201127222 六、發明說明： 【發明所屬之技術領域】 本發明關於一種對被處理體實施電漿處理的電聚 處理裝置，特別是關於高頻天線。 【先前技術】 作為激發電漿而對被處理體進行微細加工的裝 置，已知有電容耦合型電漿處理裝置、感應耦合型電漿 處理裳置、微波電聚處理裝置等。其中，感應耦合型電 漿(ICP : Inductively Coupled Plasma)處理裂置係在执置 於處理容器頂面的介電體窗處設置高頻天線，天線之線 圈流通有高頻電流而於線圈周圍產生電磁場，電場能量 經由介電體窗導人處理容器内，並藉由該電場能; 發氣體以產生電漿（參考例如專利文獻：日本專利特開 2007-311182 號公報）〇 ' 、一專利文獻中，高頻天線係由外周側與内周側的2個 渦卷狀線圈而形成為平面狀。2個渦卷狀線圈會分割電 2率，藉以調整處理室内所形成之感應耗合電‘的; 达、度分佈。 &而，前述形狀之高頻天線中，藉由外周側盥内周 ^，線®所獲得之圓形電流組態會產生出2個甜甜 =會降低，其結果，會使得對被處理趙二 面内均勻性降低。另外，根據壓力等電黎條件會使 201127222 電漿密度產生變化，難以確保電漿的均勻性。 特別是，近年來，隨著被處理體之大型化，裝置亦 大型化。因此，大型電漿處理裝置中，需於更寬廣的電 漿激發空間來均勻地產生電漿，而電漿均勻性之確保卻 成為更加困難的狀況。 有鑑於前述問題，本發明之目的係提供一種能提高 電漿密度乃至提高電漿處理特性之面内均勻性的電漿 處理裝置。 【發明内容】 為了解決前述問題，依本發明之一樣態係提供一種 電漿處理裝置，具備有：處理容器，係可於内部對被處 理體施以電槳處理，苐1 ifj頻電源’係輸出向頻，1¾頻 天線，係於該處理容器外部處，將外側線圈、内側線圈 及設置於該等之間的η個（η為1以上之整數）中間線 圈相對中心軸呈同心狀捲繞所形成；以及介電體窗，係 設置於該處理容器之開口部，以將從該高頻天線所產生 之電磁場能量導入該處理容器内。 依前述結結構，高頻天線具有相對中心軸呈同心狀 捲繞而成的外側線圈、内側線圈以及設置於該等之間的 η個(η為1以上的整數）中間線圈。其結果，於電漿激發 區域内除了内側線圈及外側線圈之外，亦可藉由η個 (ng 1)中間線圈來產生電漿。因此，僅由2個線圈來產 生電漿之情況下所產生之線圈間的中間區域處，其電漿 4 201127222 密度不會衰弱，可達成全體之電漿的均勻化。藉此，可 確保被處理體之處理面内均勻性。 亦可具備有電功率分割部，係至少設置於該外側線 圈及该内側線圈之間’將從該第1高頻電源所輸出之高 頻電功率以所期望之比例進行分割並供給至各線圈。 例如’最初於外側線圈施加最大電功率的高頻電 力/、k於内側線圈施加較小的高頻電力，最後於中 間線圈施加剩餘之高頻電功率。 辟於被處理體邊緣侧，電漿中之電子或離子會擴散至 蔗而消滅，故電漿密度會有偏低的傾向。考慮此點，最 於外侧線圈施加最大電功率的電功率，以使得外侧 =水检度為最高。藉此，可防止被處理體邊緣部之蝕刻 率下t等。藉由電功率分割部所分割後的殘餘高頻電功 '再分割並施加給内側線圈及中間線圈。 史其結果’可進行控制以使得電漿激發區域中，外側 電聚密度較全體電漿密度偏高，同時可防止内側與外 欠之間的中央部分處的電漿密度降低，以達成全體電漿 二句化。藉此，可保持被處理體之處理面内均勻性。 ^ 該1電功率分割部亦可設置於該各線圈之間，將從該 1同頻電源所輸出之高頻電功率各自以所期望之比 呵進行分割並供給至各線圈。 ^ 該各線圈之至少任一者亦可為能改變與該介電體 _之間距離的可動式結構。 於2個線圈之間未設置有該電功率分割部之情 201127222 況，該2個線圈中任一者亦可為可動式結構。 該2個以上之電功率分割部亦可相對該中心軸而 呈對稱之方式設置。 該2個以上之電功率分割部亦可相對該中心軸而 呈非對稱之方式設置，且藉由遮蔽組件來加以遮蔽。 該外側線圈、該内側線圈及該中間線圈可各自由複 數個線圈所形成；形成該外側線圈之複數個線圈的各供 電點可設置於相對該中心軸而呈對稱之位置處；形成該 中間線圈之複數個線圈的各供電點可設置於相對該中 心軸而呈對稱之位置處；形成該内側線圈之複數個線圈 的各供電點可設置於相對該中心軸而呈對稱之位置處。 該各線圈之供電點亦可相對該中心軸呈180°、 120°、90°、72°、60°中任一種間隔方式而加以設置。 該各線圈亦可各自介設有阻隔電容。 該2個以上之電功率分割部亦可具有可變電容。 亦可具備有：測量器，係針對供給至該各線圈之高 頻電流、電壓、相位中至少任一者進行測量；以及控制 裝置，係根據該測量器所測量出之高頻電流、電壓、相 位中至少任一者來控制於該電功率分割部進行分割之 電功率比例。 該控制裝置亦可具有記憶體，會根據預先記憶於該 記憶體之製程配方來控制於該電功率分割部進行分割 之電功率比例。 亦可具備有輸出高頻之第2高頻電源；該外側線 6 201127222 圈、該内側線圈及該中間線圈中任一者可連接至該第1 南頻電源，未連接至該弟1 rlj頻電源的剩餘2個線圈則 可連接至該第2高頻電源；更可具備有將從該第2高頻 電源所輸出之高頻電功率以所期望之比例進行分割並 供給至該剩餘2個線圈的電功率分割部。 該第1高頻電源可連接至該外側線圈，該第2高頻 電源可連接至該内側線圈及該中間線圈。 亦可具備有輸出高頻之第2及第3高頻電源；該外 側線圈、該内側線圈及該中間線圈中任一者可連接至該 第1高頻電源；未連接至該第1高頻電源的剩餘2個線 圈中的一者可連接至該第2高頻電源，剩餘2個線圈中 的另一者則可連接至該第3高頻電源。 依以上說明之本發明，可提高電漿密度乃至電漿處 理特性之面内均勻性。 【實施方式】 以下參考添附圖式來詳細說明本發明之較佳實施 形態。 另外，本說明書及圖式中，對於具有實質相同功能 結構之構成要件，係賦予相同符號並省略重複說明。 <第1實施形態> (電漿處理裝置之整體結構） 首先，參考圖1及圖2來說明本發明第1實施形態 之電漿處理裝置的整體結構。圖1係感應耦合型電漿處 201127222 圖2係高頻天線結構的說明 理裝置之概略縱剖面圖 圖。 如圖1所+，Vr Ϊ， „ . y、例如’蝕刻裝置等電漿處理裝置10 進行針。對從閘閥gv所搬入之晶圓w 算全屬:广处理谷器ι〇0為圓筒狀形狀’由例如鋁 成’並呈接地狀態。處理容器刚内壁經陽 極乳化處理。另外，處理容器1〇〇内壁亦可由石英或氧 匕釔(Yttria)等介電體加以覆蓋。 、/ 處理容器1GG頂面於處理容器謂之開口部喪入有 介電體窗105，藉以維持處理容器内部空間^氣密 性。介電體窗1G5為氧化崔呂或石英等所形成的正圓ς =介電體窗105轉高似線⑽所鼓的電磁場能 里穿透，以將s亥能量導入至處理容器1〇〇内。 ^介電體窗105下方面埋設有淋氣板110。淋氣板110 设置有氣體導入管110a。氣體導入管u〇a可藉由於晶 圓W側形成開口之多數個氣體孔丨丨〇 b來將氣體喷出至 處理容器100内。氣體導入管110a係從處理容器1〇〇 頂面中央處朝向外部延❹貫穿，以連接至氣體供°給源 115。 介電體窗105於大氣側設置有高頻(Rf)天線12〇。 如圖2所示’將介電體窗105表面假想地晝分成外側區 域、内侧區域以及t間區域，且將通過介電體窗1〇5中 心的轴定義為令心軸〇。 而頻天線120具有：設置於外側區域之外側線圈 8 201127222 120a、設置於内側區域的内側線圈120c、以及設置於中 間區域的中間線圈120b。外側線圈12〇a、中間線圈 120b、内侧線圈120c係相對於中心軸〇而呈同心圓狀 設置。 另外，各線圈120a〜120c雖為繞行各區域約一圈 之樣態，但並非限定於此，亦可繞行複數圈。又，本實 施形態中，中間區域係設置有丨個，但並非限定於此， 亦可分割成2個以上之區域，且於各中間區域一對一地 設置有中間線圈。 各線圈120a〜12〇c之一端各自連接有供電棒125& 〜125c。供電棒125a〜125c則經由匹配器135連接至 第1高頻電源140。從第i高頻電源刚輸出之高頻電 功率會通過匹配器135、各供電棒125a〜125e而施加給 各線圈12Ga〜12Ge，藉以讓高頻電流流通至各線圈 〜12〇c 〇 士琛園uua〜lzuc &間介設有電功率分割部 。電功率分_ 13〇具村變阻抗魏(例如可變電 職。相天線魏健具有相線圈120a 130^ ° +間天線電路係由可變阻抗―ed繼)電路 阻抗電中間線圈腿所構成。内側天線電路則由可變 所構ί路130a與可變阻抗電路130b與内側線圈1施 功能 吁變阻抗電路130a、130b 。即’藉由調節可變阻抗電 具有作為阻抗調整部的 路130a之電容，以如 201127222 後述般地鑛中内側天線電_阻抗，便可控 =外側天線電路、以及流通於中間與内側^‘ 電流之比例。同樣地，藉由調節可變阻抗電路130b = 電谷’以控制中間天線電路與内侧天線電路之阻抗 =制流通於中間天線電路與_天線電路的電流之 如此，可變阻抗電路13Ga、⑽便具有分 ^功能，能將從第i高頻電源⑽所輸出之高 率以所期望之關騎分㈣供給至各線圈。另外 =可變電容至少是設置於外側線_ 12〇a及内側線圈 C之間處即可，但如本實鄉態般地設置於各線圈之 間，則可提高電功率之分割控制的精度。 依前述結構，電漿處理中，將來自第！高頻電源 140之例如13.56MHZ的高頻電功率供給至高頻天線 no，使+高頻電流流通至高頻天線120之各線圈i2〇a〜 12〇c。藉此，於線圈周圍會產生電磁場，並經由介電體 窗105將電場能量導入至處理容器1〇〇内。導入後之能 量會將氣體激發，藉以產生電漿。此時之電漿密度分= 可藉由以可變阻抗電路13〇a、13〇b來控制外側線圈 120a、中間線圈i2〇b、.内侧線圈12此的阻抗之方式來 加以控制，關於此點如後詳述。 外側線圈120a、中間線圈12〇b、内側線圈12沘之 另一端部則各自經由阻隔電容145a〜145c而形成接地 狀態。關於阻隔電容145a〜145c之功能容待後述。 201127222BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electropolymerization apparatus for performing plasma treatment on a target object, and more particularly to a high frequency antenna. [Prior Art] A capacitive coupling type plasma processing apparatus, an inductively coupled plasma processing apparatus, a microwave electropolymerization apparatus, and the like are known as an apparatus for performing microfabrication of a target to be excited by a plasma. The ICP (Inductively Coupled Plasma) treatment cleavage system is provided with a high frequency antenna at a dielectric window placed on the top surface of the processing container, and the antenna coil has a high frequency current flowing around the coil. The electromagnetic field, the electric field energy is guided into the container through the dielectric window, and the electric field energy is generated by the electric field; the gas is generated to generate the plasma (refer to, for example, Japanese Patent Laid-Open Publication No. 2007-311182), a patent document. In the middle, the high-frequency antenna is formed in a planar shape by two spiral coils on the outer circumference side and the inner circumference side. The two scroll coils divide the electrical rate to adjust the distribution of the induced power generated in the processing chamber. & However, in the high-frequency antenna of the above shape, the circular current configuration obtained by the outer circumference side inner circumference ^, line ® will produce 2 sweetness = will be reduced, and as a result, the pair will be processed The uniformity of Zhao's surface is reduced. In addition, according to the pressure and other conditions, the plasma density of 201127222 will change, and it is difficult to ensure the uniformity of the plasma. In particular, in recent years, as the size of the object to be processed has increased, the size of the device has also increased. Therefore, in a large-scale plasma processing apparatus, it is necessary to uniformly generate plasma in a wider plasma excitation space, and the uniformity of plasma is more difficult. In view of the foregoing, it is an object of the present invention to provide a plasma processing apparatus which can increase the plasma density and even improve the in-plane uniformity of plasma processing characteristics. SUMMARY OF THE INVENTION In order to solve the above problems, according to the present invention, a plasma processing apparatus is provided, which is provided with a processing container capable of internally applying an electric paddle treatment to a to-be-processed body, and if1 ifj frequency power supply system The output frequency-frequency, 13⁄4-frequency antenna is external to the processing container, and the outer coil, the inner coil, and the n (n is an integer of 1 or more) intermediate coils disposed between the two are concentrically wound with respect to the central axis. And a dielectric window disposed at an opening of the processing container to introduce electromagnetic field energy generated from the high frequency antenna into the processing container. According to the above-described junction structure, the radio-frequency antenna has an outer coil that is concentrically wound with respect to the central axis, an