TWI791027B - 具有低頻射頻功率分佈調節功能的電漿反應器 - Google Patents
具有低頻射頻功率分佈調節功能的電漿反應器 Download PDFInfo
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- TWI791027B TWI791027B TW107122653A TW107122653A TWI791027B TW I791027 B TWI791027 B TW I791027B TW 107122653 A TW107122653 A TW 107122653A TW 107122653 A TW107122653 A TW 107122653A TW I791027 B TWI791027 B TW I791027B
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- ring
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Abstract
本發明提供一種具有低頻射頻功率分佈調節功能的電漿反應器,包括:一反應腔,反應腔內具有一導電基座,導電基座藉由一個第一匹配器連接到一個低頻射頻電源,導電基座上包括一個靜電夾盤,靜電夾盤上表面用於固定待處理基片,導電基座外側壁塗覆有至少一層耐電漿腐蝕的絕緣材料層,一個由絕緣材料製成的耦合環圍繞在基座外周圍,一個聚焦環設置在所述耦合環上方,所述聚焦環圍繞所述靜電夾盤並且在電漿處理過程中暴露於電漿體,還包括一個環形電極位於所述耦合環上方和聚焦環的下方,一導線第一端電連接到所述基座,第二端連接到所述環形電極,一可變電容串聯在所述導線上。
Description
本發明涉及半導體加工技術領域,具體涉及一種具有低頻射頻功率分佈調節功能的電漿反應器。
半導體晶片被日益廣泛的應用到各種電子設備中,其中半導體晶片加工過程需要用到大量電漿處理器,這些處理器會對待處理的基片進行電漿蝕刻及化學氣相沉積等製程。第1a圖是一個典型的用於電漿蝕刻的處理器,該處理器包括反應腔10,反應腔頂部包括一個絕緣材料窗,絕緣材料窗上方設置有電感線圈7,電感線圈7藉由一個射頻匹配器8連接到一個高頻(13MHz及以上)射頻電源6,還包括至少一個反應氣體源11經過閥門95和氣體噴頭90將反應氣體送入反應腔中,以形成電漿體對基片進行蝕刻。反應腔10內部下方包括一個基座20,基座藉由一個偏置射頻功率匹配器5連接到一個偏置射頻源4,其中偏置射頻源輸出的低頻射頻頻率一般低於2MHz。反應腔10底部還包括一個排氣裝置排出氣體,維持反應腔內低壓,一個閥門3藉由調節閥門開度調節內部氣壓大小。基座20通常由鋁合金進行表面陽極氧化製成,或者在鋁合金表面塗覆一層絕緣的耐腐蝕材料層,以避免被反應腔內的蝕刻氣體腐蝕,造成顆粒污染等一系列問題。基座上表面設置有一個靜電夾盤21用於固定基片22到靜電夾盤上表面。基座下部外圍還包括一個突出的臺階部,臺階部上設置有耦合環25,藉由對耦合環25的材料和形狀尺寸的選擇,改變基片邊緣區域耦合的射頻能量分佈。耦合環25上方設置有一個聚焦環23,其中聚焦環23內壁圍繞並緊貼基片22,
而且聚焦環23的上表面暴露到上方的電漿體。在電漿處理過程中偏置射頻功率被用來控制形成在基片上表面的和聚焦環上表面的鞘層厚度,鞘層的厚度決定了電漿體中的離子入射到基片的能量和方向。如果基片邊緣區域和聚焦環的鞘層不連續分佈的話會造成基片邊緣區域蝕刻速率和蝕刻方向(edge tilting)與基片中心區域的差別,降低基片加工均勻性,影響最終晶片的良率。
