TWI785760B

TWI785760B - variable capacitor

Info

Publication number: TWI785760B
Application number: TW110131651A
Authority: TW
Inventors: 小倉和也; 堤裕彦; 酒井雅弘
Original assignee: 日商明電舍股份有限公司
Priority date: 2020-10-30
Filing date: 2021-08-26
Publication date: 2022-12-01
Also published as: JP2022073915A; JP7031779B1; TW202219998A; WO2022091511A1

Abstract

具備位於相互隔開所定距離的位置的第1電極(1)及第2電極(2)，與分別電性連接前述第1電極(1)及前述第2電極(2)的兩者間的複數個串聯電路(SC1～SC6)。又，於前述各串聯電路(SC1～SC6)中，介電體(3)與具備1個以上對向於其介電體(3)而設置之半導體晶片的半導體開關(SW1～SW6)分別串聯連接。然後，前述各半導體開關(SW1～SW6)的半導體晶片(4)係藉由分派連接於該各半導體開關(SW1～SW6)的驅動電路，以前述各串聯電路(SC1～SC6)的電流分別成為開路狀態或閉路狀態之方式切換控制。It has a first electrode (1) and a second electrode (2) located at a predetermined distance from each other, and a plurality of electrodes electrically connected between the first electrode (1) and the second electrode (2) respectively. A series circuit (SC1~SC6). Also, in each of the above-mentioned series circuits (SC1-SC6), the dielectric body (3) is connected in series with the semiconductor switches (SW1-SW6) having more than one semiconductor chip opposite to the dielectric body (3). connect. Then, the semiconductor chips (4) of the above-mentioned semiconductor switches (SW1-SW6) are connected to the driving circuits of the respective semiconductor switches (SW1-SW6) by distribution, so that the currents of the above-mentioned series circuits (SC1-SC6) become Open-circuit state or closed-circuit state switching control.

Description

可變電容器variable capacitor

本發明係關於可適用作為例如高電壓、高頻用的電容器的可變電容器。The present invention relates to a variable capacitor applicable as, for example, a capacitor for high voltage and high frequency.

作為可適用於高電壓、高頻用的電容器的可變電容器之一例，公知如專利文獻1所示之可變型的真空電容器(以下僅適當稱為先前的電容器)。As an example of a variable capacitor applicable to a capacitor for high-voltage and high-frequency use, a variable-type vacuum capacitor (hereinafter referred to as a conventional capacitor as appropriate) shown in Patent Document 1 is known.

該專利文獻1之先前的電容器，係具備於真空容器(在專利文獻1中為符號10)內，將同心圓狀且直徑不同的複數圓筒狀電極板，同心狀地安裝於固定電極安裝導體所形成的固定電極(在專利文獻1中為符號15)、以能以非接觸狀態***抽出於該固定電極的各圓筒狀電極板間之方式，將直徑不同的複數圓筒狀電極板，同心狀地安裝於可動電極安裝導體所形成的可動電極(在專利文獻1中為符號16)、及使該可動電極從前述真空容器的外部往圓筒狀電極板的軸線方向移動的可動導線(在專利文獻1中為符號10)。The previous capacitor of this Patent Document 1 is provided in a vacuum container (reference numeral 10 in Patent Document 1), and a plurality of concentric cylindrical electrode plates with different diameters are concentrically attached to the fixed electrode mounting conductor. The formed fixed electrode (referred to as 15 in Patent Document 1) is a plurality of cylindrical electrode plates with different diameters that can be inserted and drawn out between the cylindrical electrode plates of the fixed electrode in a non-contact state. A movable electrode (referred to as 16 in Patent Document 1) formed by concentrically attaching to the movable electrode mounting conductor, and a movable lead ( In Patent Document 1, it is coded 10).

依據此種先前的電容器，藉由透過可動導線，適當移動操作(在專利文獻1中為手動或以馬達旋轉移動符號23的操作部)可動電極，讓固定電極與可動電極的兩者的對向面積變化。亦即，可將發生於該兩者間的靜電容(電容量)變更成各式各樣之值。 [先前技術文獻] [專利文獻] According to such a conventional capacitor, by passing through the movable wire, the movable electrode is appropriately moved (in Patent Document 1, the operation part of the symbol 23 is rotated manually or by a motor), so that the fixed electrode and the movable electrode are opposite to each other. area changes. That is, the capacitance (capacitance) generated between the two can be changed to various values. [Prior Art Literature] [Patent Document]

[專利文獻1]日本特開平8-008142號公報[Patent Document 1] Japanese Patent Application Laid-Open No. 8-008142

變更先前的電容器的靜電容時，機械性(物理性)移動可動電極等，故於該變更的操作中，會受到慣性所致之影響。前述靜電容的變更時，真空部分(真空容器)的體積會變化，故於該變更的操作中，也會受到大氣壓的影響。When changing the electrostatic capacity of the conventional capacitor, the movable electrodes etc. are moved mechanically (physically), so the changing operation is affected by inertia. When the electrostatic capacity is changed, the volume of the vacuum part (vacuum container) will change, so the change operation is also affected by the atmospheric pressure.

亦即，先前的電容器係機械性電更靜電容的構造，於該變更的操作中，需要所定轉矩及時間。據此，可推估例如於前述變更的操作中，謀求高速化及高回應化等比較困難。That is to say, the conventional capacitor has a mechanically more electrostatic capacitance structure, and a predetermined torque and time are required for the modified operation. From this, it can be estimated that, for example, it is difficult to achieve high speed and high response in the above-mentioned modified operation.

本發明係有鑒於前述課題所發明者，提供可對靜電容的變更之操作性有所貢獻的技術。The present invention is made in view of the aforementioned problems, and provides a technology that can contribute to the operability of changing the electrostatic capacity.

本發明的可變電容器，係有對解決前述課題有所貢獻者，其一樣態係具備：第1電極及第2電極，係位於相互隔開所定距離的位置；及複數個串聯電路，係分別電性連接前述第1電極及前述第2電極的兩者間，且於該兩者間並聯連接；前述各串聯電路，係介電體，與具備1個以上對向於前述介電體而設置之半導體晶片的半導體開關串聯連接；前述各半導體開關的半導體晶片，係藉由連接於該各半導體開關的驅動電路，以前述串聯電路的電流分別成為開路狀態或閉路狀態之方式切換控制。 The variable capacitor of the present invention contributes to solving the above-mentioned problems, and its one state is provided with: the first electrode and the second electrode are located at positions separated from each other by a predetermined distance; and a plurality of series circuits are respectively Electrically connecting the two of the first electrode and the second electrode, and connecting them in parallel; each of the above-mentioned series circuits is a dielectric body, and has one or more facing the dielectric body. The semiconductor switches of the semiconductor chips are connected in series; the semiconductor chips of the aforementioned semiconductor switches are switched and controlled in such a way that the current of the aforementioned series circuits becomes an open circuit state or a closed circuit state respectively by a driving circuit connected to the respective semiconductor switches.

又，於前述各串聯電路中至少2個，前述的各半導體開關為開路狀態時的靜電容，係為分別不同之值亦可。 In addition, in at least two of the above-mentioned series circuits, the electrostatic capacitances of the above-mentioned semiconductor switches in an open state may be different values respectively.

又，於前述各串聯電路中至少2個，半導體開關係分別具備不同個數的半導體晶片亦可。 In addition, at least two semiconductor switches may have different numbers of semiconductor chips in each of the aforementioned series circuits.

又，於前述各串聯電路中至少2個，半導體開關係半導體晶片之對向於介電體的面所致之面積分別不同亦可。 In addition, in at least two of the aforementioned series circuits, the semiconductor switches may have different areas due to the surface of the semiconductor chip facing the dielectric.

又，於前述各串聯電路中至少2個，分別具有不同之介電率的介電體亦可。 In addition, at least two of the aforementioned series circuits may have dielectrics having different dielectric constants.

又，於前述各串聯電路中至少2個，介電體係該介電體之對向於半導體晶片的方向的距離分別不同亦可。 In addition, in at least two of the above-mentioned series circuits, the distances of the dielectric bodies in the dielectric system to the direction of the semiconductor wafer may be different from each other.

