- 125000003003 spiro group Chemical group 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 150000005846 sugar alcohols Polymers 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- UFDHBDMSHIXOKF-UHFFFAOYSA-N tetrahydrophthalic acid Natural products OC(=O)C1=C(C(O)=O)CCCC1 UFDHBDMSHIXOKF-UHFFFAOYSA-N 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 150000007970 thio esters Chemical class 0.000 description 1
- 150000003568 thioethers Chemical class 0.000 description 1
- UKRDPEFKFJNXQM-UHFFFAOYSA-N vinylsilane Chemical compound [SiH3]C=C UKRDPEFKFJNXQM-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
- 229910052845 zircon Inorganic materials 0.000 description 1
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Epoxy Resins (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Description
本発明は、半導体封止用エポキシ樹脂組成物及びこれを用いた半導体装置に関する。 The present invention relates to an epoxy resin composition for semiconductor encapsulation and a semiconductor device using the same.
近年、電子部品のプリント配線板への高密度実装化に伴い、ＩＣ、ＬＳＩ等の半導体素子を含む半導体装置は、従来の挿入型パッケージから表面実装型パッケージにその主流が変わってきている。
表面実装型では、半導体素子のパッケージに対する占有体積も大きくなり、パッケージの肉厚は非常に薄くなっている。
また、半導体素子の多機能化、大容量化によって、チップ面積の増大、多ピン化が進み、さらにパッド数の増加によって、パッドピッチ及びパッドサイズの縮小化、いわゆる狭パッドピッチ化も進み、それに伴い発熱量も増大している。
2. Description of the Related Art In recent years, with the trend towards higher density mounting of electronic components on printed wiring boards, the mainstream of semiconductor devices including semiconductor elements such as ICs and LSIs has been shifting from conventional insertion type packages to surface mount type packages.
In the surface mounting type, the volume occupied by the semiconductor element in the package is large, and the thickness of the package is very thin.
Furthermore, as semiconductor elements become more multifunctional and larger capacity, the chip area and the number of pins are increasing. Furthermore, as the number of pads increases, the pad pitch and pad size are becoming smaller, or the so-called narrow pad pitch is becoming more prominent, and the amount of heat generated is also increasing.
従来、高熱伝導樹脂の取り組みとして、半導体封止用樹脂組成物にメソゲン基を導入したエポキシ樹脂を用いたものが挙げられる（特許文献１）。しかしながら、半導体封止材としては十分でない。アゾメチン型のメソゲン基は熱伝導率が高いものの、融点が高く、硬化に高温を必要とする。そのため、ゲル化が早く、流動性が悪く、不均一な硬化物になる等の問題を有する。一方、テトラメチルビフェノール骨格のメソゲン基を有するエポキシ樹脂は、１５０℃における溶融粘度が低いものの熱伝導率は不十分であった。
また、硬化促進剤としてイミダゾール系を用いると、メソゲン基の配列を乱し熱伝導率が下がることから、リン系の硬化促進剤を用いることが一般的であった（特許文献２)。
Conventionally, efforts to develop high thermal conductive resins include those using epoxy resins with mesogen groups introduced into semiconductor encapsulation resin compositions (Patent Document 1). However, these are not sufficient as semiconductor encapsulation materials. Although azomethine-type mesogen groups have high thermal conductivity, they have high melting points and require high temperatures for curing. As a result, they have problems such as rapid gelation, poor fluidity, and non-uniform cured products. On the other hand, epoxy resins with mesogen groups of tetramethylbiphenol skeletons have low melt viscosity at 150°C, but insufficient thermal conductivity.
Furthermore, when an imidazole-based curing accelerator is used, the arrangement of mesogen groups is disturbed and the thermal conductivity is reduced, so that it has been common to use a phosphorus-based curing accelerator (Patent Document 2).
このような中、ＡＰ（Ａｐｐｌｉｃａｔｉｏｎ Ｐｒｏｃｅｓｓｏｒ；アプリケーションプロセッサ）やＧＰＵ（Ｇｒａｐｈｉｃｓ Ｐｒｏｃｅｓｓｉｎｇ Ｕｎｉｔ；グラフィックスプロセッシングユニット）等の半導体装置に用いる封止材にあっては、高熱伝導性に加え、バンプギャップが狭くなる、多端子化によりワイヤーが細く本数が増えることから、反りの低減化、高流動性が要求されている。 In this situation, encapsulants used in semiconductor devices such as APs (Application Processors) and GPUs (Graphics Processing Units) are required to have high thermal conductivity, as well as reduced warping and high fluidity due to narrower bump gaps and an increase in the number of thinner wires resulting from multi-terminalization.
本発明は、上記を鑑み、熱伝導性、流動性に優れ、ガラス転移温度が高く、反りの小さい半導体封止用エポキシ樹脂組成物、並びに該半導体封止用エポキシ樹脂組成物を用いた半導体装置を提供することを課題とする。 In view of the above, the present invention aims to provide an epoxy resin composition for semiconductor encapsulation that has excellent thermal conductivity and flowability, a high glass transition temperature, and little warping, as well as a semiconductor device that uses the epoxy resin composition for semiconductor encapsulation.
本発明者らは、上記課題を解決すべく鋭意検討を重ねた結果、エポキシ樹脂中の塩素含有量を特定の範囲に規定することにより、高熱伝導性を有し、高流動性で、反りの小さい樹脂組成物が得られることを見出し、本発明を完成するに至った。
すなわち、本発明は、以下の［１］～［６］を提供するものである。
〔１〕（Ａ）エポキシ樹脂と、（Ｂ）硬化剤と、（Ｃ）硬化促進剤と、（Ｄ）無機充填材と、を含む半導体封止用エポキシ樹脂組成物であって、
前記（Ａ）エポキシ樹脂の塩素含有量が６００ｐｐｍ以下であり、前記（Ｃ）硬化促進剤がイミダゾール系化合物を含む、半導体封止用エポキシ樹脂組成物。
〔２〕前記（Ａ）エポキシ樹脂がビフェニル型エポキシ樹脂を含む、上記〔１〕に記載の半導体封止用エポキシ樹脂組成物。
（３）前記ビフェニル型エポキシ樹脂が下記一般式（１）の構造を含む、上記〔２〕に記載の半導体封止用エポキシ樹脂組成物。
［一般式（１）中、Ｒ１～Ｒ８は、それぞれ独立に、水素原子、炭素数１～６のアルキル基を示す。］
〔４〕前記（Ｄ）無機充填材の熱伝導率が、２０Ｗ／ｍ・Ｋ以上である、上記〔１〕に記載の半導体封止用エポキシ樹脂組成物。
〔５〕上記〔１〕～〔４〕のいずれかに記載の半導体封止用エポキシ樹脂組成物により、半導体素子が封止される、半導体装置。
〔６〕前記〔５〕に記載の半導体装置が、ＡＰ（Ａｐｐｌｉｃａｔｉｏｎ Ｐｒｏｃｅｓｓｏｒ：アプリケーションプロセッサ）又はＧＰＵ（Ｇｒａｐｈｉｃｓ Ｐｒｏｃｅｓｓｉｎｇ Ｕｎｉｔ：グラフィックスプロセッシングユニット）を含む、半導体装置。
Means for Solving the Problems The present inventors conducted extensive research to solve the above problems and discovered that by specifying the chlorine content in an epoxy resin within a specific range, a resin composition having high thermal conductivity, high fluidity and little warping can be obtained, thereby completing the present invention.
That is, the present invention provides the following [1] to [6].
[1] An epoxy resin composition for semiconductor encapsulation, comprising: (A) an epoxy resin; (B) a curing agent; (C) a curing accelerator; and (D) an inorganic filler,
Epoxy resin composition for semiconductor encapsulation, wherein the (A) epoxy resin has a chlorine content of 600 ppm or less, and the (C) curing accelerator contains an imidazole compound.
[2] The epoxy resin composition for semiconductor encapsulation according to the above [1], wherein the epoxy resin (A) contains a biphenyl-type epoxy resin.
(3) The epoxy resin composition for semiconductor encapsulation according to the above item [2], wherein the biphenyl-type epoxy resin comprises a structure represented by the following general formula (1):
[In general formula (1), R 1 to R 8 each independently represent a hydrogen atom or an alkyl group having 1 to 6 carbon atoms.]
[4] The epoxy resin composition for semiconductor encapsulation according to the above [1], wherein the thermal conductivity of the inorganic filler (D) is 20 W/m·K or more.
[5] A semiconductor device, in which a semiconductor element is encapsulated with the epoxy resin composition for semiconductor encapsulation according to any one of [1] to [4] above.
[6] The semiconductor device according to [5] above, further comprising an AP (Application Processor) or a GPU (Graphics Processing Unit).
本発明の半導体封止用エポキシ樹脂組成物によれば、熱伝導性、流動性に優れ、ガラス転移温度が高く、反りの小さい半導体封止用エポキシ樹脂組成物、並びに該半導体封止用エポキシ樹脂組成物を用いた半導体装置を提供することができる。 The epoxy resin composition for semiconductor encapsulation of the present invention can provide an epoxy resin composition for semiconductor encapsulation that has excellent thermal conductivity and flowability, a high glass transition temperature, and little warpage, as well as a semiconductor device that uses the epoxy resin composition for semiconductor encapsulation.
［半導体封止用エポキシ樹脂組成物］
本発明の半導体封止用エポキシ樹脂組成物は、（Ａ）エポキシ樹脂と、（Ｂ）硬化剤と、（Ｃ）硬化促進剤と、（Ｄ）無機充填材と、を含む半導体封止用エポキシ樹脂組成物であって、前記（Ａ）エポキシ樹脂の塩素含有量が６００ｐｐｍ以下であり、前記（Ｃ）硬化促進剤がイミダゾール系化合物を含むことを特徴とする。
[Epoxy resin composition for semiconductor encapsulation]
The epoxy resin composition for semiconductor encapsulation of the present invention comprises (A) an epoxy resin, (B) a curing agent, (C) a curing accelerator, and (D) an inorganic filler, wherein the chlorine content of the epoxy resin (A) is 600 ppm or less, and the curing accelerator (C) contains an imidazole-based compound.
＜（Ａ）エポキシ樹脂＞
本発明で使用する（Ａ）成分のエポキシ樹脂は、１分子中に２個以上のエポキシ基を有するものであれば、分子構造、分子量等に制限されることなく一般に電子部品の封止材料として使用されているものを広く用いることができる。
<(A) Epoxy Resin>
The epoxy resin of component (A) used in the present invention is not limited by its molecular structure, molecular weight, etc., and can be any epoxy resin generally used as a sealing material for electronic components, so long as it has two or more epoxy groups in one molecule.