由於聚焦環23是長期保留在充滿蝕刻氣體的電漿體中的,所以在進行一定長度的電漿處理後聚焦環23表面材料必然會被腐蝕,因此聚焦環上表面的高度會隨之下降,下降的高度會嚴重影響基片邊緣區域鞘層的分佈和形態,為了抵消這種長期工作中產生的電漿處理效果漂移,需要設計對應的補償機構或方法。部分習知技術中將耦合環25或者聚焦環內部設為環形空腔,將絕緣液體通入這個空腔中,藉由調節絕緣液體的量或者成分來改變偏置射頻功率分佈到聚焦環上方的功率大小,從而補償聚焦環高度變化代理的處理效果漂移。這種方法需要在反應腔內設置絕緣液供應管路,零部件內部還需要保持氣密的情況下設置空腔,介電液位的高度也很難測量,所以在工程應用中使得部件結構更複雜成本更高,而且很難對電場分佈進行精確的微量調整。還有部分習知技術在反應腔內設置機械驅動裝置,驅動耦合環25或者聚焦環23可以微量上下運動,以改變基片邊緣區域的電場分佈,但是這種方法由於存在運動部件會帶來顆粒污染的問題,而且運動的耦合環25和聚焦環23的精確定位也是很大的問題,1mm以下的位置偏移都會導致基片上處理效果的不均勻分佈。上述兩種習知技術中的調節方法不僅存在各自的問題,而且還存在一個最嚴重的缺陷,上述調節方法對耦合到聚焦環23的低頻射頻功率的影響很小,也就是必須進行大幅度的調節才能有效改善功率分配。如第1b圖所示,輸入的低頻射頻功
率P0經過基座20與基片22之間的等效電容C11耦合P1’功率到基片,同時經過基座20到耦合環25和聚焦環23的等效電容C12耦合P2’到聚焦環25。其中C12的值非常小,而且很難調節,所以P2’會遠小於P1’且功率比例很難調。為了增加C12可以選擇鋁及碳化矽等高導電性的材料製造耦合環25,但是這種選擇一種材料來補償的方法只能補償一段時間,無法動態的補償由於聚焦環損耗帶來的處理效果漂移。
所以業內需要開發一種新的調節裝置,來微量精密調節低頻射頻功率在基片中心和基片邊緣區域的射頻功率分佈,從而改善基片處理製程的均勻性。最佳的,該調節裝置需要結構簡單及成本低廉,能夠應用於各種電漿處理裝置。
本發明提供了一種電漿反應器,能夠簡單有效的調整基片邊緣區域射頻功率,補償聚焦環長期使用中的損耗帶來的基片邊緣傾斜蝕刻(edge tilting)。本發明公開一種具有低頻射頻功率分佈調節裝置的電漿反應器,包括:一反應腔,反應腔內具有一導電基座,導電基座藉由一個第一匹配器連接到一個低頻射頻電源,導電基座上包括一個靜電夾盤,靜電夾盤上表面用於固定待處理基片,導電基座外側壁包括至少一層耐電漿腐蝕的絕緣材料層,一個由絕緣材料製成的耦合環圍繞在基座外周圍,一個聚焦環設置在所述耦合環上方,所述聚焦環圍繞所述靜電夾盤並且在電漿處理過程中暴露於電漿體,還包括一個環形電極位於所述耦合環上方和聚焦環的下方,一導線第一端電連接到所述基座,第二端連接到所述環形電極,一可變電容串聯在所述導線上。
其中所述低頻射頻電源輸出的射頻訊號的頻率小於13MHz,較佳地低頻射頻源輸出的射頻訊號的頻率小於2MHz。
所述反應器還包括一個進氣裝置和一個高頻射頻電源,高頻射頻電源輸出高頻射頻功率到所述反應腔,使得通入反應腔的反應氣體產生電漿體,其中高頻射頻電源輸出的射頻訊號的頻率大於13MHz。
本發明可以應用於電容耦合電漿反應腔(CCP),CCP反應腔頂部包括一個上電極,反應氣體藉由所述上電極被送入反應腔,所述高頻射頻電源連接到所述基座或者上電極。本發明也可以應用於ICP電漿反應腔,ICP反應腔頂部包括一個絕緣材料窗,一個電感線圈位於所述絕緣材料窗上方,所述高頻射頻電源藉由一個第二匹配器向所述電感輸送射頻功率。