inner coil, and n (n is an integer of 1 or more) intermediate coils provided between the antennas. As a result, in addition to the inner coil and the outer coil in the plasma excitation region, plasma can be generated by n (ng 1) intermediate coils. Therefore, at the intermediate portion between the coils generated in the case where only two coils are used to generate plasma, the density of the plasma 4 201127222 is not weakened, and the plasma uniformity can be achieved. Thereby, the in-plane uniformity of the processed body can be ensured. An electric power dividing unit may be provided at least between the outer coil and the inner coil. The high-frequency electric power output from the first high-frequency power source is divided and supplied to each coil at a desired ratio. For example, 'the high-frequency electric power that initially applies the maximum electric power to the outer coil, k applies a small high-frequency electric power to the inner coil, and finally applies the remaining high-frequency electric power to the intermediate coil. On the edge of the treated body, electrons or ions in the plasma will diffuse to the cane and disappear, so the plasma density tends to be low. Taking this into consideration, the electric power of the maximum electric power is applied to the outer coil so that the outer side = water temperature is the highest. Thereby, it is possible to prevent the etching rate of the edge portion of the object to be processed from being t or the like. The residual high frequency electric power divided by the electric power dividing unit is subdivided and applied to the inner coil and the intermediate coil. The result can be controlled so that the outer electropolymer density is higher than the overall plasma density in the plasma excitation region, and the plasma density at the central portion between the inner side and the outer side is prevented from being lowered to achieve the total electricity. Slurry two sentences. Thereby, the in-plane uniformity of the processed body can be maintained. ^ The electric power dividing unit may be disposed between the coils, and the high-frequency electric power output from the one-frequency power source is divided into a desired ratio and supplied to each coil. ^ At least one of the coils may be a movable structure capable of changing the distance from the dielectric body. The electric power splitting portion is not provided between the two coils. 201127222 Any one of the two coils may be of a movable structure. The two or more electric power dividing units may be provided symmetrically with respect to the central axis. The two or more electric power dividing portions may be disposed asymmetrically with respect to the central axis and shielded by the shielding member. The outer coil, the inner coil and the intermediate coil may each be formed by a plurality of coils; each of the plurality of coils forming the outer coil may be disposed at a position symmetrical with respect to the central axis; forming the intermediate coil Each of the plurality of coils may be disposed at a position symmetrical with respect to the central axis; and each of the plurality of coils forming the inner coil may be disposed at a position symmetrical with respect to the central axis. The feed points of the coils may also be provided in any one of 180°, 120°, 90°, 72°, and 60° with respect to the central axis. Each of the coils may also be provided with a blocking capacitor. The two or more electric power dividing units may have variable capacitance. The measuring device may be configured to measure at least one of a high-frequency current, a voltage, and a phase supplied to the coils, and a control device based on the high-frequency current and voltage measured by the measuring device. At least one of the phases controls the electric power ratio at which the electric power dividing unit divides. The control device may also have a memory for controlling the division of the electric power to be divided by the electric power dividing unit based on a recipe recipe pre-stored in the memory. A second high frequency power supply having a high frequency output may be provided; the outer line 6 201127222 circle, the inner coil and the intermediate coil may be connected to the first south frequency power supply, and not connected to the first 1 rlj frequency The remaining two coils of the power source may be connected to the second high frequency power source, and may further include dividing the high frequency electric power output from the second high frequency power source into a desired ratio and supplying the remaining two coils. Electric power division. The first high frequency power source is connectable to the outer coil, and the second high frequency power source is connectable to the inner coil and the intermediate coil. The second high frequency power supply may be provided with a high frequency output; the outer coil, the inner coil and the intermediate coil may be connected to the first high frequency power supply; and the first high frequency power source is not connected One of the remaining two coils of the power source can be connected to the second high frequency power source, and the other of the remaining two coils can be connected to the third high frequency power source. According to the invention as described above, the in-plane uniformity of the plasma density and even the plasma treatment characteristics can be improved. [Embodiment] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. In the present specification and the drawings, constituent elements having substantially the same functional configurations are denoted by the same reference numerals and the description thereof will not be repeated. <First Embodiment> (Overall Configuration of Plasma Processing Apparatus) First, the overall configuration of a plasma processing apparatus according to a first embodiment of the present invention will be described with reference to Figs. 1 and 2 . Fig. 1 is an inductively coupled plasma chamber. 201127222 Fig. 2 is a schematic diagram of a high frequency antenna structure. As shown in Fig. 1, +, Vr Ϊ, „. y, for example, the plasma processing device 10 such as an etching device performs a needle. The wafers loaded from the gate valve gv are all counted: the wide processing valley ι〇0 is a cylinder The shape ' is made of, for example, aluminum' and is grounded. The inner wall of the processing container is anodic emulsified. Alternatively, the inner wall of the processing container 1 may be covered by a dielectric such as quartz or Yttria. The top surface of the container 1GG is filled with a dielectric window 105 at the opening of the processing container, thereby maintaining the internal space of the processing container. The dielectric window 1G5 is a perfect circle formed by oxidizing Cui Lu or quartz. The dielectric window 105 is turned up to penetrate the electromagnetic field energy of the drum (10) to introduce the energy into the processing vessel 1 . The dielectric window 105 is buried with a shower plate 110. The plate 110 is provided with a gas introduction pipe 110a. The gas introduction pipe u〇a can eject the gas into the processing container 100 by a plurality of gas holes 形成b forming an opening on the wafer W side. The gas introduction pipe 110a is The center of the top surface of the processing container 1 is extended toward the outside to connect to the gas. The source window 115 is provided with a high frequency (Rf) antenna 12A on the atmospheric side. As shown in Fig. 2, the surface of the dielectric window 105 is imaginarily divided into an outer region, an inner region, and a t-region. And the axis passing through the center of the dielectric window 1〇5 is defined as a mandrel 〇. The frequency antenna 120 has an outer coil 8 201127222 120a disposed outside the outer region, an inner coil 120c disposed at the inner region, and The intermediate coil 120b in the intermediate portion. The outer coil 12a, the intermediate coil 120b, and the inner coil 120c are concentrically arranged with respect to the central axis 。. Further, each of the coils 120a to 120c is about one turn around each region. In the present embodiment, the intermediate region is provided with a plurality of loops. However, the present invention is not limited thereto, and may be divided into two or more regions, and each of them may be divided into two or more regions. The intermediate coils are provided with the intermediate coils one by one. One of the coils 120a to 12C is connected to the power supply rods 125 & 125c. The power supply rods 125a to 125c are connected to the first high frequency power source 140 via the matching unit 135. I-high frequency The high-frequency electric power outputted by the source is applied to the coils 12Ga to 12Ge through the matching unit 135 and the respective power supply rods 125a to 125e, so that the high-frequency current flows to the respective coils to 12〇c 〇士琛园uua~lzuc & There is an electric power division between the two. The electric power is divided into _ 13 cookware village variable impedance Wei (for example, variable electric service. Phase antenna Wei Jian has phase coil 120a 130 ^ ° + inter-antenna circuit is made of variable impedance - ed) circuit The impedance electric intermediate coil leg is formed. The inner antenna circuit is configured by the variable structure path 130a and the variable impedance circuit 130b and the inner coil 1 to apply the impedance impedance circuits 130a, 130b. That is, by adjusting the capacitance of the path 130a as the impedance adjusting portion by adjusting the variable impedance, the inner antenna electric impedance of the mine can be controlled as described later in 201127222, and the outer antenna circuit can be controlled and flowed in the middle and the inner side. The ratio of the current. Similarly, by adjusting the variable impedance circuit 130b = electric valley ' to control the impedance of the intermediate antenna circuit and the inner antenna circuit = the current flowing through the intermediate antenna circuit and the _ antenna circuit, the variable impedance circuits 13Ga, (10) It has a function of dividing the height from the output of the i-th high-frequency power source (10) to the respective coils with the desired off-ride (four). Further, the variable capacitor may be disposed at least between the outer line _ 12 〇 a and the inner coil C. However, if it is disposed between the coils as in the present state, the accuracy of the division control of the electric power can be improved. According to the above structure, the plasma treatment will come from the first! The high-frequency power of the high-frequency power source 140, for example, 13.56 MHz, is supplied to the high-frequency antenna no, so that the +-high-frequency current flows to the respective coils i2a to 12〇c of the high-frequency antenna 120. Thereby, an electromagnetic field is generated around the coil, and electric field energy is introduced into the processing container 1 through the dielectric window 105. The energy after introduction will excite the gas to produce a plasma. The plasma density fraction at this time can be controlled by controlling the impedance of the outer coil 120a, the intermediate coil i2〇b, and the inner coil 12 by the variable impedance circuits 13a and 13b. The point is as detailed later. The other ends of the outer coil 120a, the intermediate coil 12〇b, and the inner coil 12A are grounded via the blocking capacitors 145a to 145c, respectively. The functions of the blocking capacitors 145a to 145c will be described later. 201127222
處理容器100内部設置有載置晶H ⑽載置於载置台150之晶圓界係藉由圖中 靜電夾具來加以吸著保持。載置自15()係經由匹 155而連接至高頻偏壓電源16〇。高頻偏壓電 二 在電漿處理中，將偏壓用高頻電功率（例如頻率曰The processing chamber 100 is provided with a mounting crystal H (10). The wafer boundary placed on the mounting table 150 is sucked and held by an electrostatic chuck in the drawing. The placement from 15 () is connected to the high frequency bias power supply 16 via via 155. High-frequency bias voltage 2 In the plasma processing, the bias voltage is used for high-frequency electric power (for example, frequency 曰
之高頻電功率)施加給載置台15〇。藉由該偏麵 +Z 功率，可將處理容器HH)内所產生的電聚中之 = 地吸引至晶圓W。 力效 處理容器100底部則經由排氣管165而連接有包人 真空泵的排氣裝置17G，以將處理容器⑽内部抽= 遠所期望的真空度(例如1.33Pa左右）。 ’工 電功率分割部130與控制裝置22〇相連接。控制裝 置220具有CPU220a、記憶體220b、以及介面^ (I/F)220c，各部可經由内部匯流排(bus)22〇d來進行訊號 的傳遞。 & 記憶體220b預先記憶有製程配方，可用以控制電 功率分割部130之可變阻抗電路n〇a、130b中各自的 電容。製程配方可根據製程來設定可變阻抗電路13〇a、 130b中各自的電容。CPU220a則會選擇與製程相符的 製程配方’並依該製程配方來控制可變阻抗電路l3〇a、 130b中各自的電容。製程配方可記憶於硬碟等中，亦 可記憶於CDROM等記憶媒體中，抑或經由網路來下 載。 (天線結構） 201127222 例如，南頻天線係由外周側與内周側的2個渦卷狀 線圈所形成叫*，則藉由外周側與内周側的2個線圈所獲 得之圓形電流組態會產生出2個甜甜圈狀的電漿，該2 個甜甜圈狀的電漿之間處，電漿密度會降低。例如，圖 3(a)之曲線Np’即為藉由外周側與内周側的2個渦卷狀 線圈所獲得之電漿密度分佈的一範例。直徑為3〇〇mm 晶圓的外周部及内周部處的電漿密度較高，而其中間處 的電漿密度較低。依此，對晶圓進行電漿處理的面内均 勻性會惡化，而造成良率下降、生產性降低。 相對於此，本實施形態之高頻天線12〇係將外側線 圈120a、中間線圈120b及内側線圈120c等3個線圈相 對於中心軸〇呈同心狀捲繞而成。藉此，如圖3(a)中曲 線Nc所示，藉由外側線圈i2〇a、中間線圈i2〇b及内 側線圈120c等3個線圈所獲得之電漿密度分佈中，晶 圓之外周部及内周部處的電漿密度較高，且由於具有中 間線圈120b故於其中間處的電漿密度亦不會降低。藉 此’可對晶圓以良好的電漿處理之面内均勻性來提高良 率與生產性。 特別是，現狀主要是以直徑300mm之晶圓為對 象，但將來亦可對直徑450mm之晶圓進行電漿處理。 FPD用基板年年不斷大型化，而該等基板亦須進行電漿 處理。因此，為了達成良率、生產性的提高，於大面積 之均勻化電襞越顯重要。本實施形態中，係對應於大型 化之被處理體尺寸，而增加中間線圈的個數n(n^l)。 12 201127222 如此，可將高頻天線120之形狀最佳化，使得外周側與 内周側之間處的電漿密度不會降低。 (電功率分割/阻抗調整） 又，施加於各線圈之高頻電功率係藉由電功率分割 部130來分割成所期望的比例。參考圖4來說明關於高 頻天線120之阻抗調整功能。 圖4係顯不向頻天線12 0的供電部分的等效電路。 如前述，從第1高頻電源140所輸出之高頻會經由匹配 器135而供給至外側線圈120a、中間線圈120b及内側 線圈120c。外側線圈120a直接供給有高頻電功率。中 間線圈120b經由可變阻抗電路(例如可變電容）130a而 供給有高頻電功率。内側線圈120c則經由可變阻抗電 路（例如可變電容）130a及可變阻抗電路（例如可變電 容）13 Ob而供給有高頻電功率。 說明外側線圈120a、中間線圈120b及内侧線圈 120c之阻抗Zo、Zc、Zi的調整方法。外側線圈120a 僅係由線圈所形成，故阻抗Z 〇為固定值。中間線圏12 0 b 之阻抗Zc能藉由改變可變阻抗電路130a的電容來加以 變更。内側線圈120c之阻抗Zi則可藉由各自改變可變 阻抗電路130a及可變阻抗電路130b的電容來加以變 更。 南頻電流li與南頻電流Ic與尚頻電流1〇會根據阻 抗Zi與阻抗Zc與阻抗Zo之間的比例而產生變化。利 用此點，本實施形態中，則根據控制裝置220的指令， 13 201127222 來各別控制可變阻抗電路130a及可變阻抗電路13〇b的 電容。藉此，藉由改變阻抗zi與阻抗Zc來改變各阻抗 Zl、Zc、Zo的比例。藉此，可調整流通於各 頻電流Ii、Ic、1〇的比例。 晶圓W之周緣側，電漿中之電子或離子會撞擊至 =而/肖滅’故電漿密度會有偏低的傾向。考慮此點，於 電:3二〇:施亡最大電功率的電功率’以使得外側 =電:力德割並施加給内侧線圈㈣及中間： 120b。如此’便可藉由高頻天線12〇之3 〜⑽與電功率分割部13G來調整高頻天線⑽圈與· 之_感應#合狀態。其結果，可進行控制以使得電聚 發區域中’外側之電漿密度較全體電裝密度偏高，同 時可防止内側與外側之間的中間部分處 低，：達成全體電褒之均句化。其結果，可保持= 體之處理面内均勻性。 .特別疋，近年來使用者希望能在1個處理室進行多 種製程。然而’至今為止的钱處理裝置中，會因不同 電衆製程之氣體種類、壓力、RF電功率而造成電衆均 句性的變化’難以確保均勻性。另一方面，依本實施形 態之電漿處理裝置’根據製程對3個區域以上之天線實 施電功率分割㈣’便可對應於多種製絲適當地進行 供電，可確保不同製程之電漿均勻性。 (回饋控制） 201127222 控制裝置220亦可對施加至各線圈的高頻電功率 比例進行回饋(feedback)控制。此時，各供電棒125a、 125b、125c連接有測量器250a、25〇b、25〇c，而可對 流通於各線圈120a、120b、120c之高頻電流、電壓、 相位中至少任一者進行測量。 控制裝置220會根據測量器250a〜25〇c所測量出 的咼頻電流、電塵、相位，來控制電功率分割部13〇所 分割的電功率比。更具體說明，控制裝置220會根據p = VIxcos0(V :電壓、I :電流、θ :相位）來計算，由流 通於各線圈120a、120b、120c之電流、電壓、相位來 求出施加於該線圈的高頻電功率之大小，再對可變阻抗 電路130a、130b進行回饋控制，以縮小應施加給各線 圈120a〜120c的高頻電功率與目前已施加的電功率之 間的差值。作為測量器250a〜250c可使用電壓計、探 針、CT(Current Transfer)。 藉由前述回饋控制，如圖3(a)所示，可將電漿密度 之不均句由曲線Np—曲線Nc—曲線Nu般地進行補 正，故可產生更均勻的電漿。 另外’控制裝置220亦可具有記憶體220b，並根 據預先記憶於記憶體220b的製程配方來控制於電功率 分割部130處所進行之電功率比分割。此時，記憶體 220b預先記憶有複數個製程配方，可用以控制於電功 率分割部130處所進行之電功率比分割。製程配方預先 設定有可變阻抗電路130a、130b中各自的電容。 15 201127222 CPU220a則會選擇與所欲執行之製程相符的製程配 方’並依该製程配方來控制可變阻抗電路13〇a、l3〇b 中各自的電容。 