エポキシ樹脂としては、特に限定されないが、例えば、ビフェノールとエピクロロヒドリンとの反応により得られるビフェニル型エポキシ樹脂、ビスフェノールＡ、ビスフェノールＳ、ビスフェノールＦ等のビスフェノール類とエピクロロヒドリンとの反応により得られるビスフェノール型エポキシ樹脂、フェノールノボラックとエピクロロヒドリンとの反応により得られるフェノールノボラック型エポキシ樹脂、多価カルボン酸とエピクロロヒドリンとの反応により得られるグリシジルエステル型エポキシ樹脂、多価アルコールとエピクロロヒドリンとの反応により得られるグリシジルエーテル型エポキシ樹脂、アミン型エポキシ樹脂、脂環式エポキシ樹脂、脂環式グリシジルエーテル型エポキシ樹脂、トリアジン型エポキシ樹脂、複素環式エポキシ樹脂、スピロ環含有エポキシ樹脂、エポキシ基含有アクリル樹脂、エポキシ変性樹脂等の各種エポキシ樹脂等が挙げられる。 Epoxy resins include, but are not limited to, various epoxy resins such as biphenyl type epoxy resins obtained by reacting biphenol with epichlorohydrin, bisphenol type epoxy resins obtained by reacting bisphenols such as bisphenol A, bisphenol S, and bisphenol F with epichlorohydrin, phenol novolac type epoxy resins obtained by reacting phenol novolac with epichlorohydrin, glycidyl ester type epoxy resins obtained by reacting polycarboxylic acids with epichlorohydrin, glycidyl ether type epoxy resins obtained by reacting polyhydric alcohols with epichlorohydrin, amine type epoxy resins, alicyclic epoxy resins, alicyclic glycidyl ether type epoxy resins, triazine type epoxy resins, heterocyclic epoxy resins, spiro ring-containing epoxy resins, epoxy group-containing acrylic resins, and epoxy modified resins.
ビスフェノール型エポキシ樹脂としては、ビスフェノールＡ型エポキシ樹脂、ビスフェノールＦ型エポキシ樹脂、ビスフェノールＳ型エポキシ樹脂、ビスフェノールＡＤ型エポキシ樹脂等が挙げられる。 Examples of bisphenol type epoxy resins include bisphenol A type epoxy resins, bisphenol F type epoxy resins, bisphenol S type epoxy resins, and bisphenol AD type epoxy resins.
フェノールノボラック型エポキシ樹脂としては、フェノールノボラック型エポキシ樹脂、クレゾールノボラック型エポキシ樹脂等が挙げられる。 Examples of phenol novolac type epoxy resins include phenol novolac type epoxy resins and cresol novolac type epoxy resins.
グリシジルエステル型エポキシ樹脂としては、ヘキサヒドロフタル酸ジグリシジルエステル、テトラヒドロフタル酸ジグリシジルエステル等が挙げられる。 Examples of glycidyl ester type epoxy resins include diglycidyl ester of hexahydrophthalic acid, diglycidyl ester of tetrahydrophthalic acid, etc.
グリシジルエーテル型エポキシ樹脂としては、１，４－シクロヘキサンジメタノールジグリシジルエーテル、ビスフェノールＡのアルキレンオキサイド付加アルコールのジグリシジルエーテル、水素化ビスフェノールＡのアルキレンオキサイド付加アルコールのジグリシジルエーテル、ポリプロピレングリコール類のジグリシジルエーテル、ペンタエリスリトールポリグリシジルエーテル等が挙げられる。 Examples of glycidyl ether type epoxy resins include 1,4-cyclohexanedimethanol diglycidyl ether, diglycidyl ether of alkylene oxide adduct alcohol of bisphenol A, diglycidyl ether of alkylene oxide adduct alcohol of hydrogenated bisphenol A, diglycidyl ether of polypropylene glycols, pentaerythritol polyglycidyl ether, etc.
アミン型エポキシ樹脂としては、トリグリシジル－ｐ－アミノフェノール、トリグリシジルイソシアヌレート、テトラグリシジルメタキシレンジアミン、テトラグリシジルジアミノジフェニルメタン、テトラグリシジル－１，３－ビスアミノメチルシクロヘキサン等が挙げられる。 Examples of amine-type epoxy resins include triglycidyl-p-aminophenol, triglycidyl isocyanurate, tetraglycidyl metaxylenediamine, tetraglycidyl diaminodiphenylmethane, and tetraglycidyl-1,3-bisaminomethylcyclohexane.
脂環式エポキシ樹脂としては、３，４－エポキシシクロヘキシルメチル－３’，４’－エポキシシクロヘキサンカルボキシレート等が挙げられる。 Examples of alicyclic epoxy resins include 3,4-epoxycyclohexylmethyl-3',4'-epoxycyclohexanecarboxylate.
脂環式グリシジルエーテル型エポキシ樹脂としては、水素化ビスフェノールＡ型エポキシ樹脂、水素化ビスフェノールＡのジグリシジルエーテル型エポキシ樹脂、水素化ビスフェノールＦ型エポキシ樹脂等が挙げられる。 Examples of alicyclic glycidyl ether type epoxy resins include hydrogenated bisphenol A type epoxy resins, diglycidyl ether type epoxy resins of hydrogenated bisphenol A, and hydrogenated bisphenol F type epoxy resins.
トリアジン型エポキシ樹脂としては、１，３，５－トリス（２,３－エポキシプロピル）－１,３,５－トリアジン－２,４,６（１Ｈ,３Ｈ,５Ｈ）－トリオン、１－アリル－３,５－ビス（２,３－エポキシプロパン－１－イル）－１,３,５－トリアジン－２,４,６（１Ｈ,３Ｈ,５Ｈ）－トリオン、１，３，５－トリス（２,３－エポキシプロピル）－１,３,５－トリアジン－２,４,６（１Ｈ,３Ｈ,５Ｈ）－トリオンとプロピオン酸無水物との反応生成物と１，３，５－トリス（２,３－エポキシプロピル）－１,３,５－トリアジン－２,４,６（１Ｈ,３Ｈ,５Ｈ）－トリオンから成る混合物、１，３，５－トリス（２,３－エポキシプロピル）－１,３,５－トリアジン－２,４,６（１Ｈ,３Ｈ,５Ｈ）－トリオンのエポキシ変性物等のトリアジン型エポキシ樹脂が挙げられる。 Triazine-type epoxy resins include 1,3,5-tris(2,3-epoxypropyl)-1,3,5-triazine-2,4,6(1H,3H,5H)-trione, 1-allyl-3,5-bis(2,3-epoxypropan-1-yl)-1,3,5-triazine-2,4,6(1H,3H,5H)-trione, 1,3,5-tris(2,3-epoxypropyl)-1,3,5-triazine-2,4,6( Examples of triazine-type epoxy resins include a mixture of a reaction product of 1,3,5-tris(2,3-epoxypropyl)-1,3,5-triazine-2,4,6(1H,3H,5H)-trione and propionic anhydride, and an epoxy-modified product of 1,3,5-tris(2,3-epoxypropyl)-1,3,5-triazine-2,4,6(1H,3H,5H)-trione.
複素環式エポキシ樹脂としては、１,３,４,６－テトラグリシジルグリコールウリル型エポキシ樹脂等の複素環式エポキシ樹脂が挙げられる。 Heterocyclic epoxy resins include heterocyclic epoxy resins such as 1,3,4,6-tetraglycidyl glycoluril type epoxy resins.
これらの中で、（Ａ）成分であるエポキシ樹脂としては、高い熱伝導率、流動性の観点から、結晶性エポキシ樹脂が好ましく、熱伝導率の観点から、メソゲン基を有するエポキシ樹脂が好ましい。 Among these, as the epoxy resin of component (A), crystalline epoxy resins are preferred from the viewpoint of high thermal conductivity and fluidity, and epoxy resins having mesogenic groups are preferred from the viewpoint of thermal conductivity.
前記結晶性を有するエポキシ樹脂としては、ビスフェノール型エポキシ樹脂、ビフェニル型エポキシ樹脂、スルフィド型エポキシ樹脂、ナフタレン型エポキシ樹脂が挙げられる。
この中で、前記ビフェニル型エポキシ樹脂が好ましく、下記一般式（１）で表される構造を含む。
［一般式（１）中、Ｒ１～Ｒ８は、それぞれ独立に、水素原子、炭素数１～６のアルキル基を示す。］
炭素数１～６のアルキル基としては、メチル基、エチル基、ｎ－プロピル基、イソプロピル基、ｎ－ブチル基、イソブチル基、ｓ－ブチル基、ｔ－ブチル基、ペンチル基（異性体を含む）、ヘキシル基（異性体を含む）等が挙げられる。
一態様として、Ｒ２、Ｒ３、Ｒ６及びＲ７がメチル基、又は水素原子であることが好ましい。また、他の態様として、Ｒ１～Ｒ８のすべてが水素原子であることが好ましい。
Examples of the crystalline epoxy resin include bisphenol type epoxy resins, biphenyl type epoxy resins, sulfide type epoxy resins, and naphthalene type epoxy resins.
Among these, the biphenyl type epoxy resin is preferred, and contains a structure represented by the following general formula (1).
[In general formula (1), R 1 to R 8 each independently represent a hydrogen atom or an alkyl group having 1 to 6 carbon atoms.]
Examples of the alkyl group having 1 to 6 carbon atoms include a methyl group, an ethyl group, an n-propyl group, an isopropyl group, an n-butyl group, an isobutyl group, a s-butyl group, a t-butyl group, a pentyl group (including isomers), and a hexyl group (including isomers).
In one embodiment, R 2 , R 3 , R 6 and R 7 are preferably a methyl group or a hydrogen atom, and in another embodiment, R 1 to R 8 are all preferably a hydrogen atom.
前記エポキシ樹脂は、１種を単独で使用してもよく、２種以上を組み合わせて使用してもよい。
例えば、４，４’－ビフェニル型エポキシ樹脂とテトラメチルビフェニル型エポキシ樹脂を組み合わせてもよい。４，４’-ビフェニル型エポキシ樹脂とテトラメチルビフェニル型エポキシ樹脂との質量比が、好ましくは２０：８０～８０：２０であり、より好ましくは３０：７０～７０：３０である。４，４’－ビフェニル型エポキシ樹脂の質量比が大きいと流動性が高く、熱伝導率が高くなる。テトラメチルビフェニル型エポキシ樹脂の質量比が大きいと塩素抽出量が低くなる。
The epoxy resins may be used alone or in combination of two or more.
For example, 4,4'-biphenyl type epoxy resin and tetramethylbiphenyl type epoxy resin may be combined. The mass ratio of 4,4'-biphenyl type epoxy resin to tetramethylbiphenyl type epoxy resin is preferably 20:80 to 80:20, more preferably 30:70 to 70:30. When the mass ratio of 4,4'-biphenyl type epoxy resin is large, the fluidity is high and the thermal conductivity is high. When the mass ratio of tetramethylbiphenyl type epoxy resin is large, the amount of chlorine extraction is low.