本發明的可變電容設置在所述基座下方,較佳地,所述反應腔底部包括一個氣密隔板,可變電容位於所述氣密隔板下方的大氣環境中。所述反應腔壁由接地金屬組成,所述接地金屬包圍形成電場遮蔽空間,所述可變電容位於所述電場遮蔽空間內。
其中所述導電基座外側壁的耐電漿腐蝕的絕緣材料層由氧化鋁或者氧化釔製成,耦合環由氧化矽或氧化鋁製成。
本發明中電漿反應器的導電連接部也可以包括複數個分支導線,每根分支導線在聚焦環下方均勻分佈,且複數個分支導線的一端連接到所述環形電極另一端連接到共用的可變電容。或者複數個分支導線在聚焦環下方均勻分佈,且複數個分支導線的第一端連接到環形電極,另一端連接到基座,每根分支導線上串聯有各自的可變電容。進一步的,所述環形電極由複數個弧形導電片組成,每個弧形導電片之間包括間隙或者隔離部件,使得每個弧形導
電片互相電隔離,所述複數個導線第一端分別連接到所述複數個弧形導電片。從而實現對整個基片邊緣環形區域的鞘層厚度進行分區獨立調整。
4、40:偏置射頻源
5、50:偏置射頻功率匹配器
6、60:高頻射頻電源
7、70:電感線圈
8、80:射頻匹配器
10:反應腔
11、110:反應氣體源
20、120:基座
21、121:靜電夾盤
22、122:固定基片
23、123、123':聚焦環
25、125:耦合環
90:氣體噴頭
95:閥門
100:反應腔壁
124:可變電容
127、127':環形電極
129:導電部
C11、C12、C21、C22:等效電容
P0:低頻射頻功率
P1、P1’、P2、P2’:功率
第1a圖為習知技術電漿處理器示意圖;第1b圖為習知技術電漿處理器中低頻射頻功率分佈示意圖;第2a圖是本發明電漿處理器示意圖;第2b圖是本發明電漿處理器中低頻射頻功率分佈示意圖;第3圖是本發明電漿處理器另一實施例的示意圖;第4圖是本發明電漿處理器第三實施例的示意圖;以及第5圖是本發明電漿處理器第四實施例的示意圖。
以下結合第2a圖及第2b圖,進一步說明本發明的具體實施例。
經過發明人研究發現,當高頻的射頻功率被輸入基座120時射頻功率能夠輕易的耦合到聚焦環處,因為對於高頻訊號來說基座120表面的很薄(幾十微米)絕緣耐腐蝕層和耦合環125阻抗很小。但是對於低頻射頻訊號來說,較低的頻率導致同樣的絕緣層和耦合環125形成很大的阻抗,這一阻抗導致只有很少的低頻射頻能量能耦合到聚焦環123,即使採用各種手段調節耦合環與聚焦環的介電常數及位置,最終可調的範圍仍然有限。因為基座120側壁的絕緣耐腐蝕層必不可少,而且耦合環通常選擇絕緣材料,如氧化鋁或者氧化矽材料製成,所以在現有硬體結構下無法將低頻射頻功率可調的分配到基片邊緣的聚焦環123上。其中耦合環也可以選擇高導電材料製成,但是這種耦合環只能在短時間內取得較好的蝕刻效果,時間一長仍然無法補償聚焦環損耗帶來的處理效
果漂移。而且高導電性的耦合環除了影響低頻射頻功率的分佈也會同時影響高頻射頻功率的分佈,也就影響了電漿濃度的分佈,所以為了聚焦環上方鞘層厚度的調整反而造成電漿濃度分佈不均勻,也無法改善整體的電漿處理效果。聚焦環123通常是由石英及氧化鋁等絕緣材料或者碳化矽及矽等半導體材料製成,以避免電漿處理過程中產生的顆粒污染基片,同時提供足夠的導電性。