又，具備2個前述第1電極，該各第1電極位於相互隔開所定距離的位置；前述第2電極中介於前述各第1電極之間亦可。 Moreover, two said 1st electrodes are provided, and said 1st electrodes are located in the position mutually spaced apart by predetermined distance, and said 2nd electrodes may be interposed between said 1st electrodes.

又，前述第1電極，係分離成複數個電極部的構造；前述各半導體開關，係連接於前述各電極部之任一亦可。 Also, the first electrode may be divided into a plurality of electrode parts, and each of the semiconductor switches may be connected to any one of the electrode parts.

依據以上所示的本發明，可對靜電容的變更之操作性有所貢獻。 According to the present invention described above, it is possible to contribute to the operability of changing the capacitance.

本發明的實施形態所致之可變電容器，係與如先前的電容器般機械性移動可動電極等來變更靜電容的構造完全不同者。The variable capacitor according to the embodiment of the present invention is completely different from the conventional capacitor in which the static capacitance is changed by mechanically moving the movable electrodes.

亦即，本實施形態的可變電容器係具備位於相互隔開所定距離的位置的第1電極及第2電極，與分別電性連接前述第1電極及前述第2電極的兩者間的複數個串聯電路。又，於前述各串聯電路中，介電體與具備1個以上對向於其介電體而設置之半導體晶片的半導體開關串聯連接。然後，於前述各半導體開關的半導體晶片中，作為藉由連接於該各半導體開關的驅動電路，以前述串聯電路的電流分別成為開路狀態或閉路狀態之方式切換控制(以下僅適當稱為開閉控制)的構造。That is, the variable capacitor of the present embodiment includes a first electrode and a second electrode positioned at a predetermined distance from each other, and a plurality of capacitors electrically connected between the first electrode and the second electrode, respectively. series circuit. Also, in each of the aforementioned series circuits, the dielectric body is connected in series to semiconductor switches including one or more semiconductor chips provided to face the dielectric body. Then, in the semiconductor chip of each of the aforementioned semiconductor switches, as a drive circuit connected to each of the semiconductor switches, the current of the aforementioned series circuit is switched and controlled in an open state or a closed state (hereinafter only appropriately referred to as switching control). ) structure.

依據此種構造，藉由連接於該各半導體開關的驅動電路，開閉控制該各半導體開關的半導體晶片，可將靜電容(電容量)變更為各式各樣之值。亦即，本實施形態的可變電容器係為可電性(數位性)變更靜電容的構造，不會像先前的電容器需要所定轉矩及時間。所以，與先前的電容器相較，有可對靜電容的變更之操作性(例如靜電容的變更操作的高速化及高回應化等)有所貢獻的可能性。According to such a structure, the capacitance (capacitance) can be changed to various values by switching and controlling the semiconductor chip of each semiconductor switch by the driving circuit connected to each semiconductor switch. That is to say, the variable capacitor of this embodiment has a structure in which the static capacitance can be changed electrically (digitally), and does not require a predetermined torque and time like previous capacitors. Therefore, compared with conventional capacitors, it is possible to contribute to the operability of changing the electrostatic capacity (for example, speeding up and improving the response of the changing operation of the electrostatic capacity, etc.).

本實施形態的可變電容器，係如上所述般，只要可電性變更靜電容的構造即可，可適當適用各種領域(例如可變電容器領域、半導體開關領域、介電體領域、驅動電路領域等)的技術通常知識，可因應需要而適當參照先前技術文獻等，進行設計變形，作為其一例，可舉出以下的實施例1～6。再者，在以下的實施例1～6中，例如關於重複的內容，藉由適用相同符號，適當省略詳細的說明。又，於圖中的介電體中，為了方便說明，附加濃淡所致之色彩。The variable capacitor of this embodiment is suitable for various fields (for example, the field of variable capacitors, the field of semiconductor switches, the field of dielectrics, the field of drive circuits, etc.) etc.), design modifications can be made by appropriately referring to prior art documents, etc. as necessary, and the following Examples 1 to 6 can be cited as one example. In addition, in the following Examples 1 to 6, for example, the same symbols are used for overlapping contents, and detailed descriptions are appropriately omitted. In addition, in the dielectric body in the figure, for the sake of convenience of explanation, the color according to the shade is added.

《實施例1》圖1～圖5係說明實施例1所致之可變電容器10A者。該可變電容器10A係具備分別為平板狀且位於相互隔開所定距離的位置的第1電極1及第2電極2、位於第1電極1及第2電極2兩者之間，層積設置於該第2電極2的一端面2a之平板狀的介電體3、於第1電極1及介電體3的兩者間，相互隔開距離設置於該介電體3的表面3a的複數個半導體開關SW(在圖1(A)中為6個半導體開關SW1～SW6)。 "Example 1" 1 to 5 illustrate the variable capacitor 10A according to the first embodiment. This variable capacitor 10A is provided with a first electrode 1 and a second electrode 2 which are each in a flat plate shape and are located at a predetermined distance from each other, and are arranged in layers between the first electrode 1 and the second electrode 2 . A plurality of plate-shaped dielectric bodies 3 on one end surface 2a of the second electrode 2 are provided on the surface 3a of the dielectric body 3 at a distance from each other between the first electrode 1 and the dielectric body 3. Semiconductor switches SW (six semiconductor switches SW1 to SW6 in FIG. 1(A) ).

＜半導體開關SW的構造例＞然後，於各半導體開關SW中，成為具備例如具有反向阻斷IGBT及二極體等的半導體元件所成的半導體晶片4，藉由該半導體晶片4，以流通於半導體開關SW的電流成為開路狀態或閉路狀態之方式切換的構造。 <Structure example of semiconductor switch SW> Then, each semiconductor switch SW is provided with a semiconductor chip 4 including, for example, a semiconductor element including a reverse blocking IGBT and a diode, and the current flowing through the semiconductor switch SW is opened by this semiconductor chip 4. The structure of switching between states or closed-circuit states.

該半導體晶片4係可適用各種樣態，並未特別限定。例如在可變電容器10A作為交流用途時，於半導體晶片4可於雙方向流通電流(流通於第1電極1側方向的電流、及流通於第2電極2側方向的電流)。此時，可舉出如圖2所示的半導體晶片4般，並聯連接例如由反向阻斷IGBT所成的元件4a、4b，前述雙方向的電流切換成開路狀態或閉路狀態的構造。Various aspects are applicable to this semiconductor wafer 4, and it is not specifically limited. For example, when the variable capacitor 10A is used for AC, current can flow in both directions (the current flowing in the direction of the first electrode 1 side and the current flowing in the direction of the second electrode 2 side) in the semiconductor chip 4 . In this case, like the semiconductor wafer 4 shown in FIG. 2 , elements 4 a and 4 b made of, for example, reverse blocking IGBTs are connected in parallel, and the bidirectional current is switched to an open state or a closed state.

元件4a、4b的並聯連接構造係可適用各種樣態，作為其一例，可舉出如圖3般構成半導體晶片4。於該圖3的半導體晶片4中，在元件4a、4b與介電體3之間，中介存在內藏(省略圖示)第1連接線及第2連接線的連接用基板41。然後，元件a的射極與元件b的集極藉由第1連接線連接，元件a的集極與元件b的射極藉由第2連接線連接。進而，於第2連接線中，以成為與第1電極1同電位之方式，藉由在第1電極1與連接用基板41之間延伸的連接配線(引線等)W連接。Various aspects can be applied to the parallel connection structure of the elements 4a, 4b, and as an example, the structure of the semiconductor wafer 4 as shown in FIG. 3 can be mentioned. In the semiconductor wafer 4 of FIG. 3 , a connection substrate 41 incorporating (not shown in the figure) first and second connection lines is interposed between the elements 4 a and 4 b and the dielectric body 3 . Then, the emitter of element a and the collector of element b are connected by the first connection line, and the collector of element a and the emitter of element b are connected by the second connection line. Furthermore, the second connection line is connected by a connection wiring (lead or the like) W extending between the first electrode 1 and the connection substrate 41 so as to have the same potential as the first electrode 1 .