由於感應耦合型電漿處理裝置係使用高頻電磁場 來產生电漿，為了對電漿供給均等的能量，裝置的對稱 性非$重要。因此，本實施形態中，如圖1及圖2所示， 可變阻抗電路130a、130b於裝置之中心軸〇上係呈串 聯設置，並維持3個區域所設置之3個線圈之高頻天線 120與可變阻抗電路13〇a、130b之間的對稱性。即，高 頻天線120係相對於中心轴〇而具有對稱性，且電功率 分割部130亦相對於中心軸〇而具有對稱性。 (阻隔電容） 各線圈120a〜120c之終端部介設有阻隔電容i45a 〜145c。參考圖3(b)，相較於未使用阻隔電容145a〜 145c之情況下的各線圈i2〇a、12〇b、120c之供電點Sa、 Sb、Sc的電壓Vpl，在使用了 p且隔電容145a〜145c之 情況下，可將供電點Sa、Sb、Sc的電壓Vp2下降至電 壓Vpl的一半左右。藉此，町避免供電點sa、Sb、Sc 附近的頂板因電子加速而受則激烈撞擊。 <第1貫施形態之變形例^> 第1實施形態之變形例如圖5〜圖7所示。圖5〜 圖7之電漿處理裝置10雖然省略繪出處理容器1〇〇内 部’但其結構與圖1相同。圖5之電聚處理裳置1 〇係 相對於外側線圈120a、中間線圈12此的供電點Sa、Sb， 201127222 :内侧線圈12Ge的供電㈣設置於偏移·的位置 二圖6之電漿處理裝置10係相對於外侧線圈120a之 二=%，而將中間線圈腿、内側線圈120c的供電 點sb、Sc設置於偏移18〇。的位置處。 圖7之電漿處理m係相對於外側線圈i2〇a、 :線圈12Gb的供電點Sa、Sb，而將内侧線圈i2〇c 之-電點Sc設置於偏移18〇。的位置處。除此之外，圖 5及圖6中，可變阻抗電路13如、13%為串聯，相對地， 圖7中，可變阻抗電路咖、13%則為並聯。但是， 相對於中心轴〇皆具有對稱性。 依變形例，亦可藉由將電功率適#地分割後的高頻 電功率供給至具有3個以上區域之高頻天線，來提 高電漿的均勻性。 <第2實施形態> -般來說’感應耦合型電漿處理裴置中，並非是僅 考慮⑴使用來自高頻天線12G之電磁場能量來加速電 子以產生電漿’、亦需要考慮到⑺通過電容而與電漿輕合 之電子’來達成電渡的均勻性。因此，不僅是⑴的天線 之設計’亦需考慮到(2)之電容成分來設計裝置。 第1實施形態之電漿處料置1G已賴了相對於 晶圓w徑向的電漿密度之均勻性。即，第i實施形態 係考慮到⑴’而將高頻天線12G假想地分割成外側區 域、内侧區域、中間區域等3個區域，並於各區域設置 線圈，以提高徑向的電漿密度之均句今生 17 [S] 201127222 降低:電施形態:係考慮到(2)’而使用阻隔電容以 ?、”、、之電壓。藉此，由於供電點之電壓較古，< 避免附近的介電體窗105受到來自電漿‘擊。The high frequency electric power is applied to the mounting table 15A. By the bias +Z power, the ground generated in the processing container HH) can be attracted to the wafer W. At the bottom of the force-effect processing container 100, an exhaust device 17G for enclosing a vacuum pump is connected via an exhaust pipe 165 to evacuate the inside of the processing container (10) to a desired degree of vacuum (e.g., about 1.33 Pa). The electric power dividing unit 130 is connected to the control unit 22A. The control device 220 has a CPU 220a, a memory 220b, and an interface ^(I/F) 220c, and each unit can transmit signals via an internal bus 22〇d. The & memory 220b is pre-stored with a recipe recipe for controlling the respective capacitances of the variable impedance circuits n?a, 130b of the electric power dividing portion 130. The process recipe can set the respective capacitances of the variable impedance circuits 13a, 130b according to the process. The CPU 220a selects the process recipe ′ corresponding to the process and controls the respective capacitances of the variable impedance circuits 13a, 130b according to the process recipe. The process recipe can be memorized on a hard disk, etc., and can also be memorized in a memory medium such as a CDROM or downloaded via a network. (Aerenna structure) 201127222 For example, a south-frequency antenna is formed by two spiral coils on the outer circumference side and the inner circumference side, and a circular current group obtained by two coils on the outer circumference side and the inner circumference side. The state produces two donut-like plasmas, and the plasma density decreases between the two donut-like plasmas. For example, the curve Np' of Fig. 3(a) is an example of the plasma density distribution obtained by the two spiral coils on the outer circumference side and the inner circumference side. The plasma density at the outer and inner peripheral portions of the wafer having a diameter of 3 mm is higher, and the plasma density at the middle is lower. As a result, the in-plane uniformity of the plasma treatment of the wafer is deteriorated, resulting in a decrease in yield and a decrease in productivity. On the other hand, in the high-frequency antenna 12 of the present embodiment, three coils such as the outer coil 120a, the intermediate coil 120b, and the inner coil 120c are concentrically wound with respect to the central axis 。. Thereby, as shown by the curve Nc in FIG. 3(a), the plasma density distribution obtained by the three coils of the outer coil i2〇a, the intermediate coil i2〇b, and the inner coil 120c is the outer peripheral portion of the wafer. The plasma density at the inner peripheral portion is higher, and the plasma density at the middle thereof is not lowered due to the intermediate coil 120b. By this, the in-plane uniformity of the wafer can be improved by good plasma processing to improve yield and productivity. In particular, the current status is mainly for wafers with a diameter of 300 mm, but in the future, wafers with a diameter of 450 mm can be plasma treated. The substrate for FPD has been increasing in size year by year, and these substrates have to be subjected to plasma treatment. Therefore, in order to achieve improvement in yield and productivity, it is more important to homogenize the electric power over a large area. In the present embodiment, the number n (n^l) of the intermediate coils is increased in accordance with the size of the object to be processed which is increased in size. 12 201127222 In this way, the shape of the high frequency antenna 120 can be optimized such that the plasma density between the outer peripheral side and the inner peripheral side is not lowered. (Electrical power division/impedance adjustment) Further, the high-frequency electric power applied to each coil is divided into a desired ratio by the electric power division unit 130. The impedance adjustment function with respect to the high frequency antenna 120 will be explained with reference to FIG. Fig. 4 shows an equivalent circuit of the power supply portion of the non-frequency antenna 120. As described above, the high frequency output from the first high frequency power supply 140 is supplied to the outer coil 120a, the intermediate coil 120b, and the inner coil 120c via the matching unit 135. The outer coil 120a is directly supplied with high frequency electric power. The intermediate coil 120b is supplied with high-frequency electric power via a variable impedance circuit (for example, a variable capacitor) 130a. The inner coil 120c is supplied with high-frequency electric power via a variable impedance circuit (for example, a variable capacitor) 130a and a variable impedance circuit (for example, a variable capacitor) 13 Ob. A method of adjusting the impedances Zo, Zc, and Zi of the outer coil 120a, the intermediate coil 120b, and the inner coil 120c will be described. The outer coil 120a is formed only by the coil, so the impedance Z 〇 is a fixed value. The impedance Zc of the intermediate line 圏 12 0 b can be changed by changing the capacitance of the variable impedance circuit 130a. The impedance Zi of the inner coil 120c can be changed by changing the capacitances of the variable impedance circuit 130a and the variable impedance circuit 130b, respectively. The south frequency current li and the south frequency current Ic and the frequency current 1 〇 vary depending on the ratio between the impedance Zi and the impedance Zc and the impedance Zo. With this, in the present embodiment, the capacitances of the variable impedance circuit 130a and the variable impedance circuit 13b are individually controlled according to the command of the control device 220, 13201127222. Thereby, the ratio of each of the impedances Z1, Zc, and Zo is changed by changing the impedance zi and the impedance Zc. Thereby, the ratio of the currents flowing through the respective frequency currents Ii, Ic, and 1〇 can be adjusted. On the peripheral side of the wafer W, electrons or ions in the plasma may impinge on = and/or off, so the plasma density tends to be low. Consider this point, in electricity: 3 〇: the electrical power of the maximum electrical power is allowed to 'such that the outer side = electricity: force cut and applied to the inner coil (four) and the middle: 120b. Thus, the state of the high frequency antenna (10) and the _ induction # can be adjusted by the high frequency antenna 12 〜 3 to (10) and the electric power dividing unit 13G. As a result, it is possible to control so that the plasma density on the outer side of the electric polymerization area is higher than the density of the entire electric package, and at the same time, the middle portion between the inner side and the outer side can be prevented from being low, and the homogenization of the whole electric power is achieved. . As a result, the in-plane uniformity of the body can be maintained. In particular, users have been hoping to perform multiple processes in one processing room in recent years. However, in the money processing apparatus hitherto, the electric property of the electric power is different due to the gas type, pressure, and RF electric power of different electric power processes. It is difficult to ensure uniformity. On the other hand, the plasma processing apparatus according to the present embodiment performs electric power division (four) on the antennas of three or more regions according to the manufacturing process, and can appropriately supply power corresponding to a plurality of types of yarns, thereby ensuring plasma uniformity of different processes. (Feedback Control) 201127222 The control device 220 can also perform feedback control on the high frequency electric power ratio applied to each coil. At this time, the power supply bars 125a, 125b, and 125c are connected to the measuring devices 250a, 25B, and 25c, and at least one of the high-frequency current, voltage, and phase flowing through the coils 120a, 120b, and 120c. Make measurements. The control device 220 controls the electric power ratio divided by the electric power dividing unit 13A based on the chirp frequency current, the electric dust, and the phase measured by the measuring devices 250a to 25〇c. More specifically, the control device 220 calculates the current, voltage, and phase flowing through the coils 120a, 120b, and 120c based on p = VIxcos0 (V: voltage, I: current, θ: phase). The magnitude of the high frequency electric power of the coil is then subjected to feedback control of the variable impedance circuits 130a, 130b to reduce the difference between the high frequency electric power to be applied to each of the coils 120a to 120c and the currently applied electric power. As the measuring instruments 250a to 250c, a voltmeter, a probe, and CT (Current Transfer) can be used. By the feedback control described above, as shown in Fig. 3(a), the unevenness of the plasma density can be corrected by the curve Np - the curve Nc - the curve Nu, so that a more uniform plasma can be produced. Further, the control device 220 may have a memory 220b and control the electric power ratio division performed at the electric power dividing unit 130 based on the recipe recipe previously stored in the memory 220b. At this time, the memory 220b is preliminarily stored with a plurality of process recipes, and can be used to control the electric power ratio division performed at the electric power dividing section 130. The process recipe is preset with the respective capacitances of the variable impedance circuits 130a, 130b. 15 201127222 CPU220a selects the process recipe corresponding to the process to be executed and controls the respective capacitances of the variable impedance circuits 13〇a, l3〇b according to the process recipe. Since the inductively coupled plasma processing apparatus uses a high frequency electromagnetic field to generate plasma, the symmetry of the apparatus is not important in order to supply equal energy to the plasma. Therefore, in the present embodiment, as shown in FIGS. 1 and 2, the variable impedance circuits 130a and 130b are arranged in series on the central axis of the device, and maintain the high frequency antennas of the three coils provided in the three regions. The symmetry between 120 and the variable impedance circuits 13A, 130b. That is, the high frequency antenna 120 has symmetry with respect to the central axis ,, and the electric power dividing unit 130 also has symmetry with respect to the central axis 。. (Barrier Capacitor) The blocking portions i45a to 145c are interposed in the terminal portions of the respective coils 120a to 120c. Referring to FIG. 3(b), the voltage Vpl of the feed points Sa, Sb, and Sc of the coils i2a, 12B, and 120c in the case where the barrier capacitors 145a to 145c are not used is used and separated. In the case of the capacitors 145a to 145c, the voltage Vp2 of the feed points Sa, Sb, and Sc can be reduced to about half of the voltage Vpl. In this way, the town avoids the strong impact of the top plate near the power supply points sa, Sb, and Sc due to electron acceleration. <Modification of the first embodiment>> The modification of the first embodiment is as shown in Figs. 5 to 7, for example. The plasma processing apparatus 10 of Figs. 5 to 7 has the same structure as that of Fig. 1 although the inside of the processing container 1 is omitted. The electropolymerization process of FIG. 5 is performed on the power supply points Sa and Sb of the outer coil 120a and the intermediate coil 12, and the power supply of the inner coil 12Ge (4) is set at the offset position and the plasma processing of FIG. The device 10 is set to an offset of 18 相对 with respect to the outer coil 120a by two =%, and the intermediate coil legs and the inner coil 120c. The location. The plasma processing m of Fig. 7 is set to the offset 18 相对 with respect to the feeding points Sa and Sb of the outer coil i2 〇 a and the coil 12Gb, and the electric point Sc of the inner coil i2 〇 c. The location. In addition, in Fig. 5 and Fig. 6, the variable impedance circuit 13 is, for example, 13% connected in series. In contrast, in Fig. 7, the variable impedance circuit is 13% in parallel. However, it has symmetry with respect to the central axis. According to the modification, the uniformity of the plasma can be improved by supplying the high-frequency electric power divided by the electric power to the high-frequency antenna having three or more regions. <Second Embodiment> - Generally speaking, in the "inductively coupled plasma processing apparatus", it is not only considered that (1) the electromagnetic field energy from the high frequency antenna 12G is used to accelerate the electrons to generate the plasma", and it is also necessary to take into consideration (7) The electrons that are lightly coupled to the plasma by a capacitor' to achieve uniformity of the electric crossing. Therefore, not only the design of the antenna of (1) but also the capacitance component of (2) is required to design the device. The plasma placement of 1G in the first embodiment relies on the uniformity of the plasma density in the radial direction of the wafer w. In other words, in the first embodiment, the high-frequency antenna 12G is virtually divided into three regions such as an outer region, an inner region, and an intermediate region in consideration of (1)', and coils are provided in each region to increase the plasma density in the radial direction.均句今生 17 [S] 201127222 Decrease: Electric form: Take the consideration of (2)' and use the blocking capacitor to the voltage of ?, ",". Therefore, because the voltage of the power supply point is relatively old, < avoid nearby The dielectric window 105 is subjected to a shock from the plasma.