基於這一發現,本發明提出了如第2a圖所示的一種新的電漿處理腔,其基本結構與第1a圖所示的習知技術相同,主要區別在於將低頻射頻功率利用一導電連接部,其中導電連接部典型是一根導線,所述導線直接引導到耦合環上方及聚焦環的下方,同時導線上還串聯有一個可變電容124。如第2a圖所示,一個環形電極127設置在耦合環125上方,聚焦環設置在環形電極上,導線的第一端與環形電極127直接電連接,另一端與基座120直接電連接,導線中間還串聯有一個可變電容124,藉由調節可變電容124的電容值來調節輸送到聚焦環的低頻射頻功率。環形電極127可以是任何導電材料製成的,如鋁及石墨等,只要能提供良好導電性的材料均可。本發明的可變電容可以設置在導電基座120下方的真空空間中,最佳的可以將可變電容124設置到反應腔內氣密隔板下方的大氣環境中,只要使導線兩端穿過氣密隔板就可以了,設置在大氣環境的可變電容更容易散熱也更容易維護。反應腔壁100由接地金屬組成,接地金屬包圍形成電場遮蔽空間,只要本發明可變電容124在反應腔的電場遮蔽空間內,即使是在氣密隔板下方的大氣環境中仍然可以避免可變電容124向外部環境輻射低頻電場。相對必須在真空反應腔內設置液體進出管道和機械驅動裝置的習知技術而言。本發明的不僅可變電容體積小且成本低,而且安裝結構簡單。
如第2b圖所示為本發明的等效電路圖和射頻功率分佈圖,本發明中耦合到中心基片的等效電容C21仍然很大,所以主要功率能夠耦合到基片,基座120經過側壁耐腐蝕絕緣層和耦合環125到聚焦環123的等效電容C22亦然很小,無法傳輸較大功率的射頻功率。可變電容124不是藉由傳統的耦合的方式傳遞射頻功率,而是藉由直接電連接的方式將基座120中的射頻功率直接引導到了目標聚焦環123的下表面處,所以繞過了嚴重影響低頻射頻功率耦合的阻抗。其中可變電容124可以根據需要自行選擇取值範圍和調節範圍,所以本發明的可變電容124藉由簡單的調節容值就可以有效的調節輸送到聚焦環123的低頻射頻功率。當反應腔處於初始狀態時可變電容處於初始值,進行長時間的電漿處理後,檢測到基片邊緣區域的處理效果與中心不同,控制器可以根據設定參數,實時自動改變可變電容的數值,使得更多低頻射頻功率被輸送到基片邊緣的聚焦環,進而抬高聚焦環處的鞘層,使得基片邊緣到聚焦環上方具有相同高度的鞘層,改善蝕刻均一性。其中處理效果中最典型的是基片邊緣區域蝕刻孔的傾斜度(edge tilting),一旦聚焦環上表面沒損耗導致高度下降,相應的會使得邊緣區域的鞘層降低,因此基片邊緣區域的蝕刻孔會出現傾斜向內方向的傾斜角度。繼續檢測基片處理的效果,直到處理效果的均一性再次偏移超出預設的閥值,根據檢測到的數據再次調整可變電容的容值。這樣本發明就可以在長期不更換聚焦環的情況下,只需要改變可變電容的參數設定而不需要真空環境中的液體管道或機械驅動裝置就能長期保持電漿效果的穩定。
本發明除了可以應用於第1a圖、第1b圖、第2a圖及第2b圖所示的電感耦合電漿處理器外(ICP),也可以應用於電容耦合電漿處理器(CCP),電容耦合處理器的反應腔頂部不是絕緣材料窗而是一個導電的上電極,上電極
呈扁平的噴淋頭狀,反應氣體藉由上電極被送入下方的反應區域。高頻射頻射頻功率(13MHz以上,如27MHz、60MHz等)可以被輸送到作為下電極的基座120,此時上電極接地,也可以將上述高頻射頻功率輸送到上電極。在電容耦合電漿反應器中耦合環和聚焦環的介電參數會同時影響高頻和低頻射頻功率的分佈,藉由本發明設置的導電路徑可以使得高頻射頻功率主要藉由耦合的方式將射頻功率輸送到聚焦環123,低頻功率一部分藉由耦合環125耦合到聚焦環123,另一部分可調的功率藉由直接導通的方式將低頻射頻功率輸送到聚焦環123,所以本發明還具有分別單獨調控高頻和低頻射頻功率的作用,能夠更精確的調整基片上表面中心到邊緣的電漿濃度分佈(高頻功率主導)和鞘層分佈(低頻功率主導)。