半導體晶片4係以在與介電體3之間可形成後述的電容器c之方式，對於該介電體3對向設置。例如，可舉出於如圖3的半導體晶片4中，連接用基板41的底面40具有作為端子等的功能，在與介電體3之間可形成後述的電容器c時，使其底面40接觸設置於介電體3的表面3a。此時，底面40成為對向於介電體3之面(以下僅適當稱為對向面)。The semiconductor wafer 4 is provided facing the dielectric body 3 so that a capacitor c described later can be formed between the semiconductor wafer 4 and the dielectric body 3 . For example, in the semiconductor wafer 4 as shown in Figure 3, the bottom surface 40 of the substrate 41 for connection has functions such as terminals, and when a capacitor c described later can be formed between the dielectric body 3, the bottom surface 40 is in contact with the dielectric body 3. It is provided on the surface 3 a of the dielectric body 3 . At this time, the bottom surface 40 becomes a surface facing the dielectric body 3 (hereinafter, it is only appropriately referred to as a facing surface).

藉由如此設置半導體晶片4，於各半導體開關SW中，係對於介電體3串聯連接，如圖4(B)所示的等效電路般，在與第2電極2之間形成電容器c(在圖5中係各半導體開關SW1～SW4中形成電容器c1～c4)，分別構成串聯電路SC(在圖1中係於半導體開關SW1～SW6中構成串聯電路SC1～SC6)。亦即，成為於第1電極1及第2電極2的兩者間，並聯連接複數個串聯電路SC。By disposing the semiconductor chip 4 in this way, each semiconductor switch SW is connected in series with the dielectric body 3, and forms a capacitor c ( In FIG. 5, capacitors c1 to c4 are formed in the respective semiconductor switches SW1 to SW4) to constitute series circuits SC (in FIG. 1, semiconductor switches SW1 to SW6 constitute series circuits SC1 to SC6). That is, a plurality of series circuits SC are connected in parallel between the first electrode 1 and the second electrode 2 .

於各串聯電路SC的半導體開關SW，分別連接對應該各串聯電路SC分派的驅動電路D(在圖1(B)中為驅動電路D1～D3分別連接半導體開關SW1～SW3)。藉此，以對於該各半導體開關SW的半導體晶片4，可分別發送用以進行開閉控制的控制訊號之方式構成。The semiconductor switches SW of each series circuit SC are respectively connected to the drive circuits D assigned to the respective series circuits SC (in FIG. 1B , the drive circuits D1 to D3 are respectively connected to the semiconductor switches SW1 to SW3). Thereby, it is comprised so that the control signal for performing opening and closing control can be sent to each semiconductor chip 4 of each semiconductor switch SW.

依據此種構造，藉由分別適當驅動各串聯電路SC的驅動電路D，可對該各串聯電路SC的電流(圖2的交流用途時為雙方向的電流)分別進行開閉控制。According to such a structure, by appropriately driving the driving circuit D of each series circuit SC, the current of each series circuit SC (current in both directions in the case of an AC application in FIG. 2 ) can be individually controlled to be switched on and off.

＜介電體3的構造例＞於第1電極1及第2電極2的兩者間(在後述的實施例5中，進而在第2電極2及第3電極5的兩者間)的介電體3中，只要可絕緣該兩者間，形成圖4、圖5所示的電容器c的話，可適用各種樣態，作為其一例，可舉出使用陶瓷等的介電體材料等所成的介電體3。 <Structure example of dielectric body 3> In the dielectric body 3 between the first electrode 1 and the second electrode 2 (in Example 5 to be described later, between the second electrode 2 and the third electrode 5), as long as it can insulate the Between the two, when forming the capacitor c shown in FIG. 4 and FIG. 5 , various aspects can be applied, and as an example, a dielectric body 3 formed using a dielectric material such as ceramics or the like can be mentioned.

又，例如圖1所示的可變電容器10A之狀況中，成為於各串聯電路SC中共有1個介電體3(在後述的實施例3、4中為共有共通介電體30)的構造，但是，設為於該各串聯電路SC設置個別的介電體3的構造亦可。Also, for example, in the case of the variable capacitor 10A shown in FIG. 1 , one dielectric body 3 is shared in each series circuit SC (the common dielectric body 30 is shared in Embodiments 3 and 4 described later). However, a structure in which an individual dielectric body 3 is provided in each of the series circuits SC may also be used.

作為具體例，首先藉由將圖1所示之平板狀的介電體3，加工(切斷加工等)成配合各串聯電路SC的半導體開關SW之形狀，形成該各串聯電路SC的各介電體片(例如圖4(A)所示之形狀的介電體3)。然後，可舉出將前述各介電體片分散配置於第2電極2的一端面2a，於該各介電體片設置半導體開關SW的構造。As a specific example, first, by processing (cutting, etc.) the planar dielectric body 3 shown in FIG. Dielectric sheet (such as the dielectric body 3 in the shape shown in FIG. 4(A)). Next, a structure in which the above-mentioned dielectric sheets are dispersedly arranged on the one end surface 2 a of the second electrode 2 and the semiconductor switches SW are provided on the respective dielectric sheets can be mentioned.

此外，例如於各串聯電路SC中，在半導體開關SW與第2電極2的兩者間形成真空狀態的空隙部(省略圖示)，可將該空隙部代用作為介電體3，或與介電體3一起並用。In addition, for example, in each series circuit SC, a space (not shown) in a vacuum state is formed between the semiconductor switch SW and the second electrode 2. Electron 3 is used together.

＜可變電容器10A的靜電容＞於可變電容器10A的靜電容中，可適用後述計算式(1)計算。再者，計算式(1)中的C係可變電容器10A的靜電容(單位F)，ε係介電體3的介電率(F/m)，S係開路狀態的半導體開關SW之半導體晶片4的對向面所致之面積(電性面積：以下僅適當稱為電性對向面積)的總計面積(單位m ²)，d係介電體3之與半導體晶片4對向的方向(以下僅適當稱為對向方向)的距離(單位m)。 <Static Capacitance of Variable Capacitor 10A> The static capacitance of the variable capacitor 10A can be calculated by applying calculation formula (1) described later. Furthermore, the static capacitance (unit F) of the C variable capacitor 10A in the calculation formula (1), the dielectric constant (F/m) of the ε dielectric body 3, and the semiconductor switch SW of the semiconductor switch SW of the S department open circuit state. The total area (unit m ² ) of the area due to the facing surface of the wafer 4 (electrical area: hereinafter only appropriately referred to as the electrical facing area), d is the direction in which the dielectric body 3 faces the semiconductor wafer 4 (hereinafter referred to as the opposite direction as appropriate) distance (in m).

C=ε×S/d ……(1) 例如，假設各半導體開關SW之半導體晶片4的電性對向面積分別為Ssw(單位m)的話，3個半導體開關SW(例如半導體開關SW1～SW3)為開路狀態時，計算式(1)的總計面積S為3Ssw。 C=ε×S/d ……(1) For example, assuming that the electrical opposing areas of the semiconductor chips 4 of each semiconductor switch SW are respectively Ssw (unit m), when three semiconductor switches SW (such as semiconductor switches SW1-SW3) are in an open state, the formula (1) The total area S is 3Ssw.

所以，於可變電容器10A中，選擇性地對各串聯電路SC的半導體開關SW進行開閉控制的話，即可適當變更計算式(1)的總計面積S。亦即，可將可變電容器10A的靜電容C變更操作成各式各樣之值。Therefore, in the variable capacitor 10A, if the semiconductor switch SW of each series circuit SC is selectively opened and closed, the total area S of the calculation formula (1) can be appropriately changed. That is, the capacitance C of the variable capacitor 10A can be changed and manipulated to various values.

例如，於各串聯電路SC的半導體開關SW中，電性對向面積為相同值(例如分別Ssw為相同值)時，可均等地分配各半導體開關SW的開閉控制所致之靜電容C的變更幅度(可變值)。For example, when the electrically opposed areas of the semiconductor switches SW of each series circuit SC have the same value (for example, each Ssw has the same value), the change in capacitance C caused by the switching control of each semiconductor switch SW can be evenly distributed. Amplitude (variable value).