（Ａ）成分のエポキシ樹脂の塩素含有量は６００ｐｐｍ以下である。（Ａ）成分のエポキシ樹脂の塩素含有量は６００ｐｐｍ超であると、硬化促進剤としてイミダゾール系化合物を用いた場合には、結晶性又はメソゲンの配列を乱しやすくなり熱伝導率が低くなることがある。（Ａ）エポキシ樹脂の塩素含有量は、好ましくは４００ｐｐｍ以下、より好ましくは２００ｐｐｍ以下、さらに好ましくは１００ｐｐｍ以下であり、含まなくてもよい。前記（Ａ）エポキシ樹脂の塩素含有量がこの範囲にあると、結晶性が増し、硬化促進剤としてイミダゾール系化合物を用いた場合でも、熱伝導率を高くすることができる。 The chlorine content of the epoxy resin of component (A) is 600 ppm or less. If the chlorine content of the epoxy resin of component (A) exceeds 600 ppm, the crystallinity or mesogen arrangement may be easily disturbed and the thermal conductivity may be reduced when an imidazole-based compound is used as a curing accelerator. The chlorine content of the epoxy resin (A) is preferably 400 ppm or less, more preferably 200 ppm or less, and even more preferably 100 ppm or less, and may not be included. If the chlorine content of the epoxy resin (A) is within this range, the crystallinity is increased, and the thermal conductivity can be increased even when an imidazole-based compound is used as a curing accelerator.
前記塩素含有量を満たすビフェニル型エポキシ樹脂の市販品を例示すると、例えば、三菱ケミカル（株）製のＹＸ－４０００ＵＨ（エポキシ当量１９５、塩素含有量２０ｐｐｍ、一般式（１）においてＲ２、Ｒ３、Ｒ６及びＲ７がメチル基）、同ＹＸ－４０００Ｈ（エポキシ当量１９５、塩素含有量２０ｐｐｍ、Ｒ２、Ｒ３、Ｒ６及びＲ７がメチル基）、同ＹＬ６１２１Ｈ（エポキシ当量１７２、塩素含有量５００ｐｐｍ、Ｒ２、Ｒ３、Ｒ６及びＲ７が水素原子である構造とＲ２、Ｒ３、Ｒ６及びＲ７がメチル基である構造が１：１の混合物）、同ＹＬ７９７９Ｈ（エポキシ当量１７２、塩素含有量１５０ｐｐｍ、Ｒ２、Ｒ３、Ｒ６及びＲ７が水素原子である構造とＲ２、Ｒ３、Ｒ６及びＲ７がメチル基である構造が１：１の混合物）等が挙げられる。 Examples of commercially available biphenyl epoxy resins that satisfy the above chlorine content include Mitsubishi Chemical Corporation's YX-4000UH (epoxy equivalent 195, chlorine content 20 ppm, in general formula (1) R 2 , R 3 , R 6 and R 7 are methyl groups), YX-4000H (epoxy equivalent 195, chlorine content 20 ppm, R 2 , R 3 , R 6 and R 7 are methyl groups), YL6121H (epoxy equivalent 172, chlorine content 500 ppm, a 1:1 mixture of a structure in which R 2 , R 3 , R 6 and R 7 are hydrogen atoms and a structure in which R 2 , R 3 , R 6 and R 7 are methyl groups), and YL7979H (epoxy equivalent 172, chlorine content 150 ppm, a structure in which R 2 , R 3 , R 6 and R 7 are hydrogen atoms and a structure in which R 2 , R 3 , R 6 and R 7 are methyl groups). 2 , R 3 , R 6 and R 7 are methyl groups (a 1:1 mixture).
ビフェニル型エポキシ樹脂の使用によって、無機充填材を多量に含有させても溶融粘度を最適範囲に維持することができ、また耐熱性に優れる半導体封止用エポキシ樹脂組成物を得ることができる。 By using biphenyl-type epoxy resins, it is possible to maintain the melt viscosity within the optimal range even when a large amount of inorganic filler is contained, and it is possible to obtain an epoxy resin composition for semiconductor encapsulation that has excellent heat resistance.
（Ａ）エポキシ樹脂の含有量は、エポキシ樹脂組成物全量に対して、０．５～１５質量％が好ましく、２～１０質量％がより好ましい。（Ａ）エポキシ樹脂の含有量が、エポキシ樹脂組成物全量に対して０．５質量％以上であれば成形性や密着性が良好であり、１５質量％以下であれば適正な線膨脹係数を満足できる。 The content of (A) epoxy resin is preferably 0.5 to 15 mass% and more preferably 2 to 10 mass% based on the total amount of the epoxy resin composition. If the content of (A) epoxy resin is 0.5 mass% or more based on the total amount of the epoxy resin composition, the moldability and adhesion are good, and if it is 15 mass% or less, the appropriate linear expansion coefficient can be satisfied.
＜（Ｂ）硬化剤＞
本発明で使用する（Ｂ）成分の硬化剤は、前記（Ａ）成分のエポキシ樹脂を硬化させることができるものであって、電子部品の封止材料として一般に用いられるものであれば特に制限されることなく使用できる。熱伝導性の観点から、塩素含有量は可能な限り含まないことが好ましい。
<(B) Curing Agent>
The curing agent (B) used in the present invention is capable of curing the epoxy resin (A) and can be any curing agent that is generally used as a sealing material for electronic components, without any particular limitations. From the viewpoint of thermal conductivity, it is preferable that the curing agent contains as little chlorine as possible.
（Ｂ）成分の硬化剤は、フェノール系硬化剤を含むことが好ましい。フェノール系硬化剤は、耐燃性、耐湿性、電気特性、硬化性、及び保存安定性等のバランスの観点から好ましい。フェノール系硬化剤は、１分子当たり２個以上のフェノール性水酸基を有し、上記（Ａ）成分のエポキシ樹脂を硬化させることができるものである。 The curing agent of component (B) preferably contains a phenol-based curing agent. Phenol-based curing agents are preferred from the viewpoint of a balance of flame resistance, moisture resistance, electrical properties, curability, storage stability, and the like. Phenol-based curing agents have two or more phenolic hydroxyl groups per molecule and are capable of curing the epoxy resin of component (A) above.
フェノール樹脂硬化剤としては、例えば、フェノールノボラック樹脂、クレゾールノボラック樹脂、アラルキル型フェノール樹脂、ビフェニルアラルキル型フェノール樹脂、ナフタレン型フェノール樹脂、シクロペンタジエン型フェノール樹脂、トリフェノールアルカン型フェノール樹脂等が挙げられる。これらの中で、成形時における流動性を適切に調整でき、（Ｄ）成分の無機充填材等の充填性を向上しやすくする観点から、ビフェニルアラルキル型フェノール樹脂が好ましい。これらは１種を単独で使用してもよく、２種以上を組み合わせて使用してもよい。 Examples of phenolic resin curing agents include phenol novolac resin, cresol novolac resin, aralkyl type phenolic resin, biphenyl aralkyl type phenolic resin, naphthalene type phenolic resin, cyclopentadiene type phenolic resin, triphenol alkane type phenolic resin, etc. Among these, biphenyl aralkyl type phenolic resin is preferred from the viewpoint of being able to appropriately adjust the fluidity during molding and making it easier to improve the filling property of the inorganic filler of component (D). These may be used alone or in combination of two or more.
フェノール系硬化剤以外の（Ｂ）硬化剤としては、例えば、アミン系硬化剤、酸無水物系硬化剤、メルカプタン系硬化剤、触媒型の硬化剤等が挙げられる。
アミン系硬化剤としては、脂肪族ポリアミンや芳香族ポリアミン等が挙げられる。
酸無水物系硬化剤としては、例えば、ヘキサヒドロ無水フタル酸（ＨＨＰＡ）、メチルテトラヒドロ無水フタル酸（ＭＴＨＰＡ）等の脂環族酸無水物、無水トリメリット酸（ＴＭＡ）、無水ピロメリット酸（ＰＭＤＡ）、ベンゾフェノンテトラカルボン酸（ＢＴＤＡ）等の芳香族酸無水物が挙げられる。
メルカプタン系硬化剤としては、ポリサルファイド、チオエステル、チオエーテル等のポリメルカプタン化合物が挙げられる。
触媒型の硬化剤としては、ベンジルジメチルアミン（ＢＤＭＡ）、２，４，６－トリスジメチルアミノメチルフェノール等の３級アミン化合物；２－メチルイミダゾール、２－エチル－４－メチルイミダゾールなどのイミダゾール化合物；ＢＦ３錯体等のルイス酸等が挙げられる。
Examples of the (B) curing agent other than the phenol-based curing agent include an amine-based curing agent, an acid anhydride-based curing agent, a mercaptan-based curing agent, and a catalyst-type curing agent.
Examples of the amine-based curing agent include aliphatic polyamines and aromatic polyamines.
Examples of the acid anhydride curing agent include alicyclic acid anhydrides such as hexahydrophthalic anhydride (HHPA) and methyltetrahydrophthalic anhydride (MTHPA), and aromatic acid anhydrides such as trimellitic anhydride (TMA), pyromellitic anhydride (PMDA), and benzophenonetetracarboxylic acid (BTDA).
Examples of the mercaptan-based curing agent include polymercaptan compounds such as polysulfides, thioesters, and thioethers.
Examples of catalyst-type curing agents include tertiary amine compounds such as benzyldimethylamine (BDMA) and 2,4,6-trisdimethylaminomethylphenol; imidazole compounds such as 2-methylimidazole and 2-ethyl-4-methylimidazole; and Lewis acids such as BF3 complex.
（Ｂ）硬化剤の含有量は、エポキシ樹脂組成物全体の０．５～１５質量％が好ましく、２～１０質量％がより好ましい。また、（Ａ）エポキシ樹脂の含有量が、エポキシ樹脂組成物全体の０．５質量％以上であれば成形性や密着性が良好であり、１５質量％以下であれば適正な線膨脹係数を満足できる。 The content of the (B) curing agent is preferably 0.5 to 15 mass% of the entire epoxy resin composition, and more preferably 2 to 10 mass%. Furthermore, if the content of the (A) epoxy resin is 0.5 mass% or more of the entire epoxy resin composition, the moldability and adhesion are good, and if it is 15 mass% or less, the appropriate linear expansion coefficient can be satisfied.