圓周=密第二 =更可達到相對於晶圓W J电水饴度之均句性。即’第2齒 由5又置具有對稱性的複數個供電點 電漿密度之均勻性。 木杈间0周方向的 圓==捲繞1層或2層以上而成的高頻天線於 0周方向具有㈣稱之㈣分佈 燒1圈（360。)時之線圈的電壓 手=將線圈捲 電壓Vpl p ^ P 77佈。此時，線圈之 、仏電點p處最兩，而後逐漸 於圓周方向的電_度於供電 二口: 方向的電衆密度之均句性①科並無法達到圓周 於是，本實施形態中，於各區域各 【二藉二成圓周方向的編度:⑻: 電聚處理裂置10的概略縱剖面圖。電ΐ 處理裝置Η)雖然省略％出處理容器⑽ = 構與圖u目同。圖8(b)係本實施形態 -置了 的供電部分之概略圖。 电4理裝置10 外側區域<外側線圈係由第1外側線圈120al及第 2外側線圈120a2等2鉻嬙園於園以⑽丄及第 …m々二 所形成。第1外側線圈 120al及第外侧線圈12〇a2之—端係Circumference = dense second = more uniformity with respect to the temperature of the wafer W J. That is, the 'second tooth' has a uniformity of the plasma density of a plurality of power supply points having symmetry. Circle in the 0-week direction between the rafts ==The high-frequency antenna that is wound by one or more layers has the voltage of the coil in the 0-week direction (4) (4) when the distribution is burned once (360). The coil voltage Vpl p ^ P 77 cloth. At this time, the coil has the most two points at the p-point, and then gradually increases the electric power in the circumferential direction from the power supply two: the uniformity of the electric density of the direction is not uniform, and in this embodiment, In each area, the two sides are programmed in the circumferential direction: (8): a schematic longitudinal section of the electropolymerization treatment. The electric ΐ processing device Η) omits the % processing container (10) = the same as the drawing. Fig. 8 (b) is a schematic view of the power supply portion of the embodiment. The outer region of the electric device 10 is formed of (10) and (m) two by the second outer coil 120a1 and the second outer coil 120a2. The first outer coil 120al and the outer outer coil 12〇a2 are end-end
Sal、Sa2歧接至供電棒咖、㈣ 201127222 電源140所輸出的高頻電功率會通過匹配器135、各供 電棒125al與125a2而施加給第1外側線圈120al及第 2外側線圈120a2。第1外側線圈120al及第2外側線 圈120a2係在相對於中心軸〇而沿相同方向繞行一圈 後’經由阻隔電容145al、145a2而形成接地狀態。供 電點Sal、Sa2係相互偏離180。而設置於相對中心軸〇 呈對向的位置點。 回到圖9，係顯示將線圈捲繞1圈（360。)時之第i 外側線圈120al的電壓Vpll分佈及第2外侧線圈12〇a2 的電壓Vpl2分佈。此時，各線圈之電壓Vpll及電壓 Vpl2中，於供電點Sal、Sa2處最高，而後逐漸下降。 但是，供電點Sa卜Sa2處的電壓VpU、Vpl2較以1條 線圈捲繞而成時之供電點p的電壓Vpl更低。此外，供 電點Sal、Sa2係相互偏離18〇。。因此’相較於1條線 圈周圍所產生的電磁場能量，第1外側線圈12〇ai及第 2外侧線圈120a2之2條線圈周圍所產生的電磁場能量 於圓周方向較均勻。 同樣地’中間區域之中間線圈係由第1中間線圈 120bl及第2中間線圈n〇b2等2條線圈所形成。第J 中間線圈120bl及第2中間線圈I20b2之一端係各自於 供電點SM、Sb2處連接至供電棒i25ta、125b2。從第 1高頻電源140所輸出的高頻電功率會通過各供電棒 125M、125b2而施加給第1中間線圈12〇bi及第2中 間線圈120b2。第1中間線圈12〇bl及第2中間線圈 [S】 19 201127222 職係在繞行一圈後 而形成接地狀態。 阻隔电谷145M、i45b2 同樣地，内侧區域之内 咖及第2内侧線圈12〇(：2=圈係由第1内側線圈 内側線圈120cl及第2内條線圈所形成。第1 供電點Scl、Sc2處連接& =2〇c2之一端係各自於 1高頻電源、14〇戶斤輸出的j棒125cl、125c2°從第 125cl、l25e2而施力σ給第功率會通過各供電棒 120〇2〇^ 1 * 2 係在繞行1後，經由阻隔電it2内侧線圈1編 接地狀態。 電令H5cl、i45c2而形成 達到1條線圈捲繞1層之情況下無法 向的電装密度之均句性，藉由將2條線圈朝 :晉：ί繞’且各線圈之供電點設置於相互偏離⑽。 雷圖9所7^ ’可提高2條線圈於圓周方向上的 2::!，並可提高導入至處理容器1〇〇内部的電場 =里：:性。其結果’可降低於供電點附近之介電體 :=5所X攻擊力道，並可提高各區域於圓周方向的電 激密度之均勻性。 ^除1^之外，第2實施形態如第1實施形態所述亦可 2由至少分割成3個區域及電功率來達成徑向的電漿 密度之均勻。由以上第2實施形態之電漿處理裝置1〇 中叮於氣黎激發區域全體處產生均勻的電聚，亦可對 20 201127222 應於電漿處理裝置的大型化。 另外’外側線圈、内側線圈及中間線圈係各自由複 數個線圈卿成，形成外爾圈之複數個線圈的各供 點只要設置於相射心軸〇呈浦之位聽即可 如’本實施形態之高頻天線12G，係各線圈會從兩侧導 入’繞行―圈後’終止於接電點的結構，而供電點之2 點具有。18 G。之對稱性。如前述，亦可具有3點供電點並 呈120。對稱’亦可具有4點供電點而呈9〇。對稱。 各線圈之供電點可相對中心軸Ο而呈i80。、120。、 90。、72。、60。中任一間隔般來設置。對稱設置之供電 點的個數越多’則於u周方向上的電聚密度便越均句， 可降低供電點附近之介電體窗105所受的攻擊力道。 又’當供電點越多，不但可藉由電磁場分佈來讓電裝分 佈均勻，亦可藉由電容分佈來讓電漿分佈均勻。 <第3實施形態> 第1實施形態中，電功率分割部13〇内的可變阻广 電路(例如可變電容）〗30a、丨30b係相對於中心軸0而2 對稱設置。相對於此，第3實施形態中，可變阻抗電路 130a、130b係相對中心軸〇而呈非對稱設置。前述情 況如圖10所示’電功率分割部13G與存在有高頻天線 120之空間係藉由遮蔽組件獨來加以遮蔽。遮蔽組件 300係由銘等導電性組件所形成。高頻天線12〇則 於天線室310内。 藉此，可避免電功率分割部130與高頻天線12〇之 201127222 間的非對稱之輕合（C0Upling) ’以維持雜散電容（Stray Capacity)成分的對稱性。藉此’可使得電聚之產生不會 受到天線周圍之磁場狀態等的影響。又，電功率分割部 130與高頻天線12〇之間的電場不會相互干涉，可使得 天線内之電壓與振幅等的均勻性不會受到影響。 <第4實施形態> 第4實施形態中，藉由改變高頻天線12〇與電漿之 間的距離來控制與電漿之間的耦合狀態。圖U中，電 功率分割部130之可變阻抗電路130a為1個，以進行 外侧線圈120a2與中間線圈I20b2之間的電功率分割。 本實施形態中，供電點為Sa卜Sa2、Sbl、Sb2等4個。 中間線圈120bl與内側線圈120cl係經由導線 125cl相互連接。中間線圈i20b2與内側線圈12〇c2係 經由導線125c2相互連接。外侧線圈I20al、120a2以 及内側線圈120cl、120c2的端部設置有阻隔電容 145al 、 145a2 、 145cl 、 145c2 。 内側線圈120cl、120c2為可動式結構，可改變與 介電體窗105之間的距離。内侧線圈I20cl、120c2與 介電體窗105之間則形成空間400。 依此，如讓高頻天線120下降，由於縮短了與電漿 之間的距離，則可讓電子之加速變好。另一方面，如讓 高頻天線120上昇’由於增加了與電漿之間的距離，則 會讓電子之加速變差。 藉由介電體窗1〇5與線圈之間距離的遠近，可獲得 22 201127222 與改變線圈與線圈之間電功率比般的相同效果。例如， 使得一侧之線圈與電襞之間的距離較另一側之線圈與 電装之間的距離更大’即使流通有相同的電流，仍可使 得-側之線圈與電衆之間_合度較另―側之線圈與 電漿之間的結合度更小。 以上範例中，雖然内侧線圈12〇cl、12〇c2為可動 式結構，但亦可使得外側線圈120&1與12〇&2、中間線 圈120bl與120b2及内側線圈12〇()1與12〇c2中至少任 一者為可動式結構，來改變與介電體t 1〇5之間的距 離。外側線圈、内側線圈、中間線圈亦可全部皆為可動 式結構。 另外，高頻天線120與介電體窗1〇5之間的空間 2亦可纽有介電體，抑或以熱傳導液(Gaiden)來填 η亥空間400。增加高頻天、線12〇與介電體窗 105之間 苜距離、於該等之时人介電體、以熱傳導液來填滿高 頻天線12 〇與介電财10 5之間的空間棚等，皆係加 =容成分，而為在不使用電容之情況下改變電容性分 佈的方法:所夾設之介電體以介電率高者為佳。 入φ又藉由改文问頻天線120與介電體冑⑽之間的 =體之厚度，可改變與電聚之間_合狀態。由於能 以間單之機構來改變„分饰，故成本低廉。 <第5實施形態> 源5貫施形態中’如圖12所示，除了第1高頻電 ’、之外’亦5又置有能輸出所期望高頻的第2高頻電 23 201127222 源141。本實施形態中，第1高頻電源140係經由匹配 器135而連接至外側線圈120a。第2高頻電源141係經 由匹配器136而連接至内側線圈120c及中間線圈 120b。可變阻抗電路130a會將從第2高頻電源141所 輸出的高頻電功率以所期望比例進行分割，並供給至内 側線圈120c及中間線圈120b。 依本實施形態，可提高製程之控制性而於3個區域 各自施加最佳化之電功率，且能以高精度地分割電功 率0 另外，本實施形態中，雖係於第1高頻電源140連 接有外側線圈120a，於第2高頻電源141則連接有剩餘 的2個線圈（内側線圈120c及中間線圈120b)，但並非 限定於此，亦可將外側線圈120a、内側線圈120c及中 間線圈120b中任一者連接至第1高頻電源140，再將 未連接至第1高頻電源140的剩餘2個線圈連接至第2 局頻電源141。 <第6實施形態> 第6實施形態中，如圖13所示，除了第1高頻電 源140之外，亦設置有能輸出所期望高頻的第2及第3 高頻電源14卜142。本實施形態中，第1高頻電源140 係經由匹配器135而連接至外側線圈120a。第2高頻電 源141係經由匹配器136而連接至中間線圈120b。第3 高頻電源142係經由匹配器137而連接至内側線圈 120c。 24 201127222 如此，本實施形態中，將外側線圈l2〇a内側線圈 12〇c及中間線圈120b中任一者連接炱第1高頻電源 刚，再將未連接至第1高頻㈣140的剩餘2個線圈 中的一者連接至第2高頻電源141，旅將該剩餘2個線 圈中的另一者連接至第3高頻電源142。 依本實施形態，可提高製程之控制性而於” 各自施加最佳化之電功率，且能以高精度地刀°】电功 率。 如以上說明，依各實施形態，可對3個區域以上的 天線’藉由可變電容來改變電功率之施加比率以把加向 頻電功率。藉此，將供給至各捲繞線圈的電功率進行分 割。藉此，可達成晶圓W徑向的電漿之均句性。 又，藉由於各區域之天線(線圈）各自對稱地設置複 數個供電點，可達成晶圓w圓周方向的電漿之均勻性。 雖然不同線圈各自使用複數個電源的成本會變局’值如 將電功率分割部130應用於各線圈來分割電功率，則成 本低廉。 以上’已參考添附圖式來詳細說明本發明之較佳實 施形態，但無須贅言本發明並不限定於前述範例。本發 明所屬技術領域中具有通常知識者，明顯地可於專利申 請範圍所記載的技術思想範疇内，想到各種變更例或修 正例，該等當然亦屬於本發明的技術範圍。 例如，本發明之高頻天線的各區域之線圈捲繞數， 亦可捲繞2層以上而呈平面狀，抑或將各線圈縱向堆 25 201127222 疊。 雖然圖中未顯示，但在 。士从办丨fa 长將乳體0出至處理容器内 叶，外側&域、内側區域、中 _ 。内 複數區域中，亦可對氣_或_、、=進=圓之 又明電聚處理裝置不限定為餘繼 為進盯灰化、夹而虏饰 〜 ..^ 理、CVD(Chemical VaporSal and Sa2 are connected to the power supply bar. (4) The high-frequency electric power output from the power source 140 is applied to the first outer coil 120a1 and the second outer coil 120a2 via the matching unit 135 and the respective power supply rods 125a1 and 125a2. The first outer coil 120a1 and the second outer coil 120a2 are grounded in the same direction with respect to the central axis ’, and are grounded via the barrier capacitors 145a1 and 145a2. The power supply points Sal and Sa2 are offset from each other by 180. It is placed at a position opposite to the central axis 〇. Referring back to Fig. 9, the voltage Vp11 distribution of the i-th outer coil 120al and the voltage Vpl2 of the second outer coil 12a2 are distributed when the coil is wound once (360). At this time, among the voltages Vp11 and Vpl2 of the respective coils, they are highest at the feeding points Sal and Sa2, and then gradually fall. However, the voltages VpU and Vpl2 at the feeding point Sab Sa2 are lower than the voltage Vpl of the feeding point p when one coil is wound. Further, the supply points Sal and Sa2 are offset from each other by 18 〇. . Therefore, the electromagnetic field energy generated around the two coils of the first outer coil 12 〇ai and the second outer coil 120a2 is relatively uniform in the circumferential direction with respect to the electromagnetic field energy generated around one coil. Similarly, the intermediate coil of the intermediate portion is formed by two coils such as the first intermediate coil 120b1 and the second intermediate coil n〇b2. One of the Jth intermediate coil 120b1 and the second intermediate coil I20b2 is connected to the power supply rods i25ta, 125b2 at the feeding points SM, Sb2, respectively. The high-frequency electric power output from the first high-frequency power source 140 is applied to the first intermediate coil 12〇bi and the second intermediate coil 120b2 via the respective power supply rods 125M and 125b2. The first intermediate coil 12 〇 bl and the second intermediate coil [S] 19 201127222 The grade is grounded after one round. In the same manner, the inside of the inner region and the second inner coil 12〇 are formed by the first inner coil inner coil 120cl and the second inner coil. The first power supply point Scl, At the Sc2 connection, one of the terminals of the & =2〇c2 is respectively connected to the power supply rod 120 by the high-frequency power supply, the j-bar 125cl, 125c2 of the 14-inch output, and the voltage σ from the 125cl, l25e2. 