又，依據此種構造，各半導體開關SW全部(在圖1中為半導體開關SW1～SW6全部)為開路狀態時，對於介電體3的電荷係透過該各半導體開關SW全部之半導體晶片4的對向面，均等地分配。藉由如此分配電荷，於可變電容器10A的使用時，變得容易抑制可能發生於介電體3的熱集中所致之溫度上升。Also, according to this structure, when all of the semiconductor switches SW (all of the semiconductor switches SW1 to SW6 in FIG. 1 ) are in an open state, the charge to the dielectric body 3 passes through the semiconductor chip 4 of all of the semiconductor switches SW. Opposite faces, equally distributed. By distributing the charges in this way, it becomes easy to suppress a temperature rise due to heat concentration that may occur in the dielectric body 3 when the variable capacitor 10A is used.

＜其他＞於各串聯電路SC中，對於第1電極1及第2電極2(在後述的實施例5中，進而對於第2電極2及第3電極5)的電性連接，係可適用各種樣態，但是，需要以減低漂浮電容之方式連接。作為具體例，如圖1等所示，可舉出將串聯電路SC的半導體開關SW側與第1電極1的兩者，充分隔開配置(例如以設置間隙之方式配置)，藉由連接配線W連接該兩者。＜Other＞ In each series circuit SC, various aspects can be applied to the electrical connection of the first electrode 1 and the second electrode 2 (in Embodiment 5 described later, further, the second electrode 2 and the third electrode 5), However, it needs to be connected in a way to reduce floating capacitance. As a specific example, as shown in FIG. 1 and the like, both the semiconductor switch SW side of the series circuit SC and the first electrode 1 are sufficiently spaced apart (for example, arranged with a gap), and connected by wiring W connects the two.

再者，可舉出於半導體開關SW等中，也可能存在漂浮電容，但是，該漂浮電容是比較小者的話，可適當無視。Furthermore, there may be a floating capacitance in the semiconductor switch SW, etc., but if the floating capacitance is relatively small, it can be appropriately ignored.

以上，依據本本實施例1的可變電容器10A的構造，可將該可變電容器10A的靜電容電性變更為各式各樣之值，故不會像先前的電容器需要所定轉矩及時間。藉此，與先前的電容器相較，容易對靜電容的變更操作的高速化及高回應化等有所貢獻。As described above, according to the structure of the variable capacitor 10A of the first embodiment, the electrostatic capacity of the variable capacitor 10A can be changed to various values, so that a predetermined torque and time are not required like previous capacitors. Thereby, compared with conventional capacitors, it is easy to contribute to the speed-up and high-response of the changing operation of the electrostatic capacity.

《實施例2》於實施例1的可變電容器10A中，各串聯電路SC之半導體開關SW所具備的半導體晶片4的種類及個數同等(電性對向面積同等)時，可成為以下所示內容。 "Example 2" In the variable capacitor 10A of the first embodiment, when the types and numbers of the semiconductor chips 4 included in the semiconductor switches SW of the series circuits SC are the same (the electrical opposing areas are the same), the following contents can be obtained.

亦即，於可變電容器10A中，各串聯電路SC個別的靜電容的變更幅度為一定(各半導體開關SW所致之靜電容的變更幅度為一定)。That is, in the variable capacitor 10A, the range of change in the individual capacitance of each series circuit SC is constant (the range of change in capacitance due to each semiconductor switch SW is constant).

因此，可變電容器10A之可變更的靜電容的種類，係因應串聯電路SC的個數決定。例如，假設將圖5所示之4個串聯電路SC1～SC4的各半導體開關SW1～SW4之靜電容的變更幅度設為「1」的話，藉由各個驅動電路D對該各半導體開關SW1～SW4進行開閉控制時，可變更的靜電容的種類係為「0、1、2、3、4」的5種類。圖5之狀況中，以開路控制半導體開關SW3、SW4之方式描寫，靜電容為「2」。Therefore, the type of variable capacitance of the variable capacitor 10A is determined according to the number of series circuits SC. For example, assuming that the range of change in capacitance of each of the semiconductor switches SW1 to SW4 in the four series circuits SC1 to SC4 shown in FIG. There are 5 types of electrostatic capacity that can be changed during on/off control: "0, 1, 2, 3, 4". In the situation of FIG. 5 , the semiconductor switches SW3 and SW4 are controlled in an open circuit, and the capacitance is "2".

藉此，於可變電容器10A中，例如以相對於最大電容大約3%的精度設定靜電容時，需要100/3≒32個的串聯電路SC(半導體開關SW)。又，對1個半導體開關SW分派1個驅動電路D的話，需要32個驅動電路D。Therefore, in the variable capacitor 10A, when setting the capacitance with an accuracy of about 3% of the maximum capacitance, for example, 100/3≒32 series circuits SC (semiconductor switches SW) are required. Also, if one drive circuit D is assigned to one semiconductor switch SW, 32 drive circuits D are required.

因此，在本實施例2中，於各串聯電路SC的半導體開關SW中，適用具備分別不同個數的半導體晶片4者，將該各串聯電路SC所致之靜電容的變更幅度設為不同者。然後，可藉由於分派至各串聯電路SC的驅動電路D中，選擇性進行開閉控制，增加可變更之靜電容的種類。Therefore, in the second embodiment, semiconductor switches SW having different numbers of semiconductor chips 4 are applied to the semiconductor switches SW of the respective series circuits SC, and the range of change of the electrostatic capacity due to the respective series circuits SC is set to be different. . Then, by selectively performing on-off control in the driving circuits D allocated to each series circuit SC, the types of variable electrostatic capacitances can be increased.

圖6～圖8係用以說明本實施例2所致之可變電容器10B。於該可變電容器10B中，各串聯電路SC的半導體開關SW係分別具有不同個數的半導體晶片4。6 to 8 are used to illustrate the variable capacitor 10B according to the second embodiment. In this variable capacitor 10B, the semiconductor switches SW of each series circuit SC have different numbers of semiconductor chips 4 .

各半導體開關SW所具備之半導體晶片4的個數可適當設定，作為其一例，可舉出如圖6、圖7所示般構成。The number of semiconductor chips 4 included in each semiconductor switch SW can be appropriately set, and as an example, a configuration as shown in FIGS. 6 and 7 can be cited.

圖6的可變電容器10B之狀況中，於半導體開關SW1、SW2、SW3中，分別具有1個、2個、4個的半導體晶片4。亦即，於圖6所致之可變電容器10B中，係成為相對於半導體開關SW為N個，具有2 ^N-1個半導體晶片4的構造(N為2以上的自然數，以下相同)。此時，假設各半導體晶片4的種類及電性對向面積同等的話，該各半導體開關SW之電性對向面積的大小的比例，係為1：2：4：……：(2 ^N-1-1)：(2 ^N-1)。 In the case of the variable capacitor 10B in FIG. 6 , there are one, two, and four semiconductor chips 4 in the semiconductor switches SW1 , SW2 , and SW3 , respectively. That is, in the variable capacitor 10B shown in FIG. 6, there are N semiconductor switches SW, and a structure having ^2N -1 semiconductor chips 4 (N is a natural number greater than or equal to 2, the same applies hereinafter). At this time, assuming that the types and electrically opposed areas of the semiconductor chips 4 are equal, the ratio of the size of the electrically opposed areas of the semiconductor switches SW is 1:2:4:...:(2 ^{N- 1-1} ): (2 ^N-1 ).

圖7的可變電容器10B之狀況中，於半導體開關SW1、SW2、SW3中，分別具有1個、2個、3個的半導體晶片4。此時，假設各半導體晶片4的種類及電性對向面積同等的話，該各半導體開關SW1～SW3之電性對向面積的大小的比例，係為1：2：3。In the case of the variable capacitor 10B in FIG. 7, the semiconductor switches SW1, SW2, and SW3 have one, two, and three semiconductor chips 4, respectively. At this time, assuming that the types and electrically opposed areas of the respective semiconductor chips 4 are the same, the ratio of the sizes of the electrically opposed areas of the respective semiconductor switches SW1 to SW3 is 1:2:3.