＜（Ａ）成分と（Ｂ）成分の含有比＞
本発明の組成物における（Ａ）成分のエポキシ樹脂と（Ｂ）成分の硬化剤の含有比は、例えば、（Ｂ）成分の硬化剤としてフェノール樹脂硬化剤を用いた場合は、（Ａ）成分のエポキシ樹脂中のエポキシ基１個に対して、（Ｂ）成分のフェノール樹脂硬化剤中のフェノール性水酸基が、好ましくは０．５個～１．６個、より好ましくは０．６個～１．４個となるように選定される。（Ａ）エポキシ樹脂中のエポキシ基１個に対して（Ｂ）フェノール樹脂硬化剤中のフェノール性水酸基が０．５個～１．６個の範囲内であれば硬化物のガラス転移温度が良好となり十分な架橋密度を有し、強度の高い硬化物を得ることができる。
<Content ratio of component (A) and component (B)>
The content ratio of the epoxy resin (A) and the curing agent (B) in the composition of the present invention is selected so that, for example, when a phenolic resin curing agent is used as the curing agent for the component (B), the number of phenolic hydroxyl groups in the phenolic resin curing agent (B) is preferably 0.5 to 1.6, more preferably 0.6 to 1.4, per epoxy group in the epoxy resin (A). If the number of phenolic hydroxyl groups in the phenolic resin curing agent (B) is within the range of 0.5 to 1.6 per epoxy group in the epoxy resin (A), the glass transition temperature of the cured product is good, and a cured product with sufficient crosslinking density and high strength can be obtained.
＜（Ｃ）硬化促進剤＞
本発明の（Ｃ）成分の硬化促進剤は（Ａ）成分のエポキシ樹脂と（Ｂ）成分の硬化剤の反応を促進するものであり、（Ｃ）成分の硬化促進剤としてイミダゾール系化合物を含む。硬化促進剤をイミダゾール系化合物とすることで耐熱性及び適度な流動性が得られる。
<(C) Curing Accelerator>
The curing accelerator of the present invention, component (C), accelerates the reaction between the epoxy resin of component (A) and the curing agent of component (B), and contains an imidazole-based compound as the curing accelerator of component (C). By using an imidazole-based compound as the curing accelerator, heat resistance and appropriate fluidity can be obtained.
イミダゾール系化合物の具体例としては、例えば、２－ヘプタデシルイミダゾール、２－メチルイミダゾール、２－エチルイミダゾール、２－フェニルイミダゾール、２－フェニル－４－メチルイミダゾール、４－メチルイミダゾール、４－エチルイミダゾール、２－フェニル－４－ヒドロキシメチルイミダゾール、２－エチル－４－メチルイミダゾール、１－シアノエチル－２－メチルイミダゾール、２－フェニル－４－メチル－５－ヒドロキシメチルイミダゾール、２－フェニル－４，５－ジヒドロキシメチルイミダゾール、２－ウンデシルイミダゾール、１－ベンジル－２－メチルイミダゾール、１－ベンジル－２－フェニルイミダゾール、１－シアノエチル－２－メチルイミダゾール、１－シアノエチル－２－エチル－４－メチルイミダゾール、１－シアノエチル－２－ウンデシルイミダゾール、１－シアノエチル－２－フェニルイミダゾール、１－シアノエチル－２－ウンデシルイミダゾリウムトリメリテイト、２，４－ジアミノ－６－［２′－メチルイミダゾリル－（１′）］－エチル－ｓ－トリアジン、２，４－ジアミノ－６－［２′－ウンデシルイミダゾリル－（１′）］－エチル－ｓ－トリアジン、２，４－ジアミノ－６－［２′－エチル－４′－メチルイミダゾリル－（１′）］－エチル－ｓ－トリアジン、２，４－ジアミノ－６－［２′－メチルイミダゾリル－（１′）］－エチル－ｓ－トリアジン、２－フェニルイミダゾールイソシアヌル酸付加物、２－メチルイミダゾールイソシアヌル酸付加物、２－フェニルイミダゾリン等のイミダゾール系化合物が挙げられる。これらの中で、吸湿性が低く、耐リフロー性に優れ、保管ライフが長く、反りが小さく、硬度が良好な半導体装置を得る観点から、フェニルイミダゾール系化合物が好ましく、この中で、２－フェニルイミダゾール、２－フェニル－４－メチル－５－ヒドロキシメチルイミダゾールが好ましい。
これらは１種を単独で使用してもよく、２種以上を組み合わせて使用してもよい。
Specific examples of the imidazole compounds include 2-heptadecylimidazole, 2-methylimidazole, 2-ethylimidazole, 2-phenylimidazole, 2-phenyl-4-methylimidazole, 4-methylimidazole, 4-ethylimidazole, 2-phenyl-4-hydroxymethylimidazole, 2-ethyl-4-methylimidazole, 1-cyanoethyl-2-methylimidazole, 2-phenyl-4-methyl-5-hydroxymethylimidazole, 2-phenyl-4,5-dihydroxymethylimidazole, 2-undecylimidazole, 1-benzyl-2-methylimidazole, 1-benzyl-2-phenylimidazole, 1-cyanoethyl-2-methylimidazole, 1-cyanoethyl-2-ethyl-4-methylimidazo imidazole compounds such as 2-phenylimidazole, 1-cyanoethyl-2-undecylimidazole, 1-cyanoethyl-2-phenylimidazole, 1-cyanoethyl-2-undecylimidazolium trimellitate, 2,4-diamino-6-[2'-methylimidazolyl-(1')]-ethyl-s-triazine, 2,4-diamino-6-[2'-undecylimidazolyl-(1')]-ethyl-s-triazine, 2,4-diamino-6-[2'-ethyl-4'-methylimidazolyl-(1')]-ethyl-s-triazine, 2,4-diamino-6-[2'-methylimidazolyl-(1')]-ethyl-s-triazine, 2-phenylimidazole isocyanuric acid adduct, 2-methylimidazole isocyanuric acid adduct, and 2-phenylimidazoline. Among these, from the viewpoint of obtaining a semiconductor device having low moisture absorption, excellent reflow resistance, long storage life, small warpage, and good hardness, phenylimidazole-based compounds are preferred, and among these, 2-phenylimidazole and 2-phenyl-4-methyl-5-hydroxymethylimidazole are preferred.
These may be used alone or in combination of two or more.
前記（Ｃ）成分の硬化促進剤の含有量は、（Ａ）成分のエポキシ樹脂と（Ｂ）成分の硬化剤の合計量１００質量部に対して、通常０．５～１０質量部、好ましくは１～９質量部、より好ましくは１．５～８質量部の範囲で選定される。含有量が（Ａ）成分と（Ｂ）成分の合計量１００質量部に対して、０．５質量部以上では、硬化性の向上効果に優れ、また１０質量部以下であると、組成物の流動性、成形性等が向上する。 The content of the curing accelerator, component (C), is usually selected within the range of 0.5 to 10 parts by mass, preferably 1 to 9 parts by mass, and more preferably 1.5 to 8 parts by mass, per 100 parts by mass of the epoxy resin, component (A), and the curing agent, component (B). When the content is 0.5 parts by mass or more per 100 parts by mass of the combined total of components (A) and (B), the curing effect is excellent, and when the content is 10 parts by mass or less, the fluidity, moldability, etc. of the composition are improved.
＜（Ｄ）無機充填材＞
本発明で使用する（Ｄ）無機充填材としては、特に制限なく、例えば、半導体封止用樹脂組成物に一般に使用されている公知の無機充填材が挙げられる。
（Ｄ）無機充填材の具体例としては、例えば、溶融シリカ、結晶シリカ、破砕シリカ、合成シリカ、アルミナ、チタニア、マグネシア等の酸化物粉末；水酸化アルミニウム、水酸化マグネシウム等の水酸化物粉末；窒化ケイ素、窒化アルミニウム、窒化ホウ素等の窒化物粉末；ジルコン、ケイ酸カルシウム、炭酸カルシウム、チタン酸カリウム、チタン酸バリウム、炭化ケイ素、ベリリア、ジルコニア、フォステライト、ステアタイト、スピネル、ムライト、等のその他粉末；これらを球形化したビーズ；単結晶繊維；ガラス繊維；等が挙げられる。これらは１種を単独で用いてもよく、２種以上を併用してもよい。さらに、熱伝導率の異なる２種以上の無機充填材を組み合わせることにより、無機充填材のトータルの熱伝導率を調整してもよい。
これらの中でも、熱膨張係数を低減する観点から、溶融シリカが好ましく、また、高熱伝導性を高める観点から、アルミナが好ましい。なかでも（ｄ－１）球状アルミナ粉末や、（ｄ－２）微細球状アルミナ粉末を用いると高熱伝導性が得られるため好ましい。
<(D) Inorganic filler>
The inorganic filler (D) used in the present invention is not particularly limited, and examples thereof include known inorganic fillers that are generally used in semiconductor encapsulation resin compositions.
Specific examples of (D) inorganic fillers include oxide powders such as fused silica, crystalline silica, crushed silica, synthetic silica, alumina, titania, and magnesia; hydroxide powders such as aluminum hydroxide and magnesium hydroxide; nitride powders such as silicon nitride, aluminum nitride, and boron nitride; other powders such as zircon, calcium silicate, calcium carbonate, potassium titanate, barium titanate, silicon carbide, beryllia, zirconia, fosterite, steatite, spinel, and mullite; beads obtained by sphering these; single crystal fibers; glass fibers; and the like. These may be used alone or in combination of two or more. Furthermore, the total thermal conductivity of the inorganic filler may be adjusted by combining two or more inorganic fillers with different thermal conductivities.
Among these, fused silica is preferred from the viewpoint of reducing the thermal expansion coefficient, and alumina is preferred from the viewpoint of increasing thermal conductivity. Among these, (d-1) spherical alumina powder and (d-2) fine spherical alumina powder are preferred because they provide high thermal conductivity.
また、無機充填材の形状としては、特に制限はないが、成形時の流動性を向上させ、金型の摩耗を抑える観点から、球形が好ましい。 There are no particular limitations on the shape of the inorganic filler, but a spherical shape is preferred from the standpoint of improving fluidity during molding and reducing wear on the mold.
本発明に用いる（Ｄ）無機充填材の熱伝導率は、好ましくは２０Ｗ／ｍ・Ｋ以上である。無機充填材の熱伝導率がこの値であると、エポキシ樹脂組成物により得られる硬化物の熱伝導性を高くすることができる。該熱伝導率は３０Ｗ／ｍ・Ｋ以上がより好ましい。なお、熱伝導率の上限値は特に限定されないが、絶縁性の観点から、高熱伝導率を有する金属等は使用できない。また、本明細書でいう無機充填材の熱伝導率とは、熱伝導率が異なる複数の無機充填材を組み合わせて用いることで発現する複合の熱伝導率を含むものとする。
無機充填材の熱伝導率は、例えば、該無機充填材を焼結あるいは溶融後に冷却成形するなどして、板状の成形物を作製し、熱伝導率測定装置（京都電子工業（株）製、品番：ＴＰＡ－５０１）を用い、ホットディスク法により測定することができる。
The thermal conductivity of the inorganic filler (D) used in the present invention is preferably 20 W/m·K or more. When the thermal conductivity of the inorganic filler is this value, the thermal conductivity of the cured product obtained by the epoxy resin composition can be increased. The thermal conductivity is more preferably 30 W/m·K or more. The upper limit of the thermal conductivity is not particularly limited, but metals having high thermal conductivity cannot be used from the viewpoint of insulation. In addition, the thermal conductivity of the inorganic filler in this specification includes a composite thermal conductivity that is expressed by combining and using multiple inorganic fillers with different thermal conductivities.