2〇^ 1 * 2 After the bypass 1 is made, the grounding state of the inner coil 1 is blocked by the electric is2. The H5cl and i45c2 are used to form the uniformity of the electrical density that cannot be reached when one coil is wound. Sex, by placing two coils toward: Jin: ί around ' and the power supply points of the coils are set to deviate from each other (10). Leitu 9 7^ ' can increase the 2 coils in the circumferential direction of 2::!, and The electric field introduced into the inside of the processing container 1 can be increased. The result can be lowered to the dielectric body near the feeding point: = 5 X attacking force, and the electric excitation of each region in the circumferential direction can be improved. Uniformity of density. In addition to 1^, the second embodiment may be divided into at least three regions as described in the first embodiment. And electric power to achieve uniform plasma density in the radial direction. In the plasma processing apparatus 1 of the second embodiment, the uniform electric current is generated in the entire gas excitation region, and may be applied to the plasma in 2011. In addition, the outer coil, the inner coil, and the intermediate coil are each formed of a plurality of coils, and each of the plurality of coils forming the outer loop is disposed at the position of the phase mandrel. For example, the high-frequency antenna 12G of the present embodiment has a structure in which each coil is introduced with a 'circle-loop' from both sides and terminates at a power-on point, and two points of the power supply point have a symmetry of 18 G. As mentioned above, it can also have a 3-point power supply point and be 120. The symmetry ' can also have a 4-point power supply point and be 9 〇. Symmetry. The power supply point of each coil can be i80 with respect to the central axis, 120, 90 , 72., 60. Set at any interval. The more the number of power points that are symmetrically set, the more uniform the density of electricity in the u-cycle, and the dielectric near the feed point can be reduced. The attack power of the window 105. And 'when the power supply point is more In addition, the distribution of the electric power can be made uniform by the distribution of the electromagnetic field, and the distribution of the plasma can be made uniform by the capacitance distribution. <Third Embodiment> In the first embodiment, the electric power dividing unit 13 is variable. The blocking circuit (for example, variable capacitor) 30a and 30b are symmetrically disposed with respect to the central axis 0 and 2. In the third embodiment, the variable impedance circuits 130a and 130b are non-centered with respect to the central axis. The symmetry is provided. As described above, the electric power dividing unit 13G and the space in which the high-frequency antenna 120 is present are shielded by the shielding unit alone. The shield assembly 300 is formed by a conductive component such as Ming. The high frequency antenna 12 is in the antenna chamber 310. Thereby, the asymmetric coupling (C0Upling) between the electric power dividing unit 130 and the high-frequency antenna 12 2011 201127222 can be avoided to maintain the symmetry of the stray capacitance component. Thereby, the generation of the electropolymer can be prevented from being affected by the state of the magnetic field around the antenna or the like. Further, the electric fields between the electric power dividing unit 130 and the radio-frequency antenna 12A do not interfere with each other, and the uniformity of voltage and amplitude in the antenna can be prevented from being affected. <Fourth Embodiment> In the fourth embodiment, the coupling state with the plasma is controlled by changing the distance between the radio-frequency antenna 12A and the plasma. In Fig. U, one variable impedance circuit 130a of the electric power dividing unit 130 is divided to perform electric power split between the outer coil 120a2 and the intermediate coil I20b2. In the present embodiment, the feeding point is four such as Sab Sa2, Sbl, and Sb2. The intermediate coil 120b1 and the inner coil 120cl are connected to each other via a wire 125cl. The intermediate coil i20b2 and the inner coil 12〇c2 are connected to each other via a wire 125c2. The outer coils I20al and 120a2 and the inner coils 120cl and 120c2 are provided with blocking capacitors 145a1, 145a2, 145cl, and 145c2 at their ends. The inner coils 120cl, 120c2 are of a movable structure and can change the distance from the dielectric window 105. A space 400 is formed between the inner coils I20c1, 120c2 and the dielectric window 105. Accordingly, if the high frequency antenna 120 is lowered, the acceleration of the electrons can be improved by shortening the distance from the plasma. On the other hand, if the high-frequency antenna 120 is raised, the acceleration of the electrons is deteriorated by increasing the distance from the plasma. By the distance between the dielectric window 1〇5 and the coil, 22 201127222 can be obtained with the same effect as changing the electric power ratio between the coil and the coil. For example, the distance between the coil on one side and the electric raft is made larger than the distance between the coil on the other side and the electrical installation. Even if the same current flows, the coil on the side can be made to be combined with the electrician. The degree of bonding between the coil and the plasma is smaller than that of the other side. In the above example, although the inner coils 12〇cl and 12〇c2 are movable structures, the outer coils 120&1 and 12〇&2, the intermediate coils 120b1 and 120b2, and the inner coils 12〇()1 and 12 may be made. At least one of 〇c2 is a movable structure to change the distance from the dielectric body t1〇5. The outer coil, the inner coil, and the intermediate coil may all be movable structures. In addition, the space 2 between the high-frequency antenna 120 and the dielectric window 1〇5 may also have a dielectric body, or may be filled with a heat transfer liquid (Gaiden). Increasing the distance between the high-frequency day, the line 12〇 and the dielectric window 105, and the space between the high-frequency antenna 12 and the dielectric 10 5 at the time of the human dielectric and the heat transfer fluid The shed, etc. are all added to the capacitance component, and the method of changing the capacitive distribution without using a capacitor: the dielectric body to be sandwiched is preferably a dielectric constant. Into φ, by changing the thickness of the body between the frequency antenna 120 and the dielectric body 10 (10), the state of the _ _ _ can be changed. Since the singularity can be changed by the mechanism of the singularity, the cost is low. <Fifth Embodiment> In the form of the source 5, as shown in Fig. 12, in addition to the first high frequency electric power, Further, the second high frequency power source 23 is connected to the outer side coil 120a via the matching unit 135. The second high frequency power source 141 is connected to the outer side coil 120a via the matching unit 135. The inner coil 120c and the intermediate coil 120b are connected to each other via the matching unit 136. The variable impedance circuit 130a divides the high frequency electric power output from the second high frequency power supply 141 at a desired ratio and supplies it to the inner coil 120c and In the present embodiment, the controllability of the process can be improved, and the optimized electric power can be applied to each of the three regions, and