如上所述，於具備複數個半導體晶片4的半導體開關SW中，各半導體晶片4的元件4a、4b的並聯連接構造係可適用各種樣態，作為其一例，可舉出如圖8般構成。As described above, in the semiconductor switch SW including a plurality of semiconductor chips 4, various configurations can be applied to the parallel connection structure of the elements 4a, 4b of each semiconductor chip 4, and a configuration as shown in FIG. 8 can be cited as an example.

於圖8的半導體開關SW之狀況中，在各半導體晶片4的元件4a、4b與介電體3之間，與圖3同樣地中介存在內藏(省略圖示)第1連接線及第2連接線的連接用基板41。然後，於各半導體晶片4中，元件a的射極與元件b的集極藉由第1連接線連接，元件a的集極與元件b的射極藉由第2連接線連接。進而，於第2連接線中，以成為與第1電極1同電位之方式，藉由在第1電極1與連接用基板41之間延伸的連接配線W(引線等)連接。In the case of the semiconductor switch SW in FIG. 8, between the elements 4a, 4b of each semiconductor chip 4 and the dielectric body 3, there are built-in (not shown) first connecting wires and second connecting wires interposed therebetween similarly to FIG. A connection substrate 41 for connecting wires. Then, in each semiconductor chip 4 , the emitter of the element a and the collector of the element b are connected by the first connecting line, and the collector of the element a and the emitter of the element b are connected by the second connecting line. Furthermore, the second connection line is connected by the connection wiring W (lead or the like) extending between the first electrode 1 and the connection substrate 41 so as to have the same potential as the first electrode 1 .

在此，於圖6的可變電容器10B中，分派至各串聯電路SC1～SC3的驅動電路D1～D3，係如表1所示般可選擇性進行開閉控制。再者，將可變電容器10B的各半導體晶片4個別之靜電容的變更幅度設為「1」。

依據該表1，可藉由驅動電路D1～D3的開閉控制來變更之靜電容的種類，係可知有「0、1、2、3、4、5、6、7」的8種類。亦即，圖6的可變電容器10B係可說相對於串聯電路SC(半導體開關SW)為N個，可變更成2 ^N種類的靜電容者。 Here, in the variable capacitor 10B of FIG. 6 , the drive circuits D1 to D3 assigned to the respective series circuits SC1 to SC3 are selectively on-off as shown in Table 1. In addition, the change range of the capacitance of each of the four semiconductor chips of the variable capacitor 10B is set to "1".

According to Table 1, the types of static capacitances that can be changed by the switching control of the drive circuits D1-D3 are known to be 8 types of "0, 1, 2, 3, 4, 5, 6, 7". That is, the variable capacitor 10B in FIG. 6 can be said to be N in number with respect to the series circuit SC (semiconductor switch SW), and can be changed to 2 ^N types of electrostatic capacity.

例如，設想以相對於最大電容大約3%的精度設定靜電容時，依據圖6的可變電容器10B，可藉由對5個半導體開關SW適當選擇性進行開閉控制(以5位元控制)，變更成32種類的靜電容。亦即，可知相較於實施例1的可變電容器10A，可減少驅動電路D的個數(從32個減少成5個)。For example, when it is assumed that the static capacitance is set with an accuracy of about 3% relative to the maximum capacitance, according to the variable capacitor 10B of FIG. Changed to 32 types of static capacitance. That is, it can be seen that the number of drive circuits D can be reduced (from 32 to 5) compared to the variable capacitor 10A of the first embodiment.

以上，依據如本實施例2的可變電容器10B的構造，除了可發揮與實施例1相同的作用效果之外，還可有以下所述效果。亦即，相較於實施例1，可利用比較少的驅動電路D變更成多種類的靜電容，有可對可變電容器的小型化及高解析率化有所貢獻的可能性。As described above, according to the structure of the variable capacitor 10B of the second embodiment, in addition to the same effects as those of the first embodiment, the following effects can also be obtained. That is, compared with the first embodiment, it is possible to change to various types of electrostatic capacitance with a relatively small number of driving circuits D, and it is possible to contribute to miniaturization and high resolution of variable capacitors.

再者，可變電容器10B並不需要於所有各串聯電路SC中，以讓半導體開關SW之半導體晶片4的個數分別不同之方式設定，適當設定亦可。例如，只要於各串聯電路SC中至少2個半導體開關SW中，分別具備不同個數的半導體晶片4的話，藉由利用驅動電路D適當選擇性進行開閉控制，可發揮與本實施例2相同的作用效果。Furthermore, the variable capacitor 10B does not need to be set so that the numbers of the semiconductor chips 4 of the semiconductor switches SW are different in all the series circuits SC, and may be set appropriately. For example, as long as at least two semiconductor switches SW in each series circuit SC have different numbers of semiconductor chips 4, by using the drive circuit D to selectively perform switching control, the same effect as that of the second embodiment can be exerted. Effect.

《實施例3》在本實施例3中，於各串聯電路SC的介電體3中，以成為分別不同的介電率之方式構成，將該各串聯電路SC所致之靜電容的變更幅度設為不同者。然後，可藉由於分派至各串聯電路SC的驅動電路D中，選擇性進行開閉控制，增加可變更之靜電容的種類。 "Example 3" In the third embodiment, the dielectric bodies 3 of the series circuits SC are configured to have different dielectric constants, and the ranges of change in capacitance due to the series circuits SC are set to be different. Then, by selectively performing on-off control in the driving circuits D allocated to each series circuit SC, the types of variable electrostatic capacitances can be increased.

圖9係用以說明本實施例3所致之可變電容器10C。該可變電容器10C的各串聯電路SC(在圖9中描寫為3個串聯電路SC1、SC2、SC3)的介電體3中，係層積該各串聯電路SC所共有之共通介電體30，與分別不同之介電率的介電體31(在圖9中為分別不同之介電率的介電體31a、31b、31c)所構成。藉此，於各串聯電路SC中，係成為分別具備不同之介電率的介電體3的構造。FIG. 9 is used to illustrate the variable capacitor 10C according to the third embodiment. In the dielectric body 3 of each series circuit SC (shown as three series circuits SC1, SC2, and SC3 in FIG. 9 ) of the variable capacitor 10C, a common dielectric body 30 common to each series circuit SC is laminated. , and the dielectric bodies 31 of different permittivity (in FIG. 9, the dielectric bodies 31a, 31b, and 31c of different permittivity). Thereby, in each series circuit SC, it becomes the structure which has the dielectric body 3 which respectively has a different permittivity.

於該圖9的可變電容器10C之狀況中，例如將串聯電路SC1、SC2、SC3個別之靜電容的變更幅度設為「α」、「β」、「γ」的話，可藉由驅動電路D1～D3的開閉控制來變更之靜電容的種類，係為「0、α、β、γ、α+β、α+γ、β+γ、α+β+γ」，與圖6的可變電容器10B同樣地為8種類。In the case of the variable capacitor 10C in FIG. 9 , for example, if the variation ranges of the individual capacitances of the series circuits SC1, SC2, and SC3 are set to "α", "β", and "γ", the drive circuit D1 can The type of static capacitance changed by the on-off control of D3 is "0, α, β, γ, α+β, α+γ, β+γ, α+β+γ", which is the same as the variable capacitor in Figure 6 10B is 8 types similarly.

以上，依據如本實施例3的可變電容器10C的構造，除了可發揮與實施例2相同的作用效果之外，還可有以下所述效果。亦即，相較於實施例2，可抑制半導體開關SW的半導體晶片4的個數，故有可對可變電容器的進一步小型化及低成本化有所貢獻的可能性。As described above, according to the structure of the variable capacitor 10C of the third embodiment, in addition to the same effects as those of the second embodiment, the following effects can also be obtained. That is, compared with the second embodiment, the number of semiconductor chips 4 of the semiconductor switch SW can be suppressed, so it is possible to contribute to further miniaturization and cost reduction of the variable capacitor.