The thermal conductivity of the inorganic filler can be measured, for example, by preparing a plate-shaped molded product by sintering or melting the inorganic filler and then cooling and molding it, and using a thermal conductivity measuring device (manufactured by Kyoto Electronics Manufacturing Co., Ltd., product number: TPA-501) by the hot disk method.
（Ｄ）無機充填材の体積平均粒子径は、０．０１～１００μｍであることが好ましく、０．０３～４０μｍであることがより好ましく、さらに好ましくは０．０５～３０μｍである。
また、２種類以上の無機充填材を含有させる場合は、粒子径に分布を持たせてもよく、例えば、前記の（ｄ－１）球状アルミナ粉末と（ｄ－２）微細球状アルミナ粉末を併用する場合は、（ｄ－１）球状アルミナ粉末の平均粒子径が２μｍ以上１００μｍ以下、（ｄ－２）微細球状シリカ粉末の平均粒子径が０．０１μｍ以上２μｍ未満であることが好ましい。さらに、それらの質量含有比は、（ｄ－１）球状アルミナ粉末：（ｄ－２）微細球状シリカ粉末が９５：５～７０：３０であることが、成形性や流動性を向上できる観点から好ましい。
なお、前記平均粒子径は、レーザ回折式粒度分布測定装置（例えば、（株）島津製作所製、装置名：ＳＡＬＤ-３１００）により測定された値である。
The volume average particle size of the inorganic filler (D) is preferably 0.01 to 100 μm, more preferably 0.03 to 40 μm, and even more preferably 0.05 to 30 μm.
In addition, when two or more types of inorganic fillers are contained, the particle size may be distributed, and for example, when the spherical alumina powder (d-1) and the fine spherical alumina powder (d-2) are used in combination, it is preferable that the average particle size of the spherical alumina powder (d-1) is 2 μm or more and 100 μm or less, and that the average particle size of the fine spherical silica powder (d-2) is 0.01 μm or more and less than 2 μm. Furthermore, it is preferable that the mass content ratio of the spherical alumina powder (d-1) to the fine spherical silica powder (d-2) is 95:5 to 70:30 from the viewpoint of improving moldability and flowability.
The average particle size is a value measured by a laser diffraction particle size distribution measuring device (for example, device name: SALD-3100, manufactured by Shimadzu Corporation).
前記（Ｄ）無機充填材の含有量は、半導体封止用エポキシ樹脂組成物全体の７０質量％を超え、９５質量％未満の範囲に設定することが好ましい。すなわち、（Ｄ）成分の含有量が上記下限値以上であると、熱伝導性に優れ、逆に、（Ｄ）成分の含有量が上記上限値未満であると、半導体封止用エポキシ樹脂組成物の流動性が高いため成形性に優れる。 The content of the inorganic filler (D) is preferably set to a range of more than 70% by mass and less than 95% by mass of the entire epoxy resin composition for semiconductor encapsulation. In other words, when the content of the (D) component is equal to or greater than the above lower limit, the epoxy resin composition for semiconductor encapsulation has excellent thermal conductivity, and conversely, when the content of the (D) component is less than the above upper limit, the epoxy resin composition for semiconductor encapsulation has high fluidity and therefore excellent moldability.
＜添加剤＞
また、本発明の半導体封止用エポキシ樹脂組成物には、必須成分である前記（Ａ）～（Ｄ）成分の他、本発明の効果を阻害しない範囲で、この種の組成物に任意成分としての添加剤を一般に含有することができる。添加剤としては、難燃剤；カップリング剤；合成ワックス、天然ワックス、高級脂肪酸、高級脂肪酸の金属塩等の離型剤；カーボンブラック、コバルトブルー等の着色剤；シリコーンオイル、シリコーンゴム等の改質剤；ハイドロタルサイト類等の安定剤；イオン捕捉剤；低応力剤；分散剤；消泡剤等が挙げられる。これらの各添加剤はいずれも、１種を単独で使用してもよく、２種以上を併用してもよい。
<Additives>
In addition to the essential components (A) to (D), the epoxy resin composition for semiconductor encapsulation of the present invention can generally contain additives as optional components in this type of composition, provided that the effects of the present invention are not impaired. Examples of additives include flame retardants; coupling agents; release agents such as synthetic wax, natural wax, higher fatty acid, and metal salts of higher fatty acid; colorants such as carbon black and cobalt blue; modifiers such as silicone oil and silicone rubber; stabilizers such as hydrotalcites; ion scavengers; stress reducing agents; dispersants; and antifoaming agents. Each of these additives may be used alone or in combination of two or more.
難燃剤の具体例としては、ハロゲン系難燃剤、三酸化アンチモン、水酸化アルミニウム、水酸化マグネシウム、酸化亜鉛等の金属元素を含む難燃剤や、リン酸エステル等のリン系難燃剤等が挙げられる。 Specific examples of flame retardants include halogen-based flame retardants, flame retardants containing metal elements such as antimony trioxide, aluminum hydroxide, magnesium hydroxide, and zinc oxide, and phosphorus-based flame retardants such as phosphate esters.
カップリング剤の具体例としては、エポキシシラン系、アミノシラン系、ウレイドシラン系、ビニルシラン系、アルキルシラン系、有機チタネート系、アルミニウムアルコレート系等のカップリング剤が挙げられる。流動性及び硬化性を向上させる観点からは、なかでも、アミノシラン系カップリング剤が好ましく、特に、３－アミノプロピルトリメトキシシラン、３－アミノプロピルトリエトキシシラン、３－アミノプロピルメチルジメトキシシラン、３－アミノプロピルメチルジエトキシシラン、３－フェニルアミノプロピルトリメトキシシランが好ましい。 Specific examples of coupling agents include epoxysilane-based, aminosilane-based, ureidosilane-based, vinylsilane-based, alkylsilane-based, organic titanate-based, and aluminum alcoholate-based coupling agents. From the viewpoint of improving fluidity and curing properties, aminosilane-based coupling agents are preferred, and 3-aminopropyltrimethoxysilane, 3-aminopropyltriethoxysilane, 3-aminopropylmethyldimethoxysilane, 3-aminopropylmethyldiethoxysilane, and 3-phenylaminopropyltrimethoxysilane are particularly preferred.
本発明の半導体封止用エポキシ樹脂組成物において、上記の任意成分の含有量は、組成物の全量に対して、０．０１～１０質量％であることが好ましく、０．１～５質量％であることがより好ましい。 In the epoxy resin composition for semiconductor encapsulation of the present invention, the content of the above optional components is preferably 0.01 to 10% by mass, and more preferably 0.1 to 5% by mass, based on the total amount of the composition.
本発明の半導体封止用エポキシ樹脂組成物において、（Ａ）～（Ｄ）成分の合計含有率は、８０～９９．９９質量％が好ましく、９０～９９．９９質量％がより好ましく、９５～９９．９９質量％が特に好ましい。 In the epoxy resin composition for semiconductor encapsulation of the present invention, the total content of components (A) to (D) is preferably 80 to 99.99% by mass, more preferably 90 to 99.99% by mass, and particularly preferably 95 to 99.99% by mass.
本発明の半導体封止用エポキシ樹脂組成物を調製するにあたっては、（Ａ）エポキシ樹脂、（Ｂ）硬化剤、（Ｃ）硬化促進剤、（Ｄ）無機充填材、及び前記添加剤等の各種成分をミキサー等によって予備混合した後、ディスパース、ニーダー、３本ロールミル等により混練処理を行い、次いで、冷却固化させ、適当な大きさに粉砕することにより、調製することができる。
上記粉砕方法は特に制限されず、一般的な粉砕機を用いることができる。
粉砕機としては、好ましくは、カッティングミル、ボールミル、サイクロンミル、ハンマーミル、振動ミル、カッターミル、グラインダーミル、さらに好ましくは、スピードミルを挙げることができる。
In preparing the epoxy resin composition for semiconductor encapsulation of the present invention, various components such as (A) the epoxy resin, (B) the curing agent, (C) the curing accelerator, (D) the inorganic filler, and the above-mentioned additives are premixed using a mixer or the like, and then kneaded using a disperse, kneader, triple roll mill, or the like. The resulting mixture is then cooled and solidified, and pulverized to an appropriate size, whereby the composition can be prepared.
The above-mentioned pulverization method is not particularly limited, and a general pulverizer can be used.
As the pulverizer, preferably, a cutting mill, a ball mill, a cyclone mill, a hammer mill, a vibration mill, a cutter mill, a grinder mill, and more preferably, a speed mill can be mentioned.
本発明の半導体封止用エポキシ樹脂組成物は、タブレット状、粉粒状、シート状等成形方法に応じた形状に加工してもよい。 The epoxy resin composition for semiconductor encapsulation of the present invention may be processed into a shape such as tablet, powder, or sheet depending on the molding method.
タブレット状の半導体封止用エポキシ樹脂組成物を製造する方法は、得られた樹脂組成物を加圧して、タブレット状に成形する工程を有する。タブレット状に成形する方法としては、例えば、顧客の要求に合わせたタブレットのサイズの金型に投入し、圧縮成形機を使用して圧縮率８０～９５％で圧縮成形する方法等が挙げられる。 The method for producing tablet-shaped epoxy resin composition for semiconductor encapsulation includes a step of compressing the obtained resin composition and forming it into a tablet shape. For example, the method for forming into a tablet shape includes a method in which the composition is placed in a mold of a tablet size according to the customer's request, and compression molding is performed at a compression ratio of 80 to 95% using a compression molding machine.
粉粒状、の半導体封止用エポキシ樹脂組成物を製造する方法は、上記粉砕工程で得られた粉砕物を、篩い分級、エアー分級等によって所定の粒度分布を持つ粒子集合体に調整する分級工程を行うことで得られる。例えば、７～５００メッシュ程度の篩を用いて分級する。 The method for producing a powdered epoxy resin composition for semiconductor encapsulation involves a classification process in which the pulverized material obtained in the above-mentioned pulverization process is adjusted to a particle aggregate having a predetermined particle size distribution by sieve classification, air classification, or the like. For example, classification is performed using a sieve of about 7 to 500 mesh.
シート状の半導体封止用エポキシ樹脂組成物を製造する方法は、封止用エポキシ樹脂組成物を溶剤希釈した後、フィルム化することにより得ることができる。例えば、溶剤希釈した封止用エポキシ樹脂組成物を塗布して得られた塗布膜に対して、溶剤を除去することにより得ることができる。
シート状とすることで、例えば、枚葉状または巻き取り可能なロール状とすることができる。
The sheet-shaped epoxy resin composition for semiconductor encapsulation can be produced by diluting the epoxy resin composition for encapsulation with a solvent and forming it into a film. For example, the epoxy resin composition for encapsulation can be coated with a solvent-diluted epoxy resin composition to obtain a coating film, and then removing the solvent from the coating film.