本發明能夠在習知技術中原有耦合環耦合低頻射頻能量之外,補充設置一個,結構簡單,功率可調的低頻射頻能量供應電路。下電極藉由耦合環耦合到聚焦環的等效電容C22和本發明添加的可變電容124共同決定分配到聚焦環的低頻射頻功率大小。其中最佳的可以選擇絕緣材料製成耦合環,這樣C22較小,加上可變電容124可以使得電容調節範圍更大。如果耦合環125採用高導電材料製成也能實現本發明效果,只是C22加124的等效電容的調節範圍略微不同。
介電材料層對低頻射頻訊號的阻抗很大,即使的很薄的耐電漿腐蝕塗層(Al2O3、Y2O3等組成)也會明顯影響低頻射頻功率耦合到基片邊緣聚焦環的功率。當基座120側壁的絕緣層和耦合環的材料厚度及成分不同時,對應的射頻頻率也會不同。特別是厚度更厚時,或者耦合環介電係數更高時,相應的會使得更高頻率值的低頻功率無法有效輸送到聚焦環。所以本發明中的低頻射
頻訊號通常是低於2MHz的,特別是低於1MHz如400KHz時效果最明顯。但是只要應用場合需要,高於2MHz的射頻訊號如13MHz也可以採用本發明的繞接導線的結構使得低頻射頻功率被有效且可調的輸送到聚焦環。
如第3圖所示,本發明還提供另一個實施例,基本結構與第2a圖及第2b圖所示的第一個實施例相同,主要的區別在於,可變電容124除了藉由導線直接連接到下電極120以外,也可以是連接到一個位於下電極120的臺階部上表面之上和耦合環125之下的由導體材料製成的導電部129,下電極的低頻射頻功率藉由耦合越過臺階部上表面的絕緣材料層輸入到導電部129,再藉由導線和可變電容124將低頻功率輸送到環形電極127。其中導電部可以是環形也可以是複數個分離的導體,環繞下電極側壁。在電漿處理裝置中輸入到下電極的電場主要是向上耦合到反應腔頂部,所以習知技術中從下電極橫向耦合到聚焦環123的等效電容C12很小,本發明中導電部129是水平方向延伸的導體,從下電極臺階部向上的電場線能夠大量穿過臺階部頂表面的絕緣耐腐蝕材料層到達導電部,所以等效電容遠大於習知技術中的C12。所以本發明第二實施例藉由在臺階部頂表面設置電場耦合的導電部129,可以將低頻電場引導到位於耦合環125上方的環形電極127,從而能夠調節基片邊緣區域的低頻射頻能量大小。
本發明的導線下端可以直接電連接導電基座120,也可以是耦合到導電基座的上述導電部129。另一方面,導線的上端除了連接到位於耦合環125和聚焦環123之間的環形電極,環形電極也可以埋設入聚焦環123中,或者如第5圖所示實施例中,環形電極127’埋設入絕緣材料製成的耦合環125的上半部中,這樣雖然從下電極120耦合到聚焦環123的等效電容小於第2a圖及第2b圖所示可變電容124的值,但也遠大於第1b圖所示的習知技術中的C12,所以也能實現本
發明目的。如第4圖所示的實施例,當聚焦環123’採用導體或者半導體材料(矽、碳化矽及鋁等)製成時,聚焦環123’本身就可以作為本發明的環形電極,所以此時導線的上端可以直接連接到聚焦環123’。
此外本發明所述跨接的導電連接部也可以是由複數個的複數個分支導線組成的,最佳的在基座外圍均勻對稱分佈的複數個分支導線,使得複數個分支導線中每個分支導線與相鄰分支導線具有相同的距離並且連接到環形電極不同區域。下面以三根分支導線為例說明本發明的其它實施例,每根分支導線一端連接到環形電極,另一端共同連接到一個可變電容,再藉由可變電容上連接的導線連接到基座。或者每根分支導線均兩端均連接到導電基座和環形電極,三根分支導線上串聯三個獨立可調的可變電容,藉由調整這三個可變電容使得低頻功率能夠從三根分支導線上均勻分配到環形電極上。進一步的可以使環形電極分為三段弧形導電片,共同圍繞形成環形電極,每個弧形導電片之間存在間隙或隔離部件實現互相電隔離,藉由獨立調整上述三個可變電容可以分區調整聚焦環上不同區域的鞘層厚度,解決基片邊緣環狀區域中部分方位的鞘層不均的問題。