再者，可變電容器10C並不需要於所有各串聯電路SC中，以讓介電體3的介電率分別不同之方式設定，適當設定亦可。例如，只要於各串聯電路SC中至少2個串聯電路SC的介電體3中，以成為分別不同的介電率之方式設定的話，藉由利用驅動電路D適當選擇性進行開閉控制，可發揮與本實施例3相同的作用效果。Furthermore, the variable capacitor 10C does not need to be set so that the dielectric constants of the dielectric bodies 3 are different in all the series circuits SC, and may be set appropriately. For example, as long as the dielectrics 3 of at least two series circuits SC in each series circuit SC are set so as to have different permittivity, the drive circuit D can be used to selectively perform on-off control, and the The same function and effect as in the third embodiment.

《實施例4》在本實施例4中，於各串聯電路SC的介電體3中，與實施例3同樣地，以成為分別不同的介電率之方式構成，將各串聯電路SC所致之靜電容的變更幅度設為不同者。然後，可藉由於分派至各串聯電路SC的驅動電路D中，選擇性進行開閉控制，增加可變更之靜電容的種類。 "Example 4" In Example 4, the dielectric body 3 of each series circuit SC is configured to have different permittivity in the same manner as in Example 3, and the change in the capacitance of each series circuit SC is changed. Amplitude is set to be different. Then, by selectively performing on-off control in the driving circuits D allocated to each series circuit SC, the types of variable electrostatic capacitances can be increased.

圖10係用以說明本實施例4所致之可變電容器10D。該可變電容器10D的各串聯電路SC(在圖10中描寫為3個串聯電路SC1、SC2、SC3)的介電體3中，係層積該各串聯電路SC所共有之共通介電體30，與第2電極2的一端面2a之面方向的大小不同的介電體32(在圖9中為分別一端面2a的面方向的大小不同的介電體32a、32b)而階梯狀地構成。FIG. 10 is used to illustrate the variable capacitor 10D according to the fourth embodiment. In the dielectric body 3 of each series circuit SC (shown as three series circuits SC1, SC2, and SC3 in FIG. 10 ) of the variable capacitor 10D, a common dielectric body 30 common to each series circuit SC is laminated. Dielectric bodies 32 having different sizes in the plane direction of one end face 2a of the second electrode 2 (dielectric bodies 32a and 32b having different sizes in the plane direction of the one end face 2a in FIG. .

於各串聯電路SC的半導體開關SW中，設置於介電體3的各層階的表面3a～3c之任一。藉此，於各串聯電路SC中，係成為分別介電體3的對向方向的距離(第2電極2與半導體開關SW(半導體晶片4)之間的距離)不同的構造。In the semiconductor switch SW of each series circuit SC, any one of the surfaces 3 a to 3 c of each step of the dielectric body 3 is provided. Thereby, in each series circuit SC, the distance (the distance between the 2nd electrode 2 and the semiconductor switch SW (semiconductor chip 4)) of the opposing direction of the dielectric body 3 differs in each structure.

於該圖10的可變電容器10D之狀況中，例如將串聯電路SC1、SC2、SC3個別之靜電容的變更幅度設為「α」、「β」、「γ」的話，依照計算式(1)，成為α≠β≠γ。進而，可藉由驅動電路D1～D3的開閉控制來變更之靜電容的種類，係為「0、α、β、γ、α+β、α+γ、β+γ、α+β+γ」，與圖6的可變電容器10B同樣地為8種類。In the case of the variable capacitor 10D in FIG. 10 , for example, if the variation ranges of the individual capacitances of the series circuits SC1, SC2, and SC3 are set to "α", "β", and "γ", according to the calculation formula (1) , becomes α≠β≠γ. Furthermore, the types of electrostatic capacitances that can be changed by switching control of the drive circuits D1-D3 are "0, α, β, γ, α+β, α+γ, β+γ, α+β+γ" , the same as the variable capacitor 10B in FIG. 6 has eight types.

以上，依據如本實施例4的可變電容器10D的構造，除了可發揮與實施例3相同的作用效果之外，還可有以下所述效果。亦即，相較於實施例3，例如可減少或統一適用於介電體3之介電體材料的種類，有可對進一步低成本化有所貢獻的可能性。As described above, according to the structure of the variable capacitor 10D of the fourth embodiment, in addition to the same effects as those of the third embodiment, the following effects can also be obtained. That is, compared with Example 3, for example, the types of dielectric materials applicable to the dielectric 3 can be reduced or unified, which may contribute to further cost reduction.

再者，可變電容器10D並不需要於各串聯電路SC的所有介電體3之對向方向的距離中，以分別不同之方式設定，適當設定亦可。例如，只要是各串聯電路SC中至少2個串聯電路SC的介電體3之對向方向的距離，以成為分別不同之方式設定的構造的話，藉由利用驅動電路D適當選擇性進行開閉控制，可發揮與本實施例4相同的作用效果。Furthermore, the variable capacitor 10D does not need to be set differently in the distance in the opposing direction of all the dielectric bodies 3 in each series circuit SC, and may be set appropriately. For example, as long as the distance in the opposing direction of the dielectric body 3 of at least two series circuits SC in each series circuit SC is set so as to be different from each other, by using the drive circuit D to selectively perform on-off control , the same function and effect as that of Embodiment 4 can be brought into play.

《實施例5》圖11係揭示本實施例5所致之可變電容器10E者，藉由在位於相互隔開所定距離的位置之2個第1電極1之間中介存在第2電極2，可構成更多的串聯電路SC者。再者，在以下的說明中，為了方便說明，將2個第1電極1中一方作為「第1電極1」，將另一方作為「第3電極5」適當進行說明。 "Example 5" Fig. 11 shows the variable capacitor 10E resulting from Embodiment 5. By interposing the second electrode 2 between the two first electrodes 1 located at a predetermined distance from each other, more series can be formed. Circuit SC. In addition, in the following description, for the convenience of description, one of the two first electrodes 1 is referred to as the "first electrode 1" and the other is referred to as the "third electrode 5" for appropriate description.

於該可變電容器10E中，係於挾持第2電極2的前述第1電極1的相反側中，於從該第2電極2隔開所定距離的位置，具備第3電極5。In this variable capacitor 10E, the third electrode 5 is provided at a position separated from the second electrode 2 by a predetermined distance on the opposite side to the first electrode 1 sandwiching the second electrode 2 .

於前述第2電極2及前述第3電極5兩者間，係與第1電極1及第2電極兩者間相同，於該第2電極2的另一端面2b層積設置平板狀的介電體3，對於該介電體3，複數個半導體開關SW(在圖11中描寫為3個半導體開關SW4～SW6)相互隔開距離設置。Between the above-mentioned second electrode 2 and the above-mentioned third electrode 5 is the same as between the first electrode 1 and the second electrode, and the other end surface 2b of the second electrode 2 is laminated with a flat plate-shaped dielectric material. For the dielectric body 3, a plurality of semiconductor switches SW (shown as three semiconductor switches SW4 to SW6 in FIG. 11 ) are provided at a distance from each other.

藉此，於第2電極2及第3電極5的兩者間，係與第1電極1及第2電極2兩者間相同，成為並聯連接複數個串聯電路SC(在圖11中為串聯電路SC4～SC6)的構造。又，於第1電極1及第3電極5的兩者間，係中介存在電性連接該兩者的導體51。Thereby, between the second electrode 2 and the third electrode 5, the same as between the first electrode 1 and the second electrode 2, a plurality of series circuits SC (in FIG. SC4～SC6) structure. In addition, a conductor 51 electrically connecting the first electrode 1 and the third electrode 5 is interposed between the two.

以上，依據如本實施例5的可變電容器10E的構造，除了可發揮與實施例1～4相同的作用效果之外，還可有以下所述效果。亦即，相較於實施例1～4，例如可有效活用第2電極2(在圖11中例如活用第2電極2之一端面2a及另一端面2b)以構成複數個串聯電路SC，故有可對進一步低成本化及小型化有所貢獻的可能性。As described above, according to the structure of the variable capacitor 10E of the fifth embodiment, in addition to the same effects as those of the first to fourth embodiments, the following effects can also be obtained. That is, compared with Embodiments 1 to 4, for example, the second electrode 2 can be effectively utilized (in FIG. 11, for example, one end surface 2a and the other end surface 2b of the second electrode 2 are utilized) to form a plurality of series circuits SC, so There is a possibility of contributing to further cost reduction and miniaturization.