By forming it into a sheet form, for example, it can be formed into a sheet form or a roll form that can be wound up.
次に、本発明の半導体装置について説明する。 Next, we will explain the semiconductor device of the present invention.
本発明の半導体装置は、半導体封止用エポキシ樹脂組成物により、半導体素子が封止されることが好ましい。 In the semiconductor device of the present invention, the semiconductor element is preferably encapsulated with an epoxy resin composition for semiconductor encapsulation.
図１は、本発明の半導体封止用エポキシ樹脂組成物を備えた半導体装置の構成の一例を示す断面図である。
半導体装置は、裏面にはんだボール５を有する支持基板４上にバンプ３を介し半導体素子１を備え、半導体素子１とバンプ３との間、及びそれらの周囲（側面、上面）に、本発明の封止材用エポキシ樹脂組成物でなる封止材２が備わる構造を有する。
はんだボール５は配線板との接続用の端子として用いられ、バンプ３は半導体素子１と支持基板４に形成された配線とを接続するために用いられる。
FIG. 1 is a cross-sectional view showing an example of the configuration of a semiconductor device provided with the epoxy resin composition for semiconductor encapsulation of the present invention.
The semiconductor device has a structure in which a semiconductor element 1 is mounted via bumps 3 on a support substrate 4 having solder balls 5 on the back surface thereof, and an encapsulant 2 made of the epoxy resin composition for encapsulation of the present invention is provided between the semiconductor element 1 and the bumps 3 and around them (side and top surfaces).
The solder balls 5 are used as terminals for connection to a wiring board, and the bumps 3 are used to connect the semiconductor element 1 to wiring formed on the support substrate 4 .
本発明の半導体装置は、本発明の半導体封止用エポキシ樹脂組成物を用いて、トランスファー成形、圧縮成形、シート成形等により次のように製造することができる。 The semiconductor device of the present invention can be manufactured as follows using the epoxy resin composition for semiconductor encapsulation of the present invention by transfer molding, compression molding, sheet molding, etc.
タブレット状半導体封止用エポキシ樹脂組成物を用いる場合は、通常のトランスファー成形等の公知のモールド方法によって、１５０～２５０℃の間の封止温度で製造することができる。 When using a tablet-shaped epoxy resin composition for semiconductor encapsulation, it can be manufactured at an encapsulation temperature between 150 and 250°C using a known molding method such as ordinary transfer molding.
粉粒状半導体封止用エポキシ樹脂組成物を用いる場合は以下のようにして製造する。
まず、成形型の上型に半導体部品を実装した基板を供給するとともに、下型のキャビティ内に本発明の粉粒状半導体封止用エポキシ樹脂組成物を供給する。次いで、上下両型を所要の型締圧力にて型締めすることにより、下型キャビティ内で加熱溶融された樹脂組成物に半導体部品を浸漬する。この後、下型キャビティ内の加熱溶融された樹脂組成物をキャビティ底面部材で押圧し、減圧下、所要の圧力を加え、圧縮成形する。成形条件は、好ましくは、温度１２０～２００℃、圧力２～２０ＭＰａである。このような成形条件で圧縮成形することにより、本発明の半導体装置が得られる。
When a particulate epoxy resin composition for semiconductor encapsulation is used, it is produced as follows.
First, a substrate on which a semiconductor component is mounted is supplied to the upper mold of a molding die, and the powdered epoxy resin composition for semiconductor encapsulation of the present invention is supplied to the cavity of the lower mold. Next, the upper and lower molds are clamped at a required clamping pressure, and the semiconductor component is immersed in the heated and melted resin composition in the lower mold cavity. Thereafter, the heated and melted resin composition in the lower mold cavity is pressed with the cavity bottom member, and a required pressure is applied under reduced pressure to perform compression molding. The molding conditions are preferably a temperature of 120 to 200°C and a pressure of 2 to 20 MPa. By compression molding under such molding conditions, the semiconductor device of the present invention can be obtained.
シート状半導体封止用エポキシ樹脂組成物を用いる場合は、例えば、基材に搭載された半導体素子を上下金型のキャビティ内にセットし、ワイヤボンディング部の上に、シート状半導体封止用エポキシ樹脂組成物を載せた後、プレス機を用いて上下金型を型締めし、加圧しながら加熱してシート状半導体封止用エポキシ樹脂組成物を硬化することにより、本発明の半導体装置が得られる。 When using a sheet-shaped epoxy resin composition for semiconductor encapsulation, for example, a semiconductor element mounted on a substrate is set in the cavities of upper and lower molds, the sheet-shaped epoxy resin composition for semiconductor encapsulation is placed on the wire bonding portion, and then the upper and lower molds are clamped using a press machine and heated while applying pressure to harden the sheet-shaped epoxy resin composition for semiconductor encapsulation, thereby obtaining the semiconductor device of the present invention.
本発明の半導体装置において適用できる半導体素子は、特に限定されるものではなく、例えば、集積回路、大規模集積回路、トランジスタ、サイリスタ、ダイオード、固体撮像素子、ＡＰ（Ａｐｐｌｉｃａｔｉｏｎ Ｐｒｏｃｅｓｓｏｒ：アプリケーションプロセッサ）又はＧＰＵ（Ｇｒａｐｈｉｃｓ Ｐｒｏｃｅｓｓｉｎｇ Ｕｎｉｔ：グラフィックスプロセッシングユニット）等の半導体素子、特に熱伝導率が高く、高い放熱性を有することから、ＡＰ又はＧＰＵ等の半導体装置の封止材に用いることが好ましい。
なお、本明細書では、「ＡＰ」及び「ＧＰＵ」を単に半導体素子、又は半導体装置ということがある。
The semiconductor element applicable to the semiconductor device of the present invention is not particularly limited, and examples thereof include semiconductor elements such as integrated circuits, large-scale integrated circuits, transistors, thyristors, diodes, solid-state imaging elements, APs (Application Processors) and GPUs (Graphics Processing Units), and since the semiconductor elements have particularly high thermal conductivity and high heat dissipation properties, they are preferably used as an encapsulant for semiconductor devices such as APs or GPUs.
In this specification, the "AP" and "GPU" may be simply referred to as a semiconductor element or a semiconductor device.
このように、本発明の半導体封止用エポキシ樹脂組成物を用いることにより、高い放熱性を備え、狭部の充填性、反りが低減した半導体装置を得ることができる。 In this way, by using the epoxy resin composition for semiconductor encapsulation of the present invention, it is possible to obtain a semiconductor device that has high heat dissipation properties, fills narrow spaces well, and has reduced warping.
次に、本発明を実施例によりさらに詳細に説明するが、本発明はこれらの実施例に何ら限定されるものではない。なお、以下の実施例及び比較例において使用した材料は下記の通りである。また、「部」は特に断らない限り「質量部」を意味する。 Next, the present invention will be described in more detail with reference to examples, but the present invention is not limited to these examples. The materials used in the following examples and comparative examples are as follows. In addition, "parts" means "parts by mass" unless otherwise specified.
（実施例１）
（Ａ）成分としてエポキシ樹脂（ａ－１）２．６６部；（Ｂ）成分として硬化剤（ｂ－１）２．７８部；（Ｃ）成分として硬化促進剤（ｃ－１）０．２０部、；（Ｄ）成分として無機充填材（ｄ－１）７７．００部、無機充填材（ｄ－２）１７．００部、カーボンブラック（ｄ－３）０．３０部；添加剤として離型剤０．１０部、難燃剤０．３０部、低応力剤０．２０部、並びにシランカップリング剤０．３０部、を常温（２０℃）で混合し、次いで、ミキシング２軸ロールを用い１２０℃で加熱混練し半導体封止用エポキシ樹脂組成物を得た。
Example 1
2.66 parts of epoxy resin (a-1) as component (A); 2.78 parts of curing agent (b-1) as component (B); 0.20 parts of curing accelerator (c-1) as component (C); 77.00 parts of inorganic filler (d-1), 17.00 parts of inorganic filler (d-2), and 0.30 parts of carbon black (d-3) as component (D); 0.10 parts of release agent, 0.30 parts of flame retardant, 0.20 parts of stress reducing agent, and 0.30 parts of silane coupling agent as additives were mixed at room temperature (20° C.), and then heated and kneaded at 120° C. using a mixing biaxial roll to obtain an epoxy resin composition for semiconductor encapsulation.
（実施例２～６、及び比較例１～４）
（Ａ）成分、（Ｂ）成分及び（Ｃ）成分の種類とその含有量を表１に示すように変更した以外は、実施例１と同様にして半導体封止用エポキシ樹脂組成物及び比較のための樹脂組成物を得た。
(Examples 2 to 6 and Comparative Examples 1 to 4)
[0123] Epoxy resin compositions for semiconductor encapsulation and comparative resin compositions were obtained in the same manner as in Example 1, except that the types and contents of the component (A), component (B), and component (C) were changed as shown in Table 1.
半導体封止用エポキシ樹脂組成物の調製に使用した、表１に記載の各成分の詳細は以下のとおりである。 The details of each component used in the preparation of the epoxy resin composition for semiconductor encapsulation, as shown in Table 1, are as follows:
＜エポキシ樹脂＞
〔（Ａ）成分〕
・（ａ－１）ＹＸ－４０００ＵＨ：ビフェニル型エポキシ樹脂、エポキシ当量１９５、塩素含有量２０ｐｐｍ、三菱ケミカル（株）製、商品名
・（ａ－２）ＹＸ－４０００Ｈ：ビフェニル型エポキシ樹脂、エポキシ当量１９５、塩素含有量４００ｐｐｍ、三菱ケミカル（株）製、商品名
・（ａ－３）ＹＸ－４０００：ビフェニル型エポキシ樹脂、エポキシ当量１９５、塩素含有量１０００ｐｐｍ、三菱ケミカル（株）製、商品名
・（ａ－４）ＹＬ６１２１Ｈ：ビフェニル型エポキシ樹脂、エポキシ当量１７２、塩素含有量５００ｐｐｍ、三菱ケミカル（株）製、商品名
・（ａ－５）ＹＬ７９７９：ビフェニル型エポキシ樹脂、エポキシ当量１７２、塩素含有量１５０ｐｐｍ、三菱ケミカル（株）製、商品名
<Epoxy resin>
[Component (A)]
(a-1) YX-4000UH: biphenyl type epoxy resin, epoxy equivalent 195, chlorine content 20 ppm, manufactured by Mitsubishi Chemical Corporation, trade name; (a-2) YX-4000H: biphenyl type epoxy resin, epoxy equivalent 195, chlorine content 400 ppm, manufactured by Mitsubishi Chemical Corporation, trade name; (a-3) YX-4000: biphenyl type epoxy resin, epoxy equivalent 195, chlorine content 1000 ppm, manufactured by Mitsubishi Chemical Corporation, trade name; (a-4) YL6121H: biphenyl type epoxy resin, epoxy equivalent 172, chlorine content 500 ppm, manufactured by Mitsubishi Chemical Corporation, trade name; (a-5) YL7979: biphenyl type epoxy resin, epoxy equivalent 172, chlorine content 150 ppm, manufactured by Mitsubishi Chemical Corporation, trade name
＜硬化剤＞
〔（Ｂ）成分〕
・（ｂ－１）ＭＥＨＣ－７８５１ＳＳ：ビフェニルアラルキル型フェノール樹脂、水酸基当量２０５、明和化成（株）製、商品名
・（ｂ－２）ＢＲＧ－５５６：フェノールノボラック樹脂、水酸基当量１０４、昭和高分子（株）製、商品名
<Curing Agent>
[Component (B)]
(b-1) MEHC-7851SS: biphenyl aralkyl type phenol resin, hydroxyl equivalent 205, manufactured by Meiwa Kasei Co., Ltd., trade name; (b-2) BRG-556: phenol novolac resin, hydroxyl equivalent 104, manufactured by Showa Polymer Co., Ltd., trade name
＜硬化促進剤＞
〔（Ｃ）成分〕
・（ｃ－１）２Ｐ４ＭＨＺ：四国化成工業（株）製、商品名、
・（ｃ－２）ＰＰ－２００：北興化学工業（株）製、商品名、トリフェニルホスフィン
<Curing accelerator>
[Component (C)]
(c-1) 2P4MHZ: Trade name, manufactured by Shikoku Chemical Industry Co., Ltd.