本發明中所述的可變電容是最佳實施例,但是其它能夠調節低頻射頻功率阻抗的任何可變阻抗裝置,如包括可變電感及電容組成的混合電路或者其它元器件組合而成的電路均可以實現阻抗調節的功能,上述替換屬共通知識,所以不再一一列舉。
儘管本發明的內容已經藉由上述較佳地實施例作了詳細介紹,但應當認識到上述的描述不應被認為是對本發明的限制。在本領域具有通常知識
者閱讀了上述內容後,對於本發明的多種修改和替代都將是顯而易見的。因此,本發明的保護範圍應由所附的申請專利範圍來限定。
40:偏置射頻源
50:偏置射頻功率匹配器
60:高頻射頻電源
70:電感線圈
80:射頻匹配器
90:氣體噴頭
95:閥門
100:反應腔壁
110:反應氣體源
120:基座
121:靜電夾盤
122:固定基片
123:聚焦環
124:可變電容
125:耦合環
127:環形電極
Claims (20)
- 一種具有低頻射頻功率分佈調節功能的電漿反應器,其包括:一反應腔,該反應腔內具有一導電基座,該導電基座藉由第一匹配器連接到一低頻射頻電源,該導電基座上包括;一靜電夾盤,該靜電夾盤上表面用於固定待處理基片,一耦合環,圍繞在該導電基座外周圍;以及一聚焦環,設置在該耦合環上方,該聚焦環圍繞該靜電夾盤並且在電漿處理過程中暴露於電漿體,進一步包括一環形電極,位於該耦合環上方;一導電連接部,該導電連接部包括至少一導線,該導線的第一端電連接到該導電基座或者電連接到與該導電基座電耦合的一導電部,該導線的第二端電連接到該環形電極,一可變阻抗裝置串聯在該導線上;其中,經由該導電連接部將該導電基座中的射頻功率直接施加到該環形電極,該導線與該低頻射頻電源無直接電連接。
- 如申請專利範圍第1項所述的電漿反應器,其中該導電基座外圍下方包括一臺階部,該導電部位於該導電基座的該臺階部上方,該耦合環由絕緣材料製成且設置在該導電部上方,該導電基座外側壁包括至少一耐電漿腐蝕的絕緣材料層。
- 如申請專利範圍第1項所述的電漿反應器,其中該環形 電極位於該聚焦環下方。
- 如申請專利範圍第1項所述的電漿反應器,其中該聚焦環由絕緣材料製成,該環形電極埋設於該聚焦環內。
- 如申請專利範圍第1項所述的電漿反應器,其中該環形電極埋設於該耦合環內上半部。
- 一種具有低頻射頻功率分佈調節功能的電漿反應器,其包括:一反應腔,該反應腔內具有一導電基座,該導電基座藉由第一匹配器連接到一低頻射頻電源,該導電基座上包括:一靜電夾盤,該靜電夾盤上表面用於固定待處理基片;一耦合環,圍繞在該導電基座外周圍;以及一聚焦環,設置在該耦合環上方,該聚焦環圍繞該靜電夾盤並且在電漿處理過程中暴露於電漿體,該聚焦環由導體或者半導體材料製成,進一步包括至少一導線,該導線的第一端電連接到該導電基座或者電連接到與該導電基座電耦合的一導電部,該導線的第二端電連接到該聚焦環,一可變阻抗裝置串聯在該導線上;其中,經由該導線將該導電基座中的射頻功率直接施加到該聚焦環,該導線與該低頻射頻電源無直接電連接。
- 如申請專利範圍第1項至第6項中任一項所述的電漿反應器,其中該低頻射頻電源輸出的射頻訊號的頻率小於13MHz。
- 如申請專利範圍第7項所述的電漿反應器,其中該低頻射頻電源輸出的射頻訊號的頻率小於2MHz。