再者，在圖11的可變電容器10E中，第1電極1及第2電極2的兩者間與第2電極2及第3電極5的兩者間，分別構成相同個數(在圖11中分別為3個)的串聯電路SC，但是，該個數可分別適當設定，並不是特別限定者。例如，於第1電極1及第2電極2的兩者間與第2電極2及第3電極5的兩者間，分別具備1個以上的串聯電路SC即可。Furthermore, in the variable capacitor 10E shown in FIG. 11, between the first electrode 1 and the second electrode 2 and between the second electrode 2 and the third electrode 5, the same number of capacitors (in FIG. 11 3) series circuits SC, however, this number can be appropriately set respectively, and is not particularly limited. For example, one or more series circuits SC may be provided between both the first electrode 1 and the second electrode 2 and between the second electrode 2 and the third electrode 5 .

《實施例6》實施例1～5的可變電容器10A～10E的第1電極1(可變電容器10E之狀況係第1電極1及第3電極5)中，並不是限定於如各圖所描寫之一體構造者，例如圖12、圖13所示般，也可適用分離成複數個電極部1 _SW的分離構造。 «Embodiment 6» In the first electrode 1 of the variable capacitors 10A to 10E of the embodiments 1 to 5 (the state of the variable capacitor 10E is the first electrode 1 and the third electrode 5), it is not limited to the one shown in each figure. The described one-piece structure, for example, as shown in FIG. 12 and FIG. 13 , can also be applied to a separate structure that is divided into a plurality of electrode parts 1 _SW .

圖12、圖13係分別揭示本實施例6所致之可變電容器10F、10G者，於第1電極1中，具有複數個電極部1 _SW(在圖12中為也對應串聯電路SC1～SC3的電極部1 _SW1～1 _SW3)的構造。 Fig. 12 and Fig. 13 respectively disclose the variable capacitors 10F and 10G caused by the present embodiment 6. In the first electrode 1, there are a plurality of electrode parts 1 _SW (in Fig. 12, they also correspond to the series circuits SC1-SC3 The structure of the electrode part 1 _SW1 ~ 1 _SW3 ).

可變電容器10F、10D的各電極部1 _SW係分別分離於各串聯電路SC的排列方向而配置(在圖12、圖13中以與半導體開關SW對向之方式配置)，該串聯電路SC的半導體開關SW側藉由連接配線W連接。 The electrode portions 1 _SW of the variable capacitors 10F, 10D are arranged separately from the arrangement direction of the series circuits SC (in FIGS. 12 and 13 , they are arranged to face the semiconductor switches SW). The semiconductor switch SW side is connected by a connecting wire W.

各電極部1 _SW係例如透過配置於可變電容器10F(或10G)的外周側的導體(共通導體等，省略圖示)電性連接的構造亦可。 Each electrode portion 1 _SW may be electrically connected, for example, via a conductor (common conductor, etc., not shown) disposed on the outer peripheral side of the variable capacitor 10F (or 10G).

又，對於各電極部1 _SW之半導體開關SW的連接個數並未特別限定，可適當設定。例如，於圖12的可變電容器10F的電極部1 _SW個別，僅連接1個半導體開關SW，但是，如圖13的可變電容器10G的電極部1 _SW23般，連接複數個半導體開關SW(在圖13中為連接半導體開關SW2、SW3)亦可。亦即，各串聯電路SC的半導體開關SW側係只要連接於各電極部1 _SW之任一即可。 Also, the number of semiconductor switches SW connected to each electrode portion 1 _SW is not particularly limited, and can be appropriately set. For example, only one semiconductor switch SW is connected to the electrode part 1 _SW of the variable capacitor _10F in FIG. In Fig. 13, it is also possible to connect semiconductor switches SW2, SW3). That is, the side of the semiconductor switch SW of each series circuit SC needs only to be connected to any one of the electrode portions 1 _SW .

以上，依據如本實施例6的可變電容器10F、10G的構造，除了可發揮與實施例1～5相同的作用效果之外，還可有以下所述效果。亦即，相較於實施例1～5，例如第1電極1的設計自由度變廣，可容易進行可變電容器10F、10G個別之構成要素的組裝，有可對進一步低成本化及小型化有所貢獻的可能性。As described above, according to the structure of the variable capacitors 10F and 10G of the sixth embodiment, in addition to the same effects as those of the first to fifth embodiments, the following effects can also be obtained. That is, compared with Embodiments 1 to 5, for example, the degree of freedom in the design of the first electrode 1 becomes wider, and the assembly of individual constituent elements of the variable capacitors 10F and 10G can be easily carried out, which can contribute to further cost reduction and miniaturization. Possibility to contribute.

以上，於本發明中，僅對於所記載之具體例詳細說明，但是，該發明所屬技術領域中具有通常知識者當然可理解在本發明的技術思想的範圍中可進行各式各樣的變更，此種變更等當然屬於申請專利範圍。例如，實施例1～6適當組合亦可。In the above, in the present invention, only the described specific examples have been described in detail, but those skilled in the art to which this invention pertains will naturally understand that various changes can be made within the scope of the technical idea of the present invention. Such changes and the like certainly belong to the scope of the patent application. For example, Examples 1 to 6 may be combined appropriately.

1:第1電極 1 _SW,1 _SW1～1 _SW3,1 _SW23:電極部 2:第2電極 2a:一端面 2b:另一端面 3:介電體 3a～3c:表面 4:半導體晶片 4a,4b:元件 5:第3電極 10A～10G:可變電容器 30:共通介電體 31,31a～31c,32,32a,32b:介電體 40:底面 41:連接用基板 51:導體 C:靜電容 c,c1～c4:電容器 D,D1～D3:驅動電路 SC,SC1～SC6:串聯電路 SW,SW1～SW6:半導體開關 IGBT:反向阻斷 W:連接配線 1: 1st electrode 1 _SW , 1 _SW1 to 1 _SW3 , 1 _SW23 : electrode part 2: second electrode 2a: one end face 2b: other end face 3: dielectric body 3a to 3c: surface 4: semiconductor wafer 4a, 4b : Element 5: Third electrodes 10A to 10G: Variable capacitor 30: Common dielectric body 31, 31a to 31c, 32, 32a, 32b: Dielectric body 40: Bottom surface 41: Connection substrate 51: Conductor C: Capacitance c, c1～c4: capacitor D, D1～D3: drive circuit SC, SC1～SC6: series circuit SW, SW1～SW6: semiconductor switch IGBT: reverse blocking W: connection wiring

[圖1]說明實施例1所致之可變電容器10A的概略構造圖((A)係分離立體圖，(B)係從(A)的側面面向第1電極1及第2電極2的兩者間的概略圖)。 [FIG. 1] Schematic diagram illustrating the structure of a variable capacitor 10A according to Example 1 ((A) is an isolated perspective view, and (B) is a side view of (A) facing both the first electrode 1 and the second electrode 2. sketch of the room).

[圖2]用以說明半導體開關SW所具備的半導體晶片4之一例的概略構造圖((A)係半導體開關SW的電路圖，(B)係說明由反向阻斷IGBT所成的元件4a、4b的並聯連接之一例電路圖)。 [FIG. 2] A schematic structural diagram illustrating an example of a semiconductor chip 4 included in the semiconductor switch SW ((A) is a circuit diagram of the semiconductor switch SW, and (B) is an illustration of an element 4a composed of a reverse blocking IGBT, An example circuit diagram of the parallel connection of 4b).

[圖3]說明元件4a、4b的並聯連接之一例的概略構造圖。 [FIG. 3] A schematic structural diagram illustrating an example of parallel connection of elements 4a, 4b.

[圖4]說明串聯電路SC之一例的概略構造圖((A)係相當於從圖1(A)的側面面向第1電極1及第2電極2的兩者間的概略圖，(B)係(A)的等效電路圖)。 [FIG. 4] A schematic structural diagram illustrating an example of the series circuit SC ((A) is a schematic diagram corresponding to the space between the first electrode 1 and the second electrode 2 from the side of FIG. 1(A), (B) System (A) equivalent circuit diagram).