(c-2) PP-200: Trade name, manufactured by Hokko Chemical Industry Co., Ltd., triphenylphosphine
＜無機充填材＞
〔（Ｄ）成分〕
・（ｄ－１）ＤＡＢ－８０ＳＡ：球状アルミナ、デンカ（株）製、平均粒子径１０．３μｍ
・（ｄ－２）ＡＯ－５０２：微細球状アルミナ、（株）アドマテックス製、平均粒子径０．７μｍ
・（ｄ－３）ＭＡ－１００ＲＭＪ：カーボンブラック、三菱ケミカル（株）製
<Inorganic filler>
[Component (D)]
(d-1) DAB-80SA: spherical alumina, manufactured by Denka Co., Ltd., average particle size 10.3 μm
(d-2) AO-502: fine spherical alumina, manufactured by Admatechs Co., Ltd., average particle size 0.7 μm
(d-3) MA-100RMJ: Carbon black, manufactured by Mitsubishi Chemical Corporation
＜添加剤＞
〔離型剤〕
・カルナバ：天然カルナバワックス、東洋ペトロライト（株）製、商品名
〔難燃剤〕
・ＦＰ－１００：環状ホスファゼンオリゴマー、（株）伏見製薬所製、商品名
〔低応力剤〕
・Ｒｉｃｏｎ ６５７：エポキシ基含有ポリブタジエン、クレイバレー（株）製、商品名〔シランカップリング剤〕
・ＸＳ－１０７５：フェニルアミノシラン、ＪＮＣ（株）製
<Additives>
〔Release agent〕
Carnauba: Natural carnauba wax, manufactured by Toyo Petrolite Co., Ltd., product name [flame retardant]
FP-100: Cyclic phosphazene oligomer, manufactured by Fushimi Pharmaceutical Co., Ltd., trade name [low stress agent]
Ricon 657: Epoxy group-containing polybutadiene, manufactured by Cray Valley Corporation, trade name [silane coupling agent]
XS-1075: Phenylaminosilane, manufactured by JNC Corporation
なお、実施例及び比較例で用いた無機充填材について、レーザ回折／散乱式粒度分布測定装置（（株）堀場製作所製、製品名：ＬＡ－９２０）を用いて、レーザ回折散乱方式によりメジアン径を測定し、これを平均粒子径とした。 The median diameter of the inorganic fillers used in the examples and comparative examples was measured by the laser diffraction/scattering method using a laser diffraction/scattering particle size distribution analyzer (manufactured by Horiba, Ltd., product name: LA-920), and this was taken as the average particle diameter.
前記実施例及び比較例で得られた半導体封止用エポキシ樹脂組成物及びそれらの成形品について、下記に示す方法で各種特性を評価した。結果を表１に示す。 The properties of the epoxy resin compositions for semiconductor encapsulation and the molded articles thereof obtained in the above examples and comparative examples were evaluated using the methods described below. The results are shown in Table 1.
＜半導体封止用エポキシ樹脂組成物の評価＞
（１）熱伝導率
半導体封止用エポキシ樹脂組成物を、１７５℃、成形圧力１００ｋｇ／ｃｍ２、加圧時間１０分間の条件でトランスファー成形して作製した円盤状試験片（直径１００ｍｍ、厚さ２６ｍｍ）について、迅速熱伝導率計（京都電子工業（株）製、製品名：Ｋｅｍｔｈｅｒｍ ＱＴＭ－３）を用いて測定した。
<Evaluation of epoxy resin composition for semiconductor encapsulation>
(1) Thermal Conductivity A disk-shaped test piece (diameter 100 mm, thickness 26 mm) was prepared by transfer molding the epoxy resin composition for semiconductor encapsulation under conditions of 175°C, molding pressure 100 kg/ cm2 , and pressure time 10 minutes. The thermal conductivity was measured using a rapid thermal conductivity meter (Kyoto Electronics Manufacturing Co., Ltd., product name: Kemtherm QTM-3).
（２）ゲル化時間ＧＴ
ＪＩＳ Ｃ ２１６１ ７．５．１に規定されるゲル化時間Ａ法に準拠して、１５０℃の熱盤上で１．５ｇの半導体封止用エポキシ樹脂組成物を直径約４０～５０ｍｍの円板状に広げ、金属製のへらを用いて６０回／分の速度でかき混ぜ、エポキシ樹脂組成物が増粘し、最終的にゲル状になってかき混ぜられなくなるまでの時間を測定した。
(2) Gel time GT
In accordance with the gelation time method A specified in JIS C 2161 7.5.1, 1.5 g of the epoxy resin composition for semiconductor encapsulation was spread into a disk shape with a diameter of about 40 to 50 mm on a hot plate at 150°C, and stirred at a speed of 60 revolutions per minute with a metal spatula, and the time until the epoxy resin composition thickened and finally became gel-like and could no longer be stirred was measured.
（３）スパイラルフロー（流動性）
半導体封止用エポキシ樹脂組成物を、成形温度１７５℃、成形圧力９．８ＭＰａの条件でトランスファー成形することでスパイラルフロー（樹脂組成物の流動距離）を測定した。
(3) Spiral flow (fluidity)
The epoxy resin composition for semiconductor encapsulation was transfer molded under conditions of a molding temperature of 175° C. and a molding pressure of 9.8 MPa, and the spiral flow (flow distance of the resin composition) was measured.
（４）フロー粘度
半導体封止用エポキシ樹脂組成物のフロー粘度を、フローテスタ（（株）島津製作所製、型名：ＣＦＴ－５００）を用いて、温度１７５℃、ノズル長１．０ｍｍ、ノズル径０．５ｍｍ、プランジャー圧力１０ｋｇｆの試験条件で測定した。
(4) Flow Viscosity The flow viscosity of the epoxy resin composition for semiconductor encapsulation was measured using a flow tester (manufactured by Shimadzu Corporation, model name: CFT-500) under the test conditions of a temperature of 175° C., a nozzle length of 1.0 mm, a nozzle diameter of 0.5 mm, and a plunger pressure of 10 kgf.
（５）ガラス転移温度
半導体封止用エポキシ樹脂組成物を、金型温度１８０℃、成形圧力８．０ＭＰａ、成形時間２分間の条件でトランスファー成形して、長さ１５ｍｍ×幅４ｍｍ×厚さ３ｍｍの成形品を作製し、さらに、１７５℃、８時間の後硬化を行って、試験片を得た。得られた試験片について、熱機械分析装置（（株）島津製作所製、型名：ＴＭＡ／ＳＳ１５０）を用いて、大気中で、昇温速度５℃／ｍｉｎの条件で、圧縮測定により分析を行い、熱機械分析（ＴＭＡ）曲線を得た。得られたＴＭＡ曲線の４０～８０℃の接線（平均線膨張係数α１）及び２２０～２４０℃の接線（平均線膨張係数α２）の交点における温度を読み取り、この温度をガラス転移温度（単位：℃）とした。
(5) Glass Transition Temperature The epoxy resin composition for semiconductor encapsulation was transfer molded under the conditions of a mold temperature of 180°C, a molding pressure of 8.0 MPa, and a molding time of 2 minutes to produce a molded product of 15 mm in length, 4 mm in width, and 3 mm in thickness, and then post-cured at 175°C for 8 hours to obtain a test piece. The obtained test piece was analyzed by compression measurement using a thermomechanical analyzer (manufactured by Shimadzu Corporation, model name: TMA/SS150) in air at a temperature increase rate of 5°C/min to obtain a thermomechanical analysis (TMA) curve. The temperature at the intersection of the tangent line (average linear expansion coefficient α1) from 40 to 80°C and the tangent line (average linear expansion coefficient α2) from 220 to 240°C of the obtained TMA curve was read, and this temperature was taken as the glass transition temperature (unit: °C).
（６）成形及び後硬化による成形収縮率
熱硬化性プラスチック一般試験方法（ＪＩＳ Ｋ６９１１－１９９５ ５．７成形収縮率及び加熱収縮率（成形材料））に準じて成形収縮率を測定した。
得られた半導体封止用エポキシ樹脂組成物を、金型温度１７５℃、成形圧力８．０ＭＰａ、硬化時間２分間の条件でトランスファー成形して、成形収縮率測定用テストピース（環状帯外径φ８０ｍｍ）を得た。この成形収縮率測定用テストピースの環状帯外径４ヶ所（表裏各２個所）の寸法を測定した。成形収縮率（％）は下記式によって算出し、成形による成形収縮率（成形収縮率Ａｓ）とした。
さらに、前記成形収縮率（成形収縮率Ａｓ）測定用テストピースについて１７５℃、８時間の後硬化を行った後、前記と同様にして、成形収縮率（％）を算出し、後硬化による成形収縮率（成形収縮率ＰＭＣ）とした。
成形収縮率（％）＝（（Ｄ１－ｄ１）／Ｄ１＋（Ｄ２－ｄ２）／Ｄ２＋（Ｄ３－ｄ３）／Ｄ３＋（Ｄ４－ｄ４）／Ｄ４）／４＊１００
ここで、ｄ１～４：それぞれの測定線に沿って測ったテストピース環状帯の外径（ｍｍ）
Ｄ１～４：２０±２℃の室温で測ったｄ１～４に対応する金型のみぞの外径（ｍｍ）
(6) Molding shrinkage due to molding and post-curing The molding shrinkage was measured according to the general test method for thermosetting plastics (JIS K6911-1995 5.7 Molding shrinkage and heat shrinkage (molding material)).