- 如申請專利範圍第1項至第6項中任一項所述的電漿反應器,其進一步包括一進氣裝置和一高頻射頻電源,該高頻射頻電源輸出高頻射頻功率到該反應腔,使得通入該反應腔的反應氣體產生該電漿體,其中該高頻射頻電源輸出的射頻訊號的頻率大於13MHz。
- 如如申請專利範圍第9項所述的電漿反應器,其中該反應腔頂部包括:一絕緣材料窗;一電感線圈,位於該絕緣材料窗上方,該高頻射頻電源藉由一第二匹配器向該電感線圈輸送射頻功率。
- 如如申請專利範圍第9項所述的電漿反應器,其中該反應腔頂部包括一上電極,反應氣體藉由該上電極被送入該反應腔,該高頻射頻電源連接到該導電基座或該上電極。
- 如申請專利範圍第1項至第6項中任一項所述的電漿反應器,其中該可變阻抗裝置包括至少一可變電容或至少一可變電感。
- 如申請專利範圍第12項所述的電漿反應器,其中該可變阻抗裝置在該導電基座下方,該反應腔底部包括一氣密隔板,該可變阻抗裝置位於該氣密隔板下方的大氣環境中。
- 如申請專利範圍第13項所述的電漿反應器,其中該反應腔壁由一接地金屬組成,該接地金屬包圍形成一電場遮蔽空間,該可變阻抗裝置位於該電場遮蔽空間內。
- 如申請專利範圍第2項所述的電漿反應器,其中該耐電漿腐蝕的絕緣材料層由氧化鋁或氧化釔製成。
- 如申請專利範圍第1項至第6項中任一項所述的電漿反應器,其中該耦合環由氧化矽或氧化鋁製成。
- 如申請專利範圍第1項至第5項中任一項所述的電漿反應器,其中該電漿反應器的該導電連接部包括複數個分支導線,每一該分支導線均包括一端連接到該環形電極,且該複數個分支導線連接到該環形電極的不同區域,每一該分支導線進一步包括另一端連接到該可變阻抗裝置,藉由該可變阻抗裝置連接到該導電基座或該導電部。
- 如申請專利範圍第1項至第5項中任一項所述的電漿反應器,其中該電漿反應器包括複數個分支導線,該複數個分支導線在該聚焦環下方均勻分佈,且每一該分支導線的第一端連接到該環形電極,另一端連接到該導電基座或該導電部,每一該分支導線上串聯有各自的該可變阻抗裝置。
- 如申請專利範圍第18項所述的電漿反應器,其中該環形電極由複數個弧形導電片組成,每一該弧形導電片之間包括間隙或者隔離部件,使得每一該弧形導電片互相電隔離,該複數個分支導線的第一端分別連接到該複數個弧形導電片。
- 一種應用於如申請專利範圍第1項至第6項中任一項所述的電漿反應器的低頻射頻功率分佈調節方法,包括步驟:一基片蝕刻效果監測步驟:檢測基片邊緣區域的蝕刻效果, 如果基片邊緣蝕刻孔傾斜角度在預設角度範圍內,則繼續執行該基片蝕刻效果監測步驟,如果基片邊緣蝕刻孔傾斜超過預設角度,則進入一可變阻抗裝置調整步驟;該可變阻抗裝置調整步驟:調整該可變阻抗裝置的阻抗參數,使得被輸送到基片邊緣聚焦環的低頻射頻功率改變,並再次進入該基片蝕刻效果監測步驟。
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CN109216144A (zh) | 2019-01-15 |
KR102045484B1 (ko) | 2019-11-15 |
US20190006155A1 (en) | 2019-01-03 |
CN109216144B (zh) | 2021-08-06 |
KR20190004231A (ko) | 2019-01-11 |
TW201907760A (zh) | 2019-02-16 |
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