[圖5]可變電容器10A之一部分的串聯電路SC(4個串聯電路SC1~SC4)的等效電路圖。 [ FIG. 5 ] An equivalent circuit diagram of a part of the variable capacitor 10A in series circuit SC (four series circuits SC1 to SC4 ).

[圖6]說明實施例2所致之可變電容器10B的概略構造圖(相當於從圖1(A)的側面面向第1電極1及第2電極2的兩者間的概略圖)。 [FIG. 6] A schematic structural diagram illustrating a variable capacitor 10B according to Example 2 (corresponding to a schematic diagram from the side of FIG. 1(A) facing between the first electrode 1 and the second electrode 2).

[圖7]說明實施例2所致之可變電容器10B的其他例的概略構造圖(相當於從圖1(A)的側面面向第1電極1及第2電極2的兩者間的概略圖)。 [圖8]說明元件4a、4b的並聯連接之一例的概略構造圖。 [圖9]說明實施例3所致之可變電容器10C的概略構造圖(相當於從圖1(A)的側面面向第1電極1及第2電極2的兩者間的概略圖)。 [圖10]說明實施例4所致之可變電容器10D的概略構造圖(相當於從圖1(A)的側面面向第1電極1及第2電極2的兩者間的概略圖)。 [圖11]說明實施例5所致之可變電容器10E的概略構造圖(相當於從圖1(A)的側面面向第1電極1及第2電極2的兩者間的概略圖)。 [圖12]說明實施例6所致之可變電容器10F的概略構造圖(相當於從圖1(A)的側面面向第1電極1及第2電極2的兩者間的概略圖)。 [圖13]說明實施例6所致之可變電容器10G的概略構造圖(相當於從圖1(A)的側面面向第1電極1及第2電極2的兩者間的概略圖)。 [FIG. 7] A schematic structural diagram illustrating another example of the variable capacitor 10B due to Embodiment 2 (corresponding to a schematic diagram from the side surface of FIG. 1(A) facing between the first electrode 1 and the second electrode 2. ). [FIG. 8] A schematic structural diagram illustrating an example of parallel connection of elements 4a, 4b. [FIG. 9] A schematic structural view illustrating a variable capacitor 10C according to Example 3 (corresponding to a schematic view from the side of FIG. 1(A) facing between the first electrode 1 and the second electrode 2). [FIG. 10] A schematic structural diagram illustrating a variable capacitor 10D according to Embodiment 4 (corresponding to a schematic diagram from the side of FIG. 1(A) facing between the first electrode 1 and the second electrode 2). [FIG. 11] A schematic structural view illustrating a variable capacitor 10E according to Embodiment 5 (corresponding to a schematic view from the side of FIG. 1(A) facing between the first electrode 1 and the second electrode 2). [FIG. 12] A schematic structural diagram illustrating a variable capacitor 10F according to Embodiment 6 (corresponding to a schematic diagram from the side of FIG. 1(A) facing between the first electrode 1 and the second electrode 2). [FIG. 13] A schematic structural view illustrating a variable capacitor 10G according to Embodiment 6 (corresponding to a schematic view from the side of FIG. 1(A) facing between the first electrode 1 and the second electrode 2).

1:第1電極 1: 1st electrode

2:第2電極 2: 2nd electrode

2a:一端面 2a: One end face

2b:另一端面 2b: The other end

3:介電體 3: Dielectric body

3a:表面 3a: Surface

4:半導體晶片 4: Semiconductor wafer

10A:可變電容器 10A: variable capacitor

D1~D3:驅動電路 D1~D3: drive circuit

SC1~SC6:串聯電路 SC1~SC6: series circuit

SW1~SW6:半導體開關 SW1~SW6: semiconductor switch

W:連接配線 W: Connection wiring

Claims

一種可變電容器，其特徵為具備：第1電極及第2電極，係位於相互隔開所定距離的位置；及複數個串聯電路，係分別電性連接前述第1電極及前述第2電極的兩者間，且於該兩者間並聯連接；前述各串聯電路，係串聯連接介電體，與具備1個以上對向於前述介電體而設置之半導體晶片的半導體開關；前述各半導體開關的前述半導體晶片，係藉由連接於該各半導體開關的驅動電路，以前述串聯電路的電流分別成為開路狀態或閉路狀態之方式切換控制；於前述各串聯電路中的至少2個，前述各半導體開關為開路狀態時的靜電容，係為分別不同之值；前述半導體開關，係分別具備不同個數的半導體晶片；前述半導體開關的前述半導體晶片，係分別為相同種類，且電性對向面積同等。 A variable capacitor, characterized by comprising: a first electrode and a second electrode located at a predetermined distance from each other; and a plurality of series circuits electrically connected to the first electrode and the second electrode respectively. between the two, and connected in parallel between the two; each of the above-mentioned series circuits is connected in series with a dielectric body, and a semiconductor switch with more than one semiconductor chip disposed opposite to the aforementioned dielectric body; each of the aforementioned semiconductor switches The aforementioned semiconductor chip is switched and controlled in such a way that the current of the aforementioned series circuit becomes an open circuit state or a closed circuit state respectively by a drive circuit connected to the respective semiconductor switches; in at least two of the aforementioned series circuits, each of the aforementioned semiconductor switches The electrostatic capacity when it is in an open circuit state is a different value; the aforementioned semiconductor switches have different numbers of semiconductor chips; the aforementioned semiconductor chips of the aforementioned semiconductor switches are of the same type and have the same electrical opposing area. .

一種可變電容器，其特徵為具備：第1電極及第2電極，係位於相互隔開所定距離的位置；及複數個串聯電路，係分別電性連接前述第1電極及前述第2電極的兩者間，且於該兩者間並聯連接；前述各串聯電路，係串聯連接介電體，與具備1個以上對向於前述介電體而設置之半導體晶片的半導體開關；前述各半導體開關的前述半導體晶片，係藉由連接於該各半導體開關的驅動電路，以前述串聯電路的電流分別成為開路狀態或閉路狀態之方式切換控制；於前述各串聯電路中的至少2個，前述各半導體開關為開路狀態時的靜電容，係為分別不同之值；前述介電體，係該介電體之對向於前述半導體晶片的方向的距離分別不同；前述介電體，係將分別交叉於前述兩者間方向之交叉方向的大小不同之複數個平板狀介電體，層積於該兩者間方向而構成階梯狀：前述各平板狀介電體，係前述兩者間方向的厚度同等。 A variable capacitor, characterized by comprising: a first electrode and a second electrode located at a predetermined distance from each other; and a plurality of series circuits electrically connected to the first electrode and the second electrode respectively. between the two, and connected in parallel between the two; each of the above-mentioned series circuits is connected in series with a dielectric body, and a semiconductor switch with one or more semiconductor chips disposed facing the aforementioned dielectric body; The aforementioned semiconductor chips of the aforementioned semiconductor switches are switched and controlled in such a way that the current of the aforementioned series circuits respectively becomes an open-circuit state or a closed-circuit state by a drive circuit connected to the respective semiconductor switches; , the capacitances of the above-mentioned semiconductor switches when they are in an open state are different values respectively; A plurality of planar dielectrics of different sizes crossing the direction between the two are stacked in the direction between the two to form a ladder shape: each of the above-mentioned planar dielectrics is between the two The thickness in both directions is the same.

如請求項2所記載之可變電容器，其中，於前述各串聯電路中至少2個中，半導體開關係分別具備不同個數的半導體晶片。 In the variable capacitor according to claim 2, in at least two of the aforementioned series circuits, the semiconductor switches are provided with different numbers of semiconductor chips.

如請求項1或2所記載之可變電容器，其中，具備2個前述第1電極，該各第1電極位於相互隔開所定距離的位置；前述第2電極中介於前述各第1電極之間。 The variable capacitor according to claim 1 or 2, wherein two of the first electrodes are provided, and the first electrodes are located at positions separated from each other by a predetermined distance; the second electrodes are interposed between the first electrodes .

如請求項1或2所記載之可變電容器，其中，前述第1電極，係分離成複數個電極部的構造；前述各半導體開關，係連接於前述各電極部之任一。 The variable capacitor according to claim 1 or 2, wherein the first electrode is divided into a plurality of electrode parts; each of the semiconductor switches is connected to any one of the electrode parts.