The obtained epoxy resin composition for semiconductor encapsulation was transfer molded under the conditions of a mold temperature of 175°C, a molding pressure of 8.0 MPa, and a curing time of 2 minutes to obtain a test piece for measuring mold shrinkage (annular band outer diameter φ80 mm). The dimensions of the annular band outer diameter of this test piece for measuring mold shrinkage were measured at four points (two points on each of the front and back). The mold shrinkage (%) was calculated by the following formula and was taken as the mold shrinkage due to molding (mold shrinkage As).
Furthermore, the test pieces for measuring the mold shrinkage (mold shrinkage As) were post-cured at 175° C. for 8 hours, and the mold shrinkage (%) was calculated in the same manner as above, and this was defined as the mold shrinkage due to post-curing (mold shrinkage PMC).
Mold shrinkage (%)=((D 1 −d 1 )/D 1 +(D 2 −d 2 )/D 2 +(D 3 −d 3 )/D 3 +(D 4 −d 4 )/D 4 )/4*100
Here, d 1 to d 4 : outer diameter (mm) of the test piece annular band measured along each measurement line
D 1 to 4 : Outer diameter (mm) of the die groove corresponding to d 1 to 4 measured at room temperature of 20 ± 2 ° C.
（７）曲げ強度及び曲げ弾性率
半導体封止用エポキシ樹脂組成物を、金型温度１８０℃、成形圧力８．０ＭＰａ、成形時間２分間の条件でトランスファー成形して、長さ４５ｍｍ×幅４ｍｍ×厚さ３ｍｍの成形品を作製し、さらに、１７５℃、８時間の後硬化を行って、試験片を得た。得られた試験片について、動的粘弾性試験装置（ティーエーインスツルメント社製、型名：ＤＭＡ Ｑ８００）を用いて、大気中で、昇温速度５℃／ｍｉｎ、周波数１０Ｈｚの条件で、分析を行い、２６０℃における曲げ強度及び曲げ弾性率を求めた。この値を、熱時曲げ強度及び熱時曲げ弾性率（単位：ＧＰａ）とした。
(7) Flexural strength and flexural modulus The epoxy resin composition for semiconductor encapsulation was transfer molded under the conditions of a mold temperature of 180°C, a molding pressure of 8.0 MPa, and a molding time of 2 minutes to produce a molded product of 45 mm in length, 4 mm in width, and 3 mm in thickness, and then post-cured at 175°C for 8 hours to obtain a test piece. The obtained test piece was analyzed in air at a temperature rise rate of 5°C/min and a frequency of 10 Hz using a dynamic viscoelasticity tester (manufactured by TA Instruments, model name: DMA Q800), to determine the flexural strength and flexural modulus at 260°C. The values were taken as the hot flexural strength and hot flexural modulus (unit: GPa).
（８）塩素抽出量
半導体封止用エポキシ樹脂組成物を、下記の条件で成形し、得られた成形品を粉砕して、１８０℃×２ｈ熱水抽出し、イオンクロマトグラフィー（サーモフィッシャーサイエンティフィック（株）社製、型名：ＩＣＳ－１１００）を用いて、塩素抽出量（イオン量）を測定した。
（成形条件）
金型温度：１７５±３℃、成形圧力：２．９４±０．２Ｍｐａ（ゲージ圧）、注入時間：１２±６ｓ、硬化時間：１８０ｓ、樹脂温度：９０±５℃、ポストキュア：１７５℃×８ｈ
(8) Chlorine Extraction Amount Each epoxy resin composition for semiconductor encapsulation was molded under the following conditions, and the obtained molded product was pulverized and extracted with hot water at 180°C for 2 hours. The chlorine extraction amount (amount of ions) was measured using ion chromatography (manufactured by Thermo Fisher Scientific K.K., model: ICS-1100).
(Molding condition)
Mold temperature: 175±3°C, molding pressure: 2.94±0.2 MPa (gauge pressure), injection time: 12±6 s, curing time: 180 s, resin temperature: 90±5°C, post cure: 175°C x 8 h
（９）比重
半導体封止用エポキシ樹脂組成物を、金型温度１８０℃、成形圧力８．０ＭＰａ、成形時間２分間の条件でトランスファー成形して、φ50mm×厚さ３ｍｍの成形品を作製し、さらに、１７５℃、８時間の後硬化を行って、試験片を得た。その試験片の比重を、ＪＩＳ Ｋ ６９９１に準拠して測定した。
(9) Specific Gravity The epoxy resin composition for semiconductor encapsulation was transfer molded under the conditions of a mold temperature of 180°C, a molding pressure of 8.0 MPa, and a molding time of 2 minutes to prepare a molded product of φ50 mm × thickness 3 mm, which was then post-cured at 175°C for 8 hours to obtain a test specimen. The specific gravity of the test specimen was measured in accordance with JIS K 6991.
（１０）吸水率
（９）で得られた試験片の吸水率を１２１℃、０．２５ＭＰａの飽和水蒸気にて２４時間処理（Ｐｒｅｓｓｕｒｅ Ｃｏｏｋｅｒ Ｔｅｓｔ）した前後の質量増加率から算出した（単位：％）。
(10) Water Absorption Rate The water absorption rate of the test piece obtained in (9) was calculated from the mass increase rate before and after treatment with saturated steam at 121° C. and 0.25 MPa for 24 hours (Pressure Cooker Test) (unit: %).
（１１）反りの評価
調製した封止用エポキシ樹脂組成物を用いて、１０ｍｍ×１０ｍｍ、厚さ１５０μｍのチップを搭載した評価用パッケージ（１５ｍｍ×１５ｍｍ、封止厚み：２５０μｍ、全体厚：３８０μｍ）を作製した。１７５℃で８時間のポストキュアを行った後、加熱装置に配置して装置内の温度を２５℃から昇温（昇温速度１０℃／２５秒）して２６０℃に達した後に２５℃まで降温（降温速度１０℃／２５秒）させる試験を行った。
２５℃における評価用パッケージの反りの状態と、反りの接地面からの最大高さ（ｍｍ）を測定した。ｓｍｉｌｅ型の反りを生じている場合の最大高さはマイナス値、ｃｒｙ型の反りを生じている場合の最大高さはプラス値として、以下の基準で評価した。
〇：発生した反りの絶対値が２ｍｍ未満
×：発生した反りの絶対値が２ｍｍ以上
(11) Evaluation of Warpage Using the prepared encapsulating epoxy resin composition, an evaluation package (15 mm x 15 mm, encapsulation thickness: 250 μm, total thickness: 380 μm) equipped with a chip of 10 mm x 10 mm and thickness of 150 μm was produced. After post-curing at 175°C for 8 hours, the package was placed in a heating device and a test was performed in which the temperature inside the device was increased from 25°C (temperature increase rate 10°C/25 seconds) to 260°C and then decreased to 25°C (temperature decrease rate 10°C/25 seconds).
The state of warping of the evaluation package and the maximum height (mm) of the warping from the ground surface were measured at 25° C. The maximum height when smile-type warping occurred was a negative value, and the maximum height when cry-type warping occurred was a positive value, and evaluation was performed according to the following criteria.
◯: The absolute value of the warp that occurred was less than 2 mm. ×: The absolute value of the warp that occurred was 2 mm or more.
（１２）充填性
上記の反り評価で用いた評価用パッケージ内に備えるチップ上の封止材を目視で観察し、該封止材の未充填箇所の有無を評価した。
〇：未充填箇所なし
×：未充填箇所あり
(12) Filling Property The encapsulant on the chip provided in the evaluation package used in the above warpage evaluation was visually observed to evaluate the presence or absence of any unfilled portions of the encapsulant.
〇: No unfilled areas ×: Some unfilled areas
エポキシ樹脂の塩素含有量が６００ｐｐｍ以下でイミダゾール系化合物の硬化促進剤を用いた実施例１～６は、エポキシ樹脂の塩素含有量が６００ｐｐｍ超でイミダゾール系化合物の硬化促進剤を用いた比較例１、と比較し、熱伝導率が高く、エポキシ樹脂の塩素含有量が６００ｐｐｍ以下でリン系の硬化促進剤を用いた比較例２及び３、エポキシ樹脂の塩素含有量が６００ｐｐｍ超でリン系の硬化促進剤を用いた比較例４、と比較し、熱伝導率が高く、フロー粘度が低く、成形収縮率が小さいことがわかる。 It can be seen that Examples 1 to 6, in which the epoxy resin has a chlorine content of 600 ppm or less and an imidazole-based compound curing accelerator is used, have higher thermal conductivity than Comparative Example 1, in which the epoxy resin has a chlorine content of over 600 ppm and an imidazole-based compound curing accelerator is used, and that Examples 1 to 6 have higher thermal conductivity, lower flow viscosity, and smaller molding shrinkage than Comparative Examples 2 and 3, in which the epoxy resin has a chlorine content of 600 ppm or less and a phosphorus-based curing accelerator is used, and Comparative Example 4, in which the epoxy resin has a chlorine content of over 600 ppm and a phosphorus-based curing accelerator is used.
本発明の半導体封止用エポキシ樹脂組成物は、特に熱伝導率が高く、高い放熱性を有し、狭部充填性が高く、反り量が少ないことから、発熱量の大きいＡＰ又はＧＰＵ等の半導体装置の封止材に適用することができる。 The epoxy resin composition for semiconductor encapsulation of the present invention has particularly high thermal conductivity, high heat dissipation properties, high narrow-area filling properties, and low warpage, and can therefore be used as an encapsulant for semiconductor devices such as APs or GPUs that generate a large amount of heat.
１：半導体素子
２：封止材
３：バンプ
４：支持基板
５：はんだボール
1: Semiconductor element 2: Sealing material 3: Bump 4: Support substrate 5: Solder ball
Claims (6)
前記（Ａ）エポキシ樹脂の塩素含有量が６００ｐｐｍ以下であり、
前記（Ａ）エポキシ樹脂は４，４’－ビフェニル型エポキシ樹脂及びテトラメチルビフェニル型エポキシ樹脂を含み、
前記（Ｂ）硬化剤はビフェニルアラルキル型フェノール樹脂を含み、
前記（Ｃ）硬化促進剤がイミダゾール系化合物を含む、半導体封止用エポキシ樹脂組成物。 An epoxy resin composition for semiconductor encapsulation, comprising: (A) an epoxy resin; (B) a curing agent; (C) a curing accelerator; and (D) an inorganic filler,
The chlorine content of the (A) epoxy resin is 600 ppm or less,
The (A) epoxy resin includes a 4,4'-biphenyl type epoxy resin and a tetramethylbiphenyl type epoxy resin,
The (B) curing agent contains a biphenyl aralkyl type phenolic resin,
The epoxy resin composition for semiconductor encapsulation, wherein the (C) curing accelerator contains an imidazole-based compound.
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