the electric power can be divided with high precision. In addition, in the present embodiment, the first coil is used. The outer power coil 140 is connected to the outer coil 120a, and the second high frequency power source 141 is connected to the remaining two coils (the inner coil 120c and the intermediate coil 120b). However, the present invention is not limited thereto, and the outer coil 120a and the inner coil 120c may be connected. And intermediate coil 1 Any one of 20b is connected to the first high-frequency power source 140, and the remaining two coils not connected to the first high-frequency power source 140 are connected to the second local power source 141. <Sixth embodiment> The sixth embodiment In the embodiment, as shown in FIG. 13, in addition to the first high-frequency power source 140, second and third high-frequency power sources 14 142 capable of outputting a desired high frequency are provided. In the present embodiment, the first high frequency is provided. The power source 140 is connected to the outer coil 120a via the matching unit 135. The second high frequency power source 141 is connected to the intermediate coil 120b via the matching unit 136. The third high frequency power source 142 is connected to the inner coil 120c via the matching unit 137. 24 201127222 As described above, in the present embodiment, one of the inner coil 12〇c and the intermediate coil 120b of the outer coil 12a is connected to the first high frequency power supply, and the remaining 2 is not connected to the first high frequency (four) 140. One of the coils is connected to the second high-frequency power source 141, and the other of the remaining two coils is connected to the third high-frequency power source 142. According to this embodiment, the controllability of the process can be improved. Each of the optimized electric power is applied, and the electric power can be accurately measured. As described above, according to the respective embodiments, the application ratio of the electric power can be changed by the variable capacitance for the antennas of three or more regions to increase the applied frequency power. Thereby, the electric power supplied to each of the winding coils is divided. Thereby, the uniformity of the plasma in the radial direction of the wafer W can be achieved. Further, since the antennas (coils) of the respective regions are symmetrically provided with a plurality of feeding points, the uniformity of the plasma in the circumferential direction of the wafer w can be achieved. Although the cost of using a plurality of power supplies for different coils varies, the electric power dividing unit 130 is applied to each coil to divide the electric power, which is inexpensive. The preferred embodiments of the present invention have been described in detail above with reference to the accompanying drawings, but the invention is not limited to the foregoing examples. It is obvious that those skilled in the art can devise various modifications or modifications within the scope of the technical scope of the patent application, and these are of course also within the technical scope of the present invention. For example, the number of coil windings in each region of the high-frequency antenna of the present invention may be two or more windings in a planar shape, or the vertical windings of the respective coils may be stacked. Although not shown in the figure, it is. From the 丨 丨 长 long, the milk body 0 is discharged to the inside of the processing container, the outer & field, the inner area, and the middle _. In the inner and plural areas, it is also possible to use the gas _ or _, , = =====================================================================================
Deposition)專電漿處理用的裝置。 p 又，藉由本㈣㈣處理裝置㈣行錢處理的被 處理體不亦可為FPD(Flat 响㈣ 用基板或太陽能電池用基板等。作為FPD可舉例如液 晶顯示器（LCD)、發光二極體(LED)顯示器、電致發光 (Electro Luminescence ; El)顯示器、螢光管顯示器 (Vacuum Fluorescent Display ; VFD)、電漿顯示面板（PDP) 等。 【圖式簡單說明】 圖1係本發明第1實施形態之電漿處理裝置的縱剖 面圖。 圖2係第1實施形態之高頻天線結構的說明圖。 圖3中，圖3(a)係顯示晶圓徑向的電漿密度，圖3(b) 係阻隔電容作用的說明圖。 圖4係第1實施形態之等效電路圖。 圖5係第1實施形態之電漿處理裝置的變形例之圖 26 201127222 圖6係第1實施形態之電漿處理裝置的其他變形例 之圖式。 圖7係第1實施形態之電漿處理裝置的其他變形例 之圖式。 圖8中，圖8(a)係本發明第2實施形態之電漿處理 裝置的縱剖面圖，圖8(b)係第2實施形態之高頻天線結 構的說明圖。 圖9係晶圓圓周方向之電壓狀態的說明圖。 圖10係本發明第3實施形態之電漿處理裝置的縱 剖面圖。 圖11中，圖11(a)係本發明第4實施形態之電漿處 理裝置的縱剖面圖，圖11(b)係第4實施形態之高頻天 線結構的說明圖。 圖12係本發明第5實施形態之電漿處理裝置的縱 剖面圖。 圖13係本發明第6實施形態之電漿處理裝置的縱 剖面圖。 【主要元件符號說明】 10 電漿處理裝置 100 處理容器 105 介電體窗 110 淋氣板 110a 氣體導入管 110b 氣體孔 115 氣體供給源 120 南頻天線 120a 外侧線圈 120al 第1外側線圈 27 201127222 120a2 第2外側線圈 120bl 弟1中間線圈 120c 内側線圈 120c2 第2内側線圈 125b、 125bl > 125b2 供電棒 130 電功率分割部 135 匹配器 141 第2高頻電源 145a、 145al、145a2阻隔電容 145c、 145cl、145c2阻隔電容 155 匹配器 165 排氣管 220 控制裝置 220b 記憶體 220d 匯流排 300 遮蔽組件 GV 閘閥 W 晶圓 120b 中間線圈 120b2 第2中間線圈 120cl 第1内側線圈 125a、125al、125a2供電棒 125c、125cl、125c2供電棒 130a、130b 可變阻抗電路 140 第1高頻電源 142 第3高頻電源 145b、145bl、145b2 阻隔電容 150 載置台 160 第1高頻偏壓電源 170 排氣裝置Deposition) A device for processing plasma. In addition, the object to be processed which is processed by the (4) (4) processing device (4) may not be an FPD (Flat (4) substrate or a solar cell substrate, etc. As the FPD, for example, a liquid crystal display (LCD) or a light-emitting diode (for example) LED) display, electroluminescence (Electro Luminescence; El) display, fluorescent tube display (VFD), plasma display panel (PDP), etc. [Schematic description] FIG. 1 is the first embodiment of the present invention Fig. 2 is an explanatory view showing the structure of the radio-frequency antenna according to the first embodiment. Fig. 3(a) shows the plasma density in the radial direction of the wafer, Fig. 3 (Fig. 3 Fig. 4 is an equivalent circuit diagram of the first embodiment. Fig. 5 is a modification of the plasma processing apparatus according to the first embodiment. Fig. 26 201127222 Fig. 6 is a diagram of the first embodiment. Fig. 7 is a view showing another modification of the plasma processing apparatus according to the first embodiment. Fig. 8 (a) is a plasma according to a second embodiment of the present invention. A longitudinal sectional view of the processing apparatus, and Fig. 8(b) is a second embodiment Fig. 9 is an explanatory view showing a voltage state in the circumferential direction of the wafer. Fig. 10 is a longitudinal sectional view showing a plasma processing apparatus according to a third embodiment of the present invention. Fig. 11 (a) Fig. 11(b) is an explanatory view showing a configuration of a radio-frequency antenna according to a fourth embodiment of the present invention. Fig. 12 is a view showing a plasma processing apparatus according to a fifth embodiment of the present invention. Fig. 13 is a longitudinal sectional view of a plasma processing apparatus according to a sixth embodiment of the present invention. [Description of main components] 10 Plasma processing apparatus 100 Processing container 105 Dielectric window 110 Air shower plate 110a Gas introduction Tube 110b gas hole 115 gas supply source 120 south frequency antenna 120a outer coil 120al first outer coil 27 201127222 120a2 second outer coil 120bl first middle coil 120c inner coil 120c2 second inner coil 125b, 125bl > 125b2 power supply rod 130 electric power Dividing portion 135 Matching device 141 Second high-frequency power source 145a, 145al, 145a2 Barrier capacitor 145c, 145cl, 145c2 Barrier capacitor 155 Matcher 165 Exhaust pipe 220 Control device 220b memory 220d bus bar 300 shielding component GV gate valve W wafer 120b intermediate coil 120b2 second intermediate coil 120cl first inner coil 125a, 125al, 125a2 power supply rod 125c, 125cl, 125c2 power supply rod 130a, 130b variable impedance circuit 140 First high frequency power supply 142 Third high frequency power supply 145b, 145b1, 145b2 Barrier capacitor 150 mounting table 160 First high frequency bias power supply 170 Exhaust device
220a CPU 220c 介面部 250a、250b、250c 測量器 310 天線室220a CPU 220c interface 250a, 250b, 250c measurer 310 antenna room
Sa、Sb、Sc 供電點 28Sa, Sb, Sc power supply points 28